JP2019117418A - Apparatus for controlling lithography device, program for the apparatus, exposure system, and method of manufacturing device - Google Patents

Abstract

To efficiently set a parameter used in a lithography process.SOLUTION: The apparatus for controlling first and second lithography devices includes: a setting part for setting a common parameter value capable of using by the second lithography device of a plurality of first parameters that the first lithography device uses in a lithography process to the second lithography device; and a calculating part for finding a correction value of the common parameter from a result of the lithography process of the second lithography device using the set common parameter value.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a management technique of a lithographic apparatus used to form a pattern on a substrate, a program for the management technique, an exposure technique using the management technique, an exposure system using the exposure technique, and a device manufacturing technique.

  For example, in a lithography process for manufacturing an electronic device (or micro device) such as a semiconductor device, an apparatus for pattern formation such as an exposure apparatus (projection exposure apparatus), a coater developer, and an etching apparatus (hereinafter referred to as a lithography apparatus) Is used. Among these lithography apparatuses, for example, in an exposure apparatus, it is necessary to set and adjust a large number of parameters for each electronic device to be manufactured and for each layer. For example, in order to match the errors of the projected image due to the optical proximity effect (OPE) among a plurality of exposure apparatuses, for example, the numerical aperture NA of the projection optical system and / or the σ value of the illumination light source (so-called Parameters such as coherence factor) are set and adjusted.

Similarly, SMO (Source and Mask) simultaneously optimizes the reticle pattern and the illumination light source.
Adjustment of parameters such as the σ value of the illumination light source may be performed also when performing the optimization) (see, for example, Patent Document 1).

WO 2011/102109 pamphlet

A plurality of exposure apparatuses are installed in a manufacturing plant of electronic devices. When setting and adjusting a large number of parameters individually for each of the electronic devices to be manufactured and for each layer for each of these exposure apparatuses, the overall time until the parameter adjustment is completed becomes longer Process throughput may be reduced.
Similarly, in a case where a plurality of apparatuses are installed in other lithographic apparatuses, it is necessary to efficiently set parameters in these apparatuses.

According to a first aspect of the present invention, there is provided a management apparatus for managing a first and a second lithographic apparatus, wherein the first of the plurality of parameters used by the first lithographic apparatus in a lithography process From a setting unit for setting the value of the common parameter usable in the second lithographic apparatus in the second lithographic apparatus, and the result of the lithography process of the second lithographic apparatus using the value of the common parameter set in the second lithographic apparatus There is provided a management apparatus of a lithographic apparatus, comprising: a calculation unit for obtaining a correction value of a common parameter.
According to a second aspect, there is provided a management method of a plurality of lithographic apparatus, wherein the first and second lithographic apparatuses can be commonly set among first and second sets of parameters used in the lithography process, respectively. Selecting common parameters, determining the value of the first set of parameters, setting the value of the first set of parameters in the first lithographic apparatus, and the first set of parameters Providing a value of the common parameter in the second lithographic apparatus.

  According to a third aspect, in an exposure method for forming a pattern on a substrate, using the method of managing a lithographic apparatus of the aspect of the present invention, first and second exposures as the first and second lithographic apparatus An exposure method is provided that includes setting values of the first and second sets of parameters in the apparatus, respectively, and exposing a substrate onto a substrate using the first and second exposure apparatuses.

  According to a fourth aspect, a management device for managing a plurality of lithographic apparatus, a first set of parameters that the first lithographic apparatus of the plurality of lithographic apparatus uses in the lithographic process and the plurality of lithography A selection unit for selecting parameters that can be commonly set in the first and second lithography apparatuses from a second set of parameters used by the second lithography apparatus in the lithography process among the apparatuses, and the first set And a setting unit configured to set the value of the common parameter among the parameters of the second lithography apparatus.

According to a fifth aspect, there is provided a program that causes a computer included in the management apparatus to execute the processing of the setting unit included in the management apparatus of the lithography apparatus according to an aspect of the present invention.
According to a sixth aspect, in an exposure system for forming a pattern on a substrate, the management apparatus of the lithographic apparatus of the aspect of the present invention, and first and second exposure apparatuses as the first and second lithographic apparatuses. An exposure system is provided.

  According to a seventh aspect, using the exposure method or the exposure system of the aspect of the present invention, forming a predetermined pattern on a substrate, and processing the surface of the substrate through the predetermined pattern, There is provided a device manufacturing method including:

FIG. 1 is an external view of a lithography system according to an example of an embodiment. FIG. 2 is a cross-sectional view showing a part of a schematic configuration of a mechanical unit of the exposure apparatus in FIG. FIG. 2 is a block diagram showing a control arithmetic system of a master server in FIG. 1 and a control arithmetic system of a first exposure apparatus. It is a flowchart which shows an example of the parameter setting method. It is a figure which shows an example of the screen of the display apparatus at the time of parameter setting. (A) shows an example of measurement result of overlay error, (B) shows an example of shot arrangement after overlay error correction, and (C) shows an example of measurement result of focus error . (A) shows an example of an illumination light source set in an exposure apparatus, (B) shows an illumination light source set in another exposure apparatus, (C) shows an illumination light source after correction, (D) These are figures which show an example of an OPE characteristic. It is a flowchart which shows an example of the manufacturing process of an electronic device.

Hereinafter, an example of a preferred embodiment of the present invention will be described with reference to FIGS. 1 to 7D.
FIG. 1 shows a lithography system DMS according to the present embodiment. In FIG. 1, lithography system DMS includes a plurality of (five in FIG. 1) exposure apparatuses EXA, EXB, EXC, EXD, and EXE, and patterns of various reticles (masks) used in exposure apparatuses EXA to EXE. Mask server MSE that stores pattern information including information on the arrangement of the film, Fourier transform pattern, and film structure of the pattern (three-dimensional structure information) in association with ID information (identification information) of each reticle, and exposure apparatus EXA ̃ The master server 6 is provided to set various parameters in the EXE. Furthermore, the lithography system DMS includes an overlay error measurement device MEA for inspecting a formed pattern, a focus error measurement device (not shown) for measuring a focus error (defocus amount) of the formed pattern, and Transmission and reception of information between multiple inspection devices such as a scanning electron microscope (SEM) (not shown) that measures the line width of a pattern, etc., and exposure devices EXA to EXE, mask server MSE, master server 6, and inspection devices And a dedicated higher-speed communication line 13 for transmitting and receiving pattern information and the like between the mask server MSE and the master server 6. .

  The exposure apparatuses EXA, EXB, EXC, EXD, and EXE receive the parameter information supplied from the master server 6 via the communication line 12 and transmit / receive various control information, respectively. The communication units 10A, 10B, 10C, 10D , 10E. The exposure apparatuses EXA to EXE, the master server 6, and the communication line 12 can be regarded as an exposure system. Further, the master server 6 and the mask server MSE are provided with input / output ports (hereinafter referred to as IO ports) 8A and 8B for transmitting and receiving information through the communication lines 12 and 13, respectively. The I / O port 11 is provided to transmit and receive information via the T.12.

  Furthermore, the lithography system DMS transmits and receives information in a wider range than the communication line 12, for example, a communication line (not shown) such as a WAN (Wide Area Network), and a coater / developer (not shown) connected to this communication line. And a host computer that transmits and receives process control information etc. between exposure apparatus EXA to EXE, mask server MSE, master server 6, overlay error measurement apparatus MEA, and coater / developer via this communication line Not shown). As an example, lithography system DMS is installed in a manufacturing plant for manufacturing semiconductor devices and the like, and a plurality of exposure apparatuses EXA to EXE are arranged along a plurality of manufacturing lines in the manufacturing plant.

  2 shows a schematic configuration of a mechanical part of the exposure apparatus EXA in FIG. 1, and FIG. 3 shows a control arithmetic system of the exposure apparatus EXA and a control arithmetic system of the master server 6 in FIG. In FIG. 2, the exposure apparatus EXA is a scanning exposure type projection exposure apparatus, which comprises a scanning stepper (scanner) as an example. The exposure apparatus EXA includes a projection optical system PL which projects an image of a pattern of a reticle (mask) onto the surface of a semiconductor wafer (hereinafter simply referred to as a wafer) coated with a resist (photosensitive material). Hereinafter, in FIG. 2, the Z axis is parallel to the optical axis AX of the projection optical system PL, and the reticle and the wafer (photosensitive substrate) in a plane orthogonal to this (in the embodiment, a plane substantially parallel to the horizontal plane) Will be described taking the Y axis along the direction in which Y. and Y. are relative scanned, and the X axis along the direction orthogonal to the Z axis and the Y axis. The rotational directions around axes parallel to the X axis, Y axis, and Z axis will be described as θx, θy, and θz directions.

  The exposure apparatus EXA includes an exposure light source (not shown) that generates illumination light (exposure light) IL for exposure, an illumination optical system ILS that illuminates the reticle RA using the illumination light IL from the light source, and a reticle And a reticle stage RST that moves while holding RA. Furthermore, exposure apparatus EXA includes projection optical system PL that exposes the surface of wafer W (hereinafter also referred to as a wafer surface) with illumination light IL emitted from reticle RA, and wafer stage WST that moves while holding wafer W. A control system (see FIG. 3) including a main control unit 40 for controlling the operation of the entire apparatus and an exposure control unit 14 for controlling the exposure operation is provided. The main control unit 40 and the exposure control unit 14 are, for example, functions on software of a computer. And, it is controlled by a program for operating the master server 6 described later.

In FIG. 2, ArF excimer laser light (wavelength: 193 nm) is used as the illumination light IL as an example. Note that KrF excimer laser light (wavelength 248 nm) or a harmonic of a solid-state laser (semiconductor laser or the like) can also be used as illumination light for exposure. The illumination optical system ILS is a pupil plane (hereinafter referred to as an illumination pupil plane) using illumination light IL supplied from a light source (not shown) as disclosed in, for example, US Patent Application Publication No. 2003/0025890. And a light intensity distribution forming unit such as a spatial light modulator (SLM) that forms a variable light intensity distribution (hereinafter referred to as an illumination light source) such as circular, ring-like, or multipolar An optical system control unit 37 (see FIG. 3) for controlling the shape of the illumination light source by driving the intensity distribution formation unit, and the illumination light IL from the illumination light source on the pattern surface of the reticle RA (hereinafter also referred to as reticle surface) The condenser optical system illuminates a slit-like illumination area IAR elongated in the X direction, and a variable field stop etc. defining the shape of the illumination area IAR. By using the spatial light modulator as the light intensity distribution forming unit, the basic shape of the illumination light source can be easily set to a circular, a plurality of poles (such as four poles), an annular zone, or any other arbitrary shape. This makes it possible to easily apply SMO (Source and Mask Optimization) that optimizes the shape of the illumination light source in accordance with the reticle to be exposed. Furthermore, by using the spatial light modulator, adjustment of the σ value (coherence factor) of the illumination light source, and the annular ratio (outer diameter and the like) of the annular (or multipolar) illumination light source in the case of annular illumination Adjustment of the ratio to the inner diameter can be easily performed.

  Further, in the illumination optical system ILS, an integrator sensor 36 (see FIG. 3) including a photoelectric sensor for detecting the light amount of light branched from the illumination light IL is provided. It is supplied. The exposure control unit 14 can monitor the integrated irradiation energy passing through the projection optical system PL by integrating the measured values. In addition, it is also possible to use exposure continuation time etc. as alternative information of accumulated irradiation energy.

  The reticle RA is held on the top surface of the reticle stage RST by vacuum suction or the like, and a device pattern RPA such as a circuit pattern and an alignment mark (not shown) are formed on the reticle surface. Reticle stage RST can be finely driven in the XY plane by reticle stage drive system 31 of FIG. 3 including, for example, a linear motor, and can be driven at a designated scanning speed in the scanning direction (Y direction). When performing exposure of different layers, the reticle stage RST is provided with the reticle RB on which another device pattern RPB is formed.

  The positional information (including the X direction, the Y direction position, and the rotational angle in the θz direction) in the movement plane of reticle stage RST is moved mirror 22 (or mirror-finished) by reticle interferometer 24 formed of a laser interferometer. For example, it is always detected at a resolution of about 0.5 to 0.1 nm via the stage end face). The measurement value of the reticle interferometer 24 is sent to the exposure control unit 14 of FIG. The exposure control unit 14 controls the reticle stage drive system 31 based on the measurement value to control the position and velocity of the reticle stage RST.

  The projection optical system PL is, for example, both-side telecentric and has a predetermined projection magnification β (for example, a reduction magnification such as 1⁄4). An aperture stop AS is provided at or near a pupil plane (hereinafter referred to as a projection pupil plane) PLP of the projection optical system PL. An optical system control unit 37 (see FIG. 3) drives the aperture stop AS to control the numerical aperture NA of the projection optical system PL. The projection pupil plane PLP is optically conjugate to the pupil plane (illumination pupil plane) of the illumination optical system ILS, and the projection pupil plane PLP is optical with respect to the pattern plane of the reticle RA (object plane of the projection optical system PL) It is also a Fourier transform plane. The projection optical system PL may be of a type that forms an intermediate image. Furthermore, the projection optical system PL may be a dioptric system or a catadioptric system. When the illumination area IAR of the pattern surface of the reticle RA is illuminated by the illumination light IL from the illumination optical system ILS, the illumination light IL passing through the reticle RA causes the device pattern in the illumination area IAR to pass through the projection optical system PL. An image is formed on an exposure area IA (an area optically conjugate with the illumination area IAR) of one shot area of the wafer W. The wafer W includes, for example, a disk-like base made of semiconductor such as silicon and having a diameter of about 200 to 450 mm and coated with a resist (photosensitive material) to a thickness of about several tens to 200 nm.

Further, in the exposure apparatus EXA, in order to perform the exposure to which the liquid immersion method is applied, the local liquid immersion so as to surround the lower end portion of the optical element on the most image plane side (wafer W side) constituting the projection optical system PL. A nozzle unit 28 is provided which constitutes a part of the apparatus and which supplies and recovers the exposure liquid Lq (for example, pure water) in the liquid immersion area including the exposure area IA. The nozzle unit 28 is connected to the liquid supply device 33 and the liquid recovery device 34 (see FIG. 3) via a pipe (not shown) for supplying the liquid Lq. When the immersion type exposure apparatus is not used, the above-mentioned local liquid immersion apparatus may not be provided.

Further, the projection optical system PL is provided with an imaging characteristic correction device 30 for controlling the attitudes of a plurality of predetermined lenses inside to correct imaging characteristics represented by wavefront aberration such as distortion and spherical aberration. There is. Such an imaging property correction device is disclosed, for example, in US Patent Application Publication No. 2006/244940.
Furthermore, the exposure apparatus EXA is a spatial image measurement system (not shown) that measures the position of the image by the projection optical system PL of the alignment mark of the reticle RA, and an image processing method (FIA) that measures the position of the alignment mark of the wafer W And an oblique-incidence multipoint autofocus sensor (hereinafter referred to as an AF sensor) 35 (see FIG. 3) for measuring Z positions of a plurality of locations on the surface of the wafer W. ing. Measurement information of alignment system AL or the like is supplied to exposure control unit 14. Further, exposure apparatus EXA includes a reticle loader system (not shown) and a wafer loader system (not shown).

  Further, wafer stage WST is supported in a non-contact manner on the upper surface parallel to the XY plane of base board WB via a plurality of air pads (not shown) (not shown). Wafer stage WST can be driven in the X and Y directions, for example, by a stage drive system 32 (see FIG. 3) including a planar motor or two sets of linear motors orthogonal to each other. Wafer stage WST includes a stage main body driven in the X and Y directions, a mechanism for adjusting the rotational angle of the stage main body in the θz direction, and a wafer holder provided on the stage main body for holding wafer W by vacuum suction or the like. The wafer processing apparatus includes a WH, and a Z stage mechanism (not shown) for controlling the Z position of the wafer W, and the tilt angles in the θx and θy directions.

  In order to measure positional information of wafer stage WST, a wafer interferometer 26 formed of a laser interferometer is disposed. The positional information (including the X direction, the Y direction position, and the rotational angle in the θz direction) within the movement plane of wafer stage WST is constantly detected by wafer interferometer 26 with a resolution of, for example, about 0.5 to 0.1 nm. The measured value is sent to the exposure control unit 14. The exposure control unit 14 controls the stage drive system 32 based on the measurement value to control the position and speed of the wafer stage WST. In place of the wafer interferometer 26, an encoder type position measurement system in which a diffraction grating and a detector are combined may be used.

  In addition, a characteristic measurement device 20 capable of measuring the light intensity distribution (light quantity distribution) of the projection pupil plane PLP is incorporated in the wafer stage WST. Characteristic measuring apparatus 20 has, as an example, a flat glass substrate 21A having a surface at the same height as the surface of wafer W and having pinholes 21Aa formed on the surface, and illumination light passing through pinholes 21Aa. It has a light receiving optical system 21B for collecting light, a CCD or CMOS type two-dimensional imaging element 21C for receiving illumination light collected by the light receiving optical system 21B, and a case 21D for holding these members. With the pinhole 21Aa moved into the exposure area IA, the light receiving surface of the imaging device 21C is optically conjugate to the projection pupil surface PLP (or exit pupil) by the light receiving optical system 21B. The light intensity distribution (image) in the projection pupil plane PLP (or the entrance pupil or the exit pupil) can be measured by performing image processing on the detection signal of the imaging device 21C in a computing unit (not shown). Furthermore, a predetermined aberration of projection optical system PL is measured by processing an image obtained when, for example, a test reticle (not shown) on which a predetermined plurality of diffraction grating patterns are formed is arranged instead of reticle RA. It is also possible. Information on the measured light intensity distribution or aberration is supplied to the exposure control unit 14.

  Further, the exposure apparatus EXA communicates with the storage unit 38 which stores values of a plurality of parameters supplied from the master server 6, measured values of the alignment system AL and the AF sensor 35, exposure data files for the exposure apparatus EXA, etc. An input / output control unit (hereinafter referred to as an IO control unit) which controls input / output of information between the IO port 42 connected to the line 12 and the master server 6 and the host computer (not shown) And a parameter input unit 43 to which parameters supplied from the master server 6 through the communication line 12 and the IO port 42 are input. A display device 18E and an input device 16E are connected to the main control unit 40, and the operator can input various commands and the like to the main control unit 40.

A communication unit 10A is configured of the IO port 10A and the parameter input unit 43. A plurality of parameters supplied from the master server 6 to the parameter input unit 43 as described later are stored in the storage unit 38 via the main control unit 40 and the exposure control unit 14. Further, parameters corresponding to the parameters input to the parameter input unit 43 are set in the imaging characteristic correction device 30, the optical system control unit 37, and the like.
The wavelength (exposure wavelength) of the illumination light IL of the exposure apparatus EXA, the arrangement information of the optical members constituting the illumination optical system ILS and the projection optical system PL, the resolution of the projection optical system PL, the projection optical system measured by the characteristic measurement device 20 Remaining wavefront aberration of PL, overlay error of exposure apparatus EXA measured by overlay error measurement apparatus MEA, measurement value of CD (critical dimension) indicating almost minimum line width of pattern which can be projected by exposure apparatus EXA Line width measured by scanning electron microscope (SEM), wavefront aberration of projection optical system PL correctable by imaging characteristic correction device 30, positioning accuracy of reticle stage RST and wafer stage WST, alignment accuracy of alignment system AL Configuration of exposure apparatus including information such as, etc., and types and initial values of parameters that need to be set The information on the exposure characteristics (hereinafter referred to as the configuration information of the exposure apparatus) is stored in the storage unit 38, and is made to correspond to the ID information of the exposure apparatus EXA in the first storage unit 51 (see FIG. 3) of the master server 6. It is memorized. The values measured by the characteristic measurement device 20 and the overlay error measurement device MEA in the configuration information of the exposure apparatus can also be referred to as measurement data.

  The configurations of the other exposure apparatuses EXB to EXE shown in FIG. 1 are the same as those of the exposure apparatus EXA, and the configuration information of the exposure apparatuses EXB to EXE also corresponds to the ID information of the exposure apparatuses EXA to EXE. It is stored in the unit 51 (see FIG. 3). The configuration information of the exposure apparatus may be supplied to the master server 6 via the communication line 12 as necessary. The exposure apparatuses EXA to EXE may be different in model from one another. As an example, the exposure apparatuses EXA and EXB may be immersion type, and the exposure apparatus EXC may be dry type. Furthermore, the exposure apparatus EXD may be a batch exposure type stepper. Further, the wavelength of exposure light is not limited either, and for example, an exposure apparatus using ArF excimer laser light, KrF excimer laser light, or i-line may be combined. Further, an EUV exposure apparatus using extreme ultraviolet light may be combined.

  At the time of exposure of wafer W by exposure apparatus EXA, alignment of reticle RA and wafer W is performed as a basic operation, and then wafer W is moved by movement (step movement) of wafer stage WST in the X and Y directions. The shot area to be exposed moves in front of the exposure area of the projection optical system PL. Then, under the control of the exposure control unit 14, the reticle stage RST and the wafer stage WST are synchronously driven while exposing the relevant shot area of the wafer W with the image by the projection optical system PL of a part of the pattern of the reticle R. By scanning the reticle R and the wafer W with respect to the projection optical system PL, for example, in the Y direction with the projection magnification as the speed ratio, the image of the pattern of the reticle R is scan-exposed on the entire surface of the shot area. By repeating the step movement and the scanning exposure in this manner, the image of the pattern of the reticle RA is sequentially exposed to a plurality of shot areas of the wafer W by the step-and-scan method.

  At the time of such exposure, it is necessary to set values of various parameters in the exposure apparatus EXA in advance according to the pattern of the reticle RA and the configuration of the exposure apparatus EXA. Further, it is necessary to set values of various parameters for the other exposure apparatuses EXB to EXE in accordance with the pattern of the reticle and the configuration of the exposure apparatus. If such parameters are set individually for each exposure apparatus, the throughput of the exposure process may be reduced. In the present embodiment, the master server 6 is provided to efficiently set the values of those parameters.

  The master server 6 is a computer provided with a plurality of CPUs (central processing units) or MPUs (micro processing units), a semiconductor memory, and a large capacity storage device such as a hard disk drive as shown in FIG. 3 as an example. is there. Further, the master server 6 reads data and programs recorded on a recording medium 53 such as a digital versatile disk (DVD) or a flash memory, and an IO port 8A for transmitting and receiving to and from the communication lines 12 and 13. A recording / reproducing unit 52 capable of writing data and the like to the recording medium 53, a first storage unit 51 and a second storage unit 61 which are part of a storage device, and a parameter information storage unit which is a part of the storage device 55, a display device 18 for displaying various information, an input device 16 of, for example, a touch panel type for the operator to input control information etc., and various functions on software of a computer described below There is. The parameter information storage unit 55 stores, for example, actual values or parameter storage units 56A to 56E that store initial values and corrected values of each set of parameters when the reticle designated by the exposure apparatus EXA to EXE is used. And an offset storage unit 56F for storing, for example, an offset of a value between predetermined parameters (for example, parameters commonly set by a plurality of exposure apparatuses) of each set of exposure apparatuses EXA to EXE obtained by calculation.

  The functions on the software of the master server 6 include a main control unit 50 (for example, an operating system) that centrally controls the overall operation of the master server 6, and an IO control for controlling the IO port 8A by the main control unit 50. There is a unit 54 and a parameter selection determination unit 58. Hereinafter, for example, when the exposure apparatuses EXA, EXB, EXC use the i, j, k th reticles (where i, j, k are integers and may be the same number, for example), a set of setting is required. The parameters are referred to as (A-i) set, (B-j) set, and (C-k) set parameters. Among these parameters, the parameter selection determining unit 58 sets the parameter selection unit 62 for selecting the type of a predetermined parameter to be set commonly to a plurality of exposure apparatuses, and a certain exposure apparatus (for example, the exposure apparatus EXA) (A -I) A first parameter determination unit 63 which determines the values of the set of parameters, a first correction unit 65A which corrects the values of the set of parameters according to the instruction of the operator, and another exposure apparatus (for example, A second parameter determination unit 64 determines the values of the (B−j) sets and the (C−k) sets of parameters to be set in the exposure apparatus EXB, EXC, and one of these sets of parameters in accordance with an instruction from the operator. The second correction unit 65B for correcting the value and the value of the determined parameter are sent to the main control unit 40 of the corresponding exposure apparatus, and the value of the determined parameter (hereinafter referred to as P) And a sub control unit 60 to be set to the corresponding exposure apparatus. The determined parameter value P is also stored in the corresponding parameter storage units 56A to 56E.

The sub control unit 60 reads out the types and initial values of the parameters that need to be set in each exposure apparatus from the configuration information of each exposure apparatus stored in the first storage unit 51, and the parameters corresponding to the initial values of the read parameters. It is stored in the storage units 56A to 56E. In addition, as an example, sub control unit 60 offset stores offsets between initial values of predetermined parameters (for example, parameters commonly set by a plurality of exposure apparatuses) of each set of exposure apparatuses EXA to EXE as needed. It makes part 56F memorize. The second storage unit 61 is used by the sub control unit 60 and the parameter selection determination unit 58 to temporarily store data. For example, the main control unit 50 reads a program stored in the recording medium 53 and stores the read program in the first storage unit 51. It is realized by executing.

Next, an example of the (Ai) set, the (Bj) set, and the (Ck) set set to the exposure apparatuses EXA to EXC will be described with reference to FIG. FIG. 5 shows an example of the content displayed on the display unit 18 when the operator is setting parameters using the master server 6. In FIG. 5, each set of parameters includes, by way of example, a group of parameters PIU related to setting of an illumination system etc., a group of parameters PLC for reducing aberration of the projection optical system, and a group for reducing overlay error It includes a parameter POV and a group of parameters PFO for reducing focus error (defocus amount) (such as an offset of a focus position in each shot and each shot of a wafer). The parameter PIU is a parameter POP (eg, a σ value of an illumination system (coherence factor), an annular ratio at annular illumination, etc.) for matching OPE (optical proximity effect :) characteristics among a plurality of exposure apparatuses, SMO (Source and Mask) to simultaneously optimize the pattern of the laser and the reticle and the illumination light source
Parameter PSO (for example, the shape of the illumination light source) used when performing optimization. Hereinafter, the parameter POP is also referred to as a subset a, and the parameter PSO is also referred to as a subset b of parameters.

  Further, the parameter PLC is a parameter PLB including a coefficient of a Zernike (ZERNIKE) polynomial (hereinafter referred to as a Zernike coefficient) Zan (n = 1, 2,...) Defining the wavefront aberration of the projection optical system, and irradiation of exposure light. It has parameters PTA (a time constant of the aberration fluctuation, an aberration fluctuation amount at the time of saturation, and the like) which define the aberration (so-called thermal aberration) of the projection optical system which fluctuates. Hereinafter, the parameter PLB is also referred to as a subset c of parameters, and the parameter PTA is also referred to as a subset d of parameters. The parameter POV is a parameter PSG (offset of exposure position, tilt angle, rotation, magnification of projected image, distortion, etc.) indicating overlay error of device pattern for each shot of wafer, and overlay error due to thermal expansion of reticle. And a parameter PRE (the coefficient of thermal expansion of the reticle, the transmittance, etc.). Hereinafter, the parameter PSG is also referred to as a subset e of parameters, and the parameter PRE is also referred to as a subset f of parameters. The (A−i) set, the (B−j) set, and the (C−k) set of parameters include at least a part of the parameters PIU, PLC, POV, and PFO (subsets a to f and parameter PFO), respectively. However, normally, the values finally set as those parameters are different from one another, except in particular when limited to equal values.

  Hereinafter, in the lithography system DMS of the present embodiment, an example of a method of setting parameters for the exposure apparatuses EXA to EXC using the master server 6 will be described with reference to the flowchart of FIG. In the following, as an example, first, the (Ai) set of parameters of the exposure apparatus EXA is set, and at least a part of the set parameters is used to set (Bj) of the other exposure apparatuses EXB and EXC, Description will be made assuming that (C−k) sets of parameters are set.

  First, in step 102 of FIG. 4, parameters to be set commonly to the plurality of exposure apparatuses EXA to EXE are selected. Therefore, the sub control unit 60 first sets the parameter storage units 56A, 56B, and 56C of the parameter information storage unit 55 to initial values of (A−i), (B−j), and (C−k) parameters. Set Then, the parameter selection unit 62 of the master server 6 causes the display device 18 to perform the display shown in FIG. 5 via the sub control unit 60 and the like. At this stage, information (represented by hatching in FIG. 5) indicating that the blocks A1, A5, etc. in FIG. 5 have been selected is not displayed. Furthermore, the parameter selection unit 62 displays (not shown) so as to select a parameter to be set commonly to the operator.

In response to this, the operator performs, as an example, common setting of subset a in exposure apparatuses EXA, EXC, common setting of subset e in exposure apparatuses EXA, EXB, EXC, and parameter PFO in exposure apparatuses EXA, EXB. The blocks A1, B5, C1 and the like indicating the parameters of the parts to be commonly set using the touch panel are selected so that the setting of the above is commonly performed. By this, the parameter selection unit 62 causes the second storage unit 61 to store the information of the selected parameter. In the parameter selection unit 62, for example, a predetermined method (for example, a method of commonly setting subsets a and e for exposure apparatuses of the same model, and setting only a subset a of exposure apparatuses of different models) The parameter to be set commonly may be selected. In addition, since the parameters to be commonly set in units of the subsets a to f and / or the parameter PFO including a plurality of parameters are selected here, setting efficiency can be increased. Note that only one parameter may be selected as a parameter to be set in common.

  In the next step 104, the sub control unit 60 obtains an offset between initial values of parameters between the exposure apparatuses EXA to EXC which are commonly set with respect to the subsets a and e which are commonly set, and the parameter PFO. It is stored in the offset storage unit 56F. In addition, step 104 can be omitted when correction of parameters to be set commonly is not performed. Further, in step 106, parameters for the exposure apparatus EXA (first exposure apparatus) are set. Therefore, the first parameter determination unit 63 reads the initial value of the (A-i) set of parameters from the parameter storage unit 56A, and the information of the initial value is transmitted to the main control system 40 of the exposure apparatus EXA through the sub control unit 60. The main control system 40 sets initial values of the parameters in the corresponding devices.

  Thereafter, when correction of parameters is performed, exposure is performed using the reticle on which a predetermined test pattern is formed using the exposure apparatus EXA (step 108), and the pattern after development is, for example, the overlay error measurement apparatus MEA or the like. The overlay error and the defocus amount are determined, for example (step 110). The information of the measurement value of the overlay error and the defocus amount is stored in the first storage unit 51 of the master server 6 via the communication line 12.

  Then, in step 112, the correction unit 65A corrects the corresponding parameter using the measurement value of the overlay error and the defocus amount. For example, as shown in FIG. 6A, the overlay error is a plurality of test patterns EPi exposed on the ith shot SAi (i = 1 to N: N is an integer representing the total number of shots) of the wafer W. It is obtained by measuring the position information of the mark MPS for overlay error measurement (for example, the amount of positional deviation between the mark of the previous layer and the mark exposed this time). From the overlay error, the correction unit 65A corrects the correction value of subset e (the offset of the exposure position for each shot SAi in the X direction, Y direction, distortion of the projection optical system, etc.) which is a parameter for overlay error correction. Ask. By performing exposure using this corrected subset e, as shown in FIG. 6B, the device pattern GPi can be superimposed and exposed on each shot SAi with high accuracy.

Similarly, as shown in FIG. 6C, the defocus amount δF for each shot is the position information (eg, non-focusing of a plurality of focus position measuring marks MPF of the test pattern FPi exposed to the shot SAi of the wafer W). It can be determined by measuring the spacing of a plurality of marks exposed in a telecentric state. From the defocus amount δF, the correction unit 65A calculates a correction value of a parameter PFO (for example, an offset of a focus position in a shot for each shot) for reducing a focus error. The correction values of the subset e and the parameter PFO obtained in this manner are sent to the first parameter determination unit 63, and the first parameter determination unit 63 uses the correction values to set the (Ai) set for the exposure apparatus EXA. The corrected parameters are stored in the parameter storage unit 56A, and transmitted to the main control system 40 of the exposure apparatus EXA via the sub control unit 60. Thus, the parameters after correction are set in the exposure apparatus EXA. In the display screen of FIG. 5, the display that has been set is performed in the part of the (A−i) set of parameters. The operations of steps 108 and 110 may be performed in the previous step of step 102.

  In the next step 114, whether or not the second parameter determination unit 64 corrects parameters (for example, subsets a and e and parameter PFO) to be set commonly for the exposure apparatuses EXB and EXC, for confirmation not shown. The operator is inquired using a method such as displaying an alarm or warning. When correcting a parameter, the operator selects, for example, a display (represented by the letter CR in FIG. 5) indicating correction within the block of the corresponding parameter in the display screen. Thereafter, the operator selects a display (not shown) indicating transition to the next process. In response to this, in step 116, correction unit 65B corrects subset a in the (Ai) set of parameters using the offset between exposure apparatuses EXA and EXC stored in offset storage unit 56F. The corrected result is written to the part of the subset a in the parameter storage unit 56C via the second parameter determination unit 64.

Similarly, the correction unit 65B uses the offset e between the exposure apparatuses EXA and EXB and the exposure apparatuses EXA and EXC stored in the offset storage unit 56F, for example, for the subset e in the (Ai) set of parameters. And corrects the corrected result, and writes the corrected result to the portion of subset e in the parameter storage units 56B and 56C via the second parameter determination unit 64, respectively. Furthermore, the correction unit 65B corrects the (A−i) set of parameter PFO using, for example, the offset between the exposure apparatuses EXA and EXB stored in the offset storage unit 56F, and corrects the correction result as a second parameter It writes in the part of the parameter PFO in the parameter storage unit 56B via the determination unit 64. Now, among the parameters of the (Ai) set of the exposure apparatus EXA, the parameters (subsets a and e and the parameter PFO) commonly used for the other exposure apparatuses are corrected.
The correction may be performed using the result of performing the exposure operation or the exposure simulation using the determined parameter P, instead of using the offset. For example, if it is determined that the main control unit 50 (master server 6) does not fall within the allowable range set in the exposure apparatus EXB with the determined parameter P as it is, a warning to that effect may be issued. . As a method of warning, for example, an alarm may be displayed on the screen of the display device 18, or an alarm such as an alarm may be sounded, and it is not particularly limited.

  Here, an example of the effect of the parameter correction will be described. For example, among the (A−i) set of parameters, as the parameter indicating the illumination light source is indicated by the illumination pupil 45 of FIG. It is assumed that four-pole illumination 44A using four illumination light sources 44Aa arranged around the optical axis AXI, and the initial value of the annular ratio in the subset a is σ21 / σ11. At this time, the annular ratio in the case of FIG. 7A is obtained in advance as the annular ratio in the parameters for the exposure apparatus EXC as shown by the four-pole illumination 44B of FIG. 7B as an example. It becomes σ22 / σ12 corrected by the offset. If the OPE characteristic (curve A1) shown in FIG. 7D of the exposure apparatus EXC is adjusted based on the annular ratio to match the characteristic (curve A2) as a reference within a predetermined allowable range, the adjusted OPP characteristic is obtained. The annular ratio is σ23 / σ13 as shown by the four-pole illumination 44C in FIG. 7C as an example. At this time, since the annular ratio in FIG. 7B is finally close to the annular ratio set in the exposure apparatus EXC, the adjustment time in the exposure apparatus EXC can be shortened.

Returning to the description of the flowchart of FIG. 4, the operation then proceeds to step 118. If the parameters used in common are not corrected, the operation proceeds from step 114 to step 118.
In step 118, the second parameter determination unit 64 performs display (not shown) so as to designate a parameter to be commonly set on the display screen of FIG. In response to this, the operator displays, for example, a block A5 indicating a subset e of the (Ai) set of parameters.
If an operation (drag and drop, cut and paste, etc.) is performed to select using U and move this block A5 to block B5 indicating a subset e of the (B−j) set of parameters, the second parameter is determined The unit 64 copies the subset e of the (A-i) set of parameters to the portion of the subset e of the (B-j) set of parameters of the parameter storage unit 56B. Further, the copied subset e is transmitted to the main control system 40 of the exposure apparatus EXB (second exposure apparatus) via the sub control unit 60. Thus, the parameters of the subset e for the exposure apparatus EXB are set.
If it is found that the value of the copied parameter does not fall within the allowable range of the value of the parameter set in the exposure apparatus EBX at this time, the master server 6 causes the screen of the display device 18 to You may indicate that copying is not possible. For example, the main control unit 50 determines whether the value of the parameter of the subset e instructed to be copied falls within the tolerance of the subset e set in the exposure apparatus EXB, and if it does not enter, the reason why copying can not be performed In addition, the candidate of the value of the parameter e that is closest to the above-mentioned allowable range may be displayed on the display unit 18 to notify the operator.

Furthermore, the second parameter determination unit 64 performs the operation of moving the selection display CU from the block A7 to the block B7 so that the (A−i) set of parameters PFO can be transferred to the (B− of the parameter storage unit 56B). j) Copy to the parameter PFO of the set of parameters. Then, the copied parameter PFO is transmitted to the main control system 40 of the exposure apparatus EXB (second exposure apparatus) via the sub control unit 60. Thereby, the parameter PFO of the exposure apparatus EXA is set as the parameter PFO for the exposure apparatus EXB. Similarly, subsets a and e of exposure apparatus EXA are set as subsets a and e for exposure apparatus EXC, respectively, as the operator moves selection display CU from blocks A1 and A5 to blocks C1 and C5, respectively. Be done.
The method of copying the parameters is not particularly limited. In the present embodiment, the case where the operator operates on the display screen of the display device 18 has been described, but copying may be performed via a storage medium such as a hard disk, an optical disk, or a magnetic tape. Further, when the exposure apparatus EXB is activated, copying of parameters may be automatically performed via the communication line 12 along with the activation operation.

  After that, when setting other parameters of exposure apparatus EXB (parameters other than subset e and parameter PFO), in step 120, the second parameter determination unit 64 sets the initial value of the setting target parameter in the parameter storage unit 56B. It is transmitted to the main control system 40 of the exposure apparatus EXB via the sub control unit 60. Similarly, when setting other parameters (parameters other than subsets a and e) of exposure apparatus EXC, second parameter determination unit 64 sets the initial value of the parameter to be set in parameter storage unit 56C to sub-control unit 60. To the main control system 40 of the exposure apparatus EXC.

  Then, in step 122, the exposure apparatus EXB performs, for example, test pattern exposure using the set (B-j) set of parameters, measures the pattern after development (step 124), and displays the measurement result Display on screen 18 Then, for example, when the measurement result does not fall within the allowable range, the effect may be displayed on the screen so that the operator can select the correspondence. For example, when the operator selects to correct the parameter so that the measurement result falls within the allowable range, the master server 6 derives the result in the case of correcting the parameter by exposure simulation, calculation, etc. It may be displayed. Then, when the corrected result is displayed, when the operator performs an operation of accepting the correction on the master server 6, the value of the corrected parameter is set in the exposure apparatus EXB. By correcting the parameters in this manner (step 126), the exposure apparatus EXB can efficiently set the parameters. Similarly, correction and setting of parameters can be efficiently performed in the exposure apparatus EXC.

  As described above, the master server 6 of the present embodiment is used to set parameters used in the lithography process for forming a pattern (such as a resist pattern) on the wafer W (substrate). The master server 6 is a management apparatus of the exposure apparatus EXA, EXB (lithography apparatus), and each of the first and second exposure apparatuses EXA, EXB uses in the lithography process (Ai) (a first set) A parameter selection unit 62 (selection unit) for selecting a subset e and a parameter PFO (common parameter) which can be commonly set among the parameters of (set) and (B−j) set (second set); A first parameter determination unit 63 (first parameter setting unit) that determines the values of the set of parameters and sets them in the exposure apparatus EXA, and the value of the common parameter in the set of (A-i) And a second parameter setting unit 64 (second parameter setting unit) to be set to EXB.

  In addition, the method of managing the exposure apparatus (lithography apparatus) according to the present embodiment is commonly set among the (A−i) set and the (B−j) set of parameters used in the lithography process by the exposure apparatuses EXA and EXB, respectively. Step 102 of selecting possible subset e and parameter PFO (common parameter), Step 106 of determining the values of the (A-i) set of parameters and setting them in the exposure apparatus EXA, and (A-i) of the set of parameters And step 118 of setting the value of the common parameter in the exposure apparatus EXB.

According to the present embodiment, since a part of the parameters set by the exposure apparatus EXA are commonly set in the exposure apparatus EXB, the parameters can be efficiently set for the plurality of exposure apparatuses EXA and EXB. .
Further, the lithography system DMS (exposure system) of the present embodiment is a lithography system for forming a pattern (including a latent image pattern or a resist pattern) on a wafer W (substrate), and includes a master server 6 (parameter setting device) Based on values of a plurality of sets of parameters set by the master server 6, exposure apparatuses EXA and EXB (lithography apparatuses) for forming the pattern on the wafer W are provided.

Further, in the exposure method of the present embodiment, a step of forming a pattern on the wafer W based on the management method (steps 102 to 120) of the present embodiment and the values of parameters set by the management method (lithography step) And.
According to the lithography system DMS or the exposure method of the present embodiment, the parameters can be set efficiently, so that the throughput (productivity) in the lithography process can be improved. In addition, when the lithography apparatus is the exposure apparatus EXA to EXE, it is not necessary to adjust the parameters individually for each replacement of reticle in the exposure apparatus EXA etc. Therefore, even when, for example, small lot production is performed, the lithography process (exposure High throughput of the process).

(Modification)
In the above embodiment, the following modifications are possible.
In the present embodiment, a parameter selection determining unit 58 is provided in the master server 6. As another configuration, the parameter selection determining unit 58 is provided in each of the portions corresponding to the communication units 10A to 10E of each of the exposure apparatuses EXA to EXE, and the parameter selection determining section 58 separates a plurality of exposure apparatuses EXA to EXE. Parameters may be set.

In the above embodiment, the values of the parameters for the exposure apparatus are determined in the master server 6, but in the master server 6, the first set and the second set of parameters for the coater developer (not shown) are used. The values of multiple sets of parameters may be determined. In this case, as an example, the first set of parameters is <average value of film thickness, film thickness variation, and pre-baking time>, and the second set of parameters is <film thickness average value, film thickness variation, and Developing time>. In this case, the master server 6 may obtain parameters required to be set from the coater developer.

Further, in the above-described embodiment, although the plurality of parameters set in the master server 6 are set in the exposure apparatuses EXA to EXE, the plurality of parameters are set in the apparatus for simulating the exposure operation of the exposure apparatus. The exposure result (CD line width etc.) according to the set parameters may be determined by the exposure apparatus.
In addition, in the master server 6, values of parameters for a lithographic apparatus such as a thin film forming apparatus or an etching apparatus may be set.

  Moreover, when manufacturing electronic devices (micro devices), such as a semiconductor device, using the lithography system DMS of each said embodiment, the master server 6, or the exposure method using these, this electronic device is shown in FIG. Step 221 of designing the function and performance of the device, step 222 of fabricating a mask (reticle) based on this designing step, step 223 of fabricating a substrate (wafer) which is a substrate of the device, the embodiment described above Exposing the pattern of the mask onto the substrate by the lithography system DMS or the like, exposing the substrate, developing the exposed substrate, heating (curing) and etching the developed substrate, and the like; (Dicing process, bonding process, package Including processed processes such extent) 225, and an inspection step 226, and the like.

  In other words, the method of manufacturing the above device includes the steps of exposing the substrate (wafer) through the pattern of the mask using the lithography system DMS (exposure system) or the exposure method of the above embodiment, and the exposure A step of processing the substrate (that is, developing the resist of the substrate and forming a mask layer corresponding to the pattern of the mask on the surface of the substrate, and processing the surface of the substrate through the mask layer (heating And a processing step of etching and the like).

According to this device manufacturing method, since parameters can be efficiently set in the exposure apparatus EXB and the like, electronic devices can be manufactured with high throughput and high accuracy.
The exposure apparatus provided in the lithography system of the above embodiment may be a stepper-type exposure apparatus or the like. Furthermore, the exposure apparatus may be an exposure apparatus (EUV exposure apparatus) or the like that uses extreme ultraviolet light (hereinafter referred to as EUV light) having a wavelength of 100 nm or less as exposure light.

Further, in the device manufacturing method of the present embodiment, the manufacturing method of the semiconductor device has been particularly described. However, in the device manufacturing method of the present embodiment, semiconductor devices such as liquid crystal panels and magnetic disks besides devices using semiconductor materials It can be applied to the manufacture of devices using other materials.
The present invention is not limited to the above-described embodiment, and various configurations can be taken without departing from the scope of the present invention.

  DMS: Lithography system, EXA to EXE: Exposure apparatus, RA: Reticle, PL: Projection optical system, W: Wafer, 6 .: Master server, 10A to 10E: Communication unit, 12: Communication line, 55: Parameter information storage unit, 58 ... parameter selection determination unit, 62 ... parameter selection unit, 63, 64 ... parameter determination unit, 65A, 65B ... correction unit

Claims (13)

A management apparatus for managing first and second lithographic apparatus, comprising:
A setting unit configured to set, in the second lithography apparatus, a value of a common parameter that can be used by the second lithography apparatus out of a plurality of first parameters used by the first lithography apparatus in a lithography process;
A management device of a lithographic apparatus, comprising: a calculation unit for obtaining a correction value of the common parameter from a result of a lithography process of the second lithographic apparatus using the set value of the common parameter. The setting unit is configured to set a value of the first plurality of parameters in the first lithography apparatus;
The apparatus according to claim 1, further comprising: a second parameter input unit configured to set, in the second lithography apparatus, a value of the common parameter among the first plurality of parameters.   The setting unit is configured to set a third parameter input unit configured to set, in the second lithography apparatus, values of parameters excluding the common parameter among the second plurality of parameters used by the second lithography apparatus in the lithography process. The management apparatus of a lithographic apparatus according to claim 2, comprising. A storage unit configured to store an offset between the value of the common parameter for the first lithographic apparatus and the value of the common parameter for the second lithographic apparatus;
The apparatus according to claim 2 or 3, wherein a value obtained by correcting the value of the common parameter using the offset from the second parameter input unit is input to the second lithography apparatus. . The storage unit forms a first pattern on a substrate using initial values of the plurality of first parameters and the first lithography apparatus in a lithography process, and measures the formed first pattern. Store the measurement results obtained by
The first parameter input unit is
The initial values of the first plurality of parameters are corrected according to the measurement result of the first pattern, and the values of the first plurality of parameters after correction are set in the first lithography apparatus. Management apparatus of a lithographic apparatus as described.   The apparatus according to any one of claims 1 to 5, further comprising a display unit configured to display the common parameter.   The apparatus according to any one of claims 1 to 6, further comprising a determination unit that determines whether the value of the common parameter falls within an allowable range set in the second lithography apparatus.   The apparatus according to claim 7, wherein a determination result of the determination unit is displayed on a display unit. The first plurality of parameters include a parameter group consisting of a plurality of parameters used in connection with each other in a lithography process,
The apparatus according to any one of claims 1 to 8, wherein the common parameter includes the parameter group. The first and second lithographic apparatus are each an exposure apparatus,
The common parameter includes at least one of a parameter for correcting an overlay error for each of a plurality of shots of the substrate and a parameter for correcting a defocus amount for each of a plurality of shots of the substrate. The management apparatus of a lithographic apparatus according to any one of the preceding claims.   A program that causes a computer included in the management apparatus to execute the processing of the setting unit included in the management apparatus of the lithography apparatus according to any one of claims 1 to 10. In an exposure system for forming a pattern on a substrate,
A management apparatus of a lithographic apparatus according to any one of the preceding claims.
First and second exposure apparatuses as the first and second lithography apparatuses;
Exposure system comprising: Forming a predetermined pattern on a substrate using the exposure system according to claim 12;
Processing the surface of the substrate through the predetermined pattern.

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