JP2019102599A - Semiconductor device manufacturing method - Google Patents

Abstract

To provide a semiconductor device manufacturing method which simply achieves downsizing and low profile.SOLUTION: A manufacturing method of a semiconductor device 1A which comprises an electrode 22 on a surface of a conductive semiconductor chip 21a and in which lateral faces of the semiconductor chips are coated with an insulating resin 50, includes the steps of: forming electrodes on a surface of a conductive semiconductor substrate 20; attaching a surface of the semiconductor substrate opposite to the surface where the electrodes are formed to a support member 60; dicing the semiconductor substrate by removing part of the semiconductor substrate from the surface side and forming clearances among neighboring semiconductor chips to arrange the semiconductor chips in an array on the support member in a state of keeping clearances; selectively filing up the clearances with the insulating resin so as to cover lateral faces of the semiconductor chips; and removing part of the filled up insulating resin by grinding to dice the semiconductor substrate into individual semiconductor devices. The step of dicing into semiconductor devices is a step of removing part of the insulating resin by leaving the insulating resin on the lateral faces of the semiconductor chips.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method of manufacturing a semiconductor device that meets the demand for downsizing and low profile, and more particularly to a method of manufacturing a semiconductor device in which the side surface of a semiconductor chip is covered with an insulating resin.

With the miniaturization of electronic devices, miniaturization and reduction in height of semiconductor devices to be mounted are required. Therefore, a method of directly connecting a semiconductor device on a mounting substrate in a bare chip state is adopted. FIG. 6 is a view showing the bare chip semiconductor device 2A mounted on the mounting substrate 10. As shown in FIG. A wiring metal 11 is formed on the surface of the mounting substrate 10. On the other hand, in the semiconductor device 2A, a semiconductor element (not shown) is formed on the surface side (lower side in the drawing) of the conductive semiconductor chip 21 and an electrode 22 connected to the semiconductor element is formed on the surface of the semiconductor chip 21. There is.
The surface of the semiconductor chip 21 is covered with the insulating film 23 except for a part of the surface of the electrode 22. Generally, when mounting on the mounting substrate 10, the wiring metal 11 and the electrode 22 are connected by the solder 30 of the bonding member.

  As described above, although the surface of the semiconductor device 2A is covered with the insulating film 23, the side surface has a structure in which the cut surface of the semiconductor chip 21 is exposed. Therefore, when mounting defects on the mounting substrate 10 using the solder 30 occurs, such as misalignment or inclination of the chip, the solder 30 creeps up the side of the semiconductor chip 21 as shown in FIG. There is a problem of shorting with the semiconductor chip 21.

  Then, in order to solve such a problem, the method of insulating the side surface of the semiconductor chip 21 is examined. As one of the methods, it is conceivable to coat the side surface of the semiconductor device with an insulating resin. For example, Patent Document 1 discloses that a semiconductor chip which has been singulated is covered with a sealing resin and cut. A method is disclosed in which the side or back surface is covered with a resin and then singulated to form a semiconductor device. Specifically, first, the semiconductor chip 80 provided with the bump electrode 22B is mounted on the interposer 40 (FIG. 8a). Since the bump electrode 22B forms a junction having a high height, it is possible to prevent a defect due to a creeping up of solder or the like. Thereafter, an insulating resin 50 is applied to the entire surface and planarized (FIG. 8b). The flat surface of the insulating resin 50 is attached to the dicing tape 60, and singulated from the interposer 40 side using the dicing saw 70 (FIG. 8c). Here, when singulating, since the cutting position can not be confirmed from the insulating resin 50 side, the cutting is performed from the interposer 40 side on which the wiring and the like are formed. Moreover, in order to affix the insulating resin 50 to the dicing tape 60, the insulating resin 50 needs to be flat. As a result, the singulated semiconductor device 2B has a structure in which a rectangular insulating resin is formed on the interposer 40, and when the electrodes formed on the interposer 40 are mounted on a mounting substrate or the like, the solder creeps up Even if it happens, problems such as short circuit will not occur.

  In addition, since the insulating resin 50 for covering the semiconductor chip 80 is formed to secure the reliability of the semiconductor chip 80, it is generally formed to be thick.

  Furthermore, in Patent Document 2, a semiconductor wafer is attached to a dicing tape, divided into pieces, and the dicing tape is expanded to widen the spaces between the separated semiconductor chips, to be in a state corresponding to FIG. A technique for filling the gap with a sealing resin (corresponding to FIG. 8b) is disclosed. Thereafter, the method of singulating is the same as the method shown in FIG. 8C, and the sealing resin is attached to the dicing tape 60, and singulated with the dicing saw 70 with the opposite side to the sealing resin as the surface. The method is taken.

Patent No. 3741670 gazette JP 2003-273279 A

  Conventionally, when mounting a semiconductor device in a bare chip state with a bonding member such as solder, there has been a problem that the bonding member crawls up the side surface of the conductive semiconductor chip and shorts with the semiconductor chip. As a method of solving this problem, a method of covering the side surface of the semiconductor device with an insulating resin is also proposed.

  However, in the method proposed conventionally, it is necessary to apply a thick insulating resin on the semiconductor chip in order to use the interposer 40 or to bring the surface of the insulating resin 50 into close contact with the dicing tape. It had been an obstacle to turning her back on.

  An object of the present invention is to provide a method of manufacturing a semiconductor device which prevents a defect due to creeping of a bonding member to a semiconductor device and realizes a reduction in height.

  In order to achieve the above object, a method of manufacturing a semiconductor device according to claim 1 of the present application is a method of manufacturing a semiconductor device in which an electrode is provided on the surface of a conductive semiconductor chip and the side surface of the semiconductor chip is covered with an insulating resin. And a step of forming the electrode on the surface of the conductive semiconductor substrate, and affixing a surface of the semiconductor substrate opposite to the surface provided with the electrode on a supporting member, and a part of the semiconductor substrate from the surface side Aligning the semiconductor chips while maintaining the gap on the supporting member by removing and singulating and forming a gap between the adjacent semiconductor chips; Selectively filling the gap with the insulating resin so as to cover the side surface of the semiconductor device, and cutting and removing a part of the filled insulating resin to singulate the individual semiconductor devices Includes a degree, the step of dicing said semiconductor device, said leaving the insulating resin on a side surface of the semiconductor chip, characterized in that it is a process of removing part of the insulating resin.

  A method of manufacturing a semiconductor device according to a second aspect of the present invention is a method of manufacturing a semiconductor device in which an electrode is provided on the surface of a conductive semiconductor chip, and the side surface of the semiconductor chip is covered with an insulating resin. The step of forming the electrode on the surface, and the surface of the semiconductor substrate opposite to the surface provided with the electrode are attached to a supporting member, and the region removed from the surface side of the semiconductor substrate during singulation By leaving a part and forming a groove in the semiconductor substrate, filling the groove with the insulating resin selectively, and removing the filled insulating resin and part of the semiconductor substrate And a step of singulating the individual semiconductor devices, wherein the step of singulating the semiconductor devices leaves the insulating resin on the side surface of the semiconductor chip, and forms part of the insulating resin and the semiconductor substrate. In the process of removing And wherein the Rukoto.

  A method of manufacturing a semiconductor device according to a third aspect of the present invention is the method of manufacturing a semiconductor device according to the second aspect, wherein the step of singulating the semiconductor device leaves the insulating resin on the side surface of the semiconductor chip. The method may further include the step of grinding the back surface of the semiconductor substrate when removing part of the semiconductor substrate after removing the insulating resin.

  According to the present invention, since the insulating resin covering the back surface of the semiconductor substrate can be eliminated while maintaining the insulating property, the semiconductor device can be miniaturized and the height thereof can be reduced.

  In the method of manufacturing a semiconductor device according to the present invention, after bonding the semiconductor substrate onto the supporting member, the semiconductor chip is singulated, and the space between the semiconductor chips is covered with the insulating resin. It is a very simple method because the step of forming can be carried out continuously.

  In particular, since the semiconductor device is continuously manufactured in the state of being stuck on the supporting member, even a thin semiconductor chip of about 100 μm can be manufactured without any problem, and a lower height can be realized. It has the advantage of

  Furthermore, there is an advantage that the height can be reduced by removing the support member from the supporting member in a relatively thick state and grinding the back surface of the semiconductor substrate.

FIG. 7 is a drawing for explaining the manufacturing process of the semiconductor device of the first embodiment of the present invention. It is explanatory drawing of the semiconductor device by the manufacturing method of the 1st Example of this invention. It is a figure explaining the manufacturing process of the semiconductor device of the 2nd example of the present invention. It is explanatory drawing of the semiconductor device by the manufacturing method of the 2nd Example of this invention. It is a figure explaining the manufacturing process of the semiconductor device of the 3rd example of the present invention. It is a figure which shows the state which mounted the semiconductor chip on the mounting substrate. FIG. 13 is an explanatory view of a case where solder creeping up on the side surface of the semiconductor chip occurs at the time of mounting. It is explanatory drawing of the conventional manufacturing method which coat | covers a semiconductor device with insulating resin.

  The present invention proposes a method of manufacturing a semiconductor device in which the side surface of a semiconductor chip is covered with an insulating resin. In particular, when mounting a semiconductor device according to the manufacturing method of the present invention, even if a bonding member such as solder crawls up the side surface of the semiconductor chip, the side surface is covered with an insulating resin, and problems such as short circuit occur. It is preventing in advance. Hereinafter, examples of the present invention will be described in detail.

  First, a method of manufacturing a semiconductor device having a structure in which the entire side surface of a semiconductor chip is covered with an insulating resin will be described in detail with reference to the first embodiment of the present invention.

  FIG. 1 shows a method of manufacturing the semiconductor device of this embodiment. A desired semiconductor element (not shown) is formed on the surface side (upper side in FIG. 1) of a conductive semiconductor substrate 20 having a thickness of about 630 μm in accordance with a general semiconductor device manufacturing method, and an electrode 22 connected to this semiconductor element Are formed on the surface of the semiconductor substrate 20. The surface of the semiconductor substrate 20 is covered with an insulating film 23 so as to expose a part of the surface of the electrode 22. Next, the back surface side of the semiconductor substrate 20 is ground (not shown) to a predetermined thickness (for example, about 260 μm) in accordance with the usual semiconductor device manufacturing process as needed.

  Subsequently, the back surface opposite to the front surface of the semiconductor substrate 20 is attached to a dicing tape 60 (corresponding to a supporting member). A part of the semiconductor substrate 20 is removed in a lattice shape from the surface side of the semiconductor substrate 20 to the area reaching the dicing tape 60 using the dicing saw 70A, and a first through groove 90a is provided. FIG. 1A shows an intermediate step of the dicing step, and a region shown by a dotted line in the drawing is a formation planned region of the first through groove 90a, which corresponds to a gap between adjacent semiconductor chips.

  The semiconductor chips 21a separated by the first through grooves 90a are arranged on the dicing tape 60 with a predetermined interval (width cut and removed by the dicing saw 70A). As an example, when the semiconductor substrate 20 is singulated using a dicing saw 70A having a thickness of 50 μm, the first through groove 90a has a width of about 50 μm. In a general semiconductor device manufacturing process, the dicing tape 60 is expanded after being singulated in this manner to widen the space between the semiconductor chips 21a. However, in the present embodiment, the dicing tape 60 is not expanded in order to maintain the state of alignment.

  Subsequently, with the alignment state maintained, a dam of about 1 mm in height is surrounded by a dispensing method on a dicing tape 60 separated by about 1 cm from the outer peripheral end of the semiconductor substrate (not shown). The dam material can be selected from silicone resin and epoxy resin.

  Next, the insulating resin 50 is applied on the dicing tape 60 between the semiconductor chip 21a and the dam while maintaining the state of the alignment (not shown).

  As the insulating resin 50, for example, a liquid epoxy resin having a viscosity of about 200 mPa · s at normal temperature is heated to a temperature of 50 ° C. to fill the first through groove 90a in a state where the fluidity is increased. The insulating resin 50 may be other than epoxy resin.

  The insulating resin 50 in the flowable state is uniformly filled in the first through groove 90a by capillary action. The insulating resin 50 that has flowed into the first through groove 90a does not creep up on the surface of the semiconductor chip 21a due to surface tension.

  Next, the insulating resin 50 is cured by heating at a temperature of 60 ° C. for 4 hours. The cured insulating resin 50 covers the side surface of the continuous insulating film 23 and the side surface of the semiconductor chip 21a (FIG. 1b).

  Subsequently, when a portion of the insulating resin 50 in the central portion of the first through groove 90 a is cut and removed to a depth reaching the dicing tape 60 using a dicing saw 70 B with a thickness of 30 μm, the side surface of the semiconductor chip 21 a is The insulating resin 50 is left (FIG. 1c). FIG. 1C shows the state of the singulation step, and the region between dotted lines in the drawing shows the region to be removed by cutting.

  Here, since the insulating resin 50 having a width of about 50 μm is cut and removed using a dicing saw 70B having a thickness of 30 μm, the thickness of each width of the remaining insulating resin 50 is about 10 μm. The remaining insulating resin 50 is an insulating resin which covers the side surface of the insulating film 23 covering the surface of the semiconductor chip 21a and the side surface of the semiconductor chip 21a. After the dicing step, the semiconductor devices 1A are aligned on the dicing tape 60 (FIG. 1d).

  According to the manufacturing method of this embodiment, only the side surface is covered with the insulating resin 50, and the back surface is not covered with the insulating resin 50. Therefore, the conventional back surface is covered with the insulating resin. The height can be reduced compared to the semiconductor device.

  Furthermore, according to the manufacturing method of the present embodiment, once the semiconductor substrate 20 is attached to the dicing tape 60, singulation to the semiconductor chip 21a by formation of the first through groove 90a, insulation to the first through groove 90a It is possible to continuously advance the manufacturing process up to the filling of the insulating resin 50 and the singulation to the semiconductor device 1A. In addition, since the semiconductor chip 20 is attached to the dicing tape 60 so as to expose the surface of the semiconductor substrate 20, singulation with high positional accuracy can be performed by using alignment marks for alignment formed on the surface of the semiconductor substrate 20. . Particularly in the step of singulating the semiconductor device 1A, since the same state as when the semiconductor substrate 20 is attached to the dicing tape 60 is maintained, the insulating resin 50 having a uniform thickness is left on the side surface of the semiconductor chip 21a. It becomes possible to separate the semiconductor device 1A.

  FIG. 2 (a) is a cross-sectional view of a semiconductor device 1A manufactured according to the manufacturing method of the first embodiment, and FIG. 2 (b) is a mounted face-down of the semiconductor device 1A shown in FIG. 2 (a). The sectional view in the state where the solder crawled up is shown. When mounting the semiconductor device 1A on the mounting substrate 10, even if the solder 30 creeps up as shown in FIG. 2B, the insulating film 23 covering the surface of the semiconductor chip 21a and the side surface of the semiconductor chip 21a are covered. Since the insulating resin 50 is present, a problem such as a short circuit does not occur between the electrode 22 and the semiconductor chip 21a.

  Next, a method of manufacturing a semiconductor device having a structure in which the side surface of a semiconductor chip is selectively covered with an insulating resin will be described in detail as to a second embodiment of the present invention.

  FIG. 3 shows a method of manufacturing the semiconductor device of this embodiment. First, a desired semiconductor element (not shown) on the surface side (upper side in FIG. 3) of the conductive semiconductor substrate 20 having a thickness of about 630 μm similar to that of the first embodiment, and an electrode 22 connected to the semiconductor element. An insulating film 23 covering the surface of the semiconductor substrate 20 is formed to expose a part of the surface of the electrode 22.

  Subsequently, the back surface opposite to the front surface of the semiconductor substrate 20 is attached to a dicing tape 60 (corresponding to a supporting member). Up to this point, the process is the same as that of the first embodiment. Subsequently, a part of the semiconductor substrate 20 is cut and removed in a grid shape from the surface side of the semiconductor substrate 20 to a depth of 300 μm using a dicing saw 70A with a width of 50 μm to form a first groove 91b (FIG. 3a) .

  Subsequently, as in the first embodiment, a dam having a height of about 1 mm is formed on the dicing tape 60 separated by about 1 cm outside the semiconductor substrate in which the first groove 91 b is formed (not shown). Furthermore, the insulating resin 50 is applied on the dicing tape 60 between the semiconductor substrate and the dam to such a height that the first groove 91 b can flow.

  For example, in the case of using the same epoxy resin as that of the first embodiment, the first groove 91b is filled in a state in which the flowability is increased by heating. The insulating resin 50 that has flowed into the first groove 91 b does not creep up on the surface of the semiconductor substrate 20 a due to surface tension.

  Next, the insulating resin 50 is cured by heating at a temperature of 60 ° C. for 4 hours. The cured insulating resin 50 covers the side surface of the insulating film 23 and the side surface of the semiconductor chip 21a as in the first embodiment (FIG. 3b).

  Subsequently, when a portion of the insulating resin 50 in the central portion of the first groove 91 b is cut and removed to a depth reaching the dicing tape 60 using a dicing saw 70 B with a thickness of 30 μm, the second through hole 90 b It is formed. The side surface of the second through hole 90 b is a cutting surface in which the surface made of the insulating resin 50 and the surface on which the semiconductor substrate 20 a is exposed are continuous. Here, since the insulating resin 50 having a width of about 50 μm is cut and removed using a dicing saw 70B having a thickness of 30 μm, the thickness of each of the remaining insulating resin 50 is about 10 μm. (Figure 3c).

  The remaining insulating resin 50 is an insulating resin which covers the side surface of the insulating film 23 on the surface of the semiconductor chip 21b and a part of the side surface of the semiconductor substrate 20a. After the dicing step, the semiconductor devices 1B are aligned on the dicing tape 60 (FIG. 3d).

  Also in the manufacturing method of the present embodiment, as in the case of the first embodiment, only the side surface that may cause an unnecessary short circuit is covered with the insulating resin 50, and the back surface is not covered with the insulating resin 50. As a result, the height can be reduced compared to the conventional semiconductor device covered with the insulating resin up to the back surface.

  FIG. 4 (a) is a cross-sectional view of a semiconductor device 1B manufactured by the manufacturing method of the second embodiment, and FIG. 4 (b) is a face-down mounting of the semiconductor device 1B shown in FIG. 4 (a). The figure shows a cross-sectional view of a state in which the solder creeps up. Even in the semiconductor device 1B of this embodiment, even if creeping up of the solder 30 occurs, the insulating film 23 covering the surface of the semiconductor chip 21b and the insulating resin 50 covering the side surface of the semiconductor chip 21b are present. There is no problem such as a short circuit with the chip 21b.

  Next, a third embodiment of the present invention will be described in detail with reference to a method of manufacturing a semiconductor device whose height is further reduced than that of the semiconductor device 1A manufactured in the first embodiment of the present invention.

  FIG. 5 shows a method of manufacturing the semiconductor device of this embodiment. First, a desired semiconductor element (not shown) on the surface side (upper side in FIG. 5) of the conductive semiconductor substrate 20 having a thickness of about 630 μm similar to the first and second embodiments and electrodes connected to this semiconductor element 22 and an insulating film 23 covering the surface of the semiconductor substrate 20 so as to expose a part of the surface of the electrode 22.

  Subsequently, as in the second embodiment, the back surface opposite to the front surface of the semiconductor substrate 20 is attached to the dicing tape 60, and the insulating resin 50 is filled in the first groove 91b formed on the front surface side. The semiconductor substrate 20a is prepared (corresponding to FIG. 3b).

  Subsequently, in the present embodiment, the insulating resin 50 is used using the dicing saw 70B with a thickness of 30 μm until a part of the semiconductor substrate 20a constituting the bottom of the first groove 91b filled with the insulating resin 50 is exposed. The second groove 91c is formed (FIG. 5a).

  The dicing tape 60 bonded to the back surface side opposite to the front surface of the semiconductor substrate 20a is peeled off, and a back grind tape 61 as a protective member is bonded to the front surface side of the semiconductor substrate 20a. Then, grinding is performed from the back surface side of the semiconductor substrate 20a to a thickness at which the insulating resin 50 and the second groove 91c shown by dotted lines in the drawing are exposed (FIG. 5b). Instead of forming the second groove 91c, another second groove shallower than the depth shown in FIG. 5A is formed, and when the second groove is exposed, the semiconductor substrate 20a is ground. You may stop it. Alternatively, instead of forming the second groove 91c, another second groove deeper than the depth shown in FIG. 5A is formed, and when the second groove is exposed, the semiconductor substrate 20a is formed. Grinding may be stopped.

  The semiconductor substrate 20a is separated into the semiconductor chips 21c by the third through holes 90c by this back surface grinding. As a result of this separation, the semiconductor device 1C is singulated while leaving the insulating resin 50 of uniform thickness on the side surface of the semiconductor chip 21c, and is in a state of being aligned on the back grind tape 61 (FIG. 5c). The semiconductor device 1C can be reduced in height to a desired thickness by grinding the back surface of the semiconductor substrate 20a. For example, the thickness can be about 100 μm.

  The semiconductor device 1C manufactured by the manufacturing method of the third embodiment becomes a semiconductor device having a smaller height than the semiconductor devices 1A and 1B manufactured in the first embodiment or the second embodiment.

  Although the embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to the above embodiments.

  For example, in the formation of the through groove and the groove on the surface of the semiconductor substrate or the singulation into semiconductor chips or singulation into semiconductor devices, a dicing saw is used in the above embodiment, but a singulation method using a laser or the like is used It is good.

1A, 1B, 1C, 2A, 2B: semiconductor device, 10: mounting substrate, 11: wiring metal, 20, 20a: semiconductor substrate, 21a, 21b: semiconductor chip, 22: electrode, 23: insulating film, 30: solder, 50: Insulating resin, 60: dicing tape, 61: back grind tape, 70, 70A, 70B: dicing saw, 90a: first through groove, 90b: second through groove, 90c: third through groove, 91b: first groove, 91c: second groove

Claims (3)

In a method of manufacturing a semiconductor device, an electrode is provided on a surface of a conductive semiconductor chip, and a side surface of the semiconductor chip is covered with an insulating resin,
Forming the electrode on the surface of a conductive semiconductor substrate;
The surface opposite to the surface provided with the electrodes of the semiconductor substrate is attached to a supporting member, and a part is removed from the surface side of the semiconductor substrate for singulation, and a gap is formed between the adjacent semiconductor chips. Aligning the semiconductor chips in a state in which the gap is maintained on the supporting member;
Selectively filling the gap with the insulating resin so as to cover the side surfaces of the aligned semiconductor chips;
Including the step of singulating the individual semiconductor devices by cutting and removing a part of the filled insulating resin,
A method of manufacturing a semiconductor device, wherein the step of singulating the semiconductor device is a step of leaving the insulating resin on the side surface of the semiconductor chip and removing a part of the insulating resin. In a method of manufacturing a semiconductor device, an electrode is provided on a surface of a conductive semiconductor chip, and a side surface of the semiconductor chip is covered with an insulating resin,
Forming the electrode on the surface of a conductive semiconductor substrate;
The surface opposite to the surface provided with the electrode of the semiconductor substrate is attached to a supporting member, and a groove is formed in the semiconductor substrate leaving a part of the region to be removed in the singulation from the surface side of the semiconductor substrate. Forming the
Selectively filling the groove with the insulating resin;
Including the step of singulating the individual semiconductor devices by removing the filled insulating resin and a part of the semiconductor substrate,
The step of singulating the semiconductor device is a step of leaving the insulating resin on the side surface of the semiconductor chip and removing the insulating resin and a part of the semiconductor substrate. Method. In the method of manufacturing a semiconductor device according to claim 2,
In the step of singulating the semiconductor device, after removing the insulating resin after leaving the insulating resin on the side surface of the semiconductor chip, when removing a part of the semiconductor substrate, the back surface of the semiconductor substrate A method of manufacturing a semiconductor device, comprising the step of:

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