JP2019085378A - Aromatic amine derivative having organic cation moiety, and perovskite solar cell using the same - Google Patents
Aromatic amine derivative having organic cation moiety, and perovskite solar cell using the same Download PDFInfo
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- JP2019085378A JP2019085378A JP2017216195A JP2017216195A JP2019085378A JP 2019085378 A JP2019085378 A JP 2019085378A JP 2017216195 A JP2017216195 A JP 2017216195A JP 2017216195 A JP2017216195 A JP 2017216195A JP 2019085378 A JP2019085378 A JP 2019085378A
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- Prior art keywords
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- aromatic amine
- amine derivative
- compound
- general formula
- Prior art date
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- 150000004982 aromatic amines Chemical class 0.000 title claims abstract description 65
- 150000002892 organic cations Chemical group 0.000 title claims abstract description 7
- -1 halogen anion Chemical class 0.000 claims abstract description 20
- 125000003118 aryl group Chemical group 0.000 claims abstract description 16
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 11
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 37
- 125000001424 substituent group Chemical group 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004414 alkyl thio group Chemical group 0.000 claims description 4
- 125000000304 alkynyl group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000004104 aryloxy group Chemical group 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 125000002252 acyl group Chemical group 0.000 claims description 3
- 125000004442 acylamino group Chemical group 0.000 claims description 3
- 125000004423 acyloxy group Chemical group 0.000 claims description 3
- 125000004453 alkoxycarbonyl group Chemical group 0.000 claims description 3
- 125000004466 alkoxycarbonylamino group Chemical group 0.000 claims description 3
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 3
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 claims description 3
- 125000005162 aryl oxy carbonyl amino group Chemical group 0.000 claims description 3
- 125000005110 aryl thio group Chemical group 0.000 claims description 3
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 3
- 125000006296 sulfonyl amino group Chemical group [H]N(*)S(*)(=O)=O 0.000 claims description 3
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 3
- 125000003107 substituted aryl group Chemical group 0.000 claims description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 1
- 239000002648 laminated material Substances 0.000 abstract description 18
- 230000002349 favourable effect Effects 0.000 abstract 2
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- 238000002330 electrospray ionisation mass spectrometry Methods 0.000 description 54
- 239000000047 product Substances 0.000 description 48
- 238000005160 1H NMR spectroscopy Methods 0.000 description 36
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- 239000000243 solution Substances 0.000 description 28
- 239000000203 mixture Substances 0.000 description 21
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 18
- 238000005481 NMR spectroscopy Methods 0.000 description 18
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 18
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 11
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- 238000000034 method Methods 0.000 description 8
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- 239000000463 material Substances 0.000 description 7
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- XRNVSPDQTPVECU-UHFFFAOYSA-N (4-bromophenyl)methanamine Chemical compound NCC1=CC=C(Br)C=C1 XRNVSPDQTPVECU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- TWWQCBRELPOMER-UHFFFAOYSA-N [4-(n-phenylanilino)phenyl]boronic acid Chemical compound C1=CC(B(O)O)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 TWWQCBRELPOMER-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- AOSZTAHDEDLTLQ-AZKQZHLXSA-N (1S,2S,4R,8S,9S,11S,12R,13S,19S)-6-[(3-chlorophenyl)methyl]-12,19-difluoro-11-hydroxy-8-(2-hydroxyacetyl)-9,13-dimethyl-6-azapentacyclo[10.8.0.02,9.04,8.013,18]icosa-14,17-dien-16-one Chemical compound C([C@@H]1C[C@H]2[C@H]3[C@]([C@]4(C=CC(=O)C=C4[C@@H](F)C3)C)(F)[C@@H](O)C[C@@]2([C@@]1(C1)C(=O)CO)C)N1CC1=CC=CC(Cl)=C1 AOSZTAHDEDLTLQ-AZKQZHLXSA-N 0.000 description 3
- GLGNXYJARSMNGJ-VKTIVEEGSA-N (1s,2s,3r,4r)-3-[[5-chloro-2-[(1-ethyl-6-methoxy-2-oxo-4,5-dihydro-3h-1-benzazepin-7-yl)amino]pyrimidin-4-yl]amino]bicyclo[2.2.1]hept-5-ene-2-carboxamide Chemical compound CCN1C(=O)CCCC2=C(OC)C(NC=3N=C(C(=CN=3)Cl)N[C@H]3[C@H]([C@@]4([H])C[C@@]3(C=C4)[H])C(N)=O)=CC=C21 GLGNXYJARSMNGJ-VKTIVEEGSA-N 0.000 description 3
- SUYJXERPRICYRX-UHFFFAOYSA-N (3-bromophenyl)methanamine Chemical compound NCC1=CC=CC(Br)=C1 SUYJXERPRICYRX-UHFFFAOYSA-N 0.000 description 3
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 3
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- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 125000004450 alkenylene group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229940006460 bromide ion Drugs 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- PXQFMBNNNYOFRN-UHFFFAOYSA-N chlorobenzene;propan-2-ol Chemical group CC(C)O.ClC1=CC=CC=C1 PXQFMBNNNYOFRN-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 description 1
- 125000005724 cycloalkenylene group Chemical group 0.000 description 1
- 125000002993 cycloalkylene group Chemical group 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 229940006461 iodide ion Drugs 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本発明は、ペロブスカイト型太陽電池の性能を向上するための機能性材料、およびそれを用いた太陽電池に関するものである。 The present invention relates to a functional material for improving the performance of a perovskite-type solar cell, and a solar cell using the same.
太陽光を効率よく電気に変換できる太陽電池はエネルギー・環境問題の観点から注目されている。実用化されている太陽電池は主にシリコンを用いるものであるが、これらの太陽電池は製造コストが高く、一般家庭に広く普及するには至っていない。シリコン系太陽電池に変わる新しいタイプの太陽電池の研究が進められており、その1つとして有機系太陽電池がある。有機系太陽電池は、資源的制約が少ないこと、製造コストが比較的低いこと、軽量・フレキシブルなどの利点があり、その普及が期待されている。しかしながら、エネルギー変換効率や耐久性等の面でシリコン系太陽電池に劣っており、実用化に向けた課題が残っている。 Solar cells capable of efficiently converting sunlight into electricity are attracting attention in terms of energy and environmental problems. Solar cells in practical use mainly use silicon, but these solar cells are expensive to manufacture and have not been widely used in general homes. Research is being conducted on new types of solar cells replacing silicon-based solar cells, one of which is organic solar cells. Organic solar cells have advantages such as less resource limitation, relatively low manufacturing cost, and light weight / flexibility, and their spread is expected. However, they are inferior to silicon-based solar cells in terms of energy conversion efficiency, durability, etc., and there remain problems for practical use.
一方で、ペロブスカイト型太陽電池は、２００９年に溶液型の電池が報告され（非特許文献１）、その後、２０１２年に固体型の電池が報告されるとエネルギー変換効率が急速に進展した（非特許文献２）。ペロブスカイト型太陽電池の基本構造は、通常、透明電極の上に、光吸収層（ペロブスカイト層）をn型およびp型のバッファ層で挟んだ構造である。n型バッファ層としては、酸化チタンからなる緻密なチタニアの膜が用いられることが多く、p型バッファ層としては、有機半導体の正孔輸送材料が一般的に用いられている。 On the other hand, in the case of a perovskite type solar cell, a solution type cell was reported in 2009 (Non-patent Document 1), and then, when a solid type cell was reported in 2012, energy conversion efficiency developed rapidly (non- Patent Document 2). The basic structure of the perovskite type solar cell is usually a structure in which a light absorption layer (perovskite layer) is sandwiched between n-type and p-type buffer layers on a transparent electrode. As the n-type buffer layer, a dense titania film made of titanium oxide is often used, and as the p-type buffer layer, a hole transport material of an organic semiconductor is generally used.
しかしながら、従来のペロブスカイト型太陽電池のエネルギー変換効率は十分とは言えず、現在も国内外で熾烈な高効率化競争が展開されている。中でも、エネルギー変換効率の向上のためには、n型バッファ層とペロブスカイト層、およびペロブスカイト層とp型バッファ層の積層材料界面における電荷再結合や直列抵抗などを制御しエネルギーロスを低減することが必要である。 However, the energy conversion efficiency of the conventional perovskite type solar cells is not sufficient, and severe competition for high efficiency is being developed at home and abroad. Above all, in order to improve the energy conversion efficiency, it is necessary to control energy recombination by controlling charge recombination, series resistance and the like at the interface of laminated materials of n-type buffer layer and perovskite layer, and perovskite layer and p-type buffer layer. is necessary.
そのような積層材料の界面に導入する化合物として、いくつかの報告例があるが（特許文献１並びに非特許文献３、４、および５）、ペロブスカイト型太陽電池の実用化に有用といえるほどの効果を示す化合物はほとんど報告されていないのが現状であり、更に優れた材料の開発が求められている。 There are some reports as examples of compounds to be introduced to the interface of such laminated materials (Patent Document 1 and Non-Patent Documents 3, 4 and 5), but they are useful for practical use of perovskite solar cells. At present, few compounds have been reported to be effective, and development of better materials is required.
本発明は、従来の技術における上記した状況に鑑みてなされたものであり、その目的は
、ペロブスカイト型太陽電池の積層材料界面のエネルギーロスを低減する化合物を提供し、さらにはこの化合物を用いた良好なペロブスカイト型太陽電池を提供することを課題とする。
The present invention has been made in view of the above-mentioned situation in the prior art, and its object is to provide a compound for reducing the energy loss at the interface of the laminated material of the perovskite type solar cell, and further using this compound It is an object of the present invention to provide a good perovskite solar cell.
本発明者等は、上記の課題を解決するために鋭意検討を行った。その結果、新規芳香族アミン誘導体をペロブスカイト型太陽電池の積層材料界面に導入することにより上記課題を解決できることを見出し、本発明を完成した。 The present inventors diligently studied to solve the above-mentioned problems. As a result, it discovered that the said subject was solvable by introduce | transducing a novel aromatic amine derivative into the laminated material interface of a perovskite type solar cell, and completed this invention.
すなわち、本発明は、一般式（１） That is, the present invention relates to the general formula (1)
（式中、Ar1〜Ar4はそれぞれ独立に置換または未置換のアリール基またはヘテロアリール基であって、Ar1とAr2、Ar1とAr3、Ar3とAr4はそれぞれ互いに結合して環を形成していてもよい；Xは有機カチオンである；Yはハロゲンアニオンである）で表される芳香族アミン誘導体である。
さらに、本発明は、一般式（１）におけるAr1およびAr2が、それぞれ独立に置換または未置換のアリール基である、芳香族アミン誘導体である。
さらに、本発明は、一般式（１）における置換アリール基または置換ヘテロアリール基の置換基が、アルキル基、アルケニル基、アルキニル基、アリール基、アミノ基、アルコキシ基、アリールオキシ基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、アシルオキシ基、アシルアミノ基、アルコキシカルボニルアミノ基、アリールオキシカルボニルアミノ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、スルホニル基、ハロゲン原子、シアノ基およびヘテロ環基から選ばれる、芳香族アミン誘導体である。
さらに、本発明は、一般式（１）におけるAr3およびAr4が、未置換のアリール基である、芳香族アミン誘導体である。
さらに、本発明は、一般式（１）におけるXが、アルキルアンモニウムカチオンおよびホルムアミジニウムカチオンから選ばれる、芳香族アミン誘導体である。
さらに、本発明は、一般式（１）で表される芳香族アミン誘導体が、下記式で表される化合物である、芳香族アミン誘導体である。
(Wherein, Ar 1 to Ar 4 are each independently a substituted or unsubstituted aryl group or heteroaryl group, and Ar 1 and Ar 2 , Ar 1 and Ar 3 , Ar 3 and Ar 4 are respectively bonded to each other X is an organic cation; Y is a halogen anion) and is an aromatic amine derivative represented by
Furthermore, the present invention is an aromatic amine derivative in which Ar 1 and Ar 2 in the general formula (1) are each independently a substituted or unsubstituted aryl group.
Furthermore, in the present invention, the substituent of the substituted aryl group or substituted heteroaryl group in the general formula (1) is an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an amino group, an alkoxy group, an aryloxy group, an acyl group, Alkoxycarbonyl group, aryloxycarbonyl group, acyloxy group, acylamino group, alkoxycarbonylamino group, aryloxycarbonylamino group, sulfonylamino group, sulfamoyl group, carbamoyl group, alkylthio group, arylthio group, sulfonyl group, halogen atom, cyano group And aromatic amine derivatives selected from heterocyclic groups.
Furthermore, the present invention is an aromatic amine derivative in which Ar 3 and Ar 4 in the general formula (1) are unsubstituted aryl groups.
Furthermore, the present invention is an aromatic amine derivative in which X in the general formula (1) is selected from an alkyl ammonium cation and a formamidinium cation.
Furthermore, the present invention is an aromatic amine derivative in which the aromatic amine derivative represented by the general formula (1) is a compound represented by the following formula.
さらに、本発明は、本発明の芳香族アミン誘導体を備える光電変換素子である。
さらにまた、本発明は、本発明の光電変換素子を備えるペロブスカイト型太陽電池である。
さらにまた、本発明は、本発明の光電変換素子を備える、フォトダイオードである。
さらにまた、本発明は、本発明の光電変換素子を備える、光センサである。
Furthermore, this invention is a photoelectric conversion element provided with the aromatic amine derivative of this invention.
Furthermore, the present invention is a perovskite type solar cell provided with the photoelectric conversion element of the present invention.
Furthermore, the present invention is a photodiode comprising the photoelectric conversion element of the present invention.
Furthermore, the present invention is an optical sensor comprising the photoelectric conversion element of the present invention.
さらにまた、本発明は、導電性支持体上に電子輸送層を有し、電子輸送層上にペロブスカイト化合物を含む光吸収層を有する第一電極と、第一電極に対向する第二電極とを有す
る光電変換素子の製造方法であって、
（ａ）電子輸送層と、本発明の芳香族アミン誘導体を含む溶液を接触させる工程；および／または、
（ｂ）光吸収層と、本発明の芳香族アミン誘導体を含む溶液を接触させる工程、
を含む、光電変換素子の製造方法である。
Furthermore, the present invention has a first electrode having an electron transport layer on a conductive support and having a light absorbing layer containing a perovskite compound on the electron transport layer, and a second electrode facing the first electrode. It is a manufacturing method of the photoelectric conversion element which it has,
(A) contacting an electron transporting layer with a solution containing the aromatic amine derivative of the present invention; and / or
(B) contacting a light absorbing layer with a solution containing the aromatic amine derivative of the present invention,
And a method of manufacturing a photoelectric conversion element.
本発明の芳香族アミン誘導体によれば、ペロブスカイト型太陽電池の積層材料界面に導入することにより、エネルギーロスを低減することができる。また、これを用いた光電変換素子およびペロブスカイト型太陽電池は、良好な変換効率を達成することができる。 According to the aromatic amine derivative of the present invention, energy loss can be reduced by introducing it to the laminated material interface of the perovskite type solar cell. Moreover, the photoelectric conversion element and the perovskite solar cell using the same can achieve good conversion efficiency.
（芳香族アミン誘導体）
本発明の芳香族アミン誘導体は、
一般式（１）
(Aromatic amine derivatives)
The aromatic amine derivative of the present invention is
General formula (1)
（式中、Ar1〜Ar4はそれぞれ独立に置換または未置換のアリール基またはヘテロアリール基であって、Ar1とAr2、Ar1とAr3、Ar3とAr4はそれぞれ互いに結合して環を形成していてもよい；Xは有機カチオンである；Yはハロゲンアニオンである）で表される芳香族アミン誘導体であって、種々の化合物となることが出来る。本発明の芳香族アミン誘導体は、積層材料界面において、少なくとも一種を導入することができ、複数種を導入することも可能である。 (Wherein, Ar 1 to Ar 4 are each independently a substituted or unsubstituted aryl group or heteroaryl group, and Ar 1 and Ar 2 , Ar 1 and Ar 3 , Ar 3 and Ar 4 are respectively bonded to each other It is an aromatic amine derivative represented by (1) which may form a ring; X is an organic cation; and Y is a halogen anion, and can be various compounds. At least one of the aromatic amine derivatives of the present invention can be introduced at the laminated material interface, and a plurality of types can also be introduced.
上記一般式（１）におけるAr1〜Ar4はそれぞれ独立に置換または未置換のアリール基またはヘテロアリール基であって、Ar1とAr2、Ar1とAr3、Ar3とAr4はそれぞれ互いに結合して環を形成していてもよい。Ar3に関し未置換とは、(Ar1Ar2)N-以外に置換基を有さないことを意味する。Ar4に関し未置換とは、Ar3以外に置換基を有さないことを意味する。
ここでアリール基は、特に限定されないが、フェニル基、ナフチル基などが挙げられる。
ヘテロアリール基は、特に限定されないが、ピリジン、ピラジン、ピリミジン、ピリダジン、ピロール、チオフェン、フラン、イミダゾール、ピラゾール、チアゾール、イソチアゾール、オキサゾール、イソオキサゾールなどに由来する１価の基が挙げられる。
Ar 1 to Ar 4 in the above general formula (1) are each independently a substituted or unsubstituted aryl group or heteroaryl group, and Ar 1 and Ar 2 , Ar 1 and Ar 3 , Ar 3 and Ar 4 are respectively They may be bonded to each other to form a ring. Unsubstituted with respect to Ar 3 means that it has no substituent other than (Ar 1 Ar 2 ) N—. Unsubstituted for Ar 4 means that it has no substituent other than Ar 3 .
Here, the aryl group is not particularly limited, and examples thereof include a phenyl group and a naphthyl group.
The heteroaryl group is not particularly limited, and includes monovalent groups derived from pyridine, pyrazine, pyrimidine, pyridazine, pyrrole, thiophene, furan, imidazole, pyrazole, thiazole, isothiazole, oxazole, isoxazole and the like.
Ar1〜Ar4は、置換基を有してもよく、置換基として好ましくは、アルキル基、アルケニル基、アルキニル基、アリール基、アミノ基、アルコキシ基、アリールオキシ基、アシル基、アルコキシカルボニル基、アリールオキシカルボニル基、アシルオキシ基、アシルアミノ基、アルコキシカルボニルアミノ基、アリールオキシカルボニルアミノ基、スルホニルアミノ基、スルファモイル基、カルバモイル基、アルキルチオ基、アリールチオ基、ス
ルホニル基、ハロゲン原子、シアノ基、ヘテロ環基などが挙げられる。置換基としてより好ましくは、アルキル基、アルケニル基、アルキニル基、アミノ基、アルコキシ基、アルキルチオ基などが挙げられる。置換基の炭素数としては、好ましくは炭素数１〜６、より好ましくは炭素数１〜３である。
Ar1〜Ar4における置換基の置換位置は、特に限定されない。
Ar3のアリール基またはヘテロアリール基における(Ar1Ar2)N-の結合位置は限定されないが、好ましくはp位である。Ar4のアリール基またはヘテロアリール基におけるAr3の結合位置は限定されないが、好ましくはp位またはm位である。
Ar 1 to Ar 4 may have a substituent, and the substituent is preferably an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an amino group, an alkoxy group, an aryloxy group, an acyl group, an alkoxycarbonyl group , Aryloxycarbonyl group, acyloxy group, acylamino group, alkoxycarbonylamino group, aryloxycarbonylamino group, sulfonylamino group, sulfamoyl group, carbamoyl group, alkylthio group, arylthio group, sulfonyl group, halogen atom, cyano group, heterocyclic ring Groups and the like. As a substituent, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an alkoxy group, an alkylthio group etc. are mentioned more preferably. The carbon number of the substituent is preferably 1 to 6 carbon atoms, and more preferably 1 to 3 carbon atoms.
The substitution position of the substituent in Ar 1 to Ar 4 is not particularly limited.
Although the bonding position of (Ar 1 Ar 2 ) N- in the aryl group or heteroaryl group of Ar 3 is not limited, it is preferably the p position. Although the bonding position of Ar 3 in the aryl group or heteroaryl group of Ar 4 is not limited, it is preferably the p position or the m position.
Ar1とAr2、Ar1とAr3、Ar3とAr4が、それぞれ互いに結合して環を形成している場合は、それぞれ互いに直接または連結基を介して結合して環を形成することが好ましい。
連結基の構造は特に制限されないが、例えば、アルキレン基、シリレン基、アルケニレン基、シクロアルキレン基、シクロアルケニレン基、アリーレン基などが挙げられ、これらは更に置換基を有してもよい。置換基としては、上記Ar1〜Ar4における置換基として例示した置換基が挙げられる。
When Ar 1 and Ar 2 , Ar 1 and Ar 3 , and Ar 3 and Ar 4 respectively bond to each other to form a ring, they form a ring by bonding directly or via a linking group to each other Is preferred.
The structure of the linking group is not particularly limited, and examples thereof include an alkylene group, a silylene group, an alkenylene group, a cycloalkylene group, a cycloalkenylene group, an arylene group and the like, which may further have a substituent. Examples of the substituent include substituents exemplified as the substituents for the Ar 1 to Ar 4.
Xは有機カチオンであり、好ましくはアルキルアンモニウムカチオン、ホルムアミジニウムカチオンからなる群から選ばれる少なくとも一種を含む。アルキルアンモニウムカチオンの炭素数としては、好ましくは炭素数１〜６、より好ましくは炭素数１〜３、さらに好ましくは炭素数１である。 X is an organic cation, and preferably contains at least one selected from the group consisting of an alkyl ammonium cation and a formamidinium cation. The carbon number of the alkylammonium cation is preferably 1 to 6 carbon atoms, more preferably 1 to 3 carbon atoms, and still more preferably 1 carbon atom.
Yはハロゲンアニオンであり、好ましくはフッ化物イオン(F-)、塩化物イオン(Cl-)、臭化物イオン(Br-)、ヨウ化物イオン(I-)である。 Y is a halogen anion, preferably fluoride ions (F -), chloride ion (Cl -), bromide ion (Br -) - a, iodide ion (I).
本発明の芳香族アミン誘導体の具体例として、例えば、下記式で表されるものを挙げることが出来る As a specific example of the aromatic amine derivative of the present invention, for example, one represented by the following formula can be mentioned
本発明の芳香族アミン誘導体の製造方法は、例えば、本発明の化合物2であれば、4−（ジフェニルアミノ）フェニルボロン酸と4−ブロモベンジルアミンを予め反応させて骨格となる芳香族アミン誘導体を合成し、さらにこれをヨウ化水素酸で処理することにより得
ることが出来る。その他の芳香族アミン誘導体についても、上記製造方法および通常の有機化学合成手法に基づいて得ることができる。
In the method for producing an aromatic amine derivative of the present invention, for example, in the case of compound 2 of the present invention, an aromatic amine derivative which is reacted beforehand with 4- (diphenylamino) phenylboronic acid and 4-bromobenzylamine Can be obtained by further synthesizing it and treating it with hydroiodic acid. Other aromatic amine derivatives can also be obtained based on the above-mentioned production method and ordinary organic chemical synthesis techniques.
（光電変換素子）
本発明の芳香族アミン誘導体は、光電変換素子の積層材料界面に導入する化合物として用いることが出来る。本発明の光電変換素子は、積層材料界面に本発明の芳香族アミン誘導体を導入する以外は、通常の光電変換素子の構造を有するものであってよい。具体的には、例えば、導電性支持体上に電子輸送層を有し、電子輸送層上にペロブスカイト化合物を含む光吸収層を有する第一電極と、第一電極に対向する第二電極（対極）とを有する光電変換素子であって、電子輸送層と本発明の芳香族アミン誘導体を含む溶液を接触させることにより、電子輸送層と光吸収層との界面に本発明の芳香族アミン誘導体が導入されている、または、光吸収層と本発明の芳香族アミン誘導体を含む溶液を接触させることにより、光吸収層と正孔輸送層との界面に本発明の芳香族アミン誘導体が導入されている光電変換素子が挙げられる。また、電子輸送層と本発明の芳香族アミン誘導体を含む溶液を接触させることにより、電子輸送層と光吸収層との界面に本発明の芳香族アミン誘導体が導入され、さらに、光吸収層と本発明の芳香族アミン誘導体を含む溶液を接触させることにより、光吸収層と正孔輸送層との界面にも本発明の芳香族アミン誘導体が導入されている光電変換素子も挙げられる。
本発明の光電変換素子は、例えば、ペロブスカイト型太陽電池、フォトダイオード、光センサなどに用いることができる。
(Photoelectric conversion element)
The aromatic amine derivative of this invention can be used as a compound introduce | transduced into the laminated material interface of a photoelectric conversion element. The photoelectric conversion device of the present invention may have the structure of a general photoelectric conversion device except that the aromatic amine derivative of the present invention is introduced to the interface of the laminated material. Specifically, for example, a first electrode having an electron transport layer on a conductive support and having a light absorbing layer containing a perovskite compound on the electron transport layer, and a second electrode (counter electrode) facing the first electrode And a solution containing the aromatic amine derivative of the present invention is brought into contact with the electron transporting layer to form an aromatic amine derivative of the present invention at the interface between the electron transporting layer and the light absorbing layer. The aromatic amine derivative of the present invention is introduced at the interface between the light absorption layer and the hole transport layer by bringing the light absorption layer into contact with a solution containing the aromatic amine derivative of the present invention. Photoelectric conversion elements. Further, by bringing the electron transport layer into contact with a solution containing the aromatic amine derivative of the present invention, the aromatic amine derivative of the present invention is introduced to the interface between the electron transport layer and the light absorption layer. The photoelectric conversion element by which the aromatic amine derivative of this invention is introduce | transduced also to the interface of a light absorption layer and a positive hole transport layer by contacting the solution containing the aromatic amine derivative of this invention is also mentioned.
The photoelectric conversion element of the present invention can be used, for example, in a perovskite solar cell, a photodiode, an optical sensor, and the like.
本発明の光電変換素子は、積層材料界面に本発明の芳香族アミン誘導体を導入する以外は、通常の光電変換素子の製造方法により製造することができる。積層材料界面に本発明の芳香族アミン誘導体を導入するには、本発明の芳香族アミン誘導体を含有する液を用いる。この液は、液状の本発明の芳香族アミン誘導体自体であってもよく、本発明の芳香族アミン誘導体を含有する溶液でも懸濁液（分散液）であってもよい。溶媒または分散媒は、本発明の芳香族アミン誘導体を溶解または分散でき、積層材料を溶解しないものであれば特に限定されず、例えば、クロロベンゼン、イソプロパノールおよびこれらの混合液を好ましく用いることができる。本発明の芳香族アミン誘導体の液中の濃度は、特に限定されないが、例えば、1〜500mMが好ましく、10〜100mMがより好ましい。
調製した液を電子輸送層または光吸収層の表面に接触させる方法は、特に限定されず、例えば、電子輸送層または光吸収層の表面に液を塗布する方法が挙げられる。塗布方法としては、特に限定されないが、例えばスピンコート法、スクリーン印刷法、浸漬法などが挙げられる。
塗布の温度は、0〜50℃であることが好ましい。
塗布後は、液を乾燥することが好ましい。乾燥条件は、特に限定されない。乾燥温度は、例えば、20〜150℃が好ましく、20〜70℃がより好ましい。乾燥時間は、例えば、1分〜5時間が好ましく、3分〜1時間がより好ましい。
電子輸送層または光吸収層の表面上の本発明の芳香族アミン誘導体の存在量は、芳香族アミン誘導体の種類、目的とする性能等に応じて適宜調整でき、特に限定されないが、例えば、0.001mg/m2〜100g/m2が好ましく、0.01mg/m2〜10g/m2がより好ましい。
The photoelectric conversion device of the present invention can be manufactured by a general method of manufacturing a photoelectric conversion device except that the aromatic amine derivative of the present invention is introduced to the interface of the laminated material. In order to introduce the aromatic amine derivative of the present invention to the laminated material interface, a liquid containing the aromatic amine derivative of the present invention is used. This liquid may be the liquid aromatic amine derivative of the present invention itself, or may be a solution containing the aromatic amine derivative of the present invention or a suspension (dispersion liquid). The solvent or dispersion medium is not particularly limited as long as it can dissolve or disperse the aromatic amine derivative of the present invention and does not dissolve the laminated material, and, for example, chlorobenzene, isopropanol and a mixture thereof can be preferably used. The concentration of the aromatic amine derivative of the present invention in the liquid is not particularly limited, but is preferably 1 to 500 mM, more preferably 10 to 100 mM.
The method for bringing the prepared solution into contact with the surface of the electron transporting layer or the light absorbing layer is not particularly limited, and examples thereof include a method of applying the solution to the surface of the electron transporting layer or the light absorbing layer. The coating method is not particularly limited, and examples thereof include spin coating, screen printing, and immersion.
It is preferable that the temperature of application | coating is 0-50 degreeC.
After application, the solution is preferably dried. The drying conditions are not particularly limited. 20-150 degreeC is preferable, for example, and, as for drying temperature, 20-70 degreeC is more preferable. The drying time is, for example, preferably 1 minute to 5 hours, and more preferably 3 minutes to 1 hour.
The amount of the aromatic amine derivative of the present invention present on the surface of the electron transporting layer or the light absorbing layer can be appropriately adjusted according to the type of the aromatic amine derivative, the intended performance, etc. preferably mg / m 2 ~100g / m 2 , more preferably 0.01mg / m 2 ~10g / m 2 .
（ペロブスカイト型太陽電池）
本発明の芳香族アミン誘導体は、例えばペロブスカイト型太陽電池の積層材料界面に導入する化合物として用いることが出来る。本発明のペロブスカイト型太陽電池は、積層材料界面に本発明の芳香族アミン誘導体を導入する以外は、通常のペロブスカイト型太陽電池の構造を有するものであってよい。すなわち、導電性支持体、n型バッファ層（電子輸送層）、ペロブスカイト層（光吸収層）、p型バッファ層（正孔輸送層）、および対極は周知のものを用いることが出来る。本発明のペロブスカイト型太陽電池は、積層材料界面に本発明の芳香族アミン誘導体を導入する以外は、通常のペロブスカイト型太陽電池の製
造方法により製造することができる。
(Perovskite solar cells)
The aromatic amine derivative of the present invention can be used, for example, as a compound to be introduced to the interface of the laminated material of a perovskite solar cell. The perovskite-type solar cell of the present invention may have the structure of a normal perovskite-type solar cell, except that the aromatic amine derivative of the present invention is introduced at the laminated material interface. That is, the conductive support, the n-type buffer layer (electron transport layer), the perovskite layer (light absorption layer), the p-type buffer layer (hole transport layer), and the counter electrode can be known ones. The perovskite-type solar cell of the present invention can be manufactured by a general method of manufacturing a perovskite-type solar cell except that the aromatic amine derivative of the present invention is introduced to the laminated material interface.
本発明の芳香族アミン誘導体を用いた本発明のペロブスカイト型太陽電池は、導電性支持体上に形成された、n型バッファ層（電子輸送層）、ペロブスカイト層（光吸収層）、p型バッファ層（正孔輸送層）、対極が順次積層されて構成され、ペロブスカイト層の片側または両側の積層材料界面に、本発明の芳香族アミン誘導体が導入されている。 The perovskite type solar cell of the present invention using the aromatic amine derivative of the present invention comprises an n-type buffer layer (electron transport layer), a perovskite layer (light absorption layer) and a p-type buffer formed on a conductive support. A layer (hole transport layer) and a counter electrode are sequentially laminated and configured, and the aromatic amine derivative of the present invention is introduced to the laminated material interface on one side or both sides of the perovskite layer.
導電性支持体としては、表面に導電層を有するガラスまたはプラスチックなどを好適に用いることができる。導電層としては、金、白金、銀、銅、インジウムなどの金属、導電性カーボン、またはインジウム錫複合化合物、酸化錫にフッ素をドープしたものなどが挙げられる。これらの導電材料を用いて、常法により支持体表面に導電層を形成することができる。また、導電性支持体を受光面とする場合は透明であることが好ましい。 As the conductive support, glass or plastic having a conductive layer on the surface can be suitably used. Examples of the conductive layer include metals such as gold, platinum, silver, copper and indium, conductive carbon, an indium tin complex compound, and tin oxide doped with fluorine. These conductive materials can be used to form a conductive layer on the surface of a support by a conventional method. Moreover, when using a conductive support body as a light-receiving surface, it is preferable that it is transparent.
n型バッファ層を構成する材料は特に限定されず、例えば、酸化チタン、酸化ニオブ、酸化亜鉛、酸化スズ、酸化タングステン、酸化インジウムなどを挙げることができる。これらのうち好ましくは酸化チタン、酸化ニオブ、酸化スズであり、特に好ましくは酸化チタンである。n型バッファ層の形成方法は問わないが、例えば、スプレー熱分解法による製膜、またはn型バッファ層となるべき酸化物の微粒子を形成し、これを適当な溶媒に懸濁させて透明導電性ガラスの上に塗布し、溶媒を除去した後に加熱する方法による製造などが挙げられる。 The material which comprises an n-type buffer layer is not specifically limited, For example, a titanium oxide, a niobium oxide, a zinc oxide, a tin oxide, a tungsten oxide, an indium oxide etc. can be mentioned. Among these, preferred are titanium oxide, niobium oxide and tin oxide, and particularly preferred is titanium oxide. There is no limitation on the method of forming the n-type buffer layer, but, for example, film formation by spray pyrolysis or fine particles of oxide to be an n-type buffer layer are formed and suspended in an appropriate solvent to conduct transparent conductivity. And the like, and it is produced by a method of heating after removing the solvent and the like.
ペロブスカイト層としては、組成式AMB3で示されるペロブスカイト化合物を少なくとも一種含有していればよく、二種以上のペロブスカイト化合物を含有していてもよい。光吸収層は単層であっても二層以上の積層であってもよい。二層以上の積層構造である場合は、それぞれの層の間に正孔輸送材料などの中間層を積層してもよい。Aは1価のカチオンであり、例えばメチルアンモニウムカチオン、ホルムアミジニウムカチオン、アルカリ金属カチオンが挙げられる。Mは２価のカチオンであり、例えば鉛カチオン、ゲルマニウムカチオン、スズカチオンなどが挙げられる。Bはハロゲンアニオンなどの１価のアニオンである。ペロブスカイト層は、溶液による塗布法や、共蒸着法などにより形成することが出来る。 The perovskite layer may contain at least one kind of perovskite compound represented by the composition formula AMB 3 and may contain two or more kinds of perovskite compounds. The light absorbing layer may be a single layer or a laminate of two or more layers. In the case of a laminated structure of two or more layers, an intermediate layer such as a hole transport material may be laminated between the respective layers. A is a monovalent cation, and examples thereof include methyl ammonium cation, formamidinium cation and alkali metal cation. M is a divalent cation such as lead cation, germanium cation, tin cation and the like. B is a monovalent anion such as a halogen anion. The perovskite layer can be formed by a coating method using a solution, a co-evaporation method, or the like.
p型バッファ層を構成する材料は特に限定されず、例えば、p型低分子有機半導体、p型導電性高分子、p型無機材料などを挙げることが出来る。具体的には例えば、2,2',7,7'-テトラキス（N,N-ジ-p-メトキシフェニルアミノ）-9,9'-スピロビフルオレン（Spiro-OMeTAD）、ポリ（3−ヘキシルチオフェン‐2,5−ジイル）（P3HT）、ポリ（3,4−エチレンジオキシチオフェン）（PEDOT）、ポリ［ビス（4−フェニル）（2,4,6−トリメチルフェニル）アミン］（PTAA）、ヨウ化銅、チオシアン酸銅などが挙げられる。p型バッファ層は、材料に応じて周知の製膜方法を用いて形成することが出来る。 The material which comprises a p-type buffer layer is not specifically limited, For example, a p-type low molecular organic semiconductor, a p-type conductive polymer, a p-type inorganic material etc. can be mentioned. Specifically, for example, 2,2 ′, 7,7′-tetrakis (N, N-di-p-methoxyphenylamino) -9,9′-spirobifluorene (Spiro-OMeTAD), poly (3-hexyl) Thiophene-2,5-diyl) (P3HT), poly (3,4-ethylenedioxythiophene) (PEDOT), poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) , Copper iodide, copper thiocyanate and the like. The p-type buffer layer can be formed using a known film forming method depending on the material.
対極は導電性を有している限り特に制限はないが、例えば、金、銀、白金、パラジウム、ロジウム、タングステン、モリブテン、タンタル、チタン、ニオビウムなどが挙げられる。これらの導電材料を用いて、常法により対極を形成することが出来る。 The counter electrode is not particularly limited as long as it has conductivity, and examples thereof include gold, silver, platinum, palladium, rhodium, tungsten, molybdenum, tantalum, titanium, niobium and the like. A counter electrode can be formed by a conventional method using these conductive materials.
光電変換素子および太陽電池の製造方法に使用する溶媒または分散媒としては、メタノール、エタノール、n-プロパノール、イソプロパノール、n-ブタノール、t-ブタノールなどのアルコール溶媒、クロロホルム、アセトン、アセトニトリル、テトラヒドロフラン、ジメチルスルホキシド、ジメチルホルムアミド、ベンゼン、トルエン、キシレン、クロロベンゼン、ジクロロベンゼンなどの有機溶媒、ならびに、それらの混合溶媒である。好ましくは、イソプロパノール−クロロベンゼン混合溶媒である。 As a solvent or dispersion medium used for the manufacturing method of a photoelectric conversion element and a solar cell, alcohol solvents, such as methanol, ethanol, n-propanol, isopropanol, n-butanol, t-butanol, chloroform, acetone, acetonitrile, tetrahydrofuran, dimethyl Organic solvents such as sulfoxide, dimethylformamide, benzene, toluene, xylene, chlorobenzene and dichlorobenzene, and mixed solvents thereof. Preferably, it is an isopropanol-chlorobenzene mixed solvent.
以下に、本発明について実施例を用いてさらに詳しく説明するが、本発明はこれら実施例に限定されるものではない。 EXAMPLES Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.
＜実施例１＞
4−（ジフェニルアミノ）フェニルボロン酸（1 g）、4−ブロモベンジルアミン（0.536
g）、テトラキス（トリフェニルホスフィン）パラジウム（0.167 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、0.898 gの骨格となる芳香族アミン誘導体を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１」という。化合物１の1H-NMRとESI-MS分析値を以下に示す。
Example 1
4- (diphenylamino) phenylboronic acid (1 g), 4-bromobenzylamine (0.536)
g) Dissolve tetrakis (triphenylphosphine) palladium (0.167 g) in 1,2-dimethoxyethane (10 mL). To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 0.898 g of a skeleton aromatic amine derivative. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 1". The 1 H-NMR and ESI-MS analytical values of Compound 1 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.55 (2H, d, J 8.3), 7.47 (2H, d, J 8.7), 7.36
(2H, d, J 8.3), 7.28-7.25 (4H, m), 7.14-7.11 (6H, m), 7.03 (2H, t, J 7.3), 3.91
(2H, s)。
ESI-MS: m/z = 351.3 [M]+, 334.3 [M-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.55 (2H, d, J 8.3), 7.47 (2H, d, J 8.7), 7.36
(2H, d, J 8.3), 7.28-7.25 (4H, m), 7.14-7. 11 (6H, m), 7.03 (2H, t, J 7.3), 3.91
(2H, s).
ESI-MS: m / z = 351.3 [M] +, 334.3 [M-NH 2] +.
化合物１（0.898 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（0.334 mL）と水（0.3 mL）に加え、攪拌する。反応混合物を室温にした後、メタノールを加え、ろ過する。得られた固体をメタノールに溶解し、ジエチルエーテル中に投入し、得られた固体をろ過すると0.561 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物２」という。化合物２の1H-NMRとESI-MS分析値を以下に示す。 Compound 1 (0.898 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (0.334 mL) and water (0.3 mL) and stirred. After the reaction mixture is brought to room temperature, methanol is added and filtered. The resulting solid was dissolved in methanol and poured into diethyl ether, and the resulting solid was filtered to give 0.561 g of product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 2". The 1 H-NMR and ESI-MS analytical values of Compound 2 are shown below.
1H NMR (500 MHz, CD3OD, Me4Si): δ7.69 (2H, d, J 8.2), 7.55 (2H, d, J 8.7), 7.50
(2H, d, J 8.2), 7.28 (4H, dd, J 8.5, 7.4), 7.09-7.04 (8H, m), 4.14 (2H, s)。
ESI-MS: m/z = 351.3 [M-I]+, 334.3 [M-I-NH2]+
1 H NMR (500 MHz, CD 3 OD, Me 4 Si): δ 7.69 (2H, d, J 8.2), 7.55 (2H, d, J 8.7), 7.50
(2H, d, J 8.2), 7.28 (4H, dd, J 8.5, 7.4), 7.09-7.04 (8H, m), 4.14 (2H, s).
ESI-MS: m / z = 351.3 [MI] + , 334.3 [MI-NH 2 ] +
＜実施例２＞
4−（ジフェニルアミノ）フェニルボロン酸（1 g）、3−ブロモベンジルアミン（0.536
g）、テトラキス（トリフェニルホスフィン）パラジウム（0.167 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、0.923 gの骨格となる芳香族アミン誘導体を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物３」という。化合物３の1H-NMRとESI-MS分析値を以下に示す。
Example 2
4- (diphenylamino) phenylboronic acid (1 g), 3-bromobenzylamine (0.536)
g) Dissolve tetrakis (triphenylphosphine) palladium (0.167 g) in 1,2-dimethoxyethane (10 mL). To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 0.923 g of a skeleton aromatic amine derivative. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 3". The 1 H-NMR and ESI-MS analytical values of Compound 3 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.51 (1H, s), 7.47 (2H, d, J 8.7), 7.37 (1H, t, J 7.6), 7.26-7.24 (5H, m), 7.13-7.11 (6H, m), 7.02 (2H, td, J 7.4, 0.9), 3.92 (2H, s)。
ESI-MS: m/z = 351.3 [M]+, 334.3 [M-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.51 (1 H, s), 7.47 (2 H, d, J 8.7), 7.37 (1 H, t, J 7.6), 7.26-7.24 (5 H, m), 7.13-7.11 (6H, m), 7.02 (2H, td, J 7.4, 0.9), 3.92 (2H, s).
ESI-MS: m / z = 351.3 [M] +, 334.3 [M-NH 2] +.
化合物３（0.907 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（0.285 mL）と水（0.3 mL）に加え、攪拌する。反応混合物を室温にした後、メタノールを加え、ろ過する。ろ液の溶媒を留去した後、ジクロロメタンとヘキサンの混合溶媒で再結晶すると0.497 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物４」という。化合物４の1H-NMRとESI-MS分析値を以下に示す。 Compound 3 (0.907 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (0.285 mL) and water (0.3 mL) and stirred. After the reaction mixture is brought to room temperature, methanol is added and filtered. After evaporating the solvent of the filtrate, recrystallization with a mixed solvent of dichloromethane and hexane gave 0.497 g of a product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 4". The 1 H-NMR and ESI-MS analytical values of Compound 4 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.70 (1H, s), 7.48-7.45 (3H, m), 7.40 (1H, d, J 7.6), 7.32 (1H, t, J 7.6), 7.21 (4H, t, J 7.4), 7.07-7.04 (6H, m), 7.00 (2H, td, J 7.4, 1.0), 4.17 (2H, s)。
ESI-MS: m/z = 351.1 [M-I]+, 334.1 [M-I-NH2]+
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.70 (1 H, s), 7. 48-7. 45 (3 H, m), 7. 40 (1 H, d, J 7.6), 7.32 (1 H, t, J 7.6), 7.21 (4H, t, J 7.4), 7.07-7.04 (6H, m), 7.00 (2H, td, J 7.4, 1.0), 4.17 (2H, s).
ESI-MS: m / z = 351.1 [MI] + , 334.1 [MI-NH 2 ] +
＜実施例３＞
N,N−ビス（4−メトキシフェニル）−4−（5,5−ジメチル−1,3,2ジオキサボラン−2−イル）アニリン（0.3 g）、4−ブロモベンジルアミン（0.111 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.0344 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、0.241 gの骨格となる芳香族アミン誘導体を得た。1H-NMRとESI-MS
で分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物５」という。化合物５の1H-NMRとESI-MS分析値を以下に示す。
Example 3
N, N-bis (4-methoxyphenyl) -4- (5,5-dimethyl-1,3,2 dioxaborane-2-yl) aniline (0.3 g), 4-bromobenzylamine (0.111 g), tetrakis Triphenylphosphine) palladium (0.0344 g) is dissolved in 1,2-dimethoxyethane (10 mL). To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 0.241 g of a skeleton aromatic amine derivative. 1 H-NMR and ESI-MS
It was found that this product was one represented by the following formula. This product is referred to as "compound 5". The 1 H-NMR and ESI-MS analytical values of Compound 5 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.52 (2H, d, J 8.1), 7.40 (2H, d, J 8.8), 7.34
(2H, d, J 8.1), 7.09 (4H, d, J 9.0), 6.98 (2H, d, J 8.8), 6.84 (4H, d, J 9.0), 3.80 (6H, s), 3.52 (2H, s)。
ESI-MS: m/z = 410.2 [M]+, 394.2 [M-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.52 (2 H, d, J 8.1), 7. 40 (2 H, d, J 8.8), 7.34
(2H, d, J 8.1), 7.09 (4 H, d, J 9.0), 6.98 (2 H, d, J 8.8), 6.84 (4 H, d, J 9.0), 3.80 (6 H, s), 3.52 (2 H, s).
ESI-MS: m / z = 410.2 [M] +, 394.2 [M-NH 2] +.
化合物５（0.220 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（0.106mL）と水（0.5 mL）に加え、攪拌する。反応混合物を室温にした後、溶媒を除去し、残渣をカラムクロマトグラフィーで精製し、0.173 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物６」という。化合物６の1H-NMRとESI-MS分析値を以下に示す。 Compound 5 (0.220 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (0.106 mL) and water (0.5 mL) and stirred. After the reaction mixture was brought to room temperature, the solvent was removed and the residue was purified by column chromatography to obtain 0.173 g of product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 6". The 1 H-NMR and ESI-MS analytical values of Compound 6 are shown below.
1H NMR (500 MHz, CD3OD, Me4Si): δ7.64 (2H, d, J 8.2), 7.47-7.44 (4H, m), 7.04 (4H, d, J 8.9), 6.93 (2H, d, J 8.6), 6.89 (4H, d, J 8.9), 4.12 (2H, s), 3.79 (6H,
s)。
ESI-MS: m/z = 411.2 [M-I]+, 394.2 [M-I-NH2]+
1 H NMR (500 MHz, CD 3 OD, Me 4 Si): δ 7.64 (2 H, d, J 8.2), 7.47-7.44 (4 H, m), 7.04 (4 H, d, J 8.9), 6.93 (2 H , d, J 8.6), 6.89 (4H, d, J 8.9), 4.12 (2H, s), 3.79 (6H, 6)
s).
ESI-MS: m / z = 411.2 [MI] + , 394.2 [MI-NH 2 ] +
＜実施例４＞
N,N−ビス（4−メトキシフェニル）−4−（5,5−ジメチル−1,3,2−ジオキサボラン−2−イル）アニリン（1.08 g）、3−ブロモベンジルアミン（0.4 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.124 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、0.782 gの骨格となる芳香族アミン誘導体を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物７」という。化合物７の1H-NMRとESI-MS分析値を以下に示す。
Example 4
N, N-bis (4-methoxyphenyl) -4- (5,5-dimethyl-1,3,2-dioxaboran-2-yl) aniline (1.08 g), 3-bromobenzylamine (0.4 g), tetrakis Dissolve (triphenylphosphine) palladium (0.124 g) in 1,2-dimethoxyethane (10 mL). To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 0.782 g of a skeleton aromatic amine derivative. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 7". The 1 H-NMR and ESI-MS analytical values of Compound 7 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.49 (1H, s), 7.44-7.40 (3H, m), 7.37 (1H, t, J 7.6), 7.24 (1H, d, J 7.6), 7.08 (4H, d, J 9.0), 6.98 (2H, d, J 8.8), 6.84 (4H,
d, J 9.0), 3.92 (2H, s), 3.80 (6H, s)。
ESI-MS: m/z = 411.2 [M+H]+, 394.2 [M-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.49 (1 H, s), 7.44-4.40 (3 H, m), 7.37 (1 H, t, J 7.6), 7.24 (1 H, d, J 7.6), 7.08 (4H, d, J 9.0), 6.98 (2H, d, J 8.8), 6.84 (4H,
d, J 9.0), 3.92 (2H, s), 3.80 (6H, s).
ESI-MS: m / z = 411.2 [M + H] +, 394.2 [M-NH 2] +.
化合物７（0.75 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（0.362mL）と水（1 mL）に加え、攪拌する。反応混合物を室温にした後、溶媒を除去し、残渣をアセトンに溶解しジエチルエーテルに投入する。得られた固体をろ過し、0.827 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物８」という。化合物８の1H-NMRとESI-MS分析値を以下に示す。 Compound 7 (0.75 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (0.362 mL) and water (1 mL) and stirred. After bringing the reaction mixture to room temperature, the solvent is removed and the residue is dissolved in acetone and poured into diethyl ether. The resulting solid was filtered to give 0.827 g of product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 8". The 1 H-NMR and ESI-MS analytical values of Compound 8 are shown below.
1H NMR (500 MHz, CD3OD, Me4Si): δ7.66 (1H, s), 7.63 (1H, d, J 7.8), 7.49-7.46 (3H, m), 7.34 (1H, d, J 7.6), 7.04 (4H, d, J 9.0), 6.94 (2H, d, J 8.8), 6.89 (4H,
d, J 9.0), 4.16 (2H, s), 3.79 (6H, s)。
ESI-MS: m/z = 411.2 [M-I]+, 394.2 [M-I-NH2]+。
1 H NMR (500 MHz, CD 3 OD, Me 4 Si): δ 7.66 (1 H, s), 7.63 (1 H, d, J 7.8), 7.49-7.46 (3 H, m), 7.34 (1 H, d, J 7.6), 7.04 (4H, d, J 9.0), 6.94 (2H, d, J 8.8), 6.89 (4H,
d, J 9.0), 4.16 (2H, s), 3.79 (6H, s).
ESI-MS: m / z = 411.2 [MI] +, 394.2 [MI-NH 2] +.
＜実施例５＞
N,N−ビス（4−ヘキシルオキシフェニル）−4−（5,5−ジメチル−1,3,2−ジオキサボラン−2−イル）アニリン（1.5 g）、4−ブロモベンジルアミン（0.417 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.13 g）を1,2−ジメトキシエタン（30 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（30 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、1.18 gの骨格となる芳香族アミン誘導体を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物９」という。化合物９の1H-NMRとESI-MS分析値を以下に示す。
Example 5
N, N-bis (4-hexyloxyphenyl) -4- (5,5-dimethyl-1,3,2-dioxaboran-2-yl) aniline (1.5 g), 4-bromobenzylamine (0.417 g), Dissolve tetrakis (triphenylphosphine) palladium (0.13 g) in 1,2-dimethoxyethane (30 mL). To this mixture is added 2 M aqueous sodium carbonate solution (30 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 1.18 g of a skeleton aromatic amine derivative. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 9". The 1 H-NMR and ESI-MS analytical values of Compound 9 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.51 (2H, d, J 8.0), 7.39 (2H, d, J 8.5), 7.33
(2H, d, J 8.0), 7.06 (4H, d, J 8.9), 6.97 (2H, d, J 8.5), 6.82 (4H, d, J 8.9), 3.93 (4H, t, J 6.6), 3.88 (2H, s), 1.80-1.74 (4H, m), 1.49-1.43 (4H, m), 1.36-1.34 (8H, m), 0.93-0.90 (6H, m)。
ESI-MS: m/z = 551.5 [M+H]+, 534.4 [M-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.51 (2 H, d, J 8.0), 7. 39 (2 H, d, J 8.5), 7.33
(2H, d, J 8.0), 7.06 (4H, d, J 8.9), 6.97 (2H, d, J 8.5), 6.82 (4H, d, J 8.9), 3.93 (4H, t, J 6.6), 3.88 (2H, s), 1.80-1.74 (4H, m), 1.49-1.43 (4H, m), 1.36-1.34 (8H, m), 0.93-0.90 (6H, m).
ESI-MS: m / z = 551.5 [M + H] +, 534.4 [M-NH 2] +.
化合物９（0.946 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（0.34 mL）と水（1 mL）に加え、攪拌する。反応混合物を室温にした後、溶媒を除去し、カラムクロマトグラフィーで精製し、0.959 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１０」という。化合物１０の1H-NMRとESI-MS分析値を以下に示す。 Compound 9 (0.946 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cooled hydroiodic acid (0.34 mL) and water (1 mL) and stirred. After the reaction mixture was brought to room temperature, the solvent was removed and purified by column chromatography to obtain 0.959 g of the product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 10". The 1 H-NMR and ESI-MS analytical values of Compound 10 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.51 (2H, d, J 8.2), 7.46 (2H, d, J 8.2), 7.32
(2H, d, J 8.6), 7.02 (4H, d, J 8.8), 6.92 (2H, d, J 8.6), 6.80 (4H, d, J 8.8), 4.09 (2H, s), 3.92 (4H, t, J 6.6), 1.79-1.73 (4H, m), 1.49-1.43 (4H, m), 1.37-1.33 (8H, m), 0.92-0.89 (6H, m)。
ESI-MS: m/z = 551.4 [M-I]+, 534.4 [M-I-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.51 (2 H, d, J 8.2), 7.46 (2 H, d, J 8.2), 7.32
(2H, d, J 8.6), 7.02 (4H, d, J 8.8), 6.92 (2H, d, J 8.6), 6.80 (4H, d, J 8.8), 4.09 (2H, s), 3.92 (4H, s) t, J 6.6), 1.79-1.73 (4H, m), 1.49-1.43 (4H, m), 1.37-1.33 (8H, m), 0.92-0.89 (6H, m).
ESI-MS: m / z = 551.4 [MI] +, 534.4 [MI-NH 2] +.
＜実施例６＞
N,N−ビス（4−ヘキシルオキシフェニル）−4−（5,5−ジメチル−1,3,2−ジオキサボラン−2−イル）アニリン（1.5 g）、3−ブロモベンジルアミン（0.417 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.13 g）を1,2−ジメトキシエタン（30 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（30 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、0.871 gの骨格となる芳香族アミン誘導体を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１１」という。化合物１１の1H-NMRとESI-MS分析値を以下に示す。
Example 6
N, N-bis (4-hexyloxyphenyl) -4- (5,5-dimethyl-1,3,2-dioxaboran-2-yl) aniline (1.5 g), 3-bromobenzylamine (0.417 g), Dissolve tetrakis (triphenylphosphine) palladium (0.13 g) in 1,2-dimethoxyethane (30 mL). To this mixture is added 2 M aqueous sodium carbonate solution (30 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 0.871 g of a skeleton aromatic amine derivative. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 11". The 1 H-NMR and ESI-MS analytical values of Compound 11 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.48 (1H, s), 7.43-7.39 (3H, m), 7.36 (1H, t, J 7.7), 7.22 (1H, d, J 7.7), 7.06 (4H, d, J 9.0), 6.97 (2H, d, J 8.7), 6.82 (4H,
d, J 9.0), 3.93 (4H, t, J 6.6), 3.91 (2H, s), 1.80-1.74 (4H, m), 1.49-1.43 (4H,
m), 1.36-1.32 (8H, m), 0.92-0.90 (6H, m)。
ESI-MS: m/z = 551.5 [M+H]+, 534.5 [M-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.48 (1 H, s), 7.43-7. 39 (3 H, m), 7. 36 (1 H, t, J 7.7), 7.22 (1 H, d, J 7.7), 7.06 (4H, d, J 9.0), 6.97 (2H, d, J 8.7), 6.82 (4H,
d, J 9.0), 3.93 (4H, t, J 6.6), 3.91 (2H, s), 1.80-1.74 (4H, m), 1.49-1.43 (4H,
m), 1.36 to 1.32 (8 H, m), 0.92 to 0.90 (6 H, m).
ESI-MS: m / z = 551.5 [M + H] +, 534.5 [M-NH 2] +.
化合物１１（0.7 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（0.909 mL）と水（0.2 mL）に加え、攪拌する。反応混合物を室温にした後、水に投入し、ろ過する。得られた固体をカラムクロマトグラフィーで精製し、0.656 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１２」という。化合物１２の1H-NMRとESI-MS分析値を以下に示す。 Compound 11 (0.7 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (0.909 mL) and water (0.2 mL) and stirred. The reaction mixture is brought to room temperature, then poured into water and filtered. The resulting solid was purified by column chromatography to give 0.656 g of product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 12". The 1 H-NMR and ESI-MS analytical values of Compound 12 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.68 (1H, s), 7.48 (1H, d, J 7.7), 7.41 (2H, d, J 8.6), 7.37 (1H, d, J 7.7), 7.32 (1H, t, J 7.7), 7.00 (4H, d, J 8.9), 6.92 (2H, d, J 8.6), 6.79 (4H, d, J 8.9), 4.18 (2H, s), 3.91 (4H, t, J 6.6), 1.78-1.73 (4H, m), 1.48-1.42 (4H, m), 1.36-1.32 (8H, m), 0.92-0.89 (6H, m)。
ESI-MS: m/z = 551.5 [M-I]+, 534.4 [M-I-NH2]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.68 (1 H, s), 7. 48 (1 H, d, J 7.7), 7.41 (2 H, d, J 8.6), 7. 37 (1 H, d, J 7.7), 7.32 (1 H, t, J 7.7), 7.00 (4 H, d, J 8.9), 6. 92 (2 H, d, J 8.6), 6. 79 (4 H, d, J 8.9), 4.18 (2 H, s) , 3.91 (4H, t, J6.6), 1.78-1.73 (4H, m), 1.48-1.42 (4H, m), 1.36-1.32 (8H, m), 0.92-0.89 (6H, m).
ESI-MS: m / z = 551.5 [MI] +, 534.4 [MI-NH 2] +.
＜実施例７＞
4−（ジフェニルアミノ）フェニルボロン酸（1 g）、4−ブロモベンズアミジン塩酸塩（0.679 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.167 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水と酢酸エチルを加え、分液する。有機層を濃縮後の残渣を再結晶し、0.639gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式（１８）で表されるものであることがわかった。この生成物を、「化合物１３」という。化合物１３の1H-NMRとESI-MS分析値を以下に示す。
Example 7
Dissolve 4- (diphenylamino) phenylboronic acid (1 g), 4-bromobenzamidine hydrochloride (0.679 g), tetrakis (triphenylphosphine) palladium (0.167 g) in 1,2-dimethoxyethane (10 mL) Do. To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and ethyl acetate are added, and the mixture is separated. The residue after concentration of the organic layer was recrystallized to give 0.639 g of the product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula (18). This product is referred to as "compound 13". The 1 H-NMR and ESI-MS analytical values of Compound 13 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.86 (2H, d, J 8.5), 7.65 (2H, d, J 8.5), 7.50
(2H, d, J 8.7), 7.28 (4H, dd, J 8.5, 7.4), 7.15-7.13 (6H, m), 7.06 (2H, t, J 7.4)。
ESI-MS: m/z = 364.1 [M-Cl]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.86 (2H, d, J 8.5), 7.65 (2H, d, J 8.5), 7.50
(2H, d, J 8.7), 7.28 (4 H, dd, J 8.5, 7.4), 7.15-7.13 (6 H, m), 7.06 (2 H, t, J 7.4).
ESI-MS: m / z = 364.1 [M-Cl] <+> .
＜実施例８＞
化合物１３（0.4 g）をヨウ化水素酸（2.65 mL）とエタノール（20 mL）に加え、攪拌する。反応混合物を室温にした後、水に投入し、得られた固体をろ過し、0.176 g生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１４」という。化合物１４の1H-NMRとESI-MS分析値を以下に示す。
Example 8
Compound 13 (0.4 g) is added to hydroiodic acid (2.65 mL) and ethanol (20 mL) and stirred. The reaction mixture was brought to room temperature and then poured into water and the resulting solid filtered to give 0.176 g product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 14". The 1 H-NMR and ESI-MS analytical values of Compound 14 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.86 (2H, d, J 8.3), 7.65 (2H, d, J 8.3), 7.50
(2H, d, J 8.6), 7.28 (4H, dd, J 8.3, 7.4), 7.15-7.13 (6H, m), 7.06 (2H, t, J 7.4)。
ESI-MS: m/z = 364.3 [M-I]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.86 (2H, d, J 8.3), 7.65 (2H, d, J 8.3), 7.50
(2H, d, J 8.6), 7.28 (4 H, dd, J 8.3, 7.4), 7.15-7.13 (6 H, m), 7.06 (2 H, t, J 7.4).
ESI-MS: m / z = 364.3 [MI] <+> .
＜実施例９＞
N,N−ビス（4−メトキシフェニル）−4−（5,5−ジメチル−1,3,2−ジオキサボラン−2−イル）アニリン（1.06 g）、4−ブロモベンズアミジン塩酸塩（0.5 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.123 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製する。得られた固体をジクロロメタンに溶解し、ヘキサンに投入する。得られた固体をろ過し、0.721 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１５」という。化合物１５の1H-NMRとESI-MS分析値を以下に示す。
Example 9
N, N-bis (4-methoxyphenyl) -4- (5,5-dimethyl-1,3,2-dioxaboran-2-yl) aniline (1.06 g), 4-bromobenzamidine hydrochloride (0.5 g) Dissolve tetrakis (triphenylphosphine) palladium (0.123 g) in 1,2-dimethoxyethane (10 mL). To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer is purified by column chromatography. The resulting solid is dissolved in dichloromethane and poured into hexane. The resulting solid was filtered to give 0.721 g of product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 15." The 1 H-NMR and ESI-MS analytical values of Compound 15 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.83 (2H, d, J 8.2), 7.61 (2H, d, J 8.2), 7.43
(2H, d, J 8.7), 7.09 (4H, d, J 9.0), 6.97 (2H, d, J 8.7), 6.85 (4H, d, J 9.0), 3.80 (6H, s)。
ESI-MS: m/z = 425.2 [M-Cl]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.83 (2H, d, J 8.2), 7.61 (2H, d, J 8.2), 7.43
(2H, d, J 8.7), 7.09 (4H, d, J 9.0), 6.97 (2H, d, J 8.7), 6.85 (4H, d, J 9.0), 3.80 (6H, s).
ESI-MS: m / z = 425.2 [M-Cl] <+> .
＜実施例１０＞
化合物１５（0.4 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（2.3 mL）に加え、攪拌する。反応混合物を室温にした後、溶媒を10 mLになるまで除去し、水に投入する。得られた固体をろ過し、乾燥後、ジクロロメタンに溶解し、ヘキサンに投入する。得られた固体をろ過し、0.416 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１６」という。化合物１６の1H-NMRとESI-MS分析値を以下に示す。
Example 10
Compound 15 (0.4 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (2.3 mL) and stirred. After the reaction mixture is brought to room temperature, the solvent is removed to 10 mL and poured into water. The resulting solid is filtered and dried, then dissolved in dichloromethane and poured into hexane. The resulting solid was filtered to give 0.416 g of product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 16". The 1 H-NMR and ESI-MS analytical values of Compound 16 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.85 (2H, d, J 8.2), 7.63 (2H, d, J 8.2), 7.43
(2H, d, J 8.6), 7.08 (4H, d, J 8.9), 6.97 (2H, d, J 8.6), 6.85 (4H, d, J 8.9), 3.80 (6H, s)。
ESI-MS: m/z = 425.3 [M-I]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.85 (2H, d, J 8.2), 7.63 (2H, d, J 8.2), 7.43
(2H, d, J 8.6), 7.08 (4 H, d, J 8.9), 6. 97 (2 H, d, J 8.6), 6. 85 (4 H, d, J 8.9), 3. 80 (6 H, s).
ESI-MS: m / z = 425.3 [MI] <+> .
＜実施例１１＞
N,N−ビス（4−ヘキシルオキシフェニル）−4−（5,5−ジメチル−1,3,2−ジオキサボラン−2−イル）アニリン（1.5 g）、4−ブロモベンズアミジン塩酸塩（0.528 g）、テトラキス（トリフェニルホスフィン）パラジウム（0.13 g）を1,2−ジメトキシエタン（10 mL）に溶解する。この混合物に2 Mの炭酸ナトリウム水溶液（10 mL）を加えて加熱還流する。室温まで冷却後、水とジクロロメタンを加え、分液する。有機層を濃縮後の残渣をカラムクロマトグラフィーで精製し、0.781 gの生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１７」という。化合物１７の1H-NMRとESI-MS分析値を以下に示す。
Example 11
N, N-Bis (4-hexyloxyphenyl) -4- (5,5-dimethyl-1,3,2-dioxaboran-2-yl) aniline (1.5 g), 4-bromobenzamidine hydrochloride (0.528 g) ), Tetrakis (triphenylphosphine) palladium (0.13 g) is dissolved in 1,2-dimethoxyethane (10 mL). To this mixture is added 2 M aqueous sodium carbonate solution (10 mL), and the mixture is heated to reflux. After cooling to room temperature, water and dichloromethane are added and separated. The residue after concentration of the organic layer was purified by column chromatography to obtain 0.781 g of a product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 17". The 1 H-NMR and ESI-MS analytical values of Compound 17 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.84 (2H, d, J 8.4), 7.62 (2H, d, J 8.4), 7.43
(2H, d, J 8.8), 7.08 (4H, d, J 9.0), 6.98 (2H, d, J 8.8), 6.84 (4H, d, J 9.0), 3.94 (4H, t, J 6.6), 1.81-1.75 (4H, m), 1.49-1.43 (4H, m), 1.36-1.32 (8H, m), 0.93-0.90 (6H, m)。
ESI-MS: m/z = 665.4 [M-Cl]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.84 (2 H, d, J 8.4), 7.62 (2 H, d, J 8.4), 7.43
(2H, d, J 8.8), 7.08 (4 H, d, J 9.0), 6.98 (2 H, d, J 8.8), 6.84 (4 H, d, J 9.0), 3.94 (4 H, t, J 6.6), 1.81 -1.75 (4H, m), 1.49-1.43 (4H, m), 1.36-1.32 (8H, m), 0.93-0.90 (6H, m).
ESI-MS: m / z = 665.4 [M-Cl] <+> .
＜実施例１２＞
化合物１７（0.41 g）をメタノールとジクロロメタンの混合溶媒に溶解させた後、氷冷したヨウ化水素酸（1.8 mL）に加え、攪拌する。反応混合物を室温にした後、溶媒を除去し、残渣をカラムクロマトグラフィーで精製し、0.356 g生成物を得た。1H-NMRとESI-MSで分析したところ、この生成物は、下記式で表されるものであることがわかった。この生成物を、「化合物１８」という。化合物１８の1H-NMRとESI-MS分析値を以下に示す。
Example 12
Compound 17 (0.41 g) is dissolved in a mixed solvent of methanol and dichloromethane, and then added to ice-cold hydroiodic acid (1.8 mL) and stirred. After bringing the reaction mixture to room temperature, the solvent was removed and the residue was purified by column chromatography to give 0.356 g product. As a result of analysis by 1 H-NMR and ESI-MS, this product was found to be one represented by the following formula. This product is referred to as "compound 18". The 1 H-NMR and ESI-MS analytical values of Compound 18 are shown below.
1H NMR (500 MHz, CDCl3, Me4Si): δ7.84 (2H, d, J 8.4), 7.62 (2H, d, J 8.4), 7.43
(2H, d, J 8.8), 7.08 (4H, d, J 8.9), 6.98 (2H, d, J 8.8), 6.84 (4H, d, J 8.9), 3.94 (4H, t, J 6.6), 1.81-1.75 (4H, m), 1.49-1.44 (4H, m), 1.36-1.33 (8H, m), 0.93-0.90 (6H, m)。
ESI-MS: m/z = 665.4 [M-I]+。
1 H NMR (500 MHz, CDCl 3 , Me 4 Si): δ 7.84 (2 H, d, J 8.4), 7.62 (2 H, d, J 8.4), 7.43
(2H, d, J 8.8), 7.08 (4H, d, J 8.9), 6.98 (2H, d, J 8.8), 6.84 (4H, d, J 8.9), 3.94 (4H, t, J 6.6), 1.81 -1.75 (4H, m), 1.49-1.44 (4H, m), 1.36-1.33 (8H, m), 0.93-0.90 (6H, m).
ESI-MS: m / z = 665.4 [MI] <+> .
＜実施例１３＞
ペロブスカイト型太陽電池の作製
ガラス表面に透明導電性支持体であるフッ素をドープした酸化錫が蒸着された透明導電性ガラスの表面に、酸化チタン膜を大気中、350℃でスプレー熱分解法により製膜し、450
℃で30分間加熱することで、約30 nmの膜を得た。
さらに電子輸送層として、酸化チタン（平均粒径20 nm）のエタノール分散液をスピンコート法により、約200 nm製膜し、大気中で450 ℃で30分間加熱することで、多孔質酸化チタン膜を得た。
次に、ヨウ化鉛とヨウ化メチルアンモニウムをN,N−ジメチルホルムアミドとジメチルスルホキシドの混合溶液（3/1）に溶解し、1.5Mの溶液を調製した。上記の多孔質酸化チタン膜を形成した基板上に、溶液をスピンコートし、続いてクロロベンゼンをスピンコートすることにより製膜した。上記溶液を製膜した基板を120℃まで加熱し、CH3NH3PbI3ペロブスカイト層（光吸収層）を形成した。
その後、前記で得た化合物をクロロベンゼンとイソプロピルアルコールの混合溶液（1/1）に溶解し、50 mMの溶液を調製した。この溶液を上記のペロブスカイト層を製膜した基板にスピンコートした。
さらに、その上にp型バッファ層の溶液をスピンコートし製膜した。p型バッファ層の溶液は、spiro-OMeTAD（88 mg）、リチウムビス（トリフルオロメタンスルホニル）イミド（14 mg）、tert-ブチルピリジン（31 μL）をクロロベンゼン（1 mL）に溶解させて調製した。
最後に、p型バッファ層を形成した基板の上に金を蒸着し、目的の太陽電池を得た。同太陽電池は、図１(A)に相当するものである。太陽電池性能はソーラーシュミレーター（WXS-80C-2、ワコム電創製）（AM1.5、100 mW cm-2）を用いて評価した。
Example 13
Preparation of Perovskite Solar Cell A titanium oxide film is formed by spray pyrolysis at 350 ° C. in the atmosphere on the surface of a transparent conductive glass on which fluorine-doped tin oxide as a transparent conductive support has been deposited on the glass surface. Membrane and 450
By heating at 30 ° C. for 30 minutes, a film of about 30 nm was obtained.
Further, as an electron transport layer, an ethanol dispersion of titanium oxide (average particle diameter 20 nm) is formed into a film of about 200 nm by spin coating, and heated in air at 450 ° C. for 30 minutes to form a porous titanium oxide film. I got
Next, lead iodide and methylammonium iodide were dissolved in a mixed solution (3/1) of N, N-dimethylformamide and dimethyl sulfoxide to prepare a 1.5 M solution. The solution was spin-coated on the substrate on which the porous titanium oxide film was formed, followed by spin-coating chlorobenzene. The substrate on which the solution was formed was heated to 120 ° C. to form a CH 3 NH 3 PbI 3 perovskite layer (light absorption layer).
Thereafter, the compound obtained above was dissolved in a mixed solution (1/1) of chlorobenzene and isopropyl alcohol to prepare a 50 mM solution. This solution was spin-coated on a substrate on which the above-mentioned perovskite layer was formed.
Furthermore, the solution of the p-type buffer layer was spin-coated and formed into a film on it. The solution of p-type buffer layer was prepared by dissolving spiro-OMeTAD (88 mg), lithium bis (trifluoromethanesulfonyl) imide (14 mg), tert-butylpyridine (31 μL) in chlorobenzene (1 mL).
Finally, gold was deposited on the substrate on which the p-type buffer layer was formed, to obtain the intended solar cell. The same solar cell corresponds to FIG. The solar cell performance was evaluated using a solar simulator (WXS-80C-2, manufactured by Wacom Denso Corp.) (AM 1.5, 100 mW cm −2 ).
表１に示す化合物を用い、上記の方法により作製した電池を用いて初期性能を評価した。具体的には、各化合物を用いた電池を同一条件で９個作成し、平均値を求めた。求めた平均値を各化合物を用いた太陽電池の初期変換効率とし、未処理の太陽電池の初期変換効率との比較により評価した。下記表１には、初期変換効率が、未処理のものと比べて0.4％以上向上したものをA、0.2％〜0.4％向上したものをB、−0.2％〜0.2％で変化したものをC、0.2〜0.4％減少したものをD、0.4％以上減少したものをEとして、これらの評価ラン
クで示した。なお、上記光電変換効率の評価において、比較として用いた未処理の太陽電池の光電変換効率は約16％であり、太陽電池として十分に機能するものであった。
Initial performance was evaluated using the battery produced by said method using the compound shown in Table 1. Specifically, nine batteries using each compound were prepared under the same conditions, and the average value was determined. The obtained average value was regarded as the initial conversion efficiency of the solar cell using each compound, and was evaluated by comparison with the initial conversion efficiency of the untreated solar cell. In Table 1 below, those with an initial conversion efficiency improved by 0.4% or more compared with the untreated ones A, those with an 0.2% to 0.4% improvement and those with a change from −0.2% to 0.2% are C Those with a decrease of 0.2 to 0.4% as D, those with a decrease of 0.4% or more as E are indicated by these evaluation ranks. In addition, in evaluation of the said photoelectric conversion efficiency, the photoelectric conversion efficiency of the untreated solar cell used as a comparison is about 16%, and fully functioned as a solar cell.
表１の結果から、本発明の化合物をペロブスカイト型太陽電池に導入することにより、良好な変換効率を達成でき、積層材料界面のエネルギーロスを低減する化合物として有用であることがわかった。なお、初期変換効率が未処理のものと比べて減少した化合物についても、条件等の変更により良好な変換効率を達成できると考えられる。 From the results in Table 1, it was found that by introducing the compound of the present invention into a perovskite solar cell, good conversion efficiency can be achieved, and the compound is useful as a compound that reduces the energy loss at the interface of laminated materials. It is considered that good conversion efficiency can be achieved by changing conditions and the like even for a compound whose initial conversion efficiency is reduced compared to the untreated one.
本発明により、ペロブスカイト型太陽電池の積層材料界面のエネルギーロスを低減することができる化合物を得ることができる。本発明の化合物は、光電変換素子などとして用いることができる。また、本発明の光電変換素子は、ペロブスカイト型太陽電池、フォトダイオードや光センサなどとして有用である。 According to the present invention, it is possible to obtain a compound capable of reducing the energy loss at the laminated material interface of a perovskite type solar cell. The compound of the present invention can be used as a photoelectric conversion element or the like. In addition, the photoelectric conversion element of the present invention is useful as a perovskite solar cell, a photodiode, an optical sensor, or the like.
Claims (11)
（式中、Ar1〜Ar4はそれぞれ独立に置換または未置換のアリール基またはヘテロアリール基であって、Ar1とAr2、Ar1とAr3、Ar3とAr4はそれぞれ互いに結合して環を形成していてもよい；Xは有機カチオンである；Yはハロゲンアニオンである）で表される芳香族アミン誘導体。 General formula (1)
(Wherein, Ar 1 to Ar 4 are each independently a substituted or unsubstituted aryl group or heteroaryl group, and Ar 1 and Ar 2 , Ar 1 and Ar 3 , Ar 3 and Ar 4 are respectively bonded to each other An aromatic amine derivative represented by X) which may form a ring; X is an organic cation; Y is a halogen anion).
（ａ）電子輸送層と、一般式（１）で表される芳香族アミン誘導体を含む溶液を接触させる工程；および／または、
（ｂ）光吸収層と、一般式（１）で表される芳香族アミン誘導体を含む溶液を接触させる工程、
を含む、光電変換素子の製造方法。
（式中、Ar1〜Ar4はそれぞれ独立に置換または未置換のアリール基またはヘテロアリール基であって、Ar1とAr2、Ar1とAr3、Ar3とAr4はそれぞれ互いに結合して環を形成していてもよい；Xは有機カチオンである；Yはハロゲンアニオンである） Method of manufacturing a photoelectric conversion device having a first electrode having an electron transport layer on a conductive support and having a light absorbing layer containing a perovskite compound on the electron transport layer, and a second electrode facing the first electrode And
(A) contacting the electron transporting layer with a solution containing the aromatic amine derivative represented by the general formula (1); and / or
(B) contacting the light absorbing layer with a solution containing the aromatic amine derivative represented by the general formula (1),
And a method of manufacturing a photoelectric conversion element.
(Wherein, Ar 1 to Ar 4 are each independently a substituted or unsubstituted aryl group or heteroaryl group, and Ar 1 and Ar 2 , Ar 1 and Ar 3 , Ar 3 and Ar 4 are respectively bonded to each other May form a ring; X is an organic cation; Y is a halogen anion)
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