JP2019082361A - Semiconductor device - Google Patents

Abstract

To provide a semiconductor device having a magnetoresistive sensor.SOLUTION: The semiconductor device comprises: a first semiconductor module; a first plate conductor electrically connected to the first semiconductor module; and a core loess magnetoresistive sensor. The first plate conductor includes a first main body part extending in a first predetermined direction, and a first bent part having one end coupled with one end of the first main body part and bent from the first main body part in a second direction different from the first direction. The magnetoresistive sensor is provided adjacent to a bent surface formed by the first main body part and the first bent part.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a semiconductor device.

Conventionally, in a semiconductor device having a bus bar, it is known to detect a current flowing through the bus bar by providing a magnetoresistive sensor in close proximity to the bus bar (see, for example, Patent Document 1).
Patent Document 1: Japanese Patent Application Publication No. 2014-061217

  It is desirable to improve the magnetic detection sensitivity of the magnetoresistive sensor.

  According to a first aspect of the present invention, there is provided a first plate-like conductor comprising a first semiconductor module, a first plate-like conductor electrically connected to the first semiconductor module, and a coreless first magnetoresistive sensor. A first body extending in a first predetermined direction, and a first bending portion having one end connected to one end of the first body and bent from the first body in a second direction different from the first direction The first magnetoresistive sensor provides a semiconductor device provided adjacent to a bending surface formed by the first main body and the first bending portion.

  The first magnetoresistive sensor may be provided on the inner surface side of the bending surface.

  The first magnetoresistive sensor may be provided adjacent to the first bending portion in the bending surface.

  The first magnetoresistive sensor may be provided in a bending region whose radius is the length L of the first bending portion around the boundary between the first main body portion and the first bending portion in the bending surface.

  The first magnetoresistive sensor may be outside of a plane including the top surface of the first semiconductor unit provided in the first semiconductor module.

  The first magnetoresistive sensor may be outside of a plane including the side surface of the first semiconductor unit provided in the first semiconductor module.

  The bending angle of the first plate-like conductor may be 75 ° or more.

  The first plate-like conductor may further include a second main body portion having one end connected to the other end of the first bending portion and extending in the first direction.

  The first magnetoresistive sensor may be provided on the inner surface side of the bending surface formed with the first main body portion and the first bending portion.

  The first magnetoresistive sensor may be provided on the inner surface side of the bending surface formed with the second main body portion and the first bending portion.

  The semiconductor device is electrically connected to the second semiconductor module and the second semiconductor module, and has a third main body extending in the first direction and a third main body having one end connected to the third main body and different from the first direction. The second plate-like conductor may further include a second bent portion extending in the direction, and a fourth main body portion having one end connected to the other end of the second bent portion and extending in the first direction. The second body portion and the fourth body portion may be electrically connected.

  The first magnetoresistive sensor is provided adjacent to the first bending portion inside a region surrounded by the first bending portion, the second main portion, the second bending portion, and the fourth main portion. Good.

  The first plate-like conductor has one end connected to the other end of the first main body portion, and is connected to the third bending portion bending in the second direction from the first main body portion and the other end of the third bending portion And a fifth body extending in one direction.

  The first magnetoresistive sensor may be provided adjacent to the first bending portion inside a region surrounded by the first bending portion, the first main body portion, and the third bending portion.

  The semiconductor device may further include a resin portion provided adjacent to the first plate-like conductor. The first magnetoresistive sensor may be fixed to the resin portion.

  The first semiconductor module may be a SiC semiconductor.

  The above summary of the invention does not enumerate all of the features of the present invention. In addition, a subcombination of these feature groups can also be an invention.

An example of the perspective view of the upper surface side of the semiconductor module 300 is shown. An example of the perspective view of the bottom side of the semiconductor module 300 is shown. An example of the semiconductor unit 10 with which the semiconductor module 300 is provided is shown. An example of the AA cross section in the semiconductor module 300 of FIG. 2 is shown. An example of arrangement | positioning of the magnetoresistive sensor 30 in the semiconductor device 100 is shown. The direction of the magnetic field generated around the bus bar 520 according to the comparative example is shown. The direction of the magnetic field generated around the plate-like conductor 20 having the bending portion 24 is shown. An example of bending area | region Rb formed around the plate-shaped conductor 20 is shown. An example of arrangement | positioning of the magnetoresistive sensor 30 is shown. An example of the bending angle θ of the plate-like conductor 20 having a crank shape is shown. An example of the bending angle θ of the plate-like conductor 20 having a crank shape is shown. An example of a structure of the plate-shaped conductor 20 which has a crank shape is shown. An example of a structure of the plate-shaped conductor 20 which has U shape is shown. An example of a structure of the plate-shaped conductor 20 which has connection shape is shown. An example of a structure of the plate-shaped conductor 20 which has connection shape is shown. It is a figure for demonstrating the magnetic field intensity around the plate-shaped conductor 20 which has connection shape. An example of arrangement | positioning of the magnetoresistive sensor 30 is shown. An example of the shape of the plate-like conductor 20 is shown. An example of an operation waveform of semiconductor module 300 is shown.

  Hereinafter, the present invention will be described through the embodiments of the invention, but the following embodiments do not limit the invention according to the claims. Moreover, not all combinations of features described in the embodiments are essential to the solution of the invention.

  FIG. 1A shows an example of a perspective view of the upper surface side of the semiconductor module 300. The semiconductor module 300 has a semiconductor chip mounted inside the housing 200. The semiconductor module 300 is a power semiconductor module used for an inverter device that constitutes a power conversion device. The housing 200 is provided with a plurality of conductive terminal pins 110 on the top surface.

  FIG. 1B shows an example of a perspective view of the bottom side of the semiconductor module 300. The semiconductor module 300 is provided with a heat radiation pattern 120 on the bottom surface of the housing 200. The heat radiation pattern 120 is a member that radiates the heat generated in the semiconductor chip of the semiconductor module 300.

  In FIGS. 1A and 1B, a plane parallel to the bottom surface of the semiconductor module 300 is taken as an XY plane. Further, the longitudinal direction of the front surface of the housing 200 is taken as the X direction, and the short direction is taken as the Y direction. However, the short direction may be the X direction, and the longitudinal direction may be the Y direction. Further, a direction perpendicular to the XY plane is taken as a Z direction. In this specification, the Z direction may be referred to as the height direction, and the direction from the bottom surface of the semiconductor module 300 toward the front surface may be referred to as upward, and the direction from the front surface to the bottom may be referred to as downward. However, the vertical direction does not necessarily coincide with the gravity direction. Further, in the XYZ coordinate axes shown in the respective drawings, the side to which the arrow is attached is the positive side, and the opposite side is the negative side.

  FIG. 2 shows an example of the semiconductor unit 10 provided in the semiconductor module 300. The semiconductor unit 10 of this example includes two semiconductor units. In one example, the semiconductor unit 10 includes the laminated substrate 130, the semiconductor chip 132 mounted on the laminated substrate 130, and the conductive member 133.

  The laminated substrate 130 has a wiring pattern 138 on the front surface of the insulating plate 136 and a heat radiation pattern 120 on the rear surface. In the laminated substrate 130, the semiconductor chip 132 is mounted on the wiring pattern 138. Eight semiconductor chips 132 and a plurality of conductive members 133 are mounted on the top surface of one laminated substrate 130. The number of semiconductor chips 132 and the conductive members 133 is not limited to this.

  The semiconductor chip 132 comprises a semiconductor chip of SiC. In addition, the semiconductor chip 132 may include semiconductor chips such as an IGBT (Insulated Gate Bipolar Transistor) and an FWD (Free Wheeling Diode).

  The conductive member 133 is mounted on the wiring pattern 138 of the laminated substrate 130 and the semiconductor chip 132. In FIG. 2, the conductive member 133 is a post electrode. However, the conductive member 133 is not limited to the post electrode, and may be a conductive member such as a lead frame or a bonding wire.

  FIG. 3 shows an example of an AA cross section in the semiconductor module 300 of FIG. The semiconductor module 300 includes the semiconductor unit 10, the housing 200, and the conductive terminal pin 110. The semiconductor module 300 may include a sealing resin instead of the housing 200.

  The semiconductor unit 10 includes a laminated substrate 130, a semiconductor chip 132, a conductive member 133, and a printed substrate 134. The semiconductor unit 10 is a portion that constitutes a power semiconductor circuit including the semiconductor chip 132, and the wiring members such as the laminated substrate 130, the conductive member 133, and the printed substrate 134. The semiconductor unit 10 is shown by dotted lines in FIGS. 2 and 3.

  The printed circuit board 134 connects the semiconductor chip 132 and the wiring pattern 138 of the laminated substrate 130 via the conductive member 133. The printed circuit board 134 connects the semiconductor chip 132 to another semiconductor chip 132 via the conductive member 133. Also, the wiring pattern 138 of the insulating plate 136 is connected to the semiconductor chip 132. Thus, the semiconductor unit 10 configures a power semiconductor circuit inside the semiconductor module 300. Further, the wiring pattern 138 electrically connects the conductive terminal pin 110 and the semiconductor chip 132 via the conductive member 133.

  FIG. 4 shows an example of the arrangement of the magnetoresistive sensor 30 in the semiconductor device 100. The semiconductor device 100 includes a semiconductor module 300, a plate-like conductor 20, a connecting portion 29, and a magnetoresistive sensor 30.

  The plate-like conductor 20 is a plate-like bus bar having conductivity. The plate-like conductor 20 is electrically connected to the semiconductor module 300. Further, the plate-like conductor 20 is electrically connected to the conductive terminal pin 110 at the connecting portion 29. A predetermined current I flows through the plate-like conductor 20. In the present example, the current I flows from the main body 22 toward the bending portion 24. The plate-like conductor 20 has a main body portion 22 and a bending portion 24.

  The main body 22 extends in a first predetermined direction. In the present specification, the first direction is described as the Y-axis direction. However, the direction in which the main body portion 22 extends is not limited to this example.

  The connection portion 29 connects the main body portion 22 to the semiconductor module 300. The connecting portion 29 fixes the plate-like conductor 20 to the semiconductor module 300, and electrically connects the conductive terminal pin 110 of the semiconductor module 300 and the plate-like conductor 20. The connection part 29 fixes the plate-shaped conductor 20 to the semiconductor module 300, and if it can electrically connect the semiconductor module 300 and the plate-shaped conductor 20, it will not be limited to the structure of this example.

  The bending portion 24 bends from the main body portion 22 in a second direction different from the first direction. The bent portion 24 extends in the Z-axis direction. The bending portion 24 in this example is bent in the direction orthogonal to the main body portion 22, but may be bent at an acute angle or an obtuse angle with respect to the main body portion 22. The plate-like conductor 20 is designed in an appropriate shape according to the internal structure of the semiconductor device 100 by having the main body portion 22 and the bending portion 24.

  The magnetoresistive sensor 30 is provided adjacent to the plate conductor 20. The magnetoresistive sensor 30 is provided adjacent to a bending surface formed by the main body portion 22 and the bending portion 24. The magnetoresistive sensor 30 of this example is provided adjacent to the bending portion 24 in the bending surface. Even when the magnetoresistive sensor 30 is provided adjacent to the bending portion 24, a slight gap may be provided from the bending portion 24. That is, it is preferable that the magnetoresistive sensor 30 be provided in proximity to the plate conductor 20 as long as insulation with the plate conductor 20 is secured. In the present specification, the bending surface is a surface bent at a predetermined bending angle θ, and is configured by two members of the main body portion 22 and the bending portion 24. The bending surface may have a right angle of bending angle θ, an obtuse angle of bending angle θ, or an acute angle of bending angle θ.

  The magnetoresistive sensor 30 of this example is a coreless magnetoresistive sensor which does not have a magnetic core for focusing magnetic flux and enhancing sensitivity. The magnetoresistive sensor 30 can be miniaturized because it does not have a magnetic core, and can be freely disposed in accordance with the shape of the plate-like conductor 20. For example, the magnetoresistive sensor 30 is a high-sensitivity magnetoresistive element such as an AMR (Anisotropic Magneto Resistance) element, a GMR (Giant Magneto Resistance) element, and a TMR (Tunnel Magneto Resistance) element.

  The magnetoresistive sensor 30 detects a magnetic field generated by the current I flowing through the plate conductor 20. Thereby, the magnetoresistive sensor 30 detects the current I flowing through the plate-like conductor 20. The magnetoresistive sensor 30 is preferably disposed at a position where the strength of the magnetic field generated by the current I flowing through the plate conductor 20 is high. The magnetoresistive sensor 30 can improve the signal-to-noise ratio (SNR) by being disposed at the position of high magnetic field strength. For example, the magnetoresistive sensor 30 realizes the short circuit protection function and the overcurrent protection function of the semiconductor device 100 by detecting the current I flowing through the plate conductor 20.

  The magnetoresistive sensor 30 of this example is provided outside the plane including the upper surface 12 of the semiconductor unit 10. The outside of the plane including the upper surface 12 is not particularly limited as long as it is a region on the positive side in the Z-axis direction with respect to the plane including the upper surface 12. That is, the outside of the plane including the upper surface 12 may be above the semiconductor unit 10 or at a position away from above the semiconductor unit 10. The magnetoresistive sensor 30 is less susceptible to the influence of the stray magnetic field of the semiconductor unit 10. For example, in the magnetoresistive sensor 30, the influence of the cross coupling with the magnetic field caused by the current path inside the semiconductor unit 10 is reduced.

  The upper surface 12 of the semiconductor unit 10 may substantially indicate the upper surface of a circuit through which a relatively large current such as a main current flows in the semiconductor unit 10. In other words, a circuit which passes a small current as compared with the main current such as the control current and the sense current may not be substantially included in the semiconductor unit 10 since the influence on the magnetoresistive sensor 30 is small.

  Here, the semiconductor chip of SiC is smaller than the semiconductor chip of Si because there is a problem of yield reduction due to the crystal quality of SiC. In the semiconductor device 100 of this example, since the magnetoresistive sensor 30 is provided adjacent to the plate-like conductor 20, it is not necessary to provide a sense transistor in the semiconductor chip 132, and the semiconductor chip 132 can be miniaturized. In addition, since the semiconductor device 100 of this example is provided outside the semiconductor unit 10, it is unlikely to be affected by the complex magnetic field coupling due to the internal circuit of the semiconductor unit 10. Although the case where the semiconductor device 100 includes one magnetoresistive sensor 30 is described in this example, the semiconductor device 100 may include a plurality of magnetoresistive sensors 30.

  FIG. 5 shows the direction of the magnetic field generated around the bus bar 520 according to the comparative example. Around the bus bar 520, a magnetic field is generated in a direction according to Ampere's right-handed screw law with respect to the direction in which the current I flows. In this example, the case where the bus bar 520 does not have a bend and has a linear shape will be described. In the region on the right side of the current I flowing direction (that is, the region on the positive side of the bus bar 520 in the Z-axis direction), a magnetic field is generated in the back of the paper. Further, in the region on the left side of the current I flowing direction (ie, the region on the negative side of the bus bar 520 in the Z-axis direction), a magnetic field is generated in the front of the paper.

  FIG. 6 shows the direction of the magnetic field generated around the plate-like conductor 20 having the bending portion 24. The plate-like conductor 20 of this example has a main body 22 and a bending portion 24. Also in this case, a magnetic field is generated around the plate-like conductor 20 according to Ampere's right-handed screw law with respect to the direction in which the current I flows. However, in this example, a region on the right side of the flow direction of the current I in the main body 22 (that is, a region on the positive side in the Z axis direction of the main body 22) and a region on the right side of the flow direction of the current I in the bending portion 24 There is a region where (that is, a region on the positive side in the Y-axis direction of the bending portion 24) overlaps. In this region, since the magnetic field in the back of the paper surface is generated from both of the current I flowing to the main body portion 22 and the bending portion 24, the magnetic field becomes stronger.

  FIG. 7 shows an example of a bending region Rb formed around the plate-like conductor 20. As shown in FIG. The plate-like conductor 20 of this example has a main body 22 and a bending portion 24.

  The strong magnetic field region Rs indicates a region where the magnetic fields generated by the current I flowing through the main body portion 22 and the bending portion 24 strengthen each other when the current I flows through the plate conductor 20. The strong magnetic field region Rs in this example is the right side of the main body 22 (i.e., the positive side in the Z axis direction of the main body 22) with respect to the direction in which the current I flows. , The positive side in the Y-axis direction of the bending portion 24).

  The weak magnetic field region Rw indicates a region affected by only one of the magnetic fields generated by the current I flowing through the main body 22 or the bending portion 24 when the current I flows through the plate conductor 20. The weak magnetic field region Rw in this example is the left side of the main body 22 (i.e., the negative side of the main body 22 in the Z-axis direction) with respect to the flow direction of the current I. , The positive side in the Y-axis direction of the bending portion 24).

  The bending region Rb indicates a region where the magnetic field can be enhanced by arranging the magnetoresistive sensor 30. For example, the bending region Rb in this example is a region on the inner surface side of the bending surface of the plate-like conductor 20 (that is, the positive side in the Z-axis direction of the main body 22 and the positive side in the Y-axis direction of the bending portion 24). The inner surface side of the bending surface refers to the side facing both the bending surface of the main body portion 22 and the bending surface of the bending portion 24. For example, the bending region Rb in this example is a region inside a circle whose radius is the length L of the bending portion 24 with the boundary between the main body portion 22 and the bending portion 24 in the bending surface as the center. Since the strength of the magnetic field generated by the current I flowing through the plate conductor 20 is inversely proportional to the distance, the bending region Rb is indicated by a circle whose radius is the length L. The magnetoresistive sensor 30 can improve the detection sensitivity of the current I by being disposed in the bending region Rb. Further, since the magnetoresistive sensor 30 is provided in the bending region Rb, the SNR is improved, and the frequency characteristic and the gain characteristic are stabilized.

  FIG. 8 shows an example of the arrangement of the magnetoresistive sensor 30. As shown in FIG. The magnetoresistive sensor 30 of this example is different from the case of FIG. 4 in that the magnetoresistive sensor 30 is provided outside the plane including the side surface 14 of the semiconductor unit 10.

  The magnetoresistive sensor 30 is provided outside the plane including the top surface 12 of the semiconductor unit 10. In addition, the magnetoresistive sensor 30 is provided outside the plane including the side surface 14 of the semiconductor unit 10. Here, when the side surface 14 is the side surface on the negative side in the Y-axis direction of the semiconductor unit 10, the outside of the plane including the side surface 14 refers to a region on the negative side in the Y-axis direction than the plane including the side surface 14. The magnetoresistive sensor 30 of this example is not susceptible to the influence of the stray magnetic field of the semiconductor unit 10 by being provided outside the plane including the side surface 14. Thereby, the SNR of the magnetoresistive sensor 30 is improved, and the error of the sensor is suppressed. In the semiconductor device 100 of this example, since the magnetoresistive sensor 30 is provided outside the plane including the upper surface 12 and outside the plane including the side surface 14, the semiconductor device 100 is further less susceptible to the influence of the semiconductor unit 10.

  The side surface 14 of the semiconductor unit 10 may substantially refer to a side surface of a circuit in which a relatively large current such as a main current and a control current flows in the semiconductor unit 10. That is, a circuit which passes a small current as compared with the main current such as the sense current may not be substantially included in the semiconductor unit 10 since the influence on the magnetoresistive sensor 30 is small.

  Further, the magnetoresistive sensor 30 of the present example is provided adjacent to the surface on the semiconductor unit 10 side with respect to the bending portion 24. In this case, the plate-like conductor 20 has the bending portion 24 provided outside the plane including the side surface 14 so that the magnetoresistive sensor 30 can be disposed outside the plane including the side surface 14.

  FIG. 9 shows an example of the bending angle θ of the plate-like conductor 20 having a crank shape. The plate-like conductor 20 of this example has a crank shape by the main body portion 22 and the main body portion 26 connected to the bending portion 24. The main body 22 is an example of a first main body. The main body 26 is an example of a second main body.

  The main body portion 26 extends in the same direction as the main body portion 22. The main body portion 26 and the main body portion 22 both extend in the Y-axis direction. One end of the bending portion 24 is connected to the main body portion 22, and the other end is connected to the main body portion 26. The main body portion 22 and the main body portion 26 extend in the positive / negative opposite side in the Y-axis direction when viewed from the bending portion 24.

  The bending angle θ indicates the degree of bending of the main body portion 22 and the bending portion 24. The bending angle θ in this example is 90 °. The larger the bending angle θ, the larger the bending portion 24 bends with respect to the main body portion 22. Since the bending angle θ in this example is 90 °, the main body 22 and the bending portion 24 are orthogonal to each other. The magnetoresistive sensor 30 of this example is provided adjacent to the bending portion 24 in the bending region Rb.

  FIG. 10 shows an example of the bending angle θ of the plate-like conductor 20 having a crank shape. In this example, the bending angle θ ≧ 90 °. That is, in the plate-like conductor 20 of this example, the degree of bending of the main body portion 22 and the bending portion 24 is large. In this case, since the distance between the bending region Rb and the main body portion 22 and the bending portion 24 approaches, respectively, the strength of the magnetic field generated in the bending region Rb becomes strong. Thereby, the magnetoresistive sensor 30 can improve the detection sensitivity of a magnetic field.

  For example, the bending angle θ may be 75 ° ≦ θ ≦ 150 °, 75 ° ≦ θ ≦ 135 °, and 90 ° ≦ θ ≦ 120 °. By increasing the bending angle θ, the distance between the magnetoresistive sensor 30 and the main body 22 and the bending portion 24 can be reduced, so that the magnetic field strength can be easily improved. However, if the bending angle θ is too large, the signal strength may decrease due to the generation of magnetic fluxes that cancel each other.

  In this example, although the bending angle θ of the plate-like conductor 20 having a crank shape has been described, the bending angle θ of the plate-like conductor 20 having the L shape shown in FIGS. 4 and 8 is similarly made. It may be θ9090 °. Further, the bending angle θ of the L-shaped plate-like conductor 20 may be a bending angle θ ≦ 90 °.

  FIG. 11 shows an example of the configuration of a plate-like conductor 20 having a crank shape. The plate-like conductor 20 of the present example includes a main body portion 22, a bending portion 24, and a main body portion 26. The plate-like conductor 20 of this example has a crank shape by the main body portion 22 and the main body portion 26 connected to the bending portion 24. The bending angle θ in this example is 90 °. The main body 22 is an example of a first main body. The main body 26 is an example of a second main body. The main body 22 may be coupled to the semiconductor unit 10.

  The plate-like conductor 20 forms two strong magnetic field regions Rs of a strong magnetic field region Rs1 and a strong magnetic field region Rs2. The strong magnetic field region Rs1 is a region on the right side of the main body 22 and the bending portion 24 with respect to the current I flowing direction (ie, a region on the positive side of the main body 22 in the Z axis direction and the Y axis direction of the bending portion 24 Area on the positive side). The strong magnetic field region Rs1 of the present example is a region on the inner surface side of the bending surface formed by the main body portion 22 and the bending portion 24. The strong magnetic field region Rs2 is a region on the left side of the bending portion 24 and the main body portion 26 with respect to the flowing direction of the current I (that is, a region on the positive side in the Z axis direction of the main body portion 22 and the Y axis direction of the bending portion 24 Negative region). The strong magnetic field region Rs2 in the present example is a region on the inner surface side of the bending surface formed by the bending portion 24 and the main body portion 26. Thus, the plate-like conductor 20 having a crank shape improves the degree of freedom in the arrangement of the magnetoresistive sensor 30.

  FIG. 12 shows an example of the configuration of a plate-like conductor 20 having a U-shape. The plate-like conductor 20 of the present example includes a main body portion 22, a bending portion 24, and a main body portion 26. The plate-like conductor 20 of the present example has a U-shape by the main body 22 and the main body 26 connected to the bending portion 24. That is, the plate-like conductor 20 of this example is different from the case of the crank shape in FIG. 11 in that the main body portion 26 extends on the positive side in the Y-axis direction with respect to the bending portion 24. The bending angle θ in this example is 90 °. The main body 22 is an example of a first main body. The main body 26 is an example of a second main body.

  The plate-like conductor 20 forms a strong magnetic field region Rs in a region surrounded by a U-shape. The strong magnetic field region Rs is a region on the right side of the main body 22, the bending portion 24 and the main body 26 with respect to the direction in which the current I flows (that is, a positive side region of the main body 22 in the Z axis direction A region on the positive side in the Y-axis direction and a region on the negative side in the Z-axis direction of the main body portion 26). The strong magnetic field region Rs in this example is a region on the inner surface side of a bending surface formed by the main body portion 22, the bending portion 24 and the main body portion 26. As described above, the U-shaped plate-like conductor 20 improves the degree of freedom in the arrangement of the magnetoresistive sensor 30. Further, when the magnetoresistive sensor 30 is disposed inside the U-shape, the magnetoresistive sensor 30 is protected by the plate-like conductor 20 from the noise and the like in the surroundings.

  FIG. 13 shows an example of the configuration of a plate-like conductor 20 having a connection shape. The plate-like conductor 20 of this example has the plate-like conductor 20a and the plate-like conductor 20b connected. The plate-like conductor 20a and the plate-like conductor 20b each have a crank shape. The semiconductor device 100 of this example includes a semiconductor unit 10a and a semiconductor unit 10b. The semiconductor unit 10a is an example of a first semiconductor unit. The semiconductor unit 10 b is an example of a second semiconductor module.

  The plate-like conductor 20a has a main body 22a, a bending portion 24a, and a main body 26a. The main body 22 a is an example of a first main body. The bending portion 24 a is an example of a first bending portion. The main body 26 a is an example of a second main body. A current Ia flows through the plate conductor 20a.

  The main body 22 a extends in a first predetermined direction. The main body 22 a extends on the positive side in the Y-axis direction. The main body 22a is electrically connected to the semiconductor unit 10a.

  The bending portion 24 a extends in a second direction different from the main portion 22 a. The bent portion 24a of this example extends on the positive side in the Z-axis direction. One end of the bending portion 24a in this example is connected to the main body portion 22a, and the other end is connected to one end of the main body portion 26a.

  The main body portion 26a extends in the same direction as the main body portion 22a. The main body portion 26 a extends on the positive side in the Y-axis direction. The main body portion 26a of this example is shorter than the main body portion 22a. However, the length of the main body portion 26a may be appropriately changed according to the arrangement of the semiconductor unit 10a and the like.

  The plate-like conductor 20b has a main body portion 22b, a bending portion 24b, and a main body portion 26b. The main body 22 b is an example of a third main body. The bending portion 24 b is an example of a second bending portion. The main body 26 b is an example of a fourth main body. A current Ib flows through the plate conductor 20b.

  The main body 22b extends in a first predetermined direction. The main body 22b extends on the negative side in the Y-axis direction. The main body 22 b is electrically connected to the semiconductor unit 10 b.

  The bending portion 24 b extends in a third direction different from the main portion 22 b. The bent portion 24 b extends on the positive side in the Z-axis direction. One end of the bending portion 24b in this example is connected to the main body portion 22b, and the other end is connected to one end of the main body portion 26b.

  The main body portion 26 b extends in the same direction as the main body portion 22 b. The main body portion 26 b extends on the negative side in the Y-axis direction. The main body portion 26 b of this example is shorter than the main body portion 22 b. However, the length of the main body portion 26b may be appropriately changed according to the arrangement of the semiconductor unit 10b or the like.

  The external connection board 40 is electrically connected to the plate conductor 20a and the plate conductor 20b. The external connection board 40 is connected to the main body 26a and the main body 26b. The current Ia is input to the external connection board 40 from the plate conductor 20a, and the current Ib is input from the plate conductor 20b.

  The plate-like conductor 20 a and the plate-like conductor 20 b may be electrically connected to each other by being directly connected without using the external connection board 40. At this time, the other end of the main body portion 26a and the other end of the main body portion 26b are connected. The plate-like conductor 20a and the plate-like conductor 20b connected have a hat shape.

  The magnetoresistive sensor 30a is provided outside the plane including the top surface 12a of the semiconductor unit 10a and outside the plane including the side surface 14a of the semiconductor unit 10a. Thereby, the magnetoresistive sensor 30a can avoid the influence of the noise magnetic field generated by the stray magnetic field of the semiconductor unit 10a. Further, the magnetoresistive sensor 30a is provided in a bending region Rb closer to the semiconductor unit 10a than the bending portion 24a. Thereby, the magnetoresistive sensor 30a detects a high intensity magnetic field generated by the current Ia.

  The magnetoresistive sensor 30b is provided outside the plane including the top surface 12b of the semiconductor unit 10b and outside the plane including the side surface 14b of the semiconductor unit 10b. Thereby, the magnetoresistive sensor 30b can avoid the influence of the noise magnetic field generated by the stray magnetic field of the semiconductor unit 10b. Further, the magnetoresistive sensor 30 b is provided in the bending region Rb closer to the semiconductor unit 10 b than the bending portion 24 b. Thereby, the magnetoresistive sensor 30b detects a high intensity magnetic field generated by the current Ib.

  The magnetoresistive sensor 30 is provided on both sides of the plate conductor 20a and the plate conductor 20b. However, the magnetoresistive sensor 30 may be provided on any one of the plate conductor 20 a and the plate conductor 20 b. It can select suitably with respect to the semiconductor module which wants to sense an electric current.

  FIG. 14 shows an example of the configuration of the plate-like conductor 20 having a connection shape. The semiconductor device 100 of this example differs from the case of FIG. 13 in the area where the magnetoresistive sensor 30 is provided.

  The magnetoresistive sensor 30a is provided outside the plane including the top surface 12a of the semiconductor unit 10a and outside the plane including the side surface 14a of the semiconductor unit 10a. Thereby, the magnetoresistive sensor 30a can avoid the influence of the noise magnetic field generated by the stray magnetic field of the semiconductor unit 10a. The magnetoresistive sensor 30a is provided adjacent to the bending portion 24a inside the area surrounded by the bending portion 24a, the main body portion 26a, the bending portion 24b, and the main body portion 26b. That is, the magnetoresistive sensor 30a is provided in the bending region Rb on the opposite side to the semiconductor unit 10a with respect to the bending portion 24a. Thereby, the magnetoresistive sensor 30a detects a high intensity magnetic field generated by the current Ia. Further, since the magnetoresistive sensor 30 of the present example is provided inside the area surrounded by the plate-like conductor 20, the plate-like conductor 20 protects the magnetoresistive sensor 30 from noise and the like in the periphery. The magnetoresistive sensor 30a of this example is an example of a first magnetoresistive sensor.

  The magnetoresistive sensor 30b is provided outside the plane including the top surface 12b of the semiconductor unit 10b and outside the plane including the side surface 14b of the semiconductor unit 10b. Thereby, the magnetoresistive sensor 30b can avoid the influence of the noise magnetic field generated by the stray magnetic field of the semiconductor unit 10b. The magnetoresistive sensor 30b is provided adjacent to the bending portion 24b inside the area surrounded by the bending portion 24a, the main body portion 26a, the bending portion 24b, and the main body portion 26b. That is, the magnetoresistive sensor 30b is provided in the bending region Rb on the opposite side to the semiconductor unit 10b with respect to the bending portion 24b. Thereby, the magnetoresistive sensor 30b detects a high intensity magnetic field generated by the current Ib. The magnetoresistive sensor 30 b of this example is an example of a second magnetoresistive sensor.

  FIG. 15 is a diagram for explaining the magnetic field strength around the plate-like conductor 20 having the connection shape. The plate-like conductor 20 having the coupling shape has both the strong magnetic field region Rs and the weak magnetic field region Rw in the region surrounded by the bending portion 24 and the main body portion 26.

  The strong magnetic field region Rs3 is a region in which the magnetic fields generated by the current Ia intensify each other in a region surrounded by the bending portion 24 and the main body portion 26. That is, in the region surrounded by the bending portion 24 and the main body portion 26, a magnetic field in a direction of mutually strengthening is generated by the current Ia flowing through the bending portion 24a and the main body portion 26a.

  The strong magnetic field region Rs4 is a region in which magnetic fields generated by the current Ib intensify each other in a region surrounded by the bending portion 24 and the main body portion 26. That is, in the region surrounded by the bending portion 24 and the main body portion 26, a magnetic field in a direction of mutually strengthening is generated by the current Ib flowing through the bending portion 24b and the main body portion 26b.

  In the weak magnetic field region Rw3, in the region surrounded by the bending portion 24 and the main body portion 26, the magnetic field generated by the current Ia flowing to the bending portion 24a and the main body portion 26a and the magnetic field generated by the current Ib flowing to the bending portion 24b and the main body portion 26b Is an area where the two cancel each other out.

  The weak magnetic field region Rw4 is a region not surrounded by the bending portion 24 and the main body portion 26. Since the weak magnetic field region Rw4 is not the bending region Rb, the magnetic field strength is weakened.

  FIG. 16 shows an example of the arrangement of the magnetoresistive sensor 30. As shown in FIG. The semiconductor device 100 of this example includes a resin unit 50.

  The resin portion 50 covers the periphery of the semiconductor unit 10 and the plate-like conductor 20. For example, the resin portion 50 is an insulating material such as an epoxy resin. In particular, when the semiconductor unit 10 is a SiC device operating at a high temperature, it is desirable that the material of the resin portion 50 withstand the high temperature.

  The magnetoresistive sensor 30 is provided adjacent to the bending portion 24. The magnetoresistive sensor 30 of the present example is disposed at a position adjacent to the bending portion 24 by being fixed to the resin portion 50.

  FIG. 17 shows an example of the shape of the plate-like conductor 20. As shown in FIG. The plate-like conductor 20 of this example has a plurality of bent portions 24. The plate-like conductor 20 has a recess shape.

  The plate-like conductor 20 has a main body portion 22, a bending portion 24, a main body portion 26, a bending portion 27, and a main body portion 28. In the present example, the main body 22 is an example of a first main body. The main body 26 is an example of a second main body. The main body 28 is an example of a fifth main body. The bending portion 24 is an example of a first bending portion. The bending portion 27 is an example of a third bending portion.

  One end of the bending portion 27 is connected to the other end of the main body portion 22, and the bending portion 27 bends in the second direction from the main body portion 22. In addition, the other end of the bending portion 27 is connected to the main body portion 28.

  One end of the main body portion 28 is connected to the other end of the bending portion 27 and extends in the Y-axis direction. The main body portion 28 may be connected to the external connection board 40 at the other end.

  The magnetoresistive sensor 30 is provided inside a region surrounded by the bending portion 24, the main body portion 22 and the bending portion 27. That is, the magnetoresistive sensor 30 is disposed in the recess formed by the bending portion 24, the main body portion 22 and the bending portion 27. The magnetoresistive sensor 30 is fixed to the resin portion 50 and provided adjacent to the bending portion 24.

  Thus, the semiconductor device 100 can freely arrange the magnetoresistive sensor 30 adjacent to the plate conductor 20 by using the coreless magnetoresistive sensor 30. The semiconductor device 100 of this example has a large degree of freedom in the arrangement of the magnetoresistive sensor 30 and in the wiring, so that miniaturization can be realized.

  FIG. 18 shows an example of operation waveforms of the semiconductor module 300. The vertical axis shows current [A], and the horizontal axis shows arbitrary time. The semiconductor module 300 of this example outputs the waveform D obtained from the two magnetoresistive sensors shown by the waveform B and the waveform C when the current shown by the waveform A flows. In this case, the semiconductor module 300 outputs the short circuit waveform indicated by the waveform E when the waveform A exceeds 300A. Thus, the semiconductor module 300 protects the semiconductor unit 10 from a short circuit.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It is apparent to those skilled in the art that various changes or modifications can be added to the above embodiment. It is also apparent from the scope of the claims that the embodiments added with such alterations or improvements can be included in the technical scope of the present invention.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor unit, 12 ... Upper surface, 14 ... Side surface, 20 ... Plate-shaped conductor, 22 ... Main-body part, 24 ... Bending part, 26 ... Main-body part, 27 · · Bending section, 28 · · · body section, 29 · · · · · · · · · · · · magnetoresistive sensor, 40 · · · external connection board, 50 · · · resin section, 100 · · · semiconductor devices, 110 ... Conductive terminal pins, 120: Heat radiation pattern, 130: Multilayer substrate, 132: Semiconductor chip, 133: Conductive member, 134: Printed substrate, 136: Insulating plate, 138 ... Wiring pattern, 200 ... Case, 300 ... Semiconductor module, 520 ... Bus bar

Claims (16)

A first semiconductor module,
A first plate-shaped conductor electrically connected to the first semiconductor module;
And a coreless first magnetoresistive sensor;
The first plate conductor is
A first main body extending in a first predetermined direction;
A first bending portion connected at one end to the one end of the first body portion and bent in a second direction different from the first direction from the first body portion;
The first magnetoresistive sensor is provided adjacent to a bending surface formed by the first main body portion and the first bending portion. Semiconductor device. The semiconductor device according to claim 1, wherein the first magnetoresistive sensor is provided on an inner surface side of the bending surface. The semiconductor device according to claim 1, wherein the first magnetoresistive sensor is provided adjacent to the first bending portion in the bending surface. The first magnetoresistive sensor is provided in a bending region whose radius is the length L of the first bending portion, centering on the boundary between the first main body portion and the first bending portion in the bending surface. The semiconductor device according to any one of 1 to 3. The semiconductor device according to any one of claims 1 to 4, wherein the first magnetoresistive sensor is outside a plane including an upper surface of a first semiconductor unit provided in the first semiconductor module. The semiconductor device according to any one of claims 1 to 5, wherein the first magnetoresistive sensor is outside a plane including a side surface of a first semiconductor unit provided in the first semiconductor module. The semiconductor device according to any one of claims 1 to 6, wherein a bending angle of the first plate-like conductor is 75 ° or more. The first plate-like conductor further includes a second main body portion having one end connected to the other end of the first bending portion and extending in the first direction,
The semiconductor device according to any one of claims 1 to 7, wherein the first main body portion is coupled to the first semiconductor module. The semiconductor device according to claim 8, wherein the first magnetoresistive sensor is provided on an inner surface side of a bending surface formed with the first main body portion and the first bending portion. The semiconductor device according to claim 8, wherein the first magnetoresistive sensor is provided on an inner surface side of a bending surface formed with the second main body portion and the first bending portion. A second semiconductor module,
A third body portion electrically connected to the second semiconductor module and extending in the first direction, and an end portion connected to the third body portion, and extending in a third direction different from the first direction A second plate-like conductor having a bending portion, and a fourth body portion having one end connected to the other end of the second bending portion and extending in the first direction;
And further
The semiconductor device according to claim 8, wherein the second main body portion and the fourth main body portion are electrically connected. The first magnetoresistive sensor is provided on the first bending portion inside a region surrounded by the first bending portion, the second main portion, the second bending portion, and the fourth main portion. The semiconductor device according to claim 11, provided adjacently. The first plate conductor is
A third bending portion connected at one end to the other end of the first body portion and bent in the second direction from the first body portion;
The semiconductor device according to any one of claims 1 to 8, further comprising: a fifth main body portion connected to the other end of the third bending portion and extending in the first direction. The first magnetoresistive sensor is provided adjacent to the first bending portion inside a region surrounded by the first bending portion, the first main body portion, and the third bending portion. The semiconductor device of Claim 13. It further comprises a resin portion provided adjacent to the first plate-like conductor,
The semiconductor device according to any one of claims 1 to 14, wherein the first magnetoresistive sensor is fixed to the resin portion. The semiconductor device according to any one of claims 1 to 15, wherein the first semiconductor module comprises a SiC semiconductor chip.

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