JP2019047110A - Spin current magnetization reversal element, spin track torque type magnetoresistive element, magnetic memory, and high frequency magnetic element - Google Patents

Abstract

To provide a spin current magnetization reversal element capable of easily realizing the magnetization reversal without preventing a decrease in the degree of integration.SOLUTION: A spin current magnetization reversal element includes spin track torque wiring extending in a first direction, a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin track torque wiring, and a first magnetic field application layer spaced apart in the first direction of the first ferromagnetic layer and applying an assist magnetic field for assisting magnetization reversal of the first ferromagnetic layer to the first ferromagnetic layer.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a spin current magnetization reversal element, a spin orbit torque type magnetoresistive element, a magnetic memory and a high frequency magnetic element.

  A giant magnetoresistance (GMR) element consisting of a multilayer film of a ferromagnetic layer and a nonmagnetic layer, and a tunnel magnetoresistance (TMR) element using an insulating layer (tunnel barrier layer, barrier layer) for the nonmagnetic layer are the magnetoresistance effect It is known as an element. In general, the TMR element has a high element resistance and a large magnetoresistance (MR) ratio as compared to the GMR element. Therefore, attention is focused on TMR elements as elements for magnetic sensors, high frequency components, magnetic heads, and nonvolatile random access memories (MRAMs).

  The MRAM reads and writes data using the characteristic that the element resistance of the TMR element changes as the direction of magnetization of the two ferromagnetic layers sandwiching the insulating layer changes. As a writing method of the MRAM, writing (magnetization reversal) is performed using a magnetic field generated by a current, and writing (magnetization (magnetization) is performed using spin transfer torque (STT) generated by flowing a current in the stacking direction of the magnetoresistance effect element. A method of performing inversion) is known.

  The magnetization reversal of the TMR element using STT is efficient from the viewpoint of energy efficiency, but the switching current density for causing the magnetization reversal is high. From the viewpoint of prolonging the life of the TMR element, it is desirable that the reversal current density be low. The same applies to the GMR element.

  Therefore, in recent years, attention has been focused on magnetization inversion utilizing pure spin current generated by spin-orbit interaction as a means for reducing the inversion current (for example, Non-Patent Document 1). Although this mechanism is not yet fully clarified, it is thought that the pure spin current generated by spin-orbit interaction or the Rashba effect at the interface of different materials induces spin-orbit torque (SOT) and magnetization reversal occurs. It is done. Pure spin current is produced by the same number of upward spin electrons and downward spin electrons flowing in opposite directions, and the charge flow is offset. Therefore, the current flowing through the magnetoresistive element is zero, and it is expected to extend the life of the magnetoresistive element.

 On the other hand, it is said that it is necessary to disturb the symmetry of the magnetization which carries out magnetization inversion by applying an external magnetic field for the magnetization inversion using SOT (for example, nonpatent literature 2). In order to apply an external magnetic field, a source for the external magnetic field is required. Providing a separate external magnetic field generation source leads to a decrease in integration of the integrated circuit including the spin current magnetization reversal element. Therefore, methods for enabling magnetization reversal using SOT without applying an external magnetic field have also been studied.

  For example, Non-Patent Document 3 describes that the symmetry of the magnetization intensity is broken by changing the amount of oxygen in the oxide film coupled to the magnetization-inverted ferromagnetic material. When the symmetry of the magnetization intensity is broken, magnetization rotation is facilitated, and magnetization reversal using SOT becomes possible even in the absence of a magnetic field.

I. M. Miron, K. Garello, G. Gaudin, P.-J. Zermatten, M. V. Costache, S. Auffret, S. Bandiera, B. Rodmacq, A. Schuhl, and P. Gambardella, Nature, 476, 189 (2011). S. Fukami, T. Anekawa, C. Zhang, and H. Ohno, Nature Nanotechnology, DOI: 10.1038 / NNANO. 2016. 29. Guoqiang Yu, et al., Nature Nanotechnology, DOI: 10.1038 / NNANO.2014.94.

  However, the method described in Non-Patent Document 3 has a problem that it is difficult to control the amount of oxygen. In particular, in each element manufactured at once by a thin film process, it is difficult in mass production to form an inclination of the same amount of oxygen in each element. Also, if the magnitude of the magnetic anisotropy is different in the in-plane direction of the magnetoresistive element, the magnetization of the small portion of the magnetic anisotropy is reversed when an unintended external force (external magnetic field, heat, etc.) is applied. There is. Unintended magnetization reversal results in noise in the data and prevents long-term storage of the data. In particular, if the size of the ferromagnetic body of the magnetoresistance effect element is such a size that can form a domain wall, the magnetization reversal of the portion with small magnetic anisotropy may induce the magnetization reversal of the other portion, and the data may be rewritten. There is.

 Further, as a structure for disturbing the symmetry of magnetization in which magnetization is reversed, it is conceivable to form a wire inside a circuit in which an element is formed, and to adopt a structure in which a magnetic field assisting magnetization reversal is generated from this wire. However, if a structure for assisting the magnetization reversal using a wire is adopted, the power consumed by the wire increases, and there is a problem that the degree of integration of the circuit is reduced because the wire is formed.

The present invention has been made in view of the above problems, and is a spin current magnetization reversal element having a configuration capable of inducing magnetization reversal without causing an increase in power consumption, which does not cause a decrease in integration degree. It aims at providing an inversion element.
Another object of the present invention is to provide a magnetoresistive effect element, a magnetic memory, and a high frequency magnetic element provided with the above-mentioned excellent spin current magnetization reversal element.

As a result of intensive investigations, the present inventors incorporated a magnetic field application means for generating a magnetic field constantly without flowing a current or the like into the inside of the device, thereby reducing the spin orbit torque (SOT). It has been found that the magnetization reversal can be easily caused by utilizing.
That is, the present invention provides the following means in order to solve the above problems.

(1) The spin current magnetization reversal element according to the first aspect includes a spin orbit torque wiring extending in a first direction, and a second spin current arranged in a second direction intersecting the first direction of the spin orbit torque wiring. A first magnetic field application for applying an assist magnetic field to the first ferromagnetic layer, the assist magnetic field being spaced apart from the first ferromagnetic layer in the first direction of the first ferromagnetic layer and assisting magnetization reversal of the first ferromagnetic layer; And a layer.

(2) In the spin current magnetization reversal element according to the above aspect, the magnetization easy axis of the first ferromagnetic layer may be in the second direction.

(3) In the spin current magnetization reversal element according to the above aspect, the magnetization easy axis of the first magnetic field application layer is the first direction, and the magnetic field generated by the first magnetic field application layer is at least a component in the first direction. May be included.

(4) In the spin current magnetization reversal element according to the above aspect, the spin orbit torque wiring may be in contact with the first magnetic field application layer.

(5) In the spin current magnetization reversal element according to the above aspect, the distance between the first ferromagnetic layer and the first magnetic field application layer may be equal to or less than the spin diffusion length of the spin path torque wiring.

(6) The spin current magnetization reversal element according to the above aspect is characterized in that the area of the first magnetic field application layer projected from the first direction with respect to the first surface extending along the second direction is the first surface. It may be larger than the area of the first ferromagnetic layer projected from the first direction with respect to the surface.

(7) The spin current magnetization reversal element according to the above aspect further includes a second magnetic field application layer which sandwiches the first ferromagnetic layer with the first magnetic field application layer and generates a magnetic field having at least a component in the first direction. You may have.

(8) The spin current magnetization reversal element according to the above aspect may further include via interconnects extending in the second direction from at least two points sandwiching the first ferromagnetic layer in the spin track torque interconnect.

(9) The spin current magnetization reversal element according to the above aspect may further include a magnetic shield layer sandwiching the spin orbit torque wiring and the first ferromagnetic layer in the second direction.

(10) The spin orbit torque type magnetoresistance effect device according to the second aspect includes the spin current magnetization reversal element according to the above aspect, and a surface of the first ferromagnetic layer opposite to a surface in contact with the spin orbit torque wiring. And a second ferromagnetic layer sandwiching the first ferromagnetic layer and the nonmagnetic layer.

(11) The magnetic memory according to the third aspect includes a plurality of spin orbit torque type magnetoresistance effect elements according to the above aspect.

(12) The magnetic memory according to the above aspect is provided with an element portion in which a plurality of the spin orbiting torque type magnetoresistance effect elements are arrayed, and an outer periphery of the element portion and a magnetic field in the central portion and the peripheral portion of the element portion. The magnetic field applying unit may be further included.

(13) A high frequency magnetic element according to a fourth aspect includes the spin orbit torque type magnetoresistive element according to the above aspect.

 According to the spin current magnetization reversal element according to the aspect described above, it is possible to provide a spin current magnetization reversal element that can perform magnetization reversal without increasing power consumption and does not cause a decrease in integration degree. Further, a magnetoresistive effect element, a magnetic memory, and a high frequency magnetic element provided with such an excellent spin current magnetization reversal element can be provided.

It is the perspective view which showed the spin current magnetization reversal element concerning a 1st embodiment typically. It is the perspective view which showed the spin current magnetization reversal element concerning a 2nd embodiment typically. It is the perspective view which showed typically another example of the spin current magnetization inversion element which concerns on 2nd Embodiment. It is the perspective view which showed the spin current magnetization reversal element concerning a 3rd embodiment typically. It is the perspective view which showed the spin current magnetization reversal element concerning a 4th embodiment typically. It is the perspective view which showed the spin current magnetization reversal element concerning a 5th embodiment typically. It is the perspective view which showed the spin current magnetization reversal element concerning a 6th embodiment typically. It is the perspective view which showed typically the spin orbit torque type | mold magnetoresistive effect element based on 7th Embodiment. It is the figure which showed typically the manufacturing method of the spin orbit torque type | mold magnetoresistive effect element concerning 7th Embodiment. It is the figure which showed the magnetic memory concerning 8th Embodiment typically. It is the perspective view which showed the principal part of the magnetic memory which concerns on 8th Embodiment. It is sectional drawing which cut | disconnected another example of the magnetic memory concerning 8th Embodiment along x direction. It is a cross-sectional schematic diagram of the high frequency magnetic element concerning 9th Embodiment.

  Hereinafter, the present embodiment will be described in detail with reference to the drawings as appropriate. In the drawings used in the following description, in order to make the features easy to understand, the features that are the features may be enlarged for the sake of convenience, and the dimensional ratio of each component may be different from the actual one. The materials, dimensions, and the like exemplified in the following description are merely examples, and the present invention is not limited to them, and can be appropriately modified and implemented within the scope of achieving the effects of the present invention.

First Embodiment
FIG. 1 is a perspective view schematically showing a spin current magnetization reversal element according to the first embodiment. The spin current magnetization reversal element 10 according to the first embodiment has a first ferromagnetic layer 1, a spin orbit torque wiring 2, a first magnetic field application layer 3, and a via wiring 4. In the spin current magnetization reversal element 10 shown in FIG. 1, the first ferromagnetic layer 1 having a rectangular shape in plan view having the same width as that of the spin track torque wiring 2 is stacked in the center of the top surface of the band spin track torque wiring 2. . The first magnetic field application layer 3 has the same width and the same length as the first ferromagnetic layer 1 in plan view, and is spaced apart from the first ferromagnetic layer 1 and the spin orbit torque wiring 2.
Hereinafter, the first direction in which the spin orbit torque wiring 2 extends is the x direction, and the stacking direction (the second direction) of the first ferromagnetic layer 1 is the direction orthogonal to any of the z direction, the x direction, and the z direction. Is defined as the y direction.

<First ferromagnetic layer>
The first ferromagnetic layer 1 functions by relatively changing the direction of its magnetization.
As a material of the first ferromagnetic layer 1, a ferromagnetic material, in particular a soft magnetic material can be applied. For example, a metal selected from the group consisting of Cr, Mn, Co, Fe and Ni, an alloy containing one or more of these metals, and these metals and at least one or more elements of B, C, and N Alloys can be used. Specifically, Co-Fe, Co-Fe-B, and Ni-Fe can be exemplified.

 The magnetization easy axis of the first ferromagnetic layer 1 is in the z direction, and the magnetization M1 of the first ferromagnetic layer 1 is oriented in the z direction. Here, the orientation direction of the magnetization M1 is not limited to the case where it completely coincides with the z direction, but may be deviated from the z direction within the range where the effect is exerted. A perpendicular magnetization film in which the magnetization M1 is in the z direction can have many magnetizations in the same area (xy plane), and is excellent in integration.

<Spin orbit torque wiring>
The spin orbit torque wiring 2 extends in the x direction. The spin orbit torque wiring 2 is connected to one surface of the first ferromagnetic layer 1 in the z direction. The spin orbit torque wiring 2 may be directly connected to the first ferromagnetic layer 1 or may be connected via another layer such as a cap layer.

The spin orbit torque wiring 2 is made of a material in which a pure spin current is generated by the spin Hall effect when current flows. As such a material, a material having a configuration in which a pure spin current is generated in the spin orbit torque wiring 2 is sufficient. Therefore, the material is not limited to a material composed of a single element, and may be composed of a part composed of a material that easily generates a pure spin current and a part composed of a material that hardly generates a pure spin current.
The spin Hall effect is a phenomenon in which a pure spin current is induced in a direction perpendicular to the direction of the current based on spin-orbit interaction when a current is supplied to a material. The mechanism by which a pure spin current is produced by the spin Hall effect will be described.

  As shown in FIG. 1, when a potential difference is applied to both ends of the spin orbit torque wiring 2 in the x direction, a current I flows along the x direction. When the current I flows, the first spin S1 oriented in the y direction and the second spin S2 oriented in the -y direction are each bent in the direction orthogonal to the current. The ordinary Hall effect and the spin Hall effect are common in that moving (moving) charges (electrons) can bend the direction of movement (moving), but the ordinary Hall effect causes charged particles moving in a magnetic field to move the Lorentz force. In contrast to being able to receive and bend the direction of movement, the spin Hall effect is largely different in that the direction of movement is bent only by electron movement (only current flow) even though there is no magnetic field.

Since the number of electrons in the first spin S1 is equal to the number of electrons in the second spin S2 in a nonmagnetic material (a material that is not a ferromagnetic material), the number of electrons in the first spin S1 going upward in the figure and downward The number of electrons of the second spin S2 to be directed is equal. Thus, the current as a net flow of charge is zero. A spin current without this current is particularly called a pure spin current.
When a current is caused to flow in the ferromagnetic material, the first spin S1 and the second spin S2 are bent in the opposite directions, which is the same. On the other hand, it is a state in which one of the first spin S1 and the second spin S2 is more in the ferromagnetic material, and as a result, a net flow of charge is generated (a voltage is generated). Therefore, the material of the spin orbit torque wiring 2 does not include a material consisting of only a ferromagnetic material.

Here, the electron flow in the first spin S1 J _↑, electrons flow J _↓ second spin S2, to represent the spin current and _{J S,} is defined by _J S = _{J ↑} -J _↓. In FIG. 1, J _S flows in the z direction in the figure as a pure spin current. Here, J _S is a flow of electrons having a polarizability of 100%.
In FIG. 1, when a ferromagnetic material is brought into contact with the top surface of the spin orbit torque wiring 2, the pure spin current diffuses into the ferromagnetic material and flows into it. That is, spins are injected into the first ferromagnetic layer 1.

 The material of the spin orbit torque wiring can be made of a material selected from the group consisting of tungsten, rhenium, osmium, iridium, and an alloy containing at least one or more of these metals. Tungsten, rhenium, osmium and iridium have 5d electrons in the outermost shell, and have large orbital angular momentum when five orbits of d orbit are degenerate. As a result, the spin-orbit interaction that causes the spin Hall effect increases, and spin current can be generated efficiently.

 The spin orbit torque wiring 2 may contain nonmagnetic heavy metal. Here, heavy metal is used in the meaning of the metal which has specific gravity more than yttrium. The spin orbit torque wiring 2 may be made of only nonmagnetic heavy metal.

  In this case, the nonmagnetic heavy metal is preferably a nonmagnetic metal having an atomic number of 39 or more, which has d electrons or f electrons in the outermost shell. Such nonmagnetic metals have a large spin-orbit interaction that causes the spin Hall effect. The spin orbit torque wiring 2 may be made of only a nonmagnetic metal having a large atomic number of 39 or more having d electrons or f electrons in the outermost shell.

Normally, when current flows in metal, all electrons move in the direction opposite to the current regardless of the direction of spin, while nonmagnetic metal with large atomic number having d electrons or f electrons in the outermost shell Since the spin-orbit interaction is large, the direction of electron movement depends on the direction of electron spins by the spin Hall effect, and a pure spin current J _S tends to be generated. In particular, when Ir is used as the nonmagnetic heavy metal, the spin Hall effect is large. Furthermore, perpendicular magnetic anisotropy larger than that of the conventional material can be added to the first ferromagnetic layer 1 at the interface between Ir and the first ferromagnetic layer 1.

  In addition, the spin track torque wiring 2 may contain a magnetic metal. Magnetic metal refers to ferromagnetic metal or antiferromagnetic metal. When the nonmagnetic metal contains a trace amount of magnetic metal, the spin-orbit interaction is enhanced, and the spin current generation efficiency with respect to the current flowing through the spin-orbit torque wiring 2 is increased. The spin orbit torque wiring 2 may be made of only an antiferromagnetic metal.

Spin-orbit interaction is caused by the intrinsic internal field of the material of the spin-orbit torque wiring material. Therefore, pure spin current is generated even in nonmagnetic materials. When a small amount of magnetic metal is added to the spin orbit torque wiring material, the spin current generation efficiency is improved because the magnetic metal itself scatters the electron spins flowing therethrough. However, if the addition amount of the magnetic metal is excessively increased, the generated pure spin current is scattered by the added magnetic metal, and as a result, the spin current decreases.
Therefore, it is preferable that the molar ratio of the magnetic metal to be added be sufficiently smaller than the molar ratio of the main component of the pure spin generating portion in the spin track torque wiring. As a rule, the molar ratio of the magnetic metal added is preferably 3% or less.

The spin track torque wire 2 may also include a topological insulator. The spin track torque wire 2 may be made of only the topological insulator. The topological insulator is a substance in which the inside of the substance is an insulator or a high resistance, but a spin-polarized metal state is generated on the surface thereof. There is something like an internal magnetic field called spin-orbit interaction in matter. Therefore, even if there is no external magnetic field, a new topological phase appears due to the effect of spin-orbit interaction. This is a topological insulator, and strong spin-orbit interaction and inversion symmetry breaking at the edge can generate pure spin current with high efficiency.
The topological insulators _{example, SnTe, Bi 1.5 Sb 0.5 Te} 1.7 Se 1.3, TlBiSe 2, Bi 2 Te 3, preferably such as _{(Bi 1-x Sb x)} 2 Te 3. These topological insulators can generate spin current with high efficiency.

<First magnetic field application layer>
The first magnetic field application layer 3 is provided to apply a magnetic field having a component in the x direction in FIG. 1 to the first ferromagnetic layer 1. The first magnetic field application layer 3 is spaced apart in the x direction of the first ferromagnetic layer 1. That is, as viewed from the first ferromagnetic layer 1, the first ferromagnetic layer 1 and the first magnetic field application layer 3 are spaced apart in the x direction (with respect to the first ferromagnetic layer 1). It is preferable that the distance between the first ferromagnetic layer 1 and the first magnetic field application layer 3 be close enough to prevent the magnetization M 1 of the first ferromagnetic layer 1 from swinging by the magnetic field generated by the first magnetic field application layer 3 .

  The first magnetic field application layer 3 is made of a ferromagnetic material having high coercivity. In FIG. 1, the magnetization M3 of the first magnetic field application layer 3 is oriented in the x direction in the xy in-plane direction. Here, the orientation direction of the magnetization M3 is not limited to the case where it completely coincides with the x direction, but may be deviated from the x direction within the range where the effect is exerted. For the first magnetic field application layer 3, for example, CoCrPt, Fe--Co alloy, Heusler alloy, ferrite oxide or the like can be used.

  The length of the first magnetic field application layer 3 in the x direction is preferably longer than the length (width) in the y direction and the length (thickness) in the z direction. The magnetization M 3 of the first magnetic field application layer 3 tends to be oriented in the long axis direction of the first magnetic field application layer 3. When the first magnetic field application layer 3 extends in the x direction, the magnetization M 3 is stably oriented in the x direction, and the x component of the magnetic field applied to the first ferromagnetic layer 1 can be increased.

<Via wiring>
The via wire 4 is provided at a position sandwiching the first ferromagnetic layer 1 in the spin track torque wire 2. The via wiring 4 extends in the z direction and bears connection with a semiconductor element or the like. The via wiring 4 shown in FIG. 1 extends from the spin track torque wiring 2 in the direction opposite to the first magnetic field application layer 3 (−z direction), but the direction in which the first magnetic field application layer 3 exists (z direction ) May be extended.

 For the via wiring 4, a material having excellent conductivity can be used. For example, copper, aluminum, silver or the like can be used as the via wiring 4. When the spin current magnetization reversal element 10 is used alone, the via wiring 4 may be omitted.

The spin current magnetization reversal element 10 may have components other than the first ferromagnetic layer 1, the spin orbit torque wiring 2, the first magnetic field application layer 3, and the via wiring 4. For example, in an actual element, the first magnetic field application layer 3 does not float at the position of the spin orbit torque wiring 2 in the z direction, but is stacked via an interlayer insulating film. For the interlayer insulating film, the same material as that used in a semiconductor device or the like can be used. For example, silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon carbide (SiC), chromium nitride (CrN), silicon carbonitride (SiCN), silicon oxynitride (SiON), aluminum oxide (Al ₂ O ₃ ) , Zirconium oxide (ZrO _x ) or the like is used.

In addition to this, a substrate or the like may be provided as a support. The substrate is preferably excellent in flatness, and as a material, for example, Si, AlTiC or the like can be used.
The present embodiment is not necessarily limited to the above configuration, and various modifications can be made without departing from the scope of the present invention.

(Principle of spin current magnetization reversal element)
Next, the principle of the spin current magnetization reversal element 10 will be described, and the magnetization M1 of the first ferromagnetic layer 1 is reversed by the magnetic field generated from the first magnetic field application layer 3 and the spin injected from the spin orbit torque wiring 2. Explain why it is possible.

  As shown in FIG. 1, when a current I is applied to the spin track torque wire 2, the first spin S1 and the second spin S2 are bent by the spin Hall effect. As a result, a pure spin current Js is generated in the z direction.

  The first ferromagnetic layer 1 is disposed in the z direction of the spin orbit torque wiring 2. Therefore, spins are injected from the spin orbit torque wiring 2 into the first ferromagnetic layer 1. The injected spin gives a spin orbit torque (SOT) to the magnetization M 1 of the first ferromagnetic layer 1.

  Since the first spins S1 injected into the first ferromagnetic layer 1 are oriented in the y direction, torque (spin trajectory torque) in the y direction is given to the magnetization M1 to rotate the magnetization M1 by 90 ° in the y direction Let Whether the magnetization M1 rotated by 90 ° returns to the z direction or to the −z direction (magnetization reversal) is performed in the state where there is no first magnetic field application layer 3 and no magnetic field is applied to the first ferromagnetic layer 1 Determined stochastically. That is, whether or not the magnetization is reversed is determined by the probability, and the element does not function stably. On the other hand, when the magnetic field from the first ferromagnetic layer 1 is applied to the first magnetic field application layer 3, the inversion probability of the magnetization M1 rotated by 90 ° by the spin orbit torque becomes asymmetric. As a result, the magnetization M1 rotated by 90 ° by the spin orbit torque can be stably inverted with less energy.

  As described above, according to the spin current magnetization reversal device 10 according to the first embodiment, since the first magnetic field application layer 3 is provided inside the device, magnetization reversal can be easily performed without applying a magnetic field from the outside of the device. It can be carried out. Further, since the first magnetic field application layer 3 continues to apply a magnetic field in a fixed direction to the first ferromagnetic layer 1, wiring or the like for generating a magnetic field is unnecessary. Therefore, the spin current magnetization reversal element 10 according to the first embodiment is excellent in integration, and can perform magnetization reversal stably and easily.

  The spin current magnetization reversal element 10 according to the first embodiment described above can be applied to nonvolatile random access memory (MRAM), high frequency components, magnetic sensors, and the like. For example, it can be used as a magnetic anisotropy sensor or an optical element utilizing a magnetic Kerr effect or a magnetic Faraday effect.

"2nd Embodiment"
The spin current magnetization reversal element 11 according to the second embodiment shown in FIG. 2 is characterized in that the first magnetic field application layer 3 and the spin orbit torque wiring 2 are in contact with each other. It is different from The other configuration is the same as that of the spin current magnetization reversal element 10 according to the first embodiment, and the same configuration is denoted by the same reference numeral, and the description is omitted.

  The spin orbit torque wiring 2 containing heavy metal has high electrical resistance. When the first magnetic field application layer 3 is a metal, heat generation due to the current I can be suppressed by connecting the first magnetic field application layer 3 made of a metal having a low resistance to the spin orbit torque wiring 2.

  The magnetization reversal of the spin current magnetization reversal element 11 utilizing the spin orbit torque (SOT) depends on the amount of injected spin. The amount of spin is determined by the current density of the current I. The current density of the current I is obtained by dividing the current I by the area of the surface directly below the first ferromagnetic layer 1 cut by the spin orbit torque wiring 2 in a plane perpendicular to the flow direction of the current. The current I flowing through the first magnetic field application layer 3 is concentrated on the spin orbit torque wiring 2 immediately below the first ferromagnetic layer 1. By connecting the first magnetic field application layer 3 to the spin orbit torque wiring 2, the current density does not decrease.

  Further, when the current I flows in the first magnetic field application layer 3, the current I is spin-polarized. When a spin-polarized current I is injected into the first ferromagnetic layer 1, spin transfer torque (STT) is applied to the magnetization M 1 of the first ferromagnetic layer 1. That is, the spin transfer torque (STT) for assisting the spin orbit torque (SOT) is added to the magnetization M1 of the first ferromagnetic layer 1 in a superimposed manner, and the inversion necessary to reverse the magnetization M1 of the first ferromagnetic layer 1 The current density is reduced.

  The distance between the first ferromagnetic layer 1 and the first magnetic field application layer 3 is preferably equal to or less than the spin diffusion length of the spin track torque wire 2. When the relationship is satisfied, spin transfer torque (STT) can be efficiently applied to the first ferromagnetic layer 1.

  FIG. 3 is a perspective view schematically showing a modification of the spin current magnetization reversal element according to the second embodiment. In the spin current magnetization reversal element 12 shown in FIG. 3, one of the via wires 4 is connected to the spin orbit torque wire 2 via the first magnetic field application layer 3.

  In the case of the spin current magnetization reversal element 12 shown in FIG. 3, spin polarization occurs when current passes through the first magnetic field application layer 3. When the spin-polarized current I 'flows, the spin Hall effect generates a first spin S1' and a second spin S2 '. The first spin S1 ′ and the second spin S2 ′ are a composite vector of the spin direction (y direction) by the spin Hall effect and the spin direction (x direction) polarized by passing through the first magnetic field application layer 3 Orient in the direction. The first spin S1 'and the second spin S2' are orthogonal to the orientation direction (z direction) of the magnetization M1 of the first ferromagnetic layer 1 regardless of the orientation in the xy plane. Therefore, the relationship between the direction of the injected spin and the direction of the magnetic field applied to the first ferromagnetic layer 1 by the first magnetic field application layer 3 does not change. On the other hand, since the spin transfer torque (STT) for assisting the spin orbit torque (SOT) is superimposed and added to the magnetization M1 of the first ferromagnetic layer 1, the magnetization M1 of the first ferromagnetic layer 1 is reversed. Inversion current density required for

  As described above, according to the spin current magnetization reversal elements 11 and 12 according to the second embodiment, heat generation due to the current I can be suppressed. Further, there is no need to provide an unnecessary interlayer insulating film, the element is simplified, and the manufacture is facilitated. Other effects and effects can be obtained similar to those of the spin current magnetization reversal element 10 of the first embodiment.

"3rd Embodiment"
In the spin current magnetization reversal elements 13a, 13b and 13c according to the third embodiment shown in FIG. 4, the cross section obtained by cutting the first magnetic field application layer 3 along the yz plane cuts the first ferromagnetic layer 1 along the yz plane. The point larger than the area is different from the spin current magnetization reversal element 11 according to the second embodiment. The other configuration is the same as that of the spin current magnetization reversal element 11 according to the second embodiment, and the same configuration is denoted by the same reference numeral, and the description will be omitted.

  In the spin current magnetization reversal element 13a shown in FIG. 4A, the width in the y direction of the first magnetic field application layer 3a is equal to the width in the y direction of the first ferromagnetic layer 1, and the height in the z direction is the first strength. The height is higher than the height of the magnetic layer 1 in the z direction. In the spin current magnetization reversal element 13b shown in FIG. 4B, the width in the y direction of the first magnetic field application layer 3b is wider than the width in the y direction of the first ferromagnetic layer 1, and the height in the z direction is the first. It is equal to the height of the ferromagnetic layer 1 in the z direction. Furthermore, in the spin current magnetization reversal element 13c shown in FIG. 4C, the width in the y direction of the first magnetic field application layer 3c is higher than the width in the y direction of the first ferromagnetic layer 1, and the height in the z direction is the first. It is higher than the z-direction height of the ferromagnetic layer 1.

  In any case shown in FIGS. 4A to 4C, since the first magnetic field application layers 3a, 3b and 3c overlap with the first ferromagnetic layer 1 when viewed from the x direction, the first A uniform x-direction magnetic field can be applied to the ferromagnetic layer 1. When the magnetic field applied to the first ferromagnetic layer 1 becomes uniform, it is suppressed that only a part of the magnetization in the first ferromagnetic layer 1 is reversed, and the stability of the magnetization reversal is enhanced.

  Among these, the spin current magnetization reversal element 13a shown in FIG. 4A is excellent in the integration of the element. In a magnetic memory in which spin current magnetization reversal elements are integrated, a plurality of spin current magnetization reversal elements are arranged in the xy plane. If the area of the first ferromagnetic layer 1 in the xy plane is large, it is necessary to increase the distance between adjacent spin current magnetization reversal elements. The cross-sectional area of the spin current magnetization reversal element 13a shown in FIG. 4A is increased by increasing the height in the z direction. The height in the z direction does not affect the accumulation.

  As described above, according to the spin current magnetization reversal elements 13a, 13b, and 13c according to the third embodiment, the magnetic field applied to the first ferromagnetic layer 1 can be made uniform. The inversion probability of the magnetization M1 is increased. Other effects and effects can be obtained similar to those of the spin current magnetization reversal element 10 of the first embodiment.

"4th Embodiment"
The spin current magnetization reversal element 14 according to the fourth embodiment shown in FIG. 5 differs from the spin current magnetization reversal element 11 according to the second embodiment in the shape of the first magnetic field application layer 3 d. The other configuration is the same as that of the spin current magnetization reversal element 11 according to the second embodiment, and the same configuration is denoted by the same reference numeral, and the description will be omitted.

  In the spin current magnetization reversal element 14 according to the fourth embodiment, the surface on the first ferromagnetic layer 1 side of the first magnetic field application layer 3 d forms an inclined surface. The cross-sectional area in the yz plane of the first magnetic field application layer 3 d gradually decreases toward the first ferromagnetic layer 1. Therefore, the magnetic flux density increases toward the end 3da of the first magnetic field application layer 3d on the first ferromagnetic layer 1 side. As the magnetic flux density increases, the strength of the magnetic field increases, so that less material can produce a stronger x-direction magnetic field.

  When comparing the area of the spin current magnetization reversal element 14 according to the fourth embodiment and the first ferromagnetic layer 1 in the yz plane, the first light projected onto the first surface T extending along the yz direction is used. The projection surface T1 of the magnetic layer 1 and the projection surface T3 of the first magnetic field application layer 3d are compared. In FIG. 5, although the area of the projection surface T3 and the area of the projection surface T1 are the same, if the area of the projection surface S3 is larger than the area of the projection surface T1, the magnetic field applied to the first ferromagnetic layer 1 becomes uniform. Do. Further, the side surfaces of the first ferromagnetic layer 1 may be inclined in order to compare the areas of the projection planes T1 and T3 with each other.

  As described above, according to the spin current magnetization reversal element 14 according to the fourth embodiment, the magnetic field strength applied to the first ferromagnetic layer 1 is increased by increasing the magnetic flux density of the first magnetic field application layer 3 d. Can. Other effects and effects can be obtained similar to those of the spin current magnetization reversal element 10 of the first embodiment.

"Fifth embodiment"
6 differs from the spin current magnetization reversal element 11 according to the second embodiment in that the spin current magnetization reversal element 15 according to the fifth embodiment includes the second magnetic field application layer 5. The other configuration is the same as that of the spin current magnetization reversal element 11 according to the second embodiment, and the same configuration is denoted by the same reference numeral, and the description will be omitted.

  The second magnetic field application layer 5 is made of the same material as the first magnetic field application layer 3 and is formed to have the same width, length and thickness as the first magnetic field application layer 3. The second magnetic field application layer 5 is disposed at a position where the first ferromagnetic layer 1 is sandwiched with the first magnetic field application layer 3. The direction of the magnetization M5 of the second magnetic field application layer 5 is oriented in the x direction. The magnetization M5 of the second magnetic field application layer 5 only needs to have a component in the x direction, and is preferably the same as the direction of the magnetization M3 of the first magnetic field application layer 3. The distance between the first ferromagnetic layer 1 and the second magnetic field application layer 5 is preferably equal to or less than the spin diffusion length of the spin orbit torque wiring 2.

The spin current magnetization reversal element 15 according to the fifth embodiment has the first magnetic field application layer 3 and the second magnetic field application layer 5 so as to sandwich the first ferromagnetic layer 1 in the x direction. The direction of the magnetic field passing through in the x direction can be made uniform.
As a result, the effect of disturbing the symmetry of the magnetization occurring in the first ferromagnetic layer 1 can be uniformly generated in all the positions of the first ferromagnetic layer 1, and in all the positions of the first ferromagnetic layer 1. The stability of the magnetization reversal can be enhanced. Other effects and effects can be obtained similar to those of the spin current magnetization reversal element 10 of the first embodiment.

"Sixth embodiment"
FIG. 7 is a spin according to the fifth embodiment in that the spin current magnetization reversal element 16 according to the sixth embodiment includes the magnetic shield layer 6 sandwiching the spin orbit torque wiring 2 and the first ferromagnetic layer 1 in the z direction. It differs from the flow magnetization reversal element 15. The other configuration is the same as that of the spin current magnetization reversal device 15 according to the fifth embodiment, and the same configuration is denoted with the same reference numeral, and the description is omitted.

  The magnetic shield layer 6 is disposed so as to sandwich the spin orbit torque wiring 2 and the first ferromagnetic layer 1 in the z direction. The magnetic shield layer 6 prevents an unnecessary magnetic field from intruding into the spin current magnetization reversal element 16 and reduces the generation of noise.

  For the magnetic shield layer 6, a known material having high magnetic barrier property can be used. For example, a soft magnetic material with an alloy containing Ni and Fe, Sendust, an alloy containing FeCo, an alloy containing Fe, Co, and Ni can be used.

  By providing the magnetic shield layer 6, it is possible to provide the spin current magnetization reversal element 16 which is not easily affected by the external magnetic field and excellent in stability not affected by the inversion of the spin current by the external magnetic field. In other words, the spin current magnetization reversal element 16 applies a magnetic field in the x direction necessary for the first ferromagnetic layer 1 inside the element, and a mechanism for applying a magnetic field from the outside is unnecessary. The other effects are the same as the effects obtained by the structure of the first embodiment.

"Seventh embodiment"
<Spin orbit torque type magnetoresistance effect element>
FIG. 8 is a view schematically showing a perspective view of a spin orbit torque type magnetoresistive effect element 17 according to the seventh embodiment. The spin orbit torque type magnetoresistance effect element 17 shown in FIG. 8 uses the spin current magnetization reversal element 15 of the fifth embodiment. The spin orbit torque type magnetoresistive effect element 17 shown in FIG. 8 includes a nonmagnetic layer 7 laminated on the first ferromagnetic layer 1 (z direction: the surface opposite to the surface in contact with the spin orbit torque wiring); And a second ferromagnetic layer 8 stacked on the nonmagnetic layer 7 (z direction). Further, an electrode layer 9 is provided on the second ferromagnetic layer 8. The other configuration is the same as that of the spin current magnetization reversal element 15 of the fifth embodiment, and the description is omitted.

 A laminated body (functional portion) in which the first ferromagnetic layer 1, the nonmagnetic layer 7, and the second ferromagnetic layer 8 are laminated functions in the same manner as a normal magnetoresistive element. The function portion functions by fixing the magnetization M8 of the second ferromagnetic layer 8 in one direction (z direction) and relatively changing the direction of the magnetization M1 of the first ferromagnetic layer 1. In the case of application to a coercive force difference type (pseudo spin valve type) MRAM, the coercive force of the second ferromagnetic layer 8 is made larger than the coercive force of the first ferromagnetic layer 1. In the case of application to MRAM of exchange bias type (spin valve type), the magnetization M8 of the second ferromagnetic layer 8 is fixed by exchange coupling with the antiferromagnetic layer.

 In the functional part, when the nonmagnetic layer 7 is made of an insulator, the functional part has the same configuration as a tunneling magnetoresistance (TMR) element, and when the functional part is made of metal, it is a giant magnetoresistance (GMR). The configuration is the same as that of the (Giant Magnetoresistance) element.

  The lamination structure of the functional part can adopt the lamination structure of a known magnetoresistive effect element. For example, each layer may be composed of a plurality of layers, or may be provided with another layer such as an antiferromagnetic layer for fixing the magnetization direction of the second ferromagnetic layer 8. The second ferromagnetic layer 8 is called a fixed layer or a reference layer, and the first ferromagnetic layer 1 is called a free layer or a storage layer.

  A known material can be used for the material of the second ferromagnetic layer 8. For example, a metal selected from the group consisting of Cr, Mn, Co, Fe and Ni, and an alloy exhibiting one or more of these metals and exhibiting ferromagnetism can be used. An alloy containing these metals and at least one or more elements of B, C, and N can also be used. Specifically, Co-Fe and Co-Fe-B can be mentioned.

Also, in order to obtain higher output, it is preferable to use a Heusler alloy such as Co ₂ FeSi as the material of the second ferromagnetic layer 8. The Heusler alloy contains an intermetallic compound having a chemical composition of X ₂ YZ, X is a transition metal element or noble metal element of Co, Fe, Ni, or Cu group on the periodic table, and Y is Mn, V , A transition metal of Cr or Ti group or an elemental species of X, and Z is a typical element of Group III to V. For _example, Co 2 _FeSi, etc. Co 2 MnSi and _{Co 2 Mn 1-a Fe a} Al b Si 1-b can be mentioned.

  In order to further increase the coercive force of the second ferromagnetic layer 8 to the first ferromagnetic layer 1, an antiferromagnetic material such as IrMn or PtMn may be used as a material in contact with the second ferromagnetic layer 8. Furthermore, in order to prevent the stray magnetic field of the second ferromagnetic layer 8 from affecting the first ferromagnetic layer 1, a synthetic ferromagnetic coupling structure may be used.

Known materials can be used for the nonmagnetic layer 7.
For example, when the nonmagnetic layer 7 is an insulator (in the case of a tunnel barrier layer), Al ₂ O ₃ , SiO ₂ , MgO, Ga ₂ O ₃ , MgAl ₂ O ₄ or the like may be used as the material. Can. Besides these materials, materials in which a part of Al, Si and Mg is substituted by Zn, Be or the like can also be used. Furthermore, a material in which Mg of MgAl ₂ O ₄ is substituted by Zn, a material in which Al is substituted by Ga or In, or the like can be used. Among these, MgO and MgAl ₂ O ₄ have high lattice matching with other layers.

  The functional unit may have other layers. For example, an underlayer may be provided on the surface of the first ferromagnetic layer 1 opposite to the nonmagnetic layer 7, and a cap layer may be provided on the surface of the second ferromagnetic layer 8 opposite to the nonmagnetic layer 7. You may have.

It is preferable that the layer disposed between the spin orbit torque wiring 2 and the first ferromagnetic layer 1 does not dissipate the spins propagating from the spin orbit torque wiring 2. For example, it is known that silver, copper, magnesium, aluminum, and the like have a long spin diffusion length of 100 nm or more and do not easily dissipate spin.
The thickness of this layer is preferably equal to or less than the spin diffusion length of the material constituting the layer. If the thickness of the layer is equal to or less than the spin diffusion length, the spins propagating from the spin orbit torque wiring 2 can be sufficiently transmitted to the first ferromagnetic layer 1.

  The electrode layer 9 may be made of a known material having high conductivity, and for example, aluminum, silver, copper, gold or the like may be used.

  The spin orbit torque type magnetoresistive effect element according to the seventh embodiment can control the direction of the magnetization of the magnetization M1 of the first ferromagnetic layer 1 by flowing a current along the spin orbit torque wiring 2 (write operation). Further, by flowing a current between the electrode layer 9 and the via wiring 4, it is possible to measure the difference in the resistance value of the functional part due to the difference in relative angle between the magnetization M 1 and the magnetization M 8 (reading operation). That is, it can be used as a recording element capable of recording and reading data. Other effects and effects can be obtained equivalent to those of the first embodiment.

  FIG. 9 is a process explanatory view showing an outline of an example process of manufacturing the spin orbit torque type magnetoresistive effect element 17 shown in FIG.

The surface of the substrate 20 on which the via interconnection 4 is formed is planarized by CMP (chemical mechanical polishing). Then, as shown in FIG. 9A, a layer 21 serving as a base of the spin track torque wiring is laminated on the planarized substrate. Then, the layer 21 is processed into a required shape by a technique such as photolithography to obtain the spin track torque wiring 2. Then, an insulating layer is formed to surround the spin orbit torque wiring 2. For the insulating layer, SiO _x , SiN _x or the like can be used. After the insulating layer is formed, the surface is planarized using CMP or the like.

 Then, as shown in FIG. 9B, on the spin track torque wiring 2 and the insulating layer, the layer 22 to be the base of the first ferromagnetic layer and the layer 23 to be the base of the nonmagnetic layer and the second ferromagnetic layer The underlying layer 24 is laminated. Then, these laminates are processed using a technique such as photolithography to fabricate the first ferromagnetic layer 1, the nonmagnetic layer 7, and the second ferromagnetic layer 8 (FIG. 9C).

 Next, as shown in FIG. 9D, the first magnetic field application layer 3 and the second magnetic field application layer 5 are stacked at predetermined positions using a mask or the like. Then, as shown in FIG. 9E, an insulating layer 25 is formed to cover them. Then, by laminating the electrode layer 9 on the insulating layer 25 and the second ferromagnetic layer 8, the spin orbit torque type magnetoresistive effect element 17 shown in FIG. 7 can be manufactured.

"8th Embodiment"
<Magnetic memory>
FIG. 10 is a plan view of the magnetic memory 30 provided with a plurality of spin orbit torque type magnetoresistance effect elements 17 (see FIG. 8). In the magnetic memory 30 shown in FIG. 10, the spin orbit torque type magnetoresistance effect elements 17 are arranged in a 3 × 3 matrix. FIG. 10 shows an example of a magnetic memory, and the number and arrangement of spin orbit torque type magnetoresistance effect elements 17 are arbitrary.

  One word line WL 1 to WL 3, one source line SL 1 to 3, and one read line RL 1 to 3 are connected to the spin orbit torque type magnetoresistance effect element 17.

 By selecting the word lines WL1 to WL3 and the source lines SL1 to 3 to which the current is applied, a current is supplied to the spin orbit torque wiring 2 of any spin orbit torque type magnetoresistance effect element 17 to perform the write operation. Further, by selecting the lead lines RL1 to 3 and the source lines SL1 to 3 to which the current is applied, the current is made to flow in the stacking direction of any spin orbit torque type magnetoresistance effect element 17 to perform the reading operation. The word lines WL1 to WL3, the source lines SL1 to SL3, and the read lines RL1 to RL3 to which current is applied can be selected by transistors or the like. That is, by reading data of an arbitrary element from the plurality of spin orbit torque type magnetoresistive elements 17, it can be used as a magnetic memory.

  FIG. 11 is a perspective view showing the main part of the magnetic memory according to the eighth embodiment. In FIG. 11, for the sake of simplicity, the wirings and the like that constitute the magnetic memory 30 are illustrated in a simplified manner. As shown in FIG. 11, the magnetic memory 30 may have an element unit 31 in which a plurality of spin orbit torque type magnetoresistance effect elements 17 are arrayed, and a magnetic field application unit 32 located on the outer periphery of the element unit 31. A magnetic shield layer 6 is provided in the z direction of the spin orbit torque type magnetoresistance effect element 17 shown in FIG.

  In the magnetic field application unit 32 illustrated in FIG. 11, a plurality of first magnetic field generation sources 32a and second magnetic field generation sources 32b are arranged as one pair. The first magnetic field generation source 32 a and the second magnetic field generation source 32 b correspond to the first magnetic field application layer 3 and the second magnetic field application layer 5, respectively. When the first magnetic field generation source 32a and the second magnetic field generation source 32b are provided in the magnetic field application unit 32, the magnetic state around the spin orbit torque type magnetoresistance effect element 17A located at the center and the end are located The magnetic state of the surroundings based on the spin orbit torque type magnetoresistance effect element 17B becomes equal. Therefore, the magnetic field applied to each spin orbit torque type magnetoresistance effect element 17 in the magnetic memory 30 becomes uniform, and the variation between the elements of reversal current density and reversal probability can be reduced.

  Furthermore, FIG. 12 is a cross-sectional view of another example of the magnetic memory according to the eighth embodiment cut along the x direction. As shown in FIG. 12, in addition to the first magnetic field application layer 3 and the second magnetic field application layer 5, the spin orbit torque type magnetoresistance effect element 17 has other magnetic field application layers 35 and 36 at different positions in the z direction. It may have 37, 38. The magnetic field application layers 35, 36, 37, 38 can be configured in the same manner as the first magnetic field application layer 3. When these magnetic field application layers 35, 36, 37, 38 are provided, the magnetic field applied to the functional part of the spin orbit torque type magnetoresistive element 17 is more oriented in the x direction.

"9th Embodiment"
<High frequency magnetic element>
FIG. 13 is a schematic cross-sectional view of the high frequency magnetic element according to the ninth embodiment. The high frequency magnetic element 40 shown in FIG. 9 includes a spin orbit torque type magnetoresistive effect element 17 shown in FIG. 8 and a DC power supply 41 connected to the spin orbit torque type magnetoresistive effect element 17.

  A high frequency current is input from the input terminal 42 of the high frequency magnetic element 40. The high frequency current produces a high frequency magnetic field. Further, when a high frequency current flows in the spin orbit torque wiring 2, a pure spin current is induced, and a spin is injected into the first ferromagnetic layer 1. The magnetization M1 of the first ferromagnetic layer 1 vibrates due to the high frequency magnetic field and the injected spin.

  The magnetization M1 of the first ferromagnetic layer 1 performs ferromagnetic resonance when the frequency of the high frequency current input from the input terminal 42 is a ferromagnetic resonance frequency. When the magnetization M1 of the first ferromagnetic layer 1 performs ferromagnetic resonance, the change in resistance value of the function part of the magnetoresistive effect becomes large. The resistance value change is read out from the output terminal 43 by applying a direct current or a direct current voltage by the direct current power supply 41.

  That is, when the frequency of the signal input from the input terminal 42 is the ferromagnetic resonance frequency of the magnetization M1 of the first ferromagnetic layer 1, the change in the resistance value output from the output terminal 43 becomes large, and other frequencies In this case, the change in resistance value output from the output terminal 43 becomes small. The high frequency magnetic element functions as a high frequency filter using the magnitude of the change in resistance value.

  Further, by applying a magnetic field to the first ferromagnetic layer 1 by the first magnetic field application layer 3, the magnetization M1 of the first ferromagnetic layer 1 is easily vibrated. If the magnetization M1 of the first ferromagnetic layer 1 easily vibrates, the amount of change in resistance increases, and the signal strength output from the output terminal 43 increases.

1: First ferromagnetic layer 2: Spin track torque wiring 3, 3a, 3b, 3c, 3d: First magnetic field application layer 4: Via wiring 5: Second magnetic field application layer 6: Magnetic shield layer 7: Nonmagnetic layer 8 : Second ferromagnetic layer 9: electrode layers 10, 11, 12, 13a, 13b, 13c, 14, 15, 16: spin current magnetization reversal elements 17, 17A, 17B: spin orbit torque type magnetoresistance effect element 20: substrate 21, 22, 23, 24: layer 30: magnetic memory 31: element unit 32: magnetic field application unit 32a: first magnetic field generation source 32b: second magnetic field generation source 35, 36, 37, 38: magnetic field application layer 40: high frequency Magnetic element 41: DC power supply 42: Input terminal 43: Output terminal M1, M3, M5, M8: Magnetization

Claims (13)

Spin track torque wiring extending in a first direction;
A first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring;
A first magnetic field application layer spaced apart in the first direction of the first ferromagnetic layer and applying an assist magnetic field to the first ferromagnetic layer to assist magnetization reversal of the first ferromagnetic layer; Spin current magnetization reversal element.   The spin current magnetization reversal element according to claim 1, wherein the magnetization easy axis of the first ferromagnetic layer is the second direction.   The spin current magnetization according to claim 1 or 2, wherein the magnetization easy axis of the first magnetic field application layer is the first direction, and the magnetic field generated by the first magnetic field application layer has at least a component in the first direction. Inversion element.   The spin current magnetization reversal element according to any one of claims 1 to 3, wherein the spin orbit torque wiring is in contact with the first magnetic field application layer.   5. The spin current magnetization rotation element according to claim 4, wherein a distance between the first ferromagnetic layer and the first magnetic field application layer is equal to or less than a spin diffusion length of the spin orbit torque wiring.   The area of the first magnetic field application layer projected from the first direction with respect to the first surface extending along the second direction is the first projected from the first direction with respect to the first surface. The spin current magnetization reversal element according to any one of claims 1 to 5, which is larger than the area of the ferromagnetic layer.   The second magnetic field application layer according to any one of claims 1 to 6, further comprising: a second magnetic field application layer sandwiching the first ferromagnetic layer with the first magnetic field application layer and generating a magnetic field having at least a component in the first direction. Spin current magnetization reversal element.   The spin current magnetization reversal according to any one of claims 1 to 7, further comprising via wires respectively extending in the second direction from at least two points sandwiching the first ferromagnetic layer in the spin orbit torque wire. element.   The spin current magnetization reversal element according to any one of claims 1 to 8, further comprising a magnetic shield layer sandwiching the spin orbit torque wiring and the first ferromagnetic layer in the second direction. The spin current magnetization reversal element according to any one of claims 1 to 9,
A nonmagnetic layer laminated on a surface of the first ferromagnetic layer opposite to a surface in contact with the spin orbit torque wiring;
A spin orbit torque type magnetoresistive effect element, comprising: the first ferromagnetic layer and a second ferromagnetic layer sandwiching the nonmagnetic layer.   A magnetic memory comprising a plurality of spin orbit torque type magnetoresistive elements according to claim 10.   The device further includes: an element portion in which a plurality of the spin orbit torque type magnetoresistance effect elements are arrayed; and a magnetic field application portion located on the outer periphery of the element portion and homogenizing the magnetic field in the central portion and the peripheral portion of the element portion. The magnetic memory according to claim 11.   A high frequency magnetic element comprising the spin orbit torque type magnetoresistive element according to claim 10.

Images