JP2018512764A - 三次元lc電気共振器 - Google Patents
三次元lc電気共振器 Download PDFInfo
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- 238000000926 separation method Methods 0.000 claims abstract description 91
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 230000005670 electromagnetic radiation Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 238000004088 simulation Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011149 active material Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000005445 natural material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
分離層と、
導電材料からなり、前記分離層の両面にそれぞれ形成される第1導電路と及び第2導電路と、を備え、
前記第1導電路は2つの重なり合う部分を含み、
前記第2導電路は2つの重なり合う部分を含み、誘電ループが前記2つの重なり合う部分を接続し、
前記第1導電路の前記重なり合う部分の各々が前記第2導電路の前記重なり合う部分とそれぞれ向かい合うように配置されることで、2つのキャパシタンスが互いに離間して形成され、
前記共振器が前記共振周波数で励起されているときに、前記誘電ループは該誘電ループ内及び導電路の周囲に磁場を発生させることに適しており、各キャパシタンスは前記分離層内に電場を発生させることに適している。
・前記分離層は、前記第1導電路の重なり合う部分と前記第2導電路の重なり合う部分との間に位置する量子へテロ構造を備える。
・前記量子ヘテロ構造には、第1半導体材料と第2半導体材料とが交互に位置するように積層され、第2半導体材料は第1半導体材料とは異なり、積層された各層は前記分離層の厚さ方向と垂直に延在する。
・前記第1半導体材料及び前記第2半導体材料は、GaAs及びGa1−xAlxAs、GaAs及びAlGaAs、InAs及びAlSb、GaN及びAlGaN、GaN及びInGaN、または、周期表における周期番号III〜Vの元素とSi、Ge、Cなどの元素からなるその他の任意の合金の組み合わせから選択される。
・さらに、前記第1半導体材料及び前記第2半導体材料は周期表における周期番号II〜VIの元素からなる合金、例えばHgTeから選択されてもよい。
・前記電場によって発生する電気エネルギーの少なくとも70%は、前記第1導電路と前記第2導電路の前記重なり合う部分の間に位置する前記分離層の領域に位置している。
・前記分離層は、前記キャパシタンスのうち一方を形成する前記第1導電路と前記第2導電路の前記重なり合う部分の間に位置する第1領域において第1厚さを有し、前記キャパシタンスのうち他方を形成する前記第1導電路と前記第2導電路の前記重なり合う部分の間に位置する第2領域において第2厚さを有し、第1厚さと第2厚さとは異なる厚さである。
・前記第2導電路の前記重なり合う部分は、離間距離を有して互いに離間して配置され、前記分離層の厚さは該離間距離以下である。
・前記第2導電路の前記重なり合う部分は離間距離Lxにて互いから離間しており、前記誘電ループは長手方向寸法Lyを有し、前記重なり合う部分の各々は長さW及び幅Yを有する。cを真空における光の速さ、fresを前記共振器の前記共振周波数としたとき、共振波長λはc/fresと等しく、Lx+2Y及びLy+W+Yは前記共振波長λより小さい。
・cを真空における光の速さ、fresを前記共振器の前記共振周波数とし、nを前記分離層の屈折率、λを共振波長としたとき、λはc/fresと等しく、前記分離層の厚さはλ/2nより小さい。
・前記共振周波数は100ギガヘルツ以上であり、該共振周波数において前記共振器は準安定状態で動作する(「準安定状態」において、磁場源は基本的に導電路を流れる電流であり、経時的な電場の変化(いわゆる「変位電流」)ではない。)
・前記共振器は、0.1以上300テラヘルツ以下の一または複数の共振周波数を有する。
・nを前記分離層の屈折率、λを共振波長、cを真空における光の速さ、fresを前記共振器の共振周波数としたとき、λはc/fresと等しく、前記第1導電路の重なり合う部分と前記第2導電路の重なり合う部分の間に位置し、キャパシタンスを形成する前記分離層の各領域は、(λ/2n)3以下の体積を有する。
・前記第1導電路は直線形状を有する。
・前記第2導電路は2つの平行なブランチを有するU字状であり、前記重なり合う部分は前記U字状のブランチの端部にそれぞれ位置する。
・前記第2導電路は非対称形状を有する。
・各導電路は、共振器に供給される電流発電機または共振器から取り出される電流を検出するための電流検出器に導電路を接続するための延長部を有する。
・前記共振器はアンテナを形成するとともに第2導電路に容量結合または誘電結合された金属パターンを有し、該金属パターンは前記共振器に照射される電磁放射の集光に適している。
T:分離層4の厚さ
Y:重なり合う端部31、32、51、52の幅
W:重なり合う端部31、32、51、52の長さ
Y×W:第2導電路5の各端部が第1導電路3に重なる面積
Lx:横断ブランチ54のループ53状に形成された部分の長さ
Ly:長手方向ブランチ55、56のループ状に形成された部分の長さ(重なり合う端部31、32、51、52を除く)
Lx+2×Ly:ループ53状に形成された部分の合計長さ(重なり合う端部31、32、51、52を除く)
(例1)
(例2及び3)
i)金属製の導電路は有限であり、これにより重なり合う端部31、32、51、52付近で電荷が蓄積可能となる。なお、一組の端部(31、32)または(51、52)が部材3または5の一方の両端に設けられていればよく、二組が同時に設けられていなくともよい。
ii)重なり合う端部31、32、51、52の数は対となる数である(2または2の倍数)。
(その他の例)
(その他の実施形態)
Claims (15)
- 所与の共振周波数が100ギガヘルツ以上であるインダクタンス/キャパシタンス型三次元電磁共振器(1)であって、
導電材料からなる第1導電路(3)と、
導電材料からなる第2導電路(5)と、
前記第1導電路(3)と前記第2導電路(5)との間に位置する量子へテロ構造を備え、両面にそれぞれ前記第1導電路(3)及び前記第2導電路(5)が形成される分離層(4)と、を備え、
前記第1導電路(3)は、2つの重なり合う部分(31、32)を含み、前記第2導電路(5)は2つの重なり合う部分(51、52)を含み、誘電ループ(53)が前記2つの重なり合う部分(51、52)を接続し、前記第1導電路(3)の前記重なり合う部分(31、32)の各々が前記第2導電路(5)の前記重なり合う部分(51、53)とそれぞれ向かい合うように配置されることで、2つのキャパシタンス(C1、C2)が互いに離間して形成され、前記誘電ループ(53)は該誘電ループ内及び導電路の周囲に磁場(H)を発生させることに適しており、各キャパシタンスは前記分離層(4)内に電場(E)を発生させることに適しており、
前記第1導電路(3)及び前記第2導電路(5)は、
有限であり、
前記重なり合う部分(31、32、51、52)が前記第1導電路(3)の中間部(33)と前記第2導電路(5)の長手方向ブランチ(55、56)の第1端部(31、51)と第2端部(32、52)となるように、互いに対して配置され、
第1キャパシタンス(C1)を形成する前記2つの第1端部(31、51)と、前記2つの第2端部(32、52)とが、前記第2キャパシタンス(C2)によって発生する前記電場とは逆符号の電場(E)を発生させることに適した第2キャパシタンス(C2)を形成し、
前記共振器が前記共振周波数で励起されているときに、前記電場を前記重なり合う部分(31、32、51、52)に限定する
ことを特徴とする共振器。 - 前記誘電ループ(53)によって前記分離層(4)に発生する前記磁場(H)は、前記キャパシタンスによって発生する前記電場(E)に平行な方向に延在する主成分を有する
ことを特徴とする請求項1に記載の共振器。 - 前記キャパシタンスの各々によって発生する前記電場(E)は、前記分離層(4)の厚さの方向(z)と平行な方向に延在する
ことを特徴とする請求項1または2に記載の共振器。 - 前記電場(E)によって発生する電気エネルギーの少なくとも70%は、前記第1導電路(3)と前記第2導電路(5)の前記重なり合う部分(31、51、32、52)の間の前記分離層(4)の領域に位置している
ことを特徴とする請求項1乃至3のいずれか一項に記載の共振器。 - 前記第2導電路(5)の前記重なり合う部分(51、52)は離間距離(Lx)にて互いから離間しており、前記誘電ループ(53)は長手方向寸法(Ly)を有し、前記重なり合う部分の各々は長さ(W)及び幅(y)を有し、cを真空における光の速さ、fresを前記共振器の前記共振周波数としたとき、共振波長λはc/fresと等しく、Lx+2Y及びLy+W+Yは前記共振波長λより小さい
ことを特徴とする請求項1乃至4のいずれか一項に記載の共振器。 - cを真空における光の速さ、fresを前記共振器の前記共振周波数とし、nを前記分離層(4)の屈折率、λを共振波長としたとき、λはc/fresと等しく、前記分離層の厚さ(T)はλ/2nより小さい
ことを特徴とする請求項1乃至5のいずれか一項に記載の共振器。 - 前記導電路のうち一方の導電路の前記長手方向ブランチは横手方向の延長部を有する
ことを特徴とする請求項1乃至6のいずれか一項に記載の共振器。 - nを前記分離層(4)の屈折率、λを共振波長、cを真空における光の速さ、fresを前記共振器の共振周波数としたとき、λはc/fresと等しく、前記第1導電路(3)の重なり合う部分(31、32)と前記第2導電路(5)の重なり合う部分(51、52)の間に位置してキャパシタンスを形成する前記分離層(4)の各領域は、(λ/2n)3以下の体積を有する
ことを特徴とする請求項1乃至7のいずれか一項に記載の共振器。 - 前記第1導電路(3)は直線形状を有する
ことを特徴とする請求項1乃至8のいずれか一項に記載の共振器。 - 前記キャパシタンス(C1、C2)の寸法及び配置と前記誘電ループ(53)の寸法及び配置とは、前記分離層(4)の中間面(x、y)に沿って、前記分離層(5)の厚さ(z)の方向に対して垂直に、前記共振周波数(fres)で離間し、前記電場(E)及び前記磁場(H)の主成分は前記厚さ(z)の方向に沿って延在している
ことを特徴とする請求項1乃至9のいずれか一項に記載の共振器。 - 前記第2導電路は2つの平行なブランチ(55、56)を有するU字状であり、前記重なり合う部分(51、52)は前記U字状のブランチの端部にそれぞれ位置する
ことを特徴とする請求項1乃至10のいずれか一項に記載の共振器。 - 前記第2導電路(5)は非対称形状を有する
ことを特徴とする請求項1乃至11のいずれか一項に記載の共振器。 - 前記共振器は、前記第1導電路及び前記第2導電路とともに配置され、p対(pは4以上の数)のキャパシタンスを形成する少なくとも一つの第3導電路を備える
ことを特徴とする請求項1乃至12のいずれか一項に記載の共振器。 - 前記第2導電路(5)に容量結合または誘電結合された金属製パターン(6、7、8)を備え、該金属製パターン(6、7、8)は前記共振器に照射される電磁放射(R)の集光に適している
ことを特徴とする請求項1乃至13のいずれか一項に記載の共振器。 - 請求項1乃至14のいずれか一項に記載の共振器(1)を複数備える電気共振アセンブリであって、第1導電体が複数の前記第1導電路(3)を電気的に接続し、第2導電体が複数の前記第2導電路(5)を電気的に接続する
ことを特徴とする電気共振アセンブリ。
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