JP2018206488A - Light emitting diode lighting device and light emitting diode array driver - Google Patents

Abstract

To provide a light emitting diode lighting device of pulsating lighting system capable of restraining dependency on the AC voltage supplied.SOLUTION: A light emitting diode lighting device 1 includes a light emitting diode array 10 where multiple light-emitting diodes are connected in series and divided into multiple light-emitting diode sets L, a rectification part 20 for converting the AC supplied into a pulsating flow, an upstream side current path changeover section 30A for changing over the current paths to the multiple light-emitting diode sets L in the light emitting diode array 10, a downstream side current path changeover section 30B for changing over the current paths from the multiple light-emitting diode sets in the light emitting diode array 10, and a current path setting section 40 setting the current paths for the multiple light-emitting diode sets L, by controlling the switching elements in the upstream side current path changeover section 30A and the downstream side current path changeover section 30B, corresponding to the voltage of the pulsating flow converted by the rectification part 20.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a light emitting diode illumination device and a light emitting diode array driving device.

  As the prior art described in the publication, the LED strings are driven by the pulsating voltage obtained by full-wave rectification of the commercial power supply VAC, and the operations of a plurality of current control circuits are selectively activated according to the pulsating voltage. Thus, there is an LED illumination device that switches the number of LED elements to be driven according to the pulsating voltage (see Patent Document 1).

JP 2013-37837 A

By the way, in the light emitting diode illumination, in the pulsating current lighting method (string method) driven by the pulsating voltage obtained by rectifying the alternating current, the number of light emitting diodes connected in series is set corresponding to the input alternating voltage. Since 90 Vrms to 265 Vrms is used as the AC voltage for the commercial power supply, in order to improve the convenience of the light-emitting diode illumination, the dependence of the commercial power supply supplied to the light-emitting diode illumination on the AC voltage can be suppressed. That is, it is required to be voltage free.
The present invention provides a pulsating lighting type light-emitting diode illuminating device and the like capable of suppressing dependency on supplied AC voltage.

  For this purpose, a light-emitting diode illuminating device to which the present invention is applied includes a light-emitting diode array in which a plurality of light-emitting diodes are connected in series and divided into a plurality of light-emitting diode sets, and a supplied alternating current as a pulsating current. A rectifying unit for conversion, a first current path switching unit that switches current paths to the plurality of light emitting diode groups by the switching element, and a second current path that switches current paths from the plurality of light emitting diode groups by the switching element Corresponding to the voltage of the pulsating current converted by the switching unit and the rectifying unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled, and the current paths for the plurality of light emitting diode groups are set. A current path setting unit to be set.

In such a light-emitting diode illuminating device, the first current path switching unit bypasses at least one light-emitting diode group from the upstream light-emitting diode group in the current flow in the light-emitting diode array, and the downstream light-emitting diode group. It is possible to provide a switching element that constitutes a current path leading to.
By doing so, the current path can be set finely.

In such a light-emitting diode illuminating device, the current path setting unit includes a plurality of light-emitting diode sets in parallel when the pulsating voltage converted by the rectifying unit is equal to or higher than a voltage for lighting the light-emitting diode sets in the light-emitting diode array. It can be characterized by being lit.
By doing in this way, the fluctuation | variation of the light quantity with respect to a pulsating voltage is suppressed.

In such a light emitting diode lighting device, the first current path switching unit forms a current path for the light emitting diode set in the first current path switching unit, and the second current path switching unit sets the current path for the light emitting diode set. The element may be in a complementary relationship.
In this way, the circuit configuration is facilitated.

Furthermore, in such a light-emitting diode illuminating device, the light-emitting diode array continues to light at least one light-emitting diode set when the pulsating voltage converted by the rectifier is less than the voltage for lighting the light-emitting diode set in the light-emitting diode array. It can be characterized by comprising a lighting continuation means.
By doing in this way, it is suppressed that a non-lighting period arises.

  Furthermore, such a light-emitting diode illuminating device may include a power factor adjusting unit that adjusts the power factor of the supplied alternating current when a plurality of light-emitting diode groups start lighting.

  From another point of view, the light-emitting diode illuminating device to which the present invention is applied includes a light-emitting diode array in which a plurality of light-emitting diodes are connected in series and divided into a plurality of light-emitting diode sets, and a supplied alternating current. A rectifying unit that converts to a pulsating flow, a first current path switching unit that switches current paths to the plurality of light emitting diode groups by a switching element, and a second that switches current paths from the plurality of light emitting diode groups by a switching element. In response to the voltage of the pulsating current converted by the current path switching unit and the rectification unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled to A drive unit including a current path setting unit configured to set a current path; and a housing that houses the light-emitting diode array and the drive unit.

In such a light-emitting diode illuminating device, a waterproof connector provided through the casing and connected to wiring for supplying an alternating current and a control signal is provided, and a pressure difference between the inner side and the outer side of the casing is provided. And a vent filter that suppresses the above.
By doing in this way, waterproofness improves more and it becomes possible to use it outdoors.

  Further, from another point of view, the light emitting diode array driving device to which the present invention is applied includes a rectifying unit that converts supplied alternating current into a pulsating flow, a plurality of light emitting diodes connected in series, and a plurality of light emitting diodes A first current path switching unit that switches a current path to a plurality of light-emitting diode groups by a switching element and a current path from the plurality of light-emitting diode groups by a switching element with respect to the light-emitting diode array divided into sets. In response to the voltage of the pulsating current converted by the second current path switching unit and the rectification unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled to emit a plurality of light emission A current path setting unit that sets a current path of the diode set.

  ADVANTAGE OF THE INVENTION According to this invention, the light emitting diode illuminating device of the pulsating lighting system etc. which made it possible to suppress the dependence with respect to the alternating voltage supplied can be provided.

It is a schematic diagram of the light emitting diode illuminating device to which this Embodiment is applied. It is a figure explaining the structure of the light emitting diode illumination main body. It is a figure explaining the connection relationship with respect to the pulsating voltage of each light emitting diode group in a light emitting diode array, and the electric current which flows into each light emitting diode group. (A) is a connection relation of each light emitting diode set, and (b) is a current flowing through each light emitting diode set. It is a figure explaining the connection relationship with respect to the pulsating voltage of each light emitting diode group in a light emitting diode array, and the electric current which flows into each light emitting diode group. (A) is a connection relation of each light emitting diode set, and (b) is a current flowing through each light emitting diode set. It is a block diagram of a light emitting diode illumination body. It is a figure which shows the electric current path which changes according to a pulsating current voltage. It is a figure which shows the electric current path which changes according to a pulsating current voltage. It is a figure which shows the on / off relationship of p channel field effect transistor pFET and n channel field effect transistor nFET with respect to a pulsating voltage. (A) is the pulsating voltage, (b) is the on / off relationship of the p-channel field effect transistor pFET, and (c) is the on / off relationship of the n-channel field effect transistor nFET. It is an example of the circuit of a light emitting diode illumination main body. It is a figure explaining the light emitting diode group L which lights up with respect to a pulsating voltage. (A) is a case where this embodiment is applied, and (b) is a case where this embodiment is not applied. It is a figure which shows the electric current which flows into each light emitting diode group measured with the circuit shown in FIG. (A) is the pulsating voltage, (b) is the current of the light emitting diode set L1, (c) is the current of the light emitting diode set L2, (d) is the current of the light emitting diode set L3, and (e) is The current of the light emitting diode set L4, (f) is the current of the light emitting diode set L5, and (g) is the current of the light emitting diode set L6.

Light emitting diode lighting is spreading as an alternative to light bulbs and fluorescent lamps in the field of low output such as indoor lighting.
In the light emitting diode illumination, for example, a light emitting diode array in which a plurality of light emitting diodes are connected in series is used. As a method of driving the light emitting diode array, there are a direct current lighting method and a pulsating current lighting method.

In the direct current lighting method, alternating current supplied by a commercial power source is converted into direct current, and the converted direct current voltage is applied to the light emitting diode array for driving.
On the other hand, the pulsating lighting method is driven by applying a pulsating current obtained by full-wave rectification of an alternating current supplied by a commercial power source to a light emitting diode array.
90Vrms to 265Vrms are used as AC for commercial power.

In the direct current lighting system, a direct current voltage converted from alternating current is applied to the light emitting diode array for driving. A DC lighting type drive circuit uses a capacitor (smoothing capacitor) having a large capacity in order to smooth a pulsating voltage (pulsating current) obtained by full-wave rectification of alternating current and convert it into direct current. In general, an electrolytic capacitor (chemical capacitor) is used as a capacitor having a large capacity. However, the electrolytic capacitor has a shorter life when used at a high temperature as compared with the light emitting diode. For example, when an electrolytic capacitor is used as the smoothing capacitor, the life of the drive circuit is about 1000 hours at an ambient temperature of 105 ° C. On the other hand, the lifetime of the light emitting diode is about 40,000 hours.
Therefore, the life of the drive circuit is exhausted before the life of the light emitting diodes constituting the light emitting diode array is exhausted. For this reason, it is difficult to integrally form the light emitting diode array and the drive circuit.

On the other hand, in the pulsating current lighting method, a pulsating voltage obtained by full-wave rectification of alternating current is applied to the light emitting diode array. The driving circuit of the pulsating lighting system is configured by a semiconductor device (element) having a life equivalent to that of a light emitting diode, such as a diode bridge for full-wave rectification of alternating current, and does not require a capacitor having a large capacity. Therefore, the pulsating current driving circuit can be configured without using an electrolytic capacitor. For this reason, the lifetime of the drive circuit is comparable to that of the light emitting diode.
Therefore, in the pulsating lighting system, the light emitting diode array and the drive circuit can be easily configured integrally.
Therefore, in the present embodiment, the pulsating lighting method is used in the light emitting diode illumination device 1.

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
<Light Emitting Diode Lighting Device 1>
FIG. 1 is a schematic diagram of a light-emitting diode illuminating device 1 to which the present exemplary embodiment is applied.
The light-emitting diode illuminating device 1 includes a light-emitting diode illumination main body 100 that includes a light-emitting diode and a light-emitting diode driving circuit that drives the light-emitting diode, a housing 200 that houses the light-emitting diode illumination main body 100, A waterproof connector 300 for connecting wiring for supplying alternating current (AC) from the light source and supplying a control signal for controlling the light emitting diode illumination main body 100, and a vent filter 400 having waterproofness and air permeability. Prepare.

The waterproof connector 300 and the vent filter 400 are provided across the outside and inside of the housing 200 so as to penetrate the housing 200.
The waterproof connector 300 is a waterproof connector. The input side (outside of the housing 200) of the waterproof connector 300 is connected to a control device that supplies commercial power and control signals through wiring such as cables, and the output side (inside of the housing 200) is connected to cables and the like. It is connected to the light emitting diode illumination main body 100 by wiring.
The vent filter 400 is provided to suppress the outside air pressure inside and outside the housing 200. The vent filter 400 has air permeability but is waterproof to prevent moisture from passing therethrough.

  When the light-emitting diode illuminating device 1 is used outdoors, when the light-emitting diode illumination main body 100 is housed in the housing 200, breathing action due to the difference between the internal pressure and the external air pressure of the housing 200, moisture that has entered the housing 200. Waterproofing measures are likely to be insufficient due to dew condensation due to water and infiltration of moisture (water) into the housing 200 from the cable.

Therefore, in the light-emitting diode illuminating device 1 to which the present exemplary embodiment is applied, the connector is a waterproof connector 300 and moisture infiltration from wiring such as a cable is suppressed, and a vent filter 400 is provided to The generation of the difference between the atmospheric pressure and the external atmospheric pressure is suppressed to suppress the respiratory action, and water is prevented from entering the housing 200.
That is, the light-emitting diode illuminating device 1 to which the present exemplary embodiment is applied has a waterproof measure that can be used outdoors. Note that a filler may be inserted or injected into the housing 200 in order to further suppress water intrusion into the housing 200.

  In the above description, the housing 200 houses the light-emitting diode illumination main body 100. However, the light-emitting diode drive circuit is one of the light-emitting diode array and the light-emitting diode drive circuit that drives the light-emitting diode array. You may comprise so that only it may be accommodated. In this case, the light emitting diode illumination device 1 becomes a light emitting diode driving device. Then, the light emitting diode array may be connected to the light emitting diode driving device through the waterproof connector 300 or a waterproof connector provided elsewhere.

  In addition, when the light-emitting diode illuminating device 1 is used indoors or when a waterproof measure is not required, the waterproof connector 300 and the vent filter 400 may not be provided. Furthermore, the case 200 is not required to be installed in other devices. Therefore, the light emitting diode illumination body 100 may be referred to as a light emitting diode illumination device.

Hereinafter, the light emitting diode illumination main body 100 will be described.
<Light Emitting Diode Lighting Main Body 100>
FIG. 2 is a diagram illustrating the configuration of the light emitting diode illumination main body 100.
The light-emitting diode illumination main body 100 includes a light-emitting diode array 10 in which a plurality of light-emitting diodes are connected in series, and a rectification unit 20 that rectifies full-wave rectified alternating current supplied from a commercial power source connected to the light-emitting diode illumination main body 100 into a pulsating flow. With.

  Further, the light emitting diode illumination main body 100 has switching elements (p-channel field effect transistors pFET2 to pFET8 in FIG. 5 described later), and the light emitting diodes are formed by the switching elements (n-channel field effect transistors nFET1 to nFET6 in FIG. 5 to be described later). A current path switching unit 30 that switches a current path flowing through the light emitting diode set L in the array 10 is provided. The current path switching unit 30 includes an upstream current path switching unit 30A that switches a current path on the side (upstream side) where current flows into the light emitting diode set L, and a side (downstream side) on the side where current flows from the light emitting diode set L. It is comprised from the downstream current path switching part 30B which switches a current path. The upstream current path switching unit 30A is an example of a first current path switching unit, and the downstream current path switching unit 30B is an example of a second current path switching unit.

The light-emitting diode illumination main body 100 includes switching elements included in each of the upstream current path switching unit 30A and the downstream current path switching unit 30B corresponding to the pulsating voltage (hereinafter referred to as the pulsating voltage Vp). A current path setting unit 40 that controls and sets a current path for the light emitting diode set L is provided.
The light emitting diode illumination main body 100 includes a drive power supply unit 50 that supplies power for driving the current path switching unit 30 and the current path setting unit 40.
Here, the rectifying unit 20, the current path switching unit 30, the current path setting unit 40, and the driving power source unit 50 are examples of the light emitting diode array driving device or the driving unit. The light emitting diode array driving device or driving unit may include a power factor adjusting unit 60 (see FIG. 9 described later) described later.

(Light emitting diode array 10)
The light emitting diode array 10 is configured by connecting a plurality of light emitting diodes in series. The plurality of light emitting diodes are divided into a plurality of light emitting diode groups. Here, the light-emitting diode array 10 includes, as an example, six light-emitting diode sets L1 to L6 (in the case where they are not distinguished from each other, they are expressed as light-emitting diode sets L). Note that the series connection means that the anode and the cathode are connected to each other between adjacent light emitting diodes. The light emitting diodes are connected so that the anode is on the upper side and the cathode is on the lower side in FIG. 2, the light emitting diode array 10 is connected in order of the light emitting diode set L1, the light emitting diode set L2,... From the output HV of the rectifying unit 20 in FIG. The light emitting diode set L may be called a string. Therefore, the pulsating lighting method is sometimes called a string method.

  In each light emitting diode set L, the number of light emitting diodes connected in series is, for example, seven. Therefore, the number of light emitting diodes in the light emitting diode array 10 composed of the six light emitting diode sets L is 42. The light emitting diode set L may be configured by connecting a plurality of light emitting diodes connected in series in parallel. For example, it may be configured by connecting three columns of seven light emitting diodes connected in series in parallel. In this case, the light emitting diode set L includes 21 light emitting diodes.

  Here, it is assumed that each light emitting diode has a forward voltage of 6 V as an example. That is, the light emitting diode is turned on when a voltage equal to or higher than the forward voltage (6 V in this example) is applied between both terminals. Therefore, each light emitting diode set L composed of seven light emitting diodes is turned on when a voltage of 42 V or more is applied between both terminals. Here, a voltage for lighting each light emitting diode group L is expressed as a lighting voltage Vf (42 V in this example).

  The number of light emitting diode groups L and the number of light emitting diodes constituting the light emitting diode group L may be other than those described above, and the forward voltage of the light emitting diodes may be other than 6V. Moreover, although the lighting voltage Vf of each light emitting diode group L is assumed to be the same, it may be different. If they are different, the lighting voltage of the highest light emitting diode set L may be set to the lighting voltage Vf.

As will be described later, the light emitting diode illumination main body 100 may be provided with a backflow prevention diode between the light emitting diode groups L. This backflow prevention diode suppresses current from flowing through the light emitting diode set L in the reverse direction.
Here, even when a backflow prevention diode is included in addition to the light emitting diode sets L1 to L6, the light emitting diode array 10 is used. If no backflow prevention diode is required, it is not necessary to provide a backflow prevention diode.

(Rectifying unit 20)
The rectification unit 20 performs full-wave rectification on the alternating current (AC) supplied from the commercial power source and outputs a pulsating flow. The rectifying unit 20 is configured by, for example, a diode bridge in which four diodes are connected in a bridge shape. As shown in FIG. 2, the high voltage side of the output of the rectifier 20 is expressed as output HV, and the low voltage side is expressed as output LV. Hereinafter, the output LV is represented as 0V and the output LV (0V), and the output HV is represented as the pulsating voltage Vp as the output HV (Vp). As an example, the alternating current supplied by the commercial power supply is set to 90 Vrms to 265 Vrms.

(Current path switching unit 30 and current path setting unit 40)
The upstream current path switching unit 30A in the current path switching unit 30 is connected to the output HV (Vp) of the rectifying unit 20, and is connected to the connection point between the light emitting diode set L2 and the light emitting diode set L3, and the light emitting diode set L3 and the light emission. It is connected to a connection point between the diode set L4, a connection point between the light emitting diode set L4 and the light emitting diode set L5, and a connection point between the light emitting diode set L5 and the light emitting diode set L6.

  The downstream side current path switching unit 30B in the current path switching unit 30 is connected to the output HV (Vp) and the output LV (0 V) of the rectification unit 20, and the connection point between the light emitting diode set L1 and the light emitting diode set L2. The connection point between the light emitting diode set L2 and the light emitting diode set L3, the connection point between the light emitting diode set L3 and the light emitting diode set L4, the connection point between the light emitting diode set L4 and the light emitting diode set L5, and the light emitting diode set L5 and the light emitting diode. The connection point with the set L6 and the side not connected to the light emitting diode set L5 of the light emitting diode set L6 are connected.

The current path setting unit 40 controls on / off of switching elements of the upstream current path switching unit 30A and the downstream current path switching unit 30B in the current path switching unit 30, and sets a current path for each light emitting diode set L. To do.
Details of the upstream current path switching unit 30A, the downstream current path switching unit 30B, and the current path setting unit 40 will be described later.

(Drive power supply unit 50)
The drive power supply unit 50 is connected to the output HV (Vp) and the output LV (0 V) of the rectifying unit 20 and drives the downstream current path switching unit 30B and the current path setting unit 40 from the pulsating flow rectified by the rectifying unit 20. Direct current (DC) voltages E1 and E2 (see FIG. 9 described later) are generated. The voltage E1 is, for example, 8V. The voltage E2 is 14V, for example. Therefore, they are expressed as voltage E1 (8V) and voltage E2 (14V).
The drive power supply unit 50 includes, for example, a DC / DC converter, and outputs a voltage E1 (8 V) and a voltage E2 (14 V) when the AC voltage supplied to the rectification unit 20 is in the range of 90 Vrms to 265 Vrms. Note that the drive power supply unit 50 includes a capacitor on the rectifying unit 20 side so that the voltage E1 (8 V) and the voltage E2 (14 V) are continuously output even when the pulsating voltage Vp is close to 0V. That is, even when the pulsating voltage is close to 0V, the drive power supply unit 50 keeps operating by the charge accumulated in the capacitor and continues to output the voltage E1 (8V) and the voltage E2 (14V).
In this specification, the configuration described above will be described as an example.

(Outline of operation of light emitting diode illumination main body 100)
Here, the operation | movement outline | summary of the light emitting diode illumination main body 100 is demonstrated.
FIG. 3 is a diagram for explaining the connection relation of each light emitting diode set L to the pulsating voltage Vp and the current I flowing through each light emitting diode set L in the light emitting diode array 10. 3A shows the connection relationship of each light emitting diode set L, and FIG. 3B shows the current I flowing through each light emitting diode set L. FIG. The flowing current is a hatched part.
Here, the case where the peak voltage of the pulsating voltage Vp is equal to or higher than the voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of light emitting diode sets connected in series in the light emitting diode array 10 is shown. Assuming that there are six light emitting diode sets L (light emitting diode sets L1 to L6) and the lighting voltage Vf of each light emitting diode set L is 42V, the peak voltage of the pulsating voltage Vp exceeds 252V (= 6Vf). In this case, the alternating current is 179 Vrms or higher, such as 265 Vrms.

  FIG. 3A shows one cycle (half cycle of alternating current) of the pulsating flow, the horizontal axis is time t, and the vertical axis is the pulsating flow voltage Vp. In FIG. 3A, the state where the light emitting diode groups L are arranged horizontally is parallel connection, and the state where the light emitting diode groups L are arranged vertically is series connection. In FIG. 3B, the horizontal axis represents time t, and the vertical axis represents the current I of each light emitting diode set L. As time passes, the time t0 to t13 is set, but the peak time of the pulsating voltage Vp is set to the time tp.

  3A and 3B, the pulsating voltage Vp that is the lighting voltage Vf (42V) is V1 (Vf = 42V), and the pulsating voltage Vp that is twice the lighting voltage Vf is V2 (2Vf = 84V). The pulsating voltage Vp that is three times the lighting voltage Vf is V3 (3Vf = 126V), the pulsating voltage Vp that is four times the lighting voltage Vf is V4 (4Vf = 168V), and the pulse that is five times the lighting voltage Vf. The flowing voltage Vp is V5 (5Vf = 210V), and the pulsating voltage that is six times the lighting voltage Vf is V6 (6Vf = 252V).

Hereinafter, FIGS. 3A and 3B will be described along time t.
During the period from time t0 to time t1 when the pulsating voltage Vp is less than V1 (Vf = 42V) (V <V1), the light emitting diode sets L1 to L6 are connected in parallel. However, the voltage applied to each light emitting diode group L does not reach the lighting voltage Vf. Therefore, none of the light emitting diode groups L is lit. The current flowing through each light emitting diode set L is zero.

  During the period from time t1 to time t2 when the pulsating voltage Vp is equal to or higher than V1 (Vf = 42V) and less than V2 (2Vf = 84V) (V1 ≦ V <V2), the light emitting diode groups L1 to L6 are connected in parallel. . All the light emitting diode groups L are lit because the lighting voltage Vf or higher is applied. At this time, current flows in parallel to each light emitting diode set L. The current I flowing through each light emitting diode set L is controlled so as to be the same between the light emitting diode sets L.

  During the period from time t2 to time t3 when the pulsating voltage Vp is V2 (2Vf = 84V) or more and less than V3 (3Vf = 126V) (V2 ≦ V <V3), the light emitting diode sets L1, L2, the light emitting diode sets L3, L4 and the light emitting diode sets L5 and L6 are connected in series, and the light emitting diode sets L1 and L2, the light emitting diode sets L3 and L4, and the light emitting diode sets L5 and L6 connected in series are connected in parallel. Since each of the light emitting diode sets L1 and L2, the light emitting diode sets L3 and L4, and the light emitting diode sets L5 and L6 connected in series is applied with a voltage (2Vf) or more that is twice the lighting voltage Vf of the light emitting diode set L. ,Light. At this time, the current flows in parallel through the light emitting diode sets L1 and L2, the light emitting diode sets L3 and L4, and the light emitting diode sets L5 and L6 connected in series. The current I flowing through each light emitting diode group L is controlled to be the same as the period from time t1 to time t2.

  Similarly, during the period from time t3 to time t4 when the pulsating voltage Vp is V3 (3Vf = 126V) or more and less than V4 (4Vf = 168V) (V3 ≦ V <V4), the light-emitting diode sets L1, L2, L3, The light emitting diode sets L4, L5, and L6 are connected in series, and the light emitting diode sets L1, L2, and L3 and the light emitting diode sets L4, L5, and L6 connected in series are connected in parallel. Since each of the light emitting diode sets L1, L2, and L3 and the light emitting diode sets L4, L5, and L6 connected in series is applied with a voltage (3Vf) or more that is three times the lighting voltage Vf of the light emitting diode set L, the light is turned on. To do. At this time, the current flows in parallel through the light emitting diode sets L1, L2, and L3 and the light emitting diode sets L4, L5, and L6 connected in series. The current I flowing through each light emitting diode group L is controlled to be the same as the period from time t1 to time t3.

Next, during the period from time t4 to time t5 when the pulsating voltage Vp is V4 (4Vf = 168V) or more and less than V5 (5Vf = 210V) (V4 ≦ V <V5), the light emitting diode sets L1, L2, and the light emitting diodes The sets L3 and L4 and the light emitting diode sets L5 and L6 are connected in series, and the light emitting diode sets L3 and L4 and the light emitting diode sets L5 and 6 connected in series are respectively connected in series. Connected in parallel.
A voltage (4 Vf) or more that is four times the lighting voltage Vf of the light emitting diode set L is applied to the columns of the light emitting diode groups L1, L2, L3, and L4 and the light emitting diode sets L1, L2, L5, and L6. Therefore, each light emitting diode set L is lit. At this time, the current I flowing through each light emitting diode set L flows in parallel through the series of light emitting diode sets L1, L2, L3, and L4 and the series of light emitting diode sets L1, L2, L5, and L6. That is, the sum of the current flowing through the light emitting diode sets L3 and L4 and the current flowing through the light emitting diode sets L5 and L6 flows through the light emitting diode sets L1 and L2. When the currents flowing through the light emitting diode sets L4 and L6 are controlled to be the same as the period from the time t1 to the time t4, the currents flowing from the time t1 to the time t4 in the light emitting diode sets L1 and L2 are 2 Double current will flow.

Similarly, during the period from time t5 to time t6 when the pulsating voltage Vp is V5 (5Vf = 210V) or more and less than V6 (6Vf = 252V) (V5 ≦ V <V6), the light emitting diode groups L1, L2, L3 , L4 are connected in series, and the light emitting diode sets L5, L6 are connected in parallel to the light emitting diode sets L1, L2, L3, L4 connected in series.
A voltage of 5 times the lighting voltage Vf of the light emitting diode set L (5 Vf) or more is applied to the light emitting diode set L1, L2, L3, L4, L5 column and the light emitting diode set L1, L2, L3, L4, L6 column. Is done. Therefore, each light emitting diode set L is lit. At this time, the current I flowing through each light emitting diode set L is obtained by paralleling the series of light emitting diode sets L1, L2, L3, L4, and L5 and the light emitting diode sets L1, L2, L3, L4, and L6 in parallel. Flowing. That is, a current that is the sum of the currents flowing through the light-emitting diode sets L5 and L6 flows through the light-emitting diode sets L1, L2, L3, and L4. If the currents flowing through the light emitting diode sets L5 and L6 are controlled to be the same as the period from the time t1 to the time t4, the light emitting diode sets L1 to L4 have two currents flowing from the time t1 to the time t4. Double current will flow.

The light emitting diode groups L1, L2, L3, L4, L5, and L6 are connected in series during a period from time t6 to time t7 when the pulsating voltage Vp is V6 (6Vf = 252V) or more (V6 ≦ V).
Since a voltage (6Vf) or more that is six times the lighting voltage Vf of the light emitting diode set L is applied to the light emitting diode set L1, L2, L3, L4, L5, and L6 columns, each light emitting diode set L is lit. . At this time, the current I flowing through each light emitting diode set L flows in series through the light emitting diode sets L1, L2, L3, L4, L5, and L6 connected in series. The current I flowing through each light emitting diode set L is controlled to be the same as the period from time t1 to time t4.
After time t7, since it becomes the reverse of the case demonstrated so far, description is abbreviate | omitted.

  As described above, in the light emitting diode illumination main body 100 to which the present embodiment is applied, the peak voltage of the pulsating voltage Vp is obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of the light emitting diode sets L. In the above case, all the light emitting diode groups L are lit during the period from time t1 to time t12 when the pulsating voltage Vp is equal to or higher than the lighting voltage Vf.

FIG. 4 is a diagram for explaining the connection relation of each light emitting diode set L to the pulsating voltage Vp and the current I flowing through each light emitting diode set L in the light emitting diode array 10. 4A shows the connection relationship of each light emitting diode set L, and FIG. 4B shows the current I flowing through each light emitting diode set L. FIG. The flowing current is a hatched part.
Here, a case where the peak voltage of the pulsating voltage Vp is less than a voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of light emitting diode sets connected in series in the light emitting diode array 10 is shown. Assuming that there are six light emitting diode sets L (light emitting diode sets L1 to L6) and the lighting voltage Vf of each light emitting diode set L is 42V, the peak voltage of the pulsating voltage Vp is less than 252V (= 6Vf). In this case, the alternating current is less than 179 Vrms, such as 90 Vrms. 4A and 4B show a case where the alternating current is 90 Vrms, in which the peak voltage of the pulsating voltage Vp is V3 (3 Vf = 126 V) or more and less than V4 (4 Vf = 168 V).

  FIG. 4A shows one cycle of pulsating flow (a half cycle of alternating current), where the horizontal axis represents time t and the vertical axis represents pulsating flow voltage Vp. The state where the light emitting diode groups L are arranged horizontally is parallel connection, and the state where the light emitting diode groups L are arranged vertically is series connection. In FIG. 4B, the horizontal axis represents time t, and the vertical axis represents the current I of each light emitting diode set L. Note that the time at time t (time t0, t1,...) Was the time at the same pulsating voltage Vp as in FIGS. The peak time of the pulsating voltage Vp is defined as time tp.

  When the alternating current is 90 Vrms, the peak voltage of the pulsating voltage Vp is 127 V, and therefore, from time t0 to time t3 shown in FIG. 3, and from time t10 to time t13 with the time tp interposed therebetween. Therefore, since it is the same as the case described with reference to FIGS. 3A and 3B, detailed description will be omitted.

  As described above, in the light emitting diode illumination main body 100 to which the present embodiment is applied, the peak voltage of the pulsating voltage Vp is obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of the light emitting diode sets L. Even if it is less than, all the light emitting diode groups L are lit during the period from time t1 to time t12 when the pulsating voltage Vp is equal to or higher than the lighting voltage Vf.

That is, in the light emitting diode illumination main body 100 to which the present embodiment is applied, if the peak voltage of the pulsating voltage Vp is equal to or higher than the lighting voltage Vf of the light emitting diode set L, the period during which the pulsating voltage Vp is equal to or higher than the lighting voltage Vf. , All the light emitting diode sets L are lit.
That is, the light emitting diode illumination main body 100 to which the present embodiment is applied (the same applies to the light emitting diode illumination device 1) can light all the light emitting diode groups L without depending on the supplied AC voltage. That is, the light-emitting diode illumination main body 100 (the same applies to the light-emitting diode illumination device 1) is a voltage breeze that does not depend on the supplied AC voltage.

(Details of current path switching unit 30)
Hereinafter, the current path switching unit 30 will be described in detail.
FIG. 5 is a block diagram of the light emitting diode illumination main body 100.
The light emitting diode array 10 includes backflow prevention diodes D1 to D6 in addition to the light emitting diode sets L1 to L6.
The backflow prevention diode D1 has an anode connected to the output HV (Vp) of the rectifier 20 and a cathode connected to the light emitting diode set L1. The backflow prevention diode D2 has an anode connected to the light emitting diode set L1 and a cathode connected to the light emitting diode set L2. The light emitting diode sets L3 to L6 are connected to the light emitting diode sets L2 to L6, similarly to the backflow prevention diode D2. In addition, the direction through which the current of the backflow prevention diodes D1 to D6 flows is connected to be the same as the direction of current flow (the direction from the upper side to the lower side) of the light emitting diode groups L1 to L6.

The upstream current path switching unit 30A in the current path switching unit 30 includes p-channel field effect transistors pFET2 to pFET8 and backflow prevention diodes D12 to D18.
The p-channel field effect transistor pFET2 has a source connected to the output HV (Vp) of the rectifier 20 and a drain connected to a connection point between the backflow prevention diode D2 and the light emitting diode set L2 via the backflow prevention diode D12. Yes. The p-channel field effect transistors pFET3 to pFET6 are connected in the same manner as the p-channel field effect transistor pFET2.

The p-channel field effect transistor pFET7 has a source connected to the connection point between the light emitting diode set L2 and the backflow prevention diode D3, and a drain connected to the connection point between the backflow prevention diode D5 and the light emitting diode set L5 via the backflow prevention diode D17. It is connected. The p-channel field effect transistor pFET8 has a source connected to the connection point between the light emitting diode set L4 and the backflow prevention diode D5, and a drain connected to the backflow prevention diode D6 and the light emitting diode set L6 via the backflow prevention diode D18. Connected to a point.
The gates of the p-channel field effect transistors pFET2 to pFET8 are controlled by signals from the current path setting unit 40.

The downstream current path switching unit 30B in the current path switching unit 30 includes constant current control circuits 31 to 36 provided corresponding to the n-channel field effect transistors nFET1 to pFET6 and the n-channel field effect transistors nFET1 to pFET6, respectively.
The n-channel field effect transistors nFET1 to nFET6 have their sources connected to the output LV of the rectifier 20. The n-channel field effect transistor nFET 1 has a drain connected to a connection point between the light emitting diode set L 1 and the backflow prevention diode D 2, and a gate connected to the constant current control circuit 31. The other n-channel field effect transistors nFET2 to nFET6 are connected in the same manner as the n-channel field effect transistor nFET1. However, the n-channel field effect transistor nFET6 has a drain connected to the side of the light emitting diode set L6 not connected to the backflow prevention diode D6.

FIG. 6 is a diagram showing a current path that changes corresponding to the pulsating voltage Vp. FIG. 6 shows a case where the pulsating voltage Vp is from V1 (Vf = 42V) to V3 (3Vf = 126V) shown in FIG.
FIG. 7 is a diagram showing a current path that changes corresponding to the pulsating voltage Vp. FIG. 7 shows a case where the pulsating voltage Vp is from V4 (4Vf = 168V) to V6 (6Vf = 252V) shown in FIG.
FIG. 8 is a diagram showing the on / off relationship of the p-channel field effect transistors pFET2 to pFET8 and the n-channel field effect transistors nFET1 to nFET6 with respect to the pulsating voltage Vp. 8A shows the pulsating voltage Vp, FIG. 8B shows the ON / OFF relationship of the p-channel field effect transistors pFET2 to pFET8, and FIG. 8C shows the n-channel field effect transistors nFET1 to nFET6. This is an on / off relationship. In FIGS. 8B and 8C, ON is indicated as ON and OFF is indicated as OFF.

Here, a case where the peak voltage of the pulsating voltage Vp is equal to or higher than the voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of the light emitting diode sets L will be described. Assuming that there are six light emitting diode sets L (light emitting diode sets L1 to L6) and the lighting voltage Vf of each light emitting diode set L is 42V, the peak voltage of the pulsating voltage Vp exceeds 252V (= 6Vf). In this case, the alternating current is 179 Vrms or higher, such as 265 Vrms.
First, the case where the pulsating voltage Vp is from V1 (Vf = 42V) to V3 (3Vf = 126V) will be described with reference to FIGS.

  When the pulsating voltage Vp is less than V1 (Vf = 42V) (V <V1) (period from time t0 to time t1 in FIG. 3), as shown in FIG. In the current path switching unit 30, the p-channel field effect transistors pFET2 to pFET6 and the n-channel field effect transistors nFET1 to nFET6 are turned on, and the p-channel field effect transistors pFET7 and pFET8 are turned off. However, since the pulsating voltage Vp is less than V1 (Vf = 42V), each light emitting diode set L is not lit.

  When the pulsating voltage Vp is V1 (Vf = 42V) or more and less than V2 (2Vf = 84V) (V1 ≦ V <V2) (period from time t1 to time t2 in FIG. 3), as shown in FIG. The current path setting unit 40 keeps the p-channel field effect transistors pFET2 to pFET6 and the n-channel field effect transistors nFET1 to nFET6 on and the p-channel field effect transistors pFET7 and pFET8 off in the current path switching unit 30. Then, a current path is formed via the p-channel field effect transistors pFET2 to 6 and the n-channel field effect transistors nFET1 to 6 that are turned on.

  The light emitting diode set L1 returns from the output HV (Vp) of the rectifying unit 20 to the output LV (0 V) of the rectifying unit 20 via the path a1 including the light emitting diode set L1 and the n-channel field effect transistor nFET1. Current flows through The n-channel field effect transistor nFET2 is routed from the output HV (Vp) of the rectifier 20 through a path a2 including the p-channel field effect transistor pFET2, the backflow prevention diode D12, the light emitting diode set L2, and the n-channel field effect transistor nFET2. Thus, a current flows so as to return to the output LV (0 V) of the rectifying unit 20. In the other light emitting diode sets L3 to L6, current flows through paths a3 to a6 configured in the same manner as the path a2 of the light emitting diode set L2. In this way, the light emitting diode sets L1 to L6 are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20.

  When the pulsating voltage Vp is V2 (2Vf = 84V) or more and less than V3 (3Vf = 126V) (V2 ≦ V <V3) (period from time t2 to time t3 in FIG. 3), as shown in FIG. The current path setting unit 40 turns on the p-channel field effect transistors pFET3 and pFET5 and the n-channel field effect transistors nFET2, nFET4 and nFET6 in the current path switching unit 30, and the p-channel field effect transistors pFET2, pFET4, pFET6 to pFET8 and n Channel field effect transistors nFET1, nFET3, and nFET5 are set off. Then, a current path is configured through the p-channel field effect transistors pFET3 and pFET5 that are turned on and the n-channel field effect transistors nFET2, nFET4, and nFET6.

  From the output HV (Vp) of the rectifying unit 20 to the light emitting diode sets L1 and L2, the output LV (0 V) of the rectifying unit 20 is transmitted via the path b1 including the light emitting diode sets L1 and L2 and the n-channel field effect transistor nFET2. Current flows back to). From the output HV (Vp) of the rectifier 20 to the light emitting diode sets L3 and L4, a path b2 including the p channel field effect transistor pFET3, the backflow prevention diode D13, the light emitting diode sets L3 and L4, and the n channel field effect transistor nFET4 is provided. A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via the route. From the output HV (Vp) of the rectifier 20 to the light emitting diode sets L5 and L6, a path b3 including the p channel field effect transistor pFET5, the backflow prevention diode D15, the light emitting diode sets L5 and L6, and the n channel field effect transistor nFET6 is provided. A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via the route. In this way, the light emitting diode sets L1 and L2, the light emitting diode sets L3 and L4, and the light emitting diode sets L5 and L6 are connected in series, and the light emitting diode sets L1 and L2 and the light emitting diode set L3 connected in series are connected. , L4, and the light emitting diode sets L5 and L6 are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifier 20.

  When the pulsating voltage Vp is V3 (3Vf = 126V) or more and less than V4 (4Vf = 168V) (V3 ≦ V <V4) (period from time t3 to time t4 in FIG. 3), as shown in FIG. The current path setting unit 40 turns on the p-channel field effect transistor pFET4 and the n-channel field effect transistors nFET3 and nFET6 in the current path switching unit 30, and the p-channel field effect transistors pFET2, pFET3, pFET5 to pFET8, and the n-channel field effect transistors. nFET1, pFET2, nFET4, and nFET5 are set to OFF. Then, a current path is formed via the p-channel field effect transistor pFET4 which is turned on and the n-channel field effect transistors nFET3 and nFET6.

  From the output HV (Vp) of the rectifying unit 20 to the light emitting diode sets L1, L2, and L3, via the path c1 including the light emitting diode sets L1, L2, and L3 and the n-channel field effect transistor nFET3, A current flows so as to return to the output LV (0 V). From the output HV (Vp) of the rectifier 20 to the light emitting diode sets L4, L5, and L6, the p channel field effect transistor pFET4, the backflow prevention diode D14, the light emitting diode sets L4, L5, L6, and the n channel field effect transistor nFET6 are used. A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via the path c2. In this manner, the light emitting diode sets L1, L2, and L3 and the light emitting diode sets L4, L5, and L6 are connected in series, and the light emitting diode sets L1, L2, L3, and the light emitting diode set L4 connected in series are connected. , L5 and L6 are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifier 20.

Next, the case where the pulsating voltage Vp is from V4 (4Vf = 168V) to V6 (6Vf = 252V) will be described with reference to FIGS.
When the pulsating voltage Vp is V4 (4Vf = 168V) or more and less than V5 (5Vf = 210V) (V4 ≦ V <V5) (period from time t4 to time t5 in FIG. 3), as shown in FIG. The current path setting unit 40 turns on the p-channel field effect transistor pFET7 and the n-channel field effect transistors nFET4 and nFET6 in the current path switching unit 30, and the p-channel field effect transistors pFET1 to pFET6, pFET8 and the n-channel field effect transistor nFET1 to nFET1. nFET3 and nFET5 are set to OFF. Then, a current path is formed through the p-channel field effect transistor pFET7 which is turned on and the n-channel field effect transistors nFET4 and nFET6.

  From the output HV (Vp) of the rectifying unit 20 to the light emitting diode sets L1, L2, L3, and L4, via the path d1 including the light emitting diode sets L1, L2, L3, L4, and the n-channel field effect transistor nFET4, A current flows so as to return to the output LV (0 V) of the rectifying unit 20. From the output HV (Vp) of the rectifying unit 20, the light emitting diode sets L1, L2, L5, and L6 include the light emitting diode sets L1 and L2, the p-channel field effect transistor pFET7, the backflow prevention diode D17, the light emitting diode sets L5, L6, A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via the path d2 including the n-channel field effect transistor nFET6. In this way, the light emitting diode sets L1, L2, the light emitting diode sets L3, L4, and the light emitting diode sets L5, L6 are connected in series with each other, and in series with the light emitting diode sets L1, L2 connected in series. The connected light emitting diode sets L3 and L4 and the light emitting diode sets L5 and L6 are connected in parallel. The light emitting diode sets L1, L2, L3, and L4 and the light emitting diode sets L1, L2, L5, and L6 are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20.

  When the pulsating voltage Vp is V5 (5Vf = 210V) or more and less than V6 (6Vf = 252V) (V5 ≦ V <V6) (period from time t5 to time t6 in FIG. 3), as shown in FIG. The current path setting unit 40 turns on the p-channel field effect transistor pFET8 and the n-channel field effect transistors nFET5 and nFET6 in the current path switching unit 30, and the p-channel field effect transistors pFET1 to pFET7 and the n-channel field effect transistors nFET1 to nFET4. Set to off. Then, a current path is formed through the p-channel field effect transistor pFET8 which is turned on and the n-channel field effect transistors nFET5 and nFET6.

  The light emitting diode sets L1, L2, L3, L4, and L5 have a path e1 that includes the light emitting diode sets L1, L2, L3, L4, L5, and the n-channel field effect transistor nFET5 from the output HV (Vp) of the rectifying unit 20. A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via the route. For the light emitting diode sets L1, L2, L3, L4, and L6, from the output HV (Vp) of the rectifying unit 20, the light emitting diode sets L1, L2, L3, and L4, the p-channel field effect transistor pFET8, the backflow prevention diode D18, the light emission A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via a path e2 including the diode set L6 and the n-channel field effect transistor nFET6. In this way, the light emitting diode sets L1, L2, L3, and L4 are connected in series, and the light emitting diode sets L5 and L6 are connected to the light emitting diode sets L1, L2, L3, and L4 connected in series. Are connected in parallel. The light emitting diode sets L1, L2, L3, L4, and L5 and the light emitting diode sets L1, L2, L3, L4, and L6 are arranged in parallel between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20. Connected.

  When the pulsating current voltage Vp is V6 (6Vf = 252V) or more (V6 ≦ V) (period from time t6 to time t7 in FIG. 3), as shown in FIG. In the switching unit 30, the n-channel field effect transistor nFET6 is turned on, and the p-channel field effect transistors pFET1 to pFET8 and the n-channel field effect transistors nFET1 to nFET5 are turned off. Then, a current path is formed via the ON n-channel field effect transistor nFET 6.

  From the output HV (Vp) of the rectifier 20 to the light emitting diode sets L1, L2, L3, L4, L5, and L6, from the light emitting diode sets L1, L2, L3, L4, L5, L6, and the n-channel field effect transistor nFET6 A current flows so as to return to the output LV (0 V) of the rectifying unit 20 via the path f. In this way, the light emitting diode groups L1, L2, L3, L4, L5, and L6 are connected in series and connected between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20.

  As described above, in the light emitting diode illumination main body 100 (light emitting diode illumination device 1) to which the present embodiment is applied, in the current path switching unit 30, the p-channel field effect transistors pFET1 to pFET1 are connected to the upstream current path switching unit 30A. The pFET 8 is used, and the n-channel field effect transistors nFET1 to nFET6 are used for the downstream current path switching unit 30B. Then, the current path setting unit 40 turns on the p-channel field effect transistors pFET1 to pFET8 of the upstream current path switching unit 30A in the current path switching unit 30 and the n-channel field effect transistors nFET1 to nFET6 of the downstream current path switching unit 30B. By setting / off, the current path of the light emitting diode set L is switched.

Here, by providing the p-channel field effect transistor pFET7, when the pulsating voltage Vp is equal to or higher than V4 (4Vf = 168V) and lower than V5 (5Vf = 210V) (V4 ≦ V <V5), the light-emitting diode set L1, In addition to the path d1 passing through L2, L3, and L4, a path d2 passing through the light emitting diode groups L1, L2, L5, and L6 is provided. The path d1 passing through the light emitting diode sets L1, L2, L3, and L4 is a path along the arrangement of the light emitting diode sets L, but the path d2 passing through the light emitting diode sets L1, L2, L5, and L6 is a light emitting diode. This route bypasses the sets L3 and L4.
If the p-channel field effect transistor pFET7 is not provided, the path d2 cannot be provided, and the light emitting diode sets L5 and L6 cannot be lit.

Further, by providing the p-channel field effect transistor pFET8, when the pulsating voltage Vp is V5 (5Vf = 210V) or more and less than V6 (6Vf = 252V) (V5 ≦ V <V6), the light emitting diode groups L1, L2 , L3, L4, and L5, a path e2 that passes through the light emitting diode groups L1, L2, L3, L4, and L6 is provided. The path e1 passing through the light emitting diode sets L1, L2, L3, L4, and L5 is a path along the arrangement of the light emitting diode sets L, but the path e2 passing through the light emitting diode sets L1, L2, L3, L4, and L6. Is a path that bypasses the light emitting diode set L5.
If the p-channel field effect transistor pFET8 is not provided, the path e2 cannot be provided and the light emitting diode set L6 cannot be turned on.
By providing the p-channel field effect transistors pFETs 7 and 8, all the light emitting diode groups L are lit in parallel.

The p-channel field effect transistors pFETs 7 and 8 are not provided, and the current path is not switched at time t4 when the pulsating voltage Vp in FIG. 3 becomes V4 (4Vf = 168V) and at time t5 when V5 (5Vf = 210V). It is also possible. That is, the state where the light emitting diode groups L1, L2, and L3 connected in series and the light emitting diode groups L4, L5, and L6 are connected in parallel is maintained in a period from time t3 to time t6, and the pulsating voltage Vp is V6 ( At time t6 when 6Vf = 252V), the current paths are switched so that the light emitting diode groups L1, L2, L3, L4, L5, and L6 are connected in series. In this case, since a constant current flows through the n-channel field effect transistors nFET3 and nFET6 in the period from time t4 to time t6 in FIG. 2, the n-channel field effect transistors nFET3 and nFET6 have n-channel field effect transistors nFETs with high power. It is necessary to use it. Therefore, the p-channel field effect transistors pFETs 7 and 8 are provided and the current paths are set finely to suppress the use of the n-channel field effect transistor nFET having a large power.
The light-emitting diode illumination main body 100 may be controlled as described above without providing the p-channel field effect transistors pFETs 7 and 8.

  In addition, when the peak voltage of the pulsating voltage Vp is less than the voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of the light emitting diode sets L, for example, when the alternating current is 90 Vrms, as described above. The peak voltage of the pulsating current voltage Vp is V3 (3Vf = 126V) or more and less than V4 (4Vf = 168V).

FIG. 9 is an example of a circuit of the light-emitting diode illumination main body 100. In FIG. 9, the main circuit components are indicated, and only the circuit components necessary for the description are denoted by reference numerals. In addition to the described circuit components, circuit components such as field effect transistors, bipolar transistors, diodes, resistors, capacitors, and inductors may be included.
As described above, the light emitting diode illumination main body 100 includes the light emitting diode array 10, the rectifying unit 20, the current path switching unit 30 (the upstream current path switching unit 30A and the downstream current path switching unit 30B), the current path setting unit 40, A drive power supply unit 50 is provided. Further, the light emitting diode illumination main body 100 includes a power factor adjusting unit 60.

  Also here, the light emitting diode array 10 includes six light emitting diode groups (light emitting diode groups L1 to L6), and the lighting voltage Vf of each light emitting diode group L is 42V. The light emitting diode array 10 includes a capacitor C and a resistor R connected in series between both terminals of each light emitting diode set L. In addition, the code | symbol of the capacitor | condenser C and resistance R is attached | subjected only to the capacitor | condenser and resistance which were connected in parallel with the light emitting diode group L1.

  This capacitor C discharges the charge accumulated in the capacitor C during other periods during the period in which the pulsating voltage Vp is less than the lighting voltage Vf (for example, the period from time t0 to time t1 in FIGS. 3 and 8). Then, the lighting of each light emitting diode group L is continued. Thereby, in the light emitting diode illumination main body 100, the period during which the pulsating voltage Vp is less than the lighting voltage Vf (for example, the period from time t0 to time t1 in FIGS. 3 and 8) does not become the non-lighting period. That is, the capacitor C suppresses the illuminance from being less than 5% at the peak so as to satisfy the PSE technical standard. The resistor R sets the speed of charge input / output with respect to the capacitor C. The capacitor C is an example of a lighting continuation unit.

  In addition, by providing the capacitor C in parallel with the light emitting diode set L, the capacitor C having a low withstand voltage can be applied. Therefore, the circuit design regarding the insulation distance and the like can be facilitated, and an inexpensive capacitor can be used. When a capacitor other than an electrolytic capacitor such as a ceramic capacitor is used as the capacitor C, a plurality of capacitors may be connected in parallel.

  The upstream current path switching unit 30A includes n-channel field effect transistors nFET12 to nFET18 provided corresponding to the p-channel field effect transistors pFET2 to pFET8 in addition to the p-channel field effect transistors pFET2 to pFET8. Each of the n-channel field effect transistors nFET12 to nFET18 drives the connected p-channel field effect transistors pFET2 to pFET8. The upstream current path switching unit 30A includes a resistor R1 and a Zener diode ZD1 provided for each of the p-channel field effect transistors pFET2 to pFET8. Note that the symbols of the resistor R1 and the Zener diode ZD1 are attached only to the resistor and the Zener diode provided in the p-channel field effect transistor pFET2.

  The connection relationship will be described using the p-channel field effect transistor pFET2 and the n-channel field effect transistor nFET12 as an example. The p-channel field effect transistor pFET2 has a source connected to the output HV (Vp) of the rectifying unit 20, a drain connected to the anode of the backflow prevention diode D12, and a gate via a resistor (no sign) for current limitation. The n-channel field effect transistor nFET 12 is connected to the drain.

  The p-channel field effect transistor pFET2 is connected by a Zener diode ZD1 and a resistor R1 whose source and gate are connected in parallel. The Zener diode ZD1 is connected in a direction in which a forward current flows from the gate to the source. The Zener diode ZD1 suppresses the gate-source voltage of the p-channel field effect transistor pFET2 from exceeding a predetermined voltage and prevents the p-channel field effect transistor pFET2 from being destroyed. The resistor R1 sets the gate of the p-channel field effect transistor pFET2 to the source voltage and turns off the p-channel field effect transistor pFET2 when the n-channel field effect transistor nFET2 is off.

  The n-channel field effect transistor nFET 12 has a source connected to the output LV (0 V) of the rectifying unit 20 and a gate connected to the current path setting unit 40. The n-channel field effect transistor nFET 12 has a source and a gate connected via a resistor (no symbol). This resistance (no symbol) is provided to keep the n-channel field effect transistor nFET 12 off.

When the n-channel field effect transistor nFET 12 is turned on (the gate becomes the voltage E2 (14V)), the drain becomes the source output LV (0V). Then, the p-channel field effect transistor pFET2 is turned on, and forms a path through which current flows from the output HV (Vp) of the rectifying unit 20 to the light emitting diode set L2 via the p-channel field effect transistor pFET2. On the other hand, when the n-channel field effect transistor nFET 12 is turned off (the gate becomes the output LV (0 V)), the drain becomes floating. Then, the gate of the p-channel field effect transistor pFET2 becomes the same voltage as the source via the resistor R1, and a path through which a current flows from the output HV (Vp) of the rectifier 20 to the light emitting diode set L2 is blocked.
That is, when the n-channel field effect transistor nFET 12 is turned on (the gate is at the voltage E2 (14V)), the p-channel field effect transistor pFET2 is turned on. When the n-channel field effect transistor nFET 12 is turned off (the gate is at the voltage E2 (14V)), the p-channel field effect transistor pFET2 is turned off.

  The connection relation and operation of the other p-channel field effect transistors pFET3 to pFET6 and the n-channel field effect transistors nFET13 to nFET16 are the same as the connection relation and operation of the p-channel field effect transistor pFET2 and the n-channel field effect transistor nFET12. .

The source of the p-channel field effect transistor pFET7 is connected to the connection point between the light emitting diode set L2 and the backflow prevention diode D3. Therefore, when the p-channel field effect transistor pFET7 is turned on, a path is formed in which a current flows from the connection point between the light-emitting diode set L2 and the backflow prevention diode D3 to the light-emitting diode set L5 via the p-channel field effect transistor pFET7. The source of the p-channel field effect transistor pFET8 is connected to the connection point between the light emitting diode set L4 and the backflow prevention diode D5. Therefore, when the p-channel field effect transistor pFET8 is turned on, a path is formed in which a current flows from the connection point between the light-emitting diode set L4 and the backflow prevention diode D3 to the light-emitting diode set L6 via the p-channel field effect transistor pFET8.
The connection relationship and operation between the p-channel field effect transistors pFET7 and pFET8 and the n-channel field effect transistors nFET17 and nFET18 are the same as the connection relationship and operation between the p-channel field effect transistor pFET2 and the n-channel field effect transistor nFET2.

  The downstream current path switching unit 30B includes n-channel field effect transistors nFET1 to nFET6, constant current control circuits 31 to 36 provided corresponding to the n-channel field effect transistors nFET1 to nFET6, a Zener diode ZD2, a resistor R10, and a capacitor C10. Is provided. The constant current control circuits 31 to 36 drive the n channel field effect transistors nFET1 to nFET6 at a constant current. The constant current control circuits 31 to 36 include operational amplifiers (op-amps) OP1 to OP6, respectively. Each of the operational amplifiers OP1 to OP6 includes a + input terminal (positive phase input terminal, non-inverting input terminal), a − input terminal (reverse phase input terminal, inverting input terminal), and an output terminal. Each of the constant current control circuits 31 to 36 includes resistors such as resistors R2 to R5 and a capacitor. Note that the symbols of the resistors R2 to R5 are attached only to the constant current control circuit 31.

  The connection relationship will be described using the n-channel field effect transistor nFET1 and the operational amplifier OP1 as an example. In the n-channel field effect transistor nFET1, the source is connected to the output LV (0 V) of the rectifier 20 via the resistor R2, the drain is connected to the connection point between the light emitting diode set L1 and the backflow prevention diode D2, and the gate is a current. It is connected to the output terminal of the operational amplifier OP1 through a resistor (no symbol) for limiting.

  The operational amplifier OP1 has a + input terminal connected to one side (terminal) of the Zener diode ZD2, the resistor R10, and the capacitor C10 connected in parallel via the resistor R5, and the npn bipolar transistor of the current path setting unit 40 It is connected to the collector of Tr1 via a resistor. The operational amplifier OP1 is connected to the connection point of the resistors R3 and R4, whose negative input terminals are connected in series. Terminals on the resistor R3 side of the resistors R3 and R4 connected in series are connected to a connection point between the n-channel field effect transistor nFET1 and the resistor R2. Terminals on the resistor R4 side of the resistors R3 and R4 connected in series are connected to the output LV (0 V) of the rectifying unit 20. The output terminal of the operational amplifier OP1 and the -input terminal are connected by a resistor (no symbol) and a capacitor (no symbol) connected in parallel.

  The voltage E2 (14V) of the drive power supply unit 50 is supplied to one side (terminal) of the Zener diode ZD2, the resistor R10, and the capacitor C10 connected in parallel. The other side (terminal) of the Zener diode ZD2, the resistor R10, and the capacitor C10 connected in parallel is connected to the output LV (0 V). The Zener diode ZD2 is in order from the other side (terminal) of the Zener diode ZD2, resistor R10 and capacitor C10 connected in parallel to the one side (terminal) of the Zener diode ZD2, resistor R10 and capacitor C10 connected in parallel. Are connected in the direction of current flow. That is, the Zener diode ZD2, the resistor R10, and the capacitor C10 connected in parallel generate a voltage set by the Zener diode ZD2. As an example, this voltage is 3V. This voltage is supplied as a reference voltage Vref to the + input terminal of the operational amplifier OP1. This reference voltage Vref is expressed as a reference voltage Vref (3 V).

  On the other hand, the npn bipolar transistor Tr1 has an emitter connected to the output LV (0 V) as described later. Therefore, when the npn bipolar transistor Tr1 is turned on, the collector of the npn bipolar transistor Tr1 becomes the output LV (0 V). This voltage is supplied as a reference voltage Vref to the + input terminal of the operational amplifier OP1. This reference voltage Vref is expressed as a reference voltage Vref (0 V). When the npn bipolar transistor Tr1 is turned off, the collector of the npn bipolar transistor Tr1 is opened, and the reference voltage Vref (3 V) is supplied to the + input terminal of the operational amplifier OP1. That is, the reference voltage (reference voltage Vref (0 V) / reference voltage Vref (3 V)) supplied to the + input terminal of the operational amplifier OP1 is switched by turning on / off the npn bipolar transistor Tr1.

  Then, a voltage obtained by dividing the voltage detected by the resistor R2 by the resistor R2 into the current flowing through the n-channel field effect transistor nFET1 is input to the negative input terminal of the operational amplifier OP1.

In the operational amplifier OP1, when the reference voltage Vref (3V) is supplied to the + input terminal of the operational amplifier OP1, the difference between the voltage input to the − input terminal and the reference voltage Vref (3V) input to the + input terminal is small. The voltage of the output terminal is set so that That is, when the voltage input to the − input terminal is smaller than the reference voltage Vref (3V) input to the + input terminal, the voltage of the output terminal is increased, that is, the gate voltage of the n-channel field effect transistor nFET 1 is increased, and n The current flowing through the channel field effect transistor nFET 1 is increased. Conversely, when the voltage input to the − input terminal is larger than the reference voltage Vref (3V) input to the + input terminal, the voltage of the output terminal is lowered, that is, the gate voltage of the n-channel field effect transistor nFET 1 is lowered, The current flowing through the n-channel field effect transistor nFET 1 is reduced. That is, when the reference voltage Vref (3 V) is input to the + input terminal, the n-channel field effect transistor nFET1 is turned on so that the current set by the reference voltage Vref (3 V) flows to the n-channel field effect transistor nFET1. To be controlled.
In this way, the constant current control circuit 31 operates so as to suppress the deviation of the current flowing through the n-channel field effect transistor nFET1 from the predetermined value by the operational amplifier OP1. That is, constant current control is performed.

When the reference voltage Vref (0 V) is supplied to the positive input terminal of the operational amplifier OP1, the operational amplifier OP1 lowers the voltage at the output terminal so that the voltage input to the negative input terminal becomes 0V. That is, in order to set the voltage input to the negative input terminal to 0V, the voltage between both terminals of the resistor R2 is set to 0V (the current flowing through the resistor R2 is 0). That is, the n-channel field effect transistor nFET1 is turned off.
That is, when the npn bipolar transistor Tr1 is on, the n-channel field effect transistor nFET1 is turned off, and when the npn bipolar transistor Tr1 is off, the n-channel field effect transistor nFET1 is turned on.

  The connection relationship between the other n-channel field effect transistors nFET2 to pFET6 and the operational amplifiers OP2 to Op6 is the same as the connection relationship between the n-channel field effect transistor nFET1 and the operational amplifier OP1.

The current path setting unit 40 includes npn bipolar transistors Tr1 to Tr5, Tr11, Tr12, Tr21, Tr22, Tr31, Tr32, Tr41, Tr42, Tr51, Tr52, resistors R11, R12, R21, R22, R31, R32, R41, R42. , R51, R52, etc. and diodes D21 to D27.
Each of the npn bipolar transistors Tr1 to Tr5 has an emitter connected to the output LV (0 V) of the rectifying unit 20 and a collector connected to each + input terminal of the operational amplifiers OP1 to OP5. The base will be described later.

  The resistors R11 and R12, resistors R21 and R22, resistors R31 and R32, resistors R41 and R42, and resistors R51 and R52 are connected in series. The resistors R11 and R12, resistors R21 and R22, resistors R31 and R32, resistors R41 and R42, and resistors R51 and R52 connected in series are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifier 20. Connected between. That is, one terminal of each of resistors R11 and R12, resistors R21 and R22, resistors R31 and R32, resistors R41 and R42, and resistors R51 and R52 connected in series (resistors R11, R21, R31, R41, and R51 side). Are connected to the output HV (Vp) of the rectifier 20 via a resistor (no symbol) for current limitation, and the other terminals (the resistors R12, R22, R32, R42, R52 side) are connected to the rectifier 20 Output LV (0 V).

Next, the connection relationship between the npn bipolar transistor Tr11 and the npn bipolar transistor Tr12 will be described. The npn bipolar transistor Tr11 has an emitter connected to the output LV (0 V) of the rectifier 20 and a base connected to a connection point between the resistor R11 and the resistor R12. The npn bipolar transistor Tr11 has a collector connected to the voltage E2 (14V) of the drive power supply unit 50 via a resistor and to the base of the npn bipolar transistor Tr12.
The npn bipolar transistor Tr12 has an emitter connected to the output LV (0V) of the rectifying unit 20, and a collector connected to a voltage E2 (14V) from the drive power supply unit 50 via a resistor (no symbol) for current limiting. ing.

  The connection relationship between the other npn bipolar transistors Tr21, Tr31, Tr41, Tr51 and the npn bipolar transistors Tr22, Tr32, Tr42, Tr52 is the same as the connection relationship between the npn bipolar transistor Tr11 and the npn bipolar transistor Tr12.

The collector of the npn bipolar transistor Tr11 is connected to the gate of the n-channel field-effect transistor nFET12, the gate of the n-channel field-effect transistor nFET14, and the gate of the n-channel field-effect transistor nFET16 via a resistor (no symbol) for current limitation. Connected.
The collector of the npn bipolar transistor Tr12 is connected to the bases of the npn bipolar transistors Tr1, Tr3, Tr5 via a resistor (no symbol) for current limitation. Note that the collector of the npn bipolar transistor Tr12 and the base of the npn bipolar transistor Tr3 are connected via two series-connected resistors (no symbol) for limiting current. Similarly, the collector of the npn bipolar transistor Tr12 and the base of the npn bipolar transistor Tr5 are connected via two series-connected resistors (no symbol) for limiting current.

  The collector of the npn bipolar transistor Tr21 is connected to the gates of the n-channel field effect transistors nFET13 and nFET15 via resistors (no symbol) for current limitation. Note that the connection point of two current-limiting resistors (no symbol) connecting the collector of the npn bipolar transistor Tr12 and the npn bipolar transistor Tr3 is connected to the collector of the npn bipolar transistor Tr21 via the diode D21. Yes. The diode D21 is connected in a direction in which current flows from the collector side of the npn bipolar transistor Tr12 to the collector side of the npn bipolar transistor Tr21.

  The collector of the npn bipolar transistor Tr22 is connected to the bases of the npn bipolar transistors Tr2 and Tr4 via a resistor (no symbol) for current limitation. Note that the collector of the npn bipolar transistor Tr22 and the base of the npn bipolar transistor Tr4 are connected via two series-connected resistors (no reference) for limiting current. The collector of the npn bipolar transistor Tr22 is connected to the gate of the n-channel field effect transistor nFET 14 via the diode D22 and a resistor for limiting current (no symbol). The diode D22 is connected in the direction in which current flows from the collector of the npn bipolar transistor Tr22 to the gate of the n-channel field effect transistor nFET14. The diode D22 is connected so as to be on the gate side of the n-channel field effect transistor nFET14.

The collector of the npn bipolar transistor Tr31 is connected via a diode D23 to a connection point of two current limiting resistors (no symbol) connecting the collector of the npn bipolar transistor Tr22 and the base of the npn bipolar transistor Tr4. Yes. The diode D23 is connected in the direction in which current flows from the collector side of the npn bipolar transistor Tr22 to the collector side of the npn bipolar transistor Tr31.
The collector of the npn bipolar transistor Tr31 is connected in series to a connection point of a diode D22 that connects the collector of the npn bipolar transistor Tr22 and the gate of the n-channel field effect transistor nFET 14 and a resistor (no symbol) for current limitation. The diode D24 is connected to the current limiting resistor (no sign). The diode D24 is connected in a direction in which current flows from the collector side of the npn bipolar transistor Tr22 to the collector side of the npn bipolar transistor Tr31.

  The collector of the npn bipolar transistor Tr32 is connected to the base of the npn bipolar transistor Tr3 and the gate of the n-channel field effect transistor nFET 17 via a resistor (no symbol) for current limitation.

The collector of the npn bipolar transistor Tr41 is connected via a diode D25 to the middle point of two current-limiting resistors (no symbol) connecting the collector of the npn bipolar transistor Tr12 and the npn bipolar transistor Tr5. The diode D25 is connected such that current flows from the collector side of the npn bipolar transistor Tr12 to the collector side of the npn bipolar transistor Tr41.
The collector of the npn bipolar transistor Tr41 is connected to the gate of the n-channel field effect transistor nFET 17 via a diode D26. The diode D26 is connected in a direction in which current flows from the gate side of the n-channel field effect transistor nFET 17 to the collector side of the npn bipolar transistor Tr41.

  The collector of the npn bipolar transistor Tr42 is connected to the base of the npn bipolar transistor Tr4 and the gate of the n-channel field effect transistor nFET 18 via a resistor (no symbol) for current limitation.

  The collector of the npn bipolar transistor Tr51 is connected to the gate of the n-channel field effect transistor nFET 18 via the diode D27. The diode D27 is connected in a direction in which current flows from the gate side of the n-channel field effect transistor nFET 18 to the collector side of the npn bipolar transistor Tr51.

  The collector of the npn bipolar transistor Tr52 is connected to the base of the npn bipolar transistor Tr5 via a resistor (no symbol) for current limitation.

  The resistors R11 and R12 are set so that the npn bipolar transistor Tr11 shifts from OFF to ON when the pulsating voltage Vp becomes twice the lighting voltage Vf (2Vf = 84V). Similarly, the resistors R21 and R22 are set so that the npn bipolar transistor Tr21 shifts from off to on when the pulsating voltage Vp becomes three times the lighting voltage Vf (3Vf = 126V). The resistors R31 and R32 are set so that the npn bipolar transistor Tr31 shifts from off to on when the pulsating voltage Vp is four times the lighting voltage Vf (4Vf = 168V). The resistors R41 and R42 are set so that the npn bipolar transistor Tr41 shifts from off to on when the pulsating voltage Vp is five times the lighting voltage Vf (5Vf = 210V). Further, the resistor R51 and the resistor R52 are set so that the npn bipolar transistor Tr51 shifts from off to on when the pulsating voltage Vp becomes six times the lighting voltage Vf (6Vf = 252V).

  The drive power supply unit 50 generates two voltages E1 (8V) and E2 (14V) from the pulsating voltage Vp. The voltage E1 (8V) is a voltage for driving the operational amplifiers OP1 to OP5. In FIG. 9, the illustration of the wiring through which the voltage E1 (8V) is supplied to the operational amplifiers OP1 to OP5 is omitted. The voltage E2 (14V) is supplied to each collector of the npn bipolar transistors Tr11, Tr12, Tr21, Tr22, Tr31, Tr32, Tr41, Tr42, Tr51, Tr52 via resistors (no sign) for current limitation. . The voltage E2 (14V) is supplied to one terminal of a Zener diode ZD2, a resistor R10, and a capacitor C10 connected in parallel.

  The power factor adjusting unit 60 includes an npn bipolar transistor Tr61 and a resistor R20 connected in series. The npn bipolar transistor Tr61 has an emitter connected to the output LV (0 V) of the rectifying unit 20 and a collector connected to one terminal of the resistor R20. The base of the npn bipolar transistor Tr61 is connected to the source of the n-channel field effect transistor nFET1. The other terminal of the resistor R20 is connected to the respective + input terminals of the operational amplifiers OP1 to OP6 via the resistor R5.

At the timing when the pulsating voltage Vp reaches V1 (Vf = 42V) and current starts to flow through each light emitting diode set L, no current flows through the light emitting diode sets L1 to L6. The terminal voltage increases. That is, the n-channel field effect transistors nFET1 to nFET6 are on and are in a state in which a large current tends to flow. Therefore, at the timing when the gate voltage of the n-channel field effect transistor nFET1 rises, the npn bipolar transistor Tr61 is turned on, and the reference voltage Vref (3V) supplied to the + input terminals of the operational amplifiers OP1 to Op6 is set in advance. The value is lowered from the value (3V).
This suppresses a rapid increase in the gate voltage of the n-channel field effect transistors nFET1 to nFET6. Thereby, a power factor is improved.
When there is no need to improve the power factor, it is not necessary to provide the power factor adjusting unit 60.

Hereinafter, the operation of the circuit of the light emitting diode illumination main body 100 shown in FIG. 9 will be described.
Here, a case where the peak voltage of the pulsating voltage Vp is equal to or higher than the voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of the light emitting diode sets L will be described. Assuming that there are six light emitting diode sets L (light emitting diode sets L1 to L6) and the lighting voltage Vf of each light emitting diode set L is 42V, the peak voltage of the pulsating voltage Vp exceeds 252V (= 6Vf). In this case, the alternating current is 179 Vrms or higher, such as 265 Vrms.
This will be described with reference to FIGS. In the case of being connected via a resistor, the connection relationship will be described ignoring the resistor.

  First, a case where the pulsating voltage Vp is less than V1 (Vf = 42V) (V <V1) will be described. In this case, the npn bipolar transistors Tr11, Tr21, Tr31, Tr41, Tr51 in the current path setting unit 40 do not satisfy the above-described condition for turning on. Therefore, the npn bipolar transistors Tr11, Tr21, Tr31, Tr41, Tr51 are off. Then, the base of each of the npn bipolar transistors Tr12, Tr22, Tr32, Tr42, and Tr52 is supplied with the voltage E2 (14V) from the drive power supply unit 50, and thus becomes the voltage E2 (14V) and is turned on. Then, the collectors of the npn bipolar transistors Tr12, Tr22, Tr32, Tr42, Tr52 become 0V (output LV). The collectors of the npn bipolar transistors Tr11, Tr21, Tr31, Tr41, Tr51 are at the voltage E2 (14V).

  The base of the npn bipolar transistor Tr1 is off because it is connected to the collector of the output LV (0 V) of the npn bipolar transistor Tr12. Since the base of the npn bipolar transistor Tr2 is connected to the collector of the output LV (0 V) of the npn bipolar transistor Tr22, it is off. The base of the npn bipolar transistor Tr3 is off because it is connected to the collector of the output LV (0 V) of the npn bipolar transistor Tr32. Since the base of the npn bipolar transistor Tr4 is connected to the collector of the output LV (0V) of the npn bipolar transistor Tr42, it is off. The base of the npn bipolar transistor Tr5 is off because it is connected to the collector of the output LV (0V) of the npn bipolar transistor Tr52. Also, any of the diodes D21 to D27 is set in a state where no current flows, and does not affect the diode.

  In the upstream current path switching unit 30A, the gates of the n-channel field effect transistor nFET12, the n-channel field effect transistor nFET14, and the n-channel field effect transistor nFET16 are connected to the collector of the voltage E2 (14V) of the npn bipolar transistor Tr11. Yes. Thus, the n-channel field effect transistor nFET 12, the n-channel field effect transistor nFET 14, and the n-channel field effect transistor nFET 16 are turned on. As a result, the p-channel field effect transistor pFET2, the p-channel field effect transistor pFET4, and the p-channel field effect transistor pFET6 are turned on.

  The gate of the n-channel field effect transistor nFET 13 and each gate of the n-channel field effect transistor nFET 15 are connected to the collector of the voltage E2 (14V) of the npn bipolar transistor Tr21. Therefore, the n-channel field effect transistor nFET 13 and the n-channel field effect transistor nFET 15 are turned on. As a result, the p-channel field effect transistor pFET3 and the p-channel field effect transistor pFET5 are turned on.

On the other hand, the gate of the n-channel field effect transistor nFET 17 is 0 V because it is connected to the collector which is the output LV (0 V) of the npn bipolar transistor Tr32. Therefore, the n-channel field effect transistor nFET 17 is turned off. This turns off the p-channel field effect transistor pFET7.
Similarly, the gate of the n-channel field effect transistor nFET 18 is 0 V because it is connected to the collector which is the output LV (0 V) of the npn bipolar transistor Tr42. Thus, the n-channel field effect transistor nFET 18 is turned off. This turns off the p-channel field effect transistor pFET8.

  In the downstream current path switching unit 30B, the + input terminals of the operational amplifiers OP1 to OP6 are set to the reference voltage Vref (3 V). Therefore, the n-channel field effect transistors nFET1 to nFET6 are turned on.

  As described above, when the pulsating voltage Vp is less than V1 (Vf = 42V) (V <V1), the p-channel field effect transistors pFET2 to pFET6 in the upstream current path switching unit 30A are on, and the p-channel field effect The transistors pFET7 and pFET8 are off. The n-channel field effect transistors nFET1 to nFET6 in the downstream current path switching unit 30B are on. Therefore, each light emitting diode group L is connected between the output HV (Vp) and the output LV (0 V) of the rectifier 20 by the p-channel field effect transistors pFET2 to pFET6 and the n-channel field effect transistors nFET1 to nFET6 that are turned on. Connected in parallel.

Next, the case where the pulsating voltage Vp is equal to or higher than V1 (Vf = 42V) and lower than V2 (2Vf = 84V) (V1 ≦ V <V2) will be described. This is the period from time t1 to time t2 in FIG.
As described above, since each light emitting diode set L is connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifier 20, each light emitting diode set L has a pulsating voltage Vp. When it becomes V1 (Vf = 42V), it lights in parallel.

A case where the pulsating voltage Vp is V2 (2Vf = 84V) or more and less than V3 (3Vf = 126V) (V2 ≦ V <V3) will be described. This is the period from time t3 to time t4 in FIG.
When the pulsating voltage Vp becomes V2 (2Vf = 84V), the npn bipolar transistor Tr11 in the current path setting unit 40 shifts from OFF to ON. Then, the voltage at the collector of the npn bipolar transistor Tr11 becomes the output LV (0 V), and the npn bipolar transistor Tr12 whose base is connected to this collector shifts from on to off. As a result, the collector of the npn bipolar transistor Tr12 becomes the voltage E2 (14V).

  Then, since the npn bipolar transistors Tr1, Tr3, Tr5 are connected to the collector of the npn bipolar transistor Tr12 whose base is at the voltage E2 (14V), the npn bipolar transistors Tr1, Tr3, Tr5 shift from off to on.

  The n-channel field effect transistors nFET12, nFET14, and nFET16 in the upstream current path switching unit 30A are connected to the collector of the npn bipolar transistor Tr11 whose gate is the output LV (0 V) via a resistor (no symbol). So it goes from on to off. Therefore, the p-channel field effect transistors pFET2, pFET4, and pFET6 shift from on to off.

  On the other hand, when the npn bipolar transistors Tr1, Tr3, Tr5 shift from OFF to ON, the n-channel field effect transistors nFET1, nFET3, nFET5 in the downstream current path switching unit 30B shift from ON to OFF.

  Note that the p-channel field effect transistors pFET3 and pFET5 and the n-channel field effect transistors nFET2, nFET4, and nFET6 are kept on, and the p-channel field effect transistors pFET7 and pFET8 are kept off. Therefore, the light emitting diode sets L1, L2, the light emitting diode sets L3, L4, and the light emitting diode sets L5, L6 are connected in series by the p channel field effect transistors pFET3, pFET5 and the n channel field effect transistors nFET2, nFET4, nFET6 that are turned on. The Then, the light emitting diode sets L1 and L2, the light emitting diode sets L3 and L4, and the light emitting diode sets L5 and L6 connected in series are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20. Lights up.

A case where the pulsating voltage Vp is V3 (3Vf = 126V) or more and less than V4 (4Vf = 168V) (V3 ≦ V <V4) will be described. This is the period from time t4 to time t5 in FIG.
When the pulsating voltage Vp becomes V3 (3Vf = 126V), the npn bipolar transistor Tr21 in the current path setting unit 40 shifts from OFF to ON. Then, the collector of the npn bipolar transistor Tr21 becomes the output LV (0 V), and the npn bipolar transistor Tr22 whose base is connected to this collector shifts from on to off. As a result, the collector of the npn bipolar transistor Tr22 becomes the voltage E2 (14V).

Then, since the npn bipolar transistors Tr2 and Tr4 are connected to the collector of the npn bipolar transistor Tr22 whose base is the voltage E2 (14V), the npn bipolar transistors Tr2 and Tr4 shift from off to on.
At this time, the base of the npn bipolar transistor Tr3 is connected to the collector of the output LV (0 V) of the npn bipolar transistor Tr21 via the diode D21. Therefore, the npn bipolar transistor Tr3 shifts from on to off.

Since the n-channel field effect transistors nFET13 and nFET15 in the upstream current path switching unit 30A are connected to the collector of the npn bipolar transistor Tr21 whose output is LV (0 V), the n-channel field effect transistors nFET13 and nFET15 shift from on to off. Therefore, the p-channel field effect transistors pFET3 and pFET5 shift from on to off.
Note that the n-channel field effect transistor nFET14 is connected from the gate to the collector of the npn bipolar transistor Tr22 that has become the voltage E2 (14V) via the diode D22, so that the n-channel field effect transistor nFET14 shifts from off to on. Thus, the p-channel field effect transistor pFET4 transitions from off to on.

  On the other hand, since the npn bipolar transistors Tr2 and Tr4 shift from off to on and the npn bipolar transistor Tr3 shifts from on to off, the n-channel transistors nFET2 and nFET4 of the operational amplifiers OP2 and OP4 in the downstream current path switching unit 30B From on to off, the n-channel field effect transistor nFET 3 goes from off to on.

  The n-channel field effect transistor nFET 6 is kept on, and the p-channel field effect transistors pFET 7 and pFET 8 are kept off. Accordingly, the light-emitting diode sets L1, L2, and L3 and the light-emitting diode sets L4, L5, and L6 are connected in series by the p-channel field effect transistor pFET4 and the n-channel field effect transistors nFET3 and nFET6 that are turned on. The light emitting diode sets L1, L2, and L3 and the light emitting diode sets L4, L5, and L6 connected in series are connected in parallel between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20, Light.

Next, the case where the pulsating voltage Vp is V4 (4Vf = 168V) or more and less than V5 (5Vf = 210V) (V4 ≦ V <V5) will be described. This is the period from time t4 to time t5 in FIG.
When the pulsating voltage Vp becomes V4 (4Vf = 168V), the npn bipolar transistor Tr31 in the current path setting unit 40 shifts from OFF to ON. Then, the collector of the npn bipolar transistor Tr31 becomes the output LV (0 V), and the npn bipolar transistor Tr32 whose base is connected to this collector shifts from on to off. As a result, the collector of the npn bipolar transistor Tr32 becomes the voltage E2 (14V).

  Then, since the npn bipolar transistor Tr3 is connected to the collector of the npn bipolar transistor Tr32 whose base is the voltage E2 (14V), the npn bipolar transistor Tr3 shifts from off to on. Since the npn bipolar transistor Tr4 is connected to the collector of the npn bipolar transistor Tr31 whose output is LV (0 V) via the diode D23, the npn bipolar transistor Tr4 shifts from on to off.

The n-channel field effect transistor nFET14 in the upstream current path switching unit 30A is connected to the collector whose gate is the output LV (0 V) of the npn bipolar transistor Tr31 via the diode D22 and the diode D24, so that it is turned off from on. Migrate to Therefore, the p-channel field effect transistor pFET4 shifts from on to off.
Since the n-channel field effect transistor nFET 17 is connected to the collector whose gate is the output HV (Vp) of the npn bipolar transistor Tr32, the n-channel field effect transistor nFET 17 shifts from off to on. Therefore, the p-channel field effect transistor pFET7 is switched from off to on.

  On the other hand, when the npn bipolar transistor Tr3 shifts from on to off and the npn bipolar transistor Tr4 shifts from off to on, the n-channel field effect transistor nFET3 shifts from on to off in the downstream current path switching unit 30B. The channel field effect transistor nFET 4 transitions from off to on.

  The n-channel field effect transistor nFET6 is kept on, and the p-channel field effect transistors pFET2, pFET3, pFET5, pFET6, pFET8, and the n-channel field effect transistors nFET1, nFET2, nFET3, and nFET5 are kept off. . Therefore, the light-emitting diode sets L1, L2, L3, and L4 and the light-emitting diode sets L1, L2, L5, and L6 are connected in series by the p-channel field effect transistor pFET7 and the n-channel field effect transistors nFET4 and nFET6, respectively. . The light emitting diode sets L1, L2, L3, and L4 and the light emitting diode sets L1, L2, L5, and L6 connected in series are parallel between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20. Connected to and lights up. Note that the light emitting diode sets L3 and L4 and the light emitting diode sets L5 and L6 connected in series to the light emitting diode sets L1 and L2 connected in series are connected in parallel.

Next, the case where the pulsating voltage Vp is equal to or higher than V5 (5 Vf = 210 V) and lower than V6 (6 Vf = 252 V) (V5 ≦ V <V6) will be described. This is the period from time t5 to time t6 in FIG.
When the pulsating voltage Vp becomes V5 (5Vf = 210V), the npn bipolar transistor Tr41 in the current path setting unit 40 shifts from OFF to ON. Then, the collector of the npn bipolar transistor Tr41 becomes the output LV (0 V), and the npn bipolar transistor Tr42 whose base is connected to this collector shifts from on to off. As a result, the collector of the npn bipolar transistor Tr42 becomes the voltage E2 (14V).

  Then, since the base of the npn bipolar transistor Tr4 is connected to the collector having the voltage E2 of the npn bipolar transistor Tr42, the npn bipolar transistor Tr4 shifts from off to on. In addition, since the npn bipolar transistor Tr5 is connected to the collector whose base is the output LV (0 V) of the npn bipolar transistor Tr41 via the diode D25, the npn bipolar transistor Tr5 shifts from on to off.

The n-channel field effect transistor nFET 17 in the upstream current path switching unit 30A is connected from the gate to the collector having the output LV (0 V) of the npn bipolar transistor Tr41 via the diode D26. . Therefore, the p-channel field effect transistor pFET 7 shifts from on to off.
Since the n-channel field effect transistor nFET 18 is connected to the collector of the npn bipolar transistor Tr42 whose voltage is E2 (14V), the n-channel field effect transistor nFET 18 shifts from off to on. Thus, the p-channel field effect transistor pFET 8 shifts from off to on.

  On the other hand, when the npn bipolar transistor Tr4 shifts from on to off and the npn bipolar transistor Tr5 shifts from off to on, the n-channel field effect transistor nFET4 shifts from on to off in the downstream current path switching unit 30B. The channel field effect transistor nFET 5 transitions from off to on.

  Note that the n-channel field effect transistor nFET 6 is kept on, and the p-channel field effect transistors pFET 2, pFET 3, pFET 4, pFET 5, pFET 6, and the n-channel field effect transistors nFET 1, nFET 2, nFET 3 are kept off. Therefore, the light-emitting diode sets L1, L2, L3, L4, and L5 and the light-emitting diode sets L1, L2, L3, L4, and L6 are respectively connected in series by the p-channel field effect transistor pFET8 and the n-channel field effect transistors nFET5 and nFET6 that are turned on. Connected to. The light emitting diode sets L1, L2, L3, L4, and L5 and the light emitting diode sets L1, L2, L3, L4, and L6 connected in series are the output HV (Vp) and the output LV (0 V) of the rectifier 20. It is connected in parallel and lights up. The light emitting diode set L5 and the light emitting diode set L6 are connected in parallel to the light emitting diode sets L1, L2, L3, and L4 connected in series.

Next, the case where the pulsating voltage Vp is V6 (6Vf = 252V) or more (V6 ≦ V) will be described. This is the period from time t6 to time t7 in FIG.
When the pulsating voltage Vp reaches V6 (6Vf = 252V), the npn bipolar transistor Tr51 in the current path setting unit 40 shifts from OFF to ON. Then, the collector of the npn bipolar transistor Tr51 becomes the output LV (0 V), and the npn bipolar transistor Tr52 whose base is connected to this collector shifts from on to off. As a result, the collector of the npn bipolar transistor Tr52 becomes the voltage E2 (14V).

  Then, since the base of the npn bipolar transistor Tr5 is connected to the collector having the voltage E2 (14V) of the npn bipolar transistor Tr52, the npn bipolar transistor Tr5 shifts from off to on.

  Since the n-channel field effect transistor nFET 18 in the upstream current path switching unit 30A is connected to the collector whose gate is the output LV (0 V) of the npn bipolar transistor Tr51 via the diode D27, it shifts from on to off. . Thus, the p-channel field effect transistor pFET 8 shifts from on to off.

  On the other hand, when the npn bipolar transistor Tr3 shifts from on to off, the n-channel field effect transistor nFET5 in the downstream current path switching unit 30B shifts from on to off.

The n-channel field effect transistor nFET 6 is kept on, and the p-channel field effect transistors pFET 2, pFET 3, pFET 4, pFET 5, pFET 6, pFET 7, and the n-channel field effect transistors nFET 1, nFET 2, nFET 3, pFET 4 are turned off. maintain. Therefore, all the p-channel field effect transistors pFET1 to pFET8 are turned off in the upstream current path switching unit 30A, and the n-channel field effect transistor nFET6 is turned on in the downstream current path switching unit 30B.
The light emitting diode sets L1, L2, L3, L4, L5, and L6 are connected in series by the n-channel field effect transistor nFET6 that is turned on. Then, the light emitting diode sets L1, L2, L3, L4, L5, and L6 connected in series are connected between the output HV (Vp) and the output LV (0 V) of the rectifying unit 20, and light up.

  As described above, the current path of each light emitting diode set L is switched by the current path setting unit 40. The current path setting unit 40 is an example, and other circuit configurations may be used. Further, the current path switching unit 30 and / or the current path setting unit 40 may be configured by an integrated circuit.

  The p-channel field effect transistor pFET used in the upstream current path switching unit 30A in the current path switching unit 30 has a small applied voltage. That is, a p-channel field effect transistor pFET with low power can be applied. Therefore, it is advantageous in terms of cost, heat generation, and efficiency.

  FIG. 10 is a diagram illustrating the light-emitting diode set L that is lit with respect to the pulsating voltage Vp. FIG. 10A shows a case where the present embodiment is applied, and FIG. 10B shows a case where the present embodiment is not applied. The case where the present embodiment is applied means that the current path switching unit 30 does not include the upstream current path switching unit 30A, and the n-channel field effect transistors nFET1 to nFET6 of the downstream current path switching unit 30B are connected in series. In this method, the n-channel field effect transistors nFET1 to nFET6 are sequentially turned off to switch the current path for the light-emitting diode set L. The flowing current is hatched.

  10A and 10B show a case where the peak voltage of the pulsating voltage Vp is equal to or higher than the voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of light emitting diode sets connected in series in the light emitting diode array 10. Show. Assuming that there are six light emitting diode sets L (light emitting diode sets L1 to L6) and the lighting voltage Vf of each light emitting diode set L is 42V, the peak voltage of the pulsating voltage Vp exceeds 252V (= 6Vf). In this case, the alternating current is 179 Vrms or higher, such as 265 Vrms.

As shown in FIG. 10A, in the case where the present embodiment is applied, the light emitting diode set L1 in the period from the time t1 to the time t12 in which the pulsating voltage Vp is V1 (Vf = 42V) or more, for example. All of ~ L6 are lit. Even if the pulsating voltage Vp is less than V1 (Vf = 42 V), such as the period from time t0 to time t1 and the period from time t12 to time t13, the light emitting diode groups L1 to L6 are lit. This is because the capacitor C and the resistor R connected in series are connected to the light emitting diode set L in parallel as shown in FIG. By discharging the electric charge accumulated in the capacitor C, the light emitting diode groups L1 to L6 are lit even when the pulsating voltage Vp is less than V1 (Vf = 42V). Here, since the capacitor C and the resistor R connected in series to each light emitting diode set L are connected in parallel, all the light emitting diode sets L are lit.
Thus, the luminous flux (minimum luminous flux) when the pulsating flow voltage Vp is less than V1 (Vf = 42V) is set to 10% or more of the luminous flux (maximum luminous flux) when the pulsating flow voltage Vp is V1 (Vf = 42V) or more. In FIG. 10A, when the pulsating voltage Vp is less than V1 (Vf = 42V), the luminous flux is smaller than in other cases, so the width is shown small.

  On the other hand, when the present embodiment shown in FIG. 10B is not applied, for example, at time t0 when the pulsating voltage Vp is less than V1 (Vf = 42V) (V <V1), the n-channel field effect transistor nFET1. At time t1 when the nFET 6 is set to ON and the pulsating voltage Vp becomes V1 (Vf = 42V), the current flows through the light emitting diode set L1 and the n-channel field effect transistors nFET1 to nFET6. The light emitting diode set L1 is turned on. Next, at time t2 when the pulsating voltage Vp becomes V2 (2Vf = 84V), the n-channel field effect transistor nFET1 is turned off, and the light-emitting diode sets L1, L2, n-channel field effect transistors nFET2 to nFET6 are passed through. Then, the current is set to flow, and the light emitting diode sets L1 and L2 are turned on. Then, as the pulsating voltage Vp rises, the n-channel field effect transistors nFET2 to nFET5 are sequentially turned off, and the light emitting diode groups L2 to L5 are sequentially turned on. Then, when the pulsating voltage Vp becomes V6 (6Vf = 252V), the n-channel field effect transistor nFET6 is turned off and the current is set to flow through the light emitting diode groups L1 to L6. The sets L1 to L6 are turned on.

  However, when this embodiment is not applied, for example, when the pulsating voltage Vp is equal to or higher than V1 (Vf = 42V) and lower than V2 (2Vf = 84V), the light emitting diode set L1 is lit, but other light emission The diode sets L2 to L6 are not lit. That is, when the pulsating voltage Vp is equal to or higher than V6 (6Vf = 252V), all the light emitting diode sets L1 to L6 are lit, but when the pulsating voltage Vp is less than V6 (6Vf = 252V), the light emitting diode set L1. A part of -L6 does not light up.

  In the case where the peak voltage of the pulsating voltage Vp is less than the voltage obtained by multiplying the lighting voltage Vf of the light emitting diode set L by the number of light emitting diode sets connected in series in the light emitting diode array 10, among the plurality of light emitting diode sets L Some light emitting diode sets L do not light up. For example, when the alternating current at which the peak voltage of the pulsating voltage Vp becomes 127 V is 90 Vrms, the light emitting diode sets L1 to L3 are turned on, but the other light emitting diode sets L4 to L6 are not turned on. That is, it does not become voltage free.

  As described above, the light emitting diode illumination main body 100 to which the present embodiment is applied can light all of the light emitting diode groups L when the pulsating voltage Vp is equal to or higher than the lighting voltage Vf of the light emitting diode groups L. Become free.

FIG. 11 is a diagram showing the current flowing through each light emitting diode group L measured by the circuit shown in FIG. 11A shows the pulsating voltage Vp, FIG. 11B shows the current of the light emitting diode set L1, FIG. 11C shows the current of the light emitting diode set L2, and FIG. 11D shows the light emitting diode set. 11E shows the current of the light emitting diode set L4, FIG. 11F shows the current of the light emitting diode set L5, and FIG. 11G shows the current of the light emitting diode set L6.
Note that the range indicated by the oblique lines is the case where the present embodiment shown in FIG. 10B is not applied.

  As shown in FIGS. 11B to 11G, a current flows through each light emitting diode group L when the pulsating voltage Vp is equal to or higher than the lighting voltage Vf. On the other hand, in the case where the present embodiment in which the current is indicated by a halftone dot is not applied, even when the pulsating voltage Vp is equal to or higher than the lighting voltage Vf, it is less than 6 times the lighting voltage Vf (6Vf = 252V). It can be seen that some of the light emitting diode sets L are not lit.

  The light-emitting diode illuminating body 100 (light-emitting diode illuminating device 1) described in the present embodiment can realize a total luminous flux of 6000 lm or more.

The circuit described in this embodiment mode is an example as described above, and a circuit having another configuration may be used. The n-channel field effect transistors nFET 1 to nFET 6, nFET 12 to nFET 18, and p-channel field effect transistors pFET 2 to pFET 8 may be power field effect transistors or insulated gate bipolar transistors (IGBTs). Further, a field effect transistor FET may be used instead of the npn bipolar transistors Tr1 to Tr5, Tr11, Tr12, Tr21, Tr22, Tr31, Tr32, Tr41, Tr42, Tr51, Tr52.
In addition, various modifications may be made without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Light emitting diode illuminating device, 10 ... Light emitting diode array, 20 ... Rectification part, 30 ... Current path switching part, 30A ... Upstream current path switching part, 30B ... Downstream side current path switching part, 31-36 ... Constant current control Circuit: 40 ... Current path setting unit, 50 ... Drive power supply unit, 60 ... Power factor adjustment unit, 100 ... Light-emitting diode illumination body, 200 ... Housing, 300 ... Waterproof connector, 400 ... Vent filter, D1-D6, D12- D18 ... Backflow prevention diode, D21 to D27 ... Diode, HV ... Output, L, L1 to L6 ... Light emitting diode group, LV ... Output, OP1 to OP6 ... Operational amplifier (operational amplifier), Tr1 to Tr5, Tr11, Tr12, Tr21, Tr22, Tr31, Tr32, Tr41, Tr42, Tr51, Tr52... Npn bipolar transistor, Vf .. lighting voltage Vp ... pulsating voltage, ZD1, ZD2 ... Zener diode

For this purpose, a light-emitting diode illuminating device to which the present invention is applied includes a light-emitting diode array in which a plurality of light-emitting diodes are connected in series and divided into a plurality of light-emitting diode sets, and a supplied alternating current as a pulsating current. A rectifying unit for conversion, a first current path switching unit that switches current paths to the plurality of light emitting diode groups by the switching element, and a second current path that switches current paths from the plurality of light emitting diode groups by the switching element Corresponding to the voltage of the pulsating current converted by the switching unit and the rectifying unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled, and the current paths for the plurality of light emitting diode groups are set. and a current path setting unit for setting a first current path switching unit, upstream of the light emitting die of current flow in the light emitting diode array A switching element that configures a current path that bypasses at least one light-emitting diode group and leads to a downstream light-emitting diode group from the node group, and the current path setting unit bypasses the light-emitting diode group and downstream When switching elements that constitute the current path leading to the light emitting diode group are turned on, control is performed so that the current from the upstream light emitting diode group flows in parallel to the bypassed light emitting diode group and the downstream light emitting diode group It is characterized by doing .
By doing so, the current path can be set finely.

From another point of view, the light-emitting diode illuminating device to which the present invention is applied includes a light-emitting diode array in which a plurality of light-emitting diodes are connected in series and divided into a plurality of light-emitting diode sets, and a supplied alternating current. A rectifying unit that converts to a pulsating flow, a first current path switching unit that switches current paths to the plurality of light emitting diode groups by a switching element, and a second that switches current paths from the plurality of light emitting diode groups by a switching element. In response to the voltage of the pulsating current converted by the current path switching unit and the rectification unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled to comprising a current path setting unit for setting a current path, a drive unit comprising a housing which accommodates a light emitting diode array and driver, a driving The first current path switching unit in FIG. 3 is a switching circuit that configures a current path from a light emitting diode set upstream of the current flow in the light emitting diode array to a downstream light emitting diode set bypassing at least one light emitting diode set. The current path setting unit in the drive unit has an element, and when the switching element constituting the current path that bypasses the light emitting diode group and reaches the downstream side light emitting diode group is turned on, the upstream side light emitting diode group Is controlled to flow in parallel to the bypassed light emitting diode group and the downstream light emitting diode group .

Further, from another point of view, the light emitting diode array driving device to which the present invention is applied includes a rectifying unit that converts supplied alternating current into a pulsating flow, a plurality of light emitting diodes connected in series, and a plurality of light emitting diodes A first current path switching unit that switches a current path to a plurality of light-emitting diode groups by a switching element and a current path from the plurality of light-emitting diode groups by a switching element with respect to the light-emitting diode array divided into sets. In response to the voltage of the pulsating current converted by the second current path switching unit and the rectification unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled to emit a plurality of light emission comprising a current path setting unit for setting the diode pairs of the current path, a first current path switching unit, the current flow in the light emitting diode array It has a switching element that configures a current path from the upstream light emitting diode set to at least one light emitting diode set to reach the downstream light emitting diode set, and the current path setting unit bypasses the light emitting diode set. When the switching element constituting the current path leading to the downstream side light emitting diode group is turned on, the current from the upstream side light emitting diode group flows in parallel to the bypassed light emitting diode group and the downstream side light emitting diode group. It is characterized by controlling as follows .

Claims (9)

A light-emitting diode array in which a plurality of light-emitting diodes are connected in series and divided into a plurality of light-emitting diode sets;
A rectification unit that converts supplied alternating current into pulsating flow;
A first current path switching unit that switches current paths to a plurality of the light emitting diode groups by a switching element;
A second current path switching unit that switches current paths from the plurality of light emitting diode groups by a switching element;
Corresponding to the voltage of the pulsating current converted by the rectifying unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled, and current paths for the plurality of light emitting diode groups are set. A current path setting unit to be set;
A light-emitting diode illuminating device.   The first current path switching unit configures a current path from a light emitting diode set upstream of a current flow in the light emitting diode array to a downstream light emitting diode set bypassing at least one light emitting diode set. The light emitting diode illumination device according to claim 1, further comprising a switching element.   The current path setting unit is characterized in that a plurality of light emitting diode sets are lit in parallel when the pulsating voltage converted by the rectifying unit is equal to or higher than a voltage for lighting the light emitting diode sets in the light emitting diode array. The light-emitting diode illuminating device according to claim 1 or 2.   A switching element that constitutes a current path for the light emitting diode set in the first current path switching unit and a switching element that constitutes a current path for the light emitting diode set in the second current path switching unit are complementary. The light-emitting diode illuminating device according to any one of claims 1 to 3, wherein the light-emitting diode illuminating device is provided.   The light emitting diode array includes a lighting continuation unit that continues lighting the at least one light emitting diode group when the pulsating voltage converted by the rectifying unit is less than a voltage for lighting the light emitting diode group in the light emitting diode array. The light-emitting diode illuminating device according to any one of claims 1 to 4.   6. The light emitting diode according to claim 1, further comprising: a power factor adjusting unit that adjusts a power factor of the supplied alternating current when the plurality of light emitting diode groups start lighting. 7. Lighting device. A light-emitting diode array in which a plurality of light-emitting diodes are connected in series and divided into a plurality of light-emitting diode sets;
A rectifying unit that converts the supplied alternating current into a pulsating flow, a first current path switching unit that switches a current path to the plurality of light emitting diode groups by a switching element, and a plurality of the light emitting diode groups by a switching element. A switching element in the first current path switching unit and the second current path switching unit corresponding to the voltage of the pulsating current converted by the rectification unit, A drive unit comprising: a current path setting unit configured to control and set a current path for a plurality of the light-emitting diode sets;
A housing for housing the light emitting diode array and the driving unit;
A light-emitting diode illuminating device. A waterproof connector provided through the housing and connected to wiring for supplying alternating current and control signals;
A vent filter provided through the housing to suppress a pressure difference between the inside and the outside of the housing;
The light-emitting diode illuminating device according to claim 7. A rectification unit that converts supplied alternating current into pulsating flow;
A first current path switching unit configured to switch a current path to the plurality of light emitting diode groups by a switching element with respect to the light emitting diode array in which the plurality of light emitting diodes are connected in series and divided into the plurality of light emitting diode groups; ,
A second current path switching unit that switches current paths from the plurality of light emitting diode groups by a switching element;
Corresponding to the voltage of the pulsating current converted by the rectifying unit, the switching elements in the first current path switching unit and the second current path switching unit are controlled, and current paths for the plurality of light emitting diode groups are set. A current path setting unit to be set;
A light emitting diode array driving device comprising:

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