JP2018181999A - Method for manufacturing light-emitting diode chip and light-emitting diode chip - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting diode chip capable of obtaining sufficient luminance and a method for manufacturing the same.SOLUTION: A method for manufacturing a light-emitting diode chip comprises: a wafer rear surface processing step of forming a plurality of recesses or a plurality of grooves corresponding to each LED circuit on a rear surface of a wafer which includes a laminate layer in which a plurality of semiconductor layers containing a light-emitting layer are formed on a transparent substrate and in which an LED circuit 19 is formed in each of the regions partitioned by a plurality of division schedule lines mutually crossing a surface; a transparent substrate processing step of forming a plurality of recesses corresponding to each LED circuit on a surface or a rear surface of a first transparent substrate or a second transparent substrate in which a plurality of through holes are formed across the whole surface; a transparent substrate sticking step of forming an integrated wafer by sticking a surface of the first transparent substrate to a rear surface of the wafer and a surface of the second transparent substrate to a rear surface of the first transparent substrate; and a dividing step of dividing the integrated wafer into individual light-emitting diode chips 31 by cutting the wafer together with the first transparent substrate and the second transparent substrate along the division schedule lines.SELECTED DRAWING: Figure 13

Description

  The present invention relates to a method of manufacturing a light emitting diode chip and a light emitting diode chip.

  A laminate layer in which a plurality of n-type semiconductor layers, light emitting layers, and p-type semiconductor layers are stacked is formed on the surface of a crystal growth substrate such as a sapphire substrate, a GaN substrate, or a SiC substrate. A wafer on which a plurality of light emitting devices such as light emitting diodes (LEDs) are formed in a region partitioned by a planned dividing line is cut along the planned dividing line and divided into individual light emitting device chips, and the divided light emission Device chips are widely used in various electric devices such as mobile phones, personal computers, and lighting devices.

  Since the light emitted from the light emitting layer of the light emitting device chip is isotropic, it is also irradiated to the inside of the crystal growth substrate and the light is emitted also from the back surface and the side surface of the substrate. However, among the light emitted to the inside of the substrate, light having an incident angle at the interface with the air layer of not less than the critical angle is totally reflected at the interface and confined inside the substrate and is not emitted from the substrate to the outside As a result, there is a problem that the luminance of the light emitting device chip is reduced.

  In order to solve this problem, in order to suppress the light emitted from the light emitting layer from being trapped inside the substrate, a light emitting diode in which a transparent member is stuck on the back surface of the substrate to improve the brightness (LED) is described in Unexamined-Japanese-Patent No. 2014-175354.

JP, 2014-175354, A

  However, the light emitting diode disclosed in Patent Document 1 has a problem that although the luminance is slightly improved by sticking the transparent member on the back surface of the substrate, sufficient luminance can not be obtained.

  The present invention has been made in view of these points, and an object of the present invention is to provide a method of manufacturing a light emitting diode chip and a light emitting diode chip capable of obtaining sufficient brightness.

  According to the invention of claim 1, there is provided a method of manufacturing a light emitting diode chip, comprising: a laminate layer in which a plurality of semiconductor layers including a light emitting layer are formed on a transparent substrate for crystal growth; A wafer preparing step of preparing a wafer in which an LED circuit is formed in each area partitioned by a plurality of planned dividing lines crossing each other on the front surface of the wafer, and a plurality of recesses or A wafer back surface processing step of forming a groove, and a plurality of first transparent substrates or second transparent substrates having a plurality of through holes formed over the entire surface corresponding to each LED circuit on at least one of the front and back surfaces. After performing the transparent substrate processing step of forming the hollow of the wafer, the wafer back surface processing step and the transparent substrate processing step, the surface of the first transparent substrate is attached to the back surface of the wafer and Attaching the surface of the second transparent substrate to the back surface of the transparent substrate to form an integrated wafer, and after performing the transparent substrate attaching step, the wafer is subjected to the planned dividing line And c) dividing the integrated wafer into individual light emitting diode chips by cutting together with the first and second transparent substrates. Ru.

  Preferably, in the wafer backside processing step, the recess or groove is formed by any of a cutting blade, etching, sand blast, and laser.

  Preferably, the shape of the depression formed in the transparent substrate processing step is any of triangular, square or circular. Preferably, the depressions formed in the transparent substrate processing step are formed by any of etching, sand blast, and laser.

  Preferably, the first and second transparent substrates are formed of any of transparent ceramics, optical glass, sapphire, and transparent resin, and in the transparent substrate bonding step, the first transparent substrate is a wafer with a transparent adhesive. Bonded, the second transparent substrate is bonded to the first transparent substrate with a transparent adhesive.

  According to the invention of claim 6, the light emitting diode chip is a light emitting diode chip having an LED circuit formed on the surface and a recess or groove formed on the back surface, and a plurality of through holes attached to the back surface of the light emitting diode. And at least one of the first transparent member and the second transparent member, and a second transparent member attached to the back surface of the first transparent member. A light emitting diode chip is provided in which a recess is formed on the front or back surface of

  In the light emitting diode chip of the present invention, a recess or a groove is formed on the back surface of the light emitting diode, and a recess is formed on the surface or the back surface of at least one of the first transparent member or the second transparent member having a plurality of through holes. In addition to the increase in the surface area of the first transparent member or the second transparent member, the light is complicatedly refracted by the at least two layers of the transparent member and the depression to form the first and second transparent members. The light confined inside is reduced, and the amount of light emitted from the first and second transparent members is increased to improve the brightness of the light emitting diode chip.

It is a surface side perspective view of an optical device wafer. FIG. 2 (A) is a perspective view showing a back surface processing step of a wafer by a cutting blade, and FIGS. 2 (B) to 2 (D) are cross-sectional views showing the formed groove shape. FIG. 3A is a perspective view of the back side of the wafer having a plurality of grooves extending in the first direction formed on the back side of the wafer, and FIG. 3B is a first direction formed on the back side of the wafer and It is a back surface side perspective view of the wafer in which the some groove | channel extended in the 2nd direction orthogonal to a 1st direction was formed. 4A is a perspective view showing how a mask is attached to the back surface of the wafer, and FIG. 4B is a perspective view of a state where a mask having a plurality of holes is attached to the back surface of the wafer, FIG. C) to 4 (E) are partial perspective views of the wafer showing the shape of the recess formed on the back surface of the wafer. Fig. 5 (A) is a perspective view showing how a groove is formed on the back surface of the wafer by a laser beam, Fig. 5 (B) is a partial sectional view of the wafer showing the groove shape, and Fig. 5 (C) is a wafer by a laser beam. FIG. 5 (D) is a partial perspective view of the wafer showing the formed circular recess on the back surface. FIG. 6A is a perspective view showing how a mask having a plurality of holes corresponding to each LED circuit of the optical device wafer is attached to the surface of the first transparent substrate having a plurality of through holes formed over the entire surface. 6 (B) is a perspective view of a state in which a mask is attached to the surface of the first transparent substrate, and FIGS. 6 (C) to 6 (E) are depressions formed on the surface of the first transparent substrate. It is a partial perspective view showing shape. FIG. 7A is a perspective view showing how a plurality of depressions corresponding to each LED circuit of the optical device wafer are formed on the surface of the first transparent substrate by laser beam irradiation, and FIG. 7B shows the shape of the depressions. It is a partial perspective view showing. FIG. 8A is a perspective view showing a first integration step of bonding and integrating a first transparent substrate having a plurality of depressions on its surface to the back surface of the wafer, and FIG. 8B is a first integration step. It is a perspective view of a wafer. FIG. 9 (A) is a perspective view showing a second integration step in which the surface of the second transparent substrate is adhered and integrated on the back surface of the first transparent substrate of the first integrated wafer, FIG. 9 (B) Is a perspective view of a second integrated wafer. It is a perspective view which shows the support process which supports a 2nd integrated wafer by an annular frame via a dicing tape. It is a perspective view which shows the division process which divides | segments a 2nd integrated wafer into a light emitting diode chip. It is a perspective view of the 2nd integrated wafer after the end of a division process. 1 is a perspective view of a light emitting diode chip according to an embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, a front side perspective view of an optical device wafer (hereinafter sometimes simply referred to as a wafer) 11 is shown.

  The optical device wafer 11 is configured by laminating an epitaxial layer (laminate layer) 15 such as gallium nitride (GaN) on a sapphire substrate 13. The optical device wafer 11 has a surface 11 a on which the epitaxial layer 15 is stacked and a back surface 11 b on which the sapphire substrate 13 is exposed.

  Here, in the optical device wafer 11 of the present embodiment, the sapphire substrate 13 is adopted as a substrate for crystal growth, but instead of the sapphire substrate 13, a GaN substrate or a SiC substrate may be adopted.

  The stack layer (epitaxial layer) 15 is an n-type semiconductor layer (for example, an n-type GaN layer) in which electrons are majority carriers, a semiconductor layer (for example, InGaN layer) It forms by carrying out epitaxial growth of the semiconductor layer (for example, p-type GaN layer) in order.

  The sapphire substrate 13 has a thickness of, for example, 100 μm, and the laminate layer 15 has a thickness of, for example, 5 μm. A plurality of LED circuits 19 are formed in the laminate layer 15 by being divided by a plurality of planned division lines 17 formed in a lattice shape. The wafer 11 has a surface 11 a on which the LED circuit 19 is formed and a back surface 11 b on which the sapphire substrate 13 is exposed.

  According to the method of manufacturing a light emitting diode chip of the embodiment of the present invention, first, a wafer preparation step of preparing an optical device wafer 11 as shown in FIG. 1 is performed. Further, a wafer back surface processing step of forming a plurality of grooves 3 corresponding to the LED circuits 19 on the back surface 11 b of the wafer 11 is performed.

  This wafer backside processing step is performed, for example, using a well-known cutting apparatus. As shown in FIG. 2A, the cutting unit 10 of the cutting apparatus includes a spindle housing 12, a spindle (not shown) rotatably inserted in the spindle housing 12, and a cutting blade 14 attached to the tip of the spindle. Contains.

  The cutting blade of the cutting blade 14 is formed of, for example, an electroforming grinding stone in which diamond abrasive grains are fixed by nickel plating, and the tip shape thereof is triangular, square, or semicircular.

  The upper half of the cutting blade 14 is covered with a blade cover (wheel cover) 16, and the blade cover 16 has a pair of cooler nozzles (only one is shown) extending horizontally to the back and front sides of the cutting blade 14 18 are provided.

  In the wafer back surface processing step of forming a plurality of grooves 3 on the back surface 11 b of the wafer 11, the front surface 11 a of the wafer 11 is suctioned and held by a chuck table of a cutting device (not shown). Then, while rotating the cutting blade 14 at high speed in the direction of arrow R, the back surface 11b of the wafer 11 is cut to a predetermined depth while processing the wafer 11 held by the chuck table (not shown) in the direction of arrow X1. The groove 3 extending in the direction is formed by cutting.

  The rear surface 11b of the wafer 11 is cut while indexing and feeding the wafer 11 in the direction orthogonal to the direction of the arrow X1 at the pitch of the planned dividing line 17 of the wafer 11, as shown in FIG. Forming a plurality of grooves 3 extending one after the other.

  As shown in FIG. 3A, the plurality of grooves 3 formed on the back surface 11b of the wafer 11 may extend in only one direction, or as shown in FIG. A plurality of grooves 3 extending in a direction 1 and a second direction orthogonal to the first direction may be formed on the back surface 11 b of the wafer 11.

  The groove formed on the back surface 11b of the wafer 11 is a groove 3 having a triangular cross section as shown in FIG. 2B, or a groove 3A having a rectangular cross section as shown in FIG. 2C, or FIG. It may be any of the grooves 3B having a semicircular cross section as shown in FIG.

  Instead of forming a plurality of grooves 3, 3A, 3B on the back surface 11b of the wafer 11 by cutting, a plurality of recesses may be formed on the back surface 11b of the wafer 11 corresponding to the LED circuits 19. In this embodiment, as shown in FIG. 4A, a mask 2 having a plurality of holes 4 corresponding to the LED circuits 19 of the wafer 11 is used.

  As shown in FIG. 4B, the holes 4 of the mask 2 are adhered to the back surface 11 b of the wafer 11 in correspondence with the LED circuits 19 of the wafer 11. Then, as shown in FIG. 4C, triangular concave portions 5 corresponding to the shapes of the holes 4 of the mask 2 are formed on the back surface 11 b of the wafer 11 by wet etching or plasma etching.

  By changing the shape of the hole 4 of the mask 2 into a square shape or a circular shape, a quadrangular recess 5A as shown in FIG. 4D is formed on the back surface 11b of the wafer 11, or FIG. A circular recess 5B may be formed on the back surface 11b of the wafer 11 as shown in FIG.

  As a modification of the present embodiment, after attaching the mask 2 to the back surface 11 b of the wafer 11, sand blasting is performed to form a triangular concave portion as shown in FIG. 4C on the back surface 11 b of the wafer 11. Alternatively, a square recess 5A as shown in FIG. 4 (D) or a circular recess 5B as shown in FIG. 4 (E) may be formed.

  A laser processing apparatus may be used to form a plurality of grooves or a plurality of recesses corresponding to the LED circuits 19 on the back surface 11 b of the wafer 11. In the first embodiment by laser processing, as shown in FIG. 5A, a laser beam of a wavelength (for example, 266 nm) having absorption to the wafer 11 is transferred from a condenser (laser head) 24 to the wafer 11. A chuck table (not shown) holding the wafer 11 is processed and fed in the direction of arrow X1 while irradiating the back surface 11b, thereby forming grooves 7 extending in the first direction on the back surface 11b of the wafer 11 by ablation.

  The rear surface 11b of the wafer 11 is subjected to ablation processing while indexing and feeding the wafer 11 in the direction orthogonal to the direction of the arrow X1 by the pitch of the planned dividing line 17 of the wafer 11 to successively advance a plurality of grooves 7 extending in the first direction. Form with. The cross-sectional shape of the groove 7 may be, for example, a semicircular shape as shown in FIG. 5 (B) or another shape.

  As an alternative embodiment, as shown in FIG. 5C, a pulse laser beam of a wavelength (for example, 266 nm) having absorption from the condenser 24 to the wafer 11 is intermittently applied to the wafer 11. A plurality of recesses 9 corresponding to the LED circuits 19 may be formed on the back surface 11 b. The shape of the recess 9 is usually circular as shown in FIG. 5 (D) corresponding to the spot shape of the laser beam.

  After or before the wafer back surface processing step, the surface or back surface of the first transparent substrate 21 having a plurality of through holes 29 formed over the entire surface to be attached to the back surface 11 b of the wafer 11 or The transparent substrate processing step of forming a plurality of recesses corresponding to the LED circuits 19 on the front surface or the back surface of the second transparent substrate 21A attached to the back surface of the transparent substrate 21 is performed.

  In this transparent substrate processing step, for example, as shown in FIG. 6A, a mask 2 having a plurality of holes 4 corresponding to the LED circuits 19 of the wafer 11 is used. As shown in FIG. 6B, the holes 4 of the mask 2 are made to correspond to the respective LED circuits 19 of the wafer 11, the mask is spread over the entire surface, and the surface 21a of the first transparent substrate 21 is formed with a plurality of through holes 29. Stick to

  Then, as shown in FIG. 6C, triangular depressions (recesses) 35 corresponding to the shapes of the holes 4 of the mask 2 are formed on the surface 21 a of the first transparent substrate 21 by wet etching or plasma etching. .

  By changing the shape of the hole 4 of the mask 2 into a square shape or a circular shape, a square shaped recess 35A as shown in FIG. 6D is formed in the surface 21a of the first transparent substrate 21 or A circular recess 35B may be formed on the surface 21a of the first transparent substrate 21 as shown in FIG. 6 (E).

  The first transparent substrate 21 is formed of any of a transparent resin, an optical glass, sapphire, and a transparent ceramic. In the present embodiment, the first transparent substrate 21 is formed of a transparent resin such as polycarbonate or acrylic which is more durable than optical glass.

  As a modification of this embodiment, after attaching the mask 2 to the surface 21 a of the first transparent substrate 21, sandblasting is performed to form the surface 21 a of the first transparent substrate 21 as shown in FIG. It is also possible to form a triangular depression 35 as shown in FIG. 6 or a square depression 35A as shown in FIG. 6 (D) or a circular depression 35B as shown in FIG. 6 (E).

  A laser processing apparatus may be used to form a plurality of depressions corresponding to the LED circuits 19 on the surface 21 a of the first transparent substrate 21. In the embodiment by laser processing, as shown in FIG. 7A, a laser beam of a wavelength (for example, 266 nm) having absorption to the first transparent substrate 21 is collected from the condenser (laser head) 24. The chuck table (not shown) holding the first transparent substrate 21 is processed and fed in the direction of arrow X1 while intermittently irradiating the surface 21a of the first transparent substrate 21 to the surface 21a of the first transparent substrate 21. A plurality of depressions 39 corresponding to the LED circuits 19 of the wafer 11 are formed by ablation.

  The surface 21a of the first transparent substrate 21 is subjected to ablation processing to index a plurality of recesses 39 while indexing and feeding the first transparent substrate 21 in the direction orthogonal to the direction of the arrow X1 by the pitch of the planned dividing line 17 of the wafer 11. Form one after another. The cross-sectional shape of the depression 39 is usually a circular shape as shown in FIG. 7B corresponding to the spot shape of the laser beam.

  In the transparent substrate processing step described above, the plurality of depressions 35, 35A, 35B, 39 are formed in the surface 21a of the first transparent substrate 21. However, the back surface of the first transparent substrate 21 is changed to this embodiment. A plurality of depressions 35, 35A, 35B, 39 may be formed in 21b.

  Alternatively, without performing any processing on the front surface and the back surface of the first transparent substrate 21, a plurality of recesses 35, 35A corresponding to the respective LED circuits of the wafer 11 on the front surface 21a or the back surface 21b of the second transparent substrate 21A. , 35B, 39 may be formed. Similarly to the first transparent substrate 21, the second transparent substrate 21A is also formed of any of transparent resin, optical glass, sapphire, and transparent ceramics.

  After carrying out the transparent substrate processing step, the front surface 21a of the first transparent substrate 21 is adhered to the back surface 11b of the wafer 11, and the front surface 21a of the second transparent substrate 21A is adhered to the back surface 21b of the first transparent substrate 21. Implement the transparent substrate bonding process to be worn.

  In this transparent substrate bonding step, first, as shown in FIG. 8A, the surface 21a of the first transparent substrate 21 in which a plurality of depressions 39 are formed on the surface 21a corresponding to the LED circuits 19 of the wafer 11. Then, the back surface 11b of the wafer 11 is bonded with a transparent adhesive, and as shown in FIG. 8B, the wafer 11 and the first transparent substrate 21 are integrated to form a first integrated wafer 25.

  Next, as shown in FIG. 9A, the front surface 21a of the second transparent substrate 21A is attached to the back surface 21b of the first transparent substrate 21 of the first integrated wafer 25. Then, as shown in FIG. A second integrated wafer 25A as shown is formed.

  The transparent substrate attaching step is not limited to the above-described order, and the first transparent substrate 21 is attached after the surface 21a of the second transparent substrate 21A is attached to the back surface 21b of the first transparent substrate 21. The front surface 21a of the second integrated wafer 25A may be bonded to the back surface 11b of the wafer 11 to form the second integrated wafer 25A.

  After carrying out the transparent substrate bonding step, as shown in FIG. 10, the second transparent substrate 21A of the second integrated wafer 25A is bonded to a dicing tape T whose outer peripheral portion is bonded to the annular frame F. A frame unit is formed, and a supporting step of supporting the second integrated wafer 25A with the annular frame F via the dicing tape T is performed.

  After carrying out the supporting step, the frame unit is put into a cutting device, and the dividing step of cutting the second integrated wafer 25 with the cutting device and dividing it into individual light emitting diode chips is carried out. This division process will be described with reference to FIG.

  In the dividing step, the second integrated wafer 25A is sucked and held by the chuck table 20 of the cutting apparatus through the dicing tape T of the frame unit, and the annular frame F is clamped and fixed by a clamp (not shown).

  Then, while rotating the cutting blade 14 at high speed in the direction of arrow R, the dividing line 17 of the wafer 11 is cut until the tip of the cutting blade 14 reaches the dicing tape T, and the cooler nozzle 18 is used to cut the cutting blade 14 and the wafer 11 By feeding the second integrated wafer 25A in the direction of arrow X1 while supplying the cutting fluid toward the wafer 11, the first transparent substrate 21 and the second transparent substrate 21 along the planned dividing line 17 of the wafer 11. Cutting groove 27 is formed.

  Similar cutting grooves 27 are formed one after another along the planned dividing line 17 extending in the first direction while indexing and feeding the cutting unit 10 in the Y-axis direction. Next, after rotating the chuck table 20 by 90 °, similar cutting grooves 27 are formed along all the planned dividing lines 17 extending in the second direction orthogonal to the first direction, as shown in FIG. By setting the state, the second integrated wafer 25A is divided into light emitting diode chips 31 as shown in FIG.

  In the embodiment described above, a cutting device is used to divide the second integrated wafer 25A into the individual light emitting diode chips 31, but at a wavelength having transparency to the wafer 11 and the transparent substrates 21 and 21A. A laser beam is applied to the wafer 11 along the dividing lines 13 to form a plurality of modified layers in the thickness direction inside the wafer 11 and the transparent substrates 21 and 21A, and then the second integrated wafer 25A is formed. An external force may be applied to divide the second integrated wafer 25A into the individual light emitting diode chips 31 using the modified layer as the dividing start point.

  The light emitting diode chip 31 shown in FIG. 13 has a first transparent member 21 ′ having a plurality of through holes 29 on the back surface of the LED 13A having the LED circuit 19 on the front surface and the recess 5 on the back surface. . Moreover, the hollow 35, 35A, 35B or the hollow 39 is formed in the surface of 1st transparent member 21 '. Furthermore, a second transparent member 21A 'is attached to the back surface of the first transparent member 21'.

  Therefore, in the light emitting diode chip 31 shown in FIG. 13, since the depression is formed on the surface of the first transparent member 21 ', the surface area of the first transparent member 21' is increased. Furthermore, a part of the light emitted from the LED circuit 19 of the light emitting diode chip 31 and incident on the first transparent member 21 'is refracted by the hollow portion and then enters the first transparent member 21'.

  Therefore, when light is refracted from the first transparent member 21 'and the second transparent member 21A' and emitted, the light is emitted at the interface between the first and second transparent members 21 'and 21A' and the air layer. The proportion of light whose incident angle is equal to or greater than the critical angle decreases, the amount of light emitted from the first and second transparent members 21 ′ and 21A ′ increases, and the brightness of the light emitting diode chip 31 improves.

2 mask 3, 3A, 3B cutting groove 5, 5A, 5B, 9 recess 10 cutting unit 11 optical device wafer (wafer)
13 sapphire substrate 14 cutting blade 15 laminated body layer 17 division intended line 19 LED circuit 21 first transparent substrate 21 'first transparent member 21A second transparent substrate 21A' second transparent member 25 first integrated wafer 25A Second integrated wafer 27 cutting groove 29 through hole 31 light emitting diode chip 35, 35A, 35B, 39 hollow

Claims (6)

A method of manufacturing a light emitting diode chip, comprising
It has a laminate layer in which a plurality of semiconductor layers including a light emitting layer are formed on a transparent substrate for crystal growth, and in each of the regions partitioned by a plurality of planned dividing lines crossing each other on the surface of the laminate layer. A wafer preparation step of preparing a wafer on which an LED circuit is formed;
A wafer back surface processing step of forming a plurality of recesses or grooves corresponding to each LED circuit on the back surface of the wafer;
A transparent substrate processing step of forming a plurality of recesses corresponding to each LED circuit on the front surface or the back surface of at least one of the first transparent substrate and the second transparent substrate having a plurality of through holes formed over the entire surface; ,
After carrying out the wafer back surface processing step and the transparent substrate processing step, the front surface of the first transparent substrate is attached to the back surface of the wafer and the front surface of the second transparent substrate is on the back surface of the first transparent substrate. A transparent substrate pasting step of pasting together to form an integrated wafer;
A dividing step of dividing the integrated wafer into individual light emitting diode chips by cutting the wafer along with the dividing lines with the first and second transparent substrates after performing the transparent substrate bonding step; ,
A method of manufacturing a light emitting diode chip, comprising:   The method for manufacturing a light emitting diode chip according to claim 1, wherein the recess or the groove is formed by any one of a cutting blade, etching, sand blast, and laser in the wafer back surface processing step.   The method for manufacturing a light emitting diode chip according to claim 1, wherein a shape of the recess formed in the transparent substrate processing step is any one of a triangular shape, a square shape and a circular shape.   The method for manufacturing a light emitting diode chip according to claim 1, wherein the recess is formed by any of etching, sand blast, and laser in the transparent substrate processing step.   The first and second transparent substrates are formed of any of transparent ceramics, optical glass, sapphire, and transparent resin, and in the transparent substrate bonding step, the first transparent substrate is formed of a transparent adhesive. The method for manufacturing a light emitting diode chip according to claim 1, wherein the second transparent substrate is attached to the back surface of the wafer, and the second transparent substrate is attached to the back surface of the first transparent substrate using a transparent adhesive. A light emitting diode chip,
A light emitting diode in which an LED circuit is formed on the front surface and a recess or a groove is formed on the back surface;
A first transparent member having a plurality of through holes attached to the back surface of the light emitting diode;
A second transparent member attached to the back surface of the first transparent member;
Equipped with
A light emitting diode chip in which a recess is formed on the surface or the back surface of at least one of the first transparent member and the second transparent member.