JP2018174262A - Method of manufacturing electrode of photoelectric conversion element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing an electrode of a photoelectric conversion element, the method allowing for suppression of the occurrence of burnout during firing of a laminate having at least two types of layers having different firing easiness with light irradiation.SOLUTION: The method of manufacturing an electrode of a photoelectric conversion element according to the present invention includes a firing step when a laminate having, at different positions on at least one surface thereof, a first layer containing a conductive material in an amount of 50 mass% or more and a second layer having a content ratio of a conductive material of less than 50 mass% is irradiated with light to fire the first layer and the second layer, the firing step disposing a light attenuating mask right above or above the first layer and irradiating the laminate with light.SELECTED DRAWING: None

Description

  The present invention relates to an electrode manufacturing method for a photoelectric conversion element.

  In recent years, solar cells have attracted attention as photoelectric conversion elements that convert light energy into electric power. A solar cell is formed by sandwiching a layer contributing to the movement of electrons and holes between a photoelectrode and a counter electrode formed on a substrate. For example, in a dye-sensitized solar cell which is one of solar cells, a photoelectrode comprising a semiconductor layer having a sensitizing dye adsorbed on a photoelectrode substrate, an electrolyte layer, and a counter electrode group On the material, a counter electrode having a catalyst layer is arranged in this order. Furthermore, the photoelectrode can include a conductive film between the photoelectrode substrate and the semiconductor layer.

  In the production of an electrode, a composition for forming a wiring comprising a conductive metal and a composition for forming a semiconductor layer or a catalyst layer on a substrate that may optionally have a conductive film and the like. There is a case where an application is performed to form a coating film and to irradiate the coating film with light, for example, to apply energy to perform baking. Here, characteristics differ between the composition for forming the semiconductor layer and the catalyst layer and other components such as the base material, the conductive film, and the wiring. For this reason, when light irradiation is performed under conditions sufficient for firing the coating film, burnout may occur in other components.

  Conventionally, there has been proposed a method for producing a semiconductor layer capable of performing a process of firing a semiconductor layer formed on a support including a resin film substrate by applying high energy to such a degree that the resin film substrate is deformed ( For example, see Patent Document 1). In the method described in Patent Document 1, when the semiconductor layer formed on the substrate is heated by electromagnetic wave irradiation, the substrate that may be a resin film or the like is deformed by performing a step of cooling the substrate. Thus, the semiconductor layer can be fired while effectively suppressing burning.

JP 2012-160394 A

  Here, by cooling the support side as described in Patent Document 1, there is a possibility that burnout that may occur in other members other than the firing target, such as wiring, cannot be sufficiently suppressed.

  Therefore, the present invention provides a method for producing an electrode for a photoelectric conversion element capable of suppressing the occurrence of burnout during firing by light irradiation of a laminate having at least two types of layers having different firing easiness. The purpose is to provide.

  The inventor has intensively studied to achieve the above object. And this inventor completed this invention paying attention that the content rate of an electroconductive metal influences baking ease.

An object of the present invention is to advantageously solve the above-described problems, and the method for producing an electrode of a photoelectric conversion element of the present invention comprises at least 50% by mass of a conductive material at different positions on at least one surface. In firing the first layer and the second layer by irradiating light to a laminate having the first layer containing and the second layer having a conductive material content of less than 50% by mass, It includes a firing step in which a light reduction mask is disposed immediately above or above the first layer, and the laminate is irradiated with light.
Lamination having at least two types of layers with different firing easiness if a dimming mask is placed directly above or above the first layer in the firing step and light is irradiated to the laminate through the mask. It is possible to suppress the occurrence of burnout when the body is fired.

  Moreover, in the electrode manufacturing method of the photoelectric conversion element according to the present invention, the firing step includes irradiating the laminate with light through a light-transmitting support having the light reduction mask. Is preferred. In the firing step, the second layer can be effectively fired by irradiating light through a light-transmitting support having a light-reducing mask.

Moreover, in the electrode manufacturing method of the photoelectric conversion element which concerns on this invention, it is preferable that the light transmittance in wavelength 1 micrometer of the said support body which has the said light reduction mask is 65% or less. If the light transmittance at a wavelength of 1 μm of the light-reducing mask is 65% or less, it is possible to more effectively suppress the occurrence of burnout in the first layer.
In addition, light transmittance can be measured by the method as described in the Example of this specification.

  Moreover, in the electrode manufacturing method of the photoelectric conversion element according to the present invention, it is preferable that a shortest distance between the contour of the light reducing mask and the contour of the first layer on the light receiving surface is 100 μm or more. If the shortest distance between the contour of the light-reducing mask and the contour of the first layer on the light receiving surface is 100 μm or more, it is possible to more effectively suppress the occurrence of burnout in the first layer.

  Moreover, in the electrode manufacturing method of the photoelectric conversion element which concerns on this invention, it is preferable that the irradiation light in the said baking process has at least 1 radiation energy maximum in the wavelength range of 0.2 micrometer or more and 2.7 micrometers or less. In the firing step, firing of the laminate can be promoted by irradiating the laminate with the irradiation light.

  According to the present invention, there is provided an electrode manufacturing method for a photoelectric conversion element capable of suppressing the occurrence of burnout during firing by light irradiation of a laminate having at least two types of layers having different firing easiness. Is possible.

  Hereinafter, embodiments of the present invention will be described in detail. In addition, the electrode manufacturing method of the photoelectric conversion element of the present invention is suitably implemented in all cases where firing of a laminate having at least two types of layers having different firing easiness, at least one of which is a firing target, may be required. be able to. In particular, the method for producing an electrode of a photoelectric conversion element of the present invention can be suitably used when forming electrodes of solar cells such as dye-sensitized solar cells, organic thin film solar cells, and perovskite solar cells.

  First, a schematic configuration of a dye-sensitized solar cell as an example of a photoelectric conversion element including an electrode that can be produced according to the method for manufacturing an electrode of a photoelectric conversion element of the present invention will be described. The dye-sensitized solar cell is not particularly limited, and a photoelectrode substrate including a photoelectrode including a porous semiconductor layer, and a counterelectrode substrate including a counterelectrode including a catalyst layer include an electrolyte layer. And a dye-sensitized solar cell having a general structure in which the porous semiconductor layer side and the catalyst layer side are arranged to face each other. Furthermore, the dye-sensitized solar cell may include a conductive film between the base material and the porous semiconductor layer, and between the catalyst layer and the counter electrode base material. The photoelectrode includes a porous semiconductor layer and a photoelectrode-side conductive film. The counter electrode includes a catalyst layer and a counter electrode side conductive film. Furthermore, the photoelectrode side conductive film and the counter electrode side conductive film are connected by wiring, and when the dye adsorbed in the porous semiconductor layer is excited by light and emits electrons, the photoelectrode side conductive film and the counter electrode side conductive film are connected through the wiring from the photoelectrode side. Electron flow that reaches the back electrode and returns to the photoelectrode through the electrolyte layer is generated. In this way, the dye-sensitized solar cell converts light energy into electrical energy.

  The photoelectrode substrate can be a conductive sheet formed using a metal, a metal oxide, a carbon material, a conductive polymer, or the like, or a nonconductive sheet made of resin, glass, and silicon. Among these, a transparent resin is often used as the base material. Transparent resins include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), syndiotactic polystyrene (SPS), polyphenylene sulfide (PPS), polycarbonate (PC), polyarylate (PAr), polysulfone (PSF), polyester sulfone. Examples thereof include synthetic resins such as (PES), polyetherimide (PEI), transparent polyimide (PI), and cycloolefin polymer (COP).

  The porous semiconductor layer is a porous semiconductor layer. In the porous semiconductor layer, the content ratio of the conductive material that can be included in the wiring described later is less than 50% by mass. The porous material for forming the porous semiconductor layer is not particularly limited, for example, various metal oxide semiconductors such as titanium oxide, zirconium oxide, zinc oxide, vanadium oxide, niobium oxide, tantalum oxide, tungsten oxide, Various metal oxide semiconductors such as strontium titanate, calcium titanate, magnesium titanate, barium titanate and potassium niobate, transition metal oxides such as magnesium oxide, strontium oxide, aluminum oxide, cobalt oxide, nickel oxide and manganese oxide And lanthanoid oxides such as cerium oxide, gadolinium oxide, samarium oxide and ytterbium oxide, and natural or synthetic silicate compounds represented by silica. These materials may be used alone or in combination. Furthermore, although the thickness of a porous semiconductor layer is not specifically limited, Usually, it is 0.1-250 micrometers.

  The dye adsorbed on the porous semiconductor layer is a compound (sensitizing dye) that can be excited by light and pass electrons to the porous semiconductor layer. Such a sensitizing dye is not particularly limited, and may be a dye that can be used in a dye-sensitized solar cell, such as a metal complex dye.

  The electrolyte layer is a layer for separating the photoelectrode and the counter electrode and efficiently performing charge transfer. The electrolyte layer usually contains a supporting electrolyte, a redox couple (a pair of chemical species that can be reversibly converted into an oxidized form and a reduced form in a redox reaction), a solvent, and the like.

  The catalyst layer is formed of, for example, a platinum layer or a carbon layer. In particular, the carbon layer can include fibrous carbon nanostructures. Here, the fibrous carbon nanostructure is not particularly limited, and may be, for example, a carbon nanotube (CNT), a vapor growth carbon fiber, or the like. These may be blended singly or in combination of two or more. Especially, it is preferable that a fibrous carbon nanostructure is a fibrous carbon nanostructure containing CNT. Further, nanosized platinum or the like may be supported on the fibrous carbon nanostructure according to a conventional method. This is because the catalytic effect can be improved.

  The counter electrode base material is for supporting the counter electrode, and is formed of the same material as the base material, for example. Note that the counter electrode base material may be formed of a non-translucent material.

  Examples of the photoelectrode-side conductive film and the counter electrode-side conductive film include metals, metal oxides, composite metal oxides, carbon materials, and combinations of two or more thereof. The conductive film can be connected to the wiring. Further, the thicknesses of the photoelectrode-side conductive film and the counter electrode-side conductive film are not particularly limited, but are usually 0.1 to 250 μm.

Examples of the wiring include a wiring containing 50% by mass or more of a conductive material having an electrical resistivity ρ of 2.0 × 10 ⁻⁵ Ωm or less. The electrical resistivity ρ of such a conductive material is 2. X10 ⁻⁷ Ωm or less is preferable, and 5.0 × 10 ⁻⁸ Ωm or less is more preferable. Examples of the conductive material include highly conductive metals such as copper, silver, gold, and aluminum. Furthermore, the thickness of the wiring that can be provided in the electrode is not particularly limited, but is usually 0.1 to 250 μm.

(Electrode manufacturing method)
The electrode manufacturing method of the present invention that can be used in manufacturing the photoelectrode and the counter electrode of the dye-sensitized solar cell that can have the above-described schematic configuration will be described in detail below. In addition, in the following description, the case where the electrode manufacturing method of this invention is applied at the time of manufacture of the photoelectrode of the said dye-sensitized solar cell is demonstrated as an example.
The electrode manufacturing method of the present invention includes a first layer containing 50% by mass or more of a conductive material at a different position on at least one surface, and a second layer having a content ratio of the conductive material of less than 50% by mass. When firing the first layer and the second layer by irradiating light to the laminate having the above, a firing step of irradiating the laminate with a light reduction mask disposed immediately above or above the first layer including. Therefore, it is possible to satisfactorily suppress the occurrence of burnout during firing of a laminate having at least two types of layers having different firing easiness. The reason why such an effect is obtained by the electrode manufacturing method of the present invention is not clear, but is presumed to be as follows.

  That is, each layer that can be included in the laminate has a different component composition depending on the function that it performs. Among these, a conductive material having a small electrical resistivity ρ, which is a main component of the wiring that is the first layer, is easily heated by receiving energy during firing. When exposed to the same energy as the other layers to be fired, the wiring with a high content of the conductive material may be burned out. Here, in the present invention, a dimming mask is disposed directly above or above the wiring (first layer). For this reason, the energy amount which reaches | attains wiring can be decreased compared with another layer. By carrying out the firing step under such energy conditions, from the viewpoint of ease of firing, the first layer can be fired under substantially the same conditions as the second layer, and the first layer will burn out. It is presumed that the firing of the second layer can be promoted while satisfactorily being suppressed. Furthermore, since the first layer and the second layer can be fired under substantially equivalent conditions from the viewpoint of ease of firing, the amount of energy reaching both layers can be optimized to further efficiently fire the second layer. Proceed to complete firing in a short time.

  The electrode manufacturing method of the present invention includes an optional preparation step and a firing step. Hereinafter, each step will be described.

<Preparation process>
In the preparatory step, on the photoelectrode substrate as described above, the photoconductive film on the photoelectrode side, the wiring as the first layer, and the second layer, firing for the porous semiconductor layer that can become a porous semiconductor layer by firing A precursor film is formed. The photoelectrode-side conductive film is not particularly limited and is formed by a known method such as a sputtering method, a PVD method, a CVD method, a coating method, or a spray method using the metal oxide or carbon material as described above. be able to.

  On the photoelectrode-side conductive film formed in this way, the wiring as the first layer can be formed by using a known forming method such as sputtering, ink jetting, bar coating, or screen printing. Furthermore, on the photoelectrode-side conductive film, using the composition containing the porous material described above, a coating film is formed according to a known coating film forming method such as coating or printing, and the porous layer is the second layer. A firing precursor film for a semiconductor layer can be formed.

  Regardless of this example, the first layer and the second layer are exposed on the surface at different positions on at least one surface of the laminate. In this example, a first layer (wiring) and a second layer (firing precursor film for porous semiconductor layer) are laminated on different portions on one surface of the photoelectrode substrate, and the first layer is laminated. In the portion on the surface, the first layer forms the outermost surface of the laminate, and in the portion on the surface where the second layer is laminated, the second layer forms the outermost surface of the laminate. In the portion on the surface where neither the first layer nor the second layer is laminated, the photoelectrode substrate having the photoelectrode-side conductive film forms the outermost surface of the laminate.

<Baking process>
In the firing step, a darkening mask is disposed immediately above or above the wiring that is the first layer, and the laminate is irradiated with light. The dimming mask may be disposed immediately above the first layer, that is, adjacent to the light receiving surface of the first layer, or above the first layer, that is, away from the light receiving surface of the first layer. It may be arranged. Thus, if a baking process is implemented in the state which has arrange | positioned the light reduction mask, it can suppress effectively that a burnout generate | occur | produces in a 1st layer.

  The light transmittance at a wavelength of 1 μm of the darkening mask is preferably 65% or less, more preferably 55% or less, and further preferably 40% or less. If the light transmittance at a wavelength of 1 μm of the neutral density mask is not more than the above upper limit value, the burnout of the first layer can be further suppressed. The material of the light reduction mask is not particularly limited as long as it is a material that can reduce the light incident from the incident surface and emit the light from the exit surface that is the surface opposite to the incident surface. Infrared absorption type / reflection type) ND (Neutral Density) filter, commercially available filter, light absorbing material such as chromium and its alloys; light attenuating material containing transition metal ions such as Co; and Examples thereof include a light reflective material such as a metal film made of a kind of metal selected from aluminum and gold, and a multilayer reflective film having a plurality of films made of these metals. These materials can be used individually by 1 type or in combination of multiple types.

  The dimming mask can be in any state such as a sheet or paste. When using a sheet-like dark mask, cut the sheet-like dark mask into a shape corresponding to the shape of the light-receiving surface of the first layer and place it directly on the first layer, or Then, after being attached to the corresponding position on the support, light irradiation in the firing step can be carried out. The “light receiving surface” means a surface on which the laminate receives light in the baking process. When using a paste-like darkening mask, the paste-like darkening mask can be applied to the first layer prior to light irradiation in the firing step, and then removed by wiping after the firing step. it can. Alternatively, a paste-like dark mask can be applied to the support to form the dark mask at a position on the support corresponding to the first layer. By arranging the mask on the support, the ease of controlling the irradiation conditions and the versatility of the control method can be improved. In addition, the mask may be arrange | positioned at the light source side surface of a support body, and may be arrange | positioned at the surface on the opposite side (namely, laminated body side) from a light source. Especially, it is preferable that a light reduction mask is arrange | positioned on a light-transmitting support body. By disposing the mask on the light-transmitting support, it is possible to more effectively suppress the occurrence of burnout in the first layer. Here, “light transmittance” means that the light transmittance at a wavelength of 1 μm is 70% or more. The light transmittance can be measured by the method described in the examples.

The support is not particularly limited, and examples thereof include glass such as quartz glass and synthetic quartz glass; and resin films. For example, the glass that can be used as the support is preferably composed mainly of SiO _2, that is, the content of SiO ₂ is preferably 50% by mass or more, and substantially contains no impurities (ie, the content of SiO ₂ Is more preferably 99.99% by mass or more).

  The size of the dimming mask is preferably set so that the shortest distance between the contour of the dimming mask and the contour of the first layer on the light receiving surface is 100 μm or more and 150 μm or less. If the shortest distance between the contour of the light-reducing mask and the contour of the first layer on the light receiving surface is 100 μm or more, the occurrence of burnout in the first layer can be more effectively suppressed. In addition, if the shortest distance between the contour of the light reduction mask and the contour of the first layer on the light receiving surface is 150 μm or less, firing of the second layer can be promoted.

  Here, the irradiation light in the firing step preferably has at least one radiant energy maximum in a wavelength range of 0.2 μm or more and 2.7 μm or less. By using light having at least one radiant energy maximum in such a specific wavelength range, firing of the laminate can be promoted. Here, such irradiation light can be realized by 1) adjusting the radiant energy distribution itself of the light source, or 2) dimming the light emitted from the light source with a filter or the like. Among these, from the viewpoint of simplicity, the method 1) is preferable.

  The light source that is an energy source that can be used in the firing step is not particularly limited, and a general light source such as a heating light source that can be used when manufacturing an electrode of a photoelectric conversion element can be used. . Among these, an infrared heater is mentioned as a light source corresponding to 1).

  Furthermore, the light irradiation time in a baking process can set suitably the time required and sufficient for baking of a laminated body. The light irradiation time can be, for example, 1 second or more and 100 seconds or less. Moreover, the atmosphere at the time of implementing a baking process is not specifically limited, For example, it may be a normal temperature atmospheric pressure air atmosphere according to JISZ8703.

  The fired laminate obtained through such a firing step can be used as a photoelectrode of the dye-sensitized solar cell as described above by adsorbing the dye to the porous semiconductor layer according to a known method. And the dye-sensitized solar cell can be manufactured by combining the obtained photoelectrode with the counter electrode or the electrolyte layer as described above according to a known method.

  EXAMPLES Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to these Examples. In Examples and Comparative Examples, the light transmittance of the light reduction mask was measured as follows. In the examples and comparative examples, the presence or absence of burnout in the obtained first layer was evaluated as follows.

<Light transmittance of dimming mask>
The test piece was obtained by applying the light-reducing mask used in Examples and Comparative Examples to the entire surface of one of the supports used in Examples and Comparative Examples. The thickness of the light reduction mask was set to the same thickness as the examples and comparative examples. The obtained specimen is irradiated with light having a wavelength range of 0.2 μm or more and 2.7 μm or less using a light source (manufactured by JASCO Corporation, “UV-Vis / NIR Spectrophotometer”) The light transmitted through was measured with a photometer (manufactured by JASCO Corporation, "UV-Vis-NIR Spectrophotometer"). The light emitted from the light source without passing through the filter was similarly measured with a photometer. And the value of the transmittance | permeability in wavelength 1.0micrometer was computed from these measurement data. The results are shown in Table 1.

<Presence of burnout in the first layer>
The 1st layer obtained through the baking process according to an Example and a comparative example was observed visually, and it evaluated according to the following references | standards.
A: Burnout is not recognized at all.
B: Burnout is recognized around the first layer.
C: Burnout is observed in less than 20% of the entire light receiving surface area of the first layer.
D: Burnout is observed in 20% or more of the entire light receiving surface area of the first layer.

Example 1
<Preparation process>
On one surface of a polyethylene naphthalate film as a photoelectrode substrate, indium-tin oxide (ITO) was sputtered to form a photoelectrode-side conductive film. For forming a wiring as a first layer on the ITO surface of the obtained photoelectrode substrate with a conductive film (ITO-PEN film, film thickness: 200 μm, ITO thickness: 200 nm, sheet resistance 15 Ω / sq.) The conductive paste was applied on the photoelectrode-side conductive film with a thickness of 10 μm by a Baker type applicator. Next, a binder-free titanium oxide paste ("PECC-C01-06" manufactured by Pexel Technologies, Inc.) containing titanium oxide as a porous material for forming a firing precursor film for the porous semiconductor layer as the second layer. ) Was separated from the wiring as the first layer by 200 μm, and the coating thickness was 150 μm using a Baker type applicator to form a coating film. The coating film was formed in a shape and size so as to cover a part of the surface of the photoelectrode-side conductive film.
Laminates having a titanium oxide paste coating (second layer) and a conductive paste coating (first layer) at different positions on the light-receiving surface were dried at room temperature for 10 minutes.
Thereafter, a glass support (quartz) in which a light-reducing mask made of a near-infrared absorption type ND filter (OD value: 0.4) is disposed at a position corresponding to the first layer above the light-receiving side surface of the laminate. A glass product having a SiO ₂ content of 99.99% or more and a light transmittance of 70% or more at 1 μm was disposed. The size of the light reduction mask was such that the shortest distance between the contour of the light reduction mask and the contour of the coating film (first layer) of the conductive paste on the light receiving surface was 100 μm. In accordance with the above, the light transmittance at a wavelength of 1.0 μm of the support having a dimming mask was measured. The results are shown in Table 1.
<Baking process>
Using a light source (manufactured by JASCO Corporation, “UV-visible-near infrared spectrophotometer”), light having a wavelength range of 0.2 μm to 2.7 μm was irradiated (irradiation conditions: color temperature 2500 K, peak wavelength 1.2 μm, (Irradiation time 10 seconds). About the obtained baked laminated body, the presence or absence of burnout was determined according to the above. The results are shown in Table 1.

(Example 2)
The size of the darkening mask was adjusted so that the shortest distance between the contour of the darkening mask and the contour of the coating film (first layer) of the conductive paste on the light receiving surface was 0 μm. That is, the dimming mask and the first layer have the same shape and size. Except for this point, the firing process was performed in the same manner as in Example 1 to obtain a fired laminate. Furthermore, the same evaluation as in Example 1 was performed. The results are shown in Table 1.

(Example 3)
The material of the light reduction mask was changed to a near-infrared absorption ND filter (OD value: 0.3) different from those in Examples 1 and 2. Except for this point, the firing process was performed in the same manner as in Example 2 to obtain a fired laminate. Furthermore, the same evaluation as in Example 1 was performed. The results are shown in Table 1.

Example 4
The material of the darkening mask was changed to a reflective ND filter (OD value: 0.4). Except for this point, the firing process was performed in the same manner as in Example 1 to obtain a fired laminate. Furthermore, the same evaluation as in Example 1 was performed. The results are shown in Table 1.

(Example 5)
The size of the darkening mask was adjusted so that the shortest distance between the contour of the darkening mask and the contour of the coating film (first layer) of the conductive paste on the light receiving surface was 0 μm. That is, the dimming mask and the first layer have the same shape and size. Except for this point, the firing process was performed in the same manner as in Example 4 to obtain a fired laminate. Furthermore, the same evaluation as in Example 4 was performed. The results are shown in Table 1.

(Example 6)
The material of the light reduction mask was changed to a reflective ND filter (OD value: 0.2) different from those in Examples 4 and 5. Except for this point, the firing process was performed in the same manner as in Example 5 to obtain a fired laminate. Furthermore, the same evaluation as in Example 1 was performed. The results are shown in Table 1.

(Comparative Example 1)
A glass support having no dimming mask was placed above the light-receiving side surface of the laminate, and a firing step was performed in the same manner as in Example 1 to obtain a fired laminate. Furthermore, the same evaluation as in Example 1 was performed. The results are shown in Table 1.

(Comparative Example 2)
Neither the light-reducing mask nor the glass support was placed above the light-receiving side surface of the laminate, and the firing step was performed in the same manner as in Example 1 to obtain a fired laminate. Furthermore, the same evaluation as in Example 1 was performed. The results are shown in Table 1.

  In Table 1, “PEN” represents polyethylene naphthalate, and “ITO” represents indium-tin oxide.

  From Table 1, the wiring (first layer) in which the content ratio of the highly conductive metal Ag, which is a conductive material, is more than 50%, and the layer (second layer) made of titanium oxide that does not contain the highly conductive metal. In firing the laminated body provided, in Examples 1 to 6 in which the light reduction mask was disposed and fired immediately above or above the first layer, the occurrence of burnout in the fired laminated body obtained was suppressed. I understand that.

  According to the present invention, the present invention provides a method for producing an electrode for a photoelectric conversion element capable of suppressing the occurrence of burning damage when firing a laminate having at least two types of layers having different firing easiness by light irradiation. Can be provided.

Claims (5)

Light is applied to a laminate having a first layer containing 50% by mass or more of a conductive material and a second layer having a conductive material content of less than 50% by mass at different positions on at least one surface. In firing and firing the first layer and the second layer,
Including a firing step in which a light-reducing mask is disposed immediately above or above the first layer and the laminate is irradiated with light.
A method for manufacturing an electrode of a photoelectric conversion element.   The method for producing an electrode of a photoelectric conversion element according to claim 1, wherein, in the firing step, the laminated body is irradiated with light through a light-transmitting support having the dimming mask.   The method for producing an electrode of a photoelectric conversion element according to claim 1 or 2, wherein the support having the light reduction mask has a light transmittance of 65% or less at a wavelength of 1 µm.   The method for manufacturing an electrode of a photoelectric conversion element according to any one of claims 1 to 3, wherein a shortest distance between the contour of the light reduction mask and the contour of the first layer on the light receiving surface is 100 µm or more.   The method for producing an electrode for a photoelectric conversion element according to claim 1, wherein the irradiation light in the firing step has at least one radiant energy maximum in a wavelength range of 0.2 μm or more and 2.7 μm or less.