JP2018160566A - Underfill insulation film for gang bonding process - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an underfill insulation film suitable for a gang bonding process, capable of solving problems such as conduction failure and generation of voids in a gang bonding process.SOLUTION: An underfill insulation film for a gang bonding process has a melt viscosity ηat 120°C of 2×10-2×10Pa s and a melt viscosity ηat 140°C of 3×10-3×10Pa s when temperatures are raised from 60°C at 10°C/min in measurement using a dynamic viscoelasticity measuring device.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an underfill insulating film (NCF) used to fill a semiconductor chip in a flip-chip mounting process, chip / chip or chip / circuit board, and more specifically, The present invention relates to an underfill insulating film having characteristics suitable for a gang bonding process, which is an effective technique for improving productivity (reducing tact time) in a simple mounting process, and its use.

In the mounting of semiconductor chips such as flip chip (FC) mounting, after connecting the semiconductor chip and the circuit board, filling the space between the semiconductor chip and the circuit board with a liquid underfill material has been widely used. (For example, refer to Patent Document 1). Specifically, for example, in a flip chip BGA, a chip with solder bumps is FC-connected to a package substrate, and a liquid underfill is injected and cured.
However, in recent years, in order to increase the signal amount between semiconductor chips, the number of bumps tends to increase, and the chip area is limited, so that the pitch of bumps is becoming narrower. For example, in the advanced field of processors and memories, chips with ultra-multiple bumps are mounted on the silicon interposer in close proximity, or memory chips with many bumps formed on both sides with silicon through electrodes (TSV) are stacked. It has been put to practical use and is expected to spread due to cost reduction.
In addition, the bump height was large in consideration of the relaxation of thermal stress between the chip and the substrate and underfill filling, but in the case of a silicon interposer that supports high-density bumps or a case of stacking silicon chips Since the same silicon material is used, it is not necessary to consider thermal stress, and the narrowing of the gap is also progressing due to the trend of thermal conduction (heat radiation) and low profile of IC packages.
In the filling method using a liquid underfill material, it has become difficult to fill all the air bubbles between the narrow pitch and narrow gap chips. Underfill is required to have functions such as ensuring insulation between bumps and supporting stress generated in the bumps. However, if the filling property is poor, the reliability is lowered in that respect.
In addition, when FC connecting a large chip to a resin substrate, bump connection near the outer periphery may be broken due to thermal stress during reflow or the like, and the yield may be reduced. There has been a demand for a paste or film-like pre-fill material that forms an underfill that supports bumps simultaneously with FC connection.
On the other hand, a flip-chip connection method via an anisotropic conductive film (ACF) has also been put into practical use in the field of liquid crystal driver ICs. However, since this method adds conductive particles to the film, there is a concern of inducing a short circuit between the bumps in the trend of narrowing the pitch of the bumps. In addition, it has been developed to be mounted on a display having no heat resistance, and cannot withstand the reflow temperature, so that it is difficult to apply it to a general-purpose IC package. Due to reliability and cost, it is difficult to adapt to the connection and process by the mainstream solder bumps in recent years. Further, since the light transmittance is poor due to the addition of the conductive particles, the alignment mark cannot be visually recognized when the ACF is applied to the bump surface of the chip, so that the chip and the substrate cannot be aligned. Therefore, there is also a problem that a bonding film cannot be used as a chip with a bonding material by bonding a bonding film on the bump surface at the wafer level and dividing it into individual pieces.
Also, the paste underfill material (NCP) is placed between the chip and the substrate before bonding, and it is difficult to control the protrusion of the resin, and when stacking chips or placing chips close to each other In addition, it becomes difficult to apply.

As described above, NCF is considered to be a promising bonding material in narrow pitch, narrow gap bump chip FC mounting, large chip FC mounting on a resin substrate, and IC packages in which the chip is close to FC mounting. . Specifically, a resin film is used as an underfill insulating film, and is placed between the semiconductor chip and the substrate, and then the resin flows when the semiconductor chip and the substrate are FC-bonded by heating / loading. A technique for filling a space between a semiconductor chip and a substrate has been proposed.
However, in the normal NCF method, it is necessary to raise and cool the head of the flip chip bonder for each chip. Therefore, there is a problem in productivity (tact time), and it has not been fully spread. In recent years, the use of so-called gang bonding, in which NCF bonding is performed in two stages, temporary bonding and main bonding, and a plurality of chips are bonded together, reduces the need for head heating, cooling, and the number of times. Attempts have been made to improve productivity.
In gang bonding, the tip-side electrode and the substrate-side electrode are aligned and temporarily pressed in a temporary press-bonding step, and the solder is melted and solder-bonded between the electrodes in the main press-bonding step. For example, in Patent Document 2, a step 1 of supplying a semiconductor bonding adhesive film to a surface having a solder electrode of a semiconductor chip with a solder electrode, and the semiconductor chip with a solder electrode through the semiconductor bonding adhesive film, Step 2 (corresponding to the above-mentioned provisional pressure bonding) that is temporarily bonded onto a semiconductor chip or circuit board having a counter electrode or an electrode pad at a temperature lower than the solder melting temperature, and a bonding head heated to a temperature higher than the solder melting temperature are brought into contact with each other. An adhesive film for semiconductor bonding used in a method for manufacturing a semiconductor device having step 3 (corresponding to the above-described main compression bonding) by soldering, comprising at least a thermosetting resin, a thermosetting agent, and a high molecular weight compound The melt viscosity at a temperature that has a specific minimum melt viscosity in a specific temperature range and is 10 ° C. higher than the minimum melt viscosity attainment temperature. The adhesive film for a semiconductor junction and the melt viscosity has a particular relationship has been described.
However, when a conventional adhesive film for semiconductor bonding is used, voids or poor conduction may occur in temporary pressure bonding, and the solution has been desired.

JP-A-10-158366 JP, 2014-201418, A

  In view of the above-mentioned background art, the problem to be solved by the present invention is an underfill insulating film suitable for a gang bonding process, which can solve problems such as poor conduction and generation of voids in a so-called gang bonding process using NCF. This greatly improves productivity and cost in the semiconductor chip mounting process.

As a result of intensive studies to solve the above-mentioned problems, the present inventors have focused on a specific temperature increase rate and a melt viscosity η ^* of the film at a specific temperature, and more specifically, from 60 ° C. to 10 ° C. / The above problem is effectively solved when the melt viscosity η ^* ₁ at 120 ° C. and the melt viscosity η ^* ₂ at 140 ° C. are respectively in specific ranges when the temperature is raised in minutes. The headline and the present invention were completed.
That is, the present invention and each embodiment thereof are as described in the following [1] to [14].

[1]
In the measurement using the dynamic viscoelasticity measuring apparatus, the melt viscosity η ^* ₁ at 120 ° C. when the temperature is increased from 60 ° C. to 10 ° C./min is 2 × 10 ² to 2 × 10 ⁴ Pa · s. An underfill insulating film for a gang bonding process, having a melt viscosity η ^* ₂ at 140 ° C. of 3 × 10 ^{2 to} 3 × 10 ⁵ Pa · s.
[2]
In the measurement using the dynamic viscoelasticity measuring apparatus, the minimum melt viscosity η ^* ₃ when the temperature is raised from 60 ° C. to 160 ° C. at 10 ° C./min is 2 × 10 ^{2 to} 5 × 10 ³ Pa · s. The underfill insulating film for a gang bonding process according to [1], wherein the minimum melt viscosity is 100 ° C to 140 ° C.
[3]
In the measurement using the dynamic viscoelasticity measuring device, the temperature was raised from 60 ° C. to 160 ° C. at 10 ° C./min, once cooled to 60 ° C., and then heated again at 10 ° C./min. The underfill insulating film for a gang bonding process according to [1] or [2], wherein the melt viscosity η ^* ₄ at 1 ° C. is 1 × 10 ⁴ to 1 × 10 ⁸ Pa · s.
[4]
The underfill insulating film for a gang bonding process according to any one of [1] to [3], wherein the content of conductive particles is 5% by mass or less.
[5]
The underfill insulating film for a gang bonding process according to any one of [1] to [4], comprising a thermal radical polymerizable substance and a thermal radical generator.
[6]
The underfill insulating film for a gang bonding process according to [5], wherein the one-minute half-life temperature of the thermal radical generator is 140 to 200 ° C.
[7]
The underfill insulating film for a gang bonding process according to [5] or [6], comprising a quinone polymerization inhibitor.
[8]
The underfill insulating film for a gang bonding process according to [7], wherein the content (mass) of the polymerization inhibitor is 600 to 10,000 ppm with respect to the amount (mass) of the thermal radical polymerizable substance.
[9]
The underfill insulating film for a gang bonding process according to any one of [1] to [8], comprising an epoxy resin and a latent curing agent.
[10]
The latent curing agent is 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and 2,4-diamino-6- [2′-methylimidazolyl- ( 1 ′)]-Ethyl-s-triazine isocyanuric acid adduct, The underfill insulating film for a gang bonding process according to [9], which is at least one selected from adducts.
[11]
The underfill for a gang bonding process according to any one of [1] to [10], wherein a semiconductor chip on which a soldered electrode is formed and a circuit board on which a counter electrode facing the soldered electrode is formed. A method for manufacturing a semiconductor device, which is bonded through an insulating film,
a) attaching the underfill insulating film for gang bonding process on a wafer having a soldered electrode under vacuum;
b) dividing the wafer into individual gang bonding process semiconductor chips with an underfill insulating film;
c) temporarily bonding the semiconductor chip onto the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
d) A step of thermocompression bonding the temporarily-bonded semiconductor chip and the circuit board under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder mounted on the chip, And a thermocompression bonding step, which is a step in which the semiconductor chip is simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder.
[12]
The underfill for a gang bonding process according to any one of [1] to [10], wherein a semiconductor chip on which a soldered electrode is formed and a circuit board on which a counter electrode facing the soldered electrode is formed. A method for manufacturing a semiconductor device, which is bonded through an insulating film,
a ′) attaching the gang bonding process underfill insulating film on the circuit board;
c) temporarily bonding the semiconductor chip onto the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
d) A step of thermocompression bonding the temporarily-bonded semiconductor chip and the circuit board under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder mounted on the chip, And a thermocompression bonding step, which is a step in which the semiconductor chip is simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder.
[13]
[11] A semiconductor device manufactured by the method of [12].
[14]
Electrical and electronic equipment having the semiconductor device according to [13].

According to the present invention, it is possible to effectively suppress problems such as conduction failure and generation of voids in a so-called gang bonding process having a provisional pressure bonding step and a main pressure bonding step. A film is provided.
The method for manufacturing a semiconductor device using the underfill insulating film for a gang bonding process of the present invention is excellent in productivity and performance of the manufactured semiconductor device.
By using the underfill insulating film for a gang bonding process of the present invention, it is possible to manufacture a semiconductor device having excellent performance, and intermediate products and applied products thereof with high productivity.

It is a schematic diagram which shows the method of flip-chip mounting of the semiconductor chip using an underfill insulating film (NCF) of a prior art. It is a schematic diagram which shows the process using the underfill insulating film (NCF) for gang bonding processes which is one Embodiment of this invention. It is a schematic diagram which shows the TSV process using the underfill insulating film (NCF) for gang bonding processes which is other embodiment of this invention.

(Gang bonding process)
In the present invention, the “gang bonding process” refers to a semiconductor in which a semiconductor chip on which a soldered electrode is formed and a circuit board on which a counter electrode facing the soldered electrode is formed are bonded via an underfill insulating film. A device manufacturing method comprising:
A temporary pressure bonding step of heating and pressurizing the semiconductor chip on the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
A main pressure bonding step of heating and pressurizing the plurality of provisionally pressure-bonded semiconductor chips and the circuit board under a temperature condition in which a maximum temperature is equal to or higher than a melting point temperature of solder mounted on the chips. The manufacturing method.
Here, the underfill insulating film may be affixed to a semiconductor chip on which a soldered electrode is formed or a circuit board on which a counter electrode is formed, prior to the provisional pressure bonding step. Also good.
(Underfill insulation film for gang bonding process)
The underfill insulating film for gang bonding process of the present invention has a melt viscosity η ^* ₁ at 120 ° C. of 2 × 10 ² when the temperature is raised from 60 ° C. to 10 ° C./min in a dynamic viscoelasticity measuring apparatus. a ~2 × 10 ⁴ Pa · s, melt viscosity eta ^* ₂ at 140 ° C. is ^{3 × 10 2 ~3 × 10 5} Pa · s, an under-fill insulating film for gang bonding process.

The melt viscosity η ^* can be measured by using a rheometer (dynamic viscoelasticity measuring device (shear)) and raising the temperature at 10 ° C./min under nitrogen at a frequency of 1 Hz.
When the melt viscosity η ^* ₁ at 120 ° C. is 2 × 10 ² Pa · s or more, it is preferable from the viewpoint of preventing excessive protrusion and resin creeping. The melt viscosity η ^* ₁ at 120 ° C. is more preferably 5 × 10 ² Pa · s or more.
In addition, when the melt viscosity η ^* ₁ at 120 ° C. is 2 × 10 ⁴ Pa · s or less, air is entrained due to a viewpoint of realizing an appropriate viscosity in the temporary bonding step of the gang bonding process and insufficient fluidity. From the viewpoint of suppressing defects such as defective penetration of bumps. In the initial stage of the process when bonding the semiconductor chip and the circuit board, the resin constituting the underfill insulating film for gang bonding process of the present invention exhibits appropriate fluidity, and a narrow space between the semiconductor chip and the board Can be easily filled with no gap, and the resin is not easily caught between the electrode on the semiconductor chip side and the electrode on the substrate side, and it is easy to ensure good electrical conduction between the two. The melt viscosity η ^* ₁ at 120 ° C. is more preferably 5 × 10 ³ Pa · s or less, and further preferably 2 × 10 ³ Pa · s or less.

When the melt viscosity η ^* ₂ at 140 ° C. is 3 × 10 ² Pa · s or more, the resin constituting the NCF is appropriately cured in the middle of the temperature rise, so that generation of voids at the time of pressure bonding can be suppressed. . The melt viscosity η ^* ₂ at 140 ° C. is more preferably 1 × 10 ³ Pa · s or more, and further preferably 5 × 10 ³ Pa · s or more.
Further, by ensuring that the melt viscosity η ^* ₂ at 140 ° C. is 3 × 10 ⁵ Pa · s or less, it is possible to ensure stable conduction at the initial stage of the process of joining the semiconductor chip and the circuit board. Is possible. The melt viscosity η ^* ₂ at 140 ° C. is more preferably 1 × 10 ⁵ Pa · s or less. This is because if the curing progresses too rapidly, there is a possibility that the bump penetrability is poor and there is a tendency for poor conduction.
The melt viscosities η ^* ₁ and η ^* ₂ at 120 ° C. and 140 ° C., for example, appropriately increase or decrease the content of the filler in the film or the resin for film formation, the curing start temperature of the thermosetting resin, the curing rate, etc. Can be adjusted. The curing start temperature and curing rate of the thermosetting resin can be adjusted by changing the decomposition temperature of the thermal radical generator if it is a thermal radical curing system (when including a thermal radical curable polymerizable substance). If it is an epoxy curing system (when an epoxy resin is included), it can be adjusted by changing the curing agent.

In the underfill insulating film for a gang bonding process according to the present invention, the minimum melt viscosity η ^* ₃ when the temperature is raised from 60 ° C. to 160 ° C. in a dynamic viscoelasticity measuring apparatus is 2 × 10. It is preferably ^{2 to} 5 × 10 ³ Pa · s, and the temperature giving the lowest melt viscosity is preferably 100 ° C. to 140 ° C.
By having the lowest melt viscosity η ^* ₃ within the above range in the temperature range of 100 ° C. to 140 ° C., the underfill insulating film for a gang bonding process of the present embodiment is particularly suitable for the temporary bonding step of the gang bonding process. It will have a good viscosity.
The minimum melt viscosity η ^* ₃ is more preferably 4 × 10 ² to 2 × 10 ³ Pa · s.
The temperature giving the minimum melt viscosity is more preferably 105 to 135 ° C, and still more preferably 110 to 130 ° C.
The temperature that gives the minimum melt viscosity η ^* ₃ and the minimum melt viscosity is adjusted, for example, by appropriately increasing or decreasing the content of the filler in the film or the resin for forming the film, the curing start temperature of the thermosetting resin, or the curing rate. can do. The curing start temperature and curing rate of the thermosetting resin can be adjusted by changing the decomposition temperature of the thermal radical generator if it is a thermal radical curing system (when including a thermal radical curable polymerizable substance). If it is an epoxy curing system (when an epoxy resin is included), it can be adjusted by changing the curing agent.

In the underfill insulating film for a gang bonding process of the present invention, in a dynamic viscoelasticity measuring apparatus, the temperature is raised from 60 ° C. to 160 ° C. at 10 ° C./min, then cooled to 60 ° C., and then 10 again. It is preferable that the melt viscosity η ^* ₄ at 150 ° C. when the temperature is raised at ° C./min is 1 × 10 ⁴ to 1 × 10 ⁸ Pa · s. When the melt viscosity η ^* ₄ is in the above range, the underfill insulating film that has undergone heating in the temporary compression bonding and subsequent cooling can exhibit appropriate fluidity in the main compression bonding. Good bonding can be realized between the two.
After the temperature was raised from 60 ° C. to 160 ° C. at 10 ° C./min, the melt viscosity η ^* ₄ at 150 ° C. when cooled to 60 ° C. and then heated again at 10 ° C./min was 1 × It is more preferably 10 ^{5 to} 5 × 10 ⁷ Pa · s, and more preferably 1 × 10 ⁶ to 2 × 10 ⁷ Pa · s.
After the temperature is raised from 60 ° C. to 160 ° C. at 10 ° C./min, the melt viscosity η ^* ₄ at 150 ° C. when the temperature is once cooled to 60 ° C. and then heated again at 10 ° C./min is, for example, It can be adjusted by appropriately increasing or decreasing the curing start temperature and curing rate of the thermosetting resin. The curing start temperature and curing rate of the thermosetting resin can be adjusted by changing the decomposition temperature of the thermal radical generator if it is a thermal radical curing system (when including a thermal radical curable polymerizable substance). If it is an epoxy curing system (when an epoxy resin is included), it can be adjusted by changing the curing agent.

In the process using the underfill insulating film for a gang bonding process of the present invention, typically, a soldered electrode formed on a semiconductor chip and a counter electrode formed on a circuit board are in direct contact or bonded. As a result, conduction is ensured. In this respect, the underfill insulating film for a gang bonding process of the present invention is also used for bonding between a semiconductor chip and a substrate, but it is a so-called anisotropic film that allows conduction between a semiconductor chip and a circuit through conductive particles. Differentiated from conductive film (ACF).
Regarding the characteristics of the resin, since the anisotropic conductive film is usually used when mounting a driver chip of a display, it is required to be cured at a maximum temperature of 200 ° C. or less and about 180 ° C. for a display without heat resistance. . In addition, since the conductive particles are presupposed, the required level for the penetrability of the bumps is low. The inventors have found that when the resin prescription used in the anisotropic conductive film is applied to the resin prescription of the underfill insulating film, it cures quickly, resulting in poor bonding due to poor fluidity during crimping. It was. Thus, it is difficult to apply the anisotropic conductive film resin formulation to the underfill insulating film as it is.

  The conductive particles contained in the anisotropic conductive film are fine particles having a diameter of several μm to several tens of μm. However, in recent years, with the further miniaturization of semiconductor elements and higher density of mounting, Even if fine conductive particles are used, it is difficult to completely eliminate the risk of unintended short-circuiting between electrodes. From this viewpoint, the underfill insulating film for gang bonding process is anisotropically conductive. The film for underfill is more suitable for high-density mounting of semiconductor elements that are miniaturized as compared with the conductive film, and its superiority is expected to become even more remarkable in the future.

In the underfill insulating film for a gang bonding process of the present invention, as described above, it is preferable not to have conductivity even in the thickness direction in order to prevent unintended short-circuiting between electrodes. From the viewpoint of preventing short circuit, the underfill insulating film for gang bonding process of the present invention has a low content of conductive particles or substantially does not contain conductive particles unless otherwise technically required. It is desirable. That is, the content of conductive particles in the underfill insulating film for a gang bonding process of the present invention is preferably 5% by mass or less, and particularly preferably 2% by mass or less.
From the viewpoint of short circuit prevention, it is desirable that the underfill insulating film for a gang bonding process of the present invention has a low metal content or substantially no metal unless there is a technical need. That is, the metal content of the underfill insulating film for a gang bonding process of the present invention is preferably 5% by mass or less, and particularly preferably 2% by mass or less.

The underfill insulating film for a gang bonding process of the present invention only needs to satisfy the above conditions for the melt viscosity η ^* ₁ and η ^* _{2 at} a specific temperature. Although there is no limitation, it is preferable to include a polymer resin for film formation, and in view of the degree of freedom in design for realizing desired curing characteristics including the above melt viscosity, a plurality of thermosettings More preferably, it comprises a combination of functional resins.

(Resin for film formation)
As the resin for film formation, for example, phenoxy resin, polyimide resin, polyamideimide resin, polyamide resin, and acrylic resin are preferable. From the viewpoint of the glass transition point after curing, a phenoxy resin, a polyimide resin, and a polyamideimide resin are more preferable, and a resin that can be dissolved in an organic solvent is preferable from the viewpoint of film production. Preferred solvents are preferably soluble in ethyl acetate, toluene, methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclohexanone, dimethylacetamide (DMAC), and N-methyl-2-pyrrolidone (NMP) at low temperatures. It is more preferable that the solvent can be dissolved in a solvent having a boiling point of 150 ° C. or lower from the viewpoint of drying.
As the resin for film formation, one kind may be used alone, or two or more kinds may be used in combination.
Moreover, if the resin for film formation is modified with a functional group that reacts with a thermosetting resin described later, physical properties after curing, such as Tg and thermal expansion coefficient, are improved. On the other hand, since it is necessary to maintain the latent curability before pressure bonding, it is often better to avoid functional groups with high activity.
It is preferable that the compatibility with the thermosetting resin described later is high. This is because if the NCF resin is phase-separated and becomes turbid, the mark visibility on the chip surface deteriorates when it is applied to the bump surface.
Further, as the physical properties after curing of the mounting material, it is required that the glass transition point is high and the coefficient of thermal expansion is low as in the case of the liquid underfill. From such a viewpoint, the following resins are more preferable.

(Phenoxy resin)
As the resin for film formation, a phenoxy resin is particularly preferable from the viewpoint of glass transition point such as solvent solubility, compatibility with thermosetting resin, film forming ability, insulation, and the like.
Preferred phenoxy resins include bisphenol skeleton (bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenol acetophenone skeleton, etc.), novolak skeleton, biphenyl skeleton, fluorene skeleton, dicyclopentadiene skeleton, norbornene skeleton, naphthalene skeleton, anthracene skeleton, Examples include, but are not limited to, phenoxy resins having one or more skeletons selected from the group consisting of an adamantane skeleton, a terpene skeleton, and a trimethylcyclohexane skeleton.

  Among these, in the present invention, a phenoxy resin having one or more skeletons selected from the group consisting of a bisphenol skeleton, a biphenyl skeleton, and a fluorene skeleton is preferable, and a group consisting of a bisphenol A skeleton, a bisphenol F skeleton, a biphenyl skeleton, and a fluorene skeleton. A phenoxy resin having one or more skeletons selected from is more preferable.

Especially, the phenoxy resin which has a structure represented by the following general formula (P1) is preferable.

Here, Rx and Ry each independently represents a hydrogen atom or a glycidyl group. L represents a single bond, or —C (Ra) (Rb) —, —O—, —S— or —SO ₂ —. Here, Ra and Rb each independently represent a hydrogen atom or an alkyl group.
R ¹ represents a hydrogen atom, an alkyl group, an alkoxy group or a halogen atom. The alkyl group for R ¹ preferably has 1 to 10 carbon atoms, more preferably 1 to 4, and most preferably 1. Examples include methyl, ethyl, isopropyl, t-butyl, t-pentyl, 2-ethylhexyl, t-octyl, and n-nonyl. Alkoxy group in R ¹ is preferably 1 to 10 carbon atoms, more preferably 1 to 4, 1 being the most preferred. Examples include methoxy, ethoxy, isopropoxy, n-butoxy, 2-ethylhexyloxy, n-octyloxy, and n-nonyloxy. Examples of the halogen atom in R ¹ include a fluorine atom, a chlorine atom, and a bromine atom. R ¹ is particularly preferably a hydrogen atom.
m1 is preferably an integer of 0 to 2, more preferably 0 or 1, and most preferably 0.

  As the phenoxy resin having a fluorene skeleton, a phenoxy resin obtained by a reaction of 9,9-bis (4-hydroxyphenyl) fluorene with diglycidyl ether of bisphenol and / or diglycidyl ether of biphenol is preferable. Among them, a phenoxy resin obtained by reaction of biphenol with diglycidyl ether is preferable, and a phenoxy resin obtained by reaction with 2,2 ′, 6,6′-tetramethyl-4,4′-biphenol diglycidyl ether is preferable. Particularly preferred.

  The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or a glycidyl group, but a glycidyl group is preferred from the viewpoint of reactivity with other components. A phenoxy resin may be used alone or in combination of two or more.

  Examples of commercially available phenoxy resins include, for example, trade names of Toto Kasei Co., Ltd., FX280, FX293, FX293S (fluorene skeleton-containing phenoxy resin), trade names of Mitsubishi Chemical Corporation, jER 1256, jER 4250, Trade name, YP-50, YP-50S (all bisphenol A skeleton-containing phenoxy resin) manufactured by Nippon Steel Chemical Co., Ltd., trade name, YX8100 (bisphenol S skeleton-containing phenoxy resin) manufactured by Mitsubishi Chemical Corporation Trade name, YX6954 (bisphenol acetophenone skeleton-containing phenoxy resin) manufactured by Mitsubishi Chemical Corporation, trade names manufactured by Mitsubishi Chemical Corporation, YX7200, YL7553, YL6794, YL7213, YL7290, YL7482 and the like.

In the present invention, the molecular weight of the phenoxy resin that can be preferably used as the resin for film formation is not particularly limited, but from the viewpoint of film forming ability, a phenoxy resin having a number average molecular weight exceeding 5000 in terms of polystyrene may be used. preferable. The number average molecular weight of the phenoxy resin is more preferably 7000 or more, and particularly preferably 9000 or more. On the other hand, the upper limit of the number average molecular weight of the phenoxy resin is not particularly limited, but is preferably 15000 or less and more preferably 12000 or less. When the number average molecular weight is 15000 or less, solubility in an organic solvent is improved, and productivity can be improved.
The epoxy equivalent of the phenoxy resin is preferably in the range of 3000 to 20000, more preferably 5000 to 10,000.
Moreover, it is preferable that the glass transition temperature measured with a differential scanning calorimeter is 80 degreeC or more, More preferably, 130 degreeC or more is preferable. When the glass transition temperature is within this range, the glass transition temperature of the entire cured insulating film for underfilm is increased, and the reliability of the mounted product is improved. There is no particular upper limit to the glass transition temperature, but a temperature of 250 ° C. or lower is preferable from the viewpoint of solvent solubility.

  In the present invention, when the phenoxy resin is used as the film forming resin, the content of the phenoxy resin is not particularly limited, but 10 parts by mass of the total of 100 parts by mass of the film forming resin and the thermosetting resin. Or more, preferably 20 parts by mass or more, more preferably 25 parts by mass or more. When the amount is 10 parts by mass or more, an appropriate strength is easily developed when a film is produced or used in an uncured stage. On the other hand, the content of the phenoxy resin is usually 50 parts by mass or less, preferably 40 parts by mass or less. When it is 50 parts by mass or less, problems such as poor fluidity and insufficient curing due to thermosetting resin can be effectively suppressed.

(Polyimide resin)
A solvent-soluble polyimide that is polymerized by dehydration condensation of a commercially available tetracarboxylic acid and diamine in a solvent is also suitable as a film-forming polymer preferably used in the present invention. A solvent-soluble polyimide can be polymerized with a combination of known monomers.
As the reaction point with the thermosetting resin, those having a reactive group in the side chain are more preferable in terms of increasing the Tg after curing and decreasing the thermal expansion coefficient. A Tg of about 50 to 200 ° C. is preferable for the development of melting characteristics when combined with a thermosetting resin.
The polyamideimide resin can also be applied to the present invention with the same index as the polyimide resin.

(Thermosetting resin)
From the viewpoint of realizing specific melt viscosities η ^* ₁ and η ^* ₂ at the above specific temperature and conditions, the underfill insulating film for gang bonding process of the present invention is a solid film at room temperature and is once melted by heating. Thus, the so-called thermosetting property is required, in which the viscosity is lowered and can be bonded, the bump can be penetrated, and further cured by heating to increase the viscosity and suppress voids. For this purpose, it is preferable to add a thermosetting resin to the film-forming resin.
Examples of thermosetting resins include epoxy resins, thermal radical polymerizable substances, urethane resins, thermosetting polyamide resins, etc., but there are potentials such as the cure start temperature, the degree of freedom in the design of the curing speed characteristics, etc. In view of the above, a system in which a thermal radical polymerizable substance and a thermal radical generator are combined is preferable, and an epoxy resin added is particularly preferable on the adhesive surface to the adherend.

(Epoxy resin)
The underfill insulating film for a gang bonding process of the present invention desirably contains an epoxy resin from the viewpoint of imparting adhesion to an adherend.
Examples of the epoxy resin include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, cresol novolac type. Type, trishydroxyphenylmethane type, tetraphenylolethane type and other bifunctional epoxy resins and polyfunctional epoxy resins, or hydantoin type, trisglycidyl isocyanurate type or glycidylamine type epoxy resins can be used. It is not limited to. Epoxy resins can be used alone or in combination of two or more. From the viewpoint of alignment mark visibility, those that are compatible with the resin for film formation and other thermosetting resins and that do not phase separate with them are preferred.
From the viewpoint of reducing stickiness at room temperature, a solid epoxy resin is preferable, and from the viewpoint of improving the glass transition point and the elastic modulus after curing, a bifunctional or higher polyfunctional epoxy resin is more preferable. For these reasons, a cresol novolac type epoxy resin can be particularly preferably used.

The cresol novolak type epoxy resin may be any of an o-cresol novolak type epoxy resin, an m-cresol novolak type epoxy resin, and a p-cresol novolak type epoxy resin, and in particular, an o- represented by the following formula: Cresol novolac type epoxy resins are preferred. The glycidyl groups in these resins are preferably those obtained by substituting the phenolic hydroxyl groups in the corresponding cresol novolak resins with glycidoxy groups.
The molecular weight of the cresol novolac type epoxy resin is preferably 800 to 1300, more preferably 900 to 1300. As a softening point, 60 degreeC or more is preferable, More preferably, 80 degreeC or more is preferable.

  In the present invention, when an epoxy resin is used as the resin for imparting adhesion and adjusting the curing rate, the content of the epoxy resin is not particularly limited, but the total of 100 parts by mass of the resin for film formation and the thermosetting resin. The amount is usually 10 parts by mass or more, preferably 15 parts by mass or more, and more preferably 20 parts by mass or more. Since it is 10 mass parts or more, the adhesiveness of the whole film and a cure rate can be controlled appropriately. On the other hand, the content of the epoxy resin is usually 50 parts by mass or less, preferably 30 parts by mass or less. Since it is 50 mass parts or less, the disadvantageous influence on film formation can be suppressed and the compounding quantity of the radical curing system for void suppression can also be ensured.

(Thermal radical polymerizable substance)
The underfill insulating film for a gang bonding process of the present invention preferably contains a thermal radical polymerizable substance for the purpose of suppressing voids during curing. A thermal radical reaction system is excellent for developing rapid curability in a temperature range that has potential and suppresses voids in NCF applications.
Here, the thermal radical polymerizable substance is a substance having a functional group that is polymerized by a thermal radical, and examples thereof include (meth) acrylates and maleimide compounds. The thermal radical polymerizable substance can be used in a monomer or oligomer state, and the monomer and oligomer can be used in combination.
As the thermal radical polymerizable substance, (meth) acrylate is particularly preferable. As the (meth) acrylate, monofunctional (meth) acrylate or bifunctional or higher (meth) acrylate can be used. Examples of the monofunctional (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, and n-butyl (meth) acrylate. Bifunctional or higher (meth) acrylates include bisphenol F-EO modified di (meth) acrylate, bisphenol A-EO modified di (meth) acrylate, bisphenol F epoxy (meth) acrylate, bisphenol A epoxy (meth) acrylate, tri Examples include methylolpropane tri (meth) acrylate, trimethylolpropane EO-modified tri (meth) acrylate, and polyfunctional urethane (meth) acrylate. These thermal radical polymerizable substances may be used alone or in combination of two or more.
Among these, a bifunctional (meth) acrylate is preferably used because of easy control of the characteristics during curing. Among these, epoxy (meth) acrylate and the like are particularly preferably used from the viewpoints of compatibility and heat resistance.
In order to introduce a crosslinked structure, it is also preferable to use a polyfunctional (meth) acrylate in combination. As the polyfunctional (meth) acrylate, trimethylolpropane tri (meth) acrylate and the like are particularly preferably used.

Although there is no restriction | limiting in particular in content of a heat | fever radically polymerizable substance, Usually, it is 30 mass parts or more in the total of 100 mass parts of resin for film formation, and a thermosetting resin, Preferably it is 40 mass parts or more. . Since it is 30 mass parts or more, the suppression of the void at the time of hardening, etc. becomes easy. On the other hand, the content of the thermal radical polymerizable substance is usually 70 parts by mass or less, preferably 60 parts by mass or less. The stickiness of the underfill insulating film for a gang bonding process can be suppressed as it is 70 mass parts or less. When the stickiness is small, handling of wafers and chips with NCF becomes easier. The conveyance trouble which sticks to the jigs which contact an NCF surface can also be controlled. Garbage can also be suppressed.
Moreover, in order not to deteriorate the visibility when pasted on a chip, it is preferable to select a structure that does not phase separate from other resins.

(Epoxy curing agent)
In the present invention, when an epoxy resin is used as a resin for imparting adhesion and adjusting the curing rate, it is preferable to use an epoxy curing agent as appropriate. In this application, since latency, migration resistance, and an appropriate curing speed are required, it is desirable to appropriately select an applicable curing agent. Among these, the rapid curing necessary for void suppression can be carried out by the thermal radical curing system, so that the latent curing is particularly important. That is, it is preferable to use a latent curing agent.
Among known curing agents, both amine-based and acid anhydride-based latents are not always sufficient, and it is preferable to select one that meets this purpose to some extent from phenol curing and imidazole curing.
Among these, a solid and good latent imidazole curing agent can be preferably used. More specifically, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′ )]-Ethyl-s-triazine isocyanuric acid adduct and the like can be used particularly preferably.

  The content of the epoxy curing agent is preferably 0.1 to 10 parts by mass, more preferably 1 to 5 parts by mass with respect to 100 parts by mass in total of the resin for film formation and the thermosetting resin. . By being 0.1 mass part or more, the hardening time by heat processing becomes short and it becomes easy to improve productivity. Moreover, it becomes easy to ensure long-term storage stability because content of an epoxy hardening | curing agent is 10 mass parts or less, and it is preferable also from a viewpoint of the outgas suppression at the time of pressure bonding.

(Thermal radical generator)
When the underfill insulating film for a gang bonding process of the present invention includes a thermal radical polymerizable substance such as an acrylic compound, a thermal radical such as an organic peroxide or an azo compound is used to accelerate the polymerization of the thermal radical polymerizable substance. It is preferable to use a generator in combination.
As the organic peroxide, for example, peroxyesters, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxydicarbonates and the like can be preferably used. These organic peroxides may be used alone or in combination of two or more.
Among these thermal radical generators, those having a one-minute half-life temperature of 140 ° C. or higher are preferable, and more preferably 160 ° C. or higher. When the half-life temperature for 1 minute is 140 ° C. or higher, the resin fluidity at the time of pressure bonding is appropriate, so that the resin engagement between the electrodes between the chip and the substrate (curing proceeds before the electrodes come into contact with each other) It is preferably used from the viewpoint of suppressing the phenomenon that the resin bites in between. On the other hand, the one-minute half-life temperature is preferably 200 ° C. or lower, more preferably 190 ° C. or lower. When the 1-minute half-life temperature is 200 ° C. or lower, curing at the time of pressure bonding is appropriate, and the effect of suppressing voids is high.
Furthermore, the molecular weight of the thermal radical generator is preferably 200 or more, more preferably 250 or more, from the viewpoint of suppressing peroxide volatilization in the solvent drying step during film production.
Among these, 2,2-di (4,4-di- (t-butylperoxy) cyclohexyl) propane (manufactured by NOF Corporation, Pertetra A), n-butyl-4,4-di (t- Butyl peroxy) valerate (manufactured by NOF Corporation, Perhexa V), 2,5-dimethyl-2,5-bis (t-butylperoxy) hexane (manufactured by NOF Corporation, Perhexa 25B), 2,5- Dimethyl-2,5-di (t-butylperoxy) -3-hexyne (manufactured by NOF Corporation, perhexine 25B) is preferably used.
Although there is no restriction | limiting in particular in the addition amount of thermal radical generators, such as an organic peroxide, Usually, 0.1-5 mass parts is added with respect to a total of 100 mass parts of resin for film formation, and a thermosetting resin. It is particularly preferable to add 0.3 to 3 parts by mass. Since it is 0.1 part by mass or more, curing of acrylate or the like is sufficient, and since it is 5 parts by mass or less, the storage stability of the underfill insulating film for the gang bonding process is good, and the outgas at the time of pressure bonding is Since it is suppressed, it is preferable also from a viewpoint of void suppression.

(Polymerization inhibitor)
The underfill insulating film for a gang bonding process of the present invention preferably contains a polymerization inhibitor in addition to the thermal radical polymerizable substance and the thermal radical generator. By containing a polymerization inhibitor, unnecessary polymerization of the thermal radical polymerizable substance during storage can be suppressed, so that storage stability is improved. In the case of a thermal radical curing system, the curing start temperature and the curing rate can be adjusted.
The content (mass) of the polymerization inhibitor is preferably 600 to 10000 ppm, more preferably 800 to 5000 ppm with respect to the amount (mass) of the thermal radical polymerizable substance. Since the content of the polymerization inhibitor is 600 ppm or more, it is easy to realize sufficient storage stability, and since it is 100000 ppm or less, it does not unnecessarily inhibit the polymerization of the thermal radical polymerizable substance at the time of curing, Voids and the like can be effectively suppressed. In particular, when NCF is attached to a semiconductor wafer, the chip with NCF is FC-connected after dicing and pick-up processes. It may take time from wafer lamination to flip chip connection, and particularly high storage stability is required. For this reason, it is preferable to contain a polymerization inhibitor in said range.

There is no restriction | limiting in particular in the kind of polymerization inhibitor, A suitable polymerization inhibitor can be used suitably in relation to the kind of thermal radically polymerizable substance, a polymerization mechanism, etc. For example, quinones such as hydroquinone, methyl ether hydroquinone, p-benzoquinone, t-butylparabenzoquinone, 2,5-dichloro-p-benzoquinone, 2,6-dichloro-p-benzoquinone, tetrachloro-p-benzoquinone; -Nitro compounds such as dinitrobenzene, m-dinitrobenzene, 2,4-dinitrotoluene, 1,3,5-trinitrobenzene, 1,3,5-trinitrotoluene; o-nitrophenol, m-nitrophenol, p- Nitrophenols such as nitrophenol, 2,4-dinitrophenol and 2,4,6-trinitrophenol; nitroso and nitrone compounds such as methyl-α-nitrosoisopropylketone and phenyl-t-butylnitrone; iron chloride (III ) And other metal salts, phenothiazine, etc. Although it is Rukoto, but are not limited to.
Among these, quinones are preferably used from the viewpoint that the effect of inhibiting polymerization can be effectively exhibited even in the step of attaching NCF to the bump forming surface of the wafer, and p-benzoquinone (also referred to as PBQ), methyl-p-benzoquinone. T-butylparabenzoquinone (also referred to as TBQ) and 2,5-diphenyl-p-benzoquinone are particularly preferable.

(Flux agent)
Further, in addition to / in place of the epoxy curing agent, an acid (anhydride) having a flux function may be used. In addition to being able to cure the epoxy resin, such an acid (anhydride) has a flux function so that the oxide film on the solder surface and the electrode surface can be removed. It is preferable because the electrical connection between them can be made easier and more reliable.
Examples of the acid (anhydride) having a flux function include aliphatic dicarboxylic acids such as adipic acid, aliphatic propylene anhydrides such as tetrapropenyl succinic anhydride and dodecenyl succinic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride. Examples thereof include alicyclic acid anhydrides such as acids, aromatic acid anhydrides such as phthalic anhydride, trimellitic anhydride, and pyromellitic anhydride. These acids (anhydrides) having a flux function may be used alone or in combination of two or more. If these fluxes can be dispersed in solid form in NCF, the potential becomes advantageous in terms of reaction with the epoxy resin. In order to disperse in a solid form, those having poor solubility in a solvent used in a compounding liquid described later are preferable. It is advisable to pulverize and mix to a sufficiently small size relative to the NCF film thickness. On the other hand, it is preferable that the melting point is reached at a temperature lower than the solder melting temperature to exhibit flux activity. Among these acids (anhydrides), succinic acid, adipic acid and the like are particularly preferable in view of the above characteristics, solder connectivity, epoxy curing action, industrial availability, and the like.

  The blending amount of the acid (anhydride) having a flux function is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 100 parts by mass in total of the resin for film formation and the thermosetting resin. Is 0.5 parts by mass or more and 3 parts by mass or less. When the blending amount of the acid (anhydride) having a flux function is 0.1 parts by mass or more, solder wetting can be promoted and electrical connection between the semiconductor chip and the substrate can be effectively promoted. If the compounding quantity of the acid (anhydride) which has a flux function is 10 mass parts or less, it is preferable from a viewpoint of ensuring storage stability and suppressing outgas at the time of a compression test.

(Filler)
By adding the filler, the coefficient of thermal expansion of the underfill insulating film for gang bonding process is reduced, the dimensional stability is improved, the thermal stress on the chip and the substrate is reduced, and the reliability is also improved. On the other hand, as the filling amount increases, the flow characteristics deteriorate. In terms of the visibility of the mark, in the case of a filler having a refractive index difference from that of the resin, if the size is larger from the vicinity of the wavelength of light, scattering occurs and the visibility is deteriorated. Further, if a filler having a larger size is interposed in the chip / substrate gap, it causes a defect such as chip crack. If a large filler bites between the bump and the electrode, conduction failure occurs.
As long as the inorganic filler satisfies the above conditions, silica (fused silica, crystalline silica, fumed silica, etc.), alumina, aluminum nitride, silicon nitride, boron nitride powder, etc. may be used. From the viewpoint of fluidity, fumed silica or fused silica is particularly preferable.

The average particle diameter of the inorganic filler is preferably 0.01 μm or more. When it is 0.01 μm or more, an increase in melt viscosity due to the interaction between the filler and the resin can be suppressed. The average particle diameter of the inorganic filler is preferably 3 μm or less, more preferably from the viewpoint of suppressing filler bite between the semiconductor element and the electrode of the substrate and the transparency of the underfill insulating film for the gang bonding process, more preferably It is 1 μm or less, more preferably 0.1 μm or less. The average particle diameter can be determined by observation with a photometric particle size distribution meter (for example, HORIBA, apparatus name: LA-910) or a microscope. However, in these fine powders, the secondary particle size is measured unless the dispersion treatment is carried out satisfactorily.
The particle size of the filler is preferably top-cut by classification operation, and it is preferable to cut coarse particles with a filter in the course of blending, dispersing, and coating.

  The content of the inorganic filler in the underfill insulating film for gang bonding process is preferably 5% by mass or more, more preferably 10% by mass or more, and particularly preferably 15% by mass or more. When it is 5% by mass or more, the coefficient of thermal expansion after curing becomes better than that of no addition. Moreover, the content of the inorganic filler in the underfill insulating film for a gang bonding process is preferably 60% by mass or less, more preferably 40% by mass or less. When it is 60% by mass or less, fluidity can be ensured, good transparency can be obtained, and biting of the filler can be satisfactorily suppressed when the semiconductor chip is mounted on the substrate via NCF.

(Other additives)
In the underfill insulating film for a gang bonding process of the present invention, components other than those described above can be appropriately blended as long as the object of the present invention is not violated. Examples of other components include a flame retardant, a silane coupling agent, an ion trap agent, and an organic filler.
Examples of the flame retardant include, but are not limited to, phosphorus compounds, metal hydroxides, antimony trioxide, antimony pentoxide, brominated epoxy resins, and the like.
By adding the silane coupling agent, it is possible to improve the adhesion between the filler and the resin interface, the semiconductor chip used in the process, the circuit board, etc., and the underfill insulating film for the gang bonding process. Examples of silane coupling agents include epoxy groups such as β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. And those having a reactive double bond can be used, but are not limited thereto.
By adding an ion trap agent, ionic impurities such as cations and anions generated from other materials that make up the underfill insulation film for electrode wiring and gang bonding processes are captured, preventing migration and corrosion of the wiring. can do. Examples of ion trapping agents that can be used include hydrotalcites, bismuth hydroxide, and chelates, but are not limited thereto.

(Manufacturing method of underfill insulating film for gang bonding process)
The underfill insulating film for a gang bonding process of the present invention is produced, for example, as follows. First, the above-mentioned components that are materials for forming an underfill insulating film for a gang bonding process are blended and dissolved or dispersed in a solvent (for example, methyl ethyl ketone, ethyl acetate, toluene, etc.) to prepare a coating solution. When the filler is dispersed, the filler is dispersed using a dispersing device such as a bead mill as necessary. Next, after applying the prepared coating solution to a predetermined thickness on a base separator with a general-purpose coater, the solvent is dried using a heat oven or the like, and an underfill insulating film for a gang bonding process is obtained. Form. As the drying condition, if the residual solvent is extremely left, it becomes a cause of generation of voids at the time of FC connection. Therefore, it is preferable to adjust the drying condition to at least 1% or less. The drying temperature and drying time are preferably adjusted to such an extent that the curing reaction does not significantly start in the drying process. It is recommended to adjust the temperature at 100 ° C for several minutes.
Since there is a limit to the thickness that can be applied under the above conditions, when an excessively thick NCF is required, a predetermined thickness can be obtained by stacking a plurality of NCFs having a thickness that satisfies the residual solvent condition.
The base separator is preferably, for example, a PET (polyethylene terephthalate), OPP (stretched polypropylene), CPP, poly-4-methylpentene-1, PTFE, or the like with a release agent such as silicone applied as necessary. Can be used.
In consideration of adhesion of foreign matters, it is better not to handle NCF barely. In such a surface, after drying with the above-mentioned coater, the slightly adhesive film may be laminated on the NCF surface, or the separator may be laminated by heating. If a difference is provided in the ease of peeling of the easily peelable material on both sides of the NCF, the subsequent handling of the NCF becomes easy. By separating the easily peelable material on the side that can be lightly peeled first, NCF can be stably left on the heavily peelable easily peelable material.

The thickness of the underfill insulating film for a gang bonding process of the present invention is not particularly limited, and may be appropriately set in consideration of the gap between the semiconductor chip and the circuit board and the height of connection members such as electrodes and solder. That's fine. Assuming the current normal process, a thickness of about 1 to 250 μm is preferable, and a thickness of about 5 to 25 μm is more preferable. In the case of flip-chip connection between silicon materials, since the thermal stress is small, the necessity of making a gap large is small, and it is assumed that the gap will become small in the future. On the other hand, when the resin substrate and the chip are connected, the bump height is increased so that the thermal stress can be reduced according to the chip size and the resin substrate material characteristics. It is good to prepare the film thickness corresponding to each.
In the space under the chip filled with the underfill insulating film, there is a volume of protrusions such as bumps, and there is an appropriate gap in which the bumps are appropriately crushed. In order to form such an appropriate gap, subtract the bump volume from the volume calculated by the product of the gap and the chip area, and divide the volume by the chip area by adding the volume of good protrusion formation. An appropriate film thickness can be estimated. Since the fluidity of the underfill insulating film varies depending on the bump layout, it is more preferable to test with an actual chip.

(Product form of underfill insulation film for gang bonding process)
The underfill insulating film for a gang bonding process of the present invention is preferably protected by a release film. The release film has a function as a protective material for protecting the underfill insulating film for a gang bonding process until it is subjected to an actual process. The release film is peeled off when, for example, a semiconductor element is stuck on an underfill insulating film for a gang bonding process. As the release film, an easily peelable film such as a separator or a slightly adhesive film used in the above manufacturing process may be used as it is.
An underfill insulating film for a gang bonding process may be laminated with a back grind (BG) tape. As an underfill insulating film usage method, as an adhesive tape for circuit surface protection at the time of back grinding (BG), an easily peelable film / underfill insulating film configuration is used by sticking to the bump surface of a wafer, and an easily peelable film layer A method is disclosed in which a chip with an underfill insulating film is obtained by dicing the underfill insulating film and the wafer after peeling off. The underfill insulating film for a gang bonding process of the present invention may be used in such a form.
Furthermore, an underfill insulating film for a gang bonding process may be laminated with a dicing (DC) tape. As a method of using the underfill insulating film, a method of using the dicing tape and the underfill insulating film integrally is similarly disclosed, and the underfill insulating film for a gang bonding process of the present invention is used in such a form. May be.

(Method for manufacturing semiconductor device)
Using the underfill insulating film for a gang bonding process of the present invention, for example, by filling a space between a semiconductor chip and a circuit board, a soldered electrode formed on a semiconductor chip and provided on the circuit board The junction with the counter electrode can be protected.
As a solder material, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, a tin-zinc-bismuth metal material, or the like is preferably used. it can. It also includes a structure in which the solder is formed at the tip of the copper pillar. The material of the electrode and the counter electrode is not particularly limited as long as it is conductive, and examples thereof include gold / nickel and copper.

As one embodiment of the present invention, a semiconductor chip on which a soldered electrode is formed and a circuit board on which a counter electrode facing the soldered electrode is formed via an underfill insulating film for a gang bonding process of the present invention. A method for manufacturing a semiconductor device, comprising:
a) attaching the underfill insulating film for gang bonding process on a wafer having a soldered electrode under vacuum;
b) dividing the wafer into individual gang bonding process semiconductor chips with an underfill insulating film;
c) temporarily bonding the semiconductor chip onto the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
d) A step of thermocompression bonding the temporarily-bonded semiconductor chip and the circuit board under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder mounted on the chip, And a method of manufacturing the semiconductor device, which includes a thermocompression bonding step in which the semiconductor chip is simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder.

In addition, an underfill insulating film for a gang bonding process may be first attached to the substrate side instead of the wafer. As an embodiment in such a case, the semiconductor chip on which the soldered electrode is formed, and the soldered electrode are opposed to each other. A circuit board on which a counter electrode is formed is bonded via an underfill insulating film for a gang bonding process according to the present invention.
a ′) attaching the gang bonding process underfill insulating film on the circuit board;
c) temporarily bonding the semiconductor chip onto the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
d) A step of thermocompression bonding the temporarily-bonded semiconductor chip and the circuit board under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder mounted on the chip, And a method of manufacturing the semiconductor device, which includes a thermocompression bonding step in which the semiconductor chip is simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder.

  In the above embodiment, the underfill insulating film for a gang bonding process according to the present invention, which exhibits appropriate plasticity and fluidity in temporary bonding, and does not generate voids during solder melting in main pressing for bonding a semiconductor chip and a substrate. Because it uses, to ensure the conduction of the joint between the soldered electrode formed on the semiconductor chip and the counter electrode provided on the circuit board, the space between the semiconductor chip and the circuit board is filled without voids, And it becomes possible to provide the high reliability of the semiconductor chip mounted on the circuit board after hardening. Furthermore, a gang bonding process is adopted, and a plurality of pre-bonded semiconductor chips are simultaneously heated to a temperature condition equal to or higher than the melting point temperature of the solder, thereby requiring a long tact time for heating and cooling the head. Therefore, a semiconductor device can be manufactured with high productivity.

Hereinafter, the manufacturing method of the semiconductor device of the above aspect will be described with reference to the drawings.
First, a method of flip-chip mounting a semiconductor chip using an underfill insulating film (NCF) according to the prior art will be described with reference to FIG.
FIG. 1 (A) is a step after attaching a underfill insulating film on a wafer having soldered electrodes under vacuum, and after dividing the wafer into individual semiconductor chips with an underfill insulating film, The semiconductor chip (1) and the circuit board (5) before the step of pressure-bonding the semiconductor chip onto the circuit board so that the electrodes of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on substantially the center line. It is sectional drawing which shows typically an underfill insulating film (4). The semiconductor chip (1) has an integrated circuit formed on a semiconductor surface such as silicon and has soldered electrodes for connection called bumps. The soldered electrode is obtained by forming a solder (3) on an electrode (2a) made of copper or the like via a diffusion preventing metal film of a bump material.
These solder surfaces oxidize over time. If the oxide film is removed by plasma treatment or the like before attaching NCF, more stable bonding can be obtained.

  The circuit substrate (5) has a circuit formed on a base material such as a rigid substrate, a flexible substrate, a silicon substrate, a glass substrate, or the like. In addition, on the mounting portion on which the semiconductor chip (1) is mounted, a counter electrode (2b) having a predetermined thickness is formed at a position facing the soldered electrode of the semiconductor chip (1).

Here, an underfill insulating film (4) is attached to the bumped semiconductor chip (1) in a step (not shown). Affixing is performed at a temperature of 60 to 120 ° C. under a vacuum, for example. The underfill insulating film (4) exhibits fluidity, fills the unevenness caused by the electrodes (2a) and the solder (3) formed on the semiconductor chip (1), and is in close contact with the semiconductor chip (1).
Then, each chip | tip with an under film is produced by separating the wafer with an underfill insulating film into pieces.

  First, the plurality of electrodes (2a) and the plurality of counter electrodes (2b) are positioned after recognizing the marks so that they are in contact with each other on the substantially center line. Mark recognition is performed with a flip chip bonder by recognizing a mark formed near the chip mounting portion of the substrate and a mark formed on the chip surface with a camera. At this time, if the mark edge cannot be clearly identified through the NCF, the mounting position accuracy deteriorates. Also on the device side, we will make it easy to recognize the mark edge with coaxial / diffuse lighting. Next, as shown in FIG. 1A, the head or stage moves based on the coordinates registered in advance, and alignment is performed.

Next, as shown in FIG. 1B, the head (6) is heated while pressurizing the semiconductor chip to which the underfill insulating film (4) is attached, and the semiconductor chip is placed on the circuit board (5). ) Thermocompress on top.
At this time, the stage side is set to about 80 ° C. to 180 ° C. in a setting with a constant heater. In the case of a resin substrate, warpage occurs, and therefore, about 60 to 100 ° C. is preferable. In the case where a silicon chip or silicon wafer is placed on the stage, the head material escapes to the stage side because the substrate material has good heat transfer, and the actual temperature of the chip is significantly lower than the head setting, so the stage temperature is increased. It is good to set to.
The NCF chip is held on the head side, but this temperature is a temperature at which the underfill insulating film has fluidity at the initial stage of applying weight, but does not start to harden significantly, for example, 60 ° C to 150 ° C. The range is preferably, and more preferably in the range of 80 ° C to 130 ° C. The time for which sufficient bump contact can be realized on the entire surface of the chip varies depending on the chip size and the bump layout. Therefore, it is preferable to adjust the time within a range of several seconds.
Next, the head side is heated so that the actual temperature of the chip becomes the solder melting temperature. There is often a difference between the set temperature of the head (6) and the actual bump temperature due to the heat escape to the stage, so a simulated chip with a thermocouple under the chip, It is preferable to check the correspondence between the actual temperature and the set temperature.
The duration at the solder melting temperature is preferably in the range of 0.1 second to 20 seconds, more preferably in the range of 0.5 second to 5 seconds, from the viewpoint of reliably joining the electrodes. If necessary, the semiconductor device may be released from the solder melting temperature before being released. Further, the duration of heat and pressure is preferably in the range of 30 seconds, more preferably in the range of 1 to 20 seconds, from the viewpoint of productivity.

Next, a process using an underfill insulating film for gang bonding process (NCF), which is an embodiment of the present invention, will be described with reference to FIG.
2A schematically illustrates a process of temporarily pressing the semiconductor chip onto the circuit board so that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line. FIG.
In addition, prior to step c), a) a step of sticking the underfill insulating film for gang bonding process on a wafer having soldered electrodes under vacuum, and b) individual gang bonding process of the wafer. The steps of dividing the semiconductor chip with the underfill insulating film for use are the steps of applying the underfill insulating film under vacuum on the wafer having the soldered electrodes, as described in the above-mentioned prior art method, and the individual wafers. It is the same process as the process of dividing | segmenting into a semiconductor chip with an underfill insulating film of this, and it differs only in the point that an underfill insulating film is for gang bonding processes.
In FIG. 2A, the left and center semiconductor chips (1), the circuit board (5), and the underfill insulating film (4) are pre-bonded, and the right semiconductor chip (1), circuit The substrate (5) and the underfill insulating film (4) are intended to be temporarily bonded. Mark recognition and alignment are performed in the same manner as in the prior art.
Although there are no particular limitations on the conditions for temporary pressure bonding, for example, the stage side is set to about 80 ° C. to 180 ° C. In the case of a resin substrate, about 60 to 100 ° C. is preferable in order to prevent warping. In the case where a silicon chip or silicon wafer is placed on the stage, the head material escapes to the stage side because the substrate material has good heat transfer, and the actual temperature of the chip is significantly lower than the head setting, so the stage temperature is increased. It is good to set to.
A ceramic heater similar to the prior art or an inexpensive constant heater can be used for the temporary crimping head. The temperature on the head side is preferably in the range of, for example, 100 ° C. to 180 ° C. in the initial stage of applying a load because the underfill insulating film makes the fluidity and brings the chip-side electrode and the substrate-side electrode into contact. The load varies depending on the chip size and bump layout, but is preferably about 10 to 500N. Although the time during which sufficient bump contact can be realized on the entire surface of the chip is different, it is preferable to adjust the time within a range of several seconds in consideration of productivity.
In addition, in the process shown to FIG. 2 (A), temporary pressure bonding is performed sequentially about the combination of a semiconductor chip (1), a circuit board (5), and an underfill insulating film (4).

Next, as shown in FIGS. 2B and 2C, a combination of the plurality of semiconductor chips (1), the circuit board (5), and the underfill insulating film (4) after the temporary pressure bonding is combined with the head for final pressure bonding. Using (8), heating and pressurizing are performed under temperature conditions where the maximum temperature is equal to or higher than the melting point temperature of the solder (3), and then the main pressure bonding is performed. Here, the plurality of temporarily press-bonded semiconductor chips (1) are simultaneously pressurized under a temperature condition that is equal to or higher than the melting point temperature of the solder.
There are no particular limitations on the conditions for the main pressure bonding, but for example, the stage side is set in the same manner as the temporary pressure bonding described above. An inexpensive constant heater can be used for the main pressure bonding head. There is often a difference between the set temperature of the main crimping head (8) and the actual bump temperature due to the heat escape to the stage. It is preferable to check the correspondence between the actual temperature and the set temperature on the chip.
The load varies depending on the chip size and bump layout, but is preferably about 10 to 500N. The duration at the solder melting temperature is preferably in the range of 0.5 to 30 seconds from the viewpoint of reliably joining the electrodes, and more preferably in the range of 1 to 20 seconds from the viewpoint of productivity. Particularly preferred is a range of 2 to 10 seconds. If necessary, the semiconductor device may be released from the solder melting temperature before being released.
In the embodiment shown in FIG. 2, the temporary press-bonding and the main press-bonding are performed using separate heads set at different temperatures suitable for the respective steps, so that the upper and lower head temperatures are reduced or eliminated. By saving the time required for the head temperature to rise and fall, the tact time can be greatly shortened and the productivity can be greatly improved. Further, since the main pressure bonding is simultaneously performed on a plurality of semiconductor chips, the productivity can be greatly improved in this respect. Furthermore, since high-precision positioning is not required in the main press bonding, the main press bonding can be performed with an inexpensive press device, and the cost can be greatly reduced.

  The semiconductor chip (1) on which the solder (3) -attached electrode (2a) is formed by the above-described process, the underfill insulating film for gang bonding process (4) of the present invention, and the counter electrode facing the solder-attached electrode The circuit board (5) on which (2b) is formed is a laminated body joined in this order, and at least a part, preferably all, of the electrode (2a) with solder (3) is the counter electrode. A laminate that is in electrical contact with at least a portion, preferably all of (2b) can be produced.

In the laminate, the electrode (2a) with solder (3) and the counter electrode (2a) and the counter electrode (2a) are electrically connected to the counter electrode (2b). 2b), it is preferable that there is no underfill insulating film (5) for the gang bonding process, whereby a sufficient bonding area between the electrode (2a) with solder (3) and the counter electrode (2b) Is ensured (the solder is sufficiently wetted and a solder joint is formed), and sufficient conduction is obtained.
Moreover, in the said laminated body, in the location where the said electrode (2a) with a solder (3) is electrically contacting with the said counter electrode (2b), it is in an underfill insulating film (5) for gang bonding processes. It is preferable that a through hole is formed, and thereby a sufficient bonding area between the electrode (2a) with solder (3) and the counter electrode (2b) is ensured (solder wetness is sufficient, solder bonding) Is formed) and sufficient conduction is obtained.

FIG. 3 is a schematic view showing a process using an underfill insulating film (NCF) for a gang bonding process, which is another embodiment of the present invention.
In the embodiment shown in FIG. 3, a memory chip (TSV chip) in which a large number of bumps are formed on both sides with a through silicon via (TSV) is stacked in the vertical direction (thickness direction).
FIG. 3A shows a temporary press-bonding step corresponding to FIG. 2A in the embodiment described above, and the lower one of the two TSV chips (9) shown in FIG. Similar to the left and center semiconductor chip (1) in (A), the upper one is pre-bonded, and the upper one is subjected to temporary bonding in the same manner as the right semiconductor chip (1) in FIG. It is something to try.
Next, as shown in FIGS. 3B and 3C, the semiconductor chip (1), the plurality of TSV chips (9), the circuit board (5), and the underfill insulating film (4) after provisional pressure bonding, Using the main press-bonding head (10), heat-pressing is performed under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder (3), thereby performing the main-pressure bonding. Here, the plurality of temporarily press-bonded TSV chips (9) are simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder.
The conditions of the temporary pressure bonding and the main pressure bonding in this embodiment are basically the same as those described above with reference to FIG. 2, but the thermal conductivity is reduced by stacking a plurality of chips in the vertical direction. Therefore, it is desirable to adjust the setting appropriately.

The laminated body of the above-described two embodiments is a circuit board on which a semiconductor chip is mounted, and can be used as a semiconductor device through further necessary processes. In the above laminate, the underfill insulating film for gang bonding process of the present invention after curing is filled between the semiconductor chip and the circuit board substantially without voids and voids, and has excellent performance as a semiconductor device. It is what has. That is, by using the underfill insulating film for a gang bonding process of the present invention, a semiconductor device having excellent performance can be manufactured with high productivity.
Such a semiconductor device can be suitably mounted on an electric / electronic device used for an information processing device, a display, a communication device, a transportation device, and the like.

EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited at all by this.

In the following examples / comparative examples, physical properties / characteristics were evaluated by the following methods.
(Melt viscosity)
It was determined by measuring the temperature dispersion of melt viscoelasticity using a rheometer (manufactured by Anton Paar, model number: MCR302). The measurement was carried out under the following conditions after using an underfill insulating film laminated to a thickness of 1.0 mm and adhering to a jig at 80 ° C. for 3 minutes in advance. After the first measurement was completed, the second measurement was performed again after the temperature was lowered to 60 ° C. over about 30 minutes.
Environment: Under nitrogen atmosphere Measuring jig: Parallel plate 8mmφ
Deformation mode: shear frequency: 1 Hz
Temperature increase rate: 10 ° C./min Temperature range: 60 to 160 ° C. (first time), 60 to 200 ° C. (second time)
(Crimping test)
Test chip (Global Net Co., Ltd., G03, bump diameter: 20 μm, bump pitch: 40 μm, bump height: 19 μm (copper pillar and tin / silver solder), size: 5 mm × 5 mm, daisy chain structure) Laminated product of underfill insulating film for gang bonding process (20 μm) / release PET film (Purex A54, 38 μm manufactured by Teijin DuPont Films Ltd.) so that the underfill insulating film for gang bonding process is on the test chip side Then, lamination was performed under vacuum using a vacuum laminator (manufactured by Takatori Co., Ltd.) (After reaching a degree of vacuum of 13 Pa, pressurizing at 80 ° C. for 1 minute). An unnecessary chip peripheral portion was removed from the obtained laminated product with a design knife, and then the release film was removed to obtain a chip with an insulating film for an under film.
Next, using the bonder (Shibuya Kogyo Co., Ltd., DB250), the chip with the insulating film for the under film is properly aligned with the test substrate (Global Net Co., Ltd., G03, silicon substrate). After that, the bonding was performed under the following conditions.
Stage temperature: 160 ° C
Temporary pressure bonding process Chip temperature: 160 ° C, load: 45N (4s)
Main crimping process Chip temperature: 260 ° C, load: 45N (10s)
The chip temperature was measured by preparing a jig in which a thermocouple was inserted between the chip / substrate separately and crimping under the same conditions.
Voids were evaluated by observing the obtained laminate of the chip / gang bonding process underfill insulating film / substrate from the chip side with an infrared microscope. The case where almost no void was generated was indicated by “◯”, and the case where void was remarkably generated was indicated by “x”. In addition, the case where the electrical connection was taken was designated as “J”, and the case where there was a poor conduction was designated as “X”.

[Example 1]
30 parts by mass of phenoxy resin (Mitsubishi Chemical Corporation, YX7200B35 (number average molecular weight of about 10,000, DSC glass transition temperature 149 ° C., epoxy equivalent 8000)), epoxy resin (DIC Corporation, N-695 (cresol novolak type, Softening point 90-100 ° C.), 30 parts by mass of a methyl ethyl ketone solution having a solid content of 70% prepared in advance, acrylate (manufactured by Nippon Kayaku Co., Ltd., KAYARAD R-130, 55-60% bisphenol A epoxy acrylate) , 40 to 45% mixture of acrylate monomers, average molecular weight (Mw) 500, polymerization inhibitor hydroquinone monomethyl ether (conventional name: methoquinone) 400 ppm) 40 parts by mass, epoxy curing agent (imidazole) (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2MAOK-PW (2 4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct)) 3 parts by mass, organic peroxide (Perhexa 25B (manufactured by NOF Corporation, 1 minute) Half-life temperature 180 ° C., molecular weight 290.45) 1 part by mass, flux (adipic acid) 1 part by mass, silica (OX50 (Nippon Aerosil Co., Ltd., hydrophilic fumed silica, BET specific surface area 50 m ² / g), average particle diameter About 0.05 μm)) 25 parts by mass, a polymerization inhibitor (TBQ (t-butylparabenzoquinone)) with respect to the thermal radical polymerizable substance (organic peroxide), 1000 ppm, and methyl ethyl ketone, solid content concentration 50 % Resin composition was applied to the peeled PET using an applicator and dried in an oven at 90 ° C. for 5 minutes. A plurality of fill insulating films were produced.
At least one of the obtained films was evaluated for melt viscosity η ^* ₁ at 120 ° C., melt viscosity η ^* ₂ at 140 ° C., and minimum melt viscosity η ^* ₃ at the first temperature rise, and the lowest melt The temperature giving viscosity was identified. After cooling to 60 ° C. over about 30 minutes, the melt viscosity η ^* ₄ at 150 ° C. was evaluated at the second temperature increase. Moreover, using the film produced on the same conditions, the crimping | compression-bonding test was done and the void and conduction | electrical_connection were evaluated. The results are shown in Table 1.

[Example 2]
30 parts by mass of phenoxy resin (Mitsubishi Chemical Corporation, 1256B40 (bisphenol A skeleton, number average molecular weight of about 10000, glass transition temperature by DSC 98 ° C., epoxy equivalent 7800)), epoxy resin (DIC Corporation, N-672- EXP (cresol novolac type, softening point 71-79 ° C.), 20 parts by mass of a methyl ethyl ketone solution having a solid content of 70% previously prepared, acrylate (manufactured by Nippon Kayaku Co., Ltd., KAYARAD R-130, bisphenol A epoxy) Mixture of acrylate 55-60%, acrylate monomer 40-45%, average molecular weight (Mw) 500, polymerization inhibitor hydroquinone monomethyl ether (common name: containing 500 ppm) 50 parts by mass, epoxy curing agent (imidazole) (Shikoku Chemicals) Made by Industrial Co., Ltd. 2 MAOK-PW (2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct)) 3 parts by mass, organic peroxide (manufactured by NOF Corporation) , Perhexa V (n-butyl-4,4-di (t-butylperoxy) valerate), 1 minute half-life temperature 173 ° C., molecular weight 334.46) 0.7 parts by mass, flux (adipic acid) 1 part by mass , 54 parts by mass of silica (Denka Co., Ltd., SFP-20M (ultrafine particle spherical type fused silica, d50: 0.3 μm)), a polymerization inhibitor (TBQ (t-butylparabenzoquinone)) The organic peroxide) was mixed with 800 ppm and methyl ethyl ketone to prepare a resin composition having a solid content concentration of 55%. This was applied to the peeled PET using an applicator and dried in an oven at 90 ° C. for 5 minutes to prepare a plurality of underfill insulating films having a thickness of 20 μm.
At least one of the obtained films was evaluated for melt viscosity η ^* ₁ at 120 ° C., melt viscosity η ^* ₂ at 140 ° C., and minimum melt viscosity η ^* ₃ at the first temperature rise, and the lowest melt The temperature giving viscosity was identified. After cooling, the melt viscosity η ^* ₄ at 150 ° C. was evaluated at the second temperature increase. Moreover, using the film produced on the same conditions, the crimping | compression-bonding test was done and the void and conduction | electrical_connection were evaluated. The results are shown in Table 1.

[Comparative Example 1]
As organic peroxide, instead of perhexa 25B, the same as in Example 1 except that 1 part by mass of perbutyl O (manufactured by NOF Corporation, 1 minute half-life temperature 134 ° C., molecular weight 216.32) was used. A plurality of underfill insulating films were prepared under the conditions and conditions described above, and the characteristics were evaluated. The results are shown in Table 1.

[Comparative Example 2]
30 parts by mass of phenoxy resin (Mitsubishi Chemical Co., Ltd., YX7200B35 (number average molecular weight of about 10,000, DSC glass transition temperature 149 ° C., epoxy equivalent 8000)), epoxy resin (Mitsubishi Chemical Corporation, YL983U (bisphenol F type epoxy) Resin, epoxy equivalents 165 to 175)) 35 parts by mass, epoxy resin (manufactured by DIC Corporation, HP4710 (naphthalene type, softening point 85 to 105 ° C., prepared in advance using a methyl ethyl ketone solution having a solid content of 70%) 35 parts by mass , Epoxy curing agent (imidazole) (manufactured by Shikoku Chemicals Co., Ltd., 2MAOK-PW (2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine isocyanuric acid adduct) ) 0.2 parts by mass, 1 part by mass of flux (adipic acid), and silica 25 parts by mass of EMIX300 (manufactured by Tatsumori Co., Ltd., silica fine particles, primary particle size 300 nm) and methyl ethyl ketone were blended to prepare a resin composition having a solid content concentration of 50%. It was applied to PET using an applicator and dried in an oven at 90 ° C. for 5 minutes to produce a plurality of underfill insulating films for a gang bonding process having a thickness of 20 μm.
At least one of the obtained films was evaluated for melt viscosity η ^* ₁ at 120 ° C., melt viscosity η ^* ₂ at 140 ° C., and minimum melt viscosity η ^* ₃ at the first temperature rise, and the lowest melt The temperature giving viscosity was identified. After cooling, the melt viscosity η ^* ₄ at 150 ° C. was evaluated at the second temperature increase. Moreover, using the film produced on the same conditions, the crimping | compression-bonding test was done and the void and conduction | electrical_connection were evaluated. The results are shown in Table 1.

In Examples 1 and 2, voids are suppressed and good conduction is obtained in both the temporary pressure bonding and the main pressure bonding, and the underfill insulating film of these Examples can be suitably used in the gang bonding process. It turned out to be a thing.
In Comparative Example 1, although voids could be suppressed, there was a surface that was not suitable for use in a gang bonding process, because conduction could not be ensured.
In Comparative Example 2, voids could not be suppressed, and electrical conduction could not be ensured by provisional pressure bonding, and the film was not suitable for use in a gang bonding process.

  The underfill insulating film for a gang bonding process of the present invention can effectively suppress problems such as poor conduction and generation of voids in a so-called gang bonding process having a temporary pressure bonding step and a main pressure bonding step. The semiconductor device having excellent performance, and its intermediate products and applied products can be manufactured with high productivity, and has a technical effect with high value in practical use. It has high applicability in the field of electrical and electronic industries including the manufacture of semiconductor devices.

1: Semiconductor chip 2a: Electrode 2b: Counter electrode 3: Solder 4: Underfill insulating film, underfill insulating film for gang bonding process 5: Circuit board 6: Head 7: Temporary pressure bonding head 8, 10: Main pressure bonding head 9: TSV chip

Claims (14)

In the measurement using the dynamic viscoelasticity measuring apparatus, the melt viscosity η ^* ₁ at 120 ° C. when the temperature is increased from 60 ° C. to 10 ° C./min is 2 × 10 ² to 2 × 10 ⁴ Pa · s. An underfill insulating film for a gang bonding process, having a melt viscosity η ^* ₂ at 140 ° C. of 3 × 10 ^{2 to} 3 × 10 ⁵ Pa · s. In the measurement using the dynamic viscoelasticity measuring apparatus, the minimum melt viscosity η ^* ₃ when the temperature is raised from 60 ° C. to 160 ° C. at 10 ° C./min is 2 × 10 ^{2 to} 5 × 10 ³ Pa · s. The underfill insulating film for a gang bonding process according to claim 1, wherein the temperature that gives the lowest melt viscosity is 100 ° C. to 140 ° C. In the measurement using the dynamic viscoelasticity measuring device, the temperature was raised from 60 ° C. to 160 ° C. at 10 ° C./min, once cooled to 60 ° C., and then heated again at 10 ° C./min. The underfill insulating film for a gang bonding process according to claim 1 or 2, wherein the melt viscosity η ^* ₄ at 1C is 1 x 10 ⁴ to 1 x 10 ⁸ Pa · s.   The underfill insulating film for a gang bonding process according to any one of claims 1 to 3, wherein the content of the conductive particles is 5% by mass or less.   The underfill insulating film for a gang bonding process according to any one of claims 1 to 4, comprising a thermal radical polymerizable substance and a thermal radical generator.   The underfill insulating film for a gang bonding process according to claim 5, wherein the one-minute half-life temperature of the thermal radical generator is 140 to 200 ° C. 6.   The underfill insulating film for a gang bonding process according to claim 5 or 6, comprising a quinone polymerization inhibitor.   The underfill insulating film for a gang bonding process according to claim 7, wherein a content (mass) of the polymerization inhibitor is 600 to 10,000 ppm with respect to an amount (mass) of the thermal radical polymerizable substance.   The underfill insulating film for a gang bonding process according to any one of claims 1 to 8, comprising an epoxy resin and a latent curing agent.   The latent curing agent is 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and 2,4-diamino-6- [2′-methylimidazolyl- ( 1 ')]-ethyl-s-triazine isocyanuric acid adduct, The underfill insulating film for a gang bonding process according to claim 9, which is at least one selected from adducts. The underfill insulating film for a gang bonding process according to any one of claims 1 to 10, wherein a semiconductor chip on which a soldered electrode is formed and a circuit board on which a counter electrode facing the soldered electrode is formed. A semiconductor device manufacturing method for joining via
a) attaching the underfill insulating film for gang bonding process on a wafer having a soldered electrode under vacuum;
b) dividing the wafer into individual gang bonding process semiconductor chips with an underfill insulating film;
c) temporarily bonding the semiconductor chip onto the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
d) A step of thermocompression bonding the temporarily-bonded semiconductor chip and the circuit board under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder mounted on the chip, And a thermocompression bonding step, which is a step in which the semiconductor chip is simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder. The underfill insulating film for a gang bonding process according to any one of claims 1 to 10, wherein a semiconductor chip on which a soldered electrode is formed and a circuit board on which a counter electrode facing the soldered electrode is formed. A semiconductor device manufacturing method for joining via
a ′) attaching the gang bonding process underfill insulating film on the circuit board;
c) temporarily bonding the semiconductor chip onto the circuit board such that the electrode of the semiconductor chip and the counter electrode of the circuit board are in contact with each other on a substantially center line;
d) A step of thermocompression bonding the temporarily-bonded semiconductor chip and the circuit board under a temperature condition in which the maximum temperature is equal to or higher than the melting point temperature of the solder mounted on the chip, And a thermocompression bonding step, which is a step in which the semiconductor chip is simultaneously heated to a temperature condition that is equal to or higher than the melting point temperature of the solder.   A semiconductor device manufactured by the method according to claim 11. An electric / electronic apparatus comprising the semiconductor device according to claim 13.