JP2018092015A - Polarization element, method for manufacturing polarization element, electro-optical device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wire-grid type polarization element that has an excellent sealing state, and a method for manufacturing the polarization element.SOLUTION: A polarization element 70A comprises: a substrate 71; a metal film 72 that is provided on the substrate 71 and has a plurality of slits 73; a first dielectric layer 75 that is laminated on the metal film 72 to seal the plurality of slits 73; and a second dielectric layer 76 that is laminated on the first dielectric layer 75 and has an optical axis inclined in a direction different from an inclination direction of an optical axis of the first dielectric layer 75.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a polarizing element, a manufacturing method of the polarizing element, an electro-optical device including the polarizing element, and an electronic apparatus.

  As a polarizing element used in an electro-optical device, for example, Patent Document 1 discloses a transparent substrate, a plurality of metal wires formed in parallel to each other on one surface of the transparent substrate, and a surface of the metal wire. A polarizer having a formed retardation functional film is disclosed. According to Patent Document 1, a wire grid polarizer with a phase difference function in which the optical axes of the phase difference plate and the polarizing plate coincide with each other with high accuracy can be provided. However, this polarizer has a problem that the polarization separation characteristic is deteriorated because a plurality of metal wires are filled with a retardation functional film.

  As a method for solving such a problem, for example, in Patent Document 2, a polarizing element unit formed on a base material and formed of a metal film having a plurality of slit-shaped openings, and a polarizing element unit is formed. A polarizing element having a space surrounded by the coating film, the base material, and the metal film, and a method for manufacturing the same. According to Patent Document 2, since the metal film is covered with the coating film in a state where a space is formed in the plurality of slit-shaped openings, excellent optical characteristics can be realized.

JP 2008-180875 A JP 2008-145573 A

  However, the coating film of Patent Document 2 may cause a phase difference with respect to incident light. Specifically, Patent Document 2 discloses a method of forming a coating film by depositing a silicon oxide film on a seed layer made of a silicon oxide film formed on a metal film using a sputtering method or the like. Has been. Therefore, when silicon oxide is used to form a coating film by sputtering, for example, from an oblique direction with respect to the seed layer, a phase difference occurs due to the film formation direction of the silicon oxide. When such a polarizing element is applied to, for example, a liquid crystal display device, there is a problem that optical characteristics such as contrast may be deteriorated due to the phase difference of the coating film.

  Patent Document 2 shows an example in which a coating film is formed when silicon oxide crystal grains grown upward from a seed layer on a metal film come into contact with each other to close a slit-shaped opening. Has been. Then, when stress such as heat is applied to the polarizing element, there is a problem that a crack is generated from a portion where the crystal grains are in contact, leading to damage to the polarizing element.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  [Application Example] A polarizing element according to this application example is laminated on the metal film so as to seal the base material, the metal film provided on the base material and having a plurality of slits, and the plurality of slits. A first dielectric layer, and a second dielectric layer stacked on the first dielectric layer and having an optical axis inclined in a direction different from the inclination direction of the optical axis of the first dielectric layer. .

  According to this application example, the phase difference caused by the inclination of the optical axis of the first dielectric layer can be reduced by the second dielectric layer. In addition, the inclination directions of the optical axes of the first dielectric layer and the second dielectric layer depend on the film forming directions when forming the respective dielectric layers. Since the tilt direction of the optical axis of the first dielectric layer and the tilt direction of the optical axis of the second dielectric layer are different, for example, each dielectric layer is formed as an aggregate of crystal grains of inorganic material. However, the arrangement of crystal grains differs between the first dielectric layer and the second dielectric layer, and cracks are less likely to occur due to stress such as heat. That is, it is possible to provide a polarizing element that is sealed by the first dielectric layer and the second dielectric layer and hardly causes a phase difference or a crack.

In the polarizing element according to the application example described above, the optical axis of the first dielectric layer is inclined in the first direction on the metal film in a direction intersecting the extending direction of the slit, and the first It is preferable that the optical axis of the two dielectric layers is inclined in a second direction opposite to the first direction on the first dielectric layer.
According to this configuration, the phase difference caused by the inclination of the optical axis of the first dielectric layer can be canceled by the second dielectric layer.

The polarizing element according to the application example, wherein the third dielectric layer is stacked on the second dielectric layer and has an optical axis inclined in the first direction or a third direction orthogonal to the second direction. And a fourth dielectric layer stacked on the third dielectric layer and having an optical axis inclined in a fourth direction opposite to the third direction.
According to this configuration, even if the third dielectric layer and the fourth dielectric layer are stacked on the second dielectric layer, the phase difference caused by the inclination of the optical axis of the third dielectric layer is not reduced. Can be countered. Further, since the tilt direction of the optical axis of the third dielectric layer is orthogonal to the tilt direction of the optical axis of the first dielectric layer or the second dielectric layer, the first to fourth stacked layers are used. When the dielectric layer is viewed from the normal direction of the substrate surface, the optical anisotropy is eliminated and the dielectric layer becomes isotropic. In addition, since the metal film is protected by the four laminated dielectric layers, a polarizing element with improved durability can be provided.

In the polarizing element according to the application example described above, the optical axis of the first dielectric layer is inclined in the first direction on the metal film in a direction intersecting the extending direction of the slit, and the first The optical axis of the two dielectric layers is inclined in a second direction orthogonal to the first direction on the first dielectric layer, and is laminated on the second dielectric layer, and the first direction or the A third dielectric layer having an optical axis inclined in a third direction opposite to the second direction, and laminated on the third dielectric layer, opposite to the first direction or the second direction. And a fourth dielectric layer having an optical axis inclined in a fourth direction orthogonal to the third direction.
According to this configuration, the phase difference caused by the inclination of one optical axis of the first dielectric layer and the second dielectric layer is canceled by the third dielectric layer, and the position caused by the inclination of the other optical axis. The phase difference can be canceled out by the fourth dielectric layer. In addition, since the optical axes of the first dielectric layer and the second dielectric layer that overlap vertically and the third dielectric layer and the fourth dielectric layer are orthogonal to each other, the first to fourth dielectric layers are stacked. Optical anisotropy is eliminated when the layer is viewed from the normal direction of the substrate surface. In addition, since the metal film is protected by the four laminated dielectric layers, a polarizing element with improved durability can be provided.

The polarizing element described in the application example described above preferably further includes a dielectric layer having an optical axis in a normal direction of the base material above the first dielectric layer.
According to this configuration, at least the first dielectric layer and the second dielectric layer can be counteracted by the dielectric layer to which the thickness direction retardation is added. In addition, since the metal film is protected by the laminated at least three dielectric layers, a polarizing element with further improved durability can be provided.

[Application Example] An electro-optical device according to this application example includes the polarizing element described in the application example.
According to this application example, since the polarizing element that hardly causes a phase difference or a crack is provided, an electro-optical device having both excellent optical characteristics and high durability quality can be provided.

[Application Example] An electronic apparatus according to this application example includes the electro-optical device according to the application example described above.
According to this application example, since the electro-optical device having the polarizing element that hardly causes the phase difference and the crack is provided, it is possible to provide an electronic apparatus having both excellent optical characteristics and high durability quality.

  [Application Example] A method of manufacturing a polarizing element according to this application example includes a step of forming a plurality of slits in a metal film formed on a substrate, and a direction in which the slits extend by a vapor deposition method. The inorganic material is obliquely deposited from the intersecting first direction to form the first dielectric layer, and the inorganic material is deposited from the second direction opposite to the first direction by a vapor deposition method. And forming a second dielectric layer by laminating it obliquely and stacking on the first dielectric layer.

  According to this application example, the first dielectric layer is formed by obliquely depositing the inorganic material from the first direction intersecting with the extending direction of the slits by the vapor deposition method. The metal film can be sealed without being filled with one dielectric layer. In addition, the film formation direction when forming each of the first dielectric layer and the second dielectric layer is the inclination direction of the optical axis of the first dielectric layer and the second dielectric layer. Accordingly, since the tilt direction of the optical axis of the first dielectric layer is opposite to the tilt direction of the optical axis of the second dielectric layer, the phase difference caused by the tilt of the optical axis of the first dielectric layer is reduced. It can be canceled out with two dielectric layers. In addition, even when each dielectric layer is formed as an aggregate of inorganic materials such as crystal grains, the arrangement of the crystal grains differs between the first dielectric layer and the second dielectric layer, Cracks are less likely to occur due to stress such as. That is, it is possible to manufacture a polarizing element that is sealed by the first dielectric layer and the second dielectric layer and hardly causes retardation or cracks.

In the method for manufacturing a polarizing element according to the application example described above, the inorganic material is obliquely deposited from the first direction or the third direction orthogonal to the second direction by a vapor deposition method. The inorganic material is obliquely deposited from a fourth direction opposite to the third direction by a step of forming a third dielectric layer by laminating two dielectric layers and a vapor deposition method, And a step of forming a fourth dielectric layer by stacking on the three dielectric layers.
According to this method, since the inclination direction of the optical axis of the third dielectric layer in the film forming direction is opposite to the inclination direction of the optical axis of the fourth dielectric layer, the optical axis of the third dielectric layer is The phase difference caused by the inclination can be canceled by the fourth dielectric layer. In addition, since the tilt direction of the optical axis of the first dielectric layer or the second dielectric layer and the tilt direction of the optical axis of the third dielectric layer are orthogonal, the first to fourth dielectric layers stacked. A polarizing element in which optical anisotropy is eliminated when the layer is viewed from the normal direction of the substrate surface can be produced. In other words, the first to fourth dielectric layers are sequentially formed on a metal film having a plurality of slits, and a polarizing element that is less likely to cause phase difference and cracks and has improved durability quality can be manufactured.

[Application Example] Another method of manufacturing a polarizing element according to this application example is the extension of the slit by a step of forming a plurality of slits in a metal film formed on a substrate and a vapor deposition method. Forming the first dielectric layer by obliquely depositing an inorganic material from a first direction intersecting the direction, and forming the first dielectric layer from a second direction orthogonal to the first direction by a vapor deposition method. The step of depositing material obliquely and laminating the first dielectric layer to form the second dielectric layer and the first direction or the second direction opposite to the second direction by a vapor deposition method The inorganic material is obliquely deposited from the three directions and laminated on the second dielectric layer to form the third dielectric layer, and the first direction or the second by the vapor deposition method. And depositing the inorganic material obliquely from a fourth direction orthogonal to the third direction, Forming a fourth dielectric layer laminated on the serial third dielectric layer, comprising a.
According to this method, the tilt direction of one optical axis of the first dielectric layer and the second dielectric layer in the film forming direction is opposite to the tilt direction of the optical axis of the third dielectric layer. The tilt direction of the other optical axis of the dielectric layer and the second dielectric layer is opposite to the tilt direction of the optical axis of the fourth dielectric layer. In addition, since the inclination directions of the optical axes of the first dielectric layer and the second dielectric layer are orthogonal to each other, and the inclination directions of the optical axes of the third dielectric layer and the fourth dielectric layer are orthogonal to each other, The optical anisotropy when the laminated first to fourth dielectric layers are viewed from the normal direction of the substrate surface is eliminated. Accordingly, it is possible to manufacture a polarizing element in which the phase difference is canceled out even if the first to fourth dielectric layers are stacked. In other words, the first to fourth dielectric layers are sequentially formed on a metal film having a plurality of slits, and a polarizing element that is less likely to cause phase difference and cracks and has improved durability quality can be manufactured.

In the polarizing element manufacturing method according to the application example described above, the inorganic material is deposited from the normal direction of the base material by a vapor deposition method, and a dielectric layer is formed above the first dielectric layer. It is preferable to further include a process. Note that the formation of the dielectric layer above the first dielectric layer is not limited to the case where the dielectric layer is formed in contact with the first dielectric layer but above the first dielectric layer. This includes the case where the dielectric layer is formed via the dielectric layer.
According to this method, at least the first dielectric layer and the second dielectric layer can be counteracted by the dielectric layer additionally formed in the thickness direction retardation. In addition, since the metal film is protected by the laminated at least three dielectric layers, a polarizing element with further improved durability can be manufactured.

The schematic perspective view which shows the structure of the polarizing element of 1st Embodiment. Schematic which shows the structure of the polarizing element of 1st Embodiment, and the optical structure of a sealing layer. FIG. 3 is a schematic cross-sectional view showing the method for manufacturing the polarizing element of the first embodiment. Schematic which shows the method of measuring the light transmittance in a polarizing element. Schematic which shows the method of measuring the reflectance of the light in a polarizing element. The schematic perspective view which shows the structure of the polarizing element of 2nd Embodiment. Schematic which shows the structure of the polarizing element of 2nd Embodiment, and the optical structure of a sealing layer. Schematic which shows the structure of the polarizing element of 3rd Embodiment, and the optical structure of a sealing layer. Schematic which shows the structure of the polarizing element of 3rd Embodiment, and the optical structure of a sealing layer. The schematic perspective view which shows the structure of the polarizing element of 4th Embodiment. Schematic which shows the structure of the polarizing element of 4th Embodiment, and the optical structure of a sealing layer. FIG. 3 is a schematic diagram illustrating a configuration of a three-plate transmissive liquid crystal projector that is an example of a projection display device as an electronic apparatus. FIG. 3 is a schematic cross-sectional view showing a configuration of a liquid crystal device as light modulation means. Schematic which shows the structure of the 3 type | mold reflection type liquid crystal projector which is an example of the other projection type display apparatus as an electronic device. FIG. 3 is a schematic cross-sectional view showing a configuration of a reflective liquid crystal device as light modulating means. Schematic which shows the structure of the polarizing element of a modification, and the optical structure of a sealing layer.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

(First embodiment)
<Polarizing element>
The polarizing element of 1st Embodiment is demonstrated with reference to FIG.1 and FIG.2. FIG. 1 is a schematic perspective view showing the configuration of the polarizing element of the first embodiment, and FIG. 2 is a schematic view showing the structure of the polarizing element of the first embodiment and the optical structure of the sealing layer.

  As shown in FIG. 1, the polarizing element 70 </ b> A of the present embodiment is provided on a translucent base material 71, a metal film 72 provided on one surface side of the base material 71, and the metal film 72. And a light-transmitting sealing layer 74. The metal film 72 is provided with a plurality of slits 73.

  The base material 71 is a transparent substrate such as quartz or non-alkali glass, and the thickness can be arbitrarily set.

  The metal film 72 is made of, for example, a metal having light reflectivity such as aluminum, and is patterned by using, for example, a photolithography method to form a plurality of slits 73. In the present embodiment, the metal film 72 is patterned so that a frame portion remains along the outer shape of the base material 71 around the plurality of slits 73. Note that the metal film 72 may be patterned so that the frame portion does not exist. In other words, the metal film 72 may be patterned in a state where both ends in the extending direction of the slit 73 are open.

  The plurality of slits 73 are provided at regular intervals in a certain direction, and the arrangement interval is, for example, 200 nm (nanometer) or less, which is shorter than the visible light wavelength. The thickness of the metal film 72 is almost the same as the arrangement interval of the slits 73. Therefore, in practice, it is difficult to visually confirm the slit 73, and in FIG. 1, the slit 73 is enlarged and displayed so as to be visible.

  The sealing layer 74 seals the metal film 72 provided with a plurality of slits 73, and is formed by laminating a first dielectric layer 75 and a second dielectric layer 76 in this order.

The first dielectric layer 75 and the second dielectric layer 76 are formed using an inorganic material having low moisture permeability so that the sealing layer 74 after lamination has translucency. Examples of such inorganic materials include silicon oxide (SiOx), aluminum oxide (AlOx), tantalum oxide (TaOx), hafnium oxide (HfOx), silicon nitride (SiNx), and magnesium fluoride (MgF ₂ ). .

  Such a polarizing element 70A is called a wire grid type, and transmits light (polarized light) that is a wave oscillating in the extending direction of the slit 73 out of the light incident from the base 71 or the sealing layer 74 side. Some are absorbed and others are reflected. On the other hand, light (polarized light) that is a wave oscillating in a direction orthogonal to the extending direction of the slit 73 is transmitted.

  Hereinafter, the direction orthogonal to the extending direction of the slit 73 is defined as the X direction, the extending direction of the slit 73 is defined as the Y direction, and the base of the base material 71 provided with the metal film 72 is orthogonal to the X direction and the Y direction. The normal direction of the material surface will be described as the Z direction. Further, viewing from above along the Z direction is referred to as “plan view”. Furthermore, the direction in plan view is represented by the time of the clock. For example, the direction toward 3 o'clock in the X direction is referred to as the 3 o'clock direction, and the opposite direction is referred to as the 9 o'clock direction. Similarly, the direction toward 12:00 in the Y direction is referred to as the 12 o'clock direction, and the opposite direction is referred to as the 6 o'clock direction.

  As shown in FIG. 2, the metal film 72 provided on the base material 71 has a plurality of metal wires 72a arranged at equal intervals to form slits 73 between the metal wires 72a. The metal film 72 is sealed with a sealing layer 74 while maintaining the spaces of the plurality of slits 73.

  The sealing layer 74 is formed by laminating a first dielectric layer 75 and a second dielectric layer 76, both of which have an optical refractive index n nx> ny due to anisotropy related to film formation. It can be expressed as a refractive index ellipsoid satisfying the relationship of> nz. The optical axis of the refractive index ellipsoid in this case is the axis of nx having the largest refractive index n, and is the same as the film forming direction of the dielectric layer described later. The optical axis of the first dielectric layer 75 is inclined in the 3 o'clock direction at a predetermined angle θ with respect to the base material surface of the base material 71 on which the metal film 72 is formed (a state where the optical axis is lowered in the 3 o'clock direction) ) In contrast, the optical axis of the second dielectric layer 76 is inclined in the 9 o'clock direction at a predetermined angle θ with respect to the base material surface of the base material 71 on which the metal film 72 is similarly formed (9 o'clock). It ’s in a downward direction). That is, the tilt direction of the optical axis of the first dielectric layer 75 is different from the tilt direction of the optical axis of the second dielectric layer 76, and the second tilt direction of the optical axis of the first dielectric layer 75 is the second. The optical axis of the dielectric layer 76 is inclined in the opposite direction in the X direction. Note that the film forming direction of the dielectric layer includes not only the film forming angle with respect to the substrate surface but also the film forming direction.

  According to such an optical arrangement of the first dielectric layer 75 and the second dielectric layer 76, when viewed from directly above in the Z direction with respect to the base material 71, the sealing layer 74 has nx> ny. A refractive index ellipsoid satisfying the above relationship. That is, the phase difference caused by the inclination of the optical axis of the first dielectric layer 75 whose optical axis is inclined in the 3 o'clock direction is the inclination of the optical axis of the second dielectric layer 76 whose optical axis is inclined in the 9 o'clock direction. It will be canceled by the resulting phase difference.

<Manufacturing method of polarizing element>
Next, a manufacturing method of the polarizing element 70A of the present embodiment will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view showing the method for manufacturing the polarizing element of the first embodiment.

  The manufacturing method of the polarizing element 70A of the present embodiment includes a first step of forming a metal film 72 on the substrate 71, a second step of forming a plurality of slits 73 in the formed metal film 72, The third step of forming the first dielectric layer 75 by obliquely depositing the inorganic material from the first direction intersecting the extending direction of the slit 73 by the phase film formation method, and the vapor phase film formation method, A fourth step in which an inorganic material is obliquely deposited from a second direction opposite to the first direction and is stacked on the first dielectric layer 75 to form the second dielectric layer 76.

  In the manufacturing method of the polarizing element 70A of the present embodiment, an example of the extending direction of the slit 73 is the Y direction as described above. In addition, an example of the first direction intersecting with the extending direction of the slit 73 is the 3 o'clock direction as shown by an arrow in FIG. 3, and an example of the second direction opposite to the first direction is the same as FIG. As shown by the arrow in FIG.

  In the first step, an aluminum film having a predetermined thickness is formed on one surface of the base 71 by a sputtering method using aluminum as a target, for example, as a vapor phase film forming method to form a metal film 72. Then, the process proceeds to the second step.

  In the second step, the metal film 72 made of an aluminum film is patterned to form a plurality of slits 73. As a patterning method of the aluminum film, it is preferable to use dry etching in which the edge in the cross section of the metal line 72a formed after patterning becomes clearer than wet etching.

  As shown in FIG. 3, the value obtained by adding the line width L of the metal lines 72a and the space (that is, the width of the slit 73) S between the metal lines 72a in the X direction is the arrangement pitch P of the metal lines 72a. . The arrangement pitch of the slits 73 is also P. The height h of the metal wire 72a on the substrate 71 is substantially the same as the arrangement pitch P. In the present embodiment, the metal film 72 and the slit 73 are formed by setting the width L and the space S to 70 nm (nanometer), for example. The arrangement pitch P of the metal wires 72a is preferably 200 nm or less, and preferably in the range of 70 nm to 150 nm in consideration of the formation accuracy of the slits 73 and the polarization separation characteristics of the polarizing element 70A described later. More preferred. Then, the process proceeds to the third step.

In the third step, the first dielectric layer 75 is deposited by obliquely depositing silicon oxide (SiOx), which is an inorganic material, from 3 o'clock, for example, by sputtering using silicon oxide (SiOx) as a target as a vapor deposition method. Form. Specifically, as shown in FIG. 3, in the initial stage of depositing the inorganic material obliquely from the 3 o'clock direction, the space of the slit 73 between the adjacent metal wires 72a has not been closed yet. When the inorganic material is obliquely deposited on the top of the metal wire 72a and reaches a certain thickness d ₀ , the space of the slit 73 is closed by the deposited inorganic material. Subsequently, the first dielectric layer 75 having a flat surface is formed by depositing the inorganic material obliquely and depositing the inorganic material up to the film thickness d ₁ . That is, the first dielectric layer 75 is obtained by depositing a second layer 75b having a thickness d ₁ in a first layer 75a of thickness d _0. Accordingly, the film thickness of the first dielectric layer 75 is a value obtained by adding d ₁ to d ₀ . And it progresses to a 4th process.

In the fourth step, the first dielectric layer 75 is deposited by obliquely depositing silicon oxide (SiOx), which is an inorganic material, from 9 o'clock, for example, by sputtering using silicon oxide (SiOx) as a target as a vapor deposition method. A second dielectric layer 76 is formed thereon. Since the inorganic material is deposited on the surface of the first dielectric layer 75, the surface of the second dielectric layer 76 is also flat. The thickness of the second dielectric layer 76 is d _2.

As described above, the first layer 75a of the first dielectric layer 75 includes the inorganic material deposited in the oblique direction and the space formed above the slit 73, and thus is laminated on the first layer 75a. If the refractive index of the second layer 75b is n ₁ , the refractive index n ₀ of the first layer 75a is derived by the following formula (1).
n ₀ = a × n ₁ (1)
a is a coefficient of less than 1.

Since the first dielectric layer 75 and the second dielectric layer 76 are formed using the same inorganic material, the refractive index n ₁ of the second layer 75b of the first dielectric layer 75 and the second dielectric The refractive index n ₂ of the layer 76 has the same value as shown in the following formula (2).
n ₁ = n ₂ (2)

The film thickness d ₀ of the first layer 75 a of the first dielectric layer 75 is considered to depend on the width of the slit 73, that is, the space S. Although depending on the angle of film formation with respect to the substrate surface when forming the first layer 75a by depositing the inorganic material obliquely, it can be considered that d ₀ ≈S. Then, the arrangement pitch P of the metal wire 72a, since the sum of the line width L and the space S of the metal wire 72a, L: S = 1: film thickness d ₀ of the first layer 75a of the case 1 is below It can be derived from equation (3).
d ₀ = P / 2 (3)

The value of the front phase difference of each dielectric layer can be given by the product of the refractive index and the film thickness of the dielectric layer. As described above, when the phase difference caused by the inclination of the optical axis of the first dielectric layer 75 is to be canceled by the second dielectric layer 76, the value of the front phase difference of the first dielectric layer 75 and The value of the front phase difference of the second dielectric layer 76 is made the same. Therefore, the relationship between the value of the front phase difference of the first dielectric layer 75 and the value of the front phase difference of the second dielectric layer 76 can be derived by the following equation (4).
n ₂ × d ₂ = n ₀ × d ₀ + n ₁ × d ₁ (4)

When the above formulas (1) to (3) are applied to the above formula (4), the following formula (5) is derived.
d ₂ = d ₁ + a × P / 2 (5)

Here, for example, if a = 0.8 and P = 140 nm, a × P / 2 = 56 nm. Therefore, for example, when d ₁ = 100 nm, d ₂ = 156 nm. The first dielectric layer 75, when viewed as d ₀ ≒ S, a d ₀ + d ₁ = 170nm, the total thickness of the sealing layer 74 and the second dielectric layer 76 in addition to the first dielectric layer 75 170 nm + 156 nm = 326 nm. The total film thickness of the sealing layer 74 is determined in consideration of the optical characteristics and durability quality (heat resistance, moisture resistance) of the polarizing element 70A.

  Note that the vapor deposition method is not limited to the sputtering method, and a vacuum deposition method may be used. By using the vapor phase film forming method, the above-described inorganic material is deposited in an oblique direction, whereby each of the dielectric layers is formed. Then, as shown in FIG. 3, in the first layer 75a of the first dielectric layer 75, in the portion where the slit 73 is closed by, for example, crystal grains of the inorganic material deposited on the adjacent metal line 72a, the crystal grains are An abutting boundary occurs. By depositing an inorganic material on the first layer 75a to form the second layer 75b and further forming the second dielectric layer 76 by changing the film formation direction, the boundary becomes inconspicuous. For example, in a state where the metal film 72 is sealed only by the first dielectric layer 75, if stress such as heat is applied, cracks may occur from the boundary. If a crack occurs, it will lead to breakage of the polarizing element. In addition, if moisture or oxygen enters from the cracks and the metal film 72 is altered, the optical characteristics of the polarizing element may be affected. In the present embodiment, since the second dielectric layer 76 is formed by depositing an inorganic material obliquely from different film formation directions with respect to the first dielectric layer 75, the occurrence of such cracks can be reduced.

  Next, a method for measuring the optical characteristics of the polarizing element 70A will be described with reference to FIGS. FIG. 4 is a schematic diagram showing a method for measuring the light transmittance of the polarizing element, and FIG. 5 is a schematic diagram showing a method for measuring the light reflectance of the polarizing element.

  In light incident on the polarizing element 70A, light that is a wave oscillating in the extending direction of the slit 73 is represented as S wave, its transmittance is represented as Ts, and its reflectance is represented as Rs. In addition, light that is a wave oscillating in a direction orthogonal to the extending direction of the slit 73 is P wave, the transmittance is Tp, and the reflectance is Rp. Then, since the polarizing element 70A transmits the P wave better than the S wave, the transmittance relationship is Tp >> Ts. Since the reflectance relationship is opposite to the transmittance relationship, Rs >> Rp. In the present embodiment, a plurality of slits 73 are formed by forming and patterning the metal film 72 so that Tp is 90% or more, preferably 92% or more.

  For example, if Tp is 90% and Ts is 0.05%, the ratio of Tp / Ts is 1800. The value of Tp / Ts is called a polarization separation characteristic, and becomes one of the factors that define the contrast in the liquid crystal device when the polarizing element 70A is used in a liquid crystal device, for example. That is, the transmittances Tp and Ts, the reflectances Rp and Rs, and the polarization separation characteristics indicate the optical characteristics of the polarizing element 70A.

  As shown in FIG. 4, the transmittance measurement system includes a polarization conversion element 81 that converts a light beam from a light source into linearly polarized light that is a wave that vibrates in a predetermined direction, and linearly polarized light that is converted by the polarization conversion element 81. And a measuring system including an integrating sphere 82 that receives the light and measures the intensity thereof. The polarization conversion element 81 may be, for example, a crystal type Grand Taylor polarizer that converts incident random polarized light into linearly polarized light that vibrates in a certain direction. The polarization conversion element 81 can rotate around the optical axis of the light beam, and can change the incident random polarized light into a P wave and an S wave by changing the rotation angle. The size of the randomly polarized light beam incident on the polarization conversion element 81 is, for example, φ5 mm.

  First, a light beam is converted into a P wave by the polarization conversion element 81 and received by the integration sphere 82 in a state where the measurement target polarization element W is not disposed on the optical axis between the polarization conversion element 81 and the integration sphere 82. The intensity is set to “1” as a reference. Next, the polarization element W to be measured is arranged on the optical axis between the polarization conversion element 81 and the integrating sphere 82 so that the extending direction of the slit 73 is horizontal, for example, as shown in FIG. The P wave transmitted through the polarizing element W is received by the integrating sphere 82 and the intensity thereof is measured. By taking a ratio with the intensity measured previously, the P wave transmittance Tp (%) can be obtained.

  Similarly, in a state where the polarization element W to be measured is not disposed on the optical axis between the polarization conversion element 81 and the integrating sphere 82, this time, the polarization conversion element 81 is rotated 90 degrees to change the luminous flux into an S wave. The converted light is received by the integrating sphere 82, and its intensity is set to the reference “1”. Next, on the optical axis between the polarization conversion element 81 and the integrating sphere 82, for example, the polarization element W to be measured is arranged so that the extending direction of the slit 73 is horizontal, and the polarization element W is transmitted. The S wave is received by the integrating sphere 82 and its intensity is measured. The S wave transmittance Ts (%) can be obtained by taking a ratio with the intensity of the transmitted light previously measured.

  As shown in FIG. 5, the reflectance measurement system includes a polarization conversion element 81, an integrating sphere 82, and a pair of mirrors 83 that are disposed on the optical axis of the light beam so as to be inclined in opposite directions at a predetermined angle. And a measurement system comprising: The polarization element W to be measured is arranged so that linearly polarized light reflected by one of the pair of mirrors 83 enters. Specifically, the linearly polarized light incident on one of the pair of mirrors 83 is reflected and is incident on the polarizing element W at an angle of 5 degrees with respect to the normal line of the polarizing element W. The polarizing element W is disposed so as to face the pair of mirrors 83 so that the linearly polarized light reflected by the light enters the other mirror 83 at an angle of 5 degrees with respect to the normal line.

  First, a total reflection mirror is arranged at a position where the polarizing element W is arranged, and linearly polarized light (P wave or S wave) converted by the polarization conversion element 81 is incident on the total reflection mirror, and the intensity of the reflected light is changed. Measured with the integrating sphere 82 and set to the reference “1”. Next, as shown in FIG. 5, for example, the polarization element W to be measured is arranged so that the extending direction of the slit 73 is orthogonal to the optical axis of linearly polarized light (P wave or S wave) incident on the mirror 83. The linearly polarized light (P wave or S wave) is incident, the reflected light is received by the integrating sphere 82, and the intensity thereof is measured. One of the reflectance Rp of the P wave and the reflectance Rs of the S wave can be obtained by taking a ratio with the intensity of the reflected light previously measured. Subsequently, the polarizing element W to be measured is rotated 90 degrees in the plane, the linearly polarized light (P wave or S wave) is made incident, the reflected light is received by the integrating sphere 82, and the intensity is measured. . The other of the reflectance Rp (%) of the P wave and the reflectance Rs (%) of the S wave can be obtained by taking the ratio with the intensity of the reflected light previously measured.

According to the polarizing element 70A of the first embodiment and the manufacturing method thereof, the following effects can be obtained.
(1) The first dielectric layer 75 is formed by obliquely depositing an inorganic material by a vapor deposition method from the three o'clock direction perpendicular to the direction in which the plurality of slits 73 extend with respect to the metal film 72, and The second dielectric layer 76 is formed by obliquely depositing an inorganic material on the first dielectric layer 75 from the 9 o'clock direction by a vapor deposition method. Since the first dielectric layer 75 has an optical axis inclined in the 3 o'clock direction of the film formation direction, and the second dielectric layer 76 has an optical axis inclined in the 9 o'clock direction of the film formation direction, The inclination direction of the optical axis of the body layer 76 is opposite to the inclination direction of the optical axis of the first dielectric layer 75. Therefore, the phase difference resulting from the inclination of the optical axis of the first dielectric layer 75 can be canceled by the second dielectric layer 76. That is, it is possible to provide or manufacture the wire grid type polarizing element 70 </ b> A sealed with the sealing layer 74 that hardly causes a phase difference.

  (2) The first dielectric layer 75 closes the slit 73 by depositing an inorganic material obliquely by a vapor deposition method. Therefore, a boundary relating to film formation occurs at a portion of the first dielectric layer 75 that closes the slit 73. In the present embodiment, the second dielectric layer 76 is formed on the first dielectric layer 75 from the opposite direction to the first dielectric layer 75, so that even if stress such as heat is applied, the second dielectric layer 76 is formed. Cracks are unlikely to occur at the boundary. That is, it is possible to provide or manufacture a polarizing element 70A that is unlikely to be cracked by stress such as heat and has excellent durability quality (heat resistance and moisture resistance).

  The film formation direction of the first dielectric layer 75 is not limited to the 3 o'clock direction, and may be the 9 o'clock direction. In that case, the deposition direction of the second dielectric layer 76 is the opposite 3 o'clock direction.

(Second Embodiment)
Next, the polarizing element of 2nd Embodiment and its manufacturing method are demonstrated with reference to FIG.6 and FIG.7. FIG. 6 is a schematic perspective view showing the configuration of the polarizing element of the second embodiment, and FIG. 7 is a schematic view showing the structure of the polarizing element of the second embodiment and the optical structure of the sealing layer. In the polarizing element of the second embodiment, the configuration of the sealing layer 74 is different from the polarizing element 70A of the first embodiment. Therefore, the same components as those of the polarizing element 70A of the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 6, the polarizing element 70 </ b> B of the present embodiment is provided on the translucent base material 71, the metal film 72 provided on one surface side of the base material 71, and the metal film 72. And a light-transmitting sealing layer 74B. The metal film 72 is provided with a plurality of slits 73. The slit 73 extends in the Y direction. Similar to the polarizing element 70A of the first embodiment, the metal wires 72a and the slits 73 are arranged at equal intervals in the X direction.

  The sealing layer 74B is formed by laminating a first dielectric layer 75, a second dielectric layer 76, a third dielectric layer 77, and a fourth dielectric layer 78 in this order. Each dielectric layer is formed by depositing the same inorganic material from an oblique direction with respect to the substrate surface (metal film 72) by a vapor deposition method. That is, the sealing layer 74B in the polarizing element 70B of the present embodiment further includes the third dielectric layer 77 and the fourth dielectric layer 78 with respect to the sealing layer 74 of the polarizing element 70A of the first embodiment. Laminated.

  As shown in FIG. 7, the sealing layer 74B that seals the metal film 72 includes a first dielectric layer 75, a second dielectric layer 76, a third dielectric layer 77, and a fourth dielectric, which are sequentially stacked. Each of the dielectric layers can be expressed as a refractive index ellipsoid satisfying the relationship of nx> ny> nz optically due to anisotropy related to film formation. As described in the first embodiment, the tilt direction of the optical axis of the first dielectric layer 75 is, for example, 3 o'clock, and the tilt direction of the optical axis of the second dielectric layer 76 is opposite to the 3 o'clock direction. It is the 9 o'clock direction. On the other hand, the optical axis of the third dielectric layer 77 is, for example, relative to the substrate surface on which the metal film 72 is formed in the Y direction perpendicular to the 3 o'clock direction or the 9 o'clock direction (in other words, the X direction). It is inclined at a predetermined angle θ in the 12 o'clock direction (it is in a state of being lowered in the 12 o'clock direction at a predetermined angle θ). The optical axis of the fourth dielectric layer 78 is inclined at a predetermined angle θ in the 6 o'clock direction opposite to the inclination direction of the optical axis of the third dielectric layer 77 (lowers in the 6 o'clock direction at the predetermined angle θ). It is in the state. That is, as described in the first embodiment, the phase difference caused by the inclination of the optical axis of the first dielectric layer 75 can be adjusted by appropriately adjusting the film thickness of each dielectric layer. The phase difference caused by the inclination of the optical axis of the third dielectric layer 77 can also be canceled by the fourth dielectric layer 78.

  According to such an optical arrangement of the first dielectric layer 75, the second dielectric layer 76, the third dielectric layer 77, and the fourth dielectric layer 78, the optical axis of the second dielectric layer 76 is inclined. Since the direction of inclination of the optical axis of the third dielectric layer 77 is orthogonal to the direction, the sealing layer 74B has a relationship of nx = ny> when viewed from directly above the Z direction with respect to the base material 71. A refractive index ellipsoid satisfying the nz relationship is obtained. Therefore, the optical anisotropy (nx> ny) due to the inclination of the optical axis of each dielectric layer is eliminated, and the sealing layer 74B becomes optically isotropic in plan view.

  The manufacturing method of the polarizing element 70B of the present embodiment includes a first step of forming a metal film 72 on the substrate 71, a second step of forming a plurality of slits 73 in the formed metal film 72, The third step of forming the first dielectric layer 75 by obliquely depositing the inorganic material from the first direction intersecting the extending direction of the slit 73 by the phase film formation method, and the vapor phase film formation method, And a fourth step in which an inorganic material is obliquely deposited from a second direction opposite to the first direction and is stacked on the first dielectric layer 75 to form the second dielectric layer 76. In addition, an inorganic material is obliquely deposited from the first direction or the third direction orthogonal to the second direction by a vapor deposition method, and is laminated on the second dielectric layer 76 to form a third dielectric layer. In the same way as in the fifth step of forming 77, an inorganic material is obliquely deposited from the fourth direction opposite to the third direction by the vapor deposition method, and is laminated on the third dielectric layer 77 to form the fourth dielectric. And a sixth step of forming the body layer 78.

  In the manufacturing method of the polarizing element 70B of the present embodiment, an example of the extending direction of the slit 73 is the Y direction as described above. An example of the first direction intersecting the extending direction of the slit 73 is the 3 o'clock direction, and an example of the second direction opposite to the first direction is the 9 o'clock direction. An example of the third direction is the 12 o'clock direction, and an example of the fourth direction opposite to the third direction is the 6 o'clock direction. The third direction may be the 6 o'clock direction, in which case the fourth direction is the 12 o'clock direction opposite to the 6 o'clock direction. As described above, the direction in which the film is formed at the predetermined angle θ in the film formation direction defined by the first direction to the fourth direction is the inclination direction of the optical axis in each dielectric layer.

According to the polarizing element 70B of the second embodiment and the manufacturing method thereof, the following effects can be obtained.
A first dielectric layer 75 is formed by obliquely depositing an inorganic material by a vapor deposition method from the 3 o'clock direction perpendicular to the direction in which the plurality of slits 73 extend with respect to the metal film 72, An inorganic material is obliquely deposited on the layer 75 from the 9 o'clock direction by a vapor deposition method to form the second dielectric layer 76. Further, an inorganic material is obliquely deposited from the 12 o'clock direction by a vapor deposition method, and is laminated on the second dielectric layer 76 to form a third dielectric layer 77. An inorganic material is obliquely deposited from the 6 o'clock direction by a vapor deposition method, and is laminated on the third dielectric layer 77 to form a fourth dielectric layer 78. The direction of inclination of the optical axis of the second dielectric layer 76 related to the film formation is opposite to the direction of inclination of the optical axis of the first dielectric layer 75, so that it is caused by the inclination of the optical axis of the first dielectric layer 75. This phase difference can be canceled by the second dielectric layer 76. Similarly, since the tilt direction of the optical axis of the fourth dielectric layer 78 is opposite to the tilt direction of the optical axis of the third dielectric layer 77, the optical axis of the third dielectric layer 77 is the same. The phase difference caused by the inclination of the fourth dielectric layer 78 can be canceled out. Further, since the tilt direction of the optical axis of the second dielectric layer 76 is orthogonal to the tilt direction of the optical axis of the third dielectric layer 77, the sealing layer 74B is optically isotropic in plan view. Become. That is, it is possible to provide or manufacture the wire grid type polarizing element 70B sealed with the sealing layer 74B that hardly causes the phase difference. Further, since the metal film 72 formed with the plurality of slits 73 is sealed by the four dielectric layers stacked, cracks are less likely to occur, and compared to the polarizing element 70A of the first embodiment, Durability quality (heat resistance, moisture resistance) is further improved.

(Third embodiment)
Next, the polarizing element of 3rd Embodiment and its manufacturing method are demonstrated with reference to FIG.8 and FIG.9. 8 and 9 are schematic views showing the structure of the polarizing element of the third embodiment and the optical structure of the sealing layer. Specifically, FIG. 8 shows the structure when viewed from the direction along the Y direction, and FIG. 9 shows the structure when viewed from the direction along the X direction. The polarizing element of the third embodiment is obtained by changing the configuration of the sealing layer 74B with respect to the polarizing element 70B of the second embodiment. Accordingly, the same components as those of the polarizing element 70B of the second embodiment (or the polarizing element 70A of the first embodiment) are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 8, the polarizing element 70 </ b> C of the present embodiment is provided on the translucent base material 71, the metal film 72 provided on one surface side of the base material 71, and the metal film 72. A light-transmitting sealing layer 74C. The metal film 72 is provided with a plurality of slits 73. The slit 73 extends in the Y direction. Similar to the polarizing element 70A of the first embodiment, the metal wires 72a and the slits 73 are arranged at equal intervals in the X direction.

  The sealing layer 74C is formed by laminating a first dielectric layer 75, a second dielectric layer 76c, a third dielectric layer 77c, and a fourth dielectric layer 78c in this order. Each dielectric layer is formed by depositing the same inorganic material from an oblique direction with respect to the substrate surface (metal film 72) by a vapor deposition method. Therefore, the first dielectric layer 75, the second dielectric layer 76c, the third dielectric layer 77c, and the fourth dielectric layer 78c are all optically having a refractive index n of nx due to the anisotropy of film formation. It can be expressed as a refractive index ellipsoid satisfying the relationship> ny> nz.

  As described in the second embodiment (or the first embodiment), the tilt direction of the optical axis of the first dielectric layer 75 is, for example, 3 o'clock. On the other hand, as shown in FIG. 8, the inclination direction of the optical axis of the third dielectric layer 77c laminated on the first dielectric layer 75 via the second dielectric layer 76c is 3 o'clock. The opposite direction is 9 o'clock. Further, as shown in FIG. 9, the inclination direction of the optical axis of the second dielectric layer 76c laminated on the first dielectric layer 75 is, for example, the 12 o'clock direction orthogonal to the 3 o'clock direction, and the second dielectric layer The tilt direction of the optical axis of the fourth dielectric layer 78c laminated with respect to the layer 76c via the third dielectric layer 77c is a 6 o'clock direction opposite to the tilt direction of the optical axis of the second dielectric layer 76c. It has become. Therefore, the tilt direction of the optical axis of the first dielectric layer 75 and the tilt direction of the optical axis of the second dielectric layer 76c are orthogonal to each other, and the tilt direction of the optical axis of the second dielectric layer 76c and the third dielectric layer The inclination direction of the optical axis of 77c is orthogonal, and the inclination direction of the optical axis of the third dielectric layer 77c is orthogonal to the inclination direction of the optical axis of the fourth dielectric layer 78c. As described in the first embodiment, if the thickness of each dielectric layer is adjusted as appropriate, the phase difference caused by the inclination of the optical axis of the first dielectric layer 75 is canceled by the third dielectric layer 77c. The phase difference caused by the inclination of the optical axis of the second dielectric layer 76c can be canceled by the fourth dielectric layer 78c.

  According to the optical arrangement of the first dielectric layer 75, the second dielectric layer 76c, the third dielectric layer 77c, and the fourth dielectric layer 78c, the optical axis of the first dielectric layer 75 is inclined. The tilt direction of the optical axis of the second dielectric layer 76c is orthogonal to the direction, and the tilt direction of the optical axis of the fourth dielectric layer 78c is orthogonal to the tilt direction of the optical axis of the third dielectric layer 77c. Therefore, when viewed from directly above in the Z direction with respect to the base material 71, the sealing layer 74C is nx = ny> nz, similarly to the sealing layer 74B in the polarizing element 70B of the second embodiment. A refractive index ellipsoid satisfying the above relationship. Therefore, the optical anisotropy (nx> ny) in plan view of each dielectric layer is eliminated, and the sealing layer 74C becomes optically isotropic in plan view.

  The manufacturing method of the polarizing element 70 </ b> C of the present embodiment includes a first step of forming a metal film 72 on the substrate 71, a second step of forming a plurality of slits 73 in the formed metal film 72, The third step of forming the first dielectric layer 75 by obliquely depositing the inorganic material from the first direction intersecting the extending direction of the slit 73 by the phase film formation method, and the vapor phase film formation method, A fourth step in which an inorganic material is obliquely deposited from a second direction orthogonal to the first direction and is stacked on the first dielectric layer 75 to form the second dielectric layer 76c. In addition, an inorganic material is obliquely deposited from a first direction or a third direction opposite to the second direction by a vapor deposition method, and is stacked on the second dielectric layer 76c to form a third dielectric layer. The inorganic material is obliquely deposited from the fourth direction which is opposite to the first direction or the second direction and orthogonal to the third direction by the same vapor phase film forming method as the fifth step of forming 77c And a sixth step of forming the fourth dielectric layer 78c by being stacked on the third dielectric layer 77c.

  In the manufacturing method of the polarizing element 70C of the present embodiment, an example of the extending direction of the slit 73 is the Y direction as described above. An example of the first direction intersecting with the extending direction of the slit 73 is the 3 o'clock direction, and an example of the second direction orthogonal to the first direction is the 12 o'clock direction. An example of the third direction opposite to the first direction or the second direction is the 9 o'clock direction, and is a fourth direction that is opposite to the first direction or the second direction and orthogonal to the third direction. An example of this direction is the 6 o'clock direction.

  The third direction may be the 6 o'clock direction opposite to the 12 o'clock direction, and in this case, the fourth direction is the 9 o'clock direction opposite to the 3 o'clock direction. In this way, the phase difference caused by the inclination of the optical axis of the first dielectric layer 75 can be canceled out by the fourth dielectric layer 78c, and the position caused by the inclination of the optical axis of the second dielectric layer 76c. The phase difference can be canceled by the third dielectric layer 77c.

According to the polarizing element 70C of the third embodiment and the manufacturing method thereof, the following effects can be obtained.
A first dielectric layer 75 is formed by obliquely depositing an inorganic material by a vapor deposition method from the 3 o'clock direction perpendicular to the direction in which the plurality of slits 73 extend with respect to the metal film 72, A second dielectric layer 76c is formed by obliquely depositing an inorganic material on the layer 75 from the 12 o'clock direction by a vapor deposition method. Furthermore, an inorganic material is obliquely deposited from the 9 o'clock direction by a vapor deposition method, and is laminated on the second dielectric layer 76c to form a third dielectric layer 77c. An inorganic material is obliquely deposited from the 6 o'clock direction by a vapor deposition method, and is laminated on the third dielectric layer 77c to form a fourth dielectric layer 78c. The inclination direction of the optical axis of the third dielectric layer 77c related to the film formation is opposite to the inclination direction of the optical axis of the first dielectric layer 75. This phase difference can be canceled out by the third dielectric layer 77c. Similarly, since the inclination direction of the optical axis of the fourth dielectric layer 78c according to the film formation is opposite to the inclination direction of the optical axis of the second dielectric layer 76c, the optical axis of the second dielectric layer 76c. The phase difference caused by the inclination of the fourth dielectric layer 78c can be canceled out. Furthermore, since the tilt directions of the optical axes of the dielectric layers are orthogonal to each other, the sealing layer 74C is optically isotropic in a plan view. That is, it is possible to provide or manufacture the wire grid type polarizing element 70C sealed with the sealing layer 74C that hardly causes a phase difference. Further, since the metal film 72 formed with the plurality of slits 73 is sealed by the four dielectric layers stacked, cracks are less likely to occur, and compared to the polarizing element 70A of the first embodiment, Durability quality (heat resistance, moisture resistance) is further improved.

(Fourth embodiment)
Next, the polarizing element of 4th Embodiment and its manufacturing method are demonstrated with reference to FIG.10 and FIG.11. FIG. 10 is a schematic perspective view showing the configuration of the polarizing element of the fourth embodiment, and FIG. 11 is a schematic view showing the structure of the polarizing element of the fourth embodiment and the optical structure of the sealing layer. The polarizing element of the fourth embodiment is obtained by further laminating a dielectric layer on the sealing layer 74B in the polarizing element 70B of the second embodiment. Accordingly, the same components as those of the polarizing element 70B of the second embodiment (or the polarizing element 70A of the first embodiment) are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 10, the polarizing element 70 </ b> D of the present embodiment is provided on the translucent base material 71, the metal film 72 provided on one surface side of the base material 71, and the metal film 72. A light-transmitting sealing layer 74D. The metal film 72 is provided with a plurality of slits 73. The slit 73 extends in the Y direction. Similar to the polarizing element 70A of the first embodiment, the metal wires 72a and the slits 73 are arranged at equal intervals in the X direction.

  The sealing layer 74D is formed by laminating a first dielectric layer 75, a second dielectric layer 76, a third dielectric layer 77, a fourth dielectric layer 78, and a fifth dielectric layer 79 in this order. Each of the first dielectric layer 75 to the fourth dielectric layer 78 is formed by depositing the same inorganic material in an oblique direction with respect to the substrate surface (metal film 72) by a vapor deposition method. . Accordingly, the first dielectric layer 75, the second dielectric layer 76, the third dielectric layer 77, and the fourth dielectric layer 78 are all optically having a refractive index n of nx due to anisotropy of film formation. > Ny> nz, and can be expressed as a refractive index ellipsoid. As described in the second embodiment, when the fourth dielectric layer 78 is stacked, as shown in FIG. It is optically isotropic (nx = ny) in view.

  In the present embodiment, as shown in FIG. 11, the same inorganic material is deposited from the normal direction of the substrate surface (metal film 72) by a vapor deposition method, and is laminated on the fourth dielectric layer 78. Five dielectric layers 79 were formed. The fifth dielectric layer 79 can be expressed as a refractive index ellipsoid whose refractive index n satisfies the relationship of nz> nx = ny. The optical axis of the fifth dielectric layer 79 is the nz axis having the highest refractive index.

  According to such a configuration of the sealing layer 74 </ b> D, the thickness of the fifth dielectric layer 79 in the thickness direction from the first dielectric layer 75 to the fourth dielectric layer 78 is adjusted by appropriately adjusting the thickness of the fifth dielectric layer 79. The phase difference can be canceled out by the fifth dielectric layer 79. Then, the sealing layer 74D becomes an optically isotropic sphere in which the refractive index ellipsoid satisfies the relationship of nx = ny = nz. That is, it is difficult for a phase difference to occur for light incident from all directions.

  The manufacturing method of the polarizing element 70D of the present embodiment includes a first step of forming a metal film 72 on the substrate 71, a second step of forming a plurality of slits 73 in the formed metal film 72, The third step of forming the first dielectric layer 75 by obliquely depositing the inorganic material from the first direction intersecting the extending direction of the slit 73 by the phase film formation method, and the vapor phase film formation method, And a fourth step in which an inorganic material is obliquely deposited from a second direction opposite to the first direction and is stacked on the first dielectric layer 75 to form the second dielectric layer 76. In addition, an inorganic material is obliquely deposited from the first direction or the third direction orthogonal to the second direction by a vapor deposition method, and is laminated on the second dielectric layer 76 to form a third dielectric layer. In the same way as in the fifth step of forming 77, an inorganic material is obliquely deposited from the fourth direction opposite to the third direction by the vapor deposition method, and is laminated on the third dielectric layer 77 to form the fourth dielectric. And a sixth step of forming the body layer 78. Furthermore, it has the 7th process of depositing an inorganic material from the normal line direction of the base material 71, and laminating | stacking on the 4th dielectric material layer 78 by the vapor phase film-forming method, and forming the 5th dielectric material layer 79. .

  In the manufacturing method of the polarizing element 70D of the present embodiment, an example of the extending direction of the slit 73 is the Y direction as described above. An example of the first direction intersecting the extending direction of the slit 73 is the 3 o'clock direction, and an example of the second direction opposite to the first direction is the 9 o'clock direction. An example of the third direction is the 12 o'clock direction, and an example of the fourth direction opposite to the third direction is the 6 o'clock direction. The third direction may be the 6 o'clock direction, in which case the fourth direction is the 12 o'clock direction opposite to the 6 o'clock direction.

  According to the polarizing element 70D of the fourth embodiment and the method for manufacturing the same, the first dielectric layer 75 to the fourth dielectric layer 78, which are laminated by depositing an inorganic material obliquely by a vapor deposition method, Further, the fifth dielectric layer 79 in which an inorganic material is deposited from the normal direction of the base material surface by the vapor deposition method is laminated to be optically isotropic (nx = ny = nz). The sealing layer 74D can be formed. That is, it is possible to provide or manufacture the wire grid type polarizing element 70D sealed with the sealing layer 74D that hardly causes a phase difference with respect to light incident from all directions. In addition, since the metal film 72 in which the plurality of slits 73 are formed is sealed by the five dielectric layers that are stacked, cracks are less likely to occur, and compared to the polarizing element 70B of the second embodiment, Durability quality (heat resistance, moisture resistance) is further improved.

  The polarizing element 70D of the present embodiment is obtained by laminating the fifth dielectric layer 79 on the sealing layer 74B of the polarizing element 70B of the second embodiment. However, the polarizing element 70D of the third embodiment is different from the polarizing element 70C of the third embodiment. A similar effect can be obtained even when the fifth dielectric layer 79 is laminated on the sealing layer 74C.

(Fifth embodiment)
<Electronic equipment>
Next, a projection display device will be described as an example of an electronic device to which the wire grid type polarizing element of each of the above embodiments can be applied. FIG. 12 is a schematic diagram showing a configuration of a three-plate transmissive liquid crystal projector as an example of a projection display device as an electronic apparatus, and FIG. 13 is a schematic cross-sectional view showing a configuration of a liquid crystal device as a light modulation means.

  As shown in FIG. 12, the liquid crystal projector 1000 of the present embodiment includes a polarization illumination device 1100 arranged along the system optical axis L, and two dichroic mirrors 1104 and 1105 serving as light separation elements. . In addition, three reflection mirrors 1106, 1107, 1108 and five relay lenses 1201, 1202, 1203, 1204, 1205 are provided. Further, it includes transmissive liquid crystal light valves 1210, 1220, and 1230 as three light modulation means, a cross dichroic prism 1206 as a light combining element, and a projection lens 1207.

  The polarized light illumination device 1100 is generally configured by a lamp unit 1101 as a light source composed of a white light source such as an ultra-high pressure mercury lamp or a halogen lamp, an integrator lens 1102, and a polarization conversion element 1103.

  The dichroic mirror 1104 reflects red light (R) and transmits green light (G) and blue light (B) among the polarized light beams emitted from the polarization illumination device 1100. Another dichroic mirror 1105 reflects the green light (G) transmitted through the dichroic mirror 1104 and transmits the blue light (B).

The red light (R) reflected by the dichroic mirror 1104 is reflected by the reflection mirror 1106 and then enters the liquid crystal light valve 1210 via the relay lens 1205.
Green light (G) reflected by the dichroic mirror 1105 enters the liquid crystal light valve 1220 via the relay lens 1204.
The blue light (B) transmitted through the dichroic mirror 1105 is incident on the liquid crystal light valve 1230 via a light guide system including three relay lenses 1201, 1202, 1203 and two reflection mirrors 1107, 1108.

  The liquid crystal light valves 1210, 1220, and 1230 are disposed to face the incident surfaces of the cross dichroic prism 1206 for each color light. The color light incident on the liquid crystal light valves 1210, 1220, and 1230 is modulated based on video information (video signal) and emitted toward the cross dichroic prism 1206. In this prism, four right-angle prisms are bonded together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface thereof. The three color lights are synthesized by these dielectric multilayer films, and the light representing the color image is synthesized. The synthesized light is projected on the screen 1300 by the projection lens 1207 which is a projection optical system, and the image is enlarged and displayed.

  The liquid crystal light valve 1210 is obtained by applying the liquid crystal device 100 as an electro-optical device shown in FIG. The liquid crystal device 100 includes a pair of polarizing elements 41 and 42 arranged in crossed Nicols on the color light incident side and the emission side. The same applies to the other liquid crystal light valves 1220 and 1230. As the pair of polarizing elements 41 and 42, the polarizing elements of the above-described embodiments can be applied.

<Electro-optical device>
As shown in FIG. 13, a liquid crystal device 100 as an electro-optical device includes a liquid crystal panel 110 having a first substrate 10 and a second substrate 20 as a pair of substrates, and a liquid crystal layer 50 sandwiched between the pair of substrates. I have. The base material of the first substrate 10 and the second substrate 20 is a transparent quartz substrate, for example. A pixel electrode 15 is provided on the liquid crystal layer 50 side of the first substrate 10. A counter electrode 23 is provided on the liquid crystal layer 50 side of the second substrate 20. The pixel electrode 15 and the counter electrode 23 are formed using a transparent conductive film such as ITO or IZO. Although not shown in FIG. 13, the liquid crystal device 100 of the present embodiment is an active drive type, and a thin film transistor is provided on the first substrate 10 as a switching element that controls the switching of the pixel electrode 15. .

  The liquid crystal layer 50 in the present embodiment is composed of liquid crystal molecules LC having negative dielectric anisotropy. An alignment film 18 is formed on the pixel electrode 15 to align the liquid crystal molecules LC substantially vertically at a predetermined pretilt angle θp. Similarly, an alignment film 28 for aligning the liquid crystal molecules LC substantially vertically at a predetermined pretilt angle θp is also formed on the counter electrode 23. The alignment film 18 and the alignment film 28 are aggregates (inorganic alignment films) of columnar bodies formed by obliquely depositing an inorganic material such as silicon oxide or aluminum oxide, for example, at a predetermined angle θb with respect to each electrode. is there. The vapor deposition direction in forming the alignment film 18 is completely opposite to the vapor deposition direction in forming the alignment film 28. The direction of the pretilt of the liquid crystal molecules LC depends on the deposition direction. In addition, the pretilt angle θp with respect to the normal of the electrode surface depends on the inclination angle θc of the columnar body and the deposition state of the columnar body. The inclination angle θc of the columnar body deposited in an oblique direction from each electrode is not necessarily the same as the predetermined angle θb in the oblique vapor deposition.

  The vapor deposition direction of the inorganic material intersects the transmission axis or the absorption axis of the polarizing elements 41 and 42 arranged in crossed Nicols on the light incident side and the emission side of the liquid crystal panel 110 at 45 degrees. That is, the pretilt direction of the liquid crystal molecules LC intersects the transmission axis or absorption axis of the polarizing elements 41 and 42 arranged in crossed Nicols at 45 degrees. Such an alignment state of the liquid crystal molecules LC is called uniaxial vertical alignment. In the present embodiment, since the polarizing elements of the above-described embodiments are applied as the polarizing elements 41 and 42, a phase difference hardly occurs in the polarizing elements themselves, so that excellent optical characteristics such as contrast ratio and viewing angle characteristics are realized. ing. Moreover, since the said polarizing element is sealed with the sealing layer, the outstanding durable quality is implement | achieved.

  In FIG. 13, the light is shown to be incident from the second substrate 20 side, but the light may be incident from the first substrate 10 side. Further, since the liquid crystal layer 50 generates a phase difference due to the pretilt of the liquid crystal molecules LC, a phase difference compensation plate capable of compensating in a direction to cancel the phase difference is disposed between the liquid crystal panel 110 and the polarizing element. Also good. As the phase difference compensation plate, for example, a negative C plate inclined at a predetermined angle with respect to the optical axis can be used.

  According to such a liquid crystal projector 1000, the liquid crystal device 100 is used as the liquid crystal light valves 1210, 1220, and 1230. Therefore, the liquid crystal projector 100 has a transmissive type that has excellent durability and a good display state. A liquid crystal projector 1000 can be provided.

  Next, another projection type display device as an electronic apparatus to which the wire grid type polarizing element of each of the above embodiments can be applied will be described as an example. FIG. 14 is a schematic diagram showing a configuration of a three-plate reflection type liquid crystal projector as an example of another projection type display device as an electronic apparatus, and FIG. FIG. That is, the wire grid type polarizing element of each of the above embodiments can also be applied to a reflective liquid crystal device.

  As shown in FIG. 14, a liquid crystal projector 1500 that is another projection display device of this embodiment includes a polarization illumination device 1100 arranged along the system optical axis L, three dichroic mirrors 1111, 1112, and 1115. Two reflection mirrors 1113, 1114, three reflection type liquid crystal light valves 1250, 1260, 1270 as light modulation means, a cross dichroic prism 1206, and a projection lens 1207 are provided.

The polarized light beam emitted from the polarization illumination device 1100 is incident on the dichroic mirror 1111 and the dichroic mirror 1112 which are arranged orthogonal to each other. A dichroic mirror 1111 serving as a light separation element reflects red light (R) in the incident polarized light flux. The dichroic mirror 1112 as the other light separation element reflects green light (G) and blue light (B) in the incident polarized light flux.
The reflected red light (R) is reflected again by the reflection mirror 1113 and enters the liquid crystal light valve 1250. On the other hand, the reflected green light (G) and blue light (B) are reflected again by the reflection mirror 1114 and enter the dichroic mirror 1115 as a light separation element. The dichroic mirror 1115 reflects green light (G) and transmits blue light (B). The reflected green light (G) enters the liquid crystal light valve 1260. The transmitted blue light (B) enters the liquid crystal light valve 1270.

The liquid crystal light valve 1250 includes a reflective liquid crystal panel 1251 and a wire grid type polarizing element 1253 which is a reflective polarizing element.
The liquid crystal light valve 1250 is arranged so that the red light (R) reflected by the polarizing element 1253 is perpendicularly incident on the incident surface of the cross dichroic prism 1206. Also, an auxiliary polarizing element 1254 that compensates for the degree of polarization of the polarizing element 1253 is arranged on the red light (R) incident side of the liquid crystal light valve 1250, and another auxiliary polarizing element 1255 is crossed on the red light (R) exit side. It is disposed along the incident surface of the dichroic prism 1206. When a polarizing beam splitter is used as the reflective polarizing element, the pair of auxiliary polarizing elements 1254 and 1255 can be omitted.
The configuration of the reflective liquid crystal light valve 1250 and the arrangement of the components are the same in the other reflective liquid crystal light valves 1260 and 1270.

  Each color light incident on the liquid crystal light valves 1250, 1260, 1270 is modulated based on the image information, and again enters the cross dichroic prism 1206 via the wire grid type polarization elements 1253, 1263, 1273. In the cross dichroic prism 1206, the color lights are combined, and the combined light is projected onto the screen 1300 by the projection lens 1207, and the image is enlarged and displayed.

  In the present embodiment, a liquid crystal device 200 as an electro-optical device shown in FIG. 15 is applied as the liquid crystal light valves 1250, 1260, and 1270. On the light incident side of the liquid crystal device 200, a wire grid type polarizing element 201 is disposed in an inclined state at an angle of 45 degrees with respect to the optical axis. As the polarizing element 201, the polarizing element of each of the above embodiments can be applied.

  As shown in FIG. 15, a liquid crystal device 200 as an electro-optical device includes a liquid crystal panel 210 having a first substrate 10 and a second substrate 20 as a pair of substrates, and a liquid crystal layer 50 sandwiched between the pair of substrates. I have. The base material of the first substrate 10 and the second substrate 20 is a transparent quartz substrate, for example. On the liquid crystal layer 50 side of the first substrate 10, a pixel electrode 15R having light reflectivity is provided. A counter electrode 23 is provided on the liquid crystal layer 50 side of the second substrate 20. The pixel electrode 15R is formed using, for example, aluminum or an alloy of aluminum having light reflectivity. The counter electrode 23 is formed using a transparent conductive film such as ITO or IZO. Although not shown in FIG. 15, the liquid crystal device 200 of the present embodiment is an active drive type, and a thin film transistor is provided on the first substrate 10 as a switching element that controls the switching of the pixel electrode 15R. ing.

  The liquid crystal layer 50 is composed of liquid crystal molecules LC having negative dielectric anisotropy, similar to the transmissive liquid crystal device 100 described above. An alignment film 18 is formed on the pixel electrode 15R to align the liquid crystal molecules LC substantially vertically at a predetermined pretilt angle θp. Similarly, an alignment film 28 for aligning the liquid crystal molecules LC substantially vertically at a predetermined pretilt angle θp is also formed on the counter electrode 23. As described above, the alignment film 18 and the alignment film 28 are aggregates (inorganic alignment films) of columnar bodies formed by, for example, oblique deposition of an inorganic material such as silicon oxide or aluminum oxide. The relationship between the deposition direction and the pretilt direction of the liquid crystal molecules LC is also the same as that of the transmissive liquid crystal device 100 described above.

  The linearly polarized light (P wave) transmitted through the wire grid type polarizing element 201 enters the liquid crystal panel 210 and is reflected by the pixel electrode 15R. The linearly polarized light that is reflected by the pixel electrode 15R and incident on the polarizing element 201 again becomes an S wave because the polarization direction is rotated by 90 degrees. The linearly polarized light (S wave) incident on the polarizing element 201 cannot be transmitted through the polarizing element 201 and is reflected as emitted light.

  Returning to FIG. 14, the green light (G) modulated by the liquid crystal light valve 1260 goes straight to the cross dichroic prism 1206, and the red light (R) modulated by the liquid crystal light valve 1250 and the liquid crystal light valve. The blue light (B) modulated at 1270 is reflected by the dielectric multilayer film with the left and right sides of the image reversed. Therefore, the optical conditions are set corresponding to the color light so that the combined light does not cause coloring due to the viewing angle characteristics of the liquid crystal light valves 1250, 1260, and 1270. Specifically, with respect to the pretilt direction of the liquid crystal molecules in the green light (G) liquid crystal panel 1261, the liquid crystal molecules in the other red light (R) liquid crystal panel 1251 and the blue light (B) liquid crystal panel 1271 The inorganic alignment film is formed by reversing the planar deposition direction of the oblique deposition by 180 ° so that the pretilt direction is reversed.

  Similar to the liquid crystal device 100 described above, the liquid crystal layer 50 generates a phase difference due to the pretilt of the liquid crystal molecules LC. Therefore, a phase difference compensation plate capable of compensating in the direction to cancel the phase difference is used as the liquid crystal panel 210. You may arrange | position between the polarizing elements 201. FIG. As the phase difference compensation plate, for example, a negative C plate inclined at a predetermined angle with respect to the optical axis can be used.

  According to such a liquid crystal projector 1500, the liquid crystal device 200 is applied to the reflective liquid crystal light valves 1250, 1260, and 1270 provided for each color light. A polarizing element 201 to which the polarizing element of each embodiment can be applied is provided. Therefore, it is possible to provide a reflective liquid crystal projector 1500 that has excellent durability and a good display state.

  In the liquid crystal projector 1500, the application of the polarizing element of each of the above embodiments is not limited to the wire grid type polarizing element 1253 (polarizing element 201) in the liquid crystal light valve 1250. For example, the degree of polarization of the polarizing element 1253 is set. The present invention can also be applied to the auxiliary polarizing elements 1254 and 1255 to be supplemented. The same applies to the other liquid crystal light valves 1260 and 1270.

  The present invention is not limited to the embodiments described above, and can be appropriately changed without departing from the spirit or concept of the invention that can be read from the claims and the entire specification. The manufacturing method of the polarizing element, the electro-optical device and the electronic apparatus to which the polarizing element is applied are also included in the technical scope of the present invention. Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(Modification 1) The configuration of the polarizing element having the dielectric layer in which the inorganic material is deposited from the normal direction to the base material surface of the base material 71 is the configuration of the polarizing element 70D shown in the fourth embodiment. It is not limited. FIG. 16 is a schematic diagram showing the structure of a polarizing element of a modification and the optical structure of the sealing layer. For example, as illustrated in FIG. 16, the polarizing element 70 </ b> E of Modification 1 includes a translucent base material 71, a metal film 72 provided on one surface of the base material 71 and having a plurality of slits 73, a metal A sealing layer 74E that seals the film 72; The sealing layer 74E includes a first dielectric layer 75, a dielectric layer 79e, and a second dielectric layer 76 that are sequentially stacked from the metal film 72 side. The first dielectric layer 75 is formed by obliquely depositing an inorganic material by a vapor deposition method from the 3 o'clock direction orthogonal to the extending direction of the slit 73. The dielectric layer 79e is formed by depositing an inorganic material from the normal direction to the substrate surface. The second dielectric layer 76 is formed by obliquely depositing an inorganic material by a vapor deposition method from 9 o'clock. Therefore, the optical axis of the first dielectric layer 75 is inclined in the 3 o'clock direction, and the optical axis of the second dielectric layer 76 is inclined in the 9 o'clock direction opposite to the 3 o'clock direction. The direction of the optical axis of the dielectric layer 79e is a direction along the normal of the substrate surface. Since the direction of the optical axis of each dielectric layer is related to the film forming direction, as in Modification 1, the first dielectric layer 75 and the second dielectric layer whose film forming directions (film forming directions) are opposite to each other. The second dielectric layer 79e is inserted between the first dielectric layer 75 and the second dielectric layer 76 directly on the first dielectric layer 75 by inserting the dielectric layer 79e between the first dielectric layer 75 and the second dielectric layer 76. It can be suppressed that the deposition direction in the initial stage of film formation in the body layer 76 is disturbed. That is, the optically stable second dielectric layer 76 can be realized or formed.
Further, the dielectric layer 79e on which the inorganic material is deposited from the normal direction to the base material surface of the base material 71 may be disposed above the first dielectric layer 75. For example, the second embodiment In the sealing layer 74B of the polarizing element 70B, it may be disposed between the second dielectric layer 76 and the third dielectric layer 77, or between the third dielectric layer 77 and the fourth dielectric layer 78. Good.

  (Modification 2) The sealing layer that seals the metal film 72 may be a multi-layer structure that can reduce or eliminate the phase difference of the dielectric layer as described in the first to fourth embodiments. If translucency is ensured, six or more layers may be sufficient.

  (Modification 3) The plurality of dielectric layers constituting the sealing layer are not limited to being formed of the same inorganic material. Forming a plurality of dielectric layers using the same inorganic material is excellent in that the manufacturing process can be simplified. For example, if a plurality of dielectric layers are formed using inorganic materials having different refractive indexes, a plurality of dielectric layers are formed. It is possible to suppress the film thickness of the sealing layer made of the dielectric layer. Further, it is possible to improve such that the first dielectric layer 75 is formed by selecting an inorganic material which is not easily cracked.

  (Modification 4) The electro-optical device to which the polarizing element of each of the above embodiments can be applied is not limited to the liquid crystal device 100 or the liquid crystal device 200. For example, the present invention can be applied to an optical sensor or an imaging device.

  (Modification 5) Electronic equipment to which the liquid crystal device 100 or the liquid crystal device 200 as an electro-optical device can be applied is not limited to the transmissive liquid crystal projector 1000 or the reflective liquid crystal projector 1500. For example, the liquid crystal device includes a color filter corresponding to at least red (R), green (G), and blue (B) on one of a pair of substrates opposed to each other with the liquid crystal layer 50 interposed therebetween. The projector 1000 may have a single plate configuration. Also, for example, a projection type HUD (head-up display), HMD (head-mounted display), electronic book, personal computer, digital still camera, liquid crystal television, viewfinder type or monitor direct view type video recorder, car navigation system, The liquid crystal device 100 or the liquid crystal device 200 can be used as a display unit of an information terminal device such as an electronic notebook or POS.

  70A, 70B, 70C, 70D, 70E ... polarizing element, 71 ... base material, 72 ... metal film, 73 ... slit, 74, 74B, 74C, 74D, 74E ... sealing layer, 75 ... first dielectric layer, 76 ... Second dielectric layer, 77 ... Third dielectric layer, 78 ... Fourth dielectric layer, 79 ... Fifth dielectric layer, 100,200 ... Liquid crystal device as electro-optical device, 1000,1500 ... Electronic device LCD projector.

Claims (11)

A substrate;
A metal film provided on the substrate and having a plurality of slits;
A first dielectric layer laminated on the metal film to seal the plurality of slits;
A polarizing element comprising: a second dielectric layer stacked on the first dielectric layer and having an optical axis inclined in a direction different from an inclination direction of the optical axis of the first dielectric layer. In a direction intersecting with the extending direction of the slit,
An optical axis of the first dielectric layer is inclined in a first direction on the metal film;
2. The polarizing element according to claim 1, wherein an optical axis of the second dielectric layer is inclined in a second direction opposite to the first direction on the first dielectric layer. A third dielectric layer stacked on the second dielectric layer and having an optical axis inclined in the first direction or a third direction orthogonal to the second direction;
The polarizing element according to claim 2, further comprising: a fourth dielectric layer stacked on the third dielectric layer and having an optical axis inclined in a fourth direction opposite to the third direction. In a direction intersecting with the extending direction of the slit,
An optical axis of the first dielectric layer is inclined in a first direction on the metal film;
An optical axis of the second dielectric layer is inclined in a second direction perpendicular to the first direction on the first dielectric layer;
A third dielectric layer stacked on the second dielectric layer and having an optical axis inclined in the first direction or a third direction opposite to the second direction;
A fourth dielectric layer stacked on the third dielectric layer and having an optical axis inclined in a fourth direction that is opposite to the first direction or the second direction and orthogonal to the third direction; The polarizing element according to claim 1, further comprising a layer.   The polarizing element according to any one of claims 1 to 4, further comprising a dielectric layer having an optical axis in a normal direction of the base material above the first dielectric layer.   An electro-optical device comprising the polarizing element according to claim 1.   An electronic apparatus comprising the electro-optical device according to claim 6. Forming a plurality of slits in the metal film formed on the substrate;
Forming a first dielectric layer by obliquely depositing an inorganic material from a first direction intersecting with the extending direction of the slit by a vapor deposition method;
Depositing the inorganic material obliquely from a second direction opposite to the first direction by a vapor deposition method, and laminating the first dielectric layer to form a second dielectric layer; The manufacturing method of the polarizing element provided with. A third dielectric layer is deposited by obliquely depositing the inorganic material from the first direction or a third direction orthogonal to the second direction by a vapor deposition method and laminating the second dielectric layer. Forming a step;
Depositing the inorganic material obliquely from a fourth direction opposite to the third direction by a vapor deposition method, and laminating the third dielectric layer to form a fourth dielectric layer; The manufacturing method of the polarizing element of Claim 8 provided with these. Forming a plurality of slits in the metal film formed on the substrate;
Forming a first dielectric layer by obliquely depositing an inorganic material from a first direction intersecting with the extending direction of the slit by a vapor deposition method;
Depositing the inorganic material obliquely from a second direction perpendicular to the first direction by a vapor deposition method, and laminating the first dielectric layer to form a second dielectric layer;
A third dielectric layer is deposited by obliquely depositing the inorganic material from the first direction or a third direction opposite to the second direction by a vapor deposition method and laminating the second dielectric layer. Forming a step;
The inorganic material is obliquely deposited from a fourth direction that is opposite to the first direction or the second direction and orthogonal to the third direction by a vapor deposition method, and the third dielectric And a step of forming a fourth dielectric layer by laminating on the body layer.   11. The method according to claim 8, further comprising a step of depositing the inorganic material from a normal direction of the base material by a vapor deposition method to form a dielectric layer above the first dielectric layer. The manufacturing method of the polarizing element of one term.

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