JP2018081957A - Coating film formation device, coating film formation method and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique which allows for quick formation of a good coating film by making a coating liquid reach a concave pattern, when forming the coating film by a high viscosity coating liquid for a substrate having the concave pattern formed on the surface.SOLUTION: A coating film formation device includes a substrate holding section 21 for holding a substrate W horizontally, a surface treatment liquid supply nozzle supplying a surface treatment liquid for increasing wettability to a coating liquid on the surface of the substrate W to the surface of the substrate W, a press part 41 for pressing the surface treatment liquid, supplied to the surface of the substrate W, against the surface of the substrate W and supplying into the concave pattern, by moving in the horizontal direction relatively to the substrate W in close proximity to the surface of the substrate W, and a coating liquid supply nozzle 31 for supplying the coating liquid to the surface of the substrate W after the surface treatment liquid was pressed by the press part 41.SELECTED DRAWING: Figure 10

Description

  The present invention relates to a technical field of forming a coating film by supplying a coating liquid to the surface of a substrate on which a concave pattern is formed.

  In photolithography, which is one of the semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, by spin coating, followed by exposure and development in order to form a resist pattern. Is done. With the recent high integration of semiconductor circuits, devices with more complicated three-dimensional structures are being studied. When manufacturing such devices, a resist is applied to a wafer having a concave pattern on the surface. In some cases, a resist film is formed.

By the way, in the etching process performed after photolithography, there are cases where the etching selection ratio of the etching target with respect to the resist film formed as described above is small, and there is a demand for the resist film to be a thick film on the order of μm, for example. In order to make the resist film such a thick film, it is necessary to use a resist having a relatively high viscosity. However, when a resist having a relatively high viscosity, that is, a relatively low fluidity, is applied to the wafer having the concave pattern by spin coating, the resist is not sufficiently filled in the concave pattern, and bubbles are generated. May remain. If bubbles remain in such a manner, the thickness of the resist film may become uneven, and when the wafer is heated, the bubbles may expand and further bubbles may enter the resist film. There is.

In order to prevent such a problem, there is a case where a method called pre-wet is used in which a resist solvent is supplied in advance onto the wafer before the resist is applied. For example, Patent Document 1 describes that liquid solvent is discharged from a nozzle and prewetting is performed so as to fill the concave pattern with the solvent. After this pre-wetting, the resist spin-coated on the wafer is filled into the concave pattern by mixing with the solvent filled in the concave pattern. However, since this concave pattern is minute, it takes a relatively long time to fill the solvent with the concave pattern after the surface of the wafer is immersed in the solvent.

JP 2014-93371 A

  The present invention has been made under such circumstances, and the purpose of the present invention is to form a coating film with a high viscosity coating solution on a substrate having a concave pattern on the surface. An object of the present invention is to provide a technique capable of quickly forming a good coating film by spreading into the shape pattern.

The coating film forming apparatus of the present invention is
In a coating film forming apparatus for forming a coating film by supplying a coating liquid to a substrate having a concave pattern formed on the surface,
A substrate holding part for horizontally holding the substrate;
A surface treatment liquid supply nozzle for supplying a surface treatment liquid to the surface of the substrate to improve wettability to the coating liquid on the surface of the substrate;
By moving relatively in the horizontal direction with respect to the substrate in a state of being close to the surface of the substrate, the surface treatment liquid supplied to the surface of the substrate is pressed against the surface of the substrate, and the inside of the concave pattern A pressing part for supplying to
A coating solution supply nozzle for supplying the coating solution to the surface of the substrate after the surface treatment solution is pressed by the pressing unit;
It is provided with.

In a coating film forming method of forming a coating film on a substrate having a concave pattern formed on the surface,
A step of holding the substrate horizontally in a substrate holding portion;
Next, a step of supplying a surface treatment liquid to the surface of the substrate from a surface treatment liquid supply nozzle for enhancing the wettability with respect to the coating liquid on the surface of the substrate;
Subsequently, the surface treatment liquid supplied to the surface of the substrate is pressed against the surface of the substrate by moving the pressing portion in a horizontal direction relative to the substrate in a state of being close to the surface of the substrate. Supplying into the concave pattern
Then, the step of supplying the coating liquid to the substrate to form the coating film,
A coating film forming method comprising:

The storage medium of the present invention is a storage medium storing a computer program used in a coating film forming apparatus for forming a coating film on a substrate having a concave pattern formed on a surface thereof.
The computer program has a set of steps so as to execute the coating film forming method of the present invention.

  According to the present invention, in order to improve the wettability of the substrate, the surface treatment liquid supplied to the surface of the substrate is moved by the pressing unit that moves relatively in the horizontal direction in a state of being close to the surface of the substrate. After pressing against the surface of the substrate, a coating solution is supplied to the substrate to form a coating film. With such a configuration, the surface treatment liquid can be filled quickly and sufficiently into the concave pattern on the surface of the substrate. Since the concave pattern is sufficiently filled with the surface treatment liquid, the coating liquid enters the concave pattern through the surface treatment liquid and fills the concave pattern, so that a coating film is formed. It is possible to prevent bubbles from being included in the concave pattern later. Further, since the processing liquid is quickly filled in the concave pattern, the throughput can be improved.

1 is a schematic perspective view of a resist film forming apparatus according to an embodiment of the present invention. It is a vertical side view of the said resist film forming apparatus. It is a vertical side view of the solvent discharge part provided in the said resist film formation apparatus. It is a vertical side view which shows an example of the board | substrate processed by the said resist film formation apparatus. It is a top view which shows the process process by the said resist film forming apparatus. It is a top view which shows the process process by the said resist film forming apparatus. It is a top view which shows the process process by the said resist film forming apparatus. It is a top view which shows the process process by the said resist film forming apparatus. It is a vertical side view of the said board | substrate. It is a vertical side view of the said board | substrate. It is a vertical side view of the said board | substrate. It is a vertical side view of the said board | substrate. It is a vertical side view of the said board | substrate. It is a vertical side view which shows the structure of another solvent discharge part. It is a top view which shows the other process process by the said resist film forming apparatus. It is a vertical side view which shows the structure of another solvent discharge part. It is a side view of the solvent discharge nozzle and pressing part provided in the said resist film forming apparatus. It is a top view of the wafer processed by the said solvent discharge nozzle and a pressing part. It is a top view which shows the structure of another solvent discharge part. It is a side view which shows an example of operation | movement of a solvent discharge part.

  A resist film forming apparatus 1 according to an embodiment of the present invention will be described with reference to FIG. 1 which is a schematic perspective view and FIG. 2 which is a longitudinal side view. The resist film forming apparatus 1 applies a resist as a coating liquid to the surface of a wafer W, which is a circular substrate having a diameter of 300 mm, for example, and forms a resist film as a coating film. Further, as described in the background art section, the resist film forming apparatus 1 applies a solvent, which is a surface treatment liquid for improving the wettability of the resist to the surface of the wafer W, on the resist surface before applying the resist. Perform pre-wetting. A concave pattern is formed on the surface of the wafer W as will be described later, and the resist film forming apparatus 1 is configured to perform prewetting so that the concave pattern is filled with thinner.

The resist film forming apparatus 1 includes a cup module 2, a resist supply unit 3, and a solvent supply unit 4. The cup module 2 includes a spin chuck 21 that is a substrate holding unit that sucks and horizontally holds the center of the back surface of the wafer W, a rotation mechanism 22 that is a substrate rotation mechanism, and a cup body 23. The spin chuck 21 is connected to a rotation mechanism 22 via a vertically extending shaft, and the spin chuck 21 is rotated by the rotation mechanism 22 so that the wafer W rotates about the vertical axis.

The cup body 23 is formed in a circular shape with an upper opening, and is provided so as to surround the wafer W placed on the spin chuck 21. The cup body 23 receives the liquid splashed from the wafer W, and guides and discharges the liquid through a drain port 24 opened on the lower side. In the figure, reference numeral 25 denotes an exhaust pipe provided in the lower part of the cup body 23, which exhausts the inside of the cup body 23 and prevents the atmosphere in the cup body 23 from being scattered outside. In the figure, reference numeral 26 denotes an elevating pin, which is moved up and down by the elevating mechanism 27 in order to deliver the wafer W between the transfer mechanism outside the resist film forming apparatus 1 and the spin chuck 21.

  Next, the resist supply unit 3 will be described. The resist supply unit 3 includes a resist discharge nozzle 31, a pipe 32, a resist reservoir 33, an arm 34, and a drive mechanism 35. The resist discharge nozzle 31 is configured to discharge a resist vertically downward, and is connected to a resist storage portion 33 via a pipe 32. The resist storage unit 33 includes, for example, a tank, a pump, a valve, and a filter, stores the resist, and pumps the stored resist to the resist discharge nozzle 31. Thus, the resist supplied to the nozzle 31 is a liquid having a viscosity of 400 cP or more, for example, and a relatively thick resist film having a thickness of 100 μm or more is formed using the resist.

The resist discharge nozzle 31 is supported by an arm 34, and the arm 34 is connected to a drive mechanism 35. The drive mechanism 35 is configured to move in the horizontal direction along the guide 36 shown in FIG. 1 and to move the arm 34 up and down. In the figure, reference numeral 37 denotes a standby portion provided outside the cup body 23, and is formed in a container shape with the upper side opened. The resist discharge nozzle 31 can be moved between the standby unit 37 and the center of the wafer W placed on the spin chuck 21 by the driving mechanism 35 described above.

  Next, the solvent supply unit 4 will be described. The solvent supply unit 4 includes a solvent discharge part 41, a pipe 44, a solvent supply source 46, an arm 51, and a drive mechanism 52. The solvent discharge unit 41 will be described with reference to the longitudinal side view of FIG. The solvent discharge portion 41 is configured in a flat circular block shape, and its lower surface is configured as a horizontal circular facing surface 42 that is close to and faces the surface of the wafer W when performing pre-wetting. The diameter L1 of the facing surface 42 is set to 30 mm to 200 mm, for example, and is 50 mm in this example. A solvent discharge port 43 is opened vertically downward at the center of the facing surface 42. The diameter L2 of the discharge port 43 is, for example, 3 mm to 10 mm. The facing surface 42 is configured as a pressing unit for pressing the solvent 40 discharged from the discharge port 43 against the wafer W.

One end of a pipe 44 is connected to the upper side of the solvent discharge part 41. The other end of the pipe 44 is connected to a solvent supply source 46 via a flow rate adjusting unit 47, and the solvent supply source 46 supplies the solvent to the downstream side of the pipe 44. The flow rate adjusting unit 47 includes a valve, and the opening degree of the valve is adjusted based on a control signal output from the control unit 10 to be described later, so that the flow rate of the solvent supplied to the solvent discharge unit 41 is adjusted. . Examples of the solvent supplied from the solvent supply source 46 include PGME (propylene glycol monomethyl ether), PGMEA (propylene glycol monomethyl ether acetate), or a mixture thereof.

The solvent discharge unit 41 is supported by an arm 51, and the arm 51 is connected to a drive mechanism 52. The drive mechanism 52 is configured to be movable in the horizontal direction along the guide 53 shown in FIG. 1 and to move the arm 51 up and down. In the figure, reference numeral 54 denotes a standby portion provided outside the cup body 23, and is formed in a container shape having an upper side opened. By the drive mechanism 52, the solvent discharge unit 41 can move between the standby unit 54 and the wafer W placed on the spin chuck 21, and the solvent discharge position by the discharge port 43 is set to the wafer W. It can be moved horizontally to move along its diameter. When pre-wetting is performed, the solvent discharge unit 41 moves horizontally on the wafer W as described above, and the solvent is discharged from the discharge port 43. At this time, the opposing surface 42 and the surface of the wafer W are close to each other so that the solvent can be pressed against the wafer W as will be described later. Specifically, a distance H1 between the opposing surface 42 and the surface of the wafer W is shown. (Refer FIG. 3) shall be 0.5 mm-2 mm, for example. In addition, since the solvent discharge unit 41 is configured integrally with a nozzle that supplies the solvent and a pressing unit that presses the solvent against the surface of the wafer W, the driving mechanism 52 is a nozzle moving mechanism and a pressing unit horizontal moving mechanism. is there.

  As shown in FIG. 2, the resist film forming apparatus 1 is provided with a control unit 10 including a computer. The control unit 10 has a program storage unit. The program storage unit includes the number of rotations of the wafer W by the rotation mechanism 22, the movement of the resist discharge nozzle 31 by the drive mechanism 35, the movement of the solvent discharge unit 41 by the drive mechanism 52, the movement of the lift pins 26 by the lift mechanism 27, and the flow rate. A program in which commands (step groups) are set so that operations such as adjustment of the flow rate of the solvent supplied to the solvent discharge unit 41 by the adjustment unit 47 and supply of resist to the resist discharge nozzle 31 by the resist storage unit 33 are controlled. Is stored. By this program, a control signal is transmitted to each part constituting the resist film forming apparatus 1 and processing for the wafer W described later is performed. This program is stored in a storage medium such as a compact disk, a hard disk, an MO (magneto-optical disk), or a memory card and installed in the control unit 10.

Hereinafter, processing of the wafer W by the resist film forming apparatus 1 will be described. In this description, a state is shown in which processing is performed on the wafer W having a hole formed on the surface as a concave pattern. FIG. 4 shows a longitudinal side surface of the wafer W. In the figure, reference numeral 61 denotes a silicon layer in which a concave portion 62 forming the hole is formed. In the figure, reference numeral 63 denotes an insulating film that covers the entire surface of the silicon layer 61. In the figure, reference numeral 64 denotes a metal film, which is formed from the inside of the recess 62 to the opening edge of the recess 62. The width L3 of the recess 62 is, for example, 10 nm to 100 nm, and the height H2 / width L3 of the recess 62, which is the aspect ratio of the recess 62, is 5 or more. Many concave portions 62 are formed on the surface of the wafer W at predetermined intervals. The concave pattern may be a groove in addition to the hole.

Hereinafter, description will be made with reference to plan views of the wafer W in FIGS. 5 to 8 and vertical side views of the surface of the wafer W in FIGS. 9 to 13. 9 to 13, for convenience of illustration, the solvent discharge portion 41 is shown smaller than the actual size with respect to the concave portion 62 of the wafer W. First, the wafer W is transferred to the spin chuck 21 via the lift pins 26 by the transfer mechanism. Subsequently, the solvent discharge unit 41 moves from the standby unit 54 onto the wafer W. Then, the solvent discharge portion 41 is disposed such that the discharge port 43 of the solvent discharge portion 41 is located on the center portion of the wafer W and the facing surface 42 is close to the surface of the wafer W as described with reference to FIG. . Thereafter, the wafer W rotates, for example, clockwise in plan view, and the solvent 40 is discharged from the discharge port 43 onto the wafer W to start prewetting (FIG. 5).

The solvent 40 is filled in a gap between the facing surface 42 and the surface of the wafer W, forms a circular liquid pool, and spreads on the wafer W. Subsequently, the solvent discharge unit 41 moves horizontally along the diameter of the wafer W toward the peripheral edge of the wafer W. The movement of the solvent discharge unit 41 is performed at a speed that maintains the state in which the solvent 40 is filled in the gap between the facing surface 42 and the surface of the wafer W (FIG. 6).

Since the facing surface 42 and the surface of the wafer W are close to each other, the solvent 40 supplied from the discharge port 43 to the gap between the facing surface 42 and the surface of the wafer W is separated from the surface of the wafer W by the facing surface 42. (FIG. 9). Then, the solvent 40 pressed against the surface of the wafer W by the facing surface 42 flows from the movement source side to the movement destination side of the solvent discharge unit 41 into the recess 62 below the solvent discharge unit 41 ( FIG. 10). Further, the movement of the solvent discharge part 41 is continued, the solvent 40 continues to flow into the recess 62, and the recess 62 is filled with the solvent 40 so that no voids remain as bubbles. Passes over the recess 62 filled with the solvent 40 (FIG. 11). When the solvent discharge unit 41 is positioned on the peripheral edge of the wafer W and the liquid pool of the solvent 40 covers the entire surface of the wafer W, the discharge of the solvent 40 from the solvent discharge unit 41 is stopped, and the solvent discharge unit 41 is Returning to the standby unit 54, the pre-wetting is completed.

Subsequently, the number of rotations of the wafer W becomes a predetermined number of rotations, and the resist 30 is discharged from the resist discharge nozzle 31 moved from the standby unit 37 onto the center of the wafer W to the center of the wafer W, and the resist coating is started. Is done. The resist 30 is expanded toward the peripheral edge of the wafer W by centrifugal force (FIG. 8). That is, the resist 30 is spin-coated.

The resist 30 enters the recess 62 by being mixed with the solvent 40 filled in the recess 62 (FIG. 12), and is filled in the recess 62 (FIG. 13). The entire surface of the wafer W is covered with the resist 30, the discharge of the resist 30 from the resist discharge nozzle 31 is stopped, and the resist discharge nozzle 31 returns to the standby unit 37. Then, the resist 30 is dried by the rotation of the wafer W, and when the resist film is formed, the rotation of the wafer W is stopped and the resist coating is finished. Thereafter, the wafer W is transferred to the transfer mechanism through the lift pins 26 and is unloaded from the resist film forming apparatus 1.

According to the resist film forming apparatus 1, the solvent 40 discharged from the solvent discharge unit 41 onto the surface of the wafer W constitutes the solvent discharge unit 41 by the rotation of the wafer W and the horizontal movement of the solvent discharge unit 41. Coating is performed so that the facing surface 42 close to the surface of the wafer W is spread over the wafer W. As a result, the solvent 40 is deposited on the entire surface of the wafer W so that the recess 40 on the surface of the wafer W is filled with the solvent 40. Thereafter, the resist 30 is supplied to the wafer W to form a resist film. Since the resist 30 enters the recess 62 via the solvent 40 filled in the recess 62 and fills the recess 62, it is possible to prevent bubbles from being included in the recess 62 after the resist film is formed. . Further, by pressing the solvent 40 against the surface of the wafer W, the solvent 40 can be quickly supplied into the recess 62, so that the throughput can be improved.

In the pre-wetting, the rotation speed of the wafer W is such that the counter surface 42 of the solvent discharge portion 41 passes through the entire surface of the wafer W from the start of the pre-wetting to the end of the pre-wetting, and the concave portion 62 of the entire surface. The rotation speed is relatively small, for example, 10 to 30 rpm so that the solvent 40 can be pushed into the inside. Moreover, at the time of resist application, in order to spin-coat a resist having a relatively high viscosity as described above, the speed is set to, for example, 1000 rpm to 3000 rpm. That is, the rotational speed of the wafer W in the pre-wet is set to be lower than the rotational speed of the wafer W when the resist 30 is spread toward the peripheral edge of the wafer W in resist coating.

Further, in the above pre-wet, the solvent discharge unit 41 may be moved at a constant speed, but in order to allow the opposing surface 42 of the solvent discharge unit 41 to pass through the entire surface of the wafer W, the solvent discharge unit 41 The moving speed of the portion 41 may be set so that the speed when moving on the peripheral edge side of the wafer W is smaller than the speed when moving on the central side of the wafer W. Further, instead of changing the moving speed of the solvent discharge portion 41 as described above, the solvent discharge portion 41 has a larger number of rotations of the wafer W than the rotation speed of the wafer W when the solvent discharge portion 41 is positioned on the center side of the wafer W. The counter surface 42 of the solvent ejection unit 41 may pass through the entire surface of the wafer W by setting the rotation number of the wafer W to be large when positioned on the peripheral edge side.

By the way, in the above pre-wet, the solvent discharge portion 41 is discharged from the solvent discharge portion 41 when the solvent discharge portion 41 is positioned on the center portion of the wafer W and when the solvent discharge portion 41 is positioned on the peripheral portion of the wafer W. Different solvent flow rates may be used. The flow rate of the solvent when the solvent supply unit is located on the central portion of the wafer W is the central supply flow rate, and the flow rate of the solvent when the solvent discharge unit 41 is located on the peripheral portion of the wafer W is the peripheral supply rate. . When a solvent having a relatively high viscosity is used for the prewetting, the central portion supply flow rate is made larger than the peripheral portion supply flow amount, and the amount of the solvent per unit area in the central portion of the wafer W during the resist coating is The amount of the solvent per unit area at the peripheral edge of the surface may be larger.

By forming the distribution of the amount of the solvent in the plane of the wafer W in this way, the fluidity of the resist supplied to the central portion of the wafer W is increased, and the resist W is rapidly spread to the peripheral portion of the wafer W to increase the throughput. Can be improved. The film thickness of the resist film in each part of the wafer W varies depending on the amount of the solvent supplied to each part of the wafer W at the time of applying the resist. Therefore, in order to make the film thickness uniform between the central portion and the peripheral portion of the wafer W, the central portion supply flow rate and the peripheral portion supply flow rate may be set to different values. Further, since the length in the circumferential direction of the wafer W increases toward the peripheral edge side of the wafer W, the solvent supplied at the peripheral edge of the wafer W can be increased by making the peripheral edge supply flow rate larger than the central portion supply flow rate. It is also possible to prevent the amount of the solvent from being insufficient and prevent the amount of the solvent supplied at the center of the wafer W from becoming excessive.

FIG. 14 shows another configuration example of the solvent discharge unit 41. In the solvent discharge part 41, a vibrator 71 and a heater 72 are embedded. The vibrator 71 is made of, for example, a piezoelectric material such as piezoelectric ceramics, and a voltage is supplied from a voltage supply unit (not shown) while the solvent discharge unit 41 moves between the central part and the peripheral part of the wafer W during the pre-wetting. Vibrates when applied. Due to the vibration of the vibrator 71, the solvent discharge section 41 vibrates. Further, the heater 72 generates heat so that the facing surface 42 of the solvent discharge portion 41 has a predetermined temperature.

When prewetting is performed as described above using the solvent discharge portion 41 of FIG. 14, the solvent 40 is pushed into the recess 62 of the wafer W, and the solvent thus pushed in by the vibration of the solvent discharge portion 41. 40 vibrates. By this vibration, the bubbles 65 remaining in the recess 62 are ejected upward from the recess 62 and removed from the recess 62. In other words, the concave portion 62 can be more reliably filled with the solvent 40 by the action of the vibrator 71. Further, since the facing surface 42 is heated by the heater 72, the solvent 40 supplied from the discharge port 43 is heated and has relatively high wettability with respect to the facing surface 42. Therefore, since the solvent 40 is surely pushed and spread on the wafer W by the facing surface 42, the recess 62 can be more reliably filled with the solvent 40. For example, a heater may be provided in the pipe 44 so that the heated solvent 40 is discharged from the discharge port 43 so as to have good wettability with respect to the facing surface 42.

By the way, as described with reference to FIGS. 5 to 7, after the solvent discharge unit 41 is moved from the central portion of the rotating wafer W to the peripheral portion, the rotating portion of the wafer W is moved from the peripheral portion to the central portion of the wafer W. The solvent 40 may be more reliably filled in the recess 62 by performing pre-wetting by moving to. That is, the solvent discharge unit 41 may be reciprocated between the central portion and the peripheral portion of the wafer W. Thus, when performing pre-wetting by reciprocating the solvent discharge part 41, the solvent 40 is supplied to the wafer W when the solvent discharge part 41 is moved from the central part of the wafer W to the peripheral part. While the solvent discharge part 41 moves from the peripheral part of the wafer W to the center part, the solvent 40 may be discharged from the solvent discharge part 41 or may not be discharged. Moreover, you may perform prewetting by making the movement direction of the solvent discharge part 41 reverse with the operation | movement demonstrated in FIGS. That is, the pre-wetting may be performed by moving the solvent discharge portion 41 in the state where the solvent 40 is discharged from the peripheral portion of the rotating wafer W to the central portion.

Further, as described with reference to FIGS. 5 to 7, after rotating the wafer W clockwise and moving the solvent discharge portion 41 onto the peripheral portion of the wafer W, the wafer W is rotated counterclockwise as shown in FIG. Alternatively, the pre-wetting may be performed by moving the solvent discharge portion 41 between the central portion and the peripheral portion of the wafer W during the counterclockwise rotation. That is, the rotation direction may be changed with respect to the solvent discharge unit 41. In the example shown in FIG. 15, while the wafer W is rotating counterclockwise, the solvent ejection unit 41 is moved from the peripheral part of the wafer W to the central part, but from the central part of the wafer W to the peripheral part. You may move. Since the solvent 40 is pushed into the concave portion 62 from different directions during the clockwise rotation of the wafer W and the counterclockwise rotation of the wafer W, the discharge of the bubbles 65 from the concave portion 62 can be promoted. it can. After the wafer W is rotated in the clockwise direction and the solvent discharge unit 41 is moved, the bubbles 65 are naturally discharged from the recess 62 until the wafer W is rotated in the counterclockwise direction and the solvent discharge unit 41 is moved. For example, a standby period of several seconds to several tens of seconds may be provided for discharging. In the standby period, for example, rotation of the wafer W, movement of the solvent discharge unit 41 on the wafer W, and discharge of the solvent 40 onto the wafer W are stopped.

FIG. 16 shows a solvent discharge unit 73 which is another configuration example of the solvent discharge unit. The solvent discharge unit 73 will be described mainly with respect to the difference from the solvent discharge unit 41 described above. The solvent discharge unit 73 is connected to the arm 51 via the rotation mechanism 74 and is perpendicular to the rotation mechanism 74. It is rotated around the central axis. A concave portion 75 is formed in the upper portion of the solvent discharge portion 73, and the upstream end of the flow path 76 is opened on the bottom surface of the concave portion 75. The downstream end of the flow path 76 is connected to the discharge port 43.

Further, a solvent discharge nozzle 77 is supported on the arm 51, and the downstream side of the pipe 44 for supplying the solvent 40 is connected to the solvent discharge nozzle 77. The solvent discharge nozzle 77 discharges the solvent 40 toward the concave portion 75 of the rotating or non-rotating solvent discharge portion 73. The solvent 40 is discharged from the discharge port 43 of the solvent discharge unit 73 through the flow path 76. Similarly to the solvent discharge unit 41, the solvent discharge unit 73 moves between the central portion and the peripheral portion of the wafer W, and the solvent discharge unit 73 is rotated by the rotation mechanism 74 during the movement. Due to the rotation of the solvent discharge portion 73, the solvent 40 below the facing surface 42 is agitated, and a liquid flow is formed in the concave portion 62 on the surface of the wafer W. Can expel bubbles.

By the way, in the solvent discharge part 41, although the solvent discharge nozzle which discharges a solvent to the wafer W is provided in the pressing part for pressing the solvent 40 on the surface of the wafer W, these are good also as a different body. 17 and 18 show a configuration example in which the pressing portion and the solvent discharge nozzle are separately provided as described above. The arm 51 is provided with the solvent discharge nozzle 77 so that the solvent 40 can be discharged vertically downward. The arm 51 is provided with a pressing portion 78 having the same shape as the solvent discharge portion 41 except that the discharge port 43 is not provided.

During the rotation of the wafer W, the solvent discharge nozzle 77 discharges the solvent 40 to the center of the wafer W. As the arm 51 moves, the discharge position of the solvent 40 moves onto the peripheral edge of the wafer W as shown in FIG. 18, and the pressing portion 78 follows the discharge position onto the peripheral edge of the wafer W. Moving. Accordingly, the solvent 40 is supplied to the front side of the moving pressing portion 78, and the solvent 40 is pressed against the surface of the wafer W by the pressing portion 78 to perform prewetting.

By the way, it is not restricted to performing prewetting so that the solvent discharge part 41 may move on the wafer W. The opposing surface 42 is formed so that the diameter thereof is the same as or longer than the radius of the wafer W. Then, as shown in FIG. 19, pre-wetting may be performed by disposing the solvent discharge portion 41 so that the entire surface of the wafer W passes under the facing surface 42 in a state where the entire surface of the wafer W is stationary by the rotation of the wafer W. . Further, the pre-wetting is not limited to rotating the wafer W. A solvent discharging unit 41 configured as shown in FIG. 19 is provided with a moving mechanism that moves along the circumferential direction of the wafer W, and pre-wetting can be performed by moving the solvent discharging unit 41 without rotating the wafer W. it can.

Further, when the solvent discharge unit 41 is reciprocated as described above, when the solvent discharge unit 41 is moved from the central portion to the peripheral portion of the wafer W, the solvent 40 is surely pushed into the concave portion 62. Therefore, the distance between the facing surface 42 and the surface of the wafer W is set to a relatively small H3 (upper stage in FIG. 20). When the solvent discharge unit 41 is moved from the periphery of the wafer W to the center of the wafer W, the distance between the facing surface 42 and the surface of the wafer W becomes H4 (> H3), which is relatively large. The solvent discharge part 41 may be moved while being discharged to push the solvent 40 into the recess 62 and form a relatively large liquid film of the solvent 40 (lower stage in FIG. 20). By making the liquid film of the solvent relatively large, the resist is spread quickly during spin coating of the resist.

The coating solution is not limited to a resist, and may be a chemical solution for forming an antireflection film or a chemical solution for forming an insulating film. Further, the present invention is not limited to the above embodiments, and the embodiments can be appropriately changed or combined with each other.

W wafer 1 resist film forming apparatus 10 control unit 21 spin chuck 22 rotation mechanism 30 resist 31 resist discharge nozzle 40 solvent 41 solvent discharge unit 52 moving mechanism

Claims (12)

In a coating film forming apparatus for forming a coating film by supplying a coating liquid to a substrate having a concave pattern formed on the surface,
A substrate holding part for horizontally holding the substrate;
A surface treatment liquid supply nozzle for supplying a surface treatment liquid to the surface of the substrate to improve wettability to the coating liquid on the surface of the substrate;
By moving relatively in the horizontal direction with respect to the substrate in a state of being close to the surface of the substrate, the surface treatment liquid supplied to the surface of the substrate is pressed against the surface of the substrate, and the inside of the concave pattern A pressing part for supplying to
A coating solution supply nozzle for supplying the coating solution to the surface of the substrate after the surface treatment solution is pressed by the pressing unit;
A coating film forming apparatus comprising: A horizontal movement mechanism for moving the pressing portion horizontally;
A substrate rotating mechanism for rotating the substrate holding part around a vertical axis,
2. The coating according to claim 1, wherein the pressing unit presses the surface treatment liquid against the substrate by horizontally moving the surface of the substrate rotated by the substrate rotating mechanism by the horizontal moving mechanism. Film forming device. 3. The coating film forming apparatus according to claim 2, wherein the pressing portion reciprocates between a central portion side and a peripheral portion side on the surface of the substrate to press the surface treatment liquid against the substrate. . The pressing portion includes a facing surface facing the surface of the substrate,
The said surface treatment liquid supply nozzle is provided in the said pressing part so that the discharge port of the said surface treatment liquid opened to the said opposing surface may be provided, The one of Claim 1 thru | or 3 characterized by the above-mentioned. The coating film forming apparatus as described. A nozzle moving mechanism for moving the surface treatment liquid supply nozzle so that a position to which the surface treatment liquid is supplied moves between a center part and a peripheral part of the substrate;
A flow rate adjusting unit that adjusts the flow rate of the surface treatment liquid supplied from the surface treatment liquid supply nozzle,
The surface treatment liquid supply nozzle supplies the surface treatment liquid to a central portion of the substrate at a first flow rate and supplies the surface treatment liquid to a peripheral portion of the substrate at a second flow rate larger than the first flow rate. The coating film forming apparatus according to claim 1, wherein a coating film forming apparatus is provided. 6. The coating film forming apparatus according to claim 1, wherein the pressing portion includes a rotation facing surface that faces the surface of the substrate and rotates about a vertical axis. 7. The coating film forming apparatus according to claim 1, further comprising a vibrator that vibrates the pressing portion. The coating film forming apparatus according to claim 1, further comprising a temperature adjusting unit that adjusts a temperature of the pressing unit.   The substrate rotation mechanism is provided, the substrate rotation mechanism rotates the substrate in the first direction with respect to the pressing unit in order to press the surface treatment liquid by the pressing unit; and The coating film forming apparatus according to claim 1, wherein the pressing unit is rotated in a second direction opposite to the first direction.   The coating film forming apparatus according to claim 1, wherein the coating solution has a viscosity of 400 cP or more. In a coating film forming method of forming a coating film on a substrate having a concave pattern formed on the surface,
A step of holding the substrate horizontally in a substrate holding portion;
Next, a step of supplying a surface treatment liquid to the surface of the substrate from a surface treatment liquid supply nozzle for enhancing the wettability with respect to the coating liquid on the surface of the substrate;
Subsequently, the surface treatment liquid supplied to the surface of the substrate is pressed against the surface of the substrate by moving the pressing portion in a horizontal direction relative to the substrate in a state of being close to the surface of the substrate. Supplying into the concave pattern
Then, the step of supplying the coating liquid to the substrate to form the coating film,
A coating film forming method comprising: In a storage medium storing a computer program used in a coating film forming apparatus for forming a coating film on a substrate having a concave pattern formed on the surface,
12. A storage medium, wherein the computer program includes a group of steps so as to execute the coating film forming method according to claim 11.

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