JP2018063399A - Display device, and method for driving display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display device that can switch the display mode, or a display device that can switch between normal display and see-through display.SOLUTION: A display device having a light emitting element and a liquid crystal element is driven so as to be switched between a first mode in which an image is displayed using the light emitting element in a state where the liquid crystal element blocks external light, and a second mode in which an image is displayed using the light emitting element, by superposing on a transmission image having transmitted through the liquid crystal element, in a state where the liquid crystal element allows the external light to transmit through.SELECTED DRAWING: Figure 1

Description

  One embodiment of the present invention relates to a display device, a method for manufacturing the display device, and a method for driving the display device.

  Note that one embodiment of the present invention is not limited to the above technical field. Technical fields of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, and driving methods thereof , Or a method for producing them, can be mentioned as an example.

  Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A transistor, a semiconductor circuit, an arithmetic device, a memory device, or the like is one embodiment of a semiconductor device. In addition, an imaging device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like) and an electronic device may include a semiconductor device.

  In recent years, diversification of display devices has been demanded. One of them is a display device having a so-called see-through function in which a display portion has light transparency and the other side is visible. Such a display device having a see-through function includes a windshield of a vehicle, a window glass of a building such as a house or a building, a glass or case of a store window of a store, or an information terminal device or a head mount such as a mobile phone or a tablet terminal. Application to various uses such as a wearable display such as a display or a head-up display used in an automobile or an aircraft is expected.

  In addition, display devices to which an organic EL (Electro Luminescence) element or a liquid crystal element is applied are known. In addition, a light-emitting device including a light-emitting element such as a light-emitting diode (LED), electronic paper that performs display by an electrophoresis method, and the like can be given as examples of the display device.

  The basic structure of the organic EL element is such that a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. Light emission can be obtained from the light-emitting organic compound by applying a voltage to this element. A display device to which such an organic EL element is applied can realize a thin, lightweight, high-contrast display device with low power consumption.

  Further, an active matrix liquid crystal display device using a transistor having a metal oxide as a channel formation region as a switching element connected to each pixel electrode is known (Patent Document 1 and Patent Document 2).

JP 2007-123861 A JP 2007-96055 A

  In recent years, various image display technologies such as virtual reality (VR) or augmented reality (AR) have been actively developed. For this reason, display devices are required not only to display images but also to have various functions.

  An object of one embodiment of the present invention is to provide a display device capable of switching display methods. Another object is to provide a display device capable of switching between normal display and see-through display. Another object is to provide a display device with high safety.

  Another object is to provide a novel display device or a driving method thereof. Another object is to provide a highly reliable display device. Another object is to provide a lightweight display device. Another object is to provide a thin display device.

  Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these can be extracted from the description, drawings, claims, and the like.

  One embodiment of the present invention is a display device including a first light-emitting element, a second light-emitting element, and a liquid crystal element. The first light emitting element and the second light emitting element are provided separately on the same surface. The liquid crystal element is provided on a different surface from the first light-emitting element. The liquid crystal element has a portion overlapping with a region between the first light emitting element and the second light emitting element. The liquid crystal element is characterized in that it transmits light when an electric field is applied and shields light when no electric field is applied.

  In the above, it is preferable to include the first transistor electrically connected to the first light-emitting element.

  In the above, it is preferable to include a second transistor electrically connected to the liquid crystal element.

  In the above, the liquid crystal element is preferably a passive or segment liquid crystal element.

  In the above, it is preferable to include the first substrate, the second substrate, and the insulating layer. At this time, the insulating layer is preferably located between the first substrate and the second substrate. The first light-emitting element and the second light-emitting element are preferably positioned between the first substrate and the insulating layer, and the liquid crystal element is preferably positioned between the second substrate and the insulating layer.

  In the above, it is preferable that the semiconductor device include a first transistor that is electrically connected to the first light-emitting element and a wiring that is electrically connected to the liquid crystal element. At this time, the first transistor and the wiring are preferably positioned between the insulating layer and the first substrate, and the wiring is preferably electrically connected to the liquid crystal element through the opening of the insulating layer.

  In the above, it is preferable that the semiconductor device include a first transistor that is electrically connected to the first light-emitting element and a wiring that is electrically connected to the liquid crystal element. At this time, the first transistor and the wiring are located between the insulating layer and the second substrate, and the first transistor is electrically connected to the first light-emitting element through the opening of the insulating layer. It is preferable to do.

  Further, in the above structure, a second transistor which is electrically connected to the wiring may be used.

  In the above, the first light-emitting elements are preferably arranged with a definition of 500 ppi or more and 5000 ppi or less.

  Another embodiment of the present invention is a method for driving a display device including a light-emitting element and a liquid crystal element. Here, the first mode in which an image is displayed by the light emitting element in a state where the liquid crystal element shields external light, and the light emission is superimposed on the transmission image transmitted through the liquid crystal element in a state in which the liquid crystal element transmits external light. The second mode in which an image is displayed by an element is switched.

  Another embodiment of the present invention is a method for driving a display device including a light-emitting element, a liquid crystal element, and an optical sensor. Here, in accordance with the information acquired by the optical sensor, the liquid crystal element displays a first mode in which an image is displayed by the light emitting element while the liquid crystal element blocks external light, and the liquid crystal element transmits the external light. The second mode in which an image is displayed by a light emitting element is superimposed on the transmission image transmitted through the light emitting element.

  According to one embodiment of the present invention, a display device that can switch display methods can be provided. Alternatively, a display device that can switch between normal display and see-through display can be provided. Alternatively, a highly safe display device can be provided.

  Alternatively, a novel display device or a driving method thereof can be provided. Alternatively, a highly reliable display device can be provided. Alternatively, a lightweight display device can be provided. Alternatively, a display device with a small thickness can be provided.

  Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description, drawings, claims, and the like.

2 shows a configuration example of a display device. 2 shows a configuration example of a display device. 2 shows a configuration example of a display device. 2 shows a configuration example of a display device. 2 shows a configuration example of a display device. 2 shows a configuration example of a display device. The block diagram of an electronic device and the example of usage 6 is a flowchart according to a driving method of an electronic device. A configuration example of a display panel. A configuration example of a display panel. A configuration example of a display panel. A configuration example of a display panel. A configuration example of a display panel. A configuration example of a display panel. A configuration example of a display panel.

  Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

  Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

  Note that in each drawing described in this specification, the size, the layer thickness, or the region of each component is exaggerated for simplicity in some cases. Therefore, it is not necessarily limited to the scale.

  In the present specification and the like, ordinal numbers such as “first” and “second” are used for avoiding confusion between components, and are not limited numerically.

  A transistor is a kind of semiconductor element, and can realize amplification of current and voltage, switching operation for controlling conduction or non-conduction, and the like. The transistor in this specification includes an IGFET (Insulated Gate Field Effect Transistor) and a thin film transistor (TFT: Thin Film Transistor).

  In the following, expressions indicating the direction such as “up” and “down” are basically used in combination with the direction of the drawing. However, for the purpose of facilitating the description and the like, the direction indicated by “upper” or “lower” in the specification may not match the drawing. As an example, when explaining the stacking order (or forming order) of a laminated body or the like, the surface (formation surface, support surface, adhesive surface, flat surface, etc.) on the side where the laminated body is provided in the drawing Even if it is positioned above the laminated body, the direction may be expressed as “down”, the opposite direction may be expressed as “up”, and the like.

  Note that in this specification, an EL layer refers to a layer including at least a light-emitting substance (also referred to as a light-emitting layer) or a stacked body including a light-emitting layer, which is provided between a pair of electrodes of a light-emitting element.

  In this specification and the like, a display panel which is one embodiment of a display device has a function of displaying (outputting) an image or the like on a display surface. Therefore, the display panel is one mode of the output device.

  Further, in this specification and the like, a display panel substrate, for example, a connector such as a FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) is attached, or the substrate is integrated with a COG (Chip On Glass) method or the like. In some cases, is mounted a display panel module, a display module, or simply a display panel.

(Embodiment 1)
In this embodiment, a display device of one embodiment of the present invention will be described.

  One embodiment of the present invention is a display device in which light-emitting elements that emit visible light are arranged in a matrix. An image can be displayed on the display surface side of the display device by the light emitting element. In addition, the display device includes a liquid crystal element so as to overlap with a region between two adjacent light emitting elements. The liquid crystal element can transition between two states, a state where visible light is transmitted (transmission state) and a state where visible light is blocked (non-transmission state).

  When the liquid crystal element is in a transmissive state, part of the external light incident from the side opposite to the display surface side passes through the region between two adjacent light emitting elements and is transmitted to the display surface side. Therefore, at this time, the image projected by the light emitting element can be displayed in a superimposed manner on the transmitted image of the transmitted external light. Thereby, see-through display can be performed.

  On the other hand, when the liquid crystal element is in a non-transmissive state, external light does not pass through the display device, so that an image projected by the light emitting element can be displayed. Further, by blocking the transmission of external light and using a light emitting element, display with extremely high contrast can be performed and clearer display can be performed. For example, when a VR image is displayed, a more immersive and realistic display can be performed.

  One embodiment of the present invention can thus switch between the two display modes. More specifically, it is possible to switch between two display modes: a transmission mode (see-through mode) in which the scenery on the other side of the display device is transmitted, and a light emission mode (emission mode) in which display with high contrast is performed by the light emitting element.

  For example, when applied to a wearable electronic device such as a goggle type or a glasses type, the display device can be switched freely between AR display and VR display. Furthermore, in the AR display, it is possible to display an image superimposed on a transmission image without using an image captured by a camera, so that a sense of reality is further increased.

  Further, by applying the display device to a showcase, a store window, or the like and switching between the transmission mode and the light emission mode, the advertising effect can be further enhanced.

  Note that the display device of one embodiment of the present invention is not limited to VR, AR use, or commercial use such as digital signage, and can be used for various uses.

  Here, a light-emitting element included in the display device can include an element that has a light source and displays using light from the light source. In particular, an electroluminescent element that can extract light emitted from a light-emitting substance by applying an electric field is preferably used. The light emitted from such a pixel is not affected by the brightness or chromaticity of the light, and therefore has high color reproducibility (wide color gamut) and high contrast, that is, vivid display. be able to.

  For example, a self-luminous light emitting element such as an OLED (Organic Light Emitting Diode), an LED (Light Emitting Diode), a QLED (Quantum-dot Light Emitting Diode), or a semiconductor laser can be preferably used as the light emitting element. .

  Here, the liquid crystal element included in the display device is preferably a so-called normally black liquid crystal element that shields light in a state where an electric field is not applied. Accordingly, contrast in the light emission mode can be increased, and in the light emission mode, it is not necessary to apply an electric field to the liquid crystal element, so that power consumption can be reduced.

  The display device preferably has a structure in which a light emitting element is provided on the display surface side and a liquid crystal element is provided on the opposite side (back side) to the display surface side through an insulating layer. Thereby, since the number of layers located on the optical path of the light emitted from the light emitting element can be reduced, the light extraction efficiency can be improved and the color reproducibility can be improved.

  It is preferable that an active matrix system in which one or more transistors are connected to each of the plurality of light emitting elements is applied. At this time, a structure in which both a transistor electrically connected to the light-emitting element and a wiring to which the liquid crystal element is connected is preferably provided on one surface side of the insulating layer. At this time, it is preferable that any one of the light-emitting element and the transistor, or the liquid crystal element and the wiring is electrically connected through an opening provided in the insulating layer.

  One liquid crystal element may be provided in each transmission region. Alternatively, the display area may be divided into several areas, and one liquid crystal element may be provided for each area where a plurality of light-emitting elements are provided. Alternatively, one liquid crystal element may be provided over the entire display region. By adopting a structure in which a plurality of liquid crystal elements are provided, it is possible to perform a display in which a region displayed in the transmission mode and a region displayed in the light emission mode are mixed. For example, partial see-through display can be performed.

  In the case of including a plurality of liquid crystal elements, a liquid crystal element of a segment method, a passive matrix method, or an active matrix method can be used. In the segment method and the passive matrix method, the liquid crystal element can be connected to the wiring in the display region. In the active matrix method, one or more transistors can be connected to each liquid crystal element in the display region.

  The light emitting element is preferably arranged in the display region with extremely high definition. The higher the definition, the more preferable, but specifically, 300 ppi or more and 10,000 ppi or less, preferably 500 ppi or more and 5000 ppi or less, more preferably 700 ppi or more and 4000 ppi or less, more preferably 1000 ppi or more and 3000 ppi or less, and arranged in the display region. It is preferable that By using such a high-definition display device, it can be suitably used for wearable electronic devices such as goggles and glasses.

  Note that when the assumed viewing distance is relatively long (for example, 1 m or more), such as when applied to digital signage or a large display device, it is not necessary to have high definition. For example, the definition is 1 ppi or more and less than 300 ppi. You can also

  Hereinafter, more specific examples will be described with reference to the drawings.

[Configuration example]
FIG. 1A illustrates an example of a cross-sectional configuration of the display device 10.

  The display device 10 includes a functional layer 45, an insulating layer 81, an insulating layer 83, a light emitting element 90, a liquid crystal element 40, and the like between the substrate 21 and the substrate 31. A polarizing plate 39 a is provided outside the substrate 21, and a polarizing plate 39 b is provided outside the substrate 31. The substrate 21 side corresponds to the display surface side of the display device 10.

  The light-emitting element 90 includes a conductive layer 91, a conductive layer 93, and an EL layer 92 sandwiched therebetween. The EL layer 92 is a layer containing at least a light-emitting substance. The conductive layer 91 is disposed for each pixel (also referred to for each sub-pixel) and functions as a pixel electrode. The conductive layer 93 is disposed over a plurality of pixels. The conductive layer 93 is connected to a wiring to which a constant potential is supplied in a region not shown, and functions as a common electrode.

  The conductive layer 91 included in the light emitting element 90 reflects visible light, and the conductive layer 93 transmits visible light. Therefore, the light emitting element 90 emits light to the substrate 21 side (that is, the side opposite to the formation surface side) by applying a voltage between the conductive layer 91 and the conductive layer 93. This is a (top emission type) electroluminescent element.

  Alternatively, the light emitting element 90 may be a dual emission type (double-sided light emitting type) light emitting element that emits light to both the substrate 21 side and the substrate 31 side. For example, both the conductive layer 91 and the conductive layer 93 can be configured to transmit visible light. At this time, since the light-emitting element 90 transmits visible light, the light-emitting element 90 can function as a part of the transmission region.

  The liquid crystal element 40 includes a conductive layer 23, a conductive layer 25, and a liquid crystal 24 sandwiched therebetween. The conductive layer 23 and the conductive layer 25 each transmit visible light. Therefore, the liquid crystal element 40 is a transmissive liquid crystal element capable of controlling the amount of visible light that is transmitted.

  Here, the conductive layer 23 and the conductive layer 25 are connected to different wirings in a region not shown. At this time, a fixed potential is supplied to one of the two wirings, and a signal (potential) for controlling the liquid crystal element is supplied to the other.

  Here, a configuration in which the conductive layer 23 and the conductive layer 25 are arranged so as to overlap with the plurality of light-emitting elements 90 is illustrated. That is, the liquid crystal element 40 is provided over a plurality of pixels.

  The functional layer 45 is a layer including a circuit that drives the light emitting element 90. For example, in the functional layer 45, a pixel circuit is configured by a transistor, a capacitor, a wiring, an electrode, and the like.

  An insulating layer 83 is provided between the functional layer 45 and the conductive layer 23. In a region not shown, the conductive layer 23 may be electrically connected to a wiring provided on the substrate 31 side of the insulating layer 83. Alternatively, in a region not shown, the conductive layer 23 may be electrically connected to a wiring or the like provided on the substrate 21 side with respect to the insulating layer 83 through an opening provided in the insulating layer 83.

  An insulating layer 81 is provided between the functional layer 45 and the conductive layer 91. The conductive layer 91 and the functional layer 45 are electrically connected through an opening provided in the insulating layer 81. Thereby, the functional layer 45 and the light emitting element 90 are electrically connected.

  An insulating layer 84 is provided so as to cover an end portion of the conductive layer 91, and an EL layer 92 is provided so as to cover a part of the insulating layer 84 and a part of the conductive layer 91. A conductive layer 93 is provided to cover the EL layer 92.

  An adhesive layer 89 is provided between the substrate 21 and the conductive layer 93. It can be said that the substrate 21 and the substrate 31 are bonded together by the adhesive layer 89. The adhesive layer 89 also functions as a sealing layer that seals the light emitting element 90.

  In this manner, by arranging two types of display elements (the liquid crystal element 40 and the light emitting element 90) and the functional layer 45 that drives the light emitting element between the pair of substrates, the thickness can be reduced. .

  Further, the liquid crystal element 40 and the light emitting element 90 are arranged so as to sandwich the insulating layer 83, the functional layer 45, and the like, so that, for example, a display panel having a light emitting element and a display panel having a liquid crystal element are attached. Compared to the combined configuration, the distance between the liquid crystal element 40 and the light emitting element 90 can be reduced, and the number of layers existing therebetween can be reduced. Thereby, a transmitted image can be made clearer.

  For example, the distance between the upper surface of the conductive layer 23 of the liquid crystal element 40 and the lower surface of the conductive layer 91 of the light emitting element 90 is 20 nm or more and less than 30 μm, preferably 50 nm or more and less than 10 μm, more preferably 100 nm or more and 5 μm. Less than.

  A colored layer CFR, a colored layer CFG, and a colored layer CFB are provided on the substrate 31 side of the substrate 21 so as to overlap with the light emitting element 90, respectively. The colored layer CFR, the colored layer CFG, and the colored layer CFB function as color filters that transmit, for example, red, green, or blue, respectively. Accordingly, color display can be performed using the light emitting element 90.

  In FIG. 1A, the EL layer 92 is provided uniformly over the plurality of light emitting elements 90. Here, each light emitting element 90 is a light emitting element that emits white light. Therefore, the light emitted from the light emitting element 90 provided with the colored layer CFR is transmitted through the colored layer CFR and emitted to the display surface side as red light 20R. Similarly, green light 20G is emitted from the light emitting element 90 provided with the colored layer CFG, and blue light 20B is emitted from the light emitting element 90 provided with the colored layer CFB.

  In addition, a region between two adjacent light emitting elements 90 has a region where a light-shielding member is not provided. The region functions as a transmissive region, and when the liquid crystal element 40 is in a transmissive state, the transmitted light 20t transmitted through the liquid crystal element 40 is emitted from the substrate 31 side to the substrate 21 side. Therefore, the transmission image behind the display device 10 can be visually recognized when viewed from the display surface side.

  Moreover, it is preferable that each colored layer is not provided in the transmission region. Thereby, it can prevent that a transmitted image will be colored.

  The liquid crystal element 40 is preferably a so-called normally black liquid crystal element that blocks visible light when an electric field is not applied. In addition, it is preferable to adjust the orientation of the polarizing plates 39a and 39b so that a normally black liquid crystal element is obtained. As the polarizing plate, a linear polarizing plate can be used. Or you may use the circularly-polarizing plate which laminated | stacked the linearly-polarizing plate and the quarter wavelength phase difference plate. By applying the circularly polarizing plate to the polarizing plate 30a located on the display surface side, external light reflection can be suppressed. Note that the polarizing plate 30a and the polarizing plate 30b may be positioned so as to sandwich the liquid crystal element 40, and the position is not limited to FIG. For example, the polarizing plate 39 a may be disposed between the conductive layer 23 and the substrate 21.

  Further, depending on the configuration of the liquid crystal element 40, either one or both of the polarizing plate 39a and the polarizing plate 39b may be omitted. For example, when a guest-host type liquid crystal element is applied as the liquid crystal element 40, the polarizing plate 39a can be eliminated. Thereby, the light extraction efficiency of the light emitting element 90 can be increased. Further, when a dispersive liquid crystal element is applied as the liquid crystal element 40, a configuration in which both polarizing plates are not provided may be employed. Thereby, the brightness of the transmitted light in the transmission mode can be increased.

  Various optical members can be arranged outside the substrate 21. Examples of the optical member include the polarizing plate and the retardation plate, a light diffusing layer (such as a diffusing film), an antireflection layer, and a light collecting film. Further, on the outside of the substrate 21, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult to adhere dirt, a hard coat film that suppresses the occurrence of scratches due to use, and the like may be disposed.

  Further, a touch sensor may be provided outside the substrate 21. Thereby, the structure containing the display apparatus 10 and the said touch sensor can be functioned as a touch panel.

  The display device 10 sets the liquid crystal element 40 in a non-transmissive state, thereby displaying a light emission mode (Emission Mode) in which an image is displayed by the light emitting element, and sets the liquid crystal element 40 in a transmissive state, thereby transmitting the image by the light emitting element to a transmission image. It is possible to switch between a transparent mode (see-through mode, see-through mode) displayed on the screen.

  FIG. 1B shows a schematic diagram in the case of displaying in the light emission mode.

  The light emitting element 90 can emit light 20e on the display surface side and display an image.

  On the other hand, the liquid crystal element 40 is in a state of shielding visible light. The light 20in incident from the back surface of the display device 10 is polarized by the polarizing plate 39b, passes through the liquid crystal element 40, and is blocked by the polarizing plate 39a.

  Thereby, in the light emission mode, the light 20 in incident from the back surface of the display device 10 does not reach the user, so that display with high contrast can be performed. Such a mode can also be referred to as a VR mode.

  FIG. 1C shows a schematic diagram in the case of displaying in the transmission mode.

  The light emitting element 90 can emit the light 20e to the display surface side and display an image as in the light emission mode.

  Further, the liquid crystal element 40 is in a state of transmitting visible light. The light 20in incident from the back surface of the display device 10 passes through the polarizing plate 39b, the liquid crystal element 40, and the polarizing plate 39a, and is emitted to the display surface side as transmitted light 20t.

  Thereby, in the transmission mode, both the light 20e from the light emitting element 90 and the transmitted light 20t can be visually recognized. That is, the image displayed by the light emitting element 90 can be displayed so as to be superimposed on the scenery (transmission image) on the back surface of the display device 10. Such a mode can also be referred to as an AR mode.

  The above is the description of the configuration example.

[Modification]
Hereinafter, a configuration example in which a part of the configuration illustrated in FIG.

[Modification 1]
In the above description, the light emitting element 90 that can emit white light and the colored layer CFR, the colored layer CFG, or the colored layer CFB are combined to perform color display by the light emitting element 90; A case where a light emitting element capable of emitting light of green, blue, or the like is used will be described.

  FIG. 2A shows a light emitting element 90R that emits red light 20R, a light emitting element 90G that emits green light 20G, and a light emitting element 90B that emits blue light 20B, instead of the light emitting element 90 in FIG. The example which has is shown. Further, the colored layer CFR, the colored layer CFG, and the colored layer CFB shown in FIG. 1A are not provided.

  The light-emitting element 90R, the light-emitting element 90G, and the light-emitting element 90B each include an EL layer 92R, an EL layer 92G, or an EL layer 92B. A conductive layer 93 is provided to cover the EL layer 92R, the EL layer 92G, and the EL layer 92B.

  With such a structure, the light extraction efficiency of each of the light emitting element 90R, the light emitting element 90G, and the light emitting element 90B can be increased, and power consumption can be reduced.

  Note that only a part of the layers constituting the EL layer may be separately formed between the light emitting element 90R, the light emitting element 90G, and the light emitting element 90B, and the other layers may be used in common. For example, a configuration in which only the light emitting layer is separately formed may be employed. In addition, among the three color light emitting layers, a light emitting layer exhibiting a color with the shortest wavelength (for example, a light emitting layer exhibiting blue light) may be provided over other display elements. Thereby, the formation process of the light emitting element 90R, the light emitting element 90G, and the light emitting element 90B can be simplified.

[Modification 2]
Although the configuration in which the liquid crystal element 40 is provided over a plurality of pixels has been described above, the liquid crystal element 40 may be disposed for each pixel.

  FIG. 2B shows an example having a plurality of liquid crystal elements 40 each having an island-shaped conductive layer 23. Thereby, the transmission mode and the light emission mode can be individually switched for each transmission region.

  2B includes a functional layer 45a and a functional layer 45b. The functional layer 45a includes a circuit for driving the light emitting element. The functional layer 45b functions as a pixel circuit that controls driving of the liquid crystal element 40 and includes at least one transistor. The conductive layer 23 is electrically connected to the functional layer 45 b through an opening provided in the insulating layer 83. With such a configuration, the liquid crystal element 40 can be a liquid crystal element to which an active matrix method is applied. Note that in the case where the functional layer 45b includes only a wiring without a transistor, the liquid crystal element 40 can be a liquid crystal element to which a segment method or a passive matrix method is applied.

  Note that, here, a configuration in which one liquid crystal element 40 is provided for each light emitting element 90 is shown; however, a configuration in which one liquid crystal element 40 is provided for a plurality of light emitting elements 90 may be employed.

[Pixel Arrangement Method Example 1]
Hereinafter, an example of a pixel arrangement method will be described.

  FIG. 3A shows a schematic top view when one pixel 30 is viewed from the display surface side. The pixel 30 includes a light emitting element 90R, a light emitting element 90G, a light emitting element 90G, a liquid crystal element 40, a wiring 95, a wiring 51, a wiring 52, a wiring 53, and the like. Note that although not explicitly shown here, wirings, transistors, electrodes, or the like may be provided in addition to those shown here.

  The wiring 51 functions as, for example, a scanning line. The wiring 52 functions as a signal line, for example. The wiring 53 functions as a wiring for supplying a potential to the light emitting element, for example. The wiring 51 and the wiring 52 have portions that intersect each other. Here, an example in which the wiring 53 is parallel to the wiring 51 is shown. The wiring 53 may be parallel to the wiring 51.

  In FIG. 3A, the light emitting element 90R, the light emitting element 90G, and the light emitting element 90G each have a strip shape that is long in the vertical direction and are arranged in stripes in the horizontal direction.

  As described in the configuration example and the like, the liquid crystal element 40 is located on the back side (the side opposite to the display surface) from each light emitting element and wiring. In FIG. 3A, when viewed from the display surface side, a hatching pattern is attached to an area where the liquid crystal element 40 can be visually recognized without overlapping with each light emitting element, wiring, and the like. Become. In the transmission mode, light incident from the back surface of the display device is transmitted from the transmission region.

  FIG. 3B illustrates an example in which the light-emitting element 90W is provided in addition to the light-emitting element 90R, the light-emitting element 90G, and the light-emitting element 90G. Further, in the example shown in FIG. 3B, in each pixel 30, two light emitting elements are arranged in two vertical rows and two horizontal rows. 3B, the pixel 30 is provided with two wirings 51, 52, and 53 each.

  The light emitting element 90W can be, for example, a light emitting element that emits white light. For example, in the case of applying the cross-sectional structure illustrated in FIG.

  In FIG. 3B, a region in which the liquid crystal element 40 is visible without overlapping with each light emitting element and each wiring is a transmission region.

  Here, as the ratio of the area of the transmissive region to the area of the display region is higher, the amount of transmitted light can be increased, but the area of the light emitting region is reduced. In addition, when the ratio of the area of the transmissive region is large, the user may feel dazzled when switching from the light emission mode to the transmissive mode. Therefore, it may be better that the ratio of the area of the transmission region is not too large. For example, the ratio of the area of the transmissive region to the area of the entire display region can be 1% to 50%, preferably 3% to 45%, and more preferably 5% to 40%. Thereby, it is possible to switch between the light emission mode and the transmission mode without making the user feel uncomfortable or dazzling.

[Pixel Arrangement Method Example 2]
Hereinafter, an example of a pixel arrangement method suitable for a high-definition display device will be described.

[Configuration example of pixel circuit]
FIG. 4A shows an example of a circuit diagram of the pixel unit 70. The pixel unit 70 includes two pixels (pixel 70a and pixel 70b). Further, the pixel unit 70 is connected with a wiring 51a, a wiring 51b, a wiring 52a, a wiring 52b, a wiring 52c, a wiring 52d, a wiring 53a, a wiring 53b, a wiring 53c, and the like.

  The pixel 70a includes a sub pixel 71a, a sub pixel 72a, and a sub pixel 73a. The pixel 70b includes a sub-pixel 71b, a sub-pixel 72b, and a sub-pixel 73b. The sub pixel 71a, the sub pixel 72a, and the sub pixel 73a include a pixel circuit 41a, a pixel circuit 42a, and a pixel circuit 43a, respectively. The sub-pixel 71b, the sub-pixel 72b, and the sub-pixel 73b have a pixel circuit 41b, a pixel circuit 42b, and a pixel circuit 43b, respectively.

  Each sub-pixel has a pixel circuit and a display element 60. For example, the subpixel 71 a includes a pixel circuit 41 a and a display element 60. Here, a case where a light emitting element such as an organic EL element is used as the display element 60 is shown.

  The wiring 51a and the wiring 51b each have a function as a gate line. The wiring 52a, the wiring 52b, the wiring 52c, and the wiring 52d each have a function as a signal line (also referred to as a data line). The wiring 53a, the wiring 53b, and the wiring 53c have a function of supplying a potential to the display element 60.

  The pixel circuit 41a is electrically connected to the wiring 51a, the wiring 52a, and the wiring 53a. The pixel circuit 42a is electrically connected to the wiring 51b, the wiring 52d, and the wiring 53a. The pixel circuit 43a is electrically connected to the wiring 51a, the wiring 52b, and the wiring 53b. The pixel circuit 41b is electrically connected to the wiring 51b, the wiring 52a, and the wiring 53b. The pixel circuit 42b is electrically connected to the wiring 51a, the wiring 52c, and the wiring 53c. The pixel circuit 43b is electrically connected to the wiring 51b, the wiring 52b, and the wiring 53c.

  As shown in FIG. 4A, by adopting a structure in which two gate lines are connected to one pixel, the number of source lines can be halved compared to the stripe arrangement. As a result, the number of ICs 17 used as the source drive circuit can be reduced by half, and the number of components can be reduced.

  In addition, it is preferable that a pixel circuit corresponding to the same color be connected to one wiring functioning as a signal line. For example, in the case where a signal whose potential is adjusted in order to correct variations in luminance between pixels is supplied to the wiring, the correction value may vary greatly for each color. Therefore, correction can be facilitated by making pixel circuits connected to one signal line all pixel circuits corresponding to the same color.

  Each pixel circuit includes a transistor 61, a transistor 62, and a capacitor 63. For example, in the pixel circuit 41a, the transistor 61 includes a gate electrically connected to the wiring 51a, one of a source and a drain electrically connected to the wiring 52a, and the other of the source and the drain connected to the gate of the transistor 62, and a capacitor. 63 is electrically connected to one of the electrodes. In the transistor 62, one of a source and a drain is electrically connected to one electrode of the display element 60, and the other of the source and the drain is electrically connected to the other electrode of the capacitor 63 and the wiring 53a. The other electrode of the display element 60 is electrically connected to a wiring to which the potential V1 is applied.

  Note that for other pixel circuits, as shown in FIG. 4A, a wiring to which the gate of the transistor 61 is connected, a wiring to which one of the source and drain of the transistor 61 is connected, and the other electrode of the capacitor 63 are connected. The configuration is the same as that of the pixel circuit 41a, except that the wiring to be used is different.

  In FIG. 4A, the transistor 61 functions as a selection transistor. The transistor 62 is connected in series with the display element 60 and has a function of controlling a current flowing through the display element 60. The capacitor 63 has a function of holding a potential of a node to which the gate of the transistor 62 is connected. Note that in the case where the leakage current in the off state of the transistor 61, the leakage current through the gate of the transistor 62, or the like is extremely small, the capacitor 63 need not be intentionally provided.

  Here, as illustrated in FIG. 4A, the transistor 62 preferably includes a first gate and a second gate which are electrically connected to each other. With such a structure having two gates, the current that can be passed through the transistor 62 can be increased. In particular, a high-definition display device is preferable because the current can be increased without increasing the size of the transistor 62, particularly the channel width.

  Note that the transistor 62 may have one gate. With such a structure, a process for forming the second gate is not necessary, and thus the process can be simplified as compared with the above. The transistor 61 may have two gates. With such a structure, the size of any transistor can be reduced. Further, the first gate and the second gate of each transistor can be electrically connected to each other. Alternatively, one gate may be electrically connected to a different wiring. In that case, the threshold voltage of the transistor can be controlled by changing the potential applied to the wiring.

  In addition, of the pair of electrodes of the display element 60, an electrode electrically connected to the transistor 62 corresponds to a pixel electrode (for example, the conductive layer 91). Here, FIG. 4A shows a structure in which an electrode electrically connected to the transistor 62 of the display element 60 is a cathode and an electrode on the opposite side is an anode. Such a configuration is particularly effective when the transistor 62 is an n-channel transistor. In other words, when the transistor 62 is on, the potential supplied from the wiring 53a becomes the source potential, so that the current flowing through the transistor 62 can be kept constant regardless of variations and fluctuations in the resistance of the display element 60. Alternatively, a p-channel transistor may be used as a transistor included in the pixel circuit.

[Example of pixel electrode arrangement]
FIG. 4B is a schematic top view illustrating an example of a method for arranging each pixel electrode and each wiring in the display region. The wiring 51a and the wiring 51b are alternately arranged. In addition, the wiring 52a, the wiring 52b, and the wiring 52c intersecting with the wiring 51a and the wiring 51b are arranged in this order. Each pixel electrode is arranged in a matrix along the extending direction of the wiring 51a and the wiring 51b.

  The pixel unit 20 includes a pixel 70a and a pixel 70b. The pixel 70a includes a pixel electrode 91R1, a pixel electrode 91G1, and a pixel electrode 91B1. The pixel 70b includes a pixel electrode 91R2, a pixel electrode 91G2, and a pixel electrode 91B2. The display area of one subpixel is located inside the pixel electrode of the subpixel.

  As shown in FIG. 4B, when the period of arrangement in the extending direction (also referred to as the first direction) of the wiring 52a and the like of the pixel unit 70 is a period P, the extending direction (second direction) of the wiring 51a and the like. It is preferable that the period of the arrangement is also twice that (period 2P). Thereby, display without distortion can be performed. Here, the period P can be set to 1 μm to 150 μm, preferably 2 μm to 120 μm, more preferably 3 μm to 100 μm, and still more preferably 4 μm to 60 μm. Thereby, an extremely high-definition display device can be realized.

  For example, the pixel electrode 91R1 or the like is preferably provided so as not to overlap with the wiring 52a or the like that functions as a signal line. Accordingly, electrical noise is transmitted through the capacitance between the wiring 52a and the like and the pixel electrode 91R1 and the like, and the change in the potential of the pixel electrode 91R1 and the like can be prevented from changing the luminance of the display element. .

  Further, the pixel electrode 91R1 or the like may be provided so as to overlap with the wiring 51a or the like that functions as a scanning line. Thereby, the area of the pixel electrode 91R1 can be increased, so that the aperture ratio can be increased. FIG. 4B shows an example in which part of the pixel electrode 91R1 is arranged so as to overlap with the wiring 51a.

  In the case where the pixel electrode 91R1 or the like of a certain subpixel and the wiring 51a or the like functioning as a scanning line are arranged so as to overlap with each other, the wiring connected to the pixel circuit of the subpixel is preferable. For example, a period in which a signal whose potential changes such as the wiring 51a is input corresponds to a period in which data of the subpixel is rewritten, so even if electrical noise is transmitted from the wiring 51a or the like to the pixel electrode through a capacitor. The luminance of the sub-pixel does not change.

[Example 1 of pixel layout]
Hereinafter, an example of the layout of the pixel unit 70 will be described.

  FIG. 5A shows an example of the layout of one subpixel. Here, for the sake of clarity, an example in a state before the pixel electrode is formed is shown. A subpixel illustrated in FIG. 5A includes a transistor 61, a transistor 62, and a capacitor 63. The transistor 62 is a transistor having two gates sandwiching a semiconductor layer.

  The wiring 51, one gate of the transistor 62, and the like are formed by the conductive film located on the lowermost side. A gate of the transistor 61, the other gate of the transistor 62, and the like are formed by a conductive film formed later than this. A conductive film formed after this forms the wiring 52, the source and drain electrodes of each transistor, one electrode of the capacitor 63, and the like. A wiring 53 and the like are formed by a conductive film formed later than this. A part of the wiring 53 functions as the other electrode of the capacitor 63.

  FIG. 5B illustrates an example of the layout of the pixel unit 70 using the sub-pixels illustrated in FIG. FIG. 5B also clearly shows each pixel electrode and the display area 22.

  Here, an example is shown in which three sub-pixels electrically connected to the wiring 51a and three sub-pixels electrically connected to the wiring 51b are symmetrical. As a result, when the subpixels of the same color are arranged in a zigzag pattern in the extending direction of the wiring 52a and the like, and the subpixels are connected to one wiring functioning as a signal line, the wiring in the subpixel Therefore, it is possible to suppress variations in luminance between sub-pixels.

  By using such a pixel layout, an extremely high-definition display device is manufactured even in a mass production line having a minimum processing dimension of 0.5 μm to 6 μm, typically 1.5 μm to 4 μm. It becomes possible.

  FIG. 5B clearly shows the liquid crystal element 40 positioned on the back side (the side opposite to the display surface) from each light emitting element and wiring. A region where the liquid crystal element 40 is visible without overlapping each light emitting element and each wiring corresponds to a transmission region.

[Example 2 of pixel layout]
6A and 6B show examples of layouts different from those shown in FIGS. 5A and 5B.

  In FIG. 6A, the wiring 51 and the like are formed using the first conductive film. In addition, the wiring 52, the wiring 53, and the like are configured by the second conductive film located in an upper layer than this.

  The transistor 61 includes a semiconductor layer provided over the wiring 51, a part of the wiring 52, and the like. The transistor 62 includes a conductive layer formed of a first conductive film, a semiconductor layer over the conductive layer, a wiring 53, and the like. The capacitive element 63 includes a part of the wiring 53 and a conductive layer made of the first conductive film.

  In FIG. 6B, each pixel electrode is arranged so as to overlap with a part of the sub-pixel adjacent to the extending direction of the wiring 52a and the like. For example, the pixel electrode 91G1 is provided so as to overlap with a part of the transistor 61, the capacitor 63, the wiring, the electrode, and the like included in the subpixel 71a. Such a configuration is particularly effective when a top emission type (top emission type) light emitting element is used. By arranging the circuit below the pixel electrode in this way, a large aperture ratio can be realized even if the area occupied by the pixel is reduced.

  Further, as shown in FIG. 6B, each pixel electrode is preferably arranged so as not to overlap with a wiring functioning as a signal line such as the wiring 52a. By doing so, it is possible to suppress the change in the potential of the signal line from affecting the potential of the pixel electrode. Note that in the case where it is necessary to overlap the pixel electrode with the signal line, the ratio of the overlapping area to the area of the pixel electrode may be 10% or less, preferably 5% or less.

  In addition, when the pixel electrode overlaps with a semiconductor layer of a transistor in an adjacent subpixel, the threshold voltage of the transistor may change due to a change in the potential of the pixel electrode. For example, in FIG. 6B, the pixel electrode 91G1 is provided so as to overlap with the semiconductor layer of the transistor 61 functioning as a selection transistor of the subpixel 71a. At this time, the pixel electrode is preferably provided so as to overlap with the selection transistor of the sub-pixel corresponding to the previous row in the scanning direction. By doing this, even if the target subpixel is selected and the potential of the pixel electrode changes, the adjacent subpixel that overlaps the target subpixel is in the non-selected state, and the selection transistor of the adjacent subpixel remains off. Is done. The gate line of the adjacent subpixel can be supplied with a potential for reliably turning off the selection transistor of the subpixel, so that no problem occurs even if the threshold voltage slightly changes. It becomes possible to do.

  In FIG. 6B, the liquid crystal element 40 located on the back side (the side opposite to the display surface) from each light emitting element or wiring is clearly shown. A region where the liquid crystal element 40 is visible without overlapping each light emitting element and each wiring corresponds to a transmission region.

  The above is the description of the example of the pixel arrangement method.

  The display device of one embodiment of the present invention can switch between display using only a light-emitting element and see-through display. Thereby, the electronic device which can switch a display method according to a condition is realizable.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 2)
Hereinafter, an electronic device including a display device that can switch between a light emission mode and a transmission mode, and a method for driving the display device will be described.

  FIG. 7 illustrates a block diagram of the electronic device 10a of one embodiment of the present invention. The electronic device 10a includes a control unit 11, an optical sensor 12, a display device 10, a drive unit 13EL, a drive unit 13LC, and the like.

  The control unit 11 includes a calculation unit 15. In addition, the control unit 11 may have a storage unit and the like.

  The display device 10 includes a display unit 10EL and a transmission control unit 10LC. The display unit 10EL includes a plurality of light emitting elements 90 arranged in a matrix. The transmission control unit 10LC includes a liquid crystal element 40 provided over the display area. Although an example having one liquid crystal element 40 is shown here, a plurality of liquid crystal elements 40 may be provided. Here, for convenience, the display unit 10EL and the transmission control unit 10LC are clearly shown as being shifted, but actually, the liquid crystal element 40 of the transmission control unit 10LC is disposed so as to overlap the display region of the display unit 10EL.

  The drive unit 13EL includes a circuit that drives the display unit 10EL. Specifically, a signal including a gradation value, a scanning signal, a timing signal, a power supply potential, and the like are supplied to the pixel circuit included in the display portion 10EL. The drive unit 13EL includes, for example, a signal line drive circuit and a scanning line drive circuit.

  The drive unit 13LC includes a circuit that drives the transmission control unit 10LC. The drive unit 13LC supplies a signal including a gradation value, a power supply potential, and the like to the liquid crystal element 40, for example. Note that when the liquid crystal element 40 included in the transmission control unit 10LC employs a passive matrix method or an active matrix method, a scanning signal, a timing signal, or the like may be supplied.

  The optical sensor 12 has a function of imaging the back side (the side opposite to the display surface side) of the display device 10. The optical sensor 12 can output a signal L0 including captured image information in response to a request from the calculation unit 15.

  A video signal S0 including image information is input to the calculation unit 15 in the control unit 11 from the outside. The calculation unit 15 generates a signal S1 from the video signal S0 and outputs the signal S1 to the drive unit 13EL. The signal S1 is a signal including a gradation value given to each pixel of the display unit 10EL.

  The calculation unit 15 generates a signal S2 and outputs it to the drive unit 13LC. The signal S2 is a signal including a gradation value corresponding to the transmission state of the transmission control unit 10LC.

  The calculation unit 15 determines, for example, whether the transmission control unit 10LC is to be in a transmission state or a non-transmission state in accordance with an input from a user or a command of an application being executed, and outputs a signal S2 to the drive unit 13LC. To do. In addition, the calculation unit 15 can switch from the transmissive state to the non-transmissive state, or switch from the non-transmissive state to the transmissive state.

  In addition, the calculation unit 15 analyzes the video signal included in the signal L0 input from the optical sensor 12, and determines whether the transmission control unit 10LC is to be in the transmission state or the non-transmission state based on the result. can do.

  For example, when the transmission control unit 10LC is in a non-transmission state, the calculation unit 15 detects whether there is a danger around the user, and determines that there is a risk, the transmission control unit 10LC 10LC can be switched to the transmissive state.

  Here, the danger around the user is that an object (for example, a moving object such as a car or a car, a pedestrian, a ball, etc.) is approaching the user, or an obstacle in the user's traveling direction. And there are steps.

  More specifically, the calculation unit 15 can calculate the distance between the user or the electronic device 10 a and the target object from the video information input from the optical sensor 12. In addition, by analyzing a plurality of pieces of video information (that is, moving images) captured at predetermined time intervals, the relative speed between the user or the electronic device 10a and the target object, the traveling direction of the target object, and the like are calculated. can do. Thereby, the danger that a target object contacts a user can also be estimated.

  Especially in wearable electronic devices such as glasses and goggles, or personal digital assistant devices such as smartphones and tablet devices, if the user is immersive in viewing the device, the surrounding danger cannot be detected There is. At this time, the display state shifts to the transparent mode, so that the user can be notified that the danger is imminent. Further, since the user can see the surrounding situation behind the electronic device 10a, an operation such as removing the electronic device 10a from the field of view is unnecessary, and the user can perceive danger more quickly. be able to.

  For example, as shown in FIG. 7B1, it is assumed that the user wearing the goggle-type electronic device 10a is viewing in the light emission mode. At this time, it is assumed that the bicycle is approaching the user. In FIG. 7 (B1), the distance from the bicycle is sufficiently large. When the bicycle approaches from the state of FIG. 7 (B1) as shown in FIG. 7 (B2), the display device 10 shifts from the light emission mode to the transmission mode, so that the user passes the electronic device 10a through the electronic device 10a. Can be seen and take evasive action instantly.

  7C1 and 7C2 illustrate the case of the tablet electronic device 10a. Even when the user is viewing in the light emission mode while walking, the display device 10 is switched from the light emission mode to the transmission mode, so that the user can see the bicycle through the electronic device 10a and instantaneously. You can take evasive action.

[Example of operation]
Below, an example of the drive method of the display apparatus 10 which the electronic device 10a can perform is demonstrated. Here, an example of a method for switching from the state of displaying in the non-transparent mode to the transparent mode will be described. FIG. 8 is a flowchart relating to the operation of the calculation unit 15.

  First, in step S11, display is performed in the non-transmissive mode.

  Subsequently, in step S <b> 12, the calculation unit 15 starts a request for data acquisition from the optical sensor 12. The optical sensor 12 outputs a signal including video information obtained by imaging the surrounding situation to the calculation unit 15. This request is continuously performed thereafter.

  Here, the more frequently the image information is acquired by the optical sensor 12, the more accurate the situation can be grasped. For example, the frequency of data acquisition in step S12 is, for example, 1 or more times per 5 seconds, preferably 1 or more times per second, more preferably 2 or more times per second, and even more preferably 5 or more times per second. Therefore, the frequency may be 60 times or less per second or 120 times or less per second.

  In step S <b> 13, the calculation unit 15 analyzes the video information and determines whether there is a danger in the surroundings. If a danger is detected, the process proceeds to step S14. If not detected, the process returns to step S11, and the display in the non-transparent mode is continued.

  In step S14, the display is switched from the non-transmission mode to the transmission mode.

  Switching from the non-transmission mode to the transmission mode is performed instantaneously (for example, for a period of less than 50 ms), so that the user can sufficiently secure time for avoiding danger. On the other hand, when switching from the non-transparent mode to the transparent mode, the user can be surprised by switching so that the transmittance continuously changes in a period that can be perceived by the user. it can. For example, the time until switching from the non-transmission mode to the transmission mode is 0.1 second or more, or 0.5 second or more, or 1 second or more, and can be within 5 seconds, preferably within 2 seconds. .

  In addition, it is preferable to display information for notifying the user that a danger has been detected on the display device 10 before switching from the non-transparent mode to the transparent mode or during the switching period.

  Subsequently, in step S15, the calculation unit 15 analyzes the video information and determines whether or not the surrounding danger continues. If the danger continues, the process returns to step S14 and the display in the transmission mode is continued. On the other hand, if the danger is eliminated, the process proceeds to step 16.

  In step 16, it is determined whether or not to continue the display. If the display is to be continued, the process returns to step S11 to display in the non-transmissive mode. If the display is not continued, the process ends.

  The above is the description of the example of the operation method of the electronic device 10a.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 3)
In this embodiment, structural examples of a display device (display panel) of one embodiment of the present invention will be described with reference to drawings.

[Display panel configuration example]
FIG. 9 is a perspective view of a display panel 300 of one embodiment of the present invention. The display panel 300 has a structure in which a substrate 351 and a substrate 361 are attached to each other. In FIG. 9, the substrate 351 is clearly indicated by a broken line.

  The display panel 300 includes a display portion 362, a circuit 364, a wiring 365, and the like. For example, a circuit 364, a wiring 365, and the like are provided between the substrate 351 and the substrate 361. FIG. 9 shows an example in which an IC 373 and an FPC 372 are mounted on the substrate 351. Therefore, the structure illustrated in FIG. 9 can also be referred to as a display module including the display panel 300, the FPC 372, and the IC 373.

  As the circuit 364, for example, a circuit functioning as a scan line driver circuit can be used.

  The wiring 365 has a function of supplying a signal and power to the display portion and the circuit 364. The signal and power are input to the wiring 365 from the outside through the FPC 372 or from the IC 373.

  FIG. 9 illustrates an example in which the IC 373 is provided on the substrate 351 by a COG (Chip On Glass) method or the like. As the IC 373, for example, an IC having a function as a scan line driver circuit, a signal line driver circuit, or the like can be used. Note that in the case where the display panel 300 includes a circuit that functions as a scanning line driver circuit and a signal line driver circuit, or a circuit that functions as a scanning line driver circuit or a signal line driver circuit is provided outside, and the display panel 300 is driven through the FPC 372. For example, the IC 373 may not be provided in the case of inputting a signal to do so. Further, the IC 373 may be mounted on the FPC 372 by a COF (Chip On Film) method or the like.

  FIG. 9 shows an enlarged view of a part of the display unit 362. In the display portion 362, a plurality of light emitting elements 360 are arranged in a matrix. Further, a liquid crystal element 340 is provided in a portion where the plurality of light emitting elements 360 are not provided.

  A touch sensor 366 can be provided over the substrate 361. For example, a structure may be employed in which a sheet-like capacitive touch sensor 366 is provided over the display portion 362. Alternatively, a touch sensor may be provided between the substrate 361 and the substrate 351. In the case where a touch sensor is provided between the substrate 361 and the substrate 351, an optical touch sensor using a photoelectric conversion element may be used in addition to the capacitive touch sensor.

[Section configuration example]
Below, the example of the cross-sectional structure of a display panel is demonstrated.

[Cross-section configuration example 1]
FIG. 10 illustrates an example of a cross section of the display panel illustrated in FIG. 9 when a part of the region including the FPC 372, a part of the region including the circuit 364, and a part of the region including the display portion 362 are cut. Show. Note that the touch sensor 366 is not included.

  The display panel includes an insulating layer 220 between the substrate 351 and the substrate 361. In addition, the light-emitting element 360, the transistor 201, the transistor 205, the wiring 209, the coloring layer 134, and the like are provided between the substrate 351 and the insulating layer 220. A liquid crystal element 340 and the like are provided between the insulating layer 220 and the substrate 361. In addition, the substrate 361 and the insulating layer 220 are bonded through an adhesive layer 161, and the substrate 351 and the insulating layer 220 are bonded through an adhesive layer 162.

  The wiring 209 is electrically connected to the liquid crystal element 340, and the transistor 205 is electrically connected to the light emitting element 360. Since the transistor 205 and the wiring 209 are both formed over the surface of the insulating layer 220 on the substrate 351 side, they can be manufactured using the same process.

  Here, the wiring 209, the connection portion 207, and the like are preferably provided outside the display portion 362. Note that in the case where the liquid crystal element 340 is provided with a plurality of liquid crystal elements 340, the connection portion 207 and the wiring 209 can be disposed outside the display portion 362 with respect to the liquid crystal element 340 located in contact with the end portion of the display portion 362. . For the liquid crystal element 340 that is not positioned at the end of the display portion 362, the connection portion 207 and the wiring 209 may be disposed inside the display portion 362.

  The substrate 361 is provided with a conductive layer 313 functioning as a common electrode of the liquid crystal element 340, an alignment film 133b, an insulating layer 117, and the like. The insulating layer 117 functions as a spacer for maintaining the cell gap of the liquid crystal element 340.

  On the substrate 351 side of the insulating layer 220, insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, and an insulating layer 215 are provided. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. The insulating layer 212, the insulating layer 213, and the insulating layer 214 are provided so as to cover each transistor. An insulating layer 215 is provided to cover the insulating layer 214. The insulating layer 214 and the insulating layer 215 have a function as a planarization layer. Note that although the case where the insulating layer covering the transistor and the like has three layers of the insulating layer 212, the insulating layer 213, and the insulating layer 214 is described here, the number of layers is not limited to this, and four or more layers may be used. It may be a layer or two layers. The insulating layer 214 functioning as a planarization layer is not necessarily provided if not necessary.

  In addition, the transistor 201 and the transistor 205 include a conductive layer 221 partly functioning as a gate, a conductive layer 222 partly functioning as a source or a drain, and a semiconductor layer 231. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film.

  The liquid crystal element 340 is a transmissive liquid crystal element. The liquid crystal element 340 has a stacked structure in which a conductive layer 311, a liquid crystal 312, and a conductive layer 313 are stacked. The conductive layer 311 and the conductive layer 313 include a material that transmits visible light. In addition, an alignment film 133 a is provided between the liquid crystal 312 and the conductive layer 311, and an alignment film 133 b is provided between the liquid crystal 312 and the conductive layer 313. In addition, a polarizing plate 130 b is provided on the outer surface of the substrate 361. In addition, a polarizing plate 130 a is provided on the outer surface of the substrate 351.

  In the liquid crystal element 340, the conductive layer 311 and the conductive layer 313 have a function of transmitting visible light. Light incident from the substrate 361 side is polarized by the polarizing plate 130b, passes through the conductive layer 311, the liquid crystal 312, the conductive layer 313, and the like and reaches the polarizing plate 130a. At this time, alignment of liquid crystal can be controlled by a voltage applied between the conductive layer 311 and the conductive layer 313, and optical modulation of light can be controlled. That is, the intensity of light emitted through the polarizing plate 130a can be controlled.

  Note that depending on the structure of the liquid crystal element 340, one or both of the polarizing plate 130a and the polarizing plate 130b may be omitted. For example, when a guest-host liquid crystal element is used as the liquid crystal element 340, the polarizing plate 130a can be eliminated. Thereby, the light extraction efficiency of the light emitting element 360 can be increased.

  The light emitting element 360 is a top emission type light emitting element. The light-emitting element 360 has a stacked structure in which a conductive layer 191, an EL layer 192, and a conductive layer 193 are stacked in this order from the insulating layer 220 side. An insulating layer 194 is provided so as to cover the conductive layer 193. The conductive layer 193 includes a material that transmits visible light, and the conductive layer 191 includes a material that reflects visible light. Light emitted from the light emitting element 360 is emitted to the outside through the colored layer 134, the substrate 351, and the like.

  Here, a linear polarizing plate may be used as the polarizing plate 130a disposed on the outer surface of the substrate 351, but a circular polarizing plate may also be used. As a circularly-polarizing plate, what laminated | stacked the linearly-polarizing plate and the quarter wavelength phase difference plate, for example can be used. Thereby, external light reflection can be suppressed. Further, a light diffusion plate may be provided to suppress external light reflection. In addition, a desired contrast may be realized by adjusting a cell gap, an alignment, a driving voltage, and the like of the liquid crystal element used for the liquid crystal element 340 depending on the type of the polarizing plate.

  An insulating layer 217 is provided over the insulating layer 216 that covers the end portion of the conductive layer 191. The insulating layer 217 has a function as a spacer for suppressing the insulating layer 220 and the substrate 351 from approaching more than necessary. In the case where the EL layer 192 and the conductive layer 193 are formed using a shielding mask (metal mask), the EL layer 192 and the conductive layer 193 may have a function of suppressing contact of the shielding mask with a formation surface. Note that the insulating layer 217 is not necessarily provided if not necessary.

  One of a source and a drain of the transistor 205 is electrically connected to the conductive layer 191 of the light-emitting element 360 through the conductive layer 224.

  The wiring 209 is electrically connected to the conductive layer 311 through the connection portion 207. Here, the connection portion 207 is a portion that connects the conductive layers provided on both surfaces of the insulating layer 220 through openings provided in the insulating layer 220.

  A connection portion 204 is provided in a region of the substrate 351 that does not overlap with the substrate 361. The connection portion 204 is electrically connected to the FPC 372 through the connection layer 242. The connection unit 204 has the same configuration as the connection unit 207. A conductive layer obtained by processing the same conductive film as the conductive layer 311 is exposed on the lower surface of the connection portion 204. Accordingly, the connection unit 204 and the FPC 372 can be electrically connected via the connection layer 242.

  A connection portion 252 is provided in a part of the region where the adhesive layer 161 is provided. In the connection portion 252, a conductive layer obtained by processing the same conductive film as the conductive layer 311 and a part of the conductive layer 313 are electrically connected to each other through the connection body 243. Therefore, a signal or a potential input from the FPC 372 connected to the substrate 351 side can be supplied to the conductive layer 313 formed on the substrate 361 side through the connection portion 252.

  As the connection body 243, for example, conductive particles can be used. As the conductive particles, those obtained by coating the surface of particles such as organic resin or silica with a metal material can be used. It is preferable to use nickel or gold as the metal material because the contact resistance can be reduced. In addition, it is preferable to use particles in which two or more kinds of metal materials are coated in layers, such as further coating nickel with gold. Further, it is preferable to use a material that is elastically deformed or plastically deformed as the connection body 243. At this time, the connection body 243, which is a conductive particle, may have a shape crushed in the vertical direction as shown in FIG. By doing so, the contact area between the connection body 243 and the conductive layer electrically connected to the connection body 243 can be increased, the contact resistance can be reduced, and the occurrence of problems such as connection failure can be suppressed.

  The connection body 243 is preferably disposed so as to be covered with the adhesive layer 161. For example, the connection body 243 may be disposed after applying a paste or the like to be the adhesive layer 161.

  FIG. 10 illustrates an example in which the transistor 201 is provided as an example of the circuit 364.

  In FIG. 10, as an example of the transistor 201 and the transistor 205, a structure in which a semiconductor layer 231 where a channel is formed is sandwiched between two gates is applied. One gate is formed of a conductive layer 221, and the other gate is formed of a conductive layer 223 that overlaps with the semiconductor layer 231 with an insulating layer 212 interposed therebetween. With such a structure, the threshold voltage of the transistor can be controlled. At this time, the transistor may be driven by connecting two gates and supplying the same signal thereto. Such a transistor can have higher field-effect mobility than other transistors, and can increase on-state current. As a result, a circuit that can be driven at high speed can be manufactured. Furthermore, the area occupied by the circuit portion can be reduced. By applying a transistor with a large on-state current, signal delay in each wiring can be reduced and display unevenness can be suppressed even if the number of wirings increases when the display panel is increased in size or definition. can do.

  Note that the transistor included in the circuit 364 and the transistor included in the display portion 362 may have the same structure. In addition, the plurality of transistors included in the circuit 364 may have the same structure or may be combined with different structures. In addition, the plurality of transistors included in the display portion 362 may have the same structure or may be combined with transistors having different structures.

  At least one of the insulating layer 212 and the insulating layer 213 that covers each transistor is preferably formed using a material in which impurities such as water and hydrogen hardly diffuse. That is, the insulating layer 212 or the insulating layer 213 can function as a barrier film. With such a structure, it is possible to effectively prevent impurities from diffusing from the outside to the transistor, and a highly reliable display panel can be realized.

[Cross-section configuration example 2]
FIG. 11 illustrates an example including the transistor 206 that is electrically connected to the liquid crystal element 340. Accordingly, the liquid crystal element 340 can be an active matrix liquid crystal element.

  In the connection portion 207, a conductive layer 222 that functions as one of a source and a drain of the transistor 206 is provided. Accordingly, the conductive layer 311 of the liquid crystal element 340 is electrically connected to the transistor 206 through the connection portion 207.

[Cross-section configuration example 3]
FIG. 12 illustrates an example in which the structure of the transistor 205 is different from the structure illustrated in FIG. Further, a transistor 203 functioning as a pixel selection transistor is clearly shown.

  The transistor 203 is a so-called top gate transistor. The transistor 205 is a transistor in which a conductive layer functioning as a second gate is added to the transistor 203.

  Such a transistor structure can be preferably applied to the case where an oxide semiconductor is used for a semiconductor in which a channel is formed, for example. In addition, it can be suitably used when a crystalline semiconductor such as a polycrystalline semiconductor or a single crystal semiconductor is used. For example, when silicon is used as the semiconductor material, polycrystalline silicon (polysilicon), single crystal silicon, or the like can be preferably used. In the case of using single crystal silicon, a technique for forming a single crystal thin film formed by bonding a single crystal silicon substrate provided with an embrittlement layer and an insulating layer and performing separation with the embrittlement layer as a boundary is used. You can also. For example, SOI (Silicon on Insulator) technology or the like can be used.

  Alternatively, a transistor including a single crystal semiconductor may be formed by forming a transistor over a single crystal substrate such as a silicon wafer and polishing the substrate so as to have a light-transmitting property.

  By using a crystalline semiconductor, the size of a transistor can be reduced, so that the pixel size can be extremely reduced. Therefore, an extremely high-definition display device can be realized.

[Cross-section configuration example 4]
The display panel of one embodiment of the present invention may have a structure in which the transistor 205 provided in the pixel overlaps with the transistor 208 as illustrated in FIG. With such a structure, an area per pixel can be reduced, and a display panel with a high pixel density capable of displaying a high-definition image can be formed.

  One of a source and a drain of the transistor 208 functions as one gate of the transistor 205.

  For example, the transistor 205 which is a transistor for driving the light-emitting element 360 and the transistor 208 can be overlapped with each other. Alternatively, in the case where an active matrix transistor is used for the liquid crystal element 340, a structure in which a transistor for driving the liquid crystal element 340 and one of the transistor 205 and the transistor 208 overlap with each other may be employed.

[Cross-section configuration example 5]
In FIG. 14, a conductive layer 191 functioning as a pixel electrode of the light-emitting element 360 is connected to the transistor 205 through the connection portion 207.

  In FIG. 13, since there is no step between the upper surface of the insulating layer 220 and the upper surface of the conductive layer 191, the EL layer 192 and the conductive layer 193 provided thereover are not affected by the step. Therefore, it is not necessary to provide the insulating layer 216 that was necessary in FIG. In addition, since the formation surface of the EL layer 192 is extremely flat, variation in thickness of the EL layer 192 can be suppressed, so that unevenness in luminance can be reduced.

[Cross-section configuration example 6]
FIG. 15 illustrates an example in which the transistor 206 that is electrically connected to the liquid crystal element 340 is provided in FIG. That is, the liquid crystal element 340 illustrated in FIG. 15 is a liquid crystal element to which an active matrix method is applied.

  The above is the description of the cross-sectional configuration example.

[About each component]
Below, each component shown above is demonstrated.

〔substrate〕
A substrate having a flat surface can be used for the substrate included in the display panel. For the substrate from which light from the display element is extracted, a material that transmits the light is used. For example, materials such as glass, quartz, ceramic, sapphire, and organic resin can be used.

  Alternatively, an SOI substrate in which a single crystal semiconductor film is formed over a light-transmitting substrate may be used. Alternatively, a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate, or the like may be used and polished thinly enough to have a light-transmitting property after a manufacturing process of a display panel.

  In particular, use of quartz having a low thermal expansion coefficient, a single crystal semiconductor substrate, or the like is preferable because a display panel with extremely high definition (eg, 3000 ppi or more) can be realized.

  By using a thin substrate, the display panel can be reduced in weight and thickness. Furthermore, a flexible display panel can be realized by using a flexible substrate.

Examples of materials having flexibility and transparency to visible light include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, and polycarbonates. (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, polytetrafluoroethylene (PTFE) resin, and the like. In particular, a material having a low thermal expansion coefficient is preferably used. For example, a polyamideimide resin, a polyimide resin, PET, or the like having a thermal expansion coefficient of 30 × 10 ⁻⁶ / K or less can be suitably used. Further, a substrate in which glass fiber is impregnated with an organic resin, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can be used. Since a substrate using such a material is light in weight, a display panel using the substrate can be lightweight.

  When a fibrous body is included in the material, a high-strength fiber of an organic compound or an inorganic compound is used for the fibrous body. The high-strength fiber specifically refers to a fiber having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, Examples include polyparaphenylene benzobisoxazole fibers, glass fibers, and carbon fibers. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like. These may be used in the form of a woven fabric or a non-woven fabric, and a structure obtained by impregnating the fiber body with a resin and curing the resin may be used as a flexible substrate. When a structure made of a fibrous body and a resin is used as the flexible substrate, it is preferable because reliability against breakage due to bending or local pressing is improved.

  Alternatively, glass, metal, or the like thin enough to have flexibility can be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded to each other with an adhesive layer may be used.

  A hard coat layer (for example, silicon nitride, aluminum oxide) that protects the surface of the display panel from scratches, a layer of a material that can disperse the pressure (for example, aramid resin), etc. on a flexible substrate It may be laminated. In order to suppress a decrease in the lifetime of the display element due to moisture or the like, an insulating film with low water permeability may be stacked over a flexible substrate. For example, an inorganic insulating material such as silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum nitride can be used.

  The substrate can be used by stacking a plurality of layers. In particular, when the glass layer is used, the barrier property against water and oxygen can be improved and a highly reliable display panel can be obtained.

[Transistor]
The transistor includes a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer. The above shows the case where a bottom-gate transistor is applied.

  Note that there is no particular limitation on the structure of the transistor included in the display device of one embodiment of the present invention. For example, a planar transistor, a staggered transistor, or an inverted staggered transistor may be used. Further, a top-gate or bottom-gate transistor structure may be employed. Alternatively, gate electrodes may be provided above and below the channel.

  There is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and either an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) is used. May be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.

  As a semiconductor material used for the transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used. Typically, a metal oxide containing indium, for example, a CAC-OS described later can be used.

  A transistor using a metal oxide having a wider band gap and lower carrier density than silicon retains charges accumulated in a capacitor connected in series with the transistor for a long period of time due to its low off-state current. Is possible.

  The semiconductor layer is represented by an In-M-Zn-based oxide containing indium, zinc, and M (metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). It can be a membrane.

  When the metal oxide composing the semiconductor layer is an In-M-Zn-based oxide, the atomic ratio of the metal element of the sputtering target used for forming the In-M-Zn oxide is In ≧ M, Zn It is preferable to satisfy ≧ M. As the atomic ratio of the metal elements of such a sputtering target, In: M: Zn = 1: 1: 1, In: M: Zn = 1: 1: 1.2, In: M: Zn = 3: 1: 2, In: M: Zn = 4: 2: 3, In: M: Zn = 4: 2: 4.1, In: M: Zn = 5: 1: 6, In: M: Zn = 5: 1: 7, In: M: Zn = 5: 1: 8 etc. are preferable. Note that the atomic ratio of the semiconductor layer to be formed includes a variation of plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target.

  The bottom-gate transistor described in this embodiment is preferable because the number of manufacturing steps can be reduced. At this time, by using a metal oxide, it is possible to use a material having low heat resistance as a material of a wiring, an electrode, or a substrate below the semiconductor layer, which can be formed at a temperature lower than that of polycrystalline silicon. Can widen the choice of materials. For example, a glass substrate having an extremely large area can be suitably used.

As the semiconductor layer, a metal oxide film with low carrier density is used. For example, the semiconductor layer has a carrier density of 1 × 10 ¹⁷ / cm ³ or less, preferably 1 × 10 ¹⁵ / cm ³ or less, more preferably 1 × 10 ¹³ / cm ³ or less, more preferably 1 × 10 ¹¹ / cm 3. ³ or less, more preferably less than 1 × ^{10 10} / cm ^3, it is possible to use a 1 × ¹⁰ -9 / cm ³ metal oxide or more carrier density. Such metal oxides are referred to as high purity intrinsic or substantially high purity intrinsic metal oxides. Accordingly, it can be said that the metal oxide has stable characteristics because the impurity concentration is low and the density of defect states is low.

  Note that the composition is not limited thereto, and a transistor having an appropriate composition may be used depending on required semiconductor characteristics and electrical characteristics (such as field-effect mobility and threshold voltage) of the transistor. In addition, in order to obtain the required semiconductor characteristics of the transistor, it is preferable that the semiconductor layer have appropriate carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like. .

If the metal oxide constituting the semiconductor layer contains silicon or carbon which is one of the Group 14 elements, oxygen vacancies increase in the semiconductor layer and become n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 2 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁷ atoms / cm ³ or less.

In addition, when alkali metal and alkaline earth metal are combined with a metal oxide, carriers may be generated, which may increase the off-state current of the transistor. Therefore, the concentration of alkali metal or alkaline earth metal obtained by secondary ion mass spectrometry in the semiconductor layer is set to 1 × 10 ¹⁸ atoms / cm ³ or less, preferably 2 × 10 ¹⁶ atoms / cm ³ or less.

In addition, when nitrogen is contained in the metal oxide constituting the semiconductor layer, electrons as carriers are generated, the carrier density is increased, and the n-type is easily obtained. As a result, a transistor using a metal oxide containing nitrogen is likely to be normally on. For this reason, it is preferable that the nitrogen concentration obtained by secondary ion mass spectrometry in the semiconductor layer is 5 × 10 ¹⁸ atoms / cm ³ or less.

  The semiconductor layer may have a non-single crystal structure, for example. The non-single-crystal structure includes, for example, a CAAC-OS (C-Axis Crystalline Oxide Semiconductor Semiconductor having a crystal oriented in the c-axis, or a C-Axis Aligned and A-B-Plane Annealed Crystal Oxide Crystal Structure, Includes a microcrystalline structure or an amorphous structure. In the non-single-crystal structure, the amorphous structure has the highest density of defect states, and the CAAC-OS has the lowest density of defect states.

  An amorphous metal oxide film has, for example, disordered atomic arrangement and no crystal component. Alternatively, an amorphous oxide film has, for example, a completely amorphous structure and does not have a crystal part.

  Note that the semiconductor layer may be a mixed film including two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC-OS region, and a single crystal structure region. Good. For example, the mixed film may have a single-layer structure or a stacked structure including any two or more of the above-described regions.

<Configuration of CAC-OS>
A structure of a CAC (Cloud-Aligned Composite) -OS that can be used for the transistor disclosed in one embodiment of the present invention is described below.

  The CAC-OS is one structure of a material in which elements forming a metal oxide are unevenly distributed with a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. In the following, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or the vicinity thereof. The state mixed with is also referred to as a mosaic or patch.

  Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind selected from the above or a plurality of kinds may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{(hereinafter, in X2 Zn Y2 O Z2 (} X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter Also referred to as a cloud-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite metal oxide having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and may refer to one compound of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.

  The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

  On the other hand, CAC-OS relates to a material structure of a metal oxide. CAC-OS refers to a region observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn and O, and nanoparticles mainly composed of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

  Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

  In place of gallium, aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium are selected. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

  The CAC-OS can be formed by a sputtering method under a condition where the substrate is not intentionally heated, for example. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

  The CAC-OS is characterized in that no clear peak is observed when it is measured using a θ / 2θ scan by the out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

  In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

The CAC-OS has a structure different from that of the IGZO compound in which the metal element is uniformly distributed, and has a property different from that of the IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and a region in which each element is a main component. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than a region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, conductive metal oxide is expressed. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the metal oxide, so that high field-effect mobility (μ) can be realized.

On the other hand, areas such as _{GaO X3} is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, since the region mainly composed of GaO _X3 or the like is distributed in the metal oxide, a leakage current can be suppressed and a good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (I _on ) and high field effect mobility (μ) can be realized.

  In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

  In addition, a transistor including a CAC-OS in a semiconductor layer has high field-effect mobility and high driving capability; therefore, the transistor can be used for a driver circuit, typically a scan line driver circuit that generates a gate signal. A display device with a narrow frame width (also referred to as a narrow frame) can be provided. In addition, by using the transistor for a signal line driver circuit that supplies a signal from a signal line included in the display device (particularly, a demultiplexer connected to an output terminal of a shift register included in the signal line driver circuit), display is performed. A display device with a small number of wirings connected to the device can be provided.

  In addition, a transistor having a CAC-OS in a semiconductor layer does not require a laser crystallization step unlike a transistor using a low-temperature polysilicon. For this reason, even in a display device using a large-area substrate, the manufacturing cost can be reduced. Furthermore, in high-resolution displays such as ultra high-definition (“4K resolution”, “4K2K”, “4K”) and super high-definition (“8K resolution”, “8K4K”, “8K”), and in large display devices, semiconductors A transistor having a CAC-OS in the layer is preferably used for a driver circuit and a display portion because writing in a short time is possible and display defects can be reduced.

  Alternatively, silicon may be used for the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as silicon, it is particularly preferable to use silicon having crystallinity. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, or the like is preferably used. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon.

  The bottom-gate transistor described in this embodiment is preferable because the number of manufacturing steps can be reduced. At this time, since amorphous silicon can be used at a lower temperature than polycrystalline silicon, it is possible to use a material having low heat resistance as a material for wiring, electrodes, and substrates below the semiconductor layer. Can widen the choice of materials. For example, a glass substrate having an extremely large area can be suitably used. On the other hand, a top-gate transistor is preferable because an impurity region can be easily formed in a self-aligned manner and variation in characteristics can be reduced. At this time, it is particularly suitable when polycrystalline silicon, single crystal silicon or the like is used.

[Conductive layer]
In addition to the gate, source, and drain of a transistor, materials that can be used for conductive layers such as various wirings and electrodes that constitute a display device include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, A metal such as tantalum or tungsten, or an alloy containing the same as a main component can be given. A film containing any of these materials can be used as a single layer or a stacked structure. For example, a single layer structure of an aluminum film containing silicon, a two layer structure in which an aluminum film is stacked on a titanium film, a two layer structure in which an aluminum film is stacked on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film Two-layer structure to stack, two-layer structure to stack copper film on titanium film, two-layer structure to stack copper film on tungsten film, titanium film or titanium nitride film, and aluminum film or copper film on top of it A three-layer structure for forming a titanium film or a titanium nitride film thereon, a molybdenum film or a molybdenum nitride film, and an aluminum film or a copper film stacked thereon, and a molybdenum film or a There is a three-layer structure for forming a molybdenum nitride film. Note that an oxide such as indium oxide, tin oxide, or zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is increased.

  As the light-transmitting conductive material, conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added, or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride (eg, titanium nitride) of the metal material may be used. Note that in the case where a metal material or an alloy material (or a nitride thereof) is used, it may be thin enough to have a light-transmitting property. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased. These can also be used for conductive layers such as various wirings and electrodes constituting the display device and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) included in the display element.

[Insulation layer]
Insulating materials that can be used for each insulating layer include, for example, resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulation such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide. Materials can also be used.

  In addition, the light-emitting element is preferably provided between a pair of insulating films with low water permeability. Thereby, impurities such as water can be prevented from entering the light emitting element, and a decrease in reliability of the apparatus can be suppressed.

  Examples of the low water-permeable insulating film include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride oxide film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

For example, the water vapor transmission rate of an insulating film with low water permeability is 1 × 10 ⁻⁵ [g / (m ² · day)] or less, preferably 1 × 10 ⁻⁶ [g / (m ² · day)] or less, More preferably, it is 1 × 10 ⁻⁷ [g / (m ² · day)] or less, and further preferably 1 × 10 ⁻⁸ [g / (m ² · day)] or less.

[Liquid crystal element]
As the liquid crystal element, for example, a liquid crystal element to which a vertical alignment (VA: Vertical Alignment) mode is applied can be used. As the vertical alignment mode, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, or the like can be used.

  As the liquid crystal element, liquid crystal elements to which various modes are applied can be used. For example, in addition to the VA mode, a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an ASM (Axially Symmetrical Aligned Micro-cell) mode, , A liquid crystal element to which an FLC (Ferroelectric Liquid Crystal) mode, an AFLC (Anti Ferroelectric Liquid Crystal) mode, an ECB (Electrically Controlled Birefringence) mode, a guest host mode, or the like can be used. .

  Note that a liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal. Note that the optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). As the liquid crystal used for the liquid crystal element, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal (PDLC), a polymer network liquid crystal (PNLC), Ferroelectric liquid crystals, antiferroelectric liquid crystals, and the like can be used. These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, and the like depending on conditions.

  Further, as the liquid crystal material, either a positive type liquid crystal or a negative type liquid crystal may be used, and an optimal liquid crystal material may be used according to an applied mode or design.

  An alignment film can be provided to control the alignment of the liquid crystal. Note that in the case of employing a horizontal electric field mode, liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used. The blue phase is one of the liquid crystal phases. When the temperature of the cholesteric liquid crystal is increased, the blue phase appears immediately before the transition from the cholesteric phase to the isotropic phase. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with several percent by weight or more of a chiral agent is used for the liquid crystal layer in order to improve the temperature range. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and is optically isotropic. In addition, a liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. Further, since it is not necessary to provide an alignment film, a rubbing process is not required, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects or breakage of the liquid crystal display device during the manufacturing process can be reduced. .

  Examples of the liquid crystal element include a transmissive liquid crystal element, a reflective liquid crystal element, and a transflective liquid crystal element.

  In one embodiment of the present invention, a transmissive liquid crystal element can be particularly preferably used.

  In the case of using a transmissive or transflective liquid crystal element, two polarizing plates are provided so as to sandwich a pair of substrates. A backlight is provided outside the polarizing plate. The backlight may be a direct type backlight or an edge light type backlight. It is preferable to use a direct-type backlight including an LED (Light Emitting Diode) because local dimming is facilitated and contrast can be increased. An edge light type backlight is preferably used because the thickness of the module including the backlight can be reduced.

  Note that see-through display can be performed by turning off the edge-light type backlight.

[Light emitting element]
As the light-emitting element, an element capable of self-emission can be used, and an element whose luminance is controlled by current or voltage is included in its category. For example, an LED, an organic EL element, an inorganic EL element, or the like can be used.

  Light emitting elements include a top emission type, a bottom emission type, and a dual emission type. A conductive film that transmits visible light is used for the electrode from which light is extracted. In addition, a conductive film that reflects visible light is preferably used for the electrode from which light is not extracted.

  In one embodiment of the present invention, a top emission light-emitting element can be particularly preferably used.

  The EL layer has at least a light emitting layer. The EL layer is a layer other than the light-emitting layer, such as a substance having a high hole-injecting property, a substance having a high hole-transporting property, a hole blocking material, a substance having a high electron-transporting property, a substance having a high electron-injecting property, A layer including a substance (a substance having a high electron transporting property and a high hole transporting property) or the like may be further included.

  In the EL layer, either a low molecular compound or a high molecular compound can be used, and an inorganic compound may be included. The layers constituting the EL layer can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, or a coating method.

  When a voltage higher than the threshold voltage of the light emitting element is applied between the cathode and the anode, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the EL layer, and the light-emitting substance contained in the EL layer emits light.

  In the case where a white light-emitting element is used as the light-emitting element, the EL layer preferably includes two or more light-emitting substances. For example, white light emission can be obtained by selecting the light emitting material so that the light emission of each of the two or more light emitting materials has a complementary color relationship. For example, a light emitting material that emits light such as R (red), G (green), B (blue), Y (yellow), and O (orange), or spectral components of two or more colors of R, G, and B It is preferable that 2 or more are included among the luminescent substances which show light emission containing. In addition, it is preferable to apply a light-emitting element whose emission spectrum from the light-emitting element has two or more peaks in a wavelength range of visible light (for example, 350 nm to 750 nm). The emission spectrum of the material having a peak in the yellow wavelength region is preferably a material having spectral components in the green and red wavelength regions.

  The EL layer preferably has a structure in which a light-emitting layer including a light-emitting material that emits one color and a light-emitting layer including a light-emitting material that emits another color are stacked. For example, the plurality of light emitting layers in the EL layer may be stacked in contact with each other, or may be stacked through a region not including any light emitting material. For example, a region including the same material (for example, a host material or an assist material) as the fluorescent light emitting layer or the phosphorescent light emitting layer and not including any light emitting material is provided between the fluorescent light emitting layer and the phosphorescent light emitting layer. Also good. This facilitates the production of the light emitting element and reduces the driving voltage.

  The light-emitting element may be a single element having one EL layer or a tandem element in which a plurality of EL layers are stacked with a charge generation layer interposed therebetween.

  The conductive film that transmits visible light can be formed using, for example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like. In addition, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, an alloy containing these metal materials, or a nitride of these metal materials (for example, Titanium nitride) can also be used by forming it thin enough to have translucency. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a stacked film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased. Further, graphene or the like may be used.

  For the conductive film that reflects visible light, for example, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or an alloy including these metal materials is used. Can do. In addition, lanthanum, neodymium, germanium, or the like may be added to the metal material or alloy. Alternatively, titanium, nickel, or neodymium and an alloy containing aluminum (aluminum alloy) may be used. Alternatively, an alloy containing copper, palladium, magnesium, and silver may be used. An alloy containing silver and copper is preferable because of its high heat resistance. Furthermore, oxidation can be suppressed by stacking a metal film or a metal oxide film in contact with the aluminum film or the aluminum alloy film. Examples of materials for such metal films and metal oxide films include titanium and titanium oxide. Alternatively, the conductive film that transmits visible light and a film made of a metal material may be stacked. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, or the like can be used.

  The electrodes may be formed using a vapor deposition method or a sputtering method, respectively. In addition, it can be formed using a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

  Note that the above-described light-emitting layer and a layer containing a substance having a high hole-injecting property, a substance having a high hole-transporting property, a substance having a high electron-transporting property, a substance having a high electron-injecting property, a bipolar substance, Each may have an inorganic compound such as a quantum dot or a polymer compound (oligomer, dendrimer, polymer, etc.). For example, a quantum dot can be used for a light emitting layer to function as a light emitting material.

  As the quantum dot material, a colloidal quantum dot material, an alloy type quantum dot material, a core / shell type quantum dot material, a core type quantum dot material, or the like can be used. Alternatively, a material including an element group of Group 12 and Group 16, Group 13 and Group 15, or Group 14 and Group 16 may be used. Alternatively, a quantum dot material containing an element such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, or aluminum may be used.

[Adhesive layer]
As the adhesive layer, various curable adhesives such as an ultraviolet curable photocurable adhesive, a reactive curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like. In particular, a material with low moisture permeability such as an epoxy resin is preferable. Alternatively, a two-component mixed resin may be used. Further, an adhesive sheet or the like may be used.

  Further, the resin may contain a desiccant. For example, a substance that adsorbs moisture by chemical adsorption, such as an alkaline earth metal oxide (such as calcium oxide or barium oxide), can be used. Alternatively, a substance that adsorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. The inclusion of a desiccant is preferable because impurities such as moisture can be prevented from entering the element and the reliability of the display panel is improved.

  In addition, light extraction efficiency can be improved by mixing a filler having a high refractive index or a light scattering member with the resin. For example, titanium oxide, barium oxide, zeolite, zirconium, or the like can be used.

(Connection layer)
As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

(Colored layer)
Examples of materials that can be used for the colored layer include metal materials, resin materials, resin materials containing pigments or dyes, and the like.

[Light shielding layer]
Examples of the material that can be used for the light-shielding layer include carbon black, titanium black, metal, metal oxide, and composite oxide containing a solid solution of a plurality of metal oxides. The light shielding layer may be a film containing a resin material or a thin film of an inorganic material such as a metal. Alternatively, a stacked film of a film containing a material for the colored layer can be used for the light shielding layer. For example, a stacked structure of a film including a material used for a colored layer that transmits light of a certain color and a film including a material used for a colored layer that transmits light of another color can be used. It is preferable to use a common material for the coloring layer and the light-shielding layer because the apparatus can be shared and the process can be simplified.

  The above is the description of the components.

  This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

DESCRIPTION OF SYMBOLS 10 Display apparatus 10a Electronic device 10EL Display part 10LC Transmission control part 11 Control part 12 Optical sensor 13EL Drive part 13LC Drive part 15 Calculation part 17 IC
20 pixel unit 20B light 20e light 20G light 20in light 20R light 20t transmitted light 21 substrate 22 display region 23 conductive layer 24 liquid crystal 25 conductive layer 30 pixel 30a polarizing plate 30b polarizing plate 31 substrate 39a polarizing plate 39b polarizing plate 40 liquid crystal element 41a pixel Circuit 41b Pixel circuit 42a Pixel circuit 42b Pixel circuit 43a Pixel circuit 43b Pixel circuit 45 Functional layer 45a Functional layer 45b Functional layer 51 Wiring 51a Wiring 51b Wiring 52 Wiring 52a Wiring 52b Wiring 52c Wiring 52d Wiring 53 Wiring 53a Wiring 53b Wiring 53c Wiring 60 Display element 61 Transistor 62 Transistor 63 Capacitor element 70 Pixel unit 70a Pixel 70b Pixel 71a Subpixel 71b Subpixel 72a Subpixel 72b Subpixel 73a Subpixel 73b Subpixel 81 Insulating layer 83 Insulating layer 84 Insulating layer 89 Adhesive 90 light emitting element 90B light emitting element 90G light emitting element 90R light emitting element 91 conductive layer 91B1 pixel electrode 91B2 pixel electrode 91G1 pixel electrode 91G2 pixel electrode 91R1 pixel electrode 91R2 pixel electrode 92 EL layer 92B EL layer 92G EL layer 92R EL layer 93 conductive layer 95 wiring 117 Insulating layer 130a Polarizing plate 130b Polarizing plate 133a Alignment film 133b Alignment film 134 Colored layer 161 Adhesive layer 162 Adhesion layer 191 Conductive layer 192 EL layer 193 Conductive layer 194 Insulating layer 201 Transistor 203 Transistor 204 Connection portion 205 Transistor 206 Transistor 207 Connection portion 208 transistor 209 wiring 211 insulating layer 212 insulating layer 213 insulating layer 214 insulating layer 215 insulating layer 216 insulating layer 217 insulating layer 220 insulating layer 221 conductive layer 222 conductive layer 223 conductive layer 24 conductive layer 231 semiconductor layer 242 connecting layer 243 connecting body 252 connection portion 300 display panel 311 conductive layer 312 LCD 313 conductive layer 340 liquid crystal element 351 substrate 360 light-emitting element 361 substrate 362 display unit 364 circuit 365 wiring 366 touch sensor 372 FPC
373 IC

Claims (11)

A display device having a first light emitting element, a second light emitting element, and a liquid crystal element,
The first light emitting element and the second light emitting element are provided separately on the same plane,
The liquid crystal element is provided on a different surface from the first light emitting element,
The liquid crystal element has a portion overlapping with a region between the first light emitting element and the second light emitting element,
The liquid crystal element transmits light when an electric field is applied, and shields light when an electric field is not applied,
Display device. In claim 1,
A first transistor electrically connected to the first light emitting element;
Display device. In claim 1 or claim 2,
A second transistor electrically connected to the liquid crystal element;
Display device. In claim 1 or claim 2,
The liquid crystal element is a passive or segmented liquid crystal element.
Display device. In claim 1,
A first substrate, a second substrate, and an insulating layer;
The insulating layer is located between the first substrate and the second substrate;
The first light emitting element and the second light emitting element are located between the first substrate and the insulating layer,
The liquid crystal element is located between the second substrate and the insulating layer;
Display device. In claim 5,
A first transistor electrically connected to the first light-emitting element, and a wiring electrically connected to the liquid crystal element,
The first transistor and the wiring are located between the insulating layer and the first substrate,
The wiring is electrically connected to the liquid crystal element through the opening of the insulating layer.
Display device. In claim 5,
A first transistor electrically connected to the first light-emitting element, and a wiring electrically connected to the liquid crystal element,
The first transistor and the wiring are located between the insulating layer and the second substrate,
The first transistor is electrically connected to the first light-emitting element through an opening of the insulating layer;
Display device. In claim 6 or claim 7,
A second transistor electrically connected to the wiring;
Display device. In any one of Claims 1 thru | or 8,
The first light emitting elements are arranged with a definition of 500 ppi or more and 5000 ppi or less,
Display device. A driving method of a display device having a light emitting element and a liquid crystal element,
A first mode in which an image is displayed by the light emitting element in a state where the liquid crystal element blocks external light;
In a state in which the liquid crystal element transmits external light, the second mode in which an image is displayed by the light emitting element is switched to overlap with a transmission image transmitted through the liquid crystal element.
A driving method of a display device. A driving method of a display device having a light emitting element, a liquid crystal element, and an optical sensor,
According to the information acquired by the optical sensor,
A first mode in which an image is displayed by the light emitting element in a state where the liquid crystal element blocks external light;
In a state in which the liquid crystal element transmits external light, the second mode in which an image is displayed by the light emitting element is switched to overlap with a transmission image transmitted through the liquid crystal element.
A driving method of a display device.

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