JP2018058960A - Sealing resin composition, semiconductor device, and method for producing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sealing resin composition having high adhesion to a plate lead frame at high temperature.SOLUTION: A sealing resin composition contains an epoxy resin (A) containing an epoxy resin (A1) represented by formula (1), a phenolic compound (B) containing a phenolic compound (B1) represented by formula (2), and an aromatic monocarboxylic acid (C) having an electron-withdrawing functional group.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a sealing resin composition, a semiconductor device including a sealing material containing a cured product of the sealing resin composition, and a method for manufacturing a semiconductor device using the sealing resin composition.

  Conventionally, when sealing semiconductor elements such as transistors and ICs, resin sealing is performed for the purpose of improving productivity and reducing costs. Resin sealing is performed, for example, by molding a sealing resin composition containing an epoxy resin, a phenol resin-based curing agent, a curing accelerator, and an inorganic filler to produce a sealing material.

  A semiconductor device sealed with a sealing material includes, for example, a lead frame made of copper, a semiconductor element mounted on the lead frame, and a wire that electrically connects the semiconductor element and the lead frame. Seals the semiconductor element (see Patent Document 1). For this reason, the sealing material is in contact with the lead frame and the wire.

  In patent document 1, in order to improve the adhesiveness of a sealing material and the plated lead frame, the epoxy resin composition for sealing containing an epoxy resin, a phenol resin type hardening | curing agent, a hardening accelerator, and an inorganic filler It has been proposed that the product further contains an aromatic polycarboxylic acid having one nitro group in the molecule.

JP 2014-114426 A

  In recent years, semiconductor devices that are used in harsh environments such as in-vehicle semiconductor devices are required to have high reliability that can withstand high temperatures. Therefore, it is necessary to ensure high adhesion between the sealing material and the plated lead frame even when exposed to high temperatures.

  The object of the present invention can be used to produce a sealing material, and this sealing material is a sealing resin composition that can have high adhesion to a lead frame plated at a high temperature. Is to provide.

  The sealing resin composition according to one embodiment of the present invention includes an epoxy resin (A) containing an epoxy resin (A1) represented by the following formula (1), and a phenol compound (B1) represented by the following formula (2). And an aromatic monocarboxylic acid (C) having at least one electron-withdrawing functional group selected from the group consisting of a nitro group, a cyano group and a hydroxyl group.

In formula (1), n is in the range of 1.0 to 3.5 on the average, and m is in the range of 1.0 to 9.0 on the average.

  In formula (2), n is in the range of 1.0 to 2.0 on the average, and m is in the range of 1.0 to 9.0 on the average.

  A semiconductor device according to one embodiment of the present invention includes a lead frame, a semiconductor element mounted on the lead frame, a wire for electrically connecting the semiconductor element and the lead frame, and the semiconductor element sealed The sealing material is a cured product of the sealing resin composition.

  The manufacturing method of the semiconductor device which concerns on 1 aspect of this invention includes producing the sealing material by shape | molding the said resin composition for sealing by the press molding method.

  According to one embodiment of the present invention, a sealing resin that can be used for producing a sealing material, and the sealing material can have high adhesion to a lead frame plated at a high temperature. A composition can be provided.

  Moreover, according to 1 aspect of this invention, the manufacturing method of the semiconductor device provided with the sealing material containing the hardened | cured material of the said resin composition for sealing, and the semiconductor device using the said resin composition for sealing can be provided. .

It is sectional drawing which shows the semiconductor device by one Embodiment of this invention. It is a schematic diagram which shows the molecular structure of 3-nitrobenzoic acid. It is a schematic diagram which shows the molecular structure of 3-nitrobenzoic acid when approaching a metal surface. It is a schematic diagram which shows the molecular structure of 3-nitrobenzoic acid when couple | bonding with a metal surface. It is a figure which shows the Fourier-transform infrared spectroscopy (FT-IR) spectrum measured when analyzing reaction of 3-nitrobenzoic acid and silver. 6A and 6B are schematic views showing the mechanism of ion exchange of the ion trapping agent. FIG. 7A is a schematic cross-sectional view illustrating a process of manufacturing a sealing material by a transfer molding method to obtain a semiconductor device, and FIG. 7B is a schematic diagram illustrating a process of manufacturing a sealing material by a transfer molding method to obtain a semiconductor device. FIG. FIG. 8A is a schematic cross-sectional view showing a process for obtaining a semiconductor device by producing a sealing material by a compression molding method, and FIG. 8B is a schematic diagram showing a process for obtaining a semiconductor device by producing a sealing material by a compression molding method. FIG.

  Embodiments of the present invention will be described below.

  The sealing resin composition according to the present embodiment (hereinafter referred to as composition (X)) contains an epoxy resin (A), a phenol compound (B), and an aromatic monocarboxylic acid (C). The epoxy resin (A) contains an epoxy resin (A1) represented by the following formula (1). The phenol compound (B) contains a phenol compound (B1) represented by the following formula (2). The aromatic monocarboxylic acid (C) has at least one electron-withdrawing functional group selected from the group consisting of a nitro group, a cyano group, and a hydroxyl group.

  In formula (1), n is in the range of 1.0 to 3.5 on the average, and m is in the range of 1.0 to 9.0 on the average.

  In formula (2), n is in the range of 1.0 to 2.0 on the average, and m is in the range of 1.0 to 9.0 on the average.

  The sealing material 62 in the semiconductor device 1 can be produced by molding the composition (X) by, for example, a pressure molding method. For example, as shown in FIG. 1, the semiconductor device 1 includes a metal lead frame 52, a semiconductor element 50 mounted on the lead frame 52, and wires 56 that electrically connect the semiconductor element 50 and the lead frame 52. And a sealing material 62 that seals the semiconductor element 50.

  Thus, the composition (X) can be used for producing the sealing material 62. This sealing material 62 can have high adhesion to the lead frame 52 even when the lead frame 52 includes the plating layer 54, and also has high adhesion to the lead frame 52 even at high temperatures. Can do.

It is preferable that the composition (X) does not contain a sulfur compound or the content of the sulfur compound in the composition (X) is small. In particular, the sulfur content of the composition (X) measured by fluorescent X-ray analysis is preferably 0.1% by mass or less in terms of SO ₃ . In this case, even if the wire 56 contains at least one of copper and silver, the wire 56 is hardly corroded under high temperature. In recent years, silver or copper has been used instead of gold as the material of the wire 56. However, even if the wire 56 contains at least one of copper and silver, the composition (X) is a sulfur compound. If the content of sulfur compound is small, the wire 56 is hardly corroded at high temperature. In addition, since the composition (X) contains the aromatic monocarboxylic acid (C) even if the sulfur compound is not contained or the content of the sulfur compound is small, the encapsulant 62 includes the lead frame 52. And high adhesiveness.

  Furthermore, the composition (X) is unlikely to have a long gel time due to improved adhesion. For this reason, the shaping | molding cycle at the time of preparation of the semiconductor device 1 can be shortened by shortening the gel time of composition (X).

  The composition of the composition (X) will be described in more detail.

  The epoxy resin (A) will be described. As described above, the epoxy resin (A) contains the epoxy resin (A1) represented by the formula (1). N in the formula (1) is within the range of 1.0 to 3.5 on average as described above. For this reason, the favorable fluidity at the time of shaping | molding of composition (X) and the favorable heat resistance of hardened | cured material are realizable with sufficient balance. Moreover, it is preferable that m in Formula (1) exists in the range of an average 1.0-3.0. In this case, good fluidity at the time of molding the composition (X) and good heat resistance of the cured product can be realized with a better balance.

  The epoxy resin (A) can contain components other than the epoxy resin (A1) (hereinafter referred to as epoxy resin (A2)). The epoxy resin (A2) can contain at least one component selected from the group consisting of, for example, a glycidyl ether type epoxy resin, a glycidyl amine type epoxy resin, a glycidyl ester type epoxy resin, and an olefin oxidation type (alicyclic) epoxy resin. . More specifically, the epoxy resin is, for example, an alkylphenol novolak type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolak type epoxy resin; a naphthol novolak type epoxy resin; a phenol aralkyl type epoxy resin having a skeleton such as a phenylene skeleton or a biphenylene skeleton; Biphenyl aralkyl type epoxy resin; Naphthol aralkyl type epoxy resin having a skeleton such as a phenylene skeleton or a biphenylene skeleton; Multifunctional type epoxy resin such as triphenol methane type epoxy resin or alkyl-modified triphenol methane type epoxy resin; Triphenyl methane type epoxy resin; Tetrakisphenol ethane type epoxy resin; dicyclopentadiene type epoxy resin; stilbene type epoxy resin; Bisphenol type epoxy resin; Biphenyl type epoxy resin; Naphthalene type epoxy resin; Alicyclic epoxy resin; Bromine containing epoxy resin such as bisphenol A type bromine containing epoxy resin; Diaminodiphenylmethane; A kind selected from the group consisting of glycidylamine type epoxy resins obtained by reaction of polyamines such as isocyanuric acid with epichlorohydrin; and glycidyl ester type epoxy resins obtained by reaction of polybasic acids such as phthalic acid and dimer acid with epichlorohydrin. The above components can be contained.

  In order to improve the moisture resistance reliability of the sealing material 62, it is preferable that the ionic impurities such as Na ions and Cl ions in the epoxy resin (A) are as small as possible.

  The amount of the epoxy resin (A) with respect to the entire composition (X) is preferably in the range of 5 to 35% by mass. In this case, the fluidity of the composition (X) during molding and the physical properties of the sealing material 62 are improved.

  The phenol compound (B) will be described. The phenol compound (B) contains the phenol compound (B1) represented by the formula (2) as described above. N in the formula (2) is within the range of 1.0 to 2.0 on average as described above. For this reason, the favorable fluidity at the time of shaping | molding of composition (X) and the favorable heat resistance of hardened | cured material are realizable with sufficient balance. Moreover, it is preferable that m in Formula (1) exists in the range of an average 1.0-3.0. In this case, good fluidity at the time of molding the composition (X) and good heat resistance of the cured product can be realized with a better balance.

  A phenol compound (B) can contain components (henceforth a phenol compound (B2)) other than a phenol compound (B1). The phenol compound (B2) is, for example, a novolak type resin such as a phenol novolak resin, a cresol novolak resin, or a naphthol novolak resin; a phenol aralkyl resin having a phenylene skeleton or a biphenylene skeleton; an aralkyl type resin such as a naphthol aralkyl resin having a phenylene skeleton or a biphenylene skeleton; Polyfunctional phenolic resins such as triphenolmethane type resins; dicyclopentadiene type phenolic resins such as dicyclopentadiene type phenol novolak resins and dicyclopentadiene type naphthol novolac resins; terpene modified phenolic resins; bisphenol type resins such as bisphenol A and bisphenol F; And at least one component selected from the group consisting of triazine-modified novolak resins It can contain. In particular, the phenol compound (B2) preferably contains at least one of a phenol aralkyl type phenol resin and a biphenyl aralkyl type phenol resin.

  It is preferable that an epoxy resin (A) exists in the range of 0.9-1.5 equivalent with respect to 1 equivalent of a phenol compound (B). In this case, the sealing material 62 can have particularly high adhesion even at high temperatures, and the composition (X) can have good storage stability. More preferably, the epoxy resin (A) is in the range of 1.0 to 1.3 equivalents.

  The amount of the epoxy resin (A1) with respect to the entire epoxy resin (A) is in the range of 80 to 100% by mass, and the amount of the phenol compound (B1) with respect to the entire phenolic compound (B) is 49% by mass or less. It is preferable that there is. In this case, the semiconductor device can have particularly high reliability, and wire sweep in the semiconductor device can be particularly suppressed. It is more preferable if the amount of the phenol compound (B1) is in the range of 30 to 49% by mass.

  The amount of the epoxy resin (A1) with respect to the entire epoxy resin (A) is 79% by mass or less, and the amount of the phenol compound (B1) with respect to the entire phenolic compound (B) is within a range of 50 to 100% by mass. It is also preferable that there is. In this case, the semiconductor device can have particularly high reliability, and wire sweep in the semiconductor device can be particularly suppressed. It is more preferable that the amount of the epoxy resin (A1) with respect to the entire epoxy resin (A) is in the range of 50 to 79% by mass.

  The aromatic monocarboxylic acid (C) will be described. The aromatic monocarboxylic acid (C) preferably has an aromatic ring, one carboxyl group bonded to the aromatic ring, and at least one electron-withdrawing functional group bonded to the aromatic ring. The aromatic ring is particularly preferably a benzene ring or a naphthalene ring.

  The aromatic monocarboxylic acid (C) preferably has no halogen atom or sulfur atom. In this case, corrosion of the silver or copper wire 56 caused by the aromatic monocarboxylic acid (C) is suppressed.

  The electron withdrawing functional group is selected from the group consisting of a nitro group, a cyano group and a hydroxyl group as described above. The aromatic monocarboxylic acid (C) may have one electron-withdrawing functional group or may have a plurality of electron-withdrawing functional groups.

  The aromatic monocarboxylic acid (C) is represented, for example, by the following formula (3).

^One of R ^{1 to} R ⁵ in the formula (3) is an electron-withdrawing functional group, and the remaining four are each independently H, an organic group, or an electron-withdrawing functional group. The organic group is preferably a group that does not affect the properties of the aromatic monocarboxylic acid (C). The organic group is preferably an alkyl group, an alkenyl group or an alkoxy group, and particularly preferably CH ₃ . It is particularly preferred if one of R ^{1 to} R ⁵ is an electron-withdrawing functional group and the remaining four are each independently H or an organic group.

  The aromatic monocarboxylic acid (C) particularly preferably contains nitrobenzoic acid. Aromatic monocarboxylic acid (C) is 2-nitrobenzoic acid, 3-nitrobenzoic acid, 4-nitrobenzoic acid, 3-methyl-4nitrobenzoic acid, 2-methyl-3-nitrobenzoic acid, 4-methyl. -3-nitrobenzoic acid, 2-methyl-6-nitrobenzoic acid, 3-methyl-2-nitrobenzoic acid, 2-methyl-5-nitrobenzoic acid, 5-methyl-2-nitrobenzoic acid, 2-cyano Benzoic acid, 3-cyanobenzoic acid, 4-cyanobenzoic acid, 4-hydroxy-3-nitrobenzoic acid, 5-hydroxy-2-nitrobenzoic acid, 3-hydroxy-4-nitrobenzoic acid, 3-hydroxy-2 It is also preferable to contain at least one component selected from the group consisting of -nitrobenzoic acid, 2-hydroxy-4-nitrobenzoic acid and 2-hydroxy-5-nitrobenzoic acid.

  The melting point of the aromatic monocarboxylic acid (C) is preferably 200 ° C. or lower. In this case, when preparing the composition (X) by heating and mixing the constituent components of the composition (X), mixing can be performed without increasing the heating temperature. Therefore, when the aromatic monocarboxylic acid (C) contains nitrobenzoic acid, the nitrobenzoic acid preferably contains at least one of 2-nitrobenzoic acid and 3-nitrobenzoic acid. The aromatic monocarboxylic acid (C) may contain 4-nitrobenzoic acid having a melting point of 200 ° C. or higher. In that case, in order to sufficiently mix the components, 4-nitro in the components The types of ingredients other than benzoic acid, the blending amount, etc. are restricted.

  Since the composition (X) contains the aromatic monocarboxylic acid (C), the sealing material 62 produced from the composition (X) has high adhesion to the lead frame 52 including the plating layer 54. This high adhesion is presumed to be realized by the following mechanism.

  In the aromatic monocarboxylic acid (C) in the composition (X), since the electron-withdrawing functional group attracts electrons in the aromatic ring, protons are eliminated from the carboxyl group as shown in FIG. Ions are easily generated. Therefore, when the sealing material 62 is manufactured, the composition (X) comes into contact with the lead frame 52, so that the aromatic monocarboxylic acid (C) approaches the lead frame 52 as shown in FIG. When the product (X) is heated, as shown in FIG. 4, hydrogen is released from the carboxyl group of the substituted aromatic monocarboxylic acid to generate a carboxylate anion, and this carboxylate anion constitutes the lead frame 52. It tends to form salts with metals. 3 and 4, M indicates a metal in the lead frame 52. Therefore, an aromatic monocarboxylic acid (C) bonded to the lead frame 52 is disposed in the vicinity of the interface between the sealing material 62 and the lead frame 52, and the lead frame 52 is a film made of an aromatic monocarboxylic acid (C). It will be covered with. Since this aromatic monocarboxylic acid (C) has an aromatic ring, it has a high affinity for the sealing material 62 containing an organic substance. For this reason, it is considered that high adhesion between the sealing material 62 and the lead frame 52 is realized.

  The above assumption is supported by the following test results. 3-Nitrobenzoic acid was selected as an example of the aromatic monocarboxylic acid (C), and a mixture obtained by mixing the 3-nitrobenzoic acid and silver powder was dropped onto the surface of a silver plate. The mixture on this plate was heated at 175 ° C. for 30 seconds. Analysis by diffuse reflection Fourier transform infrared spectroscopy was performed on the mixture before heating and the mixture after heating. The chart thus obtained is shown in FIG. The solid line in FIG. 5 shows the chart before heating, and the broken line shows the chart after heating. In the chart after heating, the intensity of the peak derived from the carboxylic acid indicated by reference numeral 10 is increased compared to the chart before heating, and the peak derived from the carbonyl skeleton indicated by reference numeral 20 is on the higher wavenumber side. There is a shift. This result shows that the salt of carboxylic acid increases after heating. This is presumably because the aromatic monocarboxylic acid (C) was bonded to the silver plate by heating to produce a carboxylic acid salt.

  In order for the sealing material 62 to have high adhesion to the lead frame 52 by the above mechanism, it is preferable that the pKa of the aromatic monocarboxylic acid (C) is not too high. Specifically, the pKa of the aromatic monocarboxylic acid (C) is preferably 4 or less. When the pKa is 4 or less, the carboxyl group in the aromatic monocarboxylic acid (C) is easily anionized, and a metal and a salt constituting the lead frame 52 are easily formed. It is particularly preferable if the pKa is 3.4 or less.

  The above inference is based on an analysis in the case where the aromatic monocarboxylic acid (C) has a nitro group, but the same inference can be made even when the aromatic monocarboxylic acid (C) has a cyano group or a hydroxyl group. It holds.

  The reactivity between the epoxy resin (A) and the electron-withdrawing functional group in the aromatic monocarboxylic acid (C) is preferably low. In this case, even if the composition (X) is heated, the aromatic monocarboxylic acid (C) is suppressed from being fixed by reacting with the epoxy resin (A). For this reason, the aromatic monocarboxylic acid (C) can easily form a salt with the metal constituting the lead frame 52. Therefore, it is preferable to select a combination of the epoxy resin (A) and the electron-withdrawing substituent so that the reactivity between the epoxy resin (A) and the electron-withdrawing substituent is low.

  In the present embodiment, as described above, even if the composition (X) contains the aromatic monocarboxylic acid (C) for improving the adhesion, the gel time of the composition (X) is unlikely to become long. This is presumably because the aromatic monocarboxylic acid (C) has only one carboxyl group, and therefore the amount of protons released from the aromatic monocarboxylic acid (C) is not excessive. This will be described in more detail. Protons inactivate the basic curing accelerator (E) in the composition (X), which may cause an increase in gel time. However, in this embodiment, since aromatic monocarboxylic acid (C) has only one carboxyl group, the amount of protons released from aromatic monocarboxylic acid (C) is not large. For this reason, deactivation of the curing accelerator (E) by protons is suppressed, and as a result, it is considered that the gel time is unlikely to become long.

  In order to suppress the deactivation of the curing accelerator (E) by protons, the composition (X) is a carboxylic acid other than the aromatic monocarboxylic acid (C), such as an aromatic polyvalent carboxylic acid having an electron-withdrawing functional group. It is preferable not to contain an acid. Even when the composition (X) contains a carboxylic acid other than the aromatic monocarboxylic acid (C), the carboxylic acid other than the aromatic monocarboxylic acid (C) is 0.3% by mass relative to the entire composition (X). The following is preferable.

  The amount of the aromatic monocarboxylic acid (C) is preferably in the range of 0.001 to 0.5 mass% with respect to the composition (X). When the amount of the aromatic monocarboxylic acid (C) is 0.001% by mass or more, the adhesion between the sealing material 62 and the lead frame 52 is particularly high. When the amount of the aromatic monocarboxylic acid (C) is 0.5% by mass or less, the deactivation of the curing accelerator (E) by protons is particularly suppressed, and the gel time is particularly suppressed from increasing.

  The composition (X) preferably contains an ion trap agent (D). The ion trapping agent (D) has a function of trapping free ions such as chlorine ions in the composition (X).

  Further, when the composition (X) contains the ion trapping agent (D) together with the aromatic monocarboxylic acid (C), the adhesion between the sealing material 62 and the lead frame 52 can be further improved. When the ion trapping agent (D) contains an ion trapping agent having ion exchange properties, the effect is remarkable. One of the reasons is that the ion trap agent (D) can maintain the pH of the composition (X) between 5.0 and 7.5, which means that the aromatic monocarboxylic acid (C) is sealed. It is inferred that this is to enhance the effect of bringing the material 62 into close contact with the lead frame 52.

  The pH of the composition (X) is measured, for example, as follows. The composition (X) is molded at a mold temperature of 170 ° C. to produce a disk-shaped molded body having a diameter of 60 mm and a thickness of 2 mm, and this molded body is further heated at 175 ° C. for 6 hours. The molded body is pulverized with a stamp mill and then passed through a 150 μm mesh sieve. The powder that has passed through the sieve is used as a sample for pH measurement. 5 g of this sample is put in a container made of Teflon (registered trademark) and moistened with 4 mL of methanol, and then 46 mL of ion-exchanged water is added to the container and heated at 120 ° C. for 24 hours. Thereby, a test solution for pH measurement is obtained. With the temperature of the test solution maintained at 25 ° C. ± 1 ° C., the pH of the test solution is measured with a pH meter. This measurement result can be regarded as the pH of the composition (X).

  The mechanism by which the ion trap agent (D) adjusts the pH of the composition (X) will be described.

6A and 6B, an ion trapping agent (D) is, Cl ^- is a schematic view showing a state of raising the pH of such anions 72 caught and composition (X). FIG. 6A is a schematic diagram showing the ion trapping agent (D) before adsorbing the anions 72. In FIG. 6A and FIG. 6B, the ion trapping agent (D) is denoted by reference numeral 70. In FIG. 6A, the ion trap agent (D) captures the OH group 76. In FIG. 6A, anions 72 exist around the ion trapping agent (D). FIG. 6B shows the ion trapping agent (D) in a state where the anions 72 are captured.

  An ion exchange reaction in which the ion trapping agent (D) adjusts the pH of the composition (X) when the ion trapping agent (D) is a metal hydroxide will be described.

The cation exchange reaction of the ion trapping agent (D) is represented by, for example, the following formula (4) or (5). In the formulas (4) and (5), T is an ion trapping agent (D), and M ⁺ is a cation. The pH of the composition (X) is lowered by the reaction of the formula (4) or (5). This cation exchange reaction is likely to proceed in a basic environment. For this reason, the raise of composition (X) pH is suppressed by a cation exchange reaction.

T-OH + M ⁺ → T-OM + H ⁺ (4)
^{T-OH + M + + OH} - → T-OM + H 2 O (5)
The anion exchange reaction of the ion trapping agent (D) is represented by, for example, the following formula (6) or (7). In the formulas (6) and (7), T is an ion trapping agent (D), and A ⁻ is an anion. The pH of the composition (X) is increased by the reaction of the formula (6) or (7). Anion exchange reactions are likely to proceed in an acidic environment. For this reason, the fall of pH of composition (X) is suppressed by an anion exchange reaction.

^{T-OH + A - → R} -A + OH - (6)
^{T-OH + A - + H} + → R-OH 2 · A (7)
As described above, the reaction represented by the formula (4) or (5) is dominant in a basic environment, and the reaction represented by the formula (6) or (7) is dominant in an acidic environment. The pH of (X) is adjusted. Thereby, the ion trap agent (D) can adjust the pH of the composition (X) within the range of 5.0 to 7.5, preferably within the range of 6.0 to 6.5. .

  The effect of the pH of the composition (X) will be described in detail.

If pH of composition (X) is less than 5.0, the effect | action which makes the sealing material 62 by aromatic monocarboxylic acid (C) contact | adhere to a lead frame will fall. The reason is that when the pH is less than 5.0, the amount of proton (H ⁺ ) contained in the sealing material 62 is excessive, and therefore the aromatic monocarboxylic acid (C) and the metal M in the lead frame 52 It is assumed that this reaction (see FIGS. 3 and 4) is difficult to proceed.

When the pH of the composition (X) is higher than 7.5, cations such as Mg ²⁺ , Ca ²⁺ and Na ⁺ in the sealing material 62 increase. The cation in the sealing material 62 inhibits the reaction between the aromatic monocarboxylic acid (C) and the metal M in the lead frame 52 (see FIGS. 3 and 4). It is presumed that this will lead to a decrease in the adhesive strength.

  On the other hand, when the pH of the composition (X) is in the range of 5.0 to 7.5, preferably in the range of 6.0 to 6.5, the aromatic monocarboxylic acid (C) and the metal surface The reactivity of becomes higher.

  The amount of the ion trapping agent (D) with respect to the composition (X) is preferably in the range of 0.05 to 0.6% by mass. When the amount of the ion trapping agent (D) is 0.05% by mass or more, the pH adjusting function by the ion trapping agent (D) is enhanced. Even if the amount of the ion trapping agent (D) is more than 0.6% by mass, the pH adjusting function of the ion trapping agent (D) cannot be increased.

  The ion trapping agent (D) preferably contains a compound having at least one of carbonate ion and hydroxide ion. In this case, the ion trapping agent (D) can cause the ion exchange reaction as described above for adjusting the pH of the composition (X).

  The ion trapping agent (D) preferably contains a compound of aluminum and magnesium.

  The ion trapping agent (D) also preferably contains a metal element hydrous oxide. The metal element hydrous oxide contains at least one component selected from the group consisting of, for example, aluminum hydrous oxide, bismuth hydrous oxide, titanium hydrous oxide, and zirconium hydrous oxide.

The ion trap agent (D) particularly preferably contains a hydrotalcite compound. An example of a typical structure of the hydrotalcite compound is [M ²⁺ _1-x M ³⁺ _x (OH) ₂ ] [A ^n- _{x / n} · mH ₂ O].

It is particularly preferred if the hydrotalcite compound is a hydrated oxide of aluminum and magnesium having at least one of carbonate ion and hydroxide ion. In this case, the ion trap agent (D) can have particularly high ion trap performance. Examples of such hydrotalcite compounds include Mg—Al—CO ₃ hydrotalcite compounds. An example of a typical structure of the Mg—Al—CO ₃ hydrotalcite compound is [Mg _1−x Al _x (OH) ₂ ] ^{x +} [(CO ₃ ) _{x / 2} · mH ₂ O] ^x− is there.

  Bi-based ion trapping agents tend to make the composition (X) acidic, and adsorption-type ion trapping agents tend to desorb trapped anions compared to ion trapping agents that have ion exchange properties. For this reason, it is preferable that an ion trap agent (D) does not contain a Bi type ion trap agent and an adsorption type ion trap agent.

  The weight reduction rate of the hydrotalcite-based compound when heated at a rate of temperature increase of 20 ° C./min from 25 ° C. to 800 ° C. is preferably in the range of 10 to 70%. The weight reduction rate can be measured with a commercially available thermogravimetric / differential calorimeter (TG-DTA). If the weight reduction rate is in the above range, the content of at least one of carbonate ions and hydroxide ions in the hydrotalcite compound is high, so the pH of the composition (X) is 5.0 to 7.5. Easy to be maintained within the range. If the weight reduction rate is in the range of 10 to 50%, the pH of the composition (X) is more easily maintained in the range of 5.0 to 7.5. The weight loss rate of hydrotalcite compounds in a temperature range (for example, 220 ° C. to 600 ° C., or 220 ° C. to 800 ° C.) excluding a temperature range (for example, 180 ° C. to 210 ° C.) where dehydration of interlayer water occurs 10% or more is more preferable, 15% or more is more preferable, and 20% or more is particularly preferable.

  The hydrotalcite compound in the composition (X) can be detected by, for example, ion chromatography. If the amount of the hydrotalcite compound in the composition (X) is 200 ppm or more, the hydrotalcite compound can be detected by ion chromatography. If the amount of the hydrotalcite-based compound in the composition (X) is 200 ppm or more, the effect of maintaining the pH of the composition (X) within the range of 5.0 to 7.5 can be sufficiently obtained.

  As described above, the composition (X) preferably contains a curing accelerator (E). Examples of the curing accelerator (E) include 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, and imidazoles such as 2-ethyl-4-methylimidazole; 1,8-diazabicyclo [5.4.0]. Cycloamidines such as undecene-7,1,5-diazabicyclo [4.3.0] nonene-5,5,6-dibutylamino-1,8-diazabicyclo [5.4.0] undecene-7; Tertiary amines such as (dimeraminomethyl) phenol, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; tributylphosphine, methyldiphenylphosphine, triphenylphosphine, tris ( 4-methylphenyl) phosphine, di Organic phosphines such as phenyl phosphine, triphenylphosphine and parabenzoquinone addition reaction, phenylphosphine; tetrasubstituted phosphoniums such as tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium ethyltriphenylborate, tetrabutylphosphonium tetrabutylborate A tetra-substituted borate; a quaternary phosphonium salt having a counteranion other than borate; and a tetraphenylboron salt such as 2-ethyl-4-methylimidazole tetraphenylborate, N-methylmorpholine tetraphenylborate, or the like. It can contain at least one component. It is preferable that a hardening accelerator (E) does not contain a halogen and sulfur element. When the curing accelerator (E) contains imidazole, the imidazole can also function as a curing agent.

  A hardening accelerator (E) exists in the range of 0.001-0.5 mass% with respect to composition (X), for example.

  The composition (X) preferably contains an inorganic filler (F). The inorganic filler (F) can contain at least one component selected from the group consisting of fused silica such as fused spherical silica, crystalline silica, alumina, and silicon nitride. The thermal expansion coefficient of the sealing material 62 can be adjusted by including the inorganic filler (F) in the composition (X). In particular, the inorganic filler (F) preferably contains fused silica. In this case, high filling property of the inorganic filler (F) in the composition (X) and high fluidity of the composition (X) at the time of molding can be obtained. It is also preferable that the inorganic filler (F) contains at least one component selected from the group consisting of alumina, crystalline silica, and silicon nitride. In this case, high thermal conductivity of the sealing material 62 is obtained.

  The average particle diameter of the inorganic filler (F) is, for example, in the range of 0.2 to 70 μm. When the average particle size is in the range of 0.5 to 20 μm, particularly good fluidity can be obtained when the composition (X) is molded. The average particle diameter is a volume-based median diameter calculated from the measured value of the particle size distribution by the laser diffraction / scattering method, and is obtained using a commercially available laser diffraction / scattering particle size distribution measuring apparatus.

  The inorganic filler (F) may contain two or more kinds of components having different average particle diameters in order to adjust the viscosity of the composition (X) during molding, the physical properties of the sealing material 62, and the like.

  It is preferable that an inorganic filler (F) exists in the range of 60-93 mass% with respect to composition (X) whole quantity. If the amount of the inorganic filler (F) is too small, the linear expansion coefficient of the sealing material 62 increases, so that the warp of the semiconductor device 1 during reflow or the like may increase. On the other hand, when there are too many inorganic fillers (F), sufficient fluidity | liquidity of composition (X) is not ensured, and a wire sweep may become large at the time of shaping | molding.

  The composition (X) may contain a coupling agent. The coupling agent can improve the affinity between the inorganic filler (X), the epoxy resin (A), and the phenol compound (B). The coupling agent can also improve the adhesion of the sealing material 62 to the lead frame 52.

  The coupling agent preferably contains at least one component selected from the group consisting of, for example, a silane coupling agent, a titanate coupling agent, an aluminum coupling agent, and an aluminum / zirconium coupling agent. Examples of the silane coupling agent include glycidoxysilanes such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane; N From the group consisting of amino silanes such as -β (aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane; alkyl silanes; ureido silanes; It is preferable to contain at least one selected component.

  The amount of the coupling agent is preferably in the range of 0.1 to 2.0% by mass with respect to the total amount of the inorganic filler (F) and the coupling agent.

  The epoxy resin (A) preferably has no nitro group, and the phenolic compound (B) also preferably has no nitro group. In this case, an excessive increase in the total amount of nitro groups present in the composition (X) can be suppressed, and deterioration of the electrical characteristics of the sealing material 62 due to the nitro groups can be suppressed. Further, if the phenol compound (B) does not have a nitro group, the nucleophilicity of the phenol compound (B) is not lowered by the nitro group. For this reason, the favorable reactivity of the phenol compound (B) with respect to an epoxy resin (A) is maintained, and it becomes suppressed especially that gel time becomes long.

  When the composition (X) contains the ion trap material (E), the ion trap material (E) also preferably has no nitro group. When composition (X) contains an inorganic filler (F), it is preferable that the inorganic filler (F) also has no nitro group. In these cases, deterioration of the electrical characteristics of the sealing material 62 can be particularly suppressed.

  The composition (X) may contain additives other than the above components as long as the effects of the present embodiment are not impaired. Examples of additives include mold release agents, flame retardants, colorants, and low stress agents.

  The release agent may contain at least one component selected from the group consisting of carnauba wax, stearic acid, montanic acid, carboxyl group-containing polyolefin, ester wax, polyethylene oxide, and metal soap, for example.

  The flame retardant can contain, for example, at least one component selected from the group consisting of magnesium hydroxide, aluminum hydroxide, and red phosphorus.

  The colorant can contain, for example, at least one component selected from the group consisting of carbon black, bengara, titanium oxide, phthalocyanine, and perylene black.

  The stress reducing agent can contain, for example, at least one component selected from the group consisting of silicone elastomers, silicone resins, silicone oils, and butadiene rubbers. The butadiene rubber can contain at least one component of, for example, methyl acrylate-butadiene-styrene copolymer and methyl methacrylate-butadiene-styrene copolymer.

  The composition (X) can be prepared by mixing the components of the composition (X) as described above. More specifically, for example, components including an epoxy resin (A), a phenol compound (B), an aromatic monocarboxylic acid (C), an inorganic filler (F), and a curing accelerator (E) are mixed with a mixer, a blender. Until the mixture is sufficiently uniform, and then melted and mixed in a heated state by a kneader such as a hot roll or a kneader, and then cooled to room temperature. A powdery composition (X) can be produced by pulverizing the resulting mixture by a known means. The composition (X) may not be in the form of powder, for example, in the form of a tablet. It is preferable that the composition (X) in the case of a tablet has dimensions and masses suitable for molding conditions.

  The composition (X) is preferably a solid at 25 ° C. In this case, the sealing material 62 can be obtained by molding the composition (X) by a pressure molding method such as an injection molding method, a transfer molding method, or a compression molding method. It is more preferable if the composition (X) is solid at any temperature within the range of 15 to 25 ° C, and it is particularly preferable if the composition (X) is solid at any temperature within the range of 5 to 35 ° C.

  In order for the composition (X) to be solid, the epoxy resin (A) and the phenol compound (B) are preferably solid. In addition, even if a liquid component is contained in the epoxy resin (A) and the phenol compound (B), and the liquid component is contained in the composition (X), the solid in the composition (X) The composition (X) may be regarded as a solid as a whole, for example, when the component in the form of absorbing the liquid component.

  The elastic modulus at 25 ° C. of the composition (X) is preferably 0.3 MPa or more. In this case, the composition (X) is easily molded by a pressure molding method such as an injection molding method, a transfer molding method, or a compression molding method. The elastic modulus is preferably in the range of 0.3 to 350,000 MPa. The elastic modulus of the composition (X) can be controlled by appropriately setting the composition of the composition (X) within the range of the present embodiment.

  The spiral flow length at 120 ° C. of the composition (X) is preferably 1 cm or more. In this case, the fluidity at the time of molding of the composition (X) becomes good. The spiral flow length is preferably in the range of 1 to 200 cm. It is also preferable that the spiral flow length at 160 ° C. of the composition (X) is in the range of 20 to 250 cm. In this case, unfilling of the sealing material 62 due to deterioration of the fluidity of the composition (X) at the time of molding, so-called weld void is unlikely to occur, and the semiconductor element 50 and the lead frame 52 are connected at the time of molding. The existing wire 56 is not easily damaged. The spiral flow length of the composition (X) can be controlled by appropriately setting the composition of the composition (X) within the range of the present embodiment.

  The gel time of the composition (X) is preferably in the range of 10 to 100 seconds. In this case, the molding cycle for producing the sealing material 62 is particularly short, and the productivity of the semiconductor device 1 is particularly high. As for gel time, when the torque was measured while heating the composition (X) at 175 ° C. using a Clastometer VPS type manufactured by JSR Trading Co., Ltd., the measured value of torque was 0. It is defined as the time required to reach 05 (N / m).

  An example of the semiconductor device 1 including the sealing material 62 manufactured from the composition (X) and a manufacturing method thereof will be described.

  The semiconductor device 1 is, for example, an insert type package such as Mini, D pack, D2 pack, To22O, To3P, dual in-line package (DIP), quad flat package (QFP), or small outline package (SOP). , Small outline, J lead package (SOJ), surface mount type package.

  FIG. 1 shows a cross-sectional view of a semiconductor device 1 in the present embodiment. The semiconductor device 1 encapsulates a metal lead frame 52, a semiconductor element 50 mounted on the lead frame 52, a wire 56 that electrically connects the semiconductor element 50 and the lead frame 52, and the semiconductor element 50. And a sealing material 62 to be stopped.

  In the present embodiment, the lead frame 52 includes a die pad 58, inner leads 521, and outer leads 522. The lead frame 52 is made of, for example, copper or an iron alloy such as 42 alloy. The lead frame 52 preferably includes a plating layer 54. In this case, corrosion of the lead frame 52 is suppressed. The plating layer 54 preferably contains at least one component of silver, nickel, and palladium. The plating layer 54 may contain only one kind of metal among silver, nickel and palladium, or may contain an alloy containing at least one kind of metal among silver, nickel and palladium. The plated layer 54 may have a laminated structure, specifically, for example, may have a laminated structure including a palladium layer, a nickel layer, and a gold layer. The thickness of the plating layer 54 is, for example, in the range of 1 to 20 μm, but is not particularly limited thereto.

  The semiconductor element 50 is fixed on the die pad 58 of the lead frame 52 with an appropriate die bonding material 60. As a result, the semiconductor element 50 is mounted on the lead frame 52. The semiconductor element 50 is, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, or a solid-state imaging element. The semiconductor element 50 may be a new power device such as SiC or GaN.

  Subsequently, the semiconductor element 50 and the inner lead 521 in the lead frame 52 are connected by a wire 56. The wire 56 may be made of gold, but may include at least one of copper and silver. For example, the wire 56 may be made of silver or copper. When the wire 56 includes at least one of copper and silver, the wire 56 may be coated with a thin film of metal such as palladium.

  Then, the sealing material 62 which seals the semiconductor element 50 is formed by shape | molding composition (X). The sealing material 62 also seals the wire 56. The sealing material 62 also seals the die pad 58 and the inner lead 521, so that the sealing material 62 is in contact with the lead frame 52, and in the case where the lead frame 52 includes the plating layer 54, it is in contact with the plating layer 54.

  It is preferable to produce the sealing material 62 by molding the sealing composition by a pressure molding method. The pressure molding method is, for example, an injection molding method, a transfer molding method, or a compression molding method.

  An example of a method for producing the sealing material 62 by the transfer molding method is schematically shown in FIGS. 7A and 7B. In this example, the lead frame 52 on which the semiconductor element 50 is mounted is disposed in a transfer molding die 31 as shown in FIG. 7A. In this state, the composition (X) indicated by reference numeral 4 is heated and melted, and then injected into the mold 31. The composition (X) is cured by further heating the composition (X) in the mold 31. Thereby, the sealing material 62 is produced, and the semiconductor device 1 including the lead frame 52, the semiconductor element 50, the wire 56, and the sealing material 62 is obtained. Subsequently, the mold 31 is opened, and the semiconductor device 1 is taken out from the mold 31 as shown in FIG. 7B.

  An example of a method for producing the sealing material 62 by compression molding is schematically shown in FIGS. 8A and 8B. In this example, as shown in FIG. 8A, a lead frame 52 in which a semiconductor element 50 is mounted between an upper die 33 and a lower die 34 constituting a compression molding die 32 and a composition indicated by reference numeral 4. (X) is arranged. Subsequently, the upper mold 33 and the lower mold 34 are brought close to each other while the upper mold 33 and the lower mold 34 are heated. Thereby, the composition (X) is cured by being heated in the mold 32 while being pressurized. Thereby, the sealing material 62 is produced, and the semiconductor device 1 including the lead frame 52, the semiconductor element 50, the wire 56, and the sealing material 62 is obtained. Subsequently, the mold 32 is opened, and the semiconductor device 1 is taken out of the mold 32 as shown in FIG. 8B.

  The molding pressure when molding the composition (X) by pressure molding is preferably 3.0 MPa or more, and the molding temperature is preferably 120 ° C. or more. In this case, it is possible to obtain the semiconductor device 1 in which the semiconductor element 50 is sealed with the uniform sealing material 62 with less filling, so-called weld voids and internal voids.

  In particular, in the case of the transfer molding method, the injection pressure of the composition (X) into the mold is preferably 3 MPa or more, more preferably 4 to 710 MPa. Moreover, it is preferable that heating temperature (mold temperature) is 120 degreeC or more, and if it exists in the range of 160-190 degreeC, it is still more preferable. The heating time is preferably in the range of 30 to 300 seconds, and more preferably in the range of 60 to 180 seconds.

  In the transfer molding method, after the sealing material 62 is manufactured in a mold, the sealing material 62 is heated with the mold closed and post-curing is performed, and then the mold is opened and the semiconductor is opened. The device 1 is preferably removed. The heating conditions for post-curing are, for example, a heating time in the range of 160 to 190 ° C. and a heating time in the range of 2 to 8 hours.

  In the case of compression molding, the compression pressure is preferably 3 MPa or more, and more preferably in the range of 5.0 to 10 MPa. The heating temperature (mold temperature) is preferably 120 ° C. or higher, and more preferably in the range of 150 to 185. The heating time is preferably in the range of 60 to 300 seconds.

  In the semiconductor device 1 obtained in the present embodiment, the composition (X) does not contain a sulfur compound or the content of the sulfur compound is low, even though the lead frame 52 includes the plating layer 54. The stopper 62 has high adhesion with the lead frame 52. For this reason, even when the semiconductor device 1 is heated and when vibration is applied to the semiconductor device 1, the sealing material 62 is hardly peeled off from the lead frame 52.

  Further, since the composition (X) does not contain a sulfur compound or the content of the sulfur compound is low, the wire 56 in contact with the sealing material 62 is hardly corroded even under high temperature and high humidity. For this reason, poor conduction and disconnection are unlikely to occur in the semiconductor device 1 at high temperatures and high humidity, and thus the semiconductor device 1 has high reliability.

  In addition, the composition (X) is less prone to increase in gel time due to improved adhesion, so that the molding cycle during the production of the sealing material 62 can be shortened, and thus the production efficiency of the semiconductor device 1 can be reduced. Can be high.

  Hereinafter, the effect of the present embodiment will be described in more detail by way of examples. The present invention is not limited to these examples.

[Preparation of composition]
Ingredients shown in the “Composition” column of Tables 1 and 2 below were blended, uniformly mixed and dispersed with a mixer, heated and kneaded with a kneader at 100 ° C., and the resulting mixture was cooled and pulverized. . A tablet-like composition was obtained by tableting the powder thus obtained.

  When the composition was analyzed by diffuse reflection Fourier transform infrared spectroscopy, a peak derived from a nitro group was confirmed in the example, whereas a peak derived from a nitro group could not be confirmed in the comparative example.

Details of the components shown in Tables 1 and 2 are as follows.
Epoxy resin A: an epoxy resin having a structure represented by formula (1), wherein n in formula (1) is an average of 1.0 to 1.5, and m is an average of 1.0 to 3.0, Nippon Chemical Made by Pharmaceutical, product number NC3000, epoxy equivalent 284.
Epoxy resin B: an epoxy resin having a structure represented by formula (1), wherein n in formula (1) is an average of 2.0 to 3.5, and m is an average of 1.0 to 3.0, Nippon Kayaku Product number NC-3500, epoxy equivalent 209.
Epoxy resin C: biphenyl type epoxy resin, manufactured by Mitsubishi Chemical, product number YX4000, epoxy equivalent 186.
Phenol compound A: a phenol compound having a structure represented by formula (2), wherein n in formula (2) is an average of 1.0 to 2.0, and m is an average of 1.0 to 3.0, manufactured by Meiwa Kasei , Part number MEH-7851SS.
Phenol compound B: a phenol compound having a structure represented by formula (2), wherein n in formula (2) is an average of 1.5 to 2.5, and m is an average of 1.0 to 3.0, manufactured by Meiwa Kasei , Part number MEH-7403H.
Phenol compound C: phenol aralkyl type phenol resin, manufactured by Meiwa Kasei Co., Ltd., product number MEH7800-3L.
Phenol compound D: Phenol novolac resin, manufactured by Meiwa Kasei Co., Ltd., product number H-1M.
3-nitrobenzoic acid: manufactured by Tokyo Chemical Industry, melting point 141-144 ° C.
4-cyanobenzoic acid: manufactured by Tokyo Chemical Industry, melting point 218-225 ° C.
Ion trapping agent A: Mg-Al-CO ₃ based hydrotalcite-based compound, manufactured by Kyowa Chemical Industry Co., Ltd., product number DHT-4H.
Ion trap agent B: Mg—Al—CO ₃ hydrotalcite compound Toa Gosei Co., Ltd. IXE770D.
Ion trap agent C: Antimony / bismuth ion trap material Toa Gosei Co., Ltd. IXE600
・ Curing accelerator: Triphenylphosphine, manufactured by Hokuko Chemical.
Filler: spherical fused silica, manufactured by Denki Kagaku Kogyo, product number FB940.
Silane coupling agent A: 3-mercaptopropyltrimethoxysilane, manufactured by Shin-Etsu Silicone, product number KBM803.
Silane coupling agent B: N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Silicone, product number KBM573.
-Mold release agent: Carnauba wax.
Pigment: Mitsubishi Chemical, product number MA600.

[Evaluation test]
The following evaluation tests were carried out on the composition, and these results are shown in Tables 1 and 2 below.

(1) Evaluation of SO ₃ equivalent sulfur amount Fluorescent X-ray analysis was performed on the composition, and based on the result, the sulfur content of the composition was calculated as an SO ₃ equivalent amount.

(2) Gel Time Evaluation Torque was measured while heating the composition at 175 ° C. using a curast meter VPS type manufactured by JSR Trading Co., Ltd. The time required from the start of heating until the measured torque value reached 0.05 (N / m) was investigated, and this time was defined as the gel time.

(3) Cu adhesion evaluation Using a mold, the composition was molded by a transfer molding method under the conditions of a mold temperature of 175 ° C., an injection pressure of 7.0 MPa, and a curing time of 120 seconds. A cured product was produced on a substrate made by Tokoro, product name KFC-H). The adhesion between the cured product and the substrate was measured with a bond tester manufactured by Dage. In the case where the lead frame includes a plated layer containing silver, the adhesion in this evaluation is preferably 25 MPa or more so that the sealing material is difficult to peel off from the lead frame during reflow of the semiconductor device.

(4) Ag adhesion evaluation Except having silver-plated the board | substrate, it evaluated by the same method as the case of said "Cu adhesion evaluation".

(5) Evaluation of reflow resistance A semiconductor element is mounted on a lead frame made of copper and partially provided with a silver plating layer, and the composition is gold by a transfer molding method using a multi-transfer press (manufactured by Apic Yamada) on the lead frame. A sealing material was produced by molding under conditions of a mold temperature of 175 ° C., an injection pressure of 7.0 MPa, and a curing time of 120 seconds. Then, the post-cure was performed by heating a sealing material at 175 degreeC for 6 hours. As a result, a rectangular LQFP (low profile quad flat package) having a size of 28 mm × 28 mm was obtained as a semiconductor device. The semiconductor device was subjected to moisture absorption treatment by being left in an atmosphere of 60 ° C. and 60% RH controlled by a constant temperature and humidity machine for 120 hours. Subsequently, using a far-infrared reflow furnace, the semiconductor device was subjected to a reflow process at a peak temperature of 265 ° C. Then, the presence or absence of peeling between the sealing material and the lead frame in the semiconductor device was confirmed using an ultrasonic survey apparatus. The case where peeling was not confirmed was evaluated as “good”, and the case where peeling was confirmed was evaluated as “bad”.

(6) Reliability evaluation A
A semiconductor element was mounted on a lead frame made of a copper alloy (manufactured by Kobe Steel, product name KFC-H) and partially provided with a silver plating layer, and the lead frame and the semiconductor element were connected by a copper wire. Subsequently, the composition was molded by a transfer molding method under the conditions of a mold temperature of 175 ° C., an injection pressure of 7.0 MPa, and a curing time of 120 seconds to produce a sealing material. As a result, a DIP 16 pin was manufactured as a semiconductor device. The electrical resistance between the terminals of the semiconductor device was measured while the semiconductor device was placed in a dryer and kept at 250 ° C. for 2000 hours. The time required for the measured value of electrical resistance to reach 1.5 times the initial value was investigated. In addition, when the electrical resistance value did not reach 1.5 times the initial value even after 2000 hours, it was evaluated as “good”.

(7) Reliability evaluation B
A semiconductor element was mounted on a lead frame made of a copper alloy (manufactured by Kobe Steel, product name KFC-H) and partially provided with an Ag plating layer, and the lead frame and the semiconductor element were connected by a copper wire. Subsequently, the composition was molded by a transfer molding method under the conditions of a mold temperature of 175 ° C., an injection pressure of 7.0 MPa, and a curing time of 120 seconds to produce a sealing material. As a result, a DIP 16 pin was manufactured as a semiconductor device. While this semiconductor device was subjected to a biasless high acceleration stress test (UHAST) under conditions of 130 ° C. and 85% RH for 2000 hours, the electrical resistance between the terminals of the semiconductor device was measured, and the measured value of the electrical resistance was the initial value. The time required to reach 1.5 times the time was investigated. In addition, when the electrical resistance value did not reach 1.5 times the initial value even after 2000 hours, it was evaluated as “good”.

DESCRIPTION OF SYMBOLS 1 Semiconductor device 50 Semiconductor element 52 Lead frame 54 Plating layer 56 Wire 62 Sealing material

Claims (19)

An epoxy resin (A) containing an epoxy resin (A1) represented by the following formula (1),
An aromatic compound having a phenol compound (B) containing the phenol compound (B1) represented by the following formula (2) and at least one electron-withdrawing functional group selected from the group consisting of a nitro group, a cyano group and a hydroxyl group Monocarboxylic acid (C)
Containing
Sealing resin composition,
N in Formula (1) is each independently 1 or 2, m is a number within the range of 1-9,
N in Formula (2) is 1 or 2 each independently, and m is a number within the range of 1-9. The sulfur content measured by fluorescent X-ray analysis is 0.1% by mass or less in terms of SO ₃ ,
The resin composition for sealing according to claim 1. Containing an ion trap agent (D),
The sealing resin composition according to claim 1 or 2. The encapsulating resin composition according to claim 3, wherein the ion trapping agent (D) contains a component having at least one of carbonate ion and hydroxide ion. The sealing resin composition according to claim 3, wherein the ion trapping agent (D) contains an aluminum / magnesium compound. The sealing resin composition according to claim 3, wherein the ion trapping agent (D) contains a hydrotalcite compound. Containing a curing accelerator (E),
The sealing resin composition according to any one of claims 1 to 6. Containing an inorganic filler (F),
The sealing resin composition according to any one of claims 1 to 7. Solid at 25 ° C.,
The resin composition for sealing according to any one of claims 1 to 8. The amount of the epoxy resin (A1) relative to the whole epoxy resin (A) is in the range of 80 to 100% by mass,
The amount of the phenol compound (B1) with respect to the whole phenol compound (B) is 49% by mass or less.
The resin composition for sealing according to any one of claims 1 to 9. The amount of the epoxy resin (A1) based on the whole epoxy resin (A) is 79% by mass or less,
The amount of the phenol compound (B1) relative to the whole phenol compound (B) is in the range of 50 to 100% by mass.
The resin composition for sealing according to any one of claims 1 to 9. The epoxy resin (A) and the phenol resin (B) both have no nitro group,
The sealing resin composition according to any one of claims 1 to 11. Used to produce a sealing material in a semiconductor device by pressure molding,
The resin composition for sealing according to any one of claims 1 to 12. The semiconductor device includes a wire for wire bonding,
The wire includes at least one of copper and silver;
The sealing resin composition according to claim 13. The molding pressure when molding the sealing resin composition by a pressure molding method is 3.0 MPa or more, the molding temperature is 120 ° C. or more,
The resin composition for sealing according to claim 13 or 14. A lead frame;
A semiconductor element mounted on the lead frame;
A wire for electrically connecting the semiconductor element and the lead frame;
A sealing material for sealing the semiconductor element,
The semiconductor device which is the hardened | cured material of the resin composition for sealing as described in any one of Claims 1 thru | or 15 with the said sealing material. The semiconductor device according to claim 16, wherein the lead frame includes a plating layer containing at least one component of silver, nickel, and palladium. The semiconductor device according to claim 16 or 17, wherein the wire includes at least one of copper and silver. A method for manufacturing a semiconductor device according to any one of claims 16 to 18, comprising:
The manufacturing method of a semiconductor device including producing the sealing material by shape | molding the resin composition for sealing as described in any one of Claim 1 to 15 with a pressure molding method.