JP2018054748A - Light source device and display device - Google Patents

Light source device and display device Download PDF

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JP2018054748A
JP2018054748A JP2016188527A JP2016188527A JP2018054748A JP 2018054748 A JP2018054748 A JP 2018054748A JP 2016188527 A JP2016188527 A JP 2016188527A JP 2016188527 A JP2016188527 A JP 2016188527A JP 2018054748 A JP2018054748 A JP 2018054748A
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dispersion medium
light source
source device
light
quantum dot
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JP6846756B2 (en
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佐藤 治
Osamu Sato
治 佐藤
一貴 渡部
Kazutaka Watabe
一貴 渡部
東 榮 金
Dong Young Kim
東 榮 金
雅利 戸木田
Masatoshi Tokita
雅利 戸木田
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Tokyo Institute of Technology NUC
LG Display Co Ltd
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Tokyo Institute of Technology NUC
LG Display Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133621Illuminating devices providing coloured light
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00Liquid crystal materials
    • C09K19/04Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/38Polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00Liquid crystal materials
    • C09K19/52Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0026Wavelength selective element, sheet or layer, e.g. filter or grating
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073Light emitting diode [LED]
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01791Quantum boxes or quantum dots
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1334Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133628Illuminating devices with cooling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

PROBLEM TO BE SOLVED: To provide a light source device and display device that can suppress deterioration of a quantum dot due to heat.SOLUTION: A light source device 100 according to one embodiment of the present invention comprises a structure body 110 that includes a dispersion medium 113 having an anisotropy in thermal conductivity, and a quantum dot 112 having the dispersion medium dispersed. An axis high in the thermal conductivity of the dispersion medium directs at a direction where thermal resistance of the structure body is the lowest. Since the thermal conductivity when the dispersion medium is oriented is high along a prescribed axis, the axis high in the thermal conductivity of the structure body of the dispersion medium is made to direct in the direction where the thermal resistance is the lowest, which in turn increases an amount of radiation from the structure body.SELECTED DRAWING: Figure 5

Description

本発明は、光源装置および表示装置に関する。   The present invention relates to a light source device and a display device.

近年、色再現性の良い画像を表示することができる液晶表示装置を提供するため、液晶表示素子への入射光の色純度を高める技術の開発が求められている。一例として、量子ドットを用いた技術が開発されている。量子ドットは蛍光体であり、発光ダイオード(LED)等の光源からの励起光が入射されると該励起光の波長よりも長い波長の光を生成する。量子ドットの種類や粒径を変えることによって、量子ドットが生成する光の波長を調整可能である。例えば、励起光としてLEDからの青色光を用い、量子ドットは該青色光が入射された際に半値幅が狭い緑色光および赤色光を生成するように構成される。これにより、量子ドットを用いて、光の三原色に対応する狭い波長領域の光を生成可能な高効率の光源を実現することができる。   In recent years, in order to provide a liquid crystal display device capable of displaying an image with good color reproducibility, development of a technique for increasing the color purity of incident light on the liquid crystal display element has been demanded. As an example, a technique using quantum dots has been developed. A quantum dot is a fluorescent substance, and when excitation light from a light source such as a light emitting diode (LED) is incident, it generates light having a wavelength longer than the wavelength of the excitation light. The wavelength of light generated by the quantum dots can be adjusted by changing the type and particle size of the quantum dots. For example, blue light from an LED is used as excitation light, and the quantum dots are configured to generate green light and red light having a narrow half-value width when the blue light is incident. Thereby, the highly efficient light source which can produce | generate the light of the narrow wavelength range corresponding to the three primary colors of light using a quantum dot is realizable.

量子ドットは水、酸素や熱に曝されると劣化しやすい。特許文献1に記載の技術は、水および酸素に対してバリア性を有する容器内に、樹脂または有機溶媒中に分散された量子ドットを密閉する。このような構成により、量子ドットを含む光源装置の劣化を抑制して信頼性を向上させることができる。   Quantum dots are susceptible to degradation when exposed to water, oxygen and heat. The technique described in Patent Document 1 seals quantum dots dispersed in a resin or an organic solvent in a container having a barrier property against water and oxygen. With such a configuration, it is possible to improve the reliability by suppressing the deterioration of the light source device including the quantum dots.

特開2016−76634号公報JP, 2006-76634, A 特開2015−233057号公報Japanese Unexamined Patent Publication No. 2015-233057

量子ドットを密閉する容器は、量子ドット自体の無放射失活等により発生した熱を蓄積しやすい。そのため、容器に蓄積された熱に起因する量子ドットの劣化が起こり得る。しかしながら、特許文献1に記載の技術は水および酸素による劣化を抑制することができるものの、熱による劣化について考慮していない。   The container that seals the quantum dots easily accumulates heat generated by non-radiative deactivation of the quantum dots themselves. For this reason, the quantum dots may be deteriorated due to the heat accumulated in the container. However, although the technique described in Patent Document 1 can suppress deterioration due to water and oxygen, it does not consider deterioration due to heat.

本発明は、上述の問題に鑑みて行われたものであって、熱による量子ドットの劣化を抑制することができる光源装置および表示装置を提供することを目的とする。   The present invention has been made in view of the above problems, and an object thereof is to provide a light source device and a display device that can suppress deterioration of quantum dots due to heat.

本発明の一態様は、光源装置であって、熱伝導性に異方性のある分散媒および前記分散媒に分散されている量子ドットを含む構造体を備え、前記分散媒の熱伝導性の高い軸が、前記構造体の熱抵抗が最も低い方向に向いていることを特徴とする。   One embodiment of the present invention is a light source device including a dispersion medium having anisotropic thermal conductivity and a structure including quantum dots dispersed in the dispersion medium, and the thermal conductivity of the dispersion medium. The high axis is directed to the direction in which the thermal resistance of the structure is lowest.

本発明によれば、量子ドットを含む構造体の熱抵抗が最も低い方向に向くように分散媒の熱伝導性の高い軸を適切に設定するため、量子ドットを含む構造体からの放熱量を増加させ、熱による量子ドットの劣化を抑制することができる。   According to the present invention, in order to appropriately set the axis with high thermal conductivity of the dispersion medium so that the thermal resistance of the structure including the quantum dots is directed to the lowest direction, the amount of heat released from the structure including the quantum dots is reduced. It is possible to suppress the deterioration of the quantum dots due to heat.

第1の実施形態に係る表示装置の前面図である。It is a front view of the display apparatus which concerns on 1st Embodiment. 第1の実施形態に係る表示装置の断面図である。It is sectional drawing of the display apparatus which concerns on 1st Embodiment. 第1の実施形態に係る量子ドット構造体の断面図である。It is sectional drawing of the quantum dot structure which concerns on 1st Embodiment. 第1の実施形態に係る分散媒の配向を示す模式図である。It is a schematic diagram which shows the orientation of the dispersion medium which concerns on 1st Embodiment. 第1の実施形態に係る分散媒の配向と量子ドット構造体の構造との関係を示す模式図である。It is a schematic diagram which shows the relationship between the orientation of the dispersion medium which concerns on 1st Embodiment, and the structure of a quantum dot structure. 第2の実施形態に係る表示装置の前面図である。It is a front view of the display apparatus which concerns on 2nd Embodiment. 第2の実施形態に係る光源装置の模式図である。It is a schematic diagram of the light source device which concerns on 2nd Embodiment.

以下、図面を参照して本発明の実施の形態を説明するが、本発明は各実施形態に限定されるものではない。なお、以下で説明する図面で、同機能を有するものは同一符号を付け、その繰り返しの説明は省略することもある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the embodiments. In the drawings described below, components having the same function are denoted by the same reference numerals, and repeated description thereof may be omitted.

(第1の実施形態)
図1は、本実施形態に係る表示装置10の前面図である。表示装置10は、液晶パネル20と、液晶パネルの背面に沿って設けられた光源装置100と、液晶パネル20および光源装置100を支持する枠30とを備える。図1において、視認性のために液晶パネル20は背面側の光源装置100を透過するように示されている。図1に示す表示装置10に含まれる各部の数および大きさは実際の構成を反映しておらず、実際の実装方法に応じて任意に設計されてよい。
(First embodiment)
FIG. 1 is a front view of a display device 10 according to the present embodiment. The display device 10 includes a liquid crystal panel 20, a light source device 100 provided along the back surface of the liquid crystal panel, and a frame 30 that supports the liquid crystal panel 20 and the light source device 100. In FIG. 1, the liquid crystal panel 20 is shown to pass through the light source device 100 on the back side for visibility. The number and size of each part included in the display device 10 shown in FIG. 1 does not reflect the actual configuration, and may be arbitrarily designed according to the actual mounting method.

光源装置100は直下型バックライトユニットであり、液晶パネル20の背面側から液晶パネル20に光を照射する。光源装置100の詳細な構成については、図2および3を用いて後述する。液晶パネル20は、液晶層、偏光板、カラーフィルタ、および薄膜トランジスタ(TFT)等の電気回路を含む周知の構成を有する。液晶パネル20は、電気回路を通じて画素ごとに光源装置100からの光の透過率を制御することによって、所望の画像を表示する。枠30は樹脂、金属等を用いて構成されており、液晶パネル20および光源装置100を支持する。枠30の内部には、液晶パネル20および光源装置100への電気配線が配設される。なお、本実施形態ではバックライトユニットの方式として直下型バックライトユニットを例示しているが、エッジライト方式であってもよい。   The light source device 100 is a direct type backlight unit, and irradiates the liquid crystal panel 20 with light from the back side of the liquid crystal panel 20. A detailed configuration of the light source device 100 will be described later with reference to FIGS. The liquid crystal panel 20 has a known configuration including an electric circuit such as a liquid crystal layer, a polarizing plate, a color filter, and a thin film transistor (TFT). The liquid crystal panel 20 displays a desired image by controlling the transmittance of light from the light source device 100 for each pixel through an electric circuit. The frame 30 is configured using resin, metal, or the like, and supports the liquid crystal panel 20 and the light source device 100. Inside the frame 30, electrical wiring to the liquid crystal panel 20 and the light source device 100 is disposed. In the present embodiment, a direct type backlight unit is illustrated as a backlight unit system, but an edge light system may be used.

図2は、図1のA−A線から見た表示装置10の断面図である。光源装置100は、所定の波長の光を生成する光源部120、および光源部120からの光の波長を変換する量子ドット構造体110を備える。   FIG. 2 is a cross-sectional view of the display device 10 as viewed from line AA in FIG. The light source device 100 includes a light source unit 120 that generates light of a predetermined wavelength, and a quantum dot structure 110 that converts the wavelength of light from the light source unit 120.

光源部120は、発光素子121、基板122、およびフレーム123を有する。発光素子121は、所定の波長の光を生成し、液晶パネル20へ向けて照射する。発光素子121は不図示の電気配線に電気的に接続されており、該電気配線を通じて印加される電力を用いて光を生成する。発光素子121により生成される光の波長は、例えば青色光の波長領域(約380nm〜500nm)または紫外光の波長領域(約10nm〜380nm)である。発光素子121として、発光ダイオード(LED)、有機発光ダイオード(OLED)等の任意の発光素子を用いてよい。発光素子121からの光が励起光として後述の量子ドット構造体110に入射することによって、光源装置100は光の三原色に対応する狭い波長領域の光を生成することができる。   The light source unit 120 includes a light emitting element 121, a substrate 122, and a frame 123. The light emitting element 121 generates light having a predetermined wavelength and irradiates the light toward the liquid crystal panel 20. The light emitting element 121 is electrically connected to an electric wiring (not shown), and generates light using electric power applied through the electric wiring. The wavelength of light generated by the light emitting element 121 is, for example, a blue light wavelength region (about 380 nm to 500 nm) or an ultraviolet light wavelength region (about 10 nm to 380 nm). As the light emitting element 121, any light emitting element such as a light emitting diode (LED) or an organic light emitting diode (OLED) may be used. The light from the light-emitting element 121 enters the quantum dot structure 110 described later as excitation light, so that the light source device 100 can generate light in a narrow wavelength region corresponding to the three primary colors of light.

フレーム123は、凹状の形状を有しており、該形状の底面に発光素子121を支持する。フレーム123の形状はこれに限られず、任意の形状でよい。フレーム123は、樹脂、金属、半導体等の任意の材料を用いて構成されてよい。フレーム123は省略されてよく、その場合には発光素子121は基板122の上に直接支持されてよい。   The frame 123 has a concave shape, and the light emitting element 121 is supported on the bottom surface of the shape. The shape of the frame 123 is not limited to this, and may be any shape. The frame 123 may be configured using any material such as resin, metal, and semiconductor. The frame 123 may be omitted, and in that case, the light emitting element 121 may be directly supported on the substrate 122.

基板122は、液晶パネル20の表面に対して平行に延在し、複数の発光素子121およびフレーム123を支持する。本実施形態では、所定の数の発光素子121およびフレーム123が基板122の上に格子状かつ等間隔に配置される。発光素子121およびフレーム123の数および配置は、表示装置10の構成に応じて任意に設定されてよい。基板122は、樹脂、金属、半導体等の任意の材料を用いて構成されてよい。   The substrate 122 extends in parallel with the surface of the liquid crystal panel 20 and supports the plurality of light emitting elements 121 and the frame 123. In the present embodiment, a predetermined number of light emitting elements 121 and frames 123 are arranged on the substrate 122 in a grid pattern and at equal intervals. The number and arrangement of the light emitting elements 121 and the frames 123 may be arbitrarily set according to the configuration of the display device 10. The substrate 122 may be configured using any material such as resin, metal, and semiconductor.

量子ドット構造体110は液晶パネル20の背面と光源部120との間に位置し、光源部120から液晶パネル20の背面へ照射される光の光路に介在する。すなわち、光源部120からの光は、量子ドット構造体110を介して液晶パネル20の背面に照射される。   The quantum dot structure 110 is located between the back surface of the liquid crystal panel 20 and the light source unit 120, and is interposed in the optical path of light emitted from the light source unit 120 to the back surface of the liquid crystal panel 20. That is, the light from the light source unit 120 is applied to the back surface of the liquid crystal panel 20 through the quantum dot structure 110.

図3は、図1のA−A線から見た量子ドット構造体110の詳細な断面図である。量子ドット構造体110は、密閉容器111、ならびに密閉容器111の中に封入された量子ドット112および分散媒113を含む。   FIG. 3 is a detailed cross-sectional view of the quantum dot structure 110 viewed from the line AA in FIG. The quantum dot structure 110 includes a sealed container 111, and quantum dots 112 and a dispersion medium 113 sealed in the sealed container 111.

密閉容器111は、外部空間(すなわち大気)から隔離された内部空間を有する容器であり、少なくとも可視光の波長領域(約380nm〜780nm)の光を透過するガラスや樹脂等の任意の材料を用いて構成される。水および酸素による量子ドット112の劣化を抑制するために、密閉容器111は水および酸素に対してバリア性を有する材料を用いて構成されることが望ましい。   The sealed container 111 is a container having an internal space isolated from the external space (that is, the atmosphere), and uses any material such as glass or resin that transmits at least light in the visible light wavelength region (about 380 nm to 780 nm). Configured. In order to suppress the deterioration of the quantum dots 112 due to water and oxygen, it is desirable that the sealed container 111 is configured using a material having a barrier property against water and oxygen.

本実施形態において、密閉容器111は水および酸素に対するバリア性が高いガラスを用いて形成されたガラスセルとして構成される。具体的には、密閉容器111は、互いに平行な2つのガラス製の矩形板がガラス製の側壁を介して所定の間隔をおいて対向した四角柱状の構造を有する。光源部120からの光は、該2つのガラス製の矩形板に対して垂直に入射する。密閉容器111の構造は、ここに示したものに限られず、公知のものを用いてよい(例えば、特許文献2参照)。密閉容器111の形状は、例えば円柱状等の任意の形状でよい。密閉容器111を構成する壁面の少なくとも一部は平面状でなく、曲面状でもよい。   In the present embodiment, the sealed container 111 is configured as a glass cell formed using glass having a high barrier property against water and oxygen. Specifically, the sealed container 111 has a rectangular columnar structure in which two glass rectangular plates parallel to each other are opposed to each other with a predetermined interval through a glass side wall. Light from the light source unit 120 enters the two glass rectangular plates perpendicularly. The structure of the sealed container 111 is not limited to that shown here, and a known one may be used (see, for example, Patent Document 2). The shape of the sealed container 111 may be an arbitrary shape such as a cylindrical shape. At least a part of the wall surface constituting the sealed container 111 may be a curved surface instead of a flat surface.

量子ドット112(コロイド状量子ドットともいう)は、量子力学に従う光学特性を有するナノスケールの材料であり、粒子径が約1nm〜100nm、好ましくは1nm〜50nm、より好ましくは1nm〜20nmの微小な半導体粒子である。量子ドット112は、バンドギャップ(価電子帯および伝導帯のエネルギー差)よりも大きなエネルギーを有する光子を吸収し、その粒子径に応じた波長の光を放出する。したがって、量子ドット112は、所定の波長以下の光を吸収する性質を持ち、粒子径を調整することによって所望の波長の光を発生させることができる。本実施形態において、量子ドット112は図3のように球状であるが、これに限られず任意の形状であってよい。   The quantum dot 112 (also referred to as colloidal quantum dot) is a nanoscale material having optical properties according to quantum mechanics, and has a particle size of about 1 nm to 100 nm, preferably 1 nm to 50 nm, more preferably 1 nm to 20 nm. Semiconductor particles. The quantum dot 112 absorbs a photon having energy larger than the band gap (energy difference between the valence band and the conduction band) and emits light having a wavelength corresponding to the particle diameter. Therefore, the quantum dot 112 has a property of absorbing light having a predetermined wavelength or less, and can generate light having a desired wavelength by adjusting the particle diameter. In the present embodiment, the quantum dots 112 are spherical as shown in FIG. 3, but are not limited to this and may have any shape.

量子ドット112は、少なくとも1つの半導体材料を含む。量子ドット112の半導体材料として、第IV族元素、第II−VI族化合物、第II−V族化合物、第III−VI族化合物、第III−V族化合物、第IV−VI族化合物、第I−III−VI族化合物、第II−IV−VI族化合物、第II−IV−V族化合物等を用いてよい。具体的には、量子ドット112の半導体材料として、ZnO、ZnS、ZnSe、ZnTe、CdO、CdS、CdSe、CdTe、MgS、MgSe、GaAs、GaN、GaP、GaSe、GaSb、HgO、HgS、HgSe、HgTe、InAs、InN、InP、InSb、AlAs、A1N、A1P、AlSb、TiN、TiP、TiAs、TiSb、PbO、PbS、PbSe、PbTe、Ge、Si等を用いることができる。量子ドット112の材料として、ここに示したものに限られず、量子ドットの機能を発揮できる限り任意の材料をもちいてよい。   The quantum dot 112 includes at least one semiconductor material. As semiconductor materials for the quantum dots 112, group IV elements, group II-VI compounds, group II-V compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, group I -III-VI compounds, II-IV-VI compounds, II-IV-V compounds, etc. may be used. Specifically, as the semiconductor material of the quantum dots 112, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgS, MgSe, GaAs, GaN, GaP, GaSe, GaSb, HgO, HgS, HgSe, HgTe InAs, InN, InP, InSb, AlAs, A1N, A1P, AlSb, TiN, TiP, TiAs, TiSb, PbO, PbS, PbSe, PbTe, Ge, Si, and the like can be used. The material of the quantum dot 112 is not limited to the material shown here, and any material may be used as long as the function of the quantum dot can be exhibited.

光源部120が生成する光が青色光である場合には、緑色光の波長領域(約510nm以上610nm以下、好ましくは520nm以上580nm以下)に発光中心波長を有する第1の量子ドット112と、赤色光の波長領域(約600nm以上700nm以下、好ましくは610nm以上680nm以下)に発光中心波長を有する第2の量子ドット112とを組み合わせて用いる。すなわち、光源部120が生成する青色光は、量子ドット112に対する励起光として機能するとともに、光源装置100が発する可視光として機能する。本実施形態においては、青色、緑色、及び赤色の3つの極大がある発光スペクトルを有する光源を示したが、量子ドットの発光中心波長及び量子ドットの組み合わせはこれに限られず任意の組み合わせを用いてよい。   When the light generated by the light source unit 120 is blue light, the first quantum dot 112 having a light emission center wavelength in the wavelength region of green light (about 510 nm to 610 nm, preferably 520 nm to 580 nm), and red A second quantum dot 112 having an emission center wavelength in the wavelength region of light (about 600 nm to 700 nm, preferably 610 nm to 680 nm) is used in combination. That is, the blue light generated by the light source unit 120 functions as excitation light for the quantum dots 112 and also functions as visible light emitted from the light source device 100. In the present embodiment, a light source having an emission spectrum with three maxima of blue, green, and red has been shown, but the combination of the emission center wavelength of quantum dots and quantum dots is not limited to this, and any combination is used. Good.

光源部120が生成する光が紫外光である場合には、緑色光の波長領域に発光中心波長を有する第1の量子ドット112と、赤色光の波長領域に発光中心波長を有する第2の量子ドット112と、青色光の波長領域に発光中心波長を有する第3の量子ドット112とを組み合わせて用いる。すなわち、光源部120が生成する紫外光は、量子ドット112に対する励起光として機能する。   When the light generated by the light source unit 120 is ultraviolet light, the first quantum dots 112 having the emission center wavelength in the wavelength region of green light and the second quantum having the emission center wavelength in the wavelength region of red light. The dot 112 is used in combination with the third quantum dot 112 having the emission center wavelength in the blue light wavelength region. That is, the ultraviolet light generated by the light source unit 120 functions as excitation light for the quantum dots 112.

量子ドット112は、少なくとも1つの半導体材料を含むコアと、少なくとも1つの半導体材料を含むシェルとからなるコアシェル型構造を有していてもよい。具体的には、コアとしてCdSe、シェルとしてCdZnSを有する量子ドット112、コアとしてCdZnSe、シェルとしてCdZnSを有する量子ドット112、コアとしてCdS、シェルとしてCdZnSを有する量子ドット112等を用いることができる。   The quantum dots 112 may have a core-shell type structure including a core including at least one semiconductor material and a shell including at least one semiconductor material. Specifically, quantum dots 112 having CdSe as a core and CdZnS as a shell, CdZnSe as a core, quantum dots 112 having CdZnS as a shell, quantum dots 112 having CdS as a core and CdZnS as a shell, and the like can be used.

本実施形態では量子ドット構造体110の構造と分散媒113の熱伝導性の高い軸との間に以下に説明する関係が設定されているため、量子ドット構造体110の高い放熱性を実現することができる。分散媒113は、熱伝導性に異方性がある液体または固体の媒質であり、量子ドット112を分散する。熱伝導性に異方性があることは、他の方向と比較して特定の方向に熱伝導率が高いことを意味する。また、量子ドット構造体110の形状は通常は球体でないため、熱抵抗に異方性がある。熱抵抗に異方性があることは、量子ドット構造体110において方向ごとの熱抵抗が一定ではなく、他の方向と比較して特定の方向に沿って熱抵抗が低いことを意味する。   In the present embodiment, since the relationship described below is set between the structure of the quantum dot structure 110 and the axis having high thermal conductivity of the dispersion medium 113, high heat dissipation of the quantum dot structure 110 is realized. be able to. The dispersion medium 113 is a liquid or solid medium having anisotropy in thermal conductivity, and disperses the quantum dots 112. Anisotropy in thermal conductivity means that the thermal conductivity is higher in a specific direction than in other directions. Further, since the shape of the quantum dot structure 110 is usually not a sphere, the thermal resistance is anisotropic. The anisotropy of the thermal resistance means that the thermal resistance in each direction is not constant in the quantum dot structure 110, and the thermal resistance is low along a specific direction as compared with other directions.

本実施形態に係る光源装置100は、量子ドット構造体110の方向ごとの熱抵抗に基づいて分散媒113の熱伝導性の高い軸を適切に設定することによって、量子ドット構造体110からの放熱量を増加させ、熱による量子ドット112の劣化を抑制する。   The light source device 100 according to the present embodiment appropriately sets the axis with high thermal conductivity of the dispersion medium 113 based on the thermal resistance in each direction of the quantum dot structure 110, thereby releasing the light from the quantum dot structure 110. The amount of heat is increased, and deterioration of the quantum dots 112 due to heat is suppressed.

具体的には、分散媒113として液晶性高分子(液晶高分子、高分子液晶ともいう)を用いる。液晶性高分子は、主鎖および側鎖の少なくとも一方に液晶構造(すなわちメソゲン基)を含む高分子化合物である。主鎖に液晶構造を含むものを主鎖型の液晶性高分子といい、側鎖に液晶構造を含むものを側鎖型の液晶性高分子という。メソゲン基は棒状または板状の剛直な構造を有しているため、高分子化合物に液晶性を付与する。メソゲン基として、ビフェニル基、フェニルベンゾエート基等の周知の構造を用いてよい。本実施形態では分散媒113として液晶性高分子のみを用いているが、液晶性高分子に希釈モノマー、有機溶媒等の任意の添加剤を加えたものを用いてよい。また、液晶性高分子は重合性基を有していてもよく、重合性基を有する液晶性分子を重合することにより得られる液晶性高分子であっても良い。   Specifically, a liquid crystalline polymer (also referred to as a liquid crystal polymer or a polymer liquid crystal) is used as the dispersion medium 113. The liquid crystalline polymer is a polymer compound containing a liquid crystal structure (that is, a mesogenic group) in at least one of a main chain and a side chain. Those having a liquid crystal structure in the main chain are called main chain type liquid crystalline polymers, and those having a side chain having a liquid crystal structure are called side chain type liquid crystalline polymers. Since the mesogenic group has a rod-like or plate-like rigid structure, it imparts liquid crystal properties to the polymer compound. As the mesogenic group, a known structure such as a biphenyl group or a phenylbenzoate group may be used. In this embodiment, only the liquid crystalline polymer is used as the dispersion medium 113, but a liquid crystal polymer added with an optional additive such as a dilution monomer or an organic solvent may be used. Further, the liquid crystalline polymer may have a polymerizable group, or may be a liquid crystalline polymer obtained by polymerizing a liquid crystalline molecule having a polymerizable group.

図4は、本実施形態に係る分散媒113の配向を示す模式図である。図4において分散媒113のうち液晶構造のみが示されており、液晶構造以外の部分は省略されている。分散媒113の配向は、液晶性高分子である分散媒113に含まれる液晶構造(メソゲン基)の長軸の平均的な向きである。図4には分散媒113の配向の方向Bが矢印で示されている。   FIG. 4 is a schematic diagram showing the orientation of the dispersion medium 113 according to the present embodiment. In FIG. 4, only the liquid crystal structure is shown in the dispersion medium 113, and portions other than the liquid crystal structure are omitted. The orientation of the dispersion medium 113 is the average orientation of the major axis of the liquid crystal structure (mesogen group) contained in the dispersion medium 113 which is a liquid crystalline polymer. In FIG. 4, the direction B of orientation of the dispersion medium 113 is indicated by an arrow.

本実施形態では所定の方向B(所定の軸)に沿って分散媒113が配向しているため、分散媒113の各液晶構造が整列しており、分散媒113の液晶構造の間に量子ドット112が分散されている。量子ドット構造体110の製造工程では、任意の方法によって分散媒113の液晶構造を整列させ、分散媒113の配向を設定する。例えば、分散媒113に磁場、電場、延伸力やずり応力等の外力を加えること、あるいは密閉容器111の内壁に配向膜を設けることによって、分散媒113を配向させてよい。また、液晶構造にイオン基等の自発的配向を促進する所定の構造を導入することによって、分散媒113を自発的に配向させてよい。   In this embodiment, since the dispersion medium 113 is oriented along a predetermined direction B (predetermined axis), the liquid crystal structures of the dispersion medium 113 are aligned, and quantum dots are arranged between the liquid crystal structures of the dispersion medium 113. 112 is distributed. In the manufacturing process of the quantum dot structure 110, the liquid crystal structure of the dispersion medium 113 is aligned by an arbitrary method, and the orientation of the dispersion medium 113 is set. For example, the dispersion medium 113 may be oriented by applying an external force such as a magnetic field, electric field, stretching force or shear stress to the dispersion medium 113 or by providing an orientation film on the inner wall of the sealed container 111. Further, the dispersion medium 113 may be spontaneously aligned by introducing a predetermined structure that promotes spontaneous alignment such as an ionic group into the liquid crystal structure.

分散媒113の液晶構造が所定の方向Bに沿って配向している場合には、分散媒113中でフォノンの散乱が低減される。一般的にフォノンの散乱が小さいほど熱伝導率が高い。そのため分散媒113の1つの方向に沿った熱伝導率は、該方向が配向の方向Bに近いほど、すなわち該方向と配向の方向Bとのなす角度が小さいほど高い。換言すると、分散媒113の配向の方向B(所定の軸)に沿った熱伝導率は、方向B以外の方向と比較して最も高い。   When the liquid crystal structure of the dispersion medium 113 is aligned along the predetermined direction B, phonon scattering is reduced in the dispersion medium 113. In general, the smaller the phonon scattering, the higher the thermal conductivity. Therefore, the thermal conductivity along one direction of the dispersion medium 113 is higher as the direction is closer to the orientation direction B, that is, the smaller the angle formed between the direction and the orientation direction B is. In other words, the thermal conductivity along the direction B (predetermined axis) of the orientation of the dispersion medium 113 is the highest compared to directions other than the direction B.

分散媒113の液晶構造としてネマチック相のものおよびスメクチック相のもののどちらを用いてもよいが、スメクチック相は熱伝導率がネマチック相よりも高いためより好ましい。   Although either a nematic phase or a smectic phase may be used as the liquid crystal structure of the dispersion medium 113, the smectic phase is more preferable because it has a higher thermal conductivity than the nematic phase.

図5(a)、5(b)は、本実施形態に係る分散媒113の配向と量子ドット構造体110の構造との関係を示す模式図である。図5(a)および図5(b)では、量子ドット構造体110の構造が異なる。   FIGS. 5A and 5B are schematic views showing the relationship between the orientation of the dispersion medium 113 and the structure of the quantum dot structure 110 according to the present embodiment. 5A and 5B, the structure of the quantum dot structure 110 is different.

上述のように、量子ドット構造体110の密閉容器111の形状は四角柱状である。図5(a)に示すように、密閉容器111において、所定の方向C(ここでは光源部120からの光の入射方向)に沿った高さhは、方向Cに垂直な方向に沿った幅wよりも小さい。この場合に、量子ドット構造体110の方向C(すなわち厚さが最も小さい方向)に沿った熱抵抗は、方向C以外の方向と比較して最も小さい。換言すると、量子ドット構造体110は、厚さが最も小さい方向Cに沿って放熱しやすい。図5(a)の形態では、分散媒113の配向の方向B(すなわち熱伝導性の高い軸)が、量子ドット構造体110の厚さが最も小さい方向Cに近いように分散媒113の配向を設定することによって、量子ドット構造体110からの放熱量を増加させる。   As described above, the shape of the sealed container 111 of the quantum dot structure 110 is a quadrangular prism shape. As shown in FIG. 5A, in the sealed container 111, the height h along a predetermined direction C (here, the incident direction of light from the light source unit 120) is a width along a direction perpendicular to the direction C. smaller than w. In this case, the thermal resistance along the direction C (that is, the direction in which the thickness is the smallest) of the quantum dot structure 110 is the smallest compared to the directions other than the direction C. In other words, the quantum dot structure 110 easily radiates heat along the direction C where the thickness is the smallest. In the form of FIG. 5A, the orientation of the dispersion medium 113 is such that the orientation direction B of the dispersion medium 113 (that is, the axis having high thermal conductivity) is close to the direction C where the thickness of the quantum dot structure 110 is the smallest. Is set, the amount of heat released from the quantum dot structure 110 is increased.

図5(b)の形態では、密閉容器111の側壁の少なくとも一部に放熱部材であるヒートシンク114が設けられている。このような構成においては、図5(a)の形態のような厚みに関わらず、ヒートシンク114が設けられている側壁へ向かう方向Dに沿った熱抵抗は、方向D以外の方向と比較して最も小さい。換言すると、量子ドット構造体110は、ヒートシンク114に向かう方向Dに沿って放熱しやすい。図5(b)の形態では、分散媒113の配向の方向B(すなわち熱伝導性の高い軸)が、量子ドット構造体110のヒートシンク114に向かう方向Dに近いように分散媒113の配向を設定することによって、量子ドット構造体110からの放熱量を増加させる。   In the form shown in FIG. 5B, a heat sink 114 as a heat radiating member is provided on at least a part of the side wall of the sealed container 111. In such a configuration, the thermal resistance along the direction D toward the side wall on which the heat sink 114 is provided is smaller than that in the direction other than the direction D, regardless of the thickness as shown in FIG. Smallest. In other words, the quantum dot structure 110 easily radiates heat along the direction D toward the heat sink 114. 5B, the orientation of the dispersion medium 113 is set so that the orientation direction B of the dispersion medium 113 (that is, the axis having high thermal conductivity) is close to the direction D toward the heat sink 114 of the quantum dot structure 110. By setting, the amount of heat released from the quantum dot structure 110 is increased.

量子ドット構造体110の方向ごとの熱抵抗は、量子ドット構造体110の材質および形状や放熱部材の有無によって決まる。一般的に量子ドット構造体110の方向ごとの熱抵抗は一定ではなく、特定の方向に沿って熱抵抗が最も低い。量子ドット構造体110の形状が複雑であり、方向ごとの熱抵抗に複数の極小値が存在する場合(すなわち、隣接する他の方向よりも熱抵抗が低い方向が複数存在する場合)には、各極小値を熱抵抗が最も低い方向とみなす。本実施形態に係る量子ドット構造体110では、分散媒113の熱伝導性の高い軸と量子ドット構造体110の熱抵抗が最も低い方向とが近いように、換言すると分散媒113の熱伝導性の高い軸が量子ドット構造体110の熱抵抗が最も低い方向に向いているように、分散媒113の配向が設定されている。具体的には、分散媒113の熱伝導性の高い軸と量子ドット構造体110の熱抵抗が最も低い方向とのなす角度が0度以上45度未満に設定されていることが望ましい。このような構成によって、量子ドット構造体110からの放熱量を増加させる効果が得られる。   The thermal resistance in each direction of the quantum dot structure 110 is determined by the material and shape of the quantum dot structure 110 and the presence or absence of a heat dissipation member. Generally, the thermal resistance in each direction of the quantum dot structure 110 is not constant, and the thermal resistance is lowest along a specific direction. When the shape of the quantum dot structure 110 is complicated and there are a plurality of minimum values in the thermal resistance for each direction (that is, when there are a plurality of directions having lower thermal resistance than other adjacent directions), Each local minimum value is regarded as the direction with the lowest thermal resistance. In the quantum dot structure 110 according to the present embodiment, the axis of high thermal conductivity of the dispersion medium 113 is close to the direction in which the thermal resistance of the quantum dot structure 110 is the lowest, in other words, the thermal conductivity of the dispersion medium 113. The orientation of the dispersion medium 113 is set so that the higher axis is oriented in the direction in which the thermal resistance of the quantum dot structure 110 is lowest. Specifically, it is desirable that the angle formed between the axis with high thermal conductivity of the dispersion medium 113 and the direction with the lowest thermal resistance of the quantum dot structure 110 is set to 0 degree or more and less than 45 degrees. With such a configuration, an effect of increasing the heat radiation amount from the quantum dot structure 110 can be obtained.

熱伝導性に異方性がある分散媒113として液晶性高分子を用いることは、配向の調整が容易であり、放熱の効率を向上させやすいため好ましい。本実施形態では、液晶性高分子である分散媒113の配向を設定するために磁場を用いる。具体的には、液晶性高分子である分散媒113が高温の状態で量子ドット112を添加して混合し、分散媒113の配向を目的の方向に設定するように磁場を印加する。その後、磁場を印加した状態で分散媒113を冷却し、磁場の印加を終了する。これにより、分散媒113の配向を所定の方向に維持することができる。   It is preferable to use a liquid crystalline polymer as the dispersion medium 113 having anisotropy in thermal conductivity because the alignment can be easily adjusted and the efficiency of heat dissipation can be easily improved. In the present embodiment, a magnetic field is used to set the orientation of the dispersion medium 113 that is a liquid crystalline polymer. Specifically, the quantum dots 112 are added and mixed while the dispersion medium 113 that is a liquid crystalline polymer is at a high temperature, and a magnetic field is applied so as to set the orientation of the dispersion medium 113 in a target direction. Thereafter, the dispersion medium 113 is cooled in a state where a magnetic field is applied, and the application of the magnetic field is terminated. Thereby, the orientation of the dispersion medium 113 can be maintained in a predetermined direction.

分散媒113の配向を設定するために、磁場の他に、分散媒113の配向を目的の方向に設定するように電場や延伸力およびずり応力等の外力を加えてよい。また、密閉容器111の内壁に分散媒113の配向を目的の方向に設定するための配向膜を設けてよい。また、分散媒113の液晶構造にイオン基等の自発的配向を促進する所定の構造を導入し、分散媒113の配向が目的の方向になるように自発的配向を行わせてよい。その他任意の方法によって、液晶性高分子である分散媒113の配向を設定してよい。   In order to set the orientation of the dispersion medium 113, in addition to the magnetic field, an external force such as an electric field, stretching force, and shear stress may be applied so as to set the orientation of the dispersion medium 113 in a target direction. In addition, an alignment film for setting the orientation of the dispersion medium 113 in a target direction may be provided on the inner wall of the sealed container 111. In addition, a predetermined structure that promotes spontaneous alignment such as ionic groups may be introduced into the liquid crystal structure of the dispersion medium 113 so that the alignment of the dispersion medium 113 is performed in a desired direction. The orientation of the dispersion medium 113 that is a liquid crystalline polymer may be set by any other method.

熱伝導性に異方性がある分散媒113として、液晶性高分子の他に、熱伝導性の高い方向を調整可能な任意の物質を用いてよい。熱伝導性に異方性がある分散媒113として、長軸および短軸の長さが異なる形状を有する物質を用いることができる。例えば、棒状または針状の形状に成形された、樹脂等の有機化合物またはガラス等の無機化合物である。長軸および短軸の長さが異なる形状を有する物質を用いることによって、液晶性高分子のように熱伝導率が高い方向を調整することができる。このような物質の配向の設定のために、上述のように磁場、電場、延伸力等の外力を用いてよい。   As the dispersion medium 113 having anisotropic thermal conductivity, in addition to the liquid crystalline polymer, any substance capable of adjusting the direction of high thermal conductivity may be used. As the dispersion medium 113 having anisotropy in thermal conductivity, substances having shapes with different major and minor axes can be used. For example, an organic compound such as a resin or an inorganic compound such as glass, which is molded into a rod-like or needle-like shape. By using a substance having a shape in which the major axis and the minor axis are different, the direction in which the thermal conductivity is high like the liquid crystalline polymer can be adjusted. In order to set the orientation of such a substance, an external force such as a magnetic field, an electric field, or a stretching force may be used as described above.

特に上述のような密閉容器111に量子ドット112が密閉された構成では放熱性が悪く、量子ドット112が熱により劣化する問題が起きやすいため、本実施形態の効果を顕著に得ることができる。しかしながら、量子ドット構造体110は上述の具体的な構成に限られず、密閉容器111が省略されたフィルム状の構成であってもよい。   In particular, in the configuration in which the quantum dots 112 are sealed in the sealed container 111 as described above, the heat dissipation is poor, and the problem that the quantum dots 112 deteriorate due to heat is likely to occur. Therefore, the effect of this embodiment can be significantly obtained. However, the quantum dot structure 110 is not limited to the specific configuration described above, and may be a film-like configuration in which the sealed container 111 is omitted.

本実施形態では、分散媒113の熱伝導性の高い軸と量子ドット構造体110の熱抵抗が最も低い方向とが近いように、量子ドット112を分散する分散媒113の配向が設定されている。このような構成により、量子ドット構造体110からの放熱量を増加させ、量子ドット112の無放射失活等により発生した熱が量子ドット構造体110に蓄積することを抑制する。その結果、量子ドット112の熱による劣化を抑制し、光源装置100の信頼性を向上させることができる。   In the present embodiment, the orientation of the dispersion medium 113 that disperses the quantum dots 112 is set so that the axis with high thermal conductivity of the dispersion medium 113 is close to the direction in which the thermal resistance of the quantum dot structure 110 is the lowest. . With such a configuration, the amount of heat released from the quantum dot structure 110 is increased, and heat generated due to non-radiative deactivation of the quantum dots 112 is prevented from accumulating in the quantum dot structure 110. As a result, deterioration of the quantum dots 112 due to heat can be suppressed, and the reliability of the light source device 100 can be improved.

(実施例)
実施例として以下の式(1)に示す構造の液晶性高分子である分散媒113を含み配向処理を施した量子ドット構造体110に対して加速試験を行った。また、比較例として同様の分散媒113を用いて配向処理を施していない量子ドット構造体110に対して加速試験を行った。式(1)に示す構造の液晶性高分子の数平均分子量は26000g/mol、分子量分布の多分散度は1.53であった。この液晶性高分子について、無配向の場合と、配向処理後の配向方向の熱伝導度を測定した結果を、表1に示す。
(Example)
As an example, an acceleration test was performed on a quantum dot structure 110 including a dispersion medium 113 that is a liquid crystalline polymer having a structure represented by the following formula (1) and subjected to an alignment treatment. Further, as a comparative example, an acceleration test was performed on the quantum dot structure 110 that was not subjected to the alignment treatment using the same dispersion medium 113. The number average molecular weight of the liquid crystalline polymer having the structure represented by the formula (1) was 26000 g / mol, and the polydispersity of the molecular weight distribution was 1.53. Table 1 shows the results of measuring the thermal conductivity in the alignment direction after the alignment treatment for this liquid crystalline polymer.

量子ドット構造体110の作製は次のようにして行った。先ず、量子ドット112と分散媒113の混合物を量子ドット構造体110の密閉容器111に充填した。続けて、量子ドット構造体110を液晶性高分子の液晶−液体転移温度である117℃を上回る温度である、130℃に保持しながら、3.8Tの磁場を密閉容器111の短軸方向(すなわち厚さが最も小さい方向)に沿って印加した。さらに、磁場を印加したまま室温まで1℃/minの条件で降温させることで、実施例として用いる量子ドット構造体110を得た。   The quantum dot structure 110 was manufactured as follows. First, the sealed container 111 of the quantum dot structure 110 was filled with a mixture of the quantum dots 112 and the dispersion medium 113. Subsequently, while maintaining the quantum dot structure 110 at 130 ° C., which is higher than the liquid crystal-liquid transition temperature of the liquid crystalline polymer, 130 ° C., a magnetic field of 3.8 T is applied in the minor axis direction of the sealed container 111 ( That is, it was applied along the direction of the smallest thickness. Furthermore, the quantum dot structure 110 used as an example was obtained by lowering the temperature to room temperature under the condition of 1 ° C./min while applying the magnetic field.

配向の有無は、X線回折装置(Bruker社製、D8 DISCOVER、2次元検出器Vantec500)にて、磁場方向に対して垂直にX線ビームを入射して撮影した2次元回折像から判別した。   The presence / absence of orientation was determined from a two-dimensional diffraction image photographed with an X-ray beam incident perpendicularly to the magnetic field direction with an X-ray diffractometer (manufactured by Bruker, D8 DISCOVER, two-dimensional detector Vantec 500).

加速試験の条件としては、量子ドット構造体110を中心波長450nmのLEDの上に設置し、85度の環境温度においてLEDを点灯した。LED点灯前の状態および70時間経過後の状態についてそれぞれ量子ドット構造体110を通過した光のCIE1931色度図上の座標を測定し、それらの状態の間の色度変化ΔCxおよびΔCyを算出した。色度変化ΔCxは色度図におけるx座標の変化量であり、色度変化ΔCyは色度図におけるy座標の変化量である。測定結果を表1に示す。   As a condition for the acceleration test, the quantum dot structure 110 was placed on an LED having a central wavelength of 450 nm, and the LED was turned on at an environmental temperature of 85 degrees. The coordinates on the CIE1931 chromaticity diagram of the light that passed through the quantum dot structure 110 were measured for the state before the LED was turned on and the state after 70 hours had elapsed, and the chromaticity changes ΔCx and ΔCy between those states were calculated. . The chromaticity change ΔCx is the change amount of the x coordinate in the chromaticity diagram, and the chromaticity change ΔCy is the change amount of the y coordinate in the chromaticity diagram. The measurement results are shown in Table 1.

Figure 2018054748
Figure 2018054748

Figure 2018054748
Figure 2018054748

表1に示すように、配向処理が施された実施例では、配向処理が施されていない比較例よりも垂直方向の熱伝導率が向上している。そして、配向処理が施された実施例では、配向処理が施されていない比較例よりも色度変化ΔCxおよびΔCyの絶対値が小さい。そのため、液晶性高分子である分散媒113に対して配向処理を行うことによって、長時間経過後の色度変化が抑えられ、信頼性が向上することが確認できた。   As shown in Table 1, in the example in which the alignment treatment was performed, the thermal conductivity in the vertical direction was improved as compared with the comparative example in which the alignment treatment was not performed. And in the Example in which the alignment process was performed, the absolute value of chromaticity change (DELTA) Cx and (DELTA) Cy is smaller than the comparative example in which the alignment process is not performed. Therefore, it was confirmed that by performing the alignment treatment on the dispersion medium 113 that is a liquid crystalline polymer, a change in chromaticity after a long time was suppressed and reliability was improved.

(第2の実施形態)
第1の実施形態において光源装置100は直下型バックライトユニットであるが、本実施形態において光源装置200はエッジ型バックライトユニットである。光源装置200の構成以外は、第1の実施形態と同様である。
(Second Embodiment)
In the first embodiment, the light source device 100 is a direct type backlight unit, but in the present embodiment, the light source device 200 is an edge type backlight unit. Except for the configuration of the light source device 200, the configuration is the same as that of the first embodiment.

図6は、本実施形態に係る表示装置11の前面図である。表示装置11は、液晶パネル20と、液晶パネルの端面に沿って設けられた光源装置200と、液晶パネル20および光源装置200を支持する枠30とを備える。図6において、視認性のために枠30は内部の光源装置200を透過するように示されている。光源装置200からの光は、液晶パネル20の背面側に設けられた不図示の導光板を介して液晶パネルに照射される。本実施形態では光源装置200は液晶パネル20の右側端面にのみ設けられているが、液晶パネル20の上側端面、下側端面、左側端面および右側端面のうち1つまたは2つ以上に設けられてよい。   FIG. 6 is a front view of the display device 11 according to the present embodiment. The display device 11 includes a liquid crystal panel 20, a light source device 200 provided along an end surface of the liquid crystal panel, and a frame 30 that supports the liquid crystal panel 20 and the light source device 200. In FIG. 6, the frame 30 is shown to pass through the internal light source device 200 for visibility. The light from the light source device 200 is applied to the liquid crystal panel via a light guide plate (not shown) provided on the back side of the liquid crystal panel 20. In the present embodiment, the light source device 200 is provided only on the right end surface of the liquid crystal panel 20, but is provided on one or more of the upper end surface, the lower end surface, the left end surface, and the right end surface of the liquid crystal panel 20. Good.

図7は、本実施形態に係る光源装置200の模式図である。光源装置200は、所定の波長の光を生成する光源部220、および光源部220からの光の波長を変換する量子ドット構造体210を備える。   FIG. 7 is a schematic diagram of the light source device 200 according to the present embodiment. The light source device 200 includes a light source unit 220 that generates light of a predetermined wavelength, and a quantum dot structure 210 that converts the wavelength of light from the light source unit 220.

光源部220は第1の実施形態と同様の発光素子121および基板122を有するが、フレーム123は省略されている。基板122は、液晶パネル20の端面に対して平行に延在し、複数の発光素子121を支持する。本実施形態では、所定の数の発光素子121が基板122の上に一列で等間隔に配置される。発光素子121の数および配置は、表示装置11の構成に応じて任意に設定されてよい。   The light source unit 220 includes the light emitting element 121 and the substrate 122 similar to those of the first embodiment, but the frame 123 is omitted. The substrate 122 extends parallel to the end face of the liquid crystal panel 20 and supports the plurality of light emitting elements 121. In the present embodiment, a predetermined number of light emitting elements 121 are arranged in a line on the substrate 122 at equal intervals. The number and arrangement of the light emitting elements 121 may be arbitrarily set according to the configuration of the display device 11.

量子ドット構造体210は、密閉容器211、ならびに密閉容器211の中に封入された第1の実施形態と同様の量子ドット112および分散媒113を含む。第1の実施形態に係る密閉容器111は1つの発光素子121に対応して1つ設けられているが、本実施形態に係る密閉容器211は複数の発光素子121に対応して1つ設けられている。   The quantum dot structure 210 includes a sealed container 211, and quantum dots 112 and a dispersion medium 113 similar to those of the first embodiment sealed in the sealed container 211. One sealed container 111 according to the first embodiment is provided corresponding to one light emitting element 121, but one sealed container 211 according to the present embodiment is provided corresponding to a plurality of light emitting elements 121. ing.

密閉容器211の材料は第1の実施形態と同様である。密閉容器211は、液晶パネル20の端面に対して平行に延在する棒状の形状を有する。量子ドット構造体210は液晶パネル20の端面と光源部220との間に位置し、光源部220から液晶パネル20の端面へ照射される光の光路に介在する。すなわち、光源部220に含まれる複数の発光素子121からの光は、量子ドット構造体210を介して液晶パネル20の端面に照射される。   The material of the sealed container 211 is the same as that of the first embodiment. The sealed container 211 has a rod-like shape extending in parallel with the end face of the liquid crystal panel 20. The quantum dot structure 210 is located between the end surface of the liquid crystal panel 20 and the light source unit 220, and is interposed in the optical path of light emitted from the light source unit 220 to the end surface of the liquid crystal panel 20. That is, light from the plurality of light emitting elements 121 included in the light source unit 220 is irradiated to the end surface of the liquid crystal panel 20 through the quantum dot structure 210.

量子ドット構造体210の密閉容器211の形状は棒状であるため、密閉容器211において、所定の方向E(ここでは光源部120からの光の入射方向)に沿った厚さが最も小さい。この場合に、量子ドット構造体210の方向E(すなわち厚さが最も小さい方向)に沿った熱抵抗は、方向E以外の方向と比較して最も小さい。換言すると、量子ドット構造体210は、厚さが最も小さい方向Eに沿って放熱しやすい。そのため本実施形態では、分散媒113の配向の方向Bが、量子ドット構造体210の厚さが最も小さい方向Eに近いように分散媒113の配向を設定することによって、量子ドット構造体210からの放熱量を増加させる。   Since the shape of the sealed container 211 of the quantum dot structure 210 is a rod, the thickness of the sealed container 211 along the predetermined direction E (here, the incident direction of light from the light source unit 120) is the smallest. In this case, the thermal resistance along the direction E (that is, the direction in which the thickness is the smallest) of the quantum dot structure 210 is the smallest compared to the directions other than the direction E. In other words, the quantum dot structure 210 is likely to dissipate heat along the direction E where the thickness is the smallest. Therefore, in this embodiment, by setting the orientation of the dispersion medium 113 so that the orientation direction B of the dispersion medium 113 is close to the direction E in which the thickness of the quantum dot structure 210 is the smallest, Increase heat dissipation.

本実施形態に係る表示装置11においても、第1の実施形態と同様に分散媒113の配向を適切に設定することによって、量子ドット構造体210からの放熱量を増加させ、熱による量子ドット112の劣化を抑制することができる。   Also in the display device 11 according to the present embodiment, by appropriately setting the orientation of the dispersion medium 113 as in the first embodiment, the amount of heat released from the quantum dot structure 210 is increased, and the quantum dots 112 due to heat are used. Can be prevented.

本発明は、上述の実施形態に限定されることなく、本発明の趣旨を逸脱しない範囲において適宜変更可能である。   The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit of the present invention.

100 表示装置
110 量子ドット構造体
112 量子ドット
113 分散媒
DESCRIPTION OF SYMBOLS 100 Display apparatus 110 Quantum dot structure 112 Quantum dot 113 Dispersion medium

Claims (12)

熱伝導性に異方性のある分散媒および前記分散媒に分散されている量子ドットを含む構造体を備え、
前記分散媒の熱伝導性の高い軸が、前記構造体の熱抵抗が最も低い方向に向いていることを特徴とする光源装置。
A structure including a dispersion medium having anisotropic thermal conductivity and a quantum dot dispersed in the dispersion medium,
The light source device characterized in that the axis of high thermal conductivity of the dispersion medium is oriented in the direction in which the thermal resistance of the structure is lowest.
前記分散媒の前記軸は、前記構造体において厚さが最も小さい方向に向いていることを特徴とする請求項1に記載の光源装置。   The light source device according to claim 1, wherein the axis of the dispersion medium is oriented in a direction in which the thickness is smallest in the structure. 前記分散媒の前記軸は、前記構造体において放熱部材が設けられている方向に向いていることを特徴とする請求項1に記載の光源装置。   The light source device according to claim 1, wherein the axis of the dispersion medium is oriented in a direction in which a heat dissipation member is provided in the structure. 前記分散媒は、前記軸の方向に沿って最も高い熱伝導率を有することを特徴とする請求項1〜3のいずれか一項に記載の光源装置。   The light source device according to claim 1, wherein the dispersion medium has the highest thermal conductivity along the direction of the axis. 前記分散媒は、長軸の長さと短軸の長さとが異なる形状を有することを特徴とする請求項1〜4のいずれか一項に記載の光源装置。   5. The light source device according to claim 1, wherein the dispersion medium has a shape in which a length of a major axis is different from a length of a minor axis. 前記分散媒は、液晶性高分子であることを特徴とする請求項1〜5のいずれか一項に記載の光源装置。   The light source device according to claim 1, wherein the dispersion medium is a liquid crystalline polymer. 前記分散媒は、側鎖型の液晶性高分子であることを特徴とする請求項6に記載の光源装置。   The light source device according to claim 6, wherein the dispersion medium is a side chain type liquid crystalline polymer. 前記分散媒は、式(1)に示す液晶性高分子であることを特徴とする請求項7に記載の光源装置。
Figure 2018054748
The light source device according to claim 7, wherein the dispersion medium is a liquid crystalline polymer represented by Formula (1).
Figure 2018054748
前記分散媒の前記軸は、前記構造体に対して磁場を印加して前記分散媒を配向させることによって設定されることを特徴とする請求項1〜8のいずれか一項に記載の光源装置。   The light source apparatus according to claim 1, wherein the axis of the dispersion medium is set by orienting the dispersion medium by applying a magnetic field to the structure. . 前記構造体は、前記分散媒および前記量子ドットを密閉する容器をさらに備えることを特徴とする請求項1〜9のいずれか一項に記載の光源装置。   The light source device according to claim 1, wherein the structure further includes a container that seals the dispersion medium and the quantum dots. 前記構造体に向けて前記量子ドットを励起させる光を照射する発光素子をさらに備えることを特徴とする請求項1〜10のいずれか一項に記載の光源装置。   The light source device according to claim 1, further comprising a light emitting element that emits light that excites the quantum dots toward the structure. 請求項1〜11のいずれか一項に記載の前記光源装置と、前記光源装置からの光が照射される位置に設けられた液晶パネルと、を備える表示装置。   A display device comprising: the light source device according to claim 1; and a liquid crystal panel provided at a position irradiated with light from the light source device.
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