JP2018022840A - Optical module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical module capable of adjusting the intensity of light emitted by a laser element with high accuracy.SOLUTION: An optical module 1 comprises: a light-forming part 20; and protective members 10, 40. The light-forming part 20 includes: a base member 60; a laser element 54; a lens 84; and a light-receiving element 94 disposed between the laser element 54 and the lens 84 in an outgoing direction of light of the laser element 54, and directly receiving light from the laser element 54. The laser element 54 is disposed so that a device-mount face 60A makes an angle of 10° or less with respect to a progressive direction of light from the laser element 54, and the device-mount face 60A makes an angle of 45-135° with respect to a plane perpendicular to a lamination direction of a semiconductor laminate. The light-receiving element 94 is arranged so that a light-receiving face 94A makes an angle of 10° or less with respect to the plane perpendicular to the lamination direction of the semiconductor laminate.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an optical module.

  An optical module in which a semiconductor light emitting element such as a semiconductor laser element is arranged in a package is known (for example, see Patent Documents 1 to 4). Such an optical module is used as a light source of various devices such as a display device, an optical pickup device, and an optical communication device.

  In the optical module, it is necessary to appropriately adjust the intensity of light emitted from the semiconductor laser element. A part of the light emitted from the laser element is received by the light receiving element, the intensity of the light is confirmed, and this is fed back to the power supplied to the laser element, whereby the intensity of the light can be adjusted. As a structure for sending a part of the light emitted from the laser element to the light receiving element, for example, a structure in which a part of the light emitted from the laser element is extracted by an optical component such as a filter or a mirror and sent to the light receiving element is considered. (See, for example, Patent Documents 1 and 2).

JP 2009-93101 A JP 2007-328895 A JP 2007-17925 A JP 2007-65600 A

  Due to the improvement in performance of apparatuses using the optical module as described above and the spread of applications, more strict adjustment of the intensity of light emitted from the laser element is required. Specifically, for the purpose of improving the color reproducibility of a display device, for example, for laser elements that emit light of red, green, and blue, it is required to adjust the intensity of the emitted light with higher accuracy. It has been.

  Therefore, an object is to provide an optical module capable of adjusting the intensity of light emitted from a laser element with high accuracy.

  An optical module according to the present invention includes a light forming portion that forms light, and a protective member that has an exit window that transmits light from the light forming portion and is disposed so as to surround the light forming portion. The light forming unit is mounted on the base member, the mounting surface of the base member, and includes an edge-emitting laser element including a semiconductor laminate, and a spot size of light emitted from the laser element mounted on the base member. A lens for conversion, and a light receiving element that is mounted on the base member and is disposed between the laser element and the lens in the light emitting direction of the laser element and directly receives light from the laser element. In the laser element, an angle formed by the traveling direction of light from the laser element and the mounting surface is 10 ° or less, and an angle formed by a surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting surface is 45 ° or more and 135. It is arranged so that it is below °. The light receiving element is arranged such that an angle formed between the light receiving surface and a surface perpendicular to the stacking direction of the semiconductor stacked body is 10 ° or less.

  According to the optical module, the intensity of the light emitted from the laser element can be adjusted with high accuracy.

It is a schematic perspective view which shows the structure of an optical module. It is a schematic perspective view which shows the structure of an optical module. It is a schematic plan view which shows the structure of an optical module. It is a schematic sectional drawing which shows an example of the structure of a laser element. It is a schematic sectional drawing corresponding to the state which looked at the cross section in alignment with the line segment VV of FIG. 4 in the direction of the arrow. It is a schematic sectional drawing corresponding to the state which looked at the cross section in line segment VI-VI of FIG. 2 in the direction of the arrow. It is a fragmentary top view which shows the state which looked at the 4th photodiode and the 2nd green laser diode in the Y-axis direction.

[Description of Embodiment of Present Invention]
First, embodiments of the present invention will be listed and described. The optical module of the present application includes a light forming portion that forms light, and a protective member that has an exit window that transmits light from the light forming portion and is disposed so as to surround the light forming portion. The light forming unit is mounted on the base member, the mounting surface of the base member, and includes an edge-emitting laser element including a semiconductor laminate, and a spot size of light emitted from the laser element mounted on the base member. A lens for conversion, and a light receiving element that is mounted on the base member and is disposed between the laser element and the lens in the light emitting direction of the laser element and directly receives light from the laser element. In the laser element, the angle formed between the traveling direction of light from the laser element and the mounting surface is 10 ° or less, and the angle formed between the surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting surface is 45 ° or more and 135. It is arranged so that it is below °. The light receiving element is arranged such that an angle formed between the light receiving surface and a surface perpendicular to the stacking direction of the semiconductor stacked body is 10 ° or less.

  The optical module of the present application has a structure in which a light forming portion including an edge-emitting laser element, a lens and a light receiving element arranged on a single base member is surrounded by a single protective member, that is, in a single package. And a laser element, a lens, and a light receiving element. And in the optical module of this application, the light radiate | emitted from the laser element in this single package is directly received by the light receiving element arrange | positioned between a laser element and a lens. Therefore, the intensity of light can be accurately grasped as compared with the case where a part of the light emitted from the laser element is taken out by an optical component such as a filter or a mirror and sent to the light receiving element.

  Further, in the optical module of the present application, the laser element has an angle formed by a traveling direction of light from the laser element and the mounting surface of 10 ° or less and a surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting It arrange | positions so that the angle | corner with a surface may be 45 degrees or more and 135 degrees or less. The light receiving element that receives the light from the laser element is arranged so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction of the semiconductor stacked body is 10 ° or less. The light emitted from the edge-emitting laser element including the semiconductor stacked body has a major axis in the stacking direction of the semiconductor stack and a minor axis in the direction perpendicular to the stacking direction on a plane perpendicular to the optical axis of the emitted light. It becomes an elliptical shape. Therefore, in the laser element, an angle formed by the traveling direction of light from the laser element and the mounting surface is 10 ° or less, and an angle formed by a surface perpendicular to the stacking direction and the mounting surface is 45 ° or more and 135. When the light receiving element is tilted in accordance with the laser element so that the angle formed by the light receiving surface and the surface perpendicular to the stacking direction is 10 ° or less when it is tilted to be less than The light on the long diameter side of the laser light can be received by the light receiving surface. As a result, a sufficient amount of light can be made incident on the light receiving surface without largely cutting light from the laser element toward the lens, and the intensity of the light can be accurately grasped.

  As described above, according to the optical module of the present application, the intensity of light emitted from the laser element can be accurately grasped and adjusted with high accuracy.

  In the optical module, the angle formed between the surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting surface may be not less than 85 ° and not more than 95 °. Thus, even when the laser element is tilted and arranged so that the stacking direction of the semiconductor stacked body is almost parallel to the mounting surface, according to the optical module of the present application in which the light receiving surface of the light receiving element is tilted according to this, The intensity of light emitted from the laser element can be adjusted with high accuracy.

  In the optical module, the light forming portion includes a plurality of laser elements including the laser element mounted on the base member, and the laser element mounted on the base member and disposed corresponding to each of the plurality of laser elements. A plurality of lenses including a lens, a plurality of light receiving elements mounted on the base member and including the light receiving elements disposed corresponding to the plurality of laser elements, and the plurality of laser elements mounted on the base member And a filter that multiplexes light from each other.

  In this way, by arranging a plurality of laser elements in a single package and allowing the light from these to be multiplexed in the package, compared to the case of multiplexing the light from a plurality of packages, It is possible to achieve downsizing of the device in which the optical module is used. As the filter, for example, a wavelength selective filter, a polarization synthesis filter, or the like can be employed.

  In the optical module, the plurality of laser elements may include a first laser element and a second laser element having a difference in oscillation wavelength of 10 nm or less. Even if the angle formed by the plane perpendicular to the stacking direction of the semiconductor stack included in the first laser element and the plane perpendicular to the stacking direction of the semiconductor stack included in the second laser element is 85 ° or more and 95 ° or less. Good. The light from the first laser element and the light from the second laser element may be combined by the filter that is a polarization combining filter. In this way, by arranging laser elements having oscillation wavelengths close to each other so that surfaces perpendicular to the stacking direction of the semiconductor stacked body are close to each other, and employing a polarization combining filter as a filter, Light from the laser element can be easily combined.

  In the optical module, the plurality of laser elements may include a laser element that emits red light, the laser element that emits green light, and the laser element that emits blue light. By doing so, these lights can be combined to form light of a desired color.

[Details of the embodiment of the present invention]
Next, an embodiment of an optical module according to the present invention will be described with reference to FIGS. FIG. 2 is a view corresponding to a state in which the cap 40 of FIG. 1 is removed. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

  Referring to FIGS. 1 and 2, an optical module 1 in the present embodiment includes a stem 10 having a flat plate shape, and a light forming portion that is disposed on one main surface 10A of the stem 10 to form light. 20, a cap 40 disposed in contact with one main surface 10 </ b> A of the stem 10 so as to cover the light forming portion 20, and the other main surface 10 </ b> B side of the stem 10 to the one main surface 10 </ b> A side. And a plurality of lead pins 45 projecting on both sides of one main surface 10A side and the other main surface 10B side. The stem 10 and the cap 40 are in an airtight state by welding, for example. That is, the light forming unit 20 is hermetically sealed by the stem 10 and the cap 40. A space surrounded by the stem 10 and the cap 40 is filled with a gas in which moisture is reduced (removed) such as dry air. The cap 40 is formed with an emission window 41 that transmits light from the light forming unit 20. The exit window 41 may have a flat plate shape whose main surfaces are parallel to each other, or may have a lens shape that collects or diffuses the light from the light forming unit 20. The stem 10 and the cap 40 constitute a protective member.

  Referring to FIGS. 2 and 3, light forming unit 20 includes a base plate 60 that is a base member having a plate shape. The base plate 60 has a rectangular planar shape. Five laser elements are arranged along a region corresponding to one long side of one main surface of the base plate 60.

  Specifically, the first chip mounting area 61 is arranged in an area corresponding to one end of the one long side. The first chip mounting area 61 is a rectangular parallelepiped area in which the thickness of the base plate 60 is larger than the surrounding area. As a result, the height of the first chip mounting area 61 is higher than the surrounding area. On the first chip mounting region 61, a flat plate-like first submount 71 is disposed. A first red laser diode 51 serving as a first laser element is disposed on the first submount 71.

  In a region corresponding to one long side of one main surface of the base plate 60, a second chip mounting region 62, which is a rectangular parallelepiped block, is disposed on the mounting surface adjacent to the first chip mounting region 61. . On the second chip mounting area 62, a flat plate-like second submount 72 is arranged. The plane including the surface on which the first submount 71 is disposed in the first chip mounting area 61 and the plane including the surface on which the second submount 72 is disposed in the second chip mounting area 62 intersect. More specifically, the plane including the surface on which the first submount 71 is disposed in the first chip mounting area 61 and the plane including the surface on which the second submount 72 is disposed in the second chip mounting area 62 are defined. , Orthogonal. A second red laser diode 52 as a second laser element is arranged on the second submount 72. The difference in oscillation wavelength between the first red laser diode 51 and the second red laser diode 52 is 10 nm or less.

  In a region corresponding to one long side of one main surface of the base plate 60, a third chip mounting region 63 is disposed on the side opposite to the first chip mounting region 61 when viewed from the second chip mounting region 62. The The third chip mounting area 63 is a rectangular parallelepiped area in which the thickness of the base plate 60 is larger than the surrounding area. As a result, the height of the third chip mounting area 63 is higher than the surrounding area. On the third chip mounting area 63, a flat plate-like third submount 73 is arranged. The plane including the surface on which the third submount 73 is disposed in the third chip mounting area 63 and the plane including the surface on which the second submount 72 is disposed in the second chip mounting area 62 intersect. More specifically, the plane including the surface on which the third submount 73 is disposed in the third chip mounting area 63 and the plane including the surface on which the second submount 72 is disposed in the second chip mounting area 62 are defined. , Orthogonal. A first green laser diode 53 as a third laser element is disposed on the third submount 73.

  In a region corresponding to one long side of one main surface of the base plate 60, a rectangular parallelepiped is placed on the mounting surface 60A adjacent to the side opposite to the second chip mounting region 62 when viewed from the third chip mounting region 63. A fourth chip mounting area 64, which is a shaped block, is arranged. On the fourth chip mounting area 64, a flat plate-like fourth submount 74 is arranged. The plane including the surface on which the third submount 73 is disposed in the third chip mounting area 63 and the plane including the surface on which the fourth submount 74 is disposed in the fourth chip mounting area 64 intersect. More specifically, the plane including the surface on which the third submount 73 is disposed in the third chip mounting area 63 and the plane including the surface on which the fourth submount 74 is disposed in the fourth chip mounting area 64 are defined. , Orthogonal. A second green laser diode 54 as a fourth laser element is arranged on the fourth submount 74. The difference in oscillation wavelength between the first green laser diode 53 and the second green laser diode 54 is 10 nm or less.

  In a region corresponding to one long side of one main surface of the base plate 60, a fifth chip mounting region 65 is disposed on the side opposite to the third chip mounting region 63 when viewed from the fourth chip mounting region 64. The The fifth chip mounting area 65 is disposed in an area corresponding to the other end of the one long side. The fifth chip mounting area 65 is a rectangular parallelepiped area in which the thickness of the base plate 60 is larger than the surrounding area. As a result, the height of the fifth chip mounting area 65 is higher than the surrounding area. On the fifth chip mounting area 65, a flat plate-like fifth submount 75 is arranged. The plane including the surface on which the fifth submount 75 is disposed in the fifth chip mounting area 65 and the plane including the surface on which the fourth submount 74 is disposed in the fourth chip mounting area 64 intersect. More specifically, the plane including the surface on which the fifth submount 75 is disposed in the fifth chip mounting area 65 and the plane including the surface on which the fourth submount 74 is disposed in the fourth chip mounting area 64 are described. , Orthogonal. A blue laser diode 55 as a fifth laser element is disposed on the fifth submount 75.

  A first photodiode 91 as a first light receiving element is disposed in a region adjacent to the emission direction of the first red laser diode 51 as viewed from the first chip mounting region 61 of the base plate 60. The first photodiode 91 has a light receiving surface 91A.

  In a region adjacent to the emission direction of the second red laser diode 52 when viewed from the second chip mounting region 62 of the base plate 60, a second photodiode support portion 66 that is a rectangular parallelepiped block is disposed. A second photodiode 92 as a second light receiving element is disposed on the second photodiode support portion 66. The second photodiode 92 has a light receiving surface 92A. The plane including the light receiving surface 91A and the plane including the light receiving surface 92A intersect. More specifically, the plane including the light receiving surface 91A and the plane including the light receiving surface 92A are orthogonal to each other.

  A third photodiode 93 as a third light receiving element is disposed in a region adjacent to the emission direction of the first green laser diode 53 as viewed from the third chip mounting region 63 of the base plate 60. The third photodiode 93 has a light receiving surface 93A. The plane including the light receiving surface 92A and the plane including the light receiving surface 93A intersect each other. More specifically, the plane including the light receiving surface 92A and the plane including the light receiving surface 93A are orthogonal to each other.

  In a region adjacent to the emission direction of the second green laser diode 54 when viewed from the fourth chip mounting region 64 of the base plate 60, a fourth photodiode support portion 67, which is a rectangular parallelepiped block, is disposed. A fourth photodiode 94 serving as a fourth light receiving element is disposed on the fourth photodiode support portion 67. The fourth photodiode 94 has a light receiving surface 94A. The plane including the light receiving surface 93A and the plane including the light receiving surface 94A intersect. More specifically, the plane including the light receiving surface 93A and the plane including the light receiving surface 94A are orthogonal to each other.

  A fifth photodiode 95 as a fifth light receiving element is disposed in a region adjacent to the emission direction of the blue laser diode 55 when viewed from the fifth chip mounting region 65 of the base plate 60. The fifth photodiode 95 has a light receiving surface 95A. The plane including the light receiving surface 94A and the plane including the light receiving surface 95A intersect each other. More specifically, the plane including the light receiving surface 94A and the plane including the light receiving surface 95A are orthogonal to each other.

  The first photodiode 91, the second photodiode 92, the third photodiode 93, the fourth photodiode 94, and the fifth photodiode 95 are respectively a first red laser diode 51, a second red laser diode 52, and a first green laser. It is installed at a position to directly receive light from the diode 53, the second green laser diode 54, and the blue laser diode 55. In the present embodiment, light receiving elements are arranged corresponding to all the laser elements. The first photodiode 91 and the second photodiode 92 are photodiodes that can receive red light. The third photodiode 93 and the fourth photodiode 94 are photodiodes that can receive green light. The fifth photodiode 95 is a photodiode capable of receiving blue light.

  The first photodiode 91 is disposed between the first red laser diode 51 and the first lens 81 in the emission direction of the first red laser diode 51. The second photodiode 92 is disposed between the second red laser diode 52 and the second lens 82 in the emission direction of the second red laser diode 52. The third photodiode 93 is disposed between the first green laser diode 53 and the third lens 83 in the emission direction of the first green laser diode 53. The fourth photodiode 94 is disposed between the second green laser diode 54 and the fourth lens 84 in the emission direction of the second green laser diode 54. The fifth photodiode 95 is disposed between the blue laser diode 55 and the fifth lens 85 in the emission direction of the blue laser diode 55.

  On the base plate 60 opposite to the first red laser diode 51 as viewed from the first photodiode 91, a flat plate-like first lens support portion 81B is disposed. And the 1st lens 81 is arrange | positioned on the 1st lens support part 81B. On the base plate 60 opposite to the second red laser diode 52 when viewed from the second photodiode 92, a flat plate-like second lens support portion 82B is disposed. A second lens 82 is disposed on the second lens support portion 82B. On the base plate 60 opposite to the first green laser diode 53 when viewed from the third photodiode 93, a flat plate-like third lens support portion 83B is disposed. The third lens 83 is disposed on the third lens support portion 83B. On the base plate 60 opposite to the second green laser diode 54 when viewed from the fourth photodiode 94, a flat plate-like fourth lens support portion 84B is disposed. And the 4th lens 84 is arrange | positioned on the 4th lens support part 84B. On the base plate 60 opposite to the blue laser diode 55 when viewed from the fifth photodiode 95, a flat plate-like fifth lens support portion 85B is disposed. And the 5th lens 85 is arrange | positioned on the 5th lens support part 85B.

  The first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85 have a lens portion 81A, a lens portion 82A, a lens portion 83A, which are portions whose surfaces are lens surfaces, respectively. It has a lens portion 84A and a lens portion 85A. The first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85 are other than the lens portions 81A, 82A, 83A, 84A, 85A and the lens portions 81A, 82A, 83A, 84A, 85A. Is integrally formed with the area. The first lens 81, the second lens 82, the third lens 83 are formed by the first lens support 81B, the second lens support 82B, the third lens support 83B, the fourth lens support 84B, and the fifth lens support 85B. The central axes of the lens portions 81A, 82A, 83A, 84A, and 85A of the fourth lens 84 and the fifth lens 85, that is, the optical axes of the lens portions 81A, 82A, 83A, 84A, and 85A, are respectively the first red laser diode 51. The second red laser diode 52, the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55 are adjusted to coincide with the optical axes. The first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85 are respectively a first red laser diode 51, a second red laser diode 52, a first green laser diode 53, and a second lens. The spot size of the light emitted from the green laser diode 54 and the blue laser diode 55 is converted. By the first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85, the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, and the second green color. The spot size is converted so that the spot sizes of the light emitted from the laser diode 54 and the blue laser diode 55 coincide.

  On the base plate 60 opposite to the first red laser diode 51 when viewed from the first lens 81, a flat plate-like first filter support portion 86B is disposed. And the 1st filter 86 is arrange | positioned on the 1st filter support part 86B. The first filter 86 is a wavelength selective filter. The first filter 86 reflects red light.

  On the base plate 60 opposite to the second red laser diode 52 when viewed from the second lens 82, a flat plate-like second filter support portion 87B is disposed. And the 2nd filter 87 is arrange | positioned on the 2nd filter support part 87B. The second filter 87 is a red polarization synthesis filter.

  On the base plate 60 opposite to the first green laser diode 53 when viewed from the third lens 83, a flat plate-like third filter support portion 88B is disposed. And the 3rd filter 88 is arrange | positioned on the 3rd filter support part 88B. The third filter 88 is a wavelength selective filter. The third filter 88 transmits red light and reflects green light.

  On the base plate 60 opposite to the second green laser diode 54 when viewed from the fourth lens 84, a flat plate-like fourth filter support portion 89B is disposed. And the 4th filter 89 is arrange | positioned on the 4th filter support part 89B. The fourth filter 89 is a green polarization synthesis filter.

  On the base plate 60 opposite to the blue laser diode 55 when viewed from the fifth lens 85, a flat plate-like fifth filter support portion 90B is disposed. And the 5th filter 90 is arrange | positioned on the 5th filter support part 90B. The fifth filter 90 is a wavelength selective filter. The fifth filter 90 transmits red light and green light, and reflects blue light.

  The first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 each have a flat plate shape having principal surfaces parallel to each other.

  Referring to FIG. 3, the first red laser diode 51, the first photodiode 91, the first lens 81, and the first filter 86 are in a direction along the light emission direction of the first red laser diode 51 (Y-axis direction). Are arranged side by side. The second red laser diode 52, the second photodiode 92, the second lens 82, and the second filter 87 are arranged side by side in the direction (Y-axis direction) along the light emission direction of the second red laser diode 52. . The first green laser diode 53, the third photodiode 93, the third lens 83, and the third filter 88 are arranged side by side in a direction (Y-axis direction) along the light emission direction of the first green laser diode 53. . The second green laser diode 54, the fourth photodiode 94, the fourth lens 84, and the fourth filter 89 are arranged side by side in the direction along the light emission direction of the second green laser diode 54 (Y-axis direction). . The blue laser diode 55, the fifth photodiode 95, the fifth lens 85, and the fifth filter 90 are arranged side by side in the direction (Y-axis direction) along the light emission direction of the blue laser diode 55.

  The first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 are a first red laser diode 51, a second red laser diode 52, a first green laser diode 53, and a second green color. The laser diodes 54 and the blue laser diodes 55 are arranged side by side along a direction that intersects the direction in which the light is emitted from the laser diode 54 and the blue laser diode 55, more specifically, a direction that is orthogonal (X-axis direction). The main surfaces of the first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 are the first red laser diode 51, the second red laser diode 52, and the first green laser diode 53, respectively. The second green laser diode 54 and the blue laser diode 55 are inclined with respect to the light emission direction. More specifically, the main surfaces of the first filter 86, the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90 are respectively the first red laser diode 51, the second red laser diode 52, The first green laser diode 53, the second green laser diode 54, and the blue laser diode 55 are inclined by 45 ° with respect to the light emission direction (Y-axis direction).

  Referring to FIG. 2, the optical module 1 of the present embodiment further includes an electronic cooling module 30 between the stem 10 and the light forming unit 20. The electronic cooling module 30 includes a heat absorbing plate (not shown), a heat radiating plate 32, and a semiconductor pillar 33 arranged side by side between the heat absorbing plate and the heat radiating plate 32 with electrodes interposed therebetween. The heat absorbing plate and the heat radiating plate 32 are made of alumina, for example. The heat absorbing plate is disposed in contact with the other main surface 60B of the base plate 60. The heat radiating plate 32 is disposed in contact with one main surface 10 </ b> A of the stem 10. In the present embodiment, the electronic cooling module 30 is a Peltier module (Peltier element). Then, by passing an electric current through the electronic cooling module 30, the heat of the base plate 60 that contacts the heat absorbing plate moves to the stem 10, and the base plate 60 is cooled. As a result, temperature rises of the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55 are suppressed. Thus, by maintaining the temperature of the laser diode in an appropriate range, it is possible to accurately form light of a desired color.

  Next, the laser element of the present embodiment will be described using the second green laser diode 54 as an example.

  4 and 5 are schematic cross-sectional views showing an example of the structure of the second green laser diode 54. FIG. FIG. 4 is a schematic cross-sectional view corresponding to a state in which a cross section taken along line IV-IV in FIG. 5 is viewed in the direction of the arrow. FIG. 5 is a schematic cross-sectional view corresponding to a state in which a cross section taken along line VV in FIG. 4 is viewed in the direction of the arrow. That is, FIG. 4 and FIG. 5 are sectional views in planes orthogonal to each other.

  4 and 5, the second green laser diode 54 in the present embodiment includes a substrate 110, a semiconductor layer 120, an insulating film 131, a p-side electrode 141, an n-side electrode 142, and a front side. A dielectric multilayer film 160 and a rear dielectric multilayer film 170 are provided. The substrate 110 and the semiconductor layer 120 constitute a semiconductor stacked body. The substrate 110 is made of a group III-V nitride semiconductor. The substrate 110 has a first main surface 110A and a second main surface 110B that is a main surface opposite to the first main surface 110A.

  The semiconductor layer 120 is disposed so as to be in contact with the first main surface 110 </ b> A of the substrate 110. The semiconductor layer 120 is a layer formed by epitaxial growth on the first main surface 110 </ b> A of the substrate 110. The semiconductor layer 120 is made of a group III-V nitride semiconductor. The semiconductor layer 120 includes a buffer layer 121, an n-side cladding layer 122, an n-side guide layer 123, an active layer 124, a first p-side guide layer 125, a block layer 126, a second p-side guide layer 127, A p-side cladding layer 128 and a contact layer 129 are included.

  The buffer layer 121 is disposed so as to be in contact with the first main surface 110A of the substrate 110. The buffer layer 121 is made of a III-V group nitride semiconductor. The buffer layer 121 is a layer formed by epitaxial growth on the first main surface 110 </ b> A of the substrate 110.

  The n-side cladding layer 122 is disposed so as to be in contact with the main surface 121A on the opposite side of the buffer layer 121 from the substrate 110. The n-side cladding layer 122 is made of a III-V group nitride semiconductor. The n-side cladding layer 122 is a layer formed by epitaxial growth on the main surface 121 </ b> A of the buffer layer 121.

  The n-side guide layer 123 is disposed so as to be in contact with the main surface 122A on the opposite side of the n-side cladding layer 122 from the buffer layer 121. The n-side guide layer 123 is made of a III-V group nitride semiconductor. The n-side guide layer 123 is a layer formed by epitaxial growth on the main surface 122A of the n-side cladding layer 122.

  The active layer 124 is disposed so as to be in contact with the main surface 123A of the n-side guide layer 123 opposite to the n-side cladding layer 122. The active layer 124 is made of a III-V nitride semiconductor. The active layer 124 is a layer formed by epitaxial growth on the main surface 123 </ b> A of the n-side guide layer 123. The active layer 124 constitutes an SQW (Single Quantum Well) in which electrons and holes are recombined to generate light. The active layer 124 generates green light.

  The first p-side guide layer 125 is disposed so as to be in contact with the main surface 124A on the opposite side of the active layer 124 from the n-side guide layer 123. The first p-side guide layer 125 is made of a group III-V nitride semiconductor. The first p-side guide layer 125 is a layer formed on the main surface 124A of the active layer 124 by epitaxial growth.

  The block layer 126 is disposed so as to be in contact with the main surface 125A of the first p-side guide layer 125 opposite to the active layer 124. The block layer 126 is made of a group III-V nitride semiconductor. The block layer 126 is a layer formed by epitaxial growth on the main surface 125A of the first p-side guide layer 125.

  The second p-side guide layer 127 is disposed on the main surface 126A of the block layer 126 on the side opposite to the first p-side guide layer 125. The second p-side guide layer 127 is made of a group III-V nitride semiconductor. The second p-side guide layer 127 is a layer formed by epitaxial growth on the main surface 126A of the block layer 126.

  The p-side cladding layer 128 is disposed so as to contact the main surface 127A on the opposite side of the second p-side guide layer 127 from the block layer 126. The p-side cladding layer 128 is made of a group III-V nitride semiconductor. The p-side cladding layer 128 is a layer formed by epitaxial growth on the main surface 127A of the second p-side guide layer 127.

  The contact layer 129 is disposed so as to be in contact with the main surface 128A of the p-side cladding layer 128 opposite to the second p-side guide layer 127. The contact layer 129 is made of a group III-V nitride semiconductor. The contact layer 129 is a layer formed by epitaxial growth on the main surface 128A of the p-side cladding layer 128.

  Here, FIG. 4 corresponds to a cross section perpendicular to the direction in which light repeatedly reflects on the end face in the active layer 124 (hereinafter referred to as “end face reflection direction”). On the other hand, FIG. 5 corresponds to a cross section along the end surface reflection direction. Referring to FIG. 4, a groove 151 is formed in the semiconductor layer 120 in a cross section perpendicular to the end surface reflection direction. The groove 151 is formed so as to extend along the end surface reflection direction. The groove 151 opens in the main surface 129A of the contact layer 129, penetrates the contact layer 129, the p-side cladding layer 128, and the second p-side guide layer 127, and has a bottom wall in the block layer 126. That is, the contact layer 129, the p-side cladding layer 128, and the second p-side guide layer 127 are exposed on the side wall of the groove 151. A plurality of grooves 151 are formed at equal intervals in a direction perpendicular to the end surface reflection direction. As a result, a region sandwiched between adjacent groove portions 151 constitutes a ridge portion 152. The ridge portion 152 includes a contact layer 129, a p-side cladding layer 128, and a second p-side guide layer 127.

An insulating film 131 is formed so as to be in contact with the semiconductor layer 120. The insulating film 131 is made of an insulator such as silicon dioxide (SiO ₂ ). Insulating film 131 covers the bottom wall and the side wall of trench 151 and extends to main surface 129 </ b> A of contact layer 129. In the insulating film 131, an opening 131 </ b> A that penetrates the insulating film 131 is formed. In the opening 131A, the main surface 129A of the contact layer 129 is exposed. A p-side electrode 141 is formed so as to fill the opening 131 </ b> A and extend to the insulating film 131. The p-side electrode 141 is made of a conductor such as a metal that can form an ohmic contact with the contact layer 129, such as Ni / Au (nickel / gold). The p-side electrode 141 is in contact with the contact layer 129 exposed in the opening 131A. The p-side electrode 141 and the contact layer 129 form an ohmic contact. On the other hand, the n-side electrode 142 is disposed so as to be in contact with the second main surface 110B of the substrate 110. The n-side electrode 142 is made of a conductor such as Ti / Al / Ti / Au (titanium / aluminum / titanium / gold), such as a metal capable of ohmic contact with the substrate 110. The n-side electrode 142 and the substrate 110 form an ohmic contact.

  Referring to FIG. 5, front dielectric multilayer film 160 is disposed so as to be in contact with front end surface 120A that is one end surface of semiconductor layer 120 in the end surface reflection direction, and is in contact with rear end surface 120B that is the other end surface. Thus, the rear dielectric multilayer film 170 is arranged. The front dielectric multilayer film 160 and the rear dielectric multilayer film 170 are formed so as to cover the entire front end face 120A and rear end face 120B of the semiconductor layer 120, respectively.

  Next, the operation of the second green laser diode 54 in the present embodiment will be described. Referring to FIGS. 4 and 5, when a voltage is applied between p-side electrode 141 and n-side electrode 142, a current flows between p-side electrode 141 and n-side electrode 142. At this time, holes are injected from the p-side electrode 141 side and electrons are injected from the n-side electrode 142 side into the active layer 124 constituting the SQW. Then, in the active layer 124, holes and electrons are recombined to generate light. The generated light is confined in the thickness direction of the active layer 124 in the active layer 124 sandwiched between the n-side guide layer 123 and the first p-side guide layer 125. On the other hand, the light reflectance at the front end face 120A is set smaller than the reflectance at the rear end face 120B. For example, the reflectance of the light at the front end face 120A is set to about 40%, and the reflectance at the rear end face 120B is set to about 95%. The light confined in the active layer 124 in the thickness direction is repeatedly reflected between the front end face 120A and the rear end face 120B. As a result, light with the same phase is amplified and laser oscillation is achieved. Then, laser light is emitted from the front end face 120A. The second green laser diode 54 is an edge-emitting laser element.

  Here, referring to FIG. 2, the second green laser diode 54 is held and disposed in the fourth chip mounting area 64 on the mounting surface 60 </ b> A of the base plate 60 which is a surface parallel to the XY plane. . 2, 4 and 5, the second green laser diode 54 is arranged such that the stacking direction of the semiconductor stacked body is along the X-axis direction and the end surface reflection direction is along the Y-axis direction. In other words, the second green laser diode 54 has an angle formed by the traveling direction of the light from the second green laser diode 54 and the mounting surface 60A of 10 ° or less (more specifically, the light from the second green laser diode 54). The angle formed by the surface perpendicular to the stacking direction of the semiconductor stack and the mounting surface 60A (XY plane) is 45 ° or more and 135 ° or less (and 85 °). More than 95 °), specifically 90 °.

  The first red laser diode 51, the second red laser diode 52, the first green laser diode 53, and the blue laser diode 55 are edge-emitting laser elements having the same structure as the second green laser diode 54. As in the case of the second green laser diode 54, the second red laser diode 52 is arranged so that the stacking direction of the semiconductor stacked body is along the X-axis direction and the end surface reflection direction is along the Y-axis direction. In other words, the second red laser diode 52 has an angle formed by the traveling direction of light from the second red laser diode 52 and the mounting surface (XY plane) of 10 ° or less (more specifically, the second red laser diode). The angle formed by the mounting surface (XY plane) and the plane perpendicular to the stacking direction of the semiconductor stacked body is 45 ° or more and 135 ° or less (further, the light traveling direction from 52 is parallel to the mounting surface). Is arranged to be 85 ° or more and 95 ° or less), specifically 90 °. On the other hand, the first red laser diode 51, the first green laser diode 53, and the blue laser diode 55 are arranged such that the stacking direction of the semiconductor stacked body is along the Z-axis direction and the end surface reflection direction is along the Y-axis direction. That is, in the first red laser diode 51, the first green laser diode 53, and the blue laser diode 55, the angle formed between the surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting surface is less than 45 °, specifically 0 °. It is arranged to become.

  The angle formed between the plane perpendicular to the stacking direction of the semiconductor stacked body included in the first red laser diode 51 and the plane perpendicular to the stacking direction of the semiconductor stacked body included in the second red laser diode 52 is 85 ° to 95 °. Specifically, it is 90 °. In addition, an angle formed between a plane perpendicular to the stacking direction of the semiconductor stacked body included in the first green laser diode 53 and a plane perpendicular to the stacking direction of the semiconductor stacked body included in the second green laser diode 54 is 85 ° to 95 °. It is 90 ° or less, specifically 90 °.

  Next, the arrangement of the light receiving element with respect to the laser element will be described by taking the arrangement of the fourth photodiode 94 with respect to the second green laser diode 54 as an example. FIG. 6 is a cross-sectional view of the vicinity of the second green laser diode 54, the fourth photodiode 94, and the fourth lens 84 in the XY plane including the optical axis of the second green laser diode 54. FIG. 7 is a plan view of the second green laser diode 54 viewed from the fourth lens 84 side along the optical axis of the second green laser diode 54.

With reference to FIGS. 6 and 7, a fourth photodiode 94 is formed between the plane S ₁ and plane S ₂ perpendicular to the stacking direction of the semiconductor stacked body included in the second green laser diode 54 including the light receiving surface 94A It arrange | positions so that an angle may be 10 degrees or less. Here, the plane S ₂ comprising a light-receiving surface 94A, the inclination angle in a direction intersecting the optical axis of the second green laser diode 54 with respect to the plane S ₁ (plane S ₂ and the plane S ₁ viewed from the Z direction shown in FIG. 6 And an inclination angle of the plane S ₂ including the light receiving surface 94A in a state parallel to the optical axis of the second green laser diode 54 with respect to the plane S ₁ (the plane S viewed from the Y direction shown in FIG. 7). both the ₂ and the angle between the plane S ₁₎ is such that the 10 ° or less, a fourth photodiode 94 is disposed. More specifically, the plane S ₂ and the plane S ₁ are both planes parallel to the YZ plane, and the angle formed by both planes is 0 °.

  In addition, the second photodiode 92 includes a plane including the light receiving surface 92 </ b> A and a semiconductor stacked body included in the second red laser diode 52, similarly to the arrangement relationship between the fourth photodiode 94 and the second green laser diode 54. The angle formed with the plane perpendicular to the stacking direction is 10 ° or less. Further, the first photodiode 91, the third photodiode 93, and the fifth photodiode 95 include a plane including the light receiving surfaces 91A, 93A, and 95A, the first red laser diode 51, the first green laser diode 53, and the blue laser diode, respectively. 55 is disposed so that an angle formed with a plane perpendicular to the stacking direction of the semiconductor stacked body included in 55 is 10 ° or less.

Next, the operation of the optical module 1 in the present embodiment will be described. Referring to FIG. 3, the red light emitted from the first red laser diode 51 travels along the optical path L _1. At this time, part of the red light directly enters the light receiving surface 91 </ b> A of the first photodiode 91. Thereby, the intensity of the red light emitted from the first red laser diode 51 is grasped, and the first red laser diode 51 is changed based on the difference between the grasped light intensity and the target light intensity to be emitted. The supplied power is adjusted. The red light that has passed over the first photodiode 91 enters the lens portion 81A of the first lens 81, and the spot size of the light is converted. Specifically, for example, red light emitted from the first red laser diode 51 is converted into collimated light. The red light whose spot size has been converted in the first lens 81 travels along the optical path L ₁ and enters the first filter 86. The first filter 86 is a wavelength selective filter that reflects red light. Therefore, the light emitted from the first red laser diode 51 travels along the optical path L ₂ is reflected at the first filter 86. The light emitted from the first red laser diode 51 passes through the second filter 87, the third filter 88, the fourth filter 89, and the fifth filter 90, and passes through the optical path L ₃ , the optical path L ₄ , the optical path L _5, and further progress along the optical path L _6, through the exit window 41 of the cap 40 is emitted to the outside of the optical module 1.

Red light emitted from the second red laser diode 52 travels along the optical path L _7. At this time, part of the red light is directly incident on the light receiving surface 92A of the second photodiode 92. Thus, the intensity of the red light emitted from the second red laser diode 52 is grasped, and the second red laser diode 52 is determined based on the difference between the grasped light intensity and the target light intensity to be emitted. The supplied power is adjusted. The red light that has passed over the second photodiode 92 enters the lens portion 82A of the second lens 82, and the spot size of the light is converted. Specifically, for example, red light emitted from the second red laser diode 52 is converted into collimated light. The red light whose spot size has been converted in the second lens 82 travels along the optical path L ₇ and enters the second filter 87. The second filter 87 is a polarization beam combining filter that transmits light whose vibration direction is the horizontal direction (X-axis direction) among red light and reflects light whose vibration direction is the vertical direction (Z-axis direction). . On the other hand, the vibration direction of light from the first red laser diode 51 and the second red laser diode 52 is a direction perpendicular to the stacking direction of the semiconductor stacked body. That is, the vibration direction of light from the first red laser diode 51 is the X-axis direction, and the vibration direction of light from the second red laser diode 52 is the Z-axis direction. Therefore, the light emitted from the second red laser diode 52 merges is reflected at the second filter 87 in the optical path L _3. As a result, the red light from the second red laser diode 52 is red light and combined from the first red laser diode 51 travels along the optical path L _3. The light emitted from the second red laser diode 52 passes through the third filter 88, the fourth filter 89, and the fifth filter 90, and further travels along the optical path L ₄ , the optical path L ₅ and the optical path L _6. Then, the light is emitted to the outside of the optical module 1 through the emission window 41 of the cap 40.

Green light emitted from the first green laser diode 53 travels along the optical path L _8. At this time, part of the green light directly enters the light receiving surface 93A of the third photodiode 93. Thereby, the intensity of the green light emitted from the first green laser diode 53 is grasped, and the first green laser diode 53 is determined based on the difference between the grasped light intensity and the target light intensity to be emitted. The supplied power is adjusted. The green light that has passed over the third photodiode 93 is incident on the lens portion 83A of the third lens 83, and the spot size of the light is converted. Specifically, for example, green light emitted from the first green laser diode 53 is converted into collimated light. The green light whose spot size has been converted in the third lens 83 travels along the optical path L ₈ and enters the third filter 88. The third filter 88 is a wavelength selective filter that transmits red light and reflects green light. Therefore, the light emitted from the first green laser diode 53 merges is reflected in the third filter 88 in the optical path L _4. As a result, green light from the first green laser diode 53 is red light and combined from the red light and the second red laser diode 52 from the first red laser diode 51, along the optical path L ₄ proceed. Then, the light emitted from the first green laser diode 53 passes through the fourth filter 89 and the fifth filter 90 and further travels along the optical path L ₅ and the optical path L ₆ , and passes through the emission window 41 of the cap 40. To the outside of the optical module 1.

Green light emitted from the second green laser diode 54 travels along the optical path L _9. At this time, a part of green light directly enters the light receiving surface 94A of the fourth photodiode 94. As a result, the intensity of the green light emitted from the second green laser diode 54 is grasped, and the second green laser diode 54 is determined based on the difference between the grasped light intensity and the target light intensity to be emitted. The supplied power is adjusted. The green light that has passed over the fourth photodiode 94 enters the lens portion 84A of the fourth lens 84, and the spot size of the light is converted. Specifically, for example, green light emitted from the second green laser diode 54 is converted into collimated light. The green light whose spot size has been converted by the fourth lens 84 travels along the optical path L ₉ and enters the fourth filter 89. The fourth filter 89 is a polarization beam combining filter that transmits light whose vibration direction is the horizontal direction (X-axis direction) out of green light and reflects light whose vibration direction is the vertical direction (Z-axis direction). . On the other hand, the vibration direction of light from the first green laser diode 53 and the second green laser diode 54 is a direction perpendicular to the stacking direction of the semiconductor stacked body. That is, the vibration direction of light from the first green laser diode 53 is the X-axis direction, and the vibration direction of light from the second green laser diode 54 is the Z-axis direction. Therefore, the light emitted from the second green laser diode 54 joins the optical path L ₅ is reflected in the fourth filter 89. As a result, the green light from the second green laser diode 54 is red light from the first red laser diode 51, red light from the second red laser diode 52, and green light from the first green laser diode 53. When are multiplexed, it travels along the optical path L _5. Then, the light emitted from the second green laser diode 54 passes through the fifth filter 90 and further travels along the optical path L ₆ , and is emitted to the outside of the optical module 1 through the emission window 41 of the cap 40. To do.

Blue light emitted from the blue laser diode 55 travels along the optical path L _10. At this time, part of the blue light is directly incident on the light receiving surface 95 </ b> A of the fifth photodiode 95. Thereby, the intensity of the blue light emitted from the blue laser diode 55 is grasped, and the electric power supplied to the blue laser diode 55 based on the difference between the grasped light intensity and the target light intensity to be emitted. Is adjusted. The blue light that has passed over the fifth photodiode 95 enters the lens portion 85A of the fifth lens 85, and the spot size of the light is converted. Specifically, for example, blue light emitted from the blue laser diode 55 is converted into collimated light. The blue light whose spot size has been converted by the fifth lens 85 travels along the optical path L ₁₀ and enters the fifth filter 90. The fifth filter 90 is a wavelength selective filter that transmits red light and green light and reflects blue light. Therefore, light emitted from the blue laser diode 55 joins the optical path L ₆ is reflected in the fifth filter 90. As a result, the blue light from the blue laser diode 55 is red light from the first red laser diode 51, red light from the second red laser diode 52, green light from the first green laser diode 53, and It is combined with the green light from the second green laser diode 54, travels along the optical path L ₆ , and exits the optical module 1 through the exit window 41 of the cap 40.

  In this manner, the light formed by combining the red, green, and blue light is emitted from the emission window 41 of the cap 40. Here, in the optical module 1 in the present embodiment, the light emitted from the first red laser diode 51, the second red laser diode 52, the first green laser diode 53, the second green laser diode 54, and the blue laser diode 55. Are respectively disposed between the first lens 81, the second lens 82, the third lens 83, the fourth lens 84, and the fifth lens 85, the first photodiode 91, the second photodiode 92, and the second Light is directly received by the third photodiode 93, the fourth photodiode 94, and the fifth photodiode 95. Therefore, it is possible to accurately grasp the light intensity and adjust the light intensity with high accuracy.

  Furthermore, in the optical module 1 according to the present embodiment, the second red laser diode 52 and the second green laser diode 54 are formed by a surface perpendicular to the stacking direction of the semiconductor stacked body and a mounting surface (XY plane). It arrange | positions so that an angle may be 45 degrees or more and 135 degrees or less, specifically 90 degrees. The second photodiode 92 and the fourth photodiode 94 that receive the light from the second red laser diode 52 and the second green laser diode 54 are surfaces perpendicular to the light receiving surfaces 92A and 94A and the stacking direction of the semiconductor stacked body. Are arranged so that the angle formed by

  The light emitted from the second red laser diode 52 and the second green laser diode 54, which are edge-emitting laser elements including the semiconductor stacked body, has a stacking direction of the semiconductor stacked body in a plane perpendicular to the optical axis of the emitted light. It has an elliptical shape with a major axis and a minor axis in the direction perpendicular to the stacking direction. Therefore, when the second red laser diode 52 and the second green laser diode 54 are arranged so as to be inclined so that an angle formed by a surface perpendicular to the stacking direction and the mounting surface is 45 ° or more and 135 ° or less. The second photodiode 92 and the fourth photodiode 94 are made the second red laser diode 52 and the second green laser diode so that the angle formed between the light receiving surfaces 92A and 94A and the plane perpendicular to the stacking direction is 10 ° or less. By inclining the lens 54 in accordance with 54, the light on the long diameter side of the laser light can be received by the light receiving surfaces 92A and 94A. As a result, a sufficient amount of light is incident on the light receiving surfaces 92A and 94A without largely cutting the light from the second red laser diode 52 and the second green laser diode 54 toward the second lens 82 and the fourth lens 84, The strength can be accurately grasped.

  As described above, the optical module 1 is an optical module that can accurately grasp the intensity of light emitted from the laser element and adjust it with high accuracy.

  The submount is made of a material having a thermal expansion coefficient close to that of an element mounted on the submount, and can be made of, for example, AlN, SiC, Si, diamond, or the like. Moreover, as a material which comprises a stem and a cap, iron, copper, etc. which are materials with high heat conductivity may be employ | adopted, for example, AlN, CuW, CuMo, etc. may be employ | adopted. Moreover, although the case where the light from five laser elements was combined was demonstrated in the said embodiment, the number of laser elements can be arbitrarily set according to the use of an optical module.

  In the above embodiment, the angle formed by the surface perpendicular to the stacking direction of the semiconductor stack of the first red laser diode 51 and the first green laser diode 53 and the mounting surface (XY plane) of the base plate 60. Is 0 °, and the angle formed by the surface perpendicular to the stacking direction of the semiconductor stack of the second red laser diode 52 and the second green laser diode 54 and the mounting surface (XY plane) of the base plate 60 is 90 °. However, although an example in which laser beams of the same color are combined by the polarization combining filter has been described, the arrangement of the laser elements is not limited to this. For example, the angle formed by the surface perpendicular to the stacking direction of the semiconductor stacks of the first red laser diode 51 and the first green laser diode 53 and the mounting surface (XY plane) of the base plate 60 is 45 °. The angle formed by the surface perpendicular to the stacking direction of the semiconductor stack of the two red laser diodes 52 and the second green laser diode 54 and the mounting surface (XY plane) of the base plate 60 is 135 °, and lasers of the same color The light may be combined by a polarization combining filter.

  It should be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive in any aspect. The scope of the present invention is defined by the scope of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the scope of the claims.

  The optical module of the present application can be applied particularly advantageously to an optical module that is required to adjust the intensity of light emitted from a laser element with high accuracy.

DESCRIPTION OF SYMBOLS 1 Optical module 10 Stem 10A, 10B Main surface 20 Light formation part 30 Electronic cooling module 32 Heat sink 33 Semiconductor pillar 40 Cap 41 Output window 45 Lead pin 51 1st red laser diode 52 2nd red laser diode 53 1st green laser diode 54 Second green laser diode 55 Blue laser diode 60 Base plate 60A Mounting surface 60B Main surface 61 First chip mounting area 62 Second chip mounting area 63 Third chip mounting area 64 Fourth chip mounting area 65 Fifth chip mounting area 66 2 photodiode support portion 67 4th photodiode support portion 71 1st submount 72 2nd submount 73 3rd submount 74 4th submount 75 5th submount 81 1st lenses 81A, 82A, 83A, 84A, 85A Lens unit 81B first Second support 82 second lens 82B second lens support 83 third lens 83B third lens support 84 fourth lens 84B fourth lens support 85 fifth lens 85B fifth lens support 86 first filter 86B first Filter support portion 87 Second filter 87B Second filter support portion 88 Third filter 88B Third filter support portion 89 Fourth filter 89B Fourth filter support portion 90 Fifth filter 90B Fifth filter support portion 91 First photodiode 91A, 92A, 93A, 94A, 95A Light-receiving surface 92 Second photodiode 93 Third photodiode 94 Fourth photodiode 95 Fifth photodiode 110 Substrate,
110A, 110B Main surface 120 Semiconductor layer 120A Front end surface 120B Rear end surface 121 Buffer layer 121A Main surface 122 n-side cladding layer 122A main surface 123 n-side guide layer 123A main surface 124 active layer 124A main surface 125 p-side guide layer 125A main surface 126 Block layer 126A Main surface 127 p-side guide layer 127A main surface 128 p-side cladding layer 128A main surface 129 contact layer 129A main surface 131 insulating film 131A opening 141 p-side electrode 142 n-side electrode 151 groove 152 ridge 160 front dielectric Body multilayer film 170 Rear dielectric multilayer film

Claims (5)

A light forming part for forming light;
A protective member that has an exit window that transmits light from the light forming portion and is disposed so as to surround the light forming portion,
The light forming part is
A base member;
An edge-emitting laser element mounted on the mounting surface of the base member and including a semiconductor laminate;
A lens mounted on the base member and converting a spot size of light emitted from the laser element;
A light receiving element mounted on the base member, disposed between the laser element and the lens in the light emitting direction of the laser element, and directly receiving light from the laser element;
In the laser element, an angle formed between a traveling direction of light from the laser element and the mounting surface is 10 ° or less, and an angle formed between a surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting surface is It is arranged to be 45 degrees or more and 135 degrees or less,
The said light receiving element is an optical module arrange | positioned so that the angle | corner which a light receiving surface and the surface perpendicular | vertical to the lamination direction of the said semiconductor laminated body make may be 10 degrees or less.   2. The optical module according to claim 1, wherein an angle formed by a surface perpendicular to the stacking direction of the semiconductor stacked body and the mounting surface is 85 ° or more and 95 ° or less. The light forming part is
A plurality of laser elements including the laser element mounted on the base member;
A plurality of lenses including the lens mounted on the base member and disposed corresponding to each of the plurality of laser elements;
A plurality of light receiving elements mounted on the base member and including the light receiving elements disposed corresponding to the plurality of laser elements;
The optical module according to claim 1, further comprising: a filter mounted on the base member and configured to multiplex light from the plurality of laser elements. The plurality of laser elements include a first laser element and a second laser element having a difference in oscillation wavelength of 10 nm or less,
An angle formed by a plane perpendicular to the stacking direction of the semiconductor stack included in the first laser element and a plane perpendicular to the stacking direction of the semiconductor stack included in the second laser element is 85 ° or more and 95 ° or less. And
The optical module according to claim 3, wherein the light from the first laser element and the light from the second laser element are combined by the filter that is a polarization beam combining filter.   5. The light according to claim 3, wherein the plurality of laser elements include the laser element that emits red light, the laser element that emits green light, and the laser element that emits blue light. module.

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