JP2018016543A - Gas doping system for controlled doping of melt of semiconductor grade material or solar grade material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a crystal lifting device for manufacturing an ingot.SOLUTION: The present invention includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a supply pipe, an evaporation container, and a flow rate limiting device. The supply pipe is located in the furnace, and includes at least one supply pipe side wall, a first end part through which a solid dopant introduced into the supply pipe passes, and an opening part on the opposite side from the first end part through which a gas dopant introduced in the furnace passes. The evaporation container is configured to evaporate a dopant inside, and arranged nearby the opening of the supply pipe. The flow rate limiting device enables a solid dopant to move passing through the flow rate limiting device, and is configured to limit a flow of the gas dopant passing through the flow rate limiting device and also arranged in the supply between the first end and evaporation container.SELECTED DRAWING: Figure 1

Description

  The field relates generally to the preparation of single crystals of semiconductor grade materials or solar grade materials, and more specifically to gas doping systems for controlled doping of melts of semiconductor grade materials or solar grade materials.

  Single crystal silicon, which is the starting material in most processes for the production of semiconductor electronic components, is generally prepared by the so-called Czochralski ("Cz") method. In this method, polycrystalline silicon (“polysilicon”) is charged into a crucible and melted, a seed crystal is brought into contact with molten silicon, and a single crystal is grown by slowly pulling it up.

  A predetermined amount of dopant is added to the melt to achieve the desired resistivity in the silicon crystal. Conventionally, the dopant is supplied into the melt from a supply hopper positioned several feet above the silicon melt surface. However, volatile dopants tend to evaporate to the surrounding environment without control, resulting in the generation of oxide particulates (ie, suboxides) that can enter the melt or be incorporated into the growing crystal, This approach is not preferred for such dopants. These particles can serve as non-uniform nucleation sites, ultimately resulting in failure of the crystal pulling process.

  In addition, in conventional systems, the sublimation of dopant grains at the melt surface often causes a local temperature drop in the surrounding silicon melt, causing “silicon boats” adjacent to the dopant grains. Bring one after another. These silicon boats, along with the surface tension of the melt, prevent many of the dopant grains reaching the melt surface from sinking into the melt, thus increasing the time during which sublimation to the atmosphere can occur. This phenomenon results in a significant loss of dopant to the gaseous environment and further increases the concentration of contaminant particles in the growth chamber.

  Some known doping systems introduce a volatile dopant as a gas into the growth chamber. However, such a system must be refilled manually each time the doping process is performed. In addition, such a system cannot be refilled during use. As a result, such systems have limited dopant maximum loading capacity (or payload capacity) for a single growth process. Thus, such a system limits the size of the silicon ingot that can be grown. In addition, such systems tend to supply dopants non-uniformly during the growth process, thereby increasing the change in dopant concentration along the longitudinal axis of the grown ingot.

  In other doping systems, an inert gas is used to supply volatile dopants into the growth chamber. However, the use of an inert gas tends to dilute the gaseous dopant, thereby reducing the dopant concentration and purging the evaporated dopant from the growth chamber too quickly. For example, dopants with low segregation coefficients such as arsenic (0.3) and phosphorus (0.35) have a dopant concentration in the melt that is about three times higher than the desired dopant concentration in the grown crystal to compensate. I need. As a result, the evaporated dopant does not have sufficient time to diffuse into the silicon melt, and more dopant is needed to achieve the desired dopant concentration in the silicon melt.

  Accordingly, there is a need for a simple and cost effective technique for producing low resistivity doped single crystal silicon by the Czochralski method.

  This background section is intended to introduce the reader to various aspects of the technology that may be related to various aspects of the present disclosure described below and / or in the claims. This discussion is believed to help provide the reader with background information that facilitates a better understanding of the various aspects of the disclosure. Accordingly, it should be understood that these descriptions can be interpreted in this respect rather than as an admission of the prior art.

  In one aspect, a crystal pulling apparatus for producing a semiconductor grade ingot or a solar grade ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt of semiconductor grade material or solar grade material. The gas doping system includes a supply pipe, an evaporation vessel, and a flow restriction device. A supply tube is positioned in the furnace, and a first end through which at least one supply tube sidewall, a solid dopant introduced into the supply tube passes, and a gaseous dopant introduced into the furnace pass through. And an opening opposite to the end. The evaporation container is configured to evaporate the dopant therein and is disposed in the vicinity of the opening of the supply pipe. The flow restrictor is configured to allow the solid dopant to move through the flow restrictor and restrict the flow of gaseous dopant through the flow restrictor, and within the supply tube, the first end And the evaporation container.

  In another aspect, a crystal pulling apparatus for making a semiconductor grade ingot or a solar grade ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt of semiconductor grade material or solar grade material. The gas doping system includes a supply tube, an evaporation vessel, and a fluid flow channel. A supply tube is positioned in the furnace, and a first end through which at least one supply tube sidewall, a solid dopant introduced into the supply tube passes, and a gaseous dopant introduced into the furnace pass through. And an opening opposite to the end. The evaporation container is configured to evaporate the dopant therein and is disposed in the vicinity of the opening of the supply pipe. The evaporation container includes a bottom surface extending inward from a supply pipe side wall, and a container side wall adjacent to the bottom surface and extending upward from the bottom surface. The fluid flow passage is at least partially defined by the container side wall and the supply pipe side wall.

FIG. 1 is a cross-sectional view of a crystal pulling apparatus including a gas doping system. FIG. 2 is a cross-sectional view of the gas doping system shown in FIG. 1 with various features omitted for purposes of illustration. FIG. 3 is a cross-sectional view of an alternative gas doping system in which various features have been omitted for purposes of illustration.

  Like reference numerals used in the various drawings indicate like elements.

  A crystal pulling apparatus is shown schematically at 100 in FIG. The crystal pulling apparatus 100 generally includes a crucible 102 for holding a melt 104 of semiconductor or solar grade material, such as silicon, surrounded by a susceptor 106 housed in a furnace 108. The semiconductor grade material or the solar grade material is melted by heat supplied from one or more heating elements 110 surrounded by the heat insulating material 112.

  A pulling mechanism 114 for growing an ingot 116 and pulling the ingot 116 out of the melt 104 is provided in the crystal pulling apparatus 100. The pulling mechanism 114 includes a pulling cable 118, a seed holder or seed chuck 120 connected to one end of the pulling cable 118, a seed crystal 122 connected to the seed holder or seed chuck 120 for starting crystal growth, including.

  Crystal puller 100 also includes a doping system (shown schematically at 130) for introducing gaseous dopant 132 into melt 104. The doping system 130 includes a supply pipe 134, an evaporation container 136, and a flow restriction device 138. In this embodiment, the gas doping system 130 also includes a dopant supply device 140, a positioning system 142, and an inert gas supply 144. In general, the gas doping system is configured to flow a gas dopant 132 across the melt surface 146. The gaseous dopant 132 may be introduced into the furnace 108 before initiating crystal growth and / or during crystal growth as shown in FIG.

  Volatile solid dopants 148, such as arsenic, phosphorus, or any other element or compound having a suitably low sublimation or evaporation temperature that allows the gas doping system to function as described herein. In operation, the first end 150 of the supply pipe 134 is introduced into the supply pipe 134. The solid dopant 148 falls down through the supply tube 134, passes through the flow restrictor 138 and enters the evaporation vessel 136. The heat supplied to the evaporation vessel 136 evaporates the solid dopant 148 into a gaseous dopant 132. As the gas dopant 132 expands, the flow restrictor 138 prevents the gas dopant 132 from flowing back through the flow restrictor 138 and into the cooler portion of the supply tube 134 (“backflow”). . The inert gas 152 supplied by the inert gas supply 144 may flow through the supply pipe 134 and through the flow restrictor 138 to further limit the backflow of the gas dopant 132. As the gaseous dopant 132 evaporates, the gaseous dopant 132 flows across the melt surface 146 out of the supply tube 134. Since the solid dopant 148 is consumed by evaporation, more solid dopant 148 can be supplied into the evaporation vessel 136 by the supply device 140. By supplying solid dopant 148 to evaporation vessel 136 continuously or intermittently, a relatively constant gas dopant 132 concentration can be maintained on melt surface 146 during the doping and crystal growth processes. . Further, compared to similar dopant delivery systems, the flow restrictor 138 reduces the amount of inert gas flow required to prevent backflow of gas dopants and / or to supply gas dopants to the melt surface. cut back. As a result, adverse effects associated with the use of inert gas flow in gas doping systems, such as dilution of gas dopant concentration, and excessive purging of gas dopants from the furnace are also reduced.

  Referring to FIG. 2, the supply tube 134 is opposite the first end 150 through which the solid dopant 148 introduced passes and the gaseous dopant 132 introduced into the furnace 108 passes. And a supply tube sidewall 154 having a side opening 156. In the embodiment shown in FIGS. 1 and 2, the supply tube 134 has a generally cylindrical shape defined by a single supply tube sidewall 154 made of quartz glass (or fused quartz). In other embodiments, the supply tube 134 has any other suitable shape and / or any number of supply tube sidewalls that allow the gas doping system 130 to function as described herein. It's okay. In still other embodiments, the supply tube 134 is tungsten, molybdenum, or any other suitable non-reactive refractory material (metal) that allows the gas doping system 130 to function as described herein. And ceramic).

  A supply tube 134 is positioned within the furnace 108 and extends through the valve assembly 158 to the outside of the furnace 108. In the embodiment shown in FIG. 1, the supply tube 134 is slidably coupled to the positioning system 142. The positioning system 142 is configured to raise and / or lower the supply tube 134. In the embodiment shown in FIG. 1, the positioning system 142 includes a rail 160, a connecting member 162, and a motor (not shown) configured to move the connecting member 162 along the rail 160. The rail 160 extends in a direction substantially parallel to the longitudinal axis 164 of the supply tube 134. The connecting member 162 is slidably connected to the rail 160 and attached to the supply pipe 134. Using the positioning system 142, the supply tube 134 may be raised out of the furnace 108 and lowered into the furnace 108. In other embodiments. The supply tube 134 may be located generally within the furnace 108 and / or may be permanently attached to the furnace 108. In still other embodiments, the supply tube 134 may be positioned in the furnace 108 and / or in the furnace 108 in any form that allows the gas doping system 130 to function as described herein. Alternatively, it may be fixed outside the furnace 108.

  In the embodiment shown in FIGS. 1 and 2, the supply tube 134 is angled with respect to the melt surface 146 to facilitate the distribution of the gaseous dopant 132 across the melt surface 146. In the embodiment shown in FIGS. 1 and 2, the supply tube 134 is such that the longitudinal axis 164 of the supply tube 134 forms an angle between about 45 ° and about 75 ° with respect to the melt surface 146. Angled. The opening 156 may be angled with respect to the longitudinal axis 164 of the supply tube 134 to facilitate distribution of the gaseous dopant 132 across the melt surface 146. For example, in the embodiment shown in FIGS. 1 and 2, the opening 156 is such that the opening 156 is substantially parallel to the melt surface 146 and the opening 156 is at the longitudinal axis 164 of the supply tube 134. In contrast, the angle is such that the angle is between about 45 ° and about 75 °. In other embodiments, the supply tube 134 is substantially relative to the melt surface 146 such that the longitudinal axis 164 of the supply tube 134 forms an angle between about 90 degrees with respect to the melt surface 146. May be positioned vertically. In still other embodiments, the supply tube 134 and / or opening 156 has any other suitable configuration or orientation that allows the gas doping system 130 to function as described herein. Good.

  In this embodiment, the supply tube 134 is communicatively coupled to the inert gas supply 144 to reduce the back flow of the gas dopant 132. The inert gas 152 may be introduced into the supply pipe 134 from the inert gas supply unit 144 at a predetermined flow rate so that the inert gas 152 flows downward toward the opening 156. As will be described in more detail below, the flow restrictor 138 reduces the flow of inert gas 152 required to prevent backflow of the gas dopant 132 and to supply the gas dopant 132 to the melt surface 146, And / or remove. For example, an inert gas flow rate of less than about 10 normal liters / min, less than about 5 normal liters / min, or even less than about 2 normal liters / min provides sufficient supply of gaseous dopant to the melt surface 146. It can be used with the gas doping system 130 while maintaining. In the embodiment shown in FIGS. 1 and 2, the inert gas 152 is argon, but any suitable inert gas that allows the gas doping system 130 to function as described herein may be used. It's okay.

  The supply tube 134 in this embodiment is communicatively coupled to a dopant supply device 140 that is configured to supply solid dopant 148 into the supply tube 134. In this embodiment, the dopant delivery device 140 is automated, but in other embodiments it may be manually operated or only partially automated. The supply device 140 automatically supplies solid dopant 148 into the supply tube 134 based on one or more user-defined parameters and / or environment-specific parameters (or environment-specific parameters). May be configured. For example, the automatic feeder 140 may include the following parameters: preset time (seconds) during the growth process, user-defined interval (seconds), mass of solid dopant 148 in the feed tube 134 and / or evaporation vessel 136, feed tube 134. Solid dopant 148 based on one or more of the concentration of the gas dopant 132 in the evaporation vessel 136 and / or the furnace 108 and the volume flow rate or mass flow rate of the gas dopant 132 and / or inert gas 152. May be automatically supplied into the supply pipe 134. The continuous and / or intermittent supply of solid dopant 148 to the evaporation vessel 136 allows a relatively constant gas dopant concentration to be maintained in the furnace 108 during the crystal growth process, and in the growth ingot. This results in a more uniform dopant concentration profile.

  The supply device 140 of this embodiment is coupled to a controller 182 that is configured to control the frequency and / or amount of dopant 148 supplied by the supply device 140 into the supply tube 134. The controller 182 sends signals to the controller 182 and / or supply device 140 and signals from the controller 182 and / or supply device 140 based on one or more user-defined parameters and / or environment specific parameters. A processor 184 configured to receive is included. In this embodiment, the controller 182 includes a user interface 186 coupled to the processor 182 and a sensor 188 coupled to the processor 182. User interface 186 is configured to receive user-defined parameters and communicates user-defined parameters to processor 184 and / or controller 182. Sensor 188 is configured to receive and / or measure environment specific parameters and communicates such environment specific parameters to processor 184 and / or controller 182.

  The evaporation container 136 is positioned in the vicinity of the opening 156 in the supply pipe 134. The evaporation container 136 is configured to evaporate the dopant therein. Specifically, the evaporation vessel is configured to hold the dopant 148 and to transfer heat to the dopant 148 such that the dopant evaporates within the evaporation vessel 136. In this embodiment, the evaporation vessel 136 may be positioned sufficiently close to the melt 104 so that the radiant heat from the melt 104 is sufficient to evaporate the dopant 148 in the evaporation vessel 136. For example, the evaporation vessel 136 may be positioned between about 1 cm and about 15 cm above the melt surface 146. In other embodiments, a separate heating element (not shown) may be used to supply heat for evaporation to the evaporation vessel 136 to evaporate the dopant 148 inside the evaporation vessel 136.

  In the embodiment shown in FIGS. 1 and 2, the evaporation vessel 136 has a bottom surface 166 extending laterally inwardly from the supply tube side wall 154, an adjoining bottom surface 166, and the supply tube longitudinal axis 164 from the bottom surface 166. And a container side wall 168 extending upward along. In alternative embodiments, the evaporation vessel 136 may have any other suitable configuration that allows the gas doping system 130 to function as described herein. In the embodiment shown in FIGS. 1 and 2, the evaporation vessel 136 and the supply tube 134 are made from a single quartz glass. Integrating the evaporation vessel into the supply tube can provide a relatively simple structure of the gas doping system and can reduce the overall size of the gas doping system. As a result, supply tubes and evaporation vessels in the furnace using a positioning system such as positioning system 142 can be made more easily. In other embodiments, the evaporation vessel 136 may be made of any suitable material that allows the gas doping system 130 to function as described herein. In still other embodiments, the evaporation vessel 136 and the supply tube 134 may be made as separate parts.

  The fluid flow passage 170 in this embodiment is defined in part by the container side wall 168 and the supply tube side wall 154. The fluid flow passage 170 provides fluid communication between the evaporation vessel 136 and an opening 156 for the gaseous dopant 132 that is evaporated in the evaporation vessel 136. The cross-sectional area of the fluid flow passage 170 perpendicular to the longitudinal axis 64 of the supply tube 134 may be adjusted to increase or decrease the flow rate of the gaseous dopant 132 through the fluid flow passage. For example, the cross-sectional area of the fluid flow passage 170 can be reduced by increasing the length of the bottom surface 166. Similarly, the length of the fluid flow passage 170 can be increased or decreased by changing the height of the container sidewall 168. By adjusting the cross-sectional area or length of the fluid flow passage 170, the flow rate of the gaseous dopant 132 flowing out of the supply tube 134 can be optimized for maximum doping efficiency.

  The flow restrictor 138 is positioned in the supply pipe 134 between the first end 150 and the evaporation vessel 136. The flow restrictor 138 is configured to allow the solid dopant 148 to move through the flow restrictor and restrict the flow of gaseous dopant 132 through the flow restrictor. Therefore, the flow restrictor 138 acts as a one-way valve for the dopant supplied to the furnace 108 via the gas doping system 130.

  In the embodiment shown in FIGS. 1 and 2, the flow restriction device 138 includes a bottom 172 having a second opening 174 that passes through the bottom, and a conical side wall 176. A conical side wall extends from the supply tube side wall 154 inward and downward toward the bottom 172. The hydrodynamic nature of the flow restrictor 138 also allows the solid dopant 148 to pass through the second opening 174 while reducing or preventing the backflow of the gaseous dopant 132 through the second opening 174. In the embodiment shown in FIGS. 1 and 2, the conical side wall 176 passes through the second opening 174 and places the solid dopant 148 into the evaporation vessel 136. As the dopant 148 is evaporated in the evaporation vessel 136, the conical sidewall 176 directs the upwardly flowing gaseous dopant 132 away from the second opening 174, thereby limiting the backflow of the gaseous dopant 132. . In addition, the conical side wall 176 passes the second opening 174 (having a smaller cross-sectional area than the supply pipe 134) to guide the inert gas 152, and in the vicinity of the second opening 174. 152 local high pressure regions are created, thereby limiting the back flow of the gaseous dopant 132 through the second opening 174. Accordingly, the flow restrictor 138 reduces or eliminates the need for flowing an inert gas through the supply tube to prevent backflow of the gas dopant and / or to supply the gas dopant to the melt surface. As a result, the adverse effects associated with the use of inert gas flow in the gas doping system, i.e., dilution of the gas dopant concentration, and purge of gas dopants from the furnace too quickly are also reduced.

  As described above, in the embodiment shown in FIGS. 1 and 2, the flow restrictor 138 includes a bottom 172 having a second opening 174 passing through the bottom and a conical shape extending inwardly from the supply tube sidewall 154. A side wall 176. In alternative embodiments, the flow restrictor 138 may have any suitable configuration that enables the gas doping system 130 to function as described herein. In the embodiment shown in FIGS. 1 and 2, the flow restrictor 138 and the supply tube 134 are made from a single quartz glass. In other words, the flow restrictor 138 and the supply pipe 134 are of a one-piece construction (or one-piece construction). Integrating the flow restrictor in the supply tube can reduce the overall size of the gas doping system. This may facilitate positioning of the supply pipe and the flow restrictor in the furnace using a positioning system such as positioning system 142. In other embodiments, the flow restrictor and the supply tube may be made separately and may be made from any suitable material that allows the gas doping system 130 to function as described herein.

  With reference to FIG. 3, the gas doping system 130 includes a fluid-distribution plate 178 configured to distribute a gas dopant 132 across the melt surface 146. As shown in FIG. 3, the fluid distribution plate 178 is connected to the supply tube 134 at a second end 180 distal from the first end 150. In the embodiment shown in FIG. 3, the fluid distribution plate has a hemispherical shape. In alternative embodiments, the fluid distribution plate has a conical shape, a rectangular shape, a square shape, or any other suitable shape that allows the gas doping system 130 to function as described herein. Good.

As mentioned above, the gas doping system of the present disclosure provides an improvement over known doping systems. The gas doping system improves doping efficiency by preventing backflow of gas dopants and reducing the need for an inert gas flow to supply the gas dopant to the melt surface. By reducing the need for an inert gas flow, the gas doping system can cause adverse effects associated with the use of an inert gas flow in the gas doping system, i.e. dilution of the gas dopant concentration, and the gas dopant is purged from the furnace too quickly. To be reduced. The gas doping system of the present disclosure increases doping efficiency by allowing continuous and / or intermittent solid dopant supply to the evaporation vessel during the crystal growth process. By continuously or intermittently supplying solid dopant to the evaporation vessel, a relatively constant gas dopant concentration can be maintained in the furnace during the crystal growth process. The gas doping system of the present disclosure provides doping by providing an angled supply tube, an angled opening and / or a fluid distribution plate at the end of the supply tube where gas dopant exits the supply tube. Increase efficiency. By providing angled supply tubes, angled openings and / or fluid distribution plates, the distribution of gaseous dopants across the melt surface can be optimized for a given amount of dopant. Allows the highest doping of the melt. For example, the system of the present disclosure may allow the growth of highly doped crystals with an arsenic or phosphorus concentration as high as 10 ¹⁹ to 10 ²⁰ atoms / cm ³ .

  When introducing elements of the present invention or embodiments thereof, the articles “a”, “an”, “the” and “said” may include one or more elements. Is meant to mean that exists. The terms “comprising”, “including” and “having” are intended to be inclusive and mean that there may be additional elements other than the listed elements. The

  Since various changes may be made in the above structure or method without departing from the scope of the invention, all matter contained in the above or shown in the accompanying drawings shall be construed as illustrative. It is not intended to be construed in a limiting sense.

Since various changes may be made in the above structure or method without departing from the scope of the invention, all matter contained in the above or shown in the accompanying drawings shall be construed as illustrative. It is not intended to be construed in a limiting sense.

The disclosure of the present invention includes the following aspects.
Aspect 1:
A furnace including a crucible for holding a melt of semiconductor grade material or solar grade material;
A gas doping system for introducing a dopant into the furnace,
A supply pipe positioned in the furnace, wherein at least one supply pipe side wall, a first end through which a solid dopant introduced into the supply pipe passes, and a gaseous dopant introduced into the furnace are provided. A supply pipe including an opening opposite to the first end passing therethrough;
An evaporation vessel configured to evaporate the dopant therein and disposed near the opening of the supply pipe;
A flow restriction device, configured to allow movement of solid dopants through the flow restriction device and to restrict the flow of gaseous dopants through the flow restriction device, and in the supply pipe, A flow restrictor disposed between the first end and the evaporation vessel;
A gas doping system comprising:
A crystal pulling device for manufacturing a semiconductor grade ingot or a solar grade ingot.

Aspect 2:
Aspect 1 wherein the flow restriction device includes a bottom portion having a second opening that passes through the bottom portion, and a second side wall extending inward from the supply pipe side wall toward the bottom portion. The crystal pulling apparatus according to 1.

Aspect 3:
The aspect wherein the flow restrictor is configured to allow solid dopants to move through the second opening and restrict the flow of gaseous dopants through the second opening. 2. The crystal pulling apparatus according to 2.

Aspect 4:
The crystal pulling apparatus according to aspect 2, wherein the second side wall includes a conical portion.

Aspect 5:
The crystal pulling apparatus according to aspect 1, wherein the evaporation container includes a bottom surface extending inward from a supply pipe side wall, and a container side wall adjacent to the bottom surface and extending upward from the bottom surface.

Aspect 6:
6. The crystal pulling apparatus according to aspect 5, wherein the gas doping system further comprises a fluid flow passage defined at least in part by the vessel sidewall and the supply tube sidewall.

Aspect 7:
The crystal pulling apparatus according to aspect 1, wherein the supply pipe is connected in communication with a dopant supply apparatus configured to supply a solid dopant into the supply pipe.

Aspect 8:
The crystal pulling apparatus according to aspect 1, wherein the supply pipe is connected in communication with an automatic dopant supply apparatus configured to automatically supply a solid dopant into the supply pipe.

Aspect 9:
The crystal pulling apparatus according to aspect 1, wherein the gas doping system further comprises a fluid distribution plate connected to the supply tube at a second end distal from the first end.

Aspect 10:
The crystal pulling apparatus according to aspect 1, wherein the supply pipe is slidably connected to a positioning system configured to raise and lower the supply pipe.

Aspect 11:
The crystal pulling apparatus according to aspect 1, wherein the opening of the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the longitudinal axis of the supply tube.

Aspect 12:
The crystal pulling apparatus according to aspect 1, wherein the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the surface of the melt.

Aspect 13:
The crystal pulling apparatus according to aspect 1, wherein the evaporation container is positioned sufficiently close to the melt so that radiant heat from the melt is sufficient to evaporate the dopant in the evaporation container.

Aspect 14:
The crystal pulling apparatus according to aspect 1, wherein the evaporation container is positioned between about 1 cm and about 15 cm above the surface of the melt.

Aspect 15:
The crystal pulling apparatus according to aspect 1, wherein the supply pipe is connected in communication with an inert gas supply unit.

Aspect 16:
A method for using the crystal pulling apparatus according to aspect 15,
Introducing a dopant through the first end of the supply tube;
Evaporating the dopant in the evaporation vessel;
Flowing an inert gas through the supply pipe at a flow rate less than about 10 normal liters / min;
Including a method.

Aspect 17:
A furnace including a crucible for holding a melt of semiconductor grade material or solar grade material;
A gas doping system for introducing a dopant into the furnace,
A supply pipe positioned in the furnace, wherein at least one supply pipe side wall, a first end through which a solid dopant introduced into the supply pipe passes, and a gaseous dopant introduced into the furnace are provided. A supply pipe including an opening opposite to the first end passing therethrough;
Configured to evaporate the dopant therein, disposed near the opening of the supply pipe,
A bottom surface extending inwardly from the supply pipe side wall;
A container side wall adjacent to the bottom surface and extending upward from the bottom surface;
An evaporation vessel containing
A fluid flow passage defined at least in part by the container sidewall and the supply tube sidewall;
A gas doping system comprising:
A crystal pulling device for manufacturing a semiconductor grade ingot or a solar grade ingot.

Aspect 18:
A gas doping system is a flow restriction device configured to allow movement of solid dopant through the flow restriction device and to restrict the flow of gas dopant through the flow restriction device; The pulling device according to aspect 17, further comprising a flow restricting device disposed between the first end and the evaporation container in the supply pipe.

Aspect 19:
Aspect 18 wherein the flow restrictor includes a bottom portion having a second opening that passes through the bottom portion, and a second side wall extending inward from the supply pipe side wall toward the bottom portion. The crystal pulling apparatus according to 1.

Aspect 20:
The aspect wherein the flow restrictor is configured to allow solid dopants to move through the second opening and restrict the flow of gaseous dopants through the second opening. 19. The crystal pulling apparatus according to 19.

Aspect 21:
The crystal pulling device according to aspect 19, wherein the second side wall includes a conical portion.

Aspect 22:
The crystal pulling apparatus according to aspect 17, wherein the supply pipe is connected in communication with a dopant supply apparatus configured to supply a solid dopant into the supply pipe.

Aspect 23:
The crystal pulling apparatus according to aspect 17, wherein the supply pipe is communicatively coupled to an automatic dopant supply apparatus configured to automatically supply solid dopant into the supply pipe.

Aspect 24:
The crystal pulling apparatus according to aspect 17, wherein the gas doping system further comprises a fluid distribution plate connected to the supply tube at a second end distal from the first end.

Aspect 25:
The crystal pulling apparatus according to aspect 17, wherein the supply pipe is slidably connected to a positioning system configured to raise and lower the supply pipe.

Aspect 26:
The crystal pulling apparatus according to aspect 17, wherein the opening of the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the longitudinal axis of the supply tube.

Aspect 27:
The crystal pulling apparatus according to aspect 17, wherein the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the surface of the melt.

Aspect 28:
The crystal pulling apparatus according to aspect 17, wherein the evaporation container is positioned sufficiently near the melt so that radiant heat from the melt is sufficient to evaporate the dopant in the evaporation container.

Aspect 29:
The crystal pulling apparatus according to aspect 17, wherein the evaporation container is positioned between about 1 cm and about 15 cm above the surface of the melt.

Claims (29)

A furnace including a crucible for holding a melt of semiconductor grade material or solar grade material;
A gas doping system for introducing a dopant into the furnace,
A supply pipe positioned in the furnace, wherein at least one supply pipe side wall, a first end through which a solid dopant introduced into the supply pipe passes, and a gaseous dopant introduced into the furnace are provided. A supply pipe including an opening opposite to the first end passing therethrough;
An evaporation vessel configured to evaporate the dopant therein and disposed near the opening of the supply pipe;
A flow restriction device, configured to allow movement of solid dopants through the flow restriction device and to restrict the flow of gaseous dopants through the flow restriction device, and in the supply pipe, A flow restrictor disposed between the first end and the evaporation vessel;
A gas doping system comprising:
A crystal pulling device for manufacturing a semiconductor grade ingot or a solar grade ingot.   The flow restriction device includes a bottom portion having a second opening that passes through the bottom portion, and a second side wall that extends inwardly from a supply pipe side wall toward the bottom portion. 2. The crystal pulling apparatus according to 1.   The flow restrictor is configured to allow a solid dopant to move through the second opening and to restrict a flow of gaseous dopant through the second opening. Item 3. The crystal pulling apparatus according to Item 2.   The crystal pulling apparatus according to claim 2, wherein the second side wall includes a conical portion.   The crystal pulling apparatus according to claim 1, wherein the evaporation container includes a bottom surface extending inward from a supply pipe side wall, and a container side wall adjacent to the bottom surface and extending upward from the bottom surface.   The crystal pulling apparatus according to claim 5, wherein the gas doping system further comprises a fluid flow passage defined at least in part by the container sidewall and the supply tube sidewall.   The crystal pulling apparatus according to claim 1, wherein the supply pipe is communicatively coupled to a dopant supply apparatus configured to supply solid dopant into the supply pipe.   The crystal pulling device of claim 1, wherein the supply tube is communicatively coupled to an automatic dopant supply device configured to automatically supply solid dopant into the supply tube.   The crystal pulling device of claim 1, wherein the gas doping system further comprises a fluid distribution plate connected to the supply tube at a second end distal from the first end.   The crystal pulling device of claim 1, wherein the supply tube is slidably coupled to a positioning system configured to raise and lower the supply tube.   The crystal pulling apparatus of claim 1, wherein the opening of the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to a longitudinal axis of the supply tube.   The crystal pulling apparatus of claim 1, wherein the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the surface of the melt.   The crystal pulling apparatus according to claim 1, wherein the evaporation container is positioned sufficiently near the melt so that radiant heat from the melt is sufficient to evaporate the dopant in the evaporation container. .   The crystal pulling apparatus according to claim 1, wherein the evaporation vessel is positioned between about 1 cm and about 15 cm above the surface of the melt.   The crystal pulling apparatus according to claim 1, wherein the supply pipe is connected in communication with an inert gas supply unit. A method for using the crystal pulling apparatus according to claim 15,
Introducing a dopant through the first end of the supply tube;
Evaporating the dopant in the evaporation vessel;
Flowing an inert gas through the supply pipe at a flow rate less than about 10 normal liters / min;
Including a method. A furnace including a crucible for holding a melt of semiconductor grade material or solar grade material;
A gas doping system for introducing a dopant into the furnace,
A supply pipe positioned in the furnace, wherein at least one supply pipe side wall, a first end through which a solid dopant introduced into the supply pipe passes, and a gaseous dopant introduced into the furnace are provided. A supply pipe including an opening opposite to the first end passing therethrough;
Configured to evaporate the dopant therein, disposed near the opening of the supply pipe,
A bottom surface extending inwardly from the supply pipe side wall;
A container side wall adjacent to the bottom surface and extending upward from the bottom surface;
An evaporation vessel containing
A fluid flow passage defined at least in part by the container sidewall and the supply tube sidewall;
A gas doping system comprising:
A crystal pulling device for manufacturing a semiconductor grade ingot or a solar grade ingot.   A gas doping system is a flow restriction device configured to allow movement of solid dopant through the flow restriction device and to restrict the flow of gas dopant through the flow restriction device; 18. The pulling device according to claim 17, further comprising a flow restricting device disposed between the first end and the evaporation container in the supply pipe.   The flow restriction device includes a bottom portion having a second opening that passes through the bottom portion, and a second side wall that extends inwardly from a supply pipe side wall toward the bottom portion. The crystal pulling apparatus according to 18.   The flow restrictor is configured to allow a solid dopant to move through the second opening and to restrict a flow of gaseous dopant through the second opening. Item 20. The crystal pulling apparatus according to Item 19.   20. The crystal pulling apparatus according to claim 19, wherein the second side wall includes a conical portion.   The crystal pulling apparatus according to claim 17, wherein the supply pipe is communicatively coupled to a dopant supply apparatus configured to supply solid dopant into the supply pipe.   The crystal pulling device of claim 17, wherein the supply tube is communicatively coupled to an automatic dopant supply device configured to automatically supply solid dopant into the supply tube.   The crystal pulling device of claim 17, wherein the gas doping system further comprises a fluid distribution plate connected to the supply tube at a second end distal from the first end.   The crystal pulling device of claim 17, wherein the supply tube is slidably connected to a positioning system configured to raise and lower the supply tube.   The crystal pulling apparatus of claim 17, wherein the opening of the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the longitudinal axis of the supply tube.   The crystal pulling apparatus of claim 17, wherein the supply tube is angled at an angle between about 45 ° and about 75 ° with respect to the surface of the melt.   18. The crystal pulling apparatus according to claim 17, wherein the evaporating vessel is positioned sufficiently close to the melt so that radiant heat from the melt is sufficient to evaporate the dopant in the evaporating vessel. .   The crystal pulling apparatus according to claim 14, wherein the evaporation container is positioned between about 1 cm and about 15 cm above the surface of the melt.

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