JP2018006671A - Substrate for semiconductor device, semiconductor device, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor device, a semiconductor device, and a method of manufacturing a semiconductor device that can achieve an element structure suitable for mass production while suppressing deterioration in characteristics of a semiconductor element.SOLUTION: This substrate for a semiconductor device comprises: a substrate; and a lamination film formed on the substrate, and that includes an electric field shield layer containing an oxide semiconductor, and a hydrogen-containing layer that is a hydrogen supply source to the electric field shield layer.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a substrate (a substrate for a semiconductor device) for a semiconductor device including a semiconductor element, a semiconductor device, and a method for manufacturing the semiconductor device.

  In recent years, techniques for improving characteristics of thin film transistors (TFTs) used for electronic devices in various fields have been proposed (for example, Patent Document 1).

JP 2013-236068 A

  A semiconductor element such as the above-described thin film transistor is formed over a substrate, but is easily affected by static electricity from the back surface of the substrate due to the manufacturing process and the like. Since this leads to deterioration of the characteristics of the semiconductor element, improvement is desired. In addition, it is desirable to realize an element structure suitable for mass production by reducing the load on the manufacturing process.

  It is desirable to provide a semiconductor device substrate, a semiconductor device, and a semiconductor device manufacturing method capable of realizing an element structure suitable for mass production while suppressing characteristic deterioration of the semiconductor element.

  A substrate for a semiconductor device according to an embodiment of the present disclosure includes a substrate, an electric field shielding layer that is formed on the substrate and includes an oxide semiconductor, and a hydrogen-containing layer that is a hydrogen supply source to the electric field shielding layer. And a laminated film containing.

  A semiconductor device according to an embodiment of the present disclosure includes a substrate, an electric field shielding layer that is formed on the substrate and includes an oxide semiconductor, and a hydrogen-containing layer that is a hydrogen supply source to the electric field shielding layer A film and a semiconductor element formed on the laminated film via an insulating film are provided.

  According to an embodiment of the present disclosure, there is provided a method for manufacturing a semiconductor device, in which a stacked film including an electric field shielding layer including an oxide semiconductor and a hydrogen-containing layer that is a hydrogen supply source to the electric field shielding layer is formed on a substrate. A semiconductor element is formed on the laminated film via an insulating film.

  In a substrate for a semiconductor device according to an embodiment of the present disclosure, a semiconductor element having a stacked film including an electric field shielding layer including an oxide semiconductor on the substrate is used in a semiconductor device including a semiconductor element. In this case, the influence of static electricity from the back surface of the substrate is suppressed. When the stacked film includes the electric field shielding layer and the hydrogen-containing layer as a hydrogen supply source, the electrical resistance of the oxide semiconductor can be easily controlled in the manufacturing process.

  In a semiconductor device according to an embodiment of the present disclosure, a semiconductor device is formed on a substrate including a stacked film including an electric field shielding layer including an oxide semiconductor with an insulating film interposed therebetween. In the semiconductor element, the influence of static electricity from the back surface of the substrate is suppressed. When the stacked film includes the electric field shielding layer and the hydrogen-containing layer as a hydrogen supply source, the electrical resistance of the oxide semiconductor can be easily controlled in the manufacturing process.

  In the method for manufacturing a semiconductor device according to an embodiment of the present disclosure, a stacked film including an electric field shielding layer including an oxide semiconductor is formed on a substrate, and a semiconductor element is formed over the stacked film via an insulating film. Thus, in the semiconductor element, the influence of static electricity from the back surface of the substrate is suppressed. By forming the stacked film including the electric field shielding layer and the hydrogen-containing layer as a hydrogen supply source, the electrical resistance of the oxide semiconductor can be easily controlled in the manufacturing process.

  According to a semiconductor device substrate, a semiconductor device, and a method of manufacturing a semiconductor device according to an embodiment of the present disclosure, a stack including an electric field shielding layer including an oxide semiconductor and a hydrogen-containing layer as a hydrogen supply source on the substrate. A film is formed. By forming the semiconductor element on the laminated film via the insulating film, the semiconductor element can suppress the influence of static electricity from the back surface of the substrate and suppress characteristic deterioration. In the manufacturing process, the electrical resistance of the oxide semiconductor can be easily controlled. For this reason, in an oxide semiconductor, for example, a high resistance state is maintained until a thin film process that may cause abnormal discharge is completed, and the resistance is lowered after such a thin film process to function as an electric field shielding layer. Can do. Therefore, it is possible to realize an element structure suitable for mass production while suppressing deterioration of characteristics of the semiconductor element.

  The above content is an example of the present disclosure. The effects of the present disclosure are not limited to those described above, and may be other different effects or may include other effects.

It is sectional drawing showing schematic structure of the display apparatus which concerns on one embodiment of this indication. It is a cross-sectional schematic diagram showing 1 process of the manufacturing method of the display apparatus shown in FIG. It is a characteristic view showing the relationship between the oxygen partial pressure at the time of high resistance film formation and an electrical resistivity. FIG. 3 is a schematic cross-sectional view illustrating a process following FIG. 2. FIG. 5 is a schematic cross-sectional view illustrating a process following FIG. 4. FIG. 6 is a schematic cross-sectional view illustrating a process following FIG. 5. It is a cross-sectional schematic diagram showing the process following FIG. 6A. It is a cross-sectional schematic diagram showing the process of following FIG. 6B. It is a schematic diagram for demonstrating the metal thin film affixed on a board | substrate back surface. It is a schematic diagram for demonstrating the metal thin film affixed on a board | substrate back surface. 10 is a schematic cross-sectional view illustrating a configuration and an operation of a semiconductor device according to Comparative Example 1. FIG. FIG. 2 is a schematic cross-sectional view illustrating the configuration and operation of the semiconductor device illustrated in FIG. 1. 6 is a schematic diagram for explaining a thin film process of a semiconductor device according to Comparative Example 2. FIG. It is a schematic diagram for demonstrating the thin film process of the semiconductor device shown in FIG. 11 is a schematic cross-sectional view for explaining one step of the method for manufacturing a semiconductor device according to Modification 1. FIG. 10 is a schematic cross-sectional view illustrating a configuration of a semiconductor device substrate according to Modification 2. FIG. It is a cross-sectional schematic diagram for demonstrating an example of the thin film process using the board | substrate for semiconductor devices shown in FIG. FIG. 12 is a schematic cross-sectional view illustrating a configuration of a main part of a semiconductor device substrate according to Modification 3-1. It is a cross-sectional schematic diagram showing the principal part structure of the board | substrate for semiconductor devices which concerns on modification 3-2. FIG. 2 is a block diagram illustrating a functional configuration of the display device illustrated in FIG. 1. It is a block diagram showing the functional structure of an imaging device. It is a cross-sectional schematic diagram showing the structure of another semiconductor device.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be given in the following order.

1. Embodiments (Example of Semiconductor Device Substrate in Which Laminated Film Containing Electric Field Shielding Layer and Hydrogen-Containing Layer is Formed on Substrate, and Semiconductor Device and Display Device Having This Semiconductor Device Substrate)
2. Modification Example 1 (Example in which the resistance of an oxide semiconductor is reduced in a thin film transistor formation process or a heat treatment after formation)
3. Modification 2 (example in which an organic insulating film is formed between a laminated film and an inorganic insulating film)
4). Modified examples 3-1 and 3-2 (other examples of laminated films)
5. Examples of imaging devices

<Embodiment>
[Constitution]
FIG. 1 schematically illustrates a cross-sectional configuration of a display device (display device 1) according to an embodiment of the present disclosure. The display device 1 is an organic electroluminescence (EL) device, for example, and includes a display element layer 20 and a counter substrate 30 on a semiconductor device 10. The semiconductor device 10 has a laminated film 40 including, for example, a hydrogen-containing layer 12 and an electric field shielding layer 13, an insulating film 14, and a TFT layer 15 in this order on a substrate 11. The substrate 11 and the laminated film 40, or the substrate 11, the laminated film 40, and the insulating film 14 (semiconductor device substrate 10A) correspond to a specific example of “a semiconductor device substrate” of the present disclosure.

  The substrate 11 is, for example, a flexible substrate (a flexible substrate). Examples of the constituent material of the substrate 11 include resin materials such as PI (polyimide), PET (polyethylene terephthalate), PC (polycarbonate), and PEN (polyethylene naphthalate). Other examples include polyamide, SOG (spin-on-glass), polyethersulfone (PES), and the like. Moreover, not only a resin material but what formed the insulating material into the metal thin film, such as stainless steel (SUS), may be used. Or the board | substrate 11 may be comprised from rigid materials, such as glass, for example. When the substrate 11 is made of a flexible substrate such as a resin material, a metal thin film (a metal thin film 50 described later) may be bonded to the back surface of the substrate 11.

  The laminated film 40 includes, for example, the hydrogen-containing layer 12 and the electric field shielding layer 13 in order from the substrate 11 side. The hydrogen-containing layer 12 and the electric field shielding layer 13 are desirably formed in contact with each other. In the manufacturing process described later, hydrogen is supplied (diffused) from the hydrogen-containing layer 12 to the oxide semiconductor (high resistance film 13a), whereby the resistance of the high resistance film 13a is reduced and the electric field shielding layer 13 is formed. Because. The hydrogen-containing layer 12 and the electric field shielding layer 13 are preferably in contact with each other, but other layers may be interposed between the hydrogen-containing layer 12 and the electric field shielding layer 13. However, when other layers are present, it is desirable that the layer does not hinder hydrogen diffusion from the hydrogen-containing layer 12 to the electric field shielding layer 13 and does not have conductivity.

  The hydrogen-containing layer 12 functions as a hydrogen supply source for the electric field shielding layer 13 (specifically, a high-resistance film 13a made of an oxide semiconductor described later). The hydrogen-containing layer 12 is configured to contain, for example, nitride or amorphous silicon (a-Si). Examples of the nitride include silicon nitride such as SiN, silicon oxynitride such as SiON, and the like. Although the thickness of the hydrogen containing layer 12 is not specifically limited, For example, it is 30 nm or more and 1000 nm or less.

  The electric field shielding layer 13 includes an oxide semiconductor. The oxide semiconductor mainly includes an oxide of at least one element selected from, for example, indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). It is included as a component. As an example of such an oxide semiconductor, for example, indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), Examples thereof include indium tin oxide (ITO) and indium oxide (InO).

  The electric resistivity of the electric field shielding layer 13 is, for example, 1 [Ω · cm (ohm centimeter)] or less, and preferably 0.001 [Ω · cm] or less. However, it is not necessarily limited to this range, and the electric field shielding layer 13 only needs to have conductivity that can suppress the influence of static electricity from the back surface of the substrate 11. The electrical resistance of the oxide semiconductor that constitutes the electric field shielding layer 13 can be controlled in a manufacturing process described later. The electric field shielding layer 13 is held at, for example, a fixed potential (a fixed potential is supplied to the electric field shielding layer 13).

  The electric field shielding layer 13 may be formed only in a selective region of the substrate 11 (may be patterned), but is preferably formed over the entire region of the substrate 11, for example. This is because a sufficient shielding effect can be expected and it can function as a moisture barrier. Further, as compared with the case of patterning, the number of processing steps by photolithography can be reduced, and the manufacturing process can be simplified. Although the thickness of this electric field shielding layer 13 is not specifically limited, For example, it can be 10 nm or more. This is because it is easy to ensure sufficient conductivity to suppress the influence of static electricity.

The insulating film 14 includes, for example, an inorganic insulating film. Examples of the inorganic insulating film include at least one selected from silicon oxide (SiO _x ), silicon nitride, silicon oxynitride, SiO doped with phosphorus (P), and aluminum oxide (Al ₂ O ₃ ). It is a single layer film or a laminated film.

  The TFT layer 15 is a layer including a semiconductor element such as a thin film transistor (TFT 15a). The TFT 15 a is, for example, a top-gate thin film transistor, and has a semiconductor layer 151 a in a selective region on the insulating film 14. A gate electrode 153a is formed on the semiconductor layer 151a with a gate insulating film 152 interposed therebetween. An interlayer insulating film 154 is provided so as to cover the semiconductor layer 151a, the gate insulating film 152, and the gate electrode 153a. A contact hole H1 is provided in the interlayer insulating film 154 so as to face a part of the semiconductor layer 151a. On the interlayer insulating film 154, a source / drain electrode 155a is formed so as to fill the contact hole H1, and a planarizing film 156 is formed covering the interlayer insulating film 154 and the source / drain electrode 155a. Yes. The TFT 15a corresponds to a specific example of “semiconductor element” of the present disclosure.

  The semiconductor layer 151 a is patterned on the insulating film 14. The semiconductor layer 151a includes a channel region (active layer) in a region facing the gate electrode 153a. The semiconductor layer 151a is mainly made of an oxide of at least one element selected from, for example, indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). An oxide semiconductor is included as a component. Specifically, indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO) and Examples thereof include indium oxide (InO). Alternatively, the semiconductor layer 151a may be composed of low-temperature polycrystalline silicon (LTPS), amorphous silicon (a-Si), or the like.

The gate insulating film 152 is, for example, a single layer film made of one of silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide (AlO _x ), or a laminated film made of two or more of them. It is composed of

  The gate electrode 153a controls the carrier density in the semiconductor layer 151a by the applied gate voltage (Vg) and has a function as a wiring for supplying a potential. The constituent material of the gate electrode 153a is, for example, titanium (Ti), tungsten (W), tantalum (Ta), aluminum (Al), molybdenum (Mo), silver (Ag), neodymium (Nd), and copper (Cu). The simple substance and alloy containing 1 type of these are mentioned. Alternatively, it may be a compound film containing at least one of them and a laminated film containing two or more kinds. For example, a transparent conductive film such as ITO may be used.

  The interlayer insulating film 154 is made of, for example, an organic material such as acrylic resin, polyimide (PI), or novolac resin. Alternatively, the interlayer insulating film 154 may be made of an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide.

  The source / drain electrode 155a functions as the source or drain of the TFT 15a, and includes, for example, the same metal or transparent conductive film as listed as the constituent material of the gate electrode 153a. As the source / drain electrode 155a, it is desirable to select a material having good electrical conductivity.

  The planarization film 156 is made of, for example, an organic material such as acrylic resin, polyimide (PI), or novolac resin.

  In addition to the TFT 15a, for example, a capacitive element 15b is formed in the TFT layer 15. The capacitive element 15b has, for example, a lower electrode layer 151b, a gate insulating film 152, and an upper electrode layer 153b in this order on the semiconductor device substrate 10A. The lower electrode layer 151b is formed, for example, in the same layer as the semiconductor layer 151a of the TFT 15a and including the same oxide semiconductor. The lower electrode layer 151b is electrically connected to, for example, the source / drain electrode 155b. The upper electrode layer 153b is formed, for example, in the same layer as the gate electrode 153a of the TFT 15a and including the same conductive material.

  The display element layer 20 includes a plurality of pixels, and also includes a display element (light emitting element) that is driven for display (light emission driving) using the semiconductor device 10 including the TFT 15a as a backplane. In this example, for example, an organic EL element 21 is included as a display element. The organic EL element 21 includes, for example, an anode electrode 210, an organic electroluminescent layer 212, and a cathode electrode 213 in order from the TFT layer 15 side. An insulating film 211 is formed in a region between the pixels, and the anode electrode 210 and the organic electroluminescent layer 212 are electrically separated for each pixel. The anode electrode 210 is connected to, for example, a source / drain electrode 155a of the TFT 15a through a contact hole (not shown). A sealing layer 22 is formed on the organic EL element 21. A counter substrate 30 is bonded onto the sealing layer 22.

  The counter substrate 30 is made of a light transmissive material among the flexible materials similar to the substrate 11. A color filter, a black matrix, or the like may be formed on the counter substrate 30 as necessary.

[Production method]
The display device 1 as described above can be manufactured, for example, as follows. 2 to 7 show the manufacturing process of the display device 1 in the order of steps.

  First, as shown in FIG. 2, a support substrate 300 made of glass or the like is bonded to the back surface of a substrate 11 made of, for example, a flexible substrate, and then the above-described material (for example, SiN) is included on the substrate 11. A hydrogen-containing layer 12 is formed. Examples of the forming method include a CVD method such as plasma CVD (plasma-enhanced chemical vapor deposition; PECVD). Subsequently, the high resistance film 13a including the above-described oxide semiconductor is formed on the hydrogen-containing layer 12 by, for example, a sputtering method.

The electrical resistivity of the high resistance film 13a is, for example, 0.01 [Ω · cm] or more, preferably 1 [Ω · cm] or more. The high resistance film 13a can be formed by controlling various conditions during the formation of the oxide semiconductor. Specifically, the resistance value of the high resistance film 13a can be controlled by controlling the oxygen (O ₂ ) partial pressure. An example is shown in FIG. Thus, for example, when the sputtering pressure is 0.5 pa and the oxygen partial pressure is 1% or more, a high resistance film of 1 Ω · cm or more can be formed. On the other hand, when the oxygen partial pressure is 0.5% or less, a low resistance film of 0.001 Ω · cm or less is formed. However, this is only an example, and the electrical resistivity of the high-resistance film 13a to be formed varies depending on various conditions such as output (power) of the film forming apparatus.

  Thereafter, as shown in FIG. 4, the insulating film 14 is formed by a CVD method such as plasma CVD.

  Subsequently, as shown in FIG. 5, the resistance of the high resistance film 13a is reduced. Specifically, by performing heat treatment, hydrogen contained in the hydrogen-containing layer 12 is supplied (diffused) to the high-resistance film 13a, so that the resistance of the high-resistance film 13a is reduced. As an example, by performing heat treatment (nitrogen annealing) at 300 ° C. for 1 hour in a nitrogen atmosphere, the resistance of the high resistance film 13a of 12.25 Ω · cm, for example, can be reduced to 0.87 Ω · cm. Further, the same nitrogen annealing can reduce the resistance of the high resistance film 13a of 1.68 Ω · cm to 0.1 Ω · cm, for example. Thereby, the electric field shielding layer 13 is formed.

  Next, as shown in FIG. 6A, the TFT layer 15 is formed using a known thin film process. As an example, the TFT 15a and the capacitor 15b shown in FIG. 1 are formed.

  Subsequently, as shown in FIG. 6B, the display element layer 20 is formed. As an example, the organic EL element 21 shown in FIG. 1 is formed. Thereafter, the counter substrate 30 is bonded onto the display element layer 20.

  Next, as shown in FIG. 7, the support substrate 300 is peeled off. Specifically, the substrate 11 is peeled off from the support substrate 300 using a roller or the like. At this time, although details will be described later, static electricity X1 is generated between the substrate 11 and the support substrate 300.

  When the substrate 11 is a flexible substrate, the metal thin film 50 is bonded to the back surface of the substrate 11 after the support substrate 300 is peeled off. Here, when preparing the metal thin film 50, first, as shown in FIG. 8A, the protective film 51 adhered to the surface of the metal thin film 50 is peeled off. As a result, as schematically shown in FIG. 8B, the metal thin film 50 is charged, for example, along the direction corresponding to the direction in which the protective film 51 is peeled off (electrostatic X2 is generated). The metal thin film 50 is bonded to the back surface of the substrate 11 using, for example, a roller. The metal thin film 50 is bonded to the back side of the substrate 11 for the purpose of protecting and reinforcing the substrate 11 (flexible substrate). In the case where the substrate 11 is configured using a metal film or glass or the like, the metal thin film 50 may not be provided.

  Thus, the display device 1 shown in FIG. 1 is completed.

[Action and effect]
In the display device 1 of the present embodiment, the organic EL element 21 of each pixel is driven to emit light in the display element layer 20 by active matrix driving using the TFT 15a based on a video signal input from the outside. As a result, video display is performed.

  Here, FIG. 9 shows the configuration of the semiconductor device 100 according to Comparative Example 1 of the present embodiment. Similar to the semiconductor device 10 of the present embodiment, the semiconductor device 100 includes a top gate type TFT 15a and a capacitor element 15b formed on a substrate 101 made of a flexible substrate with an insulating film 102 interposed therebetween. It is a thing. The TFT 15a has a semiconductor layer 151a in a selective region on the insulating film 102, as in the semiconductor device 10 of the present embodiment.

  In the semiconductor device 100 of Comparative Example 1, static electricity X is generated on the back surface of the substrate 101, for example, when the support substrate is peeled off during the manufacturing process. In particular, in the top gate type TFT 15a, the semiconductor layer 151a is easily affected by the static electricity X, and the characteristics of the TFT 15a are easily deteriorated. In addition, the characteristics of the TFT 15a of each pixel vary over the entire display surface.

  On the other hand, in the semiconductor device 10 of the present embodiment, the stacked film 40 including the electric field shielding layer 13 including an oxide semiconductor and the hydrogen-containing layer 12 as a hydrogen supply source is formed on the substrate 11. A TFT 15a is provided on the laminated film 40 via an insulating film 14 (an electric field shielding layer 13 is provided between the substrate 11 and the TFT layer 15). As schematically illustrated in FIG. 10, the electric field shielding layer 13 suppresses the influence of static electricity X from the back surface of the substrate 11 in the TFT 15 a (semiconductor layer 151 a).

  For example, in the manufacturing process, as described above, static electricity X1 is generated when the support substrate 300 is peeled off (FIG. 7), and static electricity X2 is generated when the metal thin film 50 is bonded (FIG. 8B). In the present embodiment, the electric field shielding layer 13 prevents the electric charges due to the static electricity X (X1, X2) from reaching the semiconductor layer 511a. Thereby, characteristic deterioration of the TFT 15a can be suppressed.

  In addition, since the laminated film 40 includes the electric field shielding layer 13 and the hydrogen-containing layer 12 as a hydrogen supply source, the electric resistance of the oxide semiconductor constituting the electric field shielding layer 13 in the manufacturing process can be reduced. It becomes easy to control.

  For example, the oxide semiconductor constituting the electric field shielding layer 13 is kept in a high resistance state until a thin film process (for example, using a plasma, a CVD process, a sputtering process, or the like) that can cause an abnormal discharge is completed. Can do.

  Here, FIG. 11 schematically shows a thin film process (CVD process) of the semiconductor device according to Comparative Example 2. As described above, in the CVD process, for example, the film 401 is formed by generating the plasma 401 of the source gas in the film forming apparatus 400. For this reason, for example, when a conductive film 103 as an electric field shielding layer is formed on the substrate 11 and then an insulating film or the like is formed in the film forming apparatus 400, an abnormal state is generated between the plasma 401 and the conductive film 103. Discharge X3 can occur. This causes damage to the substrate 11 or damages the film forming apparatus 400, and is not suitable for mass production.

  On the other hand, in the present embodiment, the oxide semiconductor constituting the electric field shielding layer 13 is first formed as the high resistance film 13a on the hydrogen-containing layer 12 (FIG. 2), and thereafter, for example, the insulating film 14 Is formed using the CVD process as described above (FIG. 4). That is, the oxide semiconductor is kept in a high resistance state until the CVD process of the insulating film 14 is completed. Thereby, as schematically shown in FIG. 12, in the CVD process of the insulating film 14, the occurrence of the abnormal discharge as described above can be suppressed. Thus, in this embodiment, by providing the stacked film 40, the electrical resistance of the oxide semiconductor that forms the electric field shielding layer 13 can be controlled in the manufacturing process, and the occurrence of abnormal discharge can be suppressed. . Thereby, the load on the manufacturing process is reduced, and an element structure suitable for mass production can be realized.

  After the thin film process having an abnormal discharge risk as described above (for example, after the formation of the insulating film 14), for example, heat treatment is performed, so that the high resistance film 13a is reduced in resistance by hydrogen diffusion from the hydrogen-containing layer 12. (FIG. 5). With this reduction in resistance, the oxide semiconductor can function as the electric field shielding layer 13.

  There are also the following effects. That is, if a conductive film as an electric field shielding layer is formed (patterned) only in a selective region on the substrate 11, the occurrence of abnormal discharge is reduced, but the number of processing steps by photolithography increases. . In this embodiment, since the occurrence of abnormal discharge is suppressed as described above, the electric field shielding layer 13 can be formed over the entire area of the substrate 11 without patterning. For this reason, the number of processes can be reduced as compared with the case of patterning. In addition, the electric field shielding effect is enhanced as compared with the patterning, and the electric field shielding layer 13 can function well as a moisture barrier. Furthermore, since the insulating film 14 is formed on the flat electric field shielding layer 13 which is not patterned, the coverage of the insulating film 14 is improved and the barrier property can be further improved.

  As described above, in the present embodiment, the stacked film 40 including the electric field shielding layer 13 including an oxide semiconductor and the hydrogen-containing layer 12 as a hydrogen supply source is formed over the substrate 11. By forming the TFT 15a on the laminated film 40 via the insulating film 14, it is possible to suppress the influence of static electricity from the back surface of the substrate 11 and to suppress deterioration of characteristics in the TFT 15a. In addition, the stacked film 40 makes it easy to control the electrical resistance of the oxide semiconductor in the manufacturing process. Therefore, in an oxide semiconductor, for example, a high resistance state is maintained (formed as a high resistance film 13a) until a thin film process that can cause abnormal discharge is completed, and a low resistance is performed after such a thin film process. To function as the electric field shielding layer 13. Therefore, it is possible to realize an element structure suitable for mass production while suppressing deterioration of the characteristics of the TFT 15a.

  Next, modified examples of the semiconductor device and the semiconductor device substrate of the above embodiment will be described. Below, the same code | symbol is attached | subjected about the component similar to the display apparatus 1 of the said embodiment, and the description is abbreviate | omitted suitably.

<Modification 1>
FIG. 13 is a schematic cross-sectional view illustrating a step of the method of manufacturing a semiconductor device according to Modification 1. In the above embodiment, the low resistance treatment (heat treatment) of the high resistance film 13a is performed after the insulating film 14 is formed and before the TFT layer 15 is formed. Is not particularly limited as long as it is after the formation of the insulating film 14. For example, as in this modification, the process may be performed after the TFT layer 15 is formed or after the TFT layer 15 is formed. In forming the TFT layer 15, a thin film process involving heat treatment is performed. For this reason, in the heat treatment process for forming any one of the TFT layers 15, the resistance of the high resistance film 13a described above may be simultaneously reduced.

  As in this modification, the heat treatment for lowering the resistance of the high resistance film 13a may be combined with another thin film process. In this case, the same effect as the above embodiment can be obtained. it can. Further, in this modification, the number of steps can be reduced as compared with the above embodiment, and the manufacturing process can be simplified.

<Modification 2>
FIG. 14 is a schematic cross-sectional view illustrating a configuration of a semiconductor device substrate according to Modification 2. In the above embodiment, the insulating film 14 including the inorganic insulating film is formed on the stacked film 40, but the organic film 16 including the organic insulating film is interposed between the stacked film 40 and the insulating film 14. It may be. The organic film 16 includes an organic material such as polyimide or a siloxane compound.

  As in this modification, in the semiconductor device substrate, the insulating film 14 (inorganic insulating film) and the organic film 16 may be stacked on the stacked film 40. Thus, it is known that a structure in which inorganic materials (hydrogen-containing layer 12 and insulating film 14) and organic materials (organic film 16) are alternately laminated exhibits excellent moisture barrier performance. However, when the organic material (organic film 16) is directly formed on the inorganic material (for example, the hydrogen-containing layer 12 containing SiN) formed by CVD in order to improve the barrier performance, the organic material hardly adheres. As a result, the desired barrier performance may not be obtained. For this reason, in order to maintain good barrier performance, it is desirable to perform interface treatment or to form another adhesion layer. In this respect, in the present modification, the electric field shielding layer 13 is interposed between the hydrogen-containing layer 12 and the organic film 16. The electric field shielding layer 13 functions as an adhesion layer, can suppress peeling of the hydrogen-containing layer 12 and the organic film 16 (improves adhesion), and can maintain a good barrier performance.

  In this modification, an organic film 16 is formed on the electric field shielding layer 13, and an insulating film 14 is formed on the organic film 16 by, for example, a CVD method. Here, FIG. 15 schematically shows an example of a substrate for a semiconductor device installed in the film forming apparatus 400. In FIG. 15, only the configuration near the end portion (end portion of the support substrate 300) e of the semiconductor device substrate is shown. As described above, in the substrate for a semiconductor device of this modification, the substrate 11, the hydrogen-containing layer 12, the high resistance film 13 a, and the organic film 16 are formed in this order on the support substrate 300. Among these, the organic film 16 is formed on the high resistance film 13a by, for example, a coating method. In order to suppress adhesion to the film forming apparatus 400, the end e1 of the organic film 16 has an end portion e1. It is often formed inside the portion e. For this reason, a part (13a1) of the high resistance film 13a may be exposed from the organic film 16 into the film forming apparatus 400. If the conductive film is exposed from the organic film 16 during the CVD process of the insulating film 14, abnormal discharge may occur from the exposed portion. Therefore, until the insulating film 14 is formed, it is desirable that the oxide semiconductor is formed as the high resistance film 13a, thereby suppressing the occurrence of abnormal discharge and the manufacturing process as in the above embodiment. Can reduce the load.

<Modifications 3-1 and 3-2>
FIG. 16 illustrates a main configuration of a semiconductor device substrate according to Modification 3-1. FIG. 17 illustrates a main configuration of a semiconductor device substrate according to Modification 3-2. In the laminated film 40 of the above embodiment, the hydrogen-containing layer 12 and the electric field shielding layer 13 are formed in this order from the substrate 11 side, but the constituent elements, the number of laminated layers, the order of formation, and the like of the laminated film 40 are limited to this. Is not to be done.

  For example, as in Modification 3-1, the stacked film 40 may include the electric field shielding layer 13 and the hydrogen-containing layer 12 in this order from the substrate 11 side. Further, as in Modification 3-2, the stacked film 40 may include the electric field shielding layer 17, the hydrogen-containing layer 12, and the electric field shielding layer 13 in this order from the substrate 11 side. In other words, the electric field shielding layer 17 may be further formed between the hydrogen-containing layer 12 and the substrate 11. As with the electric field shielding layer 13, the electric field shielding layer 17 may be configured to include a low-resistance oxide semiconductor, or may be configured to include another metal material.

<Functional configuration example>
FIG. 18 illustrates a functional block configuration of the display device 1 described in the above embodiment.

  The display device 1 displays a video signal input from the outside or a video signal generated inside as a video, and is applied to, for example, a liquid crystal display in addition to the organic EL display described above. The display device 1 includes, for example, a timing control unit 120, a signal processing unit 121, a driving unit 122, and a display pixel unit 123.

  The timing control unit 120 includes a timing generator that generates various timing signals (control signals), and performs drive control of the signal processing unit 121 and the like based on these various timing signals. For example, the signal processing unit 121 performs predetermined correction on a digital video signal input from the outside, and outputs the video signal obtained thereby to the driving unit 122. The drive unit 122 includes, for example, a scanning line drive circuit and a signal line drive circuit, and drives each pixel of the display pixel unit 123 via various control lines. The display pixel unit 123 includes a display element (the display element layer 20 described above) such as an organic EL element or a liquid crystal display element, and a pixel circuit for driving the display element for each pixel. Among these, for example, the semiconductor device 10 including the above-described TFT 15a can be applied to a backplane including the signal processing unit 121, the driving unit 122, and the like.

<Application examples other than display devices>
In the above-described embodiment, the display device 1 is described as an example of application of the semiconductor device 10. However, the semiconductor device 10 described above is not limited to the display device 1, but may be an imaging device ( It may be used in an imaging device 2).

  The imaging device 2 is, for example, a solid-state imaging device that acquires an image as an electrical signal, and includes, for example, a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The imaging device 2 includes, for example, a timing control unit 130, a drive unit 131, an imaging pixel unit 132, and a signal processing unit 133.

  The timing control unit 130 includes a timing generator that generates various timing signals (control signals), and performs drive control of the driving unit 131 based on these various timing signals. The drive unit 131 includes, for example, a row selection circuit, an AD conversion circuit, a horizontal transfer scanning circuit, and the like, and performs driving for reading signals from each pixel of the imaging pixel unit 132 via various control lines. The imaging pixel unit 132 includes, for example, an imaging element (photoelectric conversion element) such as a photodiode and a pixel circuit for signal readout. The signal processing unit 133 performs various signal processing on the signal obtained from the imaging pixel unit 132. Among these, for example, the semiconductor device 10 including the TFT 15a described above can be applied to a backplane including the drive unit 131 and the signal processing unit 133.

  Although the embodiments and the like have been described above, the present disclosure is not limited to the embodiments and the like, and various modifications can be made. For example, the material and thickness of each layer described in the above embodiment and the like are not limited to those listed, and may be other materials and thicknesses. Further, the thin film transistor and the semiconductor device do not have to include all the layers described above, or may include other layers in addition to the above layers.

  In the above-described embodiment and the like, the semiconductor device 10 including the TFT 15a (TFT layer 15) is taken as an example. However, the semiconductor device of the present disclosure includes a semiconductor element 31 other than the TFT 15a as illustrated in FIG. It may be provided. For example, the semiconductor element 31 is formed on the substrate 11 via the insulating film 14 and the stacked film 40 including the hydrogen-containing layer 12 and the electric field shielding layer 13. As this semiconductor element 31, for example, various types of semiconductor elements having a semiconductor such as a photoelectric conversion element can be used. In any case, by providing the laminated film 40, the semiconductor element 31 has a semiconductor film 31 from the back surface of the substrate 11. It is possible to suppress the influence of static electricity and to suppress the characteristic variation of the semiconductor element 31.

  Furthermore, the effects described in the above embodiments and the like are examples, and the effects of the present disclosure may be other effects or may include other effects.

In addition, this indication can also take the following structures.
(1)
A substrate,
A semiconductor device substrate comprising: an electric field shielding layer including an oxide semiconductor formed on the substrate; and a stacked film including a hydrogen-containing layer which is a hydrogen supply source to the electric field shielding layer.
(2)
The electric resistivity of the electric field shielding layer is 1 Ω · cm or less. The semiconductor device substrate according to (1) above.
(3)
The substrate for a semiconductor device according to (1) or (2), wherein the electric field shielding layer is formed over the entire area of the substrate.
(4)
The substrate for a semiconductor device according to any one of (1) to (3), wherein the stacked film includes the hydrogen-containing layer and the electric field shielding layer in order from the substrate side.
(5)
The oxide semiconductor is an oxide containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). The substrate for a semiconductor device according to any one of (4) to (4).
(6)
The substrate for a semiconductor device according to any one of (1) to (5), wherein the hydrogen-containing layer includes nitride or amorphous silicon.
(7)
The substrate for a semiconductor device according to (6), wherein the nitride is silicon nitride or silicon oxynitride.
(8)
The substrate for a semiconductor device according to any one of (1) to (7), further including an inorganic insulating film on the stacked film.
(9)
The substrate for a semiconductor device according to (8), further including an organic insulating film between the stacked film and the inorganic insulating film.
(10)
The substrate has flexibility. The semiconductor device substrate according to any one of (1) to (9).
(11)
A substrate,
A multilayer film formed on the substrate and including an electric field shielding layer including an oxide semiconductor, and a hydrogen-containing layer serving as a hydrogen supply source to the electric field shielding layer;
A semiconductor device comprising: a semiconductor element formed on the laminated film via an insulating film.
(12)
The semiconductor device according to (11), wherein the semiconductor element is a thin film transistor.
(13)
The semiconductor device according to (11), further including a display element on the semiconductor element.
(14)
On the substrate, a laminated film including an electric field shielding layer containing an oxide semiconductor and a hydrogen-containing layer that is a hydrogen supply source to the electric field shielding layer is formed.
A method of manufacturing a semiconductor device, wherein a semiconductor element is formed on the laminated film via an insulating film.
(15)
Forming the hydrogen-containing layer;
Forming a high-resistance film containing the oxide semiconductor on the hydrogen-containing layer;
The method for manufacturing a semiconductor device according to (14), wherein after forming the insulating film, the electric field shielding layer is formed by reducing the resistance of the high-resistance film by supplying hydrogen from the hydrogen-containing layer.
(16)
The electrical resistivity of the high resistance film is 0.01 Ω · cm or more. The method for manufacturing a semiconductor device according to (15), wherein
(17)
Forming the semiconductor element using a thin film process including heat treatment;
The method for manufacturing a semiconductor device according to (15) or (16), wherein the resistance of the high-resistance film is reduced during the heat treatment.
(18)
The electric resistivity of the electric field shielding layer is 1 Ω · cm or less. The method for manufacturing a semiconductor device according to any one of (14) to (17).
(19)
The method for manufacturing a semiconductor device according to any one of (14) to (18), wherein the insulating film includes an inorganic insulating film and is formed by a plasma CVD (plasma-enhanced chemical vapor deposition) method.

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 10 ... Semiconductor device, 10A ... Semiconductor device substrate, 11 ... Substrate, 12 ... Hydrogen-containing layer, 13 ... Electric field shielding layer, 13a ... High resistance film, 14 ... Insulating film, 15 ... TFT layer, 15a DESCRIPTION OF SYMBOLS ... TFT, 15b ... Capacitance element, 16 ... Organic film, 20 ... Display element layer, 22 ... Sealing layer, 30 ... Opposite substrate, 40 ... Laminated film, 50 ... Metal thin film, 51 ... Protective film, 151a ... Semiconductor layer, 151b: lower electrode layer, 152 ... gate insulating film, 153a ... gate electrode, 153b ... upper electrode layer, 154 ... interlayer insulating film, 155a, 155b ... source / drain electrodes, 156 ... planarization film, 2 ... imaging device, 120 , 130 ... Timing control unit, 121, 133 ... Signal processing unit, 122, 131 ... Drive unit, 123 ... Display pixel unit, 132 ... Imaging pixel unit, 31 ... Semiconductor element, 300 ... Support substrate, H ... contact hole, e, e1 ... end.

Claims (19)

A substrate,
A semiconductor device substrate comprising: an electric field shielding layer including an oxide semiconductor formed on the substrate; and a stacked film including a hydrogen-containing layer which is a hydrogen supply source to the electric field shielding layer. The substrate for a semiconductor device according to claim 1, wherein an electric resistivity of the electric field shielding layer is 1 Ω · cm or less. The substrate for a semiconductor device according to claim 1, wherein the electric field shielding layer is formed over the entire area of the substrate. The substrate for a semiconductor device according to claim 1, wherein the stacked film includes the hydrogen-containing layer and the electric field shielding layer in order from the substrate side. 2. The oxide semiconductor is an oxide containing at least one of indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). A substrate for a semiconductor device according to 1. The substrate for a semiconductor device according to claim 1, wherein the hydrogen-containing layer includes nitride or amorphous silicon. The substrate for a semiconductor device according to claim 6, wherein the nitride is silicon nitride or silicon oxynitride. The substrate for a semiconductor device according to claim 1, further comprising an insulating film on the laminated film. The insulating film includes an inorganic insulating film,
The semiconductor device substrate according to claim 8, further comprising an organic insulating film between the stacked film and the insulating film. The substrate for a semiconductor device according to claim 1, wherein the substrate has flexibility. A substrate,
A multilayer film formed on the substrate and including an electric field shielding layer including an oxide semiconductor, and a hydrogen-containing layer serving as a hydrogen supply source to the electric field shielding layer;
A semiconductor device comprising: a semiconductor element formed on the laminated film via an insulating film. The semiconductor device according to claim 11, wherein the semiconductor element is a thin film transistor. The semiconductor device according to claim 11, further comprising a display element on the semiconductor element. On the substrate, a laminated film including an electric field shielding layer containing an oxide semiconductor and a hydrogen-containing layer that is a hydrogen supply source to the electric field shielding layer is formed.
A method of manufacturing a semiconductor device, wherein a semiconductor element is formed on the laminated film via an insulating film. After forming the hydrogen-containing layer, forming a high resistance film containing the oxide semiconductor,
The method for manufacturing a semiconductor device according to claim 14, wherein after forming the insulating film, the electric field shielding layer is formed by reducing the resistance of the high-resistance film by supplying hydrogen from the hydrogen-containing layer. The method of manufacturing a semiconductor device according to claim 15, wherein an electric resistivity of the high resistance film is 0.01 Ω · cm or more. Forming the semiconductor element using a thin film process including heat treatment;
The method for manufacturing a semiconductor device according to claim 15, wherein the resistance of the high-resistance film is reduced during the heat treatment. The method of manufacturing a semiconductor device according to claim 14, wherein the electric field shielding layer has an electrical resistivity of 1 Ω · cm or less. The method of manufacturing a semiconductor device according to claim 14, wherein the insulating film includes an inorganic insulating film and is formed by a plasma CVD (plasma-enhanced chemical vapor deposition) method.

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