JP2017528032A - ピッチ均一性を有したタイル状cmutダイ - Google Patents
ピッチ均一性を有したタイル状cmutダイ Download PDFInfo
- Publication number
- JP2017528032A JP2017528032A JP2017501658A JP2017501658A JP2017528032A JP 2017528032 A JP2017528032 A JP 2017528032A JP 2017501658 A JP2017501658 A JP 2017501658A JP 2017501658 A JP2017501658 A JP 2017501658A JP 2017528032 A JP2017528032 A JP 2017528032A
- Authority
- JP
- Japan
- Prior art keywords
- cmut
- tile
- transducer array
- substrate
- tiles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000000708 deep reactive-ion etching Methods 0.000 claims abstract description 4
- 239000000523 sample Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 238000012285 ultrasound imaging Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 43
- 210000004027 cell Anatomy 0.000 description 42
- 238000002604 ultrasonography Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000033001 locomotion Effects 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000017531 blood circulation Effects 0.000 description 6
- 238000002592 echocardiography Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000011002 quantification Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 210000004369 blood Anatomy 0.000 description 3
- 239000008280 blood Substances 0.000 description 3
- 238000002059 diagnostic imaging Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003187 abdominal effect Effects 0.000 description 1
- 210000003484 anatomy Anatomy 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 210000000601 blood cell Anatomy 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002792 vascular Effects 0.000 description 1
- 210000001835 viscera Anatomy 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2406—Electrostatic or capacitive probes, e.g. electret or cMUT-probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/26—Arrangements for orientation or scanning by relative movement of the head and the sensor
- G01N29/262—Arrangements for orientation or scanning by relative movement of the head and the sensor by electronic orientation or focusing, e.g. with phased arrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/024—Mixtures
- G01N2291/02475—Tissue characterisation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/10—Number of transducers
- G01N2291/106—Number of transducers one or more transducer arrays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (15)
- CMUTトランスデューサアレイであって、
前記CMUTアレイを形成するように並べて位置合わせされた複数のCMUTタイルを含み、当該タイルは、
基板と、
前記基板上に配置され、1つ以上の行、列、又はその両方に配置された複数のCMUTセルと、
端部に隣接する1つ以上のCMUTセルと側方に近接して前記基板中をエッチングして、前記1つ以上のCMUTセルが、当接するタイルの1つ以上のCMUTセルと一定のピッチで配置されるようなエッチングプロセスによって前記タイルの1つの側面に形成される前記端部と、を含み、
前記エッチングプロセスは、エッチングされたトレンチの側面をポリマーで補強することによって更に行われる、CMUTトランスデューサアレイ。 - 前記端部は、複数のCMUTセルと側方に近接する非線形エッチング端部である、請求項1に記載のCMUTトランスデューサアレイ。
- 前記端部は、異方性エッチングプロセスによってエッチングされる、請求項1に記載のCMUTトランスデューサアレイ。
- 前記異方性エッチングプロセスは、深掘り反応性イオンエッチングプロセスを更に含む、請求項3に記載のCMUTトランスデューサアレイ。
- 第1のタイルの非線形端部が、第2のタイルの2つの端部の一方に隣接して、前記第1のタイルから前記第2のタイルへの一定のCMUTセルピッチを維持しながら配置可能であるような対称性を前記タイルが示す、請求項2に記載のCMUTトランスデューサアレイ。
- 前記タイルは、端部に沿って前記基板上に配置され、前記タイルのCMUTセルに電気結合された複数の相互接続電極を更に含む、請求項1に記載のCMUTトランスデューサアレイ。
- 第1のタイルのエッチング端部が、第2のタイルのエッチング端部に隣接して、前記第1のタイルから前記第2のタイルへの一定のCMUTセルピッチを維持しながら配置可能であるような対称性を前記タイルが示し、
前記第1及び第2のタイルはそれぞれ、端部に沿って配置された複数の相互接続電極を有し、並びに
前記相互接続電極端部は、隣接して配置された前記エッチング端部に対して各タイルの反対側にある、請求項6に記載のCMUTトランスデューサアレイ。 - 前記非線形エッチング端部は、一連の線形の異なる方向の端部セグメントを含む、請求項2に記載のCMUTトランスデューサアレイ。
- 前記非線形エッチング端部は、連続した輪郭のエッチング端部を含む、請求項2に記載のCMUTトランスデューサアレイ。
- 前記端部は、前記基板の最上部及び底部から交互にエッチングを行うことによって形成される、請求項1に記載のCMUTトランスデューサアレイ。
- 前記ポリマーは、ポリイミド又はBCBを更に含む、請求項10に記載のCMUTトランスデューサアレイ。
- 前記端部は、前記基板の最上部からのエッチング及び前記基板の底部からの研削を交互に行うことによって形成される、請求項1に記載のCMUTトランスデューサアレイ。
- 前記CMUTセルは、動作のつぶれモードで動作させられる、請求項1に記載のCMUTトランスデューサアレイ。
- 前記CMUTセルは、バイアス電圧による動作中、前記つぶれモードに維持される、請求項14に記載のCMUTトランスデューサアレイ。
- 請求項1乃至14に記載の前記CMUTトランスデューサアレイを含むプローブを備えた、超音波イメージングシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462025145P | 2014-07-16 | 2014-07-16 | |
US62/025,145 | 2014-07-16 | ||
EP14179370.3 | 2014-07-31 | ||
EP14179370 | 2014-07-31 | ||
PCT/EP2015/065943 WO2016008833A1 (en) | 2014-07-16 | 2015-07-13 | Tiled cmut dies with pitch uniformity |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017528032A true JP2017528032A (ja) | 2017-09-21 |
JP2017528032A5 JP2017528032A5 (ja) | 2018-02-08 |
JP6357275B2 JP6357275B2 (ja) | 2018-07-11 |
Family
ID=51257390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017501658A Active JP6357275B2 (ja) | 2014-07-16 | 2015-07-13 | ピッチ均一性を有したタイル状cmutダイ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10898924B2 (ja) |
EP (1) | EP3169449B1 (ja) |
JP (1) | JP6357275B2 (ja) |
WO (1) | WO2016008833A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017025598A1 (en) * | 2015-08-11 | 2017-02-16 | Koninklijke Philips N.V. | Capacitive micromachined ultrasonic transducers with increased patient safety |
CN109311055B (zh) * | 2016-06-13 | 2021-06-29 | 皇家飞利浦有限公司 | 宽带超声换能器 |
JP2020524917A (ja) * | 2017-06-19 | 2020-08-20 | テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ | 容量性微細構造 |
TWI647146B (zh) | 2017-11-10 | 2019-01-11 | 台灣微轉股份有限公司 | 自行車後變速器 |
US10757510B2 (en) * | 2018-01-08 | 2020-08-25 | Nanofone Limited | High performance sealed-gap capacitive microphone with various gap geometries |
TWI741277B (zh) | 2018-04-09 | 2021-10-01 | 美商伊凡聖斯股份有限公司 | 環境保護感測裝置 |
US11027967B2 (en) * | 2018-04-09 | 2021-06-08 | Invensense, Inc. | Deformable membrane and a compensating structure thereof |
FR3097052B1 (fr) * | 2019-06-07 | 2021-07-02 | Commissariat Energie Atomique | Procédé de fabrication d’une pluralité de résonateurs |
DE102020102248A1 (de) | 2020-01-30 | 2021-08-05 | Sick Engineering Gmbh | Basiswandlerelement für einen Ultraschallwandler |
US11904357B2 (en) * | 2020-05-22 | 2024-02-20 | GE Precision Healthcare LLC | Micromachined ultrasonic transducers with non-coplanar actuation and displacement |
US11911792B2 (en) | 2021-01-12 | 2024-02-27 | GE Precision Healthcare LLC | Micromachined ultrasonic transources with dual out-of-plane and in-plane actuation and displacement |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005032374A1 (ja) * | 2003-10-02 | 2005-04-14 | Hitachi Medical Corporation | 超音波探触子、超音波撮像装置および超音波撮像方法 |
JP2005295553A (ja) * | 2004-03-31 | 2005-10-20 | General Electric Co <Ge> | センサ・アレイの素子を絶縁する方法及び手段 |
JP2007274279A (ja) * | 2006-03-31 | 2007-10-18 | Hitachi Ltd | 超音波トランスデューサおよびその製造方法 |
JP2009182838A (ja) * | 2008-01-31 | 2009-08-13 | Kyoto Univ | 弾性波トランスデューサ、弾性波トランスデューサアレイ、超音波探触子、超音波撮像装置 |
WO2009154091A1 (ja) * | 2008-06-17 | 2009-12-23 | 株式会社日立製作所 | 半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6283919B1 (en) | 1996-11-26 | 2001-09-04 | Atl Ultrasound | Ultrasonic diagnostic imaging with blended tissue harmonic signals |
US6458083B1 (en) | 1996-11-26 | 2002-10-01 | Koninklijke Philips Electronics N.V. | Ultrasonic harmonic imaging with adaptive image formation |
US6013032A (en) | 1998-03-13 | 2000-01-11 | Hewlett-Packard Company | Beamforming methods and apparatus for three-dimensional ultrasound imaging using two-dimensional transducer array |
US5997479A (en) | 1998-05-28 | 1999-12-07 | Hewlett-Packard Company | Phased array acoustic systems with intra-group processors |
EP1254116A4 (en) * | 2000-01-24 | 2003-04-23 | Merck & Co Inc | ALPHA V INTEGRIN RECEPTOR ANTAGONISTS |
US6530885B1 (en) | 2000-03-17 | 2003-03-11 | Atl Ultrasound, Inc. | Spatially compounded three dimensional ultrasonic images |
US6443901B1 (en) | 2000-06-15 | 2002-09-03 | Koninklijke Philips Electronics N.V. | Capacitive micromachined ultrasonic transducers |
US6443896B1 (en) | 2000-08-17 | 2002-09-03 | Koninklijke Philips Electronics N.V. | Method for creating multiplanar ultrasonic images of a three dimensional object |
US6468216B1 (en) | 2000-08-24 | 2002-10-22 | Kininklijke Philips Electronics N.V. | Ultrasonic diagnostic imaging of the coronary arteries |
US7870788B2 (en) * | 2002-01-25 | 2011-01-18 | Kinemetrics, Inc. | Fabrication process and package design for use in a micro-machined seismometer or other device |
US6865140B2 (en) * | 2003-03-06 | 2005-03-08 | General Electric Company | Mosaic arrays using micromachined ultrasound transducers |
US7052464B2 (en) * | 2004-01-01 | 2006-05-30 | General Electric Company | Alignment method for fabrication of integrated ultrasonic transducer array |
US7843022B2 (en) * | 2007-10-18 | 2010-11-30 | The Board Of Trustees Of The Leland Stanford Junior University | High-temperature electrostatic transducers and fabrication method |
EP2269746B1 (en) | 2009-07-02 | 2014-05-14 | Nxp B.V. | Collapsed mode capacitive sensor |
-
2015
- 2015-07-13 EP EP15735707.0A patent/EP3169449B1/en active Active
- 2015-07-13 JP JP2017501658A patent/JP6357275B2/ja active Active
- 2015-07-13 WO PCT/EP2015/065943 patent/WO2016008833A1/en active Application Filing
- 2015-07-13 US US15/325,492 patent/US10898924B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005032374A1 (ja) * | 2003-10-02 | 2005-04-14 | Hitachi Medical Corporation | 超音波探触子、超音波撮像装置および超音波撮像方法 |
JP2005295553A (ja) * | 2004-03-31 | 2005-10-20 | General Electric Co <Ge> | センサ・アレイの素子を絶縁する方法及び手段 |
JP2007274279A (ja) * | 2006-03-31 | 2007-10-18 | Hitachi Ltd | 超音波トランスデューサおよびその製造方法 |
JP2009182838A (ja) * | 2008-01-31 | 2009-08-13 | Kyoto Univ | 弾性波トランスデューサ、弾性波トランスデューサアレイ、超音波探触子、超音波撮像装置 |
WO2009154091A1 (ja) * | 2008-06-17 | 2009-12-23 | 株式会社日立製作所 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10898924B2 (en) | 2021-01-26 |
US20170165715A1 (en) | 2017-06-15 |
EP3169449B1 (en) | 2018-03-21 |
EP3169449A1 (en) | 2017-05-24 |
JP6357275B2 (ja) | 2018-07-11 |
WO2016008833A1 (en) | 2016-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6357275B2 (ja) | ピッチ均一性を有したタイル状cmutダイ | |
JP7216550B2 (ja) | 広帯域超音波トランスジューサ | |
JP6767474B2 (ja) | 増加される寿命を備える容量性マイクロマシン超音波トランスデューサ | |
CN102333485B (zh) | 具有机械塌陷保持的预塌陷cmut | |
US20160199030A1 (en) | Dual mode cmut transducer | |
CN110100294B (zh) | 电容式射频微机电开关的系统和操作方法 | |
JP2018504165A (ja) | マイクロマシン超音波トランスデューサの互い違いの列を有するカテーテルトランスデューサ | |
JP2022105543A (ja) | 増大された患者安全性を持つ容量性マイクロマシン超音波トランスデューサ | |
WO2015028945A2 (en) | Variable frequency control of collapsed mode cmut transducer | |
US11241715B2 (en) | Ultrasound system and ultrasonic pulse transmission method | |
WO2017149421A1 (en) | Ultrasonic cmut transducer array with improved depth of field | |
CN106660072B (zh) | 具有节距均匀性的平铺的cmut切片 | |
US20220304659A1 (en) | Trenches for the reduction of cross-talk in mut arrays | |
US20230002213A1 (en) | Micro-machined ultrasound transducers with insulation layer and methods of manufacture | |
JP2024528548A (ja) | 絶縁層を伴う微小機械加工超音波トランスデューサ、および、製造の方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171225 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171225 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20171225 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180123 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180518 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180615 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6357275 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |