JP2017212207A - Illumination device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an illumination device capable of providing an environment for improving visibility, reducing power consumption, or improving reliability.SOLUTION: There is provided an illumination device comprising self-luminous dimming means, reflective dimming means, luminance measuring means, input means, and an arithmetic device. The arithmetic device comprises a function which controls luminance of the self-luminous dimming means and reflectance of the reflective dimming means on the basis of information obtained from the input means and the luminance measuring means. The input means can receive information from electronic equipment and the like under an indoor environment. The self-luminous dimming means includes an EL layer, and the reflective dimming means includes a liquid crystal layer.SELECTED DRAWING: Figure 1

Description

The present invention relates to a lighting device using a light emitting element. Further, the present invention relates to an electronic device using the lighting device.

In recent years, a light-emitting element (an electroluminescent element: also referred to as an EL element) having a light-emitting layer containing an organic compound (hereinafter also referred to as an EL layer) between a pair of electrodes has been actively developed. One field that is attracting attention as its application is the lighting field. The reason for this is that the EL element has characteristics not found in other lighting fixtures, such as being thin and light and capable of emitting light on the surface.

On the other hand, in recent years, various problems such as destruction of the ozone layer and global warming have been highlighted, and reduction of carbon dioxide has become an important issue. Even in the lighting field, it has been reviewed to effectively save electricity by using daylight, which is naturally abundant, and “daylight utilization technology” has been reviewed. Daylighting refers to lighting indoors using daylight.

Control of the light environment by a method combining light from a light emitting element and daylighting has been studied. Patent Document 1 proposes a method in which daylight is taken from a window and an artificial light source illuminator is provided and controlled by an illuminance sensor.

Patent Publication 2010-160975

An object of one embodiment of the present invention is to provide a lighting device that provides an environment in which visibility of a projected image or the like in a room is increased. Another object of one embodiment of the present invention is to provide a lighting device that reduces power consumption. Another object of one embodiment of the present invention is to provide a lighting device that improves reliability. Another object of one embodiment of the present invention is to provide a novel lighting device or an electronic device.

An object of one embodiment of the present invention is to solve at least one of the above problems.

The present inventors have found that a lighting device manufactured by suitably combining a light emitting element and a reflective element can solve the above-described problems.

That is, one embodiment of the present invention is a lighting device including a self-luminous dimming unit, a reflective dimming unit, an illuminance measuring unit, and an arithmetic device. The arithmetic device has a function of controlling the luminance of the self-luminous dimming means and the reflectance of the reflective dimming means based on information obtained from the illuminance measuring means.

In the above structure, it is preferable to have an input unit. Further, the input means includes means for acquiring output information from the image output apparatus, and the output information includes information that the image output apparatus emits light, and it is preferable that the reflectance of the reflective dimming means is reduced.

In each of the above structures, the self-luminous dimming means preferably has an EL layer. The reflective dimming means preferably has a liquid crystal layer.

Each of the above-described configurations includes a controller, and the controller preferably has a function of controlling the luminance of the self-luminous dimming unit and a function of controlling the reflectance of the reflective dimming unit.

Another embodiment of the present invention is an electronic device including a display device including the lighting device having any of the above structures, a self-luminous pixel, and a reflective pixel.

In the above configuration, the display device preferably controls display brightness based on information obtained from the illuminance measurement means.

Such a lighting device of one embodiment of the present invention can irradiate light only with a light-emitting element in an environment with small external light.

In addition, the lighting device of another embodiment of the present invention can reduce power for operating the lighting device by using a reflective element instead of or in combination with a light-emitting element in an environment with large external light. it can.

The lighting device according to another embodiment of the present invention includes a light-emitting element having a low reflectance and a reflective element provided in a room when the indoor illuminance is set to an arbitrary small value in an environment with large external light. By doing so, it is possible to suitably control the illuminance and enhance the visibility of an indoor projection image or the like.

In the lighting device of another embodiment of the present invention, the reflective element is actively operated under an environment with a large amount of outside light. That is, the amount of light irradiation power of the light emitting element when controlling the light environment is reduced, the operation time of the light emitting element having a shorter lifetime than that of the reflective element can be reduced, and the reliability of the lighting device can be improved.

The lighting device or the electronic device of one embodiment of the present invention can increase the visibility of an indoor projection image or the like. In addition, the lighting device or the electronic device of one embodiment of the present invention can improve reliability. In addition, the lighting device or the electronic device of one embodiment of the present invention can reduce power for operating the lighting device.

FIG. 6 illustrates a lighting device which is one embodiment of the present invention. FIG. 10 illustrates a configuration example of an information processing device which is one embodiment of the present invention. FIG. 14 illustrates an example of a flowchart which is one embodiment of the present invention. FIG. 14 illustrates an example of a flowchart which is one embodiment of the present invention. 4A and 4B each illustrate a light-emitting element and a lighting device which are one embodiment of the present invention. FIG. 6 illustrates a lighting device which is one embodiment of the present invention. FIG. 6 illustrates a lighting device which is one embodiment of the present invention. FIG. 14 illustrates an example of a flowchart which is one embodiment of the present invention. FIG. 6 illustrates an example of a flowchart which is one embodiment of the present invention and a part of a lighting device. FIG. 9 is a block diagram illustrating a structure of a display device according to an embodiment. 4 is a block diagram illustrating a structure of a display portion of the information processing device according to the embodiment. FIG. 3A and 3B each illustrate a structure of a display panel that can be used for a display device according to an embodiment. FIG. 10 is a cross-sectional view illustrating a structure of a display panel that can be used for a display device according to an embodiment. FIG. 10 is a cross-sectional view illustrating a structure of a display panel that can be used for a display device according to an embodiment. FIG. 6 is a bottom view illustrating a structure of a display panel that can be used for the display device according to the embodiment. FIG. 9 is a circuit diagram illustrating a pixel circuit of a display panel that can be used for the display device according to the embodiment. FIG. 6 is a schematic diagram illustrating the shape of a reflective film of a pixel that can be used for a display device according to an embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)

In this embodiment, a lighting device of one embodiment of the present invention will be described.

In FIG. 1A, the lighting device 1001 of one embodiment of the present invention is provided on the ceiling indoors. The illuminating device 1001 is one in which a region 1002 of the illuminating device is repeatedly arranged in a planar shape.

In the same room, there are an image output device 1003 and a screen 1004 that is a projection surface of a projection image emitted from the image output device 1003. Further, there are a lighting 1005 and a window 1006 which are not included in the lighting device 1001 of one embodiment of the present invention.

FIG. 1B illustrates a region 1002 of the lighting device. In one area 1002 of the lighting device, the light emitting elements 1010 and the reflecting elements 1011 are arranged in a tile shape. The light emitting element 1010 is a self-luminous dimming unit, and the reflecting element 1011 is a reflective dimming unit. The lighting device of one embodiment of the present invention can change the luminance of light emitted from the light-emitting element 1010 and can change the reflectance when the reflective element 1011 reflects light. In FIG. 1B, the light-emitting element 1010 and the reflective element 1011 are arranged in a lattice shape for the convenience of wiring to each element. However, the arrangement is not limited to that shown in FIG. It is also possible to form each of these elements without any gaps.

The lighting device 1001 of one embodiment of the present invention may include a detection portion 250 as illustrated in FIG. Further, the input unit 240 may be included. The detector 250 is an illuminance measuring unit as an example. The input unit 240 is an input unit for signals from an electronic device, for example.

In the lighting device 1001 of one embodiment of the present invention, the detection unit 250 acquires the indoor light environment in which the lighting device 1001 is arranged. The lighting device 1001 of one embodiment of the present invention emits light into a room with the light-emitting element 1010 when the amount of light such as light from the lighting 1005 and external light from the window 1006 is small and the illuminance is low in a light environment. Can do.

The lighting device 1001 of one embodiment of the present invention emits light into the room with the reflective element 1011 when the amount of light such as light from the lighting 1005 or outside light from the window 1006 is large and the illuminance is high in a light environment. be able to. At this time, light irradiation from the light-emitting element 1010 can be reduced or reduced to zero. In addition, when describing reflection in this specification, reflection is used in the same meaning as light reflection. The reflection of light from the reflecting element is used in the same meaning as the irradiation of light from the reflecting element into the room.

In the lighting device 1001 of one embodiment of the present invention, when the illuminance is high in a light environment due to light from the lighting 1005, external light from the window 1006, and the like, the image output device 1003 transmits light to the screen 1004 from the input unit 240. When the projected information is acquired, light irradiation from the light emitting element 1010 or light reflection from the reflecting element 1011 can be reduced.

The light intensity emitted from the light-emitting element 1010 or the reflective element 1011 can be controlled by the information processing device 200 (see FIG. 2) included in the lighting device 1001 of one embodiment of the present invention. The information processing device 200 is an arithmetic device that controls the lighting device 1001 of one embodiment of the present invention.

With the above structure, the lighting device of one embodiment of the present invention can reduce power consumption of the light-emitting element and improve reliability. In addition, the lighting device of one embodiment of the present invention can provide an environment in which the illuminance in the room due to external light is reduced and the visibility of an image or the like projected from the indoor image output device or the like is increased.

(Embodiment 2)
In this embodiment, a structure of an information processing device 200 that can be used for the lighting device of one embodiment of the present invention will be described with reference to FIGS.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

FIG. 2 is a block diagram illustrating a structure of an information processing device 200 that can be used for the lighting device of one embodiment of the present invention.

FIG. 3 is a flowchart illustrating a program that can be used for the information processing apparatus 200.

The information processing apparatus 200 described in this embodiment includes an input / output device 220 and an arithmetic device 210 (see FIG. 2).

The input / output device 220 has a function of supplying the detection information P2. Further, the input / output device 220 has a function of being supplied with the dimming information V1 and the dimming information V2.

The arithmetic device 210 has a function to which the detection information P2 is supplied. Moreover, the arithmetic unit 210 has a function of supplying dimming information V1 and dimming information V2.

The input / output device 220 includes an irradiation unit 230, a reflection unit 235, an input unit 240, and a detection unit 250.

The input unit 240 has a function of supplying the input information P1 to the arithmetic device 210. The input information P1 includes a signal from an electronic device.

The detection unit 250 has a function of supplying the detection information P2 to the arithmetic device 210. The detection unit 250 includes an illuminance measurement unit as an example, and at this time, the detection information P2 includes the illuminance information of the environment in which the information processing apparatus 200 is used, which is acquired by the illuminance measurement unit.

The irradiation unit 230 has a function of adjusting the luminance of light emitted from the light emitting element 1010 based on the light control information V1. In one embodiment of the present invention, the dimming information V1 is a numerical value, and the luminance of the light-emitting element 1010 increases as the numerical value increases. The reflection unit 235 has a function of adjusting the reflectance when the ambient light is reflected by the reflection element 1011 based on the dimming information V2. In one embodiment of the present invention, the light control information V2 is a numerical value, and the reflectance of the reflective element 1011 increases as this value increases.

The arithmetic device 210 has a function of generating dimming information V1 and dimming information V2.

The information processing apparatus 200 described in the present embodiment includes an arithmetic device having a function of supplying dimming information V1 and dimming information V2 based on input information P1 and detection information P2. As a result, a novel information processing apparatus with excellent convenience can be provided.

<Configuration example>
The information processing apparatus 200 includes an arithmetic device 210, an input / output device 220, an irradiation unit 230, a reflection unit 235, an input unit 240, and a detection unit 250.

<< Calculation device 210 >>
The calculation device 210 includes a calculation unit 211. A transmission path 214 and an input / output interface 215 are provided.

<< Calculation unit 211 >>
The calculation unit 211 has a function of executing a program, for example.

"program"
For example, a program for determining the light amount of the light emitting element and the reflectance of the reflecting element based on the input information P1 and the detection information P2 can be used for the arithmetic device 210.

Specifically, a program having the following steps can be used.

<< First Step >>
In the first step, the detection information P2 supplied from the detection unit 250 is acquired (see FIG. 3 (T1)). The detection information P2 at this time includes indoor illuminance.

<< Second Step >>
In the second step, the illuminance of the outside environment is calculated and it is determined whether the illuminance is large (see FIG. 3 (T2)). The outside environment here refers to an indoor light environment caused by light from other than the lighting device of one embodiment of the present invention. For example, in FIG. 1, the outside environment is a light environment by irradiation of light from other than the lighting device that is one embodiment of the present embodiment, such as the lighting 1005 or the window 1006. Light irradiation by the outside environment and light irradiation by the lighting device that is one embodiment of the present embodiment affect the illuminance in the room, and the illuminance in the room included in the detection information P2 is the two light irradiations. Does not distinguish.

In the lighting device according to one embodiment of the present embodiment, the illuminance of the outside environment and the detection information P2 included in the calculation unit 211 are obtained under the condition that irradiation is performed using the dimming information V1 and dimming information V2 output immediately before. The illuminance of the outside environment is calculated from the correlation information. The correlation information can be acquired by installing the lighting device according to one embodiment of the present invention indoors, and then changing the dimming information V1 and the dimming information V2 to acquire changes in the detection information P2. . Further, since the correlation information changes depending on what is placed in the room, it is preferable to update it periodically.

When it can be determined that the outside environment has high illuminance, the process proceeds to step 3-1. When it can be determined that the outside environment has low illuminance, the process proceeds to step 3-2.

<< Step 3-1 >>
In the step 3-1, since the illuminance is large in the outside environment, the light control means is only the reflective element. By not using the light-emitting element, deterioration of the light-emitting element typified by the EL layer can be prevented (see FIG. 3 (T3-1)).

<< Step 3-2 >>
In the 3-2 step, since the illuminance is large in the outside environment, the light control means is only the reflective element (see FIG. 3 (T3-2)).

<< Fourth Step >>
In the fourth step, the input information P1 supplied from the input unit 240 is acquired (see FIG. 3 (T4)). The input information P1 at this time includes information obtained from, for example, the image output device 1003 and an electronic device such as a portable terminal.

<< 5th step >>
In the fifth step, based on the input information P1, it is determined whether it is better to reduce the illuminance by the light emitted from the lighting device of one embodiment of the present invention (see FIG. 3 (T5)). For example, when the image output device 1003 projects an image, that is, light, it can be determined that the illuminance by light emitted from the lighting device of one embodiment of the present invention should be reduced. For example, when an instruction to lower the illuminance by light emitted from the lighting device of one embodiment of the present invention is issued from an electronic device using a mobile terminal as an example, the determination is made according to the instruction. When it can be determined that it is better to reduce the illuminance by the light emitted from the illumination device, the process proceeds to step 6-1. Otherwise, the process proceeds to step 6-2.

<< Step 6-1 >>
In the sixth step, the illuminance by the dimming information V1 and the dimming information V2 is set to a small setting value. In particular, when the illuminance in the outside environment is large, the illuminance in the room can be suitably reduced by reducing the dimming information V2 (see FIG. 3 (T6-1)). Illuminance by light emitted from the lighting device of one embodiment of the present invention is output as dimming information V1 and dimming information V2.

<< Step 6-2 >>
In step 6-2, the illuminance based on the light control information V1 and the light control information V2 is set as a standard setting value (see FIG. 3 (T6-2)).

After the above steps, the process returns to the first step.

<< Input / output interface 215, transmission path 214 >>
The input / output interface 215 includes a terminal or a wiring, and has a function of supplying and supplying information. For example, the transmission line 214 can be electrically connected. Further, the input / output device 220 can be electrically connected.

The transmission path 214 includes wiring, and supplies information and has a function of being supplied. For example, the calculation unit 211 and the input / output interface 215 can be electrically connected.

<< Input / output device 220 >>
The input / output device 220 includes an irradiation unit 230, a reflection unit 235, an input unit 240, and a detection unit 250.

For example, the irradiation part 230 and the reflection part 235, and the input part 240 provided with the area | region which overlaps with the irradiation part 230 and the reflection part 235 are provided. A touch panel or the like can be used for the input / output device 220. Specifically, the touch panel described in Embodiment 5 can be used for the input / output device 220.

<< Irradiation unit 230, reflection unit 235 >>
The irradiation unit 230 includes a light emitting element 1010 and a circuit that supplies power to the light emitting element 1010. The light-emitting element 1010 can use an EL layer. It has a function of irradiating the amount of light based on the light control information V1.
The reflection unit 235 includes a reflection element 1011 and a circuit that supplies a signal to the reflection element 1011. As the reflective element 1011, a reflective liquid crystal element can be used. It has a function of reflecting ambient light with a reflectance based on dimming information V2.

The upper limit of the light transmittance when the light emitting element transmits the polarizing filter is 50%. For this reason, it is desirable to irradiate the light from the light emitting element indoors without passing through the polarizing filter in order to prevent the light emitting element from deteriorating. When a light-emitting element and a reflective liquid crystal element are used, and the reflective liquid crystal element has a size capable of processing a polarizing filter, and preferably has a diameter of 0.5 mm square or more and 1 m square or less, only in the reflective liquid crystal element region A polarizing filter is provided. At this time, light from the light-emitting element does not pass through the polarizing filter, and thus is irradiated indoors without reducing the intensity.

<Transistor>
For example, a semiconductor film that can be formed in the same process can be used for a transistor in a driver circuit and a pixel circuit.

For example, a bottom-gate transistor, a top-gate transistor, or the like can be used.

By the way, for example, a bottom-gate transistor production line using amorphous silicon as a semiconductor can be easily modified to a bottom-gate transistor production line using an oxide semiconductor as a semiconductor. For example, a top gate type production line using polysilicon as a semiconductor can be easily modified to a top gate type transistor production line using an oxide semiconductor as a semiconductor.

For example, a transistor including a semiconductor containing an element belonging to Group 14 can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. For example, a transistor in which single crystal silicon, polysilicon, microcrystalline silicon, amorphous silicon, or the like is used for a semiconductor film can be used.

Note that the temperature required for manufacturing a transistor using polysilicon as a semiconductor is lower than that of a transistor using single crystal silicon as a semiconductor.

In addition, the field effect mobility of a transistor using polysilicon as a semiconductor is higher than that of a transistor using amorphous silicon as a semiconductor. Thereby, the aperture ratio of the pixel can be improved. In addition, a pixel provided with extremely high definition, a gate driver circuit, and a source driver circuit can be formed over the same substrate. As a result, the number of parts constituting the electronic device can be reduced.

Further, the reliability of a transistor using polysilicon as a semiconductor is superior to a transistor using amorphous silicon as a semiconductor.

For example, a transistor including an oxide semiconductor can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

As an example, a transistor whose leakage current in an off state is smaller than that of a transistor using amorphous silicon as a semiconductor film can be used. Specifically, a transistor using an oxide semiconductor for a semiconductor film can be used.

For example, a transistor using a compound semiconductor can be used. Specifically, a semiconductor containing gallium arsenide can be used for the semiconductor film.

For example, a transistor using an organic semiconductor can be used. Specifically, an organic semiconductor containing polyacenes or graphene can be used for the semiconductor film.

<< Input unit 240 >>
The input unit 240 acquires output information from an image output device or the like disposed in the vicinity of the lighting device of one embodiment of the present invention, and supplies the input information P1 to the arithmetic device 210 based on the output information. The image output device is preferably a projector that reproduces a television, a planetarium, a movie, or the like on a screen. The method for obtaining the output information is a wireless method or a wired method. Preferably, the input unit 240 includes a receiving unit, and receives the output information as an electric signal, infrared light, or microwave. More preferably, the reception unit is a wireless transmission / reception unit, and the output information may be transmitted / received by a wi-fi method.

The output information preferably includes whether or not an image is projected from the image output device or the like, that is, whether or not light is emitted, in the irradiation range of the lighting device of one embodiment of the present invention. This is because, in an environment where an illumination device according to one embodiment of the present invention is placed, when an image is projected from an image output device or the like, emission of light from the illumination device is suppressed, or light from the environment to the illumination device is suppressed. This is because one of the purposes is to suppress reflection.

The output information may be transmitted / received from a portable terminal or the like by a wireless method, preferably a wi-fi method, at a place away from the irradiation range of the lighting device of one embodiment of the present invention. At this time, the output information preferably includes information for controlling the dimming information V1 and the dimming information V2. This output information transmission / reception method can be aimed at controlling the lighting device based on, for example, fluctuations in electricity charges, power generation by the photovoltaic power generation system, or power storage rate information.

<< Detection unit 250 >>
A sensor having a function of detecting the surrounding state and supplying the detection information P <b> 2 to the arithmetic device 210 can be used for the detection unit 250. The detection unit 250 includes an illuminance sensor. The detection information P2 includes illuminance information obtained from an illuminance sensor that detects illuminance under the environment.

The detection unit 250 may include, for example, a human sensor. For example, when a person operates, the calculation unit can make an association that increases the amount of light emitted from the irradiation unit 230 and the reflection unit 235.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

With the above information processing device, the light irradiation power amount of the light-emitting element included in the lighting device of one embodiment of the present invention is reduced. As a result, the operation time of the light-emitting element having a shorter lifetime than that of the reflective element can be reduced, and the reliability of the lighting device of one embodiment of the present invention can be improved. In addition, the lighting device of one embodiment of the present invention can provide an environment in which the illuminance in the room due to external light is reduced and the visibility of an image or the like projected from the indoor image output device or the like is increased.

(Embodiment 3)
In the present embodiment, the part (see T3, T3-1, T3-2) in the program described in the second embodiment that determines whether the external environment has high illuminance is based on the detection information P2. Now, one mode of judgment for properly using the reflective element and the light emitting element will be described in detail.

Specifically, a program having the following steps can be used.

<< Steps 2-1, 2-2, 2-3, 2-4 >>
As in the second embodiment, after the first step, the illuminance of the outside environment is calculated based on the detection information P2 in the step 2-1 (see T2-1 in FIG. 4A).

Here, the calculation unit 211 compares the illuminance threshold value of the external environment with the illuminance value of the external environment. The threshold includes a threshold A, a threshold B smaller than the threshold A, a threshold C smaller than the threshold B, and a threshold D smaller than the threshold C. The threshold A, threshold B, threshold C, and threshold D in one embodiment of the present invention are numerical values corresponding to illuminance, and the illuminance corresponding to the threshold A is large and the illuminance corresponding to the threshold D is small (FIG. 4B )reference).

If the illuminance of the outside environment is greater than or equal to the threshold value D, the process proceeds to step 2-2 (see T2-2 in FIG. 4A). If the illuminance of the outside environment is less than the threshold value D, the process proceeds to step 3-1 (see T3-1 in FIG. 4A).

If the illuminance of the outside environment is equal to or greater than the threshold value C, the process proceeds to step 2-3 (see T2-3 in FIG. 4A). If the illuminance of the outside environment is less than the threshold value D, the process proceeds to step 3-2 (see T3-2 in FIG. 4A).

If the illuminance of the outside environment is greater than or equal to the threshold value B, the process proceeds to step 2-4 (see T2-4 in FIG. 4A). If the illuminance of the outside environment is less than the threshold value D, the process proceeds to step 3-3 (see T3-3 in FIG. 4A).

If the illuminance of the outside environment is greater than or equal to the threshold A, the process proceeds to step 3-5 (see T2-5 in FIG. 4A). If the illuminance of the outside environment is less than the threshold value D, the process proceeds to step 3-4 (see T3-4 in FIG. 4A).

<< Steps 3-1, 3-2, 3-3, 3-4, 3-5 >>
In step 3-1, dimming information V1 that maximizes the upper limit of the intensity of light emitted from the light emitting element, and dimming information V2 that sets 100% of the upper limit of the reflectance of light from the reflecting element. Set.

In the step 3-2, dimming information V1 having a value obtained by adjusting the upper limit of the intensity of light emitted from the light emitting element, and dimming information having 100% of the upper limit value of the reflectance of light from the reflecting element. V2 is set. The adjusted value increases as the illuminance of the outside environment increases in the range from the maximum to zero.

In the step 3-3, dimming information V1 that sets the upper limit of the intensity of light emitted from the light emitting element to 0, and dimming information V2 that sets the upper limit of the reflectance of light from the reflecting element to 100%. Set.

In the third to fourth steps, dimming information V1 that sets the upper limit of the intensity of light emitted from the light emitting element to 0, and dimming information V2 that sets the upper limit of the reflectance of light from the reflecting element to an adjusted value. Set. The adjusted value increases as the illuminance of the outside environment increases in the range of 0% to 100% in the upper limit value of the reflectance of light.

In the third to fourth steps, dimming information V1 that sets the upper limit of the intensity of light emitted from the light emitting element to 0 and dimming information V2 that sets the upper limit of the reflection of light from the reflecting element to 0 are set. .

As described above, the process proceeds to the fourth step in FIG. 3 through any one of the steps 3-1, 3-2, 3-3, 3-4, and 3-5.

<After the fourth step>
The steps after the fourth step can be the same as those in the flowchart shown in FIG. However, in the fifth step of FIG. 3 and the sixth step of FIG. 3, the dimming information V1 and the dimming information V2 are the 3-1, the 3-2, the 3-3, the 3- 4. Set again in the range set in step 3-5.

With the above program, the lighting device of one embodiment of the present invention can reduce power consumption of the light-emitting element and improve reliability.

(Embodiment 4)
In this embodiment, a light-emitting element that can be used for the lighting device of one embodiment of the present invention will be described with reference to FIGS.

A substrate 100 illustrated in FIG. 5A transmits at least light having a wavelength emitted from the EL layer 104. Specifically, a glass substrate, a quartz substrate, a substrate or a film made of an organic resin can be used. Examples of the organic resin include acrylic resin, polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate resin (PC), and polyether sulfone resin ( PES), polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin and the like. The substrate 100 may be a structure in which a protective film or a member for reinforcement is provided on these substrates or films.

A first electrode 101 made of a transparent conductive film is provided on the substrate 100. As the transparent conductive film, indium oxide (In ₂ O ₃ ), indium tin oxide (In ₂ O ₃ —SnO ₂ : also referred to as ITO), indium zinc oxide (In ₂ O ₃ —ZnO), zinc oxide (ZnO) ) Or zinc oxide to which gallium is added can be used. These conductive metal oxide films are usually formed by sputtering, but may be formed by applying a sol-gel method or the like. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( By forming Pd), titanium (Ti), or a nitride of a metal material (eg, titanium nitride) thin enough to have sufficient translucency, a transparent conductive film can be formed and used as the first electrode 101. .

Note that the above-described material is a material having a high work function (specifically, 4.0 eV or more) which is preferably used when the first electrode 101 is an anode. When the first electrode 101 is a cathode, a material having a low work function (specifically, 3.8 eV or less), specifically, a metal belonging to Group 1 or Group 2 of the periodic table, that is, lithium (Li ) And alkali metals such as cesium (Cs), and alkaline earth metals such as magnesium (Mg), calcium (Ca) and strontium (Sr), and alloys containing these (MgAg, AlLi, etc.), europium (Eu), ytterbium Rare earth metals such as (Yb) and alloys containing these, aluminum (Al), alloys thereof, and the like can be used. These materials can also be used as the first electrode 101 by forming the material thin enough to have sufficient light-transmitting properties to form a transparent conductive film.

Moreover, it is also possible to use a conductive polymer. Examples of the conductive polymer include polyaniline and / or a derivative thereof, polypyrrole and / or a derivative thereof, polythiophene and / or a derivative thereof, and a copolymer of two or more of these. For example, a π-electron conjugated conductive polymer can be used.

The EL layer 104 is formed so as to cover the first electrode 101. There is no particular limitation on the stacked structure of the EL layer 104, and it includes a light-emitting layer, an electron transport layer containing a substance with a high electron transport property, a hole transport layer containing a substance with a high hole transport property, or a substance with a high electron injection property. If each functional layer is appropriately combined, such as an electron injection layer, a hole injection layer containing a substance having a high hole injection property, or a bipolar layer containing a bipolar material (a substance having a high electron and hole transport property), Good. These functional layers are not essential except the light emitting layer, and may include other functional layers other than those described above. Note that such a laminated structure may be referred to as a light emitting unit.

The EL layer 104 includes a hole injection layer 1701, a hole transport layer 1702, a light emitting layer 1703, an electron transport layer 1704, and an electron injection layer 1705. The configuration and materials of each layer are specifically shown below.

The hole-injection layer 1701 is a layer that is provided in contact with the anode and includes a substance having a high hole-injection property. Molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (CuPc), 4,4′-bis [N- (4-diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), N, N′-bis {4- [bis (3-methylphenyl) amino] phenyl} -N, N′-diphenyl- (1,1′-biphenyl) -4,4′-diamine (abbreviation: The hole injection layer 1701 can also be formed by an aromatic amine compound such as DNTPD) or a polymer such as poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS).

For the hole-injecting layer 1701, a composite material in which an acceptor substance is contained in a substance having a high hole-transport property can be used. Note that by using a composite material in which an acceptor substance is contained in a substance having a high hole-transport property, a material for forming an electrode can be selected regardless of the work function of the electrode. That is, not only a material having a high work function but also a material having a low work function can be used as the anode. As the acceptor substance, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ₄ -TCNQ), chloranil, and the like can be given. Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. In particular, molybdenum oxide is a preferable material because it is stable in the air, has a low hygroscopic property, and is easy to handle.

As the substance having a high hole-transport property used for the composite material, various compounds such as an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound (oligomer, dendrimer, polymer, and the like) can be used. Note that the organic compound used for the composite material is preferably an organic compound having a high hole-transport property. Specifically, a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher is preferable. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Below, the organic compound which can be used for a composite material is listed concretely.

For example, as an aromatic amine compound, N, N′-di (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [N- (4- Diphenylaminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), N, N′-bis {4- [bis (3-methylphenyl) amino] phenyl} -N, N′-diphenyl- (1,1 '-Biphenyl) -4,4'-diamine (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), etc. Can do.

Specific examples of the carbazole derivative that can be used for the composite material include 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1), 3 , 6-Bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- (9- Phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1) and the like.

As other carbazole derivatives that can be used for the composite material, 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl) Phenyl] benzene (abbreviation: TCPB), 9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 1,4-bis [4- (N-carbazolyl) phenyl] -2,3,5,6-tetraphenylbenzene and the like can be used.

Examples of aromatic hydrocarbons that can be used for the composite material include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9. , 10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) anthracene ( Abbreviations: t-BuDBA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA), 2-tert-butyl-9, 0-bis [2- (1-naphthyl) phenyl] anthracene, 9,10-bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7-tetramethyl-9,10-di (1 -Naphthyl) anthracene, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10 , 10′-bis (2-phenylphenyl) -9,9′-bianthryl, 10,10′-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9′-bianthryl, Anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene and the like can be mentioned. In addition, pentacene, coronene, and the like can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1 × 10 ⁻⁶ cm ² / Vs or more and having 14 to 42 carbon atoms.

The aromatic hydrocarbon that can be used for the composite material may have a vinyl skeleton. As the aromatic hydrocarbon having a vinyl group, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.

In addition, poly (N-vinylcarbazole) (abbreviation: PVK), poly (4-vinyltriphenylamine) (abbreviation: PVTPA), poly [N- (4- {N ′-[4- (4-diphenylamino)] Phenyl] phenyl-N′-phenylamino} phenyl) methacrylamide] (abbreviation: PTPDMA), poly [N, N′-bis (4-butylphenyl) -N, N′-bis (phenyl) benzidine] (abbreviation: Polymer compounds such as Poly-TPD can also be used.

The layer made of such a composite material has almost no increase in driving voltage even if it is formed thick, so it is very important when performing optical design to control the extraction efficiency and directivity of light emitted from the light emitting layer. It can be used suitably.

As described above, when the hole injection layer 1701 is formed using a composite material, an electrode material can be selected regardless of a work function. When a composite material is used as the hole injection layer 1701, the first electrode 101 is an anode and the oxide layer 103 is not formed, and the auxiliary electrode 102 is formed of a material having a low work function. In addition, holes are injected from the hole injection layer into the hole transport layer or the light emitting layer, and light emission occurs between the auxiliary electrode 102 and the second electrode. This light emission is blocked by the auxiliary electrode 102 and cannot be taken out, leading to a reduction in power efficiency. However, as in the present embodiment, by forming the insulating oxide layer 103 by oxidizing the auxiliary electrode 102, such wasteful light emission does not occur, and a reduction in power efficiency can be suppressed. Thus, it can be seen that the structure of this embodiment is a particularly useful structure when a composite material is used for the hole-injection layer 1701.

The hole-transport layer 1702 is a layer that contains a substance having a high hole-transport property. Examples of the substance having a high hole-transport property include 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB) and N, N′-bis (3-methylphenyl). ) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenyl Amine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N— An aromatic amine compound such as (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) can be used. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

For the hole-transport layer 1702, a high molecular compound such as poly (N-vinylcarbazole) (abbreviation: PVK) or poly (4-vinyltriphenylamine) (abbreviation: PVTPA) can also be used.

The light-emitting layer 1703 is a layer containing a light-emitting substance. The type of the light emitting layer 1703 may be either a single layer light emitting layer mainly composed of an emission center substance or a so-called host-guest type light emitting layer in which the emission center material is dispersed in the host material. I do not care.

There is no restriction | limiting in the luminescent center material used, The material which emits well-known fluorescence or phosphorescence can be used. As a fluorescent material, for example, N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenylstilbene-4,4′-diamine (abbreviation: YGA2S), 4 -(9H-carbazol-9-yl) -4 '-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), etc., and 4- (9H-carbazole-9 having an emission wavelength of 450 nm or more -Yl) -4 '-(9,10-diphenyl-2-anthryl) triphenylamine (abbreviation: 2YGAPPA), N, 9-diphenyl-N- [4- (10-phenyl-9-anthryl) phenyl]- 9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4- (10-phenyl) 9-anthryl) -4 ′-(9-phenyl-9H-carbazol-3-yl) triphenylamine (abbreviation: PCBAPA), N, N ″-(2-tert-butylanthracene-9,10-diyldi- 4,1-phenylene) bis [N, N ′, N′-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N, 9-diphenyl-N- [4- (9,10-diphenyl-) 2-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: 2PCAPPA), N- [4- (9,10-diphenyl-2-anthryl) phenyl] -N, N ′, N′-triphenyl- 1,4-phenylenediamine (abbreviation: 2DPAPPA), N, N, N ′, N ′, N ″, N ″, N ′ ″, N ′ ″-octaphenyldibenzo [g, p] chrysene- 2,7,10,15-te Laamine (abbreviation: DBC1), Coumarin 30, N- (9,10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N- [9,10- Bis (1,1′-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9,10-diphenyl-2-anthryl) ) -N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1′-biphenyl-2-yl) -2-anthryl] -N, N ', N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis (1,1'-biphenyl-2-yl) -N- [4- (9H- Carbazo Ru-9-yl) phenyl] -N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N, N, 9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), coumarin 545T, N, N'- Diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis (1,1′-biphenyl-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), 2- (2- {2- [4 -(Dimethylamino) phenyl] ethenyl} -6-methyl-4H-pyran-4-ylidene) propanedinitrile (abbreviation: DCM1), 2- {2-methyl-6- [2- (2,3,6,6) 7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl] -4H-pyran-4-ylidene} propanedinitrile (abbreviation: DCM2), , N, N ′, N′-tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N, N, N ′, N′-tetrakis (4 -Methylphenyl) acenaphtho [1,2-a] fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2- {2-isopropyl-6- [2- (1,1,7,7-tetramethyl) -2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl] -4H-pyran-4-ylidene} propanedinitrile (abbreviation: DCJTI), 2- {2- tert-Butyl-6- [2- (1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl] -4H- Piran-4-i Den} propanedinitrile (abbreviation: DCJTB), 2- (2,6-bis {2- [4- (dimethylamino) phenyl] ethenyl} -4H-pyran-4-ylidene) propanedinitrile (abbreviation: BisDCM) 2- {2,6-bis [2- (8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolidine-9- Yl) ethenyl] -4H-pyran-4-ylidene} propanedinitrile (abbreviation: BisDCJTM). Examples of the phosphorescent material include bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) tetrakis (1-pyrazolyl) borate (abbreviation: FIr6), and the like. , Bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: FIrpic), bis [2- (3 ′, 5′-bistrifluoromethylphenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4 ′, 6 ′ - difluorophenyl) pyridinato -N, C ^{2 ']} iridium (III) acetylacetonate (abbreviation: FIracac), emission wavelength 500 nm (green Light) or tris (2-phenylpyridinato) iridium (III) (abbreviation: Ir _(ppy) 3), bis (2-phenylpyridinato) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), tris (acetylacetonato) (monophenanthroline) terbium (III) (abbreviation: Tb (acac) ₃ (Phen)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation) : Ir (bzq) ₂ (acac)), bis (2,4-diphenyl-1,3-oxazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)) Bis [2- (4′-perfluorophenylphenyl) pyridinato] iridium (III) acetylacetona (Abbreviation: Ir (p-PF-ph) ₂ (acac)), bis (2-phenylbenzothiazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (Acac)), bis [2- (2′-benzo [4,5-α] thienyl) pyridinato-N, C ^{3 ′} ] iridium (III) acetylacetonate (abbreviation: Ir (btp) ₂ (acac)) Bis (1-phenylisoquinolinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (piq) ₂ (acac)), (acetylacetonato) bis [2,3-bis (4 -Fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (acac)), (acetylacetonato) bis (2,3,5-triphenylpyrazinato) Iridium (III) (abbreviation: Ir (tppr) ₂ (acac)), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin platinum (II) (abbreviation: PtOEP), Tris (1,3-diphenyl-1,3-propanedionate) (monophenanthroline) europium (III) (abbreviation: Eu (DBM) ₃ (Phen)), tris [1- (2-thenoyl) -3,3 , 3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu (TTA) ₃ (Phen)) and the like. What is necessary is just to select in consideration of the luminescent color in each light emitting element from the above materials or other known materials.

In the case of using a host material, for example, tris (8-quinolinolato) aluminum (III) (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (III) (abbreviation: Almq ₃ ), bis (10-hydroxy) Benzo [h] quinolinato) beryllium (II) (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (III) (abbreviation: BAlq), bis (8-quinolinolato) Zinc (II) (abbreviation: Znq), bis [2- (2-benzoxazolyl) phenolato] zinc (II) (abbreviation: ZnPBO), bis [2- (2-benzothiazolyl) phenolato] zinc (II) ( Abbreviations: ZnBTZ) and other metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl)- 1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 2,2 ′, 2 ″- (1,3,5-benzenetriyl) tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 9- [4- (5 -Phenyl-1,3,4-oxadiazol-2-yl) phenyl] -9H-carbazole (abbreviation: CO11) and other heterocyclic compounds, NPB (or α-NPD), TPD, BSPB and other fragrances Amine compounds. In addition, condensed polycyclic aromatic compounds such as anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo [g, p] chrysene derivatives can be given. Specifically, 9,10-diphenylanthracene (abbreviation: DPAnth) N, N-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: CzA1PA), 4- (10-phenyl-9-anthryl) triphenyl Amine (abbreviation: DPhPA), 4- (9H-carbazol-9-yl) -4 ′-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), N, 9-diphenyl-N- [4 -(10-phenyl-9-anthryl) phenyl] -9H-carbazol-3-amine (abbreviation: PCAPA), N, 9-diphenyl-N- {4- [4- (10-phenyl-9-anthryl) phenyl] phenyl} -9H-carbazol-3-amine (abbreviation: PCAPBA), N, 9-diphenyl-N- ( 9,10-diphenyl-2-anthryl) -9H-carbazol-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy-5,11-diphenylchrysene, N, N, N ′, N ′, N ″ , N ″, N ′ ″, N ′ ″-octaphenyldibenzo [g, p] chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9- [4- (10-phenyl- 9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 3,6-diphenyl-9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: DPCzPA), 9 10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di (2-naphthyl) ) Anthracene (abbreviation: t-BuDNA), 9,9′-bianthryl (abbreviation: BANT), 9,9 ′-(stilbene-3,3′-diyl) diphenanthrene (abbreviation: DPNS), 9,9′- (Stilbene-4,4′-diyl) diphenanthrene (abbreviation: DPNS2), 3,3 ′, 3 ″-(benzene-1,3,5-triyl) tripylene (abbreviation: TPB3), and the like can be given. . Among these and known materials, each of the layers has a material having an energy gap (triplet energy) larger than the energy gap (triplet energy in the case of phosphorescence) of each of the luminescent center materials dispersed. A substance that exhibits transportability that matches the transportability that should be provided may be selected.

The electron transport layer 1704 is a layer containing a substance having a high electron transport property. For example, tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), Bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), and the like, a layer made of a metal complex having a quinoline skeleton or a benzoquinoline skeleton. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) A metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4- tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that a substance other than the above substances may be used for the electron-transport layer 1704 as long as it has a property of transporting more electrons than holes.

Further, the electron-transport layer 1704 is not limited to a single layer, and two or more layers including any of the above substances may be stacked.

Further, a layer for controlling the movement of electron carriers may be provided between the electron-transport layer 1704 and the light-emitting layer 1703. This is a layer obtained by adding a small amount of a substance having a high electron trapping property to a material having a high electron transporting property as described above. By suppressing the movement of electron carriers, the carrier balance can be adjusted. Such a configuration is very effective in suppressing problems that occur when electrons penetrate through the light emitting layer 1703 (for example, a reduction in device lifetime).

As the electron injection layer 1705, an alkali metal or an alkaline earth metal such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or a compound thereof can be used. For example, a layer made of a substance having an electron transporting property containing an alkali metal or an alkaline earth metal or a compound thereof, for example, a layer containing magnesium (Mg) in Alq can be used. Note that a structure in which an alkali metal or an alkaline earth metal is included in a layer made of a substance having an electron transporting property as the electron injection layer 1705 can efficiently inject electrons from the second electrode 105. Therefore, this is a more preferable configuration.

As a material for forming the second electrode 105, when the second electrode 105 is used as a cathode, a metal, an alloy, an electrically conductive compound having a small work function (specifically, 3.8 eV or less), and these A mixture of the above can be used. Specific examples of such cathode materials include elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, alkali metals such as lithium (Li) and cesium (Cs), and magnesium (Mg) and calcium (Ca ), Alkaline earth metals such as strontium (Sr), and alloys containing them (MgAg, AlLi), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these. However, by providing the electron injection layer 1705 between the cathode and the electron transport layer 1704, various types such as indium oxide-tin oxide containing Al, Ag, ITO, silicon, or silicon oxide can be used regardless of the work function. Any conductive material can be used as the cathode. These conductive materials can be formed using a sputtering method, a vacuum evaporation method, or the like.

In the case where the second electrode 105 is used as an anode, it is preferable to use a metal, an alloy, a conductive compound, a mixture thereof, or the like having a high work function (specifically, 4.0 eV or more). Specifically, for example, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (indium zinc oxide), tungsten oxide, and zinc oxide are used. Examples thereof include indium oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but may be formed by applying a sol-gel method or the like. For example, indium oxide-zinc oxide can be formed by a sputtering method using a target in which 1 wt% or more and 20 wt% or less of zinc oxide is added to indium oxide. In addition, indium oxide (IWZO) containing tungsten oxide and zinc oxide uses a target containing 0.5 wt% to 5 wt% of tungsten oxide and 0.1 wt% to 1 wt% of zinc oxide with respect to indium oxide. It can be formed by sputtering. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( Pd), or a nitride of a metal material (for example, titanium nitride). Further, by providing the above-described composite material in contact with the anode, the material of the electrode can be selected regardless of the work function.

Note that the above-described EL layer 104 may have a structure in which a plurality of light-emitting units including at least the light-emitting layer 1703 are stacked between the first electrode 101 and the second electrode 105 as illustrated in FIG. good. In this case, a charge generation layer 803 is preferably provided between the stacked first light emitting unit 800 and second light emitting unit 801. The charge generation layer 803 can be formed using the above-described composite material. The charge generation layer 803 may have a stacked structure of a layer formed using a composite material and a layer formed using another material. In this case, as a layer made of another material, a layer containing an electron donating substance and a substance having a high electron transporting property, a layer made of a transparent conductive film, or the like can be used. A light-emitting element having such a structure is unlikely to cause problems such as energy transfer and quenching between light-emitting units, and a light-emitting element having both high light emission efficiency and a long lifetime by expanding the range of material selection. Easy. It is also easy to obtain phosphorescence emission with one light emitting unit and fluorescence emission with the other. Note that the light-emitting unit includes a light-emitting layer, an electron transport layer including a substance having a high electron transport property, or a hole transport layer including a substance having a high hole transport property, an electron injection layer including a substance having a high electron inject property, and a hole injection. The functional layers may be combined as appropriate, such as a hole injection layer containing a highly conductive substance and a bipolar layer containing a bipolar (substance with a high electron and hole transporting substance) substance. These functional layers are not essential except for the light emitting layer, and may include other functional layers other than those described above. Since the detailed description of these layers has been described above, repeated description is omitted.

In particular, the structure in FIG. 5B is preferable when white light emission is obtained, and a high-quality light-emitting device or lighting device can be obtained by combining with the structure in FIGS. 1 and 5A.

(Embodiment 5)
In this embodiment, a lighting device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 6 illustrates an example in which lighting devices formed by applying one embodiment of the present invention are provided in a ceiling portion and a wall surface portion in a room. The light-emitting device of one embodiment of the present invention can be used for a large-area lighting device in addition to the ceiling-mounted lighting device 1001.

For example, wall surface lighting devices 1021, 1022, and 1023 can be provided.

A lighting device formed using one embodiment of the present invention can provide a lighting device with high reliability, low power consumption, high quality, and low cost.

(Embodiment 6)
In this embodiment, an example in which the lighting device of one embodiment of the present invention has a display function will be described with reference to FIGS.

FIG. 7 illustrates an example in which a display region 1024 which is a display device is provided in part of the lighting device 1022 in FIG. The display region 1024 can display pixels by miniaturizing the light-emitting element and the reflective element to form pixels. Each of the light-emitting element and the reflective element included in the display region 1024 can emit light that can be used as a lighting device, that is, has a display function and a lighting function.

As one embodiment of the present invention, FIG. 8 is a flowchart showing an image in the display area 1024 when it is determined that the illuminance in the room should be increased based on the input information P1. As an aspect using the flowchart, an example in which an advertisement video is projected on a wall surface when no video is output from the image output device 1003 indoors can be given.

In FIG. 8, T6-1 and T6-2 are common in the flow shown in FIG. 3, but an image is displayed on the display area 1024 after T6-2 and then at T-7. In the display area 1024, the display brightness may be controlled in the same manner as the lighting device 1022 based on the detection information P2.

(Embodiment 7)
In this embodiment, a means for adjusting the illuminance in the room included in the lighting device of one embodiment of the present invention will be described with reference to FIGS. In particular, a method of manually controlling the illuminance will be described.

As one embodiment of the present invention, FIG. 9A is a flowchart in the case of manually controlling the illuminance in the room. FIG. 9A illustrates an example in which control is performed using the controller 1031 illustrated in FIG.

FIG. 9B illustrates a controller 1031 included in the lighting device of one embodiment of the present invention. As an example, the controller 1031 may be in the input unit 240 in FIG. The controller 1031 includes a switch 1032 that selects which of the light emitting element and the reflective element is controlled. It also has a controller 1033 for adjusting the illuminance in the room.

<< First Step >>
In the first step, the illumination means to be controlled is selected (see T1 in FIG. 9A). That is, it is manually selected by the switch 1032 which illumination means to be used, a light emitting element or a reflecting element. If the light emitting element is selected, the process proceeds to step 2-1; if the reflective element is selected, the process proceeds to step 2-2.

<< Steps 2-1 and 2-2 >>
In the first step, light is emitted into the room by the illumination means selected by the switch 1032. When it is desired to adjust the illuminance in the room, the process proceeds to step 3-1 when the light emitting element is selected, and to step 3-2 when the reflective element is selected. If there is no need to adjust the illuminance in the room, the process ends.

<< Steps 3-1 and 3-2 >>
In the first step, the controller 1033 adjusts the output of the room illuminance by the illumination means selected by the switch 1032. When the light emitting element is selected, the controller 1033 adjusts the brightness of light emitted from the light emitting element. When a reflective element is selected, the reflectance is light.

In one embodiment of the present invention, a lighting unit different from the lighting unit selected in the first step sets light irradiation to the room to zero. Alternatively, the illumination unit different from the illumination unit selected in the first step may set the irradiation of light into the room immediately before.

The lighting device of one embodiment of the present invention may include the controller 1036 illustrated in FIG. The controller 1036 includes a controller 1037 that adjusts the illuminance in the room by using the light emitting element. Moreover, it has the controller 1038 which adjusts indoor illumination intensity with a reflective element. By using such a controller 1036, the brightness of light emitted from the light emitting element and the reflectance of the reflecting element can be manually controlled independently.

Although an example of a lighting device including the controller 1031 or the controller 1036 is described in this embodiment, this may be used in combination with the use of the arithmetic device 210. In other words, the lighting device may be normally controlled by the arithmetic device 210, and the lighting device may be controlled by the controller 1031 or the controller 1036 in preference to the arithmetic device 210 when desired.

Alternatively, the lighting device of one embodiment of the present invention may include the controller 1031 or the controller 1036 and the arithmetic device 210 not included. At this time, the lighting device is always controlled manually.

(Embodiment 8)
In this embodiment, a structure of a display panel 700 that can be used for the display region 1024 described in Embodiment 6 is described with reference to FIGS.

FIG. 10 is a block diagram illustrating a structure of a display device of one embodiment of the present invention. The display device has a display panel.

FIG. 11 is a block diagram illustrating a structure of a display panel of a display device of one embodiment of the present invention. FIG. 11 is a block diagram illustrating a configuration different from the configuration shown in FIG.

FIG. 12 illustrates a structure of a display panel that can be used for the display device of one embodiment of the present invention. 12A is a top view of the display panel, and FIG. 12B is a top view illustrating part of the pixels of the display panel illustrated in FIG. FIG. 12C is a schematic diagram illustrating the structure of the pixel illustrated in FIG.

13 and 14 are cross-sectional views illustrating the structure of the display panel. 13A is a cross-sectional view taken along cutting line X1-X2, cutting line X3-X4, and cutting line X5-X6 in FIG. 12A, and FIG. 13B is a partial view of FIG. It is a figure explaining.

14A is a cross-sectional view taken along cutting lines X7-X8 and X9-X10 in FIG. 12A, and FIG. 14B is a diagram for explaining a part of FIG. 14A.

15A is a bottom view illustrating part of the pixels of the display panel illustrated in FIG. 12B, and FIG. 15B is illustrated with a part of the structure illustrated in FIG. 15A omitted. FIG.

FIG. 16 is a circuit diagram illustrating a structure of a pixel circuit included in the display panel of one embodiment of the present invention.

FIG. 17 is a schematic diagram illustrating the shape of a reflective film that can be used for a pixel of a display panel.

In the present specification, a variable having an integer value of 1 or more may be used for the sign. For example, (p) including a variable p that takes an integer value of 1 or more may be used as a part of a code that identifies any of the maximum p components. Further, for example, a variable m that takes an integer value of 1 or more and (m, n) including a variable n may be used as part of a code that identifies any of the maximum m × n components.

<Configuration Example of Display Panel 1. >
A display panel 700 described in this embodiment includes a display region 231 (see FIG. 10). In addition, the display panel 700 can include a drive circuit GD or a drive circuit SD.

In addition, the display panel can include a plurality of driver circuits. For example, the display panel 700B includes a drive circuit GDA and a drive circuit GDB (see FIG. 11).

<< Display area 231 >>
The display region 231 is scanned with a group of a plurality of pixels 702 (i, 1) to 702 (i, n) and another group of a plurality of pixels 702 (1, j) to 702 (m, j). Line G1 (i) (see FIG. 10, FIG. 15 or FIG. 16). In addition, the scanning line G2 (i), the wiring CSCOM, the third conductive film ANO, and the signal line S2 (j) are included. Note that i is an integer of 1 to m, j is an integer of 1 to n, and m and n are integers of 1 or more.

A group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes a pixel 702 (i, j), and a group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes Arranged in the row direction (direction indicated by arrow R1 in the figure).

The other group of the plurality of pixels 702 (1, j) to 702 (m, j) includes the pixel 702 (i, j), and the other group of the plurality of pixels 702 (1, j) to 702 (m , J) are arranged in a column direction (direction indicated by an arrow C1 in the drawing) intersecting the row direction.

The scan line G1 (i) and the scan line G2 (i) are electrically connected to a group of the plurality of pixels 702 (i, 1) to 702 (i, n) arranged in the row direction.

Another group of the plurality of pixels 702 (1, j) to 702 (m, j) arranged in the column direction is electrically connected to the signal line S1 (j) and the signal line S2 (j). .

<< Drive circuit GD >>
The drive circuit GD has a function of supplying a selection signal based on the control information.

For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher is provided based on the control information. Thereby, a moving image can be displayed smoothly.

For example, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute based on the control information. Thereby, a still image can be displayed in a state where flicker is suppressed.

For example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal and the frequency with which the drive circuit GDB supplies the selection signal can be different. Specifically, the selection signal can be supplied to the area where the moving image is smoothly displayed at a higher frequency than the area where the still image is displayed with the flicker suppressed.

<< Drive circuit SD, drive circuit SD1, drive circuit SD2 >>
The drive circuit SD includes a drive circuit SD1 and a drive circuit SD2. The drive circuit SD1 has a function of supplying an image signal based on the information V11, and the drive circuit SD2 has a function of supplying an image signal based on the information V12 (see FIG. 10).

The drive circuit SD1 has a function of generating an image signal to be supplied to a pixel circuit that is electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, a liquid crystal display element can be driven.

The drive circuit SD2 has a function of generating an image signal to be supplied to a pixel circuit that is electrically connected to another display element that performs display using a method different from that of one display element. For example, an organic EL element can be driven.

For example, various sequential circuits such as a shift register can be used for the drive circuit SD.

For example, an integrated circuit in which the drive circuit SD1 and the drive circuit SD2 are integrated can be used for the drive circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used for the drive circuit SD.

For example, an integrated circuit can be implemented as a terminal using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film.

<Pixel configuration example>
The pixel 702 (i, j) includes the first display element 750 (i, j), the second display element 550 (i, j), and part of the functional layer 520 (FIG. 12C and FIG. 13). (See (A) and FIG. 14 (A)).

<Functional layer>
The functional layer 520 includes a first conductive film, a second conductive film, an insulating film 501C, and a pixel circuit 530 (i, j) (see FIGS. 13A and 13B). . The functional layer 520 includes an insulating film 521, an insulating film 528, an insulating film 518, and an insulating film 516.

Note that the functional layer 520 includes a region sandwiched between the substrate 570 and the substrate 770.

<< Insulating film 501C >>
The insulating film 501C includes a region sandwiched between the first conductive film and the second conductive film, and the insulating film 501C includes an opening 591A (see FIG. 14A).

<< First conductive film >>
For example, the first electrode 751 (i, j) of the first display element 750 (i, j) can be used for the first conductive film. The first conductive film is electrically connected to the first electrode 751 (i, j).

<< Second conductive film >>
For example, the conductive film 512B can be used for the second conductive film. The second conductive film includes a region overlapping with the first conductive film. The second conductive film is electrically connected to the first conductive film in the opening 591A. By the way, the first conductive film electrically connected to the second conductive film in the opening 591A provided in the insulating film 501C can be referred to as a through electrode.

The second conductive film is electrically connected to the pixel circuit 530 (i, j). For example, a conductive film functioning as a source electrode or a drain electrode of a transistor used for the switch SW1 of the pixel circuit 530 (i, j) can be used for the second conductive film.

<Pixel circuit>
The pixel circuit 530 (i, j) has a function of driving the first display element 750 (i, j) and the second display element 550 (i, j) (see FIG. 16).

Thereby, for example, using a pixel circuit that can be formed using the same process, the first display element and the second display element that displays using a method different from the first display element, Can be driven. Specifically, power consumption can be reduced by using a reflective display element as the first display element. Alternatively, an image can be favorably displayed with high contrast in an environment where the outside light is bright. Alternatively, an image can be favorably displayed in a dark environment by using the second display element that emits light. Alternatively, by using an insulating film, diffusion of impurities between the first display element and the second display element or between the first display element and the pixel circuit can be suppressed. As a result, a novel display device that is highly convenient or reliable can be provided.

A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

For example, one or more transistors can be used for the switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, and a plurality of transistors connected in combination of series and parallel can be used for one switch.

For example, the pixel circuit 530 (i, j) includes the signal line S1 (j), the signal line S2 (j), the scanning line G1 (i), the scanning line G2 (i), the wiring CSCOM, and the third conductive film ANO. They are electrically connected (see FIG. 16). Note that the conductive film 512A is electrically connected to the signal line S1 (j) (see FIGS. 14A and 16).

The pixel circuit 530 (i, j) includes a switch SW1 and a capacitor C11 (see FIG. 16).

Pixel circuit 530 (i, j) includes switch SW2, transistor M, and capacitor C12.

For example, a transistor including a gate electrode electrically connected to the scan line G1 (i) and a first electrode electrically connected to the signal line S1 (j) can be used for the switch SW1. .

The capacitor C11 includes a first electrode that is electrically connected to the second electrode of the transistor used for the switch SW1, and a second electrode that is electrically connected to the wiring CSCOM.

For example, a transistor including a gate electrode electrically connected to the scan line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2. .

The transistor M includes a gate electrode that is electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode that is electrically connected to the third conductive film ANO.

Note that a transistor including a conductive film provided so that a semiconductor film is interposed between a gate electrode and the gate electrode can be used for the transistor M. For example, a conductive film that is electrically connected to a wiring that can supply the same potential as the gate electrode of the transistor M can be used for the conductive film.

The capacitor C12 includes a first electrode that is electrically connected to the second electrode of the transistor used for the switch SW2, and a second electrode that is electrically connected to the first electrode of the transistor M. .

Note that the first electrode of the first display element 750 (i, j) is electrically connected to the second electrode of the transistor used for the switch SW1. In addition, the second electrode of the first display element 750 (i, j) is electrically connected to the wiring VCOM1. Accordingly, the first display element 750 can be driven.

In addition, the third electrode 551 (i, j) of the second display element 550 (i, j) is electrically connected to the second electrode of the transistor M, and the second display element 550 (i, j). The fourth electrode 552 is electrically connected to the fourth conductive film VCOM2. Accordingly, the second display element 550 (i, j) can be driven.

<< First display element 750 (i, j) >>
For example, a display element having a function of controlling reflection or transmission of light can be used for the first display element 750 (i, j). Specifically, a reflective liquid crystal display element can be used for the first display element 750 (i, j). Alternatively, a shutter-type MEMS display element or the like can be used. By using a reflective display element, power consumption of the display panel can be suppressed.

The first display element 750 (i, j) includes a first electrode 751 (i, j), a second electrode 752, and a layer 753 containing a liquid crystal material. The second electrode 752 is disposed so that an electric field for controlling the alignment of the liquid crystal material is formed between the second electrode 752 and the first electrode 751 (i, j) (FIGS. 13A and 14A). reference).

Note that the first display element 750 (i, j) includes an alignment film AF1 and an alignment film AF2. The alignment film AF2 includes a region in which a layer 753 containing a liquid crystal material is sandwiched between the alignment film AF1.

<< Second display element 550 (i, j) >>
For example, a display element having a function of emitting light can be used for the second display element 550 (i, j). Specifically, an organic EL element or the like can be used.

The second display element 550 (i, j) has a function of emitting light toward the insulating film 501C (see FIG. 13A).

The second display element 550 (i, j) is disposed so as to be visible in a part of a range where the display using the first display element 750 (i, j) can be visually recognized. For example, the direction in which external light is incident and reflected on the first display element 750 (i, j) that displays the image information by controlling the intensity of the reflected external light is indicated by a dashed arrow in the drawing (FIG. 14). (See (A)). The direction in which the second display element 550 (i, j) emits light to a part of the range where the display using the first display element 750 (i, j) can be visually recognized is indicated by a solid arrow in the drawing. (See FIG. 13A).

Thereby, the display using the 2nd display element can be visually recognized in a part of field which can visually recognize the display using the 1st display element. Alternatively, the user can visually recognize the display without changing the posture of the display panel. As a result, a novel display panel that is highly convenient or reliable can be provided.

The second display element 550 (i, j) includes a third electrode 551 (i, j), a fourth electrode 552, and a layer 553 (j) containing a light-emitting material (FIG. 13). (See (A)).

The fourth electrode 552 includes a region overlapping with the third electrode 551 (i, j).

The layer 553 (j) containing a light-emitting material includes a region sandwiched between the third electrode 551 (i, j) and the fourth electrode 552.

The third electrode 551 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522. Note that the third electrode 551 (i, j) is electrically connected to the third conductive film ANO, and the fourth electrode 552 is electrically connected to the fourth conductive film VCOM2 (FIG. 16). reference).

<Interlayer film>
In addition, the display panel described in this embodiment includes an intermediate film 754A, an intermediate film 754B, and an intermediate film 754C.

The intermediate film 754A includes a region in which the first conductive film is sandwiched between the intermediate film 501C and the intermediate film 754A includes a region in contact with the first electrode 751 (i, j). The intermediate film 754B includes a region in contact with the conductive film 511B. The intermediate film 754C includes a region in contact with the conductive film 511C.

<< Insulating film 501A >>
In addition, the display panel described in this embodiment includes an insulating film 501A (see FIG. 13A).

The insulating film 501A includes a first opening 592A, a second opening 592B, and an opening 592C (see FIG. 13A or FIG. 14A).

The first opening 592A includes a region overlapping with the intermediate film 754A and the first electrode 751 (i, j) or a region overlapping with the intermediate film 754A and the insulating film 501C.

The second opening 592B includes a region overlapping with the intermediate film 754B and the conductive film 511B.

The opening 592C includes a region overlapping with the intermediate film 754C and the conductive film 511C.

The insulating film 501A includes a region in which the insulating film 501C is sandwiched between the insulating film 501B and the conductive film 511B. The insulating film 501A is in contact with the conductive film 511B in the opening 591B of the insulating film 501C. The insulating film 501A is in contact with the conductive film 511C in the opening 591C of the insulating film 501C.

The insulating film 501A includes a region sandwiched between the intermediate film 754A and the insulating film 501C along the peripheral edge of the first opening 592A, and the insulating film 501A extends along the peripheral edge of the second opening 592B. A region sandwiched between the intermediate film 754B and the conductive film 511B is provided.

<< Insulating Film 521, Insulating Film 528, Insulating Film 518, Insulating Film 516, etc. >>
The insulating film 521 includes a region sandwiched between the pixel circuit 530 (i, j) and the second display element 550 (i, j).

The insulating film 528 is provided between the insulating film 521 and the substrate 570 and includes an opening in a region overlapping with the second display element 550 (i, j).

The insulating film 528 formed along the periphery of the third electrode 551 (i, j) prevents a short circuit between the third electrode 551 (i, j) and the fourth electrode.

The insulating film 518 includes a region sandwiched between the insulating film 521 and the pixel circuit 530 (i, j).

The insulating film 516 includes a region sandwiched between the insulating film 518 and the pixel circuit 530 (i, j).

<Terminals, etc.>
In addition, the display panel described in this embodiment includes a terminal 519B and a terminal 519C.

The terminal 519B includes a conductive film 511B and an intermediate film 754B, and the intermediate film 754B includes a region in contact with the conductive film 511B. The terminal 519B is electrically connected to the signal line S1 (j), for example.

The terminal 519C includes a conductive film 511C and an intermediate film 754C, and the intermediate film 754C includes a region in contact with the conductive film 511C. The conductive film 511C is electrically connected to, for example, the wiring VCOM1.

The conductive material CP is sandwiched between the terminal 519C and the second electrode 752, and has a function of electrically connecting the terminal 519C and the second electrode 752. For example, conductive particles can be used for the conductive material CP.

<Substrate>
In addition, the display panel described in this embodiment includes a substrate 570 and a substrate 770.

The substrate 770 includes a region overlapping with the substrate 570. The substrate 770 includes a region that sandwiches the functional layer 520 with the substrate 570.

<< bonding layer, sealing material, structure, etc. >>
In addition, the display panel described in this embodiment includes a bonding layer 505, a sealing material 705, and a structure KB1.

The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570 and has a function of bonding the functional layer 520 and the substrate 570 together.

The sealing material 705 includes a region sandwiched between the functional layer 520 and the substrate 770 and has a function of bonding the functional layer 520 and the substrate 770 together.

The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770.

<Functional membrane, etc.>
In addition, the display panel described in this embodiment includes a light-blocking film BM, an insulating film 771, a functional film 770P, and a functional film 770D. Further, it has a colored film CF1 and a colored film CF2.

The light shielding film BM includes an opening in a region overlapping with the first display element 750 (i, j). The coloring film CF2 is provided between the insulating film 501C and the second display element 550 (i, j) and includes a region overlapping with the opening 751H (see FIG. 13A).

The insulating film 771 includes a region sandwiched between the colored film CF1 and the layer 753 containing a liquid crystal material or between the light shielding film BM and the layer 753 containing a liquid crystal material. Thereby, the unevenness | corrugation based on the thickness of colored film CF1 can be made flat. Alternatively, impurity diffusion from the light-blocking film BM, the coloring film CF1, or the like to the layer 753 containing a liquid crystal material can be suppressed.

The functional film 770P includes a region overlapping with the first display element 750 (i, j).

The functional film 770D includes a region overlapping with the first display element 750 (i, j). The functional film 770D is disposed so as to sandwich the substrate 770 with the first display element 750 (i, j). Thereby, for example, the light reflected by the first display element 750 (i, j) can be diffused.

<Examples of components>
The display panel 700 includes a substrate 570, a substrate 770, a structure KB1, a sealing material 705, or a bonding layer 505.

In addition, the display panel 700 includes the functional layer 520, the insulating film 521, or the insulating film 528.

The display panel 700 includes the signal line S1 (j), the signal line S2 (j), the scanning line G1 (i), the scanning line G2 (i), the wiring CSCOM, or the third conductive film ANO.

In addition, the display panel 700 includes a first conductive film or a second conductive film.

In addition, the display panel 700 includes a terminal 519B, a terminal 519C, a conductive film 511B, or a conductive film 511C.

In addition, the display panel 700 includes a pixel circuit 530 (i, j) or a switch SW1.

In addition, the display panel 700 includes the first display element 750 (i, j), the first electrode 751 (i, j), the reflective film, the opening, the layer 753 containing a liquid crystal material, or the second electrode 752. .

In addition, the display panel 700 includes the alignment film AF1, the alignment film AF2, the coloring film CF1, the coloring film CF2, the light shielding film BM, the insulating film 771, the functional film 770P, or the functional film 770D.

The display panel 700 includes the second display element 550 (i, j), the third electrode 551 (i, j), the fourth electrode 552, or a layer 553 (j) containing a light-emitting material.

In addition, the display panel 700 includes an insulating film 501A and an insulating film 501C.

In addition, the display panel 700 includes a drive circuit GD or a drive circuit SD.

<< Substrate 570 >>
A material having heat resistance high enough to withstand heat treatment in the manufacturing process can be used for the substrate 570 or the like. For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 570. Specifically, a material polished to a thickness of about 0.1 mm can be used.

For example, the areas of the sixth generation (1500 mm × 1850 mm), the seventh generation (1870 mm × 2200 mm), the eighth generation (2200 mm × 2400 mm), the ninth generation (2400 mm × 2800 mm), the tenth generation (2950 mm × 3400 mm), etc. A large glass substrate can be used for the substrate 570 or the like. Thus, a large display device can be manufactured.

An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the substrate 570 or the like. For example, an inorganic material such as glass, ceramics, or metal can be used for the substrate 570 or the like.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, or the like can be used for the substrate 570 or the like. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used for the substrate 570 or the like. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like can be used for the substrate 570 or the like. Stainless steel, aluminum, or the like can be used for the substrate 570 or the like.

For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the substrate 570 or the like. Thereby, a semiconductor element can be formed on the substrate 570 or the like.

For example, an organic material such as a resin, a resin film, or plastic can be used for the substrate 570 or the like. Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin can be used for the substrate 570 or the like.

For example, a composite material in which a film such as a metal plate, a thin glass plate, or an inorganic material is bonded to a resin film or the like can be used for the substrate 570 or the like. For example, a composite material in which a fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film can be used for the substrate 570 or the like. For example, a composite material in which a fibrous or particulate resin, an organic material, or the like is dispersed in an inorganic material can be used for the substrate 570 or the like.

In addition, a single layer material or a material in which a plurality of layers are stacked can be used for the substrate 570 or the like. For example, a material in which a base material and an insulating film that prevents diffusion of impurities contained in the base material are stacked can be used for the substrate 570 or the like. Specifically, a material in which one or a plurality of films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like that prevents diffusion of impurities contained in glass is used for the substrate 570 or the like. be able to. Alternatively, a material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like which prevents resin and diffusion of impurities that permeate the resin is stacked can be used for the substrate 570 or the like.

Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin, a resin plate, a laminated material, or the like can be used for the substrate 570 or the like.

Specifically, a material including a resin having a siloxane bond such as polyester, polyolefin, polyamide (nylon, aramid, or the like), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or silicone can be used for the substrate 570 or the like.

Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, or the like can be used for the substrate 570 or the like. Alternatively, a cycloolefin polymer (COP), a cycloolefin copolymer (COC), or the like can be used.

Further, paper, wood, or the like can be used for the substrate 570 or the like.

For example, a flexible substrate can be used for the substrate 570 or the like.

Note that a method of directly forming a transistor, a capacitor, or the like over a substrate can be used. Alternatively, for example, a method can be used in which a transistor, a capacitor, or the like is formed over a substrate for a process that has heat resistance to heat applied during the manufacturing process, and the formed transistor, capacitor, or the like is transferred to the substrate 570 or the like. Thus, for example, a transistor or a capacitor can be formed over a flexible substrate.

<< Substrate 770 >>
For example, a material having a light-transmitting property can be used for the substrate 770. Specifically, a material selected from materials that can be used for the substrate 570 can be used for the substrate 770.

For example, aluminosilicate glass, tempered glass, chemically tempered glass, sapphire, or the like can be suitably used for the substrate 770 disposed on the side close to the display panel user. Thereby, it is possible to prevent the display panel from being damaged or damaged due to use.

For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 770. Specifically, a polished substrate can be used to reduce the thickness. Accordingly, the functional film 770D can be disposed close to the first display element 750 (i, j). As a result, blurring of the image can be reduced and the image can be clearly displayed.

<< Structure KB1 >>
For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structure KB1 or the like. Thereby, a predetermined space | interval can be provided between the structures which pinch | interpose structure KB1 grade | etc.,.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or a composite material of a plurality of resins selected from these can be used for the structure KB1. Alternatively, a material having photosensitivity may be used.

<< Sealing material 705 >>
An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the sealant 705 or the like.

For example, an organic material such as a heat-meltable resin or a curable resin can be used for the sealing material 705 or the like.

For example, an organic material such as a reactive curable adhesive, a photocurable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive can be used for the sealing material 705 or the like.

Specifically, an adhesive including epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, and the like. Can be used for the sealing material 705 or the like.

<< Junction Layer 505 >>
For example, a material that can be used for the sealant 705 can be used for the bonding layer 505.

<< Insulating film 521 >>
For example, an insulating inorganic material, an insulating organic material, or an insulating composite material including an inorganic material and an organic material can be used for the insulating film 521 or the like.

Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a stacked material in which a plurality selected from these films is stacked can be used for the insulating film 521 and the like. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like, or a film including a stacked material in which a plurality selected from these films is stacked can be used for the insulating film 521 or the like.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or the like, or a laminated material or composite material of a plurality of resins selected from these can be used for the insulating film 521 and the like. Alternatively, a material having photosensitivity may be used.

Thereby, for example, steps originating from various structures overlapping with the insulating film 521 can be planarized.

<< Insulating film 528 >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 528 or the like. Specifically, a film containing polyimide with a thickness of 1 μm can be used for the insulating film 528.

<< Insulating film 501A >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501A. For example, a material having a function of supplying hydrogen can be used for the insulating film 501A.

Specifically, a material in which a material containing silicon and oxygen and a material containing silicon and nitrogen are stacked can be used for the insulating film 501A. For example, a material having a function of releasing hydrogen by heating or the like and supplying the released hydrogen to another structure can be used for the insulating film 501A. Specifically, a material having a function of releasing hydrogen taken in during the manufacturing process by heating or the like and supplying the hydrogen to another structure can be used for the insulating film 501A.

For example, a film containing silicon and oxygen formed by a chemical vapor deposition method using silane or the like as a source gas can be used for the insulating film 501A.

Specifically, a material in which a material including silicon and oxygen having a thickness of 200 nm to 600 nm and a material including silicon and nitrogen and having a thickness of about 200 nm can be used for the insulating film 501A.

<< Insulating film 501C >>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. Thereby, the diffusion of impurities into the pixel circuit or the second display element can be suppressed.

For example, a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used for the insulating film 501C.

<< Intermediate Film 754A, Intermediate Film 754B, Intermediate Film 754C >>
For example, a film having a thickness of 10 nm to 500 nm, preferably 10 nm to 100 nm can be used for the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C. Note that in this specification, the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C is referred to as an intermediate film.

For example, a material having a function of permeating or supplying hydrogen can be used for the intermediate film.

For example, a material having conductivity can be used for the intermediate film.

For example, a material having a light-transmitting property can be used for the intermediate film.

Specifically, a material containing indium and oxygen, a material containing indium, gallium, zinc and oxygen, a material containing indium, tin and oxygen, or the like can be used for the intermediate film. Note that these materials have a function of permeating hydrogen.

Specifically, a 50 nm-thick film or a 100 nm-thick film containing indium, gallium, zinc, and oxygen can be used as the intermediate film.

Note that a material in which a film functioning as an etching stopper is stacked can be used for the intermediate film. Specifically, a laminated material obtained by laminating a film having a thickness of 50 nm containing indium, gallium, zinc, and oxygen and a film having a thickness of 20 nm containing indium, tin, and oxygen in this order is used for the intermediate film. it can.

<< wiring, terminals, conductive film >>
A conductive material can be used for the wiring or the like. Specifically, a material having conductivity is formed using a signal line S1 (j), a signal line S2 (j), a scanning line G1 (i), a scanning line G2 (i), a wiring CSCOM, a third conductive film ANO, It can be used for the terminal 519B, the terminal 519C, the terminal 719, the conductive film 511B, the conductive film 511C, or the like.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring.

Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring or the like. . Alternatively, an alloy containing the above metal element can be used for the wiring or the like. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked on a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked on the titanium film and a titanium film is further formed thereon can be used for wiring or the like. .

Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring or the like.

Specifically, a film containing graphene or graphite can be used for the wiring or the like.

For example, by forming a film containing graphene oxide and reducing the film containing graphene oxide, the film containing graphene can be formed. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

For example, a film containing metal nanowires can be used for wiring or the like. Specifically, a nanowire containing silver can be used.

Specifically, a conductive polymer can be used for wiring or the like.

Note that, for example, the conductive material ACF1 can be used to electrically connect the terminal 519B and the flexible printed circuit board FPC1.

<< First conductive film, second conductive film >>
For example, a material that can be used for a wiring or the like can be used for the first conductive film or the second conductive film.

In addition, the first electrode 751 (i, j), the wiring, or the like can be used for the first conductive film.

In addition, a conductive film 512B functioning as a source electrode or a drain electrode of a transistor that can be used for the switch SW1, a wiring, or the like can be used for the second conductive film.

<< First display element 750 (i, j) >>
For example, a display element having a function of controlling reflection or transmission of light can be used for the first display element 750 (i, j). For example, a structure in which a liquid crystal element and a polarizing plate are combined or a shutter-type MEMS display element or the like can be used. Specifically, a reflective liquid crystal display element can be used for the first display element 750 (i, j). By using a reflective display element, power consumption of the display panel can be suppressed.

For example, IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, FFS (Fringe Field Switching), ASM (Axial Symmetrically Aligned Micro-cell) mode, OCB (OpticBridge) A liquid crystal element that can be driven by a driving method such as a Crystal) mode or an AFLC (Antiferroelectric Liquid Crystal) mode can be used.

In addition, for example, vertical alignment (VA) mode, specifically, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ECB (Electrically Controlled Birefringence) mode, CPB mode A liquid crystal element that can be driven by a driving method such as an (Advanced Super-View) mode can be used.

The first display element 750 (i, j) includes a first electrode, a second electrode, and a layer containing a liquid crystal material. The layer including a liquid crystal material includes a liquid crystal material whose alignment can be controlled using a voltage between the first electrode and the second electrode. For example, an electric field in a thickness direction (also referred to as a vertical direction) of a layer including a liquid crystal material or a direction intersecting with the vertical direction (also referred to as a horizontal direction or an oblique direction) can be used as an electric field for controlling the alignment of the liquid crystal material. .

<< Layer 753 containing liquid crystal material >>
For example, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used for the layer containing a liquid crystal material. Alternatively, a liquid crystal material exhibiting a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

<< First electrode 751 (i, j) >>
For example, a material used for a wiring or the like can be used for the first electrode 751 (i, j). Specifically, a reflective film can be used for the first electrode 751 (i, j). For example, a material in which a conductive film having a light-transmitting property and a reflective film having an opening are stacked can be used for the first electrode 751 (i, j).

<Reflective film>
For example, a material that reflects visible light can be used for the reflective film. Specifically, a material containing silver can be used for the reflective film. For example, a material containing silver and palladium or a material containing silver and copper can be used for the reflective film.

For example, the reflective film reflects light transmitted through the layer 753 containing a liquid crystal material. Accordingly, the first display element 750 can be a reflective liquid crystal element. Further, for example, a material having irregularities on the surface can be used for the reflective film. Thereby, incident light can be reflected in various directions to display white.

For example, the first conductive film, the first electrode 751 (i, j), or the like can be used for the reflective film.

For example, a film including a region sandwiched between the layer 753 containing a liquid crystal material and the first electrode 751 (i, j) can be used as the reflective film. Alternatively, a reflective film can be used for a film including a region in which the first electrode 751 (i, j) having a light-transmitting property is interposed between the layer 753 containing a liquid crystal material.

The reflective film has, for example, a shape in which a region that does not block the light emitted from the second display element 550 (i, j) is formed.

For example, a shape including one or a plurality of openings can be used for the reflective film.

A shape such as a polygon, a rectangle, an ellipse, a circle, or a cross can be used for the opening. In addition, an elongated stripe shape, a slit shape, or a checkered shape can be used for the opening 751H.

When the value of the ratio of the total area of the opening 751H to the total area of the non-opening is too large, the display using the first display element 750 (i, j) becomes dark.

If the ratio of the total area of the opening 751H to the total area of the non-opening is too small, the display using the second display element 550 (i, j) becomes dark. Alternatively, the reliability of the second display element 550 (i, j) may be impaired.

For example, the opening 751H of the pixel 702 (i, j + 1) adjacent to the pixel 702 (i, j) passes through the opening 751H of the pixel 702 (i, j) (the direction indicated by the arrow R1 in the drawing). (See FIG. 17A). Alternatively, for example, the opening 751H of the pixel 702 (i + 1, j) adjacent to the pixel 702 (i, j) passes through the opening 751H of the pixel 702 (i, j) in the column direction (in FIG. It is not arranged on a straight line extending in the direction shown (see FIG. 17B).

For example, the opening 751H of the pixel 702 (i, j + 2) is disposed on a straight line passing through the opening 751H of the pixel 702 (i, j) and extending in the row direction (see FIG. 17A). In addition, the opening 751H of the pixel 702 (i, j + 1) is arranged on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i, j + 2). Established.

Alternatively, for example, the opening 751H of the pixel 702 (i + 2, j) is disposed on a straight line passing through the opening 751H of the pixel 702 (i, j) and extending in the column direction (see FIG. 17B). . For example, the opening 751H of the pixel 702 (i + 1, j) is on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i + 2, j). It is arranged.

Accordingly, the second element including a region overlapping with the opening of another pixel adjacent to the one pixel can be separated from the second display element including a region overlapping with the opening of the one pixel. Alternatively, a display element that displays a color different from the color displayed by the second display element of one pixel can be provided in the second display element of another pixel adjacent to the one pixel. Alternatively, the difficulty of arranging a plurality of display elements that display different colors adjacent to each other can be reduced. As a result, a novel display panel that is highly convenient or reliable can be provided.

Note that, for example, a material having a shape in which an end portion is cut away so that a region 751E that does not block light emitted from the second display element 550 (i, j) is formed is used for the reflective film. (See FIG. 17C). Specifically, the first electrode 751 (ij) whose end is cut away so that the column direction (the direction indicated by the arrow C1 in the drawing) is shortened can be used for the reflective film.

<< Second electrode 752 >>
For example, a material having conductivity can be used for the second electrode 752. A material having a light-transmitting property with respect to visible light can be used for the second electrode 752.

For example, a conductive oxide, a metal film that is thin enough to transmit light, or a metal nanowire can be used for the second electrode 752.

Specifically, a conductive oxide containing indium can be used for the second electrode 752. Alternatively, a metal thin film with a thickness greater than or equal to 1 nm and less than or equal to 10 nm can be used for the second electrode 752. In addition, a metal nanowire containing silver can be used for the second electrode 752.

Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, zinc oxide to which aluminum is added, or the like can be used for the second electrode 752.

<< Alignment film AF1, Alignment film AF2 >>
For example, a material containing polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. Specifically, a material formed using a rubbing process or a photo-alignment technique so that the liquid crystal material is aligned in a predetermined direction can be used.

For example, a film containing soluble polyimide can be used for the alignment film AF1 or the alignment film AF2. Thereby, the temperature required when forming the alignment film AF1 can be lowered. As a result, damage to other components can be reduced when forming the alignment film AF1.

<< Colored film CF1, Colored film CF2 >>
A material that transmits light of a predetermined color can be used for the colored film CF1 or the colored film CF2. Thereby, the colored film CF1 or the colored film CF2 can be used for a color filter, for example. For example, a material that transmits blue, green, or red light can be used for the colored film CF1 or the colored film CF2. A material that transmits yellow light, white light, or the like can be used for the colored film.

Note that a material having a function of converting irradiated light into light of a predetermined color can be used for the colored film CF2. Specifically, quantum dots can be used for the colored film CF2. Thereby, display with high color purity can be performed.

<< Light shielding film BM >>
A material that prevents light transmission can be used for the light-shielding film BM. Thereby, the light shielding film BM can be used for, for example, a black matrix.

<< Insulating film 771 >>
For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771.

<< Functional film 770P, Functional film 770D >>
For example, an antireflection film, a polarizing film, a retardation film, a light diffusion film, a light collecting film, or the like can be used for the functional film 770P or the functional film 770D.

Specifically, a film containing a dichroic dye can be used for the functional film 770P or the functional film 770D. Alternatively, a material having a columnar structure including an axis along a direction intersecting the surface of the base material can be used for the functional film 770P or the functional film 770D. Thereby, light can be easily transmitted in a direction along the axis and can be easily scattered in other directions.

In addition, an antistatic film that suppresses adhesion of dust, a water-repellent film that makes it difficult to adhere dirt, a hard coat film that suppresses generation of scratches due to use, and the like can be used for the functional film 770P.

Specifically, a circularly polarizing film can be used for the functional film 770P. In addition, a light diffusion film can be used for the functional film 770D.

<< Second display element 550 (i, j) >>
For example, a light-emitting element can be used for the second display element 550 (i, j). Specifically, an organic electroluminescent element, an inorganic electroluminescent element, a light-emitting diode, or the like can be used for the second display element 550 (i, j).

For example, a light-emitting organic compound can be used for the layer 553 (j) containing a light-emitting material. More specifically, the light-emitting element described in Embodiment 4 can be used.

For example, a quantum dot can be used for the layer 553 (j) containing a light-emitting material. Thereby, the half value width is narrow and it is possible to emit brightly colored light.

For example, a laminated material laminated so as to emit blue light, a laminated material laminated so as to emit green light, or a laminated material laminated so as to emit red light, etc. Can be used for the layer 553 (j) containing N.

For example, a strip-shaped stacked material that is long in the column direction along the signal line S2 (j) can be used for the layer 553 (j) containing a light-emitting material.

For example, a stacked material stacked so as to emit white light can be used for the layer 553 (j) including a light-emitting material. Specifically, a layer containing a luminescent material including a fluorescent material that emits blue light, a layer containing a material other than a fluorescent material that emits green and red light, or a fluorescent material that emits yellow light A layered material in which a layer including any of the above materials is stacked can be used for the layer 553 (j) including a light-emitting material.

For example, a material that can be used for a wiring or the like can be used for the third electrode 551 (i, j).

For example, a material that transmits visible light and is selected from materials that can be used for wiring and the like can be used for the third electrode 551 (i, j).

Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used for the third electrode 551 (i , J). Alternatively, a metal film that is thin enough to transmit light can be used for the third electrode 551 (i, j). Alternatively, a metal film that transmits part of light and reflects the other part of light can be used for the third electrode 551 (i, j). Accordingly, the microresonator structure can be provided in the second display element 550 (i, j). As a result, light with a predetermined wavelength can be extracted more efficiently than other light.

For example, a material that can be used for a wiring or the like can be used for the fourth electrode 552. Specifically, a material having reflectivity with respect to visible light can be used for the fourth electrode 552.

<< Drive circuit GD >>
Various sequential circuits such as a shift register can be used for the drive circuit GD. For example, a transistor MD, a capacitor, or the like can be used for the drive circuit GD. Specifically, a transistor that can be used for the switch SW1 or a transistor including a semiconductor film that can be formed in the same process as the transistor M can be used.

For example, a different structure from the transistor that can be used for the switch SW1 can be used for the transistor MD. Specifically, a transistor including the conductive film 524 can be used for the transistor MD (see FIG. 13B).

Note that the same structure as the transistor M can be used for the transistor MD.

<Transistor>
For example, a semiconductor film that can be formed in the same process can be used for a transistor in a driver circuit and a pixel circuit.

For example, a bottom-gate transistor, a top-gate transistor, or the like can be used as a driver circuit transistor or a pixel circuit transistor.

By the way, for example, a bottom-gate transistor production line using amorphous silicon as a semiconductor can be easily modified to a bottom-gate transistor production line using an oxide semiconductor as a semiconductor. For example, a top gate type production line using polysilicon as a semiconductor can be easily modified to a top gate type transistor production line using an oxide semiconductor as a semiconductor. Both modifications can make effective use of existing production lines.

For example, a transistor in which a semiconductor containing a Group 14 element is used for a semiconductor film can be used. Specifically, a semiconductor containing silicon can be used for the semiconductor film. For example, a transistor in which single crystal silicon, polysilicon, microcrystalline silicon, amorphous silicon, or the like is used for a semiconductor film can be used.

Note that the temperature required for manufacturing a transistor using polysilicon as a semiconductor is lower than that of a transistor using single crystal silicon as a semiconductor.

In addition, the field effect mobility of a transistor using polysilicon as a semiconductor is higher than that of a transistor using amorphous silicon as a semiconductor. Thereby, the aperture ratio of the pixel can be improved. In addition, a pixel provided with extremely high definition, a gate driver circuit, and a source driver circuit can be formed over the same substrate. As a result, the number of parts constituting the electronic device can be reduced.

The reliability of a transistor using polysilicon as a semiconductor is superior to a transistor using amorphous silicon as a semiconductor.

In addition, a transistor using a compound semiconductor can be used. Specifically, a semiconductor containing gallium arsenide can be used for the semiconductor film.

In addition, a transistor using an organic semiconductor can be used. Specifically, an organic semiconductor containing polyacenes or graphene can be used for the semiconductor film.

For example, a transistor in which an oxide semiconductor is used for a semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

As an example, a transistor whose leakage current in an off state is smaller than that of a transistor using amorphous silicon as a semiconductor film can be used. Specifically, a transistor in which an oxide semiconductor is used for a semiconductor film can be used.

Accordingly, as compared with a pixel circuit using a transistor using amorphous silicon as a semiconductor film, the time during which the pixel circuit can hold an image signal can be lengthened. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced. In addition, power consumption associated with driving can be reduced.

For example, a transistor including the semiconductor film 508, the conductive film 504, the conductive film 512A, and the conductive film 512B can be used for the switch SW1 (see FIG. 14B). Note that the insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504.

The conductive film 504 includes a region overlapping with the semiconductor film 508. The conductive film 504 has a function of a gate electrode. The insulating film 506 has a function of a gate insulating film.

The conductive films 512A and 512B are electrically connected to the semiconductor film 508. The conductive film 512A has one of the function of the source electrode and the function of the drain electrode, and the conductive film 512B has the other of the function of the source electrode and the function of the drain electrode.

In addition, a transistor including the conductive film 524 can be used for a transistor in a driver circuit or a pixel circuit (see FIG. 13B). The conductive film 524 includes a region in which the semiconductor film 508 is sandwiched between the conductive film 504 and the conductive film 504. Note that the insulating film 516 includes a region sandwiched between the conductive film 524 and the semiconductor film 508. For example, the conductive film 524 is electrically connected to a wiring that supplies the same potential as the conductive film 504.

For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used for the conductive film 504. Note that the film containing copper includes a region between which the film containing tantalum and nitrogen is sandwiched between the film containing copper.

For example, a material in which a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen are stacked can be used for the insulating film 506. Note that the film containing silicon and nitrogen includes a region between the semiconductor film 508 and the film containing silicon, oxygen, and nitrogen.

For example, a 25-nm-thick film containing indium, gallium, and zinc can be used for the semiconductor film 508.

For example, a conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order as the conductive film 512A or the conductive film 512B. Can be used. Note that the film containing tungsten includes a region in contact with the semiconductor film 508.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

ANO conductive film FPC1 flexible printed circuit board SW1 switch SW2 switch VCOM2 conductive film 100 substrate 101 first electrode 102 auxiliary electrode 103 oxide layer 104 EL layer 105 second electrode 210 arithmetic unit 211 arithmetic unit 214 transmission path 215 input / output interface 220 Input / output device 230 Irradiation unit 231 Display region 235 Reflection unit 240 Input unit 250 Detection unit 501A Insulating film 501C Insulating film 504 Conductive film 505 Bonding layer 506 Insulating film 508 Semiconductor film 511B Conductive film 511C Conductive film 512B Conductive film 512B Conductive film 516 Insulating Film 518 Insulating film 519B Terminal 519C Terminal 520 Functional layer 521 Insulating film 522 Connection portion 524 Conductive film 528 Insulating film 530 Pixel circuit 550 Display element 551 Electrode 552 Electrode 553 Layer 570 containing a light emitting material Substrate 591A Opening 591B Opening 591C Opening 592A Opening 592A Opening 592B Opening 592C Opening 700 Display Panel 700B Display Panel 702 Pixel 705 Sealing Material 719 Terminal 750 Display Element 751 First Electrode 751E Region 751H Opening 752 Second Electrode 753 Layer 754A containing liquid crystal material Intermediate film 754B Intermediate film 754C Intermediate film 770 Substrate 770D Functional film 770P Functional film 771 Insulating film 800 First light emitting unit 801 Second light emitting unit 803 Charge generation layer 1001 Lighting device 1002 Region 1003 Image Output device 1004 Screen 1005 Illumination 1006 Window 1010 Light emitting element 1011 Reflective element 1021 Illumination device 1022 Illumination device 1023 Illumination device 1024 Display area 1031 Controller 1032 Switch 1033 Control Over La 1036 Controller 1037 Controller 1038 Controller 1701 hole injection layer 1702 a hole transport layer 1703 emitting layer 1704 electron transporting layer 1705 electron injection layer

Claims (11)

A self-luminous dimming means, a reflective dimming means,
An illuminance measuring means and an arithmetic unit;
The arithmetic device controls the luminance of the self-luminous light control means and the reflectance of the reflective light control means,
The lighting device having a function of performing the control based on information obtained from the illuminance measuring means. A self-luminous dimming means, a reflective dimming means,
An illuminance measuring means, an input means, and an arithmetic unit;
The arithmetic device controls the luminance of the self-luminous light control means and the reflectance of the reflective light control means,
The lighting device having a function of performing the control based on information obtained from the input unit and the illuminance measurement unit. In claim 2,
The input means has means for acquiring output information from the image output device,
The output information includes a lighting device including information that the image output device emits light. In any one of Claims 1 thru | or 3,
Have a controller,
The controller has a function of controlling the luminance of the self-luminous light control means,
The controller is a lighting device having a function of controlling a reflectance of the reflective light control means. A self-luminous dimming means, a reflective dimming means,
A controller, and
The controller has a function of controlling the luminance of the self-luminous light control means,
The controller is a lighting device having a function of controlling a reflectance of the reflective light control means. In any one of Claims 1 to 5,
The self-luminous light control means has an EL layer. In any one of Claims 1 thru | or 6,
The reflection type light control means has a liquid crystal layer. A lighting device according to any one of claims 1 to 7 and a display device,
The display device is an electronic device having a self-luminous pixel and a reflective pixel. A lighting device according to any one of claims 1 to 4 and a display device,
The display device includes a self-luminous pixel and a reflective pixel,
The arithmetic device is an electronic device that controls display brightness based on information obtained from the illuminance measurement means. In claim 9,
The self-luminous light control means has an EL layer. In claim 9 or claim 10,
The reflection-type light control means includes an electronic device having a liquid crystal layer.

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