JP2017208574A5 - - Google Patents

Claims (13)

An image sensor in which a plurality of N-type semiconductors are arranged in a P-type semiconductor having a first surface on which light is incident and a second surface opposite to the first surface,
  Of the plurality of N-type semiconductors, a first semiconductor into which light from a filter having a first spectral characteristic is incident;
  A second semiconductor that is arranged in a first direction from the first semiconductor among the plurality of N-type semiconductors, and receives light from a filter having a second spectral characteristic different from the first spectral characteristic;
  The filter is disposed in a second direction intersecting the first direction from the first semiconductor among the plurality of N-type semiconductors, and has a third spectral characteristic different from the first spectral characteristic and the second spectral characteristic. A third semiconductor on which light is incident;
  A fourth semiconductor disposed between the first semiconductor and the second semiconductor in the P-type semiconductor and extending in a direction from the first surface toward the second surface;
  A fifth semiconductor disposed between the first semiconductor and the third semiconductor in the P-type semiconductor and extending from the first surface toward the second surface than the fourth semiconductor;
An imaging device comprising: The imaging device according to claim 1, wherein the fourth semiconductor and the fifth semiconductor have an impurity concentration higher than an impurity concentration of the P-type semiconductor. 3. The semiconductor device according to claim 1, further comprising a sixth semiconductor having a conductivity type different from that of the first semiconductor and disposed in a region closer to the second surface than the region where the first semiconductor is disposed in the P-type semiconductor. The imaging device described. The imaging device according to claim 3, wherein the sixth semiconductor is in contact with an end portion of the fourth semiconductor on the second surface side in the P-type semiconductor. The imaging device according to claim 3, wherein the sixth semiconductor has an impurity concentration higher than that of the P-type semiconductor. 6. The semiconductor device according to claim 1, further comprising a seventh semiconductor having a conductivity type different from that of the second semiconductor and disposed in a region closer to the second surface than a region where the second semiconductor is disposed in the P-type semiconductor. The imaging device according to any one of the above. The imaging device according to claim 6, wherein the seventh semiconductor is in contact with an end portion of the fifth semiconductor on the second surface side in the P-type semiconductor. The imaging device according to claim 6, wherein the seventh semiconductor has an impurity concentration higher than an impurity concentration of the P-type semiconductor. A sixth semiconductor having a conductivity type different from that of the first semiconductor, disposed in a region closer to the second surface than the region where the first semiconductor is disposed in the P-type semiconductor;
  A seventh semiconductor having a conductivity type different from that of the second semiconductor disposed in a region closer to the second surface than the region where the second semiconductor is disposed in the P-type semiconductor;
An imaging device according to claim 1 or claim 2, comprising: The sixth semiconductor is in contact with an end of the fourth semiconductor on the second surface side in the P-type semiconductor;
  The imaging device according to claim 9, wherein the seventh semiconductor is in contact with an end portion of the fourth semiconductor on the second surface side in the P-type semiconductor.   The imaging device according to claim 9 or 10, wherein the sixth semiconductor and the seventh semiconductor are arranged apart from each other in the P-type semiconductor. The sixth semiconductor has an impurity concentration higher than that of the P-type semiconductor;
  The imaging device according to any one of claims 9 to 11, wherein the seventh semiconductor has an impurity concentration higher than an impurity concentration of the P-type semiconductor. The imaging device provided with the image pick-up element as described in any one of Claims 1-12.