JP2017200671A - Chemical reaction apparatus using microwave - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chemical reaction apparatus using microwaves which can uniformly heat a reactant.SOLUTION: A chemical reaction apparatus using microwaves includes a thin rectangular reactor 10 having a thin reaction space having a space between first facing wall surfaces of 0.05 mm-2.0 mm, and microwave supply means 12 having a plurality of waveguides arranged in parallel to each other which supplies microwaves in a wavelength range of 1 m to 1 mm to the thin rectangular reactor 10 so that electric force lines or magnetic force lines of the microwaves become a parallel or vertical direction to the first facing wall surface of the thin rectangular reactor according to a reactant distributed into the reaction space, where a phase of a stationary wave of the microwaves generated in each of the waveguides is adjusted and arranged so that the thin rectangular reactor passes through the inside of the plurality of waveguides, and the total electric field intensity or the total magnetic field intensity with respect to the width direction of the thin rectangular reactor becomes approximately equal.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a chemical reaction apparatus using a microwave.

  It has been well known that chemical reaction can be promoted by microwave irradiation. For example, Patent Document 1 below discloses a carbon nanotube processing method in which a carbon nanotube sample is processed at a position where the electric field of a standing wave having a first microwave frequency in a microwave cavity is maximized.

  Further, in Patent Document 2 below, the solution is circulated through an elongated tube-like flow tube penetrating through a single mode cavity that forms a standing wave, and the flow tube is positioned at a portion where the electromagnetic wave intensity becomes maximum. An apparatus that concentrates and irradiates microwaves on the solution is disclosed.

  In microwave irradiation using the above standing wave, there is generally no time change between a strong electromagnetic field strength and a weak magnetic field strength, so a reactor with a microwave target substance (reactant) placed in a strong location is used. It was necessary to irradiate microwaves only within a very narrow range. For this reason, it is difficult to uniformly heat a reactor widened to increase the cross-sectional area, a reactor having a plurality of tubular reactors adjacent to each other, or a microreactor having a plurality of channels adjacent to each other. there were.

Japanese Patent No. 4634998 Japanese Patent No. 5300014

  An object of the present invention is to provide a chemical reaction apparatus using a microwave that can uniformly heat a reaction product.

  In order to achieve the above object, the present invention includes the following embodiments.

  [1] A thin rectangular reactor having a thin reaction space in which a gap between first opposing wall surfaces is in a range of 0.05 mm to 2.0 mm, and a microwave having a wavelength range of 1 m to 1 mm in the thin rectangular reactor In accordance with the reactants flowing in the reaction space, so that the electric lines of force or lines of magnetic force of the microwave are parallel or perpendicular to the first opposing wall surface of the thin rectangular reactor. And a microwave supply means having a plurality of waveguides disposed in the plurality of waveguides, wherein the thin rectangular reactor penetrates the inside of the plurality of waveguides, and the total electric field strength in the width direction of the thin rectangular reactors Alternatively, the chemical reaction apparatus using microwaves is characterized in that the phases of the standing waves of the microwaves generated in the respective waveguides are adjusted and arranged so that the total magnetic field strength is substantially uniform.

  [2] The reaction space of the thin rectangular reactor is a rectangular parallelepiped having a width of 0.5 m or more, a depth of 0.3 m or more, and a gap between the first opposing wall surfaces of 0.05 mm to 2.0 mm. ] The chemical reaction apparatus using the microwave of description.

  [3] The chemical reaction apparatus using the microwave according to [1] or [2], wherein the reactant is circulated through the thin rectangular reactor at a speed of 1 mm / s or more.

  [4] The chemical reaction apparatus using the microwave according to any one of [1] to [3], further comprising a reactant supply means for circulating the reactant in the thin rectangular reactor.

  [5] The reactant supply means is supplied via a liquid pump including a plunger pump, a rotary pump, a diaphragm pump, a syringe pump, a piezo pump or a liquid amount adjusting device including a mass flow controller by applying pressure. The chemical reaction device using the microwave according to [4], which is any one of a pressure feeding device for feeding a liquid.

  [6] The microwave according to any one of [1] to [5], wherein the thin rectangular reactor has a heating zone divided into a plurality along the flow direction of the reactant. Chemical reactor.

  [7] The chemical reaction device using the microwave according to any one of [1] to [6], wherein the plurality of waveguides are arranged in parallel at intervals of 100 mm or more.

  [8] The chemical reaction apparatus using the microwave according to any one of [1] to [7], wherein the material of the thin rectangular reactor is any one of glass, quartz, alumina, and synthetic resin.

  According to the present invention, the reaction product can be heated uniformly.

It is a figure which shows the structural example of the reaction apparatus using the microwave concerning embodiment. It is a figure which shows the structural example of the microwave supply means concerning embodiment. It is explanatory drawing showing the example of the pulse control of the microwave supply means concerning embodiment. It is explanatory drawing which shows an example of the waveguide which comprises the microwave supply means concerning embodiment. It is explanatory drawing of the electromagnetic field distribution of the microwave which generate | occur | produces in the waveguide concerning embodiment. It is explanatory drawing of the 1st method for making heating of the thin rectangular reactor concerning embodiment uniform. It is explanatory drawing of the other example of the 1st method for making heating of the thin rectangular reactor concerning embodiment uniform. It is explanatory drawing of the 2nd method for making heating of the thin rectangular reactor concerning embodiment uniform. It is explanatory drawing of the other example of the 2nd method for making heating of the thin rectangular reactor concerning embodiment uniform.

  Hereinafter, modes for carrying out the present invention (hereinafter referred to as embodiments) will be described with reference to the drawings.

  FIGS. 1A and 1B show a configuration example of a reaction apparatus using a microwave according to the embodiment. In FIG. 1A, the reaction apparatus includes a thin rectangular reactor 10 and a microwave supply means 12. In the example of FIG. 1A, the microwave supply means 12 includes four waveguides 14a, 14b, 14c, and 14d, and the thin rectangular reactor 10 passes through the inside thereof. The waveguides 14a, 14b, 14c, and 14d are provided with devices that generate and control microwaves, but are omitted for convenience of explanation in the example of FIG. In the example of FIG. 1A, the microwave supply unit 12 includes four waveguides 14a, 14b, 14c, and 14d. However, the number n of the waveguides is not limited to four, and a plurality of waveguides 14a, 14b, 14c, and 14d are provided. If it is, it can be set as arbitrary numbers (n is a natural number of 2 or more). It is preferable that a plurality of waveguides are arranged in parallel with each other and have an interval of 100 mm or more in order to avoid interference of microwaves generated from each waveguide.

  The thin rectangular reactor 10 has a hollow inside, and a reactant (liquid) having fluidity is circulated in the direction of arrow A in FIG. FIG. 1B shows a cross section of the thin rectangular reactor 10 perpendicular to the direction of arrow A, that is, the flow direction of the reactants. In FIG. 1B, the cavity is a rectangular parallelepiped surrounded by a pair (upper and lower) of opposing wall surfaces w1 and w2 and side walls (left and right) w3 and w4 connecting the wall surfaces w1 and w2. Is formed in a rectangular shape. This cavity has a gap D between a pair of opposing wall surfaces w1, w2 in the range of 0.05 mm to 2.0 mm, and constitutes a thin reaction space. Moreover, it is suitable for the said wall surface w1, w2 to set it as the size of width 0.5m or more x depth 0.3m or more. Regarding the width, since the gap D of the thin rectangular reactor 10 is a small value, it is preferably 0.5 m or more in order to secure a flow rate per unit time for obtaining a sufficient production amount. The depth needs to be a certain value or more in order to arrange a plurality of microwave waveguides. The flow rate of the reactant in the thin rectangular reactor 10 is preferably 1 mm / s or more. Although not shown, the thin rectangular reactor 10 is provided with a reactant supply means for circulating the reactant. The reactant supply means is not particularly limited. For example, a pump for feeding liquid such as a plunger pump, a rotary pump, a diaphragm pump, a syringe pump, and a piezo pump can be used. It is also possible to use a pressure feeding device that feeds liquid via such a liquid amount adjusting device.

  Further, as the material of the thin rectangular reactor 10, it is preferable to select a material that absorbs less microwaves, such as glass, quartz, alumina, and synthetic resin. These 1 type may be used and multiple types may be used together.

  Further, as shown in FIG. 1B, the reaction space of the thin rectangular reactor 10 may have a heating zone divided into a plurality by partition walls Iw along the flow direction of the reactant (direction of arrow A). it can. Thereby, since the spreading | diffusion to the horizontal direction with respect to the distribution direction of a fluid can be suppressed, when using a some waveguide, it can heat more homogeneously.

  Four waveguides 14 a, 14 b, 14 c and 14 d included in the microwave supply means 12 supply microwaves to the thin rectangular reactor 10. In controlling the thin rectangular reactor 10 so as to be uniformly heated in the width direction, it is preferable that the wavelength of the standing wave generated in each of the plurality of waveguides is the same. is there.

  FIG. 2 shows a configuration example of the microwave supply means 12. In FIG. 2, the microwave supply means 12 includes a waveguide 14, a microwave source control unit 16, a microwave generation unit 18, a monitor unit 20, a tuner unit 22, and a movable short-circuit unit 24.

  The microwave source control unit 16 controls the microwave generation unit 18 so as to irradiate microwaves continuously or intermittently. Regarding generation of microwaves, pulse control may be performed as necessary when temperature control is difficult due to a high reaction heat amount or the like. In this case, as illustrated in FIG. 3, the microwave source control unit 16 performs an on-period operation (I) for supplying power of a predetermined power to the microwave generation unit 18 and supplies power to the microwave generation unit 18. The off-period operation (O) for shutting off is alternately repeated at predetermined timings.

  In an example of the present embodiment, the ratio (duty ratio) between the period length ti (seconds) of the on-period operation and the period length to (seconds) of the off-period operation is 1: 1, and the frequency (1 / (Ti + to)) is 50 kHz, the frequency and duty ratio, and the power P supplied to the microwave generator 18 are determined according to the heating target (reactant) and the like.

  When power is supplied from the microwave source control unit 16, the microwave generation unit 18 generates a microwave to be supplied to the waveguide 14. Here, the microwave is an electromagnetic wave having a wavelength range of 1 m to 1 mm (frequency is 300 MHz to 300 GHz). In the present embodiment, the microwave generator 18 introduces the generated microwave into the waveguide 14 from an iris portion formed at the longitudinal end of the waveguide 14.

  In addition, as the microwave generation part 18, the microwave generation part which changed the vibration direction of the electric field and magnetic field of a microwave as needed can also be used. In this case, a dedicated waveguide 14 is used for each vibration direction of the electric field and magnetic field, that is, for each TEn0 mode or TMn0 mode. Thereby, the electric field lines or magnetic field lines of the microwaves are parallel or perpendicular to the upper and lower opposing wall surfaces w1 and w2 of the thin rectangular reactor 10 depending on the reactants flowing in the reaction space of the thin rectangular reactor 10. Thus, the microwave can be supplied to the thin rectangular reactor 10.

  The monitor unit 20 measures the incident power of the microwave generated by the microwave generation unit 18 and the reflected power from the distal end portion 24a of the movable short-circuit unit 24, and outputs the measurement result. The tuner unit 22 generates an electromagnetic wave having a phase opposite to that of the reflected wave generated at the distal end portion 24a of the movable short-circuit unit 24 when the microwave enters the waveguide 14 constituting the heating unit, thereby canceling the reflected wave. . This prevents the reflected wave from returning to the microwave generator 18.

  The waveguide 14 constituting the microwave supply means 12 guides reactants flowing in the thin rectangular reactor 10 disposed in the waveguide 14 in order to make a resonant structure more efficiently as necessary. Heating is performed by microwaves introduced through an iris portion 26 (see FIG. 4) provided in the wave tube 14.

  The movable short-circuit portion 24 is disposed so as to be movable in the longitudinal direction in the waveguide 14 and terminates the microwave in the waveguide 14. That is, in the waveguide 14, the microwave introduced from the iris portion 26 is reflected and folded at the position of the distal end portion 24 a of the movable short-circuit portion 24. Then, if this movable short circuit part 24 is moved to a suitable position, a microwave can be made into a standing wave. Specifically, the tuner unit 22 is adjusted (generates an anti-phase electromagnetic wave) so that the reflected power measured and output by the monitor unit 20 is as low as possible, and a dummy fluid is allowed to flow through the reaction tube. In order to adjust the position so that the peak position of the microwave electric field or magnetic field becomes a desired position while monitoring the temperature rise, the movable short-circuit portion 24 and the iris portion 26 are moved, and the peak position of the standing wave is desired. What is necessary is just to fix the movable short circuit part 24 in the position judged to have been formed in this place.

  In the present embodiment, the wavelength of the microwave in the waveguide 14 is shortened by the material of the thin rectangular reactor 10 and the reactants flowing therethrough, so the condition of the standing wave changes accordingly. End up. Therefore, in the present embodiment, the movable short-circuit portion 24 (more specifically, the distal end portion 24a) is arranged at an optimal position for maintaining the standing wave while measuring the reflected power of the monitor unit 20.

  FIG. 4 shows an example of the waveguide 14 constituting the microwave supply means 12 (TE10 mode cavity resonator). In FIG. 4, the waveguide section 14 is provided with the tuner section 22 on the microwave receiving side. Further, an iris portion 26 is formed at the entrance of the microwave, and the microwave is introduced into the waveguide 14 through the opening of the iris portion 26. Moreover, in FIG. 4, the thin rectangular reactor 10 is shown with the broken line. The wave of the microwave Mw in FIG. 4 shows the electric field curve (the highest point of the wave (amplitude) (the highest point of the curve) is the maximum electric field point, and the lowest point (the lowest limit of the curve is the lowest electric field point). . As described above, the waveguide 14 may be operated in the TM10 mode.

  The movable short-circuit portion 24 is provided in the vicinity of the end portion of the waveguide 14 opposite to the iris portion 26, and the microwave Mw existing between the iris portion 26 and the distal end portion 24 a of the movable short-circuit portion 24. The reactant flowing through the thin rectangular reactor 10 is heated by the electric field. The range of influence of this electric field varies depending on the frequency (wavelength) of the microwave. For example, in the case of 2.45 GHz (about 148 mm), the range is about +/− 15 mm from the maximum point of the electric field. As will be described later, depending on the reactant, the reactant may be heated by a microwave magnetic field.

  As described above, the microwave generator 18 can supply microwaves in which the vibration directions of the electric field and the magnetic field are changed by the combination with the waveguide 14. Thereby, it is possible to control so that one of the electric lines of electric force or the lines of magnetic force of the microwave passes through the wall surfaces w1 and w2 of the thin rectangular reactor 10, and the other passes through a plane parallel to the wall surfaces w1 and w2. In the present embodiment, the combination of the microwave generator 18 and the waveguide 14 is selected so that the electric lines of force or magnetic lines of force used for heating pass through the plane parallel to the wall surfaces w1 and w2. As a result, an appropriate heating method using an electric field or a magnetic field can be selected depending on the reactant.

In order to generate a standing wave of the microwave Mw between the iris part 26 and the tip part 24a of the movable short-circuit part 24, the distance L between the iris part 26 and the tip part 24a is set as follows:
L = (2n−1) λg / 2
And Here, λg is the wavelength of the microwave Mw in the waveguide, and n is a natural number.

  5A, 5B, and 5C are explanatory diagrams of the electromagnetic field distribution of the microwave generated in the waveguide 14. FIG. FIG. 5A is a perspective view of the waveguide 14, and the waveguide 14 extends in a direction (z-axis direction) orthogonal to the xy plane of the drawing. When a microwave is supplied to the waveguide 14, a magnetic field is generated in the y-axis direction (direction perpendicular to the xz plane). Magnetic field lines representing the magnetic field at this time are indicated by solid arrows. The electric field is generated in the x-axis direction orthogonal to the magnetic field, and the lines of electric force are indicated by dashed arrows.

  FIG. 5B is a cross-sectional view of the waveguide 14 taken along a plane parallel to the yz plane. In FIG. 5 (b), the lines of microwave electric force are indicated by white circles (◯) and black circles (●). It is an electric field line in the direction of heading. The magnetic field lines are indicated by broken lines.

  In the example shown in FIG. 5 (b), the thin rectangular reactor 10 maintains a pair of opposing wall surfaces w1 and w2 substantially parallel to the direction of the electric field of microwaves (direction of electric lines of force). Arranged in the waveguide 14. Thereby, the dielectric heating by an electric field can be performed with respect to the reaction material which flows through the thin rectangular reactor 10. Here, “substantially parallel” means that the pair of opposing wall surfaces w1, w2 of the thin rectangular reactor 10 and the electric field direction of the microwave are parallel or maintain an angle within 5 degrees with respect to the electric field direction. Say. Note that the angle within 5 degrees refers to a state in which the normal line standing on the wall surfaces w1 and w2 and the direction of the electric field form an angle of 85 degrees or more. Further, the position in the waveguide 14 where the thin rectangular reactor 10 is arranged is a position including a point where the electric field of the microwave is maximum, that is, a position including a region where the electric lines of force are most dense. Note that the magnetic field is minimum at the maximum point of the electric field.

  FIG. 5C is a cross-sectional view of the waveguide 14 taken along a plane parallel to the xz plane. In FIG. 5C, the magnetic field lines of the microwave are indicated by white circles (◯) and black circles (●), the white circles are directed from the front side of the paper to the back side, and the black circles are directed from the back side of the paper to the front side. Magnetic field lines.

  The reactor using the microwave according to the present embodiment has the above-described configuration, and the microwave source control unit 16 continuously irradiates or pulses the microwave generated by the microwave generation unit 18 to guide the microwave. Microwaves are supplied to the thin rectangular reactor 10 disposed in the tube 14.

  5A, 5B, and 5C, a magnetic field is generated in the y-axis direction (direction orthogonal to the xz plane), and an electric field is generated in the x-axis direction (direction orthogonal to the yz plane). As described above, the magnetic field is generated in the x-axis direction (direction perpendicular to the yz plane) by appropriately selecting the combination of the microwave generator 18 and the waveguide 14 as described above. And an electric field is generated in the y-axis direction (direction perpendicular to the xz plane). If the pair of opposing wall surfaces (upper and lower) w1 and w2 of the thin rectangular reactor 10 are arranged in the waveguide 14 in a state of being substantially parallel to the direction of the magnetic field of the microwave (direction of the lines of magnetic force), the thin rectangular reactor 10 Inductive heating by a magnetic field can be performed on the reactant flowing in the reactor 10. In this case, the pair of opposing wall surfaces (upper and lower) w1 and w2 of the thin rectangular reactor 10 are substantially perpendicular to the direction of the electric field of microwaves (direction of electric lines of force). Therefore, if the reactant to be circulated in the thin rectangular reactor 10 is a conductor, or if it develops conductivity as the reaction proceeds, sparks may occur during microwave heating. In this embodiment, it is preferable to use an insulating reactant.

  As described above, the microwave standing wave formed inside the waveguide 14 described above has a maximum point and a minimum point in the electric field and the magnetic field. For this reason, in the configuration in which the reactant is heated by one waveguide 14, heating unevenness occurs when the reaction space of the thin rectangular reactor 10 is increased. For this reason, a plurality of waveguides 14 are arranged as shown in FIG.

  As a method for making the heating uniform, there is a method (first method) in which the phases of the odd-numbered waveguides and the even-numbered waveguides are shifted by 90 degrees. For more precise control, there is a method (second method) in which the phase is shifted by 180 / n degrees when n waveguides are used. Thereby, the maximum and minimum points of the electric and magnetic fields can be dispersed, and heating can be made uniform.

  FIG. 6 shows an example of the first method, and shows an example of controlling the phase of a standing wave when four waveguides 14 (14a, 14b, 14c and 14d) are provided. In the example of FIG. 6, corresponding to FIG. 1, four waveguides 14a, 14b, 14c, and 14d are shown in order from the top of the figure. For convenience of explanation, the four waveguides 14a, 14b, 14c, and 14d are shown separated, but are connected and arranged by the thin rectangular reactor 10 as shown in FIG. . Each of the waveguides 14a and 14c has the same phase, the waveguides 14b and 14d have the same phase, and the phases of the waveguides 14a and 14c and the phases of the waveguides 14b and 14d are shifted by 90 degrees. Waveguides are arranged so as to be shifted in the horizontal direction in the figure.

  FIG. 7 is another example of the first method. As in FIG. 6, the four waveguides 14 a, 14 b, 14 c, and 14 d are connected by the thin rectangular reactor 10. In the four waveguides 14a, 14b, 14c, and 14d, the positions of the iris portion 26 and the distal end portion 24a of the movable short-circuit portion 24 are controlled, and the phase of the standing wave generated in each waveguide is controlled. As a result, the phases of the waveguides 14a and 14c are the same, the phases of the waveguides 14b and 14d are the same, and the phases of the waveguides 14a and 14c and the phases of the waveguides 14b and 14d are shifted by 90 degrees. ing.

  FIG. 8 is an example of the second method. As in FIG. 6, the four waveguides 14 a, 14 b, 14 c, and 14 d are connected by the thin rectangular reactor 10. The four (n = 4) waveguides 14a, 14b, 14c and 14d are arranged so that the phase of the standing wave generated in each waveguide is shifted by (180/4) degrees, that is, 45 degrees. Yes. Specifically, with respect to the waveguide 14a, the waveguide 14b is disposed at a position shifted to the right by 90 degrees of the phase of the standing wave, and the waveguide 14c has a phase of 45 of the standing wave. In the waveguide 14d, it is arranged at a position shifted to the left in the figure by 45 degrees of the phase of the standing wave.

  FIG. 9 is another example of the second method. As in FIG. 8, the four waveguides 14 a, 14 b, 14 c, and 14 d are connected by the thin rectangular reactor 10. In four (n = 4) waveguides 14a, 14b, 14c and 14d, the positions of the iris part 26 and the tip 24a of the movable short circuit part 24 are controlled, and the phase of the standing wave generated in each waveguide is adjusted. I have control. Thereby, the phase of the standing wave generated in each waveguide is shifted by (180/4) degrees, that is, 45 degrees. Specifically, with respect to the phase of the waveguide 14a, the phase of the waveguide 14b is shifted to the right in the diagram by 90 degrees of the phase of the standing wave, and the phase of the waveguide 14c is the phase of the standing wave. The phase of the waveguide 14d is shifted to the left of the 45 degree diagram of the standing wave phase.

  With the above configuration, the total electric field strength or total magnetic field strength with respect to the width direction of the thin rectangular reactor 10 can be made substantially uniform, and the difference in the intensity of the microwaves irradiated to the thin rectangular reactor 10 can be reduced. it can. As a result, it is possible to more uniformly irradiate the reactant flowing through the thin rectangular reactor 10 with microwaves and perform uniform heating.

10 thin rectangular reactor, 12 microwave supply means, 14, 14a, 14b, 14c, 14d waveguide, 16 microwave source control unit, 18 microwave generation unit, 20 monitor unit, 22 tuner unit, 24 movable short circuit unit, 24a tip, 26 iris.

Claims (8)

A thin rectangular reactor having a thin reaction space in which the gap between the first opposing wall surfaces is in the range of 0.05 mm to 2.0 mm;
A microwave having a wavelength range of 1 m to 1 mm is applied to the thin rectangular reactor, and electric lines of force or magnetic lines of the microwave are opposed to the first of the thin rectangular reactor in accordance with the reactants circulated in the reaction space. A microwave supply means having a plurality of waveguides arranged in parallel to be supplied so as to be parallel or perpendicular to the wall surface;
With
Microwaves generated in each waveguide such that the thin rectangular reactors penetrate the inside of the plurality of waveguides and the total electric field strength or total magnetic field strength in the width direction of the thin rectangular reactors is substantially equal. A chemical reaction apparatus using microwaves, characterized in that the phase of standing waves is adjusted and arranged.   The reaction space of the thin rectangular reactor is a rectangular parallelepiped having a width of 0.5 m or more, a depth of 0.3 m or more, and a gap between the first opposing wall surfaces of 0.05 mm to 2.0 mm. Chemical reaction equipment using microwaves.   The chemical reaction apparatus using a microwave according to claim 1 or 2, wherein a reactant is circulated through the thin rectangular reactor at a speed of 1 mm / s or more.   Furthermore, the chemical reaction apparatus using the microwave as described in any one of Claims 1-3 provided with the reactant supply means for distribute | circulating a reactant to a thin rectangular reactor.   The reactant supply means sends a liquid via a plunger pump, a rotary pump, a diaphragm pump, a syringe pump, a piezo pump or a liquid amount adjusting device including a mass flow controller under pressure. The chemical reaction apparatus using a microwave according to claim 4, wherein the chemical reaction apparatus is any one of a pumping apparatus.   The chemical reaction apparatus using a microwave according to any one of claims 1 to 5, wherein the thin rectangular reactor has a heating zone divided into a plurality along the flow direction of the reactant.   The chemical reaction apparatus using a microwave according to any one of claims 1 to 6, wherein the plurality of waveguides are arranged in parallel with an interval of 100 mm or more. The chemical reaction apparatus using the microwave according to any one of claims 1 to 7, wherein a material of the thin rectangular reactor is any one of glass, quartz, alumina, and synthetic resin.

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