JP2017195337A - Tape and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a tape capable of suppressing the generation of chipping and the occurrence of chip cracking.SOLUTION: Provided is a tape which includes a separator and a film. The film includes an adhesive layer and a base material layer. The adhesive layer is located between the separator and the base material layer. In a wafer fixed part of the film, 90 degree peel force between the adhesive layer and the base material layer can be 0.015 N/20 mm to 0.4 N/20 mm. In a dicing ring fixed part of the film, 180 degree peel force between the adhesive layer and the base material layer can be equal to or more than 0.5 N/20 mm.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for manufacturing a tape and a semiconductor device.

  A tape for manufacturing a semiconductor device having a base material layer, a pressure-sensitive adhesive layer located on the base material layer, an adhesive layer located on the pressure-sensitive adhesive layer, and a separator in contact with the adhesive layer (hereinafter referred to as a tape) , "Three-layer tape").

  There is also a tape having a base material layer, an adhesive layer positioned on the base material layer, and a separator in contact with the adhesive layer (hereinafter sometimes referred to as “two-layer tape”). A two-layer tape can be manufactured at a lower cost than a three-layer tape.

JP 2004-281561 A JP 2014-185285 A Japanese Patent No. 4284922

  Compared with a three-layer tape, it is difficult for a two-layer tape to suppress the occurrence of chip chipping (hereinafter referred to as “chipping”) during dicing. It is also difficult for the two-layer tape to suppress the occurrence of chip cracking at the time of pick-up as compared to the three-layer tape. In the three-layer tape, the vibration of the chip during dicing can be suppressed by adjusting the thickness of the pressure-sensitive adhesive layer and the elastic modulus of the pressure-sensitive adhesive layer, but the two-layer tape connects the base material layer and the adhesive layer. Does not have a pressure-sensitive adhesive layer.

  An aspect of the present invention aims to provide a tape capable of suppressing the occurrence of chipping and the occurrence of chip cracking. An object of one embodiment of the present invention is to provide a method for manufacturing a semiconductor device.

  One embodiment of the present invention relates to a tape including a separator and a film. The film includes an adhesive layer and a base material layer. The adhesive layer is located between the separator and the base material layer. In the wafer fixing portion of the film, the 90 ° peeling force between the adhesive layer and the base material layer can be 0.015 N / 20 mm to 0.4 N / 20 mm. In the dicing ring fixing part of the film, the 180 degree peeling force between the adhesive layer and the base material layer can be 0.5 N / 20 mm or more.

  If the 90 ° peeling force of the wafer fixing part is 0.015 N / 20 mm or more and the 180 degree peeling force of the dicing ring fixing part is 0.5 N / 20 mm or more, vibration of the semiconductor chip during dicing can be suppressed. The occurrence of chipping can be suppressed. If the 90 ° peeling force of the wafer fixing portion is 0.4 N / 20 mm or less, there is a tendency that the semiconductor chip is not easily cracked during pickup.

  Both surfaces of the base material layer can be defined by a first main surface in contact with the adhesive layer and a second main surface facing the first main surface. The first major surface of the base material layer can include a pretreated region. When the first main surface of the base material layer does not include the preprocessed region, chip cracks are less likely to occur, but adhesive residue may easily occur in the dicing ring. This is because the polarity of the base material layer is generally low, and the adhesive force between the base material layer and the adhesive layer may be low. The pretreatment can be corona discharge treatment, plasma treatment, primer coating, peeling treatment, embossing, ultraviolet treatment, heat treatment, and the like. From the viewpoint of being applicable to roll-to-roll, corona discharge treatment, plasma treatment, and primer coating are preferred. In embossing, an uneven roll can be used. The surface irregularity of the embossed region can be, for example, 0.1 μm to 5 μm. Generally, the harder the adhesive layer, the more the point of contact with the surface irregularities of the base material layer, the lower the peel force. On the other hand, the softer the adhesive layer, the more the peeling force tends to increase because the adhesive layer follows surface irregularities.

  In some embodiments of the invention, the tape can be used for a variety of applications. For example, tape can be used for dicing die bonding. At this time, the adhesive layer can play a role of bonding the chip and the adherend. The film can also be used as a wafer back surface protective film, underfill film, and sealing film.

  An embodiment of the present invention also relates to a method for manufacturing a semiconductor device, including a step of forming a post-dicing chip including a semiconductor chip and a post-dicing adhesive layer. The step of forming the chip after dicing includes the step of forming a stacked body. The laminate includes a film, a semiconductor wafer fixed to the wafer fixing portion, and a dicing ring fixed to the dicing ring fixing portion. The step of forming the laminate includes a step of removing the separator from the tape.

It is a schematic plan view of a dicing die bonding tape. It is a schematic sectional drawing of a part of dicing die bonding tape. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of the manufacturing process of a semiconductor device. It is a schematic sectional drawing of a part of dicing die-bonding tape in the modification 8. It is a schematic sectional drawing of a part of dicing die bonding tape in the modification 9. 10 is a schematic cross-sectional view of a part of a dicing die bonding tape in Modification 10. FIG. It is a schematic sectional drawing of the dicing die bonding film in Example 1 etc. 6 is a schematic cross-sectional view of a dicing die bonding film in Example 5. FIG. It is a schematic sectional drawing of the dicing die bonding film in Example 6. FIG. It is a schematic sectional drawing of the dicing die bonding film in Example 7. It is a schematic sectional drawing of the dicing die bonding film in Example 8. It is a schematic sectional drawing of the dicing die bonding film in Example 9. FIG. It is a schematic sectional drawing of the dicing die-bonding film in the comparative example 4.

  The present invention will be described in detail below with reference to embodiments, but the present invention is not limited only to these embodiments.

Embodiment 1
As shown in FIG. 1, a dicing die bonding tape 1 includes a separator 11 and dicing die bonding films 12a, 12b, 12c,..., 12m (hereinafter collectively referred to as “dicing die bonding film 12”). The dicing die bonding tape 1 can have a roll shape. The separator 11 has a tape shape. The separator 11 is, for example, a peeled polyethylene terephthalate (PET) film. The dicing die bonding film 12 is located on the separator 11. The distance between the dicing die bonding film 12a and the dicing die bonding film 12b, the distance between the dicing die bonding film 12b and the dicing die bonding film 12c, ... The distance between the dicing die bonding film 12l and the dicing die bonding film 12m It is constant. The dicing die bonding film 12 has a disk shape.

  As shown in FIG. 2, the dicing die bonding film 12 includes a wafer fixing portion 12A and a dicing ring fixing portion 12B. Wafer fixing portion 12A can be formed in a disk shape, for example. The dicing ring fixing part 12B is located around the wafer fixing part 12A. Dicing ring fixing | fixed part 12B can make donut plate shape, for example.

  The dicing die bonding film 12 includes an adhesive layer 121. The adhesive layer 121 has a disk shape. The thickness of the adhesive layer 121 is, for example, 2 μm or more, preferably 10 μm or more. The thickness of the adhesive layer 121 is, for example, 200 μm or less, preferably 150 μm or less, and more preferably 100 μm or less. Both surfaces of the adhesive layer 121 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the adhesive layer 121 is in contact with the separator 11. The adhesive layer 121 includes an adhesive layer first portion 121A that is at least subordinate to the wafer fixing portion 12A. The adhesive layer 121 includes an adhesive layer second portion 121B that is at least subordinate to the dicing ring fixing portion 12B. The adhesive layer 121 includes an adhesive layer third portion 121C positioned between the adhesive layer first portion 121A and the adhesive layer second portion 121B. The adhesive layer third part 121C connects the adhesive layer first part 121A and the adhesive layer second part 121B. The adhesive layer third portion 121C can have a donut plate shape, for example.

  The dicing die bonding film 12 includes a base material layer 122. The base material layer 122 has a disk shape. The thickness of the base material layer 122 is, for example, 50 μm to 150 μm. Both surfaces of the base material layer 122 are defined by a first main surface in contact with the adhesive layer 121 and a second main surface facing the first main surface. The first main surface of the base material layer 122 includes a first region 122A in the wafer fixing portion 12A. The first area 122A is an area that has not been preprocessed. Pretreatment includes corona discharge treatment, plasma treatment, primer coating, peeling treatment, embossing, ultraviolet treatment, heat treatment, and the like. Examples of the release agent for the release treatment include a silicone-type release agent and a fluorine-type release agent. The first main surface of the base material layer 122 includes a second region 122B in the dicing ring fixing portion 12B. The second region 122B is a region subjected to corona discharge treatment.

  In the wafer fixing portion 12A, the 90 ° peeling force between the adhesive layer 121 and the base material layer 122 is 0.015 N / 20 mm to 0.4 N / 20 mm. In the dicing ring fixing portion 12B, the 180 degree peeling force between the adhesive layer 121 and the base material layer 122 is 0.5 N / 20 mm or more. Since the 90 ° peeling force of the wafer fixing part 12A is 0.015 N / 20 mm or more and the 180 degree peeling force of the dicing ring fixing part 12B is 0.5 N / 20 mm or more, the vibration of the semiconductor chip during dicing is suppressed. It is possible to suppress the occurrence of chipping. Since the 180 degree peeling force of the dicing ring fixing part 12B is 0.5 N / 20 mm or more, the remaining residue of the dicing ring can be suppressed. Since the 90 ° peeling force of the wafer fixing portion 12A is 0.4 N / 20 mm or less, there is a tendency that the semiconductor chip is not easily cracked during pick-up.

  The base material layer 122 is made of, for example, a polyether ether ketone film, a polyetherimide film, a polyarylate film, a polyethylene naphthalate film, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a chloride film. Vinyl copolymer film, polyethylene terephthalate film, polybutylene terephthalate film, polyurethane film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid Select from ester copolymer films, plastic films such as polystyrene films and polycarbonate films Bets are possible. Since the base material layer 122 desirably has a certain degree of stretchability, it is preferably a polyethylene film, a polypropylene film, an ethylene-vinyl acetate copolymer film, or an ionomer resin film.

  The adhesive layer 121 includes a resin component. Examples of the resin component include a thermoplastic resin and a thermosetting resin. An example of the thermoplastic resin is an acrylic resin.

  The acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. And a polymer (acrylic copolymer). Examples of the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2- Examples include ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, and dodecyl group.

  Further, the other monomer forming the polymer (acrylic copolymer) is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid Or a carboxyl group-containing monomer such as crotonic acid, an acid anhydride monomer such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, (meth ) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4 -Hydroxymethyl cycle Hexyl) -hydroxyl group-containing monomers such as methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate Alternatively, a sulfonic acid group-containing monomer such as (meth) acryloyloxynaphthalene sulfonic acid or the like, or a phosphoric acid group-containing monomer such as 2-hydroxyethylacryloyl phosphate may be used.

  Among the acrylic resins, those having a weight average molecular weight of 100,000 or more are preferable, those having 300,000 to 3,000,000 are more preferable, and those having 500,000 to 2,000,000 are more preferable. It is because it is excellent in adhesiveness and heat resistance in this numerical range. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

  The acrylic resin preferably contains a functional group. The functional group is, for example, a hydroxyl group, a carboxy group, a nitrile group or the like. A hydroxyl group and a carboxy group are preferred.

  The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. When it is 10% by weight or more, flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less.

  Examples of the thermosetting resin include an epoxy resin and a phenol resin.

  The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type Bifunctional epoxy resins such as ortho-cresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., and epoxy resins such as hydantoin type, trisglycidyl isocyanurate type, or glycidylamine type are used. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance.

The epoxy equivalent of the epoxy resin is preferably 100 g / eq. Or more, more preferably 120 g / eq. That's it. The epoxy equivalent of the epoxy resin is preferably 1000 g / eq. Or less, more preferably 500 g / eq. It is as follows.
In addition, the epoxy equivalent of an epoxy resin can be measured by the method prescribed | regulated to JISK7236-2009.

  The phenol resin acts as a curing agent for the epoxy resin. For example, a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type phenol resin. And polyoxystyrene such as polyparaoxystyrene. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The hydroxyl equivalent of the phenol resin is preferably 150 g / eq. Or more, more preferably 200 g / eq. That's it. The hydroxyl equivalent of the phenol resin is preferably 500 g / eq. Or less, more preferably 300 g / eq. It is as follows.

  The blending ratio of the epoxy resin and the phenol resin is preferably blended so that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of this range, the sufficient curing reaction does not proceed and the properties of the cured product are likely to deteriorate.

  The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, more preferably 80% by weight or less.

  The adhesive layer 121 can include an inorganic filler. Examples of inorganic fillers include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium , Solder, carbon and the like. Of these, silica, alumina, silver and the like are preferable, and silica is more preferable. The average particle diameter of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle diameter of the filler can be measured by the following method. Adhesive layer 121 is put in a crucible and ignited by igniting at 700 ° C. for 2 hours in an air atmosphere. The obtained ash is dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, and laser diffraction scattering particle size distribution. An average particle diameter is calculated | required using a measuring apparatus (The Beckman Coulter company make, "LS13320"; wet method).

  The content of the inorganic filler in the adhesive layer 121 is preferably 0% by weight or more, more preferably 1% by weight or more, still more preferably 3% by weight or more, and still more preferably 20% by weight or more. The content of the inorganic filler in the adhesive layer 121 is preferably 85% by weight or less, more preferably 20% by weight or less, and still more preferably 15% by weight or less.

  In addition to the above components, the adhesive layer 121 may appropriately contain a compounding agent generally used in film production, for example, a silane coupling agent, a curing accelerator, a crosslinking agent, and the like.

  The method of creating the dicing die bonding film 12 includes, for example, a step of performing a corona discharge treatment on the second region 122B of the base material layer 122 and a step of forming the adhesive layer 121 on the base material layer 122. Corona treatment is a surface treatment technique that modifies the surface of a substrate such as a plastic film, paper, or metal foil by corona discharge irradiation. When a dielectric is inserted between metal electrodes and a high frequency high voltage is applied, filamentary plasma called streamer corona is randomly formed between the electrodes in terms of time and space. High-energy electrons reach the surface layer of the polymer film that passes through the counter electrode side, and breaks the main chain and side chain of the polymer bond. The cut polymer surface layer is in a radical state, and oxygen radicals in the gas phase and the ozone layer are recombined with the main chain and side chains to introduce polar functional groups such as hydroxyl groups and carbonyl groups. Since hydrophilicity is imparted to the substrate surface, adhesion (wetability) to the hydrophobic polymer is improved, and the adhesive force is increased. When the introduced functional group and the adhesive layer 121 are chemically bonded, the adhesive force is further increased. The surface energy of the base material layer 122 after the corona discharge treatment is, for example, 30 dynes / cm or more, preferably 35 dynes / cm or more.

  There are two main methods for partially performing the corona treatment. The first is a method of protecting a part of the base material layer 122 with a mask (shielding object) so as not to be corona-treated. By disposing a mask between the base material layer 122 and the discharge electrode, a part of the base material layer 122 is shielded by the mask. The mask is made of, for example, a nonconductive material. A roll-shaped object having a plurality of masks, a long non-adhesive film having a plurality of masks, and a weakly adhesive tape having a plurality of masks can be used repeatedly. The second method is a method in which the base material layer 122 is passed between the discharge electrode and the dielectric roll having irregularities. In this method, only the convex portion can be modified. The dielectric roll includes, for example, a metal core and a dielectric layer wound around the metal core. The dielectric layer has irregularities. The distance between the recess and the electrode is preferably 2 mm or more. The dielectric layer can have, for example, insulation, conductivity, and corona discharge resistance. The dielectric layer is made of, for example, chlorine rubber, PET rubber, silicone rubber, or ceramic. The second method is simpler than the first. However, in the second method, the boundary between the corona-treated portion and the untreated portion tends to be more ambiguous than the first method.

  The dicing die bonding tape 1 can be used for manufacturing a semiconductor device.

As shown in FIG. 3, the separator 11 is removed from the dicing die bonding tape 1, and the dicing ring 91 and the semiconductor wafer 4 heated by the heating table 92 are fixed to the dicing die bonding film 12 with a roll 93. For example, the semiconductor wafer 4 is fixed at 40 ° C. or higher, preferably 45 ° C. or higher, more preferably 50 ° C. or higher, and further preferably 55 ° C. or higher. For example, the semiconductor wafer 4 is fixed at 100 ° C. or lower, preferably 90 ° C. or lower. The pressure is, for example, 1 × 10 ⁵ Pa to 1 × 10 ⁷ Pa. The roll speed is, for example, 10 mm / sec. Examples of the semiconductor wafer 4 include a silicon wafer, a silicon carbide wafer, and a compound semiconductor wafer. Examples of compound semiconductor wafers include gallium nitride wafers.

  As shown in FIG. 4, the laminate 2 includes a dicing die bonding film 12, a semiconductor wafer 4 fixed to the wafer fixing part 12A, and a dicing ring 91 fixed to the dicing ring fixing part 12B.

  As shown in FIG. 5, the semiconductor wafer 4 is cut with a dicing blade while water is sprayed on the semiconductor wafer 4. The dicing blade reaches the base material layer 122. The post-dicing chip 5 includes a semiconductor chip 41 and a post-dicing adhesive layer 121 located on the semiconductor chip 41. The semiconductor chip 41 has electrode pads.

  After dicing, the tip 5 is pushed up with a needle, and the post-dicing tip 5 is picked up.

  As shown in FIG. 6, the chip 5 after dicing is pressure-bonded to the adherend 6. For example, the pressure bonding is performed at 80 ° C. or higher, preferably 90 ° C. or higher. For example, the pressure bonding is performed at 150 ° C. or lower, preferably 130 ° C. or lower. The adherend 6 is, for example, a lead frame, an interposer, a TAB film, or a semiconductor chip. The adherend 6 has a terminal portion.

The post-dicing adhesive layer 121 is cured by heating the adherend 6 with the chip 5 after dicing in a pressurized atmosphere. The pressurized atmosphere is, for example, 0.5 kg / cm ² (4.9 × 10 ⁻² MPa) or more, preferably 1 kg / cm ² (9.8 × 10 ⁻² MPa) or more, more preferably 5 kg / cm ² ( 4.9 × 10 ⁻¹ MPa) or more. For example, heating is performed at 120 ° C. or higher, preferably 150 ° C. or higher, more preferably 170 ° C. or higher. An upper limit is 260 degreeC, 200 degreeC, 180 degreeC etc., for example.

  As shown in FIG. 7, the electrode pad of the semiconductor chip 41 and the terminal portion of the adherend 6 are electrically connected by the bonding wire 7, and the semiconductor chip 41 is sealed with the sealing resin 8.

  The semiconductor device obtained by the above method includes a semiconductor chip 41, an adherend 6, and a post-dicing adhesive layer 121. The post-dicing adhesive layer 121 connects the semiconductor chip 41 and the adherend 6. The semiconductor device further includes a sealing resin 8 that covers the semiconductor chip 41.

  As described above, the method for manufacturing a semiconductor device includes the step of forming the chip 5 after dicing. The method for manufacturing a semiconductor device further includes a step of pressure-bonding the chip 5 after dicing to the adherend 6.

  The step of forming the chip 5 after dicing includes the step of forming the stacked body 2. The step of forming the chip 5 after dicing further includes a step of dicing the semiconductor wafer 4 fixed to the wafer fixing portion 12A.

  The step of forming the laminate 2 includes a step of removing the separator 11 from the dicing die bonding tape 1. The step of forming the stacked body 2 further includes a step of fixing the semiconductor wafer 4 and the dicing ring 91 to the adhesive layer 121.

Modification 1
The second region 122B is a region where a primer is applied after the corona discharge treatment.

  It is desirable that the primer and the base material layer 122 are chemically bonded. As the primer, a material that can be chemically bonded to the base material layer 122 and can exhibit a strong adhesive force to the adhesive layer second portion 121B is preferable. The primer includes, for example, a crosslinking agent and a polymer. Examples of the crosslinking agent for the primer include an isocyanate crosslinking agent and an epoxy crosslinking agent. From the viewpoint of being able to react at a low temperature in a short time, an isocyanate-based crosslinking agent and an epoxy-based crosslinking agent are preferable. The polymer of the primer can have a functional group capable of reacting with the crosslinking agent. The functional group is, for example, a hydroxyl group. The thickness of the primer is, for example, 1 μm.

Modification 2
The first region 122A is a region that has been subjected to corona discharge treatment.

  The method for producing the dicing die bonding film 12 includes, for example, a step of performing corona discharge treatment on the base material layer 122 and a step of forming the adhesive layer 121 on the base material layer 122. In the step of performing the corona discharge treatment on the base material layer 122, the strength of the corona discharge treatment in the first region 122A can be made lower than the strength of the corona discharge treatment in the second region 122B. The strength of the corona discharge treatment in the first region 122A can be the same as the strength of the corona discharge treatment in the second region 122B. In this case, the adhesive layer first portion 121A preferably contains a release agent. Examples of the release agent include fluorine-based, silicone-based, and oil-based release agents. On the other hand, it is preferable that the adhesive layer second portion 121B does not contain such a release agent.

Modification 3
The first region 122A is a region where a primer is applied after the corona discharge treatment.

  It is preferable that both the polarity of the primer and the polarity of the adhesive layer first portion 121A are greatly different. The surface energy of the primer is, for example, 5 dynes / cm or more and less than 30 dynes / cm. The surface energy of the adhesive layer first portion 121A is, for example, more than 30 dynes / cm and 50 dynes / cm or less. If the modulus of elasticity of the primer is low, the peeling force between the adhesive layer first part 121A and the base material layer 122 may be too high. Therefore, the suitable modulus of elasticity of the primer at room temperature is, for example, 100 MPa or more. . Modification 1 applies mutatis mutandis to a suitable example of the primer.

  The strength of the corona discharge treatment in the first region 122A can be the same as the strength of the corona discharge treatment in the second region 122B. Both may be different.

Modification 4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment.

  The strength of the corona discharge treatment in the first region 122A can be the same as the strength of the corona discharge treatment in the second region 122B. Both may be different. Modification 1 applies mutatis mutandis to a suitable example of the primer.

Modification 5
The first area 122A is an embossed area.

Modification 6
The second area 122B is an embossed area.

Modification 7
The first main surface of the base material layer 122 is an embossed surface.

Modification 8
As shown in FIG. 8, the adhesive layer 121 includes an adhesive layer first part 121A and an adhesive layer second part 121B, and does not include an adhesive layer third part 121C. The adhesive layer first portion 121A has, for example, a disk shape. The adhesive layer second portion 121B has, for example, a donut plate shape. The adhesive layer second part 121B is not in contact with the adhesive layer first part 121A.

  The composition / physical properties of the adhesive layer second part 121B may be different from the composition / physical properties of the adhesive layer first part 121A. As a suitable example of the composition and physical properties of the adhesive layer first part 121A, Example 1 is applied mutatis mutandis. The adhesive layer second part 121B preferably has adhesiveness. Examples of the pressure-sensitive adhesive constituting the adhesive layer second part 121B include known acrylic, rubber-based, vinyl alkyl ether-based, silicone-based, polyester-based, polyamide-based, urethane-based, and styrene-diene block copolymer systems. These pressure-sensitive adhesives can be used alone or in combination of two or more.

  The adhesive layer second part 121B preferably includes a crosslinking agent capable of reacting with a functional group such as a hydroxyl group or a carboxylic acid group in the second region 122B subjected to the corona discharge treatment, and a resin component.

  The resin component preferably contains a thermoplastic resin having a functional group capable of reacting with the crosslinking agent. This is because the adhesive layer second part 121B and the base material layer 122 can be chemically bonded. Examples of the functional group of the thermoplastic resin include a hydroxyl group, a carboxylic acid group, an epoxy group, an amine group, a thiol group, and a phenol group. As the thermoplastic resin, an acrylic polymer is preferable from the viewpoint of adjusting the functional group. Examples of the acrylic polymer include (meth) methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, and the like. A homo- or copolymer of (meth) acrylic acid alkyl ester such as C1-C20 acrylic acid acrylic acid; (meth) acrylic acid alkyl ester and other copolymerizable monomers--for example, acrylic acid, methacrylic acid, itaconic acid, Carboxyl group or acid anhydride group-containing monomer such as fumaric acid and maleic anhydride; Hydroxyl group-containing monomer such as 2-hydroxyethyl (meth) acrylate; Amino group-containing monomer such as morpholyl acrylate (meth); Amide group-containing monomers such as acrylamide; (meth) acrylo And a copolymer with a cyano group-containing monomer such as nitrile; and a (meth) acrylic acid ester having an alicyclic hydrocarbon group such as isobornyl (meth) acrylate. The content of the resin component in the adhesive layer second part 121B is, for example, 94% by weight or more, preferably 95% by weight or more. The content of the resin component in the adhesive layer second part 121B is, for example, 99.99% by weight or less, preferably 99.97% by weight or less.

  Examples of the crosslinking agent include an isocyanate crosslinking agent, an epoxy crosslinking agent, an oxazoline crosslinking agent, and a peroxide. A crosslinking agent can be used alone or in combination of two or more. Isocyanate-based crosslinking agents and epoxy-based crosslinking agents are preferred. Examples of the isocyanate-based crosslinking agent include aromatic isocyanates such as tolylene diisocyanate and xylene diisocyanate, alicyclic isocyanates such as isophorone diisocyanate, and aliphatic isocyanates such as hexamethylene diisocyanate. More specifically, for example, lower aliphatic polyisocyanates such as butylene diisocyanate and hexamethylene diisocyanate, alicyclic isocyanates such as cyclopentylene diisocyanate, cyclohexylene diisocyanate and isophorone diisocyanate, 2,4-tolylene diisocyanate, Aromatic diisocyanates such as 4,4′-diphenylmethane diisocyanate, xylylene diisocyanate, polymethylene polyphenyl isocyanate, trimethylolpropane / tolylene diisocyanate trimer adduct (trade name Coronate L, manufactured by Nippon Polyurethane Industry Co., Ltd.), tri Methylolpropane / hexamethylene diisocyanate trimer adduct (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name Coronate HL), hexamethylene dii Isocyanurate of cyanate (Nippon Polyurethane Industry Co., Ltd., trade name Coronate HX) and other isocyanate adducts, xylylene diisocyanate trimethylolpropane adduct (Mitsui Chemicals, trade name D110N), hexamethylene diisocyanate trimethylolpropane Additives (Mitsui Chemicals, trade name D160N); polyether polyisocyanate, polyester polyisocyanate, adducts of these with various polyols, polyfunctionalized polyisocyanate, burette, allophanate, etc. An isocyanate etc. can be mentioned. Of these, it is preferable to use an aliphatic isocyanate because of its high reaction rate. An isocyanate type crosslinking agent may be used individually by 1 type, and may mix and use 2 or more types. The content of the isocyanate-based crosslinking agent in the adhesive layer second part 121B is, for example, 0.01 to 5 parts by weight, preferably 0.03 to 4 parts by weight with respect to 100 parts by weight of the resin component. It can be appropriately contained in consideration of cohesive force and prevention of peeling in a durability test.

  The adhesive layer 121 can be formed by screen printing, rotary screen printing, ink jet printing, gravure printing, roll to roll, or the like. Rotary screen printing is preferred from the viewpoint of productivity. These coating methods can use only 1 type and can also be used in combination. In these methods, the varnish may be exposed to the air during coating. It is preferable to use a low-volatile solvent that can suppress a change in the varnish concentration during coating. Such solvents are, for example, MIBK, butyl acetate, cyclohexanone, γ-butyrolactone, isophorone, carbitol acetate, DMSO, DMAc, NMP and the like.

Modification 8.1
The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 8.1 is a combination of Modification 8 and Modification 1. As a suitable example of the modification 8.1, the modification 1 is applied mutatis mutandis.

Modification 8.2
The first region 122A is a region that has been subjected to corona discharge treatment. Modification 8.2 is a combination of Modification 8 and Modification 2. As a suitable example of the modification 8.2, the modification 2 is applied mutatis mutandis.

Modification 8.3
The first region 122A is a region where a primer is applied after the corona discharge treatment. Modification 8.3 is a combination of Modification 8 and Modification 3. As a suitable example of the modification 8.3, the modification 3 is applied mutatis mutandis.

Modification 8.4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment. Modification 8.4 is a combination of Modification 8 and Modification 4. As a suitable example of the modification 8.4, the modification 4 is applied mutatis mutandis.

Modification 8.5
The first area 122A is an embossed area. Modification 8.5 is a combination of Modification 8 and Modification 5.

Modification 8.6
The second area 122B is an embossed area. Modification 8.6 is a combination of Modification 8 and Modification 6.

Modification 8.7
The first main surface of the base material layer 122 is an embossed surface. Modification 8.7 is a combination of Modification 8 and Modification 7.

Modification 9
As shown in FIG. 9, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a disk shape. Both surfaces of the first layer 1211 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211. The second main surface of the second layer 1212 is in contact with the base material layer 122.

Modification 9.1
The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 9.1 is a combination of Modification 9 and Modification 1. A preferred example of the modification 9.1 applies the modification 1 mutatis mutandis.

Modification 9.2
The first region 122A is a region that has been subjected to corona discharge treatment. Modification 9.2 is a combination of Modification 9 and Modification 2. A suitable example of the modification example 9.2 applies the modification example 2 mutatis mutandis.

Modification 9.3
The first region 122A is a region where a primer is applied after the corona discharge treatment. Modification 9.3 is a combination of Modification 9 and Modification 3. As a suitable example of the modification 9.3, the modification 3 is applied mutatis mutandis.

Modification 9.4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment. Modification 9.4 is a combination of Modification 9 and Modification 4. As a suitable example of the modification 9.4, the modification 4 is applied mutatis mutandis.

Modification 9.5
The first area 122A is an embossed area. The modification 9.5 is a combination of the modification 9 and the modification 5.

Modification 9.6
The second area 122B is an embossed area. Modification 9.6 is a combination of Modification 9 and Modification 6.

Modification 9.7
The first main surface of the base material layer 122 is an embossed surface. Modification 9.7 is a combination of Modification 9 and Modification 7.

Modification 10
As shown in FIG. 10, the adhesive layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a donut plate shape. The first layer 1211 is located on the dicing ring fixing part 12B. Both surfaces of the first layer 1211 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the separator 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The first layer 1211 can have adhesiveness. The second layer 1212 has a disk shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface facing the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211 at the dicing ring fixing portion 12B. The second main surface of the second layer 1212 is in contact with the base material layer 122.

Modification 10.1
The second region 122B is a region where a primer is applied after the corona discharge treatment. Modification 10.1 is a combination of Modification 10 and Modification 1. As a suitable example of the modification 10.1, the modification 1 is applied mutatis mutandis.

Modification 10.2
The first region 122A is a region that has been subjected to corona discharge treatment. Modification 10.2 is a combination of Modification 10 and Modification 2. A suitable example of Modification Example 10.2 applies mutatis mutandis.

Modification 10.3
The first region 122A is a region where a primer is applied after the corona discharge treatment. Modification 10.3 is a combination of Modification 10 and Modification 3. A suitable example of Modification Example 10.3 applies Modification Example 3 mutatis mutandis.

Modification 10.4
The first main surface of the base material layer 122 is a surface coated with a primer after the corona discharge treatment. Modification 10.4 is a combination of Modification 10 and Modification 4. As a suitable example of Modification Example 10.4, Modification Example 4 applies mutatis mutandis.

Modification 10.5
The first area 122A is an embossed area. Modification 10.5 is a combination of Modification 10 and Modification 5.

Modification 10.6
The second area 122B is an embossed area. Modification 10.6 is a combination of Modification 10 and Modification 6.

Modification 10.7
The first main surface of the base material layer 122 is an embossed surface. Modification 10.7 is a combination of Modification 10 and Modification 7.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to a following example, unless the summary is exceeded.

Base material / corona treatment machine Base film A Film made by Kurashiki Boseki Co., Ltd. (film thickness 130 μm, no corona treatment, EVA film without peeling treatment)
Base film B MRA38 manufactured by Mitsubishi Plastics Chemical Co., Ltd. (PET film with a film thickness of 38 μm which has been subjected to silicone release treatment)
Corona treatment machine PILLAR TECHNOLOGIES 500 series

Corona treatment amount The corona treatment amount is expressed by the following equation.
Discharge treatment amount (W · min / m ² ) = discharge electrode voltage (W) ÷ electrode width (m) ÷ speed (m / min)

Preparation of Adhesive Layer A 54 parts by weight of acrylic rubber (SG-708-6 manufactured by Nagase ChemteX), 3 parts by weight of epoxy resin (HP-4700 manufactured by DIC), and 3 parts by weight of phenol resin (Maywa Kasei) MEH-7851H manufactured by KK and 40 parts by weight of silica filler (SO-E2 manufactured by Admatechs) were dissolved in a cyclohexanone solvent to obtain a 15 wt% adhesive layer A solution. Adhesive layer A liquid was applied to the separator to obtain adhesive layer A.

Preparation of Adhesive Layer B 96 parts by weight of thermoplastic resin (Paracron SN-50 manufactured by Negami Kogyo Co., Ltd., monomer BA, Tg-43 ° C., hydroxyl value 8.5 KOH mg / g, weight average molecular weight 80,000) and isocyanate type 4 parts by weight of a crosslinking agent (Coronate L, manufactured by Tosoh Corporation) was dissolved in cyclohexanone to obtain a 15 wt% adhesive layer B liquid. Adhesive layer B liquid was applied to the separator to obtain adhesive layer B.

Preparation of Undercoat Liquid An acrylic polymer (hydroxyl value 55.6 mgKOH / g (calculated value), molecular weight 849,000 (GPC measured value), Tg-65.1 ° C.) was obtained by copolymerization of 2-EHA and HEA. 82 parts by weight of an acrylic polymer and 18 parts by weight of an isocyanate crosslinking agent (Coronate L manufactured by Tosoh Corporation) were dissolved in MEK to obtain a 15 wt% undercoat solution.

Production of Dicing Die Bonding Films in Examples 1 to 4 and Comparative Examples 1 to 2 A film for mask (E-MASK RP207 manufactured by Nitto Denko Corporation) was applied to the base film A, and the corona irradiation amount shown in Table 1 was used. Processed. The adhesive layer A was laminated on the base film A after the corona treatment at 60 ° C., 10 mm / sec, 0.15 MPa. Thereby, the dicing die bonding films of Examples 1 to 4 and Comparative Examples 1 to 2 (hereinafter sometimes referred to as “dicing die bonding film (71)”) were obtained. As shown in FIG. 11, each dicing die bonding film (71) has a base film A (712). The base film A (712) has a discoid part (712a) having a diameter of 320 mm that is not corona-treated. The base film A (712) has a modified portion (712b) modified by corona treatment around the disc-shaped portion (712a). Each dicing die bonding film (71) further has an adhesive layer A (711) having a thickness of 20 μm located on the base film A (712).

Production of Dicing Die Bonding Film in Example 5 A masking film (E-MASK RP207 manufactured by Nitto Denko Corporation) was attached to the base film A, and corona treatment was performed with the corona dose shown in Table 1. A disc-shaped adhesive layer A was laminated on a portion of the base film A that was not corona-treated at 60 ° C., 10 mm / sec, and 0.15 MPa. A donut plate-like adhesive layer B was laminated on a portion of the base film A that had been subjected to corona treatment at 60 ° C., 10 mm / sec, and 0.15 MPa. Aging was performed in an oven at 50 ° C. for 24 hours. This obtained the dicing die-bonding film of Example 5 (henceforth "the dicing die-bonding film (72)"). As shown in FIG. 12, the dicing die bonding film (72) has a base film A (722). The base film A (722) has a discoid part (722a) having a diameter of 320 mm that is not corona-treated. The base film A (722) has a modified portion (722b) modified by corona treatment around the disc-shaped portion (722a). The dicing die bonding film 72 further has a disk-shaped adhesive layer A (7211) having a thickness of 20 μm and a diameter of 330 mm located on the disk-shaped portion (722a). The dicing die bonding film 72 further has a donut plate-like adhesive layer B (7212) having a thickness of 20 μm located on the modified portion (722b).

Production of Dicing Die Bonding Film in Example 6 The substrate film A was subjected to a corona treatment with the corona irradiation amount shown in Table 1, and an undercoat solution was applied to the substrate film A after the corona treatment, followed by drying at 50 ° C. for 10 minutes. Aged in an oven at 50 ° C. for 24 hours. The disc-shaped adhesive layer A was laminated on the base film A after aging at 60 ° C., 10 mm / sec, 0.15 MPa. A doughnut-shaped adhesive layer B was laminated on the base film A at 60 ° C., 10 mm / sec, 0.15 MPa. Aging was performed in an oven at 50 ° C. for 24 hours. This obtained the dicing die-bonding film of Example 6 (henceforth "the dicing die-bonding film (73)"). As shown in FIG. 13, the dicing die bonding film (73) has a base film A (732). The dicing die bonding film (73) further has a disk-shaped adhesive layer A (7311) having a thickness of 20 μm and a diameter of 330 mm, which is located on the base film A (732). The dicing die bonding film (73) further has a 20 μm thick toroidal plate-like adhesive layer B (7312) located on the base film A (732).

Production of Dicing Die Bonding Film in Example 7 The substrate film A was subjected to corona treatment with the corona irradiation amount shown in Table 1. The adhesive layer A was laminated on the base film A after corona treatment at 60 ° C., 10 mm / sec, 0.15 MPa. This obtained the dicing die-bonding film of Example 7 (henceforth a "dicing die-bonding film (74)"). As shown in FIG. 14, the dicing die bonding film (74) has a base film A (742). The base film A (742) has a disk-shaped part (742a) having a diameter of 320 mm that is modified at 55 W · min / m ² . The base film A (742) has a modified portion (742b) modified at 165 W · min / m ² around the disc-shaped portion (742a). The dicing die bonding film (74) further has an adhesive layer A (741) having a thickness of 20 μm located on the base film A (742).

Preparation of Dicing Die Bonding Film in Example 8 The substrate film A was subjected to corona treatment with the corona irradiation amount shown in Table 1. A disc-shaped adhesive layer A was laminated on the portion of the base film A that was modified with 55 W · min / m ² at 60 ° C., 10 mm / sec, 0.15 MPa. A donut plate-like adhesive layer B was laminated on the portion of the base film A that was modified at 165 W · min / m ² at 60 ° C., 10 mm / sec, 0.15 MPa. Aging was performed in an oven at 50 ° C. for 24 hours. Thereby, the dicing die bonding film of Example 8 (hereinafter, also referred to as “dicing die bonding film”) was obtained. As shown in FIG. 15, the dicing die bonding film (75) has a base film A (752). The base film A (752) has a disk-shaped part (752a) having a diameter of 320 mm and modified at 55 W · min / m ² . The base film A (752) has a modified portion (752b) modified at 165 W · min / m ² around the disc-shaped portion (752a). The dicing die bonding film (75) further includes a disk-shaped adhesive layer A (7511) having a thickness of 20 μm and a diameter of 330 mm located on the disk-shaped portion (752a). The dicing die bonding film further has a donut plate-like adhesive layer B (7512) having a thickness of 20 μm located on the modified portion (752b).

Production of Dicing Die Bonding Film in Example 9 The substrate film A was subjected to a corona treatment with the corona irradiation amount shown in Table 1, and an undercoat liquid was applied to a part of the substrate film A after the corona treatment. It was dried at 50 ° C. for 10 minutes and aged (aged) in an oven in a vacuum state at 50 ° C. for 24 hours. The adhesive layer A was laminated on the base film A after aging at 60 ° C., 10 mm / sec, 0.15 MPa. This obtained the dicing die-bonding film of Example 9 (henceforth "the dicing die-bonding film (76)"). As shown in FIG. 16, the dicing die bonding film (76) has a base film A (762). The base film A (762) has a disk-shaped portion (762a) having a diameter of 320 mm that has not been primed. The base film A (762) has a modified portion (762b) subjected to undercoating treatment around the disc-shaped portion (762a). The dicing die bonding film (76) further has an adhesive layer A (761) having a thickness of 20 μm located on the base film A (762).

Production of Dicing Die Bonding Film in Comparative Example 3 Adhesive layer A was laminated on base film A. This obtained the dicing die-bonding film of the comparative example 3. The dicing die bonding film has a base film A. The dicing die bonding film further has an adhesive layer A having a thickness of 20 μm located on the base film A.

Production of Dicing Die Bonding Film in Comparative Example 4 In a part of the base film B, the silicone release agent was wiped off with a wiper (Bencot (registered trademark)) impregnated with toluene. The adhesive layer A was laminated on the base film B.
This obtained the dicing die-bonding film of the comparative example 4 (henceforth a "dicing die-bonding film (78)"). As shown in FIG. 17, the dicing die bonding film (78) has a base film B (782). The base film B (782) has a disk-shaped portion (782a) having a diameter of 320 mm that does not have a silicone release agent. The base film B (782) has a modified portion (782b) having a silicone release agent around the disc-shaped portion (782a). The dicing die bonding film (78) further has an adhesive layer A (781) having a thickness of 20 μm located on the base film B (782).

Production of Dicing Die Bonding Film in Comparative Example 5 A dicing die bonding film of Comparative Example 5 was obtained in the same manner as in Example 8 except that the corona treatment of the substrate film A was performed with the corona irradiation amount shown in Table 1. It was.

Preparation of Dicing Die Bonding Film in Comparative Example 6 A dicing die bonding film of Comparative Example 6 was obtained in the same manner as in Example 5 except that the substrate film A was subjected to corona treatment with the corona dose shown in Table 1. It was.

Production of Dicing Die Bonding Film in Comparative Example 7 A dicing die bonding film of Comparative Example 7 was obtained in the same manner as in Example 8 except that the corona treatment of the substrate film A was carried out with the corona dose shown in Table 1. It was.

Definitions Base film A and base film B are collectively referred to as “base film”. The adhesive layer A and the adhesive layer B are collectively referred to as “adhesive layer”.

  Wafer fixing portions 71a, 72a, 73a, 74a, 75a, 76a, 77a, and 78a indicate portions for fixing the wafer. The dicing ring fixing portions 71b, 72b, 73b, 74b, 75b, 76b, 77b, and 78b indicate portions for fixing the dicing ring.

Peeling force between the adhesive layer and the base film at the wafer fixing part A backing tape (BT-315 manufactured by Nitto Denko Corporation) is attached to the adhesive layer of the dicing die bonding film at room temperature, and 70 mm × 10 mm from the wafer fixing part. A dicing die bonding film test piece was cut out. Using an autograph AGS-J (manufactured by Shimadzu Corporation), a T peel test was performed at a peeling angle of 90 degrees and a peeling speed of 300 mm / min. The average value of the peeling force is shown in Table 1.

Peeling force between the adhesive layer and the base film at the dicing ring fixing part A backing tape (BT-315 manufactured by Nitto Denko Corporation) is adhered to the adhesive layer of the dicing die bonding film at room temperature, and 70 mm × from the dicing ring fixing part. A 10 mm dicing die bonding film test piece was cut out. Using an autograph AGS-J (manufactured by Shimadzu Corporation), a peeling test was performed at a peeling angle of 180 degrees and a peeling speed of 300 mm / min. The average value of the peeling force is shown in Table 1.

Peeling force between SUS board and adhesive layer To remove dirt on the surface of SUS board (SUS304, 400 μm), wipe with a wiper soaked with toluene (Bencot (registered trademark) TR-7F manufactured by Asahi Kasei Co., Ltd.). Wipe with a soaked wiper and dry wipe with a wiper bencott. A wafer fixing part test piece having a width of 10 mm and a length of 60 mm was cut out from the wafer fixing part of the dicing die bonding film. The wafer fixing part test piece was adhered to the SUS plate with a 2 kg roller so that air bubbles would not enter. A peeling test was performed at a peeling angle of 180 degrees and a peeling speed of 300 mm / min. When peeling occurs between the adhesive layer and the base film in the peel test, the base film is removed and a backing tape (BT-315 made by Nitto Denko) is attached to the adhesive layer at room temperature. A peel test was performed. The average value of the peeling force is shown in Table 1.

Dicing A dicing die bonding film was attached to a wafer having a thickness of 100 μm and a dicing ring at 60 ° C. with a mounter apparatus (MA-3000II manufactured by Nitto Seiki Co., Ltd.). Dicing was performed to a chip size of 10 mm × 10 mm with a dicing apparatus (DFD6361 manufactured by Disco Corporation) at a rotation speed of 40000 rpm and a feed rate of 30 mm / second.

Pickup After dicing, a chip with an adhesive layer was picked up using a die bonding apparatus (SPA-300 manufactured by Shinkawa). When no chip cracking occurred in all the chips, it was judged as “good”. When chip cracking occurred in at least one chip, it was judged as x. The results are shown in Table 1.

Chipping (chip missing)
For each example, the side surface of 20 chips was observed, the chip chip depth on the back of the chip (hereinafter referred to as “chipping distance”) was measured, and the average value was obtained. When the average value was less than 5 μm, it was judged as “good”. When the average value was 5 μm or more, it was determined as x. The results are shown in Table 1.

Adhesive residue A wafer mounting device (MA-3000II manufactured by Nitto Seiki Co., Ltd.) was attached to a SUS dicing ring at 10 mm / sec and 60 ° C. and left at room temperature for 1 week, and from the SUS dicing ring to the dicing die bonding film. Peeled off. It was confirmed whether the adhesive remained in the SUS dicing ring. The adhesive residue was confirmed with 10 dicing die bonding films for each example. When no adhesive remained in all the dicing die bonding films, it was judged as “good”. When the adhesive remained in at least one dicing die bonding film, it was determined as x. The results are shown in Table 1.

Claims (4)

A separator;
A film comprising an adhesive layer and a substrate layer,
The adhesive layer is located between the separator and the substrate layer;
In the wafer fixing part of the film, a 90-degree peeling force between the adhesive layer and the base material layer is 0.015 N / 20 mm to 0.4 N / 20 mm,
In the dicing ring fixing portion of the film, a 180 degree peeling force between the adhesive layer and the base material layer is 0.5 N / 20 mm or more.
tape.   The tape according to claim 1, wherein the adhesive layer is in contact with the separator.   The tape according to claim 1, wherein the adhesive layer contains a thermosetting resin. Forming a post-dicing chip including a semiconductor chip and a post-dicing adhesive layer;
The step of forming the chip after dicing includes the step of forming a laminate including the film, a semiconductor wafer fixed to the wafer fixing portion, and a dicing ring fixed to the dicing ring fixing portion.
The step of forming the laminate includes a step of removing the separator from the tape according to any one of claims 1 to 3.
A method for manufacturing a semiconductor device.

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