JP2017181955A - Optical shutter substrate, and manufacturing method of optical shutter substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optical shutter substrate capable of suppressing occurrence of contact failure between a conductive film as a part of an optical shutter mechanism and a metal film of an active matrix layer.MEANS: The optical shutter substrate includes: an active matrix layer which includes a semiconductor film, a translucent metal film and an optical reflective metal; and an optical shutter mechanism which includes a conductive film and is disposed in an upper layer of the active matrix layer. There are formed a first contact area (CR1) in which the translucent metal film (18) and the conductive film (26) are in contact with each other; and a second contact area (CR2) in which the translucent metal film (18) and the optical reflective metal (12) are in contact with each other.SELECTED DRAWING: Figure 5

Description

  The present invention relates to an optical shutter substrate using MEMS.

  Patent Document 1 discloses a conventional technique using MEMS (Micro Electro Mechanical Systems) for pixels of a display device.

  In this conventional technique, for each pixel, an optical shutter mechanism including a shutter body and a driving beam and a transistor (TFT) connected to the driving beam are provided to irradiate the optical shutter mechanism with light, and the mechanical operation of the shutter body The light is blocked or passed by.

  Specifically, a light transmission path through which light that has passed through the optical shutter mechanism passes is provided, and a driving beam is disposed so as to face the shutter beam (spring) connected to the shutter body, and the shutter beam and the driving beam are arranged between them. The amount of light emitted from the light transmission path is controlled for each pixel by deforming the shutter beam by electrostatic force and sliding the shutter body.

JP 2012-252205 A (published December 10, 2012)

  An optical shutter substrate using MEMS includes an active matrix layer including a plurality of thin film transistors, and a mechanical layer disposed on the light source side of the active matrix layer and including an optical shutter mechanism. In the formation process of the mechanical layer, the conductive film that is a part of the optical shutter mechanism is brought into contact with the metal film of the active matrix layer in the contact hole formed in the sacrificial film. The inventor has found that contact failure occurs between the conductive film which is a part of the optical shutter mechanism and the metal film of the active matrix layer.

  One of the objects of the present invention is to propose an optical shutter substrate in which poor contact between the conductive film which is a part of the optical shutter mechanism and the metal film of the active matrix layer is unlikely to occur.

  An optical shutter substrate according to one embodiment of the present invention includes an active matrix layer including a semiconductor film, a light-transmitting metal film, and a light-reflecting metal film, and an optical shutter mechanism that is disposed on the active matrix layer and includes a conductive film A first contact region in contact with the translucent metal film and the conductive film, and a second contact region in contact with the translucent metal film and the light reflective metal film. Is provided. In addition, regarding the optical shutter substrate, the surface on which light from the light source is incident is the upper surface, and the surface on the opposite side is the lower surface.

  According to the optical shutter substrate, contact failure between the conductive film that is a part of the optical shutter mechanism and the metal film of the active matrix layer is less likely to occur.

1 is a schematic diagram illustrating a configuration of a display device according to a first embodiment. 1 is a cross-sectional view illustrating a configuration of an optical shutter substrate according to Embodiment 1. FIG. 3 is a flowchart illustrating a method for manufacturing the optical shutter mechanism according to the first embodiment. FIG. 3 is a plan view showing an arrangement of a sacrificial film, a translucent metal film, a light-shielding metal film, and contact holes in Embodiment 1. FIG. 6 is a cross-sectional view illustrating a main part of the method for manufacturing the optical shutter mechanism according to the first embodiment. FIG. 6 is a plan view showing the arrangement of a sacrificial film, a light-transmitting metal film, a light-shielding metal film, and contact holes in Embodiment 2. FIG. 10 is a cross-sectional view illustrating a main part of a method for manufacturing an optical shutter mechanism according to a second embodiment. FIG. 10 is a plan view showing the arrangement of sacrificial films, translucent metal films, light-shielding metal films, and contact holes in Embodiment 3. FIG. 6 is a schematic diagram illustrating a configuration of a 3D printer head according to a fourth embodiment. It is explanatory drawing which shows the manufacturing method of the optical shutter mechanism concerning a reference form.

Embodiment 1
FIG. 1 is a schematic diagram illustrating the configuration of the display device according to the first embodiment, and FIG. 2 is a cross-sectional view illustrating the configuration of the optical shutter device according to the first embodiment. As illustrated in FIG. 1, the display device DP according to the first embodiment includes an optical shutter substrate 1 and an optical shutter device 1 including the counter substrate 30 facing the optical shutter substrate 1, and the optical shutter substrate 1 via the counter substrate 30. And a backlight BL for irradiating LED (light emitting diode) light or laser light.

  As shown in FIGS. 1 and 2, an optical shutter substrate 1 includes an active matrix layer 19 including a thin film transistor (TFT) and an optical shutter that is disposed on the backlight side of the active matrix layer and is a micro electro mechanical system (MEMS). A mechanical layer 20 including a mechanism 21 is provided, and an optical shutter mechanism 21 and a light transmission path through which light that has passed through the optical shutter mechanism 21 passes are provided for each pixel.

  As shown in FIGS. 1 and 2, the optical shutter mechanism 21 includes a shutter body 28, a shutter beam 23x connected to one side end of the shutter body 28, a shutter beam 23y connected to the other side end, and a shutter beam 23x. A drive beam 22x facing the shutter beam 23y, a drive beam 22y facing the shutter beam 23y, a shutter anchor 23b connected to the shutter beam 23x, a shutter anchor 23d connected to the shutter beam 23y, a drive anchor 22b connected to the drive beam 22x, And a drive anchor 22d connected to the drive beam 23y.

  The shutter beam 23x is connected to the shutter line of the active matrix layer via the shutter anchor 23b, the shutter beam 23y is connected to the shutter line of the active matrix layer via the shutter anchor 23d, and the drive beam 22x is connected to the shutter anchor 22b. The drive beam 22y is connected to another TFT of the active matrix layer via a drive anchor 22d, and the spring-like shutter beams 23x and 23y are controlled by controlling the potential of the drive beams 22x and 22y. The amount of light emitted to the viewer 50 side through the optical shutter mechanism 21 and the light transmission path is controlled by deforming and sliding the shutter body 28 in a direction parallel to the substrate surface.

  Here, for example, using a field sequential method, red light, green light, and blue light are sequentially irradiated from the backlight, and the light amount of red light, the light amount of green light, and the light amount of blue light are adjusted, respectively. Gradation can be expressed.

  Hereinafter, the optical shutter substrate 1 will be described on the assumption that the surface on which the backlight is incident is the upper surface (upper surface) and the surface on the opposite side from which light is emitted is the lower surface (lower surface). .

  As shown in FIG. 2, the active matrix layer 19 of the optical shutter substrate 1 includes a glass substrate 2, a lower metal film 5x · 5y formed on the upper layer of the glass substrate 2, and an upper layer of the lower metal film 5x · 5y. The formed gate insulating film 6, the semiconductor films 7x and 7y (for example, oxide semiconductor film) formed on the gate insulating film 6, and the etching stopper film 8 formed on the semiconductor films 7x and 7y. The intermediate metal films 9a to 9d formed on the etching stopper film 8, the passivation film 10 formed on the intermediate metal films 9a to 9d, and the planarization film 11 formed on the passivation film 10. (For example, a resin film that can be applied thicker than the intermediate metal film), the translucent metal film 18 formed on the planarizing film 11, and the translucent metal film 18. Up Metal film contains a (light reflective metal film) 12c · 12d. The translucent metal film 18 is made of, for example, tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), indium zinc oxide (IZO), or the like.

  The semiconductor film 7x is in contact with the middle metal films 9a and 9b, and the middle metal film 9b is connected to the upper metal film 12c through a contact hole that penetrates the passivation film 10 and the planarizing film 11. That is, the lower metal film 5x, the gate insulating film 6, the semiconductor film 7x, and the middle metal films 9a and 9b constitute a TFT.

  The semiconductor film 7y is in contact with each of the middle metal films 9c and 9d, and the middle metal film 9d is connected to the upper metal film 12d through a contact hole that penetrates the passivation film 10 and the planarizing film 11. That is, the lower metal film 5y, the gate insulating film 6, the semiconductor film 7y, and the middle metal films 9c and 9d constitute a TFT.

  As shown in FIGS. 1 to 3, the mechanical layer 20 of the optical shutter substrate 1 is provided with an optical shutter mechanism 21 including a shutter body 28, shutter beams 23 x and 23 y, and drive beams 22 x and 22 y.

  FIG. 3 is a perspective view showing the configuration of the optical shutter mechanism. As shown in FIG. 2 and FIG. 3, the shutter body 28 protrudes toward the active matrix layer 19 and has a rib-shaped portion 28r that is a recess recessed toward the active matrix layer side when viewed from the light source BL side, and an opening 28k. Including. The rib-shaped portion 28r is light-shielding and has a folded plate structure for increasing the strength of the shutter body 28. Shutter beams 23x and 23y are connected to both sides of the shutter body 28, and the drive beam 22y is connected to the middle metal film 9d (TFT conductive electrode) via the drive anchor 22d and the upper metal film 12d.

  In the optical shutter mechanism 21, as shown in FIGS. 1 and 2A, when the shutter body 28 is drawn toward the drive beam 22y by the potential control of the drive beams 22x and 22y, the optical shutter mechanism 21 is opened (open). As shown in FIG. 2B, when the shutter body 28 is pulled toward the drive beam 22x by the potential control of the drive beams 22x and 22y, the closed state is brought about.

  In the optical shutter device SD shown in FIGS. 1 and 2, a counter substrate 30 formed by forming a counter light-shielding film 33 such as metal on a glass substrate 61 is provided between the optical shutter substrate 1 and the backlight BL. A light transmission path LW is formed from the slit 33s formed in the light shielding film 33 to the lower surface of the optical shutter substrate in a direction perpendicular to the substrate surface.

  Then, as shown in FIG. 2A, when the opening 28k of the shutter body 28 overlaps the light transmission path LW (the optical shutter mechanism is in an open state), the backlight light is visually recognized through the light shutter mechanism and the light transmission path LW. When the light is emitted toward the person 50 and a portion other than the opening of the shutter body 28 overlaps the light transmission path LW (the optical shutter mechanism is in the closed state) as shown in FIG. 2B, the backlight light is blocked.

  In the first embodiment, the upper layer portion of the mechanical layer 20 and the optical shutter mechanism are formed as shown in FIGS. That is, in step S101, the translucent metal film 18 is formed (film formation and patterning) on the planarizing film 11, and in step S102, the upper metal film (light reflective metal film) is formed on the translucent metal film 18. 12 is formed (film formation and patterning). Thereby, the translucent metal film 18 and the upper metal film 12 come into contact with each other and are electrically connected.

  In step S103, a sacrificial film 24, which is a negative resist, is formed so as to cover the translucent metal film 18 and the upper metal film 12 of the active matrix layer 19, and is patterned by photolithography. In step S <b> 103, a contact hole is formed in the sacrificial film 24.

  Here, as shown in FIG. 4, the entire opening of the contact hole CH overlaps the translucent metal film 18 and the edge of the upper metal film 12 cuts through the opening of the contact hole 11 in a top view. Half of the opening of CH overlaps with the upper metal film 12 and the translucent metal film 18, and the other half of the opening of the contact hole CH does not overlap with the upper metal film 12, but overlaps only with the translucent metal film 18. The translucent metal film 18, the upper metal film 12, and the contact hole CH are formed.

  More specifically, as shown in FIG. 5A, a photomask PM is disposed above the contact hole formation position, and the sacrificial film 24 (negative resist) is exposed. Then, in the sacrificial film 24 at the contact hole formation position, the region 24x away from the edge of the upper metal film 12 is exposed by light reflection of the upper metal film 12, while the vicinity of the edge of the upper metal film 12 and the upper metal The region 24y without the film 12 is not affected by the light reflection of the upper metal film 12 (not exposed). Therefore, when the sacrificial film 24 (negative resist) is developed, the vicinity of the edge of the upper metal film 12 and the area 24y without the upper metal film 12 are removed (the area 24x away from the edge of the upper metal film 12 remains), and the contact hole The upper metal film 12 and the translucent metal film 18 are exposed at the bottom of the CH (FIG. 5B).

  In step S104 in FIG. 3, the translucent metal film 18 and the upper metal film 12 exposed at the bottom of the contact hole CH are treated (FIG. 5C), and the conductive film 26 to be formed later and the translucent film are translucent. The conduction with the metal film 18 is ensured. Specifically, ashing using plasma or the like is performed on the surface of the translucent metal film 18 and the surface of the upper metal film 12 affected by the photolithography of the sacrificial film 24 to remove organic substances such as resist residues. .

In step S105, the conductive film 26 (for example, n + amorphous silicon or the like, such as phosphorus or arsenic) that conducts an electrical signal so as to cover the translucent metal film 18 and the upper metal film 12 treated at the bottom of the contact hole CH. (Impurity semiconductor doped with a high concentration of n-type impurity) and the light-transmitting metal film 18 and the upper metal film 12 are brought into contact with the conductive film 26 in the contact hole CH. In step S106, a light-shielding metal film 27 (for example, a molybdenum nitride film) is formed on the conductive film 26, and in step S107, a protective film 32 is formed (FIG. 5D). The light shielding metal film 27 may be a metal film such as Al, Cu, Ti, Mo, MoN or an alloy thereof, or a film in which these metal films are laminated. The protective film 32 may be an inorganic film such as silicon oxide (SiO ₂ ), silicon nitride (SiNx), or silicon oxynitride (SiNO).

  In subsequent step S108, a resist is formed on the protective film 32 by a photolithography process. In step S109, the protective film 32 is dry-etched using the resist as a mask. In subsequent step S110, the light-shielding metal film 27 is dry-etched. .

  In step S111, the conductive film 26 is dry-etched, and in step 112, the sacrificial film 24 and the resist are removed (released) to form an anchor 29 (shutter anchor or driving anchor) (FIG. 5E).

  Thus, the first contact region CR1 in which the translucent metal film 18 and the conductive film 26 are in contact with each other, and the second contact region CR2 in which the translucent metal film 18 and the upper metal film (light reflective metal film) 12 are in contact with each other. The optical shutter mechanism 21 including the conductive film 26 and the upper metal film 12 can be electrically connected. Here, the first contact region CR1 and the second contact region CR2 are in contact with each other. That is, the conductive film 26 and the translucent metal film 18 are overlapped with each other in the first contact region CR1, so that the conductive film 26 and the translucent metal film 18 are in contact with each other. In the second contact region CR2, the translucent metal film is formed. 18, the upper metal film (light reflective metal film) 12 and the conductive film 26 overlap, and the upper metal film 12 is in contact with the translucent metal film 18 and the conductive film 26.

  In the first embodiment, as shown in FIG. 4, a part of the opening of the contact hole CH overlaps with the upper metal film 12 and the remaining part of the opening of the contact hole CH does not overlap with the upper metal film 12 in the top view (translucency) The translucent metal film 18, the upper metal film 12, and the contact hole CH are disposed so as to overlap only the metal film 18. Then, in the sacrificial film 24 at the contact hole formation position, the vicinity of the edge of the upper metal film 12 and the region 24y without the upper metal film 12 are not affected by the light reflection of the upper metal film 12 (FIG. 5A 5), the sacrificial film 24 can be removed until the upper metal film 12 and the translucent metal film 18 are exposed at the bottom of the contact hole CH (at least the translucent metal film). 18, no sacrificial film residue remains).

  As a result, as shown in FIGS. 5D and 5E, the conductive film 26 which becomes a part of the anchor (shutter anchor or drive anchor) and the metal film of the active matrix layer (the upper metal film 12 and the translucent material). Contact failure with the metal film 18) can be avoided.

  Furthermore, in the first embodiment, ashing is performed on the translucent metal film 18 and the upper metal film 12 exposed at the bottom of the contact hole CH as a treating process (FIG. 5C). Thereby, the surface of the translucent metal film 18 and the surface of the upper metal film 12 affected by the photolithography of the sacrificial film 24 can be treated, and the conductive film 26, the upper metal film 12, and the translucent metal can be treated. The contact with the film 18 can be made more reliable.

  In Embodiment 1, since the conductive film 26 is in contact with the upper metal film 12 and the translucent metal film 18, the contact resistance can be reduced.

  On the other hand, in the reference form shown in FIG. 10A, since the entire opening of the contact hole CH overlaps the upper metal film 12, the sacrificial film 24 (negative) at the contact hole forming position as shown in FIG. The entire resist is affected by the light reflection of the upper metal film 12. As a result, as shown in FIG. 10C, the sacrificial film 24 may not be removed until the upper metal film 12 is exposed at the bottom of the contact hole CH (the contact hole CH is filled with a negative resist). Therefore, there is a risk of contact failure between the conductive film (amorphous silicon film) that becomes a part of the optical shutter mechanism and the upper metal film 12 (metal film of the active matrix layer).

[Embodiment 2]
In the second embodiment, as shown in FIG. 6, the transparent metal is arranged so that the entire opening of the contact hole CH does not overlap the upper metal film 12 (the entire opening overlaps only the transparent metal film 18) in the top view. The film 18, the upper metal film 12, and the contact hole CH are disposed. Then, as shown in FIG. 7A, the entire sacrificial film 24 at the contact hole forming position is not affected by the light reflection of the upper metal film 12, so that the translucent metal as shown in FIG. 7B. The sacrificial film 24 can be removed (so that no sacrificial film residue remains in the contact hole) until the film 18 is exposed at the bottom of the contact hole CH.

  Further, as shown in FIG. 7C, oxygen ashing is performed on the translucent metal film 18 exposed at the bottom of the contact hole CH, and the surface of the translucent metal film 18 affected by the photolithography of the sacrificial film 24 is obtained. Treat.

  Then, a conductive film 26 (conductive film) is formed so as to cover the translucent metal film 18 treated at the bottom of the contact hole CH, and the translucent metal film 18 and the conductive film 26 ( A conductive film). Next, a light-shielding metal film 27 (light-shielding metal film) is formed on the conductive film 26, and then a protective film 32, which is a protective film, is formed (FIG. 7D). Next, the conductive film 26 is dry-etched, the sacrificial film 24 and the resist are removed (released), and an anchor 29 (shutter anchor or drive anchor) is formed (FIG. 7E).

  As a result, as shown in FIGS. 7D and 7E, contact failure between the conductive film 26 serving as a part of the anchor and the metal film (translucent metal film 18) of the active matrix layer is avoided. be able to.

  In the second embodiment, the first contact region CR1 where the translucent metal film 18 and the conductive film 26 are in contact with each other, and the second contact region where the translucent metal film 18 and the upper metal film (light reflective metal film) 12 are in contact with each other. CR2 can be provided, and the optical shutter mechanism 21 including the conductive film 26 and the upper metal film 12 can be electrically connected. Here, the first contact region CR1 and the second contact region CR2 do not contact each other. That is, the conductive film 26 and the translucent metal film 18 are overlapped with each other in the first contact region CR1, so that the conductive film 26 and the translucent metal film 18 are in contact with each other. In the second contact region CR2, the translucent metal film is formed. 18 and the upper metal film (light reflective metal film) 12 are in contact with each other, but the upper metal film 12 and the conductive film 26 are not in contact with each other.

[Embodiment 3]
In the third embodiment, as shown in FIG. 8, when the bottom of the contact hole CH is viewed from above, the translucent metal film 18 and the upper layer are arranged so that the translucent metal film 18 surrounds the floating metal film 12. A metal film 12 and a contact hole CH are disposed. As a result, the sacrificial film 24 on the upper-layer metal film 12 and the sacrificial film 24 around the upper-layer metal film 12 are not affected by the light reflection of the upper-layer metal film 12. The sacrificial film 24 can be removed until the light metal film 18 is exposed at the bottom of the contact hole CH. Thereby, the contact resistance can be reduced while the contact between the conductive film 26 and the upper metal film 12 and the translucent metal film 18 is made more reliable.

[Embodiment 4]
As illustrated in FIG. 9, the 3D (three-dimensional) printer head PF according to the fourth embodiment includes an optical shutter device SD including an optical shutter substrate 1 and a counter substrate 30 facing the optical shutter substrate 1, and a counter substrate 30. And a UV light source LS for irradiating the optical shutter substrate 1 with UV light (ultraviolet light). The UV light that has passed through the optical shutter mechanism 21 provided on the optical shutter substrate 1 is applied to the UV curable material 60.

  In the fourth embodiment, the optical shutter mechanism 21 provided on the optical shutter substrate 1 of the 3D printer head PF is manufactured as shown in FIGS. 3 to 8, so that the anchor 29 (shutter anchor or drive anchor) of the optical shutter mechanism 21 is used. Contact failure with the metal film (translucent metal film 18) of the active matrix layer is less likely to occur, and an accurate 3D printer head PF can be realized.

[Summary]
An optical shutter substrate manufacturing method according to an aspect 1 of the present invention includes an active matrix layer including a semiconductor film, a translucent metal film, and a light reflective metal film, and an optical shutter mechanism disposed thereon. A first step of forming a light reflective metal film on the translucent metal film, a second step of forming a sacrificial film on the light reflective metal film, and a contact hole in the sacrificial film And forming a part of the optical shutter mechanism so as to be in contact with the light-transmitting metal film exposed in the third step. And a fourth step of forming a conductive film.

  According to the manufacturing method of the optical shutter substrate, the risk of contact hole formation failure due to light reflection of the light reflective metal film is reduced, and the conductive film and the metal film of the active matrix layer that are part of the optical shutter mechanism are reduced. The poor contact is less likely to occur.

  The manufacturing method of the optical shutter substrate according to aspect 2 of the present invention may be a method of exposing the translucent metal film to a part of the bottom of the contact hole in the third step in the aspect 1.

  The method for manufacturing an optical shutter substrate according to aspect 3 of the present invention may be a method of exposing the translucent metal film to the entire bottom of the contact hole in the third step in the aspect 1.

  The manufacturing method of the optical shutter board | substrate which concerns on aspect 4 of this invention WHEREIN: In any one of the said aspects 1-3, ashing is performed between the said 3rd and 4th process, and the said exposed translucency is carried out. A technique characterized by treating the surface of the metal film can be used.

  The manufacturing method of the optical shutter substrate according to aspect 5 of the present invention is the method according to aspect 2 in which the light-transmitting metal film and the light-reflecting metal film are exposed at the bottom of the contact hole in the third step. be able to.

  The method for manufacturing an optical shutter substrate according to Aspect 6 of the present invention may be any one of Aspects 1 to 5, wherein the sacrificial film is a negative resist.

  A manufacturing method of an optical shutter substrate according to aspect 7 of the present invention includes, in any one of the above aspects 1 to 6, a fifth step of forming a light-shielding metal film on the conductive film after the fourth step. It can be a technique including.

  The method for manufacturing an optical shutter substrate according to aspect 8 of the present invention may be a method including the sixth step of forming a protective film on the light-shielding metal film after the fifth step in the aspect 7. .

  The method for manufacturing an optical shutter substrate according to aspect 9 of the present invention may be a method including the seventh step of removing the sacrificial film after the sixth step in the aspect 8.

  The method for manufacturing an optical shutter substrate according to aspect 10 of the present invention is such that, in the aspect 9, a driving beam including a conductive film in contact with the translucent metal film is formed by the seventh step. it can.

  The method for manufacturing an optical shutter substrate according to aspect 11 of the present invention may be the method according to aspect 10 in which the drive beam has a light shielding metal film sandwiched between the conductive film and the protective film.

  A manufacturing method of an optical shutter substrate according to an aspect 12 of the present invention is the optical shutter substrate according to any one of the above aspects 1 to 11, wherein the light reflective metal film is electrically connected to a transistor having the semiconductor film as a channel. It can also be set as the structure which is.

  The method for manufacturing an optical shutter substrate according to aspect 13 of the present invention may be any one of the above aspects 1 to 12, wherein the conductive film is an n + amorphous silicon film.

  The manufacturing method of the optical shutter substrate according to the fourteenth aspect of the present invention can be any one of the first to thirteenth aspects in which the semiconductor film is made of an oxide semiconductor.

  The method for manufacturing an optical shutter substrate according to aspect 15 of the present invention is the method of manufacturing the optical shutter substrate according to aspect 3, wherein the light-transmitting metal film surrounds the floating island-like light reflective metal film when the contact hole opening is viewed from above. It can be a technique.

  An optical shutter substrate according to an aspect 16 of the present invention includes an active matrix layer including a semiconductor film, a light-transmitting metal film, and a light-reflecting metal film, and an optical shutter mechanism including the conductive film disposed on the active matrix layer. A first contact region in contact with the translucent metal film and the conductive film, and a second contact region in contact with the translucent metal film and the light reflective metal film. Is provided.

  The optical shutter substrate according to aspect 17 of the present invention is the structure according to aspect 16, wherein the first and second contact regions are in contact with each other.

  The optical shutter substrate according to aspect 18 of the present invention is the optical shutter substrate according to aspect 17, wherein the light-transmissive metal film, the light-reflective metal film, and the conductive film overlap each other in the second contact region. The metal film is in contact with the translucent metal film and the conductive film.

  The optical shutter substrate according to aspect 19 of the present invention is the structure according to aspect 16, wherein the first and second contact regions are not in contact with each other.

  The optical shutter substrate according to aspect 20 of the present invention is the optical shutter substrate according to any one of aspects 16 to 19, wherein a part of the conductive film is amorphous silicon doped with an n-type impurity, and the translucent metal film is formed in the first region. And the amorphous silicon are in contact with each other.

  The optical shutter substrate according to aspect 21 of the present invention is the structure according to any one of aspects 16 to 20, wherein the translucent metal film surrounds the floating island-shaped second contact region when viewed from above.

  The optical shutter substrate according to aspect 22 of the present invention is the optical shutter substrate according to any one of aspects 16 to 21, wherein the light reflective metal film is formed on an upper layer of the light transmissive metal film, and the conductive film is formed on an upper layer of the light reflective metal film. Is formed.

  The optical shutter substrate according to aspect 23 of the present invention is the structure according to aspect 22, wherein a light-shielding metal film is formed on the conductive film.

  The optical shutter substrate according to aspect 24 of the present invention is the structure according to aspect 23, in which a protective film is formed on the light-shielding metal film.

  The optical shutter substrate according to aspect 25 of the present invention is the structure according to any one of aspects 16 to 24, wherein the light-reflective metal film is electrically connected to a transistor having the semiconductor film as a channel.

  The present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

1 Optical shutter substrate 12 Upper layer metal film (light reflective metal film)
18 translucent metal film 19 active matrix layer 20 mechanical layer 21 optical shutter mechanism 22x / 22y drive beam 23x / 23y shutter beam 24 sacrificial film 26 conductive film 27 light-shielding metal film 28 shutter body 29 anchor 32 protective film 30 counter substrate CH Contact hole CR1 First contact region CR2 Second contact region

Claims (12)

An optical shutter substrate comprising an active matrix layer including a semiconductor film, a translucent metal film, and a light reflective metal film, and an optical shutter mechanism disposed on the active matrix layer and including a conductive film,
A first contact region in contact with the translucent metal film and the conductive film;
An optical shutter substrate, comprising: a translucent metal film; and a second contact region in contact with the light reflective metal film.   2. The optical shutter substrate according to claim 1, wherein the first and second contact regions are in contact with each other.   In the second contact region, the light-transmitting metal film, the light-reflective metal film, and the conductive film are overlapped, and the light-reflective metal film is in contact with the light-transmitting metal film and the conductive film. The optical shutter substrate according to claim 2, wherein:   2. The optical shutter substrate according to claim 1, wherein the first and second contact regions are not in contact with each other. Part of the conductive film is amorphous silicon doped with n-type impurities,
The optical shutter substrate according to claim 1, wherein the translucent metal film and the amorphous silicon are in contact with each other in the first contact region.   The optical shutter substrate according to claim 1, wherein when viewed from above, the translucent metal film surrounds the floating island-shaped second contact region.   The light reflecting metal film is formed on an upper layer of the translucent metal film, and the conductive film is formed on an upper layer of the light reflecting metal film. An optical shutter substrate according to the item.   The optical shutter substrate according to claim 7, wherein a light-shielding metal film is formed on the conductive film.   The optical shutter substrate according to claim 8, wherein a protective film is formed on an upper layer of the light shielding metal film.   The optical shutter substrate according to claim 1, wherein the light reflective metal film is electrically connected to a transistor having the semiconductor film as a channel. A method of manufacturing an optical shutter substrate having an active matrix layer including a semiconductor film, a translucent metal film and a light reflective metal film, and an optical shutter mechanism disposed thereon.
A first step of forming a light reflective metal film on the light transmissive metal film;
A second step of forming a sacrificial film on the light reflective metal film;
A third step of exposing the translucent metal film to the bottom of the contact hole by forming a contact hole in the sacrificial film;
And a fourth step of forming a conductive film to be a part of the optical shutter mechanism so as to be in contact with the translucent metal film exposed in the third step. Method.   12. The method of manufacturing an optical shutter substrate according to claim 11, wherein the exposed surface of the translucent metal film is treated by ashing between the third and fourth steps.

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