JP2017160088A - Diamond substrate and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a diamond substrate consisting of a diamond single crystal, capable of suppressing a difference between the highest and lowest parts of a substrate in the thickness direction thereof within a predetermined range and capable of suppressing a dislocation density; and a method for manufacturing the substrate.SOLUTION: The method for manufacturing a diamond substrate comprises: preparing a base substrate; forming a plurality of columnar diamonds consisting of a diamond single crystal on one surface of the base substrate; growing diamond single crystals from the head ends of the columnar diamonds; performing the coalescence of the diamond single crystals grown from the head ends of the columnar diamonds to form a diamond substrate layer; separating the diamond substrate layer from the base substrate; and manufacturing a diamond substrate from the diamond substrate layer. A difference between the highest and lowest parts of the diamond substrate in the thickness direction thereof is more than 0 μm and 485 μm or less, and a dislocation density over the entire front surface of the diamond substrate is more than 0 cmand 10cmor less.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a diamond substrate and a method for manufacturing the diamond substrate.

  Diamond is unique as a semiconductor material, and has many excellent characteristics. Therefore, a substrate formed from diamond is expected as an ultimate semiconductor substrate.

  In order to function as a semiconductor material, control of electric resistance is important. As a method for controlling the conductivity of diamond, it is possible to impart conductivity by doping as in the case of other semiconductor materials, and development of a control technique thereof is being promoted. Diamond made of carbon itself is an insulator, but it is known that resistance can be controlled by doping with a dopant such as boron or phosphorus.

  Furthermore, research on high output power devices having high dielectric breakdown strength using high insulation of diamond and conductivity control by doping is in progress. In the future, establishment of these conductivity control technologies and mass productivity will be required at the same time. In order to increase mass productivity, a diamond substrate having a large size and ensuring uniformity of characteristics is required.

  The uniformity of electrical resistance is one of the most important characteristics related to device reliability. In particular, considering application to a high-output power device using the high dielectric breakdown strength of diamond, a diamond substrate used as a base substrate at the time of device formation is required to have a high electrical resistance over the entire surface. In power devices using SiC or the like, it is known that dislocations penetrating in the thickness direction of the substrate affect the decrease in breakdown voltage (see, for example, Non-Patent Document 1). Dislocations also affect the decrease in breakdown voltage in a diamond substrate. The result which suggests the possibility of exerting is reported (for example, refer nonpatent literature 2).

  On the other hand, there are the following problems with respect to the enlargement of the diamond substrate. Conventional diamond device research has used a single-crystal diamond base substrate fabricated by high-temperature and high-pressure synthesis. However, single crystal diamond produced by the high-temperature and high-pressure synthesis method is small in size, and although the device characteristics can be verified, its mass productivity has not been discussed.

  Recently, however, development of a heteroepitaxial growth technique has been promoted to increase the size of the diamond substrate. An example of the heteroepitaxial growth technique is disclosed in Patent Document 1, for example. In Patent Document 1, a plurality of columnar diamonds made of a diamond single crystal are formed on one side of a base substrate, a diamond single crystal is grown from the tip of each columnar diamond, coalescence is performed, and a diamond substrate made of a large single crystal diamond is formed. The technology to make is public. By using this method, the stress accumulated during heteroepitaxial growth can be released by breaking the columnar diamond, and a large diamond substrate can be realized.

P. G. Neudeck, et. Al., IEEE Trans. Electron Devices, 46, 478 (1999) January 2009 SEI Technical Review No. 174 (87)

International Publication No. 2015/046294

  In heteroepitaxial growth using microwave PCVD (Plasma-enhanced Chemical Vapor Deposition) or DC PCVD, the MgO substrate, which is the base substrate, is placed on a water-cooled table in order to release high heat from the plasma. However, warpage occurs in diamond due to a difference in physical properties such as a difference in thermal expansion coefficient and a difference in lattice constant between MgO used for the base substrate and diamond. In particular, the warpage increases as the size increases. Therefore, in a conventional heteroepitaxial growth method using an MgO substrate that is in close contact with a water-cooled table at room temperature, a place that does not come into contact with the water-cooled table occurs in the MgO substrate surface due to warpage that occurs during growth.

  The portion that is not in contact with the water-cooled table cannot release the heat from the plasma, and thus becomes hotter than the portion that is in contact with the water-cooled table. The larger the size, the greater the warpage of the diamond substrate and the greater the temperature difference within the MgO substrate surface. As a result, the temperature difference on the diamond film surface on the MgO substrate surface increases.

  Furthermore, although depending on the growth conditions of diamond, for example, when the substrate temperature is 875 degrees or less at a methane concentration of 4%, or when the substrate temperature is 880 degrees or more at a methane concentration of 4%, the crystal quality of diamond decreases. Dislocation density increases. Therefore, although a diamond substrate with few threading dislocations is required as described above, a reduction in dislocation density has not been realized.

  Therefore, in order to reduce the dislocation density, it is required to keep the unevenness of the growing diamond substrate small.

The present invention has been made in view of the above circumstances, and is made of a diamond single crystal. The difference between the highest part and the lowest part in the thickness direction of the substrate can be suppressed within a predetermined range (over 0 μm to 485 μm or less). Another object of the present invention is to provide a diamond substrate capable of suppressing the dislocation density within a predetermined range (greater than 0 cm ⁻² and 10 ⁹ cm ⁻² or less) and a method for manufacturing the substrate.

The above problems are solved by the present invention described below. That is, the diamond substrate of the present invention is composed of a diamond single crystal, the difference between the highest part and the lowest part in the thickness direction of the diamond substrate is more than 0 μm and less than 485 μm, and the dislocation density over the entire surface of the diamond substrate is 0 cm ^{−. 2,} wherein the ultrasonic and is 10 ⁹ cm ^-2 or less.

The method for producing a diamond substrate of the present invention provides a base substrate, forms a plurality of columnar diamonds made of a diamond single crystal on one side of the base substrate, grows the diamond single crystal from the tip of each columnar diamond, Each diamond single crystal grown from the tip of the diamond is coalesced to form a diamond substrate layer, the diamond substrate layer is separated from the underlying substrate, and the diamond substrate is manufactured from the diamond substrate layer. The difference between the portion and the lowest portion is more than 0 μm and less than 485 μm, and the dislocation density over the entire surface of the diamond substrate is more than 0 cm ^{−2 and not} more than 10 ⁹ cm ⁻² .

  Due to the above-described characteristics, in the diamond substrate and the method for manufacturing the same according to the present invention, a diamond single crystal is grown using columnar diamond to reduce warpage of the growing diamond single crystal and the thickness of the grown diamond single crystal. The difference between the highest part and the lowest part in the direction can be suppressed within the range of more than 0 μm and less than 485 μm, the contact between the cooling table and the base substrate becomes uniform, and the in-plane temperature distribution becomes uniform, as described above. Thus, the temperature unevenness was reduced, and the growth environment could be controlled over the entire surface.

Since the warping of the growing diamond single crystal can be reduced, the warping of the diamond substrate formed from the diamond single crystal after the growth can also be reduced. Therefore, the difference between the highest part and the lowest part of the substrate can be kept within a range of more than 0 μm and less than 485 μm, and by reducing the difference, the diamond substrate has a dislocation density of more than 0 cm ^{−2 and} more than 10 ⁹ cm ⁻² over the entire substrate surface. Was able to be realized.

It is a perspective view showing typically an example of a diamond substrate concerning this embodiment. It is a sectional side view which shows typically an example of the curvature form of the diamond substrate which concerns on this embodiment. It is a sectional side view which shows typically the other example of the curvature form of the diamond substrate which concerns on this embodiment. It is a sectional side view which shows typically the further another example of the curvature form of the diamond substrate which concerns on this embodiment. It is model explanatory drawing which shows the base substrate which concerns on embodiment of the manufacturing method of the diamond substrate which concerns on this embodiment. It is a schematic explanatory drawing which shows the state of the base substrate with a diamond layer of embodiment of the manufacturing method of a diamond substrate. It is a schematic diagram which shows the base substrate in which the some columnar diamond was formed. It is a perspective view which shows the base substrate in which the some columnar diamond was formed. It is a schematic diagram which shows the base substrate with a columnar diamond in which the diamond substrate layer was formed. It is a perspective view which shows the base substrate with a columnar diamond in which the diamond substrate layer was formed. FIG. 3 is a schematic explanatory view showing a diamond substrate layer, a base substrate, and each columnar diamond that have been warped in a convex shape due to a tensile stress. It is a schematic diagram showing a state in which columnar diamond is destroyed and a diamond substrate layer and a base substrate are separated. It is a schematic diagram which shows another form of the base substrate in which the some columnar diamond was formed.

The first feature of the present embodiment is that the diamond substrate is composed of a diamond single crystal, and the difference between the highest and lowest parts in the thickness direction of the diamond substrate is more than 0 μm and less than 485 μm, and the entire surface of the diamond substrate is The dislocation density over the range of 0 cm ⁻² and 10 ⁹ cm ⁻² or less.

The second feature is that a base substrate is prepared, a plurality of columnar diamonds made of diamond single crystal are formed on one side of the base substrate, a diamond single crystal is grown from the tip of each columnar diamond, and grown from the tip of each columnar diamond. Each diamond single crystal is coalesced to form a diamond substrate layer, the diamond substrate layer is separated from the base substrate, and the diamond substrate is manufactured from the diamond substrate layer. And the dislocation density over the entire surface of the diamond substrate was more than 0 cm ^{−2 and not} more than 10 ⁹ cm ⁻² .

  According to these structures, a diamond single crystal is grown using columnar diamond to reduce warpage of the growing diamond single crystal, and between the highest and lowest portions in the thickness direction of the grown diamond single crystal. It becomes possible to suppress the difference within the range of more than 0 μm and less than 485 μm, the contact between the cooling table and the base substrate becomes uniform, the temperature distribution in the surface becomes uniform, and the temperature unevenness as described above is reduced, The growth environment could be controlled over the entire surface.

Since the warping of the growing diamond single crystal can be reduced, the warping of the diamond substrate formed from the diamond single crystal after the growth can also be reduced. Therefore, the difference between the highest part and the lowest part of the substrate can be kept within a range of more than 0 μm and less than 485 μm, and by reducing the difference, the diamond substrate has a dislocation density of more than 0 cm ^{−2 and} more than 10 ⁹ cm ⁻² over the entire substrate surface. Was able to be realized.

  Hereinafter, the diamond substrate according to the present invention will be described in detail with reference to FIG. The shape of the diamond substrate according to the present invention in the planar direction may be a square or the like. However, the circular shape is preferable from the viewpoint of easy use in the manufacturing process for applications such as surface acoustic wave elements, thermistors, and semiconductor devices. In particular, a circular shape provided with an orientation flat surface (orientation flat surface) as shown in FIG. 1 is preferable.

  If the shape of the diamond substrate 1 (hereinafter simply referred to as “substrate 1” if necessary) is circular or circular with an orientation flat surface, the diameter should be 0.4 inches (about 10 mm) or more. To preferred. Further, from the viewpoint of increasing the size of a practical substrate, the diameter is preferably 2 inches (about 50.8 mm) or more, more preferably 3 inches (about 76.2 mm) or more, and 6 inches (about 152.4 mm) or more. More preferably it is. In consideration of the dimensional tolerance of the diamond substrate 1, in the present application, the range of 49.8 mm to 50.8 mm, which is obtained by subtracting 1.0 mm corresponding to 2% of 50.8 mm, is defined as 2 inches.

  The upper limit of the diameter is not particularly limited, but is preferably 8 inches (about 203.2 mm) or less from a practical viewpoint. Moreover, in order to manufacture many elements and devices at once, a square diamond substrate having an area equal to or larger than 2 inches in diameter may be used.

  The thickness t of the diamond substrate 1 can be arbitrarily set, but it is preferably 3.0 mm or less as a self-supporting substrate, and more preferably 1.5 mm or less for use in an element or device production line. 1.0 mm or less is more preferable. On the other hand, the lower limit of the thickness t is not particularly limited, but is preferably 0.05 mm or more and 0.3 mm or more from the viewpoint of ensuring the rigidity of the diamond substrate 1 and preventing the occurrence of cracks, tears or cracks. It is more preferable.

  Here, the “self-supporting substrate” or “self-supporting substrate” in the present invention refers to a substrate not only capable of holding its own shape but also having a strength that does not cause inconvenience in handling. In order to have such strength, the thickness t is preferably 0.3 mm or more. Since diamond is an extremely hard material, the upper limit of the thickness t as a self-standing substrate is preferably 3.0 mm or less in consideration of easiness of cleavage after formation of elements and devices. The thickness t is most preferably 0.5 mm or more and 0.7 mm or less (500 μm or more and 700 μm or less) as the thickness of the substrate that is most frequently used as an element or device and is free-standing.

  The diamond crystal forming the diamond substrate 1 is preferably a diamond single crystal. The diamond single crystal may be any of Ia type, Ib type, IIa type, or IIb type. However, when the diamond substrate 1 is used as a substrate of a semiconductor device, the amount of crystal defects and strain generated or the half value of the X-ray rocking curve. From the viewpoint of the overall width, type IIa is more preferable. Further, the diamond substrate 1 is formed from a single diamond single crystal, and there is no bonding boundary on the surface 2 where a plurality of diamond single crystals are bonded.

  The surface 2 of the diamond substrate 1 is subjected to lapping, polishing, or CMP (Chemical Mechanical Polishing) processing. On the other hand, the back surface of the diamond substrate 1 is lapped and / or polished. Desirably, it is preferable that the front surface 2 and the back surface are processed under the same conditions from the viewpoint of further ensuring flatness as a substrate. The surface 2 is processed mainly to achieve a flat substrate shape, and the back surface is processed mainly to achieve a desired thickness t. Further, since the surface roughness Ra of the surface 2 is preferably such that an element or device can be formed, it is preferably formed to be less than 1 nm, and more preferably to be 0.1 nm or less that is flat at the atomic level. . Ra is measured by a surface roughness measuring machine.

  When the diamond substrate 1 is a single crystal, the plane orientation of the crystal plane of the surface 2 may be any of (111), (110), and (100), and is not limited to these plane orientations.

  When the diamond substrate 1 is formed of a single diamond single crystal, there is no bonding boundary obtained by bonding a plurality of diamond single crystals on the surface 2, so that deterioration of crystal quality at the boundary portion is prevented. Therefore, when the diamond substrate 1 is formed of a single diamond single crystal, the full width at half maximum (FWHM) of the rocking curve by the X-ray on the surface 2 (particularly (100)) is provided. Can be realized for 300 seconds or less over the entire surface 2.

  Further, the full width at half maximum can be 100 seconds or less, or more preferably 50 seconds or less, over the entire surface 2. Therefore, it is possible to provide a diamond substrate 1 of higher quality.

  Although the diamond substrate 1 according to the present embodiment is formed into a flat plate shape in which the front surface 2 and the back surface are flat and parallel in appearance, the shape when viewed from the side is roughly divided into three forms. And has any one of the three forms.

  As shown in FIG. 2, the first form is a form in which the diamond substrate 1 warps monotonously from the outer edge toward the center. When viewed from the side of the substrate 1, the diamond substrate 1 is monotonically symmetrical from the center axis C of the substrate 1. It is a form that warps. Diamond is an extremely hard and difficult to process material. However, by warping the diamond substrate 1 monotonously, it is possible to reduce the polishing cost and reduce the processing amount.

  As shown in FIG. 3, the second form is a form in which the diamond substrate 1 warps non-monotonically from the outer edge toward the center. It is an asymmetric and non-monotonic form. Since the diamond substrate 1 is warped non-monotonously as described above, it is possible to perform a polishing process by applying a large pressure, so that the polishing process time can be shortened.

  The third form is a form in which the diamond substrate 1 has undulations as shown in FIG. The waviness is a state where at least one warp in the convex direction and the concave direction appears in the thickness direction of the substrate 1 when the substrate 1 is viewed from the side surface, and the convex and concave portions are mixed on the entire surface of the substrate. It points to. Thus, by making the diamond substrate 1 into a form having waviness, the amount of warpage itself can be reduced, so that the occurrence of substrate cracking during polishing can be prevented. In addition, since polishing can be performed by applying a large pressure, the polishing time can be shortened. At the same time, the temperature in the surface of the diamond substrate can be made more uniform during heating during the formation of a functional thin film (for example, a semiconductor film), thus also suppressing the occurrence of in-plane variations in the characteristics of the semiconductor film. It becomes possible.

Furthermore, in the diamond substrate 1 of the present invention, the difference between the highest portion and the lowest portion in the thickness direction of the substrate 1 is set to be greater than 0 μm and less than 485 μm in each of the warped forms or waviness forms of FIGS. The dislocation density over the entire surface 2 of the substrate 1 is in the range of more than 0 cm ^{−2 and not} more than 10 ⁹ cm ⁻² .

  The difference in the diamond substrate 1 in FIG. 2 is the amount of warpage ΔH between the outer edge and the center. That is, in the warped form of the substrate 1 in FIG. 2, the back surface portion at the center of the substrate 1 is the highest portion in the thickness direction, and the outer edge is the lowest portion.

  On the other hand, the difference in the diamond substrate 1 in FIG. 3 is the warp amount ΔH between the outer edge and the highest portion. In the diamond substrate 1 of FIG. 3, the highest portion is not necessarily the center of the substrate. In the warpage form of the substrate 1 in FIG. 2, the difference between the highest back surface portion and the outer edge in the thickness direction is the warpage amount ΔH.

  Further, the difference in the diamond substrate 1 in FIG. 4 is the difference between the highest part and the lowest part due to waviness in the thickness direction of the diamond substrate 1. In the diamond substrate 1 of FIG. 4, the difference between the highest back surface portion and the lowest back surface portion in the thickness direction is the warp amount ΔH.

  In the present application, the “thickness direction” is defined as a normal direction perpendicular to the surface direction of the highest portion of the diamond substrate 1 (the tangential direction of the highest surface portion).

Further, the dislocation density over the entire surface 2 of the substrate 1 is more than 0 cm ^{−2 and not} more than 10 ⁹ cm ⁻² .

  In the diamond substrate 1 of the present invention, a variation having such warpage or undulation and a variation in dislocation density over the entire surface of the substrate 1 are allowed. However, the difference between the highest part and the lowest part and the variation in the dislocation density over the entire surface of the substrate 1 fall within a certain range.

By keeping the difference within the range of 0 μm to 485 μm in this way, the temperature in the diamond substrate surface can be made more uniform during heating during the formation of a functional thin film (for example, a semiconductor film). Also, it is possible to suppress the occurrence of in-plane variation in the characteristics of the semiconductor film. Furthermore, by accommodating the difference below 0μm ultra 485Myuemu, the dislocation density over the entire surface of the diamond substrate 1 0 cm ^-2 ultrasonic and 10 ⁹ cm ^-2 can be suppressed to below.

If the difference of the substrate 1 is more than 485 μm, the distance to the heater is locally different when the diamond substrate 1 is heated, so that the in-plane uniformity of the substrate temperature is lowered and the occurrence of in-plane variations in the characteristics of the semiconductor film is also suppressed. Is impossible. Therefore, the dislocation density cannot be suppressed to 10 ⁹ cm ^-2 or less.

  The dislocation density can be detected by measuring with a transmission electron microscope (TEM), an atomic force microscope (AFM), or a cathode luminescence (CL) image.

Further, by setting the difference of the substrate 1 to be greater than 0 μm and not greater than 130 μm, it is possible to make the variation in dislocation density over the entire surface of the substrate 1 be greater than 0 cm ⁻² and 10 ⁷ cm ⁻² . Accordingly, it is possible to further suppress the occurrence of in-plane variation in characteristics of the semiconductor film formed on the entire surface of the diamond substrate 1. At the same time, the temperature in the diamond substrate surface can be made more uniform during heating during the formation of functional thin films (for example, semiconductor films), thereby suppressing the occurrence of in-plane variations in the characteristics of the semiconductor film. I can do it.

Further, by making the difference of the substrate 1 more than 0 μm and 65 μm or less, for example, the dispersion of the dislocation density on the entire surface of the diamond substrate 1 having a diameter of 2 inches can be more than 0 cm ⁻² and 10 ⁵ cm ⁻² or less. . Therefore, it is possible to suppress the occurrence of in-plane variations in the characteristics of the semiconductor film formed on the entire surface of the diamond substrate 1. At the same time, the temperature in the diamond substrate surface can be made more uniform during heating during the formation of functional thin films (for example, semiconductor films), thereby suppressing the occurrence of in-plane variations in the characteristics of the semiconductor film. I can do it.

The present applicant not only suppresses the amount of warping of the substrate 1 (difference between the highest portion and the lowest portion in the thickness direction of the substrate 1) but also the entire surface 2 of the substrate 1 when producing the self-supporting diamond substrate 1. It was found through verification that it is necessary to suppress the dislocation density throughout. Furthermore, the difference effective in suppressing the occurrence of in-plane variation in the characteristics of the semiconductor film formed on the surface 2 of the substrate 1 and the numerical range of variation in the dislocation density are 0 μm to 485 μm, 0 cm ⁻² and 10 ⁹ cm. We also found out that ^{-2 and} below are effective.

Next, with reference to FIGS. 5-12, embodiment of the manufacturing method of the diamond substrate which concerns on this embodiment is described in detail. First, the base substrate 4 is prepared as shown in FIG. Examples of the material of the base substrate 4 include magnesium oxide (MgO), aluminum oxide (α-Al ₂ O ₃ : sapphire), Si, quartz, platinum, iridium, strontium titanate (SrTiO ₃ ), and the like.

  In addition, the base substrate 4 is used in which at least one side 4a is mirror-polished. In the diamond layer growth step to be described later, the diamond layer is grown on the mirror-polished surface side (on the surface of the one surface 4a).

  As a guide, mirror polishing is preferably performed to a surface roughness Ra of 10 nm or less. If the Ra of the single side 4a exceeds 10 nm, the quality of the diamond layer grown on the single side 4a will deteriorate. Ra is measured by a surface roughness measuring machine.

  After the base substrate 4 is prepared, a diamond layer 5 made of a diamond single crystal is grown and formed on one side 4a as shown in FIG. The growth method of the diamond layer 5 is not specifically limited, A well-known method can be utilized. As a specific example of the growth method, it is preferable to use a vapor phase growth method such as a pulsed laser deposition (PLD) method or a chemical vapor deposition (CVD) method.

  Prior to the growth of the diamond layer 5, as a pretreatment, an iridium (Ir) single crystal film may be formed on the surface of the base substrate 4, and the diamond layer 5 may be grown on the Ir single crystal film. .

  The thickness d5 of the diamond layer 5 shown in FIG. 6 is set so as to be the height of the columnar diamond to be formed, and is preferably grown to a thickness of 30 μm or more and 500 μm or less.

  Next, as shown in FIGS. 7 and 8, a plurality of columnar diamonds 6 are formed from the diamond layer 5. The columnar diamond 6 may be formed by etching, photolithography, laser processing, or the like.

  Since the diamond layer 5 is formed by heteroepitaxial growth with respect to the base substrate 4, many crystal defects are formed in the diamond layer 5, but by using a plurality of columnar diamonds 6, defects can be thinned out.

  Next, a diamond substrate layer 7 is grown and formed at the tip of the columnar diamond 6. By growing a diamond single crystal from the tip of each columnar diamond 6, the growth of the diamond single crystal can be progressed uniformly from any columnar diamond 6. And it becomes possible to start coalescence of the diamond single crystal grown from each columnar diamond 6 at the same timing by making it grow in the direction transverse to the height direction of each columnar diamond 6.

  A diamond substrate layer 7 is manufactured as shown in FIGS. 9 and 10 by coalescence of the diamond single crystals grown from each columnar diamond 6. The number of columnar diamonds 6 that can be formed varies depending on the diameter of the base substrate 4, and the number of columnar diamonds 6 can be increased as the diameter of the base substrate 4 increases.

  Furthermore, by setting the pitch between the columnar diamonds 6 to the same interval (pitch) as the growth of the nuclei of the diamond single crystals, the diamond single crystal is grown from each columnar diamond, so that the surface quality of the diamond substrate layer 7 is improved. Is improved, and a full width at half maximum of 300 seconds or less can be realized over the entire surface.

  Furthermore, the full width at half maximum can be 100 seconds or less, or more preferably 50 seconds or less over the entire surface.

  By setting the diameter and pitch of the columnar diamond 6 to 10 μm or less, the surface quality of the diamond substrate layer 7 was improved, and a full width at half maximum of 300 seconds or less could be realized.

  After the diamond substrate layer 7 is formed, the diamond substrate layer 7 is separated from the base substrate 4 at the columnar diamond 6 portion. In the present embodiment, during the growth of the diamond substrate layer 7, stress is generated in the columnar diamond 6 due to warpage generated in the base substrate 4 and the diamond substrate layer 7, and the columnar diamond 6 is destroyed by the stress, and the diamond substrate 7 is used as the base substrate. Separate from 4.

  For example, as shown in FIG. 11, the base substrate 4 made of MgO single crystal has a thermal expansion coefficient and a lattice multiplier larger than that of the diamond substrate layer 7 made of diamond single crystal. Therefore, during cooling after the growth of the diamond substrate layer 7, a tensile stress is generated on the diamond substrate layer 7 side from the center portion toward the end portion as shown by the arrows. The tensile stress is generated by a stress generated by a difference in lattice constant between the base substrate 4 and the diamond substrate layer 7 and / or a difference in thermal expansion coefficient between the base substrate 4 and the diamond substrate layer 7. As a result, as shown in FIG. 8, the diamond substrate layer 7, the base substrate 4, and each columnar diamond 6 as a whole warp so that the diamond substrate layer 7 side is convex.

  Furthermore, a large tensile stress is applied to each columnar diamond 6 and a crack is generated in each columnar diamond 6. As the cracks are generated, the columnar diamond 6 is broken as shown in FIG. 12 and the diamond substrate layer 7 is separated from the base substrate 4.

  Even if the stress generated in the diamond substrate layer 7 increases as the diamond substrate layer 7 increases in size, the stress of the diamond substrate layer 7 is released to the outside due to the destruction of the columnar diamond 6. Therefore, the occurrence of cracks in the diamond substrate layer 7 is prevented, and the large diamond substrate 1 can be manufactured also in this respect.

  Further, the stress generated by the difference in lattice constant between the base substrate 4 and the diamond substrate layer 7 and / or the stress generated by the difference in thermal expansion coefficient between the base substrate 4 and the diamond substrate layer 7 can be used for separation. After the growth of the substrate layer 7, a separate apparatus, tool or process is not required. Therefore, the manufacturing process of the diamond substrate 1 can be simplified and the separation process can be facilitated.

  The height of the columnar diamond 6 is set to a direction perpendicular to the (001) plane of the diamond single crystal forming the diamond layer 5 and each columnar diamond 6, so that the columnar diamond 6 by stress application is set. This is preferable because the destruction proceeds smoothly.

  The aspect ratio of each columnar diamond 6 in FIGS. 7 to 13 is set to a value that does not completely fill each columnar diamond 6 when the diamond substrate layer 7 is grown.

  Further, the thickness d5 of the diamond layer 5 shown in FIG. 6 is set so as to be equal to the height of the columnar diamond to be formed, and is preferably grown to a thickness of 30 μm or more and 500 μm or less. As shown in FIG. 13, columnar diamond 6 may be formed leaving a diamond layer 5 corresponding to a partial thickness of the bottom of thickness d5.

  Furthermore, the diameter of each columnar diamond 6 is set to about submicron to 5 μm, and the diameter of the central portion of the columnar diamond in the height direction is formed to be smaller than the diameter of the tip portion at both ends. Destruction can proceed more easily and smoothly, which is preferable.

  After separating the diamond substrate layer 7 from the base substrate 4, the diamond substrate layer 7 is polished to remove the remaining columnar diamond 6, and sliced and circled to cut out a disk. Furthermore, the diamond substrate 1 is manufactured from the diamond substrate layer 7 by subjecting the disk to various processes such as lapping, polishing, CMP, and mirror polishing as necessary. Accordingly, the thickness d7 of the diamond substrate layer 7 is set to be slightly thicker than the above-mentioned t in consideration of the polishing allowance and the like.

  By manufacturing the diamond substrate 1 from the diamond substrate layer 7 in this way, a large diamond substrate 1 having a diagonal line of 10 mm or more or a diameter of 0.4 inches or more can be manufactured. Furthermore, since the full width at half maximum of the rocking curve by X-rays on the surface 2 of the diamond substrate 1 can be realized for 300 seconds or less over the entire surface 2, the high-quality diamond substrate 1 can be provided.

  Further, the full width at half maximum can be 100 seconds or less, or more preferably 50 seconds or less, over the entire surface 2. Therefore, it is possible to provide a diamond substrate 1 of higher quality.

As described above, in the method for manufacturing the diamond substrate 1 according to this embodiment, the diamond substrate layer 7 is separated from the base substrate 4 by breaking the columnar diamond 6 during and after the growth of the diamond substrate layer 7. Therefore, even if stress is generated in the diamond substrate layer 7, the stress of the diamond substrate layer 7 is released to the outside due to the destruction of the columnar diamond 6. Accordingly, the occurrence of crystal distortion in the diamond substrate layer 7 is suppressed, and as shown in any of FIGS. 2 to 4, the difference between the highest portion and the lowest portion in the thickness direction of the diamond substrate 1 is more than 0 μm and less than 485 μm. Thus, the variation in dislocation density over the entire surface 2 of the diamond substrate 1 can be made to exceed 0 cm ⁻² and to 10 ⁹ cm ⁻² or less.

  Further, since the stress of the diamond substrate layer 7 is released to the outside due to the destruction of the columnar diamond 6, the occurrence of cracks in the diamond substrate layer 7 and the diamond substrate 1 is prevented.

  As described above, the warpage of the growing diamond single crystal (diamond substrate layer 7) is reduced, and the difference between the highest portion and the lowest portion in the thickness direction of the grown diamond single crystal is suppressed to a range of more than 0 μm and less than 485 μm. As a result, the contact between the cooling table and the base substrate becomes uniform, the temperature distribution in the surface becomes uniform, the temperature unevenness is reduced, and the growth environment can be controlled over the entire surface. Since the warpage of the growing diamond single crystal can be reduced, the warpage of the diamond substrate 1 formed from the diamond single crystal after the growth can also be reduced.

Therefore, in the diamond substrate and the manufacturing method thereof according to the present invention, the difference between the highest portion and the lowest portion in the thickness direction of the diamond substrate 1 can be suppressed to more than 0 μm and less than 485 μm in advance, and the surface of the diamond substrate 1 2 is capable of suppressing the variation in dislocation density over the entire surface of ² above 0 cm ^{−2 and} below 10 ⁹ cm ⁻² . Accordingly, since the film quality of the semiconductor film formed on the entire surface 2 of the diamond substrate 1 can be reduced from the influence of the variation in the dislocation density of the diamond substrate 1, the variation in the dislocation density of the semiconductor film is reduced. It is also possible to suppress the occurrence of in-plane variation in the characteristics of the semiconductor film. At the same time, the temperature in the surface of the diamond substrate 1 can be made more uniform during heating during the formation of a functional thin film (eg, a semiconductor film), thus also suppressing the occurrence of in-plane variations in the characteristics of the semiconductor film. It becomes possible to do.

DESCRIPTION OF SYMBOLS 1 Diamond substrate 2 Diamond substrate surface 4 Underlying substrate 5 Diamond layer 6, 11 Columnar diamond 7 Diamond substrate layer
4a One side of the base substrate C Center axis of the diamond substrate ΔH Amount of warpage of the diamond substrate
t Diamond substrate thickness
d5 Diamond layer thickness
d7 Diamond substrate layer thickness

Claims (14)

The diamond substrate consists of a diamond single crystal,
The difference between the highest part and the lowest part in the thickness direction of the diamond substrate is more than 0 μm and less than 485 μm,
A diamond substrate characterized in that a dislocation density over the entire surface of the diamond substrate is more than 0 cm ^{-2 and not} more than 10 ⁹ cm ^-2 . 2. The diamond substrate according to claim 1, wherein the difference is more than 0 μm and not more than 130 μm, and the dislocation density is more than 0 cm ^{−2 and not} more than 10 ⁷ cm ⁻² . 3. The diamond substrate according to claim 1, wherein the difference is more than 0 μm and not more than 65 μm, and the dislocation density is more than 0 cm ^{−2 and not} more than 10 ⁵ cm ⁻² . The diamond substrate is warped monotonously from the outer edge toward the center,
The diamond substrate according to claim 1, wherein the difference is an amount of warpage between an outer edge and a center. The diamond substrate is warped non-monotonically from the outer edge toward the center,
The diamond substrate according to claim 1, wherein the difference is a warpage amount between an outer edge and the highest portion.   The diamond substrate according to claim 1, wherein the diamond substrate has waviness. The shape in the plane direction of the diamond substrate is a square shape, a circular shape, or a circular shape provided with an orientation flat surface,
The diamond substrate according to any one of claims 1 to 6, wherein in the case of a square shape, the length of a diagonal line is 10 mm or more, and in the case of a circle shape, the diameter is 0.4 inches or more.   The diamond substrate according to claim 7, wherein a length of the diagonal line is 50.8 mm or more, or the diameter is 2 inches or more.   The diamond substrate according to claim 7 or 8, wherein a length of the diagonal line is 50.8 mm or more and 203.2 mm or less, or the diameter is 2 inches or more and 8 inches or less. Prepare the base substrate,
A plurality of columnar diamonds made of diamond single crystal are formed on one side of the base substrate,
A diamond single crystal is grown from the tip of each columnar diamond, each diamond single crystal grown from the tip of each columnar diamond is coalesced to form a diamond substrate layer,
Separate the diamond substrate layer from the underlying substrate,
Manufacturing a diamond substrate from a diamond substrate layer,
The difference between the highest part and the lowest part in the thickness direction of the diamond substrate is set to be more than 0 μm and less than 485 μm,
A method for producing a diamond substrate, characterized in that a dislocation density over the entire surface of the diamond substrate is more than 0 cm ^{-2 and not} more than 10 ⁹ cm ^-2 . 11. The method of manufacturing a diamond substrate according to claim 10, wherein the difference is more than 0 μm and not more than 130 μm, and the dislocation density is more than 0 cm ^{−2 and not} more than 10 ⁷ cm ⁻² . The difference with the following 0μm super 65 .mu.m, a diamond substrate manufacturing method according to claim 10 or 11, characterized in that the dislocation density and 0 cm ^-2 ultra and 10 ⁵ cm ^-2 or less.   The diamond substrate according to any one of claims 10 to 12, wherein the separation of the base substrate and the diamond substrate layer is performed by generating stress in the columnar diamond and destroying the columnar diamond. Production method.   The stress is a stress generated by a difference in lattice constant between the base substrate and the diamond substrate layer and / or a stress generated by a difference in thermal expansion coefficient between the base substrate and the diamond substrate layer. The method for manufacturing a diamond substrate according to claim 13.

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