JP2017107943A - Method and device for cleaning plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for cleaning a plasma processing apparatus in which, without extracting a constituent member to which a by-product is attached from a processing chamber by disassembling a plasma processing device, wearing of an object to be cleaned such as an upper electrode during cleaning can be suppressed, and attachments are capable of being efficiently removed in a short time using plasma.SOLUTION: After a processing chamber 1 for a plasma processing apparatus is tightly sealed, the inside of the processing chamber 1 is decompressed. Next, processing gas W containing water vapor from a spray port 5A of a gas introduction tube 5 provided close to the upper electrode 2 is supplied from the upper electrode 2 side, and the processing gas W containing water vapor is plasmarized by applying high frequency using an RF power supply 4. By using this plasmarized processing gas W, attachments are cleaned which are adhered to the inside of the processing chamber 1, especially to the upper electrode 3.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a cleaning method and a cleaning apparatus for a plasma processing apparatus used for dry etching, and more particularly to a method and a cleaning apparatus for efficiently and effectively cleaning the inside of a chamber of the plasma processing apparatus.

  2. Description of the Related Art Conventionally, in a semiconductor manufacturing process or the like, a plasma processing apparatus has been used when a gas is converted into plasma to act on a substrate to be processed (for example, a semiconductor wafer), and etching processing, sputtering processing, ion implantation processing, or the like is performed on the processing substrate. It is used. Further, in such a plasma processing apparatus, a flat upper electrode and a lower electrode are arranged in a processing chamber so as to face each other in parallel, and high-frequency power is applied between these electrodes to generate plasma. A so-called parallel plate type plasma processing apparatus that supplies an etching gas from a gas supply unit is known, and further, a plasma processing apparatus having such a structure that uses a magnetic field to control the plasma density is known. (For example, refer to Patent Document 1).

In such a plasma processing apparatus, when plasma processing such as plasma etching is repeatedly performed, a by-product due to a reaction with a halogen-based gas (for example, CF ₄ ) used as a component of the gas to be converted into plasma is generated in the processing chamber. Plasma, such as various components (parts) arranged inside, especially the by-product attached to the upper electrode gradually increases, and if it adheres to the gas hole of the gas supply unit, the gas supply amount decreases. Processing may be adversely affected. For this reason, the cleaning which removes the deposit | attachment adhering to the structural member in a processing chamber regularly is performed.

  As a method for cleaning the components of this plasma processing apparatus, a method is known in which a plasma of a cleaning gas such as oxygen, hydrogen, nitrogen, etc. is generated in the processing chamber to etch and remove deposits (Patent Document 2).

  In addition, a cleaning gas plasma is generated in the processing chamber to etch the deposits, and a magnetic field is generated by energizing a plurality of coils, and the thickness of the deposits adhered to the upper electrode depends on the thickness in the radial direction. A method of changing the energization amount for energizing the plurality of coils for each coil has been proposed (Patent Document 3).

JP 2013-149722 A JP 2009-99858 A Japanese Patent Laying-Open No. 2015-170611

  By the way, in recent years, miniaturization and high integration of semiconductor devices such as memories are approaching the limit, and three-dimensional NAND memories and the like that increase the capacity by stacking have become mainstream. In this three-dimensional NAND memory, the capacity can be increased by increasing the number of stacked layers. However, since the processing time of the plasma etching process is increased as the number of stacked layers increases, the amount of deposits in the processing chamber also increases. For this reason, it is necessary to frequently clean the inside of the chamber as described above, and the development of a method for efficiently performing the cleaning in a short time has been demanded.

Here, the deposits on the constituent members in the processing chamber of the plasma processing apparatus are plasmas of a halogen-based gas (for example, CF ₄ ) used as a component of the gas to be converted into plasma and a semiconductor material such as yttria or anodized. The main reaction products (for example, YF ₃ and AlF ₃ ) due to are required to be removed.

  However, the cleaning methods described in Patent Document 2 and Patent Document 3 generate plasma of a cleaning gas in a chamber of a plasma processing apparatus to etch and remove deposits on the constituent members. However, when the by-product attached to the component is thick, it cannot be sufficiently removed. On the other hand, if the by-products attached to the constituent members are sufficiently removed, the cleaning gas removes the by-products (adhered matter) by the etching action caused by plasmatization, so that the upper electrode to be cleaned There is a problem that the material itself of the constituent members is worn out. There is also a problem that the removal work is very time-consuming.

  Therefore, when there are many deposits on the components of the plasma processing apparatus in the processing chamber, particularly the upper electrode, the deposits are once taken out from the processing chamber and removed by chemicals or sandblasting. However, since a substrate to be processed such as a semiconductor wafer is processed by a plasma processing apparatus, if the plasma processing apparatus can be processed in the apparatus without taking out a component to which a by-product is attached by disassembling the plasma processing apparatus, the working efficiency and the plasma processing apparatus It is desirable to shorten the stop time of

The present invention has been made in view of the above problems, and it is possible to reduce the wear of an object such as an upper electrode during cleaning without disassembling the plasma processing apparatus and taking out a component to which a by-product is attached from the processing chamber. Provided are a plasma processing apparatus cleaning method and a cleaning apparatus for performing the cleaning method, which can suppress deposits of fluoride such as YF ₃ due to plasma efficiently and in a short time. For the purpose.

  In view of the above object, first, the present invention provides a processing chamber that accommodates a substrate to be processed, a lower electrode that is disposed in the processing chamber and on which the substrate to be processed is placed, and is opposed to the lower electrode. Cleaning of the plasma processing apparatus for removing components adhering to the processing chamber and / or the inner wall surface of the processing chamber of the plasma processing apparatus having an upper electrode that performs and a pressure reducing mechanism for reducing the pressure in the processing chamber A method comprising: supplying a processing gas containing water vapor into the processing chamber, converting the water vapor into plasma, and using the processing gas containing water vapor into the plasma to form components and / or inside the processing chamber A cleaning method of a plasma processing apparatus characterized by processing a wall surface (Invention 1).

According to this invention (Invention 1), when water (water vapor) is turned into plasma, hydrogen radicals (H.) and hydroxy radicals (OH.) Are generated. In plasma processing, the components on the processing chamber and the deposits on the inner wall surface of the processing chamber are mostly halogen-based gases such as CF ₄ and yttria and alumite (Al Since it is a fluoride such as YF ₃ or AlF ₃ that has reacted with a semiconductor material to be processed such as ₂ O ₃ ), water vapor is supplied into the processing chamber, and this is plasmatized and processed with water vapor plasma. Thus, the generated hydrogen radical (H.) reacts with F in the fluoride such as YF ₃ or AlF ₃ which is an adhering substance to remove it to form HF. Further, the elements on the cation side in the remaining fluoride such as Y and Al are reacted with an oxide such as yttria (Y ₂ O ₃ ) and alumite (Al ₂ O ₃ ) by reaction with the hydroxy radical (OH.). Become. As a result, it is possible to suppress the wear of the components such as the upper electrode in the processing chamber of the plasma processing apparatus, and to clean the components efficiently and in a short time.

  In the said invention (invention 1), it is preferable that the process gas containing the said water vapor is sprayed from the upper electrode of the said plasma processing apparatus, or upper electrode vicinity (invention 2).

  According to this invention (Invention 2), the plasma concentration in the vicinity of the upper electrode can be increased by spraying the processing gas containing water vapor from the upper electrode side to generate plasma, and the amount of deposits tends to increase. The upper electrode can be cleaned particularly efficiently.

  In the said invention (invention 1 and 2), it is preferable that the process gas containing the water vapor contains one or more of rare gases, oxygen, nitrogen and hydrogen (invention 3).

  According to this invention (Invention 3), in addition to the above-described cleaning effect due to the plasmatized water vapor, it is also possible to expect an etching effect due to other gasified gas components. Since this etching effect tends to have a higher priority than fluoride over oxide, it is possible to efficiently clean deposits attached to components such as the upper electrode in the processing chamber of the plasma processing apparatus.

In the said invention (invention 1-3), it is preferable that the high frequency output (RF output) for making the said process gas into plasma is 5-300 W / cm < ² > (invention 4).

  According to this invention (invention 4), by applying high-frequency power to the processing gas with the above-mentioned output, the processing gas can be efficiently converted into plasma, and the component itself to which the deposit to be processed is attached There is little wear and tear.

  In the said invention (invention 1-4), it is preferable to supply the process gas containing the said water vapor so that it may become a pressure of 0.5-20 Pa under pressure reduction conditions (invention 5).

  According to this invention (Invention 5), by supplying the processing gas at the above pressure in a state where the inside of the processing chamber as the processing space is decompressed, the processing gas in the processing chamber can be quickly diffused while being efficiently converted into plasma. In addition, the cleaning can be performed in a short time and the influence on the constituent member itself to be processed is minimal.

  In addition, the present invention secondly, a processing chamber that accommodates a substrate to be processed, a lower electrode that is disposed in the processing chamber and on which the substrate to be processed is placed, and an upper electrode that faces the lower electrode And a depressurizing mechanism for depressurizing the inside of the processing chamber. A cleaning apparatus for a plasma processing apparatus that removes deposits adhering to the constituent members in the processing chamber and / or the inner wall surface of the processing chamber. A cleaning device for a plasma processing apparatus is provided, comprising a spray mechanism for spraying a processing gas containing water vapor in the processing chamber (Invention 6).

According to this invention (invention 6), when water (water vapor) is turned into plasma, hydrogen radicals (H.) and hydroxy radicals (OH.) Are generated. In plasma processing, the components on the processing chamber and the deposits on the inner wall surface of the processing chamber are mostly halogen-based gases such as CF ₄ and yttria and alumite (Al ₂ O ₃ ) is a fluoride such as YF ₃ or AlF ₃ that has reacted with the semiconductor material to be processed, such as ₂ O ₃ ), so that water vapor is supplied into the processing chamber from the spray mechanism while reducing the pressure in the processing chamber. By supplying a high-frequency current to the electrode and the lower electrode, it is possible to treat the deposits attached to the constituent members in the processing chamber and the inner wall surface of the processing chamber with water vapor plasma. As a result, it is possible to suppress the wear of the components such as the upper electrode in the processing chamber of the plasma processing apparatus, and to clean the components efficiently and in a short time.

  In the said invention (invention 6), it is preferable that the said spray mechanism has a spraying port which sprays the said process gas in the upper electrode of the said plasma processing apparatus or the upper electrode vicinity (invention 7).

  According to this invention (invention 7), since the processing gas containing water vapor can be sprayed from the upper electrode side to be converted into plasma, the plasma concentration in the vicinity of the upper electrode can be increased, and the amount of deposits is large. The upper electrode which tends to be formed can be cleaned particularly efficiently.

According to the cleaning method of the plasma processing apparatus of the present invention, the deposits attached to the constituent members in the processing chamber of the plasma processing apparatus and the inner wall surface of the processing chamber, and the processing gas containing water vapor supplied into the processing chamber to the plasma Since the hydrogen radical (H.) generated by converting water vapor into plasma reacts with F in a fluoride such as YF ₃ to form HF, the water radical is removed. . Further, the element on the cation side in the remaining fluoride such as Y becomes an oxide such as yttria (Y ₂ O ₃ ) due to the reaction with the hydroxy radical (OH.), And excessively deposits such as etching. The substrate can be selectively removed without damaging the substrate. As a result, it is possible to efficiently clean the plasma processing apparatus in a short time without taking out the constituent members such as the upper electrode of the plasma processing apparatus to be cleaned from the processing chamber.

It is the schematic which shows typically the cleaning apparatus of the plasma processing apparatus by 1st embodiment of this invention. It is the schematic which shows typically the cleaning apparatus of the plasma processing apparatus by 2nd embodiment of this invention.

  Hereinafter, a cleaning apparatus for a plasma processing apparatus and a cleaning method using the same according to a first embodiment of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 shows a cleaning apparatus according to this embodiment attached to a semiconductor wafer plasma processing apparatus. In FIG. 1, the plasma processing apparatus includes a processing chamber 1 and constituent members provided in the processing chamber 1. A flat upper electrode 2 and a flat lower electrode 3 provided in parallel to the flat upper electrode 2 are provided. An inner wall plate 3 </ b> A is erected on the edge of the lower electrode 3. The upper electrode 2 and the lower electrode 3 are respectively connected to an RF (high frequency) power source 4 for supplying a high frequency current, and the RF (high frequency) power source 4 is a high frequency power for generating plasma at a desired frequency and a desired duty ratio. Can be applied to the upper electrode 2 and the lower electrode 3.

  Further, a plurality of gas introduction pipes 5 (two in the present embodiment) for spraying a processing gas W containing water vapor as a cleaning device are provided in the vicinity of the upper electrode 2 in the upper part of the processing chamber 1. The distal end side of the gas introduction pipe 5 is opened as a spraying port 5A in the processing chamber 1, while the proximal end side communicates with a spraying mechanism (not shown) of the processing gas W containing water vapor. Further, an exhaust port 6 connected to a decompression device (not shown) is formed in the lower portion of the processing chamber 1.

  Here, as the processing gas W containing water vapor, not only the water vapor gas alone but also one or more of rare gases, oxygen, nitrogen and hydrogen are mixed in the water vapor gas to about 10% or less, particularly about 5% or less. A thing may be used. By processing these other gas components into plasma, in addition to the removal effect by the modification of fluoride described later by the water vapor plasma, an etching effect can also be exhibited. In particular, when the blending amount is about 10% or less, the etching effect has a higher priority than the oxide over the fluoride, so that the substrate to be processed is not damaged.

In the plasma processing apparatus as described above, the processing target is the constituent members in the processing chamber 1 such as the upper electrode 2 and the lower electrode 3 and the inner wall surface of the processing chamber 1. These treatment targets are preferably those in which at least a part of the surface layer is an yttria-based material or an alumite-based material. In the present embodiment, in the processing chamber 1 in which the base material yttria or the like is denatured due to the plasma processing using the halogen-based gas such as CF ₄ by the plasma processing apparatus, and the deposit such as YF ₃ is attached. And the inner wall surface of the processing chamber 1 are cleaned. As such a treatment target, the upper electrode 2 is particularly suitable in that a fluoride such as YF ₃ is thick and easily adheres.

  Next, a cleaning method using the cleaning apparatus of the plasma processing apparatus of the present embodiment having the above-described configuration will be described.

First, when the processing chamber 1 of the plasma processing apparatus is sealed, a decompression device (not shown) is started and sucked from the exhaust port 6 to decompress the inside of the processing chamber 1 to preferably 10 ⁻³ Pa or less. Thus, by reducing the pressure in the processing chamber 1 to 10 ⁻³ Pa or less, the inner wall surface of the processing chamber 1 and various components in the processing chamber 1, particularly fine powder and other impurities attached to the upper electrode 2. Can be removed, and treatment with water vapor plasma described later is facilitated, which is preferable.

Next, a spray mechanism (not shown) is activated to supply the processing gas W containing water vapor from the spray electrode 5A of the gas introduction pipe 5 provided in the vicinity of the upper electrode 2 from the upper electrode 2 side and using the RF power source 4. The process gas W containing water vapor is turned into plasma by applying a high frequency. By converting water vapor into plasma in this way, hydrogen radicals (H.) and hydroxy radicals (OH.) Are generated, and the hydrogen radicals are formed on the inner wall surface of the processing chamber 1 and various components in the processing chamber 1, particularly the upper electrode. It reacts with F in a fluoride such as YF ₃ which is a deposit of 2, and is removed by making it HF. Further, the element on the cation side in the remaining fluoride such as Y becomes an oxide such as yttria (Y ₂ O ₃ ) by reaction with the hydroxy radical (OH.). Here, since the fluoride such as YF ₃ is originally a modified yttria of the upper electrode 2 and the lower electrode 3, excessively rubbing the object to be treated, particularly the deposit attached to the upper electrode 2, such as etching. It can be removed selectively without taking. In particular, in the present embodiment, since the processing gas W containing water vapor is sprayed from the upper electrode 2 side to form plasma, the plasma concentration in the vicinity of the upper electrode 2 can be increased, and the amount of deposits tends to increase. There is an effect that the upper electrode 2 can be cleaned particularly efficiently.

  The processing gas W may contain a gas component other than the water vapor gas, and may contain, for example, one or more of rare gases, oxygen, nitrogen and hydrogen. In this case, in addition to the above-described action of plasma conversion of water vapor, an etching effect can be exhibited. In particular, if the blending amount is about 10% or less, the etching effect has a higher priority than the oxide over the fluoride, so that the substrate to be processed such as the upper electrode 2 is not damaged.

  Here, it is preferable to supply the processing gas W containing water vapor so as to have a pressure of 0.5 to 20 Pa. When the pressure supply pressure of the processing gas W is less than 0.5 Pa, it becomes difficult to turn into plasma, but when the pressure exceeds 20 Pa, not only the improvement of the effect is obtained, but also the substrate to be processed such as the upper electrode 2 is easily worn out. Therefore, it is not preferable.

Moreover, it is preferable that the high frequency output for making the processing gas W to which a high frequency is applied using the RF power source 4 into plasma is 5 to 300 W / cm ² . When the high-frequency output is less than 5 W / cm ² , it becomes difficult to generate plasma, and the effect of modifying the deposit as a fluoride such as YF ₃ attached to the processing target such as the upper electrode 2 cannot be sufficiently obtained, while 300 W / cm Even if it exceeds cm ² , not only the improvement of the effect is not obtained, but also the processing object itself such as the upper electrode 2 tends to be damaged, which is not preferable. In addition, in the case of the said output, in a general plasma processing apparatus, the high frequency output as the whole apparatus exists in the range of 2500-10000W.

  The processing time by the plasma processing gas W is not particularly limited, but it is not economical if it is too long, but it may be performed for about 3 to 30 minutes because a sufficient cleaning effect cannot be obtained in a short time.

  By the cleaning method of the plasma processing apparatus of the present embodiment as described above, the upper electrode 2, the lower electrode 3, the inner wall plate 3 A as constituent members provided in the processing chamber 1, and the inner wall surface of the processing chamber 1 were attached. Deposits can be removed. In particular, it is suitable for cleaning the upper electrode 2 in which deposits as fluorides tend to adhere and the deposits tend to be thick.

  Next, a second embodiment of the present invention will be described. In the cleaning apparatus of the plasma processing apparatus of the second embodiment, as shown in FIG. 2, a gas introduction pipe 5 for spraying a processing gas W containing water vapor is provided in the upper electrode 2, and a spray port 5 </ b> A is provided on the lower surface of the upper electrode 2. Except for being formed, it has the same configuration as the first embodiment described above. The gas introduction pipe 5 may be shared with a halogen gas supply pipe for etching or the like.

  By providing the gas introduction pipe 5 on the upper electrode 2 as in the present embodiment, the gas introduction pipe 5 that not only exhibits the same action as the first embodiment described above but also sprays the processing gas W containing water vapor. There is no need to provide a separate pipe, and a halogen gas supply pipe for etching for processing semiconductor substrates, etc. can be shared and switched as necessary. It can be a device of the form.

  As mentioned above, although this embodiment has been described with reference to the accompanying drawings, the present invention is not limited to each of the above-described core embodiments, and various modifications can be made. For example, the gas introducing pipe 5 and the spraying port 5A for spraying the processing gas W containing water vapor are not limited to the upper part of the processing chamber 1, and the processing chamber 1 is used when cleaning is performed mainly on the lower electrode 3 and the inner wall plate 3A. It may be provided on the lower side or may be structured to spray the processing gas W from the lower side toward the upper electrode 2.

The following specific examples further illustrate the present invention.
[Examples 1 to 9]
A 200 μm yttria coating was formed on the surface of the aluminum plate by yttria spraying, and this was used as a substrate. By exposing this yttria film-formed aluminum plate to CF ₄ gas plasma, a simulated deposit was formed on the surface layer of the yttria film, and a simulated upper electrode 2 for testing was formed. The thickness of the deposit on the simulated upper electrode 2 was about 2 μm.

The simulated upper electrode 2 for testing is set in the processing chamber 1 of the cleaning apparatus shown in FIG. 1, the processing chamber 1 is depressurized to 10 ⁻³ Pa or less, and the processing gas W containing water vapor is shown in Table 1. As shown in Table 1, the process gas W was turned into plasma at a high frequency output of 1 to 500 W / cm ² as shown in Table 1, and cleaning treatment was performed for 10 minutes. These processing conditions are shown in Table 1. In addition, the elemental composition ratio of the surface layer of the upper electrode 2 after the treatment was measured by XPS, and the amount of decrease in the film thickness of the yttria coating as the substrate was measured. The results are shown in Table 2. As a reference example, the XPS measurement result of the elemental composition ratio of the surface layer of the upper electrode 2 before forming and cleaning the cleaning simulation deposit is also shown in Table 2.

[Comparative Example 1]
The test upper electrode 2 on which a simulated deposit is formed under the same conditions as those used in Example 1 is set in the processing chamber 1 of the cleaning apparatus shown in FIG. 1, and the processing chamber 1 is set to 10 ⁻³ Pa or less. Then, Ar was supplied at 10 Pa as a processing gas, and the processing gas W was turned into plasma at a high frequency output of 300 W / cm ² to perform a cleaning process for 10 minutes. These processing conditions are shown in Table 1. In addition, the elemental composition ratio of the surface layer of the upper electrode 2 after the treatment was measured by XPS, and the amount of decrease in the film thickness of the yttria coating as the substrate was measured. The results are shown in Table 2.

[Comparative Example 2]
The test upper electrode 2 on which a simulated deposit is formed under the same conditions as those used in Example 1 is set in the processing chamber 1 of the cleaning apparatus shown in FIG. 1, and the processing chamber 1 is set to 10 ⁻³ Pa or less. Then, H ₂ was supplied at 10 Pa as a processing gas, and the processing gas W was turned into plasma at a high frequency output of 300 W / cm ² to perform a cleaning process for 10 minutes. These processing conditions are shown in Table 1. In addition, the elemental composition ratio of the surface layer of the upper electrode 2 after the treatment was measured by XPS, and the amount of decrease in the film thickness of the yttria coating as the substrate was measured. The results are shown in Table 2.

As is apparent from Tables 1 and 2, the change in the composition of the surface layer of the upper electrode 2 for the test showed that fluorine was reduced in comparison with the reference example in the treatment time of 10 minutes according to the cleaning methods of Examples 1-9. It can be seen that the deposits can be selectively cleaned. This is because fluoride such as YF ₃ reacts with hydrogen radicals (H.) caused by water vapor plasma and is removed as HF, while yttrium on the cation side reacts with hydroxy radicals (OH.) To react with yttria. It is thought that it is to become.

In particular, when the pressure of the processing gas W containing water vapor is 3 Pa, the cleaning effect is great by setting the output of the high-frequency power source to 5 W / cm ² or more, but in Example 9 where the output of the high-frequency power source exceeds 300 W / cm ² , the yttria coating The decrease in was great. Further, in Example 8 in which the output of the high-frequency power source was 300 W / cm ² and the pressure of the processing gas W containing water vapor exceeded 20 Pa, wear of the yttria coating was slightly observed.

  On the other hand, in Comparative Example 1 in which Ar was converted into a plasma as a processing gas and the upper electrode 2 for testing was processed in the processing chamber 1 in the same manner, wear of the yttria coating was observed, and hydrogen was converted into a plasma as a processing gas. Similarly, in Comparative Example 1 in which the test upper electrode 2 was processed in the processing chamber 1, the elemental composition ratio was close to that of the reference example before cleaning. It turns out that it is not removal.

DESCRIPTION OF SYMBOLS 1 ... Processing chamber 2 ... Upper electrode 3 ... Lower electrode 4 ... RF (high frequency) power supply 5 ... Gas introduction pipe 5A ... Spraying port 6 ... Exhaust port W ... Processing gas containing water vapor | steam

Claims (7)

A processing chamber that accommodates a substrate to be processed, a lower electrode that is disposed in the processing chamber and on which the substrate to be processed is placed, an upper electrode that faces the lower electrode, and a vacuum that depressurizes the processing chamber A plasma processing apparatus cleaning method for removing deposits adhering to a component in the processing chamber and / or an inner wall surface of the processing chamber of the plasma processing apparatus having a mechanism,
Supplying a processing gas containing water vapor into the processing chamber;
Plasmaizing the water vapor,
A method for cleaning a plasma processing apparatus, comprising: processing a constituent member in the processing chamber and / or an inner wall surface of the processing chamber with a processing gas containing plasma-converted water vapor.   The method for cleaning a plasma processing apparatus according to claim 1, wherein the processing gas containing water vapor is sprayed from an upper electrode of the plasma processing apparatus or from the vicinity of the upper electrode.   The method for cleaning a plasma processing apparatus according to claim 1, wherein the processing gas containing water vapor contains one or more of a rare gas, oxygen, nitrogen, and hydrogen. The method for cleaning a plasma processing apparatus according to claim 1, wherein a high frequency output (RF output) for converting the processing gas into plasma is 5 to 300 W / cm ² .   The method for cleaning a plasma processing apparatus according to claim 1, wherein the processing gas containing water vapor is supplied at a pressure of 0.5 to 20 Pa under reduced pressure. A processing chamber that accommodates a substrate to be processed, a lower electrode that is disposed in the processing chamber and on which the substrate to be processed is placed, an upper electrode that faces the lower electrode, and a vacuum that depressurizes the processing chamber A plasma processing apparatus cleaning device for removing deposits adhering to a component in the processing chamber and / or an inner wall surface of the processing chamber of the plasma processing apparatus having a mechanism,
A cleaning apparatus for a plasma processing apparatus, comprising a spray mechanism for spraying a processing gas containing water vapor into the processing chamber.   The cleaning apparatus for a plasma processing apparatus according to claim 6, wherein the spray mechanism has a spray port for spraying the processing gas on an upper electrode of the plasma processing apparatus or in the vicinity of the upper electrode.

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