JP2017073515A - Connection element and mounting structure of semiconductor element for mounting substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a connection element including a thin-film element functioning as a passive element and a conductive bonding material and capable of increasing the connection reliability between a semiconductor element and a mounting substrate by suppressing disconnection of the conductive bonding material at reflow, and also to provide a mounting structure of the semiconductor element for the mounting substrate having connection reliability between the semiconductor element and the mounting substrate improved using the connection element.SOLUTION: A connection element 101 comprises a thin-film element 11 including a first principal surface S1 and a second principal surface S2, a first electrode P1 formed on the first principals surface S1, a second electrode P2 formed on the second principal surface S2, a first conductive bonding material 21 provided on a surface of the first electrode P1, and a second conductive bonding material 22 provided on a surface of the second electrode P2. When viewed from a direction (Y direction) along the first principal surface S1, the first conductive bonding material 21 is semicircularly provided on the surface of the first electrode P1. When viewed from the direction (Y direction) along the second principal surface S2, the second conductive bonding material 22 is semicircularly provided on the surface of the second electrode S2.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a connection element, and particularly to a connection element including, for example, a thin film element and a conductive bonding material. The present invention also relates to a mounting structure of a semiconductor element on a mounting board, and more particularly to a mounting structure of a semiconductor element on the mounting board using, for example, the connection element.

  Conventionally, various methods for increasing the density and integration of discrete components and semiconductor elements (semiconductor packages) mounted on a mounting substrate have been devised in order to meet the demand for downsizing electronic devices.

  For example, Patent Document 1 describes a method in which an element such as a resistor or a capacitor formed in a spherical shape or the like is connected as a connection element like a solder ball by being sandwiched between a semiconductor element and a mounting substrate. With the above structure, the number of elements such as resistors and capacitors mounted on the mounting substrate can be reduced, so that high density and high integration can be achieved. Further, compared with the case where elements such as a resistor and a capacitor are mounted on the mounting substrate, the number of connection points by the conductive bonding material can be reduced, so that the connection reliability is improved.

JP 2003-124593 A

  If only a conductive bonding material such as a solder ball is sandwiched between the semiconductor element and the mounting board, the conductive bonding material melts during reflow, so the distance between the mounting board and the semiconductor element is the same as before reflowing. Smaller than

  However, since the connection element disclosed in Patent Document 1 hardly deforms after reflow, the distance between the mounting substrate and the semiconductor element is determined by the method of connecting the connection element between the semiconductor element and the mounting substrate. Hardly changes after reflow. Therefore, when a conductive bonding material such as solder balls is mixed in the connection element that is sandwiched and connected between the semiconductor element and the mounting substrate, the conductive bonding material melts during reflow and becomes conductive. There is a possibility that the cross-section of the bonding material becomes thin due to surface tension and breaks.

  An object of the present invention is to provide a thin film element functioning as a passive element and a conductive bonding material, and to suppress the disconnection of the conductive bonding material during reflow, thereby improving the connection reliability between the semiconductor element and the mounting substrate. It is to provide an enhanced connection element. In addition, by using a connection element including a thin film element functioning as a passive element and a conductive bonding material, a connection structure between the semiconductor element and the mounting substrate is improved, and a mounting structure of the semiconductor element on the mounting substrate is provided. It is to provide.

(1) The connecting element of the present invention is
A thin film element having a first main surface and a second main surface opposite to the first main surface;
A first electrode formed on the first main surface;
A second electrode formed on the second main surface;
A first conductive bonding material provided in a semicircular shape on the surface of the first electrode, as viewed from the direction along the first main surface;
A second conductive bonding material provided in a semicircular shape on the surface of the second electrode as viewed from the direction along the second main surface;
It is characterized by providing.

  In this configuration, the first conductive bonding material and the second conductive bonding material are melted by a reflow process in the same manner as a spherical conductive bonding material such as a solder ball. Therefore, the distance after reflow between the terminal electrodes connected via the connecting element (for example, between the mounting electrode of the mounting substrate and the external electrode of the semiconductor element) depends on the surface tension of the conductive bonding material, etc. This is shorter than the distance before reflow between the terminal electrodes to be connected. Therefore, when the connection electrodes and the spherical conductive bonding material are used to connect the terminal electrodes, the spherical conductive bonding material melted by the reflow process is suppressed from being thinned by the surface tension, and the molten spherical ball Disconnection of the conductive bonding material can be suppressed.

  Further, the external shape (shape and size) of the connection element is substantially the same as the spherical conductive bonding material. Therefore, the connection element can be connected by being sandwiched between the semiconductor element and the mounting substrate, similarly to the spherical conductive bonding material. Therefore, the number of passive elements mounted on the mounting substrate can be reduced, and high density and high integration can be achieved. Moreover, since the connection location by a conductive joining material can be reduced compared with the case where a passive element is mounted in a mounting substrate, connection reliability improves.

(2) In the above (1), the first electrode and the first conductive bonding material are formed inside an outer edge of the first main surface when viewed from a direction perpendicular to the first main surface, The second electrode and the second conductive bonding material are preferably formed inside the outer edge of the second main surface as viewed from a direction perpendicular to the second main surface. With this configuration, it is possible to prevent the first conductive bonding material and the second conductive bonding material melted by the reflow process from being wet and spread on the first main surface side and the second main surface side. The possibility that the two electrodes P2 are short-circuited is low.

(3) In the above (1) or (2), the thin film element is formed on a substrate having a first surface and a second surface and at least one of the first surface and the second surface by a thin film process. And a passive element. With this configuration, since the thickness of the thin film element can be reduced, the distance between the terminal electrodes connected through the connection element can be further shortened. Therefore, the parasitic inductance of the conductive bonding material and the thin film element can be further suppressed.

(4) In the above (3), the passive element may be a capacitor.

(5) In the above (3), the passive element is preferably a coiled inductor having a winding axis, and the winding axis is preferably parallel to the first main surface and the second main surface. . With this configuration, the magnetic flux generated in the coiled inductor can be prevented from being blocked by the first electrode and the second electrode. Therefore, a coiled inductor having a predetermined inductance value can be realized.

(6) In any one of (1) to (5), the first conductive bonding material and the second conductive bonding material may be made of solder.

(7) The mounting structure of the semiconductor element on the mounting substrate of the present invention is as follows:
A semiconductor element having a plurality of external electrodes;
A mounting substrate having a plurality of mounting electrodes;
A mounting structure of the semiconductor element with respect to the mounting substrate,
A thin film element having a first main surface and a second main surface opposite to the first main surface;
A first electrode formed on the first main surface;
A second electrode formed on the second main surface;
A first conductive joint provided on a surface of the first electrode;
A second conductive joint provided on the surface of the second electrode;
A third conductive joint;
Further comprising
Some external electrodes among the plurality of external electrodes are connected to the first electrode through the first conductive joint,
A part of the plurality of mounting electrodes is connected to the second electrode through the second conductive joint,
The other mounting electrode among the plurality of mounting electrodes is connected to the other external electrode among the plurality of external electrodes through the third conductive joint portion.

  In this configuration, the first conductive bonding material and the second conductive bonding material are melted by the reflow process in the same manner as the spherical conductive bonding material. Therefore, the distance between the external electrode of the semiconductor element after reflow and the mounting electrode of the mounting board depends on the weight of the semiconductor element, the surface tension of the conductive bonding material, etc. The distance is shorter than the distance between the mounting electrodes. Therefore, when a semiconductor element is mounted on a mounting substrate using these connection elements and a spherical conductive bonding material, the spherical conductive bonding material melted by the reflow process is suppressed from being thinned by surface tension, The disconnection of the spherical conductive bonding material can be suppressed.

  According to the present invention, the connection reliability between the semiconductor element and the mounting substrate is provided by including the thin film element functioning as a passive element and the conductive bonding material, and suppressing disconnection of the conductive bonding material during reflow. An improved connection element can be realized. In addition, by using a connection element including a thin film element functioning as a passive element and a conductive bonding material, a connection structure between the semiconductor element and the mounting substrate is improved, and a mounting structure of the semiconductor element on the mounting substrate is provided. realizable.

FIG. 1 is a front view of a connection element 101 according to the first embodiment. FIG. 2 is an external perspective view showing the thin film element 11, the first electrode P1, and the second electrode P2 included in the connection element 101. FIG. FIG. 3 is a cross-sectional view of the thin film element 11, the first electrode P1, and the second electrode P2. FIG. 4A is a front view showing a state in which the semiconductor element 1 is surface-mounted on the mounting substrate 2 using the connection element 101 and the third conductive bonding material 23, and FIG. It is a front view which shows the state after reflow of the semiconductor element 1 which mounted | wore to the mounting board | substrate 2. FIG. FIG. 5A is a front view illustrating a main part of the electronic device 201 using the connection element 101, and FIG. 5B is a block diagram of the main part of the electronic device 201. 6A is a plan view of the thin film element 13, and FIG. 6B is a cross-sectional view taken along line AA in FIG. 6A. 7A is a plan view of the thin film element 14, and FIG. 7B is a cross-sectional view taken along line BB in FIG. 7A.

  Hereinafter, several specific examples will be given with reference to the drawings to show a plurality of modes for carrying out the present invention. In each figure, the same reference numerals are assigned to the same portions. In consideration of ease of explanation or understanding of the main points, the embodiments are shown separately for convenience, but the components shown in different embodiments can be partially replaced or combined. In the second and subsequent embodiments, description of matters common to the first embodiment is omitted, and only different points will be described. In particular, the same operation effect by the same configuration will not be sequentially described for each embodiment.

<< First Embodiment >>
FIG. 1 is a front view of a connection element 101 according to the first embodiment. FIG. 2 is an external perspective view showing the thin film element 11, the first electrode P1, and the second electrode P2 included in the connection element 101. FIG. In FIG. 1, the thickness of each part is exaggerated. The same applies to front views and cross-sectional views in the following embodiments.

  The connection element 101 includes a thin film element 11, a first electrode P 1, a second electrode P 2, a first conductive bonding material 21 and a second conductive bonding material 22. As shown in FIG. 1 and the like, the connection element 101 is a substantially spherical passive element like a solder ball.

  The thin film element 11 is an insulating thin plate having a square planar shape, and has a first main surface S1 and a second main surface S2 facing the first main surface S1. As shown in FIG. 1 and the like, the first main surface S1 and the second main surface S2 of the thin film element 11 are parallel to the XY plane. Note that the X direction, the Y direction, and the Z direction shown in FIG. 1 and the like are directions orthogonal to each other. The first main surface S1 and the second main surface S2 are parallel to the X direction and the Y direction, and are perpendicular to the Z direction.

  The first electrode P1 is an electrode pattern having a square planar shape formed on the first main surface S1. The first conductive bonding material 21 is provided in a semicircular shape on the surface of the first electrode P1 when viewed from the direction along the first main surface S1 (Y direction).

  The first electrode P1 has an area smaller than that of the first main surface S1 and is formed at substantially the center of the first main surface S1. Therefore, the first electrode P1 and the first conductive bonding material 21 are formed inside the outer edge of the first main surface S1 when viewed from the direction perpendicular to the first main surface S1 (Z direction). In other words, the first conductive bonding material 21 does not reach the outer edge of the first main surface S1 when viewed from the Z direction.

  The second electrode P2 is an electrode pattern having a square planar shape formed on the second main surface S2. The second conductive bonding material 22 is provided in a semicircular shape on the surface of the second electrode P2 electrode P2 when viewed from the direction (Y direction) along the second main surface S2.

  The second electrode P2 has a smaller area than the second main surface S2, and is formed at substantially the center of the second main surface S2. Therefore, the second electrode P2 and the second conductive bonding material 22 are formed inside the outer edge of the second main surface S2 when viewed from the direction perpendicular to the second main surface (Z direction). In other words, the second conductive bonding material 22 does not reach the outer edge of the second main surface S2 when viewed from the Z direction.

  For example, the first electrode P1 and the second electrode P2 are obtained by coating a plating film mainly composed of Cu or Ag with a plating film such as Ni or Au, and the first conductive bonding material 21 and the second conductive bonding material. 22 is, for example, solder.

  FIG. 3 is a cross-sectional view of the thin film element 11, the first electrode P1, and the second electrode P2.

  The thin film element 11 includes a substrate 31, a passive element 41, a diffusion prevention layer 52, an insulator layer 53, a protective layer 54, a plurality of conductors 63 and 64, and a plurality of interlayer connection conductors V1, V2, V3, and V4.

The substrate 31 is a conductive thin plate having a square planar shape, and has a first surface PS1 and a second surface PS2. The substrate 31 is, for example, a low resistance Si substrate. A diffusion prevention layer 52 is formed on the first surface PS <b> 1 of the substrate 31, and a passive element 41 is formed on the surface of the diffusion prevention layer 52. The diffusion preventing layer 52 has an insulating property and prevents the element contained in the substrate 31 from diffusing into the passive element 41. The diffusion prevention layer 52 is, for example, a SiO ₂ film.

The passive element 41 is a passive element formed on the first surface PS1 of the substrate 31 by a thin film process. More specifically, the passive element 41 includes a first capacitor electrode 61 formed on the diffusion prevention layer 52, a dielectric layer 51 formed on the first capacitor electrode 61, and the dielectric layer 51. And a second capacitor electrode 62 formed on the thin film capacitor. The first capacitor electrode 61 and the second capacitor electrode 62 are, for example, Cu foils, but a material having oxidation resistance against heat treatment such as Pt, Au, Ru, etc. is preferable. The dielectric layer 51 is a high dielectric constant material, for example, (Ba, Sr) TiO ₃ (BST).

  In addition, an insulator layer 53 is formed on the surface of the diffusion preventing layer 52. As shown in FIG. 3, the passive element 41 is entirely covered with an insulating layer 53. Conductors 63 and 64 are formed on the upper surface of the insulating layer 53. The conductor 63 is electrically connected to the substrate 31 via an interlayer connection conductor V1 that penetrates the diffusion prevention layer 52 and the insulator layer 53. The conductor 63 is connected to the first capacitor electrode 61 of the passive element 41 through the interlayer connection conductor V2 that penetrates the insulator layer 53. The conductor 64 is connected to the second capacitor electrode 62 of the passive element 41 through the interlayer connection conductor V3.

  Further, a protective layer 54 is formed on the surface of the diffusion prevention layer 52 and the upper surface of the insulator layer 53. The insulator layer 53 is entirely covered with a protective layer 54 as shown in FIG. The protective layer 54 is, for example, a polyimide resin or an epoxy resin.

  A first electrode P1 is formed on the upper surface of the protective layer 54 (the first main surface S1 of the thin film element 11). The first electrode is connected to the conductor 64 via an interlayer connection conductor V4 that penetrates the protective layer 54. A second electrode P2 is formed on the second surface PS2 of the substrate 31 (second main surface S2 of the thin film element 11).

  Thus, the thin film element 11 functions as a capacitor.

  The connection element 101 according to the present embodiment is manufactured by, for example, the following processes (1) to (7).

(1) First, a thin film element 11 formed by a thin film process is prepared.

(2) Next, a conductor film such as a Cu film is formed on the first main surface S1 and the second main surface S2 of the thin film element 11 by plating or the like, and this is patterned by forming a photoresist film pattern and etching. Thus, the first electrode P1 and the second electrode P2 are formed. Alternatively, the first electrode P1 and the second electrode P2 may be formed by screen printing a conductive paste. Thereafter, Ni and Au plating films are further formed on the surface of the plating film such as Cu.

(3) A paste-like conductive bonding material is printed on the first electrode P1. That is, when solder is used, a solder paste is printed on the first electrode P1 formed on the first main surface S1 of the thin film element 11. Thereafter, the first conductive bonding material 21 is provided on the surface of the first electrode P1 by a reflow process. By the reflow process, the paste-like conductive bonding material becomes the first conductive bonding material 21 provided in a semicircular shape on the surface of the first electrode P1 when viewed from the X direction or the Y direction.

(4) Next, a masking tape (seal tape) having heat resistance is attached to the entire first main surface S1 of the thin film element 11.

(5) A paste-like conductive bonding material is printed on the second electrode P2. That is, when using solder, the solder paste is printed on the second electrode P2 formed on the second main surface S2 of the thin film element 11. Thereafter, the second conductive bonding material 22 is provided on the surface of the second electrode P2 by a reflow process. By the reflow process, the paste-like conductive bonding material becomes the second conductive bonding material 22 provided in a semicircular shape on the surface of the second electrode P2 when viewed from the X direction or the Y direction.

(6) Thereafter, the masking tape attached to the entire first main surface S1 of the thin film element 11 is removed.

(7) In addition, said process is processed with the wafer state in which the some thin film element 11 was formed. Finally, dicing is performed to separate each connection element 101 unit (piece) from the wafer.

  Next, a mounting method of the semiconductor element 1 and advantages of using the connection element 101 will be described with reference to the drawings. FIG. 4A is a front view showing a state in which the semiconductor element 1 is surface-mounted on the mounting substrate 2 using the connection element 101 and the third conductive bonding material 23, and FIG. It is a front view which shows the state after reflow of the semiconductor element 1 which mounted | wore to the mounting board | substrate 2. FIG.

  A plurality of external electrodes 71 and 72 are formed on the lower surface (mounting surface) of the semiconductor element 1, and a plurality of mounting electrodes 81 and 82 are formed on the upper surface of the mounting substrate 2. The semiconductor element 1 is, for example, a semiconductor IC chip.

  As shown in FIG. 5A, the connection element 101 is disposed between the external electrode 71 and the mounting electrode 81. At this time, the first conductive bonding material of the connection element 101 is in contact with the external electrode 71, and the second conductive bonding material of the connection element 101 is in contact with the mounting electrode 81. Further, the spherical third conductive bonding material 23 is disposed between the external electrode 72 and the mounting electrode 82. The third conductive bonding material 23 is, for example, a solder ball.

  Thereafter, as shown in FIG. 5B, the semiconductor element 1 is mounted on the mounting substrate 2 by a reflow process.

  More specifically, the first conductive bonding material of the connection element 101 is melted by the reflow process to form the first conductive bonding portion 21S. The first conductive joint portion 21 </ b> S is electrically connected between the first electrode of the thin film element 11 and the external electrode 71 and is structurally joined. By the reflow process, the second conductive bonding material of the connection element 101 is melted to form the second conductive bonding portion 22S. The second conductive joint portion 22 </ b> S electrically conducts and structurally joins between the second electrode P <b> 2 of the thin film element 11 and the mounting electrode 81. That is, the external electrode 71 is connected to the mounting electrode 81 through the thin film element 11, the first conductive joint portion 21S, and the second conductive joint portion 22S. Further, the third conductive bonding material 23 is melted by the reflow process to become the third conductive bonding portion 23S. The third conductive joint 23S is electrically connected between the external electrode 72 and the mounting electrode 82 and structurally joins.

  The semiconductor element 1 is surface-mounted on the mounting substrate 2 using the connection element 101 as shown in FIG. 4A, for example, by the following steps (1) and (2).

(1) First, an adhesive such as flux is applied to the mounting electrodes 81 and 82 formed on the upper surface of the mounting substrate 2, and the connection element 101 and the third conductive bonding material 23 are placed on the mounting electrodes 81 and 82, respectively. Place (adhere). The connection element 101 and the third conductive bonding material 23 are disposed on the mounting electrodes 81 and 82 by a mounter, for example.

(2) Next, an adhesive such as flux is applied to the external electrodes 71 and 72 formed on the mounting surface of the semiconductor element 1, and the connection element 101 and the third conductivity disposed on the mounting electrodes 81 and 82. The bonding material 23 is disposed on the external electrodes 71 and 72, respectively.

  In this manner, the semiconductor element 1 is surface-mounted on the mounting substrate 2 using the connection element 101 and the third conductive bonding material 23.

  In addition, after disposing the connection element 101 and the third conductive bonding material 23 on the external electrodes 71 and 72 formed on the mounting surface of the semiconductor element 1 respectively, the mounting electrodes 81 and 82 formed on the upper surface of the mounting substrate 2. In addition, the connection element 101 and the third conductive bonding material 23 arranged on the external electrodes 71 and 72 may be arranged, respectively. Further, the connection element 101 and the third conductive bonding material 23 may be arranged separately by a mounter, or may be arranged at the same time.

  Further, the semiconductor element 1 may be surface-mounted on the mounting substrate 2 using the connection element 101 by, for example, the following steps (1) and (2).

(1) First, the thin film element 11 in which the second conductive bonding material 22 is provided on the second electrode P2 is prepared.

(2) Next, an adhesive is applied to the mounting electrodes 81 and 82 formed on the upper surface of the mounting substrate 2, and the second conductive bonding material 22 and the third conductive bonding material 23 of the thin film element 11 are mounted on the mounting electrodes. 81 (82) (adhered).

(3) Next, an adhesive is applied on the first electrode P1 of the thin film element 11, and a spherical conductive bonding material such as a solder ball is disposed on the first electrode P1.

(4) Next, an adhesive is applied on the external electrodes 71 and 72 formed on the mounting surface of the semiconductor element 1, and the third conductive bonding material 23 and the first electrode P 1 disposed on the mounting electrode 82 are applied. Are disposed on the external electrodes 71 and 72, respectively.

  In addition, the thin film element 11 provided with the first conductive bonding material 21 on the first electrode P1 is prepared, and the thin film element 11 and the third conductivity are formed on the external electrodes 71 and 72 formed on the mounting surface of the semiconductor element 1. After each of the bonding materials 23 is disposed and a spherical conductive bonding material is disposed on the second electrode P2 of the thin film element 11, the spherical conductive bonding material disposed on the second electrode P2 is mounted on the mounting electrodes 81 and 82. The third conductive bonding material 23 may be bonded.

  If the connection element 101 according to this embodiment is used in the mounting structure of the semiconductor element 1, the following effects can be obtained.

(A) In the connection element 101 according to the present embodiment, the first conductive bonding material 21 and the second conductive bonding material 22 are melted by a reflow process in the same manner as the third conductive bonding material 23. Therefore, the distance H2 between the semiconductor element 1 after reflow and the mounting substrate 2 is determined between the semiconductor element 1 before reflow and the mounting substrate 2 due to the weight of the semiconductor element 1 and the surface tension of the conductive bonding material. Shorter than the distance H1 (H1> H2). Therefore, when the semiconductor element 1 is mounted on the mounting board 2 using the connection element 101 and the third conductive bonding material 23, the third conductive bonding material 23 (third conductive bonding portion 23S melted by the reflow process). ) Is suppressed by surface tension, and disconnection of the third conductive joint portion 23S can be suppressed.

(B) Moreover, the thin film element 11 according to the present embodiment includes a substrate 31 having the first surface PS1 and the second surface PS2, and a passive element (thin film capacitor) formed on the first surface PS1 by a thin film process. With this configuration, since the thickness of the thin film element 11 can be reduced, the distance H2 between the semiconductor element 1 and the mounting substrate 2 can be further shortened. Therefore, it is possible to further suppress the parasitic inductance of the first conductive joint portion 21S, the second conductive joint portion 22S, and the thin film element 11.

(C) The external shape (shape and size) of the connection element 101 is substantially the same as a spherical conductive bonding material such as a solder ball. Therefore, the connection element 101 can be connected by being sandwiched between the semiconductor element and the mounting substrate, similarly to the spherical conductive bonding material. Therefore, the number of passive elements mounted on the mounting substrate can be reduced, and high density and high integration can be achieved. Moreover, since the connection location by a conductive joining material can be reduced compared with the case where a passive element is mounted in a mounting substrate, connection reliability improves.

(D) In the present embodiment, the first electrode P1 and the first conductive bonding material 21 are formed inside the outer edge of the first main surface S1 when viewed from the Z direction. In other words, the first conductive bonding material 21 does not reach the outer edge of the first main surface S1 when viewed from the Z direction. With this configuration, it is possible to prevent the first conductive bonding material 21 (first conductive bonding portion 21S) melted by the reflow process from being wet and spread toward the second main surface S2, and thus the first electrode P1 and the second electrode The possibility of short circuiting with P2 is low.

(E) Similarly, in the present embodiment, the second electrode P2 and the second conductive bonding material 22 are formed inside the outer edge of the second main surface S2 when viewed from the Z direction. With this configuration, the second conductive bonding material 22 (second conductive bonding portion 22S) melted by the reflow process can be prevented from spreading to the first main surface S1 side. Therefore, the first electrode P1 and the second electrode The possibility of short circuiting with P2 is low.

(F) The connection element 101 includes a first conductive bonding material 21 provided on the surface of the first electrode P1 and a second conductive bonding material 22 provided on the surface of the second electrode P2. Therefore, the displacement of the connection element 101 (thin film element 11) is less likely to occur due to the self-alignment action in the reflow process. Therefore, by using the connection element 101 according to this embodiment, the thin film element 11 is connected between the external electrode 71 and the mounting electrode 81 with high accuracy.

(G) Since the connecting element 101 includes the first conductive bonding material 21 and the second conductive bonding material 22, the first conductive bonding portion 21S and the second conductive bonding portion 22S melted by the reflow process are used. Surface tension is generated on the surface. Therefore, when the connection element 101 is disposed between the external electrode 71 and the mounting electrode 81, the first main surface and the second main surface of the thin film element are not parallel to the external electrode 71 and the mounting electrode 81. However, the position is corrected so as to be parallel to the external electrode 71 and the mounting electrode 81 after the reflow.

(H) In the present embodiment, the passive element 41 includes a first capacitor electrode 61, a dielectric layer 51 formed on the first capacitor electrode 61, and a second capacitor formed on the dielectric layer 51. This is a thin film capacitor composed of the electrode 62 for use. Therefore, the distance between the first capacitor electrode 61 and the second capacitor electrode 62 can be easily shortened, and the connection element 101 functioning as a high-capacitance capacitor can be realized.

(I) Moreover, in this embodiment, since the whole passive element 41 is coat | covered with the insulator layer 53, the characteristic change by the etching etc. for forming the conductors 63 and 64 can be suppressed. Also, with this configuration, the thin film element 11 having high robustness and high heat resistance can be realized.

  In the present embodiment, as shown in FIG. 3, since the first capacitor electrode 61 and the substrate 31 are connected via the conductor 63 and the interlayer connection conductors V1 and V2, the line length becomes long. However, the connection element 101 having a low ESR can be obtained by increasing the thickness of the conductor 63 and increasing the diameters of the interlayer connection conductors V1 and V2.

<< Second Embodiment >>
In the second embodiment, an electronic device 201 using the connection element 101 and the third conductive bonding material according to the first embodiment will be described with reference to the drawings.

  FIG. 5A is a front view illustrating a main part of the electronic device 201 using the connection element 101, and FIG. 5B is a block diagram of the main part of the electronic device 201. In FIG. 5B, the thin film element 11 which is a thin film capacitor is represented by a capacitor C.

  The electronic device 201 includes a semiconductor element 1 and a mounting substrate 2. External electrodes 71 and 72 are formed on the lower surface (mounting surface) of the semiconductor element 1, and mounting electrodes 81 and 82 are formed on the upper surface of the mounting substrate 2.

  The external electrode 71 is connected to the first electrode P1 formed on the first main surface of the thin film element 11 via the first conductive joint portion 21S. The mounting electrode 81 is connected to the second electrode P2 formed on the second main surface of the thin film element 11 through the second conductive joint portion 22S. That is, the external electrode 71 is connected to the mounting electrode 81 through the first conductive joint portion 21S, the thin film element 11, and the second conductive joint portion 22S. As described above, the first conductive bonding portion 21S and the second conductive bonding portion 22S are the first conductive bonding material and the second conductive material of the connection element 101 disposed between the external electrode 71 and the mounting electrode 81. Each of the conductive bonding materials is melted.

  The external electrode 72 is connected to the mounting electrode 82 via the third conductive joint portion 23S. As described above, the third conductive bonding portion 23S is obtained by melting the third conductive bonding material disposed between the external electrode 72 and the mounting electrode 82.

  In the main part of the electronic device 201, the mounting electrode 82 of the mounting substrate 2 is connected to the power supply circuit 92, and the mounting electrode 81 is connected to the ground. Therefore, as shown in FIG. 5B, the circuit 91 included in the semiconductor element 1 is electrically connected to the power feeding circuit 92, and the capacitor C shunt-connected to the ground is configured. Thus, in the main part of the electronic device 201, the thin film element 11 (capacitor C) functions as a decoupling capacitor.

  In the electronic device 201, since the capacitor C is shunted immediately before the circuit 91, high frequency noise or harmonic noise superimposed on the power supply line from the power supply circuit 92 can be removed.

  In the electronic apparatus 201 according to the present embodiment, the circuit configuration as shown in FIG. 5B is shown, but the present invention is not limited to this. In the mounting structure of the semiconductor element 1 using the connection element 101, the circuit configuration can be changed as appropriate.

<< Third Embodiment >>
In the third embodiment, a connection element thin film element 13 functioning as an inductor will be described with reference to the drawings.

  6A is a plan view of the thin film element 13, and FIG. 6B is a cross-sectional view taken along line AA in FIG. 6A.

  The thin film element 13 according to the present embodiment is different from the thin film element 11 of the connection element 101 according to the first embodiment in that a coil conductor 65 is provided. The thin film element 13 is different from the thin film element 11 in the material of the substrate 32. Other configurations are the same as those of the connection element 101.

  The thin film element 13 includes a substrate 32, a coil conductor 65, an insulator layer 53, and a plurality of interlayer connection conductors V1 and V2.

  The substrate 32 is an insulating thin plate having a square planar shape and has a first surface PS1 and a second surface PS2. The substrate 32 is, for example, a high resistance Si substrate. A coil conductor 65 is formed on the first surface PS1 of the substrate 32. The coil conductor 65 is a spiral conductor pattern of about 2 turns, and is a passive element (thin film inductor) formed by a thin film process. The coil conductor 65 is, for example, a Cu foil, but a material having oxidation resistance against heat treatment such as Pt, Au, Ru, etc. is preferable.

  An insulating layer 53 is formed on the first surface PS1 of the substrate 32. As shown in FIG. 5, the coil conductor 65 is entirely covered with an insulating layer 53. A first electrode P1 is formed on the upper surface of the insulator layer 53, and a second electrode P2 is formed on the second surface S2 of the substrate 32. The first electrode P1 is connected to one end of the coil conductor 65 via an interlayer connection conductor V2 penetrating the insulator layer 53, and the second electrode P2 is connected to the coil via an interlayer connection conductor V1 penetrating the substrate 32. The other end of the conductor 65 is connected. The insulator layer 53 is made of, for example, polyimide resin or epoxy resin. Insulator layer 53 is preferably magnetic ferrite, for example, in order to obtain a predetermined large inductance value.

  With this configuration, the thin film element 13 functions as an inductor.

  Even a connection element including the thin film element 13 according to the present embodiment has the same effects as those of the connection element 101 according to the first embodiment described above.

<< Fourth Embodiment >>
In the fourth embodiment, an example different from the thin film element 13 shown in the third embodiment in a thin film element of a connection element functioning as an inductor will be described with reference to each drawing.

  7A is a plan view of the thin film element 14, and FIG. 7B is a cross-sectional view taken along line BB in FIG. 7A.

  The thin film element 14 includes a substrate 32, a first coil conductor 66, a second coil conductor 67, a magnetic layer 55, a nonmagnetic layer 56, and a plurality of interlayer connection conductors V1 and V2.

  Five first coil conductors 66 are formed on the first surface PS1 of the substrate 32. The five first coil conductors 66 are generally conductor patterns extending in the Y direction, and are arranged in the X direction. A magnetic layer 55 is formed on the first surface PS1 of the substrate 32. The entire first coil conductor 66 is covered with a magnetic layer 55 as shown in FIG. The magnetic layer 55 is, for example, magnetic ferrite. Five second coil conductors 67 are formed on the top surface of the magnetic layer. The five second coil conductors 67 are conductor patterns extending in the Y direction, and are arranged in the X direction. One end of the first coil conductor 66 is connected to one end of the second coil conductor 67 via an interlayer connection conductor V3 penetrating the magnetic layer 55. The other end of the first coil conductor 66 is connected to the other end of the second coil conductor 67 via the interlayer connection conductor V3.

  The first coil conductor 66, the second coil conductor 67, and the interlayer connection conductor V3 form a coil-shaped inductor having a winding axis AX1 along the X direction. The coiled inductor is a helical coil conductor of about 5 turns and is a passive element (thin film inductor) formed by a thin film process.

  A nonmagnetic layer 56 is formed on the upper surface of the magnetic layer 55. The second coil conductor 67 is entirely covered with a nonmagnetic layer 56 as shown in FIG. A first electrode P1 is formed on the top surface of the nonmagnetic layer 56, and a second electrode P2 is formed on the second surface S2 of the substrate 32. The first electrode P1 is connected to one end of the coil-shaped inductor via an interlayer connection conductor V1 that penetrates the nonmagnetic material layer 56, and the second electrode P2 is connected via an interlayer connection conductor V2 that penetrates the substrate 32. Connected to the other end of the coiled inductor. The nonmagnetic layer 56 is, for example, nonmagnetic ferrite.

  With this configuration, the thin film element 14 functions as an inductor.

  Even a connection element including the thin film element 14 according to the present embodiment has the same effects as those of the connection element 101 according to the first embodiment described above.

  In the present embodiment, the winding axis AX1 of the coiled inductor is along the X direction. With this configuration, it is possible to suppress the magnetic flux generated in the coiled inductor from being blocked by the first electrode P1 and the second electrode P2. Therefore, a coiled inductor having a predetermined inductance value can be realized. Note that the winding axis AX1 of the coiled inductor is not limited to the structure along the X direction, and the above operations and effects can be achieved as long as they are parallel to the first main surface S1 and the second main surface S2. Can play.

<< Other Embodiments >>
In the above-described embodiment, the configuration example in which the thin film element functions as an inductor or a capacitor has been described. However, the present invention is not limited to this. The thin film element may be configured to function as a resistor. Further, the thin film element may be configured to integrally include an inductor and a capacitor and function as an LC circuit.

  In the above-described embodiment, the passive element formed by the thin film process is provided on the first surface PS1 side of the substrate. However, the present invention is not limited to this. The passive element formed by the thin film process on the second surface PS2 side of the substrate may be provided on the second surface PS2 side of the substrate. Further, it may be provided on both sides of the first surface PS1 and the second surface PS2 of the substrate.

  In the thin film element of the present invention, the substrates 31 and 32 are not essential. In the case where the thin film element is a passive element that functions as a resistor, a thin plate of a resistive material itself can be used as the thin film element.

  Further, in the above-described embodiment, the example in which the planar shape of the thin film element is a square is shown, but the present invention is not limited to this configuration. The planar shape of the thin film element can be changed as appropriate within a range where the functions and effects of the present invention are achieved, such as a circle, an ellipse, and a polygon.

  In the present invention, “provided in a semicircular shape on the surface of the first electrode” is not limited to the case where the first conductive bonding material 21 provided on the surface of the first electrode has a complete semicircular shape. Absent. The first conductive bonding material 21 provided on the surface of the first electrode P1 as viewed from the direction (X direction or Y direction) along the first main surface S1 includes an arc shape or the like. Moreover, the shape of the 1st electroconductive joining material 21 seen from the direction (for example, X direction and Y direction) along a different 1st main surface may not be similar, and the 1st electroconductive joining material 21 is the same. For example, a shape like a right triangle pyramid is also included.

  Similarly, “provided in a semicircular shape on the surface of the second electrode” in the present invention is limited to the case where the second conductive bonding material 22 provided on the surface of the second electrode has a complete semicircular shape. is not. The second conductive bonding material 22 provided on the surface of the second electrode P2 as viewed from the direction (X direction or Y direction) along the second main surface S2 includes an arc shape or the like. Further, the shape of the second conductive bonding material 22 viewed from different directions along the second main surface S2 (for example, the X direction and the Y direction) may not be similar, and the second conductive bonding material 22 However, a shape such as a right triangular pyramid is also included.

AX1 ... winding axis C ... capacitor H1 ... distance between the external electrode of the semiconductor element before reflow and the mounting electrode of the mounting board H2 ... distance between the external electrode of the semiconductor element after reflowing and the mounting electrode of the mounting board P1 ... first electrode P2 ... second electrode PS1 ... first surface PS2 of substrate ... second surface S1 of substrate ... first main surface S2 of thin film element ... second main surfaces V1, V2, V3, V4 of thin film element ... Interlayer connection conductor 1 ... semiconductor element 2 ... mounting substrates 11, 13, 14 ... thin film element 21 ... first conductive bonding material 22 ... second conductive bonding material 23 ... third conductive bonding material 21S ... first conductive bonding Part 22S ... Second conductive joint 23S ... Third conductive joint 31, 32 ... Substrate 41 ... Passive element 51 ... Dielectric layer 52 ... Diffusion prevention layer 53 ... Insulator layer 54 ... Protective layer 55 ... Magnetic layer 56 ... Nonmagnetic layer 61 ... First capacitor electrode 62 ... Second capacitor Electrodes 63, 64 ... Conductor 65 ... Coil conductor 66 ... First coil conductor 67 ... Second coil conductors 71, 72 ... Semiconductor device external electrodes 81, 82 ... Mounting substrate mounting electrode 91 ... Circuit 92 ... Power feeding circuit 101 ... connecting element 201 ... electronic device

Claims (7)

A thin film element having a first main surface and a second main surface opposite to the first main surface;
A first electrode formed on the first main surface;
A second electrode formed on the second main surface;
A first conductive bonding material provided in a semicircular shape on the surface of the first electrode, as viewed from the direction along the first main surface;
A second conductive bonding material provided in a semicircular shape on the surface of the second electrode as viewed from the direction along the second main surface;
A connection element comprising: The first electrode and the first conductive bonding material are formed inside an outer edge of the first main surface, as viewed from a direction perpendicular to the first main surface,
2. The connection element according to claim 1, wherein the second electrode and the second conductive bonding material are formed inside an outer edge of the second main surface when viewed from a direction perpendicular to the second main surface. The thin film element is
A substrate having a first surface and a second surface;
A passive element formed by a thin film process on at least one of the first surface and the second surface;
The connection element according to claim 1, comprising:   The connection element according to claim 3, wherein the passive element is a capacitor. The passive element is a coiled inductor having a winding axis,
The connection element according to claim 3, wherein the winding axis is parallel to the first main surface and the second main surface.   The connection element according to claim 1, wherein the first conductive bonding material and the second conductive bonding material are solder. A semiconductor element having a plurality of external electrodes;
A mounting substrate having a plurality of mounting electrodes;
A mounting structure of the semiconductor element with respect to the mounting substrate,
A thin film element having a first main surface and a second main surface opposite to the first main surface;
A first electrode formed on the first main surface;
A second electrode formed on the second main surface;
A first conductive joint provided on a surface of the first electrode;
A second conductive joint provided on the surface of the second electrode;
A third conductive joint;
Further comprising
Some external electrodes among the plurality of external electrodes are connected to the first electrode through the first conductive joint,
A part of the plurality of mounting electrodes is connected to the second electrode through the second conductive joint,
The other mounting electrode among the plurality of mounting electrodes is connected to the other external electrode among the plurality of external electrodes through the third conductive joint portion. Mounting structure.

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