JP2017055006A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device capable of improving light-emitting efficiency.SOLUTION: A light-emitting device 110 includes: a base 51; first and second optical regions 21 and 22; first to third light-emitting units 11 to 13; a first conductive layer 61; and a first connection layer 41. The first to third optical regions 21 to 23 are separated from the base 51 in a first direction. The first to third light-emitting units 11 to 13 are respectively provided between the first to third optical regions 21 to 23 and the base 51. The first conductive layer 61 is provided between the first light-emitting unit 11 and the base 51, and connected to the first light-emitting unit 11. The first connection layer 41 connects the first conductive layer 61 and the second light-emitting unit 12. The difference between the peak wavelength of the first light emitted from the first light-emitting unit 11 and passed through the first optical region 21 and the peak wavelength of the third light emitted from the third light-emitting unit 13 and passed through the third optical region 23 is larger than the difference between the peak wavelength of the first light emission emitted from the first light-emitting unit 11 and the peak wavelength of the third light emission emitted from the third light-emitting unit 13.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a light emitting device.

  There is a light emitting device in which a semiconductor light emitting element such as an LED (Light Emitting Diode) and a phosphor layer are combined. In the light emitting device, improvement in efficiency is required.

JP 2014-232841 A

  Embodiments of the present invention provide a light emitting device capable of improving luminous efficiency.

  According to the embodiment of the present invention, the light emitting device includes a base, first and second optical regions, first to third light emitting units, a first conductive layer, and a first connection layer. The first optical region is separated from the base in the first direction. The first light emitting unit is provided between the first optical region and the base, and includes a first conductivity type first semiconductor layer and a second conductivity type first counter semiconductor layer. The first conductive layer is provided between the first light emitting unit and the base body and is electrically connected to the first counter semiconductor layer. The second optical region is separated from the base in the first direction and is aligned with the first optical region in a direction intersecting the first direction. The second light emitting unit is provided between the second optical region and the base, and includes a second semiconductor layer of the first conductivity type and a second counter semiconductor layer of the second conductivity type. The first connection layer electrically connects the first conductive layer and the second semiconductor layer. The third optical region is aligned with the first optical region in a direction that is separated from the base in the first direction and intersects the first direction. The third light emitting unit is provided between the third optical region and the base, and includes a third semiconductor layer of the first conductivity type and a third counter semiconductor layer of the second conductivity type. A difference between a peak wavelength of the first light emitted from the first light emitting unit and passed through the first optical region and a peak wavelength of the third light emitted from the third light emitting unit and passed through the third optical region. Is larger than the difference between the peak wavelength of the first emission emitted from the first light emitting unit and the peak wavelength of the third emission emitted from the third light emitting unit.

FIG. 1A to FIG. 1C are schematic views illustrating the light emitting device according to the first embodiment. FIG. 2A and FIG. 2B are schematic cross-sectional views illustrating another light emitting device according to the first embodiment. FIG. 3A and FIG. 3B are schematic cross-sectional views illustrating another light emitting device according to the first embodiment. FIG. 4A and FIG. 4B are schematic cross-sectional views illustrating another light emitting device according to the first embodiment. FIG. 5A and FIG. 5B are schematic cross-sectional views illustrating the light emitting device according to the second embodiment. FIGS. 6A and 6B are schematic plan views illustrating the light emitting device according to the third embodiment. FIG. 7A to FIG. 7D are schematic views illustrating light emitting devices.

Each embodiment will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Even in the case of representing the same part, the dimensions and ratios may be represented differently depending on the drawings.
In the present specification and drawings, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(First embodiment)
FIG. 1A to FIG. 1C are schematic views illustrating the light emitting device according to the first embodiment. FIG. 1A is a plan view. FIG. 1B is a cross-sectional view taken along line A1-A2 of FIG. FIG. 1C is a cross-sectional view taken along line B1-B2 of FIG.

  As shown in FIGS. 1A to 1C, the light emitting device 110 according to the present embodiment includes a base 51, a first optical region 21, a second optical region 22, and a first light emitting unit 11. The second light emitting unit 12, the third light emitting unit 13, the first conductive layer 61, and the first connection layer 41 are included.

  The first optical region 21 is separated from the base body 51 in the first direction.

  The first direction is the Z-axis direction. One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.

  The first light emitting unit 11 is provided between the first optical region 21 and the base 51. The first conductive layer 61 is provided between the first light emitting unit 11 and the base 51 and is electrically connected to the first light emitting unit 11.

  The second optical region 22 is separated from the base body in the first direction. The second optical region 22 is aligned with the first optical region 21 in a direction intersecting the first direction. The second light emitting unit 12 is provided between the second optical region 22 and the base body 51.

  The first connection layer 41 electrically connects the first conductive layer 61 and the second light emitting unit 12. The first light emitting unit 11 is connected in series with the second light emitting unit 12 by the first connection layer 41.

  The first connection layer 41 includes at least one of a conductor and a semiconductor. The first connection layer 41 includes, for example, a metal layer. The first connection layer 41 may include a semiconductor layer. The first connection layer 41 may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. These semiconductor layers are connected in the forward direction.

  The third optical region 23 is separated from the base body 51 in the first direction. The third optical region 23 is aligned with the first optical region 21 in a direction intersecting the first direction. The third optical region 23 is aligned with the second optical region 22 in a direction crossing the first direction. The third light emitting unit 13 is provided between the third optical region 23 and the base body 51.

  In this example, a fourth light emitting unit 14, a third conductive layer 63, and a second connection layer 42 are further provided.

  The fourth optical region 24 is separated from the base body 51 in the first direction. The fourth optical region 24 is aligned with the third optical region 23 in a direction crossing the first direction. The fourth optical region 24 is aligned with the first optical region 21 in a direction crossing the first direction. The fourth optical region 24 is aligned with the second optical region 22 in a direction crossing the first direction. The fourth light emitting unit 14 is provided between the fourth optical region 24 and the base 51.

  The third conductive layer 63 is provided between the third light emitting unit 13 and the base 51 and is electrically connected to the third light emitting unit 13.

  The second connection layer 42 electrically connects the third conductive layer 63 and the fourth light emitting unit 14. The third light emitting unit 13 is connected in series with the fourth light emitting unit 14 by the second connection layer 42.

  The second connection layer 42 also includes at least one of a conductor and a semiconductor. The second connection layer 42 includes, for example, a metal layer. The second connection layer 42 may include a semiconductor layer. The second connection layer 42 may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. These semiconductor layers are connected in the forward direction.

  The first to fourth light emitting units 11 to 14 are, for example, semiconductor light emitting elements. Examples of these light emitting units will be described.

  The first light emitting unit 11 includes a first semiconductor layer 11a of a first conductivity type, a first counter semiconductor layer 11b of a second conductivity type, and a first intermediate semiconductor layer 11c.

  The first conductivity type is, for example, one of n-type and p-type. The second conductivity type is the other of n-type and p-type. In the following example, the first conductivity type is n-type, and the second conductivity type is p-type.

  The first opposing semiconductor layer 11 b is provided between the first semiconductor layer 11 a and the base body 51. The first intermediate semiconductor layer 11c is provided between the first semiconductor layer 11a and the first counter semiconductor layer 11b.

  The second light emitting unit 12 includes a first conductivity type second semiconductor layer 12a, a second conductivity type second opposing semiconductor layer 12b, and a second intermediate semiconductor layer 12c. The second opposing semiconductor layer 12 b is provided between the second semiconductor layer 11 a and the base body 51. The second intermediate semiconductor layer 12c is provided between the second semiconductor layer 12a and the second opposing semiconductor layer 12b.

  The third light emitting unit 13 includes a third semiconductor layer 13a of the first conductivity type, a third counter semiconductor layer 13b of the second conductivity type, and a third intermediate semiconductor layer 13c. The third counter semiconductor layer 13 b is provided between the third semiconductor layer 13 a and the base body 51. The third intermediate semiconductor layer 13c is provided between the third semiconductor layer 13a and the third counter semiconductor layer 13b.

  The fourth light emitting unit 14 includes a first conductivity type fourth semiconductor layer 14a, a second conductivity type fourth opposing semiconductor layer 14b, and a fourth intermediate semiconductor layer 14c. The fourth opposing semiconductor layer 14 b is provided between the fourth semiconductor layer 14 a and the base body 51. The fourth intermediate semiconductor layer 14c is provided between the fourth semiconductor layer 14a and the fourth counter semiconductor layer 14b.

  The first conductive layer 61 is provided between the first opposing semiconductor layer 11 b and the base body 51. The first conductive layer 61 is electrically connected to the first counter semiconductor layer 11b. The first connection layer 41 electrically connects the first conductive layer 61 and the second semiconductor layer 12a. The first connection layer 41 electrically connects the first conductive layer 61 and the second light emitting unit 12.

  The third conductive layer 63 is provided between the third counter semiconductor layer 13 b and the base body 51. The third conductive layer 63 is electrically connected to the third counter semiconductor layer 13b. The second connection layer 42 electrically connects the third conductive layer 63 and the fourth light emitting unit 14. The second connection layer 42 electrically connects the third conductive layer 63 and the fourth semiconductor layer 14a.

  In this example, a second conductive layer 62, a first pad electrode 48a, and a second pad electrode 48b are further provided.

  The second conductive layer 62 is provided between the base 51 and the second opposing semiconductor layer 12b. The second conductive layer 62 is electrically connected to the second counter semiconductor layer 12b. The first pad electrode 48a is electrically connected to the first semiconductor layer 11a. In this example, the first semiconductor layer 11 a is disposed between the first pad electrode 48 a and the base 51. The second pad electrode 48 b is electrically connected to the second conductive layer 62. In this example, the second pad electrode 48b is aligned with the second light emitting unit 12 in a direction crossing the first direction.

  A voltage is applied between the first pad electrode 48a and the second pad electrode 48b. Light is emitted from the first light emitting unit 11 and the second light emitting unit 12. The light emitted from the first light emitting unit 11 is emitted to the outside through the first optical region 21. The light emitted from the second light emitting unit 12 is emitted to the outside through the second optical region 22.

  In this example, a fourth conductive layer 64, a third pad electrode 48c, and a fourth pad electrode 48d are further provided.

  The fourth conductive layer 64 is provided between the base 51 and the fourth counter semiconductor layer 14b. The fourth conductive layer 64 is electrically connected to the fourth counter semiconductor layer 14b. The third pad electrode 48c is electrically connected to the third semiconductor layer 13a. In this example, the third semiconductor layer 13 a is disposed between the third pad electrode 48 c and the base body 51. The fourth pad electrode 48d is electrically connected to the fourth conductive layer 64. In this example, the fourth pad electrode 48d is aligned with the fourth light emitting unit 14 in a direction intersecting the first direction.

  A voltage is applied between the third pad electrode 48c and the fourth pad electrode 48d. Light is emitted from the third light emitting unit 13 and the fourth light emitting unit 14. The light emitted from the third light emitting unit 13 is emitted to the outside through the third optical region 23. The light emitted from the fourth light emitting unit 14 is emitted to the outside through the fourth optical region 24.

  For example, first to fourth wirings WR1 to WR4 are further provided. The first wiring WR1 is connected to the first pad electrode 48a and is electrically connected to the first semiconductor layer 11a of the first light emitting unit 11. The second wiring WR2 is connected to the second pad electrode 48b and is electrically connected to the second counter semiconductor layer 12b of the second light emitting unit 12. The third wiring WR3 is connected to the third pad electrode 48c and is electrically connected to the third semiconductor layer 13a of the third light emitting unit 13. The fourth wiring WR4 is connected to the fourth pad electrode 48c and is electrically connected to the fourth counter semiconductor layer 14b of the fourth light emitting unit 14.

  In this example, these wirings are covered with the first to fourth optical regions 21 to 24, respectively. These wirings may not be covered with the first to fourth optical regions 21 to 24.

  The light emitting device 110 further includes an intermediate layer 52. The intermediate layer 52 is formed between the first conductive layer 61 and the base 51, between the second conductive layer 62 and the base 51, between the third conductive layer 63 and the base 51, and between the fourth conductive layer 64 and the base. 51. In this example, an insulating layer 52i is further provided. The insulating layer 52i is formed between the first conductive layer 61 and the intermediate layer 52, between the second conductive layer 62 and the intermediate layer 52, between the third conductive layer 63 and the intermediate layer 52, and the fourth conductive layer. 64 and the intermediate layer 52. For example, the insulating layer 52 i insulates the semiconductor layers (for example, semiconductor layers of the second conductivity type) of the first to fourth light emitting units 11 to 14 from the base body 51. For example, the intermediate layer 52 joins the base 51 and the insulating layer 52i.

  For example, the first to fourth conductive layers 61 to 64 are light reflective. The light reflectance of these conductive layers is higher than that of the base 51, for example. For example, the reflectance of the first conductive layer 61 with respect to light having the first emission wavelength (for example, peak wavelength) emitted from the first light emitting unit 11 is higher than the reflectance of the substrate 51 with respect to the light. For example, the reflectance of the second conductive layer 62 with respect to light having the second emission wavelength (for example, peak wavelength) emitted from the second light emitting unit 12 is higher than the reflectance of the substrate 51 with respect to the light. For example, the reflectance of the third conductive layer 63 with respect to light of the third emission wavelength (for example, peak wavelength) emitted from the third light emitting unit 13 is higher than the reflectance of the substrate 51 with respect to the light. For example, the reflectance of the fourth conductive layer 64 with respect to the light of the wavelength of the fourth light emission (for example, peak wavelength) emitted from the fourth light emitting unit 14 is higher than the reflectance of the substrate 51 with respect to the light.

  The first to fourth conductive layers 61 to 64 include, for example, at least one of silver and aluminum. The base 51 includes, for example, a silicon substrate. The base 51 may include, for example, at least one of copper and nickel.

  In the present embodiment, the peak wavelength of the first light emitted from the first light emitting unit 11 and passing through the first optical region 21 is the peak wavelength of the third light emitted from the third light emitting unit 13 and passed through the third optical region 23. Different from peak wavelength. The difference between the peak wavelength of the first light and the peak wavelength of the third light is the difference between the peak wavelength of the first emission emitted from the first light emitting unit 11 and the third emission emitted from the third light emitting unit 13. It is larger than the difference from the peak wavelength. The difference between the peak wavelength of the first light and the peak wavelength of the third light is the peak wavelength of the first light and the peak wavelength of the second light emitted from the second light emitting unit 12 and passing through the second optical region 22; Greater than the difference. The difference between the peak wavelength of the first light and the peak wavelength of the third light is larger than the difference between the peak wavelength of the first light emission and the peak wavelength of the second light emitted from the second light emitting unit 12. The difference between the peak wavelength of the third light and the peak wavelength of the fourth light emitted from the fourth light emitting unit 14 and passing through the fourth optical region 24 is the peak wavelength of the first light and the peak wavelength of the third light. And smaller than the difference.

  For example, the peak wavelength of the first light is substantially the same as the peak wavelength of the second light emitted from the second light emitting unit 12 and passing through the second optical region 22. For example, the peak wavelength of the third light is substantially the same as the peak wavelength of the fourth light emitted from the fourth light emitting unit 14 and passing through the fourth optical region 24.

  The intensity of the first light is highest at the peak wavelength of the first light. The intensity of the second light is highest at the peak wavelength of the second light. The intensity of the third light is highest at the peak wavelength of the third light. The intensity of the fourth light is highest at the peak wavelength of the fourth light.

  For example, the first light and the second light are the first color, and the third light and the fourth light are the second color. The second color is different from the first color.

  The first to fourth optical regions 21 to 24 are resin layers including, for example, a phosphor.

  For example, the first optical region 21 includes a plurality of first wavelength conversion particles 21p and a first resin body 21q. The first resin body 21q is provided around the plurality of first wavelength conversion particles 21p. The plurality of first wavelength conversion particles 21p absorb a part of the first emission emitted from the first light emitting unit 11 and emit the first converted light. The peak wavelength of the first converted light is different from the peak wavelength of the first emission. The first light emitted from the first optical region 21 is a combined light of the first light emission and the first converted light. The first wavelength conversion particle 21p includes, for example, a phosphor.

  For example, the second optical region 22 includes a plurality of second wavelength conversion particles 22p and a second resin body 22q. The second resin body 22q is provided around the plurality of second wavelength conversion particles 22p. The plurality of second wavelength conversion particles 22p absorb a part of the second light emission emitted from the second light emitting unit 12 and emit the second converted light. The peak wavelength of the second converted light is different from the peak wavelength of the second emission. The second light emitted from the second optical region 22 is a combined light of the second light emission and the second converted light. The second wavelength conversion particle 22p includes, for example, a phosphor. The material of the second wavelength conversion particle 22p may be the same as the material of the first wavelength conversion particle 21p. For example, at least a part of the plurality of second wavelength conversion particles 22p includes a material included in the plurality of first wavelength conversion particles 21p.

  For example, the third optical region 23 includes a plurality of third wavelength conversion particles 23p and a third resin body 23q. The third resin body 23q is provided around the plurality of third wavelength conversion particles 23p. The plurality of third wavelength conversion particles 23p absorbs part of the third light emission emitted from the third light emitting unit 13 and emits third converted light. The peak wavelength of the third converted light is different from the peak wavelength of the third emission. The third light emitted from the third optical region 23 is a combined light of the third light emission and the third converted light. The third wavelength conversion particle 23p includes, for example, a phosphor. The material of the third wavelength conversion particle 23p is different from the material of the first wavelength conversion particle 21p.

  For example, the fourth optical region 24 includes a plurality of fourth wavelength conversion particles 24p and a fourth resin body 24q. The fourth resin body 24q is provided around the plurality of fourth wavelength conversion particles 24p. The plurality of fourth wavelength conversion particles 24p absorb a part of the fourth light emission emitted from the fourth light emitting unit 14 and emit the fourth converted light. The peak wavelength of the fourth converted light is different from the peak wavelength of the fourth emission. The fourth light emitted from the fourth optical region 24 is a combined light of the fourth light emission and the fourth converted light. The fourth wavelength conversion particle 24p includes, for example, a phosphor. The material of the fourth wavelength conversion particle 24p may be the same as the material of the third wavelength conversion particle 23p.

  For example, the first to fourth light emissions are blue. The first and second converted light is, for example, red. The third and fourth converted light is, for example, green.

  The 1st light emission part 21 and the 2nd light emission part 22 are multi junction type LED, for example. The 3rd light emission part 23 and the 4th light emission part 24 are multi junction type LED, for example.

  In the present embodiment, a plurality of light emitting units are connected in series. Thus, when a high input voltage is used, the input voltage is divided in the plurality of light emitting units. A voltage lower than the input voltage is applied to each of the plurality of light emitting units. An appropriate voltage is applied to the plurality of light emitting units. Thereby, high luminous efficiency is obtained.

  Furthermore, the peak wavelength of the first light that has passed through the first optical region 21 is different from the peak wavelength of the third light that has passed through the third optical region 23. The colors are different from each other. Light of a desired color is obtained by the first light and the third light.

  In this example, one end 41 p of the first connection layer 41 is disposed between the first conductive layer 61 and the base body 51. At least a part of the second semiconductor layer 12 a is disposed between the other end 41 q of the first connection layer 41 and the base body 51.

  In the light emitting device 110, an insulating layer 41 i is provided between the first connection layer 41 and the second light emitting unit 12. For example, the second opposing semiconductor layer 12b has a side surface 12bs. The side surface 12bs intersects the direction perpendicular to the first direction. At least a part of the insulating layer 41i is disposed between a part of the first connection layer 41 and the side surface 12bs. The first connection layer 41 and the second opposing semiconductor layer 12b are electrically insulated by the insulating layer 41i. The insulating layer 41 i is also provided between the side surface of the second intermediate semiconductor layer 12 c and the first connection layer 41.

  For example, the insulating layer 42 i is provided between the second connection layer 42 and the fourth light emitting unit 14. Provided. For example, the fourth opposing semiconductor layer 14b has a side surface 14bs. The side surface 14bs intersects the direction perpendicular to the first direction. At least a part of the insulating layer 42i is disposed between a part of the second connection layer 42 and the side surface 14bs. The insulating layer 42i electrically insulates the second connection layer 42 and the fourth opposing semiconductor layer 14b. The insulating layer 42 i is also provided between the side surface of the fourth intermediate semiconductor layer 14 c and the second connection layer 42.

  In this example, the first optical region 21 is continuous with the second optical region 22. The third optical region 23 is continuous with the fourth optical region 24. For example, a first material that becomes the first optical region 21 and the second optical region 22 is applied on the first light emitting unit 11 and the second light emitting unit 12. A sheet containing the first material may be attached. For example, a second material that becomes the third optical region 23 and the fourth optical region 24 is applied on the third light emitting unit 13 and the fourth light emitting unit 14. A sheet containing the second material may be attached.

FIG. 2A and FIG. 2B are schematic cross-sectional views illustrating another light emitting device according to the first embodiment.
FIG. 2A corresponds to a cross section taken along line A1-A2 of FIG. FIG. 2B corresponds to a cross section along line B1-B2 of FIG.

  As shown in FIGS. 2A and 2B, in another light emitting device 111 according to this embodiment, the first optical region 21 is separated from the second optical region 22. The third optical region 23 is separated from the fourth optical region 24. Other than this, it is the same as the light emitting device 110, and the description is omitted.

  Also in this example, the first material that becomes the first optical region 21 and the second optical region 22 is applied on the first light emitting unit 11 and the second light emitting unit 12. A sheet containing the first material may be attached. A second material that becomes the third optical region 23 and the fourth optical region 24 is applied on the third light emitting unit 13 and the fourth light emitting unit 14. A sheet containing the second material may be attached.

FIG. 3A and FIG. 3B are schematic cross-sectional views illustrating another light emitting device according to the first embodiment.
FIG. 3A corresponds to a cross section taken along line A1-A2 of FIG. FIG. 3B corresponds to a cross section taken along line B1-B2 of FIG.

  As shown in FIGS. 3A and 3B, in another light emitting device 112 according to the present embodiment, the surface of the optical region is curved. Except this, it is the same as the light emitting device 111, and thus the description is omitted.

  For example, the first optical region 21 includes a first surface 21a on the first light emitting unit 11 side and a second surface 21b on the opposite side to the first surface 21a. At least a part of the second surface 21b includes a convex curved surface. The second optical region 22 has a third surface 22a on the second light emitting unit 12 side and a fourth surface 22b on the opposite side to the third surface 22a. At least a part of the fourth surface 22b includes a convex curved surface. The third optical region 23 has a fifth surface 23a on the third light emitting unit 13 side and a sixth surface 23b on the opposite side to the fifth surface 23a. At least a part of the sixth surface 23b includes a convex curved surface. The fourth optical region 24 has a seventh surface 24a on the fourth light emitting unit 14 side and an eighth surface 24b on the opposite side to the seventh surface 24a. At least a part of the eighth surface 24b includes a convex curved surface.

  These curved surfaces may be formed, for example, by applying a material that becomes an optical region. The distribution of the emitted light can be controlled by the curved surface.

FIG. 4A and FIG. 4B are schematic cross-sectional views illustrating another light emitting device according to the first embodiment.
FIG. 4A corresponds to the cross section along line A1-A2 of FIG. FIG. 4B corresponds to the B1-B2 line cross section of FIG.

  As shown in FIGS. 4A and 4B, in another light emitting device 113 according to this embodiment, the first optical region 21 and the second optical region 22 do not include a phosphor. On the other hand, the third optical region 23 and the fourth optical region 24 include a phosphor. Except this, it is the same as the light emitting device 111, and thus the description is omitted.

  For example, the peak wavelength of the first light emitted from the first optical region 21 is substantially the same as the peak wavelength of the first light emitted from the first light emitting unit 11. For example, the peak wavelength of the second light emitted from the second optical region 22 is substantially the same as the peak wavelength of the second light emitted from the second light emitting unit 12.

  On the other hand, the peak wavelength of the third light emitted from the third optical region 23 is different from the peak wavelength of the third light emitted from the third light emitting unit 13. The peak wavelength of the fourth light emitted from the fourth optical region 24 is different from the peak wavelength of the fourth light emitted from the fourth light emitting unit 14.

  For example, the third optical region 21 includes a plurality of third wavelength conversion particles 23p and a third resin body 23q provided around the plurality of third wavelength conversion particles 23p. The plurality of third wavelength conversion particles 23p absorbs part of the third light emission emitted from the third light emitting unit 13 and emits third converted light. The peak wavelength of the third converted light is different from the peak wavelength of the third emission.

  For example, the fourth optical region 24 includes a plurality of fourth wavelength conversion particles 24p and a fourth resin body 24q provided around the plurality of fourth wavelength conversion particles 24p. The plurality of fourth wavelength conversion particles 24p absorb a part of the fourth light emission emitted from the fourth light emitting unit 14 and emit the fourth converted light. The peak wavelength of the fourth converted light is different from the peak wavelength of the fourth emission.

  Thus, one of the plurality of optical regions that emit light of different colors does not have to convert the wavelength.

  In the light emitting devices 111 to 113, first to fourth wirings WR1 to WR4 may be provided. These wirings may be covered by the first to fourth optical regions 21 to 24, respectively, or may not be covered.

(Second Embodiment)
The planar configuration of the semiconductor device according to the second embodiment is substantially the same as that of the light emitting device 110, for example. The cross-sectional configuration of the semiconductor device according to the second embodiment will be described below.

FIG. 5A and FIG. 5B are schematic cross-sectional views illustrating the light emitting device according to the second embodiment.
FIG. 5A corresponds to a cross section taken along line A1-A2 of FIG. FIG. 5B corresponds to the cross section along line B1-B2 of FIG. Hereinafter, the light emitting device 120 according to the present embodiment will be described with respect to parts different from the first embodiment. The configuration described in regard to the first embodiment can be applied to portions other than the following description.

  In the light emitting device 120 according to the present embodiment, the first semiconductor layer 11a includes a first semiconductor region 11p and a second semiconductor region 11q. The second semiconductor region 11q is aligned with the first semiconductor region 11p in a direction crossing the first direction. The first opposing semiconductor layer 11b is disposed between the second semiconductor region 11q and the base body 51. The first intermediate semiconductor layer 11c is disposed between the second semiconductor region 11q and the first counter semiconductor layer 11b.

  The second semiconductor layer 12a includes a third semiconductor region 12p and a fourth semiconductor region 12q. The fourth semiconductor region 12q is aligned with the third semiconductor region 12p in a direction crossing the first direction. The second opposing semiconductor layer 12b is disposed between the fourth semiconductor region 12q and the base body 51. The second intermediate semiconductor layer 12c is disposed between the fourth semiconductor region 12q and the second counter semiconductor layer 12b.

  The third semiconductor layer 13a includes a fifth semiconductor region 13p and a sixth semiconductor region 13q. The sixth semiconductor region 13q is aligned with the fifth semiconductor region 13p in a direction crossing the first direction. The third counter semiconductor layer 13b is disposed between the sixth semiconductor region 13q and the base body 51. The third intermediate semiconductor layer 13c is disposed between the sixth semiconductor region 13q and the third counter semiconductor layer 13b.

  The fourth semiconductor layer 14a includes a seventh semiconductor region 14p and an eighth semiconductor region 14q. The eighth semiconductor region 14q is aligned with the seventh semiconductor region 14p in a direction crossing the first direction. The fourth opposing semiconductor layer 14b is disposed between the eighth semiconductor region 14q and the base body 51. The fourth intermediate semiconductor layer 14c is disposed between the eighth semiconductor region 14q and the fourth counter semiconductor layer 14b.

  The first conductive layer 61 is provided between the first opposing semiconductor layer 11b and the base 51, and is electrically connected to the first opposing semiconductor layer 11b. The second conductive layer 62 is provided between the second opposing semiconductor layer 12b and the base 51, and is electrically connected to the second opposing semiconductor layer 12b. The third conductive layer 63 is provided between the third counter semiconductor layer 13b and the base 51, and is electrically connected to the third counter semiconductor layer 13b. The fourth conductive layer 64 is provided between the fourth opposing semiconductor layer 14b and the base 51, and is electrically connected to the fourth opposing semiconductor layer 14b.

  One end 41 p of the first connection layer 41 is disposed between the first conductive layer 61 and the base body 51. One end 41 p of the first connection layer 41 is electrically connected to the first conductive layer 61. The other end 41q of the first connection layer 41 is disposed between the third semiconductor region 12p and the base body 51. The other end 41q of the first connection layer 41 is electrically connected to the third semiconductor region 12p.

  One end 42 p of the second connection layer 42 is disposed between the third conductive layer 63 and the base body 51. The other end 42q of the second connection layer 42 is disposed between the seventh semiconductor region 14p and the base body 51.

Also in this example, the first to fourth pad electrodes 48a to 48d are provided.
The first pad electrode 48a is electrically connected to the first semiconductor layer 11a. The first pad electrode 48a is electrically connected to the first semiconductor region 11p. The first pad electrode 48a is aligned with the first light emitting unit 11 in a direction crossing the first direction.

  The second pad electrode 48 b is electrically connected to the second conductive layer 62. The second pad electrode 48b is aligned with the second light emitting unit 12 in a direction crossing the first direction.

  The third pad electrode 48c is electrically connected to the third semiconductor layer 13a. The third pad electrode 48c is electrically connected to the fifth semiconductor region 13p. The third pad electrode 48c is aligned with the third light emitting unit 13 in a direction crossing the first direction.

  The fourth pad electrode 48d is electrically connected to the fourth conductive layer 64. The fourth pad electrode 48d is aligned with the second light emitting unit 12 in a direction crossing the first direction.

In this example, first to fourth pad conductive layers 48al to 48dl are provided.
One end of the first pad conductive layer 48al is provided between the first semiconductor region 11p and the base 51, and is electrically connected to the first semiconductor region 11p. The other end of the first pad conductive layer 48al is provided between the first pad electrode 48a and the base 51, and is electrically connected to the first pad electrode 48a.

  One end of the second pad conductive layer 48bl is provided between the second conductive layer 62 and the base 51, and is electrically connected to the second conductive layer 62. The other end of the second pad conductive layer 48bl is provided between the second pad electrode 48b and the base 51 and is electrically connected to the second pad electrode 48b.

  One end of the third pad conductive layer 48cl is provided between the fifth semiconductor region 13p and the base 51, and is electrically connected to the fifth semiconductor region 13p. The other end of the third pad conductive layer 48cl is provided between the third pad electrode 48c and the base 51, and is electrically connected to the third pad electrode 48c.

  One end of the fourth pad conductive layer 48 sl is provided between the fourth conductive layer 64 and the base 51 and is electrically connected to the fourth conductive layer 64. The other end of the fourth pad conductive layer 48dl is provided between the fourth pad electrode 48d and the base 51, and is electrically connected to the fourth pad electrode 48d.

  The light emitting device 120 further includes an insulating layer 53. The insulating layer 53 is provided between the first conductive layer 61 and the base body 51. The insulating layer 53 is further provided between the second conductive layer 62 and the base 51, between the third conductive layer 63 and the base 51, and between the fourth conductive layer 64 and the base 51. The insulating layer 53 insulates the semiconductor layer (second conductivity type semiconductor layer) included in the first to fourth light emitting units 11 to 14 from the base body 51.

  In this example, an intermediate layer 52 is provided. The intermediate layer 52 is provided between the insulating layer 53 and the base body 51. For example, the intermediate layer 52 joins the insulating layer 53 and the base 51. For the intermediate layer 52, for example, solder is used. The intermediate layer 52 includes, for example, AuSn.

  In the light emitting device 120, for example, the light emitting unit includes a lateral conduction type LED.

  Also in the light emitting device 120, the peak wavelength of the first light emitted from the first light emitting unit 11 and passing through the first optical region 21 is the peak wavelength of the third light emitted from the third light emitting unit 13 and passed through the third optical region 23. Different from peak wavelength.

  For example, the peak wavelength of the first light is substantially the same as the peak wavelength of the second light emitted from the second light emitting unit 12 and passing through the second optical region 22. The peak wavelength of the third light is substantially the same as the peak wavelength of the fourth light emitted from the fourth light emitting unit 14 and passing through the fourth optical region 24. For example, the first light and the second light are the first color, and the third light and the fourth light are the second color. The second color is different from the first color.

  Also in the present embodiment, a plurality of light emitting units are connected in series. Thereby, high luminous efficiency is obtained. Furthermore, the peak wavelength of the first light that has passed through the first optical region 21 is different from the peak wavelength of the third light that has passed through the third optical region 23. The colors are different from each other. The desired color of light is obtained.

  In this example, the top surfaces of the first to fourth semiconductor layers have irregularities. The light extraction efficiency is improved by the unevenness. This unevenness may be provided in the light emitting devices 110 to 113.

  In this example, the first optical region 21 is continuous with the second optical region 22. The third optical region 23 is continuous with the fourth optical region 24. The first optical region 21 may be separated from the second optical region 22. The third optical region 23 may be separated from the fourth optical region 24.

  Also in the present embodiment, at least a part of the second surface 21b of the first optical region 21 may include a convex curved surface. At least a part of the fourth surface 22b of the second optical region 22 may include a convex curved surface. At least a part of the sixth surface 23b of the third optical region 23 may include a convex curved surface. At least a part of the eighth surface 24b of the fourth optical region 24 may include a convex curved surface.

  In the light emitting device 120, first to fourth wirings WR1 to WR4 may be provided. These wirings may be covered by the first to fourth optical regions 21 to 24, respectively, or may not be covered.

(Third embodiment)
FIGS. 6A and 6B are schematic plan views illustrating the light emitting device according to the third embodiment.
As shown to Fig.6 (a), the light-emitting device 130 which concerns on this embodiment also contains the 1st-4th optical areas 21-24 and the 1st-4th light emission parts 11-14. Although not shown in FIG. 6A, a base 51, first to fourth conductive layers 61 to 64, a first connection layer 41, and a second connection layer 42 are provided.

  The light emitting device 130 further includes first to fourth wirings WR1 to WR4. The first wiring WR1 is electrically connected to the first semiconductor layer 11a of the first light emitting unit 11. The second wiring WR2 is electrically connected to the second opposing semiconductor layer 12b of the second light emitting unit 12. The third wiring WR3 is electrically connected to the third semiconductor layer 13a of the third light emitting unit 13. The fourth wiring WR4 is electrically connected to the fourth counter semiconductor layer 14b of the fourth light emitting unit 14.

  A current is supplied to the first light emitting unit 11 and the second light emitting unit 12 via the first wiring WR1 and the second wiring WR2. Light emission from the first light emitting unit 11 and the second light emitting unit 12 is controlled. A current is supplied to the third light emitting unit 13 and the fourth light emitting unit 14 via the third wiring WR3 and the fourth wiring WR4. Light emission from the third light emitting unit 13 and the fourth light emitting unit 14 is controlled.

  Light emission from the first light emitting unit 11 and the second light emitting unit 12 can be controlled independently of light emission from the third light emitting unit 13 and the fourth light emitting unit 14. Thereby, the light containing a desired intermediate color is obtained.

  As shown in FIG. 6B, another light emitting device 131 according to this embodiment also includes first to fourth optical regions 21 to 24 and first to fourth light emitting units 11 to 14. Although not shown in FIG. 6B, a base 51, first to fourth conductive layers 61 to 64, a first connection layer 41, and a second connection layer 42 are provided.

  The light emitting device 131 further includes a first wiring WR1 and a second wiring WR2. The first wiring WR1 electrically connects the first semiconductor layer 11a of the first light emitting unit 11 and the third semiconductor layer 13a of the third light emitting unit 13. The second wiring WR <b> 2 electrically connects the second opposing semiconductor layer 12 b of the second light emitting unit 12 and the fourth opposing semiconductor layer 14 b of the fourth light emitting unit 14.

  By these wirings, current is supplied to the light emitting unit. In this example, light emission from the first light emitting unit 11 and light emission from the third light emitting unit 13 are controlled simultaneously.

FIG. 7A to FIG. 7D are schematic views illustrating light emitting devices.
These drawings illustrate the arrangement of light colors in the light emitting device according to the embodiment.
As shown in FIGS. 7A to 7C, a first color area A1, a second color area A2, a third color area A3, and a fourth color area A4 are provided. One of the first color region A1, the second color region A2, the third color region A4, and the fourth color region A4 corresponds to the first optical region 21, for example. Another one of the first color area A1, the second color area A2, the third color area A4, and the fourth color area A4 corresponds to the third optical area 23, for example.

  In the embodiment, in addition to the first optical region 21 and the third optical region 23 having different colors, optical regions having different colors may be provided.

  As shown in FIG. 7D, the first color area A1 and the second color area A2 may be alternately arranged.

  In the embodiment, for example, phosphor layers of a plurality of emission colors are provided on a plurality of junctions. For example, in one light emitting device, multicolor light emission can be obtained. Dimmable.

  There is a reference example in which a plurality of elements corresponding to the number of colors are provided. In this case, it is difficult to reduce the size. Since a plurality of elements are mounted, the process is complicated. Since a plurality of elements are used, it is difficult to control the light distribution pattern. Characteristics tend to be non-uniform in a plurality of elements. In the reference example of the multichip LED, in addition to the above problem, the efficiency is low due to light absorption of wiring and the like.

  In the embodiment, for example, fluorescent resins of different colors are applied to each chip of a multi-junction LED. For example, they are arranged by color for each column. In the multi-junction type LED, the chip interval can be reduced. With the same element size, the light emission area can be expanded. High luminous efficiency can be obtained. In the multi-junction type LED, the end surface of the support substrate is not exposed on the light emitting surface. For this reason, light is not absorbed by the end face of the support substrate. High luminous efficiency can be obtained.

  In the multi-junction type LED, multi-color light emission can be obtained with one element. Small variation in chip characteristics. Light distribution design and heat dissipation design become easy. Arbitrary colors can be obtained by combining colors. For example, full color (red, green, blue) can be obtained. For example, it can be applied to in-vehicle lamps (red, yellow). Different color temperature illumination is obtained. Miniaturization is possible. We can provide low-cost products.

  A plurality of regions (chips) of different colors can be arranged in a straight line. The plurality of regions can be arranged in a matrix.

  In the reference example of the multi-chip type LED, a wiring such as a gold wire is used for each element. This wiring has low reflectance and high light absorption. For this reason, luminous efficiency is low. The area occupied by the wire is large, and there is a limit to the expansion of the light emitting region.

  On the other hand, the multi-junction type LED is electrically connected inside the element. Light absorption by the wiring is suppressed.

  In the embodiment, the optical region can be formed by, for example, a spray method. The optical region can be formed by, for example, a potting method. The optical region can be formed by, for example, an inkjet method. A phosphor sheet or the like may be used as the optical region.

  According to the embodiment, a light emitting device capable of improving the light emission efficiency is provided.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. It ’s fine.

The embodiments of the present invention have been described above with reference to specific examples. However, embodiments of the present invention are not limited to these specific examples. For example, regarding the specific configuration of each element such as an optical region, a light emitting unit, a semiconductor layer, a conductive layer, and a connection layer included in the light emitting device, those skilled in the art similarly select the present invention by appropriately selecting from a known range It is included in the scope of the present invention as long as the same effect can be obtained.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all light-emitting devices that can be implemented by a person skilled in the art based on the light-emitting device described above as an embodiment of the present invention are also included in the scope of the present invention as long as they include the gist of the present invention. .

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  11-14 ... 1st-4th light emission part, 11a-14a ... 1st-4th semiconductor layer, 11b-14b ... 1st-4th opposing semiconductor layer, 11c-14c ... 1st-4th intermediate semiconductor layer, 11p, 11q ... 1st, 2nd semiconductor region, 12bs side surface, 12p, 12q ... 3rd, 4th semiconductor region, 13p, 13q ... 5th, 5th semiconductor region, 14bs ... side surface, 14p, 14q ... 7th, 8th semiconductor region, 21-24 ... 1st-4th optical region, 21a, 21b ... 1st, 2nd surface, 21p-24p ... 1st-4th wavelength conversion particle, 21q-24q ... 1st-4th Resin body, 22a, 22b ... 3rd, 4th surface, 23a, 23b ... 5th, 6th surface, 24a, 24b ... 7th, 8th surface, 41 ... 1st connection layer, 41i ... Insulating layer, 41p ... One end, 41q ... the other end, 42 ... the second connection layer, 4 2p ... one end, 42q ... the other end, 48a to 48d ... first to fourth pad electrodes, 48al to 48dl ... first to fourth pad conductive layers, 51 ... base, 52 ... intermediate layer, 52i ... insulating layer, 53 ... Insulating layer, 61 to 64 ... First to fourth conductive layers, 110 to 113, 120, 121 ... Light emitting device, A1 to A4 ... First to fourth color regions, WR1 to WR4 ... First to fourth wirings

Claims (15)

A substrate;
A first optical region spaced from the substrate in a first direction;
A first light emitting unit including a first conductive type first semiconductor layer and a second conductive type first opposing semiconductor layer provided between the first optical region and the base;
A first conductive layer provided between the first light emitting unit and the base and electrically connected to the first opposing semiconductor layer;
A second optical region that is spaced apart from the substrate in the first direction and is aligned with the first optical region in a direction that intersects the first direction;
A second light emitting unit provided between the second optical region and the base body and including a second semiconductor layer of the first conductivity type and a second opposing semiconductor layer of the second conductivity type;
A first connection layer for electrically connecting the first conductive layer and the second semiconductor layer;
A third optical region spaced apart from the substrate in the first direction and aligned with the first optical region in a direction intersecting the first direction;
A third light emitting unit provided between the third optical region and the base body and including a third semiconductor layer of the first conductivity type and a third opposing semiconductor layer of the second conductivity type;
With
A difference between a peak wavelength of the first light emitted from the first light emitting unit and passed through the first optical region and a peak wavelength of the third light emitted from the third light emitting unit and passed through the third optical region. Is a light emitting device that is larger than the difference between the peak wavelength of the first light emission emitted from the first light emitting unit and the peak wavelength of the third light emission emitted from the third light emitting unit.   The difference between the peak wavelength of the first light and the peak wavelength of the third light is the difference between the peak wavelength of the first light and the second light region emitted from the second light emitting unit. The light emitting device according to claim 1, wherein the light emitting device is larger than a difference between a peak wavelength of two lights.   The difference between the peak wavelength of the first light and the peak wavelength of the third light is the peak wavelength of the first light emission, the peak wavelength of the second light emitted from the second light emitting unit, The light-emitting device according to claim 1, wherein the light-emitting device is larger than the difference. The first optical region includes a plurality of first wavelength conversion particles and a first resin body provided around the plurality of first wavelength conversion particles,
The plurality of first wavelength conversion particles absorb a part of the first emission and emit first conversion light,
The light emitting device according to claim 1, wherein a peak wavelength of the first converted light is different from the peak wavelength of the first light emission. The third optical region includes a plurality of third wavelength conversion particles and a third resin body provided around the plurality of third wavelength conversion particles,
The plurality of third wavelength conversion particles absorb a part of the third light emission to emit third converted light,
The light emitting device according to claim 4, wherein a peak wavelength of the third converted light is different from a peak wavelength of the third light emission. The second optical region includes a plurality of second wavelength conversion particles, and a second resin body provided around the plurality of second wavelength conversion particles,
The plurality of second wavelength conversion particles absorb a part of the second light emission emitted from the second light emitting part and emit a second converted light,
The peak wavelength of the second converted light is different from the peak wavelength of the second emission,
6. The light-emitting device according to claim 4, wherein at least a part of the plurality of second wavelength conversion particles includes a material included in the plurality of first wavelength conversion particles. The peak wavelength of the first light is the same as the peak wavelength of the first light emission,
The light emitting device according to claim 1, wherein the peak wavelength of the third light is different from a peak wavelength of the third light emission. The first opposing semiconductor layer is provided between the first semiconductor layer and the base body,
The first light emitting unit further includes a first intermediate semiconductor layer provided between the first semiconductor layer and the first opposing semiconductor layer,
The second opposing semiconductor layer is provided between the second semiconductor layer and the substrate;
The second light emitting unit further includes a second intermediate semiconductor layer provided between the second semiconductor layer and the second opposing semiconductor layer,
The third opposing semiconductor layer is provided between the third semiconductor layer and the substrate;
The light emitting device according to claim 1, wherein the third light emitting unit further includes a third intermediate semiconductor layer provided between the third semiconductor layer and the third counter semiconductor layer. . A fourth optical region spaced apart from the substrate in the first direction and aligned with the third optical region in a direction intersecting the first direction;
A fourth light emitting unit provided between the fourth optical region and the base body and including a fourth semiconductor layer of the first conductivity type and a fourth opposing semiconductor layer of the second conductivity type;
A third conductive layer provided between the base and the third counter semiconductor layer and electrically connected to the third counter semiconductor layer;
A second connection layer for electrically connecting the third conductive layer and the fourth semiconductor layer;
Further comprising
The difference between the peak wavelength of the third light and the peak wavelength of the fourth light emitted from the fourth light emitting unit and passing through the fourth optical region is the difference between the peak wavelength of the first light and the first wavelength. The light emitting device according to claim 8, wherein the light emitting device is smaller than the difference from the peak wavelength of three lights. The fourth opposing semiconductor layer is provided between the fourth semiconductor layer and the substrate;
10. The light emitting device according to claim 8, wherein the fourth light emitting unit further includes a fourth intermediate semiconductor layer provided between the fourth semiconductor layer and the fourth counter semiconductor layer.   The light emitting device according to claim 1, wherein the first optical region is continuous with the second optical region.   The light emitting device according to claim 1, wherein the first optical region is separated from the second optical region. The first optical region has a first surface on the first light emitting unit side, and a second surface on the opposite side of the first surface,
The light emitting device according to claim 1, wherein at least a part of the second surface includes a convex curved surface. A first wiring that electrically connects the first semiconductor layer and the third semiconductor layer;
A second wiring electrically connecting the second opposing semiconductor layer and the fourth opposing semiconductor layer;
The light-emitting device according to claim 1, further comprising: A first wiring electrically connected to the first semiconductor layer;
A second wiring electrically connected to the second opposing semiconductor layer;
A third wiring electrically connected to the third semiconductor layer;
A fourth wiring electrically connected to the fourth opposing semiconductor layer;
The light-emitting device according to claim 1, further comprising: