JP2017045119A - Film thickness prediction program, film thickness prediction method, and simulation unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve prediction accuracy of plating film thickness.SOLUTION: The film thickness prediction program causes a computer to execute a series of processing to predict the height of a thin film laminated on a substrate in each mesh of the substrate segmented into a plurality of portions; to calculate an average surface area of the thin film in a plurality of meshes in the vicinity of an object mesh the height of which has been predicted; and to correct by increasing/reducing the height on the basis of the calculated surface area.SELECTED DRAWING: Figure 12

Description

  The present invention relates to a film thickness prediction program, a film thickness prediction method, and a simulation apparatus.

  In a wiring process in manufacturing a semiconductor device, the surface of a substrate on which copper plating or the like has been applied is polished and flattened by a CMP (Chemical Mechanical Planarization) technique or the like. Polishing conditions vary depending on the film thickness of the copper plating.

  A technique for accurately predicting the thickness of a thin film formed on a substrate surface using a groove shape function model expressing the shape of a wiring groove after expansion and contraction is known.

JP 2008-4683 A

Jianfeng Luo, Qing Su, Charles Chiang and Jamil Kawa, "A Layout Dependent Full-Chip Copper Electroplating Topography," International Conference on Computer-Aided Design, 2005

  The amount of deposited copper plating may be affected by the surrounding layout. In such a case, the above-described film thickness prediction technique may not provide sufficient accuracy for the plating film thickness.

  Therefore, in one aspect, the present invention aims to improve the prediction accuracy of the plating film thickness.

  According to one aspect, for each mesh obtained by dividing the substrate into a plurality of layers, the height of the thin film stacked on the substrate is predicted, and the thin film in the plurality of meshes around the target mesh whose height is predicted is determined. There is provided a film thickness prediction program for calculating an average surface area and causing a computer to perform a process of increasing / decreasing the height based on the calculated average surface area.

  Further, as a means for solving the above problems, a film thickness prediction method and a simulation apparatus can be used.

  The prediction accuracy of the plating film thickness can be improved.

It is explanatory drawing which shows the outline | summary of the manufacturing process procedure of LSI. It is a figure for demonstrating the dispersion | variation in the wiring by grinding | polishing. It is a figure for demonstrating the difference of the grinding | polishing result by the height difference of copper plating. It is a figure which shows the hardware constitutions of a film thickness estimation apparatus. It is a figure which shows the example of an influence range. It is a figure which shows the example which the surrounding layout has influenced. It is a figure for demonstrating the relationship between a plating shape and a surface area. It is a figure which shows the function structural example of a film thickness prediction apparatus. It is a figure for demonstrating the data structural example of the mesh data and influence range information in a present Example. It is a figure which shows the example of a prediction result of the copper plating height by a plating height estimation part. It is the figure which showed the example of correction | amendment of the height of the copper plating by a height correction part. It is a flowchart for demonstrating a film thickness prediction process.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a manufacturing process procedure of an LSI that is a semiconductor device will be described. FIG. 1 is an explanatory diagram showing an outline of an LSI manufacturing process procedure. As shown in FIG. 1A, when manufacturing an LSI, first, a wiring pattern 3 is formed on an oxide film 2 formed on the surface of a substrate 1 by irradiating light through a photomask. .

  The photomask is a wiring pattern 3 of a semiconductor circuit drawn on a transparent glass substrate with a material that does not transmit light. By irradiating the oxide film 2 with ultraviolet rays through this photomask, the wiring pattern 3 of the semiconductor circuit can be transferred.

  Next, as shown in FIG. 1B, the wiring groove 5g is formed by etching the oxide film 2 to which the wiring pattern 3 has been transferred. Etching refers to processing the shape of the oxide film 2 and the like on the substrate 1 using a chemical reaction (corrosive action) of chemicals or ions. The wiring groove 5g is a groove for forming a wiring of a semiconductor circuit. As the wiring material, copper, aluminum or the like having high electrical conductivity is used.

  And as shown in FIG.1 (C), the copper plating 4 is produced | generated on the oxide film 2 by performing electroplating (ECP: Electrochemical Plating). Here, the plating is generated using copper as an example, but the plating may be generated using aluminum or the like. The electroplating means that metal ions are reduced by an electrolysis reaction and the metal is deposited on the surface of the cathode conductive material.

  Next, excess copper is removed from the produced copper plating 4 by CMP (Chemical Mechanical Planarization). CMP is to flatten the uneven surface on the surface of the substrate 1 such as a semiconductor device by mechanically cutting with a chemical abrasive or a pad.

  Then, as shown in FIG. 1E, after the polishing is completed, an oxide film 2 is further formed on the oxide film 2 on which the wiring is formed. Further, in the case of performing multi-layer wiring, the above-described series of processing (FIGS. 1A to 1E) is repeated for a lower layer to form a semiconductor circuit in a single substrate 1 in a multi-layer manner. Can be formed on top.

  In the LSI manufacturing process described here, it is an important process to appropriately planarize the surface of the substrate 1 by polishing the surface of the substrate 1 by CMP (FIG. 1D). This is because, for example, when the surface of the substrate 1 is not properly flattened, the wirings formed on the substrate 1 are in contact with each other, or the pins of the wiring pattern 3 are not aligned with the unevenness on the surface of the substrate 1. This causes a problem of yield reduction.

  FIG. 2 is a diagram for explaining variations in wiring due to polishing. In FIG. 2, the substrate 1 shown in FIG. 1 is omitted, and is similarly omitted in the following drawings. FIG. 2A shows an example of the LSI 5 manufactured by the manufacturing process described in FIG. A cross section of the AA portion of the LSI 5 is shown in FIGS. 2 (B) and 2 (C).

  FIG. 2B shows an example of remaining copper and excessive shaving. The copper residue 6a is a copper plating 4 portion that remains even after polishing by CMP. The copper residue 6a causes a wiring short. Further, if the height of the copper plating 4 is excessively cut by polishing by CMP and the copper plating 4 is excessively cut 6b and the wiring resistance becomes too large, the circuit performance may be deteriorated.

  FIG. 2C shows an example in which the wiring width varies in the wiring portion 6c due to the shift of the CMP focus due to the height difference due to the copper plating 4. FIG.

  FIG. 3 is a diagram for explaining a difference in polishing result due to a difference in height of copper plating. FIG. 3A shows an example of the polishing result when the height difference 7H is large on the uneven surface of the deposited copper plating 4. In the polishing result in such a case, for example, an uncut portion 7e of the copper plating 4 may occur.

  FIG. 3B shows an example of the polishing result when the height difference 7L is small on the uneven surface of the deposited copper plating 4. In the polishing result in such a case, for example, an uncut portion 7e of the copper plating 4 may occur.

  As described with reference to FIGS. 3A and 3B, the plating shape greatly affects the polishing result by CMP.

  The deposition amount of the copper plating 4 is affected by the surrounding layout, and the plating deposition amount changes. The surrounding layout is the amount of surface area of the surrounding copper plating 4. In this embodiment, the average surface area of the surrounding copper plating 4 is considered as the surrounding layout, and the plating deposition amount is predicted in consideration of the average surface area of the surrounding copper plating 4.

  The film thickness prediction apparatus 100 of the present embodiment has a hardware configuration as shown in FIG. FIG. 4 is a diagram illustrating a hardware configuration of the film thickness prediction apparatus. In FIG. 4, a film thickness predicting apparatus 100 is an information processing apparatus controlled by a computer, and includes a CPU (Central Processing Unit) 11, a main storage device 12, an auxiliary storage device 13, an input device 14, and a display. The device 15 has a communication I / F (interface) 17 and a drive device 18, and is connected to the bus B.

  The CPU 11 corresponds to a processor that controls the film thickness prediction apparatus 100 in accordance with a program stored in the main storage device 12. The main storage device 12 uses a RAM (Random Access Memory), a ROM (Read Only Memory) or the like, and is obtained by a program executed by the CPU 11, data necessary for processing by the CPU 11, and processing by the CPU 11. Store or temporarily store the data.

  The auxiliary storage device 13 uses an HDD (Hard Disk Drive) or the like, and stores data such as programs for executing various processes. A part of the program stored in the auxiliary storage device 13 is loaded into the main storage device 12 and executed by the CPU 11, whereby various processes are realized. The main storage device 12 and / or the auxiliary storage device 13 correspond to the storage unit 130.

The input device 14 includes a mouse, a keyboard, and the like, and is used by the user to input various information necessary for processing by the film thickness prediction device 100. The display device 15 displays various information required under the control of the CPU 11. The input device 14 and the display device 15 may be a user interface such as an integrated touch panel. The communication I / F 17 performs communication through a wired or wireless network. Communication by the communication I / F 17 is not limited to wireless or wired.
A program that realizes processing performed by the film thickness prediction apparatus 100 is provided to the film thickness prediction apparatus 100 by a storage medium 19 such as a CD-ROM (Compact Disc Read-Only Memory).

  The drive device 18 performs an interface between the storage medium 19 (for example, a CD-ROM) set in the drive device 18 and the film thickness prediction device 100.

  Further, the storage medium 19 stores a program that realizes various processes according to the present embodiment described later, and the program stored in the storage medium 19 is stored in the film thickness prediction apparatus 100 via the drive device 18. Installed. The installed program can be executed by the film thickness prediction apparatus 100.

  The storage medium 19 for storing the program is not limited to a CD-ROM, but one or more non-transitory tangible media having a structure that can be read by a computer. If it is. As a computer-readable storage medium, in addition to a CD-ROM, a portable recording medium such as a DVD disk or a USB memory, or a semiconductor memory such as a flash memory may be used.

  First, it will be described that the plating deposition amount is affected by the surrounding layout. FIG. 5 is a diagram illustrating an example of the influence range. FIG. 5 shows an example in which the predetermined radius range is set as the influence range 8r for the target mesh 8t for which the height of the copper plating 4 is predicted.

  A. When the surface area of the copper plating 4 on the target mesh 8t is large and the average area of the influence range 8r is small with respect to the target mesh 8t, the amount of copper deposited on the target mesh 8t increases, and the height of the copper plating 4 increases. Get higher.

  B. When the surface area of the target mesh 8t is small and the average surface area of the influence range 8r is large, the amount of copper deposited on the target mesh 8t decreases and the height of the copper plating 4 decreases. This is a range in which the mesh within the influence range 8r is considered.

  6 and FIG. And B. Will be described. FIG. 6 is a diagram illustrating an example in which the surrounding layout has an influence. FIG. 6A shows the LSI 5 after wiring. FIG. 6B shows a cross-sectional view taken along the line AA of the LSI 5 after the copper plating 4 shown in FIG.

  In the cross-sectional view after plating shown in FIG. 6B, the deposited portion 5p of the copper plating 4 shows a shape influenced by the surrounding layout. In the central portion of the deposited portion 5p, the upper surface is not flat but recessed. Further, the amount of the copper plating 4 deposited on the side surface of the central portion is small.

  FIG. 7 is a diagram for explaining the relationship between the plating shape and the surface area. The state a, the state b, and the state c will be described with reference to the deposited portion 5p of the copper plating 4 shown in FIG.

  In the state a, since the surface area of the copper plating 4 of the target mesh 8t_1 is small and the average surface of the influence range 8r is smaller than that of the target mesh 8t_1, the copper plating 4 is deposited higher than predicted.

  In the state b, the state is the same as the state a, but the average surface area of the influence range 8r is the same as the surface area of the target mesh 8t_2, and therefore, the deposition amount of the copper plating 4 is lower than that in the state a.

  In the state c, since the surface area of the target mesh 8t_3 is small and the average surface area of the influence range 8r is larger than that of the target mesh 8t_3, the copper plating 4 is deposited lower than expected.

  In the film thickness prediction apparatus 100 according to the present embodiment, the height of the surface area of the copper plating 4 of the target mesh 8t is corrected based on the average surface area of the influence range 8r. A functional configuration example of such a film thickness prediction apparatus 100 will be described with reference to FIG.

  FIG. 8 is a diagram illustrating a functional configuration example of the film thickness prediction apparatus. In FIG. 8, the film thickness prediction apparatus 100 corresponds to a simulation apparatus that predicts the film thickness of the copper plating 4, and includes a mesh data extraction unit 41, a mesh height prediction unit 42, an average surface area calculation unit 43, and a height. And a correction unit 44. The mesh data extraction unit 41, the mesh height prediction unit 42, the average surface area calculation unit 43, and the height correction unit 44 correspond to a processing unit realized by the CPU 11 executing a corresponding program.

  The storage unit 130 includes chip data 51, mesh data 52, influence range information 53, a correction model 54, plating height information 55, and the like.

  The mesh data extraction unit 41 extracts wiring information of each mesh from the chip data 51. The mesh data 52 extracted from the chip data 51 and indicating the copper density, the edge length, etc. for each mesh is stored in the storage unit 130.

  The mesh height prediction unit 42 predicts the surface area of the copper plating 4 and the height of the copper plating 4 for each mesh 5 m. The predicted height value of the copper plating 4 is stored in the mesh data 52. The average surface area calculation unit 43 uses the influence range information 53 to calculate the average surface area of the copper plating 4 around the mesh 5 m. The calculated average surface area is stored in the mesh data 52.

  The height correction unit 44 refers to the mesh data 52 and corrects the height of the copper plating 4 using the correction model 54 to obtain the height of the copper plating 4. For all the meshes, processing by the mesh height predicting unit 42, the average surface area calculating unit 43, and the height correcting unit 44 is performed, and the corrected plating height indicating the height of the copper plating 4 of each mesh is determined. It is stored in the mesh data 52.

  The chip data 51 is a data file describing a mask pattern, for example, a data file in GDSII format. The mesh data 52 and the influence range information 53 will be described in detail with reference to FIG.

  FIG. 9 is a diagram for explaining a data configuration example of mesh data and influence range information in the present embodiment.

  As shown in FIG. 9A, the plating height predicting unit 42 divides the LSI 5 into rectangles of mesh 5 m in order to predict the film thickness. The size of each mesh 5 m is approximately 10 μm to 40 μm.

  In FIG. 9B, mesh data 52 stores values such as copper density, edge length, surface area, surrounding average surface area, plating height, corrected plating height, etc. for each mesh 5 m of each layer.

  The copper density indicates the copper density (%) including the dummy metal, and the edge length indicates the length (μm) of the wiring in the mesh 5 m. The surface area indicates a value calculated based on the edge length 9f.

  The plating height indicates the height of the copper plating 4 predicted using an existing model. The corrected plating height indicates a value obtained by correcting the plating height with reference to the average height of the copper plating 4 of the surrounding mesh 5 m in this embodiment.

  In FIG. 9C, the influence range information 53 indicates the length of the radius of the influence range 8r centered on the target mesh 8t (FIG. 5).

  Next, a processing example for the deposited portion 5p (FIG. 6B) will be described with reference to FIGS. FIG. 10 is a diagram illustrating an example of a prediction result of the copper plating height by the plating height prediction unit.

  FIG. 10A shows an example of a prediction result of the plating height prediction unit 42 for the deposition portion 5p. In this prediction result example, the height of the copper plating 4 is predicted uniformly and flat in the portions 4a and 4b where the surface areas of the left and right wirings are small. Similarly, the height of the copper plating 4 is predicted to be flat in the portion 4c where the surface area of the wiring between the portions 4a and 4b is large.

  FIG. 10B shows a laminated state of the copper plating 4 for each mesh 5 m by enlarging the portion 101 where the portion 4a having a small surface area and the portion 4c having a large surface area shown in FIG. 10A are adjacent to each other. When the electroplating is performed, the wiring groove 5g expands or contracts depending on the surface area of the wiring groove 5g. Due to the expansion and contraction of the wiring groove 5g, irregularities are generated on the surface of the copper plating 4 formed on the wiring groove 5g.

  In FIG. 10B, the portion 4a having a small surface area has a large surface area of the wiring groove 5g, and the wiring groove 5g easily expands. As shown in FIG. 10C, the prediction result for each mesh 5m is that the height of the copper plating 4 on the oxide film 2 where the wiring groove 5g is not formed is Hc, and the oxide film 2 where the wiring groove 5g is formed. The upper copper plating 4 indicates that a recess having a height hc is formed.

  In all the meshes 5m of the portion 4a having a small surface area in FIG. 10B, the height of the copper plating 4 is uniformly Hc on the oxide film 2 where the wiring grooves 5g are not formed, and the wiring grooves 5g are formed. It is shown that a recess having a height hc is formed on the oxide film 2.

  In FIG. 10B, the portion 4c having a large surface area has a small surface area of the wiring groove 5g, and the wiring groove 5g easily contracts. As shown in FIG. 10D, the prediction result in each mesh 5m is that the height of the copper plating 4 on the oxide film 2 where the wiring groove 5g is not formed is Hd, and the oxide film 2 where the wiring groove 5g is formed. The upper copper plating 4 indicates that a convex portion having a height hd is further formed.

  In all meshes 5m of the portion 4c having a large surface area in FIG. 10B, the height of the copper plating 4 is uniformly Hd on the oxide film 2 where the wiring groove 5g is not formed, and the wiring groove 5g is formed. It is shown that a recess having a height hd is formed on the oxide film 2.

  In the present embodiment, for the prediction results as shown in FIG. 10, the copper plating 4 is performed by the height correction unit 44 on the basis of the average surface area around the surface obtained by the average surface area calculation unit 43 for every 5 m of mesh. Correct the height.

  FIG. 11 is a diagram illustrating an example of a correction result of the height of the copper plating by the height correction unit. In FIG. 11, the correction value obtained by the height correction unit 44 is represented by f (α).

  The smaller the surface area of the wiring groove 5g, the lower the height of the stacked oxide film 2 due to the expansion of the wiring groove 5g. Further, the larger the surface area of the wiring groove 5g, the higher the height of the stacked oxide film 2 due to the shrinkage of the wiring groove 5g.

  In this example, by taking into account the average surface area of the copper plating 4 of the surrounding mesh 5 m using f (α), the difference indicating the change in the height of the oxide film 2 due to the expansion or contraction of the wiring groove 5 g is obtained. Adjust the height of the copper plating 4.

  FIG. 11A shows the height after correction of the copper plating 4 for each mesh 5m of the portion 4a having a small surface area of the deposited portion 5p. In the mesh 5m_a1 adjacent to the portion 4c having a large surface area, the value obtained by f (α) is subtracted from the height Hc (FIG. 10C) of the copper plating 4 obtained by the plating height prediction unit 42. Thus, the height of the copper plating 4 is Ha1. The height of the concave portion of the copper plating 4 formed on the wiring groove 5g indicates hc, which is the same as FIG.

  Similarly, in the mesh 5m_a2, the height of the copper plating 4 is corrected from the value Hc to indicate Ha2. The height hc of the recess is the same. In this way, the height of each copper plating 4 is corrected for each mesh 5m in the portion 4a where the surface area of the wiring groove 5g is small.

  FIG. 11B shows the height after correction of the copper plating 4 for each mesh 5 m of the portion 4 c where the surface area of the deposited portion 5 p is large. In the mesh 5m_b1 adjacent to the portion 4a having a small surface area, the value obtained by f (α) is subtracted from the height Hd (FIG. 10C) of the copper plating 4 obtained by the plating height prediction unit 42. Thus, the height of the copper plating 4 is Hb1. The height of the concave portion of the copper plating 4 formed on the wiring groove 5g indicates hd, which is the same as in FIG.

  Similarly, in the mesh 5m_a2, the height of the copper plating 4 is corrected from the value Hd to indicate Hb2. The height hd of the recess is the same. In this way, the height of each copper plating 4 is corrected for each mesh 5m in the portion 4a where the surface area of the wiring groove 5g is small.

  FIG. 11C shows the wiring of the surrounding mesh 5m for each of the plurality of meshes 5m including 5m_a1, 5m_a2, 5m_b1, and 5m_b2 in the portion 102 where the portions 4a and 4c are adjacent to each other in the deposited portion 5p. The state where the height of the copper plating 4 is corrected based on the average surface area of the groove 5g is shown.

  In FIG. 11C, the height of the copper plating 4 is not shown uniformly in the portion 4a and the portion 4c of the deposited portion 5p. In particular, the characteristic deposition shape of the copper plating 4 is represented at the boundary between the portion 4a and the portion 4c. In the portion 4a and the portion 4b adjacent to the portion 4c, the height of the copper plating 4 rapidly decreases. On the other hand, at both ends of the portion 4c adjacent to the portion 4a and the portion 4b, the copper plating 4 is formed from the center of the portion 4c. The height is high.

  By correcting the height of the copper plating 4 in the present embodiment, it is possible to accurately represent the tendency of the copper plating 4 to decrease adjacent to and in the vicinity of the portion 4c having the small surface area 4a and the portion 4b. Moreover, the recessed part where the copper plating 4 becomes higher than the center part of the part 4c in the edge part of the part 4c can be expressed.

  Next, the film thickness prediction process performed by the film thickness prediction apparatus 100 will be described. FIG. 12 is a flowchart for explaining the film thickness prediction process. In FIG. 12, the mesh data processing unit 41 of the film thickness prediction apparatus 100 extracts the wiring information of each mesh 5m for all layers, and stores the mesh data 52 in the storage unit 130 (step S80). In the film thickness prediction process, one layer is selected (step S81), and the process by the plating height prediction unit 42 is performed.

  The plating height prediction unit 42 calculates the surface area and the plating height of the copper plating 4 of each mesh 5 m based on the edge length (step S82). The calculated surface area and plating height are stored in the mesh data 52 for each mesh 5 m of each layer.

  Then, the average surface area calculation unit 43 sets each mesh 5m as the target mesh 8t, and calculates the average surface area of the plurality of meshes 5m within the radius influence range 8r indicated by the influence range information 53 from the center of the target mesh 8t (step S83). The surface area value of each mesh 5 m included in the influence range 8 r is obtained by referring to the mesh data 52. By summing the obtained surface area values and dividing by the number of meshes 5m included in the influence range 8r, the average surface area can be obtained. The calculated average surface area is stored in the mesh data 52.

Next, the height correction unit 44 extracts the target mesh 8t in which the average surface area of the surrounding mesh 5m is within the threshold range (step S84). The threshold range is a range from the first threshold corresponding to the minimum surface area where the wiring groove 5g contracts to the second threshold corresponding to the maximum surface area where the wiring groove 5g expands in the size of the mesh 5m. Therefore, the threshold range is
1st threshold value <average surface area <2nd threshold value (1)
It is represented by The corrected plating height is stored in the mesh data 52.

  The height correction unit 44 corrects the plating height of each extracted target mesh 8t (step S85). The correction model 54 for correcting the plating height is described as follows.

f (α) = (surface area−average surface area) × α (2)
In equation (2), α is a calibration parameter. The influence range information 53 (the radius of the influence range 8r) and the parameter of the height correction formula (2) are calibrated using the plating measurement result of the test chip prepared for each process.

  After the height correction, it is determined whether or not all layers have been completed (step S86). When there is an unprocessed layer (NO in step S86), the film thickness prediction process returns to step S81 and repeats the same process as described above. If all layers have been processed (YES in step S86), the film thickness prediction process ends.

  As described above, in this embodiment, the height of the copper plating 4 is predicted on the basis of the surface area of the copper plating 4 and the prediction is based on the average surface area of the surrounding copper plating 4 for every 5 m of the mesh dividing the LSI 5. By correcting the height of the copper plating 4, the accuracy of the film thickness prediction can be improved.

  The present invention is not limited to the specifically disclosed embodiments, and can be principally modified and changed without departing from the scope of the claims.

The following additional notes are further disclosed with respect to the embodiment including the above examples.
(Appendix 1)
For each mesh that divides the substrate into a plurality, predict the height of the thin film stacked on the substrate,
Calculate the average surface area of the thin film in a plurality of meshes around the target mesh that predicted the height,
A film thickness prediction program for causing a computer to perform a process of increasing and decreasing the height based on the calculated average surface area.
(Appendix 2)
In the computer,
The film thickness prediction program according to supplementary note 1, wherein a process of extracting the target mesh in which the surrounding average surface area is within a threshold range is performed.
(Appendix 3)
In the computer,
The difference between the surface area of the thin film in the target mesh and the average surface area of the thin film of the plurality of surrounding meshes is calculated, and the predicted height is increased or decreased by a value corresponding to the calculated difference. The program for predicting film thickness according to Supplementary Note 2.
(Appendix 4)
The film thickness prediction program according to any one of appendices 1 to 3, wherein the thin film is copper plating formed on an oxide film.
(Appendix 5)
For each mesh that divides the substrate into a plurality, predict the height of the thin film stacked on the substrate,
Calculate the average surface area of the thin film in a plurality of meshes around the target mesh that predicted the height,
A film thickness prediction method in which a computer performs processing for increasing and decreasing the height based on the calculated average surface area.
(Appendix 6)
A prediction unit that predicts the height of the thin film stacked on the substrate for each mesh obtained by dividing the substrate into a plurality of substrates,
A calculation unit that calculates an average surface area of the thin film in a plurality of meshes around a target mesh that predicts the height;
A simulation apparatus comprising: a correction unit that increases and decreases the height based on the calculated average surface area.

2 Oxide film 3 Wiring pattern 4 Copper plating 5 LSI
5g Wiring groove 5p Accumulated portion 8r Influence range 8t, 8t_1, 8t_2, 8t_3 Target mesh 9f Edge length 11 CPU
12 Main storage device 13 Auxiliary storage device 14 Input device 15 Display device 17 Communication I / F
DESCRIPTION OF SYMBOLS 18 Drive apparatus 19 Storage medium 41 Mesh data extraction part 42 Plating height estimation part 43 Average surface area calculation part 44 Height correction part 51 Chip data 52 Mesh data 53 Influence range information 54 Correction model 100 Film thickness prediction apparatus 101, 102 Adjacent Part 130 Storage unit B bus

Claims (5)

For each mesh that divides the substrate into a plurality, predict the height of the thin film stacked on the substrate,
Calculate the average surface area of the thin film in a plurality of meshes around the target mesh that predicted the height,
A film thickness prediction program for causing a computer to perform a process of increasing and decreasing the height based on the calculated average surface area. In the computer,
The film thickness prediction program according to claim 1, wherein a process of extracting the target mesh in which the surrounding average surface area is within a threshold range is performed. In the computer,
The difference between the surface area of the thin film in the target mesh and the average surface area of the thin film of the plurality of surrounding meshes is calculated, and the predicted height is increased or decreased by a value corresponding to the calculated difference. The film thickness prediction program according to claim 2. For each mesh that divides the substrate into a plurality, predict the height of the thin film stacked on the substrate,
Calculate the average surface area of the thin film in a plurality of meshes around the target mesh that predicted the height,
A film thickness prediction method in which a computer performs processing for increasing and decreasing the height based on the calculated average surface area. A prediction unit that predicts the height of the thin film stacked on the substrate for each mesh obtained by dividing the substrate into a plurality of substrates,
A calculation unit that calculates an average surface area of the thin film in a plurality of meshes around a target mesh that predicts the height;
A simulation apparatus comprising: a correction unit that increases and decreases the height based on the calculated average surface area.

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