JP2017034282A5 - - Google Patents
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- JP2017034282A5 JP2017034282A5 JP2016214000A JP2016214000A JP2017034282A5 JP 2017034282 A5 JP2017034282 A5 JP 2017034282A5 JP 2016214000 A JP2016214000 A JP 2016214000A JP 2016214000 A JP2016214000 A JP 2016214000A JP 2017034282 A5 JP2017034282 A5 JP 2017034282A5
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- 238000006073 displacement reaction Methods 0.000 claims description 41
- 238000002844 melting Methods 0.000 claims description 30
- 238000005304 joining Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 20
- 230000001276 controlling effect Effects 0.000 claims description 17
- 230000000875 corresponding Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 4
- 210000001503 Joints Anatomy 0.000 claims 1
- 239000007790 solid phase Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 1
Description
請求項３の発明は、請求項１の発明に係る接合システムにおいて、前記制御手段は、前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続し、前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離を低減させることを特徴とする。
請求項４の発明は、請求項１の発明に係る接合システムにおいて、前記制御手段は、前記第１の温度から前記第２の温度にまでさらに昇温し前記バンプ電極を溶融させた状態で加熱処理を継続する期間において、前記２つの保持手段の相互間距離を維持しつつ前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離を低減させることを特徴とする。
請求項５の発明は、請求項１ないし請求項４のいずれかの発明に係る接合システムにおいて、ａ）前記第１の被接合物の接合表面に設けられたバンプ電極を前記第１の温度にまで昇温する処理と、ｂ）前記バンプ電極を前記第１の温度まで昇温した状態で、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させる処理と、ｃ）前記２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での前記変位量の値を前記変位量の基準値として検出する処理と、ｄ）前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合する処理と、を前記２つの被接合物に関して実行した後に、前記２つの被接合物とは別の２つの被接合物に関して前記処理ａ），ｂ），ｃ），ｄ）をさらに実行することを特徴とする。
The invention according to claim 3, Te bonding system odor according to the invention of claim 1, prior Symbol control unit continues the heating while further heated up to the first said the temperature of the second temperature, The distance between the two objects to be joined is reduced by thermal expansion of at least one of the first holding means and the second holding means.
According to a fourth aspect of the present invention, in the joining system according to the first aspect of the present invention, the control means further heats the bump electrode from the first temperature to the second temperature and heats the bump electrode. The distance between the two objects to be joined by the thermal expansion of at least one of the first holding means and the second holding means while maintaining the distance between the two holding means in a period during which the processing is continued. It is characterized by reducing.
According to a fifth aspect of the present invention, in the bonding system according to any one of the first to fourth aspects of the present invention, a) a bump electrode provided on a bonding surface of the first object to be bonded is set to the first temperature. And b) in a state where the bump electrode is heated to the first temperature, the two objects to be joined that are separated in a predetermined direction are relatively approached in the predetermined direction, A process of bringing a bump electrode into contact with the second object in a solid phase; and c) a displacement amount corresponding to a distance between the two holding means, and the displacement amount at the time of contact of the bump electrode. A process of detecting the value of the displacement as a reference value of the displacement amount, and d) controlling the distance between the two holding means by controlling the displacement amount relative to the reference value, and the melting point. The bar up to the second temperature which is the above temperature. A process of melting the bump electrode by further raising the temperature of the first electrode from the first temperature and bonding the two objects to be bonded by the bump electrode, with respect to the two objects to be bonded; The processes a), b), c), and d) are further performed on two objects to be bonded different from the two objects to be bonded.
請求項６の発明は、接合システムであって、接合対象の２つの被接合物のうちの一方の被接合物である第１の被接合物を保持する第１の保持手段と、前記２つの被接合物のうちの他方の被接合物である第２の被接合物を保持する第２の保持手段と、前記第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温する加熱手段と、前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の保持手段と前記第２の保持手段との相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させる駆動手段と、前記バンプ電極が前記第２の被接合物に接触したことを検出する接触検知手段と、前記２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での前記変位量の値を前記変位量の基準値として検出する変位量検出手段と、前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合する制御手段と、を備え、前記制御手段は、前記第１の保持手段と前記第２の保持手段と前記第１の被接合物と前記第２の被接合物とのうちの少なくとも１つの熱膨張量と前記バンプ電極の温度との対応関係であって事前測定によって得られた当該対応関係に基づいて、前記バンプ電極の温度が前記第１の温度から前記第２の温度へと変化する際における前記第１の被接合物と前記第２の被接合物との間の相互間距離の変化量であって熱膨張に起因する変化量を推定し、前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続する際に前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離が低減されたとしても前記バンプ電極が潰れ過ぎない旨が前記変化量に基づいて推定される場合、前記２つの保持手段の相互間距離に応じた前記変位量を前記基準値に維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うことを特徴とする。 Invention of Claim 6 is a joining system, Comprising: The 1st holding means which hold | maintains the 1st to-be-joined object which is one to-be-joined object of two to-be-joined objects to be joined, and said two A second holding means for holding a second object to be bonded, which is the other object to be bonded, and a bump electrode provided on the bonding surface of the first object to be bonded are connected to the bump electrode. Heating means for raising the temperature to a first temperature that is lower than the melting point; and the first holding means and the second holding means in a state where the bump electrode is heated to the first temperature. The two objects to be bonded that have been separated in a predetermined direction are moved closer to each other in the predetermined direction, and the bump electrode is brought into contact with the second object to be bonded in a solid state. A driving means for detecting that the bump electrode is in contact with the second object to be joined. And a displacement amount detecting means for detecting a displacement amount corresponding to a distance between the two holding means as a reference value of the displacement amount. And controlling the distance between the two holding means by controlling the amount of displacement relative to the reference value, and the bump electrode to a second temperature that is equal to or higher than the melting point. Control means for melting the bump electrode by further raising the temperature from the first temperature and joining the two objects to be joined by the bump electrode, and the control means comprises the first holding means. , The second holding means, the first object to be bonded, and the second object to be bonded, and corresponding to the temperature of the bump electrode and obtained by prior measurement. The corresponding relationship Based on this, a change in the distance between the first object to be bonded and the second object to be bonded when the temperature of the bump electrode changes from the first temperature to the second temperature. When the heat treatment is continued in a state where the temperature is further increased from the first temperature to the second temperature, and the first holding means and the first When it is estimated based on the amount of change that the bump electrodes are not crushed even if the distance between the two objects to be bonded is reduced by the thermal expansion of at least one of the two holding means, A heat treatment is performed in a state in which the bump electrodes are melted while the displacement amount corresponding to the distance between the holding means is maintained at the reference value.
請求項７の発明は、接合方法であって、ａ）接合対象の２つの被接合物のうちの第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温するステップと、ｂ）前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の被接合物を保持する第１の保持手段と第２の被接合物を保持する第２の保持手段との２つの保持手段の相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させるステップと、ｃ）前記バンプ電極が前記第２の被接合物に接触したことを検出するとともに、前記第１の保持手段と前記第２の保持手段との２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での当該変位量の値を当該変位量に関する基準値として検出するステップと、ｄ）前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合するステップと、を備え、前記第１の温度は、前記バンプ電極の融点よりも低い温度であり且つ前記バンプ電極の融点の１０℃以内の温度であることを特徴とする。 The invention of claim 7 is a bonding method, wherein a) a bump electrode provided on a bonding surface of a first object to be bonded of two objects to be bonded is lower than a melting point of the bump electrode. A step of raising the temperature to a first temperature which is a temperature; b) a first holding means for holding the first object to be joined in a state where the bump electrode is heated to the first temperature; By changing the distance between the two holding means and the second holding means for holding the two objects to be bonded, the two objects to be bonded that are separated in the predetermined direction are relatively approached in the predetermined direction. And a step of bringing the bump electrode into contact with the second workpiece in a solid phase; and c) detecting that the bump electrode is in contact with the second workpiece and detecting the first holding. Depending on the distance between the two holding means of the means and the second holding means. Detecting a value of the displacement amount at the time of contact of the bump electrode as a reference value relating to the displacement amount; and d) controlling the displacement amount relative to the reference value. The bump electrode is melted by further increasing the temperature of the bump electrode from the first temperature to a second temperature that is equal to or higher than the melting point while controlling the distance between the two holding means. Bonding the two objects to be joined by the bump electrode, wherein the first temperature is lower than the melting point of the bump electrode and is within 10 ° C. of the melting point of the bump electrode. It is characterized by being.
請求項８の発明は、請求項７の発明に係る接合方法において、前記ステップｄ）は、ｄ−１）前記２つの保持手段の相互間距離を維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うステップ、を有することを特徴とする。 An eighth aspect of the present invention is the bonding method according to the seventh aspect of the present invention, wherein the step d) includes d-1) a state in which the bump electrodes are melted while maintaining a distance between the two holding means. And a step of performing a heat treatment at.
請求項９の発明は、請求項７の発明に係る接合方法において、前記第２の温度は、前記融点よりも高い温度であり、前記ステップｄ）は、ｄ−２）前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続することによって、前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離をさらに低減させるステップ、を有することを特徴とする。
請求項１０の発明は、請求項７の発明に係る接合方法において、前記ステップｄ）は、ｄ−３）前記第１の温度から前記第２の温度にまでさらに昇温し前記バンプ電極を溶融させた状態で加熱処理を継続する期間において、前記２つの保持手段の相互間距離を維持しつつ前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離を低減させるステップ、を有することを特徴とする。
請求項１１の発明は、請求項７ないし請求項１０のいずれかの発明に係る接合方法において、ｅ）前記２つの被接合物に関して前記ステップａ），ｂ），ｃ），ｄ）を実行した後に、前記２つの被接合物とは別の２つの被接合物に関して前記ステップａ），ｂ），ｃ），ｄ）をさらに実行するステップ、をさらに備えることを特徴とする。
According to a ninth aspect of the present invention, in the bonding method according to the seventh aspect of the invention, the second temperature is a temperature higher than the melting point, and the step d) is performed from d-2) the first temperature. By continuing the heat treatment while the temperature is further increased to the second temperature, the thermal expansion of at least one of the first holding means and the second holding means causes the two objects to be joined to each other. Further reducing the distance.
According to a tenth aspect of the present invention, in the bonding method according to the seventh aspect, the step d) includes d-3) further increasing the temperature from the first temperature to the second temperature to melt the bump electrode. In the period in which the heat treatment is continued in a state in which the two holding means are maintained, the two held members are bonded to each other by thermal expansion of at least one of the first holding means and the second holding means while maintaining the distance between the two holding means. Reducing the distance between objects.
The invention of claim 11 is the joining method according to any one of claims 7 to 10, wherein e) the steps a), b), c) and d) are performed on the two objects to be joined. The method further includes the step of further executing the steps a), b), c), and d) with respect to two objects to be bonded different from the two objects to be bonded.
請求項１２の発明は、接合方法であって、ａ）接合対象の２つの被接合物のうちの第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温するステップと、ｂ）前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の被接合物を保持する第１の保持手段と第２の被接合物を保持する第２の保持手段との２つの保持手段の相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させるステップと、ｃ）前記バンプ電極が前記第２の被接合物に接触したことを検出するとともに、前記第１の保持手段と前記第２の保持手段との２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での当該変位量の値を当該変位量に関する基準値として検出するステップと、ｄ）前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合するステップと、を備え、前記ステップｄ）は、ｄ−１）前記第１の保持手段と前記第２の保持手段と前記第１の被接合物と前記第２の被接合物とのうちの少なくとも１つの熱膨張量と前記バンプ電極の温度との対応関係であって事前測定によって得られた当該対応関係に基づいて、前記バンプ電極の温度が前記第１の温度から前記第２の温度へと変化する際における前記第１の被接合物と前記第２の被接合物との間の相互間距離の変化量であって熱膨張に起因する変化量を推定するステップと、ｄ−２）前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続する際に前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離が低減されたとしても前記バンプ電極が潰れ過ぎない旨が前記変化量に基づいて推定される場合、前記２つの保持手段の相互間距離に応じた前記変位量を前記基準値に維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うステップと、を有することを特徴とする。 The invention of claim 12 is a bonding method, wherein a) a bump electrode provided on a bonding surface of a first object to be bonded is lower than a melting point of the bump electrode. A step of raising the temperature to a first temperature which is a temperature; b) a first holding means for holding the first object to be joined in a state where the bump electrode is heated to the first temperature; By changing the distance between the two holding means and the second holding means for holding the two objects to be bonded, the two objects to be bonded that are separated in the predetermined direction are relatively approached in the predetermined direction. And a step of bringing the bump electrode into contact with the second workpiece in a solid phase; and c) detecting that the bump electrode is in contact with the second workpiece and detecting the first holding. The distance between the two holding means of the means and the second holding means Detecting a value of the displacement amount at the time of contact of the bump electrode as a reference value for the displacement amount; and d) controlling the displacement amount relative to the reference value. Thus, while controlling the distance between the two holding means, the bump electrode is melted by further raising the bump electrode from the first temperature to a second temperature that is equal to or higher than the melting point. And bonding the two objects to be bonded by the bump electrodes, wherein the step d) includes d-1) the first holding means, the second holding means, and the first object. Based on the correspondence relationship between the amount of thermal expansion of at least one of the joined object and the second object to be joined and the temperature of the bump electrode and obtained by the preliminary measurement, the bump electrode Temperature is before The amount of change in the distance between the first object and the second object when changing from the first temperature to the second temperature, which is caused by thermal expansion A step of estimating the amount; d-2) the first holding means and the second holding means when continuing the heat treatment in a state where the temperature is further raised from the first temperature to the second temperature. If it is estimated based on the amount of change that the bump electrodes are not crushed even if the distance between the two objects to be bonded is reduced by the thermal expansion of at least one of the two holding means, And a step of performing a heat treatment in a state where the bump electrodes are melted while maintaining the amount of displacement according to the distance to the reference value .
請求項１３の発明は、半導体デバイスの製造方法であって、請求項７ないし請求項１２のいずれかの発明に係る接合方法を用いて前記２つの被接合物を接合するステップを備えることを特徴とする。 A thirteenth aspect of the present invention is a method for manufacturing a semiconductor device, comprising the step of bonding the two objects to be bonded using the bonding method according to any of the seventh to twelfth aspects of the present invention. And
請求項１ないし請求項１２に記載の発明によれば、２つの被接合物をバンプ電極を介して接合するに際して、当該２つの被接合物の相互間の距離を適切に制御することが可能である。 According to the first to twelfth aspects of the present invention, when two objects to be bonded are bonded via the bump electrodes, it is possible to appropriately control the distance between the two objects to be bonded. is there.
また特に、請求項３および請求項９に記載の発明によれば、溶融状態のバンプ電極の合金化を促進することが可能である。 In particular, according to the inventions of claims 3 and 9 , it is possible to promote alloying of the bump electrode in the molten state.
また、請求項１３に記載の発明によれば、その２つの被接合物の相互間の距離が適切に制御されて接合された半導体デバイスを得ることが可能である。
According to the invention described in claim 13 , it is possible to obtain a semiconductor device bonded by appropriately controlling the distance between the two objects to be bonded.
Claims (13)
接合対象の２つの被接合物のうちの一方の被接合物である第１の被接合物を保持する第１の保持手段と、
前記２つの被接合物のうちの他方の被接合物である第２の被接合物を保持する第２の保持手段と、
前記第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温する加熱手段と、
前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の保持手段と前記第２の保持手段との相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させる駆動手段と、
前記バンプ電極が前記第２の被接合物に接触したことを検出する接触検知手段と、
前記２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での前記変位量の値を前記変位量の基準値として検出する変位量検出手段と、
前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合する制御手段と、
を備え、
前記第１の温度は、前記バンプ電極の融点よりも低い温度であり且つ前記バンプ電極の融点の１０℃以内の温度であることを特徴とする接合システム。 A joining system,
A first holding means for holding a first object to be bonded, which is one of the two objects to be bonded;
A second holding means for holding a second workpiece which is the other of the two workpieces;
Heating means for raising the temperature of the bump electrode provided on the bonding surface of the first object to be bonded to a first temperature that is lower than the melting point of the bump electrode;
With the bump electrode heated to the first temperature, the distance between the first holding means and the second holding means is changed to change the two covered objects separated in a predetermined direction. Driving means for bringing a bonded object relatively closer in the predetermined direction and bringing the bump electrode into contact with the second bonded object in a solid state;
Contact detection means for detecting that the bump electrode is in contact with the second workpiece;
A displacement amount detection means for detecting a displacement amount according to a distance between the two holding means and the displacement amount value at the time of contact of the bump electrode as a reference value of the displacement amount;
By controlling the displacement amount relative to the reference value, the distance between the two holding means is controlled, and the bump electrode is moved to a second temperature that is equal to or higher than the melting point. Control means for melting the bump electrode by further raising the temperature from the temperature of 1, and joining the two objects to be joined by the bump electrode;
With
The bonding system according to claim 1, wherein the first temperature is lower than the melting point of the bump electrode and is within 10 ° C. of the melting point of the bump electrode.
前記制御手段は、前記２つの保持手段の相互間距離を維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うことを特徴とする接合システム。 The joining system according to claim 1,
The said control means performs the heat processing in the state which fuse | melted the said bump electrode, maintaining the mutual distance of the said 2 holding means, The joining system characterized by the above-mentioned.
前記制御手段は、前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続し、前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離を低減させることを特徴とする接合システム。 The joining system according to claim 1,
Before SL control unit continues the heating while further heated up to the first said the temperature of the second temperature, at least one of thermal expansion of said first holding means and said second holding means To reduce the distance between the two objects to be joined.
前記制御手段は、前記第１の温度から前記第２の温度にまでさらに昇温し前記バンプ電極を溶融させた状態で加熱処理を継続する期間において、前記２つの保持手段の相互間距離を維持しつつ前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離を低減させることを特徴とする接合システム。 The control means maintains a distance between the two holding means in a period in which the heating process is continued while the bump electrode is melted by further increasing the temperature from the first temperature to the second temperature. However, the distance between the two objects to be joined is reduced by thermal expansion of at least one of the first holding means and the second holding means.
ａ）前記第１の被接合物の接合表面に設けられたバンプ電極を前記第１の温度にまで昇温する処理と、
ｂ）前記バンプ電極を前記第１の温度まで昇温した状態で、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させる処理と、
ｃ）前記２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での前記変位量の値を前記変位量の基準値として検出する処理と、
ｄ）前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合する処理と、
を前記２つの被接合物に関して実行した後に、前記２つの被接合物とは別の２つの被接合物に関して前記処理ａ），ｂ），ｃ），ｄ）をさらに実行することを特徴とする接合システム。 The joining system according to any one of claims 1 to 4 ,
a) a process of raising the bump electrode provided on the bonding surface of the first object to the first temperature to the first temperature;
b) With the bump electrode heated to the first temperature, the two objects to be joined that have been separated in a predetermined direction are relatively approached in the predetermined direction, and the bump electrode is in a solid state. Processing to contact the second object to be joined;
c) a process of detecting a displacement amount corresponding to a distance between the two holding means and the displacement amount value at the time of contact of the bump electrode as a reference value of the displacement amount;
d) controlling the distance between the two holding means by controlling the amount of displacement relative to the reference value, and moving the bump electrode to a second temperature that is equal to or higher than the melting point. A process of further melting the bump electrode by raising the temperature from the first temperature, and joining the two objects to be joined by the bump electrode;
After the process is executed on the two objects to be bonded, the processes a), b), c) and d) are further performed on two objects to be bonded different from the two objects to be bonded. Joining system.
接合対象の２つの被接合物のうちの一方の被接合物である第１の被接合物を保持する第１の保持手段と、
前記２つの被接合物のうちの他方の被接合物である第２の被接合物を保持する第２の保持手段と、
前記第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温する加熱手段と、
前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の保持手段と前記第２の保持手段との相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させる駆動手段と、
前記バンプ電極が前記第２の被接合物に接触したことを検出する接触検知手段と、
前記２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での前記変位量の値を前記変位量の基準値として検出する変位量検出手段と、
前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合する制御手段と、
を備え、
前記制御手段は、
前記第１の保持手段と前記第２の保持手段と前記第１の被接合物と前記第２の被接合物とのうちの少なくとも１つの熱膨張量と前記バンプ電極の温度との対応関係であって事前測定によって得られた当該対応関係に基づいて、前記バンプ電極の温度が前記第１の温度から前記第２の温度へと変化する際における前記第１の被接合物と前記第２の被接合物との間の相互間距離の変化量であって熱膨張に起因する変化量を推定し、
前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続する際に前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離が低減されたとしても前記バンプ電極が潰れ過ぎない旨が前記変化量に基づいて推定される場合、前記２つの保持手段の相互間距離に応じた前記変位量を前記基準値に維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うことを特徴とすることを特徴とする接合システム。 A joining system,
A first holding means for holding a first object to be bonded, which is one of the two objects to be bonded;
A second holding means for holding a second workpiece which is the other of the two workpieces;
Heating means for raising the temperature of the bump electrode provided on the bonding surface of the first object to be bonded to a first temperature that is lower than the melting point of the bump electrode;
With the bump electrode heated to the first temperature, the distance between the first holding means and the second holding means is changed to change the two covered objects separated in a predetermined direction. Driving means for bringing a bonded object relatively closer in the predetermined direction and bringing the bump electrode into contact with the second bonded object in a solid state;
Contact detection means for detecting that the bump electrode is in contact with the second workpiece;
A displacement amount detection means for detecting a displacement amount according to a distance between the two holding means and the displacement amount value at the time of contact of the bump electrode as a reference value of the displacement amount;
By controlling the displacement amount relative to the reference value, the distance between the two holding means is controlled, and the bump electrode is moved to a second temperature that is equal to or higher than the melting point. Control means for melting the bump electrode by further raising the temperature from the temperature of 1, and joining the two objects to be joined by the bump electrode;
With
The control means includes
The correspondence relationship between the amount of thermal expansion of at least one of the first holding means, the second holding means, the first object to be bonded, and the second object to be bonded and the temperature of the bump electrode. Then, based on the correspondence obtained by the prior measurement, the first bonded object and the second object when the temperature of the bump electrode changes from the first temperature to the second temperature. Estimate the amount of change in the distance between the workpieces and the amount of change due to thermal expansion,
When the heat treatment is continued in a state in which the temperature is further increased from the first temperature to the second temperature, the two objects to be covered are caused by thermal expansion of at least one of the first holding means and the second holding means. When it is estimated based on the amount of change that the bump electrodes are not crushed even if the distance between the joints is reduced, the amount of displacement according to the distance between the two holding means is used as the reference. bonding system while maintaining a value, and wherein the features and to Rukoto to carry out heat treatment in a molten state of the bump electrode.
ａ）接合対象の２つの被接合物のうちの第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温するステップと、
ｂ）前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の被接合物を保持する第１の保持手段と第２の被接合物を保持する第２の保持手段との２つの保持手段の相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させるステップと、
ｃ）前記バンプ電極が前記第２の被接合物に接触したことを検出するとともに、前記第１の保持手段と前記第２の保持手段との２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での当該変位量の値を当該変位量に関する基準値として検出するステップと、
ｄ）前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合するステップと、
を備え、
前記第１の温度は、前記バンプ電極の融点よりも低い温度であり且つ前記バンプ電極の融点の１０℃以内の温度であることを特徴とする接合方法。 A joining method,
a) Step of raising the bump electrode provided on the bonding surface of the first bonded object of the two bonded objects to be bonded to a first temperature that is lower than the melting point of the bump electrode. When,
b) a first holding means for holding the first object to be bonded and a second holding means for holding the second object to be bonded in a state where the bump electrode has been heated to the first temperature; The distance between the two holding means is changed so that the two objects to be joined that are separated in a predetermined direction are relatively approached in the predetermined direction, and the bump electrode is moved to the second object in a solid state. Contacting the joint; and
c) The amount of displacement corresponding to the distance between the two holding means of the first holding means and the second holding means while detecting that the bump electrode has contacted the second object to be joined. The step of detecting the value of the displacement at the time of contact of the bump electrode as a reference value for the displacement;
d) controlling the distance between the two holding means by controlling the amount of displacement relative to the reference value, and moving the bump electrode to a second temperature that is equal to or higher than the melting point. Melting the bump electrode by further raising the temperature from the first temperature, and joining the two objects to be joined by the bump electrode;
With
The bonding method according to claim 1, wherein the first temperature is a temperature lower than a melting point of the bump electrode and a temperature within 10 ° C. of the melting point of the bump electrode.
前記ステップｄ）は、
ｄ−１）前記２つの保持手段の相互間距離を維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うステップ、
を有することを特徴とする接合方法。 In the joining method according to claim 7 ,
Said step d)
d-1) performing a heat treatment in a state where the bump electrode is melted while maintaining a distance between the two holding means;
A bonding method characterized by comprising:
前記ステップｄ）は、
ｄ−２）前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続することによって、前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離をさらに低減させるステップ、
を有することを特徴とする接合方法。 In the joining method according to claim 7 ,
Before Symbol step d) is,
d-2) Thermal expansion of at least one of the first holding means and the second holding means by continuing the heat treatment while the temperature is further increased from the first temperature to the second temperature. Further reducing the distance between the two objects to be joined by
A bonding method characterized by comprising:
前記ステップｄ）は、
ｄ−３）前記第１の温度から前記第２の温度にまでさらに昇温し前記バンプ電極を溶融させた状態で加熱処理を継続する期間において、前記２つの保持手段の相互間距離を維持しつつ前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離を低減させるステップ、を有することを特徴とする接合方法。 In the joining method according to claim 7 ,
Said step d)
d-3) Maintaining the distance between the two holding means during a period in which the temperature is further increased from the first temperature to the second temperature and the heat treatment is continued in a state where the bump electrode is melted. And a step of reducing the distance between the two objects to be bonded by thermal expansion of at least one of the first holding means and the second holding means.
ｅ）前記２つの被接合物に関して前記ステップａ），ｂ），ｃ），ｄ）を実行した後に、前記２つの被接合物とは別の２つの被接合物に関して前記ステップａ），ｂ），ｃ），ｄ）をさらに実行するステップ、
をさらに備えることを特徴とする接合方法。 In the joining method according to any one of claims 7 to 10 ,
e) After performing the steps a), b), c) and d) for the two objects to be bonded, the steps a) and b) for two objects to be bonded different from the two objects to be bonded. , C), d),
A joining method, further comprising:
ａ）接合対象の２つの被接合物のうちの第１の被接合物の接合表面に設けられたバンプ電極を当該バンプ電極の融点よりも低い温度である第１の温度にまで昇温するステップと、
ｂ）前記バンプ電極を前記第１の温度まで昇温した状態で、前記第１の被接合物を保持する第１の保持手段と第２の被接合物を保持する第２の保持手段との２つの保持手段の相互間距離を変更して、所定方向に離間していた前記２つの被接合物を当該所定方向において相対的に接近させ、前記バンプ電極を固相状態で前記第２の被接合物に接触させるステップと、
ｃ）前記バンプ電極が前記第２の被接合物に接触したことを検出するとともに、前記第１の保持手段と前記第２の保持手段との２つの保持手段の相互間距離に応じた変位量であって前記バンプ電極の接触時点での当該変位量の値を当該変位量に関する基準値として検出するステップと、
ｄ）前記変位量を前記基準値に対して相対的に制御することによって前記２つの保持手段の相互間距離を制御しつつ、前記融点以上の温度である第２の温度にまで前記バンプ電極を前記第１の温度からさらに昇温することにより前記バンプ電極を溶融させ、前記バンプ電極により前記２つの被接合物を接合するステップと、
を備え、
前記ステップｄ）は、
ｄ−１）前記第１の保持手段と前記第２の保持手段と前記第１の被接合物と前記第２の被接合物とのうちの少なくとも１つの熱膨張量と前記バンプ電極の温度との対応関係であって事前測定によって得られた当該対応関係に基づいて、前記バンプ電極の温度が前記第１の温度から前記第２の温度へと変化する際における前記第１の被接合物と前記第２の被接合物との間の相互間距離の変化量であって熱膨張に起因する変化量を推定するステップと、
ｄ−２）前記第１の温度から前記第２の温度にまでさらに昇温した状態で加熱処理を継続する際に前記第１の保持手段および前記第２の保持手段の少なくとも一方の熱膨張により前記２つの被接合物の相互間距離が低減されたとしても前記バンプ電極が潰れ過ぎない旨が前記変化量に基づいて推定される場合、前記２つの保持手段の相互間距離に応じた前記変位量を前記基準値に維持しつつ、前記バンプ電極を溶融させた状態での加熱処理を行うステップと、
を有することを特徴とする接合方法。 A joining method,
a) Step of raising the bump electrode provided on the bonding surface of the first bonded object of the two bonded objects to be bonded to a first temperature that is lower than the melting point of the bump electrode. When,
b) a first holding means for holding the first object to be bonded and a second holding means for holding the second object to be bonded in a state where the bump electrode has been heated to the first temperature; The distance between the two holding means is changed so that the two objects to be joined that are separated in a predetermined direction are relatively approached in the predetermined direction, and the bump electrode is moved to the second object in a solid state. Contacting the joint; and
c) The amount of displacement corresponding to the distance between the two holding means of the first holding means and the second holding means while detecting that the bump electrode has contacted the second object to be joined. The step of detecting the value of the displacement at the time of contact of the bump electrode as a reference value for the displacement;
d) controlling the distance between the two holding means by controlling the amount of displacement relative to the reference value, and moving the bump electrode to a second temperature that is equal to or higher than the melting point. Melting the bump electrode by further raising the temperature from the first temperature, and joining the two objects to be joined by the bump electrode;
With
Said step d)
d-1) The amount of thermal expansion of at least one of the first holding means, the second holding means, the first article to be joined, and the second article to be joined, and the temperature of the bump electrode And the first object to be bonded when the temperature of the bump electrode changes from the first temperature to the second temperature based on the corresponding relationship obtained by the preliminary measurement. Estimating the amount of change in the mutual distance between the second object to be joined and caused by thermal expansion;
d-2) Due to thermal expansion of at least one of the first holding means and the second holding means when the heat treatment is continued in a state where the temperature is further increased from the first temperature to the second temperature. When it is estimated based on the amount of change that the bump electrode is not crushed even if the distance between the two objects to be bonded is reduced, the displacement according to the distance between the two holding means Performing a heat treatment in a state where the bump electrode is melted while maintaining the amount at the reference value ;
A bonding method characterized by comprising:
請求項７ないし請求項１２のいずれかに記載の接合方法を用いて前記２つの被接合物を接合するステップを備えることを特徴とする半導体デバイスの製造方法。 A method for manufacturing a semiconductor device, comprising:
A method for manufacturing a semiconductor device, comprising the step of bonding the two objects to be bonded using the bonding method according to any one of claims 7 to 12 .
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|---|---|---|---|---|
| JPH09153525A (en) * | 1995-11-30 | 1997-06-10 | Toshiba Corp | Bonder and bonding method |
| JP4577941B2 (en) * | 1999-04-05 | 2010-11-10 | 東レエンジニアリング株式会社 | Chip mounting method and apparatus |
| JP4445163B2 (en) * | 2001-07-13 | 2010-04-07 | パナソニック株式会社 | Electronic component mounting equipment |
| JP4089531B2 (en) * | 2003-07-09 | 2008-05-28 | 富士通株式会社 | Manufacturing method of semiconductor device |
| JP4522881B2 (en) * | 2005-02-15 | 2010-08-11 | パナソニック株式会社 | Electronic component mounting method |
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2016
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