JP2017033693A - Mems type lithium ion battery and semiconductor/mems integrated circuit incorporated with the battery - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lithium ion battery capable of being manufactured using a semiconductor technology and a MEMS technology, capable of being miniaturized by being integrated together with a sensor, an electronic circuit, and an environment power generating device, having a sufficient power storage capacity, and contributing to the miniaturization of a wearable device or the like.SOLUTION: A lithium ion battery includes deep grooves 600, 650 in a crystal substrate 651 such as Si, an active material 656 of at least one of electrodes being embedded in the groove 650. The lithium ion battery has a structure for providing a cavity 698 with a constant space between the active material 656 and an active material 606 of the other electrode. The cavity 698 with a constant space includes, at one surface of the substrate 651, at least one opening for injecting an electrolyte and at least one opening for gas vent. In addition, the electrolyte is injected through the opening into the cavity 698 with a constant space. The structure is sealed at a temperature that does not cause a deterioration in the electrolyte.SELECTED DRAWING: Figure 6(a)

Description

  The present invention relates to a lithium ion battery manufactured using MEMS technology, and more particularly to a semiconductor / MEMS integrated circuit in which the battery is integrated and a manufacturing technique thereof.

  2. Description of the Related Art In recent years, electronic devices are becoming increasingly wearable, such as glasses-type displays and wristwatch-type terminals. Accordingly, sensors and electronic circuits are becoming smaller and thinner. In particular, if sensors and electronic circuits are integrated on a Si substrate, the size can be significantly reduced. At that time, the problem is the supply of power.

Therefore, various energy harvesting technologies for generating power from the surrounding environment such as electromagnetic waves, heat, light, and vibration have been developed as power sources suitable for wearable devices. These can be miniaturized using semiconductor technology and MEMS technology, and are energy that can be obtained anywhere, but power generation energy is not large. For example, a measure of the power generation amount per unit time, the electromagnetic wave at 10 ^-6 W / cm ^2, heat 10 ^-5 W / cm ^2, light ^10-4 W / cm ^2, vibrating at 10 ^-4 to 10 ^- it is ³ W / cm ² about.

Moreover, these energy harvesting technologies do not always generate electricity continuously because they depend on the environment. Therefore, in order to freely use the sensor and the electronic circuit when necessary, it is important to store the generated energy. For this purpose, a method for storing generated energy in a large-capacity capacitor such as an electric double layer capacitor has been developed. However, since the voltage of the capacitor also decreases in proportion to the amount of charge that has flowed out, the stored energy cannot be used effectively. For example, assuming that the accumulated voltage is 5V and a voltage drop of 0.1V is allowed by the outflow of electric charge, and calculated from the latest champion data of 64mF / cm ^{2 for} electric double layer capacitors, even if 100 layers are stacked, The energy density is only about 10 ^-4 W · h per unit area.

On the other hand, secondary batteries typified by lithium-ion batteries can be charged and discharged freely, and electrode active materials that reach a volume energy density of 500 W · h / L have been developed. This is an energy density that is at least two orders of magnitude higher than that of the electric double layer capacitor described above. However, such a conventional lithium ion battery is formed by laminating a film or plate-like material such as a positive electrode, a positive electrode active material, a separator, a negative electrode active material, and a negative electrode, and including an electrolyte in the separator. Furthermore, it has a multilayer structure in which the outside is laminated with a film. Such a mechanically laminated structure must be larger than sensors and electronic circuits integrated on a silicon substrate or the like, and printed to connect batteries and integrated circuits. It has been unavoidably used as a wearable electronic device because there is a limit to miniaturization because it has to mediate another support such as a substrate.

Further, a lithium ion battery using a solid thin film electrolyte formed by a technique such as sputtering has been proposed for the purpose of a backup power source of a volatile memory element (for example, Patent No. 3116857, Patent No. 3214107). No. 4,10303, etc.), the capacity is very small due to the thin film laminated structure, and it is not sufficient for use as a power source even for wearable devices.

Patent No. 3116857, semiconductor substrate mounted secondary battery Patent No. 3214107, integrated circuit device with battery Japanese Patent Publication No. 4-10303, Power supply for semiconductor memory

  As described above, power storage means that can be integrated with semiconductor integrated circuits, electronic circuits, semiconductor light-emitting elements, MEMS sensors, energy harvesting devices, etc., and that can be applied to wearable devices, etc., and has a sufficient storage capacity Was desired.

  A battery using the intercalation of lithium is most suitable as the power storage means from the viewpoint of power storage capacity (hereinafter referred to as “lithium ion battery”). Lithium ion batteries generally use lithium metal ceramics as the positive electrode active material, carbon fine powder, etc. as the negative electrode active material, and use an electrolyte solution consisting of lithium salt between them to utilize the movement of lithium ions in the electrolyte solution To do. In particular, since the electrolytic solution deteriorates as the temperature rises, it is not preferable to expose it to a temperature of 80 ° C. or higher. Similarly, exposure of the positive electrode active material and the negative electrode active material to a temperature higher than about 150 ° C. is not preferable.

  On the other hand, in the manufacturing process in the semiconductor technology and MEMS technology used to reduce the size of the lithium ion battery, a photolithography process is always required to perform pattern formation. At that time, since the photoresist material is usually liquid and is used after drying, it is generally baked at a temperature of about 80 ° C. in pre-bake before exposure and at a temperature of about 120 ° C. to 150 ° C. in post-bake after exposure. Is. In addition, even in a film formation process for constructing an element structure, even if a sputtering method capable of forming a film at the lowest temperature is used, energy of atoms that are sputtered and reach the substrate is absorbed, so that the temperature is 100 ° C. to 150 ° C. It is necessary to allow the temperature of the substrate to rise by about ℃.

Therefore, lithium-ion batteries are manufactured using semiconductor technology and MEMS technology, and the size is reduced, and lithium-ion batteries are integrated with semiconductor integrated circuits, electronic circuits, semiconductor light-emitting elements, MEMS sensors, energy harvesting devices, etc. For this purpose, it has been a specific problem to create a battery structure and a manufacturing process that can be manufactured without going through a process temperature that causes a problem in the active material and the electrolyte solution constituting the lithium ion battery.

In view of the above problems, the present invention provides a novel structure of a lithium ion battery that can be manufactured using semiconductor technology or MEMS technology and can be integrated with a semiconductor integrated circuit, a MEMS sensor, or an energy harvesting device.

Specifically, the lithium ion battery of the present invention has a deep groove in a solid substrate such as silicon, and at least one of the electrode active materials is embedded in the groove, and between the other electrode active material. And having a structure for providing cavities at regular intervals, and the cavities at regular intervals have at least one opening for injecting at least one electrolyte into one surface of the substrate, and at least one gas vent. Has an opening for. Furthermore, these structures can be manufactured at a temperature at which the electrode active material does not deteriorate, and can be sealed at a temperature at which the electrolyte does not deteriorate after injection of the electrolyte. A semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, and the like are constructed before manufacturing the lithium ion battery structure of the present invention. An electrolytic solution is injected and sealed into the gaps at regular intervals from the openings to form a lithium ion battery.

According to the present invention, it is possible to manufacture a lithium ion battery on a solid substrate using semiconductor technology or MEMS technology. The lithium ion battery of the present invention can be manufactured by being integrated with a semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, and the like. Therefore, it can be expected that the application technology range using this device will be greatly expanded.

  The embodiment of the lithium ion battery of the present invention is roughly classified into three types depending on the arrangement of the electrode active material. The first mode is a structure in which a positive electrode active material and a negative electrode active material are separately provided on each of two solid substrates, and the two solid substrates are bonded. The first aspect is a structure in which the storage capacity of the lithium ion battery is maximized. The second mode is a structure in which a positive electrode active material and a negative electrode active material are provided adjacent to each other on one side of a single solid substrate, and a substrate on which a semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, or the like is formed. A lithium ion battery can be integrated on the back side. Further, in the third mode, the active material of one of the electrodes is provided in the solid substrate, and the active material of the other electrode is stacked above. The third aspect is characterized in that only the same substrate surface on which the semiconductor integrated circuit, the MEMS sensor, and the energy harvesting device are formed is used, and the structure is close to a planar structure.

According to a first aspect of the lithium ion battery of the present invention, the first deep groove formed by anisotropic etching on one surface of the first solid substrate, and the first deep groove from the bottom of the first deep groove. Formed by anisotropic etching on one surface of the first metal electrode drawn on one surface of the solid substrate, the first electrode active material embedded in the first deep groove, and the second solid substrate The second deep groove, a second metal electrode drawn out from the bottom of the second deep groove to one surface of the second solid substrate, and a second embedded in the second deep groove It has an electrode active material and has a structure in which one surface of the first solid substrate and one surface of the second solid substrate are joined at a constant interval to form a cavity. As the bonding method, a thermocompression bonding method using gold fine particles is used. According to this method, a gold-gold junction can be formed at about 150 ° C., and characteristic deterioration of the first electrode active material and the second electrode active material can be avoided.

Furthermore, in the first aspect of the present invention, the gap having a constant interval has a structure having at least two openings on the other surface of either the first solid substrate or the second solid substrate. The opening is provided at a location on the substrate surface that does not interfere with the first metal electrode and the second metal electrode. Therefore, after all the manufacturing steps are completed, the electrolytic solution can be injected into the cavity from the opening, and the opening is finally sealed with resin or the like. Thereby, it can be made to operate | move as a lithium ion battery, without causing deterioration of electrolyte solution.

Furthermore, in the above configuration, a semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, or the like can be formed in advance on the other surface of the first solid substrate or the second solid substrate. The other surface and one surface on which the lithium ion battery of the present invention is formed can be connected in advance with a through electrode. The semiconductor integrated circuit may include a current control circuit for charging the lithium ion battery of the present invention and a voltage control circuit for discharging.

According to a second aspect of the lithium ion battery of the present invention, the first deep groove formed by anisotropic etching on one surface of the first solid substrate, and the first deep groove from the bottom of the first deep groove. Formed by anisotropic etching on the same surface as the first surface, the first metal electrode drawn on one surface of the solid substrate, the first electrode active material embedded in the first deep groove The second deep groove, a second metal electrode drawn from the bottom of the second deep groove to one surface of the first solid substrate, and a second embedded in the second deep groove It has an electrode active material, and has a structure in which one surface of the first solid substrate and one surface of the second solid substrate are joined at a constant interval to form a cavity. As the connection method, a thermocompression bonding method using gold fine particles is used. According to this method, a gold-gold junction can be formed at about 150 ° C., and characteristic deterioration of the first electrode active material and the second electrode active material can be avoided.

Furthermore, in the second aspect of the present invention, the gap having the constant interval has a structure having at least two openings on the other surface of the first solid substrate. The opening is provided at a location on the substrate surface that does not interfere with the first metal electrode and the second metal electrode. Therefore, after all the manufacturing steps are completed, the electrolytic solution can be injected into the cavity from the opening, and the opening is finally sealed with resin or the like. Thereby, it can be made to operate | move as a lithium ion battery, without causing deterioration of electrolyte solution.

Furthermore, in the above configuration, a semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, or the like can be formed in advance on the other surface of the first solid substrate. The other surface and the one surface can be connected in advance with a through electrode. The semiconductor integrated circuit may include a current control circuit for charging the lithium ion battery of the present invention and a voltage control circuit for discharging.

According to a third aspect of the lithium ion battery of the present invention, the first deep groove formed by anisotropic etching on one surface of the first solid substrate, and the first deep groove from the bottom of the first deep groove. A first metal electrode drawn on one surface of the substrate; a first electrode active material embedded in the first deep groove; and a spacer partially formed on the first electrode active material; And a second electrode active material formed on the spacer and a second metal electrode formed on the second electrode active material. The space between the first electrode and the second electrode is kept constant by the spacer to form a cavity. Since the spacer is formed at 150 ° C. or lower, it is possible to avoid deterioration of characteristics of the first electrode active material and the second electrode active material.

Furthermore, in the third aspect of the present invention, the cavity has a structure having at least two openings on one surface of the first solid substrate. The opening is provided at a location on the substrate surface that does not interfere with the first metal electrode and the second metal electrode. Therefore, after all the manufacturing steps are completed, the electrolytic solution can be injected into the cavity from the opening, and the opening is finally sealed with resin or the like. Thereby, it can be made to operate | move as a lithium ion battery, without causing deterioration of electrolyte solution.

Furthermore, in the above configuration, a semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, or the like can be formed in advance on one surface of the first solid substrate. The semiconductor integrated circuit may include a current control circuit for charging the lithium ion battery of the present invention and a voltage control circuit for discharging.

  Next, the first to third embodiments of the present invention will be described based on examples with reference to the drawings. The examples of the first to third embodiments described below are examples embodying the technical idea of the present invention, and the shape, material, structure, arrangement, etc. of the components are as follows. Not specific. The technical idea of the present invention can be variously modified within the technical scope described in the claims.

  In the following description of the embodiments, for specifying the front and back surfaces of the solid substrate, for example, a “main surface” in which a “groove” described later is formed on the substrate is referred to as a “main surface”. The surface opposite to the main surface is referred to as “back surface”. Therefore, unless otherwise specified, the term “surface” means “surface in a broad sense” and does not mean “front side (= opposite side of back side)”. For this reason, expressions such as “surface of main surface” and “surface of back surface” are sometimes used.

In the following embodiments, the description will be made in the case of a silicon (Si) substrate as the solid substrate. However, the solid substrate is not limited to a silicon substrate, and may be a semiconductor substrate such as a gallium arsenide (GaAs) substrate, an indium phosphide (InP) substrate, a germanium substrate (Ge), or a gallium nitride ( A wide band gap semiconductor substrate such as a GaN substrate or a silicon carbide (SiC) substrate may be used, or an amorphous substrate such as a quartz glass substrate or a ceramic substrate may be used.

(First embodiment)

The first embodiment of the present invention is the most basic structure in which a positive active material and a negative active material are separately provided in each of inverted deep trapezoidal grooves provided on two silicon substrates. As an example, two silicon substrates are joined together with a structure that forms a cavity between them, and a lithium ion battery is formed by filling the cavity with an electrolyte.

A sectional view and a plan view of the first example according to the first embodiment are shown in FIG. 1 (a) and FIG. 1 (b). The cross-sectional view on the left side of FIG. 1 (a) shows the cross-section on the line AA ′ of FIG. 1 (b), and the cross-sectional view on the right side of FIG. 1 (a) shows the cross-section on the line OB ′ of FIG. Each of the cross sections is shown.

As shown in FIG. 1 (a), a lower silicon substrate 101 having a deep inverted trapezoidal groove 100 on its main surface is covered with a silicon oxide film. The deep inverted trapezoidal groove 100 forms a mask pattern so that each side of the etching pattern is in the <100> direction with respect to the (100) surface of the silicon substrate, and is made of tetramethylammonium hydroxide (TMAH) solution. It can be formed by isotropic etching. The side wall of the inverted trapezoidal groove 100 is the (111) plane, and its inclination angle is about 55 ° .Therefore, a metal electrode is sputtered from the bottom surface of the inverted trapezoidal groove 100 to the main surface through the side wall. It can be formed by vapor deposition. Of course, the groove to be formed may be, for example, a U-shaped groove having a nearly vertical side wall formed by reactive ion etching. In this case, the metal electrode can be formed by sputtering or vapor deposition from an oblique direction.

The gold (Au) electrode 105 is a negative electrode, and is wired from the bottom surface of the inverted trapezoidal groove 100 to the main surface of the lower silicon substrate 101. At the same time, the gold electrode 105 ′ for supporting a part of the upper gold electrode 155 and the outer periphery of the lower silicon substrate 101 are surrounded on the main surface of the lower silicon substrate 101 to join the upper and lower substrates. A gold electrode 105 "used for each is also formed. Although not shown in the drawing, the gold electrode 105", 105 ', 105 "is thinly formed between the two in order to improve the adhesion between the silicon oxide film 102 and the gold electrode 105". It is self-evident to sandwich a titanium or chromium layer.

A negative active material 106 is embedded in the deep inverted trapezoidal groove 100 of the lower silicon substrate 101. The active material 106 for the negative electrode can be selected from amorphous carbon, graphite, lithium titanate compound, and the like depending on the design of battery voltage, current output, capacity, and the like. For the binder used in admixture with the negative electrode active material to fix the negative electrode active material to the silicon substrate, select polyvinylidene fluoride (PVDF), acrylic resin, or imide resin when the temperature is high during the process. Is also possible. A deep inverted trapezoidal groove 100 is formed by kneading a paste obtained by adding a negative electrode active material and a binder using an organic solvent such as N-methyl-2-pyrrolidone (NMP) and, if necessary, a conductive material such as fine carbon powder. Apply and compress for pressure after drying, increase electrode density, improve adhesion to silicon substrate and stabilize electrical connection. It is important that the surface of the active material 106 of the negative electrode after compression is the same height as the main surface of the lower silicon substrate 101 or slightly below.

Similarly, the upper silicon substrate 151 having the deep inverted trapezoidal groove 150 on the main surface is also covered with the silicon oxide film 152. The gold electrode 155 is a positive electrode, and is wired from the bottom surface of the inverted trapezoidal groove 150 to the main surface of the upper silicon substrate 151. At the same time, on the surface of the main surface of the upper silicon substrate 151, a gold electrode 155 ′ for connecting to the lower gold electrode 105, and a gold electrode 155 for surrounding the outer periphery of the upper silicon substrate 151 and bonding the upper and lower substrates to each other. "Is also formed.

A positive active material 156 is embedded in the deep inverted trapezoidal groove 150 of the upper silicon substrate 151. The positive electrode active material 156 is selected from ceramics having a layered crystal structure containing lithium, spinel crystal structure that holds lithium ions between crystals, or ceramics having an olivine crystal structure depending on element design such as capacity, voltage, and safety. Is possible. In particular, manganese spinel that does not cause thermal runaway is desirable because of its small self-discharge.

Like the negative electrode active material, the positive electrode active material is kneaded in an organic solvent such as NMP together with a binder selected from PVDF, acrylic resin, imide resin, etc. and a conductive material such as conductive fine powder carbon, to form a paste or the like It is processed and applied to the inverted trapezoidal groove 150, and after drying, it is compressed by applying pressure to increase the density, and the adhesion and conductivity are improved. It is important that the surface of the positive electrode active material 156 after compression be the same height as the main surface of the upper silicon substrate 151 or slightly below.

Lower silicon substrate 101 and upper silicon substrate 151 are connected to lower gold electrode 105 and upper gold electrode 155 ′, lower gold electrode 105 ′ and upper gold electrode 155, and lower gold electrode. Gold fine particle layers 195, 195 ′ and 195 ″ are provided between 105 ″ and the upper gold electrode 155 ″, respectively, and bonded by thermocompression bonding. Even when the temperature is as low as ˜200 ° C., it can be bonded and can prevent deterioration due to heat of the negative electrode active material 106 and the positive electrode active material 156. When PVDF is used as a binder for the negative electrode active material 106 and the positive electrode active material 156 The heat resistance temperature is about 150 ° C, but if imide resin is used as a binder, the heat resistance as an active material is further improved, so the lower silicon substrate 101 and the upper silicon substrate should be bonded at a higher temperature. Can do.

From the back surface of the upper silicon substrate 151, through the electrode through hole 196 formed by anisotropic etching with TMAH or deep silicon dry etching, the upper gold electrode 155 as the positive electrode and the lower gold electrode as the negative electrode 105 (upper gold electrode 155 ′).

In addition, the gold particle bonding allows a constant interval between the lower silicon substrate 101 and the upper silicon substrate 151, and a constant interval between the negative electrode active material 106 and the positive electrode active material 156. It is possible to have a sealed structure. A through hole 197 formed by anisotropic etching with TMAH or deep silicon dry etching is provided from the back surface of the upper silicon substrate 151, and an electrolytic solution 198 is injected therefrom. The electrolytic solution is a solution in which a lithium salt such as lithium hexafluorophosphate is dissolved using ethylene carbonate or the like as a solvent, and can be gelled by post-heat treatment if necessary. Although the heat resistance temperature of the electrolyte using lithium hexafluorophosphate is only about 85 ° C, the electrolyte 198 is injected after the entire structure is constructed, and then the through hole 197 is ion-sealed with the UV curable resin 199. Since it stops, the problem that electrolyte solution deteriorates does not arise. The sealing may be performed after precharging and degassing moisture. If an imide-based electrolyte is used as the solvent for the electrolyte, the heat resistance temperature of the electrolyte (including gel) can be raised slightly. Necessary sealing films can be used.

As shown in FIG. 1B, when the back surface side of the upper silicon substrate 151 is viewed as a planar arrangement, the gold electrode 155 contacts the bottom surface of the positive electrode material 156, and the electrode is taken out to the A ′ side in the drawing. Similarly, although the lower silicon substrate 101, the gold electrode 105, and the negative electrode material 106 are not shown in the drawing, the electrode is taken out from the gold electrode 155 'to the A side in the drawing. Therefore, electricity can be taken out from the two electrode through holes 196 arranged in the A-A ′ direction.

On the other hand, two or more through holes 197 for injecting the electrolytic solution 198 are provided in the BB ′ direction in the drawing so as not to interfere with the electrode position. Thus, by arranging the through-holes 196 for electrodes and the through-holes 197 for injecting the electrolyte in directions different by 90 ° on the plane, the electrolyte can be injected after all the structures are constructed.

The reason why two or more through-holes for injecting the electrolytic solution are necessary is that at least one of them is for venting the gas inside when injecting the electrolytic solution. The electrolyte 198 is sealed with a gold particle layer 195 ″ provided on the outer periphery of the silicon substrate so as not to be exposed to air, and the through hole 197 is sealed with an ultraviolet curable resin 199.

According to this embodiment, a lithium ion battery can be constructed on a solid substrate such as a silicon substrate by a semiconductor or MEMS process technology, and exposed to a high temperature at which the positive and negative electrode materials and electrolyte of the lithium ion battery deteriorate. It will never be.

FIG. 2 shows a cross-sectional view of a second example in which an electrode is taken out to the outermost surface by a through electrode according to the first embodiment of the present invention.

As shown in FIG. 2, the structure of the present embodiment has many parts similar to those of the first embodiment. A lower silicon substrate 201 having a deep inverted trapezoidal groove 200 on the main surface is covered with a silicon oxide film 202. The gold electrode 205 is a negative electrode, and is wired from the bottom surface of the deep inverted trapezoidal groove 200 to the main surface of the lower silicon substrate 201, and the upper gold electrode is disposed on the lower silicon substrate 201 main surface. A gold electrode 205 ′ for supporting a part of 255 and a gold electrode 205 ″ surrounding the outer periphery of the lower silicon substrate 201 and joining the upper and lower substrates are also formed. A negative active material 206 is embedded in the deep inverted trapezoidal groove 200.

Similarly, the upper silicon substrate 251 having the deep inverted trapezoidal groove 250 on the main surface is also covered with the silicon oxide film 252. The upper silicon substrate 251 is provided with surface electrodes 253 and 253 'and through electrodes 254 and 254' in advance. The gold electrode 255 is a positive electrode, and is wired from the bottom of the deep inverted trapezoidal groove 250 to the surface of the upper silicon substrate 251. The main surface of the upper silicon substrate 251 has a lower gold electrode 205 and A gold electrode 255 ′ for connection and a gold electrode 255 ″ surrounding the outer periphery of the silicon substrate 251 and joining the upper and lower substrates are also formed. In the deep inverted trapezoidal groove 250 of the upper silicon substrate 251, respectively. Is embedded with a positive electrode active material 256.

Lower silicon substrate 201 and upper silicon substrate 251, lower gold electrode 205 and upper gold electrode 255 ', lower gold electrode 205' and upper gold electrode 255, and lower gold electrode Gold fine particle layers 295, 295 ′ and 295 ″ are provided between 205 ″ and the upper gold electrode 255 ″, respectively, and bonded by thermocompression bonding.

Further, the gold particle bonding allows a constant distance between the lower silicon substrate 201 and the upper silicon substrate 251, and furthermore, a constant distance between the negative electrode active material 206 and the positive electrode active material 256, and complete It is possible to make a sealed structure. An electrolyte solution 298 is injected from a through hole 297 formed from the back surface of the upper silicon substrate 251. Further, the through hole 297 is sealed with an ultraviolet curable resin 299.

According to the present embodiment, the positive electrode can be taken out from the electrode 253 on the flat portion of the outermost surface, and the negative electrode can be taken out from the electrode 253 ', so that it is easy to use.

FIG. 3 shows a cross-sectional view of a third example according to the first embodiment of the present invention, in which an electrode is taken out on the back surface by a through electrode.

As shown in FIG. 3, a lower silicon substrate 301 having a deep inverted trapezoidal groove 300 on the main surface is covered with a silicon oxide film 302. The lower silicon substrate 301 is provided with surface electrodes 303 and 303 'and through electrodes 304 and 304' in advance. The gold electrode 305 is a negative electrode, and is wired from the bottom of the deep inverted trapezoidal groove 300 to the main surface of the lower silicon substrate 301. The upper surface of the lower silicon substrate 301 has an upper gold surface. A gold electrode 305 ′ for supporting a part of the electrode 355 and a gold electrode 305 ″ surrounding the outer periphery of the lower silicon substrate 301 and joining the upper and lower substrates are also formed. A negative active material 306 is embedded in the deep inverted trapezoidal groove 300 of 301.

Similarly, the upper silicon substrate 351 having the deep inverted trapezoidal groove 350 on the main surface is also covered with the silicon oxide film 352. The gold electrode 355 is a positive electrode, and is wired from the bottom surface of the inverted trapezoidal groove 351 to the main surface of the upper silicon substrate 351, and the lower gold electrode 305 is disposed on the upper silicon substrate 351 surface. A gold electrode 355 ′ for connecting to the upper silicon substrate 351 and a gold electrode 355 ″ for joining the upper and lower substrates to each other. A deep inverted trapezoidal shape of the upper silicon substrate 351 is also formed. A positive electrode active material 356 is embedded in the groove 350.

Lower silicon substrate 301 and upper silicon substrate 351, lower gold electrode 305 and upper gold electrode 355 ′, lower gold electrode 305 ′ and upper gold electrode 355, and lower gold electrode Gold fine particle layers 395, 395 ′ and 395 ″ are provided between 305 ″ and the upper gold electrode 355 ″, respectively, and bonded by thermocompression bonding.

In addition, the gold particle bonding enables a constant interval between the lower silicon substrate 301 and the upper silicon substrate 351, and a constant interval between the negative electrode active material 306 and the positive electrode active material 356. It is possible to make a sealed structure. An electrolytic solution 398 is injected from a through hole 397 formed from the back surface of the upper silicon substrate 351. Further, the through hole 397 is sealed with an ultraviolet curable resin 399.

According to the present embodiment, since the positive electrode can be taken out from the electrode 304 on the back surface and the negative electrode can be taken out from the electrode 304 ', it can be used as a battery for surface mounting.

FIG. 4 is a cross-sectional view of a fourth example integrated with a semiconductor integrated circuit or a MEMS sensor according to the first embodiment of the present invention.

As shown in FIG. 4, a lower silicon substrate 401 having a deep inverted trapezoidal groove 400 on the main surface is covered with a silicon oxide film 402. The gold electrode 405 is a negative electrode, and is wired from the bottom surface of the inverted trapezoidal groove 400 to the main surface of the lower silicon substrate 401. One surface of the upper gold electrode 455 is formed on the main surface of the silicon substrate 401. A gold electrode 405 ′ for supporting the portion and a gold electrode 405 ”for enclosing the outer periphery of the silicon substrate 401 and joining the upper and lower substrates are also formed. A deep inverted trapezoidal groove in the lower silicon substrate 401 is also formed. 400 is embedded with a negative electrode active material 406.

Similarly, the upper silicon substrate 451 having the deep inverted trapezoidal groove 450 on the main surface is also covered with the silicon oxide film 452. The upper silicon substrate 451 is provided with surface electrodes 453 and 453 ′ and through electrodes 454 and 454 ′ in advance. Further, on the back surface of the upper silicon substrate 451, a semiconductor integrated circuit, a MEMS sensor, and an energy harvesting device are preliminarily constructed as indicated by a region 492 surrounded by a broken line. The wiring 493 ′ is connected to the negative electrode surface electrode 453 ′. The gold electrode 455 is a positive electrode, and is wired from the bottom surface of the inverted trapezoidal groove 450 to the main surface of the upper silicon substrate 451. The main surface of the silicon substrate 451 has a lower gold electrode 405 and A gold electrode 455 ′ for connection and a gold electrode 455 ”surrounding the outer periphery of the silicon substrate 451 and joining the upper and lower substrates are also formed. The deep inverted trapezoidal groove 450 of the upper silicon substrate 451 is formed in the deep inverted trapezoidal groove 450. A positive electrode active material 456 is embedded.

The lower silicon substrate 401 and the upper silicon substrate 451 are connected to the lower gold electrode 405 and the upper gold electrode 455 ′, the lower gold electrode 405 ′ and the upper gold electrode 455, and the lower gold electrode. Gold fine particle layers 495, 495 ′ and 495 ″ are provided between 405 ″ and the upper gold electrode 455 ″, respectively, and bonded by thermocompression bonding.

Further, the gold particle bonding allows a constant distance between the lower silicon substrate 401 and the upper silicon substrate 451, and further, a constant distance between the negative electrode active material 406 and the positive electrode active material 456, and complete It is possible to have a sealed structure. An electrolytic solution 498 is injected from a through hole 497 formed from the back surface of the upper silicon substrate 451. Further, the through hole 497 is sealed with an ultraviolet curable resin 499.

According to the present embodiment, the semiconductor integrated circuit, the MEMS sensor, the energy harvesting device and the MEMS lithium ion battery of the present invention can be integrated. For example, the energy generated by the energy harvesting device is stored in the MEMS lithium ion battery, It is possible to construct an integrated device that is used when a semiconductor integrated circuit or a MEMS sensor is required. Further, if a constant voltage circuit is used as a part of the semiconductor integrated circuit, a power source that constantly generates a constant voltage can be obtained by making the most of the amount of electricity stored in the battery. Therefore, it can be widely used as an application to industrial and consumer devices.

FIG. 5 shows a sectional view of a fifth example according to the first embodiment of the present invention, in which batteries are connected in series to increase the output voltage.

As shown in FIG. 5, a lower silicon substrate 501 having two deep inverted trapezoidal grooves 500-1 and 500-2 on the main surface is covered with a silicon oxide film 502. The two gold electrodes 505-1 and 505-2 are negative electrodes, respectively, and are wired from the bottom surfaces of the inverted trapezoidal grooves 500-1 and 500-2 to the main surface of the lower silicon substrate 501, On the main surface of the silicon substrate 501, a gold electrode 505 'for supporting a part of the upper gold electrode 555-2 and a gold electrode 505 "for enclosing the outer periphery of the silicon substrate 501, and joining the upper and lower substrates Negative active materials 506-1 and 506-2 are embedded in the two deep inverted trapezoidal grooves 500-1 and 500-2 of the lower silicon substrate 501, respectively.

Similarly, the upper silicon substrate 551 having two deep inverted trapezoidal grooves 550-1 and 550-2 on the main surface is also covered with the silicon oxide film 552. The upper silicon substrate 551 is provided with surface electrodes 553 and 553 'and through electrodes 554 and 554' in advance. The two gold electrodes 555-1 and 555-2 are positive electrodes, and are wired from the bottom surfaces of the deep inverted trapezoidal grooves 550-1 and 550-2 to the main surface of the upper silicon substrate 551. On the surface of 551, a gold electrode 555 'for connecting to the lower gold electrode 505-1 and a gold electrode 555 "for enclosing the outer periphery of the silicon substrate 551 and joining the upper and lower substrates are also formed. Positive active materials 556-1 and 556-2 are embedded in the two deep inverted trapezoidal grooves 550-1 and 550-2 of the upper silicon substrate 551, respectively.

Lower silicon substrate 501, upper silicon substrate 551, lower gold electrode 505-1 and upper gold electrode 555 ', lower gold electrode 505-2 and upper gold electrode 555-1, lower Between the gold electrode 505 ′ and the upper gold electrode 555-2, and between the lower gold electrode 505 ″ and the upper gold electrode 555 ″, respectively, a gold fine particle layer 595 ′, 595-1, 595-2, And 595 "are provided and bonded by thermocompression bonding.

Further, the gold particle bonding allows a constant distance between the lower silicon substrate 501 and the upper silicon substrate 551, and further, the negative electrode active materials 506-1 and 506-2 and the positive electrode active materials 556-1 and 556. It is possible to make a completely sealed structure with a constant interval between -2. The electrolyte solution is injected from a through hole (not shown) formed from the back surface of the upper silicon substrate 551 as in the other examples, but the electrolyte solution 598-1 and the electrolyte solution 598-2 are gold fine particles. Two or more through holes are provided for each of the electrolytes 598-1 and 598-2. Further, the through hole is sealed with an ultraviolet curable resin.

According to the present embodiment, not limited to two, a plurality of MEMS type lithium ion batteries can be connected in series, and an arbitrary voltage proportional to the number of cells connected in series can be generated.

(Second Embodiment)

The second embodiment of the present invention has a structure in which a positive electrode active material and a negative electrode active material are provided adjacent to each other on the main surface of a single substrate. A semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, etc. A significant feature is that lithium ion batteries can be integrated and formed on a substrate formed in advance on the surface.

FIG. 6A shows a cross-sectional view of the sixth example integrated with a semiconductor integrated circuit and a MEMS sensor, and FIG. 6B shows the planar arrangement of the positive and negative active materials. ) Respectively.

As shown in FIG. 6A, the upper silicon substrate 651 having a plurality of deep inverted trapezoidal grooves 600 and 650 on the surface of the main surface is covered with a silicon oxide film 652. The upper silicon substrate 651 is provided with a surface electrode 653 and a through electrode 654 in advance. Further, on the back surface of the upper silicon substrate 651, as shown by a region 692 surrounded by a broken line, a semiconductor integrated circuit, a MEMS sensor, and an energy harvesting device are built in advance and connected to the surface electrode 653 by the surface wiring 69. ing.

The gold electrode 655 is a positive electrode, and is wired from the bottom surface of the outer inverted trapezoidal groove 650 to the main surface of the upper silicon substrate 651, and the outer deep inverted trapezoidal groove 650 has a positive active material 656. Is embedded. The gold electrode 605 is a negative electrode, is provided on at least the bottom surface of the inner deep inverted trapezoidal groove 600, and at least a part of the oxide film on the bottom surface of the inner inverted trapezoidal groove 600 is removed. A negative active material 606 is embedded in the deep inverted trapezoidal groove 600 inside. Further, a gold electrode 655 ″ for surrounding the outer periphery of the silicon substrate 651 and joining the upper and lower substrates is also formed on the main surface of the silicon substrate 651.

The upper silicon substrate 651 includes a lower gold electrode 605 ′ and an upper gold electrode 655, and a fine gold particle layer 695 ′ and a lower gold electrode 605 ″ and an upper gold electrode 655 ″, respectively. , 695 "are provided and bonded to the lower silicon substrate 601 by thermocompression bonding to cover them.

By this gold particle bonding, the space between the lower silicon substrate 601 and the upper silicon substrate 651 can be kept constant, and the space between the negative electrode active material 606 and the positive electrode active material 656 can be kept constant and completely sealed. Can be made with a structured. An electrolyte solution 698 is injected from a through hole 697 formed from the back surface of the upper silicon substrate 651. Further, the through hole 697 is sealed with an ultraviolet curable resin 699.

FIG. 6 (b) shows a planar arrangement of only the negative electrode active material 606 and the positive electrode active material 656. Each active material is not opposed but only adjacent, but the negative electrode active material 606 is surrounded by the positive electrode active material 656, and as long as there is an electrolyte in this adjacent portion, lithium ions are not present. It can move and acts as a battery. Although the internal resistance of the battery is slightly increased because the active material is not opposed, and the maximum instantaneous current is reduced, the available charge amount is the same as the structure where the active material is opposed, and the active material of the positive electrode or the negative electrode It depends only on the volume of the active material. It is desirable to design so that the volume of the central negative electrode active material 606 and the peripheral positive electrode active material are substantially the same.

According to this example, the lower silicon substrate serves only as a lid, so it can be made thinner, and the stored energy is about half that of the first embodiment in which two silicon substrates are joined. However, the semiconductor integrated circuit, the MEMS sensor, the energy harvesting device, and the MEMS type lithium ion battery of the present invention can be integrated with almost the same thickness as one silicon substrate.

FIG. 7 (a) is a cross-sectional view of a seventh example in which the arrangement of the active material of the adjacent positive electrode and the active material of the negative electrode differs according to the second embodiment of the present invention. The planar arrangement is shown in FIG.

As shown in FIG. 7A, the upper silicon substrate 751 having a plurality of deep inverted trapezoidal grooves 700 and 750 on the main surface is covered with a silicon oxide film 752. The upper silicon substrate 751 is provided with surface electrodes 753 and 753 'and through electrodes 754 and 754' in advance. Further, a semiconductor integrated circuit, a MEMS sensor, an energy harvesting device, or the like may be integrated on the back surface of the upper silicon substrate 751.

The gold electrode 755 is a positive electrode, and is wired from the bottom surface of one inverted trapezoidal groove 750 to the main surface of the upper silicon substrate 751, and one deep inverted trapezoidal groove 750 has a positive electrode active material 756. Is embedded. The gold electrode 705 is a negative electrode, and is wired from the bottom surface of the other deep inverted trapezoidal groove 700 to the main surface of the upper silicon substrate 751, and the other deep inverted trapezoidal groove 700 has a negative electrode. An active material 706 is embedded. Further, a gold electrode 755 ″ for enclosing the outer periphery of the silicon substrate 751 and joining the upper and lower substrates is also formed on the main surface of the silicon substrate 751.

The upper silicon substrate 751 includes a lower gold electrode 705 ′ and an upper gold electrode 755, and a gold fine particle layer 795 ′ and a lower gold electrode 705 ″ and an upper gold electrode 755 ″, respectively. , 795 ″ and thermocompression bonded to the lower silicon substrate 701 to cover.

By this gold particle bonding, the space between the lower silicon substrate 701 and the upper silicon substrate 751 can be kept constant, and further, the space between the negative electrode active material 706 and the positive electrode active material 756 can be kept constant and completely sealed. Can be made with a structured. An electrolytic solution 798 is injected from a through hole 797 formed from the back surface of the upper silicon substrate 751. Further, the through hole 797 is sealed with an ultraviolet curable resin 799.

FIG. 7B shows a planar arrangement of only the negative electrode active material 706 and the positive electrode active material 756. The active materials are not facing each other but are adjacent to each other, but the active material of the positive electrode is arranged in a comb-like shape of the active material of the negative electrode, and the positive and negative active materials are lithium ions near the adjacent side. Move.

Compared to the sixth embodiment described above, the accumulated energy is slightly reduced, but the length of contact between both active materials is long, and the internal resistance can be reduced. The volume of the comb teeth of the negative electrode active material and that of the positive electrode active material are designed to be substantially the same. Although the figure shows a case where there are two pairs of comb teeth, the number of comb teeth is not limited to this, and can be increased as necessary.

Therefore, according to this embodiment, a positive electrode active material and a negative electrode active material are disposed on one surface of a single silicon substrate, and a lithium ion battery having a relatively low internal resistance is produced even in a structure that does not face each other. be able to.

FIG. 8 shows a cross-sectional view of an eighth example according to the second embodiment of the present invention, in which a gelled electrolytic solution is used and sealing is simply performed with a resin.

As shown in FIG. 8, a silicon substrate 851 having a plurality of deep inverted trapezoidal grooves 800 and 850 on the main surface is covered with a silicon oxide film 852. The silicon substrate 851 is provided with a surface electrode 853 and a through electrode 854 in advance. Further, on the back surface of the silicon substrate 851, a semiconductor integrated circuit, a MEMS sensor, and an energy harvesting device are built in advance as shown by a region 892 surrounded by a broken line, and connected to the surface electrode 853 by a metal wiring 893. Yes.

The gold electrode 855 is a positive electrode, and is wired from the bottom surface of the outer inverted trapezoidal groove 850 to the surface of the silicon substrate 851, and the positive active material 856 is embedded in the outer deep inverted trapezoidal groove 850. Yes. The gold electrode 805 is a negative electrode and is provided on at least the bottom surface of the inner deep inverted trapezoidal groove 800, and at least a part of the oxide film on the bottom surface of the inner inverted trapezoidal groove 800 is removed. A negative active material 806 is embedded in the deep inverted trapezoidal groove 800 inside.

A bank 807 for applying the electrolytic solution is formed on the main surface of the silicon substrate 851. The bank 807 can be formed using a photosensitive epoxy resin (for example, SU-8 manufactured by Nippon Kayaku Co., Ltd.). After the electrolytic solution 898 is applied and gelled, it is sealed with an ultraviolet curable resin 808. The aforementioned photosensitive epoxy resin can also be used in place of the ultraviolet curable resin. The photosensitive epoxy resin has a film type and is easy to paste. It can also be hardened by heating to about 95 ° C.

According to the present embodiment, a MEMS type lithium ion battery can be formed on the back side of a silicon substrate on which a semiconductor integrated circuit, a MEMS sensor, and an energy harvesting device are integrated. Is considered wide.

(Third embodiment)

In the third aspect of the present invention, one of the active materials is provided on the main surface of one silicon substrate, and the other active material is laminated on the upper side. Close to.

A cross-sectional view and a plan view of the ninth example according to the third embodiment of the present invention are shown in FIG. 9 (a) and FIG. 9 (b). 9A is a cross-sectional view taken along line AA ′ in FIG. 9B, and a right cross-sectional view shown in FIG. 9A is taken along line OB ′ in FIG. 9B. Each of the cross sections is shown.

As shown in FIG. 9 (a), a silicon substrate 901 having a deep inverted trapezoidal groove 900 on the main surface is covered with a silicon oxide film 902. The gold electrode 905 is a negative electrode, and is wired from the bottom surface of the deep inverted trapezoidal groove 900 to the surface of the silicon substrate 901. An active material 906 having a negative electrode is embedded in the deep inverted trapezoidal groove 900 of the silicon substrate 901.

The insulating layer 907 formed on almost the entire surface of the silicon substrate 901 has a structure of maintaining a constant distance between the negative electrode active material 906 and the positive electrode active material 956, and at least the negative electrode active material 906 and the positive electrode The active material 956 has a columnar structure. The insulating layer 907 may be a low-temperature CVD oxide film or a photosensitive epoxy resin. It is desirable to use a shaped plate-like solid as the positive electrode active material 956, and the insulating layer 908 is a support for positioning and fixing the positive electrode active material 956 in the planar direction. The insulating layer 908 is preferably made of a photosensitive epoxy resin and has a thickness similar to that of the positive electrode active material 956. The outermost insulating layer 909 is a protective film made of a photosensitive epoxy resin and seals the battery structure of this example. There is an opening on the positive electrode active material 956 and the negative gold electrode 905. Gold electrodes 910 and 910 ′ are provided.

Further, the insulating layer 909 has another through-hole 997, and an electrolyte solution 998 is injected from the through-hole 995, and the through-hole 995 is sealed with an ultraviolet curable resin 999.

As shown in FIG. 9 (b), when the planar arrangement of this example is viewed from the main surface side of the silicon substrate 901, the central gold electrode 910 in the drawing is connected to the surface of the positive electrode active material 956. The gold electrode 910 ′ on the A side in the figure is connected to the gold electrode 905 connected to the negative electrode active material to become the negative electrode.

On the other hand, two or more through-holes 997 for injecting electrolysis 998 are provided in the BB ′ direction in the drawing so as not to interfere with the electrode position. Thus, by arranging the gold electrode 910 ′ and the through hole 997 for injecting the electrolyte in a direction different by 90 ° on the plane, the electrolyte can be injected after all the structures are constructed.

The reason why two or more are necessary is that at least one of them is for venting the gas when the electrolyte is injected. The electrolytic solution 998 is also sealed by an insulating layer 907 provided on the outer periphery of the silicon substrate so as not to come into contact with air, and the through hole 997 is sealed with an ultraviolet curable resin 999.

According to this embodiment, the lithium ion battery can be formed on the same surface of the same substrate as the semiconductor heavy duty circuit, the MEMS sensor, the energy harvesting device and the like.

(Common to the first to third embodiments)

FIG. 10 shows a cross-sectional view of a tenth example having a structure for increasing the adhesion of the electrode material to the substrate in common with the first to third embodiments of the present invention.

A silicon substrate 1001 having a deep inverted trapezoidal groove 1000 on the main surface is covered with a silicon oxide film 1002. The gold electrode 1005 is one electrode, and is wired from the bottom surface of the deep inverted trapezoidal groove 1000 to the main surface of the silicon substrate 901. An active material 1006 for an electrode is embedded in the deep inverted trapezoidal groove 1000 of the silicon substrate 1001. On the bottom surface of the deep inverted trapezoidal groove 1000, a groove 1009 having a reverse taper is provided. Since the electrode active material 1006 also enters into the groove 1009 on the reverse taper, the active material of the electrode can be firmly fixed in the deep trapezoidal groove 1000 by increasing the reverse taper structure and the contact area. . The structure of this embodiment can be applied to all the first to ninth embodiments.

The MEMS type lithium ion battery of the present invention can be used mainly in the industrial field of mobile and wearable electronic devices. Integration with semiconductor integrated circuits, MEMS sensors, and energy harvesting devices enables ultra-small electronic circuits that can be charged when rechargeable and can be operated whenever necessary, so they can be used in a wide range of industrial fields. Is big. The manufacturing method according to the present invention is likely to be mass-produced on a large-diameter Si wafer at a low cost in the same way as a semiconductor integrated circuit, and a large number of power-free mobile and wearable products integrated with LSIs and sensors. It becomes possible to provide.

Sectional view of the first embodiment according to the first aspect of the present invention The top view of the 1st Example concerning the 1st mode of the present invention Sectional drawing of 2nd Example which concerns on 1st aspect of this invention Sectional drawing of 3rd Example based on 1st aspect of this invention Sectional drawing of the 4th Example concerning the 1st mode of the present invention Sectional drawing of 5th Example based on 1st aspect of this invention Sectional drawing of the 6th Example concerning the 2nd mode of the present invention The top view of the 6th example concerning the 2nd mode of the present invention. Sectional drawing of 7th Example based on the 2nd aspect of this invention The top view of the 7th example concerning the 2nd mode of the present invention. Sectional drawing of the 8th Example which concerns on the 2nd aspect of this invention Sectional drawing of 9th Example based on 3rd aspect of this invention The top view of the 9th Example concerning the 3rd mode of the present invention. Sectional drawing of 10th Example common to the 1st-3rd aspect of this invention

Deep inverted trapezoidal groove on the lower side ... 100, 200, 300, 400, 500-1, 500-2, 600, 700, 800, 900, 1000
Lower silicon substrate ... 101, 201, 301, 401, 501, 601, 701, 901, 1001
Oxide film covering lower silicon substrate ... 102, 202, 302, 402, 502, 602, 702, 902, 1002
Negative (lower) gold electrode ... 105, 205, 305, 405, 505-1, 505-2, 605, 705, 805, 905, 1005
Top and bottom connection (bottom) gold electrode ... 105 ', 205', 305 ', 405', 505 ', 605', 705 '
Top / bottom bonding (bottom) gold electrode ... 105 ", 205", 305 ", 405", 505 ", 605", 705 "
Negative electrode active material ... 106, 206, 306, 406, 506-1, 506-2, 606, 706, 806, 906, 1006
Insulation film bank ... 807
UV-cured epoxy resin lid ... 808
Insulating film spacer ... 907
Positioning insulation film ... 908
Protective film with insulating layer ... 909
Reverse taper groove ... 1009
Surface positive electrode ... 910
Surface negative electrode ... 910 '
Upper deep inverted trapezoidal groove ... 150, 250, 350, 450, 550-1, 550-2,650, 750, 850, 950
Upper silicon substrate ... 151, 251, 351, 451, 551, 651, 751, 851
Oxide film covering upper silicon substrate ... 152, 252, 352, 452, 552, 652, 752, 852
Positive side through electrode ... 253, 303, 453, 553, 653, 753, 853
Negative through electrode ... 253 ', 303', 453 ', 553', 653 ', 753', 853 '
Front side positive electrode ... 254, 304, 454, 554, 654, 754, 854
Front side negative electrode 254 ', 304', 454 ', 554', 654 ', 754'854'
Positive (upper) gold electrode ... 155, 255, 355, 455, 555-1, 555-2, 655, 755, 855, 955
Vertical connection (upper side) gold electrode ...... 155 ', 255', 355 ', 455', 555 ', 655', 755 '
Top / bottom bonding (upper) gold electrode ... 155 ", 255", 355 ", 455", 555 ", 655", 755 "
Positive electrode active material ... 156, 256, 356, 456, 556-1, 556-2,656, 756, 856, 956
Semiconductor integrated circuits, MEMS sensors, energy harvesting devices, etc .... 492, 692, 892
Metal wiring to semiconductor integrated circuits, etc .... 493, 493 ', 693, 693', 893, 893 '
Top and bottom connection gold particle layer ... 195, 295, 395, 495, 595-1, 595-2, 695, 795
Separate upper and lower connection gold particle layers ... 195 ', 295', 395 ', 495', 595 ', 695', 795 '
Upper and lower bonded gold particle layers ... 195 ", 295", 395 ", 495", 595 ", 695", 795 "
Through hole for electrode ... 196
Through hole ... 197, 297, 397, 497, 997
Electrolyte ... 198, 298, 398, 498, 598-1, 598-2, 698, 798, 898, 998
UV curable epoxy resin ... 199, 299, 399, 499, 599, 699, 799, 899, 999

Claims (11)

A structure in which a positive electrode, a negative electrode, and a structure that forms a cavity with a constant interval between the positive electrode and the negative electrode are stacked on at least one solid substrate, and the cavity is provided on a surface of the structure. A lithium ion battery, wherein the lithium ion battery is in communication with an opening and an electrolyte is placed in the cavity.   A positive electrode and a negative electrode are formed side by side on the same plane on a single solid substrate, and a structure is formed in which a cavity is formed between the positive electrode and the negative electrode, and the cavity is formed on the surface of the structure. A lithium ion battery, wherein the lithium ion battery is in communication with the provided opening and an electrolyte is placed in the cavity.   At least one of a semiconductor integrated circuit, a MEMS sensor, or an energy harvesting device is formed on at least one solid substrate, and a positive electrode, a negative electrode, and the positive electrode on the at least one solid substrate A structure having a structure in which cavities having a constant interval are formed between the negative electrodes; the cavity communicates with an opening provided on a surface of the structure; and an electrolyte is placed in the cavity Lithium ion battery characterized by At least one of a semiconductor integrated circuit, a MEMS sensor, or an energy harvesting device is formed on one solid substrate, and a positive electrode and a negative electrode are formed side by side on the same plane of the one solid substrate. Both have a structure that forms a cavity with a constant interval between the positive electrode and the negative electrode, and the cavity communicates with an opening provided on the surface of the structure, and an electrolyte is put into the cavity. The lithium ion battery characterized by the above-mentioned.   And at least a part of the positive electrode metal electrode pattern and at least a part of the negative electrode metal electrode pattern are on the same plane, and the both are arranged to face each other in a straight line direction on the plane, The lithium ion battery according to claim 1, further comprising a plurality of the openings in a direction substantially orthogonal to the straight line direction.   6. The lithium ion battery according to claim 1, wherein at least one of the positive electrode and the negative electrode is formed in a groove provided on the solid substrate.   Either the positive electrode or the negative electrode is formed in a groove provided on one surface of the solid substrate, and the other of the positive electrode or the negative electrode is provided on one surface on another solid substrate. 5. The lithium ion battery according to claim 1, wherein the two solid substrates are joined so that the positive electrode and the negative electrode face each other. .   The positive electrode is made of manganese (Mn) -lithium (Li) ceramic and a binder, the negative electrode is made of carbon (C) fine powder and the binder or another binder, and the electrolytic solution is ethylene carbonate. The lithium ion battery according to any one of claims 1 to 4. The lithium ion battery according to claim 1, wherein the electrolytic solution is gelled ethylene carbonate.   The lithium ion battery according to claim 8, wherein the binder or the another binder is an imide-based material. The lithium ion battery according to claim 1, wherein the solid substrate is silicon.

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