JP2017032476A - Method for manufacturing structure with high aspect ratio and method for manufacturing ultrasonic probe - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure with a high aspect ratio having a side face perpendicular to a major surface of a substrate by wet etching, and a method for manufacturing an ultrasonic probe.SOLUTION: The method for manufacturing a structure with a high aspect ratio includes: a hole forming step of forming a plurality of holes on one major surface of a substrate 13a; a resist forming step of, after finishing the hole forming step, forming a first region where a resist layer is laid and a second region where the resist layer is not laid on the major surface where the plurality of holes is formed; and a recess forming step of immersing the substrate 13a in an etching solution 16 that can dissolve the substrate 13a to form a recess 134 in the substrate 13a in a portion corresponding to the second region.SELECTED DRAWING: Figure 10

Description

  The present invention relates to a method for manufacturing a high aspect ratio structure such as an X-ray metal grating for receiving X-rays or a mold for manufacturing an ultrasonic probe, and a method for manufacturing an ultrasonic probe.

  For example, X-ray metal gratings that receive X-rays are used in various devices as elements having a large number of parallel periodic structures. In recent years, application to X-ray imaging devices has also been attempted. In recent years, X-ray phase imaging has attracted attention in this X-ray imaging apparatus from the viewpoint of reducing the amount of exposure. In this case, as the X-ray grating, an absorption grating having a firm contrast that transmits or does not transmit X-rays and a phase grating having a firm phase difference are required. To achieve this, a high aspect ratio grating with a very high aspect ratio is required. Therefore, a manufacturing method using silicon processing applying semiconductor processing technology has been proposed. For example, Patent Document 1 discloses a method for manufacturing a metal grid. The method for manufacturing a metal grid disclosed in Patent Document 1 is a method of forming a recess (slit) using a dry etching apparatus and then embedding a metal in the recess.

International Publication No. 2012/008118

  However, the dry etching apparatus is expensive, and in Patent Document 1, since it is necessary to use an expensive dry etching apparatus, the manufacturing cost increases. In particular, when dry etching is performed on a large area substrate of 8 inches or more, the cost becomes higher.

  In such a case, a method of forming a lattice by wet etching that can be processed at a lower cost is conceivable. However, when forming a lattice by wet etching, there are the following problems.

  For example, in the case where the concave portion is formed by general wet etching, as shown in FIGS. 29A and 29B, the concave portion forming portion on one main surface of the substrate 1000 on which the concave portion is formed by patterning means such as photolithography. After the other portions are covered with the resist 1001, the substrate 1000 is immersed in an etching solution 1002 having an action of dissolving, and the portions not covered with the resist 1001 are dissolved. However, as shown in FIG. 29C, when a concave portion is formed at a position adjacent to the resist 1001, the dissolving action by the etching solution 1002 is generally isotropic, so that the bottom surface of the resist 1001 is reached. There is a problem that the liquid wraps around, undercuts, and becomes a recess 1003 having a side surface inclined with respect to the main surface, making it difficult to form a recess having a side surface perpendicular to the main surface.

  The present invention has been made in view of the above circumstances, and its object is to provide a method for manufacturing a high aspect ratio structure having a recess having a side surface perpendicular to the main surface of a substrate by wet etching, and an ultrasonic probe. It is to provide a manufacturing method.

  As a result of various studies, the present inventor has found that the above object is achieved by the present invention described below. That is, the manufacturing method of the high aspect ratio structure according to one aspect of the present invention includes a hole forming step of forming a plurality of holes in at least one main surface of the substrate, and the plurality of holes after completion of the hole forming step. A resist forming step for forming a first region in which a resist layer is disposed and a second region in which the resist layer is not disposed on the main surface on which the resist layer is formed; A recess forming step of forming a recess in the substrate corresponding to two regions. Here, the high aspect ratio means an aspect ratio of 5 or more.

  In such a method of manufacturing a high aspect ratio structure, for example, a plurality of holes extending perpendicularly to the main surface of the substrate (normal direction) are formed on the main surface of the substrate, and then the plurality of holes are etched. Infiltrate the liquid. Thereby, the melting proceeds in the direction perpendicular to the depth direction of each hole, and the partition between the holes can be removed, and the substrate corresponding to the second region is perpendicular to the main surface of the substrate. A recess having a side surface can be formed. Therefore, the high aspect ratio structure manufacturing method can easily manufacture, for example, a diffraction grating having a recess having a side surface perpendicular to the main surface of the substrate, particularly a phase type diffraction grating, at a low cost. The ultrasonic probe manufacturing mold used when manufacturing the ultrasonic probe can be easily manufactured at low cost. In addition, the manufacturing method of the high aspect ratio structure can form an X-ray absorption part by embedding an X-ray absorbing material having a high X-ray absorption rate in the recess, and easily manufactures an absorption type diffraction grating at a low cost. it can.

  According to another aspect, in the method for manufacturing a high aspect ratio structure, the hole forming step is performed by an anodic oxidation method or an anodizing method.

  Such a method for producing a high aspect ratio structure of an X-ray metal grating can easily form a plurality of holes perpendicular to the main surface on the main surface of the substrate.

  According to another aspect, in the above-described method for manufacturing a high aspect ratio structure, the substrate is aluminum, tungsten, molybdenum, silicon, gallium arsenide, or indium phosphide.

  In the manufacturing method of such a high aspect ratio structure, when the substrate is made of aluminum, tungsten, molybdenum, silicon, gallium arsenide, or indium phosphide, for example, a plurality of layers extending perpendicularly to the main surface by an anodic oxidation method or anodizing method are used. Can be easily formed.

  According to another aspect, the method for manufacturing a high aspect ratio structure described above further comprises an X-ray absorbing material burying step of burying an X-ray absorbing material capable of X-ray absorption in the recess. Features.

  In the manufacturing method of such a high aspect ratio structure, an X-ray absorbing portion can be formed by forming a recess in a substrate corresponding to the first region and embedding an X-ray absorbing material in the recess. A part having a plurality of holes in the substrate corresponding to the region can be made an X-ray transmission part.

  According to another aspect, in the method for manufacturing a high aspect ratio structure, the X-ray absorbing material burying step embeds a metal which is an X-ray absorbing material by electroforming. .

  In such a method for producing a high aspect ratio structure, the X-ray absorbing material can be easily and reliably embedded in the recess by embedding a metal which is an X-ray absorbing material by electroforming.

  In another aspect, in the method for manufacturing a high aspect ratio structure, the high aspect ratio structure is an X-ray metal grating used in an X-ray Talbot interferometer or an X-ray Talbot-low interferometer. It is characterized by being.

  The manufacturing method of such a high aspect ratio structure is a high performance metal for X-rays of 0th grid, 1st grid, and 2nd grid used for X-ray Talbot interferometer or X-ray Talbot-low interferometer. Can produce gratings.

  In the method for manufacturing a high aspect ratio structure according to another aspect of the present invention, the high aspect ratio structure is an ultrasonic probe manufacturing mold used for manufacturing an ultrasonic probe. And

  Such a method for manufacturing a high aspect ratio structure can easily manufacture an ultrasonic probe manufacturing mold used in manufacturing an ultrasonic probe at low cost.

  The ultrasonic probe manufacturing method according to one aspect of the present invention is a method of forming a mold having a concave portion for a mold by filling a concave portion formed in the ultrasonic probe manufacturing die with a metal. A resin mold forming step of forming a resin mold having a resin mold recess by filling a resin filler made of a resin material into the mold recess of the mold, and a piezoelectric in the resin mold recess of the resin mold A microstructure forming step of filling a slurry containing an element to form a microstructure having a structure recess, and a piezoelectric layer made of the piezoelectric material by filling the structure recess of the microstructure with a synthetic resin. And an ultrasonic probe main body forming step of forming an ultrasonic probe main body in which synthetic resin layers made of a synthetic resin are alternately arrayed.

  Such an ultrasonic probe manufacturing method is based on an ultrasonic probe manufacturing mold having a plurality of concave portions each having a side surface perpendicular to one main surface of a substrate by wet etching. The ultrasonic probe main bodies arranged in an alternating array can be formed, and can be manufactured at low cost.

  The method for manufacturing a high aspect ratio structure and the method for manufacturing an ultrasonic probe according to the present invention can have a recess having a side surface perpendicular to the main surface of the substrate by wet etching.

It is a perspective view which shows the structure of the metal grating | lattice for X-rays of 1st Embodiment which is an example manufactured with the manufacturing method of the high aspect ratio structure of this invention. FIG. 3 is a view (No. 1) for describing the method for manufacturing the X-ray metal grating of the first embodiment of FIG. 1; FIG. 8 is a diagram (No. 2) for explaining the method of producing the X-ray metal grating of the first embodiment of FIG. FIG. 8 is a view (No. 3) for explaining the method of manufacturing the metal grating for X-ray according to the first embodiment of FIG. 1; FIG. 6 is a view (No. 4) for explaining the production method of the X-ray metal grating of the first embodiment of FIG. 1; FIG. 7 is a view (No. 5) for explaining the method of manufacturing the metal grating for X-ray according to the first embodiment of FIG. 1; FIG. 6 is a view (No. 6) for explaining the method of manufacturing the metal grating for X-ray according to the first embodiment of FIG. 1; FIG. 7 is a view (No. 7) for explaining the method of manufacturing the metal grating for X-ray according to the first embodiment of FIG. 1; It is an enlarged view of the principal part of FIG. It is explanatory drawing at the time of forming a recessed part in the metal grid for X-rays of 1st Embodiment of FIG. When the recesses are formed in the X-ray metal grid according to the first embodiment of FIG. 1, the partition adjacent to the portion corresponding to the second area in the first area of the substrate used for the X-ray metal grid is melted. It is explanatory drawing of. It is a figure for demonstrating the anodic oxidation method which forms a some hole in a metal substrate. As an example, it is a figure which shows the upper surface of the metal substrate in which the several hole was formed by the anodic oxidation method. It is a perspective view of the modification of the metal grating | lattice for X-rays of 1st Embodiment. It is a figure for demonstrating the manufacturing method of the modification of the metal grating | lattice for X-rays of FIG. It is a figure for demonstrating the vignetting of the X-ray radiated | emitted from the X-ray source in the metal grating | lattice for X-rays. It is a perspective view which shows the structure of the Talbot interferometer for X-rays in 2nd Embodiment. It is a top view which shows the structure of the Talbot low interferometer for X-rays in 3rd Embodiment. It is explanatory drawing which shows the structure of the X-ray imaging device in 4th Embodiment. It is sectional drawing of the type | mold for ultrasonic probe manufacture of 6th Embodiment which is an example manufactured with the manufacturing method of the high aspect ratio structure of this invention. It is sectional drawing at the time of forming a metal mold | die using the type | mold for ultrasonic probe manufacture manufactured with the manufacturing method of the high aspect ratio structure of this invention. It is sectional drawing of the metal mold | die of FIG. It is sectional drawing at the time of forming a resin type | mold using the metal mold | die of FIG. It is sectional drawing of the resin type | mold of FIG. It is sectional drawing at the time of forming a lead zirconate titanate sintered compact using the resin type | mold of FIG. It is sectional drawing of the lead zirconate titanate sintered compact of FIG. It is sectional drawing at the time of filling the epoxy resin in the sintered compact recessed part provided in the lead zirconate titanate sintered compact of FIG. It is sectional drawing of the principal part of the ultrasonic probe formed from the state of FIG. It is explanatory drawing in the case of making the grating | lattice by the conventional wet etching.

  Hereinafter, an embodiment according to the present invention will be described with reference to the drawings. In addition, the structure which attached | subjected the same code | symbol in each figure shows that it is the same structure, The description is abbreviate | omitted suitably. Further, in this specification, when referring generically, it is indicated by a reference symbol without a suffix, and when referring to an individual configuration, it is indicated by a reference symbol with a suffix.

(First embodiment, X-ray metal grid)
FIG. 1 is a perspective view showing a configuration of an X-ray metal grating, which is an example manufactured by the method for manufacturing a high aspect ratio structure of the present invention. As shown in FIG. 1, the metal grid 1a includes a grid region 10a and a frame region 12a provided on the X-ray metal substrate 13a. The lattice region 10a is a region where the lattice 11a is formed, and the frame region 12a is provided around the lattice region 10a so as to surround the lattice region 10a.

  When the rectangular coordinate system of DxDyDz is set as shown in FIG. 1, the lattice 11a has a predetermined thickness (depth) H1 (Dz direction perpendicular to the lattice plane DxDy (normal direction of the lattice plane DxDy)). A plurality of X-ray absorbing portions 111a having a length and extending linearly in one direction Dx, and a plurality of X-ray transmitting portions 112a extending linearly in the one direction Dx. The portions 111a and the plurality of X-ray transmissive portions 112a are alternately arranged in parallel. For this reason, the plurality of X-ray absorbers 111a are respectively arranged at predetermined intervals in a direction Dy orthogonal to the one direction Dx. In other words, the plurality of X-ray absorbers 111a are arranged at predetermined intervals in a direction Dy orthogonal to the one direction Dx. The predetermined interval (pitch) P is constant in this embodiment. That is, the plurality of X-ray absorbers 111a are arranged at equal intervals P in the direction Dy orthogonal to the one direction Dx. In the present embodiment, the X-ray absorber 111a has a plate shape or a layer shape along the DxDz plane orthogonal to the DxDy plane, and the plurality of X-ray transparent portions 112a are adjacent to the adjacent X-ray absorbers 111a. It has a plate shape or a layer shape along the DxDz plane sandwiched.

  The plurality of X-ray absorption units 111a function to absorb X-rays, and the X-ray transmission units 112a function to transmit X-rays. For this reason, such an X-ray metal grating 1a has, as one aspect, a normal grating in which the pitch P is sufficiently long with respect to the wavelength of the X-ray and does not generate interference fringes, for example, the first in an X-ray Talbot-Lau interferometer. It can be used as a zero lattice. In addition, as another aspect, the X-ray metal grating 1a functions as a diffraction grating by appropriately setting the predetermined interval P according to the wavelength of the X-ray. For example, the X-ray Talbot -It can be used as a first grating and a second grating in a low interferometer and an X-ray Talbot interferometer. The X-ray absorbing portion 111a has an appropriate thickness H1 so that X-rays can be sufficiently absorbed according to specifications, for example. Since X-rays are generally highly transmissive, as a result, the ratio of the thickness H1 to the width W (aspect ratio = thickness / width) in the X-ray absorber 111a is, for example, a high aspect ratio of 5 or more. Has been. The width W in the X-ray absorber 111a is the length in the X-ray absorber 111a in the direction (width direction) Dy orthogonal to the one direction (long direction) Dx, and the thickness H1 is equal to the one direction Dx. And the length DxDy 111a in the normal direction (depth direction) Dz of the plane DxDy constituted by the direction Dy orthogonal to the direction Dy.

  In such an X-ray metal grid 1a, a hole forming step for forming a hole group having a plurality of holes on at least one main surface of the metal substrate, and the hole group is formed after the hole forming step is completed. A resist forming step for forming a first region in which a resist layer is disposed and a second region in which the resist layer is not disposed on the surface, and the substrate is immersed in a dissolvable etching solution to form the first region. Manufactured by a recess forming step for forming a recess in the substrate corresponding to two regions and an X-ray absorbing material embedding step for embedding an X-ray absorbing material in the recess. The concave portion is, for example, a slit groove in a one-dimensional lattice, and a columnar hole (columnar hole) in a two-dimensional lattice. Hereinafter, the manufacturing method of the said X-ray metal lattice 1a whose said recessed part is a slit groove | channel is explained in full detail. The same applies even if the recess has another shape such as a columnar hole.

  2 to 11 are views for explaining a method of manufacturing the X-ray metal grating in the first embodiment. 2A to 8B, each manufacturing process is schematically described with one set of FIGS. 2A and 2B. FIG. 2A is a cross-sectional view of FIG. B) is a top view. FIG. 9 is an enlarged view of the main part of FIG. 6, and FIGS. 10A to 10D are explanatory diagrams when forming the recesses. Moreover, FIG. 11 is explanatory drawing when the partition of the part corresponding to the 1st area | region adjacent to the part corresponding to the 2nd area | region in a board | substrate melt | dissolved. Moreover, FIG. 12 is a figure for demonstrating the anodic oxidation method which forms a some hole in a metal substrate. FIG. 13 is a diagram showing an upper surface of a metal substrate on which a plurality of holes are formed by an anodic oxidation method as an example.

  In order to manufacture the X-ray metal grid 1a in the first embodiment, first, a plate-shaped metal substrate (substrate) 13a is prepared (FIGS. 2A and 2B). The metal substrate 13a is formed of a metal (including an alloy and a compound) that can form a plurality of holes by an anodic oxidation method or anodizing method. In this manufacturing method, as will be described later, the portion that has undergone the anodic oxidation step becomes the X-ray transmitting portion 112a of the lattice 11a, and therefore the metal substrate 13a is made of a metal (including an alloy) that has a relatively high transmittance with respect to X-rays. ) Is preferred. From the viewpoints of these anodic oxidation methods and high X-ray transparency (X-ray transmission characteristics), the metal substrate 13a is preferably, for example, aluminum (Al). In this example, the metal substrate 13a is made of aluminum.

Next, a quartz (silicon dioxide, SiO ₂ ) film is formed as a resist layer 131 on one main surface of the metal substrate 13a as shown in FIG. This quartz film is formed by various film forming methods such as chemical vapor deposition (CVD) and sputtering, which are known conventional means. For example, in the embodiment, the quartz film is formed by plasma CVD using tetraethoxysilane. More specifically, first, tetraethoxysilane (TetraethoxySilane, TEOS), which is a kind of organic silane, is heated and bubbled with a carrier gas to generate TEOS gas. The TEOS gas is oxidized with, for example, oxygen or ozone. A gas and a diluent gas such as helium are mixed to generate a raw material gas. Then, this source gas is introduced into, for example, a plasma CVD apparatus, and a quartz film 131 having a predetermined thickness (2 μm in this embodiment) is formed on the surface of the metal substrate 13a in the plasma CVD apparatus.

  In the above description, the resist layer 131 is a quartz film, but is not limited thereto. Since the resist layer 131 is a protective layer that functions as a protective film for the metal substrate 13a against the acidic solution used in the anodic oxidation method when the anodic oxidation method is performed in the anodic oxidation step, the resist layer 131 is For example, it may be formed of a dielectric material such as silicon nitride (SiN) or a metal film.

  Next, a hole group 132 having a plurality of holes is formed on the other main surface of the metal substrate 13a by an anodic oxidation method (anodic oxidation step, FIGS. 4A and 4B).

  More specifically, in this anodic oxidation step, as shown in FIG. 12, for example, the anode of the power source 21 is connected to the metal substrate 13a on which the resist layer 131 is formed so as to be energized, and the cathode of the power source 21 The cathode electrode 22 and the metal substrate 13a connected to are immersed in the electrolytic solution 24 in the water tank 23 in which the electrolytic solution 24 is stored. At that time, the cathode electrode 22 and the other main surface (surface without the resist layer 131) of the metal substrate 13a are immersed so as to face each other. The electrolytic solution 24 is preferably an acidic solution that has a strong oxidizing power and dissolves a metal oxide film produced by an anodic oxidation method, for example, an etching solution such as phosphoric acid and oxalic acid. The cathode electrode 22 is preferably formed of a metal that does not dissolve in the electrolytic solution 24, such as gold (Au) and platinum (Pt). In one example, the electrolytic solution 24 is a 0.1 M (molar concentration, mol / l) oxalic acid solution and the cathode electrode 22 is a platinum plate plated titanium with respect to the metal substrate 13a formed of aluminum. . When energized, a plurality of holes 13c extending from the surface 13e of the metal substrate 13a toward the inside are formed. In this embodiment, when energized, as shown in FIGS. 4 and 9, a plurality of holes extending from the surface 13e of the metal substrate 13a in the thickness direction (Dz direction, direction perpendicular to the surface) of the metal substrate 13a are mutually connected. Formed at intervals. In one example, when a DC voltage of about 20 V is applied between the cathode electrode 22 and the metal substrate 13a for about 10 hours, a plurality of holes having a diameter φ of about 20 nm and a depth H1 of about 80 μm are average pitch distance. The ps were formed with a spacing of about 60 nm. An example of the top surface is shown in FIG. In FIG. 13, a photograph taken by a scanning electron microscope (SEM) is shown as a drawing.

  Next, a dry film resist is bonded to the surface of the metal substrate 13a in which the hole group 132 is formed (FIGS. 5A and 5B), and a period of 5.3 μm and a duty ratio of 50 using a photolithography technique. A resist layer 133 is formed of a dry film resist having a% line and space pattern (FIGS. 6A and 6B). As a result, the first region 141 in which the resist layer 133 is disposed and the second region 142 in which the resist layer 133 is not disposed are formed on the surface of the metal substrate 13a in which the hole group 132 is formed (resist formation). Process).

  Next, the metal substrate 13a on which the resist layer 133 is formed is immersed in a 5 vol% phosphoric acid solution (etching solution 16) and left for 240 minutes. At this time, after immersing the metal substrate 13a, within a few seconds to a few minutes, as shown in FIGS. 10A, 10B, and 10C, the holes 13c of the hole group 132 exposed by the photolithography patterning described above are bonded to the holes 13c. The acid solution 16 penetrates.

  After that, in the hole 13c filled with the phosphoric acid solution 16, all of the remaining time (≈240 minutes) is spent, and as shown in FIG. The partition wall 13d between the two holes 13c is dissolved. Thereby, the recessed part 134 is formed in the board | substrate 13a corresponding to the 2nd area | region 142 (recessed part formation process, FIG. 7).

  At that time, the phosphoric acid concentration of the phosphoric acid solution 16 is set so that the time required for the phosphoric acid solution 16 to penetrate into the hole 13c is shorter than the time required for the phosphoric acid solution 16 to completely dissolve the partition wall 13d. (Time for the phosphoric acid solution 16 to penetrate into the hole 13c <time for the phosphoric acid solution 16 to finish dissolving the partition wall 13d). Accordingly, the partition wall 13d is dissolved from both sides by the etching action, dissolved by 20 nm (half of the partition wall thickness) from both sides, and the partition wall 13d disappears when penetrating, so when the partition wall 13d disappears, the resist In the portion corresponding to the first region 141 blocked by the layer 133, the partition 13d adjacent to the portion corresponding to the second region 142 should still remain for 20 nm, which is half the thickness. Even if etching is further performed in this state, the remaining 20 nm is not lost unless a long time of 240 minutes is taken. Even if the etching is extremely excessive and disappears, since the average pitch distance between the holes 13c is 60 nm, the width of the recess 134 is widened by 120 nm at the maximum, so that there is no practical error. Can be considered.

  Further, even if the etching is performed excessively, as shown in FIG. 11, it corresponds to the second region 141 in the portion of the partition wall 13d corresponding to the first region 141 to the extent that one period of the hole 13c is excessively etched. The partition wall 13d adjacent to the portion is etched.

  In this example, since the phosphoric acid solution 16 having a very low concentration of 5 vol% is used, the time is 240 minutes. For example, in the case of the 15 vol% phosphoric acid solution 16, the time is about 70 minutes. Shorter. Even in this case, at the initial stage of etching, since the etching solution (= phosphoric acid solution 16) is sufficiently filled in the hole 13c, it takes 70 minutes to etch for another period, so that the controllability is improved. It is unlikely to be lost significantly.

  In this example, a resist layer 131 made of a quartz film is formed in advance on one main surface so that the hole group 132 formed by anodization is formed only on the other main surface. In order to suppress the change, the hole group 132 may be formed on both of the main surfaces. In this case, after forming the hole group 132 on both surfaces, the surface that is not the surface to be patterned may be cured by, for example, coating quartz with a technique such as TEOS-CVD.

  Next, an X-ray absorbing material 135 capable of absorbing X-rays is embedded in the recess 134 (X-ray absorbing material embedding step, FIG. 8). In this embodiment, since the side wall of the recess 134 is made of aluminum oxide (insulator) and the bottom is made of aluminum (conductive material), bottom-up electroplating (electroforming) from the bottom is possible. Therefore, in this embodiment, gold is selected as the X-ray absorbing material 135, and gold is embedded in the recess 134 by plating. In this example, gold is used as the plating material. However, a metal that can be plated, such as platinum, rhodium, and iridium, having high X-ray absorption, may be selected. Alternatively, a method of pouring gold powder or the like into the recess 134 may be used. As a result, the X-ray absorbing material 135 is embedded in the concave portion 134 to form the X-ray absorbing portion 111a.

  Further, in the method for manufacturing the X-ray metal grid 1a in the first embodiment, each of the plurality of holes extends in the thickness direction of the metal substrate 13a. The formation of the plurality of holes by the anodic oxidation method can be formed relatively long, for example, several hundred micrometers. For this reason, in the manufacturing method of the X-ray metal grating 1a in the first embodiment, the plurality of holes are extended in the thickness direction of the metal substrate 13a, so that the X-ray transmission part 112a having a high aspect ratio of, for example, 5 or more is formed. it can.

  In the above embodiment, the absorption grating is manufactured by embedding the X-ray absorbing material in the recess. However, in the case of the phase grating, the X-ray absorption material can be used in a state where the recess having an appropriate depth is formed.

  Further, in the above embodiment, the plate-like portion 17 in which the X-ray absorbing portion 111a and the X-ray transmitting portion 112a are not formed is provided on one side of the metal substrate 13a. However, as shown in FIG. The support portion 14 having a high X-ray transmittance may be disposed on the side opposite to the plate-like portion 17 in the metal substrate 13a.

  Specifically, for example, after the X-ray absorbing material is embedded in the concave portion 134 to form the X-ray absorbing portion 111a, the X-ray absorbing portion 111a is formed on one side of the metal substrate 13a opposite to the plate-like portion 17 as shown in FIG. Another support substrate 14 having higher permeability than the metal substrate 13a (aluminum in the above embodiment) as a base material, such as an acrylic plate, is bonded to the wire with an adhesive or the like. Further, the plate portion 17 side of the metal substrate 13a is polished to remove the plate portion 17. Thus, an X-ray metal grating 1a having a support substrate 14 having a high X-ray transmittance, which is different from the metal substrate 13a shown in FIG. In this way, the X-ray transmittance may be improved.

  Moreover, in the said embodiment, although the board | substrate 13a was comprised from aluminum, it should just be a material which can form the hole group 132 by not only the thing of this form but chemical processing, and can change suitably. For example, a semiconductor substrate such as silicon or gallium arsenide may be used.

For example, when an n-type GaAs (001) substrate is anodized at a voltage of 12 V while irradiating light with a tungsten lamp in NH ₄ OH and applying a magnetic field, a group of holes having vertical holes with a pitch of about 250 nm is obtained. Since such a substrate is patterned by photolithography in the same manner as described above, and wet etching is performed with a mixed solution of sulfuric acid and hydrogen peroxide solution, the concave portion 134 can be formed in the same manner as in the previous example. Such a grating may be used as a phase grating.

  In addition, when forming a hole group having a plurality of holes, a method of forming a hole group by energizing the material in the acidic solution with the material for which the hole group is to be formed as an anode is often adopted. The case of non-oxidized silicon or gallium arsenide (GaAs) is referred to as “anodization” as described above.

  Further, as described above, when the substrate is replaced with a substrate having a high transmittance at the final stage of processing, a material having a lower X-ray transmittance than aluminum such as molybdenum may be used as the anodic oxidation base material. This is because the transmission part of the lattice has a porous structure with fine holes, so that the transmittance can be sufficiently secured even if the base material has a low X-ray transmittance. However, when the base material with poor transmittance remains as the substrate, the contrast between transmission and non-transmission may be lowered. Therefore, when the base material is a substance with poor X-ray transmittance, as described above. It is desirable to replace the substrate with a substrate with high transmittance at the final stage of processing.

  Moreover, in the said embodiment, although X-ray absorption material was comprised from gold | metal | money (Au), it can change suitably not only the thing of this form. The X-ray absorbing material is, for example, a metal or noble metal having a low atomic weight and a relatively heavy atomic weight, more specifically, platinum (platinum, Pt), rhodium (Rh), ruthenium (Ru), and iridium ( Ir) or the like.

  In the above-described first embodiment (including these modifications), the X-ray metal grating 1a has a one-dimensional periodic structure, but is not limited thereto. The X-ray metal grating 1a may be, for example, a two-dimensional periodic structure grating. For example, an X-ray metal having a two-dimensional periodic structure is configured by arranging dots, which are members of a two-dimensional periodic structure, at equal intervals in two linearly independent directions. Such a metal grating for X-rays having a two-dimensional periodic structure can be formed by puncturing a high aspect ratio hole in a plane with a two-dimensional period, or standing a high aspect ratio cylinder on a plane with a two-dimensional period. . Alternatively, a metal may be embedded in these spaces as described above.

  FIG. 16 is a diagram for explaining vignetting of X-rays emitted from the X-ray source in the X-ray metal grating.

  FIG. 16A shows the case of an X-ray metal grating having an X-ray transmitting portion extending in the normal direction, which is formed by a plurality of hole portions extending along the normal direction. ) Is a metal grating for X-rays having an X-ray transmission portion formed by a plurality of hole portions extending so as to converge toward the X-ray focal point and extending so as to converge toward the X-ray focal point. This case is shown. In general, the X-ray source is a point wave source, and emits X-rays radially as shown in FIG. For this reason, the X-ray metal grid is a flat plate, the plurality of holes extend along the normal direction, and the X-ray source is disposed on the normal passing through the center of the X-ray metal grid. In this case, as shown in FIG. 16 (A), as it goes from the center toward the periphery, it enters the X-ray transmission part composed of the part in which the plurality of holes are formed, and as a result, so-called vignetting occurs. It will occur. In the X-ray metal grating manufacturing method, as shown in FIG. 16B, each of the plurality of holes is formed so as to converge toward the focal point of the X-ray, so that the vignetting can be reduced.

(Second and Third Embodiments: Talbot Interferometer and Talbot Low Interferometer)
The X-ray metal grating 1a of the above embodiment can form a metal portion with a high aspect ratio, and therefore can be suitably used for an X-ray Talbot interferometer and a Talbot-Lau interferometer. An X-ray Talbot interferometer and an X-ray Talbot-low interferometer using the metal grating 1a will be described.

  FIG. 17 is a perspective view showing a configuration of an X-ray Talbot interferometer in the second embodiment. FIG. 18 is a top view showing a configuration of an X-ray Talbot-Lau interferometer in the third embodiment.

  As shown in FIG. 17, an X-ray Talbot interferometer 100A according to the embodiment includes an X-ray source 101 that emits X-rays having a predetermined wavelength, and a phase type that diffracts X-rays emitted from the X-ray source 101. The first and second diffraction gratings 102 and 103 include a first diffraction grating 102 and an amplitude-type second diffraction grating 103 that forms an image contrast by diffracting the X-rays diffracted by the first diffraction grating 102. Are set to the conditions constituting the X-ray Talbot interferometer. Then, the X-ray with the image contrast generated by the second diffraction grating 103 is detected by, for example, an X-ray image detector 105 that detects the X-ray. In the X-ray Talbot interferometer 100A, at least one of the first diffraction grating 102 and the second diffraction grating 103 is an X-ray metal manufactured by any of the above-described methods for manufacturing the X-ray metal grating 1a. It is the lattice 1a.

The conditions constituting the Talbot interferometer 100A are expressed by the following equations 1 and 2. Equation 2 assumes that the first diffraction grating 102 is a phase type diffraction grating.
l = λ / (a / (L + Z1 + Z2)) (Formula 1)
Z1 = (m + 1/2) × (d2 / λ) (Formula 2)
Here, l is the coherence distance, λ is the wavelength of X-rays (usually the center wavelength), and a is the aperture diameter of the X-ray source 101 in the direction substantially perpendicular to the diffraction member of the diffraction grating. Yes, L is the distance from the X-ray source 101 to the first diffraction grating 102, Z 1 is the distance from the first diffraction grating 102 to the second diffraction grating 103, and Z 2 is from the second diffraction grating 103. The distance to the X-ray image detector 105, m is an integer, and d is the period of the diffraction member (the period of the diffraction grating, the grating constant, the distance between the centers of adjacent diffraction members, the pitch P). .

  In the X-ray Talbot interferometer 100A having such a configuration, X-rays are irradiated from the X-ray source 101 toward the first diffraction grating 102. This irradiated X-ray produces a Talbot effect at the first diffraction grating 102 to form a Talbot image. This Talbot image is acted on by the second diffraction grating 103 to form an image contrast of moire fringes. Then, this image contrast is detected by the X-ray image detector 105.

  The Talbot effect means that when light enters the diffraction grating, the same image as the diffraction grating (self-image of the diffraction grating) is formed at a certain distance. Good, this self-image is called the Talbot image. When the diffraction grating is a phase type diffraction grating, the Talbot distance L is Z1 represented by the above formula 2 (L = Z1). In the Talbot image, an inverted image appears at an odd multiple of L (= (2m + 1) L, m is an integer), and a normal image appears at an even multiple of L (= 2 mL).

  Here, when the subject S is arranged between the X-ray source 101 and the first diffraction grating 102, the moire fringes are modulated by the subject S, and the modulation amount is caused by the refraction effect by the subject S. It is proportional to the angle at which the X-ray is bent. For this reason, the subject S and its internal structure are detected by analyzing the moire fringes.

  In the Talbot interferometer 100A configured as shown in FIG. 17, the X-ray source 101 is a single point light source, and such a single point light source forms a single slit (single slit). The X-ray radiated from the X-ray source 101 passes through the single slit of the single slit plate and passes through the subject S to the first diffraction grating 102. Radiated towards. The slit is an elongated rectangular opening extending in one direction.

  On the other hand, the Talbot-Lau interferometer 100B includes an X-ray source 101, a multi-slit plate 104, a first diffraction grating 102, and a second diffraction grating 103, as shown in FIG. That is, the Talbot-Lau interferometer 100B further includes a multi-slit plate 104 in which a plurality of slits are formed in parallel on the X-ray emission side of the X-ray source 101 in addition to the Talbot interferometer 100A shown in FIG. Is done.

  The multi-slit plate 104 is a so-called zeroth lattice, and may be the X-ray metal lattice 1 manufactured by any of the methods for manufacturing the X-ray metal lattice 1 described above. By manufacturing the multi-slit plate 104 by any one of the above-described methods for manufacturing the X-ray metal grid 1, the X-rays are transmitted through the slit-shaped X-ray transmitting portion 112a and more reliably the slit-shaped X-rays. Since it can be blocked by the absorption unit 111a, it is possible to more clearly distinguish between transmission and non-transmission of X-rays. Therefore, the multi-slit plate 104 more reliably detects X-rays emitted from the X-ray source 101. A multi-light source can be used.

  By using the Talbot-Lau interferometer 100B, the X-ray dose radiated toward the first diffraction grating 102 through the subject S is larger than that of the Talbot interferometer 100A. can get.

(4th Embodiment; X-ray imaging device)
The X-ray metal grating 1a can be used in various optical devices. However, since the X-ray absorber 111a can be formed with a high aspect ratio, the X-ray metal lattice 1a is preferably used in, for example, an X-ray imaging device. it can. In particular, an X-ray imaging apparatus using an X-ray Talbot interferometer treats X-rays as waves and detects a phase shift of the X-rays caused by passing through the subject to obtain a phase contrast method for obtaining a transmission image of the subject. Compared with the absorption contrast method that obtains an image in which the magnitude of X-ray absorption by the subject is a contrast, an improvement in sensitivity of about 1000 times is expected, so that the X-ray irradiation dose is, for example, 1/100 to 1 / 1000 has the advantage that it can be reduced. In the present embodiment, an X-ray imaging apparatus provided with an X-ray Talbot interferometer using the X-ray metal grating 1a will be described.

  FIG. 19 is an explanatory diagram illustrating a configuration of an X-ray imaging apparatus according to the fourth embodiment. Also in FIG. 19, the X-ray transmission part of the X-ray metal grating is shown in white. In FIG. 19, an X-ray imaging apparatus 200 includes an X-ray imaging unit 201, a second diffraction grating 202, a first diffraction grating 203, and an X-ray source 204. Furthermore, in this embodiment, the X-ray source An X-ray power supply unit 205 that supplies power to 204, a camera control unit 206 that controls the imaging operation of the X-ray imaging unit 201, a processing unit 207 that controls the overall operation of the X-ray imaging apparatus 200, and an X-ray power supply And an X-ray control unit 208 that controls the X-ray emission operation in the X-ray source 204 by controlling the power supply operation of the unit 205.

  The X-ray source 204 is a device that emits X-rays by being supplied with power from the X-ray power supply unit 205 and emits X-rays toward the first diffraction grating 203. The X-ray source 204 emits X-rays when, for example, a high voltage supplied from the X-ray power supply unit 205 is applied between the cathode and the anode, and electrons emitted from the cathode filament collide with the anode. Device.

  The first diffraction grating 203 is a diffraction grating that generates a Talbot effect by X-rays emitted from the X-ray source 204. The first diffraction grating 203 is, for example, a diffraction grating manufactured by any of the methods for manufacturing the X-ray metal grating 1 described above. The first diffraction grating 203 is configured so as to satisfy the conditions for causing the Talbot effect, and is a grating sufficiently coarser than the wavelength of X-rays emitted from the X-ray source 204, for example, a grating constant (period of the diffraction grating). d is a phase type diffraction grating in which the wavelength of the X-ray is about 20 or more. The first diffraction grating 203 may be such an amplitude type diffraction grating.

  The second diffraction grating 202 is a transmission-type amplitude diffraction grating that is disposed at a position that is approximately a Talbot distance L away from the first diffraction grating 203 and that diffracts the X-rays diffracted by the first diffraction grating 203. Similarly to the first diffraction grating 203, the second diffraction grating 202 is also a diffraction grating manufactured by, for example, any one of the above-described methods for manufacturing the X-ray metal grating 1.

  These first and second diffraction gratings 203 and 202 are set to conditions that constitute the Talbot interferometer represented by the above-described Expression 1 and Expression 2.

  The X-ray imaging unit 201 is an apparatus that captures an X-ray image diffracted by the second diffraction grating 202. The X-ray imaging unit 201 includes, for example, a flat panel detector (FPD) including a two-dimensional image sensor in which a thin film layer including a scintillator that absorbs X-ray energy and emits fluorescence is formed on a light receiving surface, and incident photons. An image intensifier unit that converts the electrons into electrons on the photocathode, doubles the electrons on the microchannel plate, and causes the doubled electrons to collide with phosphors to emit light, and the output light of the image intensifier unit An image intensifier camera including a two-dimensional image sensor.

  The processing unit 207 is a device that controls the overall operation of the X-ray imaging apparatus 200 by controlling each unit of the X-ray imaging apparatus 200. For example, the processing unit 207 includes a microprocessor and its peripheral circuits. An image processing unit 271 and a system control unit 272 are provided.

  The system control unit 272 controls the X-ray emission operation in the X-ray source 204 via the X-ray power source unit 205 by transmitting and receiving control signals to and from the X-ray control unit 208, and the camera control unit 206 The imaging operation of the X-ray imaging unit 201 is controlled by transmitting and receiving control signals between the two. Under the control of the system control unit 272, X-rays are emitted toward the subject S, and an image generated thereby is captured by the X-ray imaging unit 201, and an image signal is input to the processing unit 207 via the camera control unit 206. Is done.

  The image processing unit 271 processes the image signal generated by the X-ray imaging unit 201 and generates an image of the subject S.

  Next, the operation of the X-ray imaging apparatus of this embodiment will be described. For example, the subject S is placed between the X-ray source 204 and the first diffraction grating 203 by placing the subject S on an imaging table provided with the X-ray source 204 inside (rear surface). When imaging of the subject S is instructed by a user (operator) of the apparatus 200 from an operation unit (not shown), the system control unit 272 of the processing unit 207 causes the X-ray control unit to emit X toward the subject S. A control signal is output to 208. In response to this control signal, the X-ray control unit 208 causes the X-ray power supply unit 205 to supply power to the X-ray source 204, and the X-ray source 204 emits X-rays and irradiates the subject S with X-rays.

  The irradiated X-ray passes through the first diffraction grating 203 through the subject S, is diffracted by the first diffraction grating 203, and is a self-image of the first diffraction grating 203 at a position away from the Talbot distance L (= Z1). A Talbot image T is formed.

  The formed X-ray Talbot image T is diffracted by the second diffraction grating 202 to generate moire and form an image of moire fringes. This moire fringe image is captured by the X-ray imaging unit 201 whose exposure time is controlled by the system control unit 272, for example.

  The X-ray imaging unit 201 outputs an image signal of the moire fringe image to the processing unit 207 via the camera control unit 206. This image signal is processed by the image processing unit 271 of the processing unit 207.

  Here, since the subject S is disposed between the X-ray source 204 and the first diffraction grating 203, the phase of the X-ray that has passed through the subject S is the same as that of the X-ray that does not pass through the subject S. Shift. For this reason, the X-rays incident on the first diffraction grating 203 include distortion in the wavefront, and the Talbot image T is deformed accordingly. For this reason, the moire fringes of the image generated by the superposition of the Talbot image T and the second diffraction grating 202 are modulated by the subject S, and this modulation amount is bent by the refraction effect by the subject S. Is proportional to the angle obtained. Therefore, the subject S and the internal structure can be detected by analyzing the moire fringes. Further, a tomographic image of the subject S can be formed by X-ray phase CT (Computed Tomography) by imaging the subject S from a plurality of angles.

  Since the second diffraction grating 202 of the present embodiment is the X-ray metal grating 1 according to the above-described embodiment including the X-ray absorber 111a having a high aspect ratio, good moire fringes can be obtained and high accuracy can be obtained. An image of the subject S is obtained.

  In the X-ray imaging apparatus 200 described above, a Talbot interferometer is configured by the X-ray source 204, the first diffraction grating 203, and the second diffraction grating 202. However, the X-ray imaging apparatus 200 is configured as a multi-slit on the X-ray emission side of the X-ray source 204. The Talbot-Lau interferometer may be configured by further disposing the X-ray metal grating 1 in the above-described embodiment. By using such a Talbot-Lau interferometer, the X-ray dose irradiated to the subject S can be increased as compared with the case of a single slit, a better moire fringe can be obtained, and a more accurate subject. An image of S is obtained.

  In the X-ray imaging apparatus 200 described above, the subject S is arranged between the X-ray source 204 and the first diffraction grating 203, but the subject is interposed between the first diffraction grating 203 and the second diffraction grating 202. A specimen S may be arranged.

  Further, in the above-described X-ray imaging apparatus 200, an X-ray image is captured by the X-ray imaging unit 201 and electronic data of the image is obtained, but may be captured by an X-ray film.

  As described above, the X-ray imaging apparatus of this embodiment can be grasped as follows. That is, the X-ray imaging apparatus includes an X-ray source that emits X-rays, a Talbot interferometer or Talbot-low interferometer that is irradiated with X-rays emitted from the X-ray source, and the Talbot interferometer or Talbot interferometer. An X-ray image pickup device that picks up an X-ray image by a low interferometer, and the Talbot interferometer or the Talbot low interferometer is an X-ray metal grating manufactured by the above-described method for manufacturing a high aspect ratio structure. It is characterized by including.

  Such an X-ray imaging apparatus uses the above-described metal grating having higher performance as the metal grating for X-rays constituting the Talbot interferometer or the Talbot-Lau interferometer, so that a clearer X-ray image can be obtained. Can do.

(Fifth Embodiment; Method for Manufacturing Ultrasonic Probe)
In general, a single active element (piezo element that performs both transmission and reception of high-frequency sound waves) is used for an ultrasonic probe that is used for non-destructive testing (NDT) and medical use. On the other hand, the phased array system is composed of a plurality of probes (for example, 256 in the case of more than 16) that can be individually pulse-oscillated, and the intensity of ultrasonic waves emitted from the plurality of piezoelectric elements. By individually electrically controlling the phase and the like, it is possible to arbitrarily change the propagation direction and focal region of the ultrasonic wave.

  Hereinafter, a method of manufacturing the ultrasonic probe for the phased array using the high aspect ratio structure according to the present invention will be described.

  As in the case of manufacturing the X-ray metal grid of the first embodiment, the main surface having the hole group 332 in the substrate 301 made of aluminum as shown in FIG. An ultrasonic probe manufacturing mold 300, which is a one-dimensional high aspect ratio structure in which 100 μm concave portions 300a are continuously arranged at a pitch interval L2 of 30 μm (= period 30 μm), is manufactured.

  Next, as shown in FIG. 21, plating is performed using the substrate 301 at the bottom of the concave portion 300a of the ultrasonic probe manufacturing mold 300 as a plating electrode, and a nickel filling made of nickel is filled into the concave portion 300a to obtain a thickness of 1 mm. Was deposited. Thereafter, the ultrasonic probe manufacturing mold 300 was dissolved and removed with a phosphoric acid solution to obtain a mold 350 having a mold recess 350a as shown in FIG. 22 (mold forming step).

  Next, as shown in FIG. 23, the obtained metal mold 350 was filled with a resin filler made of a resin material. As the resin material, an acrylic resin made of polymethyl methacrylate (PMMA) was used. A syrup-like acrylic resin softened by heating is poured into a mold recess 350a of a mold 350, cooled to room temperature and cured, and then the resin material is separated from the mold 350, and as shown in FIG. A resin mold 351 having a recess 351a was obtained (resin mold forming step).

  Next, as shown in FIG. 25, a slurry containing lead zirconate titanate (PZT) particles was filled in the resin mold recess 351 a of the resin mold 35. The slurry was prepared using water and an organic binder. Next, the slurry filled by drying was solidified. Subsequently, ashing using oxygen plasma was performed to remove the resin mold 351 (FIG. 26). Next, the solidified product of the remaining slurry was pre-baked at 500 ° C. and further subjected to main baking at 1100 ° C. As a result of the firing, a lead zirconate titanate (PZT) sintered body 352 was obtained as a piezoelectric material comprising a microstructure having a sintered body recess (structure recess) 352a as shown in FIG. Forming step).

The sintered body recess 352a of the lead zirconate titanate sintered body 352 thus prepared was filled with an epoxy resin 353 as shown in FIG. 27, and then the epoxy resin 353 and the titanic acid as shown in FIG. The pedestal portion of the lead zirconate sintered body 352 is removed by polishing to form an ultrasonic probe main body 310 in which lead zirconate titanate sintered bodies 352 and epoxy resins 353 are arrayed alternately (ultrasonic probe main body 310). Main body forming step). Thereafter, electrodes were formed on both surfaces of the ultrasonic probe main body 310 to obtain an ultrasonic probe.

  As described above, the ultrasonic probe manufacturing mold 300 that is a high aspect ratio structure used in the method of manufacturing an ultrasonic probe has a plurality of recesses 300a formed on one main surface of the substrate 301 by wet etching. Is formed to have a side surface perpendicular to the main surface of the substrate 301. And the manufacturing method of an ultrasonic probe manufactures the ultrasonic probe 310 based on this type | mold 300 for ultrasonic probe manufacture, and alternates the lead zirconate titanate sintered compact 352 and the epoxy resin 353 correctly. They can be arrayed side by side and manufactured at low cost.

  In order to express the present invention, the present invention has been properly and fully described through the embodiments with reference to the drawings. However, those skilled in the art can easily change and / or improve the above-described embodiments. It should be recognized that this is possible. Therefore, unless the modifications or improvements implemented by those skilled in the art are at a level that departs from the scope of the claims recited in the claims, the modifications or improvements are not covered by the claims. To be construed as inclusive.

1a X-ray metal grid (high aspect ratio structure)
10a, 10c Lattice region 11a Lattice 12a Frame region 13a Metal substrate (substrate)
100A X-ray Talbot Interferometer 100B X-ray Talbot-Lau Interferometer 102, 203 First Diffraction Grating 103, 202 Second Diffraction Grating 104 Multi-Slit Plate 141 First Area 142 Second Area 200 X-ray Imaging Device 300 Ultrasound Probe manufacturing mold (high aspect ratio structure)
134, 300a recess

Claims (8)

A hole forming step of forming a plurality of holes in at least one main surface of the substrate;
A resist forming step of forming a first region in which a resist layer is provided and a second region in which the resist layer is not provided on the main surface in which the plurality of holes are formed after the hole forming step is completed. When,
And a recess forming step of forming a recess in the substrate corresponding to the second region by immersing in an etching solution.   2. The method of manufacturing a high aspect ratio structure according to claim 1, wherein the hole forming step is performed by an anodic oxidation method or an anodizing method.   3. The method of manufacturing a high aspect ratio structure according to claim 1, wherein the substrate is made of aluminum, tungsten, molybdenum, silicon, gallium arsenide, or indium phosphide.   4. The X-ray absorbing material burying step of burying an X-ray absorbing material capable of absorbing X-rays in the recess, further comprising an X-ray absorbing material burying step. The manufacturing method of the high aspect-ratio structure of description.   5. The method of manufacturing a high aspect ratio structure according to claim 4, wherein the X-ray absorbing material burying step embeds a metal which is an X-ray absorbing material by electroforming.   The high aspect ratio structure is an X-ray metal grating used in an X-ray Talbot interferometer or an X-ray Talbot-Lau interferometer. Of manufacturing a high aspect ratio structure.   The high aspect ratio structure according to any one of claims 1 to 3, wherein the high aspect ratio structure is an ultrasonic probe manufacturing mold used in manufacturing an ultrasonic probe. Manufacturing method. A mold forming step of forming a mold having a recess for a mold by filling a recess in the mold for producing an ultrasonic probe according to claim 7 with a metal;
A resin mold forming step of forming a resin mold having a resin mold recess by filling a resin filler made of a resin material into the mold recess of the mold; and
A fine structure forming step of forming a fine structure having a structure concave portion by filling the resin mold concave portion with a slurry containing a piezoelectric material;
An ultrasonic probe forming an ultrasonic probe main body in which a structure resin of a microstructure is filled with a synthetic resin and a piezoelectric layer made of the piezoelectric material and a synthetic resin layer made of a synthetic resin are alternately arranged. A method for producing an ultrasonic probe comprising: a main body forming step.

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