JP2016524438A5 - - Google Patents

Claims (20)

A thermoelectric device,
At least one first heat exchange member including a conductor having a top surface and a bottom surface connected by a side surface on which a thin film of active material is deposited;
And at least one second heat exchange member including a conductor having a top surface and a bottom surface on which a coupling layer is deposited, the conductors being coupled by side surfaces;
The active material includes one of a P-type and an N-type thermoelectric material opposed to the top and bottom surfaces,
The active material thin film is deposited with an anti-diffusion coating on which a tie layer is deposited;
The conductor of the first heat exchange member is formed with a heat transfer path for receiving a heat transfer liquid,
The conductor of the second heat exchange member is formed with a heat transfer surface that receives a heat transfer medium,
The first and second heat exchange members are connected to each other in the coupling layer;
A thermoelectric device that provides a temperature difference between the first and second heat exchange members. The thermoelectric device includes a plurality of first and second conductive members connected in a columnar shape,
The thermoelectric device of claim 1, wherein the active material comprises alternating N and P type materials defining an electrical circuit. The heat transfer path of the first heat exchange member includes an inlet and an outlet,
It said inlet and outlet, the thermoelectric device according to claim 1 or 2 is connected by transport paths are formed on the conductor. The thermoelectric device of claim 1 or 2 , wherein the active material is 4-8 microns thick and is vacuum deposited on the conductor. The thermoelectric device of claim 1 or 2 , wherein the active material comprises a polycrystalline thermoelectric material having a crystal structure oriented along a heat flow. The thermoelectric device of claim 1 or 2 , wherein the active material comprises bismuth telluride. The P-type thermoelectric material includes bismuth telluride forming a P-type doped with lead,
The thermoelectric device of claim 6 , wherein the N-type thermoelectric material comprises bismuth telluride forming an N-type material doped with selenium. The thermoelectric device of claim 1 or 2 , wherein the anti-diffusion coating is formed from a material selected from the group consisting of aluminum, gold and nickel. The coupling layer is
Solder formed from a tin material and applied in a thickness of 2-4 microns;
The thermoelectric device according to claim 1 or 2 , comprising a flux. The thermoelectric device of claim 2 , wherein the plurality of columns of the first and second heat exchange members define an array. The thermoelectric device of claim 10, wherein adjacent columns are connected in series with the reverse order of N and P type thermoelectric materials. The thermoelectric device of claim 10, wherein the plurality of columns of the array are connected in a rectangular or square pattern. The second heat exchange member includes a plurality of separation walls connected by a top surface and a bottom surface,
The separating wall defines an air path therebetween ;
The thermoelectric device of claim 1 or 2 , wherein the first and second heat exchange members define a liquid / gas heat exchange device. The second heat exchange member includes a conductor having a heat transfer path for receiving a heat transfer liquid,
The thermoelectric device of claim 1 or 2, wherein the first and second heat exchange members define a liquid / liquid heat exchange device. The second heat exchange member is viewed contains an infrared connection side,
The thermoelectric device of claim 1 or 2 , wherein the first and second heat exchange members define a liquid / solid heat exchange device. The thermoelectric device of claim 2, further comprising an external contact and connecting bridges for the passage of the current. The first and the thermoelectric device according to claim 2, further comprising a top, bottom and side frame members to accommodate the pillars of the second heat exchange member. The thermoelectric device of claim 17 , further comprising at least one hot and cold manifold attached to the side frame member to supply the heat transfer liquid. Further comprising an electrically isolated connecting rod,
The connecting rod is attached to the top and bottom frame members;
The thermoelectric device according to claim 17 or 18 , wherein the connecting rod is received in a connecting bore formed in the first and second conductive members. Thermoelectric devices of the temperature difference Ri der than 5 degrees Celsius, and / or any one of the conversion efficiency from thermal energy to electrical energy 5% to 10% der Ru claims 1 to 19.