JP2016213298A5 - Imaging device - Google Patents
Imaging device Download PDFInfo
- Publication number
- JP2016213298A5 JP2016213298A5 JP2015094847A JP2015094847A JP2016213298A5 JP 2016213298 A5 JP2016213298 A5 JP 2016213298A5 JP 2015094847 A JP2015094847 A JP 2015094847A JP 2015094847 A JP2015094847 A JP 2015094847A JP 2016213298 A5 JP2016213298 A5 JP 2016213298A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- circuit
- photoelectric conversion
- conversion element
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003384 imaging method Methods 0.000 title claims 3
- 238000006243 chemical reaction Methods 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 238000005755 formation reaction Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Claims (2)
前記画素回路を駆動する駆動回路と、
前記画素回路で得られるアナログ電圧をデジタル値の第１の信号に変換するアナログデジタル変換回路と、
前記第１の信号を処理し、第２の信号に変換する画像処理回路と、を有し、
前記画像処理回路は、記憶回路を有し、
前記記憶回路は、酸化物半導体をチャネル形成領域に有する第２のトランジスタを有し、
前記駆動回路が有する第３のトランジスタと、前記アナログデジタル変換回路とが有する第４のトランジスタとは、シリコンをチャネル形成領域に有し、
前記第１のトランジスタと前記第２のトランジスタとは、前記第３のトランジスタ上及び前記第４のトランジスタ上に位置し、
前記光電変換素子は、前記第１のトランジスタ上と前記第２のトランジスタ上に位置し、
前記光電変換素子は、前記第１のトランジスタと前記第２のトランジスタのそれぞれと重なる、撮像装置。 A pixel circuit including a photoelectric conversion element and a first transistor including an oxide semiconductor in a channel formation region ;
A drive circuit for driving the pixel circuit ;
An analog-to-digital conversion circuit that converts an analog voltage obtained by the pixel circuit into a digital first signal ;
An image processing circuit that processes the first signal and converts it into a second signal ;
The image processing circuit includes a storage circuit,
The memory circuit includes a second transistor including an oxide semiconductor in a channel formation region,
The third transistor included in the driver circuit and the fourth transistor included in the analog-digital conversion circuit include silicon in a channel formation region,
The first transistor and the second transistor are located on the third transistor and the fourth transistor,
The photoelectric conversion element is located on the first transistor and the second transistor,
The imaging device , wherein the photoelectric conversion element overlaps each of the first transistor and the second transistor .
前記第２のトランジスタと前記光電変換素子との間、前記第２のトランジスタと前記第１のトランジスタとの間にシールド層が設けられる、撮像装置。 In claim 1,
An imaging device, wherein a shield layer is provided between the second transistor and the photoelectric conversion element, and between the second transistor and the first transistor .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015094847A JP6499006B2 (en) | 2015-05-07 | 2015-05-07 | Imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015094847A JP6499006B2 (en) | 2015-05-07 | 2015-05-07 | Imaging device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016213298A JP2016213298A (en) | 2016-12-15 |
| JP2016213298A5 true JP2016213298A5 (en) | 2018-06-21 |
| JP6499006B2 JP6499006B2 (en) | 2019-04-10 |
Family
ID=57549981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015094847A Expired - Fee Related JP6499006B2 (en) | 2015-05-07 | 2015-05-07 | Imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6499006B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110100311B (en) * | 2016-12-27 | 2023-06-27 | 夏普株式会社 | Image pickup panel and method for manufacturing the same |
| WO2019102296A1 (en) * | 2017-11-23 | 2019-05-31 | 株式会社半導体エネルギー研究所 | Imaging device and electronic device |
| KR20210021463A (en) * | 2018-06-21 | 2021-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Imaging device, operation method thereof, and electronic device |
| CN113330555A (en) * | 2019-01-29 | 2021-08-31 | 株式会社半导体能源研究所 | Imaging device and electronic apparatus |
| JP7407416B2 (en) | 2019-11-26 | 2024-01-04 | パナソニックＩｐマネジメント株式会社 | Imaging device and camera |
| JP7377082B2 (en) * | 2019-11-29 | 2023-11-09 | 株式会社ジャパンディスプレイ | Detection device and method for manufacturing the detection device |
| JPWO2021161134A1 (en) * | 2020-02-14 | 2021-08-19 | ||
| CN117480611A (en) * | 2021-06-17 | 2024-01-30 | 株式会社半导体能源研究所 | Image pickup device and electronic apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008103566A (en) * | 2006-10-19 | 2008-05-01 | Toshiba Corp | Solid-state image pickup device |
| JP4891308B2 (en) * | 2008-12-17 | 2012-03-07 | キヤノン株式会社 | Solid-state imaging device and imaging system using solid-state imaging device |
| CN104485341A (en) * | 2009-11-06 | 2015-04-01 | 株式会社半导体能源研究所 | Semiconductor device |
| US9431545B2 (en) * | 2011-09-23 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9236408B2 (en) * | 2012-04-25 | 2016-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor device including photodiode |
-
2015
- 2015-05-07 JP JP2015094847A patent/JP6499006B2/en not_active Expired - Fee Related
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