JP2016207520A - Ion beam irradiation device and ion beam irradiation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device capable of irradiating an entire surface of a substrate with an ion beam and further capable of shortening the time required for substrate processing even if the substrate is scanned and rotated.SOLUTION: An ion beam irradiation device comprises: a rotation mechanism 10 for rotating a holder 8 that is accommodated within a vacuum container 4, and a substrate 6 that is held by the holder around its central part; and a scan mechanism 14 for mechanically scanning the holder 8, the substrate 6 and the rotation mechanism 10. Further, the ion beam irradiation device comprises: an ion beam supply part 18 for irradiating the substrate 6 on the holder 8 with an ion beam 28 of which the dimension at a position of the substrate 6 is larger than the substrate 6 and a size including a region where the substrate 6 is scanned; and a control device 50 which controls the rotation mechanism 10 and the scan mechanism 14 and has a function for irradiating the entire surface of the substrate 6 with the ion beam 28 while rotating and scanning the substrate 6 within an irradiation region of the ion beam 28.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an ion beam irradiation apparatus and an ion beam irradiation method for treating a substrate by irradiating the substrate with an ion beam in a vacuum atmosphere, such as an ion milling apparatus and an ion implantation apparatus.

  An ion source that extracts an ion beam having a rectangular cross section whose long side is larger than that of the substrate and whose short side is smaller than that of the substrate, and the substrate is placed on the ion beam so that the substrate is positioned inside and outside the ion beam irradiation region. It has a translation mechanism that translates in the short side direction and a rotation mechanism that rotates the substrate around its center when the substrate is outside the ion beam irradiation area. A processing apparatus and a processing method for performing processing are described in Patent Document 1, for example.

Japanese Translation of PCT International Publication No. 2010-539674 (FIG. 16B, FIG. 20, paragraphs 0064-0075)

  In the above conventional technique, the substrate is moved out of the ion beam irradiation region every time the substrate is translated, so that there is a problem that the processing efficiency of the substrate is lowered and the time required for the substrate processing is increased.

  In addition, in order to rotate the substrate outside the ion beam irradiation region, it is necessary to move (translate) the substrate outside the ion beam irradiation region each time the substrate is rotated. From the viewpoint, there is a problem that the time required for substrate processing becomes long. When the substrate is rotated step by step several times, the time required for substrate processing is particularly long.

  Accordingly, the present invention provides an ion beam irradiation apparatus that can irradiate the entire surface of an ion beam with an ion beam and that can reduce the time required for substrate processing even when the substrate is mechanically scanned and rotated. One purpose.

  Another object of the present invention is to provide an ion beam irradiation method capable of performing the above processing.

  An ion beam irradiation apparatus according to the present invention is an apparatus that irradiates a substrate with an ion beam in a vacuum atmosphere, and a vacuum container that is evacuated to a vacuum, a holder that is accommodated in the vacuum container and holds the substrate, A rotation mechanism for rotating the holder and the substrate held by the holder around a center portion of the substrate, a scanning mechanism for mechanically reciprocatingly scanning the holder, the substrate held by the substrate and the rotation mechanism, and the holder. An ion beam supply unit that irradiates an ion beam having a size larger than a size including a region where the substrate and the substrate are scanned with respect to the held substrate, the rotation mechanism, By controlling the scanning mechanism, the substrate is rotated and scanned within the ion beam irradiation area, and the entire surface of the substrate is rotated. And a and has a control device which has a function of irradiating Onbimu is characterized by.

  The ion beam irradiation apparatus irradiates the substrate held by the holder with an ion beam having a size larger than the size of the substrate and the region including the region where the substrate is scanned. The ion beam supply unit, the rotation mechanism, and the scanning mechanism are controlled to rotate and scan the substrate within the ion beam irradiation region, thereby irradiating the entire surface of the substrate with the ion beam. And a controller that scans the substrate within the ion beam irradiation region, and it is not necessary to move the substrate outside the ion beam irradiation region for each substrate scan as in the prior art. The processing time of the substrate can be improved by shortening the time required for the substrate processing.

  Further, the substrate is also rotated in the ion beam irradiation area, and it is not necessary to move the substrate outside the ion beam irradiation area every time the substrate is rotated as in the prior art. Also from this point of view, it is possible to shorten the time required for the substrate processing and improve the substrate processing efficiency.

  The ion beam supply unit is an ion source having a plasma generation unit that generates plasma and an extraction electrode system that extracts an ion beam from the plasma by the action of an electric field, and the extraction electrode system includes the substrate and the ion source A configuration in which an ion beam extraction region having a size larger than a size including a region to be scanned by the substrate may be employed. Moreover, you may employ | adopt another modification.

  An ion beam irradiation method according to the present invention is a method of irradiating a substrate with an ion beam in a vacuum atmosphere, a vacuum container that is evacuated to a vacuum, a holder that is accommodated in the vacuum container and holds the substrate, A rotation mechanism for rotating the holder and the substrate held by the holder around a center portion of the substrate, a scanning mechanism for mechanically reciprocatingly scanning the holder, the substrate held by the substrate and the rotation mechanism, and the holder. An ion beam supply unit that irradiates an ion beam having a size larger than a size including a region where the substrate and the substrate are scanned with respect to the held substrate. Using the ion beam irradiation apparatus, the substrate is rotated and scanned within the ion beam irradiation region, and the entire surface of the substrate is scanned. It is characterized by irradiating the Onbimu.

  According to the first aspect of the present invention, with respect to the substrate held by the holder, the ion beam having a size larger than the size including the substrate and the region to be scanned is measured at the position of the substrate. An ion beam supply unit that irradiates the substrate, and a rotation mechanism and a scanning mechanism are controlled to rotate and scan the substrate within the ion beam irradiation region, thereby irradiating the entire surface of the substrate with the ion beam. And a controller that scans the substrate within the ion beam irradiation region, and there is no need to move the substrate outside the ion beam irradiation region every time the substrate is scanned as in the prior art. Therefore, the time required for substrate processing can be shortened and the substrate processing efficiency can be improved.

  Further, the substrate is also rotated in the ion beam irradiation area, and it is not necessary to move the substrate outside the ion beam irradiation area every time the substrate is rotated as in the prior art. Also from this point of view, it is possible to shorten the time required for the substrate processing and improve the substrate processing efficiency.

  According to invention of Claim 2, there exists the following further effect. That is, since the scanning by the scanning mechanism is linear, scanning control is facilitated.

  According to invention of Claim 3, there exists the following further effect. In other words, the ion beam supply unit is an ion source having a plasma generation unit that generates plasma and an extraction electrode system that extracts an ion beam from the plasma by the action of an electric field, and the extraction electrode system includes a substrate and a substrate. Since the ion beam extraction region has a size larger than the size including the region to be scanned, the substrate and the substrate are scanned by spreading a relatively small ion beam extracted from a relatively small ion source. Compared to the case where the substrate is irradiated with an ion beam having a size larger than the size including the region, the current density of the ion beam applied to the substrate can be increased, and thus the processing speed of the substrate can be improved.

  According to invention of Claim 4, there exists the following further effect. That is, since the ion beam extraction direction from the ion source is a direction that intersects the direction of gravity, it is not necessary to arrange a substrate directly under the ion source, and foreign matter such as exfoliation pieces of deposits inside the ion source is generated by the ion source. Even if it falls from the bottom, it becomes difficult to mix into the substrate. As a result, it is possible to suppress the occurrence of substrate processing defects due to contamination.

  According to invention of Claim 5, there exists the following further effect. That is, at least the plasma electrode of the electrode constituting the extraction electrode system of the ion source is provided with a cooling pipe for cooling the electrode, and the plasma electrode has the largest heat input from the plasma generation unit among the electrodes. By providing a cooling pipe on at least the plasma electrode, even if the extraction electrode system including the plasma electrode is enlarged, thermal distortion of the plasma electrode can be suppressed. As a result, it is possible to suppress the deterioration of the current density distribution of the ion beam due to the thermal strain of the electrode and the resulting decrease in the uniformity of the substrate processing.

  According to the sixth aspect of the present invention, the ion beam having a size larger than the size of the substrate held by the holder at the position of the substrate is larger than the size including the substrate and the region to be scanned. Since the substrate is rotated and scanned in the irradiation region of the ion beam using an ion beam irradiation apparatus configured to include an ion beam supply unit that irradiates the ion beam, the entire surface of the substrate is irradiated with the ion beam. As in the case of the ion beam irradiation apparatus according to the first aspect, with respect to both scanning and rotation of the substrate, it is possible to shorten the time required for processing the substrate and improve the processing efficiency of the substrate.

It is a schematic sectional drawing which shows one Embodiment of the ion beam irradiation apparatus concerning this invention. It is a schematic plan view which shows an example of the dimension of the ion beam in the position of a board | substrate. It is a schematic sectional drawing which expands and shows an example of an ion source. It is a schematic plan view which shows an example of the ion beam extraction area | region part of the plasma electrode which comprises the extraction electrode system shown in FIG. It is a schematic plan view which shows the other example of the ion beam extraction area | region part of the plasma electrode which comprises the extraction electrode system shown in FIG. It is the schematic which shows an example of the current density distribution of the ion beam in the position of a board | substrate.

  FIG. 1 shows an embodiment of an ion beam irradiation apparatus according to the present invention. In order to facilitate understanding of the directions, the X direction, the Y direction, and the Z direction that are orthogonal to each other at one point are illustrated in each drawing. For example, the Y direction and the Z direction are horizontal directions, and the X direction is a vertical direction. The ion beam 28 travels in the Z direction in this example.

  This ion beam irradiation apparatus is an apparatus that irradiates a substrate 6 with an ion beam 28 in a vacuum atmosphere, and is accommodated in a vacuum container 4 that is evacuated to vacuum by a vacuum evacuation apparatus (not shown). A holder 8 that holds the substrate 6 to be processed, and a rotation mechanism 10 that rotates the holder 8 and the substrate 6 held by the holder 8 around the central portion 6 a of the substrate 6. An example of the rotation direction C is shown in the figure, but it may be in the opposite direction. Further, the rotation of the holder 8 and the substrate 6 by the rotation mechanism 10 may be continuous rotation or step rotation for each predetermined angle.

  The substrate 6 is, for example, a semiconductor substrate such as a silicon wafer, or a substrate in which a film such as a magnetic film is formed on the surface of the semiconductor substrate, but is not limited thereto.

  The shape of the substrate 6 is, for example, a circle (including an orientation flat or a notch in a part of the circumference), but is not limited thereto.

  The ion beam irradiation apparatus further includes a tilt mechanism 12 that tilts the holder 8 and the substrate 6 held by the holder 8 to change the tilt angle (tilt angle) φ of the substrate 6 with respect to the ion beam 28. The change of the tilt angle φ by the tilt mechanism 12 may be performed within the irradiation region of the ion beam 28 or may be performed outside the irradiation region. However, the tilt mechanism 12 is not essential to the present invention.

  This ion beam irradiation apparatus further includes a scanning mechanism for mechanically reciprocatingly scanning the holder 8, the substrate 6 held thereon, the rotation mechanism 10 and the tilt mechanism 12 via the shaft 16 (that is, mechanical reciprocating scanning). 14 is provided. The scan by the scan mechanism 14 is, for example, linear. An example of the scanning direction D in that case is shown in the drawing. The scanning mechanism 14 is provided outside the vacuum container 4 in this example, but is not limited thereto.

In this ion beam irradiation apparatus, the substrate 6 held by the holder 8 has a size at the position of the substrate 6 as shown in the example shown in FIG. The ion beam supply unit 18 for irradiating the ion beam 28 having a size larger than the size including the ion beam 28 is provided. In Figure 2, also shows an example of a scan direction D and the scan width W _S of the substrate 6. That is, an example in which the substrate 6 indicated by a broken line in FIG. 2 is located at one end of the scan and the substrate 6 indicated by a two-dot chain line is located at the other end of the scan is shown.

  In this embodiment, the ion beam supply unit 18 is the ion source 20 that extracts the ion beam 28 as described above, but is not limited thereto. For example, the ion beam supply unit 18 may include an ion source and an ion optical element configured to expand the ion beam extracted from the ion source with an electric field and / or a magnetic field, and to collimate as necessary. . The ion optical element may be, for example, as described in JP-A-5-166383.

  The ion source 20 may be disposed inside the vacuum container 4 together with the extraction electrode system 24 or may be disposed outside the vacuum container 4. The ion source 20 will be described in detail later.

  The ion beam irradiation apparatus further controls the rotation mechanism 10 and the scanning mechanism 14 to rotate and scan the substrate 6 within the irradiation region of the ion beam 28 and irradiate the entire surface of the substrate 6 with the ion beam 28. A control device 50 having the function of When the tilt mechanism 12 is provided, the control device 50 may further have a function of controlling the tilt angle φ by controlling the tilt mechanism 12.

  According to this ion beam irradiation apparatus, the substrate 6 can be processed by irradiating the entire surface of the substrate 6 with the ion beam 28. For example, the substrate 6 can be subjected to ion milling such as cutting its surface. Also, ion implantation can be performed on the substrate 6. The type of the ion beam 28 may be selected according to the processing content to be applied to the substrate 6. For example, when ion milling is performed, an inert gas ion beam such as an argon ion beam may be used as the ion beam 28. When ion implantation is performed, an ion beam containing a desired dopant may be used as the ion beam 28.

  In addition, this ion beam irradiation apparatus has an ion beam having a size larger than the size of the substrate 6 held by the holder 8 at the position of the substrate 6 including the substrate 6 and a region where the substrate 6 is scanned. The ion beam supply unit 18 that irradiates 28, the rotating mechanism 10, and the scanning mechanism 14 are controlled to rotate and scan the substrate 6 within the irradiation region of the ion beam 28, so that the ion beam 28 is applied to the entire surface of the substrate 6. And a control device 50 having a function of irradiating, and is configured to scan the substrate 6 within the irradiation region of the ion beam 28. As in the prior art, each time the substrate is scanned, the substrate is scanned with the ion beam. Since it is not necessary to move outside the irradiation region, the time required for processing the substrate 6 can be shortened and the processing efficiency of the substrate 6 can be improved.

  Further, the rotation of the substrate 6 is also a configuration in which the substrate 6 is rotated within the irradiation region of the ion beam 28, and it is necessary to move the substrate outside the irradiation region of the ion beam each time the substrate is rotated as in the prior art. Therefore, also from this viewpoint, the time required for processing the substrate 6 can be shortened and the processing efficiency of the substrate 6 can be improved.

  The scanning of the substrate 6 and the like by the scanning mechanism 14 may be linear as in this embodiment, or may be other than linear. If it is linear, scanning control becomes easy. Other than the linear shape, for example, as described in JP-A-3-74040, etc., a holder for holding a substrate is supported by one end of an arm, and a reversible rotational drive is provided at the other end of the arm. The substrate 6 and the like may be scanned by a method in which a source is connected and the arm (also referred to as a swing arm) is reciprocally swung (swinged) within a predetermined angle range.

  Next, an ion source 20 as an example of the ion beam supply unit 18 will be described. In the example illustrated in FIG. 1, the ion source 20 includes a plasma generation unit 22 that generates plasma 23 and an extraction electrode system 24 that extracts an ion beam 28 from the plasma 23 by the action of an electric field.

  The kind of ion source 20 is not limited to a specific type. For example, the ion source 20 may be a so-called bucket type ion source (also called a multipole magnetic field type ion source) that performs confinement of the plasma 23 using a multipolar magnetic field (cusp magnetic field), or (b) A high-frequency ion source that generates plasma 23 by high-frequency discharge may be used. (C) A so-called Bernas type in which plasma 23 is generated by applying a magnetic field in a direction along an axis connecting the cathode and the reflective electrode. An ion source may be used.

  The bucket ion source (a) has an advantage that, for example, the plasma 23 having a large area and good uniformity can be generated, and the ion beam 28 having a large area and good uniformity can be easily extracted. ing. The high-frequency ion source (b) has an advantage that, for example, heat input to the electrodes constituting the extraction electrode system 24 is small.

  The number of electrodes constituting the extraction electrode system 24 is not limited to a specific one. Moreover, a cooling pipe may or may not be provided on the electrodes constituting the extraction electrode system 24 as required.

  The ion source 20 extracts a relatively divergent ion beam 28 so that the size of the ion beam 28 at the position of the substrate 6 is larger than the size including the substrate 6 and the region where the substrate 6 is scanned. An ion source that becomes By doing so, a small ion source 20 is sufficient.

  Alternatively, as in the example shown in FIG. 1, the ion source 20 includes an ion beam extraction region whose extraction electrode system 24 has a size larger than the size including the substrate 6 and the region in which the substrate 6 is scanned (FIG. 4, An ion source having an ion beam extraction region 26 in FIG. 5 may be used. According to such an ion source 20, the ion beam 28 having a size larger than the size including the substrate 6 and the region to be scanned is expanded by expanding the relatively small ion beam extracted from the relatively small ion source. Since the current density of the ion beam 28 irradiating the substrate 6 can be increased as compared with the case where the substrate 6 is irradiated, the processing speed of the substrate 6 can be improved.

  A more detailed example of the ion source 20 of the example shown in FIG. 1 will be further described with reference to FIG. The plasma generation unit 22 that generates the plasma 23 is a known plasma generation unit that constitutes, for example, the above-described bucket ion source, high-frequency ion source, or Bernas ion source, and is simplified in FIG. .

  The ion source 20 of the example shown in FIG. 3 has a plurality of (three in this example) electrodes 31 to 33 as a component of the extraction electrode system 24. In this application, of the three electrodes, the electrode closest to the plasma 23 is referred to as the plasma electrode 31, and the electrode on the downstream side (downstream in the traveling direction of the ion beam 28, hereinafter the same) is referred to as the extraction electrode 32. The downstream electrode is called a ground electrode 33. For example, a positive acceleration voltage is applied to the plasma electrode 31 from a DC power source (not shown). A positive extraction voltage lower than the potential of the plasma electrode 31 is applied to the extraction electrode 32 from a DC power source (not shown). The ground electrode 33 is electrically grounded.

More specifically, in the extraction electrode system 24, each of the electrodes 31 to 33 has an ion beam extraction region 26 having a size larger than the size including the substrate 6 and the region in which the substrate 6 is scanned (FIG. 4, FIG. 4). (See FIG. 5). The ion beam extraction region 26 is a region having a number of openings (ion extraction openings) such as holes and slits through which the ion beam 28 is extracted. For example, the ion beam extraction region 26 shown in FIG. 5 has a large number of holes 34, and the ion beam extraction region 26 shown in FIG. 6 has a large number of slits 37. As an example of dimensions, if the diameter of the substrate 6 is 300 mm, the scan width W _S is 80 mm, height and width of the ion beam extraction region 26 is 400 mm × 400 mm. However, it is not limited to this.

  In this example, the three electrodes 31 to 33 have substantially the same configuration except for the cooling pipes 40 and 41. Therefore, the plasma electrode 31 represents the ion beam extraction region 26 portion. The plan view is shown in FIG. 4 or FIG.

  Each of the electrodes 31 to 33 may have a large number of holes 34 for extracting the ion beam 28 as in the examples shown in FIGS. 3 and 4, or the ion beam 28 as in the example shown in FIG. You may have many slits 37 for drawer | drawing-out.

  Further, as in this example, a cooling pipe 40 for cooling the electrode 31 may be provided on at least the plasma electrode 31 of the electrodes constituting the extraction electrode system 24. In the cooling pipe 40, for example, a coolant such as cooling water flows. The same applies to a cooling pipe 41 to be described later.

  Since the plasma electrode 31 has the largest heat input from the plasma generation unit 22 among the electrodes, even if the extraction electrode system 24 including the plasma electrode 31 is increased in area by providing a cooling pipe 40 at least in the plasma electrode 31. The thermal distortion of the plasma electrode 31 can be suppressed. As a result, it is possible to suppress the deterioration of the current density distribution of the ion beam 28 due to the thermal distortion of the electrode and the resulting reduction in the uniformity of the substrate processing.

In this example, a plurality of cooling pipes 40 are arranged on the plasma electrode 31 at a constant pitch in the X direction. Since the ion beam 28 is not extracted from the portion where the cooling pipe 40 is provided, the extraction electrode system 24 includes a plurality of holes 34 (see FIG. 4) or a plurality of slits 37 (see FIG. 4). FIG. 5) have a region a ₁ in which the ion beam 28 is drawn out, and a region B ₁ which have cooling pipe 40 is provided not drawn ion beam 28, X-direction in the predetermined direction (in this example) Are arranged alternately with a predetermined period P ₁ .

  You may provide the cooling pipe which cools the said electrode also in the electrode downstream from the plasma electrode 31 as needed. In the example shown in FIG. 3, the extraction electrode 32 is also provided with a plurality of cooling pipes 41. Each cooling pipe 41 is arranged corresponding to the position of each cooling pipe 40.

An example of the current density distribution at the position of the substrate 6 of the ion beam 28 extracted from the ion source 20 having the extraction electrode system 24 having the two types of regions A ₁ and B ₁ as described above is shown in FIG. The current density distribution is pulsating at a constant period P _2. The peak portion A ₂ is a portion corresponding to the region A ₁ where the ion beam of the extraction electrode system 24 is extracted, and the valley portion B ₂ is a portion corresponding to the region B ₁ where the ion beam of the extraction electrode system 24 is not extracted. . The relationship between the period P ₂ and the period P ₁ of the extraction electrode system 24 can often be considered as P ₁ ≈P ₂ except in special cases (for example, when the divergence of the ion beam 28 is large). .

The current density distribution shown in FIG. 6 is merely an example, and the relationship between the widths of the two regions A ₁ and B ₁ of the extraction electrode system 24 and the ion beam extracted from each hole and slit in each region A ₁ . A current density distribution with smaller pulsation, a current density distribution with larger pulsation, and other current density distributions can be realized depending on the divergence angle.

  Even if the ion beam 28 drawn from the ion source 20 by providing a cooling pipe in the extraction electrode system 24 has a current density distribution that pulsates as described above, in this ion beam irradiation apparatus, the substrate 6 Thus, the beam current density on the substrate 6 can be averaged and the beam irradiation amount on the substrate 6 can be made uniform.

  Referring to FIG. 1 again, the extraction direction of the ion beam 28 from the ion source 20 is a direction that intersects the gravity direction G (for example, a direction that is substantially orthogonal as in the example shown in FIG. 1 or an oblique direction). ) Is preferable. By doing so, it is not necessary to place the substrate 6 directly under the ion source 20, and even if foreign matter (dust) such as a peeling piece of a deposit inside the ion source 20 falls from the ion source 20, it is mixed into the substrate 6. It becomes difficult. As a result, it is possible to suppress the occurrence of processing defects of the substrate 6 due to foreign matter contamination.

  Next, an embodiment of the ion beam irradiation method according to the present invention will be described. Using the ion beam irradiation apparatus as described above (however, in the case of this method, it is not necessary to use the control device 50. The substrate 6 may be rotated and scanned in the irradiation region of the ion beam 28 as described above to irradiate the entire surface of the substrate 6 with the ion beam 28.

  Also in the case of this ion beam irradiation method, with respect to the substrate 6 held by the holder 8, the size of the substrate 6 at the position of the substrate 6 is larger than the size including the substrate 6 and the region where the substrate 6 is scanned. The substrate 6 is rotated and scanned in the irradiation region of the ion beam 28 by using an ion beam irradiation apparatus having an ion beam supply unit 18 (for example, the ion source 20) that irradiates the beam 28. As in the case of the ion beam irradiation apparatus, the time required for processing the substrate 6 is shortened and the processing efficiency of the substrate 6 is improved with respect to both scanning and rotation of the substrate 6. be able to.

4 Vacuum container 6 Substrate 8 Holder 10 Rotating mechanism 14 Scan mechanism 18 Ion beam supply unit 20 Ion source 22 Plasma generating unit 23 Plasma 24 Extraction electrode system 26 Ion beam extraction region 28 Ion beam 31 Plasma electrode 32 Extraction electrode 33 Ground electrode 40, 41 Cooling pipe 50 Control device

Claims (6)

An apparatus for irradiating a substrate with an ion beam in a vacuum atmosphere,
A vacuum vessel that is evacuated to vacuum,
A holder that is housed in the vacuum vessel and holds a substrate;
A rotation mechanism for rotating the holder and the substrate held by the holder around the center of the substrate;
A scanning mechanism for mechanically reciprocatingly scanning the holder, the substrate held by the holder, and the rotating mechanism;
An ion beam supply unit that irradiates an ion beam having a size larger than a size including a region where the substrate and the substrate are scanned with respect to the substrate held by the holder;
A control device having a function of controlling the rotation mechanism and the scanning mechanism to rotate and scan the substrate within the ion beam irradiation region to irradiate the entire surface of the substrate with the ion beam. An ion beam irradiation apparatus characterized by that.   The ion beam irradiation apparatus according to claim 1, wherein the scan by the scan mechanism is linear.   The ion beam supply unit is an ion source having a plasma generation unit that generates plasma and an extraction electrode system that extracts an ion beam from the plasma by the action of an electric field, and the extraction electrode system includes the substrate and the ion source 3. The ion beam irradiation apparatus according to claim 1, further comprising an ion beam extraction region having a size larger than a size including a region to be scanned by the substrate.   The ion beam irradiation apparatus according to claim 3, wherein an ion beam extraction direction from the ion source is a direction intersecting a gravity direction.   5. The electrode on the most plasma side among the electrodes constituting the extraction electrode system of the ion source is called a plasma electrode, and at least the plasma electrode is provided with a cooling pipe for cooling the electrode. Ion beam irradiation device. A method of irradiating a substrate with an ion beam in a vacuum atmosphere,
A vacuum vessel that is evacuated to vacuum,
A holder that is housed in the vacuum vessel and holds a substrate;
A rotation mechanism for rotating the holder and the substrate held by the holder around the center of the substrate;
A scanning mechanism for mechanically reciprocatingly scanning the holder, the substrate held by the holder, and the rotating mechanism;
An ion beam supply unit that irradiates the substrate held by the holder with an ion beam having a size larger than a size including a region in which the substrate and the substrate are scanned in the position of the substrate; Using an ion beam irradiation device with the structure
An ion beam irradiation method comprising irradiating an entire surface of the substrate with the ion beam by rotating and scanning the substrate within the ion beam irradiation region.

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