JP2016195241A5 - - Google Patents

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JP2016195241A5
JP2016195241A5 JP2016027459A JP2016027459A JP2016195241A5 JP 2016195241 A5 JP2016195241 A5 JP 2016195241A5 JP 2016027459 A JP2016027459 A JP 2016027459A JP 2016027459 A JP2016027459 A JP 2016027459A JP 2016195241 A5 JP2016195241 A5 JP 2016195241A5
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JP
Japan
Prior art keywords
breakdown voltage
slightly
examples
value width
higher tendency
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JP2016027459A
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Japanese (ja)
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JP2016195241A (en
JP6239017B2 (en
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Priority to US15/084,119 priority Critical patent/US9530846B2/en
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表３に示したように、実施例２は実施例１に比べ、耐圧がやや低く、実施例３は実施例２に比べ、やはり耐圧が低かった。さらに、（００２）面半値幅は、実施例２，３共に実施例１に比べてやや高い傾向を示した。 As shown in Table 3, the breakdown voltage of Example 2 was slightly lower than that of Example 1, and the breakdown voltage of Example 3 was also lower than that of Example 2. Further, the (002) plane half-value width showed a slightly higher tendency in Examples 2 and 3 than in Example 1.

JP2016027459A 2015-03-31 2016-02-16 Nitride semiconductor substrate Active JP6239017B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/084,119 US9530846B2 (en) 2015-03-31 2016-03-29 Nitride semiconductor substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015072914 2015-03-31
JP2015072914 2015-03-31

Publications (3)

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JP2016195241A JP2016195241A (en) 2016-11-17
JP2016195241A5 true JP2016195241A5 (en) 2017-03-02
JP6239017B2 JP6239017B2 (en) 2017-11-29

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JP2016027459A Active JP6239017B2 (en) 2015-03-31 2016-02-16 Nitride semiconductor substrate

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JP (1) JP6239017B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6925117B2 (en) * 2016-11-18 2021-08-25 エア・ウォーター株式会社 Manufacturing method of compound semiconductor substrate and compound semiconductor substrate
JP2019125737A (en) * 2018-01-18 2019-07-25 株式会社サイオクス Nitride semiconductor epitaxial substrate
JP7100871B6 (en) * 2018-03-02 2022-08-17 国立大学法人東海国立大学機構 Method for manufacturing group III nitride semiconductor device
US11515408B2 (en) 2020-03-02 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Rough buffer layer for group III-V devices on silicon

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484049B (en) * 2009-08-07 2015-05-20 日本碍子株式会社 Epitaxial Substrate For Semiconductor Element, Method For Manufacturing Epitaxial Substrate For Semiconductor Element, And Semiconductor Element
JP2012015304A (en) * 2010-06-30 2012-01-19 Sumitomo Electric Ind Ltd Semiconductor device
JP5891650B2 (en) * 2011-08-18 2016-03-23 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP5465295B2 (en) * 2012-08-31 2014-04-09 富士通株式会社 Compound semiconductor device and manufacturing method thereof
JP6055325B2 (en) * 2013-01-30 2016-12-27 シャープ株式会社 Method for manufacturing nitride semiconductor crystal
JP6108609B2 (en) * 2013-04-25 2017-04-05 クアーズテック株式会社 Nitride semiconductor substrate
JP5787417B2 (en) * 2013-05-14 2015-09-30 コバレントマテリアル株式会社 Nitride semiconductor substrate
JP6261523B2 (en) * 2015-01-08 2018-01-17 信越半導体株式会社 Method for manufacturing epitaxial substrate for electronic device, and method for manufacturing electronic device

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