JP2016173267A - Radiation detection assembly, radiation detection system, formation method of scintillator layer, and manufacturing method of radiation detection assembly - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technology capable of improving detection quantum efficiency of a radiation detection assembly.SOLUTION: A radiation detection assembly comprises a sensor panel having a pixel array containing a plurality of photoelectric conversion elements, and a scintillator layer in which a plurality of columnar crystals for converting a radiation into light are arranged so as to cover the whole area of the pixel array. The scintillator layer includes a first part, and a second part positioned between the first part and the sensor panel. Each of the plurality of columnar crystals extends in a first direction in the first part, and extends in a second direction which is different from the first direction in the second part.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a radiation detection apparatus, a radiation detection system, a scintillator layer forming method, and a radiation detection apparatus manufacturing method.

  A radiation detection apparatus having a scintillator layer and a sensor panel and detecting light converted from radiation by the scintillator layer with a sensor panel is known. Such a radiation detection apparatus is required to improve the utilization efficiency of incident radiation, that is, the detection quantum efficiency (DQE). Patent Document 1 proposes a radiation detection apparatus in which a scintillator layer is formed of a columnar crystal scintillator. In this scintillator layer, in order to improve DQE, the columnar crystal extends in a direction perpendicular to the surface of the sensor panel at the center position of the sensor panel, and the columnar crystal is inclined toward the center of the sensor panel at other positions. Yes.

JP 2009-236704 A

  In the radiation detection apparatus of Patent Document 1, the columnar crystal of the scintillator is orthogonal to the surface of the sensor panel at the center portion of the sensor panel. Therefore, part of the radiation incident from the direction orthogonal to the surface of the sensor panel passes through the gaps between the columnar crystals, and sufficient detection quantum efficiency cannot be obtained. An object of this invention is to provide the technique which improves the detection quantum efficiency of a radiation detection apparatus.

  In view of the above problems, a sensor panel having a pixel array including a plurality of photoelectric conversion elements, and a scintillator layer in which a plurality of columnar crystals that convert radiation into light are arranged so as to cover the entire area of the pixel array, The scintillator layer includes a first portion and a second portion located between the first portion and the sensor panel, and each of the plurality of columnar crystals extends in the first direction in the first portion. There is provided a radiation detection apparatus, characterized in that the second part extends in a second direction different from the first direction.

  By the above means, a technique for improving the detection quantum efficiency of the radiation detection apparatus is provided.

The figure explaining the structural example of the radiation detection apparatus which concerns on some embodiment. The figure explaining the structural example of the radiation detection apparatus which concerns on other one part embodiment. The figure explaining the structural example of the scintillator layer which concerns on some embodiment. The figure explaining the structural example of the scintillator layer which concerns on some other embodiment. The figure explaining the formation method of the scintillator layer concerning some embodiments. The figure explaining the structural example of the radiation detection apparatus which concerns on other one part embodiment. The figure explaining the structural example of the scintillator layer which concerns on some other embodiment. The figure explaining the structural example of the radiation detection system which concerns on some embodiment.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. Throughout the various embodiments, similar elements are given the same reference numerals, and redundant descriptions are omitted. In addition, each embodiment can be appropriately changed and combined. Some embodiments of the present invention relate to a radiation detection apparatus used in, for example, a medical diagnostic imaging apparatus, a nondestructive inspection apparatus, and the like, and these radiation detection apparatuses are used in, for example, radiation imaging. In this specification, radiation includes X-rays, alpha rays, beta rays, gamma rays, neutron rays and the like.

<Configuration Example of Radiation Detection Device 100>
With reference to FIG. 1, the structural example of the radiation detection apparatus 100 which concerns on some embodiment of this invention is demonstrated. 1A is a plan view of the radiation detection apparatus 100, and FIG. 1B is a cross-sectional view of the radiation detection apparatus 100 taken along line AA in FIG. For the sake of explanation, some of the components shown in FIG. 1B are omitted in FIG. In FIG. 1A, the housing 110 is shown transparently, and the edge of the scintillator layer 131 is shown by a broken line.

  The radiation detection apparatus 100 includes a housing 110, a sensor panel 120, a scintillator panel 130, and a circuit board 170, among others. The sensor panel 120, the scintillator panel 130, and the circuit board 170 are stored in the housing 110. The scintillator panel 130 converts radiation incident through the housing 110 into electromagnetic waves (for example, visible light) in a wavelength band that can be detected by the sensor panel 120. Radiation is applied to the radiation detection apparatus 100 from the scintillator panel 130 side (upper side in FIG. 1B). That is, the radiation detection apparatus 100 is a so-called surface irradiation type radiation detection apparatus. The sensor panel 120 converts electromagnetic waves in a specific wavelength band (for example, visible light) into electrical signals. The circuit board 170 is provided with a signal processing circuit such as a drive circuit for driving the sensor panel 120 and a readout circuit for reading an electrical signal from the sensor panel 120.

  For the sensor panel 120, for example, a CMOS (complementary metal oxide semiconductor) sensor is used. The sensor panel 120 may have an existing configuration, and an example thereof will be briefly described below. The sensor panel 120 includes one sensor base 121 and a plurality of sensor substrates 122. Each sensor substrate 122 has a pixel array in which a plurality of pixels are arranged in a matrix (matrix). Each pixel includes a photoelectric conversion element 123 and a switching element (not shown) formed on the semiconductor substrate 126. The photoelectric conversion element 123 is formed by an impurity region in the semiconductor substrate 126. The switching element is, for example, a MOS transistor, and is formed by two impurity regions formed in the semiconductor substrate 126 and a gate electrode that covers a portion between them. A plurality of these pixels constitute a pixel array. The pixel array is covered with a sensor protective layer 124. The sensor protection layer 124 protects the pixel array from the influence from the outside of the sensor substrate 122. The sensor protective layer 124 is formed of a resin such as polyimide. Of the surfaces of the sensor substrate 122, the surface on which the photoelectric conversion element 123 is disposed (the upper surface in FIG. 1B) is referred to as a light receiving surface. Similarly, the surface of the sensor panel on which the photoelectric conversion element 123 is disposed is referred to as a light receiving surface.

  The plurality of sensor substrates 122 are arranged on one surface of the sensor base 121 without a gap, and as a result, the pixel arrays of the plurality of sensor substrates 122 form an integrated pixel array. An integrated pixel array formed by the pixel arrays of the plurality of sensor substrates 122 is referred to as a pixel array of the sensor panel 120. The sensor base 121 and the back surface (surface opposite to the light receiving surface) of each sensor substrate 122 are fixed to each other by an adhesive, for example.

  The scintillator panel 130 includes a scintillator layer 131, a scintillator base 132, and a scintillator protection layer 135. The scintillator layer 131 is composed of, for example, a scintillator such as CsI: Tl obtained by adding thallium (Tl) as an activator to cesium iodide (CsI) as a main component. Instead of this, the scintillator may be made of, for example, a material mainly composed of an alkali halide. One surface (upper surface in FIG. 1B) of the scintillator layer 131 is in contact with the scintillator base 132. A surface of the scintillator layer 131 that is not in contact with the scintillator base 132 is covered with a scintillator protection layer 135. The scintillator protection layer 135 has a function of protecting the scintillator layer 131 from moisture and the like. Examples of the material for the scintillator protective layer 135 include organic resins such as silicone resin, acrylic resin, and epoxy resin, organic films such as polyparaxylylene, and hot-melt resins such as polyester, polyolefin, and polyamide.

  The scintillator base 132 has a glass substrate 133 and a reflective layer 134. The reflective layer 134 is disposed between the glass substrate 133 and the scintillator layer 131. The reflection layer 134 reflects the component that travels toward the scintillator base 132 out of the light converted by the scintillator layer 131 toward the sensor panel 120.

  The light receiving surface of the sensor panel 120 and the surface of the scintillator panel 130 opposite to the scintillator base 132 (the lower surface in FIG. 1B) are fixed to each other by a coupling member 140. The coupling member 140 is, for example, an acrylic transparent adhesive material or a cured adhesive.

  Each sensor substrate 122 further has a wiring connection part 125 on one side thereof. One end of a wiring member 150 is attached to the wiring connection portion 125. The other end of the wiring member 150 is attached to the circuit board 170. The wiring array 150 electrically connects the pixel array of the sensor substrate 122 and the signal processing circuit of the circuit substrate 170 to each other.

  A joint portion between the sensor panel 120 and the scintillator panel 130 is sealed by a sealing member 160. The sealing member 160 has a frame shape that covers the entire circumference of the sensor panel 120 and the scintillator panel 130. The sealing member 160 further covers a joint portion between the wiring connection portion 125 and the wiring member 150. The sealing member 160 has a function of protecting a joint portion between the sensor panel 120 and the scintillator panel 130 from moisture or the like. As the material of the sealing member 160, a material having a low moisture permeability, for example, an epoxy resin, an acrylic resin, or the like is used.

<Configuration Example of Radiation Detection Device 200>
With reference to FIG. 2, the structural example of the radiation detection apparatus 200 which concerns on other one part embodiment of this invention is demonstrated. 2A is a plan view of the radiation detection apparatus 200, and FIG. 2B is a cross-sectional view of the radiation detection apparatus 200 taken along line BB in FIG. 2A. For the sake of explanation, some of the components shown in FIG. 2B are omitted in FIG. In FIG. 2A, the casing 110 is shown transparently and the edge of the scintillator layer 131 is shown by a broken line.

  The radiation detection apparatus 200 is different from the radiation detection apparatus 100 in that it includes a sensor panel 220 instead of the sensor panel 120, and other components may be the same. The sensor panel 220 may also have an existing configuration, and an example thereof will be briefly described below. The sensor panel 220 has a pixel array in which a plurality of pixels are arranged in a matrix (matrix). Each pixel includes a photoelectric conversion element 222 and a switching element (not shown) formed on a single insulating substrate 221. The photoelectric conversion element 222 is formed of amorphous silicon. The switching element is a TFT, for example, and is formed of amorphous silicon. A plurality of these pixels constitute a pixel array. The pixel array is covered with a sensor protective layer 124. Of the surfaces of the sensor panel 220, the surface on which the photoelectric conversion element 222 is disposed (the upper surface in FIG. 2B) is referred to as a light receiving surface. The sensor panel 220 further includes a plurality of wiring connection portions 125 on each of the four sides. One end of a wiring member 150 is attached to the wiring connection portion 125.

  Unlike the sensor panel 120, the sensor panel 220 does not require the sensor base 121 for attaching the sensor substrate 122. Therefore, the radiation may be applied to the radiation detection apparatus 200 from the sensor panel 220 side (the lower side in FIG. 2B). That is, the radiation detection apparatus 200 may be a so-called back-illuminated radiation detection apparatus.

<Configuration example of scintillator layer 131>
With reference to FIG. 3, the structural example of the scintillator layer 131 which the radiation detection apparatuses 100 and 200 have is demonstrated in detail. FIG. 3A is an enlarged view of a part of FIG. The scintillator layer 131 is composed of a plurality of columnar crystals 303 of the scintillator. The columnar crystal 303 is formed by evaporating a material such as CsI: Tl, CsI: Na, CsBr: Tl, NaI: Tl, LiI: Eu, KI: Tl on the scintillator base 132, for example. Each of the columnar crystals 303 converts radiation into light. The cross section of the scintillator layer 131 as shown in FIG. 3A is observed by, for example, an SEM (scanning electron microscope). In such a cross section, the cross-sections of the plurality of columnar crystals 303 have various sizes and shapes, and can be arranged at various intervals. However, in FIG. 3 (a), in order to simplify the description, it is assumed that the plurality of columnar crystals 303 have the same size and shape, and are arranged at regular intervals.

  The plurality of columnar crystals 303 are arranged so as to cover the entire area of the pixel array of the sensor panel 120. The scintillator layer 131 has a stacked structure including a plurality of layers including a first portion 301 and a second portion 302. In the following embodiment, an example in which the scintillator layer 131 is formed of two layers is handled, but the scintillator layer 131 may be formed of three or more layers. The second portion 302 is located between the first portion 301 and the sensor panel 120. Of the columnar crystal 303, a portion included in the first portion 301 is referred to as a first columnar portion of the columnar crystal 303, and a portion of the columnar crystal 303 included in the second portion 302 is referred to as a second columnar portion of the columnar crystal 303.

  The first columnar portions of the plurality of columnar crystals 303 extend in the direction of the normal line 304 on the surface of the sensor panel 120 over the entire area of the pixel array. Further, the second columnar portions of the plurality of columnar crystals 303 are inclined in the same direction (left direction in FIG. 3A) from the normal line 304 and extend in the same direction 305 over the entire area of the pixel array. Yes. By arranging the plurality of columnar crystals 303 in this way, it is possible to reduce the component that reaches the sensor panel 120 directly without hitting the columnar crystals 303 out of the radiation incident on the radiation detection apparatus 100 from the direction of the normal line 304. Furthermore, the plurality of columnar crystals 303 may be arranged such that these gaps overlap with any of the plurality of columnar crystals 303 in the plan view of the sensor panel 120. Thereby, the component of the radiation that reaches the sensor panel 120 directly without hitting the columnar crystal 303 can be further reduced. In addition, since the first columnar portion and the second columnar portion of the plurality of columnar crystals 303 extend in different directions, the radiation incident obliquely with respect to the normal line 304 is any of the plurality of columnar crystals 303. The part can be converted.

  The cross section shown in FIG. 3A corresponds to a plane stretched by the normal line 304 and a straight line passing through the direction 305 in which the second columnar portion of the columnar crystal 303 extends. This plane may be parallel to the rows or columns of the pixel array or may be inclined with respect to each of the rows and columns. In the present embodiment, this plane is assumed to be parallel to the rows of the pixel array. That is, the columnar crystal 303 extends parallel to a plane stretched by the normal line 304 and the row of the pixel array.

  Each of the first columnar portion and the second columnar portion of each columnar crystal 303 has a certain width except for the end portion. The end on the scintillator base 132 side of the columnar crystal 303 is, for example, a part in contact with the scintillator base 132. When the columnar crystal 303 is formed by vapor deposition, this end portion is a portion where the columnar crystal 303 starts growing. The end of the columnar crystal 303 on the sensor panel 120 side is, for example, a portion whose width becomes narrower toward the apex of the columnar crystal 303. When the columnar crystal 303 is formed by vapor deposition, this end is a portion where the columnar crystal 303 has finished growing. A portion excluding both ends of the columnar crystal 303 is referred to as a main portion.

  In order to describe the arrangement of the plurality of columnar crystals 303 in detail, various parameters are defined as shown in FIGS. 3 (a) and 3 (b). The following rules apply similarly to other configuration examples described later. FIG. 3B is a diagram in which two columnar crystals 303A and 303B adjacent to each other among the columnar crystals 303 shown in FIG. 3A are arranged on the xy plane. For explanation, FIG. 3B shows only the second columnar portion of the two columnar crystals 303A and 303B.

  The film thicknesses of the first portion 301 and the second portion 302 of the scintillator layer 131 are t_sc1 and t_sc2, respectively. This film thickness is the thickness of the first portion 301 and the second portion 302 along the normal line 304. In the present embodiment, the thickness of the main part of the columnar crystal 303 is referred to as the thickness of the scintillator layer 131. Since the main portion of the columnar crystal 303 occupies most of the entire columnar crystal 303, t_sc1 and t_sc2 are substantially equal to the film thicknesses of the first portion 301 and the second portion 302 of the scintillator layer 131.

  The average tilt angles of the first columnar portion and the second columnar portion of the plurality of columnar crystals 303 are θ_sc1 and θ_sc2, respectively. The inclination angle of each part of the columnar crystal 303 is an angle formed by the normal line 304 and the direction in which each part of the columnar crystal 303 extends. The first columnar portions of the plurality of columnar crystals 303 extend in the same direction over the entire area of the first portion 301, but the directions may vary. Therefore, the average value of the inclination angles of the first columnar portions of the plurality of columnar crystals 303 is defined as θ_sc1. The same applies to the average inclination angle θ_sc2 of the second columnar portions of the plurality of columnar crystals 303. The columnar crystals 303 used for calculating θ_sc1 and θ_sc2 may be, for example, representative columnar crystals 303 (for example, 50 columnar crystals 303) in the SEM observation region. In the example of FIG. 3, θ_sc1 = 0 ° and θ_sc2> 0 °.

  The width of the photoelectric conversion element 123 is w_pix. In the present embodiment, the width of the photoelectric conversion element 123 is measured on a plane stretched by the normal line 304 and a straight line passing through the direction 305 in which the columnar crystal 303 extends in the second portion 302. Alternatively, the width of the photoelectric conversion element 123 may be measured in the row direction of the pixel array or may be measured in the column direction. If the photoelectric conversion elements 123 constituting the pixel array have a plurality of types of widths, the width of a representative one of the photoelectric conversion elements 123 may be w_pix. When the photoelectric conversion element 123 is formed of an impurity region in the semiconductor substrate, the width of the impurity region functioning as a charge storage region may be w_pix.

  -Let the pitch of the photoelectric conversion element 123 be p_pix. The pitch of the photoelectric conversion elements 123 is a distance between the centers of the two adjacent photoelectric conversion elements 123. In the present embodiment, the pitch of the photoelectric conversion elements 123 is measured on a plane stretched by the normal line 304 and a straight line passing through the direction 305 in which the columnar crystal 303 extends in the second portion 302. Instead of this, the pitch of the photoelectric conversion elements 123 may be measured in the row direction of the pixel array, or may be measured in the column direction. If the width of two photoelectric conversion elements 123 adjacent to each other can take a plurality of types of values for each set of photoelectric conversion elements 123, a representative one of these values may be p_pix.

  The average intervals between the first columnar portions and the second columnar portions of the plurality of columnar crystals 303 are p_sc1 and p_sc2, respectively. In general, the interval between the first columnar portions of two columnar crystals 303 adjacent to each other can be different for each pair of columnar crystals 303. Therefore, for example, an average value of the interval between the first columnar portions of two columnar crystals 303 adjacent to each other in one SEM sectional view of the scintillator layer 131 is defined as p_sc1. The interval between each part of two columnar crystals 303 adjacent to each other is defined as an interval between two straight lines that pass through the center of each part of each columnar crystal 303 in the SEM sectional view and extend in the direction in which the columnar crystal 303 extends. It is distance.

  The average column diameters of the first columnar portion and the second columnar portion of the columnar crystal 303 are w_sc1 and w_sc2, respectively. In general, the column diameter of the first columnar portion of the columnar crystal 303 can be different for each columnar crystal 303. Further, the diameter of the first columnar portion of the columnar crystal 303 observed in the SEM sectional view depends on how much the SEM sectional view is displaced from the center of the columnar crystal 303 at which the first columnar portion of the columnar crystal 303 is cut. Can also be different. Therefore, for example, the average value of the column diameters of the first columnar portions of the plurality of columnar crystals 303 in one SEM cross-sectional view of the scintillator layer 131 is set to w_sc1. The plurality of columnar crystals 303 used for calculating the average value are, for example, the columnar crystals 303 observed in one SEM cross-sectional view at a predetermined ratio in descending order of the column diameter (for example, the top 20%). ) It may be selected. By calculating the average value in this way, the SEM cross section passes through a position away from the center, and therefore, the influence of the columnar crystal 303 observed as having a small column diameter in the SEM cross section can be mitigated. The same applies to the average column diameter w_sc2 of the second columnar portion of the columnar crystal 303.

Subsequently, in various embodiments, a relationship that the above-described parameters satisfy will be described. In some embodiments,
p_pix ≧ t_sc2 × tan (θ_sc2) (1)
Meet. The right side of this inequality is the length of the orthogonal projection of the second columnar portion of one columnar crystal 303 with respect to the light receiving surface of the sensor panel 120. This inequality means that the length of the orthogonal projection of the second columnar portion of one columnar crystal 303 does not exceed the pixel pitch.

In some embodiments,
p_pix−w_pix ≧ t_sc2 × tan (θ_sc2) (2)
Meet. The left side of this inequality is the width of the gap between the two adjacent photoelectric conversion elements 123. Therefore, this inequality means that the length of the orthogonal projection of the second columnar portion of one columnar crystal 303 does not exceed the width of the gap portion between the photoelectric conversion elements 123. When the inequality (2) is satisfied, the orthogonal projection of the second columnar portion of the single columnar crystal 303 does not extend over the plurality of photoelectric conversion elements 123. The light converted from radiation by the columnar crystal 303 travels along the columnar crystal 303. Therefore, the position where the light reaches the light receiving surface differs depending on the height of the scintillator layer 131 even if the radiation is irradiated toward the same position on the light receiving surface of the sensor panel 120. . By satisfying the inequality (2), it is possible to suppress the light from straddling the plurality of photoelectric conversion elements 123 due to the height of the scintillator layer 131 converted from radiation to light.

In some embodiments,
t_sc2 × sin (θ_sc2)> p_sc2-wa_sc2 (3)
Meet. The meaning of this equation will be described with reference to FIG. The x axis in FIG. 3B is parallel to the light receiving surface of the sensor panel 120, and the y axis is orthogonal to the light receiving surface. The point where the x component is the maximum among the main portions of the second columnar portion of the columnar crystal 303a is placed at the origin O. In this case, the coordinates of the point P at which the x component is minimum in the main part of the second columnar part of the columnar crystal 303a are (−t_sc2 × tan (θ_sc2) −w_sc2 / cos (θ_sc2), t_sc2). In addition, the coordinate of the point Q where the x component is maximum in the main part of the second columnar part of the columnar crystal 303b adjacent to the left side of the columnar crystal 303a is (−p_sc2 / cos (θ_sc2), 0). In order for the second columnar portion of the columnar crystal 303a and the second columnar portion of the columnar crystal 303b to overlap each other in plan view of the sensor panel 120, if the x component of the point P is smaller than the x component of the point Q Good. This condition is inequality (3). Therefore, if the scintillator layer 131 is formed so as to satisfy the inequality (3), it is possible to prevent the radiation incident on the scintillator layer 131 from the direction of the normal 304 from reaching the light receiving surface without hitting the columnar crystal 303.

<Another configuration example of the scintillator layer 131>
Next, with reference to FIG. 4, another configuration example of the scintillator layer 131 included in the radiation detection apparatuses 100 and 200 will be described in detail. 4 (a) and 4 (b) are enlarged views of a part of FIG. 1 (b). The scintillator layer 131 in FIG. 4A is composed of a plurality of columnar crystals 403 of the scintillator. Further, the scintillator layer 131 in FIG. 4B is composed of a plurality of columnar crystals 453 of the scintillator. Except as otherwise described below, the above description of the columnar crystal 303 applies to the columnar crystals 403 and 453 as well.

  The plurality of columnar crystals 403 are arranged so as to cover the entire area of the pixel array of the sensor panel 120. The first columnar portions of the plurality of columnar crystals 403 are inclined in the same direction (right direction in FIG. 4A) from the normal line 304 and extend in the same direction 401 over the entire area of the pixel array. Further, the second columnar portions of the plurality of columnar crystals 403 extend in the direction of the normal line 304 over the entire area of the pixel array. By arranging the plurality of columnar crystals 403 in this way, it is possible to reduce the component that reaches the sensor panel 120 directly without hitting the columnar crystal 403 out of the radiation incident on the radiation detection apparatus 100 from the direction of the normal line 304. Furthermore, the plurality of columnar crystals 403 may be arranged such that these gaps overlap with any of the plurality of columnar crystals 403 in plan view of the sensor panel 120. Thereby, the component of the radiation that reaches the sensor panel 120 directly without hitting the columnar crystal 403 can be further reduced. In the example of FIG. 4A, θ_sc1> 0 ° and θ_sc2 = 0 °.

  The cross section shown in FIG. 4A coincides with a plane stretched by the normal line 304 and a straight line passing through the direction 401 in which the first columnar portion of the columnar crystal 403 extends. This plane may be parallel to the rows or columns of the pixel array or may be inclined with respect to each of the rows and columns. In the present embodiment, this plane is assumed to be parallel to the rows of the pixel array. That is, the columnar crystal 403 extends parallel to a plane stretched by the normal line 304 and the row of the pixel array.

The scintillator layer 131 in FIG.
p_pix ≧ t_sc1 × tan (θ_sc1) (4)
p_pix−w_pix ≧ t_sc1 × tan (θ_sc1) (5)
t_sc1 × sin (θ_sc1)> p_sc1-wa_sc1 (6)
May satisfy at least one inequality. Inequalities (4) to (6) correspond to inequalities (1) to (3), respectively.

  Next, the scintillator layer 131 shown in FIG. The plurality of columnar crystals 453 are arranged so as to cover the entire area of the pixel array of the sensor panel 120. The first columnar portions of the plurality of columnar crystals 453 are inclined in the same direction (the right direction in FIG. 4B) from the normal line 304, and extend in the same direction 401 over the entire area of the pixel array. Further, the second columnar portions of the plurality of columnar crystals 453 are inclined in the same direction (leftward in FIG. 4B) from the normal line 304 and extend in the same direction 402 over the entire area of the pixel array. Yes. By arranging the plurality of columnar crystals 453 in this way, it is possible to reduce the component that reaches the sensor panel 120 directly without hitting the columnar crystals 453 out of the radiation incident on the radiation detection apparatus 100 from the direction of the normal line 304. Furthermore, the plurality of columnar crystals 453 may be arranged such that these gaps overlap with any of the plurality of columnar crystals 453 in plan view of the sensor panel 120. Thereby, the component of the radiation that reaches the sensor panel 120 directly without hitting the columnar crystal 453 can be further reduced. In the example of FIG. 4B, θ_sc1> 0 ° and θ_sc2> 0 °. θ_sc1 = θ_sc2, θ_sc1> θ_sc2, or θ_sc1 <θ_sc2 may be satisfied.

  The cross section shown in FIG. 4B corresponds to a plane stretched by the normal line 304 and a straight line passing through the direction 401 in which the first columnar portion of the columnar crystal 453 extends. Furthermore, a straight line passing through the direction 402 in which the second columnar portion of the columnar crystal 453 extends is also parallel to this plane. This plane may be parallel to the rows or columns of the pixel array or may be inclined with respect to each of the rows and columns. In the present embodiment, this plane is assumed to be parallel to the rows of the pixel array. That is, the columnar crystal 453 extends parallel to a plane stretched by the normal line 304 and the row of the pixel array.

  The scintillator layer 131 in FIG. 4B may satisfy at least one of the inequalities (1) to (6). Further, the first columnar portion and the second columnar portion of the columnar crystal 453 may be inclined to the opposite sides from the normal line 304 or may be inclined to the same side. The fact that the first columnar portion and the second columnar portion of the columnar crystal 453 are inclined to opposite sides means that the angle formed by these in a plan view of the sensor panel 120 is smaller than 90 °. The fact that the first columnar portion and the second columnar portion of the columnar crystal 453 are inclined to the same side means that the angle formed by these in a plan view of the sensor panel 120 is greater than 90 °. Here, in the plan view of the sensor panel 120, the angle formed by the first columnar portion and the second columnar portion refers to an angle measured around the coupling portion between the first columnar portion and the second columnar portion. The angle formed by the first columnar portion and the second columnar portion in plan view of the sensor panel 120 may be 0 °, 180 °, or greater than 0 ° and smaller than 180 °. It may be a value (for example, 90 °).

<Method for Forming Scintillator Layer 131>
Subsequently, a method of forming the scintillator layer 131 will be described with reference to FIG. The scintillator layer 131 is formed using the vapor deposition apparatus 500, for example. The vapor deposition apparatus 500 includes a rotating disk 501, a rotating disk rotating unit 502, a holder rotating unit 503, an inclination mechanism 504, a substrate holder 505, and a vapor deposition source 506. The turntable rotating unit 502 can rotate the turntable 501 using a straight line parallel to the normal line of the surface of the turntable 501 as a rotation axis 507. One end of the holder rotating unit 503 is attached to the turntable 501, and the other end can hold the substrate holder 505 via the tilt mechanism 504. The holder rotating unit 503 can rotate the substrate holder 505 using a straight line parallel to the rotating shaft 507 of the rotating disk rotating unit 502 as a rotating shaft 508. The tilt mechanism 504 can hold the substrate holder 505 in a state where the substrate holder 505 is tilted at an arbitrary angle with respect to the rotation shaft 508 of the holder rotating unit 503. The substrate holder 505 holds the substrate on which the scintillator is deposited. The deposition source 506 supplies a scintillator material.

  The turntable rotation unit 502 and the holder rotation unit 503 can independently rotate the turntable 501 and the substrate holder 505, respectively. The rotating shaft 507 of the rotating disk rotating unit 502 and the rotating shaft 508 of the holder rotating unit 503 are shifted from each other. When the turntable rotating unit 502 rotates the turntable 501, the substrate holder 505 attached to the turntable 501 also rotates around the rotation shaft 507. Further, when the holder rotating unit 503 rotates the substrate holder 505, the substrate holder 505 rotates about the rotation axis 508. The holder rotating unit 503 may rotate the substrate holder 505 at a constant speed, or may be rotated while changing the speed at a constant period.

  A method for forming the scintillator layer 131 composed of a plurality of columnar crystals 303 shown in FIG. First, the scintillator base 132 is attached to the substrate holder 505. An angle formed between the normal line 509 of the surface of the scintillator base 132 after the attachment and the rotation shaft 508 of the holder rotation unit 503 is set as θ_sub. First, the substrate holder 505 is held by the tilt mechanism 504 so that θ_sub> 0 ° (that is, the scintillator base 132 is tilted with respect to the rotation shaft 508 of the holder rotating unit 503). In this state, while the inside of the apparatus is evacuated and the columnar crystal material is supplied from the vapor deposition source 506, the rotating disk rotating unit 502 and the holder rotating unit 503 rotate the rotating disk 501 and the substrate holder 505, respectively. As a result, the first portion 301 of the scintillator layer 131 is formed. After that, the rotation of the rotating disk 501 by the rotating disk rotating unit 502 is stopped, and the substrate holder 505 is rotated by the holder rotating unit 503 while the columnar crystal material is supplied from the vapor deposition source 506. As a result, the second portion 302 of the scintillator layer 131 is formed.

  Next, a method for forming the scintillator layer 131 composed of a plurality of columnar crystals 403 shown in FIG. First, the scintillator base 132 is attached to the substrate holder 505, and the substrate holder is moved by the tilt mechanism 504 so that θ_sub> 0 ° (that is, the scintillator base 132 is tilted with respect to the rotation shaft 508 of the holder rotating unit 503). 505 is held. Thereafter, the substrate holder 505 is rotated by the holder rotating unit 503 while the rotating plate 501 is not rotated by the rotating plate rotating unit 502 and the inside of the apparatus is evacuated and the columnar crystal material is supplied from the vapor deposition source 506. . As a result, the first portion 301 of the scintillator layer 131 is formed. Thereafter, while the columnar crystal material is being supplied from the vapor deposition source 506, the rotating plate 501 and the holder rotating unit 503 rotate the rotating plate 501 and the substrate holder 505, respectively. As a result, the second portion 302 of the scintillator layer 131 is formed.

  Next, a method for forming the scintillator layer 131 composed of a plurality of columnar crystals 453 shown in FIG. 4B will be described. First, the scintillator base 132 is attached to the substrate holder 505, and the substrate holder is moved by the tilt mechanism 504 so that θ_sub> 0 ° (that is, the scintillator base 132 is tilted with respect to the rotation shaft 508 of the holder rotating unit 503). 505 is held. After that, while the inside of the apparatus is evacuated and the columnar crystal material is supplied from the vapor deposition source 506, the rotating disk rotating unit 502 and the holder rotating unit 503 rotate the rotating disk 501 and the substrate holder 505, respectively. As a result, the first portion 301 of the scintillator layer 131 is formed. Thereafter, the inclination state of the scintillator base 132 with respect to the rotation shaft 508 of the holder rotating unit 503 (that is, at least one of the inclination direction and the inclination angle) is changed. Even after the change, θ_sub> 0 ° (that is, the scintillator base 132 is inclined with respect to the rotating shaft 508 of the holder rotating unit 503). Subsequently, while the columnar crystal material is being supplied from the vapor deposition source 506, the rotating plate 501 and the holder rotating unit 503 rotate the rotating plate 501 and the substrate holder 505, respectively. As a result, the second portion 302 of the scintillator layer 131 is formed.

  The rotation speed of the rotating disk rotating unit 502 and the holder rotating unit 503, the fluctuation of the rotating speed, the tilt angle θ_sub of the substrate holder 505, and the material from the evaporation source 506 so that the columnar crystals 303, 403, and 453 have the parameters described above. The supply amount is adjusted as appropriate. The radiation detection device 100 or 200 is manufactured by combining the scintillator layer 131 and the sensor panel 120 or 220 formed in this way by an existing method.

<Configuration Example of Radiation Detection Device 600>
With reference to Fig.6 (a), the structural example of the radiation detection apparatus 600 which concerns on some other embodiment of this invention is demonstrated. The plan view of the radiation detection apparatus 600 is the same as the plan view of the radiation detection apparatus 100 shown in FIG. FIG. 6A is a cross-sectional view of the radiation detection apparatus 600 taken along line AA in FIG.

  The radiation detection apparatus 600 is different from the radiation detection apparatus 100 in that it includes a scintillator unit 630 instead of the scintillator panel 130, and the other points may be the same as the radiation detection apparatus 100. The scintillator unit 630 converts the radiation incident through the housing 110 into electromagnetic waves (for example, visible light) in a wavelength band that can be detected by the sensor panel 120.

  The scintillator portion 630 includes a scintillator layer 631 and a scintillator protection layer 632. The scintillator layer 631 is made of, for example, a scintillator such as CsI: Tl obtained by adding thallium (Tl) as an activator to cesium iodide (CsI) as a main component. Instead of this, the scintillator may be made of, for example, a material mainly composed of an alkali halide. One surface (the lower surface in FIG. 6A) of the scintillator layer 631 is in contact with the sensor panel 120. A surface of the scintillator layer 631 that is not in contact with the sensor panel 120 is covered with a scintillator protection layer 632. The scintillator protection layer 632 has a function of protecting the scintillator layer 631 from moisture and the like. Examples of the material for the scintillator protective layer 632 include organic resins such as silicone resins, acrylic resins, and epoxy resins, organic films such as polyparaxylylene, hot melt resins such as polyesters, polyolefins, and polyamides, and aluminum sheets. Is used. The scintillator protective layer 632 may have a reflective layer such as a white PET (polyethylene terephthalate) film on the scintillator layer 631 side. The scintillator protection layer 632 further covers a portion of the surface of the sensor panel 120 around the scintillator layer 631 from the side surface of the scintillator layer 631. Therefore, the radiation detection apparatus 600 may not have the sealing member 160.

<Configuration Example of Radiation Detection Device 650>
With reference to FIG.6 (b), the structural example of the radiation detection apparatus 650 which concerns on some other embodiment of this invention is demonstrated. The plan view of the radiation detection device 650 is the same as the plan view of the radiation detection device 200 shown in FIG. FIG. 6B is a cross-sectional view of the radiation detection apparatus 650 taken along the line BB in FIG. The radiation detection apparatus 650 shown in FIG. 6B is different from the radiation detection apparatus 600 in that the sensor panel 220 of the radiation detection apparatus 200 is provided instead of the sensor panel 120 of the radiation detection apparatus 600. It may be the same as device 600.

<Configuration Example of Scintillator Layer 631>
With reference to FIG. 7, the structural example of the scintillator layer 631 which the radiation detection apparatuses 600 and 650 have is demonstrated in detail. FIG. 7A is an enlarged view of a part of FIG. The scintillator layer 631 shown in FIG. 7A is composed of a plurality of columnar crystals 703 of the scintillator. The columnar crystal 703 is formed by evaporating a material such as CsI: Tl, CsI: Na, CsBr: Tl, NaI: Tl, LiI: Eu, KI: Tl on the sensor panel 120, for example. Each of the columnar crystals 703 converts radiation into light.

  The plurality of columnar crystals 703 are arranged so as to cover the entire area of the pixel array of the sensor panel 120. The scintillator layer 631 has a stacked structure including a plurality of layers including a first portion 701 and a second portion 702. In the following embodiment, an example in which the scintillator layer 631 is formed of two layers is handled, but the scintillator layer 631 may be formed of three or more layers. The second portion 702 is located between the first portion 701 and the sensor panel 120. Of the columnar crystal 703, a portion included in the first portion 701 is referred to as a first columnar portion of the columnar crystal 703, and a portion of the columnar crystal 703 included in the second portion 702 is referred to as a second columnar portion of the columnar crystal 703. The columnar crystal 703 is different from the columnar crystal 403 of FIG. 4A in that the end far from the sensor panel 120 is the growth end portion, and may be the same as the columnar crystal 403 in other points. Therefore, redundant description of the columnar crystal 703 is omitted.

  FIG. 7B is an enlarged view of a part of FIG. The scintillator layer 631 shown in FIG. 7B is composed of a plurality of columnar crystals 713 of the scintillator. The columnar crystal 713 is different from the columnar crystal 303 in FIG. 3A in that the end far from the sensor panel 120 is the growth end portion, and may be the same as the columnar crystal 303 in other points. Therefore, a duplicate description of the columnar crystal 713 is omitted.

  FIG. 7C is an enlarged view of a part of FIG. The scintillator layer 631 shown in FIG. 7C is composed of a plurality of columnar crystals 723 of the scintillator. The columnar crystal 723 is different from the columnar crystal 453 of FIG. 4B in that the end far from the sensor panel 120 is a growth end portion, and may be the same as the columnar crystal 453 in other points. Therefore, a duplicate description of the columnar crystal 723 is omitted.

  The cross section shown in FIG. 7A coincides with a plane stretched by the normal line 704 and a straight line passing through the direction 705 in which the first columnar portion of the columnar crystal 703 extends. This plane may be parallel to the rows or columns of the pixel array or may be inclined with respect to each of the rows and columns. In the present embodiment, this plane is assumed to be parallel to the rows of the pixel array. That is, the columnar crystal 703 extends parallel to a plane stretched by the normal line 704 and the row of the pixel array.

  Each of the first columnar portion and the second columnar portion of each columnar crystal 703 has a certain width except for the end portion. The end on the sensor substrate 122 side of the columnar crystal 703 is, for example, a portion in contact with the sensor substrate 122. When the columnar crystal 703 is formed by vapor deposition, this end is a portion where the columnar crystal 703 has started to grow. The end portion on the scintillator protection layer 632 side of the columnar crystal 703 is, for example, a portion whose width becomes narrower toward the apex of the columnar crystal 703. When the columnar crystal 703 is formed by vapor deposition, this end portion is a portion where the columnar crystal 703 has finished growing. A portion excluding both ends of the columnar crystal 703 is referred to as a main portion.

<First Example of Radiation Detection Device 100>
A first embodiment of the radiation detection apparatus 100 of FIG. 1 will be described below. The material of the sensor protective layer 124 is polyimide, and the thickness thereof is 5 μm. The width w_pix of the photoelectric conversion element 123 is 220 μm, and the pitch p_pix of the photoelectric conversion element 123 is 220 μm. The scintillator layer 131 is composed of a columnar crystal 303 as shown in FIG. The material of the columnar crystal 303 is CsI: Tl. The scintillator layer 131 satisfies θ_sc1 = 0 °, θ_sc2 = 20 °, and t_sc1 = 400 μm. Such a scintillator layer 131 is formed as follows. The scintillator base 132 is attached to the vapor deposition apparatus 500 of FIG. 5 so that θ_sub = 30 °. The first portion 301 of the scintillator layer 131 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 30 rpm and the rotation speed by the holder rotation unit 503 to 30 rpm. Thereafter, the second portion 302 of the scintillator layer 131 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 0 rpm and the rotation speed by the holder rotation unit 503 to 30 rpm. As the scintillator protective layer 135, polyparaxylylene having a thickness of 10 μm is used. As the coupling member 140, an acrylic transparent adhesive having a thickness of 25 um is used. An epoxy resin is used as the sealing member 160.

  The characteristics of the first embodiment of the radiation detection apparatus 100 were evaluated. Specifically, DQE and MTF (Modulation Transfer Function) were measured using the reference quality RQA5 defined by IEC (International Electrotechnical Commission) 62220-1, 61267. When radiation was irradiated from the scintillator panel 130 side (upper side of FIG. 1B) of the radiation detection apparatus 100 so as to be orthogonal to the light receiving surface, the DQE was 0.73 (0 lp / mm), and the MTF was 0.32. (2 lp / mm).

<Comparative example of radiation detector>
The same characteristic evaluation was performed for the radiation detection apparatus of the comparative example. The radiation detection apparatus of the comparative example differs from the first embodiment of the radiation detection apparatus 100 only in that θ_sc1 = θ_sc2 = 0 ° (that is, the columnar crystal is orthogonal to the light receiving surface). In the comparative radiation detection apparatus, DQE was 0.69 (0 lp / mm), and MTF was 0.32 (2 lp / mm). That is, the first embodiment of the radiation detection apparatus 100 is superior in terms of DQE to the radiation detection apparatus of the comparative example.

<Second Embodiment of Radiation Detection Device 100>
A second embodiment of the radiation detection apparatus 100 of FIG. 1 will be described below. The difference of the radiation detection apparatus 100 from the first embodiment is that the scintillator layer 131 is constituted by a columnar crystal 453 as shown in FIG. 4B, and the other configuration is the same as that of the first embodiment. is there. The material of the columnar crystal 453 is CsI: Tl. The scintillator layer 131 satisfies θ_sc1 = 20 °, θ_sc2 = 20 °, and t_sc1 = 400 μm. Such a scintillator layer 131 is formed as follows. The scintillator base 132 is attached to the vapor deposition apparatus 500 of FIG. 5 so that θ_sub = 30 °. The first portion 301 of the scintillator layer 131 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 30 rpm and the rotation speed by the holder rotation unit 503 to 30 rpm. Thereafter, the inclination direction of the scintillator base 132 is set to the opposite side. The inclination angle of the scintillator base 132 is θ_sub = 30 °. Subsequently, the first portion 302 of the scintillator layer 131 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 30 rpm and the rotation speed by the holder rotation unit 503 to 30 rpm.

  The second embodiment of the radiation detection apparatus 100 was evaluated for characteristics similar to those of the first embodiment of the radiation detection apparatus 100. As a result, the DQE was 0.75 (0 lp / mm) and the MTF was 0.31 (2 lp / mm mm). That is, this example is superior in terms of DQE to the radiation detection apparatus of the comparative example.

<First Example of Radiation Detection Device 200>
A first embodiment of the radiation detection apparatus 200 of FIG. 2 will be described below. The material of the sensor protective layer 124 is polyimide, and the thickness thereof is 5 μm. The insulating substrate 221 is a glass substrate and has a thickness of 0.3 mm. The width w_pix of the photoelectric conversion element 123 is 150 μm, and the pitch p_pix of the photoelectric conversion element 123 is 170 μm. The configuration of the scintillator panel 130 is the same as that of the first embodiment of the radiation detection apparatus 100.

  The characteristics of the first embodiment of the radiation detection apparatus 200 were evaluated. Specifically, DQE and MTF were measured using reference quality RQA5 defined by IEC 62220-1, 61267. When radiation was irradiated from the sensor panel 220 side (the lower side of FIG. 2B) of the radiation detection apparatus 200 so as to be orthogonal to the light receiving surface, DQE was 0.71 (0 lp / mm), and the MTF was 0.00. 39 (2 lp / mm). That is, this example is superior in terms of DQE and MTF than the radiation detection apparatus of the comparative example.

<Second Embodiment of Radiation Detection Device 200>
A second embodiment of the radiation detection apparatus 200 of FIG. 2 will be described below. The configuration of the sensor panel 220 is the same as that of the first embodiment of the radiation detection apparatus 200. The configuration of the scintillator panel 130 is the same as that of the second embodiment of the radiation detection apparatus 100.

  When the same characteristic evaluation as that of the first example of the radiation detection apparatus 200 was performed on the second example of the radiation detection apparatus 200, the DQE was 0.72 (0 lp / mm), and the MTF was 0.38 (2 lp / mm). mm). That is, this example is superior in terms of DQE and MTF than the radiation detection apparatus of the comparative example.

<First Example of Radiation Detection Device 600>
A first embodiment of the radiation detection apparatus 600 of FIG. 6A will be described below. The configuration of the sensor panel 120 is the same as that of the first embodiment of the radiation detection apparatus 100. The scintillator layer 631 is composed of columnar crystals 703 as shown in FIG. The material of the columnar crystal 703 is CsI: Tl. The scintillator layer 631 satisfies θ_sc1 = 20 °, θ_sc2 = 0 °, and t_sc2 = 400 μm. Such a scintillator layer 631 is formed as follows. The sensor panel 120 is attached to the vapor deposition apparatus 500 of FIG. 5 so that θ_sub = 30 °. The second portion 702 of the scintillator layer 631 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 30 rpm and the rotation speed by the holder rotation unit 503 at 30 rpm. Thereafter, the first portion 701 of the scintillator layer 631 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 0 rpm and the rotation speed by the holder rotation unit 503 to 30 rpm. As the scintillator protective layer 632, polyparaxylylene having a thickness of 10 μm is used.

  When the same characteristic evaluation as that of the first example of the radiation detection apparatus 100 was performed on the first example of the radiation detection apparatus 600, the DQE was 0.72 (0 lp / mm) and the MTF was 0.33 (2 lp / mm). mm). That is, this example is superior in terms of DQE and MTF than the radiation detection apparatus of the comparative example.

<Second Embodiment of Radiation Detection Device 600>
A second embodiment of the radiation detection apparatus 600 of FIG. 6A will be described below. The configuration of the sensor panel 120 is the same as that of the first embodiment of the radiation detection apparatus 100. The scintillator layer 631 is composed of columnar crystals 723 as shown in FIG. The material of the columnar crystal 723 is CsI: Tl. The scintillator layer 631 satisfies θ_sc1 = 20 °, θ_sc2 = 20 °, and t_sc2 = 400 μm. Such a scintillator layer 631 is formed as follows. The sensor panel 120 is attached to the vapor deposition apparatus 500 of FIG. 5 so that θ_sub = 30 °. The second portion 702 of the scintillator layer 631 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 30 rpm and the rotation speed by the holder rotation unit 503 at 30 rpm. Thereafter, the inclination direction of the scintillator base 132 is set to the opposite side. The inclination angle of the scintillator base 132 is θ_sub = 30 °. Subsequently, the first portion 701 of the scintillator layer 631 is formed by setting the rotation speed by the rotating disk rotation unit 502 to 30 rpm and the rotation speed by the holder rotation unit 503 to 30 rpm. As the scintillator protective layer 632, polyparaxylylene having a thickness of 10 μm is used.

  When the same characteristic evaluation as that of the first example of the radiation detection apparatus 100 was performed on the second example of the radiation detection apparatus 600, the DQE was 0.76 (0 lp / mm), and the MTF was 0.31 (2 lp / mm). mm). That is, this example is superior in terms of DQE to the radiation detection apparatus of the comparative example.

<First Example of Radiation Detection Device 650>
A first embodiment of the radiation detection apparatus 650 in FIG. 6B will be described below. The configuration of the sensor panel 220 is the same as that of the first embodiment of the radiation detection apparatus 200. The configuration of the scintillator unit 630 is the same as that of the first embodiment of the radiation detection apparatus 600.

  When the same characteristic evaluation as that of the first example of the radiation detection apparatus 200 was performed on the first example of the radiation detection apparatus 650, the DQE was 0.72 (0 lp / mm), and the MTF was 0.38 (2 lp / mm). mm). That is, this example is superior in terms of DQE and MTF than the radiation detection apparatus of the comparative example.

<Second Embodiment of Radiation Detection Device 650>
A second embodiment of the radiation detection apparatus 650 in FIG. 6B will be described below. The configuration of the sensor panel 220 is the same as that of the first embodiment of the radiation detection apparatus 200. The configuration of the scintillator section 630 is the same as that of the second embodiment of the radiation detection apparatus 600.

  When the same characteristic evaluation as that of the first example of the radiation detection apparatus 650 was performed on the second example of the radiation detection apparatus 650, the DQE was 0.72 (0 lp / mm), and the MTF was 0.39 (2 lp / mm). mm). That is, this example is superior in terms of DQE and MTF than the radiation detection apparatus of the comparative example.

<Embodiment of radiation detection system>
FIG. 8 is a diagram showing an application example of the above-described radiation detection apparatus to an X-ray diagnosis system (radiation detection system). X-ray 6060 as radiation generated in the X-ray tube 6050 (radiation source) passes through the chest 6062 of the subject or patient 6061 and enters the detection device 6040 which is any of the above-described radiation detection devices. This incident X-ray includes information inside the body of the patient 6061. The scintillator emits light in response to the incidence of X-rays, and this is photoelectrically converted to obtain electrical information. This information is converted into a digital signal, image-processed by an image processor 6070 serving as a signal processing unit, and can be observed on a display 6080 serving as a display unit of a control room. The radiation detection system includes at least a detection device and a signal processing unit that processes a signal from the detection device.

  This information can be transferred to a remote location by a transmission processing unit such as a telephone line 6090, displayed on a display 6081 serving as a display unit such as a doctor room in another location, or stored in a recording unit such as an optical disc. It is also possible for a doctor to make a diagnosis. Moreover, it can also record on the film 6110 used as a recording medium by the film processor 6100 used as a recording part.

100, 200, 600, 650: radiation detector, 120, 220: sensor panel, 131, 631: scintillator layer, 303, 403, 453, 703, 713, 723: columnar crystal

Claims (17)

A sensor panel having a pixel array including a plurality of photoelectric conversion elements;
A plurality of columnar crystals that convert radiation into light, and a scintillator layer disposed so as to cover the entire area of the pixel array,
The scintillator layer includes a first portion and a second portion located between the first portion and the sensor panel;
Each of the plurality of columnar crystals extends in a first direction in the first portion, and extends in a second direction different from the first direction in the second portion. Radiation detection device.   The radiation detection apparatus according to claim 1, wherein gaps between the plurality of columnar crystals overlap at least one of the plurality of columnar crystals in a plan view of the sensor panel.   The radiation detection apparatus according to claim 1, wherein each of the first direction and the second direction is inclined with respect to a normal line of a surface of the sensor panel.   The radiation detection apparatus according to claim 3, wherein the first direction and the second direction are opposite to each other with respect to a normal line of a surface of the sensor panel.   The radiation detection apparatus according to claim 3, wherein the first direction and the second direction are on the same side with respect to a normal line of a surface of the sensor panel.   The angle formed by the first columnar portion included in the first portion of the columnar crystal and the second columnar portion included in the second portion of the columnar crystal in a plan view of the sensor panel is from 0 °. The radiation detection apparatus according to claim 3, wherein the radiation detection apparatus is larger and smaller than 180 °. The first direction is inclined with respect to the normal of the surface of the sensor panel;
The radiation detection apparatus according to claim 1, wherein the second direction is parallel to a normal line of a surface of the sensor panel. The first direction is parallel to the normal of the surface of the sensor panel;
The radiation detection apparatus according to claim 1, wherein the second direction is inclined with respect to a normal line of a surface of the sensor panel. The pitch of the plurality of photoelectric conversion elements is p_pix, and the thickness of the layer in which the columnar crystal is inclined with respect to the normal of the surface of the sensor panel is t_sc among the first part and the second part, When the average angle between the direction in which the plurality of columnar crystals included in the inclined layer extends and the normal line of the surface of the sensor panel is θ_sc,
p_pix ≧ t_sc × tan (θ_sc)
The radiation detection apparatus according to claim 1, wherein: When one width of the plurality of photoelectric conversion elements is w_pix,
p_pix−w_pix ≧ t_sc × tan (θ_sc)
The radiation detection apparatus according to claim 9, wherein: The thickness of the layer in which the columnar crystals of the first portion and the second portion are inclined with respect to the normal line of the surface of the sensor panel is t_sc, and the plurality of columnar crystals included in the inclined layer The average angle between the extending direction of the sensor panel and the normal of the surface of the sensor panel is θ_sc, the average interval between the plurality of columnar crystals in the inclined layer is p_sc, and the angle in the inclined layer is When the average column diameter of the plurality of columnar crystals is w_sc,
t_sc × sin (θ_sc)> p_sc−w_sc
The radiation detection apparatus according to claim 1, wherein: The sensor panel includes an insulating substrate,
The radiation detection apparatus according to claim 1, wherein the plurality of photoelectric conversion elements are formed of amorphous silicon on the insulating substrate. The sensor panel includes a semiconductor substrate,
The radiation detection apparatus according to claim 1, wherein the plurality of photoelectric conversion elements are formed by impurity regions in the semiconductor substrate. A radiation detection apparatus according to any one of claims 1 to 13,
A radiation detection system comprising: signal processing means for processing a signal obtained by the radiation detection apparatus. A method of forming a scintillator layer on a substrate using a vapor deposition device,
The vapor deposition apparatus includes:
A turntable rotatable about a first rotation axis;
A substrate holder that is rotatable about a second rotation shaft at a position different from the first rotation shaft, is attached to the turntable, and can hold the substrate;
A vapor deposition source,
The method
Holding the substrate with the substrate holder so that the substrate is inclined with respect to the second rotation axis;
Rotating the rotating plate and the substrate holder while supplying the scintillator material from the vapor deposition source;
And rotating the substrate holder without rotating the rotating disk while supplying the scintillator material from the vapor deposition source. A method of forming a scintillator layer on a substrate using a vapor deposition device,
The vapor deposition apparatus includes:
A turntable rotatable about a first rotation axis;
A substrate holder that is rotatable about a second rotation shaft at a position different from the first rotation shaft, is attached to the turntable, and can hold the substrate;
An inclination mechanism for changing an inclination state of the substrate with respect to the second rotation axis;
A vapor deposition source,
The method
Holding the substrate with the substrate holder;
A step of rotating the rotating disk and the substrate holder while supplying the material of the scintillator from the vapor deposition source,
A method of changing the tilt state of the substrate with respect to the second rotation axis during the rotating step. A method of manufacturing a radiation detection apparatus having a sensor panel and a scintillator layer,
The method according to claim 15 or 16, wherein the scintillator layer is formed.