JP2016149911A - Power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power conversion device which can further reduce inductance parasitic in a bus bar.SOLUTION: A power conversion device comprises a plurality of electronic components 2, a plurality of cooling pipes 3 and a bus bar 4. The electronic components 2 and the cooling pipes 3 are layered. Some electronic components 2 (reactor 2a and booster semiconductor module 2b) compose a booster circuit 11. Some other electronic components 2 (smoothing capacitor 2c and inverter semiconductor module 2d) compose an inverter circuit 12. The plurality of electronic components 2 (2a, 2b) which compose the booster circuit 11 are adjacent to each other across the cooling pipe 3 to form a booster component group 21. The plurality of electronic components 2 (2c, 2d) which compose the inverter circuit 12 are adjacent to each other across the cooling pipe 3 to form an inverter component group 22. The booster component group 21 and the inverter component group 22 are adjacent to each other across the cooling pipe 3.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a power conversion device in which a booster circuit and an inverter circuit are formed.

  As a power conversion device that performs power conversion between DC power and AC power, a plurality of electronic parts and a plurality of cooling pipes for cooling the electronic parts are provided, and the electronic parts and the cooling pipes are stacked and stacked. The thing which comprised the body is known (refer the following patent document 1).

  The electronic component includes a reactor, a boosting semiconductor module, a smoothing capacitor, and an inverter semiconductor module. The reactor and the boosting semiconductor module constitute a boosting circuit that boosts the voltage of the DC power supply. Further, the smoothing capacitor and the semiconductor module for inverter constitute an inverter circuit. The plurality of electronic components are electrically connected to each other by a bus bar.

JP 2010-16402 A

  However, the power converter may have a large inductance parasitic on the bus bar. That is, in the above power converter, the electronic components constituting the booster circuit or the electronic components constituting the inverter circuit may be separated from each other, and the length of the bus bar connecting these electronic components becomes long. There is a case. Therefore, a large inductance may be parasitic on the bus bar. Therefore, it is conceivable that a large surge occurs due to this inductance when the inverter semiconductor module is switched.

  The present invention has been made in view of such a background, and an object of the present invention is to provide a power converter that can further reduce the inductance parasitic on the bus bar.

One embodiment of the present invention includes a plurality of electronic components;
A plurality of cooling pipes for cooling the electronic component;
A bus bar for electrically connecting the electronic components to each other;
The electronic component and the cooling pipe are laminated to form a laminate.
The plurality of electronic components include a reactor, a step-up semiconductor module containing a semiconductor element and connected to the reactor, a smoothing capacitor, and an inverter semiconductor module containing a semiconductor element and connected to the smoothing capacitor.
The reactor and the boosting semiconductor module constitute a boosting circuit that boosts the voltage of a DC power supply, and the smoothing capacitor and the inverter semiconductor module constitute an inverter circuit,
The plurality of electronic components constituting the booster circuit are adjacent to each other via the cooling pipe to form a boosting component group, and the plurality of electronic parts constituting the inverter circuit include the cooling pipe. Are adjacent to each other to form a group of inverter parts,
The boosting component group and the inverter component group are adjacent to each other through the cooling pipe.

  In the above power conversion device, a plurality of electronic components constituting the booster circuit are arranged adjacent to each other via a cooling pipe to form a booster component group. Therefore, a plurality of electronic components constituting the booster circuit can be arranged at positions close to each other, and the bus bar connecting them can be shortened. Therefore, the inductance parasitic on the bus bar can be reduced.

  Similarly, in the above power converter, a plurality of electronic components constituting the inverter circuit are arranged adjacent to each other via a cooling pipe to form an inverter component group. Therefore, a plurality of electronic parts constituting the inverter circuit can be arranged at positions close to each other, and the bus bar connecting them can be shortened. Therefore, the inductance parasitic on the bus bar can be reduced.

  In the power converter, the boosting component group and the inverter component group are arranged at positions adjacent to each other via a cooling pipe. Therefore, a portion of the bus bar that connects the boosting component group and the inverter component group can be shortened, and the parasitic inductance at this portion can be reduced.

  As described above, in the power converter, the inductance parasitic on the bus bar can be reduced. Therefore, it is possible to suppress a large surge from occurring when the inverter semiconductor module is switched.

  As described above, according to the present invention, it is possible to provide a power converter that can further reduce the inductance parasitic on the bus bar.

It is sectional drawing of the power converter device in Example 1, Comprising: II sectional drawing of FIG. II-II sectional drawing of FIG. The circuit diagram of the power converter device in Example 1. FIG. Sectional drawing of the power converter device in Example 2. FIG. Sectional drawing of the power converter device in Example 3. FIG. Sectional drawing of the power converter device in Example 4. FIG. Sectional drawing of the power converter device in Example 5. FIG. The circuit diagram of the power converter device in Example 5. FIG. Sectional drawing of the power converter device in Example 6. FIG. Sectional drawing of the power converter device in a comparative example.

  The power conversion device can be a vehicle-mounted power conversion device to be mounted on an electric vehicle, a hybrid vehicle, or the like.

Example 1
The Example which concerns on the said power converter device is described using FIGS. 1-3. As shown in FIGS. 1 and 2, the power conversion device 1 of this example includes a plurality of electronic components 2 (2a, 2b, 2c, 2d), a plurality of cooling pipes 3 for cooling the electronic components 2, and an electronic component And bus bars 4 (4p, 4n, 4u, 4i) for electrically connecting the two to each other. The electronic component 2 and the cooling pipe 3 are laminated to form a laminated body 10.

  The electronic component 2 includes a reactor 2a, a boosting semiconductor module 2b, a smoothing capacitor 2c, and an inverter semiconductor module 2d. Both the step-up semiconductor module 2b and the inverter semiconductor module 2d contain a semiconductor element 23 (see FIG. 3). The step-up semiconductor module 2b is connected to the reactor 2a. The inverter semiconductor module 2d is connected to the smoothing capacitor 2c.

  Reactor 2a and boosting semiconductor module 2b constitute boosting circuit 11 that boosts the voltage of DC power supply 8 (see FIG. 3). The smoothing capacitor 2 c and the inverter semiconductor module 2 d constitute an inverter circuit 12.

The plurality of electronic components 2 (2a, 2b) constituting the booster circuit 11 are adjacent to each other via the cooling pipe 3 to form a booster component group 21. The plurality of electronic components 2 (2c, 2d) constituting the inverter circuit 12 are adjacent to each other through the cooling pipe 3 to form an inverter component group 22.
The boosting component group 21 and the inverter component group 22 are adjacent to each other via the cooling pipe 3.

  The power conversion device 1 of this example is a vehicle-mounted power conversion device to be mounted on a vehicle such as an electric vehicle or a hybrid vehicle.

  The power conversion device 1 of this example includes a filter capacitor 2e as the electronic component 2 constituting the booster circuit 11, in addition to the reactor 2a and the boosting semiconductor module 2b. The filter capacitor 2e is provided to remove noise current contained in the DC current I supplied from the DC power supply 8 (see FIG. 3). The filter capacitor 2e is included in the boosting component group 21.

  As shown in FIG. 3, the power conversion device 1 of this example includes a first inverter circuit 121 and a second inverter circuit 122. The first inverter circuit 121 and the second inverter circuit 122 are connected to different three-phase AC motors 81 (81a, 81b), respectively. In this example, the booster circuit 11 is used to boost the voltage of the DC power supply 8, and the inverter circuit 12 is used to convert the boosted DC power into AC power. Thus, the three-phase AC motors 81a and 81b are driven to drive the vehicle.

  As shown in FIG. 2, the inverter semiconductor module 2 d includes a main body 24 containing a semiconductor element 23 (IGBT element: see FIG. 3), a power terminal 25 protruding from the main body 24, and a control terminal 26. . The power terminal 25 includes a positive terminal 25p and a negative terminal 25n to which a direct voltage is applied, and an AC terminal 25c connected to the three-phase AC motor 81. A positive electrode bus bar 4p is connected to the positive electrode terminal 25p. The negative electrode bus bar 4n is connected to the negative electrode terminal 25n.

The control terminal 26 is connected to the control circuit board 19. The control circuit board 19 is used to control the switching operation of the semiconductor modules 2b and 2d.
The boosting semiconductor module 2b has the same structure as the inverter semiconductor module 2d.

  As shown in FIG. 1, the power conversion device 1 of this example includes, as the bus bar 4, a boosting bus bar 4 u and an input bus bar 4 i in addition to the positive bus bar 4 p and the negative bus bar 4 n. The input bus bar 4i is connected to the positive terminal 201 of the filter capacitor 2e and the input terminal 203 of the reactor 2a. The boosting bus bar 4u is connected to the output terminal 204 of the reactor 2a and the AC terminal 25c of the boosting semiconductor module 2b.

  The positive bus bar 4p is connected to the positive terminals 25p of all the semiconductor modules 2b and 2d and the positive terminal 205 of the smoothing capacitor 2c. The negative electrode bus bar 4n is connected to the negative terminals 25n of all the semiconductor modules 2b and 2d, the negative terminal 206 of the smoothing capacitor 2c, and the negative terminal 202 of the filter capacitor 2e. The end portion 41 of the positive electrode bus bar 4p and the end portion 42 of the negative electrode bus bar 4n protrude outside the case 13. These end portions 41 and 42 are connected to the DC power supply 8 (see FIG. 3).

  As shown in FIG. 1, two cooling pipes 3 adjacent in the stacking direction (X direction) of the stacked body 10 are connected by a pair of connecting pipes 17. The connecting pipe 17 is provided at both ends of the cooling pipe 3 in the width direction (Y direction) orthogonal to both the protruding direction (Z direction) of the power terminal 25 and the X direction.

  Further, among the plurality of cooling pipes 3, an inlet pipe 14 for introducing the refrigerant 16 and an outlet pipe 15 for leading the refrigerant 16 are connected to the end cooling pipe 3 a located at one end in the X direction. doing. When the refrigerant 16 is introduced from the introduction pipe 14, the refrigerant 16 flows through all the cooling pipes 3 through the connecting pipe 17 and is led out from the outlet pipe 15. Thereby, each electronic component 2 (2a-2e) is cooled.

  In addition, as shown in FIG. 1, a pressure member 18 (plate spring) is disposed between the first wall 131 of the case 13 and the laminated body 10. Using this pressing member 18, the laminate 10 is pressed toward the second wall 132 of the case 13. Thereby, while ensuring the contact pressure between the cooling pipe 3 and the electronic component 2, the laminated body 10 is being fixed in the case 13. FIG.

  In this example, as described above, the boosting component group 21 and the inverter component group 22 are arranged at positions adjacent to each other via the cooling pipe 3. The electronic components 2 (2a, 2b, 2e) constituting the boosting component group 21 are arranged in order of the boosting semiconductor module 2b, the reactor 2a, and the filter capacitor 2e from the side closer to the inverter component group 22.

  The effect of this example will be described. As shown in FIG. 1, in the power conversion device 1 of this example, a plurality of electronic components 2 (2a, 2b, 2e) constituting the booster circuit 11 are arranged adjacent to each other via the cooling pipe 3, A boosting component group 21 is formed. Therefore, the reactor 2a and the boosting semiconductor module 2b, which are the electronic components 2 constituting the booster circuit 11, can be arranged at positions close to each other, and the bus bar 4 (boost busbar 4u) connecting them can be shortened. Therefore, it is possible to reduce the inductance parasitic on the boosting bus bar 4u.

In other words, as shown in FIG. 10, if the plurality of electronic components 92 (92a, 92b, 92e) constituting the booster circuit 911 are not arranged adjacent to each other via the cooling pipe 93, the reactor 92a and The step-up semiconductor module 92b is separated. Therefore, the boosting bus bar 94u connecting them becomes long. For example, in the configuration of FIG. 10, the boosting bus bar 94u is long because it needs to straddle the inverter semiconductor module 92d and the smoothing capacitor 92c. Therefore, a large inductance tends to be parasitic on the boosting bus bar 94u.
On the other hand, as shown in FIG. 1, a plurality of electronic components 2 (2a, 2b, 2e) constituting the booster circuit 11 are arranged so as to be adjacent to each other via the cooling pipe 3, as in this example. For example, the step-up semiconductor module 2b and the reactor 2a can be brought close to each other, and the step-up bus bar 4u can be shortened. Therefore, it is possible to reduce the inductance parasitic on the boosting bus bar 4u.

  In this example, the plurality of electronic components 2 (2c, 2d) constituting the inverter circuit 11 are arranged so as to be adjacent to each other via the cooling pipe 3, thereby forming the inverter component group 22. Therefore, the plurality of electronic components 2 (2c, 2d) constituting the inverter circuit 12 can be arranged at positions close to each other, and the parasitic inductance on the bus bar 4 (4p, 4n) can be reduced.

That is, as shown in FIG. 10, if a plurality of electronic components 92 (92c, 92d) constituting the inverter circuit 912 are not arranged adjacent to each other via the cooling pipe 93, these electronic components 92 are arranged. (92c, 92d) are arranged at positions far from each other. For example, in the configuration of FIG. 10, since the reactor 92a is disposed between the smoothing capacitor 92c and the inverter semiconductor module 92d, the smoothing capacitor 92c and the inverter semiconductor module 92d are separated. Therefore, the part which connects the smoothing capacitor 92c and the semiconductor module 92d for inverters among the positive electrode bus bar 94p and the negative electrode bus bar 94n will become long. Therefore, a large inductance is parasitic on this part.
On the other hand, as shown in FIG. 1, a plurality of electronic components 2 (inverter semiconductor module 2d, smoothing capacitor 2c) constituting the inverter circuit 12 are adjacent to each other via the cooling pipe 3, as in this example. By doing so, these electronic components 2 (2d, 2c) can be brought close to each other. Therefore, the site | part which connects these electronic components 2 (2d, 2c) among the positive electrode bus bar 4p and the negative electrode bus bar 4n can be shortened. Therefore, a large inductance is less likely to be parasitic on this part.

  As shown in FIG. 1, in this example, the boosting component group 21 and the inverter component group 22 are arranged at positions adjacent to each other via the cooling pipe 3. Therefore, in the bus bar 4 (4p, 4n), the part connecting the boosting part group 21 and the inverter part group 22 can be shortened, and the parasitic inductance at this part can be reduced.

As described above, in this example, the inductance parasitic on the bus bar 4 can be reduced. Therefore, it is possible to suppress a large surge from occurring when the inverter semiconductor module 2d is switched.
Moreover, in this example, since the length of the bus bar 4 (4p, 4n, 4u, 4i) can be shortened, the usage-amount of the metal material which comprises the bus bar 4 can be reduced. Therefore, the manufacturing cost of the power converter device 1 can be reduced. Moreover, the power converter device 1 can be reduced in weight.

In addition, the power conversion device 1 of this example includes a filter capacitor 2 e as the electronic component 2 constituting the booster circuit 11. The filter capacitor 2e is included in the boosting component group 21. The electronic components 2 (2e, 2a, 2b) constituting the booster circuit 11 are adjacent to each other via the cooling pipe 3.
Therefore, the filter capacitor 2e and the reactor 2a can be brought close to each other. Therefore, the length of the input bus bar 4i connecting the filter capacitor 2e and the reactor 2a can be shortened, and the parasitic inductance of the input bus bar 4i can be reduced.

As shown in FIG. 10, if the plurality of electronic components 92 (92e, 92a, 92b) constituting the booster circuit 911 are not adjacent to each other via the cooling pipe 93, the input bus bar 94i may be long. . That is, in the configuration of FIG. 10, since the inverter semiconductor module 92d is interposed between the filter capacitor 94e and the reactor 92a, the input bus bar 94i needs to straddle the inverter semiconductor module 92d. Therefore, the input bus bar 94i becomes long, and a large inductance is likely to be parasitic.
On the other hand, as shown in FIG. 1, a plurality of electronic components 2 (2e, 2a, 2b) constituting the booster circuit 11 are configured to be adjacent to each other via a cooling pipe 93 as in this example. For example, the filter capacitor 2e and the reactor 2a can be brought close to each other. Therefore, the input bus bar 4i can be shortened, and a large inductance can be prevented from parasitic in the input bus bar 4i.

Further, in this example, the electronic components 2 (2a, 2b, 2e) constituting the boosting component group 21 are in order of the boosting semiconductor module 2b, the reactor 2a, and the filter capacitor 2e from the side closer to the inverter component group 22. It is arranged.
Therefore, the inductance parasitic on the bus bar 4 can be further reduced. That is, with the above configuration, the inverter component group 22 and the boosting semiconductor module 2b can be arranged adjacent to each other. Therefore, a portion of the positive bus bar 4p and the negative bus bar 4n that connects the inverter component group 22 and the boosting semiconductor module 2b can be shortened. Therefore, the inductance parasitic on this part can be reduced. Further, with the above configuration, the boosting semiconductor module 2b and the reactor 2a can be disposed adjacent to each other. Therefore, the boosting bus bar 4u connecting them can be shortened, and the inductance parasitic on the boosting bus bar 4u can be reduced. Furthermore, since the reactor 2a and the filter capacitor 2e can be arranged adjacent to each other with the above configuration, the input bus bar 4i connecting them can be shortened, and the parasitic inductance of the input bus bar 4i can be reduced.

  As described above, according to this example, it is possible to provide a power conversion device that can further reduce inductance parasitic on the bus bar.

(Example 2)
In the following embodiments, the same reference numerals used in the drawings among the reference numerals used in the drawings represent the same components as in the first embodiment unless otherwise specified.

  In this example, the arrangement position of the electronic components 2 (2a, 2b, 2e) constituting the boosting component group 21 is changed. As shown in FIG. 4, in this example, the electronic components 2 constituting the boosting component group 21 are arranged in order of the boosting semiconductor module 2b, the filter capacitor 2e, and the reactor 2a from the side closer to the inverter component group 22. is there.

Also in the case of the above configuration, the boosting semiconductor module 2b can be arranged in the vicinity of the inverter component group 22 as in the first embodiment. Therefore, in the positive electrode bus bar 4p and the negative electrode bus bar 4n, the part connecting the inverter component group 22 and the step-up semiconductor module 2b can be shortened, and the parasitic inductance in this part can be reduced.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

(Example 3)
In this example, the number of smoothing capacitors 2c is changed. In this example, as shown in FIG. 5, the number of smoothing capacitors 2c is one. The smoothing capacitor 2 c is arranged at the center of the inverter component group 22.

With the above configuration, the distance from each inverter semiconductor module 2d to the smoothing capacitor 2c can be made substantially uniform. Therefore, the inductance parasitic on the bus bars 4p and 4n connecting the inverter semiconductor module 2d and the smoothing capacitor 2c can be made substantially uniform for all the inverter semiconductor modules 2d. Further, with the above configuration, the number of smoothing capacitors 2c is one, so that the number of parts can be reduced as compared with the first embodiment. Therefore, the manufacturing cost of the power converter device 1 can be reduced. Moreover, the X direction length of the power converter device 1 can be shortened.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

Example 4
In this example, the arrangement position of the electronic components 2 (2a, 2b, 2e) constituting the boosting component group 21 is changed. As shown in FIG. 6, in this example, the electronic component 2 constituting the boosting component group 21 is arranged in the order of the filter capacitor 2e, the boosting semiconductor module 2b, and the reactor 2a from the side closer to the inverter component group 22. is there.

Also in the case of the above configuration, the step-up semiconductor module 2b and the reactor 2a can be brought close to each other as in the first embodiment. Therefore, the length of the boosting bus bar 4u connecting the boosting semiconductor module 2 and the reactor 2a can be shortened, and the parasitic inductance of the boosting bus bar 4u can be suppressed.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

(Example 5)
In this example, the number of inverter semiconductor modules 2d is changed. As shown in FIGS. 7 and 8, in this example, only three inverter semiconductor modules 2d are provided. The three inverter semiconductor modules 2d and the smoothing capacitor 2c constitute an inverter circuit 12. The inverter circuit 12 is connected to one three-phase AC motor 81.

In this example, as shown in FIG. 7, the inverter component group 22 is configured by a plurality of inverter semiconductor modules 2d and smoothing capacitors 2c, as in the first embodiment. The boosting semiconductor module 2b, the reactor 2a, and the filter capacitor 2e constitute a boosting component group 21. The electronic components 2 (2b, 2a, 2e) constituting the boosting component group 21 are arranged in order of the boosting semiconductor module 2b, the reactor 2a, and the filter capacitor 2e from the side closer to the inverter component group 22.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

(Example 6)
In this example, the arrangement position of the electronic components 2 (2a, 2b, 2e) constituting the boosting component group 21 is changed. As shown in FIG. 9, in this example, the electronic component 2 constituting the boosting component group 21 is arranged in the order of the reactor 2a, the boosting semiconductor module 2b, and the filter capacitor 2e from the side closer to the inverter component group 22. is there.

Also in the case of the above configuration, the step-up semiconductor module 2b and the reactor 2a can be arranged at positions close to each other as in the first embodiment. For this reason, the length of the boosting bus bar 4u connecting the boosting semiconductor module 2 and the reactor 2a can be shortened, and the parasitic inductance of the boosting bus bar 4u can be suppressed.
In addition, the configuration and operational effects similar to those of the first embodiment are provided.

DESCRIPTION OF SYMBOLS 1 Power converter 10 Laminate body 11 Booster circuit 12 Inverter circuit 2 Electronic component 2a Reactor 2b Boosting semiconductor module 2c Smoothing capacitor 2d Inverter semiconductor module 21 Boosting component group 22 Inverter component group 3 Cooling pipe 4 Bus bar

Claims (3)

A plurality of electronic components (2);
A plurality of cooling pipes (3) for cooling the electronic component (2);
A bus bar (4) for electrically connecting the electronic components (2) to each other;
The electronic component (2) and the cooling pipe (3) are laminated to form a laminate (10),
The plurality of electronic components (2) include a reactor (2a), a semiconductor module for boosting (2b) that includes a semiconductor element (23) and is connected to the reactor (2a), a smoothing capacitor (2c), a semiconductor There is a semiconductor module for inverter (2b) having a built-in element (23) and connected to the smoothing capacitor (2c),
The reactor (2a) and the boosting semiconductor module (2b) constitute a boosting circuit (11) that boosts the voltage of the DC power supply (8). The smoothing capacitor (2c) and the inverter semiconductor module (2d) ) Constitutes the inverter circuit (12),
The plurality of electronic components (2) constituting the booster circuit (11) are adjacent to each other via the cooling pipe (3) to form a booster component group (21), and the inverter circuit (12 A plurality of the electronic components (2) constituting the above are adjacent to each other via the cooling pipe (3) to form an inverter component group (22).
The power converter (1), wherein the boosting component group (21) and the inverter component group (22) are adjacent to each other via the cooling pipe (3).   The electronic component (2) constituting the booster circuit (11) includes a filter capacitor (2e) for removing noise current contained in the direct current (I) supplied from the direct current power source (8), and the filter The power converter (1) according to claim 1, wherein the capacitor (2e) is included in the boosting component group (21).   The electronic component (2) constituting the boosting component group (21) includes the boosting semiconductor module (2b), the reactor (2a), and the filter capacitor from the side closer to the inverter component group (22). The power conversion device (1) according to claim 2, wherein the power conversion device (1) is arranged in the order of (2e).

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