JP2016149433A - Package for light emission element - Google Patents

Package for light emission element Download PDF

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JP2016149433A
JP2016149433A JP2015025189A JP2015025189A JP2016149433A JP 2016149433 A JP2016149433 A JP 2016149433A JP 2015025189 A JP2015025189 A JP 2015025189A JP 2015025189 A JP2015025189 A JP 2015025189A JP 2016149433 A JP2016149433 A JP 2016149433A
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light emitting
substrate
electrode layer
emitting element
element mounting
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悠史 三田
Yuji Mita
悠史 三田
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Nippon Carbide Industries Co Inc
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Nippon Carbide Industries Co Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Abstract

PROBLEM TO BE SOLVED: To provide a package for a light emission element that is inexpensive in manufacturing cost although it has overcurrent protection means.SOLUTION: A package 1 for a light emission element includes a ceramic substrate 2 having an element mount portion 4 on a principal surface 3 thereof, a light emission element 10 being mounted on the element mount portion 4, a pair of conductive layers for supplying power to the light emission element 10, the pair of conductive layers being a cathode electrode layer 5 and an anode electrode layer 6 which are provided to be separated from the principal surface 3 of the substrate 2, and a ceramic frame body 9 which is joined to the substrate 2 by a joint layer 8 provided on the principal surface 3 of the substrate 2 while surrounding the element mount portion 4. The joint layer 8 has a resistance value of not less than 1 MΩ to not more than 10 GΩ, and the gap 7 between the cathode electrode layer 5 and the anode electrode layer 6 is joined in an area sandwiched between the substrate 2 and the frame body 9.SELECTED DRAWING: Figure 1

Description

本発明は、発光素子搭載用パッケージに関する。   The present invention relates to a light emitting element mounting package.

発光ダイオード等の発光素子をパッケージに搭載した発光装置は、電球や蛍光灯よりも省エネルギーの光源として、バックライトや照明器具に広く用いられている。そして、これら発光素子は逆耐圧が小さいという性質を有しているため、一部の発光素子搭載用パッケージには、静電気等の過電流が流れた際に発光素子が故障しないように過電流保護手段が備えられている。   A light-emitting device in which a light-emitting element such as a light-emitting diode is mounted in a package is widely used in backlights and lighting fixtures as a light-saving light source than a light bulb or a fluorescent lamp. And since these light emitting elements have the property of having a low reverse breakdown voltage, some light emitting element mounting packages have overcurrent protection so that the light emitting elements do not fail when an overcurrent such as static electricity flows. Means are provided.

過電流保護手段を備えた発光素子搭載用パッケージとして、発光素子に電力を供給するためのカソード電極とアノード電極とを、印刷抵抗により連結する技術が特許文献１に開示されている。そして、特許文献１の図１７には、環状の枠体と平板状の基板とで構成された凹状の開口部内に、印刷抵抗が設けられた発光素子搭載用パッケージが記載されている。   As a light emitting element mounting package provided with an overcurrent protection means, a technique for connecting a cathode electrode and an anode electrode for supplying power to a light emitting element by a printing resistor is disclosed in Patent Document 1. FIG. 17 of Patent Document 1 describes a light emitting element mounting package in which a printing resistor is provided in a concave opening formed by an annular frame and a flat substrate.

特開２０１１−０１４６９５号公報JP 2011-014695 A

このような発光素子搭載用パッケージでは、印刷抵抗は開口部内に設けられているため、印刷抵抗が発光素子の光を吸収・遮蔽してしまうことにより、光反射効率が低下する虞がある。そこで、印刷抵抗を基板と枠体との接合界面に設けることにより、パッケージに内蔵させて、光反射効率の低下を防ぐことが考えられる。   In such a light emitting element mounting package, since the printing resistance is provided in the opening, there is a possibility that the light reflection efficiency may be reduced because the printing resistance absorbs and shields the light of the light emitting element. Therefore, it is conceivable to provide a printing resistor at the bonding interface between the substrate and the frame so that the light reflection efficiency is prevented from being lowered by incorporating the printing resistor in the package.

しかし、このような場合、基板と枠体とを接合するために接合材が用いられるが、この接合材を構成する材料の成分が、印刷抵抗へ移行することにより、抵抗値が変化することがある、そのため、基板と枠体とを接合する工程の前後に、抵抗値を確認・調整する工程が別途必要となり、発光素子搭載用パッケージの製造コストが増大するという問題が生じる。   However, in such a case, a bonding material is used to bond the substrate and the frame, but the resistance value may change due to the component of the material constituting the bonding material shifting to the printing resistance. For this reason, before and after the step of bonding the substrate and the frame, a step of checking and adjusting the resistance value is required separately, which causes a problem that the manufacturing cost of the light emitting element mounting package increases.

そこで、本発明は、上記課題を解決するためになされたものであり、その目的は、過電流保護手段を備えながらも、製造コストが安価である発光素子搭載用パッケージを提供することにある。   Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a light-emitting element mounting package that is provided with overcurrent protection means and is inexpensive to manufacture.

上記課題を達成するための具体的手段は、以下のとおりである。
＜１＞発光素子を搭載する素子搭載部を主面に有するセラミック製の基板と、前記発光素子に電力を供給するための一対の導体層であって、前記基板の主面に離間して設けられるカソード電極層及びアノード電極層と、前記基板の主面上に設けられる接合層により、前記素子搭載部を囲んだ状態で前記基板と接合されるセラミック製の枠体と、を備える発光素子搭載用パッケージにおいて、前記接合層は、１ＭΩ以上１０ＧΩ以下の抵抗値を有すると共に、前記基板と前記枠体とで挟まれる領域にて、前記カソード電極層と前記アノード電極層との間隙を連結する発光素子搭載用パッケージ。 Specific means for achieving the above-described problems are as follows.
<1> A ceramic substrate having an element mounting portion on which a light emitting element is mounted on a main surface, and a pair of conductor layers for supplying power to the light emitting element, and provided separately from the main surface of the substrate. A light-emitting element mounting comprising: a cathode electrode layer and an anode electrode layer, and a ceramic frame bonded to the substrate in a state of surrounding the element mounting portion by a bonding layer provided on a main surface of the substrate In the package for use, the bonding layer has a resistance value of 1 MΩ to 10 GΩ, and emits light that connects a gap between the cathode electrode layer and the anode electrode layer in a region sandwiched between the substrate and the frame body. Device mounting package.

＜２＞前記接合層は、導電性粉末と非導電性ガラスとを含有する材料又は導電性ガラスを含有する材料から構成される＜１＞に記載の発光素子搭載用パッケージ。 <2> The package for mounting a light-emitting element according to <1>, wherein the bonding layer includes a material containing conductive powder and non-conductive glass or a material containing conductive glass.

＜３＞前記カソード電極層及びアノード電極層を前記発光素子搭載用パッケージの前記枠体側の正面から平面視した場合、前記間隙は、線幅が０．１ｍｍ以上０．３ｍｍ以下の線状である＜１＞又は＜２＞に記載の発光素子搭載用パッケージ。 <3> When the cathode electrode layer and the anode electrode layer are viewed in plan from the front side of the frame body side of the light emitting element mounting package, the gap has a linear shape with a line width of 0.1 mm or more and 0.3 mm or less. <1> or <2> The light emitting element mounting package.

本発明によれば、過電流保護手段を備えながらも、製造コストが安価である発光素子搭載用パッケージを提供することができる。   According to the present invention, it is possible to provide a light emitting element mounting package that is provided with overcurrent protection means and is inexpensive to manufacture.

本発明の一実施形態の発光素子搭載用パッケージの構成を示す図。The figure which shows the structure of the light emitting element mounting package of one Embodiment of this invention. 図１の発光素子搭載用パッケージにおける電極層を示す上面図。FIG. 2 is a top view showing an electrode layer in the light emitting element mounting package of FIG. 1. 図１の発光素子搭載用パッケージにおける接合層を示す上面図。FIG. 2 is a top view showing a bonding layer in the light emitting element mounting package of FIG. 1. 図1の発光素子搭載用パッケージの上面図。FIG. 2 is a top view of the light emitting element mounting package of FIG.

以下、本発明の具体的な実施形態について詳細に説明するが、本発明は、以下の実施形態に何ら限定されるものではなく、本発明の目的の範囲内において、適宜変更を加えて実施することができる。   Hereinafter, specific embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments, and may be implemented with appropriate modifications within the scope of the object of the present invention. be able to.

図１は、本発明の一実施形態に係る発光素子搭載用パッケージの構成を示す図である。また、図２は、図１の発光素子搭載用パッケージにおける電極層を示す上面図であり、理解の容易のため、接合層８、枠体９、発光素子１０、ボンティングワイヤ１１を省略する。また、図３は、図１の発光素子搭載用パッケージにおける接合層を示す上面図であり、理解の容易のため、枠体９、発光素子１０、ボンティングワイヤ１１を省略する。図４は、図１の発光素子搭載用パッケージの上面図である。
なお、発光素子１０を封止する封止樹脂をその他の構成として備えるが、図１乃至図４では理解の容易のため封止樹脂を省略する。 FIG. 1 is a diagram showing a configuration of a light emitting element mounting package according to an embodiment of the present invention. 2 is a top view showing an electrode layer in the light emitting element mounting package of FIG. 1, and the bonding layer 8, the frame 9, the light emitting element 10, and the bonding wire 11 are omitted for easy understanding. FIG. 3 is a top view showing a bonding layer in the light emitting element mounting package of FIG. 1, and the frame body 9, the light emitting element 10, and the bonding wire 11 are omitted for easy understanding. FIG. 4 is a top view of the light emitting element mounting package of FIG.
Note that a sealing resin for sealing the light emitting element 10 is provided as another configuration, but the sealing resin is omitted in FIGS. 1 to 4 for easy understanding.

＜発光素子搭載用パッケージ＞
本発明の発光素子搭載用パッケージ１は、発光素子１０を搭載する素子搭載部４を主面３に有するセラミック製の基板２と、発光素子１０に電力を供給するための一対の導体層であって、基板２の主面３に離間して設けられるカソード電極層５及びアノード電極層６と、基板２の主面３上に設けられる接合層８により、素子搭載部４を囲んだ状態で基板２と接合されるセラミック製の枠体９と、を備える。そして、接合層８は、１ＭΩ以上１０ＧΩ以下の抵抗値を有する共に、基板２と枠体９とで挟まれる領域にて、カソード電極層５とアノード電極層６との間隙７を連結する。 <Light emitting device mounting package>
The light emitting element mounting package 1 of the present invention includes a ceramic substrate 2 having an element mounting portion 4 on which a light emitting element 10 is mounted on a main surface 3 and a pair of conductor layers for supplying power to the light emitting element 10. The element mounting portion 4 is surrounded by the cathode electrode layer 5 and the anode electrode layer 6 provided apart from the main surface 3 of the substrate 2 and the bonding layer 8 provided on the main surface 3 of the substrate 2. 2 and a ceramic frame 9 to be joined to each other. The bonding layer 8 has a resistance value of 1 MΩ to 10 GΩ and connects the gap 7 between the cathode electrode layer 5 and the anode electrode layer 6 in a region sandwiched between the substrate 2 and the frame body 9.

本発明の発光素子搭載用パッケージの接合層は、１ＭΩ以上１０ＧΩ以下の抵抗値を有すると共に、カソード電極層とアノード電極層とを連結するため、基板と枠体とを接合する機能に加え、静電気等の過電流から発光素子を保護する機能を兼ね備える。そのため、従来の発光素子搭載用パッケージの製造方法のように、予め設けた印刷抵抗に別途設けた接合材からその構成成分が移行し、抵抗値が変化するという事態は生じ得ない。従って、従来と比べ、接合工程の前後に抵抗値を確認・調整する工程が不要となるため、発光素子搭載用パッケージの製造コストを低減することができる。
また、接合層とは別に印刷抵抗を形成する必要がないことから、製造工程数が少なくなるため、発光素子搭載用パッケージの製造コストを低減することができる。
従って、本発明によれば、過電流保護手段を備えながらも、製造コストが安価である発光素子搭載用パッケージを提供することができる。 The bonding layer of the light emitting element mounting package of the present invention has a resistance value of 1 MΩ to 10 GΩ, and connects the cathode electrode layer and the anode electrode layer. It also has a function of protecting the light emitting element from overcurrent such as. Therefore, unlike the conventional method for manufacturing a light-emitting element mounting package, there cannot be a situation in which the constituent component is shifted from a bonding material separately provided in a printing resistor provided in advance and the resistance value is changed. Therefore, as compared with the prior art, a process for confirming and adjusting the resistance value before and after the joining process is not necessary, and the manufacturing cost of the light emitting element mounting package can be reduced.
In addition, since it is not necessary to form a printing resistor separately from the bonding layer, the number of manufacturing steps is reduced, so that the manufacturing cost of the light emitting element mounting package can be reduced.
Therefore, according to the present invention, it is possible to provide a light emitting element mounting package that is provided with overcurrent protection means and that is inexpensive to manufacture.

また、本発明の発光素子搭載用パッケージでは、基板の主面と枠体の内側面とで囲まれる空間に過電流保護手段が設けられないため、光反射効率は低下しない。   Further, in the light emitting element mounting package of the present invention, since the overcurrent protection means is not provided in the space surrounded by the main surface of the substrate and the inner side surface of the frame, the light reflection efficiency does not decrease.

＜基板＞
基板２は、平板状のセラミック焼結体からなる部材である。そして、基板２の枠体９側の面である主面３における略中心には、発光素子１０が設けられる素子搭載部４を有する。この素子搭載部４は、発光素子１０を搭載することができる領域である限りにおいて特に制限が無く、その周りの領域と特に区別されない領域としても良く、発光素子１０が搭載し易いように立体的な形状としても良い。
そして、基板２の主面３のうち枠体９で囲まれる領域における少なくとも素子搭載部４以外の領域は、発光素子１０が発光する光を反射する反射面とされる。
また、基板２の四隅には、下記する接続導体を設けるための溝が設けられる。この溝は、基板２の厚み方向に延在しており、厚み方向に垂直な断面の形状が略扇形状とされる。 <Board>
The substrate 2 is a member made of a flat ceramic sintered body. Then, the element mounting portion 4 on which the light emitting element 10 is provided is provided at the approximate center of the main surface 3 that is the surface of the substrate 2 on the frame body 9 side. The element mounting portion 4 is not particularly limited as long as it is an area where the light emitting element 10 can be mounted, and may be an area that is not particularly distinguished from the surrounding area, and is three-dimensional so that the light emitting element 10 can be easily mounted. It is good also as a simple shape.
Then, at least a region other than the element mounting portion 4 in the region surrounded by the frame body 9 in the main surface 3 of the substrate 2 is a reflective surface that reflects light emitted from the light emitting element 10.
Further, grooves for providing connection conductors described below are provided at the four corners of the substrate 2. The groove extends in the thickness direction of the substrate 2 and has a substantially fan-shaped cross section perpendicular to the thickness direction.

基板２を構成するセラミック焼結体としては、アルミナを主成分とするセラミック焼結体や、窒化アルミニウムを主成分とするセラミック焼結体や、ムライトを主成分とするセラミック焼結体や、低温焼成の一種であるガラス−セラミック焼結体等を挙げることができ、主成分としてアルミナを含み、添加成分としてバリウム元素を含むセラミック焼結体が、光反射効率が優れる観点からより好ましい。   As the ceramic sintered body constituting the substrate 2, a ceramic sintered body mainly composed of alumina, a ceramic sintered body mainly composed of aluminum nitride, a ceramic sintered body mainly composed of mullite, A glass-ceramic sintered body which is a kind of firing can be mentioned, and a ceramic sintered body containing alumina as a main component and barium element as an additional component is more preferable from the viewpoint of excellent light reflection efficiency.

基板２の製造方法としては、セラミック原料及び必要に応じて含まれるその他の原料を含むスラリーを調製し、得られたスラリーをグリーンシート化し、得られたグリーンシートを焼成する方法（グリーンシート法）、原料粉体を金型に充填し、加圧して得られた成形体を焼成する方法（粉体成形法）等が挙げられる。   As a manufacturing method of the substrate 2, a slurry containing a ceramic raw material and other raw materials included as necessary is prepared, the obtained slurry is converted into a green sheet, and the obtained green sheet is fired (green sheet method) Examples thereof include a method (powder molding method) of filling a raw material powder into a mold and firing a compact obtained by pressurization.

＜カソード電極層、アノード電極層＞
カソード電極層５及びアノード電極層６は、発光素子１０に電力を供給するための一対の導体層であり、基板２の主面３に素子搭載部４を囲んだ状態で環状に設けられる。そして、カソード電極層５及びアノード電極層６は、基板２の側面及び底面に設けられる同極の接続導体層と電気的にそれぞれ接続される。 <Cathode electrode layer, anode electrode layer>
The cathode electrode layer 5 and the anode electrode layer 6 are a pair of conductor layers for supplying power to the light emitting element 10, and are provided in a ring shape in a state of surrounding the element mounting portion 4 on the main surface 3 of the substrate 2. The cathode electrode layer 5 and the anode electrode layer 6 are electrically connected to the same-polarity connection conductor layers provided on the side surface and the bottom surface of the substrate 2, respectively.

カソード電極層５及びアノード電極層６の電極パターン形状は、基板２の図上下方向の中心線を対称軸とする線対称であり、上記接続導体層が設けられる基板２の主面３の角部から中心部に向って延在する。
また、カソード電極層５及びアノード電極層６のそれぞれは、基板２の主面３と枠体９の内側面とで囲まれる空間内に露出する部分を有しており、この露出部分にて、発光素子１０の端子とボンディングワイヤ１１により電気的に接続される。 The electrode pattern shapes of the cathode electrode layer 5 and the anode electrode layer 6 are axisymmetric with respect to the center line of the substrate 2 in the vertical direction in the figure, and the corners of the main surface 3 of the substrate 2 on which the connection conductor layer is provided. It extends from the center towards the center.
In addition, each of the cathode electrode layer 5 and the anode electrode layer 6 has a portion exposed in a space surrounded by the main surface 3 of the substrate 2 and the inner side surface of the frame body 9. The terminal of the light emitting element 10 is electrically connected by the bonding wire 11.

図２及び図３に示すように、基板２と枠体９とで挟まれる領域にて、カソード電極層５とアノード電極層６とは、間隙７を２箇所有する。   As shown in FIGS. 2 and 3, the cathode electrode layer 5 and the anode electrode layer 6 have two gaps 7 in a region sandwiched between the substrate 2 and the frame body 9.

本発明の発光素子搭載用パッケージ１では、間隙７の形状は、発光素子搭載用パッケージの枠体９側の正面から平面視した場合、線幅Ａが０．１ｍｍ以上０．３ｍｍ以下の線状であることが好ましい。線幅Ａが０．１ｍｍ未満であると、カソード電極層５及びアノード電極層６の形成時にそれぞれの電極層が直接接続されることにより短絡する場合があり、０．３ｍｍ超であると、間隙７から発光素子１０の光が漏れて、光反射効率が低下する場合がある。   In the light emitting element mounting package 1 of the present invention, the gap 7 has a linear shape with a line width A of 0.1 mm or more and 0.3 mm or less when viewed from the front of the light emitting element mounting package on the frame 9 side. It is preferable that When the line width A is less than 0.1 mm, the respective electrode layers may be directly connected when the cathode electrode layer 5 and the anode electrode layer 6 are formed. In some cases, light from the light-emitting element 10 leaks from the light 7 and the light reflection efficiency decreases.

カソード電極層５及びアノード電極層６を構成する導体としては、例えば、タングステン、モリブデン、銅、銀、銀-白金等の金属を挙げることができる。また、電極層の酸化腐食を防止するために、その露出する表面にニッケルや金等の耐食性に優れる金属を被着させることもできる。   Examples of the conductor constituting the cathode electrode layer 5 and the anode electrode layer 6 include metals such as tungsten, molybdenum, copper, silver, and silver-platinum. Further, in order to prevent oxidative corrosion of the electrode layer, a metal having excellent corrosion resistance such as nickel or gold can be deposited on the exposed surface.

カソード電極層５及びアノード電極層６の形成方法としては、スクリーン印刷方法、メッキ方法、スパッタ方法、フォトリソ方法等が挙げられる。   Examples of the method for forming the cathode electrode layer 5 and the anode electrode layer 6 include a screen printing method, a plating method, a sputtering method, and a photolithography method.

＜接合層＞
接合層８は、基板２と枠体９とを接合するための部材であって、基板２の主面３上及び電極層５，６上に素子搭載部４を囲うように環状に設けられる。接合層８は、枠体９の内側及び外側にはみ出ないように、基板２と枠体９とで挟まれる領域に設けられる。そして、接合層８は、１ＭΩ以上１０ＧΩ以下の抵抗値を有し、かつ間隙７に充填されて、カソード電極層５とアノード電極層６とを連結する。
抵抗値が１ＭΩ未満であると、カソード電極層５とアノード電極層６とが短絡してしまい、１０ＧΩ超であると、過電流保護手段として機能しなくなる。
なお、接合層８は、枠体９の内側及び外側よりはみ出ないことが好ましいが、場合によってははみ出ても良い。 <Junction layer>
The bonding layer 8 is a member for bonding the substrate 2 and the frame body 9 and is provided in an annular shape so as to surround the element mounting portion 4 on the main surface 3 and the electrode layers 5 and 6 of the substrate 2. The bonding layer 8 is provided in a region sandwiched between the substrate 2 and the frame body 9 so as not to protrude inside and outside the frame body 9. The bonding layer 8 has a resistance value of 1 MΩ or more and 10 GΩ or less, and is filled in the gap 7 to connect the cathode electrode layer 5 and the anode electrode layer 6.
When the resistance value is less than 1 MΩ, the cathode electrode layer 5 and the anode electrode layer 6 are short-circuited. When the resistance value exceeds 10 GΩ, the cathode does not function as overcurrent protection means.
In addition, it is preferable that the joining layer 8 does not protrude from the inner side and the outer side of the frame body 9, but may be protruded depending on circumstances.

接合層８を構成する材料としては、導電性粉末と非導電性バインダーとを含む接合材又は導電性バインダーを含む接合材を挙げることができる。   Examples of the material constituting the bonding layer 8 include a bonding material containing a conductive powder and a non-conductive binder or a bonding material containing a conductive binder.

導電性粉末としては、ルテニウム、錫、アンチモン、亜鉛、銀、パラジウム、白金、金、ニッケル、鉄、クロム、銅、モリブデン、タングステンの単体、化合物、あるいは合金の中から選んだ１種以上を挙げることができ、熱的安定性の観点から酸化ルテニウムがより好ましい。
非導電性バインダーとしては、非導電性ガラスや非導電性熱硬化性樹脂等が挙げることができ、セラミック製の基板と枠体とを強固に接合させる観点から、非導電性ガラスがより好ましい。なお、非導電性ガラスとしては、鉛系、ビスマス系、亜鉛系のガラス等を挙げることができ、環境及び製造コストの観点から無鉛であると共に融点が低い、ビスマス系、亜鉛系がより好ましい。
導電性バインダーとしては、導電性熱硬化性樹脂や導電性ガラス等が挙げることができ、セラミック製の基板と枠体とを強固に接合させる観点から、導電性ガラスがより好ましい。なお、導電性ガラスとしては、遷移金属系ガラス、カルコゲナイト系ガラス等を挙げることができ、酸化バナジウムを主成分としたガラス（Ｖ２Ｏ５−ＢａＯ−ＺｎＯ系、Ｖ２Ｏ５−Ｆｅ２Ｏ３−ＢａＯ系）がより好ましい。 Examples of the conductive powder include one or more selected from ruthenium, tin, antimony, zinc, silver, palladium, platinum, gold, nickel, iron, chromium, copper, molybdenum, tungsten, a compound, or an alloy. From the viewpoint of thermal stability, ruthenium oxide is more preferable.
Examples of the non-conductive binder include non-conductive glass and non-conductive thermosetting resin, and non-conductive glass is more preferable from the viewpoint of firmly bonding the ceramic substrate and the frame. Examples of the non-conductive glass include lead-based, bismuth-based, and zinc-based glasses, and bismuth-based and zinc-based materials that are lead-free and have a low melting point are more preferable from the viewpoint of environment and manufacturing cost.
Examples of the conductive binder include conductive thermosetting resins and conductive glass, and conductive glass is more preferable from the viewpoint of firmly bonding the ceramic substrate and the frame. As the conductive glass, transition metal-based glass, may be mentioned chalcogenide-based glass, glass mainly composed of vanadium oxide (V 2 O 5 -BaO-ZnO-based, V 2 O 5 -Fe 2 O 3- BaO system) is more preferable.

従って、接合層８を構成する材料としては、セラミック製の基板と枠体とを強固に接合させる観点から、導電性粉末と非導電性ガラスとを含有する材料又は導電性ガラスを含有する材料がより好ましい。なお、導電性ガラスを含有する材料には、必要に応じて、導電性粉末や非導電性バインダーを含有してもよい。   Therefore, as a material constituting the bonding layer 8, from the viewpoint of firmly bonding the ceramic substrate and the frame, a material containing conductive powder and non-conductive glass or a material containing conductive glass is used. More preferred. In addition, you may contain a conductive powder and a nonelectroconductive binder in the material containing conductive glass as needed.

接合層の形成方法としては、導電性ペーストをスクリーン印刷等で基板上又は／及び枠体上に塗布し、枠体と基体とを積層して、焼成、熱処理又光照射等の硬化処理をする方法が挙げられる。   As a method for forming the bonding layer, a conductive paste is applied on the substrate or / and the frame body by screen printing or the like, the frame body and the substrate are laminated, and a curing process such as baking, heat treatment or light irradiation is performed. A method is mentioned.

＜枠体＞
枠体９は、基板２の主面３上において、素子搭載部４を取り囲むように設けられる環状のセラミック焼結体からなる部材である。
また、枠体９には、厚み方向に天面及び底面形状が円形である貫通孔が形成される。枠体９は、基板２上に形成されるため、基板２としてみると、枠体９は、基板２と反対側が開口する。また、枠体９の内側面は、発光素子搭載用パッケージの外側に向かって広がるように傾斜することで、発光素子１０が発光する光を反射する反射面とされる。 <Frame body>
The frame body 9 is a member made of an annular ceramic sintered body provided on the main surface 3 of the substrate 2 so as to surround the element mounting portion 4.
The frame body 9 is formed with through holes whose top and bottom shapes are circular in the thickness direction. Since the frame body 9 is formed on the substrate 2, when viewed as the substrate 2, the frame body 9 is opened on the side opposite to the substrate 2. Further, the inner surface of the frame body 9 is inclined so as to spread toward the outer side of the light emitting element mounting package, thereby forming a reflecting surface that reflects light emitted from the light emitting element 10.

枠体９を構成するセラミック焼結体としては、アルミナを主成分とするセラミック焼結体や、窒化アルミニウムを主成分とするセラミック焼結体や、ムライトを主成分とするセラミック焼結体や、低温焼成の一種であるガラス−セラミック焼結体等を挙げることができ、主成分としてアルミナを含み、添加成分としてバリウム元素を含むセラミック焼結体が、光の反射効率が優れる観点からより好ましい。   As the ceramic sintered body constituting the frame body 9, a ceramic sintered body mainly composed of alumina, a ceramic sintered body mainly composed of aluminum nitride, a ceramic sintered body mainly composed of mullite, A glass-ceramic sintered body which is a kind of low-temperature firing can be mentioned, and a ceramic sintered body containing alumina as a main component and barium element as an additive component is more preferable from the viewpoint of excellent light reflection efficiency.

枠体９の形成方法としては、セラミック原料及び必要に応じて含まれるその他の原料を含むスラリーを調製し、得られたスラリーをグリーンシート化し、得られたグリーンシートを打ち抜いて貫通孔を形成した後に焼成する方法（グリーンシート法）、原料粉体を金型に充填し、加圧して得られた成形体を焼成する方法（粉体成形法）等が挙げられる。   As a method for forming the frame body 9, a slurry containing a ceramic raw material and other raw materials included as needed was prepared, the obtained slurry was made into a green sheet, and the obtained green sheet was punched to form a through hole. Examples thereof include a method of firing later (green sheet method), a method of filling a raw material powder in a mold, and firing a molded body obtained by pressurization (powder molding method).

＜発光装置＞
本発明の発光素子搭載用パッケージを用いた発光装置について、図１を用いて説明する。図１に記載の発光装置は、素子搭載部４上に図示せぬ接着剤により固定された発光素子１０と、発光素子１０の端子とカソード電極層５及びアノード電極層６とを電気的に接続するボンディングワイヤ１１と、基板２と枠体９とで囲まれる空間内に充填される図示せぬ封止樹脂とからなる。 <Light emitting device>
A light-emitting device using the light-emitting element mounting package of the present invention will be described with reference to FIG. The light emitting device shown in FIG. 1 electrically connects the light emitting element 10 fixed on the element mounting portion 4 with an adhesive (not shown), the terminal of the light emitting element 10, the cathode electrode layer 5, and the anode electrode layer 6. And a sealing resin (not shown) filled in a space surrounded by the substrate 2 and the frame body 9.

発光素子１０は、特に図示しないが、半導体の層や複数の電極を有してなり、単一或いは複数の波長帯域の光を出射することができるように構成され、信号入力用の端子とグランド接続用の端子とが設けられる。この発光素子１０は、素子搭載部４に設けられ、図示しない接着剤により固定される。そして、カソード電極層５と発光素子１０の一方の端子とがボンディングワイヤ１１により電気的に接続され、アノード電極層６と発光素子１０の他方の端子とがボンディングワイヤ１１により電気的に接続される。   Although not particularly shown, the light-emitting element 10 includes a semiconductor layer and a plurality of electrodes, and is configured to emit light of a single or a plurality of wavelength bands. A signal input terminal and a ground And a terminal for connection. The light emitting element 10 is provided in the element mounting portion 4 and is fixed by an adhesive (not shown). The cathode electrode layer 5 and one terminal of the light emitting element 10 are electrically connected by the bonding wire 11, and the anode electrode layer 6 and the other terminal of the light emitting element 10 are electrically connected by the bonding wire 11. .

さらに発光素子１０の各端子とカソード電極層５及びアノード電極層６とがボンディングワイヤ１１を介して電気的に接続された状態で、枠体９で囲まれる空間内には、少なくとも発光素子１０及びボンディングワイヤ１１を覆うように図示せぬ封止樹脂が充填される。この封止樹脂は、発光素子１０が発光する光を透過可能な光透過性の樹脂である。封止樹脂に用いる樹脂としては、発光素子１０が発光する光を透過する樹脂である限りにおいて、特に限定されないが、エポキシ樹脂やシリコーン樹脂を挙げることができ、発光装置の耐久性を向上させる観点からシリコーン樹脂がより好ましい。また、封止樹脂には蛍光体が含有されても良く、このような蛍光体としては、発光素子から出射する光を受けて、他の波長の光を発光可能なものであれば良い。   Further, in a state where each terminal of the light emitting element 10 and the cathode electrode layer 5 and the anode electrode layer 6 are electrically connected via the bonding wire 11, at least the light emitting element 10 and the space surrounded by the frame body 9 are included. A sealing resin (not shown) is filled so as to cover the bonding wire 11. This sealing resin is a light-transmitting resin that can transmit light emitted from the light-emitting element 10. The resin used for the sealing resin is not particularly limited as long as it is a resin that transmits light emitted from the light-emitting element 10, and examples thereof include an epoxy resin and a silicone resin, and the viewpoint of improving the durability of the light-emitting device. To silicone resin is more preferable. In addition, the sealing resin may contain a phosphor, and such a phosphor may be any one that can receive light emitted from the light emitting element and emit light of other wavelengths.

このような発光装置は、基板２の底面や側面に形成された接続導体層が、外部の電気回路基板の端子に接続されて使用される。発光装置の使用状態においては、カソード電極層５、アノード電極層６に印加される電圧がボンディングワイヤ１１を介して、発光素子１０へ印加され、この電圧により発光素子１０が発光する。発光素子１０が発光する光は、封止樹脂を透過して直接発光装置の外部に出射したり、基板２の主面３のうち枠体内に露出する部分や枠体９の内側面で反射して、発光装置の外部に出射したりする。   Such a light emitting device is used by connecting a connection conductor layer formed on the bottom surface or side surface of the substrate 2 to a terminal of an external electric circuit substrate. In the usage state of the light emitting device, a voltage applied to the cathode electrode layer 5 and the anode electrode layer 6 is applied to the light emitting element 10 through the bonding wire 11, and the light emitting element 10 emits light by this voltage. The light emitted from the light emitting element 10 passes through the sealing resin and is directly emitted to the outside of the light emitting device, or is reflected from a portion of the main surface 3 of the substrate 2 exposed in the frame body or the inner surface of the frame body 9. Or emitted outside the light emitting device.

以下、本発明を実施例に基づき説明するが、本発明はこれらの実施例に限定されるものではない。   EXAMPLES Hereinafter, although this invention is demonstrated based on an Example, this invention is not limited to these Examples.

スルーホールが部分的に形成された分割溝が主面に縦横に形成された、厚さ０．６ｍｍの板状の多数個取りセラミック基板を用意した。なお、縦横の分割溝で囲まれる個片のセラミック基板の寸法は、縦７ｍｍ×横７ｍｍである。   A plate-shaped multi-cavity ceramic substrate having a thickness of 0.6 mm was prepared, in which divided grooves in which through-holes were partially formed were formed vertically and horizontally on the main surface. The size of the individual ceramic substrate surrounded by the vertical and horizontal dividing grooves is 7 mm long × 7 mm wide.

多数個取りセラミック基板の主面の所定位置に、銀ペーストを塗布することにより、厚さ１０μｍの配線パターンを得た。
次に、スルーホールの内周面に銀ペーストを塗布するために、多数個取りセラミック基板の底面側から銀ペーストを吸引した後、１５０℃の温度で１０分間乾燥した。そして、２時間かけて昇温し、８５０℃で１０分間保持し、１時間かけて降温することで焼成した。
その後、多数個取りセラミック基板の裏面の所定位置に銀ペーストを塗布し、厚さ１０μｍの配線パターンを得た後、１５０℃の温度で１０分間乾燥した。そして、２時間かけて昇温し、８５０℃で１０分間保持し、１時間かけて降温することで焼成した。
以上により、導体層を形成した。
その後、導体層上にＮｉメッキ層とＡｕメッキ層をこの順で形成した。 A silver paste was applied to a predetermined position on the main surface of the multi-cavity ceramic substrate to obtain a wiring pattern having a thickness of 10 μm.
Next, in order to apply the silver paste to the inner peripheral surface of the through hole, the silver paste was sucked from the bottom surface side of the ceramic substrate, and then dried at a temperature of 150 ° C. for 10 minutes. And it heated up over 2 hours, hold | maintained at 850 degreeC for 10 minutes, and baked by temperature-falling over 1 hour.
Thereafter, a silver paste was applied to a predetermined position on the back surface of the multi-piece ceramic substrate to obtain a wiring pattern having a thickness of 10 μm, and then dried at a temperature of 150 ° C. for 10 minutes. And it heated up over 2 hours, hold | maintained at 850 degreeC for 10 minutes, and baked by temperature-falling over 1 hour.
Thus, a conductor layer was formed.
Thereafter, a Ni plating layer and an Au plating layer were formed in this order on the conductor layer.

次に、噴霧乾燥により得たセラミック粒状物を粉体成形し、成形体を１６００℃で焼成することで、環状の枠体を複数得た。
枠体は、厚さ１．２ｍｍ×縦６．７ｍｍ×横６．７ｍｍの外形を有し、高さ１．２ｍｍ×天面側の開口径５．２ｍｍ×底面側の開口径４．１ｍｍの貫通孔を有する。 Next, the ceramic granular material obtained by spray drying was powder-molded, and the compact was fired at 1600 ° C. to obtain a plurality of annular frames.
The frame body has a thickness of 1.2 mm × length of 6.7 mm × width of 6.7 mm, and has a height of 1.2 mm × top surface side opening diameter of 5.2 mm × bottom surface side opening diameter of 4.1 mm. It has a through hole.

多数個取りセラミック基板の主面上及び導体層上の所定位置に、酸化ルテニウム、ほう珪酸ガラス、樹脂バインダー、溶剤により構成されるガラスペーストを塗布し、厚み１０μｍのガラスペースト層を得た。   A glass paste composed of ruthenium oxide, borosilicate glass, a resin binder, and a solvent was applied to predetermined positions on the main surface and the conductor layer of the multi-cavity ceramic substrate to obtain a glass paste layer having a thickness of 10 μm.

ガラスペースト層が形成された多数個取りセラミック基板上に、複数の枠体を積層して仮接着した後、１５０℃で２０分間乾燥した。その後、２時間かけて昇温し、８００℃で１時間保持し、１時間かけて降温することで焼成し、接合層を形成した（多数個取りセラミック基板と枠体とを接合した）。
接合層の抵抗値は３０ＭΩであり、膜厚は約１０μｍである。 A plurality of frames were laminated and temporarily bonded onto a multi-cavity ceramic substrate on which a glass paste layer was formed, and then dried at 150 ° C. for 20 minutes. Then, it heated up over 2 hours, hold | maintained at 800 degreeC for 1 hour, it baked by cooling down over 1 hour, and formed the joining layer (joint | multilayered ceramic substrate and the frame were joined).
The bonding layer has a resistance value of 30 MΩ and a film thickness of about 10 μm.

最後に分割溝に沿って分割する事で、個片の発光素子搭載用パッケージを得た。   Finally, the light emitting element mounting package was obtained by dividing along the dividing grooves.

本実施例の構成により、接合層が、基板と枠体とを接合する機能に加え、静電気等の過電流から発光素子を保護する機能をも有することができたため、製造コストが安価な発光素子搭載用パッケージを得ることができた。   With the structure of this example, the bonding layer can have a function of protecting the light emitting element from an overcurrent such as static electricity in addition to the function of bonding the substrate and the frame, and thus the light emitting element with a low manufacturing cost. A mounting package was obtained.

１・・・発光素子搭載用パッケージ
２・・・基板
３・・・基板の主面
４・・・素子搭載部
５・・・カソード電極層
６・・・アノード電極層
７・・・間隙
８・・・接合層
９・・・枠体
１０・・・発光素子
１１・・・ボンディングワイヤ DESCRIPTION OF SYMBOLS 1 ... Light emitting element mounting package 2 ... Board | substrate 3 ... Main surface of a board | substrate 4 ... Element mounting part 5 ... Cathode electrode layer 6 ... Anode electrode layer 7 ... Gap 8. ..Junction layer 9 ... frame 10 ... light emitting element 11 ... bonding wire

Claims (3)

発光素子を搭載する素子搭載部を主面に有するセラミック製の基板と、
前記発光素子に電力を供給するための一対の導体層であって、前記基板の主面に離間して設けられるカソード電極層及びアノード電極層と、
前記基板の主面上に設けられる接合層により、前記素子搭載部を囲んだ状態で前記基板と接合されるセラミック製の枠体と、
を備える発光素子搭載用パッケージにおいて、
前記接合層は、１ＭΩ以上１０ＧΩ以下の抵抗値を有すると共に、前記基板と前記枠体とで挟まれる領域にて、前記カソード電極層と前記アノード電極層との間隙を連結する
発光素子搭載用パッケージ。 A ceramic substrate having an element mounting portion for mounting a light emitting element on the main surface;
A pair of conductor layers for supplying electric power to the light emitting element, the cathode electrode layer and the anode electrode layer provided separately from the main surface of the substrate;
A ceramic frame bonded to the substrate in a state of surrounding the element mounting portion by a bonding layer provided on the main surface of the substrate;
In a light emitting device mounting package comprising:
The bonding layer has a resistance value of 1 MΩ or more and 10 GΩ or less, and connects a gap between the cathode electrode layer and the anode electrode layer in a region sandwiched between the substrate and the frame body. . 前記接合層は、導電性粉末と非導電性ガラスとを含有する材料又は導電性ガラスを含有する材料から構成される
請求項１に記載の発光素子搭載用パッケージ。 The light emitting element mounting package according to claim 1, wherein the bonding layer is made of a material containing conductive powder and non-conductive glass or a material containing conductive glass. 前記カソード電極層及びアノード電極層を前記発光素子搭載用パッケージの前記枠体側の正面から平面視した場合、前記間隙は、線幅が０．１ｍｍ以上０．３ｍｍ以下の線状である
請求項１又は請求項２に記載の発光素子搭載用パッケージ。 The gap has a linear shape with a line width of 0.1 mm or more and 0.3 mm or less when the cathode electrode layer and the anode electrode layer are viewed in plan from the front of the light emitting element mounting package on the frame side. Or the package for light emitting element mounting of Claim 2.
JP2015025189A 2015-02-12 2015-02-12 Package for light emission element Pending JP2016149433A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021128950A (en) * 2020-02-10 2021-09-02 アオイ電子株式会社 Manufacturing method of light-emitting device, and light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021128950A (en) * 2020-02-10 2021-09-02 アオイ電子株式会社 Manufacturing method of light-emitting device, and light-emitting device
JP7402706B2 (en) 2020-02-10 2023-12-21 アオイ電子株式会社 Method for manufacturing a light emitting device, and light emitting device

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