JP2016131162A5 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- JP2016131162A5 JP2016131162A5 JP2016087137A JP2016087137A JP2016131162A5 JP 2016131162 A5 JP2016131162 A5 JP 2016131162A5 JP 2016087137 A JP2016087137 A JP 2016087137A JP 2016087137 A JP2016087137 A JP 2016087137A JP 2016131162 A5 JP2016131162 A5 JP 2016131162A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- polyimide layer
- fixed substrate
- semiconductor element
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims 13
- 238000004519 manufacturing process Methods 0.000 title claims 5
- 229920001721 Polyimide Polymers 0.000 claims 8
- 239000004642 Polyimide Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 230000001678 irradiating Effects 0.000 claims 4
Claims (4)
前記ポリイミド層上に半導体素子を形成し、Forming a semiconductor element on the polyimide layer;
前記半導体素子を形成後に、線状レーザー光を照射することにより、前記固定基板を分離することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: separating the fixed substrate by irradiating linear laser light after forming the semiconductor element.
前記ポリイミド層上に、ＴＦＴを有する半導体素子を形成し、A semiconductor element having a TFT is formed on the polyimide layer,
前記半導体素子を形成後に、線状レーザー光を照射することにより、前記固定基板を分離することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: separating the fixed substrate by irradiating linear laser light after forming the semiconductor element.
前記ポリイミド層上に半導体素子及びＥＬ素子を形成し、A semiconductor element and an EL element are formed on the polyimide layer,
前記半導体素子及び前記ＥＬ素子を形成後に、線状レーザー光を照射することにより、前記固定基板を分離することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: separating the fixed substrate by irradiating a linear laser beam after forming the semiconductor element and the EL element.
前記ポリイミド層上に、ＴＦＴを有する半導体素子及びＥＬ素子を形成し、A semiconductor element having a TFT and an EL element are formed on the polyimide layer,
前記半導体素子及び前記ＥＬ素子を形成後に、線状レーザー光を照射することにより、前記固定基板を分離することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, comprising: separating the fixed substrate by irradiating a linear laser beam after forming the semiconductor element and the EL element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016087137A JP6100950B2 (en) | 2016-04-25 | 2016-04-25 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016087137A JP6100950B2 (en) | 2016-04-25 | 2016-04-25 | Method for manufacturing semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015189151A Division JP6085015B2 (en) | 2015-09-28 | 2015-09-28 | Method for manufacturing display device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016131162A JP2016131162A (en) | 2016-07-21 |
| JP2016131162A5 true JP2016131162A5 (en) | 2016-11-17 |
| JP6100950B2 JP6100950B2 (en) | 2017-03-22 |
Family
ID=56415659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016087137A Expired - Lifetime JP6100950B2 (en) | 2016-04-25 | 2016-04-25 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6100950B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6395786B2 (en) * | 2016-10-03 | 2018-09-26 | 株式会社半導体エネルギー研究所 | Manufacturing method of electronic equipment |
| CN109524301A (en) * | 2018-11-20 | 2019-03-26 | 英诺激光科技股份有限公司 | A method of utilizing ultrafast laser accurate tune group on flexible substrates |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3809712B2 (en) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | Thin film device transfer method |
| JP4146526B2 (en) * | 1997-02-27 | 2008-09-10 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal display device |
| JP2000195669A (en) * | 1998-12-25 | 2000-07-14 | Casio Comput Co Ltd | Manufacture of luminous element |
-
2016
- 2016-04-25 JP JP2016087137A patent/JP6100950B2/en not_active Expired - Lifetime
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