JP2016126818A5

JP2016126818A5 - Semiconductor device

Info

Publication number: JP2016126818A5
Application number: JP2015250713A
Authority: JP
Filing date: 2015-12-23
Publication date: 2019-02-07
Anticipated expiration: 2035-12-23

Claims

Having a memory cell,
The memory cell includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, and a second capacitor.
A gate of the first transistor is electrically connected to a first wiring;
One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and the first capacitor;
The other of the source and the drain of the first transistor is electrically connected to a second wiring;
One of a source and a drain of the second transistor is electrically connected to the second wiring;
The other of the source and the drain of the second transistor is electrically connected to a third wiring;
A gate of the third transistor is electrically connected to a fourth wiring;
One of a source and a drain of the third transistor is electrically connected to the second capacitor;
The other of the source and the drain of the third transistor is electrically connected to the second wiring;
A gate of the fourth transistor is electrically connected to a fifth wiring;
The one is the fourth of the source and the drain of the transistor, the second wiring electrically connected,
The other of the source and the drain of the fourth transistor is a semiconductor device electrically connected to a sixth wiring.

In claim 1,
A function of supplying a first potential corresponding to a potential held at one of a source and a drain of the first transistor to the sixth wiring;
A semiconductor device having a function of supplying a second potential corresponding to a potential held at one of a source and a drain of the third transistor to the sixth wiring;

In claim 2,
The semiconductor device is configured to supply the second potential to the sixth wiring by distributing the charge accumulated in the second capacitor element to the first capacitor element.

In claim 3,
A semiconductor device in which the charge is distributed after a reset potential is supplied from the sixth wiring to one of a source and a drain of the first transistor.