JP2016121801A - Tube and method of supplying heat medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit a risk of breakage of a device connected to a tube through which a heat medium flows and reduce an electro static charge amount to the tube.SOLUTION: A tube 20 installed in a substrate treatment device to supply the insulated heat medium supplied from the outside of the substrate treatment device, to a heat exchange member for exchanging heat with a temperature controlled object in the substrate treatment device includes: a second tube 202 formed of a material having conductivity; a first tube 200 formed of a material having insulation property; and a relay member 201 for relaying between the conductive tube and the insulated tube.SELECTED DRAWING: Figure 2

Description

  Various aspects and embodiments of the present invention relate to a tube and a heating medium supply method.

  In a substrate processing apparatus or the like that processes a semiconductor substrate, when controlling the temperature of a member in the apparatus, for example, a heat exchange member is brought into contact with a member that is a target of temperature control, and a heat medium is circulated in the heat exchange member. As a result, heat exchange is performed between the heat control medium and the member to be temperature controlled via the heat exchange member. And the temperature of the member in a substrate processing apparatus is controllable by controlling the temperature of a heat medium with the temperature control apparatus provided outside the substrate processing apparatus. The heat exchange member and the temperature control device are connected by a tube, and the heat medium flows through the tube.

  For the heat medium, an insulating material is often used. Therefore, static electricity is charged on the inner wall of the tube due to friction when the heat medium flows through the tube. When the electrostatic voltage charged on the tube exceeds a certain value, discharge occurs and the inner wall of the tube is damaged. In order to avoid this, there is a case where the tube is formed of a material having a low resistance value having conductivity, and the tube is connected to the ground so that static electricity charged in the tube can be released. However, when the heat exchange member is set to a potential different from the ground potential, the heat exchange member and the temperature control device cannot be connected by a conductive tube having a low resistance value connected to the ground.

  Therefore, a conductive wire extending from one end of the tube to the other end along the direction in which the heat medium flows is disposed in the insulating tube, and one end of the wire is led out of the tube and connected to the ground. Technology is known. As a result, static electricity generated between the tube and the heat medium when the heat medium flows through the tube can be released to the outside through the wire.

JP 2003-168710 A

  By the way, when the static electricity generated between the tube and the heat medium is released to the outside by the wire arranged in the tube, the other end of the wire passes through the heat medium according to the flow of the heat medium in the tube. Will drift. Thereby, a load is intermittently applied to the wire, and the wire may be cut or disconnected. When the wire is cut or disconnected, the inside of the pump or the temperature control device that controls the flow of the heat medium may be damaged by the cut wire.

  Also, if the direction in which the heat medium flows through the tube and the direction from one end of the wire in the tube toward the other end are reversed, the wire enters the heat exchange member or temperature control device connected to the tube. . Thereby, the flow path in the heat exchange member may be blocked, or the inside of the pump or temperature control device that controls the flow of the heat medium may be damaged. For this reason, the direction in which the heat medium flows cannot be changed after the tube is attached.

  The tube according to one aspect of the present invention is provided in a substrate processing apparatus, and an insulating material supplied from the outside of the substrate processing apparatus to a heat exchange member that performs heat exchange with a temperature control object in the substrate processing apparatus. A tube for supplying a heat medium, the conductive tube formed of a conductive material, the insulating tube formed of an insulating material, and the relay between the conductive tube and the insulating tube A relay member.

  According to various aspects and embodiments of the present invention, it is possible to reduce the risk of damage to an apparatus connected to a tube through which a heat medium flows, and to reduce the amount of electrostatic charge on the tube.

FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus. FIG. 2 is a cross-sectional view illustrating an example of a tube in the first embodiment. FIG. 3 is a schematic diagram illustrating an example of a heat medium flow path in the first embodiment. FIG. 4 is a cross-sectional view illustrating an example of a tube in the second embodiment. FIG. 5 is a cross-sectional view illustrating an example of a tube in the third embodiment. FIG. 6 is a schematic diagram illustrating an example of a heat medium flow path in the fourth embodiment. FIG. 7 is a cross-sectional view illustrating an example of a tube in the fourth embodiment. FIG. 8 is a diagram illustrating an example of an experimental result of a temporal change in charge amount in the tube of the comparative example and the tube of Example 4. FIG. 9 is a cross-sectional view illustrating an example of a tube in the fifth embodiment.

  In one embodiment, the disclosed tube is provided in a substrate processing apparatus, and an insulating material supplied from the outside of the substrate processing apparatus to a heat exchange member that performs heat exchange with a temperature control object in the substrate processing apparatus. A tube that supplies a heat medium, and is a relay that relays between a conductive tube formed of a conductive material, an insulating tube formed of an insulating material, and the conductive tube and the insulating tube. A member.

  Also, in one embodiment of the disclosed tube, the conductive tube may be longer than the insulating tube.

  In one embodiment of the disclosed tube, one end of the conductive tube is electrically connected to the housing of the substrate processing apparatus, the other end of the conductive tube is connected to the relay member, and the insulating tube One end may be connected to the relay member, and the other end of the insulating tube may be connected to the heat exchange member.

  Further, in one embodiment of the disclosed tube, at least a part of the conductive tube is formed in a bellows shape, and at least an inner wall of the insulating tube is more than an inner wall of a portion of the conductive tube formed in a bellows shape. It may be smooth.

  In one embodiment of the disclosed tube, the conductive tube may be formed of a material containing at least one of stainless steel, aluminum, carbon steel, and copper.

  In one embodiment of the disclosed tube, the conductive tube includes an outer tube formed of an insulating material and a coating that is formed of a conductive material and covers the inner wall of the outer tube. May be.

  In one embodiment of the disclosed tube, the insulating tube may be formed of a material containing at least one of polytetrafluoroethylene (PTFE) and other fluorine-based resins (for example, PFE or FEP). .

  In one embodiment of the disclosed tube, the relay member may be formed of a material containing at least one of stainless steel, aluminum, carbon steel, and copper.

  In one embodiment, the disclosed heat medium supply method includes a conductive tube formed in a substrate processing apparatus and formed from a conductive material, and an insulating tube formed from an insulating material. Insulation supplied from the outside of the substrate processing apparatus to the heat exchange member that performs heat control target heat exchange in the substrate processing apparatus using a tube including a relay member that relays the conductive tube and the insulating tube Supply of heat medium.

  In addition, in one embodiment, the disclosed tube is provided in a substrate processing apparatus, and an insulation supplied from the outside of the substrate processing apparatus to a heat exchange member that exchanges heat with an object to be controlled in the substrate processing apparatus. A heat supply medium, and at least the inner wall is formed of a conductive material having a charge amount of 1 kV or less.

  In one embodiment, the disclosed tube may include an outer tube formed of an insulating material and a coating that is formed of a conductive material and covers the inner wall of the outer tube.

  In one embodiment of the disclosed tube, the conductive material may be a carbon-containing material.

  Further, in one embodiment of the disclosed tube, the resistance value per unit length of the conductive material may be a resistance value within a range of 3 kΩ / mm to 23 kΩ / mm.

  Moreover, in one embodiment of the disclosed tube, at least a part of the tube may be formed in a bellows shape.

  In one embodiment, the disclosed heat medium supply method is provided in a substrate processing apparatus, and at least an inner wall is formed by using a tube formed of a conductive material having a charge amount of 1 kV or less. An insulating heat medium supplied from the outside of the substrate processing apparatus is supplied to a heat exchange member that performs heat control target heat exchange in the apparatus.

  Hereinafter, embodiments of the disclosed tube and heat medium supply method will be described in detail based on the drawings. In addition, the invention disclosed by this embodiment is not limited. In addition, the embodiments can be appropriately combined within a range that does not contradict processing contents.

(Embodiment)
FIG. 1 is a schematic sectional view showing an example of the substrate processing apparatus 100. A substrate processing apparatus 100 shown in FIG. 1 includes a processing container 1 that is airtight and connected to ground. The processing container 1 is formed in a cylindrical shape, and is divided into an upper container 1a and a lower container 1b up and down. The upper container 1a and the lower container 1b are formed of a conductive material such as aluminum, and an anodic oxide film is formed on the surface, for example. In the lower container 1b, there is provided a mounting table 2 that supports a semiconductor wafer W, which is an object to be processed, substantially horizontally.

  The mounting table 2 has a base material 2a made of a conductive material such as aluminum, and functions as a lower electrode. The mounting table 2 is supported by a conductor support 4 provided on an insulating plate 3. A focus ring 5 made of, for example, single crystal silicon is provided on the outer periphery above the mounting table 2. Furthermore, a cylindrical inner wall member 3 a made of, for example, quartz is provided on the outer periphery of the mounting table 2 so as to surround the periphery of the mounting table 2 and the support table 4.

  Above the mounting table 2, the shower head 16 that functions as an upper electrode so as to face the mounting table 2 substantially in parallel, in other words, to face the semiconductor wafer W mounted on the mounting table 2. Is provided. The shower head 16 and the mounting table 2 function as a pair of electrodes (upper electrode and lower electrode). A high frequency power source 10a is connected to the base material 2a of the mounting table 2 via a matching unit 11a. A high frequency power source 10b is connected to the base material 2a of the mounting table 2 via a matching unit 11b. The high frequency power supply 10 a supplies high frequency power of a predetermined frequency (for example, 100 MHz) used for generating plasma to the base material 2 a of the mounting table 2. The high-frequency power source 10b is a high-frequency power having a predetermined frequency used for ion attraction (bias), and a high-frequency power having a lower frequency (for example, 13 MHz) than the high-frequency power source 10a is applied to the substrate 2a of the mounting table 2. Supply.

  An electrostatic chuck 6 for electrostatically attracting the semiconductor wafer W is provided on the upper surface of the mounting table 2. The electrostatic chuck 6 has an insulator 6b and an electrode 6a provided inside the insulator 6b, and a DC power source 12 is connected to the electrode 6a. The electrostatic chuck 6 attracts and holds the semiconductor wafer W by the Coulomb force generated on the surface of the electrostatic chuck 6 by the DC voltage applied from the DC power supply 12.

  A flow path 2b through which a fluorine-based heat medium such as Galden (registered trademark) flows is formed inside the mounting table 2, and internal pipes 2c and 2d are connected to the flow path 2b. In addition, a heat medium may be used for cooling of the member used as the object of temperature control, and may be used for heating. The internal pipe 2c is connected to the temperature control device 30 via the external pipe 32c, and the internal pipe 2d is connected to the temperature control device 30 via the external pipe 32d. The heat medium supplied from the temperature control device 30 to the base material 2a through the external pipe 32c and the internal pipe 2c exchanges heat with the base material 2a when circulating through the flow path 2b in the base material 2a. Then, the temperature is returned to the temperature control device 30 via the internal pipe 2d and the external pipe 32d. By controlling the temperature of the heat medium by the temperature control device 30, the temperature of the support table 4 and the mounting table 2 can be controlled within a predetermined range.

  The mounting table 2 is provided with a pipe 18 for supplying a cooling gas (backside gas) such as helium gas to the back side of the semiconductor wafer W so as to penetrate the mounting table 2. The pipe 18 is connected to a backside gas supply source (not shown). With these configurations, the temperature of the semiconductor wafer W attracted and held by the electrostatic chuck 6 on the upper surface of the mounting table 2 can be controlled within a predetermined range.

  The shower head 16 described above is provided on the upper part of the lower container 1b so as to close the opening of the upper part of the lower container 1b in the processing container 1. The shower head 16 includes a main body portion 16 a and an upper top plate 16 b that forms an electrode plate, and is supported on the upper portion of the lower container 1 b via an insulating member 17. The main body portion 16a is formed of, for example, aluminum whose surface is anodized, and supports the upper top plate 16b in a detachable manner at the lower portion thereof. The upper top plate 16b is formed of a silicon-containing material such as quartz.

  A gas diffusion chamber 16c is formed inside the main body 16a. A large number of gas flow holes 16e are formed at the bottom of the main body 16a so as to be positioned below the gas diffusion chamber 16c. Further, the upper top plate 16b is formed with gas introduction holes 16f so as to penetrate the upper top plate 16b in the thickness direction, and each gas introduction hole 16f communicates with the gas flow hole 16e described above. doing.

  The main body 16a is formed with a gas inlet 16g for introducing a processing gas into the gas diffusion chamber 16c. One end of a pipe 15a is connected to the gas inlet 16g, and the other end of the pipe 15a is a processing gas supply source for supplying a processing gas for etching via a valve V1 and a mass flow controller (MFC) 15c. 15 is connected.

  The processing gas supplied from the processing gas supply source 15 is supplied to the gas diffusion chamber 16c through the pipe 15a. Then, the processing gas supplied to the gas diffusion chamber 16c diffuses in the gas diffusion chamber 16c, and is supplied in the form of a shower below the shower head 16 through the gas flow holes 16e and the gas introduction holes 16f. The

  On the upper surface of the main body portion 16a, there is provided a heat exchange member 16j in which a flow path 16k in which a heat medium such as Galden flows is formed. The heat exchange member 16j is formed of a material having high thermal conductivity such as metal. A joint 22a and a joint 22b are connected to the flow path 16k in the heat exchange member 16j. One end of the tube 20a is connected to the joint 22a, and the other end of the tube 20a is connected to one end of a joint 21a provided at the opening of the upper container 1a. The other end of the joint 21a is connected to the temperature control device 30 via the external pipe 31a.

  One end of the tube 20b is connected to the joint 22b, and the other end of the tube 20b is connected to one end of the joint 21b provided at the opening of the upper container 1a. The other end of the joint 21b is connected to the temperature control device 30 via the external pipe 31b. In the present embodiment, the external pipes 31a and 31b are formed of a conductive material such as metal. In the present embodiment, the external pipes 31 a and 31 b are connected to the ground via the upper container 1 a that is the housing of the substrate processing apparatus 100.

  The heat medium supplied from the temperature control device 30 to the flow path 16k of the heat exchange member 16j through the external pipe 31a and the tube 20a passes through the heat exchange member 16j when circulating through the flow path 16k in the heat exchange member 16j. Then, heat is exchanged with the shower head 16, and the process returns to the temperature control device 30 via the tube 20b and the external piping 31b. By controlling the temperature of the heat medium by the temperature control device 30, the temperature of the shower head 16 can be controlled within a predetermined range via the heat exchange member 16j.

  A variable DC power source 52 is electrically connected to the shower head 16 as the upper electrode through a low-pass filter (LPF) 51. The variable DC power supply 52 can control the supply and interruption of DC power by a switch 53. The current and voltage of the variable DC power supply 52 and the on / off of the switch 53 are controlled by the control unit 60 described later. As will be described later, when high frequency power is supplied from the high frequency power supply 10a and the high frequency power supply 10b to the mounting table 2 and plasma is generated in the processing space, the switch 53 is turned on by the control unit 60 as necessary. A predetermined DC voltage is applied to the shower head 16 as the upper electrode.

  An exhaust port 71 is formed at the bottom of the lower container 1b. An exhaust device 73 is connected to the exhaust port 71 via an exhaust pipe 72. The exhaust device 73 has a vacuum pump. By operating this vacuum pump, the inside of the processing container 1 can be depressurized to a predetermined degree of vacuum. An opening 74 is provided on the side wall of the lower container 1b, and a gate valve 75 for opening and closing the opening 74 is provided in the opening 74.

  Depot shields 76 and 77 are detachably provided on the inner wall of the lower container 1b along the surface of the inner wall. The deposition shields 76 and 77 have a function of preventing etching by-products (depots) from adhering to the inner wall of the lower container 1b. The deposition shield 77 is provided so as to cover the outer peripheral surface of the mounting table 2, the inner wall member 3 a, and the support table 4 that function as a lower electrode. A conductive member (GND block) 79 connected to the ground in a DC manner is provided at the position of the deposition shield 76 that is substantially the same height as the semiconductor wafer W held by suction on the electrostatic chuck 6. Abnormal discharge in the processing container 1 is suppressed by the conductive member 79.

  A ring magnet 80 is disposed concentrically around the processing container 1. The ring magnet 80 forms a magnetic field in the space between the shower head 16 and the mounting table 2. The ring magnet 80 is rotatably held by a rotation mechanism (not shown).

  The operation of the substrate processing apparatus 100 having the above-described configuration is comprehensively controlled by the control unit 60. The control unit 60 includes a CPU (Central Processing Unit), and includes a process controller 61 that controls each unit of the substrate processing apparatus 100, a user interface 62, and a storage unit 63. The user interface 62 is a keyboard on which a process manager inputs commands to manage the substrate processing apparatus 100, a display that visualizes and displays the operating status of the substrate processing apparatus 100, and the like.

  The storage unit 63 stores a recipe including processing condition data for realizing various processes in the substrate processing apparatus 100, and a control program (software). Then, the process controller 61 calls and executes an arbitrary recipe from the storage unit 63 in accordance with an instruction from the user interface 62, whereby a desired process is performed by the substrate processing apparatus 100. In addition, recipes and control programs including processing condition data may be stored in computer-readable computer recording media (for example, hard disks, CDs, flexible disks, semiconductor memories, etc.), or It is also possible to use a device transmitted from another device, for example, via a communication line.

  Here, a heat exchange member 16j through which a heat medium flows is provided on the upper surface of the shower head 16, and the temperature of the shower head 16 falls within a predetermined range by the heat medium flowing through the heat exchange member 16j. To be controlled. The heat medium flowing through the heat exchange member 16j is supplied from the temperature control device 30 via the external pipe 31a and the tube 20a, and after the heat exchange with the heat exchange member 16j, the temperature is controlled via the tube 20b and the external pipe 31b. Returned to device 30. In this embodiment, an insulating material such as Galden is used as the heat medium.

  When the insulating heat medium flows through the tube formed of an insulating material, static electricity is generated due to friction between the heat medium and the inner wall of the tube, and the inner wall of the tube is charged. When the amount of electrostatic charge exceeds the pressure resistance of the tube, a discharge occurs in the tube, and the inner wall of the tube may be damaged by the discharge.

  In order to avoid this, the entire tube is made of a conductive material with low resistance, and the tube is connected to a reference potential such as ground, so that static electricity generated by friction between the heat medium and the inner wall of the tube can be prevented. It is possible to escape to the outside. However, if the process is executed with the potential of the member whose temperature is to be controlled being different from the reference potential to which the tube is connected, a tube made of a material with low resistance and conductivity is used. Cannot be used.

  In addition, since a tube formed of a conductive material having a low resistance value has many materials having high thermal conductivity, heat can escape in both directions of IN / OUT. Therefore, it is difficult to maintain a thermally stable state. Therefore, in the following, the structure of a tube capable of reducing the amount of electrostatic charge due to the circulation of an insulating heat medium was examined.

[Example 1]
FIG. 2 is a cross-sectional view illustrating an example of the tube 20 in the first embodiment. The tube 20 in the present embodiment includes a first tube 200, a relay member 201, and a second tube 202. In addition, in order to increase the mechanical strength, the outer side of the tube 20 in the present embodiment may be covered with a protective film such as a heat-shrinkable tube or a glass blade.

  The first tube 200 is formed of an insulating material. Examples of the insulating material include at least one of polytetrafluoroethylene (PTFE) and other fluorine-based resins (for example, PFE, FEP, etc.). One end of the first tube 200 is connected to the flow path 16k of the heat exchange member 16j through the joint 22. The other end of the first tube 200 is connected to one end of the relay member 201.

  The relay member 201 is formed of a conductive material, and relays the first tube 200 and the second tube 202. The relay member 201 is formed of, for example, a metal containing at least one of stainless steel, aluminum, carbon steel, or copper. One end of the relay member 201 is connected to the other end of the first tube 200, and the other end of the relay member 201 is connected to one end of the second tube 202.

  The second tube 202 is formed of a conductive material. In the present embodiment, the second tube 202 is formed of, for example, a metal containing at least one of stainless steel, aluminum, and copper. Further, the second tube 202 is longer than the first tube 200.

  One end of the second tube 202 is connected to the other end of the relay member 201, and the other end of the second tube 202 is connected to the joint 21 formed of a conductive material. The joint 21 is connected to a reference potential such as ground. Thereby, the distribution path of the heat medium becomes, for example, as shown in FIG. FIG. 3 is a schematic diagram illustrating an example of a heat medium flow path in the first embodiment.

  As shown in FIG. 3, the heat medium is supplied from the temperature control device 30 into the upper container 1a through the external pipe 31a, and exchanges heat through the second tube 202a and the first tube 200a of the tube 20a. It is supplied into the flow path 16k of the member 16j. The heat medium is exchanged with the heat exchange member 16j, and then returned to the outside of the upper container 1a via the first tube 200b and the second tube 202b of the tube 20b, and is connected to the external piping. It is returned to the temperature control device 30 via 31b.

  With such a configuration, static electricity generated on the inner wall of the second tube 202 due to the insulating heat medium flowing through the second tube 202 can be released to the outside through the joint 21. Therefore, the amount of static electricity charged on the inner wall of the second tube 202 can be reduced.

  On the other hand, since the first tube 200 is formed of an insulating material, static electricity charged on the inner wall of the first tube 200 due to the insulating heat medium flowing through the first tube 200 is not generated. , Hardly flows into the joint 21. However, the first tube 200 in this embodiment is a part of the tube 20, and most of the flow path of the heat medium formed by the tube 20 is configured by the second tube 202.

  Therefore, compared with the case where the whole tube 20 is comprised only using the 1st tube 200, the 1st tube 200 in a present Example has a small contact area with the heat medium which distribute | circulates an inside. Therefore, the amount of static electricity generated on the inner wall of the first tube 200 when the heat medium circulates in the first tube 200 is larger than that when the entire tube 20 is configured using only the first tube 200. Few.

  Therefore, in the tube 20 of the present embodiment, the amount of static electricity due to the circulation of the heat medium can be reduced as compared with the case where the entire tube 20 is configured using only an insulating material. Note that the lower the proportion of the first tube 200 in the length of the tube 20, the more static electricity generated by the first tube 200 can be reduced. Therefore, it is preferable to make the first tube 200 as short as possible.

  In the present embodiment, the relay member 201 and the second tube 202 formed of a conductive material are electrically connected, and grounding or the like via the joint 21 provided in the upper container 1a. Connected to the reference potential. However, the joint 22 provided on the heat exchange member 16j and the relay member 201 are connected by the first tube 200 formed of an insulating material. Thereby, the heat exchange member 16j and the reference potential to which the relay member 201 and the second tube 202 are connected can be electrically insulated. As a result, it is possible to execute a predetermined process by setting the potential of the heat exchange member 16j whose temperature is to be controlled to a potential different from the reference potential to which the relay member 201 and the second tube 202 are connected. .

  When the tube 20 is long, even the second tube 202 made of a conductive material has a reference potential connected via the joint 21 at the end far from the joint 21. On the other hand, a potential difference may occur. In order to avoid this, the second tube 202 between the relay member 201 and the joint 21 or the relay member 201 may be connected to the ground by an earth band or the like.

  Furthermore, when the tube 20 is formed only from a material having low resistance and having conductivity, the second tube 202 is in a state where heat escapes in both directions of IN / OUT because there are many materials having high thermal conductivity. Can be. However, since the tube 20 of the present embodiment includes the first tube 200 formed of an insulating material and the tube 202 formed of a conductive material having a low resistance value, By separating the escape direction into a single direction, it is possible to reduce the direction in which heat escapes.

[Example 2]
FIG. 4 is a cross-sectional view illustrating an example of the tube 20 in the second embodiment. The tube 20 includes a first tube 200, a relay member 201, and a second tube 202. In the present embodiment, the second tube 202 is formed of an insulating material, and a film 203 is formed on the inner side of the conductive material as shown in FIG. 4, for example. The second tube 202 is formed of, for example, a material containing at least one of polytetrafluoroethylene (PTFE) and other fluorine-based resins (for example, PFE, FEP, etc.). The film 203 is formed of a conductive material.

  The second tube 202 is formed of an insulating material, and the conductive film 203 is formed on the inner side, so that a short circuit during construction of the tube 20 can be prevented and the heat medium can be circulated. The accompanying charging of the tube 20 can be suppressed.

[Example 3]
FIG. 5 is a cross-sectional view illustrating an example of the tube 20 in the third embodiment. The tube 20 includes a first tube 200, a relay member 201, and a second tube 202. The second tube 202 is formed of a conductive material. In the present embodiment, the second tube 202 has a bellows portion 205 and a straight portion 204 whose inner wall is smoother than the bellows portion 205. Note that the inner wall of the first tube 200 is also smoother than the inner wall of the bellows portion 205. In the present embodiment, the bellows portion 205 is formed on the second tube 202, whereby the second tube 202 can be easily bent and stretched at the portion where the bellows portion 205 is formed, and the workability of the tube 20 is improved. Can be improved.

  On the other hand, when the bellows portion 205 is provided in the tube 20, when the heat medium flows through the bellows portion 205, the flow of the heat medium is disturbed, and the amount of friction between the inner wall of the bellows portion 205 and the heat medium increases. As a result, the amount of static electricity generated between the inner wall of the bellows portion 205 and the heat medium also increases. However, the bellows portion 205 is formed of a conductive material, and is connected to a reference potential such as ground via the joint 21. Therefore, static electricity generated between the inner wall of the bellows portion 205 and the heat medium flows to the ground through the joint 21, and the amount of static electricity in the second tube 202 is suppressed.

  On the other hand, in this embodiment, since the bellows portion 205 is not formed in the first tube 200, it is difficult to bend and stretch the portion of the first tube 200. However, since the first tube 200 is shorter than the second tube 202, even if it is difficult to bend and stretch the first tube 200, the effect on the workability of the entire tube 20 is negligible. Further, since the bellows portion 205 is not formed on the first tube 200, an increase in static electricity generated due to friction between the inner wall of the first tube 200 and the heat medium is avoided.

[Example 4]
FIG. 6 is a schematic diagram illustrating an example of a heat medium flow path in the fourth embodiment. In the present embodiment, for example, as shown in FIG. 6, the heat medium is supplied from the temperature control device 30 into the upper container 1a via the external pipe 31a, and in the flow path 16k of the heat exchange member 16j via the tube 20a. To be supplied. The heat medium exchanges heat with the heat exchange member 16j, then returns to the outside of the upper container 1a through the tube 20b, and returns to the temperature control device 30 through the external pipe 31b.

  FIG. 7 is a cross-sectional view illustrating an example of the tube 20 according to the fourth embodiment. The tube 20 in this embodiment includes an outer tube 206 and a coating 207. In addition, the tube 20 in the present embodiment may be further covered with a protective film such as a heat-shrinkable tube or a glass blade on the outside of the external tube 206 in order to increase the mechanical strength.

  The outer tube 206 is formed of an insulating material. As the insulating material, for example, a material containing at least one of polytetrafluoroethylene (PTFE) and other fluorine-based resins (for example, PFE, FEP, etc.) is used. A coating 207 is provided on the inner wall of the outer tube 206.

  The film 207 is formed of a material that is electrically conductive but has a high resistance value, for example, a material containing carbon. The resistance value of the film 207 is preferably a resistance value that hardly affects the process performed in the processing container 1 of the substrate processing apparatus 100. In this embodiment, the resistance value per unit length of the coating film 207 is, for example, a resistance value within a range of 3 kΩ / mm to 23 kΩ / mm. Further, the resistance value per unit length of the film 207 is more preferably a resistance value in the range of, for example, 3.4 kΩ / mm to 22.4 kΩ / mm. Therefore, the resistance value of the entire tube 20 in the present embodiment is preferably several hundred kΩ to several MΩ. One end of the coating 207 is connected to the joint 22. In addition, the other end of the coating 207 is conductive and contacts the joint 21 formed of a material having a lower resistance value than the coating 207, and the coating 207 and the joint 21 are electrically connected. The joint 21 is connected to a reference potential such as ground.

  By connecting the upper container 1a and the heat exchange member 16j with the tube 20 shown in FIG. 7, static electricity generated on the inner wall of the tube 20 due to the heat medium having an insulating property flowing through the tube 20, It can escape to the outside through the joint 21. Therefore, the amount of static electricity charged on the inner wall of the tube 20 can be reduced.

  FIG. 8 is a diagram illustrating an example of an experimental result of a temporal change in charge amount in the tube of the comparative example and the tube 20 of the fourth example. In FIG. 8, the horizontal axis indicates the time during which the insulating heat medium flows in the tube, and the vertical axis indicates the amount of static electricity charged in the tube as the heat medium flows.

  The tube of the comparative example is made of polytetrafluoroethylene (PTFE), and the inner wall is not provided with a film made of a conductive material. Therefore, in the tube of the comparative example, static electricity is accumulated due to friction with the heat medium flowing inside, and for example, as shown in FIG. 8, the longer the time for which the heat medium flows, the greater the amount of electrostatic charge. And in the tube of a comparative example, when predetermined time passes, the electrostatic charge amount will reach the pressure | voltage resistance (for example, 30 kV) of a tube, and discharge will occur in a tube. Thereby, in the tube of a comparative example, the inside of a tube may be damaged.

  On the other hand, in the tube 20 of the fourth embodiment, when the heat medium flows inside, static electricity is accumulated to some extent due to friction with the heat medium. However, in this embodiment, the static electricity charged in the tube 20 flows through the conductive coating 207 provided inside the tube 20 and flows to the reference potential via the joint 21. Therefore, in the tube 20 of this embodiment, the electrostatic charge amount is saturated at about 1 kV. As a result, in the tube 20 of the present embodiment, even if the time during which the heat medium flows inside becomes longer, the amount of static electricity does not reach the withstand voltage (for example, 30 kV) of the tube 20 and discharge due to static electricity does not occur. Therefore, in the tube 20 of the present embodiment, it is possible to suppress deterioration of the tube 20 through which an insulating heat medium flows.

  In addition, in the tube 20 of this embodiment, the conductive film 207 is provided on the inner side, but the resistance value of the film 207 is a relatively high value. Therefore, even if the upper container 1a and the heat exchange member 16j are connected by the tube 20 having the conductive coating 207 provided on the inner side, the process performed in the processing container 1 of the substrate processing apparatus 100 is almost impossible. Does not affect. Therefore, it is possible to execute a predetermined process by setting the potential of the heat exchange member 16j to be temperature controlled to a potential different from the reference potential to which the tube 20 is connected.

  Further, in the tube 20 of the present embodiment, a conductive coating 207 is provided on the inner side, and an insulating outer tube 206 is provided on the outer side. Therefore, when the outside of the tube 20 comes into contact with other equipment in the substrate processing apparatus 100, a short circuit during construction of the tube 20 can be prevented.

[Example 5]
FIG. 9 is a cross-sectional view illustrating an example of the tube 20 in the fifth embodiment. The tube 20 in this embodiment includes an outer tube 206 and a coating 207. The outer tube 206 has a bellows portion 208a and a straight portion 209a whose inner wall is smoother than the bellows portion 208a. The coating 207 has a bellows portion 208b and a straight portion 209b whose inner wall is smoother than the bellows portion 208b. In the tube 20 of the present embodiment, the bellows portion 208 is formed on the external tube 206 and the coating 207, whereby the tube 20 can be easily bent and stretched at the portion where the bellows portion 208 is formed. Can be improved.

  Further, in the portion where the bellows portion 208 is provided, when the heat medium flows through the tube 20, the flow of the heat medium is disturbed, and the amount of friction between the inner wall of the bellows portion 208 and the heat medium increases. Thereby, the amount of static electricity generated between the inner wall of the bellows portion 208 and the heat medium also increases. However, the heat medium flowing through the tube 20 comes into contact with the bellows 208 of the coating 207 formed of a conductive material. Therefore, static electricity generated by friction between the inner wall of the bellows portion 208 and the heat medium flows through the coating 207 and flows to the reference potential via the joint 21. Thereby, in the tube 20 of a present Example, the electrostatic charge amount does not increase to the pressure | voltage resistance of the tube 20, and the discharge by static electricity does not generate | occur | produce. Therefore, in the tube 20 of the present embodiment, deterioration of the tube 20 due to static electricity can be suppressed and workability of the tube 20 can be improved.

  The embodiment has been described above. In addition, this invention is not limited to above-described embodiment, Many deformation | transformation are possible within the range of the summary.

  For example, in Example 3 described above, the bellows portion 205 is provided in the second tube 202, but the present invention is not limited to this, and the bellows portion 205 may be provided in the first tube 200. By providing the bellows portion 205 in the first tube 200, the amount of static electricity due to friction with the heat medium flowing inside increases, but the first tube 200 is shorter than the second tube 202, so the entire tube 20 As a result, the amount of static electricity will not increase so much.

  Moreover, although the tube 20 in the above-described Examples 4 and 5 includes the outer tube 206 and the coating 207, the disclosed technology is not limited thereto, and at least the inner wall of the tube 20 is formed of a conductive material. Other structures may be used. For example, the entire tube 20 may be formed of a conductive material having a high resistance value. However, even in this case, the charge amount of the tube 20 is preferably 1 kV or less. Further, the entire tube 20 may be formed of a conductive material having a high resistance value, and at least a part of the tube 20 in the longitudinal direction may be formed in a bellows shape.

  In each of the above-described embodiments, the substrate processing apparatus 100 is described as an example of an apparatus that performs etching using plasma. However, the substrate processing apparatus 100 to which the present invention can be applied is not limited to this, and plasma is used. The present invention can also be applied to a film forming apparatus or an apparatus that performs a process of modifying a substrate surface using plasma.

  In each of the above-described embodiments, the tube 20 that flows the heat medium to the heat exchange member 16j that exchanges heat with the shower head 16 has been described as an example. However, the present invention is not limited to this, and the base material 2a of the mounting table 2 is used. The tube 20 of the present invention can also be applied to the internal pipes 2c and 2d that allow the heat medium to flow through the flow path 2b formed in the above.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above-described embodiment. In addition, it is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

20 tube 200 first tube 201 relay member 202 second tube 21 joint 22 joint

Claims (15)

A tube that is provided in the substrate processing apparatus and supplies an insulating heat medium supplied from the outside of the substrate processing apparatus to a heat exchange member that exchanges heat with an object to be controlled in the substrate processing apparatus. ,
A conductive tube formed of a conductive material;
An insulating tube made of an insulating material;
A tube comprising: a relay member that relays the conductive tube and the insulating tube.   The tube according to claim 1, wherein the conductive tube is longer than the insulating tube. One end of the conductive tube is electrically connected to the housing of the substrate processing apparatus,
The other end of the conductive tube is connected to one end of the relay member,
One end of the insulating tube is connected to the other end of the relay member,
The tube according to claim 1 or 2, wherein the other end of the insulating tube is connected to the heat exchange member. At least a part of the conductive tube is formed in a bellows shape,
The tube according to any one of claims 1 to 3, wherein at least an inner wall of the insulating tube is smoother than an inner wall of a portion of the conductive tube formed in a bellows shape.   The tube according to any one of claims 1 to 4, wherein the conductive tube is formed of a material containing at least one of stainless steel, aluminum, carbon steel, and copper. The conductive tube is
An outer tube formed of an insulating material;
The tube according to any one of claims 1 to 4, further comprising: a coating formed of a conductive material and covering an inner wall of the outer tube.   The tube according to any one of claims 1 to 6, wherein the insulating tube is formed of a material containing at least one of polytetrafluoroethylene, PFE, or FEP.   The tube according to any one of claims 1 to 7, wherein the relay member is formed of a material containing at least one of stainless steel, aluminum, carbon steel, and copper. A conductive tube provided in the substrate processing apparatus and formed of a conductive material, an insulating tube formed of an insulating material, and a relay that relays the conductive tube and the insulating tube Using a tube with a member,
An insulating heat medium supplied from the outside of the substrate processing apparatus is supplied to a heat exchange member that performs heat control target heat exchange in the substrate processing apparatus. A tube that is provided in the substrate processing apparatus and supplies an insulating heat medium supplied from the outside of the substrate processing apparatus to a heat exchange member that exchanges heat with an object to be controlled in the substrate processing apparatus. ,
A tube characterized in that at least an inner wall is formed of a conductive material having a charge amount of 1 kV or less. An outer tube formed of an insulating material;
The tube according to claim 10, further comprising a coating formed of the conductive material and covering an inner wall of the outer tube.   The tube according to claim 10 or 11, wherein the conductive material is a carbon-containing material.   13. The tube according to claim 10, wherein a resistance value per unit length of the conductive material is a resistance value in a range of 3 kΩ / mm to 23 kΩ / mm.   The tube according to any one of claims 10 to 13, wherein at least a part of the tube is formed in a bellows shape. Using a tube provided in a substrate processing apparatus, and at least an inner wall is formed of a conductive material having a charge amount of 1 kV or less,
An insulating heat medium supplied from the outside of the substrate processing apparatus is supplied to a heat exchange member that performs heat control target heat exchange in the substrate processing apparatus.

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