JP2016111184A - Color solid-state imaging element, method of manufacturing the same, and photomask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide manufacturing means for forming a microlens, provided in a color solid-state imaging element, with a proper thickness for each color of a coloring transparent material, by an inexpensive manufacturing method.SOLUTION: A photosensitive transparent resin layer 8 composing a microlens is formed directly on a color filter 7, and patterned by photolithography using a photomask 10 where density gradation is provided in one microlens pattern, thus forming microlenses 6 of convex shape having different lens heights on each coloring transparent pixel of the color filter 7, in one process.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a color solid-state imaging device and a method for manufacturing the same, and particularly relates to a technique relating to a microlens used for light collection.

In recent years, imaging devices have been widely used with the expansion of the contents of image recording, communication, and broadcasting. Various types of image pickup devices have been proposed. An image pickup device incorporating a solid-state image pickup device that has been stably manufactured with a small size, light weight, and high performance can be used as a digital camera or digital video. It is becoming popular.
The solid-state imaging device has a plurality of photoelectric conversion elements that receive an optical image from a subject and convert incident light into an electrical signal. The types of photoelectric conversion elements are roughly classified into CCD (charge coupled device) type and CMOS (complementary metal oxide semiconductor) type. Further, two types of arrangements of photoelectric conversion elements, a linear sensor (line sensor) in which the photoelectric conversion elements are arranged in one row, and an area sensor (surface sensor) in which the photoelectric conversion elements are two-dimensionally arranged in the vertical and horizontal directions. It is divided roughly into. In any of the sensors, as the number of photoelectric conversion elements (number of pixels) increases, the captured image becomes more precise. In recent years, in particular, a method for manufacturing a solid-state imaging element having a large number of pixels at low cost has been studied.

  One of the important issues in performance required for a solid-state imaging device is to improve the sensitivity to incident light. In order to increase the amount of information of an image photographed with a miniaturized solid-state imaging device, it is necessary to miniaturize and highly integrate a photoelectric conversion device serving as a light receiving unit. However, when the photoelectric conversion elements are highly integrated, the area of each photoelectric conversion element is reduced, and the area ratio that can be used as the light receiving portion is also reduced. Therefore, the amount of light that can be taken into the light receiving portion of the photoelectric conversion element is reduced. Sensitivity is reduced. As a means for preventing the sensitivity reduction of such a miniaturized solid-state imaging device, in order to efficiently capture light into the light receiving part of the photoelectric conversion device, the light incident from the object is condensed on a pixel-by-pixel basis. Patent Document 1 proposes a technique for forming a microlens leading to a light receiving portion of a conversion element in a uniform shape on the photoelectric conversion element. By condensing the light with the microlens and guiding it to the light receiving portion of the photoelectric conversion element, the apparent aperture ratio of the light receiving portion can be increased, and the sensitivity of the solid-state imaging device is improved.

  FIG. 1 shows a colorization in which one colorless and transparent microlens is provided for each pixel on a color filter pixel composed of a colored transparent resin layer to collect light and separate the color-separated light to a light receiving portion of a photoelectric conversion element. It is a schematic cross section for demonstrating the structural example of the solid-state image sensor which was performed. In this case, the colored solid-state image pickup device 1 has a transparent flattening layer 5 on the light-receiving surface side surface 4 of the solid-state image pickup device pixel portion in which a plurality of photoelectric conversion devices 3 regularly provided on the semiconductor substrate 2 are arranged in a plane. A plurality of colored transparent pixel pattern color filters 7 that repeatedly arrange a plurality of colors are provided corresponding to each of the photoelectric conversion elements 3, and the second transparent flattening layer 51 further provides a colored transparent pixel pattern color filter 7. After the flattening on the plane on which the light emitting elements are arranged, the microlenses 6 are provided so as to correspond to the colored transparent pixel patterns and the photoelectric conversion elements 3 of the filter 7, so that the sensitivity can be improved.

Further, Patent Document 2 proposes a structure that reduces the sensitivity variation at the time of imaging by optimizing the positional relationship between the colored transparent pixel pattern and the microlens.
Various proposals have been made as a method for forming the above-described microlens, and a method utilizing deformation accompanying thermal melting of a photosensitive resin is mainly used. For example, a flow lens type that applies photosensitivity to a transparent resin that is the material of a microlens, uniformly coats it, selectively forms a pattern by photolithography, and then uses the thermal reflow properties of the material to create a lens shape Is proposed in Patent Document 3, and a lens matrix is formed by a photolithography method and thermal reflow using a resist material having alkali solubility, photosensitivity, and thermal reflow on a flat layer of a transparent resin as a microlens material. Patent Document 4 proposes a transfer type in which a mold is formed and the shape of a lens matrix is transferred to a transparent resin layer by a dry etching method.

Japanese Patent Laid-Open No. 3-152972 JP-A-8-316445 JP 2008-34509 A JP 2009-152315 A

  Necessary to keep the effective sensitivity of the solid-state imaging device high by making the light capturing area of the microlens as wide as possible, that is, by narrowing the gap with the adjacent microlens and keeping the lens shape good It becomes a condition. However, when manufacturing with the flow lens method, which has a relatively short manufacturing process, the thermal reflow behavior of the resin at the boundary between adjacent microlenses is controlled to maintain a narrow gap and good shape. Has a high degree of difficulty and causes quality instability. In a color solid-state imaging device for inputting a color image using a colored transparent pixel pattern, the size of a microlens provided on the colored transparent pixel corresponding to the pixel for each photoelectric conversion element or a gap with an adjacent microlens, If the condensing performance varies due to variations in the lens shape, the sensitivity balance for each color will be lost and defects such as unevenness in color expression will clearly occur, so there is a greater need to improve the performance of the microlenses. Become.

In addition, since the colored transparent resin material constituting the color filter has a difference in light condensing property due to different optical characteristics such as refractive index for each color, the microlens provided on the colored transparent pixel has an appropriate film thickness and color for each color. It is desirable to form in an appropriate shape. However, the film thickness of the microlens on the colored transparent pixel varies in accordance with the film thickness variation for each color that occurs during the film formation of the colored transparent material. For this reason, in order to suppress the condensing performance degradation due to the film thickness variation, as shown in FIG. 1, the second transparent flattening layer 51 arranges the colored transparent pixel patterns on the upper surface by the flattening process. Microlenses are formed uniformly. However, an increase in the number of processes for manufacturing a solid-state imaging device increases the burden on quality assurance and manufacturing cost.
The present invention is proposed in view of these problems, and provides a manufacturing means for forming a microlens provided in a color solid-state imaging device to an appropriate film thickness for each color of the colored transparent material by an inexpensive manufacturing method. The purpose is to do.

  In order to solve the problems, a color solid-state imaging device of one embodiment of the present invention includes a semiconductor substrate in which a surface is partitioned into a large number of pixels, and a photoelectric conversion element is disposed in each of the pixels, and the semiconductor substrate on the semiconductor substrate. A color solid-state imaging device comprising: a microlens arranged to collect incident light on each of the photoelectric conversion elements; and a color filter having a colored transparent pixel pattern set in advance between the semiconductor substrate and the row of microlenses. And at least one of a microlens height and a microlens shape is changed according to the color of the colored transparent pixel pattern.

The photomask for a microlens of one embodiment of the present invention has a surface partitioned into a large number of pixels, a photoelectric conversion element disposed in each of the pixels, and a semiconductor substrate disposed on the semiconductor substrate. A color solid-state imaging device comprising: a microlens for condensing incident light on each of the photoelectric conversion elements; and a color filter having a preset colored transparent pixel pattern disposed between the semiconductor substrate and the row of microlenses. In the photomask for forming the microlens on the color filter, a transmittance density level in the mask pattern for forming the microlens on the green pixel pattern among the colored transparent pixel patterns. On the red pixel pattern and the blue pixel pattern for the transmittance of the lowest transmittance region of the toned pattern The transmittance ratio of the lowest transmittance region of the pattern in which the transmittance density gradation is provided in the mask pattern for forming the microlens on the top is 1.0: 0.5 to 1.0: 3.0. It is characterized by being.
In the method for manufacturing a color solid-state imaging device of one embodiment of the present invention, a photosensitive transparent resin layer that should constitute a microlens is formed on the color filter, and the microlens for the one embodiment of the present invention is used. And a step of forming a convex microlens pattern by patterning by a photolithography method using a photomask.

According to the present invention, an appropriate lens height for each color of the colored transparent pixel pattern is formed on the color filter that forms a colored transparent pixel pattern in which a plurality of colors are regularly arranged corresponding to each of the plurality of photoelectric conversion elements. By providing a lens-shaped microlens, it is possible to provide a color solid-state imaging device with high sensitivity.
Here, when the microlens is directly formed on the colored transparent pixel (color filter), the flattening process is unnecessary and the manufacturing process can be reduced, and the material used in the microlens forming process and the manufacturing conditions are not significantly changed. Therefore, a high-quality color solid-state imaging device can be provided at low cost.

It is sectional drawing explaining the structural example of the color solid-state image sensor using a micro lens. It is sectional drawing explaining the manufacturing method of the color solid-state image sensor which concerns on embodiment based on this invention. The top view explaining the photomask with a density gradation. It is a top view explaining an example of the photomask with a density gradation which concerns on embodiment based on this invention. It is sectional drawing explaining the other example of the manufacturing method of the color solid-state image sensor which concerns on embodiment based on this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments.
As described above, as a basic manufacturing process of the microlens, there are a flow lens type that directly forms a lens shape and an etching transfer type from a lens matrix, and any method can be selected in the present invention. Since an etching process is unnecessary, it is desirable to manufacture a micro lens of a flow lens type, but a manufacturing method is selected depending on a pattern size and a micro lens shape.

FIG. 2 is a schematic cross-sectional view for explaining the flow lens type microlens manufacturing method of the solid-state imaging device of the present embodiment, which is performed in the order of steps (a) to (d).
FIG. 2A is a schematic cross-sectional view before providing a microlens for a color solid-state imaging device, in which a plurality of photoelectric conversion elements 3 regularly provided on a semiconductor substrate 2 such as silicon are arranged in a plane. A plurality of color filters 7 for forming a colored transparent pixel pattern in which a plurality of colors are repeatedly arranged are provided on the light-receiving surface side surface of the element pixel portion in correspondence with the photoelectric conversion element 3 through the transparent flattening layer 5. A state in which the transparent resin layer 8 that should constitute the microlens is uniformly applied and formed on the filter 7 is shown.

  The transparent resin layer 8 is formed by, for example, imparting alkali solubility, photosensitivity, and thermal reflow property to an acrylic transparent resin material, and using a spin coater to have an arbitrary film thickness of 0.5 to 0.8 μm when dried. It is performed by uniformly coating with a film thickness. In particular, the thermal reflow property is a performance necessary for obtaining a smooth microlens having a small surface roughness. However, since the microlens shape is changed by the thermal reflow, the degree of reflow is considered in accordance with the desired microlens shape. It is desirable to select materials. After the application of the transparent resin layer 8, it is uniformly dried in a short time using a hot plate.

  Next, as the exposure step, as shown in FIG. 2B, the photosensitive transparent resin layer 8 is patterned by a photolithography method. Hereinafter, an example using a positive photosensitive material will be described. For the positive photosensitive transparent resin layer 8, a photomask 10 with a density gradation in which a pattern of the light shielding portion 11 provided with a density gradation corresponding to a region to be formed in a microlens shape is used.

FIG. 3 is a schematic plan view for explaining an example of a microlens photomask in the manufacture of the solid-state imaging device of the present embodiment, and FIG. 3A is a case of a normal binarized photomask. FIG. 3B shows the case of a photomask provided with density gradation.
When the photomask having the density gradation shown in FIG. 3B is used, for example, the central portion of each light shielding part pattern has the maximum light shielding density in the pattern area of the light shielding part 11 with density gradation. Then, the light shielding pattern with density gradation is set such that the light shielding performance decreases toward the periphery. By appropriately controlling the density gradation, it is possible to reproduce the film thickness following a gentle change in the exposure amount in the photolithography method and obtain a convex curved surface after development.

  Note that a normal binarized photomask distinguishes the pattern of the light-shielding portion 14 made of a light-shielding film such as metallic chrome on the surface of a substrate such as quartz or glass that has good transparency with respect to the exposure light from the light transmitting portion 15. It is produced by a generally known method such as a pattern forming method. Further, in order to form the light-shielding portion 11 with density gradation, a normal method for manufacturing a photomask with density gradation can be applied on the substrate. That is, in order to add density gradation, a method of providing a density gradient in the region by gradually changing the film thickness of a light-shielding metal film or the like, or light shielding such as dot (halftone dot) arrangement or line and space For example, a gray tone type method in which a density gradation is given to the average light-shielding density of each fine pattern region by changing the aggregate state of the fine patterns of the film can be applied.

  The mask pattern for forming the microlens is desirably provided with an appropriate density gradation for each color of the colored transparent pixel. 4A and 4B show an example of a mask pattern (light-shielding pattern) in which density gradation is provided by appropriately arranging the light-shielding region 16 and the light transmission region 17. For example, when forming a microlens having a lower lens height formed on a blue transparent pixel (blue pixel pattern) than a lens height formed on a green transparent pixel (green pixel pattern) of the color filter 7, FIG. As shown in FIG. 4A, the shade density gradation of the mask pattern 111 provided with the density gradation for forming the microlens on the blue transparent pixel is formed on the green transparent pixel as shown in FIG. In the patterning of the uniformly formed photosensitive transparent resin layer 8 by making it relatively lower than the light shielding density gradation of the mask pattern 112 provided with the density gradation for forming the microlens, the same exposure condition is used. Thus, microlenses can be formed with appropriate lens height and lens shape for each color. Of course, the number of steps is also increased by a method of optimizing the exposure conditions for each color using the photomask 10 provided with the light-shielding portion 11 having the same density gradation for all colors. Can be formed.

In the present embodiment, the ratio of the height of the microlens formed on the blue pixel pattern and the red pixel pattern to the height of the microlens formed on the green pixel pattern is 1.0: 0.5 to 1. It is desirable to adjust within the range of 0.0: 1.5.
This is because if the lens height is too high for each pixel color, the condensing position becomes high, so that the condensing performance to the light receiving element is deteriorated. This is because the optical performance is lowered.

The height of the microlens is designed by properly designing the thickness control of the photosensitive resin layer for each pixel color in the exposure process after forming the transparent resin layer 8 having photosensitivity in the manufacturing process with a uniform film thickness. Do it.
This film thickness control is performed by optimizing the light-shielding region having the lowest transmittance in the photomask for each pixel color using a photomask in which density gradation is provided in the pixel pattern in order to form a microlens. The transmittance for each pixel color is set according to the exposure sensitivity characteristic of the transparent resin having the photosensitivity to be applied.

  In addition, it is desirable to provide density gradation so as to have a certain degree of light shielding density also in the periphery of the light shielding part 11 with density gradation corresponding to between colored transparent pixels (colored transparent pixel patterns). As a result, the photosensitive transparent resin layer 8 is left between the convex microlenses and the color filter 7 as shown in FIG. The influence of film thickness variation for each color of the transparent pixel can be reduced. On the other hand, as one of the layers constituting the solid-state imaging device, the photosensitive transparent resin layer 8 constituting the microlens is formed after the color filter 7 is flattened by the second transparent flattening layer 51 shown in FIG. May be formed. In this case, a step of uniformly forming the second transparent planarizing layer 51 is required, but since the photosensitive transparent resin layer 8 is uniformly formed, the variation in the height of the formed microlens is suppressed. it can.

  In the exposure step shown in FIG. 2B, the photomask 10 with density gradation is accurately aligned with the position where the transparent resin layer 8 is to be patterned, and, for example, light having a wavelength of 365 nm from a mercury lamp light source is emitted. Exposure is performed by irradiating parallel irradiation light 9 from the i-line stepper to be used from the back surface of the photomask 10 with density gradation. The exposure conditions are determined by the film thickness and sensitivity of the photosensitive transparent resin layer 8 to be used, the conditions of the developer, and the like.

  Next, a development process is performed to form a transparent resin pattern 12 immediately after the development process, as shown in FIG. For the development processing, TMAH (tetramethylammonium hydroxide) or an amine-based organic alkali developer can be used. The development process of the transparent resin layer 8 can be uniformly advanced by a spin development method or a paddle development method, and other portions are dissolved and removed, leaving the transparent resin pattern 12 immediately after the development process corresponding to the light shielding portion 11 of the photomask 10. To do.

  Next, as shown in FIG. 2D, the microlens 6 is formed by molding the transparent resin pattern 12 by thermal melting using the thermal reflow property of the material. At this time, the microlens shape can be controlled by optimizing the heat treatment conditions after the development processing. Therefore, it is desirable to establish appropriate heat treatment conditions for forming the microlens into a desired shape. As described above, the flow lens type microlens 6 can be formed in a relatively short process by utilizing the photosensitivity and thermal reflow property of the transparent resin that is the material of the microlens.

FIG. 5 is a schematic cross-sectional view for explaining an example in which the microlens manufacturing process of the solid-state imaging device of the present embodiment includes an etching transfer type manufacturing process using a photomask with density gradation, (D) It carries out in order of a process.
FIG. 5A is a schematic cross-sectional view before providing the microlens of the color solid-state imaging device, and has a configuration similar to that of FIG. 2A described above. The resin layer 18 is laminated. The transparent resin layer 18 uniformly applies an acrylic transparent resin material to a film thickness of 0.5 to 0.8 μm at the time of drying using a spin coater. The drying process is performed uniformly in a short time using a hot plate. In addition, since the transparent resin material used for this example assumes the transcription | transfer by the dry etching mentioned later, the material excellent in dry etching aptitude is desirable. Furthermore, other transparent resin layers having different etching rates can be provided on the transparent resin layer 18. By stacking other transparent resin layers having different etching rates, the height of the microlens can be adjusted. As the material, an acrylic transparent resin material can be used.

  Next, a photoresist material, which is a resin having alkali solubility and photosensitivity, is uniformly applied on the transparent resin layer 18 by a spin coater to form a photoresist layer 19. As the photoresist layer 19, an acrylic or novolac positive resist material is uniformly applied with an arbitrary film thickness of 0.5 to 0.8 μm using a spin coater. Drying is performed at a low temperature of 100 ° C. or lower.

Next, as an exposure step, as shown in FIG. 5B, the photoresist layer 19 is patterned by a photolithography method. Here, a photomask 10 with a density gradation in which a pattern of the light shielding portion 11 provided with a density gradation corresponding to the region to be left in the microlens shape is prepared in advance for the positive photoresist layer 19. Keep it.
As for the mask pattern for forming the microlens matrix, it is desirable to provide an appropriate density gradation for each color of the colored transparent pixels, as described in FIG. This makes it possible to form a microlens matrix with an appropriate lens height and lens shape for each color under the same exposure conditions.

  In the exposure step shown in FIG. 5B, the photomask 10 with density gradation is accurately aligned with the position where the photoresist layer 19 is to be patterned, and, for example, light having a wavelength of 365 nm from a mercury lamp light source is emitted. Exposure is performed by irradiating parallel irradiation light 9 from the i-line stepper to be used from the back surface of the photomask 10 with density gradation. The exposure conditions are determined by the film thickness and sensitivity of the photoresist layer 19 to be used, the developer conditions, and the like.

  Next, development is performed to form a microlens pattern 20 for transfer using a photoresist, as shown in FIG. For development, TMAH (tetramethylammonium hydroxide) or an amine-based organic alkali developer can be used. The development process of the photoresist layer 19 can be uniformly progressed by the spin development or paddle development method, and other methods such as leaving the transfer microlens pattern 20 having a convex shape corresponding to the light shielding portion 11 of the photomask 10 are left. This part is dissolved and removed.

Next, the transfer microlens pattern 20 formed on the transparent resin layer 18 is etched and transferred to the transparent resin layer 18 as an etching resist to form the microlens 6 as shown in FIG. As an etching method, dry etching using a fluorine-based gas such as C ₃ F ₈ can be performed. The cross-sectional shape of the microlens 6 transferred by dry etching is basically faithful to the transfer microlens pattern 20 used as a lens matrix, but a photoresist layer 19 serving as a material for the transfer microlens pattern 20. And the transparent resin layer 18 that is the material of the microlens 6 varies depending on the etching rate ratio under the actual dry etching conditions and the etching depth, and the conditions are adjusted in each case.
The above-mentioned transfer type microlens 6 uses a lens matrix 20 obtained from a photoresist layer 19 that has a relatively high exposure sensitivity and can form a fine pattern with high accuracy, and accurately matches each color of the colored transparent pixels. A microlens can be formed in an appropriate lens height and lens shape.

DESCRIPTION OF SYMBOLS 1 ... Solid-state image sensor 2 ... Semiconductor substrate 3 ... Photoelectric conversion element 4 ... Light-receiving surface side surface 5 of a solid-state image sensor pixel part ... Transparent flattening layer 6 ... ..Microlens 7 ... Color filter (colored transparent pixel pattern)
8 ... Transparent resin layer (photosensitive)
9 ··· Irradiation light 10 ··· Photomask (with density gradation)
11 ... Light shielding portion with density gradation 12 ... Microlens 13 immediately after development processing ... Photomask (binarization)
DESCRIPTION OF SYMBOLS 14 ... Light-shielding part 15 ... Light transmission part 16 ... Light-shielding area 17 of mask pattern provided with density gradation ... Light-transmission area 18 of mask pattern provided with density gradation Layer (non-photosensitive)
19 ... Photoresist layer 20 ... Micro lens pattern for transfer (lens matrix)
51... Second transparent flattening layer 111... Mask pattern 112 provided with density gradation for forming microlenses on blue transparent pixels... Density gradation for forming microlenses on green transparent pixels Mask pattern with

Claims (7)

A semiconductor substrate having a surface partitioned into a large number of pixels, each of which has a photoelectric conversion element disposed thereon, and a microlens disposed on the semiconductor substrate for collecting incident light on each of the photoelectric conversion elements. In the color solid-state imaging device provided,
A color filter of a colored transparent pixel pattern set in advance is disposed between the semiconductor substrate and the microlens row,
A color solid-state imaging device, wherein at least one of a microlens height and a microlens shape is changed according to a color of the colored transparent pixel pattern.   The colored transparent pixel pattern has at least a green pixel pattern, a blue pixel pattern, and a red pixel pattern, and is formed on the blue pixel pattern and the red pixel pattern with respect to a microlens height formed on the green pixel pattern. 2. The color solid-state imaging device according to claim 1, wherein a ratio of heights of the microlenses to be set is in a range of 1.0: 0.5 to 1.0: 1.5.   3. The color solid-state imaging device according to claim 1, wherein a transparent resin layer made of the same material as that of the microlens is provided between the color filter and the row of the microlenses. A semiconductor substrate in which the surface is partitioned into a large number of pixels and a photoelectric conversion element is disposed in each of the pixels; a microlens disposed on the semiconductor substrate and collecting incident light on each of the photoelectric conversion elements; For forming the microlens on the color filter in a color solid-state imaging device that is disposed between the semiconductor substrate and the row of microlenses and includes a color filter having a preset colored transparent pixel pattern. A photomask,
Among the colored transparent pixel patterns, the red pixel pattern with respect to the transmittance of the lowest transmittance region of the pattern in which the transmittance density gradation is provided in the mask pattern for forming the microlens on the green pixel pattern and The transmittance ratio of the lowest transmittance region of the pattern in which the transmittance density gradation is provided in the mask pattern for forming the microlens on the blue pixel pattern is 1.0: 0.5 to 1.0: A photomask for microlenses, which is 3.0.   5. The microlens photomask according to claim 4, wherein density gradation is provided in one microlens pattern. A method of manufacturing the color solid-state imaging device according to claim 1 or 2, using the photomask according to claim 4 or 5,
Forming a color filter of a colored transparent pixel pattern in which a plurality of colors are regularly arranged corresponding to each of the plurality of photoelectric conversion elements, and then forming one microlens on each colored transparent pixel pattern of the color filter With
The step of forming the microlens includes forming a photosensitive transparent resin layer to constitute the microlens on the color filter, and performing photolithography using the photomask according to claim 4 or 5. A method for producing a color solid-state imaging device, comprising a step of patterning to form a convex microlens pattern. A method of manufacturing the color solid-state imaging device according to claim 1 or 2, using the photomask according to claim 4 or 5,
Forming a color filter of a colored transparent pixel pattern in which a plurality of colors are regularly arranged corresponding to each of the plurality of photoelectric conversion elements, and then forming one microlens on each colored transparent pixel pattern of the color filter With
The photolithographic method using the photomask according to claim 4 or 5, wherein in the step of forming the microlens, a photosensitive transparent resin layer that constitutes the microlens is directly formed on the color filter. A method for producing a color solid-state imaging device, comprising the step of patterning to form a convex microlens pattern.

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