JP2016089239A - Vapor phase growth method and vapor phase growth apparatus - Google Patents

Abstract

PURPOSE: To provide a vapor phase growth method capable of detecting the existence of positional deviation to the support part of a substrate by the deformation of the substrate accompanying a rise or fall in temperature of the substrate during the rise or fall in temperature.CONSTITUTION: The vapor phase growth method comprises: placing a substrate on a support part in a reactor; rotating the substrate at a predetermined rotation speed in the circumferential direction of the substrate; rising or falling the temperature of the substrate during rotation at predetermined rotation speed; measuring a plurality of temperatures of the periphery of the substrate during the rise or fall in temperature for every rotation angle of 120 degrees or less; and determining the existence of positional deviation to the support part of the substrate on the basis of a variation in the plurality of temperatures of the periphery of the substrate.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a vapor phase growth method and a vapor phase growth apparatus.

  As a method for forming a high-quality semiconductor film, there is an epitaxial growth technique in which a single crystal film is grown on a wafer (substrate) by vapor phase growth. In the vapor phase growth method and vapor phase growth apparatus using this epitaxial growth technique, a wafer is supported by a support portion in a reaction furnace maintained at normal pressure or reduced pressure. Next, a reactive gas which is a raw material for film formation is supplied onto the wafer. On the surface of the wafer, a thermal reaction of the reactive gas occurs, and an epitaxial single crystal film is formed.

  At the time of film formation, the temperature of the wafer is a temperature suitable for film formation, for example, about 800 ° C. to 1000 ° C. in the case of a Si wafer. Further, when a plurality of materials are formed in multiple layers, the temperature of the wafer is raised or lowered to a temperature suitable for the film formation of the materials. Therefore, the wafer may be thermally expanded or contracted, and the wafer may be displaced from the support portion in the reaction furnace, so that film formation cannot be performed.

JP 2002-043331 A

  The problem to be solved by the present invention is that it is possible to detect whether or not there is a positional shift with respect to the support portion of the substrate due to the deformation of the substrate accompanying the temperature increase or decrease of the substrate temperature during the temperature increase or decrease. A phase growth method and a vapor phase growth apparatus are provided.

  In the vapor phase growth method of the embodiment, the substrate is placed on a support in the reaction furnace, the substrate is rotated in the circumferential direction of the substrate at a predetermined rotation speed, and the temperature of the rotating substrate is increased at the predetermined rotation speed. The temperature of the substrate is measured based on the amount of change in the temperature of the outer periphery of the plurality of substrates. Whether or not there is a positional deviation with respect to is determined.

  In the vapor phase growth method of the above aspect, it is preferable to determine whether or not there is a positional shift with respect to the support portion of the substrate based on the difference between the maximum value and the minimum value of the temperature change amount of the outer peripheral portion of the substrate.

  In the vapor phase growth method according to the above aspect, it is preferable that the maximum value and the minimum value of the change amount of the temperature of the outer peripheral portion of the substrate are obtained using the temperature measured within the predetermined rotation speed immediately before.

  In the vapor phase growth method of the above aspect, the rotation angle is preferably 45 degrees or more.

  The vapor phase growth apparatus according to the embodiment includes a reaction furnace, a support unit that is disposed in the reaction furnace and on which the substrate is placed and rotates the substrate in the circumferential direction of the substrate, and a thermometer that measures the temperature of the outer periphery of the substrate A displacement determination unit that determines whether or not there is a displacement with respect to the support portion of the substrate based on the amount of change in the temperature of the outer peripheral portion of the substrate.

  According to the present invention, a vapor phase growth method capable of detecting whether or not there is a positional deviation with respect to the support portion of the substrate due to deformation of the substrate accompanying the temperature rise or fall of the substrate, during the temperature rise or temperature drop, and A vapor deposition apparatus can be provided.

It is a schematic cross section of the vapor phase growth apparatus in a 1st embodiment. It is a flowchart of the vapor phase growth method in 1st Embodiment. It is a schematic diagram which shows the temperature measuring method of the board | substrate outer peripheral part in 1st Embodiment. It is explanatory drawing of the effect | action in 1st Embodiment. It is a flowchart of the vapor phase growth method in 2nd Embodiment. It is explanatory drawing of the effect | action in 2nd Embodiment.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
In the vapor phase growth method of this embodiment, a substrate is placed on a support in a reaction furnace, the substrate is rotated at a predetermined rotation speed in the circumferential direction of the substrate, and the temperature of the substrate being rotated at a predetermined rotation speed is adjusted. The temperature of the outer peripheral portions of the plurality of substrates during the temperature increase is measured at each rotation angle of 120 degrees or less, and the positional deviation of the substrate relative to the support portion is determined based on the amount of change in the temperature of the outer peripheral portions of the plurality of substrates. Determine presence or absence.

  FIG. 1 is a schematic cross-sectional view of the vapor phase growth apparatus of this embodiment. The vapor phase growth apparatus of this embodiment is a vertical single-wafer type epitaxial growth apparatus that uses, for example, an MOCVD method (metal organic vapor phase growth method). In the epitaxial growth apparatus of this embodiment, for example, a single crystal film of a III-V group nitride semiconductor such as GaN (gallium nitride), AlN (aluminum nitride), AlGaN (aluminum gallium nitride), InGaN (indium gallium nitride), or the like. To grow.

  The vapor phase growth apparatus 100 includes a reaction furnace 2. The growth of the film is performed inside the reaction furnace 2. Inside the reaction furnace 2, a support unit 42 is disposed on which a wafer W (substrate) is placed and rotates the wafer W in the circumferential direction of the wafer W. The support portion 42 is connected to the rotation base 22 via the ring 28. Here, the wafer W is, for example, a Si (silicon) wafer or a sapphire wafer.

  The rotation base 22 is rotated by a rotation mechanism (not shown). As a result, the ring 28 is rotated. Therefore, the support part 42 connected to the ring 28 and the wafer W placed on the support part 42 rotate in the circumferential direction. In addition, the form of the rotation base 22, the ring 28, and the support part 42 is not limited to this. For example, a device in which the support portion 42, the ring 28, and the rotary base 22 are integrated can be used.

  The support part 42 includes a recess 44 in which the wafer is fixed. Here, the support part 42 may be provided with a hole 45 through which a pin 26 described later passes. Note that the mechanism for fixing the wafer W to the support portion 42 is not limited to the concave portion 44.

  The reaction furnace 2 has a wafer loading / unloading port (not shown). The wafer carry-in / out port is used for carrying the wafer W into the reaction furnace 2 and carrying the wafer W out of the reaction furnace 2. Here, for example, a hand (not shown) is used for loading and unloading the wafer W. For example, the wafer W carried by the hand is moved to the pins 26 inside the reaction furnace 2 and further supported by the recess 44. In addition, the method of carrying in / out the wafer W is not limited to this.

The gas supply unit 54 is disposed outside the reaction furnace 2 and connected to the reaction gas supply port 12. The gas supply unit 54 stores a raw material such as a reactive gas used for processing the film on the wafer W. For example, trimethylgallium (TMG), trimethylindium (TMI), trimethylaluminum (TMA), ammonia (NH ₃ ) gas, nitrogen (N ₂ ) gas, and hydrogen (H ₂ ) gas are stored.

  The reaction furnace 2 has a reaction gas supply port 12 and an exhaust port 14. The reaction gas is supplied into the reaction furnace 2 from the reaction gas supply port 12. The reaction gas supplied here is supplied onto the wafer W after passing through a shower plate 48 disposed inside the reaction furnace 2 and used for film growth, that is, film formation. The reaction gas that has not been used and the product generated by the film formation are exhausted from the exhaust port 14.

  A first heater 38 is disposed inside the reaction furnace 2. The first heater 38 is used for heating the wafer W. Further, a second heater 40 is disposed inside the reaction furnace 2. The second heater 40 is mainly used for heating the outer peripheral portion of the wafer W. This is because the temperature of the outer peripheral portion of the wafer W is lowered only by the first heater 38 and the film quality of the outer peripheral portion of the wafer W may be deteriorated.

  The first heater 38 and the second heater 40 are energized by the power source 58 and generate heat. Here, for example, the energization is performed using the booth bar 36 connected to each of the first heater 38 and the second heater 40, the base disk 34 connected to the booth bar 36, and the base disk 34 using the connecting portion 32. By the heater shaft 24 and the power source 58 connected to the heater shaft 24.

  The booth bar 36 is made of carbon coated with SiC, for example. The base disk 34 is made of, for example, quartz. Moreover, the connection part 32 consists of metals, such as molybdenum.

  The first thermometer 50 and the second thermometer 52 are arranged in the upper part of the reaction furnace 2. The first thermometer 50 measures the temperature at the center of the wafer W. The second thermometer 52 measures the temperature of the outer periphery of the wafer W. The first thermometer 50 and the second thermometer 52 are, for example, radiation thermometers.

  The control mechanism 56 includes a misregistration determination unit 60 and a vapor phase growth apparatus control unit 64 as its constituent elements. The control mechanism 56 is composed of, for example, a circuit board. Alternatively, a microprocessor centering on a CPU (Central Processing Unit), a ROM (Read Only Memory) for storing a processing program, a RAM (Random Access Memory) for temporarily storing data, an input / output port and a communication port Consists of.

  The control mechanism 56 is connected to the pin 26, the first thermometer 50, the second thermometer 52, the gas supply unit 54, the power source 58, the rotation mechanism, the hand, and the wafer carry-in / out port. The

  The vapor phase growth apparatus control unit 64 controls the raising and lowering of the pins 26, the temperature measurement of the wafer W by the first thermometer 50 and the second thermometer 52, the reaction gas from the gas supply unit 54 to the reaction furnace 2, and the like. Control of raw material supply, rotation of wafer W and rotation speed of wafer W by rotation mechanism, control of movement of wafer W by hand, control of opening / closing of wafer carry-in / out, and control of heating of heater by power source 58 Do it. Note that these controls may be based on the determination of a positional deviation determination unit 60 described later.

  The positional deviation determination unit 60 determines whether or not there is a positional deviation of the wafer W with respect to the support unit 42 based on the amount of change in the temperature of the outer peripheral part of the wafer W described later.

  FIG. 2 is a flowchart of the vapor phase growth method in the present embodiment. First, the vapor phase growth apparatus control unit 64 transports the wafer W from outside the reaction furnace 2 into the reaction furnace 2 using a hand (S10). Next, the vapor phase growth apparatus control unit 64 places the wafer W on the support unit 42 in the reaction furnace 2 (S12). Next, the vapor phase growth apparatus control unit 64 rotates the wafer W in the circumferential direction of the wafer W at a first rotation speed (predetermined rotation speed) (S14). Here, the first rotation speed is, for example, not less than 10 rpm and less than 150 rpm. Next, the vapor phase growth apparatus control unit 64 starts to raise the temperature of the wafer W rotating at the first rotation speed using either one or both of the first heater 38 and the second heater 40. (S16).

  Next, the vapor phase growth apparatus control unit 64 measures the temperatures of the outer peripheral portions of the plurality of wafers W being heated using, for example, the second thermometer 52 (S18). Here, the location of the wafer W measured using the second radiation thermometer 52 is, for example, about 90 mm away from the center in the case of an 8-inch wafer.

  Next, the positional deviation determination unit 60 determines the presence or absence of positional deviation of the wafer W with respect to the support unit 44 based on the amount of change in the temperature of the outer peripheral portions of the plurality of wafers W being heated. Here, the method for determining the presence / absence of positional deviation is not particularly limited. For example, the maximum value and the minimum value of the temperature change amount of the outer peripheral portion of the wafer W are calculated, and the difference between the maximum value and the minimum value is calculated ( S20), the determination can be made based on the criterion that the difference between the maximum value and the minimum value is within a predetermined range (S22). If the difference between the maximum value and the minimum value of the change amount is within a predetermined range, the positional deviation determination unit 60 determines that there is no positional deviation of the wafer W. On the other hand, if the difference between the maximum value and the minimum value of the change amount is not within the predetermined range, the positional deviation determination unit 60 determines that there is a positional deviation of the wafer W.

  If the difference between the maximum value and the minimum value of the change amount is within a predetermined range, the vapor phase growth apparatus control unit 64 stops the temperature increase of the wafer W (S24) and rotates the wafer at the second rotation speed. (S26). Here, the second rotation speed is, for example, not less than 100 rpm and not more than 3000 rpm (Please give me instructions). Next, the vapor phase growth apparatus control unit 64 introduces reaction gas from the reaction gas supply port 12 through the shower plate 48 onto the wafer W, and grows a film on the wafer W (S28). The reaction gas that has not been used and the product generated by the film formation are exhausted from the exhaust port 14.

  If the difference between the maximum value and the minimum value of the change amount is not within the predetermined range, the vapor phase growth apparatus control unit 64 stops the rotation of the wafer (S30).

  FIG. 3 is a schematic diagram illustrating a method for measuring the temperature of the outer peripheral portion of the substrate in the first embodiment.

The wafer W is rotated by the support unit 42. Therefore, the wafer W is rotated around the center O _h of the support portion 42 instead of the center O _{w of the} wafer W. Therefore, the rotation angle to be described later is measured based on the center O _h of the support portion 42 instead of the center O _{w of the} wafer W.

In the following description, it is assumed that the rotation speed of the wafer W when the temperature of the outer periphery of the wafer is measured is constant, and the time interval when the temperature is measured is constant. Further, the rotation direction of the wafer W is assumed to be clockwise in the plane of FIG. In FIG. 3A, the rotation speed [min ⁻¹ ] of the wafer W is 50 rpm (rpm: rotation per minute), and the temperature of the wafer W is measured once every 0.2 seconds. Then, since it takes 1.2 seconds for one rotation of the wafer W, the temperature measurement of the outer peripheral portion of the wafer W per one rotation is performed six times. Therefore, if t ₁ = 10.2 seconds, t ₂ = 10.4 seconds, t ₃ = 10.6 seconds, t ₄ = 10.8 seconds, t ₅ = 11.0 seconds, t ₆ = 11.2. Seconds, t ₇ = 11.4 seconds. In this case, measurement points in the measurement point 46a is _{t 1,} the measurement point 46b is measurement points in _{t 2} seconds, the measurement point 46c is measurement point at _{t 3} seconds, measurement points 46d are measurement points in _{t 4} seconds, measurement points 46e are measurement points in _{t 5} seconds, the measurement portions 46f measurement points at _{t 6,} the measurement point 46g is a measurement point at _{t 7.} Since the temperature of the outer peripheral portion of the wafer W per one rotation is measured six times, the temperature of the outer peripheral portion of the substrate is measured every rotation angle of 60 degrees which is a quotient obtained by dividing 360 degrees by six. Note that the measurement location 46g and the measurement location 46a are ideally coincident, but may not coincide.

In FIG. 3B, the rotation speed [min ⁻¹ ] of the wafer W is 50 rpm, and the temperature of the wafer W is measured once every 0.6 seconds. Then, since it takes 1.2 seconds for the wafer W to make one rotation, the temperature measurement of the outer peripheral portion of the wafer W per one rotation is performed twice. Therefore, when t ₃₁ = 10.2 seconds, t ₃₂ = 10.8 seconds and t ₃₃ = 11.4 seconds. At this time, the temperature of the outer peripheral portion of the wafer W is measured every rotation angle of 180 degrees.

In FIG. 3C, the rotation speed [min ⁻¹ ] of the wafer W is 50 rpm, and the temperature of the wafer W is measured once every 1.4 seconds. Then, t ₅₁ = 10.2 seconds and t ₅₂ = 11.6 seconds. At this time, the temperature of the outer periphery of the wafer W is measured after the wafer W is rotated by 480 degrees. Here, when the rotation angle of the wafer W exceeds 360 degrees, the rotation angle is obtained by subtracting an angle of 360 degrees or an integral multiple thereof so that the difference is 360 degrees or less. In the case of FIG. 3C, 480 ° -360 ° × 1 = 120 °, so the rotation angle is 120 degrees.

  When the rotation direction of the wafer W is counterclockwise, the rotation angle in the counterclockwise direction is set as a positive rotation angle.

  It is preferable that the temperature of the outer peripheral part of the several wafer W is measured for every rotation angle of 45 to 120 degree | times. If it exceeds 120 degrees, the number of temperature data is too small, and it becomes difficult to determine the presence or absence of positional deviation. On the other hand, if it is less than 45 degrees, the number of temperature data is large and the amount of calculation increases, so it is difficult to obtain the amount of change. The rotation angle at which the presence / absence of misalignment is correctly determined and the amount of calculation is not too large is 51.4 degrees or more and 90 degrees or less.

  Alternatively, the temperature of the outer periphery of the wafer W per rotation of the wafer W may be measured 3 times or more and 8 times or less. If it is less than 3 times, the number of temperature data is too small and it is difficult to determine the presence or absence of positional deviation. On the other hand, if it exceeds 8, the number of temperature data is large and the amount of calculation increases, making it difficult to determine the amount of change. The number of measurements that correctly determines the presence or absence of misalignment and does not increase the amount of calculation is 4 to 7 times.

  Furthermore, it is preferable to obtain the maximum value and the minimum value of the change amount using the temperature measured within 10 revolutions from the immediately preceding 1 revolution. If the number of rotations is too small, the temperature at which the amount of change is small may be measured depending on the rotation angle or position to be measured, making it difficult to accurately determine the positional deviation. On the other hand, if the number of revolutions is too large, the maximum and minimum values of the amount of change will be obtained using the temperature data well before that point in time, making it difficult to accurately determine the positional deviation at that point. Become. More preferably, it is preferable to obtain the maximum value and the minimum value of the change amount by using the temperature measured within 5 revolutions from the previous 2 revolutions.

  FIG. 4 is an explanatory diagram of the operation in the present embodiment.

  FIG. 4A is a view when there is no positional deviation of the wafer W with respect to the support portion 42, and FIG. 4E is a view when there is a positional displacement of the wafer W with respect to the support portion 42.

  The temperature of the outer peripheral portion of the wafer W being heated, measured at regular time intervals, is shown in FIG. 4B for the case of FIG. 4A and FIG. 4 for the case of FIG. Each is shown in (f). In any case, the temperature of the outer periphery of the wafer W per rotation of the wafer W is measured six times. That is, the temperature of the outer peripheral portion of the wafer W is measured at every rotation angle of 60 degrees.

4 (c) and 4 (g) are diagrams showing the amount of change in the temperature of the outer peripheral portion of the wafer W in each of the cases of FIGS. 4 (b) and 4 (e). For example the amount of change in the temperature of the wafer W peripheral portion at t ₄ is calculated by subtracting the temperature of the wafer W peripheral portion of t ₃ from the temperature of the wafer W peripheral portion at t _4. Incidentally, it subtracted the temperature of the wafer outer peripheral portion at t ₁ from the temperature of the wafer W peripheral portion at t _4, may be the difference as the variation of the temperature of the wafer W peripheral portion at t _4. However, in order to evaluate the positional deviation of the wafer W in detail, it is preferable to obtain the above change amount at the temperature measured at the time immediately before, for example, t ₂ and t ₁ .

4D and 4H show the maximum value of the change amount of the temperature at the outer peripheral portion of the wafer W, the minimum value of the change amount of the temperature of the outer peripheral portion of the wafer W, the maximum value and the minimum value of the change amount. It is a figure which shows a difference, respectively. Here, the maximum value and the minimum value of the amount of change are obtained using the temperatures measured within the immediately preceding three revolutions. For example, the maximum value and the minimum value change amount of the t ₁₉ is determined using the measured temperature in 18 points from t ₂ t _19. The maximum value and the minimum value change amount of the t ₂₀ is determined using the measured temperature in the 18 point t ₂₀ from t _3. Incidentally, from _{t 1} in FIG. 4 but plots the temperature of up to _{t 20, t 1} also in the previous time and _{t 20} after the time, the temperature of the wafer outer peripheral portion is the same as from _{t 1} to _{t 20} It was assumed that there was a change.

  In FIG. 4 (d), the maximum value and the minimum value of the amount of change are small and equal, respectively. In such an ideal case, the difference between the maximum value and the minimum value of the change amount is zero. On the other hand, in FIG. 4 (h), the absolute value of the maximum value and the minimum value of the change amount are greatly different from each other. For this reason, the difference between the maximum value and the minimum value of the change amount is finite. Thus, based on the difference between the maximum value and the minimum value of the temperature change amount at the outer peripheral portion of the wafer W, it is possible to determine whether or not there is a positional deviation with respect to the support portion of the substrate.

  Note that the above description does not limit the method for determining the positional deviation of the wafer W with respect to the support portion 42. In the present embodiment, depending on the process of increasing the temperature of the wafer W, the process of decreasing the temperature of the wafer W, the material of the wafer W, the material of the material to be deposited, etc. Even if it exists, it can be used appropriately.

  Hereinafter, the operation and effect of the present embodiment will be described.

  During the temperature increase of the wafer W, the temperature change due to the positional deviation of the wafer W with respect to the support portion 42 is difficult to observe due to the temperature change accompanying the temperature increase of the wafer W.

  In contrast, as in this embodiment, based on the maximum and minimum values of the change in the temperature at the outer periphery of the wafer W, particularly the maximum and minimum values of the change in the temperature at the outer periphery of the wafer W, the temperature of the wafer W is being increased. However, it is possible to easily determine whether or not the wafer W is displaced relative to the support portion 42.

  As described above, according to the vapor phase growth and vapor phase growth apparatus of the present embodiment, the displacement of the substrate from the support portion due to the deformation of the substrate accompanying the temperature rise of the substrate is detected during the temperature rise. It is possible to provide a vapor phase growth method and a vapor phase growth apparatus that can be used.

(Second Embodiment)
The vapor phase growth method of the present embodiment is different from the first embodiment in that the temperature of the wafer W (substrate) is lowered. That is, in the vapor phase growth method of the present embodiment, the substrate is placed on the support in the reaction furnace, the substrate is rotated at a predetermined rotation speed in the circumferential direction of the substrate, and the substrate being rotated at the predetermined rotation speed is measured. The temperature of the outer periphery of the plurality of substrates during the temperature decrease is measured for each rotation angle of 120 degrees or less, and the position shift relative to the support portion of the substrate is measured based on the amount of change in the temperature of the outer periphery of the plurality of substrates. Determine presence or absence. Note that the description overlapping with the first embodiment is omitted.

  FIG. 5 is a flowchart of the vapor phase growth method in the present embodiment. First, the vapor phase growth apparatus control unit 64 places the wafer W on the support unit 42 in the reaction furnace 2 (S48). Next, the vapor phase growth apparatus control unit 64 rotates the wafer W in the circumferential direction of the wafer W at the second rotation speed (S50). Next, the vapor phase growth apparatus controller 64 introduces the reaction gas from the reaction gas supply port 12 through the shower plate 48 onto the wafer W, and grows a film on the wafer W (S52). The reaction gas that has not been used and the product generated by the film formation are exhausted from the exhaust port 14. Note that S48, S50, and S52 are the same steps as S12, S26, and S28 of the first embodiment, respectively.

  When the film growth is completed, the vapor phase growth apparatus controller 64 rotates the wafer W at the first rotation speed (S54). Next, the vapor phase growth apparatus control unit 64 starts to lower the temperature of the rotating wafer W at the first rotation speed (S56).

  Next, the vapor phase growth apparatus control unit 64 measures the temperatures of the outer peripheral portions of the plurality of wafers W during temperature reduction using, for example, a second thermometer (S58).

  Next, the positional deviation determination unit 60 determines the presence or absence of positional deviation of the wafer W with respect to the support unit 44 based on the amount of change in the temperature of the outer peripheral portions of the plurality of wafers W during the temperature decrease. Here, the method for determining the presence / absence of positional deviation is not particularly limited. For example, the maximum value and the minimum value of the temperature change amount of the outer peripheral portion of the wafer W are calculated, and the difference between the maximum value and the minimum value is calculated ( In S60), the determination can be made based on the criterion that the difference between the maximum value and the minimum value is within a predetermined range (S62). If the difference between the maximum value and the minimum value of the change amount is within a predetermined range, the positional deviation determination unit 60 determines that there is no positional deviation of the wafer W. On the other hand, if the difference between the maximum value and the minimum value of the change amount is not within the predetermined range, the positional deviation determination unit 60 determines that there is a positional deviation of the wafer W.

If the difference between the maximum value and the minimum value of the change amount is within a predetermined range, the vapor phase growth apparatus control unit 64 stops the temperature drop of the wafer W (S64), and rotates the wafer at the second rotation speed (S66). ). Next, the vapor phase growth apparatus controller 64 introduces the reaction gas from the reaction gas supply port 12 through the shower plate 48 onto the wafer W, and grows a film on the wafer W (S68). The reaction gas that has not been used and the product generated by the film formation are exhausted from the exhaust port 14.

  If the difference between the maximum value and the minimum value of the change amount is not within the predetermined range, the vapor phase growth apparatus control unit 64 stops the rotation of the wafer (S70).

  FIG. 6 is an explanatory diagram of the operation in the present embodiment.

  FIG. 6A is a view when there is no positional shift of the wafer W with respect to the support portion 42, and FIG. 6E is a view when there is a positional shift of the wafer W with respect to the support portion 42.

  The temperature of the outer peripheral portion of the wafer W being cooled, measured at regular time intervals, is shown in FIG. 6 (b) for the case of FIG. 6 (a) and in FIG. 6 (b) for the case of FIG. 6 (e). Each of them is shown in f). In any case, the temperature of the outer periphery of the wafer W per rotation of the wafer W is measured six times. That is, the temperature of the outer peripheral portion of the wafer W is measured at every rotation angle of 60 degrees.

FIGS. 6C and 6G are diagrams showing the amount of change in the temperature of the outer periphery of the wafer W in each of FIGS. 6B and 6E. For example the amount of change in temperature of the wafer W peripheral portion at t ₄ is calculated by subtracting the temperature of the wafer W peripheral portion of t ₃ from the temperature of the wafer W peripheral portion at t _4.

6D and 6H show the maximum value of the change amount of the temperature at the outer peripheral portion of the wafer W, the minimum value of the change amount of the temperature of the outer peripheral portion of the wafer W, the maximum value and the minimum value of the change amount. It is a figure which shows a difference, respectively. Here, the maximum value and the minimum value of the amount of change are obtained using the temperatures measured within the immediately preceding three revolutions. For example, the maximum value and the minimum value change amount of the t ₁₉ is determined using the measured temperature in 18 points from t ₂ t _19. The maximum value and the minimum value change amount of the t ₂₀ is determined using the measured temperature in the 18 point t ₂₀ from t _3. Incidentally, from _{t 1} in FIG. 6 but plots the temperature of up to _{t 20, t 1} also in the previous time and _{t 20} after the time, the temperature of the wafer outer peripheral portion is the same as from _{t 1} to _{t 20} It was assumed that there was a change.

  In FIG. 6D, the maximum value and the minimum value of the amount of change are small and equal, respectively. In such an ideal case, the difference between the maximum value and the minimum value of the change amount is zero. On the other hand, in FIG. 6H, the absolute value of the maximum value and the minimum value of the change amount are greatly different from each other. For this reason, the difference between the maximum value and the minimum value of the change amount is finite. Thus, based on the difference between the maximum value and the minimum value of the temperature change amount at the outer peripheral portion of the wafer W, it is possible to determine whether or not there is a positional deviation with respect to the support portion of the substrate.

  Note that the above description does not limit the method for determining the positional deviation of the wafer W with respect to the support portion 42. In the present embodiment, depending on the process of increasing the temperature of the wafer W, the process of decreasing the temperature of the wafer W, the material of the wafer W, the material of the material to be deposited, etc. Even if it exists, it can be used appropriately.

  As described above, according to the vapor phase growth and vapor phase growth apparatus of the present embodiment, it is possible to detect the positional deviation of the substrate from the support portion due to the deformation of the substrate accompanying the temperature drop of the substrate during the temperature drop. It is possible to provide a vapor phase growth method and a vapor phase growth apparatus.

  The embodiments of the present invention have been described above with reference to specific examples. The above embodiment is merely given as an example and does not limit the present invention. Moreover, you may combine the component of each embodiment suitably.

  In the present embodiment, a vertical single-wafer epitaxial apparatus for forming a film for each wafer has been described as an example. However, the vapor phase growth apparatus is not limited to a single-wafer epitaxial apparatus. The present invention can be applied to any vapor phase growth apparatus that grows a film by rotating a wafer.

  In the embodiments, description of the apparatus configuration, the manufacturing method, and the like that are not directly required for the description of the present invention is omitted, but the required apparatus configuration, the manufacturing method, and the like can be appropriately selected and used. In addition, all vapor phase growth apparatuses and vapor phase growth methods that include elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention. The scope of the present invention is defined by the appended claims and equivalents thereof.

2 Reactor 12 Reactant gas supply port 14 Exhaust port 20 Base plate 22 Rotating base 24 Heater shaft 26 Pin 28 Ring 32 Connecting portion 34 Base disk 36 Booth bar 38 First heater 40 Second heater 42 Supporting portion 44 Recess 45 Hole 46 Measurement Location 48 Shower plate 50 First thermometer 52 Second thermometer 54 Gas supply unit 56 Control mechanism 58 Power source 60 Position shift determination unit 64 Vapor growth apparatus control unit 100 Vapor growth apparatus W Wafer (substrate)

Claims (5)

Place the substrate on the support in the reactor,
Rotating the substrate at a predetermined rotational speed in the circumferential direction of the substrate;
Raising or lowering the temperature of the substrate rotating at the predetermined rotation speed;
Measuring the temperature of the outer peripheral portion of the plurality of substrates during the temperature increase or temperature decrease for each rotation angle of 120 degrees or less,
A vapor phase growth method comprising: determining whether or not the substrate is misaligned with respect to the support portion based on a change in temperature of the outer peripheral portions of the plurality of substrates.   The vapor phase growth method according to claim 1, wherein presence / absence of a positional shift of the substrate with respect to the support portion is determined based on a difference between a maximum value and a minimum value of a change in temperature of the outer peripheral portion of the substrate.   3. The vapor phase growth method according to claim 2, wherein the maximum value and the minimum value of the change amount of the temperature of the outer peripheral portion of the substrate are obtained by using the temperature measured within a predetermined rotation speed immediately before.   4. The vapor phase growth method according to claim 1, wherein the rotation angle is 45 degrees or more. A reactor,
A support unit disposed in the reaction furnace, on which the substrate is placed and rotates the substrate in a circumferential direction of the substrate;
A thermometer for measuring the temperature of the outer periphery of the substrate;
A misregistration determination unit that determines the presence or absence of misregistration of the substrate with respect to the support unit based on a change in temperature of the outer peripheral portion of the substrate;
A vapor phase growth apparatus comprising:

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