JP2016065797A - High frequency amplification device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency amplification device capable of reducing in size and improving reliability of failure detection.SOLUTION: A high frequency amplification device 1 comprises: an amplifier circuit 3 including an amplifier 2 amplifying high-frequency power; a driving circuit 4 supplying a driving voltage to the amplifier 2; and a failure detection circuit 5 provided so as to be electrically shielded from the amplifier circuit 3 and the driving circuit 4. The failure detection circuit 5 comprises: a first temperature sensor 11 being disposed at a position where being thermally connected to the amplifier 2 and detecting a temperature of the amplifier; and a determination circuit 10 being electrically connected to the first temperature sensor 11 and determining failure of the amplifier 2 on the basis of a first detection temperature obtained by the first temperature sensor 11.SELECTED DRAWING: Figure 1

Description

  Embodiments described herein relate generally to a high-frequency amplification device.

  Generally, a high-frequency amplification device is configured by mounting an amplification circuit including a high-frequency semiconductor amplification element such as an FET (hereinafter simply referred to as an amplification element). In addition, a drive circuit that supplies a drive voltage to the amplification element, a failure detection circuit that detects a failure of the amplifier, and the like are mounted in the high-frequency amplification device together with the amplification circuit.

  As a failure detection circuit, connect to an amplifier circuit, detect a high-frequency output level from the amplifier element to determine the failure of the amplifier element, or connect to a drive circuit to detect and amplify the current supplied to the amplifier element A circuit for determining an element failure is known.

  However, since these failure detection circuits are electrically connected to the amplifier circuit or the drive circuit and disposed inside the high-frequency amplification device, a space for disposing the failure detection circuit is required. As a result, there is a problem that the case must be enlarged and it is difficult to reduce the size of the high-frequency amplifier.

  Further, since any of the failure detection circuits described above is electrically connected to the amplifier circuit or the drive circuit, it is extremely difficult to electrically shield the failure detection circuit from the amplifier circuit and the drive circuit. As a result, the failure detection circuit may malfunction and erroneously detect the failure of the amplifier, and there is a problem that the reliability of failure detection is low.

JP 2006-214840 A JP 2002-107415 A

  An object of the embodiment is to provide a high-frequency amplifier that can be reduced in size and can improve the reliability of failure detection.

  The high-frequency amplifier according to the embodiment is electrically shielded from an amplifier circuit including an amplifier that amplifies high-frequency power, a drive circuit that supplies a drive voltage to the amplifier, and the amplifier circuit and the drive circuit. A fault detection circuit provided. The failure detection circuit is disposed at a position thermally connected to the amplifier, and is electrically connected to the first temperature sensor that detects the temperature of the amplifier, and the first temperature sensor. A determination circuit for determining failure of the amplifier based on a first detected temperature obtained by the temperature sensor.

It is a typical circuit diagram for demonstrating the basic concept of the high frequency amplifier which concerns on embodiment. 1 is a cross-sectional view showing a high-frequency amplification device according to a first embodiment. It is sectional drawing which shows the high frequency amplifier which concerns on the modification of 1st Embodiment. It is a block diagram which shows typically the failure detection circuit of the high frequency amplifier which concerns on 1st Embodiment. It is a block diagram showing typically a modification of a failure detection circuit of a high frequency amplification device concerning a 1st embodiment. It is a figure for demonstrating the failure determination operation | movement by the high frequency amplifier which concerns on 1st Embodiment. It is a block diagram which shows typically the failure detection circuit of the high frequency amplifier which concerns on 2nd Embodiment. It is a block diagram which shows typically the modification of the failure detection circuit of the high frequency amplifier which concerns on 2nd Embodiment. It is a figure for demonstrating the failure determination operation | movement by the high frequency amplifier which concerns on 2nd Embodiment. It is sectional drawing which shows the high frequency amplifier which concerns on 3rd Embodiment. It is a block diagram which shows typically the failure detection circuit of the high frequency amplifier which concerns on 3rd Embodiment. It is a block diagram which shows typically the modification of the failure detection circuit of the high frequency amplifier which concerns on 3rd Embodiment. It is a figure for demonstrating the failure determination operation | movement by the high frequency amplifier which concerns on 3rd Embodiment. It is a block diagram which shows typically the failure detection circuit of the high frequency amplifier which concerns on 4th Embodiment. It is a block diagram which shows typically the modification of the failure detection circuit of the high frequency amplifier which concerns on 4th Embodiment. It is a figure for demonstrating the failure determination operation | movement by the high frequency amplifier which concerns on 4th Embodiment.

  Hereinafter, a high-frequency amplification device according to an embodiment will be described in detail with reference to the drawings.

  FIG. 1 is a schematic circuit diagram for explaining the basic concept of the high-frequency amplification device according to the embodiment. The high-frequency amplifier 1 shown in FIG. 1 can detect a failure of the amplifier 2 based on the temperature of the amplifier 2. This will be described below.

  As shown in FIG. 1, the high-frequency amplification device 1 according to the embodiment includes an amplification circuit 3, a drive circuit 4, and a failure detection circuit 5.

  The amplifier circuit 3 includes an amplifier 2. The input terminal of the amplifier 2 is electrically connected to the RF input terminal 6 to which a high frequency (RF) is supplied from the outside of the high frequency amplifier 1, and the output terminal of the amplifier 2 is external to the high frequency amplifier 1. Are electrically connected to an RF output terminal 7 for outputting RF.

  In such an amplifier circuit 3, capacitors 8a and 8b are disposed between the RF input terminal 6 and the input terminal of the amplifier 2 and between the RF output terminal 7 and the output terminal of the amplifier 2, respectively. . These capacitors 8a and 8b are DC cut capacitors.

  The drive circuit 4 is a circuit that supplies a drive voltage to the amplifier 2. When the amplifier 2 is a field effect transistor (FET), the drive circuit 4 is a bias supply circuit configured by a first bias supply circuit 4a and a second bias supply circuit 4b.

  The first bias supply circuit 4a electrically connects the first voltage source 9a, which is a supply source of the gate-source bias voltage Fgs, and the amplifier 2. The second bias supply circuit 4b electrically connects the second voltage source 9b, which is a supply source of the drain / source bias voltage Fds, and the amplifier 2.

  The first bias supply circuit 4a and the second bias supply circuit 4b are connected to the other ends of capacitors 8c and 8d each having one end grounded. These capacitors 8c and 8d are capacitors for separating a radio frequency (RF) and a DC circuit.

  The failure detection circuit 5 is disposed in the vicinity of the amplifier circuit 3. The failure detection circuit 5 is electrically shielded from the amplification circuit 3 (so as not to be electrically connected to the amplification circuit 3) in order to suppress erroneous detection of failure of the amplifier 2 due to malfunction of the circuit 5. ) Is provided. The failure detection circuit 5 includes a first temperature sensor 11 and a determination circuit 10.

  The first temperature sensor 11 detects the temperature of the amplifier 2. The first temperature sensor 11 is disposed at a position where the temperature of the amplifier 2 can be detected (a position where it is thermally connected to the amplifier 2), and periodically detects the temperature of the amplifier 2, for example.

  The determination circuit 10 is connected to the first temperature sensor 11 and is a circuit that determines a failure of the amplifier 2 based on the first detected temperature obtained from the sensor 11.

  In the high-frequency amplification device 1 described above, when a bias voltage is supplied from the first and second voltage sources 9a and 9b to the amplifier 2 via the bias supply circuit that is the drive circuit 4, the amplifier 2 has RF power. Can be amplified. When RF is input to the amplifier 2 in this state via the RF input terminal 6, the RF is amplified and output. The RF output from the amplifier 2 is output from the RF output terminal 7 to the outside of the high frequency amplification device 1.

  When the amplifier 2 is driven in this way, the amplifier 2 generates heat. If the amplifier 2 is operating normally, the amplifier 2 has a temperature within a predetermined range (a temperature within the normal temperature range). If the amplifier 2 has an abnormality or has failed, the amplifier 2 This temperature is outside the predetermined range (temperature within the abnormal temperature range). Therefore, when the first temperature sensor 11 of the failure detection circuit 5 periodically detects the temperature of the amplifier 2 and obtains the first detection temperature, the obtained first detection temperature is sent to the determination circuit 10. It is done. The determination circuit 10 determines the failure of the amplifier 2 by determining whether the first detected temperature is a temperature within the normal temperature range or a temperature within the abnormal temperature range.

  Hereinafter, a specific configuration of such a high-frequency amplification device 1 will be described as an embodiment with reference to the drawings.

<First Embodiment>
FIG. 2 is a cross-sectional view showing the high-frequency amplification device 20 according to the first embodiment. The high-frequency amplifier 20 shown in FIG. 2 is configured by mounting an amplifier circuit 22, a drive circuit 23, and a failure detection circuit 24 inside a case 21.

  The case 21 has a metal base 25 that is grounded by a desired means. A first recess 25a in which the amplifier circuit 22 is disposed is provided on the surface of the base 25, and a second recess 25b in which the drive circuit 23 is disposed is provided on the back of the base 25.

  The case 21 has a flat plate-like first metal lid 26a provided on the first concave portion 25a of the base body 25 having such a shape and a flat plate-like shape provided on the second concave portion 25b of the base body 25. Second metal lid 26b. In the case 21, a first space 27a is formed by the first recess 25a and the first metal lid 26a of the base 25, and a second space 27b is formed by the second recess 25b and the second metal lid 26b of the base 25. Form.

  Although not shown, the base body 25 is provided with a through hole that communicates the bottom surface of the first recess 25a and the bottom surface of the second recess 25b. The amplifier circuit 22 and the drive circuit 23 are: It is electrically connected through this through hole.

  The amplifier circuit 22 includes a plurality of amplifiers 29a, 29b, and 29c disposed on the surface of the substrate 28. Each of the plurality of amplifiers 29a to 29c is a high-frequency semiconductor amplifying element such as an FET that amplifies RF power, for example. The plurality of amplifiers 29 a to 29 c are connected in series by wiring (not shown) provided on the substrate 28. Such an amplifier circuit 22 is disposed in the first space 27 a of the case 21. The input terminal of the first stage amplifier 29 a is connected to the RF input terminal 30 of the case 21. Further, the output terminal of the final stage amplifier 29 c is connected to the RF output terminal 31 of the case 21.

  The amplifier circuit 22 also includes a plurality of DC cut capacitors 8a and 8b as described with reference to FIG. Although not shown, a capacitor between the RF input terminal 30 of the case 21 and the input terminal of the first-stage amplifier 29a, and between the RF output terminal 31 of the case 21 and the output terminal of the last-stage amplifier 29c are shown. Each of the capacitors is provided on a substrate 28 that is disposed in, for example, the first space 27a and on which a plurality of amplifiers 29a to 29c are disposed.

  The drive circuit 23 that supplies a drive voltage to each of the plurality of amplifiers 29a to 29c is a bias supply configured by a first bias supply circuit (not shown) and a second bias supply circuit (not shown). Circuit. The first bias supply circuit is a supply source of the gate-source bias voltage Fgs, and includes a first voltage source (not shown) arranged outside the device 20, and each of the amplifiers 29a to 29c. Connect electrically. The second bias supply circuit is a supply source of the drain-source bias voltage Fds, a second voltage source (not shown) arranged outside the device 20, and each of the amplifiers 29a to 29c. , Connect electrically.

  The case 21 is provided with a power supply control connector 32 that can be connected to first and second voltage sources (not shown) arranged outside the case 21. The bias supply circuits (not shown) are electrically connected to the first and second voltage sources by being electrically connected to the power supply control connector 32, respectively.

  Each of such first and second bias supply circuits is provided on the power supply control board 33 disposed in the second space 27b.

  Note that the first and second bias supply circuits include a plurality of capacitors 8c and 8d for separating the radio frequency (RF) and the DC circuit as described with reference to FIG. Although not shown, the capacitor connected to the first bias supply circuit and the capacitor connected to the second bias supply circuit are each provided, for example, on the power supply control board 33.

  The failure detection circuit 24 is disposed in the second space 27b of the case 21. Since the case 21 is grounded, by disposing the failure detection circuit 24 in the second space 27b, the circuit 24 is electrically shielded from the amplifier circuit 22 disposed in the first space 27a. The

  Further, a part of the failure detection circuit 24 (a determination circuit 36 to be described later) is provided on the power control board 33, but is electrically shielded from the first and second bias supply circuits (drive circuit 23). Is provided.

  Note that the failure detection circuit 24 ′ may be disposed in the first space 27 a as shown in FIG. 3 of the high-frequency amplification device 20 ′ according to the modification. However, in this case, it is necessary to cover the entire circuit 24 ′ with the electromagnetic shield 34 ′, which is more expensive than the high-frequency amplification device 20 shown in FIG.

  On the other hand, in the high frequency amplifying apparatus 20 shown in FIG. 2, since the failure detection circuit 24 is disposed in the second space 27b that is electrically shielded from the amplification circuit 22, the entire circuit 24 is electromagnetically shielded. It is not necessary to cover with a high-frequency amplifier 20 'shown in FIG.

  Please refer to FIG. The first temperature sensor 35 of the failure detection circuit 24 is disposed in contact with the base body 25 in the second space 27b. By arranging the first temperature sensor 35 in this way, the first temperature sensor 35 can detect the temperatures of the amplifiers 29 a to 29 c through the base body 25. That is, the first temperature sensor 35 is disposed at a position where it is thermally connected to any one of the amplifiers 29a to 29c. As such a first temperature sensor 35, a temperature sensor capable of direct measurement such as a thermistor or a thermocouple is preferably applied, but a temperature sensor capable of indirect measurement such as an infrared detector is used. Even can be applied.

  When the amplifier circuit 22 is configured by connecting a plurality of amplifiers 29a to 29c in series, the first temperature sensor 35 is preferably disposed at a position corresponding to a position immediately below the final stage amplifier 29c. . This is because by disposing the first temperature sensor 35 at this position, it is possible to detect not only the failure of the final-stage amplifier 29c but also the failure of the amplifiers 29a and 29b before the final stage. The reason for this will be described below.

  As will be described later, the failure detection circuit 24 detects a temperature change of the amplifiers 29a to 29c and determines a failure of the amplifiers 29a to 29c based on this temperature change. When the first temperature sensor 35 is disposed at a position corresponding to a position immediately below the last-stage amplifier 29c, a temperature change of the last-stage amplifier 29c can be detected, so that the failure determination of the last-stage amplifier 29c is performed. Can do.

  On the other hand, when the amplifiers 29a and 29b before the final stage fail, the RF does not reach the amplifier 29c after the failed amplifiers 29a and 29b. That is, when the amplifiers 29a and 29b in the previous stage fail, the RF amplifier operation is not performed in the final stage amplifier 29c, and the temperature of the final stage amplifier 29c decreases. As described above, even if the amplifiers 29a and 29b in the previous stage are in failure, the temperature of the amplifier 29c in the final stage changes, so that the first temperature sensor 35 corresponds to directly below the amplifier 29c in the final stage. By arranging at the position, not only the failure determination of the amplifier 29c at the final stage but also the failure determination of the amplifiers 29a and 29b before the final stage can be performed.

  The determination circuit 36 connected to the first temperature sensor 35 is arranged on the power supply control board 33 in the second space 27b. The determination circuit 36 is operated by electric power supplied from the outside of the case 21 via the power supply control board 33.

  FIG. 4 is a block diagram schematically showing the failure detection circuit 24. As shown in FIG. 4, the failure detection circuit 24 includes a first temperature sensor 35 and a determination circuit 36, and the determination circuit 36 includes a determination unit 37 that performs failure determination of the amplifiers 29 a to 29 c, a storage unit 38, and A warning control unit 39;

  The determination unit 37 receives the first detected temperature detected by the first temperature sensor 35, and performs failure determination of the amplifiers 29a to 29c based on the received first detected temperature. Further, the determination unit 37 outputs the determination result to the warning control unit 39.

  The storage unit 38 stores a first threshold temperature used as a criterion for failure determination in the determination unit 37.

  The warning control unit 39 controls the unit 100 by sending a control signal to the failure warning unit 100 based on the determination result by the determination unit 37. When the failure warning unit 100 is an alarm output unit that outputs an alarm sound, the warning control unit 39 controls the alarm output unit to output an alarm sound. Further, when the failure warning means 100 is a display unit such as a character or a lamp, the warning control unit 39 controls the display unit to display a specific character string or turn on the lamp. It is also possible to output failure information.

  In the high frequency amplifier 20 described above, when a bias voltage is supplied from the first and second voltage sources to the amplifiers 29a to 29c via the bias supply circuit which is the drive circuit 23, the amplifiers 29a to 29c are RF The power can be amplified. When RF is input to the amplifiers 29a to 29c in this state via the RF input terminal 30, the RF is amplified and output. The RF output from the final-stage amplifier 29 c is output from the RF output terminal 31 to the outside of the high-frequency amplifier 20.

  When the amplifiers 29a to 29c are driven in this way, the amplifiers 29a to 29c generate heat. If the amplifiers 29a to 29c are operating normally, the amplifiers 29a to 29c have a temperature within the normal temperature range, but if the amplifiers 29a to 29c are abnormal or the amplifiers 29a to 29c are out of order, the amplifier 29a The temperature of ˜29c is a temperature within the abnormal temperature range.

  Therefore, first, the first temperature sensor 35 of the failure detection circuit 24 periodically detects the temperature of the amplifier 29c, for example, and acquires the first detected temperature. The acquired first detected temperature is sent to the determination unit 37 of the determination circuit 36. When the determination unit 37 receives the first detected temperature, the determination unit 37 reads the first threshold temperature from the storage unit 38. Thereafter, the determination unit 37 compares the first detected temperature with the first threshold temperature to determine whether the first detected temperature is a temperature within the normal temperature range or a temperature within the abnormal temperature range. It is determined whether or not there is a failure and the failure of the amplifier 29c is determined. The determination result is sent to the warning control unit 39, and the warning control unit 39 transmits a control signal based on the determination result to control the failure warning means 100. The specific failure determination operation by the determination circuit 36 will be described later.

  As shown in a modification in FIG. 5, the determination circuit 36 ′ further includes amplifiers 29 a to 29 c based on the determination result by the determination unit 37 in addition to the determination unit 37, the storage unit 38, and the warning control unit 39. You may have the power supply control part 40 'which controls the 1st, 2nd voltage source 101 which supplies a bias voltage.

  When such a determination circuit 36 ′ is included, the determination result of the failure of the amplifier 29 c by the determination unit 37 is sent to the warning control unit 39 and the power supply control unit 40 ′. The warning control unit 39 controls the failure warning means 100 by transmitting a control signal based on the determination result. Then, the power supply control unit 40 ′ transmits a control signal based on the determination result, and turns off the voltage supply of the first and second voltage sources 101 for driving the amplifiers 29a to 29c, for example. To control.

  Next, an example of the failure determination operation by the high frequency amplification device 20 described above will be described with reference to FIG. FIG. 6 is a diagram for explaining a failure determination operation by the high-frequency amplification device according to the first embodiment. In the figure, the horizontal axis indicates time, and the vertical axis indicates the temperature detected by the first temperature sensor.

  As shown in FIG. 6, when a bias voltage is supplied to the amplifiers 29a to 29c at time t0 and RF is input to the amplifiers 29a to 29c via the RF input terminal 30, the amplifiers 29a to 29c perform an RF power amplification operation. Start and generate heat. Therefore, the temperature of the amplifiers 29a to 29c increases.

  When the temperature of the amplifiers 29a to 29c rises and the temperature of the amplifier 29c closest to the first temperature sensor 35 reaches the first threshold temperature T1 at time t1 and reaches a temperature in the normal temperature region, the determination circuit 36 The failure determination of the amplifiers 29a to 29c is started.

  Even after the failure determination is started, the amplifiers 29a to 29c continue to perform the amplification operation. When the steady state is reached at time t2, the temperature does not increase any more and the amplification operation is continued while maintaining a constant temperature.

  Here, for example, it is assumed that at least one of the amplifiers 29a to 29c fails at time t3, and the amplification operation is not performed. In this case, after time t3, the temperature of the amplifier 29c decreases, and at time t4, the temperature of the amplifier 29c reaches the first threshold temperature T1 and becomes a temperature in the abnormal temperature region. As described above, when the temperature of the amplifier 29c is changed from the higher temperature to the lower temperature than the first threshold temperature T1, the determination circuit 36 determines that at least one of the amplifiers 29a to 29c has failed, and the determination is made. The determination unit 37 of the circuit 36 transmits a failure signal indicating a failure to the warning control unit 39 as a determination result.

  In this way, the determination circuit 36 performs a failure determination operation. The failure determination operation by the determination circuit 36 ′ is also different from the failure determination operation by the determination circuit 36 in that a failure signal is transmitted to the warning control unit 39 and the power supply control unit 40 ′. It is performed in the same way as the operation.

  According to the high frequency amplification device 20 according to the first embodiment described above, the failure detection circuit 24 is a circuit that detects the temperature of the amplifier 29c and determines the failure of the amplifiers 29a to 29c. Alternatively, it is not necessary to be electrically connected to the drive circuit 23, and if the first temperature sensor 35 is disposed at a position where it is thermally connected to the amplifiers 29a to 29c, it is not used in the case 21. Can be placed in space. As a result, the case 21 can be reduced in size, and the high-frequency amplifier 20 can be reduced in size.

  Furthermore, according to the high frequency amplification device 20 according to the first embodiment, the failure detection circuit 24 is a circuit that detects the temperature of the amplifiers 29a to 29c and performs failure determination. 22 and the drive circuit 23 can be provided so as to be electrically shielded. As a result, malfunction of the failure detection circuit 24 due to wraparound of large RF signals, EMI noise, or the like can be suppressed, and the reliability of failure detection by the high frequency amplifier 20 can be improved.

<Second Embodiment>
FIG. 7 is a block diagram schematically showing a failure detection circuit 51 included in the high-frequency amplification device according to the second embodiment. The failure detection circuit 51 shown in FIG. 7 is configured so that the storage unit 53 of the determination circuit 52 has a first reference value for failure determination as compared with the failure detection circuit 24 included in the high-frequency amplification device 20 according to the first embodiment. In addition to the threshold temperature, the second threshold temperature higher than the first threshold temperature is stored. Further, when the determination unit 54 receives the first detection temperature from the first temperature sensor 35, the determination unit 54 reads the first and second threshold temperatures from the storage unit 53, and the first detection temperature and the first and second threshold temperatures are read out. The difference is that the failure determination of the amplifiers 29a to 29c is performed by comparing with the threshold temperature. Since the other configuration is the same as that of the failure detection circuit 24 shown in FIG. 4, the same reference numerals are given and the description thereof is omitted.

  As shown in FIG. 8, the determination circuit 52 ′ further includes amplifiers 29 a to 29 c based on the determination result by the determination unit 54 in addition to the determination unit 54, the storage unit 53, and the warning control unit 39. You may have the power supply control part 40 'which controls the 1st, 2nd voltage source 101 which supplies a bias voltage.

  Next, an example of the failure determination operation by this high frequency amplifier will be described with reference to FIG. FIG. 9 is a diagram for explaining a failure determination operation by the high-frequency amplification device according to the second embodiment. In the figure, the horizontal axis indicates time, and the vertical axis indicates the temperature detected by the first temperature sensor.

  As shown in FIG. 9, when a driving voltage is supplied to the amplifiers 29a to 29c at time t0 and RF is input to the amplifiers 29a to 29c via the RF input terminal 30, each of the amplifiers 29a to 29c amplifies the RF power. Starts operation and generates heat. Therefore, the temperature of the amplifiers 29a to 29c rises.

  When the temperature of the amplifiers 29a to 29c rises and the temperature of the amplifier 29c closest to the first temperature sensor 35 reaches the first threshold temperature T1 at time t1 and reaches a temperature within the normal temperature region, the determination circuit 52 The failure determination of the amplifiers 29a to 29c is started.

  Even after starting the failure determination, the amplifiers 29a to 29c continue to perform the amplification operation, and when the steady state is reached at time t2, when the amplifiers 29a to 29c are normal, as shown by a dotted line in the figure, the further increase is made. The amplification operation is continued while maintaining a constant temperature without increasing the temperature.

  However, if any of the amplifiers 29a to 29c is abnormal and, as indicated by a solid line in the figure, the amplifier 29c abnormally generates heat and continues to rise in temperature even after the time t2 when it is normally in a steady state, At time t5, the amplifier 29c reaches the second threshold temperature T2, and the temperature of the amplifier 29c becomes a temperature within the abnormal temperature region. In this way, when the temperature of the amplifier 29c is changed from a temperature lower than the second threshold temperature T2, the amplifier 29C determines that it will fail after that even though the amplifier 29C continues the amplification operation. It is determined that at least one of the amplifiers 29a to 29c has failed, and the determination unit 54 of the determination circuit 52 transmits a failure signal indicating the failure to the warning control unit 39 as a determination result.

  If the amplifiers 29a to 29c are continuously used as they are, at least the amplifier 29c becomes high temperature, for example, the amplifier 29c fails at time t3, and thereafter, the amplification operation is not performed. In this case, after time t3, the temperature of the amplifier 29c decreases, reaches the second threshold temperature at time t6, the temperature of the amplifier 29c becomes a temperature within the normal temperature region, and further the temperature of the amplifier 29c decreases, At t4, the first threshold temperature is reached, and the temperature of the amplifier 29c becomes a temperature within the abnormal temperature region.

  Here, since the determination circuit 52 has determined that at least one of the amplifiers 29a to 29c has once failed at time t5, the temperature of the amplifier 29c is a temperature within the normal temperature region after time t6 to t4. Even if it becomes, as a failure determination by the determination part 54 of the determination circuit 52, the normal signal which shows that the amplifiers 29a-29c are normal is not transmitted, but a failure signal is transmitted. When the temperature of the amplifier 29c becomes a temperature within the normal temperature region at time t6 to t4, the determination unit 54 of the determination circuit 52 outputs a normal signal instead of the failure signal, and the temperature of the amplifier 29c is within the abnormal temperature region. The determination unit 54 of the determination circuit 52 may output the failure signal again at the time t4 when the temperature becomes the temperature, but from the viewpoint of the stability of the failure determination by the determination unit 54, the determination unit 54 temporarily determines the failure. It is preferable to maintain the determination after having done.

  In this way, the determination circuit 52 performs a failure detection operation. Note that the failure determination operation by the determination circuit 52 ′ also differs from the failure determination operation by the determination circuit 52 in that a failure signal is transmitted to the warning control unit 39 and the power supply control unit 40 ′. It is performed in the same way as the operation.

  Also in the high frequency amplification device according to the second embodiment described above, the failure detection circuit 51 is a circuit that detects the temperature of the amplifier 29c and determines the failure of the amplifiers 29a to 29c. For the same reason as the high-frequency amplifier 20 according to the above, the case 21 can be downsized, and the high-frequency amplifier can be downsized. Furthermore, the reliability of failure detection by the high frequency amplifier can be improved.

  Furthermore, in the high frequency amplification device according to the second embodiment, it is also possible to detect that the amplifier 29c has abnormally heated (for example, time t5 in FIG. 7). Therefore, it is possible to take measures such as stopping the operation of the amplifiers 29a to 29c at this time, and it is possible to suppress the failure of the amplifiers 29a to 29c due to the continued high temperature state.

<Third Embodiment>
FIG. 10 is a cross-sectional view corresponding to FIG. 2 showing a high-frequency amplifier according to the third embodiment. FIG. 11 is a block diagram schematically showing a failure detection circuit of the high frequency amplification device according to the third embodiment. The high-frequency amplifier 60 shown in FIGS. 10 and 11 is different from the high-frequency amplifier 20 according to the first embodiment in that the failure detection circuit 61 includes a second temperature sensor 62. The determination circuit 63 is different in that it is connected to the first temperature sensor 35 and the second temperature sensor 62. Since other configurations are the same as those of the high-frequency amplification device 20 according to the first embodiment, the same reference numerals are given and descriptions thereof are omitted.

  The second temperature sensor 62 is disposed in the vicinity of the first temperature sensor 35 in the second space 27 b of the case 21. By arranging the second temperature sensor 62 in this way, the temperature around the first temperature sensor 35 can be detected. As such a second temperature sensor 62, it is preferable to apply a temperature sensor capable of direct measurement, such as a thermistor or a thermocouple, as in the case of the first temperature sensor 35. For example, an infrared detector or the like may be used. Even a temperature sensor capable of simple indirect measurement can be applied.

  Further, when the determination unit 64 of the determination circuit 63 illustrated in FIG. 11 receives the second detected temperature from the second temperature sensor 62, the determination unit 64 receives the first received from the storage unit 38 based on the detected temperature. The threshold temperature is appropriately changed and set. In other words, the second temperature sensor 62 is a temperature sensor for setting the first threshold temperature, which is a reference value for failure determination, in accordance with the change in the ambient temperature of the first temperature sensor 35. When the second detected temperature detected by the temperature sensor 62 changes with time, the first threshold temperature received from the storage unit 38 is changed and set according to the change. When the determination unit 64 receives the first detection temperature from the first temperature sensor 35, the determination unit 64 compares the first threshold temperature set at this time with the first detection temperature, thereby the amplifiers 29a to 29a. The failure determination of 29c is performed.

  As shown in FIG. 12, the determination circuit 63 ′ further includes amplifiers 29 a to 29 c based on the determination result by the determination unit 64 in addition to the determination unit 64, the storage unit 38, and the warning control unit 39. You may have the power supply control part 40 'which controls the 1st, 2nd voltage source 101 which supplies a bias voltage.

  Next, an example of a failure determination operation by the high frequency amplification device 60 will be described with reference to FIG. FIG. 13 is a diagram for explaining a failure determination operation by the high-frequency amplification device 60 according to the third embodiment. In the figure, the horizontal axis indicates time, and the vertical axis indicates the temperature detected by the first temperature sensor. FIG. 13 shows a case where the temperature around the first temperature sensor 35 is detected over time by the second temperature sensor 62, and the second detected temperature rises with the passage of time.

  As shown in FIG. 13, when a drive voltage is supplied to the amplifiers 29a to 29c at time t0 and RF is input to the amplifiers 29a to 29c via the RF input terminal 30, the amplifiers 29a to 29c perform an RF power amplification operation. Start and generate heat. Therefore, the temperature of the amplifiers 29a to 29c rises.

  The temperature of the amplifiers 29a to 29c rises, and at the time t1, the temperature of the amplifier 29c is set based on the second detection temperature by the second temperature sensor 62 detected at the time t1. When T1 (t1) is reached and the temperature is within the normal temperature range, the determination circuit 63 starts determining the failure of the amplifiers 29a to 29c.

  Even after starting the failure determination, the amplifiers 29a to 29c continue to perform the amplification operation. When the steady state is reached at time t2, the temperature of the amplifiers 29a to 29c does not increase, and the temperature of the amplifiers 29a to 29c The amplification operation is continued while changing in the same manner as the change in the detected temperature 2 (change in the ambient temperature of the first temperature sensor 35).

  As a result of the increase in temperature of the amplifiers 29a to 29c according to the ambient temperature in this way, abnormal heat generation occurs in at least one of the amplifiers 29a to 29c at time t7, resulting in a high temperature. For example, at least at time t3 of the amplifiers 29a to 29c at time t3. Assume that one of them fails and no longer performs amplification. In this case, the temperature of the amplifier 29c decreases after the time t3, and at the time t4, the temperature of the amplifier 29c is set to the first threshold temperature T1 (set based on the second detected temperature detected at the time t4). t4) is reached and the temperature is within the abnormal temperature range. As described above, when the temperature of the amplifier 29c is changed from a higher temperature to a lower temperature than the first threshold temperature T1 set as appropriate, the determination circuit 63 determines that at least one of the amplifiers 29a to 29c has failed. Then, the determination unit 64 of the determination circuit 63 transmits a failure signal indicating a failure to the warning control unit 39 as a determination result.

  In this way, the determination circuit 63 performs a failure determination operation. Note that the failure determination operation by the determination circuit 63 ′ also differs from the failure determination operation by the determination circuit 63 in that a failure signal is transmitted to the warning control unit 39 and the power supply control unit 40 ′. It is performed in the same way as the operation.

  Also in the high frequency amplification device 60 according to the third embodiment described above, the failure detection circuit 61 is a circuit that detects the temperature of the amplifier 29c and determines the failure of the amplifiers 29a to 29c. For the same reason as the high-frequency amplification device 20 according to the embodiment, the case 21 can be reduced in size, and the high-frequency amplification device can be reduced in size. Furthermore, the reliability of failure detection by the high frequency amplifier can be improved.

  Furthermore, in the high frequency amplification device 60 according to the third embodiment, since the first threshold temperature T1 is changed and set according to the change in the ambient temperature of the first temperature sensor 35, the first temperature sensor 35 is set. Even when the ambient temperature changes, the accuracy of failure determination can be maintained without deteriorating. As a result, the failure determination can be performed with a desired accuracy regardless of the change in the ambient temperature, so that the reliability of the failure detection by the high frequency amplifier can be improved.

<Fourth Embodiment>
FIG. 14 is a block diagram schematically illustrating a failure detection circuit 71 included in the high-frequency amplification device according to the fourth embodiment. Compared with the failure detection circuit 61 included in the high-frequency amplification device 60 according to the third embodiment, the failure detection circuit 71 illustrated in FIG. 14 has the storage unit 73 of the determination circuit 72 as a reference value for failure determination. In addition to the threshold temperature, the second threshold temperature higher than the first threshold temperature is stored. Further, when the determination unit 74 receives the first detected temperature from the first temperature sensor 35, the determination unit 74 reads the first and second threshold temperatures from the storage unit 73, and the first detected temperature and the first and second threshold temperatures are read out. The difference is that the failure determination of the amplifiers 29a to 29c is performed by comparing with the threshold temperature. Other configurations are the same as those of the failure detection circuit 61 shown in FIG.

  As shown in FIG. 15, the determination circuit 72 ′ further includes amplifiers 29 a to 29 c based on the determination result by the determination unit 74 in addition to the determination unit 74, the storage unit 73, and the warning control unit 39. You may have the power supply control part 40 'which controls the 1st, 2nd voltage source 101 which supplies a bias voltage.

  Next, an example of the failure determination operation by this high frequency amplifier will be described with reference to FIG. FIG. 16 is a diagram for explaining a failure determination operation by the high frequency amplification device according to the fourth embodiment. In the figure, the horizontal axis indicates time, and the vertical axis indicates the temperature detected by the first temperature sensor. FIG. 16 shows a case where the temperature around the first temperature sensor 35 is detected over time by the second temperature sensor 62 and the second detected temperature rises as time passes.

  As shown in FIG. 16, when a drive voltage is supplied to the amplifiers 29a to 29c at time t0 and RF is input to the amplifiers 29a to 29c via the RF input terminal 30, the amplifiers 29a to 29c perform an RF power amplification operation. Start and generate heat. Therefore, the temperature of the amplifiers 29a to 29c rises.

  The temperature of the amplifiers 29a to 29c rises, and at the time t1, the temperature of the amplifier 29c is set based on the second detection temperature by the second temperature sensor 62 detected at the time t1. When the temperature reaches T1 (t1) and reaches a temperature within the normal temperature range, the determination circuit 72 starts a failure determination of the amplifiers 29a to 29c.

  Even after starting the failure determination, the amplifiers 29a to 29c continue to perform the amplification operation. When the steady state is reached at time t2, the temperature of the amplifiers 29a to 29c does not increase, and the temperature of the amplifiers 29a to 29c The amplification operation is continued while changing in the same manner as the change in the detected temperature 2 (change in the ambient temperature of the first temperature sensor 35).

  As described above, the amplifiers 29a to 29c rise in temperature according to the ambient temperature of the first temperature sensor 35. At time t7, at least one of the amplifiers 29a to 29c generates abnormal heat and becomes high temperature. At time t5, The temperature of the amplifier 29c reaches the second threshold temperature T2 (t5) set based on the second detected temperature detected at this time t5, and the temperature of the amplifier 29c becomes a temperature in the abnormal temperature region. As described above, when the temperature of the amplifier 29c is changed from the low temperature to the high temperature than the second threshold temperature T2 (t5), it is determined that the amplifiers 29a to 29c fail after that although the amplifier 29a continues the amplification operation. The determination circuit 72 determines that at least one of the amplifiers 29a to 29c has failed, and the determination unit 74 of the determination circuit 72 transmits a failure signal indicating the failure to the warning control unit 39 as a determination result. To do.

  If the amplifiers 29a to 29c are continuously used as they are, the amplifiers 29a to 29c become high temperature. For example, at time t3, at least one of the amplifiers 29a to 29c fails, and thereafter, the amplification operation is not performed. In this case, after time t3, the temperature of the amplifiers 29a to 29c decreases, and at time t6, the temperature of the amplifier 29c is the second threshold temperature set based on the second detected temperature detected at this time t6. T2 (t6) is reached and the temperature is within the normal temperature range, and at time t4, the first threshold temperature T1 (t4) set based on the second detected temperature detected at time t4 is reached and abnormal. The temperature is within the temperature range.

  Here, since the determination circuit 72 once determines that any one of the amplifiers 29a to 29c has failed at time t5, the temperature of the amplifier 29c is set to a temperature within the normal temperature region after time t6 to t4. Even so, as a failure determination by the determination unit 74 of the determination circuit 72, a normal signal indicating that the amplifiers 29a to 29c are normal is not transmitted, but a failure signal is transmitted. When the temperature of the amplifier 29c becomes a temperature within the normal temperature region at time t6 to t4, the determination unit 74 of the determination circuit 72 outputs a normal signal instead of the failure signal, and the temperature of the amplifier 29c is within the abnormal temperature region. The determination unit 74 of the determination circuit 72 may output the failure signal again at the time t4 when the temperature reaches the temperature, but from the viewpoint of the stability of the failure determination by the determination unit 74, the determination unit 74 temporarily determines the failure. It is preferable to maintain the determination after having done.

  In this way, the determination circuit 72 performs a failure detection operation. The failure determination operation by the determination circuit 72 ′ is also different from the failure determination operation by the determination circuit 72 in that a failure signal is transmitted to the warning control unit 39 and the power supply control unit 40 ′. It is performed in the same way as the operation.

  Also in the high frequency amplification device according to the fourth embodiment described above, the failure detection circuit 71 is a circuit that detects the temperature of the amplifier 29c and determines the failure of the amplifiers 29a to 29c. Therefore, the third embodiment For the same reason as the high-frequency amplifier 60 according to the above, the case 21 can be downsized, the high-frequency amplifier can be downsized, and the reliability of failure detection by the high-frequency amplifier can be improved. Furthermore, since the first threshold temperature and the second threshold temperature are changed according to the change in the ambient temperature of the first temperature sensor 35, the ambient temperature of the first temperature sensor 35 is changed. However, the accuracy of failure determination can be maintained without degrading, and the reliability of failure detection by the high-frequency amplifier can be improved.

  Furthermore, in the high frequency amplification device according to the fourth embodiment, it is also possible to detect that the amplifiers 29a to 29c have generated abnormal heat (for example, time t5 in FIG. 16). Therefore, it is possible to take measures such as stopping the operation of the amplifiers 29a to 29c at this time, and it is possible to suppress the failure of the amplifiers 29a to 29c due to the continued high temperature state.

  Although the embodiment of the present invention has been described above, this embodiment is presented as an example and is not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1, 20, 20 ', 60 ... High frequency amplifier 2, 29a-29c ... Amplifier 3, 22 ... Amplifier circuit 4, 23 ... Drive circuit 4a ... 1st bias supply circuit 4b ... Second bias supply circuit 5, 24, 24 ', 51, 61, 71 ... Failure detection circuit 6, 30 ... RF input terminals 7, 31 ... RF output terminals 8a, 8b, 8c , 8d, capacitor 9a, first voltage source 9b, second voltage source 11, 35, first temperature sensor 10, 36, 36 ', 52, 52', 63, 63 ', 72, 72' ... judgment circuit 21 ... case 25 ... base 25a ... first recess 25b ... second recess 26a ... first metal lid 26b ... 2nd metal lid 27a ... 1st space 27b ... 2nd space 28 ... Board | substrate 32 ... Power supply control Nectar 33 ... power supply control board 34 '... electromagnetic shields 37, 54, 64, 74 ... determination units 38, 53, 73 ... storage unit 39 ... warning control unit 40' ... power supply Control unit 62 ... second temperature sensor 100 ... failure warning means 101 ... first and second voltage sources

Claims (8)

An amplifier circuit including an amplifier that amplifies high-frequency power;
A drive circuit for supplying a drive voltage to the amplifier;
A failure detection circuit provided so as to be electrically shielded from the amplifier circuit and the drive circuit;
Comprising
The failure detection circuit is disposed at a position thermally connected to the amplifier, and a first temperature sensor that detects a temperature of the amplifier;
A determination circuit that is electrically connected to the first temperature sensor and determines a failure of the amplifier based on a first detected temperature obtained by the first temperature sensor;
A high frequency amplifying apparatus comprising: The determination circuit includes a storage unit that stores a first threshold temperature;
A determination unit that determines failure of the amplifier based on a comparison between the first threshold temperature stored in the storage unit and the first detection temperature;
The high frequency amplification device according to claim 1, comprising:   The determination unit determines a failure of the amplifier when the first detection temperature is lower than the first threshold temperature and when the first detection temperature is lower than the first threshold temperature. The high frequency amplification device according to claim 2. The failure detection circuit further includes a second temperature sensor that detects a temperature around the first temperature sensor,
4. The high-frequency amplification device according to claim 2, wherein the determination unit changes the first threshold temperature in accordance with a change in a second detected temperature by the second temperature sensor. 5. The determination circuit stores a first threshold temperature and a second threshold temperature higher than the threshold temperature;
A determination unit that determines a failure of the amplifier based on a comparison between the second threshold temperature stored in the storage unit and the first detection temperature;
The high frequency amplification device according to claim 1, comprising:   The high frequency amplification device according to claim 5, wherein the determination unit determines that the amplifier is faulty when the first detection temperature is lower than the second threshold temperature.   The high frequency amplification device according to claim 6, wherein the determination unit maintains the determination result after determining the failure of the amplifier. The failure detection circuit further includes a second temperature sensor that detects a temperature around the first temperature sensor,
The said determination part changes the said 1st threshold temperature and the said 2nd threshold temperature according to the change of the 2nd detection temperature by the said 2nd temperature sensor, The Claim 5 thru | or 7 characterized by the above-mentioned. The high frequency amplification device according to any one of the above.

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