JP2016040524A - CHIP SUBSTRATE FORMED OF CdTe OR CdZnTe, RADIATION DETECTOR USING THE SAME, AND PRODUCTION METHOD OF RADIATION DETECTOR - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a radiation detector in which leakage current is reduced, and detection sensitivity of radiation spectra and energy resolution are improved, a production method of it, and a chip substrate formed of CdTe or CdZnTe for achieving them.SOLUTION: The chip substrate formed of CdTe or CdZnTe comprises a chipping on an end part of the chip substrate, and a length of the chipping is equal to or less than 300 μm. The length of the chipping satisfies a relationship of a1<a2, when a maximum length out of respective lengths in which, a first extension line of a ridgeline of a first side of the chip substrate is drawn, and the first extension line and an edge part where there is the chipping of the chip substrate have an orthogonal relationship, is a1, and a maximum length out of respective lengths in which, a second extension line drawn from a ridgeline of a second side of the chip substrate is drawn and the second extension line and the edge part of the chipping have an orthogonal relationship, is a2. Further, the length of the chipping is defined as a maximum length to a length direction of the a1, and when a1=a2, as a maximum length to length directions of the a1 and a2.SELECTED DRAWING: Figure 1

Description

The present invention relates to a chip substrate made of CdTe or CdZnTe, a radiation detector using the chip substrate, and a method of manufacturing the radiation detector.

II-VI group compound semiconductors cadmium telluride (CdTe) and zinc cadmium telluride (CdZnTe) have a larger band gap than silicon (Si) and germanium (Ge), and are used as radiation detectors. Since the influence of thermal noise and the like can be reduced, the detector can be configured without the need for a cooling device, so that it is possible to reduce the size, and it is easy to further increase the resistance by doping impurities, Since generation of dark current (leakage current) can be suppressed, it is used for a radiation detector capable of improving energy resolution. The radiation detector is configured by connecting a radiation detection element in which metal electrodes are formed on both surfaces of a substrate made of a single crystal of CdTe or CdZnTe to a detection circuit. The radiation detector detects radiation by converting the amount of electrons emitted when the radiation detecting element receives radiation into a current by a detection circuit and amplifying it.

In order to improve the detection sensitivity and energy resolution of the radiation spectrum, it has been studied to perform various treatments on a substrate formed of a single crystal of CdTe or CdZnTe. For example, Patent Document 1 discloses that the product μτ of the carrier mobility μ and the carrier lifetime τ is 2.0 × by applying a heat treatment to the substrate at a temperature of 250 ° C. to 450 ° C. for at least 20 hours. It is described that it is 10 ⁻³ cm ² / V or more.

On the other hand, in order to improve the detection sensitivity and energy resolution of the radiation spectrum, it is necessary to prevent a sudden increase in leakage current due to carrier injection when a voltage is applied from the metal electrode to the substrate. For example, in Patent Document 2, when the surface of a substrate is subjected to polishing and the surface of the substrate is observed with an atomic force microscope, there is a trace of linear polishing damage having a depth of 1 nm or more within a visual field range of 10 μm × 10 μm. It is described that a substrate that is not observed and in which no orange peel is observed when the substrate surface is visually observed under a fluorescent lamp is described. Patent Document 3 describes that an electrode is formed by electroless plating after removing the work-affected layer by etching the substrate surface.

JP-A-6-3455985 International Publication No. 2011/0405066 JP-A-3-2014487

However, in order to further improve the detection sensitivity and energy resolution of the radiation spectrum, it is necessary to further reduce the leakage current. The leak current cannot be sufficiently reduced only by the method described above, and a new approach is required.

The present invention solves the problems of the prior art as described above, reduces the leakage current, and improves the detection sensitivity and energy resolution of the radiation spectrum, the manufacturing method thereof, and CdTe or CdZnTe realizing the same. It is an object of the present invention to provide a chip substrate comprising:

According to an embodiment of the present invention, there is provided a chip substrate having a rectangular shape made of CdTe or CdZnTe, which has chipping at an end portion of the chip substrate, and the chipping length is 300 μm or less. .

In the chip substrate, the chipping length is calculated by drawing a first extension line of a ridge line on the first side surface of the chip substrate, and an edge portion where the chipping of the chip substrate occurs and the first extension line. The edge where the maximum distance among the lengths that are orthogonal to each other is a1, and chipping has occurred even with respect to the second extension line drawn from the ridge line of the second side surface that is orthogonal to the first side surface And the second extension line are orthogonal to each other, the maximum distance is a2, and the relationship is a1 <a2, and the maximum distance with respect to the length direction of a1. Also good. Further, when a1 = a2, the maximum distances in the length directions of a1 and a2 may be used.

According to an embodiment of the present invention, any one of the chip substrates, a first metal electrode disposed on a first surface of the chip substrate, and the chip substrate facing the first surface And a second metal electrode disposed on the second surface of the radiation detector.

According to an embodiment of the present invention, a substrate made of CdTe or CdZnTe is prepared, the first surface of the substrate and the second surface of the substrate facing the first surface are polished, Forming a first metal electrode on the first surface of the substrate; forming a second metal electrode on the second surface of the substrate so as to face the first metal electrode; and And the second metal electrode are cut into a predetermined shape, and chipping occurs at the end of the chip substrate on which the first metal electrode and the second metal electrode are arranged. There is provided a method of manufacturing a radiation detector including forming the chip substrate such that the length of the radiation detector is 300 μm or less.

In the manufacturing method of the radiation detector, the chipping length is obtained by drawing a first extension line of a ridge line on the first side surface of the chip substrate, and the edge portion where the chipping of the chip substrate occurs and the first chip. Chipping is also applied to the second extension line drawn from the ridge line of the second side surface orthogonal to the first side surface with the maximum distance a1 among the lengths that are orthogonal to the extension line. Of the lengths in which the generated edge portion and the second extension line are orthogonal to each other, the maximum distance is a2, and a relationship of a1 <a2 is satisfied, and the maximum length with respect to the length direction of the a1 It may be a distance. Further, when a1 = a2, the maximum distances in the length directions of a1 and a2 may be used.

The chip substrate made of CdTe or CdZnTe according to the present invention can realize a radiation detector with reduced leakage current and improved radiation spectrum detection sensitivity and energy resolution.

It is a schematic diagram which shows the radiation detection element 100 used for the radiation detector which concerns on one Embodiment of this invention, (a) is a top view of the radiation detection element 100, (b) is the cross section in AA 'of (a). It is a figure, (c) is the figure which expanded the chipping 150 of (b). It is a side view of the radiation detector 500 provided with the radiation detection element 100 which concerns on one Embodiment of this invention. It is a figure which shows the state of the chipping produced by the dicing which concerns on one Example of this invention. It is a figure which shows the characteristic of the radiation detection element 100 which concerns on one Example of this invention, (a) shows the relationship between chipping length and a leakage current, (b) shows the relationship between the chipping length and the half value width of a radiation spectrum. Indicates. It is a figure which shows the relationship between the chipping length of the radiation detection element 100 which concerns on one Example of this invention, and a radiation peak intensity.

Hereinafter, a chip substrate made of CdTe or CdZnTe according to the present invention, a radiation detector using the same, and a method of manufacturing the radiation detector will be described with reference to the drawings. The chip substrate made of CdTe or CdZnTe of the present invention, the radiation detector using the chip substrate, and the manufacturing method of the radiation detector are not construed as being limited to the description of the following embodiments and examples. . Note that in the drawings referred to in this embodiment mode and examples to be described later, the same portions or portions having similar functions are denoted by the same reference numerals, and description thereof is not repeated.

FIG. 1 is a schematic diagram showing a radiation detection element 100 used in a radiation detector according to an embodiment of the present invention. 1A is a top view of the radiation detection element 100, FIG. 1B is a cross-sectional view taken along the line AA ′ in FIG. 1A, and FIG. 1C is the chipping 150 in FIG. FIG. FIG. 2 is a side view of the radiation detector 500 including the radiation detection element 100.

The radiation detection element 100 includes a chip substrate 20, a first metal electrode 11 disposed on a first surface of the chip substrate 20 (a lower surface of the chip substrate 20 in FIG. 1B), a first surface, And a second metal electrode 13 disposed on the second surface of the chip substrate 20 facing (in FIG. 1B, the upper surface of the chip substrate 20). For example, the first metal electrode 11 is formed on the entire first surface of the chip substrate 20. The second metal electrode 13 is arranged in a matrix on the second surface of the chip substrate 20, for example. The radiation detector 500 includes an integrated circuit substrate 50 on which the third metal electrode 60 is disposed. The second metal electrode 13 of the radiation detection element 100 is connected to a corresponding third metal electrode 60 disposed on the integrated circuit substrate 50 via a bump 65.

The chip substrate 20 is a substrate made of CdTe or CdZnTe. The chip substrate 20 is formed in a thin plate shape. For example, the main surface on which the first metal electrode 11 and the second metal electrode 13 are formed is a (111) surface. Since the crystal orientation [111] is a polar axis in CdZnTe, the surface composition on the second surface side of the surface of the chip substrate 20 has a high Cd ratio, and the surface composition on the first surface side has a Te ratio. It is high.

The 1st metal electrode 11, the 2nd metal electrode 13, and the 3rd metal electrode 60 are formed with the thin film using noble metals, such as gold | metal | money, platinum, and iridium. In the present embodiment, the first metal electrode 11 and the second metal electrode 13 are common electrodes. The third metal electrode 60 receives a current from the second metal electrode 13 via the bump 65.

The integrated circuit board 50 includes a capacitor, an amplifier, and the like. When the chip substrate 20 receives radiation (hard X-rays or γ-rays) and emits electrons, the electrons become an ionization current due to a bias voltage, and the second metal electrode 13, the bump 65, and the second metal are emitted from the radiation detection element 100. It flows to the integrated circuit board 50 through the electrode 13. It is converted into a pulse signal through a capacitor and an amplifier, and the pulse signal is analyzed by a multi-channel analyzer to obtain a radiation spectrum.

As will be described later, the radiation detection element 100 is manufactured through a dicing process after the metal electrode forming process. In CdTe and CdZnTe constituting the chip substrate 20, due to the occurrence of processing strain in the dicing process, a large number of work-affected layers appear at the end of the chip substrate 20 and chipping (chipping) at the cut surface increases. The present inventors have found that chipping is a cause of lowering the detection sensitivity and energy resolution of the radiation detection element 100. The knowledge about the reduction of the detection sensitivity and the energy resolution of the radiation detection element 100 due to the chipping of the chip substrate 20 has not been reported so far, and the present invention to be described below is based on the leakage current of the radiation detector. It is a novel approach that reduces and improves the detection sensitivity and energy resolution of the radiation spectrum.

Here, reference is made to FIG. As described above, the radiation detection element 100 is manufactured by forming the first metal electrode 11 and the second metal electrode 13 and then dicing the chip substrate 20. At this time, chipping 150 is generated as shown in FIG. The present inventors have found that when the chipping length is in the range of 300 μm or less, the leakage current of the radiation detection element 100 can be reduced, and the detection sensitivity and energy resolution of the radiation spectrum can be improved. As shown in the examples described later, when the chipping length exceeds 300 μm, the leakage current increases rapidly, which is not preferable. On the other hand, since the dicing process is essential, the chipping cannot be completely eliminated from the chip substrate 20, but the chipping length can be reduced to about 20 to 50 μm.

In this specification, the “chipping length” is described based on FIG. 1C and FIG. 3, and the chipping (chip) portion inside the chip substrate and the ridge line of the side surface 171 of the rectangular chip substrate. The extension line 181 is drawn and the edge 155 where the chipping has occurred and the extension line 181 are orthogonal to each other, and the maximum distance is a1, and the side surface is orthogonal to the side surface 171 of the rectangular chip substrate. The maximum distance a2 of the lengths of the chipping edge 155 and the extension line 183 orthogonal to the extension line 183 drawn from the ridge line 173 has a relation of a1 <a2, and , A1 is defined as the maximum distance 190 in the length direction. When a1 = a2, it is defined as the maximum distance 190 in the length direction of each of a1 and a2.

This application reports for the first time that the leakage current can be reduced and the detection sensitivity and energy resolution of the radiation spectrum can be improved by controlling the length of the chipping 150 generated in the chip substrate 20 to 300 μm or less. .

(Production method of radiation detector)
A method of manufacturing the radiation detector 500 for controlling the length of the chipping 150 generated on the chip substrate 20 to a predetermined range will be described. The manufacturing method of the radiation detector 500 includes, for example, a substrate manufacturing process, an electrode forming process, and a dicing process, but is not limited thereto. The substrate manufacturing process is a process of preparing a substrate made of CdTe or CdZnTe, and a thin disk-shaped substrate (wafer) is cut out by cutting a single crystal ingot of CdTe or CdZnTe along the crystal plane (111) ( Cutting step). The cut out substrate is physically cut by using an abrasive such as alumina powder on the cut surfaces (the first surface on which the first metal electrode 11 is disposed and the second surface on which the second metal electrode 13 is disposed). Mirror polishing (polishing process). This polishing step may be repeated multiple times for each substrate.

In the electrode formation step, the first metal electrode 11 is formed on the first surface of the substrate, and the second metal electrode 13 is formed on the second surface of the substrate so as to face the first metal electrode ( Electrode forming step). In the electrode forming process, for example, the substrate is immersed in methanol, and ultrasonic cleaning is performed at room temperature, thereby removing foreign matters attached to the substrate.

For example, by immersing the substrate in a plating solution in which hydrochloric acid is mixed in a chloroplatinic acid (IV) hexahydrate aqueous solution, a noble metal such as platinum (Pt) is deposited on the polished surface of the substrate to form a metal electrode. (Plating process). Then, it is made to dry by spraying nitrogen gas on a board | substrate, and the board | substrate provided with the 1st metal electrode 11 and the 2nd metal electrode 13 is obtained. The first metal electrode 11 and the second metal electrode 13 may be formed in one plating process, or may be formed in another plating process using different metal solutions.

The substrate provided with the first metal electrode 11 and the second metal electrode 13 is divided into chip substrates 20 by a dicing process. Here, in the present invention, the chipping length is controlled within the above-described range. In order to dice the substrate, a slicer or a dicer is generally used. In the present invention, in order to suppress the occurrence of chipping, it is necessary to reduce the processing strain generated in the substrate during dicing. For this reason, in this invention, it is preferable to use the dicer which can cut | disconnect a board | substrate with high precision for a dicing process. In this way, the radiation distortion detecting device 100 according to the present embodiment can be manufactured by cutting the chip substrate 20 including the first metal electrode 11 and the second metal electrode 13 from the substrate while reducing the processing strain. it can.

Further, the obtained radiation detection element 100 is connected to the integrated circuit substrate 50 provided with the third metal electrode 60 via the bumps 65. The second metal electrode 13 is connected to the third metal electrode 60 to obtain the radiation detector 500. In the present embodiment, a known material can be used for the bump 65, and examples thereof include gold (Au) and solder.

As described above, in the present invention, by using a dicer capable of cutting the substrate with high accuracy in the dicing process, the processing strain generated in the substrate is reduced, and the chipping length is controlled within the above-described range. Can do.

(Production of CdZnTe single crystal)
As an example, a CdTe single crystal substrate was used. CdTe single crystals were grown by the VGF method (for example, JP 2010-150138 A). A quartz ampoule having a reservoir portion was disposed at the center of the atmospheric pressure vessel, and a crucible made of pBN (pyrolytic Boron Nitride) was disposed in the quartz ampoule. A heater was provided so as to surround the quartz ampule. A heater having a three-stage multistage structure that can heat the portion corresponding to the crucible and the portion corresponding to the reservoir to different temperatures and finely control the temperature distribution in the atmospheric container.

About 10 g of Cd, which is a readily volatile element, was placed in the reservoir portion of the quartz ampule, and about 3000 g of CdTe raw material was placed in a pBN crucible and placed in the quartz ampule, and then the quartz ampule was vacuum sealed. At this time, the CdTe raw material used was a CdTe polycrystal synthesized by doping with 100 ppm wt of chlorine divided into blocks.

Then, the temperature is raised with a heater to melt the CdTe raw material in the crucible, and the reservoir is heated to 780 ° C. with the heater to control the Cd vapor pressure to 0.116 MPa and the crucible is heated to 1100 ° C. did. Furthermore, the temperature in the heating furnace is gradually decreased at a temperature decrease rate of 0.1 ° C./hr while controlling the amount of electric power supplied to each heater so that a desired temperature distribution is generated in the normal pressure vessel, A CdTe single crystal was grown downward from the surface of the raw material melt over about 200 hours.

  Thereafter, the CdTe single crystal was heated at 950 ° C. for 20 hours while applying a Cd vapor pressure of 0.130 MPa (post-annealing) to obtain a Cl-doped n-type CdZnTe single crystal ingot having a diameter of 78 mm and a length of 60 mm.

Five CdTe substrates having a thickness of 1800 μm and a thickness of 30 mm × 30 mm were cut out from the manufactured CdTe single crystal ingot, and the processing steps were performed as a set of 5 sheets as a batch. A lapping treatment was performed using a polishing liquid obtained by dissolving alumina abrasive grains having a particle diameter of 2 μm in water and a glass polishing plate, and the thickness was processed to 1400 μm. Next, polishing (mirror polishing) treatment was performed under the following conditions using a rotary polishing machine with a polishing cloth.

(Policing condition)
Mirror polishing liquid: Mirror polishing liquid in which each component is mixed in the following ratio: Calcium hypochlorite aqueous solution (effective chlorine 70%): 1 L
Calcium bicarbonate: 150g
Water: 4L
Calcium chloride: 60g
Surface plate diameter of polishing machine: 300mmφ
Plate rotation speed: 50 rpm
Processing pressure: 70 g / cm ²
Polishing time: 70 min
Polishing flow rate: 2L / hr
Polishing amount: 50 μm
Polishing cloth: polyurethane foam soft cloth

(Formation of metal electrodes)
The substrate was immersed in an etching solution of a methanol solution mixed with 1% by volume of bromine, and the polished surface of the substrate was etched at room temperature to remove the work-affected layer from the surface of the substrate. The etching solution was removed from the substrate using methanol, and methanol was removed from the substrate using pure water.

Thereafter, the substrate is immersed in a plating solution in which hydrochloric acid is mixed with an aqueous solution of chloroplatinic acid (IV) hexahydrate having a temperature of 50 ° C. and a concentration of 0.83 g / L, thereby depositing Pt on the surface of the substrate to form a metal electrode. Formed. Thereafter, the substrate was dried by spraying nitrogen gas to obtain a Pt // Pt electrode substrate (a substrate in which Pt electrodes are arranged on both sides of the substrate).

The substrate provided with the Pt // Pt electrode was divided into the chip substrate 20 by the dicing process, and the radiation detection element 100 was formed.

(Dicing process)
In this example, a dicing process was performed on the prepared substrate. The substrate was diced using a dicer as an example and a slicer as a comparative example. Table 1 shows the dicing conditions of the examples and comparative examples.

FIG. 3 is a diagram illustrating a state of chipping caused by dicing according to the present embodiment. The length of chipping generated by dicing according to the present example was 300 μm or less. Table 2 shows the chipping lengths for the examples and comparative examples.

(Leakage current)
For the radiation detection element 100 of the example and the comparative example, a voltage was applied between both electrodes facing each other so as to sandwich the CdTe substrate, and the leakage current was measured without irradiation from the radiation source. FIG. 4A shows the relationship between chipping length and leakage current. FIG. 4 (a) shows that the leakage current is small until the chipping length is 300 μm.

(Half width of radiation spectrum)
The radiation detection element 100 of the example and the comparative example was irradiated with gamma rays from a radiation source using ⁵⁷ Co as a tube, and the half width (FWHM) of the energy spectrum intensity of 122.1 keV detected at that time was measured. . FIG. 4B shows the relationship between the chipping length and the full width at half maximum. From FIG. 4 (b), it has been clarified that when the chipping length exceeds 300 μm, the half width increases rapidly.

(Radiation peak intensity)
The radiation detection element 100 of the example and the comparative example was irradiated with gamma rays from a radiation source using ⁵⁷ Co as a tube, and the peak intensity (Intensity) of the 122.1 keV energy spectrum detected at that time was measured. FIG. 5 shows the relationship between the chipping length and the radiation peak intensity. From FIG. 5, it was found that when the chipping length exceeds 300 μm, the radiation peak intensity rapidly decreases.

11: 1st metal electrode, 13: 2nd metal electrode, 20: Chip substrate, 60: 3rd metal electrode, 65: Bump, 100: Radiation detection element, 150: Chipping, 155: Edge, 171: Side surface of chip substrate, 173: Side surface of chip substrate, 181: Line, 183: Line, 190: Maximum distance, 500: Radiation detector

Claims (5)

A chip substrate made of CdTe or CdZnTe,
Having chipping at the end of the chip substrate;
A chip substrate having a chipping length of 300 μm or less. The chipping length is such that the first extension line of the ridge line of the first side surface of the chip substrate is drawn, and the edge portion where the chipping of the chip substrate occurs and the first extension line are orthogonal to each other. The maximum distance among the lengths is a1, and the edge portion where chipping has occurred with respect to the second extension line drawn from the ridge line of the second side surface orthogonal to the first side surface and the second side Of the lengths orthogonal to the extension line, the maximum distance is a2, the relationship is a1 <a2, and the maximum distance is in the length direction of a1, where a1 = a2. The chip substrate according to claim 1, wherein is a maximum distance in the length direction of the a1 and the a2. The chip substrate according to claim 1 or 2,
A first metal electrode disposed on a first surface of the chip substrate;
A radiation detector, comprising: a second metal electrode disposed on a second surface of the chip substrate facing the first surface. Preparing a substrate made of CdTe or CdZnTe,
Polishing the first surface of the substrate and the second surface of the substrate facing the first surface;
Forming a first metal electrode on the first surface of the substrate, and forming a second metal electrode on the second surface of the substrate so as to face the first metal electrode;
Cutting the substrate on which the first metal electrode and the second metal electrode are disposed into a predetermined shape;
Forming the chip substrate such that a chipping length generated at an end portion of the chip substrate on which the first metal electrode and the second metal electrode are disposed is 300 μm or less. A method of manufacturing a radiation detector. The chipping length is such that the first extension line of the ridge line of the first side surface of the chip substrate is drawn, and the edge portion where the chipping of the chip substrate occurs and the first extension line are orthogonal to each other. The maximum distance among the lengths is a1, and the edge portion where chipping has occurred with respect to the second extension line drawn from the ridge line of the second side surface orthogonal to the first side surface and the second side Of the lengths orthogonal to the extension line, the maximum distance is a2, the relationship is a1 <a2, and the maximum distance with respect to the length direction of a1, where a1 = a2 The method of manufacturing a radiation detector according to claim 4, wherein the distance is a maximum distance in a length direction of the a <b> 1 and the a <b> 2.