JP2016034042A - Manufacturing method of semiconductor device, substrate processing apparatus, and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form an insulation film having characteristics of a low dielectric constant, low etching rate and high insulating performance.SOLUTION: An oxy carbonitride film of predetermined film thickness in which carbonitride layers and oxide layers are alternately laminated on a substrate, is formed by alternately and repeatedly performing the steps of: forming a carbonitride layer of predetermined thickness containing a predetermined chemical element on the substrate by supplying predetermined element containing gas, carbon containing gas and nitride containing gas to the heated substrate in a processing chamber; and forming an oxide layer of predetermined thickness containing a predetermined chemical element on the substrate by supplying the predetermined element containing gas and oxygen containing gas to the heated substrate in the processing chamber.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a semiconductor device manufacturing method, a substrate processing method, and a substrate processing apparatus including a step of forming a thin film on a substrate.

During the manufacturing process of a semiconductor device (device), a silicon oxide film (SiO ₂ film, hereinafter simply referred to as SiO film) or a silicon nitride film (Si ₃ N ₄ film, hereinafter simply SiN) is formed on a wafer such as a silicon wafer. There is a step of forming a silicon insulating film such as a film. Silicon oxide films are excellent in insulating properties, low dielectric properties, etc., and are widely used as insulating films and interlayer films. Silicon nitride films are excellent in insulation, corrosion resistance, dielectric properties, film stress controllability, and the like, and are widely used as insulating films, mask films, charge storage films, and stress control films. In addition, a technique for adding carbon (C) to these insulating films is also known (see, for example, Patent Document 1), which makes it possible to improve the etching resistance of the insulating films.

JP 2005-268699 A

  However, by adding carbon to the insulating film, the etching resistance of the insulating film can be improved, while the dielectric constant increases and the leak resistance deteriorates. That is, each insulating film has advantages and disadvantages, and conventionally, there has been no film having low dielectric constant, low etching rate, and high insulating properties.

  Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device, a substrate processing method, and a substrate processing apparatus capable of forming an insulating film having low dielectric constant, low etching rate, and high insulating properties.

According to one aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of
Forming a predetermined thickness of an oxide layer containing a predetermined element on the substrate by supplying a predetermined element-containing gas and an oxygen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, there is provided a method of manufacturing a semiconductor device including a step of forming a predetermined thickness of an oxycarbonitride film in which the carbonitride layers and the oxide layers are alternately stacked on the substrate. The

According to another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of
Forming a predetermined thickness of an oxide layer containing a predetermined element on the substrate by supplying a predetermined element-containing gas and an oxygen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, there is provided a substrate processing method including a step of forming an oxycarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the oxide layer on the substrate.

According to yet another aspect of the invention,
A processing container for containing a substrate;
A heater for heating the substrate in the processing container;
A predetermined element-containing gas supply system for supplying a predetermined element-containing gas to the substrate in the processing container;
A carbon-containing gas supply system for supplying a carbon-containing gas to the substrate in the processing container;
A nitrogen-containing gas supply system for supplying a nitrogen-containing gas to the substrate in the processing vessel;
An oxygen-containing gas supply system for supplying an oxygen-containing gas to the substrate in the processing container;
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a predetermined element-containing gas and an oxygen-containing gas are supplied to the heated substrate in the processing container, thereby forming an oxide layer having a predetermined thickness containing the predetermined element on the substrate. The heater, the predetermined treatment, and the like so as to form an oxycarbonitride film having a predetermined thickness on which the carbonitride layer and the oxide layer are alternately stacked on the substrate. A control unit for controlling the element-containing gas supply system, the carbon-containing gas supply system, the nitrogen-containing gas supply system, and the oxygen-containing gas supply system;
A substrate processing apparatus is provided.

  According to the present invention, an insulating film having low dielectric constant, low etching rate, and high insulating properties can be formed.

It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus used suitably by this embodiment, and is a figure which shows a processing furnace part with a longitudinal cross-sectional view. It is a schematic block diagram of the vertical processing furnace of the substrate processing apparatus used suitably by this embodiment, and is a figure which shows a processing furnace part with the sectional view on the AA line of FIG. It is a figure which shows the film-forming flow in the 1st sequence of this embodiment. It is a figure which shows the timing of the gas supply in the 1st sequence of this embodiment. It is a figure which shows the film-forming flow in the 2nd sequence of this embodiment. It is a figure which shows the timing of the gas supply in the 2nd sequence of this embodiment. It is a figure which shows the film-forming flow in the application example of the 1st sequence of this embodiment. It is a figure which shows the timing of the gas supply in the application example of the 1st sequence of this embodiment. It is a figure which shows the film-forming flow in the application example of the 2nd sequence of this embodiment. It is a figure which shows the timing of the gas supply in the application example of the 2nd sequence of this embodiment. It is a schematic block diagram of the controller of the substrate processing apparatus used suitably by this embodiment.

  Embodiments of the present invention will be described below with reference to the drawings.

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus suitably used in the present embodiment, and shows a processing furnace 202 portion in a vertical sectional view. 2 is a schematic configuration diagram of a vertical processing furnace suitably used in the present embodiment, and the processing furnace 202 portion is shown by a cross-sectional view along the line AA in FIG.

  As shown in FIG. 1, the processing furnace 202 includes a heater 207 as a heating means (heating mechanism). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate. The heater 207 also functions as an activation mechanism that activates gas with heat, as will be described later.

Inside the heater 207, a reaction tube 203 constituting a reaction vessel (processing vessel) concentrically with the heater 207 is disposed. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 201 is formed in a cylindrical hollow portion of the reaction tube 203, and is configured so that wafers 200 as substrates can be accommodated in a state of being aligned in multiple stages in a horizontal posture and in a vertical direction by a boat 217 described later.

  In the processing chamber 201, a first nozzle 249a, a second nozzle 249b, a third nozzle 249c, and a fourth nozzle 249d are provided so as to penetrate the lower part of the reaction tube 203. The first nozzle 249a, the second nozzle 249b, the third nozzle 249c, and the fourth nozzle 249d include a first gas supply pipe 232a, a second gas supply pipe 232b, a third gas supply pipe 232c, and a fourth gas supply pipe 232d. , Each connected. Thus, the reaction tube 203 is provided with four nozzles 249a, 249b, 249c, and 249d and four gas supply tubes 232a, 232b, 232c, and 232d. Then, it is comprised so that four types of gas can be supplied.

  A metal manifold that supports the reaction tube 203 may be provided below the reaction tube 203, and each nozzle may be provided so as to penetrate the side wall of the metal manifold. In this case, an exhaust pipe 231 to be described later may be further provided on the metal manifold. Even in this case, the exhaust pipe 231 may be provided below the reaction pipe 203 instead of the metal manifold. As described above, the furnace port portion of the processing furnace 202 may be made of metal, and a nozzle or the like may be attached to the metal furnace port portion.

  The first gas supply pipe 232a is provided with a mass flow controller (MFC) 241a that is a flow rate controller (flow rate control unit) and a valve 243a that is an on-off valve in order from the upstream direction. A first inert gas supply pipe 232e is connected to the downstream side of the valve 243a of the first gas supply pipe 232a. The first inert gas supply pipe 232e is provided with a mass flow controller 241e that is a flow rate controller (flow rate control unit) and a valve 243e that is an on-off valve in order from the upstream direction. The first nozzle 249a described above is connected to the tip of the first gas supply pipe 232a. The first nozzle 249a is provided in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. It has been. That is, the first nozzle 249a is provided on the side of the wafer arrangement area where the wafers 200 are arranged, in a region that horizontally surrounds the wafer arrangement area, along the wafer arrangement area. The first nozzle 249a is configured as an L-shaped long nozzle, and its horizontal portion is provided so as to penetrate the lower side wall of the reaction tube 203, and its vertical portion is at least from one end side of the wafer arrangement region. It is provided to stand up toward the end side. A gas supply hole 250a for supplying gas is provided on the side surface of the first nozzle 249a. The gas supply hole 250 a is opened to face the center of the reaction tube 203. A plurality of gas supply holes 250a are provided from the bottom to the top of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch. A first gas supply system is mainly configured by the first gas supply pipe 232a, the mass flow controller 241a, the valve 243a, and the first nozzle 249a. Further, a first inert gas supply system is mainly configured by the first inert gas supply pipe 232e, the mass flow controller 241e, and the valve 243e.

  The second gas supply pipe 232b is provided with a mass flow controller (MFC) 241b that is a flow rate controller (flow rate control unit) and a valve 243b that is an on-off valve in order from the upstream direction. Further, a second inert gas supply pipe 232f is connected to the downstream side of the valve 243b of the second gas supply pipe 232b. The second inert gas supply pipe 232f is provided with a mass flow controller 241f as a flow rate controller (flow rate control unit) and a valve 243f as an on-off valve in order from the upstream direction. The second nozzle 249b is connected to the tip of the second gas supply pipe 232b. The second nozzle 249 b is provided in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. It has been. In other words, the second nozzle 249b is provided on the side of the wafer arrangement area where the wafers 200 are arranged, in a region that horizontally surrounds the wafer arrangement area, along the wafer arrangement area. The second nozzle 249b is configured as an L-shaped long nozzle, and its horizontal portion is provided so as to penetrate the lower side wall of the reaction tube 203, and its vertical portion is at least from one end side of the wafer arrangement region. It is provided to stand up toward the end side. A gas supply hole 250b for supplying gas is provided on the side surface of the second nozzle 249b. The gas supply hole 250 b is opened to face the center of the reaction tube 203. A plurality of the gas supply holes 250b are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch. A second gas supply system is mainly configured by the second gas supply pipe 232b, the mass flow controller 241b, the valve 243b, and the second nozzle 249b. In addition, a second inert gas supply system is mainly configured by the second inert gas supply pipe 232f, the mass flow controller 241f, and the valve 243f.

  The third gas supply pipe 232c is provided with a mass flow controller (MFC) 241c that is a flow rate controller (flow rate control unit) and a valve 243c that is an on-off valve in order from the upstream direction. A third inert gas supply pipe 232g is connected to the downstream side of the valve 243c of the third gas supply pipe 232c. The third inert gas supply pipe 232g is provided with a mass flow controller 241g, which is a flow rate controller (flow rate control unit), and a valve 243g, which is an on-off valve, in order from the upstream direction. The third nozzle 249c is connected to the tip of the third gas supply pipe 232c. The third nozzle 249c is provided in an arc-shaped space between the inner wall of the reaction tube 203 and the wafer 200 so as to rise upward from the lower portion of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. It has been. That is, the third nozzle 249c is provided along the wafer arrangement region in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region where the wafers 200 are arranged. The third nozzle 249c is configured as an L-shaped long nozzle, and a horizontal portion thereof is provided so as to penetrate the lower side wall of the reaction tube 203, and a vertical portion thereof is at least from one end side of the wafer arrangement region. It is provided to stand up toward the end side. A gas supply hole 250c for supplying gas is provided on the side surface of the third nozzle 249c. The gas supply hole 250 c is opened to face the center of the reaction tube 203. A plurality of gas supply holes 250c are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch. A third gas supply system is mainly configured by the third gas supply pipe 232c, the mass flow controller 241c, the valve 243c, and the third nozzle 249c. In addition, a third inert gas supply system is mainly configured by the third inert gas supply pipe 232g, the mass flow controller 241g, and the valve 243g.

  The fourth gas supply pipe 232d is provided with a mass flow controller (MFC) 241d that is a flow rate controller (flow rate control unit) and a valve 243d that is an on-off valve in order from the upstream direction. A fourth inert gas supply pipe 232h is connected to the downstream side of the valve 243d of the fourth gas supply pipe 232d. The fourth inert gas supply pipe 232h is provided with a mass flow controller 241h as a flow rate controller (flow rate control unit) and a valve 243h as an on-off valve in order from the upstream direction. The fourth nozzle 249d is connected to the tip of the fourth gas supply pipe 232d. The fourth nozzle 249d is provided in a buffer chamber 237 that is a gas dispersion space.

  The buffer chamber 237 is provided in a circular arc space between the inner wall of the reaction tube 203 and the wafer 200 in a portion extending from the lower part to the upper part of the inner wall of the reaction tube 203 along the loading direction of the wafer 200. That is, the buffer chamber 237 is provided along the wafer arrangement region in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region in which the wafers 200 are arranged. A gas supply hole 250e for supplying gas is provided at the end of the wall of the buffer chamber 237 adjacent to the wafer 200. The gas supply hole 250e is opened to face the center of the reaction tube 203. A plurality of the gas supply holes 250e are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch.

  The fourth nozzle 249d is located at the end of the buffer chamber 237 opposite to the end where the gas supply hole 250e is provided, and extends upward from the bottom of the inner wall of the reaction tube 203 in the stacking direction of the wafer 200. It is provided to stand up. That is, the fourth nozzle 249d is provided along the wafer arrangement region in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region where the wafers 200 are arranged. The fourth nozzle 249d is configured as an L-shaped long nozzle, and its horizontal part is provided so as to penetrate the lower side wall of the reaction tube 203, and its vertical part is at least from one end side of the wafer arrangement region. It is provided to stand up toward the end side. A gas supply hole 250d for supplying a gas is provided on a side surface of the fourth nozzle 249d. The gas supply hole 250d is opened to face the center of the buffer chamber 237. A plurality of gas supply holes 250 d are provided from the lower part to the upper part of the reaction tube 203, similarly to the gas supply holes 250 e of the buffer chamber 237. Each of the gas supply holes 250d has the same opening area from the upstream side (lower part) to the downstream side (upper part) when the differential pressure between the buffer chamber 237 and the processing chamber 201 is small. However, when the differential pressure is large, the opening area is increased or the opening pitch is decreased from the upstream side toward the downstream side.

  In the present embodiment, by adjusting the opening area and the opening pitch of the gas supply holes 250d of the fourth nozzle 249d as described above from the upstream side to the downstream side, first, from each of the gas supply holes 250d, Although there is a difference in flow velocity, gas with the same flow rate is ejected. Then, the gas ejected from each of the gas supply holes 250d is once introduced into the buffer chamber 237, and the flow velocity difference of the gas is made uniform in the buffer chamber 237.

  That is, the gas jetted into the buffer chamber 237 from each of the gas supply holes 250d of the fourth nozzle 249d is reduced in the particle velocity of each gas in the buffer chamber 237, and then processed from the gas supply hole 250e of the buffer chamber 237. It spouts into 201. Accordingly, when the gas ejected into the buffer chamber 237 from each of the gas supply holes 250d of the fourth nozzle 249d is ejected into the processing chamber 201 from each of the gas supply holes 250e of the buffer chamber 237, a uniform flow rate is obtained. And a gas having a flow rate.

  A fourth gas supply system is mainly configured by the fourth gas supply pipe 232d, the mass flow controller 241d, the valve 243d, the fourth nozzle 249d, and the buffer chamber 237. In the fourth gas supply system, the buffer chamber 237 functions as a nozzle that supplies gas toward the wafer 200. In addition, a fourth inert gas supply system is mainly configured by the fourth inert gas supply pipe 232h, the mass flow controller 241h, and the valve 243h.

  As described above, the gas supply method according to the present embodiment uses the nozzles 249a disposed in the arc-shaped vertical space defined by the inner wall of the reaction tube 203 and the ends of the stacked wafers 200. The wafer 200 is transported through the gas supply holes 250a, 250b, 250c, 250d, and 250e opened to the nozzles 249a, 249b, 249c, and 249d and the buffer chamber 237, respectively. For the first time, gas is jetted into the reaction tube 203 in the vicinity of, and the main flow of gas in the reaction tube 203 is in a direction parallel to the surface of the wafer 200, that is, in the horizontal direction. With such a configuration, there is an effect that the gas can be supplied uniformly to each wafer 200 and the thickness of the thin film formed on each wafer 200 can be made uniform. The residual gas after the reaction flows toward the exhaust port, that is, the direction of the exhaust pipe 231 described later. The direction of the residual gas flow is appropriately specified by the position of the exhaust port and is limited to the vertical direction. It is not a thing.

From the first gas supply pipe 232a, for example, a silicon source gas, that is, a gas containing silicon (Si) (silicon-containing gas) is supplied into the processing chamber 201 through the mass flow controller 241a, the valve 243a, and the first nozzle 249a. Is done. As the silicon-containing gas, for example, hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCD) gas can be used. In addition, when using the liquid raw material which is a liquid state under normal temperature normal pressure like HCD, a liquid raw material will be vaporized with vaporization systems, such as a vaporizer and a bubbler, and will be supplied as raw material gas.

From the second gas supply pipe 232b, for example, carbon (C), that is, a gas containing carbon (carbon-containing gas) is supplied into the processing chamber 201 through the mass flow controller 241b, the valve 243b, and the second nozzle 249b. As the carbon-containing gas, for example, propylene (C ₃ H ₆ ) gas can be used. Further, for example, a gas containing hydrogen (H) (hydrogen-containing gas) is supplied from the second gas supply pipe 232b into the processing chamber 201 via the mass flow controller 241b, the valve 243b, and the second nozzle 249b. It may be. As the hydrogen-containing gas, for example, hydrogen (H ₂ ) gas can be used.

From the third gas supply pipe 232c, for example, a gas containing nitrogen (N) (nitrogen-containing gas) is supplied into the processing chamber 201 via the mass flow controller 241c, the valve 243c, and the third nozzle 249c. As the nitrogen-containing gas, for example, ammonia (NH ₃ ) gas can be used.

From the fourth gas supply pipe 232d, for example, a gas containing oxygen (O) (oxygen-containing gas) is supplied into the processing chamber 201 via the mass flow controller 241d, the valve 243d, the fourth nozzle 249d, and the buffer chamber 237. . As the oxygen-containing gas, for example, oxygen (O ₂ ) gas can be used. Further, from the fourth gas supply pipe 232d, for example, a gas containing boron, that is, boron (B) (boron-containing gas) is supplied into the processing chamber 201 through the mass flow controller 241d, the valve 243d, and the fourth nozzle 249d. You may make it do. As the boron-containing gas, for example, boron trichloride (BCl ₃ ) gas or diborane (B ₂ H ₆ ) gas can be used.

For example, nitrogen (N ₂ ) gas is supplied from the inert gas supply pipes 232e, 232f, 232g, and 232h to mass flow controllers 241e, 241f, 241g, and 241h, valves 243e, 243f, 243g, and 243h, and gas supply pipes 232a and 232b, respectively. 232c, 232d, gas nozzles 249a, 249b, 249c, 249d and the buffer chamber 237, and is supplied into the processing chamber 201.

  Note that, for example, when the above-described gases are supplied from the respective gas supply pipes, the first gas supply system constitutes a source gas supply system, that is, a silicon-containing gas supply system (silane-based gas supply system). The second gas supply system constitutes a carbon-containing gas supply system or a hydrogen-containing gas supply system. Further, a nitrogen-containing gas supply system is configured by the third gas supply system. The fourth gas supply system constitutes an oxygen-containing gas supply system or a boron-containing gas supply system. The source gas supply system is also simply referred to as a source supply system. In addition, when the carbon-containing gas, hydrogen-containing gas, nitrogen-containing gas, oxygen-containing gas, and boron-containing gas are collectively referred to as reaction gas, a carbon-containing gas supply system, a hydrogen-containing gas supply system, and a nitrogen-containing gas supply system. The oxygen-containing gas supply system and the boron-containing gas supply system constitute a reaction gas supply system.

  In the buffer chamber 237, as shown in FIG. 2, a first rod-shaped electrode 269 that is a first electrode having an elongated structure and a second rod-shaped electrode 270 that is a second electrode are provided at the bottom of the reaction tube 203. The upper part is disposed along the stacking direction of the wafers 200. Each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is provided in parallel with the fourth nozzle 249d. Each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 is protected by being covered with an electrode protection tube 275 that is a protection tube that protects each electrode from the top to the bottom. Either the first rod-shaped electrode 269 or the second rod-shaped electrode 270 is connected to the high-frequency power source 273 via the matching unit 272, and the other is connected to the ground as the reference potential. As a result, plasma is generated in the plasma generation region 224 between the first rod-shaped electrode 269 and the second rod-shaped electrode 270. The first rod-shaped electrode 269, the second rod-shaped electrode 270, the electrode protection tube 275, the matching unit 272, and the high-frequency power source 273 mainly constitute a plasma source as a plasma generator (plasma generating unit). The plasma source functions as an activation mechanism that activates a gas with plasma as will be described later.

  The electrode protection tube 275 has a structure in which each of the first rod-shaped electrode 269 and the second rod-shaped electrode 270 can be inserted into the buffer chamber 237 while being isolated from the atmosphere of the buffer chamber 237. Here, if the inside of the electrode protection tube 275 has the same atmosphere as the outside air (atmosphere), the first rod-shaped electrode 269 and the second rod-shaped electrode 270 inserted into the electrode protection tube 275 are oxidized by heat from the heater 207. Will be. Therefore, the inside of the electrode protection tube 275 is filled or purged with an inert gas such as nitrogen to suppress the oxygen concentration sufficiently low to prevent oxidation of the first rod-shaped electrode 269 or the second rod-shaped electrode 270. An active gas purge mechanism is provided.

  The reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. The exhaust pipe 231 is evacuated through a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjustment unit). A vacuum pump 246 as an exhaust device is connected. In addition, the APC valve 244 can open and close the vacuum pump 246 while the vacuum pump 246 is operated, and can stop the vacuum exhaust and the vacuum exhaust in the processing chamber 201. Further, the APC valve 244 is in a state where the vacuum pump 246 is operated. The on-off valve is configured so that the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening. By adjusting the opening degree of the APC valve 244 based on the pressure information detected by the pressure sensor 245 while operating the vacuum pump 246, the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum). It is configured so that it can be evacuated. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 244, the vacuum pump 246, and the pressure sensor 245.

  Below the reaction tube 203, a seal cap 219 is provided as a furnace opening lid capable of airtightly closing the lower end opening of the reaction tube 203. The seal cap 219 is brought into contact with the lower end of the reaction tube 203 from the lower side in the vertical direction. The seal cap 219 is made of a metal such as stainless steel and has a disk shape. An O-ring 220 is provided on the upper surface of the seal cap 219 as a seal member that contacts the lower end of the reaction tube 203. A rotation mechanism 267 for rotating the boat is installed on the side of the seal cap 219 opposite to the processing chamber 201. A rotation shaft 255 of the rotation mechanism 267 passes through the seal cap 219 and is connected to a boat 217 described later, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be lifted vertically by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203, and thereby the boat 217 is carried into and out of the processing chamber 201. It is possible.

  The boat 217 as a substrate support is made of a heat-resistant material such as quartz or silicon carbide, and is configured to support a plurality of wafers 200 in a horizontal posture and aligned in a state where the centers are aligned with each other in multiple stages. ing. A heat insulating member 218 made of a heat resistant material such as quartz or silicon carbide is provided at the lower part of the boat 217 so that heat from the heater 207 is not easily transmitted to the seal cap 219 side. The heat insulating member 218 may be constituted by a plurality of heat insulating plates made of a heat resistant material such as quartz or silicon carbide, and a heat insulating plate holder that supports them in a horizontal posture in multiple stages.

  A temperature sensor 263 as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. It is configured to have a desired temperature distribution. The temperature sensor 263 is configured in an L shape similarly to the nozzles 249a, 249b, 249c, and 249d, and is provided along the inner wall of the reaction tube 203.

  As shown in FIG. 11, the controller 121, which is a control unit (control means), includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. It is configured as a computer. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. For example, an input / output device 122 configured as a touch panel or the like is connected to the controller 121.

  The storage device 121c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like. In the storage device 121c, a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner. Note that the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 121 to execute each procedure in a substrate processing step to be described later, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. The RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.

  The I / O port 121d includes the above-described mass flow controllers 241a, 241b, 241c, 241d, 241e, 241f, 241g, 241h, valves 243a, 243b, 243c, 243d, 243e, 243f, 243g, 243h, pressure sensor 245, APC valve 244, a vacuum pump 246, a heater 207, a temperature sensor 263, a rotating mechanism 267, a boat elevator 115, a high frequency power supply 273, a matching unit 272, and the like.

  The CPU 121a is configured to read out and execute a control program from the storage device 121c, and to read out a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like. Then, the CPU 121a adjusts the flow rates of various gases by the mass flow controllers 241a, 241b, 241c, 241d, 241e, 241f, 241g, 241h and the valves 243a, 243b, 243c, 243d, and so on in accordance with the contents of the read process recipe. 243e, 243f, 243g, 243h open / close operation, APC valve 244 open / close operation, pressure adjustment operation based on pressure sensor 245 by APC valve 244, temperature adjustment operation of heater 207 based on temperature sensor 263, start / stop of vacuum pump 246 , The rotation speed adjustment operation of the rotation mechanism 267, the raising / lowering operation of the boat 217 by the boat elevator 115, the power supply of the high frequency power supply 273, the impedance adjustment operation by the matching unit 272, and the like are controlled.

  The controller 121 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer. For example, an external storage device storing the above-described program (for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) 123 is prepared, and the controller 121 according to the present embodiment can be configured by installing a program in a general-purpose computer using the external storage device 123. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 123. For example, the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. Note that when the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.

(2) Substrate Processing Step Next, as a step of manufacturing a semiconductor device (device) using the processing furnace of the substrate processing apparatus described above, a silicon oxycarbonitride film (SiOCN film) as an insulating film is formed on the substrate. A sequence example for forming a film will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

In an embodiment of the present invention,
By supplying a silicon-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated wafer 200 in the processing container, a silicon carbonitride layer (SiCN layer) having a predetermined thickness is formed on the wafer 200. Forming, and
Forming a silicon oxide layer (SiO layer) having a predetermined thickness on the wafer 200 by supplying a silicon-containing gas and an oxygen-containing gas to the heated wafer 200 in the processing container;
By alternately repeating the above, a silicon oxycarbonitride film (SiOCN film) having a predetermined thickness is formed on the wafer 200 by alternately laminating silicon carbonitride layers and silicon oxide layers.
In the present embodiment, since the silicon carbonitride layers and the silicon oxide layers are alternately laminated on the wafer 200, this film formation method is also referred to as a lamination method.

In the conventional CVD (Chemical Vapor Deposition) method and ALD (Atomic Layer Deposition) method, for example, in the case of the CVD method, a plurality of types of gases including a plurality of elements constituting a film to be formed are supplied simultaneously. In the case of the ALD method, a plurality of types of gas including a plurality of elements constituting a film to be formed are alternately supplied. Then, the SiO ₂ film and the Si ₃ N ₄ film are formed by controlling the supply conditions such as the gas supply flow rate, the gas supply time, and the plasma power during the gas supply. In those techniques, for example, when a SiO ₂ film is formed, the composition ratio of the film is O / Si≈2 which is a stoichiometric composition, and when a Si ₃ N ₄ film is formed, for example, The supply conditions are controlled for the purpose of making the ratio N / Si≈1.33, which is the stoichiometric composition.

  On the other hand, in the embodiment of the present invention, the supply conditions are controlled so that the composition ratio of the film to be formed becomes a stoichiometric composition or a predetermined composition ratio different from the stoichiometric composition. For example, the supply conditions are controlled in order to make at least one element out of a plurality of elements constituting the film to be formed more excessive than the other elements with respect to the stoichiometric composition. Hereinafter, a sequence example in which film formation is performed while controlling the ratio of a plurality of elements constituting the film to be formed, that is, the composition ratio of the film will be described.

(First sequence)
First, the first sequence of this embodiment will be described. FIG. 3 is a diagram showing a film forming flow in the first sequence of the present embodiment. FIG. 4 is a diagram illustrating gas supply timings in the first sequence of the present embodiment.

In the first sequence of this embodiment,
A step of forming a silicon-containing layer on the wafer 200 by supplying a silicon-containing gas to the heated wafer 200 in the processing container, and a carbon-containing gas to the heated wafer 200 in the processing container. By supplying, a step of forming a carbon-containing layer on the silicon-containing layer to form a layer containing silicon and carbon, and supplying a nitrogen-containing gas to the heated wafer 200 in the processing container Nitriding a layer containing silicon and carbon to form a silicon carbonitride layer (SiCN layer);
A step of forming a silicon-containing layer on the wafer 200 by supplying a silicon-containing gas to the heated wafer 200 in the processing container, and an oxygen-containing gas to the heated wafer 200 in the processing container. Supplying a step of oxidizing the silicon-containing layer to form a silicon oxide layer (SiO layer);
1 cycle, this cycle is performed a predetermined number of times (n times), whereby a silicon oxycarbonitride film (SiOCN) having a predetermined thickness formed by alternately laminating silicon carbonitride layers and silicon oxide layers on the wafer 200. Film).
In the first sequence of the present embodiment, a CVD reaction occurs in the step of forming the silicon-containing layer in both the step of forming the silicon carbonitride layer and the step of forming the silicon oxide layer. A silicon-containing gas is supplied to the wafer 200 under conditions.

Hereinafter, the first sequence of the present embodiment will be specifically described. Here, HCD gas is used as the silicon-containing gas, C ₃ H ₆ gas is used as the carbon-containing gas, NH ₃ gas is used as the nitrogen-containing gas, and O ₂ gas is used as the oxygen-containing gas. An example in which a silicon oxycarbonitride film (SiOCN film) is formed as an insulating film on a wafer 200 as a substrate will be described.

  When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), as shown in FIG. 1, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and processed in the processing chamber 201. It is carried in (boat loading). In this state, the seal cap 219 seals the lower end of the reaction tube 203 via the O-ring 220.

  The processing chamber 201 is evacuated by a vacuum pump 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information (pressure adjustment). Note that the vacuum pump 246 maintains a state in which it is always operated at least until the processing on the wafer 200 is completed. Further, the processing chamber 201 is heated by the heater 207 so as to have a desired temperature. At this time, the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution (temperature adjustment). Subsequently, the rotation of the boat 217 and the wafer 200 is started by the rotation mechanism 267. Note that the rotation of the boat 217 and the wafers 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafers 200 is completed. Thereafter, the following five steps are sequentially executed.

<SiCN layer forming step>
[Step 1]
The valve 243a of the first gas supply pipe 232a is opened, and the HCD gas is caused to flow into the first gas supply pipe 232a. The flow rate of the HCD gas flowing through the first gas supply pipe 232a is adjusted by the mass flow controller 241a. The HCD gas whose flow rate has been adjusted is supplied into the processing chamber 201 from the gas supply hole 250a of the first nozzle 249a and is exhausted from the exhaust pipe 231. At this time, the valve 243e is opened at the same time, and an inert gas such as N ₂ gas is allowed to flow into the inert gas supply pipe 232e. The flow rate of N ₂ gas that has flowed through the inert gas supply pipe 232e is adjusted by the mass flow controller 241e. The N ₂ gas whose flow rate has been adjusted is supplied into the processing chamber 201 together with the HCD gas, and is exhausted from the exhaust pipe 231.

At this time, the APC valve 244 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 10 to 1000 Pa. The supply flow rate of the HCD gas controlled by the mass flow controller 241a is, for example, a flow rate in the range of 10 to 1000 sccm. The supply flow rate of N ₂ gas controlled by the mass flow controller 241e is, for example, a flow rate in the range of 200 to 2000 sccm. The time for exposing the HCD gas to the wafer 200, that is, the gas supply time (irradiation time) is, for example, a time within the range of 1 to 120 seconds. At this time, the temperature of the heater 207 is set to a temperature at which a CVD reaction occurs in the processing chamber 201, that is, a temperature at which the temperature of the wafer 200 becomes a temperature in the range of 300 to 650 ° C., for example. When the temperature of the wafer 200 is less than 300 ° C., it becomes difficult for HCD to be adsorbed on the wafer 200. Further, when the temperature of the wafer 200 exceeds 650 ° C., the CVD reaction becomes strong, and the uniformity tends to deteriorate. Therefore, the temperature of the wafer 200 is preferably set to a temperature within the range of 300 to 650 ° C.

By supplying the HCD gas, a silicon-containing layer of, for example, less than one atomic layer to several atomic layers is formed on the wafer 200 (surface underlying film). The silicon-containing layer may be an HCD gas adsorption layer, a silicon layer (Si layer), or both of them. However, the silicon-containing layer is preferably a layer containing silicon (Si) and chlorine (Cl). Here, the silicon layer is a generic name including a continuous layer composed of silicon (Si), a discontinuous layer, and a silicon thin film formed by overlapping these layers. A continuous layer made of Si may be referred to as a silicon thin film. Note that Si constituting the silicon layer includes those in which the bond with Cl is not completely broken. The HCD gas adsorption layer includes a discontinuous chemical adsorption layer in addition to a continuous chemical adsorption layer of gas molecules of the HCD gas. That is, the adsorption layer of HCD gas includes a monomolecular layer composed of HCD molecules or a chemical adsorption layer of less than one molecular layer. The HCD (Si ₂ Cl ₆ ) molecules constituting the HCD gas adsorption layer include those in which the bond between Si and Cl is partially broken (Si _x Cl _y molecules). That is, the adsorption layer of HCD includes a continuous chemical adsorption layer or a discontinuous chemical adsorption layer of Si ₂ Cl ₆ molecules and / or Si _x Cl _y molecules. Note that a layer of less than one atomic layer means a discontinuous atomic layer, and a single atomic layer means a continuously formed atomic layer. Moreover, the layer of less than one molecular layer means a molecular layer formed discontinuously, and the layer of one molecular layer means a molecular layer formed continuously. Under conditions where the HCD gas is self-decomposed (thermally decomposed), that is, under conditions where a thermal decomposition reaction of HCD occurs, a silicon layer is formed by depositing Si on the wafer 200. Under the condition that the HCD gas is not self-decomposed (thermally decomposed), that is, under the condition where no thermal decomposition reaction of HCD occurs, the HCD gas is adsorbed on the wafer 200 to form an HCD gas adsorption layer. Note that it is preferable to form a silicon layer on the wafer 200 rather than forming an HCD gas adsorption layer on the wafer 200 because the deposition rate can be increased. When the thickness of the silicon-containing layer formed on the wafer 200 exceeds several atomic layers, the nitriding action in Step 3 described later does not reach the entire silicon-containing layer. The minimum value of the silicon-containing layer that can be formed on the wafer 200 is less than one atomic layer. Therefore, the thickness of the silicon-containing layer is preferably set to be less than one atomic layer to several atomic layers. Note that, by setting the thickness of the silicon-containing layer to 1 atomic layer or less, that is, 1 atomic layer or less than 1 atomic layer, the action of the nitriding reaction in Step 3 to be described later can be relatively enhanced. The time required for the nitriding reaction can be shortened. The time required for forming the silicon-containing layer in step 1 can also be shortened. As a result, the processing time per cycle can be shortened, and the total processing time can be shortened. That is, the film forming rate can be increased. In addition, by controlling the thickness of the silicon-containing layer to 1 atomic layer or less, it becomes possible to improve the controllability of film thickness uniformity.

After the silicon-containing layer is formed, the valve 243a is closed and the supply of HCD gas is stopped. At this time, the APC valve 244 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and the HCD gas remaining in the processing chamber 201 and contributing to the formation of the silicon-containing layer remains. Are removed from the processing chamber 201. At this time, the valve 243e is kept open and the supply of N ₂ gas into the processing chamber 201 is maintained. This enhances the effect of removing the unreacted HCD gas remaining in the processing chamber 201 or after contributing to the formation of the silicon-containing layer from the processing chamber 201.

Examples of the silicon-containing gas include hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCD) gas, tetrachlorosilane, that is, silicon tetrachloride (SiCl ₄ , abbreviation: STC) gas, trichlorosilane (SiHCl ₃ , abbreviation: TCS) gas, Not only inorganic raw materials such as dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) gas, monochlorosilane (SiH ₃ Cl, abbreviation: MCS) gas, monosilane (SiH ₄ ) gas, but also aminosilane-based tetrakisdimethylaminosilane (Si [ N (CH ₃ ) ₂ ] ₄ , abbreviation: 4DMAS) gas, trisdimethylaminosilane (Si [N (CH ₃ ) ₂ ] ₃ H, abbreviation: 3DMAS) gas, bisdiethylaminosilane (Si [N (C ₂ H ₅ ) _{2] 2} H _2, abbreviation: 2DEAS) gas, bis Over-tertiary-butylamino silane _{(SiH 2 [NH (C 4} H 9)] 2, abbreviated: BTBAS) gas, hexamethyldisilazane _{((CH 3) 3 SiNHSi (} CH 3) 3, abbreviated: HMDS) organic material, such as a gas May be used. As the inert gas, a rare gas such as Ar gas, He gas, Ne gas, or Xe gas may be used in addition to N ₂ gas.

[Step 2]
After step 1 is completed and residual gas in the processing chamber 201 is removed, the valve 243b of the second gas supply pipe 232b is opened, and C ₃ H ₆ gas is caused to flow into the second gas supply pipe 232b. The flow rate of the C ₃ H ₆ gas flowing through the second gas supply pipe 232b is adjusted by the mass flow controller 241b. The flow-adjusted C ₃ H ₆ gas is supplied from the gas supply hole 250b of the second nozzle 249b into the processing chamber and is exhausted from the exhaust pipe 231. Note that the C ₃ H ₆ gas supplied into the processing chamber 201 is activated by heat. At the same time, the valve 243f is opened, and N ₂ gas is caused to flow into the inert gas supply pipe 232f. N ₂ gas is supplied into the processing chamber 201 together with C ₃ H ₆ gas, and is exhausted from the exhaust pipe 231.

At this time, the APC valve 244 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 50 to 3000 Pa. The supply flow rate of the C ₃ H ₆ gas controlled by the mass flow controller 241b is set to a flow rate in the range of 100 to 10,000 sccm, for example. The supply flow rate of N ₂ gas controlled by the mass flow controller 241f is, for example, a flow rate in the range of 200 to 2000 sccm. At this time, the partial pressure of the C ₃ H ₆ gas in the processing chamber 201 is set to a pressure in the range of _{6 to} 2940 Pa. The time during which the C ₃ H ₆ gas is exposed to the wafer 200, that is, the gas supply time (irradiation time) is, for example, a time within the range of 1 to 120 seconds. The temperature of the heater 207 at this time is set to a temperature at which the temperature of the wafer 200 becomes a temperature within the range of 300 to 650 ° C. as in Step 1. Note that, when the C ₃ H ₆ gas is supplied by being activated by heat, a soft reaction can be caused, and the formation of a carbon-containing layer to be described later is facilitated.

At this time, the gas flowing into the processing chamber 201 is a thermally activated C ₃ H ₆ gas, and no HCD gas is flowing into the processing chamber 201. Accordingly, the C ₃ H ₆ gas does not cause a gas phase reaction, and is supplied to the wafer 200 in an activated state. A carbon-containing layer of less than one atomic layer, that is, a discontinuous carbon-containing layer is formed. As a result, a second layer containing silicon and carbon is formed. Depending on the conditions, a part of the silicon-containing layer may react with the C ₃ H ₆ gas, and the silicon-containing layer may be modified (carbonized) to form a second layer containing silicon and carbon. .

The carbon-containing layer formed on the silicon-containing layer may be a carbon layer (C layer), or a chemisorption layer of a carbon-containing gas (C ₃ H ₆ gas), that is, C ₃ H ₆ is decomposed. It may be a chemical adsorption layer of a substance (C _x H _y ). Here, the carbon layer needs to be a discontinuous layer made of carbon. Further, the C _x H _y chemisorption layer must be a discontinuous chemisorption layer of C _x H _y molecules. When the carbon-containing layer formed on the silicon-containing layer is a continuous layer, for example, the adsorption state of C _x H _{y on} the silicon-containing layer is set to a saturated state, and C _x H _{y is formed} on the silicon-containing layer. When the continuous chemical adsorption layer is formed, the surface of the silicon-containing layer is entirely covered with the C _x H _y chemical adsorption layer. In this case, silicon does not exist on the surface of the second layer, and the nitridation reaction of the second layer in Step 3 described later becomes difficult. This is because nitrogen bonds with silicon but does not bond with carbon. In order to cause a desired nitriding reaction in Step 3 to be described later, it is necessary to set the adsorption state of C _x H _{y on} the silicon-containing layer to an unsaturated state so that silicon is exposed on the surface of the second layer. There is.

In order to make the adsorption state of C _x H _{y on} the silicon-containing layer unsaturated, the processing conditions in step 2 may be the above-described processing conditions, but the processing conditions in step 2 are further changed to the following processing. By making the conditions, it becomes easy to make the adsorption state of C _x H _{y on} the silicon-containing layer an unsaturated state.

Wafer temperature: 500-630 ° C
Processing chamber pressure: 133 to 2666 Pa
C ₃ H ₆ gas partial pressure: 67-2515 Pa
C ₃ H ₆ gas supply flow rate: 1000 to 5000 sccm
N ₂ gas supply flow rate: 300 to 1000 sccm
C ₃ H ₆ gas supply time: _{6 to} 100 seconds

Thereafter, the valve 243b of the second gas supply pipe 232b is closed, and the supply of the C ₃ H ₆ gas is stopped. At this time, the APC valve 244 of the exhaust pipe 231 is kept open, the inside of the processing chamber 201 is evacuated by the vacuum pump 246, and C ₃ after contributing to the formation of unreacted or carbon-containing layer remaining in the processing chamber 201. H ₆ gas and reaction byproducts are removed from the processing chamber 201. At this time, the valve 243f is kept open and the supply of N ₂ gas into the processing chamber 201 is maintained. This enhances the effect of removing unreacted or residual C ₃ H ₆ gas and reaction by-products remaining in the processing chamber 201 from the processing chamber 201.

As the carbon-containing gas, in addition to propylene (C ₃ H ₆ ) gas, acetylene (C ₂ H ₂ ) gas, ethylene (C ₂ H ₄ ) gas, or the like may be used.

[Step 3]
After the residual gas in the processing chamber 201 is removed, the valve 243c of the third gas supply pipe 232c is opened, and NH ₃ gas is allowed to flow into the third gas supply pipe 232c. The flow rate of the NH ₃ gas flowing through the third gas supply pipe 232c is adjusted by the mass flow controller 241c. The NH ₃ gas whose flow rate has been adjusted is supplied into the processing chamber 201 from the gas supply hole 250 c of the third nozzle 249 c and exhausted from the exhaust pipe 231. Note that the NH ₃ gas supplied into the processing chamber 201 is activated by heat. At the same time, the valve 243g is opened to allow N ₂ gas to flow into the inert gas supply pipe 232g. The N ₂ gas is supplied into the processing chamber 201 together with the NH ₃ gas, and is exhausted from the exhaust pipe 231.

When the NH ₃ gas is activated by heat and flows, the APC valve 244 is adjusted appropriately so that the pressure in the processing chamber 201 is set to a pressure in the range of 50 to 3000 Pa, for example. The supply flow rate of NH ₃ gas controlled by the mass flow controller 241c is, for example, a flow rate in the range of 100 to 10,000 sccm. The supply flow rate of N ₂ gas controlled by the mass flow controller 241g is, for example, a flow rate in the range of 200 to 2000 sccm. At this time, the partial pressure of the NH ₃ gas in the processing chamber 201 is set to a pressure in the range of 6 to 2940 Pa. The time for exposing the wafer 200 to the NH ₃ gas, that is, the gas supply time (irradiation time) is, for example, a time within the range of 1 to 120 seconds. The temperature of the heater 207 at this time is set to a temperature at which the temperature of the wafer 200 becomes a temperature within the range of 300 to 650 ° C. as in Step 1. Since NH ₃ gas has a high reaction temperature and does not easily react at the wafer temperature as described above, it can be thermally activated by setting the pressure in the processing chamber 201 to a relatively high pressure as described above. Yes. Note that the NH ₃ gas activated by heat and supplied can generate a soft reaction, and nitriding described later can be performed softly.

At this time, the gas flowing in the processing chamber 201 is a thermally activated NH ₃ gas, and neither the HCD gas nor the C ₃ H ₆ gas is flowing in the processing chamber 201. Therefore, the NH ₃ gas does not cause a gas phase reaction, and the activated NH ₃ gas has a part of the layer containing silicon and carbon as the second layer formed on the wafer 200 in Step 2. react. As a result, the second layer is thermally nitrided by non-plasma and is changed (modified) into a third layer containing silicon, carbon, and nitrogen, that is, a silicon carbonitride layer (SiCN layer). .

  At this time, the nitridation reaction of the second layer is not saturated. For example, when a silicon layer having several atomic layers is formed in step 1 and a carbon-containing layer having less than one atomic layer is formed in step 2, a part of the surface layer (one atomic layer on the surface) is nitrided. That is, a part or all of a region (region where silicon is exposed) in the surface layer where nitridation can occur is nitrided. In this case, nitriding is performed under the condition that the nitriding reaction of the second layer is unsaturated so as not to nitride the entire second layer. Depending on conditions, several layers below the surface layer of the second layer can be nitrided, but nitriding only the surface layer improves the controllability of the composition ratio of the silicon oxycarbonitride film. This is preferable. For example, when a silicon layer having one atomic layer or less than one atomic layer is formed in Step 1 and a carbon-containing layer having less than one atomic layer is formed in Step 2, a part of the surface layer is similarly nitrided. Also in this case, nitriding is performed under the condition that the nitriding reaction of the second layer becomes unsaturated so that the entire second layer is not nitrided.

  In order to make the nitridation reaction of the second layer unsaturated, the processing conditions in step 3 may be the above-described processing conditions. However, by setting the processing conditions in step 3 as the following processing conditions, It becomes easy to make the nitriding reaction of the two layers unsaturated.

Wafer temperature: 500-630 ° C
Processing chamber pressure: 133 to 2666 Pa
NH ₃ gas partial pressure: 67-2515 Pa
NH ₃ gas supply flow rate: 1000 to 5000 sccm
N ₂ gas supply flow rate: 300 to 1000 sccm
NH ₃ gas supply time: 6 to 100 seconds

Thereafter, the valve 243c of the third gas supply pipe 232c is closed to stop the supply of NH ₃ gas. At this time, the APC valve 244 of the exhaust pipe 231 is kept open, the process chamber 201 is evacuated by the vacuum pump 246, and the NH ₃ gas remaining after the process chamber 201 contributes to unreacted or nitridated gas or reaction. By-products are removed from the processing chamber 201. At this time, the valve 243g is kept open and the supply of N ₂ gas into the processing chamber 201 is maintained. This enhances the effect of removing NH ₃ gas and reaction by-products remaining in the processing chamber 201 that have not yet reacted or contributed to nitridation from the processing chamber 201.

As the nitrogen-containing gas, in addition to ammonia (NH ₃ ) gas, diazine (N ₂ H ₂ ) gas, hydrazine (N ₂ H ₄ ) gas, N ₃ H ₈ gas, or the like may be used.

<SiO layer forming step>
[Step 4]
After the residual gas in the processing chamber 201 is removed, the SiCN layer (third layer) formed on the wafer 200 in step 3 is supplied and exhausted in the processing chamber 201 as in step 1. ) To form a silicon-containing layer as a fourth layer. After the silicon-containing layer is formed, the supply of the HCD gas is stopped and the residual gas in the processing chamber 201 is removed as in Step 1. In addition, the opening / closing operation of each valve, the processing conditions, the reaction to be generated, the layer to be formed, the residual gas removing method, the usable gas, and the like in Step 4 are the same as those in Step 1.

[Step 5]
After removing the residual gas in the processing chamber 201, the valve 243d of the fourth gas supply pipe 232d and the valve 243h of the fourth inert gas supply pipe 232h are opened, and O ₂ gas is caused to flow into the fourth gas supply pipe 232d. N ₂ gas is allowed to flow through the fourth inert gas supply pipe 232h. The flow rate of the N ₂ gas flowing through the fourth inert gas supply pipe 232h is adjusted by the mass flow controller 241h. The flow rate of the O ₂ gas that has flowed through the fourth gas supply pipe 232d is adjusted by the mass flow controller 241d. The flow-adjusted O ₂ gas is mixed with the flow-adjusted N ₂ gas in the fourth gas supply pipe 232d and supplied into the buffer chamber 237 from the gas supply hole 250d of the fourth nozzle 249d. At this time, no high frequency power is applied between the first rod-shaped electrode 269 and the second rod-shaped electrode 270. Thereby, the O ₂ gas supplied into the buffer chamber 237 is activated by heat, supplied into the processing chamber 201 from the gas supply hole 250 e toward the wafer 200, and exhausted from the exhaust pipe 231. At this time, high-frequency power can be applied between the first rod-shaped electrode 269 and the second rod-shaped electrode 270 to activate the O ₂ gas supplied into the buffer chamber 237 with plasma.

When the O ₂ gas is activated and flowed by heat, the APC valve 244 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 1 to 3000 Pa. The supply flow rate of the O ₂ gas controlled by the mass flow controller 241d is, for example, a flow rate in the range of 100 to 5000 sccm (0.1 to 5 slm). The supply flow rate of N ₂ gas controlled by the mass flow controller 241h is, for example, a flow rate in the range of 200 to 2000 sccm (0.2 to ₂ slm). At this time, the partial pressure of the O ₂ gas in the processing chamber 201 is set to a pressure in the range of 6 to 2940 Pa. The time for exposing the wafer 200 to the O ₂ gas, that is, the gas supply time (irradiation time) is, for example, a time within a range of 1 to 120 seconds. At this time, the temperature of the heater 207 is set to a temperature at which the temperature of the wafer 200 is in the range of 300 to 650 ° C., as in Steps 1 to 3. O ₂ gas is thermally activated under the conditions as described above. Note that, when the O ₂ gas is activated and supplied with heat, a soft reaction can be caused, and the later-described oxidation can be performed softly.

At this time, the gas flowing in the processing chamber 201 is a thermally activated O ₂ gas, and no HCD gas, C ₃ H ₆ gas, or NH ₃ gas is flowing in the processing chamber 201. Therefore, the O ₂ gas does not cause a gas phase reaction, and the activated O ₂ gas is generated from the silicon-containing layer (fourth layer) formed on the SiCN layer (third layer) in Step 4. Reacts with at least some. As a result, the silicon-containing layer is thermally oxidized by non-plasma and is changed into a fifth layer containing silicon and oxygen, that is, a silicon oxide layer (SiO ₂ layer, hereinafter, also simply referred to as SiO layer) ( Modified). As a result, a silicon oxycarbonitride layer (SiOCN layer) formed by laminating an SiO layer on the SiCN layer is formed. At this time, the activated O ₂ gas may be reacted not only with at least a part of the silicon-containing layer but also with at least a part of the SiCN layer as a lower layer thereof. That is, at least a part of the SiCN layer which is the lower layer of the silicon-containing layer may be thermally oxidized by non-plasma.

  At this time, the oxidation reaction of the silicon-containing layer is not saturated. For example, when a silicon layer having several atomic layers is formed in step 4, at least a part of the surface layer (one atomic layer on the surface) is oxidized. In this case, the oxidation is performed under the condition that the oxidation reaction of the silicon layer is unsaturated so that the entire silicon layer is not oxidized. Although several layers from the surface layer of the silicon layer can be oxidized depending on conditions, it is preferable to oxidize only the surface layer because the controllability of the composition ratio of the SiOCN film can be improved. Further, for example, when a silicon layer having one atomic layer or less than one atomic layer is formed in step 4, a part of the surface layer is similarly oxidized. Also in this case, the oxidation is performed under the condition that the oxidation reaction of the silicon layer is unsaturated so as not to oxidize the entire silicon layer. At this time, even when at least a part of the SiCN layer, which is the lower layer of the silicon-containing layer, is oxidized, the oxidation reaction of the SiCN layer is not saturated. In this case, the oxidation is performed under conditions where the oxidation reaction of the SiCN layer is unsaturated so that the entire SiCN layer is not oxidized.

  In order to unsaturate the oxidation reaction of the silicon-containing layer (fourth layer) or the SiCN layer (third layer) which is the lower layer, the processing conditions in step 5 may be the above-described processing conditions. Further, by setting the processing condition in step 5 as the next processing condition, it becomes easy to make the oxidation reaction of the silicon-containing layer or the SiCN layer unsaturated.

Wafer temperature: 500-630 ° C
Processing chamber pressure: 133 to 2666 Pa
O ₂ gas partial pressure: 67-2515 Pa
O ₂ gas supply flow rate: 1000 to 5000 sccm
N ₂ gas supply flow rate: 300 to 1000 sccm
O ₂ gas supply time: 6 to 100 seconds

Thereafter, the valve 243d of the fourth gas supply pipe 232d is closed, and the supply of O ₂ gas is stopped. At this time, the APC valve 244 of the exhaust pipe 231 is kept open, the processing chamber 201 is evacuated by the vacuum pump 246, and the O ₂ gas remaining in the processing chamber 201 and contributing to oxidation is treated. Exclude from the chamber 201. At this time, the valve 243h is kept open and the supply of N ₂ gas into the processing chamber 201 is maintained. This enhances the effect of eliminating the unreacted or remaining O ₂ gas remaining in the processing chamber 201 from the processing chamber 201.

As the oxygen-containing gas, in addition to oxygen (O ₂ ) gas, water vapor (H ₂ O) gas, nitrogen monoxide (NO) gas, nitrous oxide (N ₂ O) gas, nitrogen dioxide (NO ₂ ) gas, Carbon oxide (CO) gas, carbon dioxide (CO ₂ ) gas, ozone (O ₃ ) gas, O ₂ gas + H ₂ gas, O ₃ gas + H ₂ gas, or the like may be used.

  By performing steps 1 to 5 described above as one cycle and performing this cycle a predetermined number of times (one or more times), the SiCN layer and the SiO layer are alternately stacked on the wafer 200, and silicon, carbon, nitrogen having a predetermined thickness are stacked. A thin film containing oxygen and oxygen, that is, a silicon oxycarbonitride film (SiOCN film) can be formed. The above cycle is preferably repeated a plurality of times.

  At this time, by controlling the processing conditions such as the pressure in the processing chamber 201 and the gas supply time in each step, the ratio of each element component in the SiOCN layer, that is, silicon component, oxygen component, carbon component, nitrogen component, that is, The silicon concentration, oxygen concentration, carbon concentration, and nitrogen concentration can be adjusted, and the composition ratio of the SiOCN film can be controlled.

  At this time, the composition ratio of the SiOCN film can also be controlled by controlling the thickness of at least one of the SiCN layer and the SiO layer. For example, if an SiCN layer having a thickness of several atomic layers and an SiO layer having a thickness of less than one atomic layer are alternately stacked, the ratio of the silicon component, nitrogen component, and carbon component to the oxygen component of the SiOCN film can be determined. It is possible to control in a rich direction (a ratio of oxygen component in a poor direction). For example, if an SiCN layer having a thickness of less than one atomic layer and an SiO layer having a thickness of several atomic layers are alternately stacked, the ratio of the silicon component and the oxygen component to the nitrogen component, carbon component of the SiOCN film Can be controlled in a rich direction (ratio of nitrogen component and carbon component in a poor direction). Depending on the processing conditions, the alternately laminated SiCN layer and SiO layer can be diffused.

When a film forming process for forming a SiOCN film having a predetermined composition and having a predetermined composition is performed, an inert gas such as N ₂ is supplied into the processing chamber 201 and exhausted, whereby the processing chamber 201 has an inert gas. (Purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).

  Thereafter, the seal cap 219 is lowered by the boat elevator 115 to open the lower end of the reaction tube 203, and the processed wafer 200 is supported by the boat 217 from the lower end of the reaction tube 203 to the outside of the reaction tube 203. The boat is unloaded (boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

(Second sequence)
Next, the second sequence of the present embodiment will be described. FIG. 5 is a diagram showing a film forming flow in the second sequence of the present embodiment. FIG. 6 is a diagram illustrating gas supply timings in the second sequence of the present embodiment.

  In the first sequence described above, steps 1 to 5 described above are defined as one cycle, and this cycle is performed once or more, whereby one SiCN layer and one SiO layer are alternately stacked on the wafer 200. An example in which a SiOCN film having a predetermined thickness is formed has been described.

  On the other hand, in the second sequence, steps 1 to 3 described above are set as one set, and this set is performed a predetermined number of times (one or more times) to form a SiCN layer having a predetermined thickness, and steps 4 to 5 are performed as 1 set. The process of forming a SiO layer having a predetermined thickness by performing the set a predetermined number of times (one or more times) as one set is performed on the wafer 200 by performing this cycle a predetermined number of times (one or more times). A SiOCN film having a predetermined thickness is formed by alternately laminating one or more SiCN layers and one or more SiO layers. That is, in the second sequence, one or more, for example, several SiCN layers and one or more, for example, several SiO layers are alternately stacked on the wafer 200 to form a SiOCN film having a predetermined thickness. To do.

More specifically, in the second sequence of the present embodiment,
A step of forming a silicon-containing layer on the wafer 200 by supplying a silicon-containing gas to the heated wafer 200 in the processing container, and a carbon-containing gas to the heated wafer 200 in the processing container. By supplying, a step of forming a carbon-containing layer on the silicon-containing layer to form a layer containing silicon and carbon, and supplying a nitrogen-containing gas to the heated wafer 200 in the processing container And a step of forming a silicon carbonitride layer by nitriding a layer containing silicon and carbon, and performing this set a predetermined number of times (x times), a silicon carbonitride layer having a predetermined thickness on the wafer 200 ( Forming a SiCN layer);
A step of forming a silicon-containing layer on the wafer 200 by supplying a silicon-containing gas to the heated wafer 200 in the processing container, and an oxygen-containing gas to the heated wafer 200 in the processing container. The step of forming the silicon oxide layer by oxidizing the silicon-containing layer by supplying is performed as a set a predetermined number of times (y times), whereby a silicon oxide layer (SiO2) having a predetermined thickness is formed on the wafer 200. Forming a layer),
, And performing this cycle a predetermined number of times (n times), a silicon oxycarbonitride film (SiOCN film) having a predetermined thickness formed by alternately laminating silicon carbonitride layers and silicon oxide layers on the wafer 200 ).
Even in this case, the above-described cycle is preferably repeated a plurality of times. Also in the second sequence of this embodiment, a CVD reaction occurs in the step of forming the silicon-containing layer in both the step of forming the silicon carbonitride layer and the step of forming the silicon oxide layer. A silicon-containing gas is supplied to the wafer 200 under conditions.

  The second sequence is different from the first sequence only in the number of times the SiCN layer forming process is performed (x) and the number of times the SiO layer forming process is performed (y), and other operations are the same as those in the first sequence. is there. That is, the opening / closing operation of each valve in the SiCN layer forming step and the SiO layer forming step in the second sequence, the processing conditions, the reaction to be generated, the layer to be formed, the residual gas removal method, the usable gas, etc. They are the same. Further, the wafer charge, boat load, pressure adjustment, temperature adjustment, wafer rotation, purge, inert gas replacement, return to atmospheric pressure, boat unload, and wafer discharge in the second sequence are performed in the same manner as those in the first sequence. The case where the number of times of performing the SiCN layer forming step (x) and the number of times of performing the SiO layer forming step (y) in the second sequence is one time (x = 1, y = 1) corresponds to the first sequence. To do.

  In FIG. 6, the above steps 1 to 3 are set as one set, and this set is performed twice. Then, steps 4 to 5 are set as one set, this set is performed once, this is set as one cycle, and this cycle is performed n times. Thus, an example is shown in which two SiCN layers and one SiO layer are alternately stacked on the wafer 200 to form a SiOCN film having a predetermined thickness.

  As described above, the above steps 1 to 3 are set as one set, and the set is performed a predetermined number of times (x times). Then, the steps 4 to 5 are set as a set and the set is performed a predetermined number of times (y times), and this is performed for one cycle. By performing this cycle a predetermined number of times (n times), the ratio of silicon component, carbon component and nitrogen component to the oxygen component of the SiOCN film, and the ratio of silicon component and oxygen component to the carbon component and nitrogen component Therefore, the controllability of the composition ratio of the SiOCN film can be further improved. For example, if five SiCN layers and one SiO layer are alternately stacked, the ratio of the silicon component, nitrogen component, and carbon component to the oxygen component of the SiOCN film becomes richer (the ratio of the oxygen component). Can be controlled in a poor direction). Further, for example, if one SiCN layer and five SiO layers are alternately laminated, the ratio of the nitrogen component, the silicon component to the carbon component, and the oxygen component of the SiOCN film in a rich direction (nitrogen component, The ratio of the carbon component can be controlled in a poor direction). That is, by controlling the number of layers of at least one of the SiCN layer and the SiO layer, that is, the number of sets (x, y), the composition ratio of the SiOCN film can be more precisely controlled. The combination of the number of sets (x, y) also enables a trace composition control that makes the ratio of the component of a specific element a trace amount (for example, several percent). By increasing the number of sets, the number of SiCN layers and SiO layers formed per cycle can be increased by the number of sets, the cycle rate can be improved, and the film formation rate can be improved. It is also possible.

(3) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

  According to the present embodiment, in the first sequence, steps 1 to 5 are set as one cycle, and this cycle is performed a predetermined number of times to form the SiOCN film having a predetermined film thickness. The SiOCN film can be formed. In the second sequence, steps 1 to 3 are set as a set, this set is performed a predetermined number of times, steps 4 to 5 are performed as a set, this set is performed a predetermined number of times, and this is set as one cycle, and this cycle is performed a predetermined number of times. Thus, since the SiOCN film having a predetermined thickness is formed, the SiOCN film having a predetermined composition and a predetermined thickness can be formed.

Further, according to the present embodiment, the SiCN layer is not directly oxidized, but the SiCN layer and the SiO layer are alternately laminated, and the SiOCN layer is formed by the laminating method. Therefore, the SiCN layer is directly oxidized. In this case, C and N can be prevented from desorbing from the SiCN layer. That is, since the bonding force of the Si—O bond is stronger than the bonding force of the Si—C bond or the Si—N bond in the SiCN layer, a Si—O bond is formed when the SiCN layer is directly oxidized. In the process, the Si—C bond and Si—N bond in the SiCN layer may break, and C and N that break the bond with Si may be desorbed. However, the deposition of the SiCN layer on the wafer and the deposition of the SiO layer on the SiCN layer are alternately performed, and the SiCCN layer and the SiO layer are alternately stacked to form the SiOCN layer. Thus, the SiOCN layer can be formed without directly oxidizing the SiCN layer, and it is possible to prevent the detachment of C and N from the SiCN layer. As a result, it is possible to prevent the C concentration and the N concentration in the SiOCN film from being lowered, to improve the controllability of the composition ratio control of the SiOCN film, and to further widen the composition ratio control window. .

  In the present embodiment, the oxidation treatment is performed on the laminated film of the silicon-containing layer and the SiCN layer in Step 5, but the silicon-containing layer formed on the SiCN layer in Step 4 is mainly used. The silicon-containing layer functions as an oxide block layer that blocks the oxidation of the SiCN layer. At this time, at least a part of the SiCN layer, which is the lower layer of the silicon-containing layer, can be oxidized, but even in this case, the oxidation of the SiCN layer is suppressed by the oxidation blocking effect of the silicon-containing layer, and the SiCN layer It becomes easy to make the oxidation reaction of the layer unsaturated, and it becomes possible to suppress the desorption of C and N from the SiCN layer.

  Further, when the SiCN layer is directly oxidized, it is necessary to stop the oxidation of the SiCN layer by the oxygen-containing gas with unsaturation in order to suppress the desorption of C and N from the SiCN layer. Since the silicon-containing layer formed on the SiCN layer in step 4 functions as an oxidation blocking layer that blocks the oxidation of the SiCN layer, the unsaturated region is not necessarily used for the oxidation of the silicon-containing layer with the oxygen-containing gas in step 5. It is also possible to use a saturation region. That is, it is possible to saturate the oxidation reaction of the silicon-containing layer while suppressing the desorption of C and N from the SiCN layer. At this time, at least a part of the SiCN layer, which is the lower layer of the silicon-containing layer, can be oxidized, but even in this case, the oxidation of the SiCN layer is suppressed by the oxidation blocking effect of the silicon-containing layer, and the SiCN layer It becomes easy to make the oxidation reaction of the layer unsaturated, and it becomes possible to suppress the desorption of C and N from the SiCN layer. That is, according to the present embodiment, it is possible to increase the oxidation power of the oxidation of the silicon-containing layer by the oxygen-containing gas in step 5 while suppressing the desorption of C and N from the SiCN layer, and more uniform oxidation treatment Is possible. As a result, it is possible to improve the in-wafer in-plane film thickness uniformity while improving the deposition rate of the SiOCN film.

  Further, according to the present embodiment, it is possible to form a SiOCN film having excellent wafer in-plane film thickness uniformity in both the first sequence and the second sequence. When the SiOCN film formed by the first sequence or the second sequence of the present embodiment is used as an insulating film, it is possible to provide uniform performance within the surface of the SiOCN film, thereby improving the performance and production of the semiconductor device. It becomes possible to contribute to the improvement of the yield.

  Further, according to the present embodiment, by controlling processing conditions such as pressure in the processing chamber and gas supply time in each step of each sequence, each element component in the SiOCN film, that is, silicon component, oxygen component, carbon component, The ratio of the nitrogen component, that is, the silicon concentration, oxygen concentration, carbon concentration, and nitrogen concentration can be adjusted, and the composition ratio of the SiOCN film can be controlled.

  By the way, in the case of the conventional CVD method, a plurality of types of gases including a plurality of elements constituting a thin film to be formed are supplied simultaneously. In this case, in order to control the composition ratio of the thin film to be formed, for example, it is conceivable to control the gas supply flow rate ratio during gas supply. In this case, the composition ratio of the thin film to be formed cannot be controlled by controlling the supply conditions such as the substrate temperature at the time of gas supply, the pressure in the processing chamber, and the gas supply time.

  In the case of the ALD method, a plurality of types of gases including a plurality of elements constituting the thin film to be formed are alternately supplied. In this case, in order to control the composition ratio of the thin film to be formed, for example, it is conceivable to control the gas supply flow rate and the gas supply time when supplying each gas. In the case of the ALD method, the supply of the raw material gas is intended for adsorption saturation of the raw material gas onto the substrate surface, and thus pressure control in the processing chamber is not necessary. That is, the adsorption saturation of the raw material gas occurs below a predetermined pressure at which the raw material gas is adsorbed with respect to the reaction temperature. Can be realized. Therefore, normally, when forming a film by the ALD method, the pressure in the processing chamber is a pressure left to the exhaust capacity of the substrate processing apparatus with respect to the gas supply amount. When the pressure in the processing chamber is changed, it is conceivable that chemical adsorption of the source gas on the substrate surface may be hindered, or a CVD reaction may be approached, and film formation by the ALD method cannot be performed appropriately. In addition, since an ALD reaction (adsorption saturation, surface reaction) is repeated in order to form a thin film with a predetermined film thickness by the ALD method, if each ALD reaction is not sufficiently performed until each ALD reaction is saturated, deposition is performed. It is conceivable that the sufficient deposition rate cannot be obtained. Therefore, in the case of the ALD method, it is difficult to consider controlling the composition ratio of the thin film by controlling the pressure in the processing chamber.

  On the other hand, in this embodiment, in any sequence, the thin film composition ratio is controlled by controlling the pressure in the processing chamber and the gas supply time in each step. Note that the thin film composition ratio is preferably controlled by controlling the pressure in the processing chamber or the pressure and the gas supply time.

  By controlling the pressure in the processing chamber in each step, when the composition ratio of the thin film is controlled, the influence of machine differences between different substrate processing apparatuses can be reduced. That is, the composition ratio of the thin film can be similarly controlled between different substrate processing apparatuses by the same control. In this case, if the gas supply time in each step is also controlled, the composition ratio of the thin film can be finely adjusted, and the controllability of the thin film composition ratio control can be improved. In addition, by controlling the pressure in the processing chamber in each step, the composition ratio of the thin film can be controlled while increasing the film formation rate. That is, by controlling the pressure in the processing chamber, for example, the composition ratio of the thin film can be controlled while increasing the growth rate of the silicon-containing layer formed in step 1 in each sequence. As described above, according to the present embodiment, not only can the composition ratio of the thin film be controlled in the same manner between different substrate processing apparatuses, but also the controllability of the composition ratio control of the thin film can be improved. Can also improve the film formation rate, that is, the productivity.

  On the other hand, when the composition ratio of the thin film is controlled by controlling the gas supply flow rate and the gas supply time in each step, for example, in the film formation by the ALD method, the influence of the machine difference between different substrate processing apparatuses becomes large. That is, even if the same control is performed between different substrate processing apparatuses, the composition ratio of the thin film cannot be controlled similarly. For example, even if the gas supply flow rate and the gas supply time are set to the same flow rate value and time between different substrate processing apparatuses, the pressure in the processing chamber does not become the same pressure value due to machine differences. Therefore, in this case, the pressure in the processing chamber changes for each substrate processing apparatus, and a desired composition ratio control cannot be similarly performed between different substrate processing apparatuses. Furthermore, it is conceivable that chemical pressure on the substrate surface of the source gas may be hindered or approach a CVD reaction by changing the pressure in the processing chamber for each substrate processing apparatus, and film formation by the ALD method is appropriately performed. Sometimes it becomes impossible.

  In addition, according to the present embodiment, since a silicon oxycarbonitride film having a predetermined composition can be formed, it becomes possible to control etching resistance, dielectric constant, and insulation resistance, which is more than that of a silicon nitride film (SiN film). However, it is possible to form a silicon insulating film having a low dielectric constant, excellent etching resistance, and excellent insulation resistance.

In Steps 2, 3, and 5 of the first sequence and the second sequence of the present embodiment, C ₃ H ₆ gas, NH ₃ gas, and O ₂ gas supplied into the processing chamber 201 are activated by heat, respectively. The wafer 200 is supplied. Thereby, the above-described reactions can be caused softly, and the formation of the carbon-containing layer, the nitriding treatment, and the oxidizing treatment can be easily performed with good controllability.

  Further, by using the silicon insulating film formed by the method of this embodiment as a side wall spacer, it is possible to provide a device forming technique with less leakage current and excellent workability.

  Further, by using the silicon insulating film formed by the method of the present embodiment as an etch stopper, it is possible to provide a device forming technique with excellent workability.

  In addition, according to the present embodiment, an ideal stoichiometric silicon insulating film can be formed without using plasma. In addition, since the silicon insulating film can be formed without using plasma, it can be applied to a process that is concerned about plasma damage, such as a DDP SADP film.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

For example, the buffer chamber 237 may not be provided in the processing chamber 201, and the O ₂ gas may be directly supplied into the processing chamber 201 from the fourth nozzle 249d. In this case, the O ₂ gas can be directly supplied from the fourth nozzle 249d toward the wafer 200 by directing the gas supply hole 250d of the fourth nozzle 249d toward the center of the reaction tube 203. is there. Alternatively, only the buffer chamber 237 may be provided without providing the fourth nozzle 249d.

In addition, for example, the C ₃ H ₆ gas, NH ₃ gas, and O ₂ gas supplied into the processing chamber 201 are not limited to be activated by heat, but may be activated using, for example, plasma. In this case, for example, each gas may be plasma-excited using a plasma source as the above-described plasma generator.

Further, for example, in step 5 of the first sequence and the second sequence, the hydrogen-containing gas may be supplied together with the oxygen-containing gas. By supplying an oxygen-containing gas and a hydrogen-containing gas into a processing vessel under a heated (under reduced pressure) atmosphere less than atmospheric pressure, the oxygen-containing gas and the hydrogen-containing gas react in the processing vessel. Oxidized species containing oxygen such as atomic oxygen (O) is generated, and oxidation can be performed by this oxidized species. In this case, the oxidizing power, that is, the oxidation rate can be increased and the oxidation time can be shortened as compared with the case where the oxygen-containing gas is oxidized alone. This oxidation treatment is performed in a non-plasma reduced pressure atmosphere. As the hydrogen-containing gas, for example, hydrogen (H ₂ ) gas, ammonia (NH ₃ ) gas, methane (CH ₄ ) gas, or the like can be used. In this case, the hydrogen-containing gas is supplied from the above-described hydrogen-containing gas supply system.

  In the above-described embodiment, an example in which one or more SiCN layers are deposited on a wafer and then one or more SiO layers are deposited, and this is alternately repeated to form a SiOCN film by stacking the layers. However, the stacking order may be reversed. That is, after depositing one or more SiO layers on the wafer, one or more SiCN layers may be deposited, and this may be repeated alternately to form a SiOCN film by stacking the layers.

  In the above-described embodiment, an example in which one or more SiCN layers are deposited on a wafer and then one or more SiO layers are deposited, and this is alternately repeated to form a SiOCN film by stacking the layers. However, the SiOCN film may be formed by stacking different layers.

  For example, after depositing one or more SiOC layers on the wafer, one or more SiN layers may be deposited, and this may be repeated alternately to form a SiOCN film by stacking the layers. In this case, a silicon-containing gas, a carbon-containing gas, and an oxygen-containing gas are supplied into a processing container containing the wafer, thereby forming a SiOC layer having a predetermined thickness on the wafer, and in the processing container. By alternately supplying a silicon-containing gas and a nitrogen-containing gas to form a SiN layer having a predetermined thickness on the wafer, the SiOC layer and the SiN layer are alternately formed on the wafer. By laminating, a SiOCN film having a predetermined thickness is formed. Also in this case, the order of lamination may be reversed. That is, after depositing one or more SiN layers on the wafer, one or more SiOC layers may be deposited, and this may be repeated alternately to form a SiOCN film by stacking the layers.

  Further, for example, after depositing one or more SiON layers on the wafer, one or more SiC layers may be deposited, and this may be repeated alternately to form a SiOCN film by stacking the layers. In this case, a silicon-containing gas, a nitrogen-containing gas, and an oxygen-containing gas are supplied into a processing container containing the wafer, thereby forming a SiON layer having a predetermined thickness on the wafer, and in the processing container. By alternately supplying a silicon-containing gas and a carbon-containing gas to form a SiC layer having a predetermined thickness on the wafer, the SiON layer and the SiC layer are alternately formed on the wafer. By laminating, a SiOCN film having a predetermined thickness is formed. Also in this case, the order of lamination may be reversed. That is, after depositing one or more SiC layers on the wafer, one or more SiON layers may be deposited, and this may be repeated alternately to form a SiOCN film by stacking the layers.

  That is, after depositing one or more layers containing at least one element of O, C and N and Si on the wafer, elements other than the at least one element of O, C and N and Si are added. By depositing one or more layers to be included and repeating this alternately, a SiOCN film can be formed by stacking the layers. However, the present embodiment is more effective than the case of forming an SiOCN film by alternately laminating SiOC layers and SiN layers on a wafer or the case of forming an SiOCN film by alternately laminating SiON layers and SiC layers on a wafer. As in the embodiment, when the SiOCN film is formed by alternately laminating the SiCN layer and the SiO layer on the wafer, the SiOCN film can be formed with good controllability.

  In the above-described embodiment, an example in which one or more SiCN layers are deposited on a wafer and then one or more SiO layers are deposited, and this is alternately repeated to form a SiOCN film by stacking the layers. However, it is also possible to deposit a boron nitride layer, that is, a boron nitride layer (BN layer) instead of the SiO layer, and form a silicon boron carbonitride film (SiBCN film) instead of the SiOCN film. That is, the SiOCN film formation method (laminate method) in the above-described embodiment can also be applied to the SiBCN film formation. In this case, after depositing one or more SiCN layers on the wafer, one or more BN layers are deposited, and this is alternately repeated to form a SiBCN film by stacking the layers.

In this case, specifically,
By supplying a silicon-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated wafer 200 in the processing container, a silicon carbonitride layer (SiCN layer) having a predetermined thickness is formed on the wafer 200. Forming, and
Forming a boron nitride layer (BN layer) having a predetermined thickness on the wafer 200 by supplying a boron-containing gas and a nitrogen-containing gas to the heated wafer 200 in the processing chamber;
By alternately repeating the above, a silicon borocarbonitride film (SiBCN film) having a predetermined thickness is formed on the wafer 200 by alternately laminating silicon carbonitride layers and boronitride layers.

  FIGS. 7 and 8 show the film formation flow and gas supply timing of an example of a sequence in which the film formation by the first sequence of the above-described embodiment is applied to the film formation of the SiBCN film (hereinafter referred to as the first sequence of the application example). Show.

In the first sequence of applications,
A step (step 1) of forming a silicon-containing layer on the wafer 200 by supplying a silicon-containing gas to the heated wafer 200 in the processing container, and the heated wafer 200 in the processing container Supplying the carbon-containing gas to form a carbon-containing layer on the silicon-containing layer to form a layer containing silicon and carbon (step 2), and for the heated wafer 200 in the processing container A step of nitriding a layer containing silicon and carbon by supplying a nitrogen-containing gas to form a silicon carbonitride layer (SiCN layer) (step 3);
A step of forming a boron-containing layer on the wafer 200 by supplying a boron-containing gas to the heated wafer 200 in the processing container (step 4), and the heated wafer 200 in the processing container A step of nitriding the boron-containing layer by supplying a nitrogen-containing gas to form a boron nitride layer (BN layer) (step 5);
1 cycle, this cycle is performed a predetermined number of times (n times), whereby a silicon borocarbonitride film (SiBCN) having a predetermined thickness formed by alternately laminating silicon carbonitride layers and boronitride layers on the wafer 200. Film).

  9 and 10, an example of a sequence in which the film formation by the second sequence of the above-described embodiment is applied to the film formation of the SiBCN film (hereinafter referred to as the second sequence of the application example), the timing of gas supply. Respectively.

In the second sequence of applications,
A step (step 1) of forming a silicon-containing layer on the wafer 200 by supplying a silicon-containing gas to the heated wafer 200 in the processing container, and the heated wafer 200 in the processing container Supplying the carbon-containing gas to form a carbon-containing layer on the silicon-containing layer to form a layer containing silicon and carbon (step 2), and for the heated wafer 200 in the processing container The step of forming a silicon carbonitride layer by nitriding a layer containing silicon and carbon by supplying a nitrogen-containing gas (step 3), and performing this set a predetermined number of times (x times) Forming a silicon carbonitride layer (SiCN layer) of a predetermined thickness on 200;
A step of forming a boron-containing layer on the wafer 200 by supplying a boron-containing gas to the heated wafer 200 in the processing container (step 4), and the heated wafer 200 in the processing container A step of nitriding a boron-containing layer by supplying a nitrogen-containing gas to form a boronitride layer (step 5) is set as a set, and this set is performed a predetermined number of times (y times). Forming a boronitride layer (BN layer) having a thickness;
1 cycle, this cycle is performed a predetermined number of times (n times), whereby a silicon borocarbonitride film (SiBCN film) having a predetermined thickness formed by alternately laminating silicon carbonitride layers and boronitride layers on the wafer 200 ).

  In any case of the first sequence and the second sequence of the application example, the above-described cycle is preferably repeated a plurality of times. In either case of the first sequence or the second sequence of the application example, in the step of forming the silicon-containing layer, a silicon-containing gas is supplied to the wafer 200 under a condition in which a CVD reaction occurs, and a boron-containing layer is formed. In the step of forming, a boron-containing gas is supplied to the wafer 200 under a condition in which a CVD reaction occurs.

In the first sequence and the second sequence of the application example, for example, boron trichloride (BCl ₃ ) gas or diborane (B ₂ H ₆ ) gas can be used as the boron-containing gas. 7, 8, 9, and 10 show examples in which BCl ₃ gas is used as the boron-containing gas. The boron-containing gas is supplied from the above-described boron-containing gas supply system. The processing conditions for supplying the silicon-containing gas, the carbon-containing gas, and the nitrogen-containing gas may be the same as the processing conditions for supplying the silicon-containing gas, the carbon-containing gas, and the nitrogen-containing gas in the above-described embodiment, The processing conditions for supplying the boron-containing gas may be the same as the processing conditions for supplying the carbon-containing gas in the above-described embodiment. Note that, by supplying a boron-containing gas, a boron layer (B layer) or a chemical adsorption layer of a boron-containing gas (for example, BCl ₃ gas) as a boron-containing layer on the SiCN layer, that is, a substance in which BCl ₃ gas is decomposed (BCl _x In this case, it is preferable that the adsorption state is an unsaturated state.

In order to bring the adsorption state on the SiCN layer such as BCl _x into an unsaturated state, the treatment conditions for supplying the boron-containing gas may be the above-described treatment conditions. By setting the processing conditions at the time of supply to the following processing conditions, it becomes easy to make the adsorption state on the SiCN layer of BCl _x or the like an unsaturated state.

Wafer temperature: 500-630 ° C
Processing chamber pressure: 133 to 2666 Pa
BCl ₃ gas partial pressure: 67-2515 Pa
BCl ₃ gas supply flow rate: 1000 to 5000 sccm
N ₂ gas supply flow rate: 300 to 1000 sccm
BCl ₃ gas supply time: 6 to 100 seconds

According to this application example, the same effect as the above-described embodiment can be obtained.
For example, in the first sequence or the second sequence of the application example, by controlling the processing conditions such as the pressure in the processing container and the gas supply time in each step, each element component in the SiBCN layer, that is, silicon component, boron component, The ratio of the carbon component and the nitrogen component, that is, the silicon concentration, boron concentration, carbon concentration, and nitrogen concentration can be adjusted, and the composition ratio of the SiBCN film can be controlled.

  In addition, for example, in the first sequence or the second sequence of the application example, the composition ratio of the SiBCN film can be controlled by controlling the thickness of at least one of the SiCN layer and the BN layer. For example, if a SiCN layer having a thickness of several atomic layers and a BN layer having a thickness of less than one atomic layer are alternately stacked, the ratio of the silicon component, the nitrogen component, and the carbon component to the boron component of the SiBCN film is determined. It is possible to control in a rich direction (a ratio of boron component in a poor direction). Further, for example, if an SiCN layer having a thickness of less than one atomic layer and a BN layer having a thickness of several atomic layers are alternately stacked, the ratio of the silicon component and the boron component to the nitrogen component, carbon component of the SiBCN film Can be controlled in a rich direction (ratio of nitrogen component and carbon component in a poor direction). Depending on the processing conditions, the alternately laminated SiCN layers and BN layers can be interdiffused.

  In addition, for example, in the second sequence of the application example, the composition ratio of the SiBCN film is more precisely controlled by controlling the number of layers of at least one of the SiCN layer and the BN layer, that is, the number of sets (x, y). It can also be controlled. For example, if five SiCN layers and two BN layers are alternately stacked, the ratio of silicon component, nitrogen component, and carbon component to the boron component of the SiBCN film is increased in a rich direction (ratio of boron component). Can be controlled in a poor direction). For example, if two SiCN layers and five BN layers are alternately stacked, the ratio of the nitrogen component, the silicon component to the carbon component, and the boron component of the SiBCN film in a rich direction (nitrogen component, The ratio of the carbon component can be controlled in a poor direction). Furthermore, by combining the number of sets (x, y), it is possible to control the composition of a trace element so that the ratio of the component of a specific element is a trace quantity (for example, several%). In addition, by increasing the number of each set, the number of SiCN layers and BN layers formed per cycle can be increased by the number of sets, the cycle rate can be improved, and the film formation rate can be improved. It is also possible to make it.

  Further, for example, in the above-described embodiment, an example in which a silicon-based insulating film (SiOCN film) containing silicon as a semiconductor element is formed as the oxycarbonitride film has been described. However, in the present invention, for example, titanium (Ti), zirconium A metal thin film containing a metal element such as (Zr), hafnium (Hf), tantalum (Ta), aluminum (Al), molybdenum (Mo), tungsten (W), gallium (Ga), or germanium (Ge) is formed. It can also be applied to cases.

  That is, the present invention provides, for example, titanic acid carbonitride film (TiOCN film), zirconium acid carbonitride film (ZrOCN film), hafnium acid carbonitride film (HfOCN film), tantalum acid carbonitride film (TaOCN film), aluminum acid Carbonitride film (AlOCN film), Molybdate oxycarbonitride film (MoOCN film), Tungsten acid carbonitride film (WOCN film), Gallium oxycarbonitride film (GaOCN film), Germanium oxycarbonitride film (GeOCN film), and these The present invention can also be applied to the case of forming a metal oxycarbonitride film in which these are combined or mixed.

  In this case, instead of the silicon source gas in the above embodiment, titanium source gas, zirconium source gas, hafnium source gas, tantalum source gas, aluminum source gas, molybdenum source gas, tungsten source gas, gallium source gas, germanium source gas Using a metal source gas (metal element-containing gas) such as the above, film formation can be performed by the same sequence (first sequence and second sequence) as in the above-described embodiment.

That is, in this case, for example, in the first sequence,
A step (Step 1) of forming a metal element-containing layer on the wafer 200 by supplying a metal element-containing gas to the heated wafer 200 in the processing container, and the heated wafer 200 in the processing container A step of forming a carbon-containing layer on the metal element-containing layer by supplying a carbon-containing gas to form a layer containing the metal element and carbon (step 2), and a heated wafer in the processing vessel A step of nitriding a layer containing a metal element and carbon by supplying a nitrogen-containing gas to 200 (step 3);
By supplying a metal element-containing gas to the heated wafer 200 in the processing container, a step of forming a metal element-containing layer on the wafer 200 (step 4), and to the heated wafer 200 in the processing container On the other hand, by supplying an oxygen-containing gas, the step of oxidizing the metal element-containing layer to form a metal oxide layer (step 5);
As a cycle, this cycle is repeated a predetermined number of times (n times) to form a metal oxycarbonitride film having a predetermined thickness on the wafer 200, in which metal carbonitride layers and metal oxide layers are alternately laminated. To do.

In this case, for example, in the second sequence,
A step (Step 1) of forming a metal element-containing layer on the wafer 200 by supplying a metal element-containing gas to the heated wafer 200 in the processing container, and the heated wafer 200 in the processing container A step of forming a carbon-containing layer on the metal element-containing layer by supplying a carbon-containing gas to form a layer containing the metal element and carbon (step 2), and a heated wafer in the processing vessel The step of supplying a nitrogen-containing gas to 200 to form a metal carbonitride layer by nitriding a layer containing a metal element and carbon (step 3) is set a predetermined number of times (x times). A step of forming a metal carbonitriding layer having a predetermined thickness on the wafer 200,
By supplying a metal element-containing gas to the heated wafer 200 in the processing container, a step of forming a metal element-containing layer on the wafer 200 (step 4), and to the heated wafer 200 in the processing container On the other hand, by supplying an oxygen-containing gas to oxidize the metal element-containing layer to form a metal oxide layer (step 5), the wafer 200 is obtained by performing this set a predetermined number of times (y times). Forming a metal oxide layer having a predetermined thickness on the surface;
As a cycle, by performing this cycle a predetermined number of times (n times), a metal oxycarbonitride film having a predetermined thickness formed by alternately laminating metal carbonitride layers and metal oxide layers on the wafer 200 is formed. .

  In any case of the first sequence and the second sequence, the above-described cycle is preferably repeated a plurality of times. In either case of the first sequence or the second sequence, in the step of forming the metal element-containing layer, the metal element-containing gas is supplied to the wafer 200 under a condition in which a CVD reaction occurs.

For example, in the case of forming a TiOCN film as the metal oxycarbonitride film, tetrakisethylmethylaminotitanium (Ti [N (C ₂ H ₅ ) (CH ₃ )] ₄ , abbreviation: TEMAT), tetrakis as a raw material containing Ti Organic raw materials such as dimethylaminotitanium (Ti [N (CH ₃ ) ₂ ] ₄ , abbreviation: TDMAT), tetrakisdiethylaminotitanium (Ti [N (C ₂ H ₅ ) ₂ ] ₄ , abbreviation: TDEAT), and titanium tetrachloride An inorganic raw material such as (TiCl ₄ ) can be used. As the carbon-containing gas, nitrogen-containing gas, and oxygen-containing gas, the same gas as that of the above-described embodiment can be used. The processing conditions at this time can be the same processing conditions as in the above-described embodiment, for example. The wafer temperature is, for example, a temperature within a range of 100 to 500 ° C., and the processing chamber pressure is, for example, 1 to 1000 Pa. It is more preferable to set the pressure within the range.

For example, when a ZrOCN film is formed as the metal oxycarbonitride film, tetrakisethylmethylaminozirconium (Zr [N (C ₂ H ₅ ) (CH ₃ )] ₄ , abbreviation: TEMAZ), Organic raw materials such as tetrakisdimethylaminozirconium (Zr [N (CH ₃ ) ₂ ] ₄ , abbreviation: TDMAZ), tetrakisdiethylaminozirconium (Zr [N (C ₂ H ₅ ) ₂ ] ₄ , abbreviation: TDAZ), zirconium tetra An inorganic raw material such as chloride (ZrCl ₄ ) can be used. As the carbon-containing gas, nitrogen-containing gas, and oxygen-containing gas, the same gas as that of the above-described embodiment can be used. Note that the processing conditions at this time can be the same processing conditions as in the above-described embodiment, for example. It is more preferable to set the pressure within the range.

For example, in the case of forming an HfOCN film as the metal oxycarbonitride film, tetrakisethylmethylaminohafnium (Hf [N (C ₂ H ₅ ) (CH ₃ )] ₄ , abbreviation: TEMAH) is used as a raw material containing Hf. Organic raw materials such as tetrakisdimethylaminohafnium (Hf [N (CH ₃ ) ₂ ] ₄ , abbreviation: TDMAH), tetrakisdiethylaminohafnium (Hf [N (C ₂ H ₅ ) ₂ ] ₄ , abbreviation: TDEAH), and hafnium tetra An inorganic raw material such as chloride (HfCl ₄ ) can be used. As the carbon-containing gas, nitrogen-containing gas, and oxygen-containing gas, the same gas as that of the above-described embodiment can be used. Note that the processing conditions at this time can be the same processing conditions as in the above-described embodiment, for example. It is more preferable to set the pressure within the range.

Further, for example, when a TaOCN film is formed as a metal oxycarbonitride film, as a raw material containing Ta, pentaethoxytantalum (Ta (OC ₂ H ₅ ) ₅ , abbreviation: PET), trisdiethylamino tertiary butyliminotantalum (Ta Organic raw materials such as (NC (CH ₃ ) ₃ ) (N (C ₂ H ₅ ) ₂ ) ₃ , abbreviation: TBTDET), and inorganic raw materials such as tantalum pentachloride (TaCl ₅ ) and tantalum pentafluoride (TaF ₅ ) Can be used. As the carbon-containing gas, nitrogen-containing gas, and oxygen-containing gas, the same gas as that of the above-described embodiment can be used. The processing conditions at this time can be the same processing conditions as in the above-described embodiment, for example. The wafer temperature is, for example, a temperature within a range of 100 to 500 ° C., and the processing chamber pressure is, for example, 1 to 1000 Pa. It is more preferable to set the pressure within the range.

For example, when an AlOCN film is formed as the metal oxycarbonitride film, an organic material such as trimethylaluminum (Al (CH ₃ ) ₃ , abbreviation: TMA), trichloroaluminum (AlCl ₃ ), or the like is used as a material containing Al. Inorganic raw materials can be used. As the carbon-containing gas, nitrogen-containing gas, and oxygen-containing gas, the same gas as that of the above-described embodiment can be used. Note that the processing conditions at this time can be the same processing conditions as in the above-described embodiment, for example. It is more preferable to set the pressure within the range.

  Thus, the present invention can also be applied to the formation of a metal oxycarbonitride film, and even in this case, the same effects as those of the above-described embodiment can be obtained. That is, the present invention can be applied when forming an oxycarbonitride film containing a predetermined element such as a semiconductor element or a metal element.

  In the above-described embodiment, an example of forming a film using a batch-type substrate processing apparatus that processes a plurality of substrates at one time has been described. However, the present invention is not limited to this, and one or a few at a time. The present invention can also be suitably applied to the case of forming a film using a single-wafer type substrate processing apparatus that processes a single substrate.

  Moreover, the above-described embodiments, modifications, application examples, and the like can be used in appropriate combination.

  The present invention can also be realized by changing a process recipe of an existing substrate processing apparatus, for example. When changing a process recipe, the process recipe according to the present invention is installed in an existing substrate processing apparatus via a telecommunication line or a recording medium recording the process recipe, or input / output of the existing substrate processing apparatus It is also possible to operate the apparatus and change the process recipe itself to the process recipe according to the present invention.

(First embodiment)
The SiOCN film was formed while controlling the composition ratio by the first sequence according to the above-described embodiment, and the composition ratio of the SiOCN film and the in-plane film thickness uniformity were measured. HCD gas was used as the silicon-containing gas, C ₃ H ₆ gas was used as the carbon-containing gas, NH ₃ gas was used as the nitrogen-containing gas, and O ₂ gas was used as the oxygen-containing gas. The composition ratio of the SiOCN film was controlled by adjusting the pressure and gas supply time (irradiation time), which are factors controlling the composition ratio.

First, the processing chamber pressure and the C ₃ H ₆ gas supply time in the second step of the first sequence were adjusted to form a SiOCN film having a carbon concentration of about 8 atoms% on the wafer. The processing conditions at that time were set as follows.

<First sequence (reference processing conditions)>
(First step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
HCD gas supply flow rate: 0.2 slm
HCD gas irradiation time: 6 seconds (second step)
Processing room temperature: 630 ° C
Processing chamber pressure: 399 Pa (3 Torr)
C ₃ H ₆ gas supply flow rate: 1 slm
C ₃ H ₆ gas irradiation time: 12 seconds (third step)
Processing room temperature: 630 ° C
Processing chamber pressure: 866 Pa (6.5 Torr)
NH ₃ gas supply flow rate: 4.5 slm
NH ₃ gas irradiation time: 18 seconds (4th step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
HCD gas supply flow rate: 0.2 slm
HCD gas irradiation time: 6 seconds (5th step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
O ₂ gas supply flow rate: 1 slm
O ₂ gas irradiation time: 18 seconds

  Using this processing condition as a standard processing condition, an attempt was made to form a SiOCN film having a carbon concentration of about 12 atoms% by adjusting each processing condition.

  As a result, by setting the processing chamber pressure in the second step from 399 Pa (3 Torr) to 2394 Pa (18 Torr), a SiOCN film having a carbon concentration of about 12 atoms% is obtained, and the carbon ratio is higher than that of the SiOCN film formed under the standard processing conditions. It was confirmed that a high SiOCN film can be formed. That is, it was confirmed that the SiOCN film having a high carbon ratio can be formed by setting the processing chamber pressure in the second step higher than the processing chamber pressure in the reference processing conditions. It was also confirmed that the nitrogen concentration decreased as the carbon concentration increased. The processing conditions other than the processing chamber pressure in the second step were the same as the reference processing conditions. That is, the processing conditions at that time were set as follows.

<First sequence (C ₃ H ₆ gas supply pressure change)>
(First step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
HCD gas supply flow rate: 0.2 slm
HCD gas irradiation time: 6 seconds (second step)
Processing room temperature: 630 ° C
Processing chamber pressure: 2394 Pa (18 Torr)
C ₃ H ₆ gas supply flow rate: 1 slm
C ₃ H ₆ gas irradiation time: 12 seconds (third step)
Processing room temperature: 630 ° C
Processing chamber pressure: 866 Pa (6.5 Torr)
NH ₃ gas supply flow rate: 4.5 slm
NH ₃ gas irradiation time: 18 seconds (4th step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
HCD gas supply flow rate: 0.2 slm
HCD gas irradiation time: 6 seconds (5th step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
O ₂ gas supply flow rate: 1 slm
O ₂ gas irradiation time: 18 seconds

Also, by setting the C ₃ H ₆ gas irradiation time in the second step from 12 seconds to 72 seconds, a SiOCN film having a carbon concentration of about 12 atoms% can be obtained, which has a carbon ratio higher than that of the SiOCN film formed under the standard processing conditions. It was confirmed that a high SiOCN film can be formed. In other words, also it is longer than the C ₃ H ₆ gas irradiation time in the reference processing conditions the C ₃ H ₆ gas irradiation time in the second step, it was confirmed that it is possible to form a high carbon ratio SiOCN film. It was also confirmed that the nitrogen concentration decreased as the carbon concentration increased. The processing conditions other than the C ₃ H ₆ gas irradiation time in the second step were the same as the standard processing conditions. That is, the processing conditions at that time were set as follows.

<First sequence (C ₃ H ₆ gas irradiation time change)>
(First step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
HCD gas supply flow rate: 0.2 slm
HCD gas irradiation time: 6 seconds (second step)
Processing room temperature: 630 ° C
Processing chamber pressure: 399 Pa (3 Torr)
C ₃ H ₆ gas supply flow rate: 1 slm
C ₃ H ₆ gas irradiation time: 72 seconds (third step)
Processing room temperature: 630 ° C
Processing chamber pressure: 866 Pa (6.5 Torr)
NH ₃ gas supply flow rate: 4.5 slm
NH ₃ gas irradiation time: 18 seconds (4th step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
HCD gas supply flow rate: 0.2 slm
HCD gas irradiation time: 6 seconds (5th step)
Processing room temperature: 630 ° C
Processing chamber pressure: 133 Pa (1 Torr)
O ₂ gas supply flow rate: 1 slm
O ₂ gas irradiation time: 18 seconds

  At this time, the thickness uniformity within the wafer surface of each of the formed SiOCN films was ± 1.5% or less, and good results were obtained. The film thickness uniformity within the wafer surface indicates the degree of variation in the film thickness distribution within the wafer surface, and the smaller the value, the better the film thickness distribution uniformity within the wafer surface.

  As described above, according to this example, it was found that a SiOCN film having excellent in-plane film thickness uniformity can be formed. Then, it was found that when the SiOCN film according to the example is used as an insulating film, it is possible to provide a uniform performance within the surface of the SiOCN film and contribute to the improvement of the performance of the semiconductor device and the production yield.

(Second embodiment)
The SiOCN film was formed while controlling the composition ratio by the second sequence according to the above-described embodiment, and the composition ratio of the SiOCN film and the in-plane film thickness uniformity were measured. HCD gas was used as the silicon-containing gas, C ₃ H ₆ gas was used as the carbon-containing gas, NH ₃ gas was used as the nitrogen-containing gas, and O ₂ gas was used as the oxygen-containing gas. The processing conditions in each step are the same processing conditions as the processing conditions in each step of the reference processing conditions in the first embodiment described above. The composition ratio control of the SiOCN film was performed by adjusting the number of sets in the second sequence, that is, the number of sets (x) in the SiCN layer forming process and the number of sets (y) in the SiO layer forming process.

  As a result, by setting the number of sets (x) of the SiCN layer forming process in the second sequence to 2 times and the number of sets (y) of the SiO layer forming process to 1 (x = 2, y = 1), the carbon concentration It was confirmed that a SiOCN film having a carbon ratio higher than that of the SiOCN film formed by the first embodiment, that is, the first sequence (reference processing conditions) can be obtained. A case (x = 1, y = 1) in which the number of sets (x) in the SiCN layer forming process is set to 1 and the number of sets (y) in the SiO layer forming process is set to 1 corresponds to the first sequence. . That is, by setting the number of sets (x) of the SiCN layer forming process in the second sequence to be larger than the number of executions (one time) per cycle of the SiCN layer forming process in the first sequence, the SiOCN film having a high carbon ratio It was confirmed that the formation of was possible. It was also confirmed that the nitrogen concentration decreased as the carbon concentration increased. At this time, the thickness uniformity in the wafer surface of the formed SiOCN film was ± 1.5% or less, and it was confirmed that good results were obtained.

  As described above, according to this example, it was found that a SiOCN film having excellent in-plane film thickness uniformity can be formed. Then, it was found that when the SiOCN film according to the example is used as an insulating film, it is possible to provide a uniform performance within the surface of the SiOCN film and contribute to the improvement of the performance of the semiconductor device and the production yield.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of
Forming a predetermined thickness of an oxide layer containing a predetermined element on the substrate by supplying a predetermined element-containing gas and an oxygen-containing gas to the heated substrate in the processing container; By alternately repeating the above, there is provided a method of manufacturing a semiconductor device including a step of forming a predetermined thickness of an oxycarbonitride film in which the carbonitride layers and the oxide layers are alternately stacked on the substrate. The

(Appendix 2)
A method of manufacturing a semiconductor device according to appendix 1, preferably,
In the step of forming the carbonitride layer, the set includes a step of supplying a predetermined element-containing gas, a step of supplying a carbon-containing gas, and a step of supplying a nitrogen-containing gas to the substrate. Is performed a predetermined number of times,
In the step of forming the oxide layer, the step of supplying the predetermined element-containing gas and the step of supplying the oxygen-containing gas to the substrate are performed as a set a predetermined number of times.

(Appendix 3)
A method of manufacturing a semiconductor device according to appendix 2, preferably,
In the step of forming the carbonitride layer, a predetermined element-containing gas is supplied to the substrate, so that a predetermined element-containing layer is formed on the substrate, and a carbon-containing gas is supplied to the substrate. A step of forming a carbon-containing layer on the predetermined element-containing layer to form a layer containing the predetermined element and carbon, and supplying a nitrogen-containing gas to the substrate, whereby the predetermined element and carbon Forming a carbonitride layer containing a predetermined element by nitriding a layer containing
In the step of forming the oxide layer, by supplying a predetermined element-containing gas to the substrate, a step of forming the predetermined element-containing layer on the substrate and supplying an oxygen-containing gas to the substrate The step of oxidizing the predetermined element-containing layer to form an oxide layer containing the predetermined element is performed as a set a predetermined number of times.

(Appendix 4)
A method for manufacturing a semiconductor device according to appendix 3, preferably,
In the step of forming the predetermined element-containing layer, a continuous deposition layer of the predetermined element, a discontinuous deposition layer of the predetermined element, and a continuous chemistry of the predetermined element-containing gas are formed on the substrate as the predetermined element-containing layer. At least one of an adsorption layer and a discontinuous chemical adsorption layer of a predetermined element-containing gas is formed.

(Appendix 5)
A method for manufacturing a semiconductor device according to appendix 3, preferably,
In the step of forming the predetermined element-containing layer, at least one of a continuous deposition layer of the predetermined element and a discontinuous deposition layer of the predetermined element is formed as the predetermined element-containing layer on the substrate. .

(Appendix 6)
A method for manufacturing a semiconductor device according to any one of appendices 3 to 5, preferably,
In the step of forming the layer containing the predetermined element and carbon, a discontinuous chemical adsorption layer of a carbon-containing gas is formed as the carbon-containing layer on the predetermined element-containing layer.

(Appendix 7)
A method for manufacturing a semiconductor device according to any one of appendices 3 to 6, preferably,
In the step of forming the carbonitriding layer, the layer containing the predetermined element and carbon is thermally nitrided under a condition that the nitriding reaction by the nitrogen-containing gas of the layer containing the predetermined element and carbon is unsaturated.

(Appendix 8)
A method of manufacturing a semiconductor device according to any one of appendices 3 to 7, preferably,
In the step of forming the oxide layer, the predetermined element-containing layer is thermally oxidized under a condition in which an oxidation reaction of the predetermined element-containing layer with an oxygen-containing gas is unsaturated.

(Appendix 9)
A method of manufacturing a semiconductor device according to any one of appendices 3 to 8, preferably,
In the step of forming the predetermined element-containing layer, a predetermined element-containing gas is supplied to the substrate under a condition where a CVD reaction occurs.

(Appendix 10)
The method for manufacturing a semiconductor device according to any one of appendices 1 to 9, wherein the predetermined element is preferably a semiconductor element or a metal element.

(Appendix 11)
The method for manufacturing a semiconductor device according to any one of appendices 1 to 10, wherein the predetermined element is preferably silicon.

(Appendix 12)
According to another aspect of the invention,
This set is performed a predetermined number of times, with the step of supplying the predetermined element-containing gas, the step of supplying the carbon-containing gas, and the step of supplying the nitrogen-containing gas to the heated substrate in the processing container as one set. Forming a carbonitriding layer having a predetermined thickness containing a predetermined element on the substrate;
By performing this set a predetermined number of times on the substrate by supplying the predetermined element-containing gas to the heated substrate in the processing container and supplying the oxygen-containing gas as one set. Forming an oxide layer having a predetermined thickness containing a predetermined element;
By alternately repeating the above, there is provided a method of manufacturing a semiconductor device including a step of forming a predetermined thickness of an oxycarbonitride film in which the carbonitride layers and the oxide layers are alternately stacked on the substrate. The

(Appendix 13)
According to yet another aspect of the invention,
A process of supplying a predetermined element-containing gas, a process of supplying a carbon-containing gas, and a process of supplying a nitrogen-containing gas to the heated substrate in the processing container are performed on the substrate. Forming a carbonitriding layer having a predetermined thickness containing the elements;
A step of supplying a predetermined element-containing gas and a step of supplying an oxygen-containing gas to the heated substrate in the processing container and a predetermined thickness including the predetermined element on the substrate Forming an oxide layer;
By alternately repeating the above, there is provided a method of manufacturing a semiconductor device including a step of forming a predetermined thickness of an oxycarbonitride film in which the carbonitride layers and the oxide layers are alternately stacked on the substrate. The

(Appendix 14)
According to yet another aspect of the invention,
A step of forming a predetermined element-containing layer on the substrate by supplying a predetermined element-containing gas to the heated substrate in the processing container; and carbon containing the heated substrate in the processing container A step of forming a carbon-containing layer on the predetermined element-containing layer by supplying a gas to form a layer containing the predetermined element and carbon, and containing nitrogen with respect to the heated substrate in the processing vessel Nitriding the layer containing the predetermined element and carbon by supplying a gas to form a carbonitriding layer containing the predetermined element, and performing this set a predetermined number of times on the substrate Forming a carbonitriding layer having a predetermined thickness including:
A step of forming a predetermined element-containing layer on the substrate by supplying a predetermined element-containing gas to the heated substrate in the processing container; and the heated substrate in the processing container A step of oxidizing the predetermined element-containing layer by supplying an oxygen-containing gas to form an oxide layer containing the predetermined element, and performing the set a predetermined number of times to include the predetermined element on the substrate Forming an oxide layer having a predetermined thickness;
By alternately repeating the above, there is provided a method of manufacturing a semiconductor device including a step of forming a predetermined thickness of an oxycarbonitride film in which the carbonitride layers and the oxide layers are alternately stacked on the substrate. The

(Appendix 15)
According to another aspect of the invention,
A step of forming a predetermined element-containing layer on the substrate by supplying a predetermined element-containing gas to the heated substrate in the processing container; and carbon containing the heated substrate in the processing container A step of forming a carbon-containing layer on the predetermined element-containing layer by supplying a gas to form a layer containing the predetermined element and carbon, and containing nitrogen with respect to the heated substrate in the processing vessel Supplying a gas to form a carbonitriding layer containing the predetermined element by nitriding the layer containing the predetermined element and carbon;
A step of forming a predetermined element-containing layer on the substrate by supplying a predetermined element-containing gas to the heated substrate in the processing container; and the heated substrate in the processing container Supplying an oxygen-containing gas to oxidize the predetermined element-containing layer to form an oxide layer containing the predetermined element;
By alternately repeating the above, there is provided a method of manufacturing a semiconductor device including a step of forming a predetermined thickness of an oxycarbonitride film in which the carbonitride layers and the oxide layers are alternately stacked on the substrate. The

(Appendix 16)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of
Forming a predetermined thickness of an oxide layer containing a predetermined element on the substrate by supplying a predetermined element-containing gas and an oxygen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, there is provided a substrate processing method including a step of forming an oxycarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the oxide layer on the substrate.

(Appendix 17)
According to yet another aspect of the invention,
A processing container for containing a substrate;
A heater for heating the substrate in the processing container;
A predetermined element-containing gas supply system for supplying a predetermined element-containing gas to the substrate in the processing container;
A carbon-containing gas supply system for supplying a carbon-containing gas to the substrate in the processing container;
A nitrogen-containing gas supply system for supplying a nitrogen-containing gas to the substrate in the processing vessel;
An oxygen-containing gas supply system for supplying an oxygen-containing gas to the substrate in the processing container;
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a predetermined element-containing gas and an oxygen-containing gas are supplied to the heated substrate in the processing container, thereby forming an oxide layer having a predetermined thickness containing the predetermined element on the substrate. The heater, the predetermined treatment, and the like so as to form an oxycarbonitride film having a predetermined thickness on which the carbonitride layer and the oxide layer are alternately stacked on the substrate. A control unit for controlling the element-containing gas supply system, the carbon-containing gas supply system, the nitrogen-containing gas supply system, and the oxygen-containing gas supply system;
A substrate processing apparatus is provided.

(Appendix 18)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container of the substrate processing apparatus, the carbon having a predetermined thickness containing the predetermined element on the substrate. Forming a nitride layer;
A procedure for forming a predetermined thickness of an oxide layer containing a predetermined element on the substrate by supplying a predetermined element-containing gas and an oxygen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, a procedure for forming an oxycarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the oxide layer on the substrate;
A program for causing a computer to execute is provided.

(Appendix 19)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container of the substrate processing apparatus, the carbon having a predetermined thickness containing the predetermined element on the substrate. Forming a nitride layer;
A procedure for forming a predetermined thickness of an oxide layer containing a predetermined element on the substrate by supplying a predetermined element-containing gas and an oxygen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, a procedure for forming an oxycarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the oxide layer on the substrate;
A computer-readable recording medium on which a program for causing a computer to execute is recorded is provided.

(Appendix 20)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of
Forming a boron nitride layer having a predetermined thickness on the substrate by supplying a boron-containing gas and a nitrogen-containing gas to the heated substrate in the processing vessel;
A method of manufacturing a semiconductor device including a step of forming a borocarbonitride film having a predetermined thickness formed by alternately stacking the carbonitride layer and the boronitride layer on the substrate by alternately repeating.

(Appendix 21)
According to yet another aspect of the invention,
This set is performed a predetermined number of times, with the step of supplying the predetermined element-containing gas, the step of supplying the carbon-containing gas, and the step of supplying the nitrogen-containing gas to the heated substrate in the processing container as one set. Forming a carbonitriding layer having a predetermined thickness containing a predetermined element on the substrate;
A step of supplying a boron-containing gas and a step of supplying a nitrogen-containing gas to the heated substrate in the processing container are set as a set, and this set is performed a predetermined number of times to obtain a predetermined thickness on the substrate. Forming a boronitride layer;
By alternately repeating the above, a method of manufacturing a semiconductor device including a step of forming a borocarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the boronitride layer on the substrate is provided. Is done.

(Appendix 22)
According to yet another aspect of the invention,
A predetermined element is formed on the substrate by performing a step of supplying a predetermined element-containing gas, a step of supplying a carbon-containing gas, and a step of supplying a nitrogen-containing gas to the heated substrate in the processing container. Forming a carbonitriding layer having a predetermined thickness including:
A boron-containing layer having a predetermined thickness is formed on the substrate by performing a step of supplying a boron-containing gas and a step of supplying a nitrogen-containing gas to the heated substrate in the processing container. Process,
By alternately repeating the above, a method of manufacturing a semiconductor device including a step of forming a borocarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the boronitride layer on the substrate is provided. Is done.

(Appendix 23)
According to yet another aspect of the invention,
A step of forming a predetermined element-containing layer on the substrate by supplying a predetermined element-containing gas to the heated substrate in the processing container; and carbon containing the heated substrate in the processing container A step of forming a carbon-containing layer on the predetermined element-containing layer by supplying a gas to form a layer containing the predetermined element and carbon, and containing nitrogen with respect to the heated substrate in the processing vessel Nitriding the layer containing the predetermined element and carbon by supplying a gas to form a carbonitriding layer containing the predetermined element, and performing this set a predetermined number of times on the substrate Forming a carbonitriding layer having a predetermined thickness including:
Forming a boron-containing layer on the substrate by supplying a boron-containing gas to the heated substrate in the processing vessel; and containing nitrogen in the heated substrate in the processing vessel The step of forming a boron nitride layer by nitriding the boron-containing layer by supplying a gas is performed as a set, and a boron nitride layer having a predetermined thickness is formed on the substrate by performing this set a predetermined number of times. Process,
By alternately repeating the above, a method of manufacturing a semiconductor device including a step of forming a borocarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the boronitride layer on the substrate is provided. Is done.

(Appendix 24)
According to another aspect of the invention,
A step of forming a predetermined element-containing layer on the substrate by supplying a predetermined element-containing gas to the heated substrate in the processing container; and carbon containing the heated substrate in the processing container A step of forming a carbon-containing layer on the predetermined element-containing layer by supplying a gas to form a layer containing the predetermined element and carbon, and containing nitrogen with respect to the heated substrate in the processing vessel Supplying a gas to form a carbonitriding layer containing the predetermined element by nitriding the layer containing the predetermined element and carbon;
Forming a boron-containing layer on the substrate by supplying a boron-containing gas to the heated substrate in the processing vessel; and containing nitrogen in the heated substrate in the processing vessel Nitriding the boron-containing layer by supplying a gas to form a boron nitride layer;
By alternately repeating the above, a method of manufacturing a semiconductor device including a step of forming a borocarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the boronitride layer on the substrate is provided. Is done.

(Appendix 25)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of
Forming a boron nitride layer having a predetermined thickness on the substrate by supplying a boron-containing gas and a nitrogen-containing gas to the heated substrate in the processing vessel;
By alternately repeating the above, there is provided a substrate processing method including a step of forming a borocarbonitride film having a predetermined thickness formed by alternately laminating the carbonitride layer and the boronitride layer on the substrate. .

(Appendix 26)
According to yet another aspect of the invention,
A processing container for containing a substrate;
A heater for heating the substrate in the processing container;
A predetermined element-containing gas supply system for supplying a predetermined element-containing gas to the substrate in the processing container;
A carbon-containing gas supply system for supplying a carbon-containing gas to the substrate in the processing container;
A nitrogen-containing gas supply system for supplying a nitrogen-containing gas to the substrate in the processing vessel;
A boron-containing gas supply system for supplying a boron-containing gas to the substrate in the processing vessel;
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container, a carbonitriding layer having a predetermined thickness containing the predetermined element is formed on the substrate. And a process of forming a boron nitride layer having a predetermined thickness on the substrate by supplying a boron-containing gas and a nitrogen-containing gas to the heated substrate in the processing container. By repeating alternately, the heater, the predetermined element-containing gas so as to form a borocarbonitride film having a predetermined thickness formed by alternately stacking the carbonitride layer and the boronitride layer on the substrate. A control unit for controlling the supply system, the carbon-containing gas supply system, the nitrogen-containing gas supply system, and the boron-containing gas supply system;
A substrate processing apparatus is provided.

(Appendix 27)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container of the substrate processing apparatus, the carbon having a predetermined thickness containing the predetermined element on the substrate. Forming a nitride layer;
A step of forming a boron nitride layer having a predetermined thickness on the substrate by supplying a boron-containing gas and a nitrogen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, a procedure for forming a borocarbonitride film having a predetermined film thickness on which the carbonitride layer and the boronitride layer are alternately laminated on the substrate;
A program for causing a computer to execute is provided.

(Appendix 28)
According to yet another aspect of the invention,
By supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the heated substrate in the processing container of the substrate processing apparatus, the carbon having a predetermined thickness containing the predetermined element on the substrate. Forming a nitride layer;
A step of forming a boron nitride layer having a predetermined thickness on the substrate by supplying a boron-containing gas and a nitrogen-containing gas to the heated substrate in the processing container;
By alternately repeating the above, a procedure for forming a borocarbonitride film having a predetermined film thickness on which the carbonitride layer and the boronitride layer are alternately laminated on the substrate;
A computer-readable recording medium on which a program for causing a computer to execute is recorded is provided.

121 Controller 200 Wafer 201 Processing chamber 202 Processing furnace 203 Reaction tube 207 Heater 231 Exhaust tube 232a First gas supply tube 232b Second gas supply tube 232c Third gas supply tube 232d Fourth gas supply tube

Claims (18)

Supplying a predetermined element-containing gas, a carbon-containing gas and a nitrogen-containing gas to the substrate to form a carbonitride layer containing the predetermined element;
Forming a boron nitride layer by supplying a boron-containing gas and a nitrogen-containing gas to the substrate;
A method of manufacturing a semiconductor device, which includes a step of forming a borocarbonitride film in which the carbonitride layers and the boronitride layers are alternately stacked on the substrate by alternately repeating the above. In the step of forming the carbonitride layer, a step of supplying a predetermined element-containing gas to the substrate, a step of supplying a carbon-containing gas to the substrate, and a nitrogen-containing gas to the substrate This process is performed a predetermined number of times as a set.
The step of forming the boron nitride layer includes performing a predetermined number of times, one set of a step of supplying a boron-containing gas to the substrate and a step of supplying a nitrogen-containing gas to the substrate. 2. A method for manufacturing a semiconductor device according to 1. In the step of forming the carbonitride layer, by supplying a predetermined element-containing gas to the substrate, forming the predetermined element-containing layer, and supplying a carbon-containing gas to the substrate, Forming a carbon-containing layer on the predetermined element-containing layer to form a layer containing the predetermined element and carbon, and supplying a nitrogen-containing gas to the substrate to thereby form the layer containing the predetermined element and carbon Nitriding, and performing this set a predetermined number of times as a set,
In the step of forming the boron nitride layer, the boron-containing gas is supplied to the substrate, thereby forming the boron-containing layer; and the nitrogen-containing gas is supplied to the substrate, so that the boron-containing gas is supplied. The method for manufacturing a semiconductor device according to claim 1, wherein the step of nitriding the layer is performed as a set, and the set is performed a predetermined number of times.   The predetermined element-containing layer includes a continuous deposition layer of a predetermined element, a discontinuous deposition layer of a predetermined element, a continuous chemical adsorption layer of a predetermined element-containing gas, and a discontinuous chemical adsorption layer of a predetermined element-containing gas. The method for manufacturing a semiconductor device according to claim 3, comprising at least one of the layers.   The method for manufacturing a semiconductor device according to claim 3, wherein the carbon-containing layer includes a discontinuous chemical adsorption layer of a carbon-containing gas.   6. The method for manufacturing a semiconductor device according to claim 3, wherein the carbon-containing layer includes a chemical adsorption layer of a carbon-containing gas whose adsorption state is unsaturated.   The method of manufacturing a semiconductor device according to claim 3, wherein the boron-containing layer includes a discontinuous chemical adsorption layer of a boron-containing gas.   The method of manufacturing a semiconductor device according to claim 3, wherein the boron-containing layer includes a chemical adsorption layer of a boron-containing gas whose adsorption state is unsaturated.   The step of forming the carbonitride layer includes thermally nitriding the layer containing the predetermined element and carbon under a condition in which a nitriding reaction by the nitrogen-containing gas of the layer containing the predetermined element and carbon becomes unsaturated. A method for manufacturing a semiconductor device according to any one of 3 to 8.   10. The semiconductor according to claim 3, wherein, in the step of forming the boron nitride layer, the boron-containing layer is thermally nitrided under a condition in which a nitriding reaction of the boron-containing layer with a nitrogen-containing gas is unsaturated. Device manufacturing method.   The method for manufacturing a semiconductor device according to claim 3, wherein the predetermined element-containing layer supplies a predetermined element-containing gas to the substrate under a condition in which a CVD reaction occurs.   The method for manufacturing a semiconductor device according to claim 1, wherein the predetermined element includes a semiconductor element or a metal element.   The method for manufacturing a semiconductor device according to claim 1, wherein the predetermined element includes silicon.   The method of manufacturing a semiconductor device according to claim 1, wherein the borocarbonitride film includes a SiBCN film, the carbonitride layer includes a SiCN layer, and the boronitride layer includes a BN layer. A step of forming a predetermined element-containing layer by supplying a predetermined element-containing gas to the substrate, and a step of forming a carbon-containing layer on the predetermined element-containing layer by supplying a carbon-containing gas to the substrate. The step of forming a layer including the predetermined element and carbon and the step of nitriding the layer including the predetermined element and carbon by supplying a nitrogen-containing gas to the substrate are set as one set. Forming a carbonitriding layer containing a predetermined element by performing a predetermined number of times,
One set of a step of forming a boron-containing layer by supplying a boron-containing gas to the substrate and a step of nitriding the boron-containing layer by supplying a nitrogen-containing gas to the substrate. Forming a boronitride layer by performing this set a predetermined number of times, and
A method of manufacturing a semiconductor device, which includes a step of forming a borocarbonitride film in which the carbonitride layers and the boronitride layers are alternately stacked on the substrate by alternately repeating the above. A step of forming a predetermined element-containing layer by supplying a predetermined element-containing gas to the substrate, and a step of forming a carbon-containing layer on the predetermined element-containing layer by supplying a carbon-containing gas to the substrate. Forming a layer containing the predetermined element and carbon, and supplying a nitrogen-containing gas to the substrate, thereby nitriding the layer containing the predetermined element and carbon to form a carbonitride layer containing the predetermined element Forming, and
A step of forming a boron-containing layer by supplying a boron-containing gas to the substrate, and a step of nitriding the boron-containing layer by supplying a nitrogen-containing gas to the substrate to form a boron nitride layer. And a process of
A method of manufacturing a semiconductor device, which includes a step of forming a borocarbonitride film in which the carbonitride layers and the boronitride layers are alternately stacked on the substrate by alternately repeating the above. A processing container for containing a substrate;
A predetermined element-containing gas supply system for supplying a predetermined element-containing gas to the substrate in the processing container;
A carbon-containing gas supply system for supplying a carbon-containing gas to the substrate in the processing container;
A nitrogen-containing gas supply system for supplying a nitrogen-containing gas to the substrate in the processing vessel;
A boron-containing gas supply system for supplying a boron-containing gas to the substrate in the processing vessel;
A process of forming a carbonitriding layer containing a predetermined element by supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the substrate in the processing container; and the substrate in the processing container The carbonitride layer and the boron nitride layer are alternately stacked on the substrate by alternately repeating the process of forming a boron nitride layer by supplying a boron-containing gas and a nitrogen-containing gas. A controller configured to control the predetermined element-containing gas supply system, the carbon-containing gas supply system, the nitrogen-containing gas supply system, and the boron-containing gas supply system so as to form a boron carbonitride film,
A substrate processing apparatus. A procedure for forming a carbonitride layer containing a predetermined element by supplying a predetermined element-containing gas, a carbon-containing gas, and a nitrogen-containing gas to the substrate;
A step of forming a boron nitride layer by supplying a boron-containing gas and a nitrogen-containing gas to the substrate;
A program for causing a computer to execute a procedure for forming a borocarbonitride film in which the carbonitride layers and the boronitride layers are alternately laminated on the substrate by repeating the above.

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