JP2016027631A5 - - Google Patents

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JP2016027631A5
JP2016027631A5 JP2015126213A JP2015126213A JP2016027631A5 JP 2016027631 A5 JP2016027631 A5 JP 2016027631A5 JP 2015126213 A JP2015126213 A JP 2015126213A JP 2015126213 A JP2015126213 A JP 2015126213A JP 2016027631 A5 JP2016027631 A5 JP 2016027631A5
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convex portion
conductive
insulating layer
electrode
conductive convex
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基材および前記基材上に形成された第1電極を有する配線部材を準備し、
導電性材料、撥液剤および溶媒を含む導体組成物インクを前記第1電極上にパターン状に塗布して焼成することにより、前記第1電極と導通し撥液性を有する導電性凸部を形成する導電性凸部形成工程と、
前記導電性凸部が形成された前記配線部材上に樹脂組成物の塗膜を形成して硬化させることにより、前記導電性凸部が形成された領域にコンタクトホールを有する絶縁層を形成する絶縁層形成工程と、
前記コンタクトホール内で前記導電性凸部と導通するように、前記絶縁層上に第2電極を形成する第2電極形成工程と、
を有し、
前記絶縁層形成工程では、前記導電性凸部の高さよりも前記絶縁層の厚みが大きくなるように前記絶縁層を形成し、
前記導電性凸部の縦断面形状は、半円形状もしくは半楕円形状であることを特徴とする積層配線部材の製造方法。
Preparing a wiring member having a substrate and a first electrode formed on the substrate;
A conductive composition containing a conductive material, a liquid repellent and a solvent is applied onto the first electrode in a pattern and baked to form a conductive convex portion that is electrically connected to the first electrode and has liquid repellency. A conductive protrusion forming step,
Insulating to form an insulating layer having a contact hole in a region where the conductive convex portion is formed by forming a coating film of a resin composition on the wiring member on which the conductive convex portion is formed and curing it. A layer forming step;
A second electrode formation step of forming a second electrode on the insulating layer so as to be electrically connected to the conductive convex portion in the contact hole;
I have a,
In the insulating layer forming step, the insulating layer is formed so that the thickness of the insulating layer is larger than the height of the conductive convex portion,
A method for manufacturing a laminated wiring member, wherein the conductive protrusion has a semi-circular or semi-elliptical longitudinal cross-sectional shape .
前記導電性凸部形成工程後であり、かつ前記第2電極形成工程前に、前記導電性凸部の表面を親水化する親水化処理が行われることを特徴とする請求項1に記載の積層配線部材の製造方法。 The lamination according to claim 1 , wherein a hydrophilic treatment for hydrophilizing the surface of the conductive convex portion is performed after the conductive convex portion forming step and before the second electrode forming step. Manufacturing method of wiring member. 前記絶縁層形成工程では、前記絶縁層の厚みが、前記導電性凸部の高さに対して1.5倍〜5倍の範囲内となるように、前記絶縁層を形成することを特徴とする請求項1または請求項2に記載の積層配線部材の製造方法。   In the insulating layer forming step, the insulating layer is formed so that the thickness of the insulating layer is in a range of 1.5 to 5 times the height of the conductive protrusion. The manufacturing method of the laminated wiring member of Claim 1 or Claim 2 to do. 前記導電性凸部形成工程では、前記導電性凸部の大きさが10μm〜100μmの範囲内となるように、前記導電性凸部を形成することを特徴とする請求項1から請求項3までのいずれかの請求項に記載の積層配線部材の製造方法。   The conductive convex portion is formed in the conductive convex portion forming step so that the size of the conductive convex portion is within a range of 10 μm to 100 μm. A method for manufacturing a laminated wiring member according to any one of the preceding claims. 前記導電性凸部形成工程では、前記導電性凸部のアスペクト比(高さ/大きさ)が0.01〜0.1の範囲内となるように、前記導電性凸部を形成することを特徴とする請求項1から請求項4までのいずれかの請求項に記載の積層配線部材の製造方法。   In the conductive convex portion forming step, the conductive convex portion is formed so that an aspect ratio (height / size) of the conductive convex portion is within a range of 0.01 to 0.1. The method for manufacturing a laminated wiring member according to any one of claims 1 to 4, wherein the method is characterized in that: 前記樹脂組成物の粘度が、20mPa・s〜500mPa・sの範囲内であることを特徴とする請求項1から請求項5までのいずれかの請求項に記載の積層配線部材の製造方法。   The method for producing a laminated wiring member according to any one of claims 1 to 5, wherein the resin composition has a viscosity in a range of 20 mPa · s to 500 mPa · s. 前記樹脂組成物の表面張力が、20mN/m〜50mN/mの範囲内であることを特徴とする請求項1から請求項6までのいずれかの請求項に記載の積層配線部材の製造方法。   The surface tension of the said resin composition exists in the range of 20mN / m-50mN / m, The manufacturing method of the laminated wiring member in any one of Claim 1-6 characterized by the above-mentioned. 基材、前記基材上に形成されたソース電極およびドレイン電極、ならびに前記ソース電極および前記ドレイン電極の間のチャネル領域に形成された半導体層を有する配線部材を準備し、導電性材料、撥液剤および溶媒を含む導体組成物インクを前記ドレイン電極上にパターン状に塗布して焼成することにより、前記ドレイン電極と導通し撥液性を有する導電性凸部を形成する導電性凸部形成工程と、
前記ソース電極、前記ドレイン電極および前記半導体層を覆うように樹脂組成物の塗膜を形成して硬化させることにより、前記導電性凸部が形成された領域にコンタクトホールを有する絶縁層を形成する絶縁層形成工程と、
前記コンタクトホール内で前記導電性凸部と導通するように、前記絶縁層上に中間電極または外部入出力電極を形成する電極形成工程と、
を有し、
前記絶縁層形成工程では、前記導電性凸部の高さよりも前記絶縁層の厚みが大きくなるように前記絶縁層を形成し、
前記導電性凸部の縦断面形状は、半円形状もしくは半楕円形状であることを特徴とする半導体素子の製造方法。
A wiring member having a base material, a source electrode and a drain electrode formed on the base material, and a semiconductor layer formed in a channel region between the source electrode and the drain electrode is prepared. And a conductive convex portion forming step of forming a conductive convex portion that is electrically connected to the drain electrode and has liquid repellency by applying a conductive composition ink containing a solvent and a solvent in a pattern on the drain electrode and firing. ,
An insulating layer having a contact hole is formed in a region where the conductive convex portion is formed by forming and curing a coating film of a resin composition so as to cover the source electrode, the drain electrode, and the semiconductor layer. An insulating layer forming step;
Forming an intermediate electrode or an external input / output electrode on the insulating layer so as to be electrically connected to the conductive protrusion in the contact hole;
I have a,
In the insulating layer forming step, the insulating layer is formed so that the thickness of the insulating layer is larger than the height of the conductive convex portion,
The method of manufacturing a semiconductor element, wherein a longitudinal cross-sectional shape of the conductive convex portion is a semicircular shape or a semielliptical shape .
前記導電性凸部形成工程後であり、かつ前記電極形成工程前に、前記導電性凸部の表面を親水化する親水化処理が行われることを特徴とする請求項8に記載の半導体素子の製造方法。 9. The semiconductor element according to claim 8 , wherein a hydrophilic treatment for hydrophilizing the surface of the conductive convex portion is performed after the conductive convex portion forming step and before the electrode forming step . Production method. 前記絶縁層形成工程では、前記絶縁層の厚みが、前記導電性凸部の高さに対して1.5倍〜5倍の範囲内となるように、前記絶縁層を形成することを特徴とする請求項8または請求項9に記載の半導体素子の製造方法。   In the insulating layer forming step, the insulating layer is formed so that the thickness of the insulating layer is in a range of 1.5 to 5 times the height of the conductive protrusion. The manufacturing method of the semiconductor element of Claim 8 or Claim 9 to do. 前記導電性凸部形成工程では、前記導電性凸部の大きさが10μm〜100μmの範囲内となるように、前記導電性凸部を形成することを特徴とする請求項8から請求項10までのいずれかの請求項に記載の半導体素子の製造方法。   11. The conductive convex portion is formed in the conductive convex portion forming step, wherein the conductive convex portion is formed so that a size of the conductive convex portion is in a range of 10 μm to 100 μm. A method for manufacturing a semiconductor device according to any one of the preceding claims. 前記導電性凸部形成工程では、前記導電性凸部のアスペクト比(高さ/大きさ)が0.01〜0.1の範囲内となるように、前記導電性凸部を形成することを特徴とする請求項8から請求項11までのいずれかの請求項に記載の半導体素子の製造方法。   In the conductive convex portion forming step, the conductive convex portion is formed so that an aspect ratio (height / size) of the conductive convex portion is within a range of 0.01 to 0.1. 12. The method of manufacturing a semiconductor element according to claim 8, wherein the semiconductor element manufacturing method is characterized in that: 前記樹脂組成物の粘度が、20mPa・s〜500mPa・sの範囲内であることを特徴とする請求項8から請求項12までのいずれかの請求項に記載の半導体素子の製造方法。   13. The method of manufacturing a semiconductor element according to claim 8, wherein a viscosity of the resin composition is in a range of 20 mPa · s to 500 mPa · s. 前記樹脂組成物の表面張力が、20mN/m〜50mN/mの範囲内であることを特徴とする請求項8から請求項13までのいずれかの請求項に記載の半導体素子の製造方法。   14. The method of manufacturing a semiconductor element according to claim 8, wherein a surface tension of the resin composition is in a range of 20 mN / m to 50 mN / m. 基材と、
前記基材上に形成された第1電極と、
前記第1電極上にパターン状に形成され、前記第1電極と導通する導電性凸部と、
前記第1電極が形成された前記基材上に形成され、前記導電性凸部が形成された領域にコンタクトホールを有し、樹脂を含む絶縁層と、
前記絶縁層上に形成され、前記コンタクトホール内で前記導電性凸部と導通する第2電極と、を有し、
前記導電性凸部の高さよりも前記絶縁層の厚みが大きく、
前記導電性凸部の縦断面形状は、半円形状もしくは半楕円形状であることを特徴とする積層配線部材。
A substrate;
A first electrode formed on the substrate;
A conductive protrusion formed in a pattern on the first electrode and electrically connected to the first electrode;
An insulating layer formed on the base material on which the first electrode is formed and having a contact hole in a region where the conductive protrusion is formed, and including a resin;
A second electrode formed on the insulating layer and electrically connected to the conductive protrusion in the contact hole;
The thickness of the insulating layer than the height of the conductive projection is rather large,
The laminated wiring member according to claim 1, wherein the conductive protrusion has a semi-circular or semi-elliptical longitudinal cross-sectional shape .
基材と、
前記基材上に形成されたソース電極およびドレイン電極、ならびに前記ソース電極および前記ドレイン電極の間のチャネル領域に形成された半導体層と、
前記ドレイン電極上にパターン状に形成され、前記ドレイン電極と導通する導電性凸部と、
前記ソース電極、前記ドレイン電極および前記半導体層が形成された基板上に形成され、前記導電性凸部が形成された領域にコンタクトホールを有し、樹脂を含む絶縁層と、
前記絶縁層上に形成され、前記コンタクトホール内で前記導電性凸部と導通する中間電極または外部入出力電極と、を有し、
前記導電性凸部の高さよりも前記絶縁層の厚みが大きく、
前記導電性凸部の縦断面形状は、半円形状もしくは半楕円形状であることを特徴とする半導体素子。
A substrate;
A source electrode and a drain electrode formed on the substrate, and a semiconductor layer formed in a channel region between the source electrode and the drain electrode;
A conductive protrusion formed in a pattern on the drain electrode and electrically connected to the drain electrode;
An insulating layer formed on a substrate on which the source electrode, the drain electrode, and the semiconductor layer are formed, and having a contact hole in a region where the conductive convex portion is formed;
An intermediate electrode or an external input / output electrode formed on the insulating layer and electrically connected to the conductive protrusion in the contact hole;
The thickness of the insulating layer than the height of the conductive projection is rather large,
The semiconductor element according to claim 1, wherein a longitudinal cross-sectional shape of the conductive protrusion is a semicircular shape or a semielliptical shape .
JP2015126213A 2014-06-24 2015-06-24 Manufacturing method of laminated wiring member, manufacturing method of semiconductor element, laminated wiring member, and semiconductor element Expired - Fee Related JP6002817B2 (en)

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