JP2016009749A - Light emitting device and light emitting device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device and a manufacturing method of the same, which enables highly reliable mounting by preventing creeping up of a solder fused at the time of mounting to a semiconductor light emitting element.SOLUTION: A light emitting device 100 includes a semiconductor laminate 12, a semiconductor light emitting element 1 having electrodes 13, 15 provided on one surface, and a first resin layer 21 and a second resin layer which are laminated on one surface side of the semiconductor laminate 12. The first resin layer 21 has first metal layers 31n, 31p inside which are connected to the electrodes 13, 15. The second resin layer has second metal layer 32n, 32p inside which are connected to the first metal layers 31n, 31p. Top faces of the second metal layers 32n, 32p are exposed from the second resin layer and serve as mounting surface for being connected with the outside and at least a part of the top faces of the second metal layers 32n, 32p is formed to be lower than a top face of the second resin layer 22.

Description

  The present invention relates to a light emitting device including a semiconductor light emitting element and a resin layer having internal wiring, and a method for manufacturing the same.

A light-emitting device using a semiconductor light-emitting element such as a light-emitting diode is widely used because it can be easily downsized and high luminous efficiency can be obtained.
A light-emitting device using a semiconductor light-emitting element can be broadly divided into a face-up type in which a surface on which a pad electrode is provided on the semiconductor light-emitting element is a surface opposite to the mounting substrate, and a semiconductor light-emitting element that is a surface facing the mounting substrate There are two types of face-down type, in which electrodes are provided on the lower surface of the plate.

  In the face-up type, the semiconductor light emitting element is mounted on a lead or the like, and the semiconductor light emitting element and the lead are connected by a bonding wire or the like. For this reason, when mounted on a mounting substrate and viewed in plan from the direction perpendicular to the surface of the substrate, a part of the bonding wire needs to be positioned outside the semiconductor light emitting element, and there is a limit to downsizing.

On the other hand, in the face-down type (flip chip type), when the pad electrode provided on the surface of the semiconductor light emitting element and the wiring provided on the mounting substrate are viewed in a plan view from a direction perpendicular to the surface of the mounting substrate, semiconductor light emission Electrical connection can be made by connecting means such as bumps or metal pillars located within the size range of the element.
Thereby, it is possible to realize a CSP (Chip Size Package or Chip Scale Package) in which the size of the light emitting device (particularly, the size in plan view from the direction perpendicular to the mounting substrate) is reduced to a level close to the chip of the light emitting element.

  In recent years, there has been a face-down type light emitting device in which a growth substrate (translucent substrate) such as sapphire is removed or the thickness thereof is reduced in order to further reduce the size or increase the light emission efficiency. It is used.

The growth substrate is a substrate used for growing an n-type semiconductor layer and a p-type semiconductor layer constituting the light-emitting element thereon, and supports the semiconductor light-emitting element having a small thickness and a low strength, thereby supporting the light-emitting device. It also has the effect of improving strength.
For this reason, in the light emitting device in which the growth substrate is removed after the semiconductor light emitting element is formed or the light emitting device in which the thickness of the growth substrate is reduced, for example, as shown in Patent Document 1, in order to support the semiconductor light emitting element A resin layer is provided on the electrode side (the side facing the mounting substrate), and an internal wiring made of a metal pillar or other wiring is formed so as to penetrate the resin layer to electrically connect the electrode and the external terminal. It is configured as follows.
And by having the resin layer containing this internal wiring, a light-emitting device can ensure sufficient intensity | strength.

JP 2011-187679 A

Here, when the light emitting device having the resin layer provided on the electrode side as described above is mounted on the mounting substrate by using a reflow method or the like using, for example, solder as a conductive adhesive member, the molten solder is the resin layer. May crawl along the sides of the semiconductor layer and reach the semiconductor layer. In the case where the semiconductor layer has a portion that is not covered with an insulating film as in the light-emitting device described in Patent Document 1, the circuit may be short-circuited by the solder that has been scooped up. Further, when the solder reaches the semiconductor layer and the light extraction surface is soiled, the light extraction efficiency is lowered.
Accordingly, it is an object of the present invention to provide a light emitting device that can be mounted with high reliability, and a manufacturing method thereof, by preventing an adhesive member such as solder melted at the time of mounting from creeping up to the semiconductor light emitting element. .

  In order to solve the above-described problems, a light-emitting device according to an embodiment of the present invention includes a semiconductor light-emitting element including a semiconductor stacked body and an electrode provided on one surface of the semiconductor stacked body, and the semiconductor stacked body. A first resin layer provided on the one surface side of the first resin layer and a second resin layer provided on the first resin layer, wherein the first resin layer is electrically connected to the electrode inside. The second resin layer has a second metal layer electrically connected to the first metal layer inside, and the upper surface of the second metal layer is formed by the second metal layer. The mounting surface is exposed from the resin layer and connected to the outside, and the height from the semiconductor laminate is such that at least a part of the upper surface of the second metal layer is higher than the upper surface of the second resin layer. Configure to be lower.

  A method for manufacturing a light emitting device according to an embodiment of the present invention is a method for manufacturing a light emitting device including a semiconductor light emitting element having a semiconductor stacked body and an electrode provided on one surface of the semiconductor stacked body. A wafer preparation step of preparing a wafer formed by arranging a plurality of the semiconductor light emitting elements, and a first resin layer having an opening in a part of a region where the electrode is provided on one surface side of the semiconductor laminate Forming a first resin layer, forming a first metal layer in the opening of the first resin layer, and forming the first metal layer on the first resin layer A second resin layer forming step of forming a second resin layer having an opening in the formed region; a second metal layer forming step of forming a second metal layer in the opening of the second resin layer; and By cutting along the boundary line of the semiconductor light emitting device, multiple And a step of dividing the semiconductor light-emitting element into pieces, and the height from the semiconductor stacked body is such that at least a part of the upper surface of the second metal layer is higher than the upper surface of the second resin layer. The second metal layer is formed to be low.

According to the light emitting device according to the embodiment of the present invention, at least a part of the upper surface of the second metal layer is made lower than the upper surface of the second resin layer, so that the opening of the second resin layer is mounted when the light emitting device is mounted. A conductive adhesive member is accommodated in the gap in the section, and for example, solder, which is an adhesive member, is prevented from leaking from between the second metal layer and the mounting substrate. As a result, the solder is prevented from creeping up along the second resin layer and the side surfaces of the second resin layer, and a highly reliable light emitting device can be mounted.
Moreover, according to the method for manufacturing a light emitting device according to the embodiment of the present invention, it is possible to manufacture the light emitting device having the above-described configuration in which at least a part of the upper surface of the second metal layer is lower than the upper surface of the second resin layer. it can.

It is a schematic diagram which shows the structure of the light-emitting device which concerns on embodiment of this invention, (a) is a top view, (b) is sectional drawing in the II line | wire of (a). It is a typical perspective view which shows the structure of the light-emitting device which concerns on embodiment of this invention. It is a typical top view which shows the layer structure of the light-emitting device which concerns on embodiment of this invention, (a) shows the arrangement | positioning area | region of a p-type semiconductor layer and a cover electrode, (b) shows the arrangement | positioning area | region of a light reflection electrode. . It is a typical top view which shows the layer structure of the light-emitting device which concerns on embodiment of this invention, (a) shows the arrangement | positioning area | region of an interlayer insulation film, (b) shows the arrangement | positioning area | region of an n side electrode and a p side electrode. . It is a typical top view which shows the layer structure of the light-emitting device which concerns on embodiment of this invention, (a) shows the arrangement | positioning area | region of a 1st resin layer and a 1st metal layer, (b) shows a 2nd resin layer and 2nd resin layer. The arrangement | positioning area | region of 2 metal layers is shown. It is typical sectional drawing which shows a mode that the light-emitting device which concerns on embodiment of this invention is mounted in a mounting substrate. It is a flowchart which shows the flow of the manufacturing method of the light-emitting device which concerns on embodiment of this invention. It is typical sectional drawing which shows a part of manufacturing process of the light-emitting device which concerns on embodiment of this invention, (a) is a semiconductor laminated body formation process, (b) is a light reflection electrode formation process, (c) is a cover electrode. (D) shows an n-type semiconductor layer exposing step, and (e) shows an interlayer insulating film forming step. It is a schematic diagram which shows the pad electrode formation process in the manufacturing process of the light-emitting device which concerns on embodiment of this invention, (a) is a top view, (b) is sectional drawing in the II-II line of (a). It is a schematic diagram which shows the mask formation process in the manufacturing process of the light-emitting device which concerns on embodiment of this invention, (a) is a top view, (b) is sectional drawing in the II-II line of (a). It is typical sectional drawing which shows a part of manufacturing process of the light-emitting device which concerns on embodiment of this invention, (a) is 1st resin layer formation process, (b) is 1st metal layer formation process, (c) is A 2nd resin layer formation process is shown. It is typical sectional drawing which shows a part of manufacturing process of the light-emitting device concerning embodiment of this invention, (a) shows a 2nd metal layer formation process, (b) shows a mask removal process. It is a schematic diagram which shows the pad electrode separation process in the manufacturing process of the light-emitting device which concerns on embodiment of this invention, (a) is a top view, (b) is sectional drawing in the II-II line of (a). It is typical sectional drawing which shows the growth substrate removal process in the manufacturing process of the light-emitting device which concerns on embodiment of this invention. It is a schematic diagram which shows the structure of the light-emitting device which concerns on the modification of embodiment of this invention, (a) is a top view, (b) is sectional drawing in the II line | wire of (a). It is a typical perspective view which shows the structure of the light-emitting device which concerns on the modification of embodiment of this invention.

Embodiments of a light emitting device and a method for manufacturing the same according to the present invention will be described below.
Note that the drawings referred to in the following description schematically show the present invention, and therefore the scale, spacing, positional relationship, etc. of each member are exaggerated, or some of the members are not shown. There is a case. In addition, the scale and interval of each member may not match between a perspective view, a plan view, and a cross-sectional view. Moreover, in the following description, the same name and the code | symbol are showing the same or the same member in principle, and suppose that detailed description is abbreviate | omitted suitably.

  Further, in the light emitting device according to each embodiment of the present invention, “upper”, “lower”, “left”, “right”, and the like are interchanged depending on the situation. In the present specification, “upper”, “lower” and the like indicate relative positions between components in the drawings referred to for explanation, and indicate absolute positions unless otherwise specified. Not intended.

[Configuration of light emitting device]
First, with reference to FIGS. 1-5, the structure of the light-emitting device which concerns on embodiment of this invention is demonstrated.
Note that the cross-sectional view shown in FIG. 1B schematically shows a cross-section taken along line II of the plan view shown in FIG. The positions A1 to A6 on the I-I line shown in FIG. 1A correspond to the positions A1 to A6 indicated by arrows in FIG. 1B, but in order to show the sectional structure in an easy-to-understand manner. The distance interval in the cross-sectional view of FIG. 1B is shown by appropriately extending or shortening the distance interval (length of the member) in the plan view of FIG. Does not match. Further, other sectional views to be described later also show a section corresponding to the II line of the plan view shown in FIG. 1A, as in FIG. 1B, unless otherwise specified.
3 to 5 show the arrangement area in a plan view for each layer by hatching in order to explain the laminated structure of the light emitting device 100 according to the present embodiment.

  As shown in FIGS. 1 to 5, the light emitting device 100 according to the present embodiment has a substantially square prism shape and an LED (light emitting diode) structure from which a growth substrate is removed. Hereinafter, the CSP is appropriately referred to as a “light emitting element”) and a support 2 provided on one surface side of the light emitting element 1. Moreover, although mentioned later for details, the light-emitting device 100 is WCSP (CSP by a wafer process) produced at a wafer level.

An n-side electrode 13 and a p-side electrode 15 are provided on one surface side of the light emitting element 1 (upper surface in FIG. 1B), and a first resin layer 21 and a second resin layer 22 are laminated. A support 2 is provided. Further, in the first resin layer 21 and the second resin layer 22, a first metal layer (n-side first metal layer) 31n and a first metal layer (p-side first metal layer) are provided as internal wirings, respectively. 31p, a second metal layer (n-side second metal layer) 32n, and a second metal layer (p-side second metal layer) 32p are provided. The second metal layer 32n is electrically connected to the n-side electrode 13 via the first metal layer 31n, the second metal layer 32p is electrically connected to the p-side electrode 15 via the first metal layer 31p, The upper surfaces of the second metal layers 32n and 32p exposed from the second resin layer 22 are mounting surfaces for electrical connection with the outside. In plan view, the second metal layer 32n is partitioned by the second resin layer 22 between the second metal layer 32n and the second metal layer 32p. Further, the upper surfaces of the second metal layers 32 n and 32 p have a “height” that is a distance from the semiconductor stacked body 12 in the stacking direction of the semiconductor stacked body 12 lower than the upper surface of the second resin layer 22. Is provided.
The lower surface side of the light emitting element 1 is a light extraction surface.

  Further, at the boundary between the first resin layer 21 and the second resin layer 22, there is a step 23 having a distance d so that the outer edge of the second resin layer 22 is inside the outer edge of the first resin layer 21 in plan view. Is provided. A step 21 b is also provided on the side surface of the first resin layer 21 so that the lower outer edge is inside the upper outer edge in plan view.

  In the present embodiment, the light emitting element 1 has the growth substrate 11 (see FIG. 8A) used when the semiconductor stacked body 12 is formed by crystal growth of a semiconductor material removed. You may make it have it thin as it is or by grinding | polishing. Further, a phosphor layer containing a phosphor may be provided on the back surface side of the semiconductor stacked body 12 after the growth substrate 11 is peeled off or on the back surface side of the growth substrate 11.

Next, the configuration of each part of the light emitting device 100 will be described in detail sequentially.
The light-emitting element 1 is a face-down type LED chip having a plate-like shape having a substantially square shape in plan view and including an n-side electrode 13 and a p-side electrode 15 on one surface side.

  The light emitting element 1 includes a semiconductor stacked body 12 in which an n-type semiconductor layer 12n and a p-type semiconductor layer 12p are stacked. The semiconductor stacked body 12 emits light by passing a current between the n-side electrode 13 and the p-side electrode 15, and an active layer 12a is provided between the n-type semiconductor layer 12n and the p-type semiconductor layer 12p. It is preferable to provide.

  As shown in FIGS. 1 and 3A, in the semiconductor stacked body 12, the p-type semiconductor layer 12p and the active layer 12a are not partially present, that is, n-type recessed from the surface of the p-type semiconductor layer 12p. A region where the semiconductor layer 12n is exposed (this region is referred to as a “first exposed portion 12b”) is formed. The light emitting element 1 is provided with a total of 12 circular first exposed portions 12b in three rows of four each in a plan view. The bottom surface of the first exposed portion 12b has an interlayer insulating film 16 in which an opening 16n is formed, and the n-type semiconductor layer 12n and the n-side electrode 13 are connected through the opening 16n of the interlayer insulating film 16. Electrically connected.

Further, along the outer periphery of the semiconductor stacked body 12, the p-type semiconductor layer 12p and the active layer 12a do not exist, and a second exposed portion 12c, which is a region where the n-type semiconductor layer 12n is exposed, is provided. The second exposed portion 12c is provided in a boundary area (dicing street) that is an area along the boundary line 40 (see FIG. 8D) of the light emitting element 1 in the wafer state, and separates the light emitting element 1 in the wafer state into pieces. This is the rest of the area that becomes the cutting allowance when converting.
In the completed light emitting device 100, the first exposed portion 12b and the second exposed portion 12c are all or partly covered with the interlayer insulating film 16, the first resin layer 21, the second resin layer 22, and the like. However, for convenience, it is referred to as an “exposed portion”.

  In addition, the side surface serving as the outer edge of the semiconductor stacked body 12 in plan view, that is, the side surface serving as the outer edge of the n-type semiconductor layer 12 n is not covered with either the interlayer insulating film 16 or the first resin layer 21. In the singulation process S115 (see FIG. 7), which is the last process of manufacturing the light emitting device 100 by the wafer level process, the semiconductor stacked body 12 is cleaved, and the cut section is formed as a side surface that is an outer edge in plan view. . For this reason, in the separated light emitting device 100, the side surface which becomes the outer edge of the semiconductor stacked body 12 is exposed, and a wide light distribution type light emitting device can be obtained.

  Further, as shown in FIGS. 1B, 3A, and 3B, a light reflecting electrode 14a and a cover electrode 14b are formed on substantially the entire upper surface of the p-type semiconductor layer 12p of the semiconductor stacked body 12. Is provided on the entire surface electrode 14. That is, in FIG. 3A, the hatched region is a region where the p-type semiconductor layer 12p and the cover electrode 14b are provided. The light reflecting electrode 14a is covered with a cover electrode 14b on the top and side surfaces, and is included in the region where the cover electrode 14b is arranged in plan view as shown by hatching in FIG. It is arranged in the inner area.

Further, as shown in FIGS. 1B and 4A, the upper surface and side surfaces of the full-surface electrode 14 and the upper surface and side surfaces of the semiconductor stacked body 12 (regions hatched in FIG. 4A). Is provided with an interlayer insulating film 16. The interlayer insulating film 16 has an opening 16n on the bottom surface of the first exposed portion 12b, and an opening 16p in a part on the cover electrode 14b. The openings 16n are provided in a circular shape on the bottom surfaces of the first exposed portions 12b provided at twelve locations, and the openings 16p are rectangular shapes with rounded corners at ten locations on the cover electrode 14b. Is provided. The interlayer insulating film 16 also has an opening on the bottom surface of the second exposed portion 12c.
Note that the interlayer insulating film 16 may cover the upper surface of the n-type semiconductor layer 12n to the end without having an opening in the second exposed portion 12c.

As shown in FIGS. 1B and 4B, the p-side electrode 15 that is the p-side pad electrode of the light-emitting element 1 is electrically connected to the cover electrode 14b in the opening 16p. In addition, it is formed so as to extend to the upper surface of the cover electrode 14b in the right half region in FIG. 4B and part of the side surface and the bottom surface of the second exposed portion 12c via the interlayer insulating film 16.
Further, the n-side electrode 13 that is the n-side pad electrode of the light emitting element 1 is electrically connected to the n-type semiconductor layer 12n in the opening 16n, and the first exposed portion 12b via the interlayer insulating film 16. Are provided so as to extend to the upper surface and the side surface of the cover electrode 14b excluding the region where the p-side electrode 15 is provided and the vicinity thereof, and the side surface and the bottom surface of the second exposed portion 12c.
That is, in the light emitting element 1, both the n-side electrode 13 and the p-side electrode 15 are provided on one surface side of the semiconductor stacked body 12.
In addition, by providing the n-side electrode 13 and / or the p-side electrode 15 in a wide range on the upper surface and side surface of the light emitting element 1 as described above, heat is efficiently applied to the resin layer 31 of the support 3 described later. The heat dissipation of the light emitting device 100 can be improved.

The semiconductor laminate 12 (n-type semiconductor layer 12n, the active layer 12a and the p-type semiconductor layer 12p) _{is, In X Al Y Ga 1-} X-Y N (0 ≦ X, 0 ≦ Y, X + Y <1) semiconductor such as Are preferably used. In addition, each of these semiconductor layers may have a single layer structure, but may have a laminated structure of layers having different compositions and film thicknesses, a superlattice structure, or the like. In particular, the active layer 12a preferably has a single quantum well or multiple quantum well structure in which thin films that produce quantum effects are stacked.

The full-surface electrode 14 functions as a current diffusion layer and a light reflection layer, and is configured by laminating a light reflection electrode 14a and a cover electrode 14b.
The light reflecting electrode 14a is provided so as to cover substantially the entire upper surface of the p-type semiconductor layer 12p. A cover electrode 14b is provided so as to cover the entire upper surface and side surfaces of the light reflecting electrode 14a. The light reflecting electrode 14a is a layer for uniformly diffusing the current supplied through the cover electrode 14b and the p-side electrode 15 provided on a part of the upper surface of the cover electrode 14b to the entire surface of the p-type semiconductor layer 12p. It is. In addition, the light reflecting electrode 14a has good light reflectivity, and also functions as a layer that reflects light emitted from the light emitting element 1 in a downward direction as a light extraction surface.

  The light reflecting electrode 14a can be made of a metal material having good conductivity and light reflectivity. In particular, as a metal material having good reflectivity in the visible light region, Ag, Al, or an alloy containing these metals as a main component can be preferably used. The light reflecting electrode 14a may be a single layer or a laminate of these metal materials.

The cover electrode 14b is a barrier layer for preventing migration of the metal material that constitutes the light reflecting electrode 14a. In particular, when the light reflecting electrode 14a is made of Ag that easily causes migration or an alloy containing Ag as a main component, the cover electrode 14b is preferably provided.
As the cover electrode 14b, a metal material having good conductivity and barrier properties can be used. For example, Al, Ti, W, Au, AlCu alloy, or the like can be used. The cover electrode 14b may be a single layer or a laminate of these metal materials.
In FIG. 1, the arrangement region of the cover electrode 14b in plan view is shown so as to coincide with the arrangement region of the p-type semiconductor layer 12p for convenience, but the cover electrode 14b is formed from the p-type semiconductor layer 12p. Is also provided slightly inside. The same applies to the manufacturing process diagrams described later.

The n-side electrode 13 is electrically connected to the n-type semiconductor layer 12n through the opening 16n of the interlayer insulating film 16 on the bottom surface of the first exposed portion 12b provided at twelve locations. By connecting to the n-type semiconductor layer 12n in such a wide range, the current supplied through the n-side electrode 13 can be evenly diffused to the n-type semiconductor layer 12n, so that the light emission efficiency is improved. Can do.
Further, the p-side electrode 15 is electrically connected to the cover electrode 14b at the openings 16p of the interlayer insulating film 16 provided at ten locations on the upper surface of the cover electrode 14b.
As shown in FIG. 5A, ten first metal layers 31 n are provided on the upper surface of the n-side electrode 13 so as to be electrically connected to the n-side electrode 13, and the upper surface of the p-side electrode 15. The ten first metal layers 31 p are provided so as to be electrically connected to the p-side electrode 15.

  As the n-side electrode 13 and the p-side electrode 15, a metal material can be used. For example, a single metal such as Ag, Al, Ni, Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, or W can be used. An alloy containing these metals as a main component can be preferably used. In addition, when using an alloy, you may contain nonmetallic elements, such as Si, as a composition element like an AlSiCu alloy (ASC), for example. In addition, the n-side electrode 13 and the p-side electrode 15 may be a single layer or a laminate of these metal materials.

  The interlayer insulating film (insulating film) 16 is a film that covers the top and side surfaces of the semiconductor laminate 12 and the entire surface electrode 14. The interlayer insulating film 16 functions as a protective film and an antistatic film for the light emitting element 1. In addition, an n-side electrode 13 and a p-side electrode 15 are provided so as to extend complementarily over a wide area on the upper surface of the interlayer insulating film 16. As the interlayer insulating film 16, a metal oxide or a metal nitride can be used. For example, at least one oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al is preferable. Can be used. Further, the interlayer insulating film 16 may be laminated by using two or more kinds of translucent dielectrics having different refractive indexes to form a DBR (Distributed Bragg Reflector) film.

  Note that the light-emitting element 1 illustrated in FIG. 1 is an example, and the present invention is not limited to this. In the light emitting element 1, the n-side electrode 13 and the p-side electrode 15 may be provided on one surface side of the semiconductor stacked body 12, and the arrangement region of the first exposed portion 12 b, the n-side electrode 13, and the p-side electrode 15. Etc. can be determined as appropriate. Further, instead of or in addition to the first exposed portion 12b, the n-type semiconductor layer 12n and the n-side electrode 13 may be electrically connected by the second exposed portion 12c.

The support 2 has a quadrangular prism shape that is substantially the same as the outer shape of the light emitting element 1 in plan view, and is joined to the surface side of the light emitting element 1 on which the n-side electrode 13 and the p-side electrode 15 are provided. And a reinforcing member for mechanically maintaining the structure of the light-emitting element 1 from which the growth substrate 11 (see FIG. 8A) is removed. The support 2 is configured by laminating a first resin layer 21 having first metal layers 31n and 31p inside and a second resin layer 22 having second metal layers 32n and 32p inside.
The light emitting device 100 shown in FIG. 1 is configured such that the support 2 is included in the light emitting element 1 in plan view, but may be configured to overlap in the plan view. May be configured to include the light emitting element 1.

The laminate composed of the first resin layer 21 and the second resin layer 22 is a base body as a reinforcing member of the light emitting element 1. As shown in FIG. 1, the first resin layer 21 and the second resin layer 22 are substantially the same as the outer shape of the light emitting element 1 in plan view, but the outer shape of the second resin layer 22 is the first resin layer 21. It is formed so as to be included in the outer shape. Therefore, a step 23 is formed at the boundary in the thickness direction between the first resin layer 21 and the second resin layer 22.
Further, the side surface of the first resin layer 21 is formed with a step 21b so that the lower part is included in the upper part in a plan view, and emitted from the semiconductor stacked body 12 (particularly, the n-type semiconductor layer 12n) to the outside. It is possible to reduce the light from being blocked by the first resin layer 21.

The first resin layer 21 has ten first metal layers 31n and ten first metal layers 31p as internal wirings so as to penetrate in the thickness direction.
Further, the second resin layer 22 has one second metal layer 32n and one second metal layer 32p as internal wirings so as to penetrate in the thickness direction. The second resin layer 22 partitions the second metal layer 32n and the second metal layer 32p, which are two polar external connection electrodes, and an upper surface in a region that is an outer edge in plan view, and an upper surface in the partition region Are formed at the same height. Therefore, when the light-emitting device 100 is mounted face-down, the light-emitting device 100 can be satisfactorily adhered to the mounting substrate, and the adhesive member used on the second metal layer 32n side by the inner wall constituting the partition region and the first It is possible to prevent the adhesive member used on the two metal layer 32p side from coming into contact.
In the second resin layer 22, the width of the region separating the second metal layer 32n and the second metal layer 32p is preferably about 200 μm or more and 500 μm or less.

  As the resin material for the first resin layer 21 and the second resin layer 22, those known in the art can be used, but it is preferable to use a photosensitive resin material used as a photoresist. By using the photosensitive resin material, the first resin layer 21 and the second resin layer 22 can be easily patterned by photolithography.

The combined thickness of the first resin layer 21 and the second resin layer 22 can be set at a lower limit so that the growth substrate has sufficient strength as a reinforcing member of the light-emitting element 1 that has been peeled or thinned.
For example, from the viewpoint of the reinforcing member, the total thickness of the first resin layer 21 and the second resin layer 22 is preferably about 30 μm or more, and more preferably about 90 μm or more.
Further, in consideration of the volume ratio of the metal in the first resin layer 21 and the second resin layer 22 and the heat generation amount of the light emitting element 1, the first resin layer 21 and the second resin layer 21 and the second resin layer 21 are obtained so that sufficient heat dissipation is obtained. The upper limit of the combined thickness of the resin layer 22 can be determined. For example, it is preferably about 150 μm or less, and more preferably about 120 μm or less.

The first metal layer (n-side first metal layer) 31n is provided inside the first resin layer 21 so as to penetrate in the thickness direction, and is connected to the n-side electrode 13 which is an electrode of the light emitting element 1 and the outside. This is an n-side internal wiring for electrically connecting the second metal layer 32n serving as an electrode for the purpose.
In the present embodiment, as shown in FIG. 5 (a), on the n-side electrode 13 (see FIG. 4 (b)) in the left half region of the light emitting device 100, 10 pieces arranged in two rows of 5 pieces each. A first metal layer 31n (a region hatched with a diagonal line rising to the right in FIG. 5A) is provided.

The first metal layer (p-side first metal layer) 31p is provided inside the first resin layer 21 so as to penetrate in the thickness direction, and is connected to the p-side electrode 15 that is the electrode of the light-emitting element 1 and the outside. This is a p-side internal wiring for electrically connecting the second metal layer 32p serving as an electrode for the purpose.
In the present embodiment, as shown in FIG. 5 (a), on the p-side electrode 15 (see FIG. 4 (b)) in the right half region of the light emitting device 100, 10 pieces arranged in two rows of 5 pieces each. A first metal layer 31p (a region hatched with a right-down oblique line in FIG. 5A) is provided.

The second metal layer (n-side second metal layer) 32n is provided inside the second resin layer 22 so as to penetrate in the thickness direction, and the upper surface is an n-side that serves as a mounting surface for connection to the outside. Internal wiring.
As shown in FIG. 5A and FIG. 5B, in the present embodiment, one second metal layer 32n is provided in the left half region of the light emitting device 100, and on the lower surface of the second metal layer 32n. The upper surfaces of the ten first metal layers 31n are electrically connected.

The second metal layer (p-side second metal layer) 32p is provided inside the second resin layer 22 so as to penetrate in the thickness direction, and the upper surface is a mounting surface for connecting to the outside. Internal wiring.
As shown in FIGS. 5A and 5B, in the present embodiment, one second metal layer 32p is provided in the right half region of the light emitting device 100, and the lower surface of the second metal layer 32p is provided. The upper surfaces of the ten first metal layers 31p are electrically connected.

1 and 2 is formed so that the upper surfaces of the second metal layers 32n and 32p are flat surfaces that are horizontal (perpendicular to the stacking direction of the semiconductor stacked body 12). The entirety is provided so as to be lower than the upper surface of the second resin layer 22.
The height difference between the upper surfaces of the second metal layers 32n and 32p and the upper surface of the second resin layer 22 is preferably about 5 μm or more and 10 μm or less. By setting the difference in height to about 5 μm or more, the adhesive member can be accommodated and excessive leakage of the adhesive member can be suppressed. The upper limit of the height difference is not particularly limited, but is preferably about 10 μm or less so that the amount of the adhesive member used does not increase excessively.

  Here, when forming the 2nd resin layer 22 with the photolithographic method, the upper limit of the thickness of the 2nd resin layer 22 which can be manufactured is about 80 micrometers. In addition, the growth rate during plating growth by the electrolytic plating method is not significantly different between the vertical direction (vertical direction in FIG. 1B) and the horizontal direction (lateral direction in FIG. 1B). Therefore, as shown in FIGS. 5A and 5B, the first metal layers 31n and 31p, which are seed layers when the second metal layers 32n and 32p are formed by the electrolytic plating method, are discretely formed. Consider the case where it is placed. Before the second metal layers 32n and 32p reach the height of the upper surface of the second resin layer 22 in the vertical direction on the bottom surfaces of the openings 22n and 22p of the second resin layer 22, the second metal layers 32n and 32p are horizontally aligned. It is preferable to grow the entire region in the direction. For this purpose, it is necessary that the distance between the first metal layers 31 n and 31 p arranged discretely in the horizontal direction is shorter than twice the thickness of the second resin layer 22. Therefore, the difference in height between the upper surfaces of the second metal layers 32n and 32p and the upper surface of the second resin layer 22 according to the separation distance between the first metal layers 31n and 31p and the thickness of the second resin layer 22. An upper limit can be set.

  In addition, the shape of the upper surface of the 2nd metal layers 32n and 32p is not limited to this. The upper surfaces of the second metal layers 32n and 32p may be inclined flat surfaces or may have irregular shapes. Further, it is only necessary that the upper surfaces of the second metal layers 32n and 32p are formed so that at least a part thereof is lower than the upper surface of the second resin layer 22. The upper end may be higher than the upper surface of the second resin layer 22.

  The first metal layers 31n and 31p and the second metal layers 32n and 32p also function as a heat transfer path for radiating the heat generated by the light emitting element 1. Therefore, the one where the ratio of the volume of the metal with respect to the 1st resin layer 21 and the 2nd resin layer 22 is large is preferable.

As the first metal layers 31n and 31p and the second metal layers 32n and 32p, metals such as Cu, Au, and Ni can be suitably used. The first metal layers 31n and 31p and the second metal layers 32n and 32p may have a laminated structure using a plurality of types of metals. In particular, the second metal layers 32n and 32p whose upper surfaces are the mounting surfaces are at least the most suitable for preventing corrosion and improving the bondability with a mounting substrate using an Au alloy-based adhesive member such as Au-Sn eutectic solder. The upper layer is preferably formed of Au. In addition, when the lower layer portion of the second metal layers 32n and 32p is formed of a metal other than Au, such as Cu, the upper layer portion is formed of Ni / Au or Ni / Pd / in order to improve adhesion with Au. A laminated structure such as Au may be used.
Alternatively, solder such as Sn—Cu or Sn—Ag—Cu can be used as the adhesive member. In that case, it is preferable that the uppermost layer of the second metal layers 32n and 32p is made of a material that can provide good adhesion to the adhesive member to be used.
The first metal layers 31n and 31p and the second metal layers 32n and 32p can be formed by an electrolytic plating method. Details of the method of forming the first metal layers 31n and 31p and the second metal layers 32n and 32p will be described later.

[Implementation of light emitting device]
Next, with reference to FIG. 6, prevention of solder creeping when the light emitting device 100 is mounted on the mounting substrate will be described.
As shown in FIG. 6, the light emitting device 100 includes a mounting surface of the mounting substrate 91 provided with the wiring pattern 92 and a surface provided with the support 2, that is, the second resin of the second metal layers 32 n and 32 p. The face down mounting is performed so that the exposed surface from the layer 22 faces. Accordingly, the light emitting device 100 in FIG. 6 is upside down from FIG.
In addition, the light emitting device 100 has a configuration suitable for mounting by a reflow method using an adhesive member 93 such as Au—Sn eutectic solder.

  At the time of mounting, the adhesive member 93 provided in advance between the second metal layer 32n and the wiring pattern 92 and between the second metal layer 32p and the wiring pattern 92 is melted, and then the adhesive member 93 is cooled. Thus, the second metal layers 32n and 32p and the wiring pattern 92 are firmly bonded.

Here, when the adhesive member 93 is melted to be in a liquid state, the adhesive member 93 is formed between the surface of the second metal layer 32n and the corresponding wiring pattern 92, and the second metal layer 32p. The wiring pattern 92 is filled with the corresponding polarity.
Further, at least a part of the upper surface (lower surface in FIG. 6) of the second metal layers 32n and 32p is lower (higher in FIG. 6) than the upper surface (lower surface in FIG. 6) of the second resin layer 22. By doing so, a gap is formed in the openings 22n and 22p of the second resin layer 22, and the adhesive member 93 is accommodated in the gap. Furthermore, the second resin layer 22 becomes a wall, and excessive leakage of the adhesive member 93a to the outside is prevented.
This prevents excessive adhesive member 93a from creeping along the side surfaces of the support, that is, the side surfaces of the second resin layer 22 and the first resin layer 21.

  When the light emitting device 100 is mounted on the mounting substrate 91 by the reflow method, the amount of paste (solder paste) containing the adhesive member 93 supplied onto the wiring pattern 92 is the opening 22n of the second resin layer 22. , 22p is preferably determined in consideration of the volume of the gap. By supplying the paste so that the volume of the adhesive member 93, which is the metal in the supplied paste, is larger than the volume of the gap in the openings 22n and 22p of the second resin layer 22, the second metal layer 32n. 32p and the wiring pattern 92 can be more satisfactorily joined.

Further, as shown in FIG. 6, for example, an excessive adhesive member 93 a protrudes from between the second metal layers 32 n and 32 p and the wiring pattern 92, and further crawls up along the side surface of the second resin layer 22. However, since the step 23 is provided at the boundary between the second resin layer 22 and the first resin layer 21, the excessive adhesive member 93 a is blocked by the step 23, and further along the side surface of the first resin layer 21. It is prevented from crawling up.
As shown in FIG. 1, when the interval of the step 23 between the first resin layer 21 and the second resin layer 22 is d, the interval d is preferably about 1 μm to 10 μm, and preferably 1 μm to 5 μm. More preferably, it is about. As a result, it is possible to more effectively prevent the solder from creeping up.

  In the example shown in FIG. 6, since the step 21 b is also provided on the side surface of the first resin layer 21, the excessive adhesive member 93 a has a step at the boundary between the second resin layer 22 and the first resin layer 21. Even when climbing over 23 and scooping up along the side surface of the first resin layer 21, the excessive adhesive member 93a is trapped in the step 21b and further scooping up is suppressed. In addition, it is preferable that the space | interval of the level | step difference 21b formed in the side surface of the 1st resin layer 21 is comparable as the space | interval d of the level | step difference 23 between the above-mentioned 1st resin layer 21 and the 2nd resin layer 22. FIG.

Thus, at least a part of the upper surface (lower surface in FIG. 6) of the second metal layers 32n and 32p is lower than the upper surface (lower surface in FIG. 6) of the second resin layer 22 (higher in FIG. 6). By doing so, gaps are formed in the openings 22n and 22p of the second resin layer 22, and the adhesive member 93 is accommodated in the gaps to prevent leakage to the outside.
Furthermore, by providing a step 23 on the side surface of the resin layer composed of the first resin layer 21 and the second resin layer 22, preferably by further providing a step 21b, it is possible to prevent the adhesive member 93a from creeping up excessively, It is possible to more reliably prevent the solder from reaching the exposed side surface of the semiconductor laminate 12.

[Operation of light emitting device]
Next, the operation of the light emitting device 100 will be described with reference to FIGS.
When an external power source is connected to the second metal layers 32n and 32p, which are positive and negative electrodes for connection to the outside, via the mounting substrate 91, the light emitting device 100 emits light via the first metal layers 31n and 31p. A current is supplied between the n-side electrode 13 and the p-side electrode 15 of the element 1. When a current is supplied between the n-side electrode 13 and the p-side electrode 15, the active layer 12a of the light emitting element 1 emits light.

The light emitted from the active layer 12a of the light emitting element 1 propagates through the semiconductor stacked body 12, is emitted from the lower surface (upper surface in FIG. 6) or the side surface of the light emitting element 1, and is extracted outside.
The light propagating upward in the light emitting element 1 (downward in FIG. 6) is reflected by the light reflecting electrode 14a, and is emitted from the lower surface (upper surface in FIG. 6) of the light emitting element 1 to the outside. It is taken out.

[Method for Manufacturing Light Emitting Device]
Next, a method for manufacturing the light emitting device 100 shown in FIG. 1 will be described with reference to FIG.
As shown in FIG. 7, the method for manufacturing the light emitting device 100 includes a semiconductor laminate forming step S101, a light reflecting electrode forming step S102, a cover electrode forming step S103, an n-type semiconductor layer exposing step S104, an interlayer insulating film. Forming step S105, pad electrode forming step S106, mask forming step S107, first resin layer forming step S108, first metal layer forming step S109, second resin layer forming step S110, and second metal layer forming The process includes a process S111, a mask removal process S112, a pad electrode separation process S113, a growth substrate removal process S114, and a singulation process S115, and each process is performed in this order.
Further, the semiconductor stacked body forming step S101 to the pad electrode forming step S106 are included as a wafer preparation step for preparing the light emitting element 1 in a wafer state, and the light reflecting electrode forming step S102 and the cover electrode forming step S103 are included in the entire surface electrode forming step. Included as

Hereinafter, each step will be described in detail with reference to FIGS. 8 to 14 (refer to FIGS. 1 to 5 and 7 as appropriate). 8 to 14, the shape, size, and positional relationship of each member may be appropriately simplified or exaggerated in some cases.
Further, in the manufacturing process of the light emitting device 100 at the wafer level, each process is performed in a state where a large number of light emitting elements are two-dimensionally arranged. FIGS. 8 to 14 show two light-emitting elements in a cross-sectional view and 2 × 2 = 4 light-emitting elements in a plan view among a plurality of light-emitting element arrays.
The cross-sectional views shown in FIG. 8 to FIG. 14 correspond to the II line in FIG. 1A, similarly to the cross-sectional view shown in FIG. Is shown.

  In the method for manufacturing a light-emitting device according to an embodiment of the present invention, first, a wafer preparation process is performed in which a light-emitting element 1 in which a plurality of light-emitting elements 1 are arranged on a single growth substrate 11 is prepared. In the wafer preparation process, as described above, the semiconductor laminate forming process S101, the light reflecting electrode forming process S102, the cover electrode forming process S103, the n-type semiconductor layer exposing process S104, the interlayer insulating film forming process S105, Pad electrode forming step S106.

  First, in the semiconductor stacked body forming step S101, as shown in FIG. 8A, an n-type semiconductor layer 12n, active layers 12a and p are formed on the upper surface of a growth substrate 11 made of sapphire or the like using the semiconductor material described above. The semiconductor stacked body 12 is formed by sequentially stacking the type semiconductor layers 12p.

  Next, in the light reflecting electrode forming step S102, as shown in FIG. 8B, the light reflecting electrode 14a is formed in a predetermined region. The light reflecting electrode 14a can be formed by a lift-off method. That is, after forming a resist pattern having an opening in a region where the light reflecting electrode 14a is disposed by photolithography, a metal film having good reflectivity such as Ag is formed on the entire surface of the wafer by sputtering or vapor deposition. Film. Then, by removing the resist pattern, the metal film is patterned and the light reflecting electrode 14a is formed.

  Next, in the cover electrode forming step S103, as shown in FIG. 8C, the cover electrode 14b is formed so as to cover the upper surface and side surfaces of the light reflecting electrode 14a. The cover electrode 14b is formed by forming a metal film on the entire surface of the wafer by sputtering or vapor deposition using a predetermined metal material, and then forming a resist pattern having an opening in a region where the cover electrode 14b is disposed by photolithography. Form. Then, the metal film is patterned by etching using the resist pattern as a mask, and then the cover electrode 14b is formed by removing the resist pattern.

Next, in the n-type semiconductor layer exposing step S104, as shown in FIG. 8D, the p-type semiconductor layer 12p, the active region of the partial region of the semiconductor stacked body 12 as shown in FIG. Part of the layer 12a and the n-type semiconductor layer 12n is removed by dry etching to form a first exposed portion 12b and a second exposed portion 12c where the n-type semiconductor layer 12n is exposed on the bottom surface.
Note that an etching mask (not shown) at the time of dry etching is formed so as to cover the cover electrode 14b by photolithography. Therefore, in FIG. 8D, for convenience, the end portion of the cover electrode 14b and the end portion of the p-type semiconductor layer 12p (that is, the end portions of the first exposed portion 12b and the second exposed portion 12c) coincide. Although described, the p-type semiconductor layer 12p is left in a range wider than the region where the cover electrode 14b is disposed by the thickness of the etching mask provided on the side surface of the cover electrode 14b.

Next, in an interlayer insulating film forming step (insulating film forming step) S105, as shown in FIG. 8E, a predetermined insulating material is used to form part of the upper surfaces of the first exposed portion 12b and the cover electrode 14b. Then, an interlayer insulating film 16 having an opening 16n and an opening 16p is formed. Further, the interlayer insulating film 16 is formed so as to open also at a part of the bottom surface of the second exposed portion 12 c that is a region along the boundary line 40. Note that the entire bottom surface of the second exposed portion 12c may be covered with the interlayer insulating film 16 without having an opening.
The interlayer insulating film 16 can be patterned by forming an insulating film over the entire surface of the wafer by sputtering or the like, forming a resist pattern having an opening in the predetermined region, and etching the insulating film.

Next, in a pad electrode formation step (electrode formation step) S106, as shown in FIG. 9, a metal layer 50 is formed on the interlayer insulating film 16 by, for example, sputtering. The metal layer 50 can be patterned by, for example, a lift-off method.
The metal layer 50 becomes the n-side electrode 13 and the p-side electrode 15 which are pad electrodes as the light emitting element 1. Therefore, the metal layer 50 is formed in the opening 16n of the interlayer insulating film 16 provided in the region that becomes the n-side electrode 13 (the region that has been hatched with a right-down oblique line in FIG. 9), and the n-type semiconductor layer 12n. It is connected. In addition, the metal layer 50 is connected to the cover electrode 14b at the opening 16p of the interlayer insulating film 16 provided in a region to be the p-side electrode 15 (a region hatched with a right-up oblique line in FIG. 9). ing.

In the region of each light emitting element 1 partitioned by the boundary line 40, the metal layer 50 is formed separately so that the region serving as the n-side electrode 13 and the region serving as the p-side electrode 15 do not contact each other. Are connected in a region along the boundary line 40, and are formed so that the metal layers 50 of all the light-emitting elements 1 arranged on the wafer are conductive.
The metal layer 50 is used as a seed layer when the first metal layers 31n and 31p are formed by an electrolytic plating method in the first metal layer forming step S109, which is a subsequent step, and the second metal layer 50 is formed in the second metal layer forming step S111. It is also used as a seed layer when the metal layers 32n and 32p are formed by an electrolytic plating method, that is, as a current path. In the present embodiment, the metal layer 50 to be the n-side electrode 13 and the p-side electrode 15 that are pad electrodes is formed so as to serve also as a seed layer for electrolytic plating, so that the manufacturing process can be simplified.

Next, in the mask formation step S107, as shown in FIG. 10, a mask 33 that covers the metal layer 50 formed on the second exposed portion 12c, which is a region along the boundary line 40, is formed. The mask 33 is formed using an insulating material such as a photoresist or SiO ₂ . The mask 33 is an insulating mask for preventing plating growth on the second exposed portion 12c, which is a boundary region, in the first metal layer forming step S109 and the second metal layer forming step S111 which are subsequent steps.
The mask 33 is made of a material different from the first resin layer 21 and the second resin layer 22 so that the mask 33 can be selectively removed while leaving the first resin layer 21 and the second resin layer 22 in the mask removal step S112. Formed with.
The mask 33 is lower than the upper surface of the first resin layer 21 (see FIG. 11A) formed in the next first resin layer forming step S108, and the opening of the first resin layer 21. It is preferable to form it with a width wider than that of the portion 21a (see FIG. 11A). Thereby, a step 21b (see FIG. 12B) can be formed on the side surface of the first resin layer 21.

  Next, in the first resin layer forming step S108, as shown in FIG. 11A, the first resin layer 21 is formed on the metal layer 50 by photolithography. The first resin layer 21 is formed so as to have an opening 21 n on a region that becomes the n-side electrode 13 of the metal layer 50 and an opening 21 p on a region that becomes the p-side electrode 15 of the metal layer 50. . Further, the first resin layer 21 has an opening 21 a on a region along the boundary line 40, and is formed separately for each region of each light emitting element 1. The opening 21 a is preferably formed with a width narrower than the width of the mask 33.

Next, in the first metal layer forming step S109, as shown in FIG. 11B, the first metal layers 31n and 31p are formed in the openings 21n and 21p of the first resin layer 21 by electrolytic plating. . As described above, the first metal layers 31n and 31p use the metal layer 50 formed so as to be conductive as a whole as a seed layer serving as a current path for electrolytic plating, and the opening 21n of the first resin layer 21. , 21p.
In this step, the first resin layer 21 is opened in the second exposed portion 12c (see FIG. 10B), which is a region along the boundary line 40, but the metal layer 50 is covered by the mask 33. Therefore, the plating does not grow. Thereby, since a thick plating layer is not formed in the boundary region, the unnecessary metal layer 50 can be easily removed in the pad electrode separation step S113 which is a subsequent step.

  In the example shown in FIG. 11B, the first metal layers 31n and 31p are formed so as to protrude from the first resin layer 21, but the present invention is not limited to this. The upper surfaces of the layers 31n and 31p may be formed to be the same as or lower than the upper surface of the first resin layer 21.

Next, in the second resin layer forming step S110, as shown in FIG. 11C, the second resin layer 22 is formed on the first resin layer 21 by photolithography. The second resin layer 22 has an opening 22n including a region where the first metal layer 31n is formed and an opening 22p including a region where the first metal layer 31p is formed in a plan view. Formed. Furthermore, the second resin layer 22 has an opening 22 a on a region along the boundary line 40, and is formed separately for each region of each light emitting element 1.
Further, in the region along the boundary line 40, that is, in the outer edge portion of the completed light-emitting device 100, the side surface of the second resin layer 22 is spaced from the side surface of the first resin layer 21 in the plan view. A step 23 of d is formed.

  Next, in the second metal layer forming step S111, as shown in FIG. 12A, the second metal layers 32n and 32p are formed in the openings 22n and 22p of the second resin layer 22 by electrolytic plating. . As described above, the second metal layers 32n and 32p are formed by using the metal layer 50 and the first metal layers 31n and 31p, which are formed so as to be conductive as a whole, as seed layers for electrolytic plating, that is, current paths. The two resin layers 22 are formed by plating in the openings 22n and 22p. At this time, the electrolytic plating is terminated in a state where at least a part of the upper surfaces of the second metal layers 32n and 32p is lower than the upper surface of the second resin layer 22.

  Note that when the second metal layers 32n and 32p are formed by the electrolytic plating method, the plating layers grow isotropically from the portions of the first metal layers 31n and 31p exposed from the first resin layer 21. For this reason, when the exposed surfaces of the first metal layers 31n and 31p are not uniformly arranged on the entire bottom surfaces of the openings 22n and 22p of the second resin layer 22, an uneven shape is formed on the upper surface after plating growth. May be. Therefore, a second metal layer 32n is formed by forming a metal film on the entire bottom surface of the openings 22n and 22p of the second resin layer 22 by sputtering or the like and performing electrolytic plating using the metal film as a current path. , 32p may be formed to be flatter.

Further, the upper surfaces of the second metal layers 32n and 32p after the plating growth can be made flatter by arranging them closely so that the horizontal separation distance between the plurality of first metal layers 31n and 31p is shortened. it can.
Further, except for the region directly above the first exposed portion 12b, one continuous first metal layer is provided on each of the n side and the p side below the substantially entire region of the openings 22n and 22p of the second resin layer 22 in plan view. 31n and 31p may be formed. Thereby, the upper surfaces of the second metal layers 32n and 32p can be formed more flat.

  In the example shown in FIG. 12A, the upper surfaces of the second metal layers 32n and 32p are formed as flat surfaces, and the whole is formed so as to be lower than the upper surface of the second resin layer 22. However, the present invention is not limited to this. You may make it form so that the upper surface of the 2nd metal layers 32n and 32p may protrude from the upper surface of the 2nd resin layer 22, or may be lower than the upper surface of the 2nd resin layer 22. FIG. Further, the upper surfaces of the second metal layers 32n and 32p may be formed flat or may be formed with irregularities.

Next, in the mask removal step S112, as shown in FIG. 12B, the mask 33 is removed using an appropriate solvent or chemical. Further, the mask 33 can be removed by dry etching.
By removing the mask 33, the metal layer 50 formed in the region along the boundary line 40 is exposed on the bottom surface of the opening 21 a of the first resin layer 21. Further, by removing the mask 33, a step 21 b is formed on the lower side surface of the first resin layer 21.

  Next, in the pad electrode separation step (electrode separation step) S113, as shown in FIG. 13, the metal layer 50 exposed on the bottom surface of the opening 21a of the first resin layer 21 is removed by etching. Thereby, the metal layer 50 is separated for each light emitting device 100, and also in each light emitting device 100, a region to be the n-side electrode 13 and a region to be the p-side electrode 15 are separated.

  When the metal layer 50 is etched, a mask may be provided on the upper surfaces of the second metal layers 32n and 32p so that the second metal layers 32n and 32p are not etched. If the second metal layers 32n and 32p are sufficiently thicker than the metal layer 50, the thickness of the second metal layers 32n and 32p may be reduced by the same amount as the thickness of the metal layer 50. The metal layer 50 may be etched without providing a mask on the upper surfaces of the second metal layers 32n and 32p.

Next, in the growth substrate removing step S114, as shown in FIG. 14, the growth substrate 11 is removed by peeling off by an LLO (laser lift-off) method, a chemical lift-off method, or the like.
The growth substrate removal step S114 is not an essential step, and the growth substrate 11 may not be peeled off. Further, instead of peeling off the growth substrate 11, the lower surface side of the growth substrate 11 may be polished and thinned.
Alternatively, after the growth substrate 11 is peeled off, the lower surface of the semiconductor stacked body 12 may be wet etched to form an uneven shape.
Furthermore, a phosphor that converts the wavelength of light emitted from the light-emitting element 1 is contained on the lower surface side that is the light extraction surface of the light-emitting device 100 after the growth substrate 11 is peeled off or without peeling off the growth substrate 11. A phosphor layer may be provided.

Next, in the singulation step S115, the light emitting device 100 is singulated by cutting the wafer along the boundary line 40 shown in FIG. 14 by a dicing method or a scribing method. As shown in FIG. 1B, the side surface that is the outer edge of the semiconductor stacked body 12 formed by singulation is not covered with either the interlayer insulating film 16 or the first resin layer 21 and is exposed. .
Since the first resin layer 21 and the second resin layer 22 are formed separately for each light emitting device 100 so as to have the opening 21a and the opening 22a in regions along the boundary line 40, respectively. By simply cleaving the semiconductor stacked body 12, it can be easily separated into individual pieces.

<Modification>
Next, with reference to FIG.15 and FIG.16, the light-emitting device which concerns on the modification of embodiment of this invention is demonstrated.
[Configuration of light emitting device]
As illustrated in FIGS. 15 and 16, the light emitting device 100A according to the modification includes the second metal layers 32An and 32Ap instead of the second metal layers 32n and 32p in the light emitting device 100 illustrated in FIGS. And the growth substrate 11 is formed on the lower surface side of the semiconductor stacked body 12. Since the other structure of the light emitting device 100A is the same as that of the light emitting device 100, the same reference numerals are given and description thereof is omitted as appropriate.
Although the light emitting device 100A according to the modification has the configuration including the growth substrate 11, it may be configured such that the growth substrate 11 is removed as in the light emitting device 100. Further, a phosphor layer may be provided on the lower surface of the semiconductor stacked body 12 instead of the growth substrate 11 or on the lower surface side of the growth substrate 11.

The second metal layers 32An and 32Ap of the light emitting device 100A have an upper surface with an uneven shape, and a portion of the upper surface is formed to be lower than the upper surface of the second resin layer 22, and the uneven shape. The upper end of the convex portion is formed so as to be higher than the upper surface of the second resin layer 22.
In addition, you may form so that the upper end of the convex part of 2nd metal layer 32An and 32Ap may become the same height as the upper surface of the 2nd resin layer 22, or may become low.

By making the upper surface of at least a part of the second metal layers 32An and 32Ap lower than the upper surface of the second resin layer 22, the same effect as the light emitting device 100 described above can be obtained at the time of mounting.
Specifically, as shown in FIGS. 15 and 16, when the second metal layers 32An and 32Ap have a shape in which a plurality of substantially hemispherical convex portions are adjacent to each other, adjacent portions of the convex portions are adjacent to each other. That is, the height of the portion that becomes the valley may be lower than the height of the upper surface of the second resin layer 22. As a result, the adhesive material 93 accommodated in the portion of the second metal layer 32An, 32Ap that is provided lower than the upper surface of the second resin layer 22 is surrounded by the second resin layer 22, so that the adhesive material 93 is The amount leaked to the outside can be reduced.

  Furthermore, by configuring the top surfaces of the second metal layers 32An and 32Ap to have a concavo-convex shape, the contact area between the surface of the second metal layers 32An and 32Ap and the adhesive member 93 is increased when the light emitting device 100A is mounted. To do. For this reason, both adhesiveness improves and it can make it hard to leave | separate the fuse | melted adhesive member 93 from the surface of 2nd metal layer 32An and 32Ap. Thereby, it is possible to more effectively prevent the creeping of the excessive adhesive member 93a.

Since the operation of the light emitting device 100A is the same as that of the light emitting device 100, description thereof is omitted.
Further, since the light emitting device 100A can be manufactured in the same manner as the light emitting device 100, detailed description thereof is omitted.
The concave and convex shapes on the top surfaces of the second metal layers 32An and 32Ap are such that the first metal layers 31n and 31p are formed on the bottom surfaces of the openings 22n and 22p of the second resin layer 22 in the second metal layer forming step S111. It is formed by disposing so as to be discretely exposed at a plurality of locations, and performing plating growth by an electrolytic plating method using the first metal layers 31n and 31p as current paths. In the electrolytic plating, a plating layer grows isotropically, that is, in a hemispherical shape, from the exposed upper surfaces of the first metal layers 31n and 31p. For this reason, the second metal layers 32An and 32Ap are shaped such that the same number of ten balls as the first metal layers 31n and 31p are packed in the openings 22n and 22p of the second resin layer 22 while being crushed. Formed.

In addition, the shape of the upper surface of 2nd metal layer 32An, 32Ap is changed by changing suitably the magnitude | size, shape, number, arrangement | positioning location, etc. of the exposed surface from the 1st resin layer 21 of 1st metal layer 31n, 31p. Can be changed.
The region where the upper surfaces of the second metal layers 32An and 32Ap are lower than the upper surface of the second resin layer 22 is adjusted by the concentration of the plating solution, the temperature, the plating time, etc. when performing the electrolytic plating. Can do.

  Although not shown, in the individualization step S115 (see FIG. 7), in addition to the semiconductor stacked body 12, the growth substrate 11 is moved along the boundary line 40 (see FIG. 14) by a dicing method or a scribing method. By cleaving, the light emitting device 100A can be singulated.

  The light emitting device and the method for manufacturing the same according to the present invention have been specifically described above by the embodiments for carrying out the invention. However, the gist of the present invention is not limited to these descriptions, and the scope of the claims is as follows. It must be interpreted widely based on the description. Needless to say, various changes and modifications based on these descriptions are also included in the spirit of the present invention.

1 Light emitting device (semiconductor light emitting device)
DESCRIPTION OF SYMBOLS 11 Growth substrate 12 Semiconductor laminated body 12n n-type semiconductor layer 12a active layer 12p p-type semiconductor layer 12b 1st exposed part 12c 2nd exposed part 13 n side electrode 14 whole surface electrode 14a light reflecting electrode 14b cover electrode 15 p side electrode 16 interlayer Insulating film (insulating film)
2 Support 21 First Resin Layer 21a Opening 21b Step 21n Opening 21p Opening 21p Opening 22 Second Resin Layer 22a Opening 22n Opening 22p Opening 23 Step 31n First Metal Layer (n-side First Metal Layer)
31p first metal layer (p-side first metal layer)
32n, 32An second metal layer (n-side second metal layer)
32p, 32Ap second metal layer (p-side second metal layer)
33 mask 40 boundary line 50 metal layer 91 mounting substrate 92 wiring pattern 93 adhesive member 93a excessive adhesive member 100, 100A light emitting device

Claims (7)

A semiconductor light emitting device comprising: a semiconductor laminate; and an electrode provided on one surface of the semiconductor laminate;
A first resin layer provided on the one surface side of the semiconductor laminate;
A second resin layer provided on the first resin layer,
The first resin layer has a first metal layer electrically connected to the electrode inside,
The second resin layer has a second metal layer electrically connected to the first metal layer inside,
The upper surface of the second metal layer is exposed from the second resin layer and is a mounting surface for connecting to the outside.
The height from the said semiconductor laminated body is a light-emitting device characterized by at least one part of the upper surface of the said 2nd metal layer being lower than the upper surface of the said 2nd resin layer.   The light emitting device according to claim 1, wherein an upper surface of the second metal layer has an uneven shape.   The light-emitting device according to claim 2, wherein the uneven shape is a shape in which a plurality of convex portions having a substantially hemispherical shape are adjacent to each other.   4. The light emitting device according to claim 3, wherein a height from the semiconductor stacked body is such that a portion where the plurality of convex portions are adjacent is lower than an upper surface of the second resin layer. A method of manufacturing a light emitting device including a semiconductor light emitting element having a semiconductor stacked body and an electrode provided on one surface of the semiconductor stacked body,
A wafer preparation step of preparing a wafer formed by arranging a plurality of the semiconductor light emitting elements;
A first resin layer forming step of forming a first resin layer having an opening in a part of a region where the electrode is provided on one surface side of the semiconductor laminate;
A first metal layer forming step of forming a first metal layer in the opening of the first resin layer;
A second resin layer forming step of forming a second resin layer having an opening in a region where the first metal layer is formed on the first resin layer;
A second metal layer forming step of forming a second metal layer in the opening of the second resin layer;
Cutting the wafer along a boundary line of the semiconductor light emitting element, thereby dividing the wafer into a plurality of semiconductor light emitting elements,
The second metal layer is formed such that the height from the semiconductor stacked body is such that at least a part of the upper surface of the second metal layer is lower than the upper surface of the second resin layer. Device manufacturing method.   In the first resin layer forming step and the second resin layer forming step, the first resin layer and the second resin layer are each formed using a photosensitive resin material by a photolithography method. The manufacturing method of the light-emitting device of Claim 5. In the first resin layer forming step, after forming the first resin layer having a plurality of openings, in the first metal layer forming step, the plurality of openings formed in the first resin layer, respectively, Forming a first metal layer;
The method of manufacturing a light emitting device according to claim 5 or 6, wherein the second metal layer forming step is formed by an electrolytic plating method using a plurality of the first metal layers as seed layers.

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