JP2015518179A5 - - Google Patents
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- JP2015518179A5 JP2015518179A5 JP2015504738A JP2015504738A JP2015518179A5 JP 2015518179 A5 JP2015518179 A5 JP 2015518179A5 JP 2015504738 A JP2015504738 A JP 2015504738A JP 2015504738 A JP2015504738 A JP 2015504738A JP 2015518179 A5 JP2015518179 A5 JP 2015518179A5
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- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000003287 optical Effects 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N Neodymium Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims 4
- 230000005611 electricity Effects 0.000 claims 1
- 230000000051 modifying Effects 0.000 description 21
- 239000011777 magnesium Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- RPEUFVJJAJYJSS-UHFFFAOYSA-N zinc;oxido(dioxo)niobium Chemical compound [Zn+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O RPEUFVJJAJYJSS-UHFFFAOYSA-N 0.000 description 1
Description
更に、本発明は、例えば、１１００ｐｍ／Ｖより大きな横有効直線Ｅ−Ｏ係数γT C及び最大５２７ｐｍ／Ｖの縦有効直線Ｅ−Ｏ係数γl Cを示し、(ドープされた若しくはドープされていないＰＭＮ−ＰＴ、ＰＩＮ−ＰＭＮ−ＰＴ又はＰＺＮ−ＰＴ強誘電体結晶から作られ得る）超高直線Ｅ−Ｏ係数γCを示し、非常に多くの変調、コミュニケーション、レーザー及び産業用途において、２００Ｖ未満の非常に低い半波長電圧Ｖl π及び８７Ｖ未満のＶT πをもたらすような電気光学（Ｅ−Ｏ）結晶素子に関する。同様に、本発明は、提案結晶素子は、結果を与える手段として有効であることに付いて言及し、別の言い方をすれば、提案結晶素子は、以下の有効な構造と同じものを含む製品、システム及び装置において２００Ｖ未満のＶl π及び８７Ｖ未満のＶT πの非常に低い半波長電圧をもたらす１１００ｐｍ／Ｖよりも大きい横有効直線Ｅ−Ｏ係数γT C及び最大５２７ｐｍ／Ｖの縦有効直線Ｅ−Ｏ係数γ l C を提供するための手段である。 Furthermore, the present invention shows, for example, a lateral effective straight line EO coefficient γ T C greater than 1100 pm / V and a longitudinal effective straight line EO coefficient γ l C of up to 527 pm / V, (doped or doped). Not very PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystal), exhibiting a very high linear EO coefficient γ C , 200V in many modulation, communication, laser and industrial applications The present invention relates to an electro-optic (EO) crystal element that provides a very low half-wave voltage V 1 π of less than and V T π of less than 87V. Similarly, the present invention mentions that the proposed crystal element is effective as a means of giving results, in other words, the proposed crystal element includes the same effective structure as follows: A transverse effective straight line EO coefficient γ T C greater than 1100 pm / V and a longitudinal of up to 527 pm / V resulting in a very low half-wave voltage of V l π less than 200 V and V T π less than 87 V in the system and apparatus. It is a means for providing an effective straight line EO coefficient γ l C.
Ｅ−Ｏ単結晶材料は、ＰＭＮ−ＰＴ（マグネシウムニオブ酸鉛−チタン酸鉛）若しくはＰＩＮ−ＰＭＮ−ＰＴ（インジウムニオブ酸鉛−マグネシウムニオブ酸鉛−チタン酸鉛）又はＰＺＮ−ＰＴ（亜鉛ニオブ酸鉛−チタン酸鉛）若しくは上記のドープ結晶から選択され得る。発明は、特に、再分極可能設計、即ち結晶中のポーリング方向＜０１１＞に平行な応用電場に関する。Ｅ−Ｏ結晶素子は、（１）（操作温度-３０℃〜８５℃で）３５０〜１１００ｐｍ／Ｖの範囲と同じ高さで有効横直線Ｅ−Ｏ係数γT C及び４５Ｖ(ｌ／ｄ＝1)未満の非常に低い半波長電圧ＶT πを示し、（２）（操作温度-３０℃〜１１０℃で）２８０〜８００ｐｍ／Ｖの範囲と同じ高さで有効縦直線Ｅ−Ｏ係数γl C及び３００Ｖ（ｌ／ｄ＝１）未満、好ましくは約２００Ｖ、より好ましくは約１５０Ｖ未満の非常に低い半波長電圧Ｖl πを示す。再ポーリング能の性質に加えて、超高有効Ｅ−Ｏ係数γC及び非常に低いＶπが、新世代のＥ−Ｏ結晶素子として各種のＥ−Ｏ装置への発明結晶素子の使用を可能にしている。特に、しかし限定されないが、Ｅ−Ｏ切り替え、Ｅ−Ｏ位相変調、Ｅ−Ｏ振幅変調、レーザービーム変調及び光学複屈折装置に利用可能である。 The EO single crystal material is PMN-PT (lead magnesium niobate-lead titanate) or PIN-PMN-PT (lead indium niobate-lead magnesium niobate-lead titanate) or PZN-PT (zinc niobate). Lead-lead titanate) or the above doped crystals. The invention particularly relates to a repolarizable design, ie an applied electric field parallel to the poling direction <011> in the crystal. The EO crystal element has (1) an effective horizontal straight line EO coefficient γ T C and 45 V (l / d = at the same height as the range of 350 to 1100 pm / V (at an operating temperature of −30 ° C. to 85 ° C.). 1) showing a very low half-wave voltage V T π of less than (2) (at an operating temperature of −30 ° C. to 110 ° C.) an effective longitudinal straight line EO coefficient γ at the same height as the range of 280 to 800 pm / V It exhibits a very low half-wave voltage V l π of l C and less than 300 V (l / d = 1), preferably about 200 V, more preferably less than about 150 V. In addition to the nature of the re-polling ability, the ultra-high effective EO coefficient γ C and very low V π enable the use of the inventive crystal element in various EO devices as a new generation EO crystal element I have to. In particular, but not limited to, EO switching, EO phase modulation, EO amplitude modulation, laser beam modulation and optical birefringence devices.
本発明の一つの態様にしたがって、電気光学結晶素子を製造する方法が提供され、以下の化学式の一つによって表わされる化学組成を有する強誘電体結晶を作成する工程と、
（Ｉ）Pb(Mg1/3Nb2/3)1-xTixO3 式中ｘは０．２２〜０．３８として定義、
若しくは
（ＩＩ）Pb(Zn1/3Nb2/3)1-ｙTiｙO3 式中ｙは０．０４〜０．１１として定義され、
全ての結晶素子は、最大６％（質量％）のランタン（Ｌａ）、アンチモン（Ｓｂ）、最大８％(質量％）のタンタル（Ｔａ）、最大３１％(質量％）のインジウム（Ｉｎ）、最大５％(質量％）のジルコニウム（Ｚｒ）及びセリウム（Ｃｅ）、エルビウム（Ｅｒ）、テルビウム（Ｔｂ）、スカンジウム（Ｓｃ）並びにネオジム（Ｎｄ）からなる群から選択された最大８％(質量％）の少なくとも一つの希土類元素と一緒にドープ又は共ドープすることができ、
（０１１）にその結晶素子をスライスし、ウェハースを形成する工程と、
９５℃未満の温度範囲で、抗電場（Ｅｃ）の２倍の下で、＜０１１＞方向にその結晶素子をポーリングすることによってｍｍ２対称構造で分極する工程とを含む。
In accordance with one aspect of the present invention, a method of manufacturing an electro-optic crystal element is provided, the method comprising creating a ferroelectric crystal having a chemical composition represented by one of the following chemical formulas:
(I) Pb (Mg 1/3 Nb 2/3 ) 1-x Ti x O 3 where x is defined as 0.22 to 0.38,
Or (II) Pb (Zn 1/3 Nb 2/3 ) 1-y Ti y O 3 where y is defined as 0.04 to 0.11;
All crystal elements consist of up to 6% (mass%) lanthanum (La), antimony (Sb), up to 8% (mass%) tantalum (Ta), up to 31% (mass%) indium (In), Up to 5% (mass%) of zirconium (Zr) and cerium (Ce), erbium (Er), terbium (Tb), scandium (Sc) and up to 8% (mass%) selected from the group consisting of neodymium (Nd) ) And at least one rare earth element can be doped or co-doped,
(011) slicing the crystal element to form a wafer;
At a temperature range of less than 95 ° C., under a double anti-electric field (Ec), a step of polarization in mm2 symmetric structure by polling the crystal element in the <011> direction.
本発明の別の態様にしたがって、電気光学結晶素子を製造する方法が提供され、分極の工程が単一ドメイン並びに複数のナノドメイン構造の一つをもたらす。 In accordance with another aspect of the present invention, a method for fabricating an electro-optic crystal element is provided, wherein the step of polarization results in a single domain as well as one of a plurality of nanodomain structures.
本発明の別の態様にしたがって、横モード結晶素子を提供する電気光学結晶素子及び＜０１１＞分極を提供し、室温２０℃で５２７ｐｍ／Ｖよりも大きい横有効Ｅ−Ｏ係数γT C及び８７．５Ｖ（ｌ／ｄ＝１）よりも小さい半波長電圧Ｖ T πを与える、横モード結晶素子を製造する方法が提供される。 In accordance with another aspect of the present invention, an electro-optic crystal element providing a transverse mode crystal element and <011> polarization is provided, and a transverse effective EO coefficient γ T C and 87 greater than 527 pm / V at room temperature 20 ° C. .5V (l / d = 1) gives a small half-wave voltage V T [pi than, a method for producing a transverse mode crystal device is provided.
本発明の別の態様にしたがって、縦モード結晶素子上に透明な電極をコーティングしつつ縦モード結晶素子を提供する電気光学結晶素子及び室温２０℃で４２７ｐｍ／Ｖよりも大きい縦有効Ｅ−Ｏ係数γl C及び３００Ｖよりも小さいＶl πの＜０１１＞分極を提供する縦モード結晶素子を製造する方法が提供される。 In accordance with another aspect of the present invention, an electro-optic crystal element providing a longitudinal mode crystal element while coating a transparent electrode on the longitudinal mode crystal element, and a longitudinal effective EO coefficient greater than 427 pm / V at room temperature 20 ° C. A method is provided for fabricating a longitudinal mode crystal device that provides <011> polarization of γ l C and V l π less than 300V.
本発明の別の態様にしたがって、電気光学結晶素子を製造する方法が提供され、下記化学式によって表わされる化学組成を有する強誘電体結晶を作成する工程と、
(III) y*[Pb(In1/2Nb1/2)O3]-(1-y)*[Pb(Mg1/3Nb2/3)1-xTixO3]
式中ｘは、０．００〜０．３５として定義、
ｙは０．００〜０．３５として定義され、
その結晶素子を（０１１）ウェハースにスライスする工程と、
９５℃未満の温度範囲で、抗電場（Ｅｃ）の２倍の下で、＜０１１＞方向にその結晶素子をポーリングすることによってｍｍ２対称構造で分極する工程とを含む。
According to another aspect of the present invention, there is provided a method of manufacturing an electro-optic crystal element, and producing a ferroelectric crystal having a chemical composition represented by the following chemical formula:
(III) y * [Pb (In 1/2 Nb 1/2 ) O 3 ]-(1-y) * [Pb (Mg 1/3 Nb 2/3 ) 1-x Ti x O 3 ]
Where x is defined as 0.00 to 0.35,
y is defined as 0.00-0.35,
Slicing the crystal element into a (011) wafer;
At a temperature range of less than 95 ° C., under a double anti-electric field (Ec), a step of polarization in mm2 symmetric structure by polling the crystal element in the <011> direction.
本発明の別の態様にしたがって、電気光学結晶素子を製造する方法が提供され、式IIIに従って、更に工程は、横モード結晶素子及び＜０１１＞分極を提供し、室温２０℃で５００ｐｍ／Ｖよりも大きい横有効Ｅ−Ｏ係数γT C及び、１２Ｖ（ｌ／ｄ＝７）よりも小さい半波長電圧ＶT πを与える横モード結晶素子を提供する工程を含む。 In accordance with another aspect of the present invention, a method of manufacturing an electro-optic crystal element is provided, and according to Formula III, the further step provides a transverse mode crystal element and <011> polarization , from 500 pm / V at room temperature 20 ° C. Providing a lateral mode crystal element that provides a lateral effective EO coefficient γ T C that is greater than 1 V and a half-wave voltage V T π that is less than 12 V (l / d = 7 ).
本発明の別の態様にしたがって、電気光学結晶素子を製造する方法が提供され、縦モード結晶素子を提供する工程と、縦モード結晶素子上に透明な電極をコーティングする工程を含み、縦モード結晶素子が、室温２０℃で４２７ｐｍ／Ｖよりも大きい縦有効Ｅ−Ｏ係数γl C及び３００Ｖよりも小さいＶl πの＜０１１＞分極を提供する。 In accordance with another aspect of the present invention, there is provided a method of manufacturing an electro-optic crystal element, the method comprising providing a longitudinal mode crystal element and coating a transparent electrode on the longitudinal mode crystal element, the longitudinal mode crystal The device provides a longitudinal effective EO coefficient γ 1 C greater than 427 pm / V at room temperature 20 ° C. and <011> polarization with V l π less than 300V.
本発明の別の態様にしたがって、振幅変調器及び位相変調器の一つであるシステムは、式IIIに従う方法によって製造される縦モード電気光学結晶素子及び室温２０℃で４２７ｐｍ／Ｖよりも大きい縦有効Ｅ−Ｏ係数γl C及び３００Ｖよりも小さいＶl πの＜０１１＞分極を提供するための手段を含む縦モード電気光学結晶素子を備える電気光学システムが提供される。 In accordance with another aspect of the present invention, a system that is one of an amplitude modulator and a phase modulator includes a longitudinal mode electro-optic crystal device manufactured by a method according to Formula III and a longitudinal mode greater than 427 pm / V at 20 ° C. An electro-optic system is provided comprising a longitudinal mode electro-optic crystal element including means for providing an effective EO coefficient γ l C and <011> polarization of V l π less than 300V.
本発明の別の態様にしたがって、振幅変調器及び位相変調器の一つであるシステムは、式I若しくは式IIに従う方法によって製造される横モード電気光学結晶素子及び＜０１１＞分極を提供し、室温２０℃で５００ｐｍ／Ｖよりも大きい横有効Ｅ−Ｏ係数γT C及び８７．５Ｖ（ｌ／ｄ＝１）よりも小さい半波長電圧ＶT πを与えるための手段を含む横モード電気光学結晶素子を備える電気光学システムが提供される。 In accordance with another aspect of the present invention, a system that is one of an amplitude modulator and a phase modulator provides a transverse mode electro-optic crystal element manufactured by a method according to Formula I or Formula II and <011> polarization , Transverse mode electro-optic including means for providing a transverse effective EO coefficient γ T C greater than 500 pm / V at room temperature 20 ° C. and a half-wave voltage V T π less than 87.5 V (l / d = 1) An electro-optic system comprising a crystal element is provided.
本発明の別の態様にしたがって、振幅変調器及び位相変調器の一つであるシステムは式IIIに従う方法によって製造される横モード電気光学結晶素子及び＜０１１＞分極を提供し、室温２０℃で５００ｐｍ／Ｖよりも大きい横有効Ｅ−Ｏ係数γT C及び１２Ｖ（ｌ／ｄ＝７）よりも小さい半波電圧ＶT πを与えるための手段を含む横モード電気光学結晶素子を備える電気光学システムが提供される。 In accordance with another aspect of the present invention, a system that is one of an amplitude modulator and a phase modulator provides a transverse mode electro-optic crystal element manufactured by a method according to Formula III and <011> polarization at room temperature of 20 ° C. Electro-optic comprising a transverse mode electro-optic crystal element including a transverse effective EO coefficient γ T C greater than 500 pm / V and means for providing a half wave voltage V T π less than 12 V (l / d = 7) A system is provided.
強誘電体Ｅ−Ｏ単結晶材料は、ＰＭＮ−ＰＴ（マグネシウムニオブ酸鉛−チタン酸鉛）若しくはＰＩＮ−ＰＭＮ−ＰＴ（インジウムニオブ酸鉛−マグネシウムニオブ酸鉛−チタン酸鉛）又はＰＺＮ−ＰＴ（亜鉛ニオブ酸鉛−チタン酸鉛）若しくは上記のドープ結晶であっても良い。特に、発明は、上に述べた、再極化可能設計＜０１１＞極化（立方表記）強誘電体結晶に関する。０．４１μｍから透明である分極化結晶の光透過は、ＩＲ領域、すくなくとも５μｍまで、任意の顕著な吸収帯も無く連続している。Ｅ−Ｏ結晶は、超高有効で明確な電気光学係数γC/γ＊ C及び非常に低い８７Ｖ未満の半波電圧を与える。この＜０１１＞再分極化可能特性は、使用の信頼性と便利さに関して実際の応用にとって戦略的に重要である。再分極化可能構造の別の長所は、Ｅ−Ｏ結晶素子の製作コストが低いことである。＜０１１＞極化Ｅ−Ｏ結晶素子は、（１）（操作温度−３０℃〜１１０℃で）３５０〜１１００ｐｍ／Ｖの範囲と同じ高さで有効横直線Ｅ−Ｏ係数γT C及び８５Ｖ（ｌ／ｄ＝１）未満と１２Ｖ（ｌ／ｄ＝７）未満の非常に低い半波長電圧ＶT πを示し、（２）３１５Ｖ未満の非常に低い半波長電圧Ｖl πをもち（操作温度−３０℃〜１１０℃で）２８０〜８００ｐｍ／Ｖの範囲と同じ高さで有効縦直線Ｅ−Ｏ係数γl Cを示すことを発見した。再ポーリング能の性質に加えて、超高有効Ｅ−Ｏ係数γC及び非常に低いＶπによって、発明結晶素子が、新世代のＥ−Ｏ結晶素子として各種のＥ−Ｏ装置に使用可能である。特に、Ｅ−Ｏ切り替え、Ｅ−Ｏ位相変調、Ｅ−Ｏ振幅変調、レーザー光変調、同調フィルター及び光複屈折装置に利用可能である。 Ferroelectric EO single crystal materials are PMN-PT (lead magnesium niobate-lead titanate) or PIN-PMN-PT (lead indium niobate-lead magnesium niobate-lead titanate) or PZN-PT ( Zinc niobate-lead titanate) or the above doped crystal may be used. In particular, the invention relates to the repolarizable design <011> poled (cubic notation) ferroelectric crystal described above. The light transmission of the polarized crystal, which is transparent from 0.41 μm, is continuous without any significant absorption band up to the IR region, at least 5 μm. E-O crystals, gives the ultra-high effective and clear electrooptic coefficient γ C / γ * C and very low half-wave voltage of less than 87V. This <011> repolarizable property is strategically important for practical applications in terms of reliability and convenience of use. Another advantage of the repolarizable structure is the low manufacturing cost of the EO crystal element. <011> Polarized EO crystal element has (1) (at an operating temperature of −30 ° C. to 110 ° C.) an effective horizontal straight EO coefficient γ T C and 85 V at the same height as the range of 350 to 1100 pm / V. (l / d = 1) and less than 12V (l / d = 7) of less than very low showed a half-wave voltage V T π, (2) very low has a half-wave voltage V l [pi (operation below 315V It has been found that the effective vertical EO coefficient γ l C is shown at the same height as the range of 280-800 pm / V (at temperatures of −30 ° C. to 110 ° C.). In addition to the nature of re-polling capability, the ultra-high effective EO coefficient γ C and very low V π allow the inventive crystal element to be used in various EO devices as a new generation EO crystal element. is there. In particular, it can be used for EO switching, EO phase modulation, EO amplitude modulation, laser light modulation, tuning filter, and optical birefringence device.
実験サンプル２
以下の組成を持つ縦モードＥ−Ｏ結晶素子：６７．５％ＰＭＮ−３２．５％ＰＴ単結晶素子。カット方向、ポーリング方向及び入射光の構造並びに結晶方向は図２Ｂに示す。試験の結果は以下の通り、３００Ｖ未満の非常に低い半波電圧Ｖl πを具備する２０℃で４５０ｐｍ／Ｖの高さの有効縦直線Ｅ−Ｏ係数γl Cである。
Experimental sample 2
Longitudinal mode EO crystal element having the following composition: 67.5% PMN-32.5% PT single crystal element. The cut direction, poling direction, incident light structure and crystal direction are shown in FIG. 2B. The result of the test is an effective longitudinal straight line EO coefficient γ 1 C as high as 450 pm / V at 20 ° C. with a very low half-wave voltage V 1 π of less than 300 V as follows.
実験サンプル３
以下の組成を持つ縦モードＥ−Ｏ結晶素子：２４％ＰＩＮ５２．４％ＰＭＮ−２３．６％ＰＴ単結晶素子。カット方向、ポーリング方向及び入射光の構造並びに結晶方向は図３に示す。試験結果は以下の通り、３１５Ｖ未満の非常に低い半波電圧Ｖl πを具備する２０℃で５００ｐｍ／Ｖの高さの有効縦直線Ｅ−Ｏ係数γl Cである。
Experimental sample 3
Longitudinal mode EO crystal element having the following composition: 24% PIN 52.4% PMN-23.6% PT single crystal element. Structure and crystal direction of the cutting direction, the poling direction and the incident light is shown in FIG. The test results are as follows: an effective vertical straight line EO coefficient γ l C with a height of 500 pm / V at 20 ° C. with a very low half-wave voltage V l π less than 315 V.
実験サンプル４
以下の組成を持つ横モードＥ−Ｏ結晶素子：２４％ＰＩＮ５２．４％ＰＭＮ−２３．６％ＰＴ単結晶素子。カット方向、ポーリング方向及び入射光の構造並びに結晶方向は図４に示す。試験結果は以下の通り、９５Ｖ未満の非常に低い半波電圧ＶT πを具備する２０℃で５２７ｐｍ／Ｖよりも大きい有効横直線Ｅ−Ｏ係数γT Cである。
Experimental sample 4
Transverse mode EO crystal element having the following composition: 24% PIN 52.4% PMN-23.6% PT single crystal element. Structure and crystal direction of the cutting direction, the poling direction and the incident light is shown in FIG. The test result is an effective horizontal straight EO coefficient γ T C greater than 527 pm / V at 20 ° C. with a very low half-wave voltage V T π less than 95 V as follows.
さて、図５Ａを具体的に参照して、横モード結晶を備えた電気光学システムは、例えば、示されるように、コミュニケーションシステム中に、無反射終端を有し、同様に示されるように変調シグナル源に動作可能にリンクした電気光学結晶間隔伝送線を含んでも良い。追加的に含まれるのは、偏光特性（ここでは４分の１波長板）及び出力偏光板である。その他の支持構造物は、提案発明を研究する各技術分野の当業者によって理解されるものである。結果として、本発明は、電気光学システム、例えば、光学イメージングシステム、レーザーシステム、コミュニケーションシステム又は、提案開示を研究している当業者によって理解されるであろうその他のものを提供する。 Now referring specifically to FIG. 5A, an electro-optic system with a transverse mode crystal has, for example, a non-reflective termination in the communication system, as shown, and a modulated signal as shown as well. An electro-optic crystal spacing transmission line operably linked to the source may be included. Additional included are polarization properties (here a quarter wave plate) and an output polarizer. Other support structures will be understood by those skilled in the art of studying the proposed invention. As a result, the present invention provides electro-optic systems, such as optical imaging systems, laser systems, communication systems, or others that will be understood by those skilled in the art of studying the proposed disclosure.
Claims (18)
（Ｉ） Pb(Mg1/3Nb2/3)1-xTixO3 ここでxは０．２２〜０．３８として定義、
若しくは
（ＩＩ） Pb(Zn1/3Nb2/3)1-yTiyO3 ここでyは０．０４〜０．１１として定義され、
（０１１）に前記結晶素子をスライスする工程と、
９５℃未満の温度範囲で、抗電場（Ｅｃ）の２倍の下で、＜０１１＞方向に前記結晶素子をポーリングすることによってｍｍ２対称構造で分極化する工程と、
横モード結晶素子を提供する工程とを含み、及び
前記横モード結晶素子が、＜０１１＞分極を提供し、室温２０℃で５２７ｐｍ／Ｖより大きな横有効Ｅ−Ｏ係数γT c及び８７．５Ｖ（ｌ／ｄ＝１）よりも低い半波電圧ＶT πを与えることを特徴とするＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 Producing a crystal element having a chemical composition represented by one of the following chemical formulas:
(I) Pb (Mg 1/3 Nb 2/3 ) 1-x Ti x O 3 where x is defined as 0.22 to 0.38,
Or (II) Pb (Zn 1/3 Nb 2/3) 1-y Ti y O 3 where y is defined as 0.04 to 0.11,
( 011) slicing the crystal element;
At a temperature range of less than 95 ° C., under 2 times the anti-electric field (Ec), a step of poling in mm2 symmetric structure by polling the crystal element in the <011> direction,
Providing a transverse mode crystal element, and wherein the transverse mode crystal element provides <011> polarization and has a transverse effective EO coefficient γ T c greater than 527 pm / V at room temperature 20 ° C. and 87.5 V A method of manufacturing an electro-optic crystal element for use in an EO crystal device, wherein a half-wave voltage V T π lower than (l / d = 1) is applied.
前記結晶素子の研磨と光学的仕上げを行う工程とを含むことを特徴とする請求項１または２に記載のＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 A step of dicing the created crystal element;
The method for producing an electro-optic crystal element for use in an EO crystal device according to claim 1 or 2 , further comprising the steps of polishing and optically finishing the crystal element.
（Ｉ） Pb(Mg1/3Nb2/3)1-xTixO3 ここでxは０．２２〜０．３８として定義、
若しくは
（ＩＩ） Pb(Zn1/3Nb2/3)1-yTiyO3 ここでyは０．０４〜０．１１として定義され、
（０１１）に前記結晶素子をスライスする工程と、
９５℃未満の温度範囲で、抗電場（Ｅｃ）の２倍の下で、＜０１１＞方向に前記結晶素子をポーリングすることによってｍｍ２対称構造で分極化する工程と、
縦モード結晶素子を提供する工程と、
前記縦モード結晶素子上に透明電極をコーティングする工程とを含み、及び
前記縦モード結晶素子が、室温２０℃で４２７ｐｍ／Ｖより大きな縦有効Ｅ−Ｏ係数γ ｌ c 及び３００Ｖよりも低い半波電圧Ｖ l π の＜０１１＞分極を提供することを特徴とするＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 Producing a crystal element having a chemical composition represented by one of the following chemical formulas:
(I) Pb (Mg 1/3 Nb 2/3 ) 1-x Ti x O 3 where x is defined as 0.22 to 0.38,
Or
(II) Pb (Zn 1/3 Nb 2/3 ) 1-y Ti y O 3 where y is defined as 0.04-0.11 ,
( 011) slicing the crystal element;
At a temperature range of less than 95 ° C., under 2 times the anti-electric field (Ec), a step of poling in mm2 symmetric structure by polling the crystal element in the <011> direction,
Providing a longitudinal mode crystal element;
Coating a transparent electrode on the longitudinal mode crystal element, and the longitudinal mode crystal element has a longitudinal effective EO coefficient γ l c greater than 427 pm / V at room temperature of 20 ° C. and a half wave lower than 300 V A method of manufacturing an electro-optic crystal element for use in an EO crystal device, characterized by providing <011> polarization of voltage V l π .
前記結晶素子の研磨と光学的仕上げを行う工程とを含むことを特徴とする請求項６または７に記載のＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 A step of dicing the created crystal element;
The method for producing an electro-optic crystal element for use in an EO crystal apparatus according to claim 6 or 7 , further comprising the steps of polishing and optically finishing the crystal element.
（ＩＩＩ） y*[Pb(In1/2Nb1/2)O3]-(1-y)*[Pb(Mg1/3Nb2/3)1-xTixO3]
ここでｘは、０．０〜０．３５として定義、
ｙは０．０〜０．３５として定義され、
（０１１）に前記結晶素子をスライスする工程と、
９５℃未満の温度範囲で、抗電場（Ｅｃ）の２倍の下で、＜０１１＞方向に前記結晶素子をポーリングすることによってｍｍ２対称構造で分極化する工程と、
横モード結晶素子を提供する工程とを含み、及び
前記横モード結晶素子が、＜０１１＞分極を提供し、室温２０℃で５００ｐｍ／Ｖより大きな横有効Ｅ−Ｏ係数γT c及び１２Ｖ(ｌ／ｄ＝７)よりも低い半波電圧ＶT πを与えることを特徴とするＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 Producing a crystal element having a chemical composition represented by one of the following chemical formulas:
(III) y * [Pb (In 1/2 Nb 1/2 ) O 3 ]-(1-y) * [Pb (Mg 1/3 Nb 2/3 ) 1-x Ti x O 3 ]
Where x is defined as 0.0 to 0.35,
y is defined as 0.0-0.35,
(011) slicing the crystal element;
At a temperature range of less than 95 ° C., under 2 times the anti-electric field (Ec), a step of poling in mm2 symmetric structure by polling the crystal element in the <011> direction,
Providing a transverse mode crystal element, and wherein the transverse mode crystal element provides <011> polarization and has a transverse effective EO coefficient γ T c of greater than 500 pm / V at room temperature of 20 ° C. and 12 V (l / D = 7) A method for producing an electro-optic crystal element for use in an EO crystal device, wherein a half-wave voltage V T π is applied.
前記結晶素子の研磨と光学的仕上げを行う工程とを含むことを特徴とする請求項１１に記載のＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 A step of dicing the created crystal element;
12. The method of manufacturing an electro-optic crystal element for use in an EO crystal device according to claim 11 , comprising the steps of polishing and optically finishing the crystal element.
（ＩＩＩ） y*[Pb(In1/2Nb1/2)O3]-(1-y)*[Pb(Mg1/3Nb2/3)1-xTixO3]
ここでｘは、０．０〜０．３５として定義、
ｙは０．０〜０．３５として定義され、
（０１１）に前記結晶素子をスライスする工程と、
９５℃未満の温度範囲で、抗電場（Ｅｃ）の２倍の下で、＜０１１＞方向に前記結晶素子をポーリングすることによってｍｍ２対称構造で分極化する工程と、
縦モード結晶素子を提供する工程と、
前記縦モード結晶素子上に透明電極をコーティングする工程とを含み、及び
前記縦モード結晶素子が、室温２０℃で４２７ｐｍ／Ｖより大きな縦有効Ｅ−Ｏ係数γ ｌ c 及び３００Ｖよりも低い半波電圧Ｖ l π の＜０１１＞分極を提供することを特徴とするＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 Producing a crystal element having a chemical composition represented by one of the following chemical formulas:
(III) y * [Pb (In 1/2 Nb 1/2 ) O 3 ]-(1-y) * [Pb (Mg 1/3 Nb 2/3 ) 1-x Ti x O 3 ]
Where x is defined as 0.0 to 0.35,
y is defined as 0.0-0.35,
(011) slicing the crystal element;
At a temperature range of less than 95 ° C., under 2 times the anti-electric field (Ec), a step of poling in mm2 symmetric structure by polling the crystal element in the <011> direction,
Providing a longitudinal mode crystal element;
Coating a transparent electrode on the longitudinal mode crystal element, and the longitudinal mode crystal element has a longitudinal effective EO coefficient γ l c greater than 427 pm / V at room temperature 20 ° C. and a half lower than 300 V A method for producing an electro-optic crystal element for use in an EO crystal device, characterized by providing <011> polarization of a wave voltage V l π .
前記結晶素子を研磨し、光学的仕上げを行う工程と、それによって前記電気光学結晶素子を形成する工程とを含むことを特徴とする請求項１５に記載のＥ−Ｏ結晶装置に用いるための電気光学結晶素子を製造する方法。 A step of dicing the created crystal element;
16. The electricity for use in an EO crystal device according to claim 15 , comprising the steps of polishing and crystallizing the crystal element and thereby forming the electro-optic crystal element. A method for producing an optical crystal element.
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| JP2011215260A (en) * | 2010-03-31 | 2011-10-27 | Tdk Corp | Optical element and variable optical module |
| WO2012051464A2 (en) * | 2010-10-13 | 2012-04-19 | H.C. Materials Corporation | High frequency piezoelectric crystal composites, devices, and method for manufacturing the same |
| CN105308496A (en) * | 2012-04-04 | 2016-02-03 | P·韩 | Electro-optical single crystal element, method for the preparation thereof, and systems employing the same |
-
2013
- 2013-04-04 JP JP2015504738A patent/JP6420234B2/en not_active Expired - Fee Related
-
2016
- 2016-12-27 JP JP2016253907A patent/JP2017097368A/en active Pending
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